2010 Devices and David A. Bell, PHI, 4th Edition, 2004 “Electronic Circuits”, Electronics Circuits: A “Analog Simplified Approach”, U.B. Mahadevaswamy, Pearson/Saguine, 2007. Course Outcome (COs) At the end of the course, students will be able to Bloom’s Level 1 the operation and applications of basic solid state devices namely Diodes L2 Explain and transistors. 2 Explain and analyse the different models of BJT and frequency response analysis. L2,L4 3 Explain and analyse various types of BJT amplifiers, their operating L2 characteristics, frequency response and performance analysis. 4 Explain operation and characteristics of different types of Oscillators. L2 5 Explain operation and characteristics of special purpose solid state devices namely L2 optoelectric diodes and transistors, Schottky diodes, Varactor, Varistors, Tunnel diode, PIN diode. 6 Explain construction, operation and characteristics of Field effect transistors and L2 basic concepts of different types of FETs namely DMOS,EMOS,CMOS, Power FET. PO No Program Outcomes(POs) of the course: 1. Graduates will demonstrate the ability to identify, formulate and solve electrical and PO2 electronics engineering problems and also will be aware of contemporary issues. 2. Graduate who can participate and succeed in competitive examinations PO11 Self Study topics shall be evaluated during CIE (Assignments and IA tests) and 10% weightage shall be given in SEE question paper. Scheme of Continuous Internal Evaluation (CIE): Average of best two Average of two Quiz/Seminar/ Class Total Components tests out of three assignments Project participation Marks Maximum 25 10 05 10 50 Marks Scheme of Semester End Examination (SEE):
2010 “Electronic Devices and Circuits”, David A. Bell, PHI, 4th Edition, 2004 “Analog Electronics Circuits: A Simplified Approach”, U.B. Mahadevaswamy, Pearson/Saguine, 2007. Course Outcome (COs) At the end of the course, students will be able to Bloom’s Level 1 Explain the operation and applications of basic solid state devices namely Diodes and transistors. L2 2 Explain and analyse the different models of BJT and frequency response analysis. L2,L4 3 Explain and analyse various types of BJT amplifiers, their operating characteristics, frequency response and performance analysis. L2 4 Explain operation and characteristics of different types of Oscillators. L2 5 Explain operation and characteristics of special purpose solid state devices namely optoelectric diodes and transistors, Schottky diodes, Varactor, Varistors, Tunnel diode, PIN diode. L2 6 Explain construction, operation and characteristics of Field effect transistors and basic concepts of different types of FETs namely DMOS,EMOS,CMOS, Power FET. L2 Program Outcomes(POs) of the course: PO No 1. Graduates will demonstrate the ability to identify, formulate and solve electrical and electronics engineering problems and also will be aware of contemporary issues. PO2 2. Graduate who can participate and succeed in competitive examinations PO11 Self Study topics shall be evaluated during CIE (Assignments and IA tests) and 10% weightage shall be given in SEE question paper. Scheme of Continuous Internal Evaluation (CIE): Components Average of best two tests out of three Average of two assignments Quiz/Seminar/ Project Class participation Total Marks Maximum Marks 25 10 05 10 50 Scheme of Semester End Examination (SEE):
3-sem-syllabus_25_07_17.docx