Strain-Balanced Low-Temperature-Grown Beryllium-Doped InGaAs/InAlAs Superlattices for High-Performance Terahertz Photoconductors under 1550 nm Laser Excitation

This study systematically investigates the photoconductive properties of low-temperature-grown Beryllium (Be)-doped InGaAs/InAlAs strain-balanced superlattices (SLs) grown by molecular beam epitaxy under stationary growth conditions on semi-insulating InP:Fe substrates. The stationary growth approach enabled precise control over lateral gradients in layer strain, composition, and thickness across a single wafer, while strain-balancing facilitated pseudomorphic growth to explore a wide range of structural parameters, providing a robust platform to study their influence on photoconductive performance. Structural characterization confirmed high crystalline quality and smooth surface morphology in all samples. Time-resolved pump-probe spectroscopy revealed subpicosecond carrier lifetimes, validating the effectiveness of strain balancing and Be doping in tuning ultrafast recombination dynamics. Hall effect measurements supported by 8-band k.p modeling revealed enhanced carrier mobility in strain-balanced SLs compared to lattice-matched structures, primarily due to reduced electron and hole effective masses and stronger quantum confinement. Additionally, optical absorption under 1550 nm excitation showed improved absorption coefficients for the strain-balanced structure, consistent with the reduction in bandgap energy predicted by theoretical modeling, thereby enhancing photon-to-carrier conversion efficiency. Furthermore, transmission electron microscopy provided first-time evidence of significant Be-induced interdiffusion at the strained SL interfaces, an important factor influencing carrier transport and dynamics. These findings position low-temperature-grown Be-doped InGaAs/InAlAs strain-balanced SLs as promising materials for high-performance broadband THz photoconductive detectors operating at telecom-compatible wavelengths.