Indian Institute of Science
Education•Bengaluru, India•
About: Indian Institute of Science is a(n) education organization based out in Bengaluru, India. It is known for research contribution in the topic(s): Population & Thin film. The organization has 30960 authors who have published 62497 publication(s) receiving 1257765 citation(s). The organization is also known as: IISC & IISc.
Topics: Population, Thin film, Raman spectroscopy, Dielectric, Finite element method ...read more
Data clustering: a review
Anil K. Jain1, M. N. Murty2, Patrick J. Flynn3• Institutions (3)
Michigan State University1, Indian Institute of Science2, Ohio State University3
01 Sep 1999-ACM Computing Surveys
TL;DR: An overview of pattern clustering methods from a statistical pattern recognition perspective is presented, with a goal of providing useful advice and references to fundamental concepts accessible to the broad community of clustering practitioners.
Abstract: Clustering is the unsupervised classification of patterns (observations, data items, or feature vectors) into groups (clusters). The clustering problem has been addressed in many contexts and by researchers in many disciplines; this reflects its broad appeal and usefulness as one of the steps in exploratory data analysis. However, clustering is a difficult problem combinatorially, and differences in assumptions and contexts in different communities has made the transfer of useful generic concepts and methodologies slow to occur. This paper presents an overview of pattern clustering methods from a statistical pattern recognition perspective, with a goal of providing useful advice and references to fundamental concepts accessible to the broad community of clustering practitioners. We present a taxonomy of clustering techniques, and identify cross-cutting themes and recent advances. We also describe some important applications of clustering algorithms such as image segmentation, object recognition, and information retrieval.
A Dipole Mode in the Tropical Indian Ocean
N. H. Saji, Bhupendra Nath Goswami1, P. N. Vinayachandran, Toshio Yamagata2• Institutions (2)
Indian Institute of Science1, University of Tokyo2
23 Sep 1999-Nature
TL;DR: An analysis of observational data over the past 40 years shows a dipole mode in the Indian Ocean: a pattern of internal variability with anomalously low sea surface temperatures off Sumatra and high seasurface temperatures in the western Indian Ocean, with accompanying wind and precipitation anomalies.
Abstract: For the tropical Pacific and Atlantic oceans, internal modes of variability that lead to climatic oscillations have been recognized1,2, but in the Indian Ocean region a similar ocean–atmosphere interaction causing interannual climate variability has not yet been found3. Here we report an analysis of observational data over the past 40 years, showing a dipole mode in the Indian Ocean: a pattern of internal variability with anomalously low sea surface temperatures off Sumatra and high sea surface temperatures in the western Indian Ocean, with accompanying wind and precipitation anomalies. The spatio-temporal links between sea surface temperatures and winds reveal a strong coupling through the precipitation field and ocean dynamics. This air–sea interaction process is unique and inherent in the Indian Ocean, and is shown to be independent of the El Nino/Southern Oscillation. The discovery of this dipole mode that accounts for about 12% of the sea surface temperature variability in the Indian Ocean—and, in its active years, also causes severe rainfall in eastern Africa and droughts in Indonesia—brightens the prospects for a long-term forecast of rainfall anomalies in the affected countries.
Graphene: The New Two-Dimensional Nanomaterial
C. N. R. Rao1, A. K. Sood2, Kota S. Subrahmanyam1, A. Govindaraj1• Institutions (2)
Jawaharlal Nehru Centre for Advanced Scientific Research1, Indian Institute of Science2
05 Oct 2009-Angewandte Chemie
TL;DR: The status of graphene research is presented, which includes aspects related to synthesis, characterization, structure, and properties.
Abstract: Every few years, a new material with unique properties emerges and fascinates the scientific community, typical recent examples being high-temperature superconductors and carbon nanotubes. Graphene is the latest sensation with unusual properties, such as half-integer quantum Hall effect and ballistic electron transport. This two-dimensional material which is the parent of all graphitic carbon forms is strictly expected to comprise a single layer, but there is considerable interest in investigating two-layer and few-layer graphenes as well. Synthesis and characterization of graphenes pose challenges, but there has been considerable progress in the last year or so. Herein, we present the status of graphene research which includes aspects related to synthesis, characterization, structure, and properties.
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
Anindya Das1, Simone Pisana2, Biswanath Chakraborty1, S. Piscanec2, Srijan Kumar Saha1, Umesh V. Waghmare3, Kostya S. Novoselov4, H. R. Krishnamurthy1, Andre K. Geim4, Andrea C. Ferrari2, A. K. Sood1 - Show less +7 more • Institutions (4)
Indian Institute of Science1, University of Cambridge2, Jawaharlal Nehru Centre for Advanced Scientific Research3, University of Manchester4
01 Apr 2008-Nature Nanotechnology
TL;DR: This work demonstrates a top-gated graphene transistor that is able to reach doping levels of up to 5x1013 cm-2, which is much higher than those previously reported.
Abstract: The recent discovery of graphene has led to many advances in two-dimensional physics and devices. The graphene devices fabricated so far have relied on $SiO_2$ back gating. Electrochemical top gating is widely used for polymer transistors, and has also been successfully applied to carbon nanotubes. Here we demonstrate a top-gated graphene transistor that is able to reach doping levels of up to $5\times 10^{13} cm^{-2}$, which is much higher than those previously reported. Such high doping levels are possible because the nanometre-thick Debye layer in the solid polymer electrolyte gate provides a much higher gate capacitance than the commonly used $SiO_2$ back gate, which is usually about 300 nm thick. In situ Raman measurements monitor the doping. The G peak stiffens and sharpens for both electron and hole doping, but the 2D peak shows a different response to holes and electrons. The ratio of the intensities of the G and 2D peaks shows a strong dependence on doping, making it a sensitive parameter to monitor the doping.
Alan J. Heeger 171 913 147492
William A. Goddard 151 1653 123322
Rajesh Kumar 149 4439 140830
Kaushik De 139 1625 102058
Tariq Aziz 138 1646 96586
Jean-Marie Tarascon 136 853 137673
Kajari Mazumdar 134 1295 94253
C. N. R. Rao 133 1646 86718
Gobinda Majumder 133 1523 87732
Ramesh Narayan 129 661 63628
Seema Sharma 129 1565 85446
Jyothsna Rani Komaragiri 129 1097 82258
Alex K.-Y. Jen 128 921 61811
Sushil Chauhan 128 1129 78835
Somnath Choudhury 128 1264 80929
École Polytechnique Fédérale de Lausanne
268K papers, 18.2M citations