Figure S6. Worm-like movement of photothermal PP0.29PD70 (25 mm in length, 3 mm in width) under NIR laser irradiation (Io = 253 mW). Figure S7. plot for displacement (filled symbols) and bending (angles in open symbols) properties comparing different PEDOT based soft actuators. Figure S8. Photothothermal movement of sunflower-B under one sun condition (AM1.5, 100 mW cm−2) at room temperature. Table S1. The electrical conductivity and sheet resistance of bimorph with different PEDOT thickness. Sheet resistance Electrical conductivity Thickness of (Ω) (S/cm) Δσave PEDOT (%) (nm) On On On On Si wafer PDMSa Si PDMS 129 102 103.5 760 749 1.4 148 95.6 96 705 702 0.3 232 44 42.7 981 1011.7 3.1 257 47.3 50.3 823 774 6 370 28.6 29 943 932 1.1 380 29 26.3 907 999 10.1 Thickness of PDMS = 300 a μm Table S2. Displacement and bending properties of PP-PEDOT/PDMS bimorphs as compared
Figure S6. Worm-like movement of photothermal PP0.29PD70 (25 mm in length, 3 mm in width) under NIR laser irradiation (Io = 253 mW). Figure S7. plot for displacement (filled symbols) and bending (angles in open symbols) properties comparing different PEDOT based soft actuators. Figure S8. Photothothermal movement of sunflower-B under one sun condition (AM1.5, 100 mW cm−2) at room temperature. Table S1. The electrical conductivity and sheet resistance of bimorph with different thickness. Thickness of (nm) Sheet resistance (Ω) Electrical conductivity (S/cm) Δσave (%) On Si wafer On PDMSa On Si On PDMS 129 102 103.5 760 749 1.4 148 95.6 96 705 702 0.3 232 44 42.7 981 1011.7 3.1 257 47.3 50.3 823 774 6 370 28.6 29 943 932 1.1 380 29 26.3 907 999 10.1 a Thickness of PDMS = 300 μm Table S2. Displacement and bending properties of PP-PEDOT/PDMS bimorphs as compared PEDOT PEDOT
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