Electric Field Driven Dual-Functional Molecular Switches in Tunnel Junctions
<|begin_of_text|><|start_header_id|>system<|end_header_id|> You are a research archivist expert in dataset metadata. Answer the question truthfully.  <|eot_id|><|start_header_id|>user<|end_header_id|> Here is the Description of a dataset. Description:'To avoid cross-talk and suppress leakage currents in resistive random access memories (RRAM), a resistive switch and a current rectifier (diode) are usually combined in series in a one diode—one resistor (1D-1R) RRAM. However, this complicates the design of next-generation RRAM, increases the footprint of devices, and increases the operating voltage as the potential drops over two consecutive junctions. Here we report a molecular tunnel junction based on molecules that provide an unprecedented dual functionality of diode and variable resistor resulting in molecular-scale 1D-1R RRAM with current rectification ratio = 2.5×104 and resistive on/off ratio = 6.7×103, and a low drive voltage of 0.89 V. The switching relies on dimerization of redox units, resulting in hybridization of molecular orbitals accompanied by directional ion migration.' . Please return only a json list of at most 3 Keywords corresponding to the Description:.<|eot_id|><|start_header_id|>assistant<|end_header_id|> {"Answer" : ["molecular tunnel juntions, molecular switches, molecular diodes, EGaIn"]} <|eot_id|>
 Here is the Description of a dataset. Description:'To avoid cross-talk and suppress leakage currents in resistive random access memories (RRAM), a resistive switch and a current rectifier (diode) are usually combined in series in a one diode—one resistor (1D-1R) RRAM. However, this complicates the design of next-generation RRAM, increases the footprint of devices, and increases the operating voltage as the potential drops over two consecutive junctions. Here we report a molecular tunnel junction based on molecules that provide an unprecedented dual functionality of diode and variable resistor resulting in molecular-scale 1D-1R RRAM with current rectification ratio = 2.5×104 and resistive on/off ratio = 6.7×103, and a low drive voltage of 0.89 V. The switching relies on dimerization of redox units, resulting in hybridization of molecular orbitals accompanied by directional ion migration.' . Please return only a json list of at most 3 Keywords corresponding to the Description:.
To avoid cross-talk and suppress leakage currents in resistive random access memories (RRAM), a resistive switch and a current rectifier (diode) are usually combined in series in a one diode—one resistor (1D-1R) RRAM. However, this complicates the design of next-generation RRAM, increases the footprint of devices, and increases the operating voltage as the potential drops over two consecutive junctions. Here we report a molecular tunnel junction based on molecules that provide an unprecedented dual functionality of diode and variable resistor resulting in molecular-scale 1D-1R RRAM with current rectification ratio = 2.5×104 and resistive on/off ratio = 6.7×103, and a low drive voltage of 0.89 V. The switching relies on dimerization of redox units, resulting in hybridization of molecular orbitals accompanied by directional ion migration.
molecular tunnel juntions, molecular switches, molecular diodes, EGaIn