ITO/ZnO/polymer:ITIC(1:1, w/w)/MoO3/Ag device structure, measured under AM 1.5G illumination (100 mW cm-2) Wt. ratio Annealing FF PCE Voc Jsc Donor (D:A) Temp. (V) (mA cm-2) (%) (%) RT 0.79 12.7 52.5 5.32 1 : 1 100 oC 0.81 12.6 55.3 5.65 120 oC 0.76 12.5 55.6 5.28 Ran-TT ITIC 1 : 2 0.81 5.67 55.8 2.57 1 : 1.5 0.81 6.34 53.9 3.02 100 oC 1 : 1 0.81 12.6 55.3 5.65 1.5 : 1 0.82 7.49 50.5 3.10 Fig. S5. characteristics of PSCs based on Ran-TT:ITIC as-cast films prepared with different J-V solvents. Table S3. Photovoltaic properties of PSCs fabricated with the use of an additive with ITO/ZnO/polymer:ITIC (1:1, w/w)/MoO3/Ag device structure, measured under AM 1.5G illumination (100 mW cm-2) FF PCE Voc Jsc Donor Acceptor solvent (V) (mA cm-2) (%) (%) CB + CN 1% (v/v) 0.82 6.13 55.3 2.72 Ran-TT ITIC CB 0.79 11.2 54.2 4.89 CB : CF = 1 : 4 0.82 9.63 57.8 4.57
ITO/ZnO/polymer:ITIC(1:1, w/w)/MoO3/Ag device structure, measured under AM 1.5G illumination (100 mW cm-2) Donor Wt. ratio (D:A) Annealing Temp. Voc (V) Jsc (mA cm-2) FF (%) PCE (%) Ran-TT ITIC 1 : 1 RT 0.79 12.7 52.5 5.32 100 oC 0.81 12.6 55.3 5.65 120 oC 0.76 12.5 55.6 5.28 1 : 2 100 oC 0.81 5.67 55.8 2.57 1 : 1.5 0.81 6.34 53.9 3.02 1 : 1 0.81 12.6 55.3 5.65 1.5 : 1 0.82 7.49 50.5 3.10 Fig. S5. J-V characteristics of PSCs based on Ran-TT:ITIC as-cast films prepared with different solvents. Table S3. Photovoltaic properties of PSCs fabricated with the use of an additive with ITO/ZnO/polymer:ITIC (1:1, w/w)/MoO3/Ag device structure, measured under AM 1.5G illumination (100 mW cm-2) Donor Acceptor solvent Voc (V) Jsc (mA cm-2) FF (%) PCE (%) Ran-TT ITIC CB + CN 1% (v/v) 0.82 6.13 55.3 2.72 CB 0.79 11.2 54.2 4.89 CB : CF = 1 : 4 0.82 9.63 57.8 4.57
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