Question: I'm designing a solid state battery disconnect switch and I want to improve the mosfets' turn-on immunity (high dV/dt on Vds) without impacting the turn-off time. I don't really care about the turn-on time, it can be 100x slower than turn-off time, no problem.

I came up with this solution:

[![enter image description here](https://i.stack.imgur.com/pCPJI.png)](https://i.stack.imgur.com/pCPJI.png)

C1 obviously improves the immunity and D1 should leave the turn-off time the same. Did I miss something? is there a better way to do this?

NB: mosfet's datasheet is available [here](https://www.onsemi.com/pub/Collateral/FDBL86361_F085-D.PDF) and the driver's datasheet is [here](https://www.mouser.fr/datasheet/2/196/Infineon-1EDI60N12AF-DS-v02_00-EN-1226228.pdf). I'll use a +/- 12 V symmetric supply and the driver will drive 10 mosfets in parallel.

Answer: 
I used the solution I gave in the question with:

C1 = 100 nF (min 90.7 nF calculated with Crss = 1.7 nF, Vds = 64 V and Vgsth = 1.2 V)  

R1 = 47 k (value not critical, BoM reuse)  

D1 = STPS1L30

Also be warned the inductive voltage spike at turn-off is actually a significant problem contrary to what I thought, you must do something about it if your application is similar to mine. NB: TVS/zener diodes aren't good enough if your working voltage is 64 V and the mosfets have a Vdss of only 80 V.
Why not simply increase the switch-on resistance by adding R3?

![schematic](https://i.stack.imgur.com/5jJel.png)

[simulate this circuit](/plugins/schematics?image=http%3a%2f%2fi.stack.imgur.com%2f5jJel.png) – Schematic created using [CircuitLab](https://www.circuitlab.com/)