The reference points are the full circles, squares and the hexagon. Schematic Drawing of the Metrics and the Reference Points of a Pseudo-Square Wafer. Schematic Drawing Outlining the Relations between Fi,j, Hi, i and i,j. MEASUREMENT SYSTEM ANALYSIS (MSA) NOTICE: This related information is not an official part of SEMI draft doc. 5434 and was derived from the global PV Materials Committee. This related information was approved for publication by full letter ballot on (date of approval). Purpose The MSA was performed for establishing the capability of the test method for usage in large volume Si wafer manufacturing. The measurements were performed on standard production equipment. Parameter Settings Parameter was set to 1/4 of nominal side length. V The measured values are reported in micrometer units and degrees as provided by the measurement equipment used. Results of MSA 5 single crystalline and 5 multicrystalline Si wafers with nominal size of 156 mm × 156 Test specimen –– mm. 2 times 5 repeats per day on 3 subsequent days on the same measurement equipment. Test conditions –– the result for all dimensional wafer parameters defined in this test method are reported in the Results –– following Tables R1-1 and R1-2. Selected individual measurement results for side length, diagonals, diameters and angles are displayed in the Figures R1-1 through R1-8. Summary of the MSA for Pseudo-square Single Crystalline Si wafers Crystal mono Wafer Metric 1 2 3 4 5 Statistic mean 156070.6 156059.6 156063.2 156088.6 156091.3 W242 std.dev. 13.1 9.2 11.0 12.0 12.6 mean 156053.2 156077.5 156051.6 156092.8 156081.5 W241 Side std.dev. 11.6 9.2 12.1 10.5 8.9 Lengths mean 156077.7 156065.4 156082.2 156084.7 156106.6 W/µm W243 std.dev. 13.5 11.6 11.0 12.1 14.0 mean 156074.6 156040.1 156076.7 156067.3 156077.1 W132 std.dev. 10.8 9.3 9.3 8.0 7.3
The reference points are the full circles, squares and the hexagon. Schematic Drawing of the Metrics and the Reference Points of a Pseudo-Square Wafer. Schematic Drawing Outlining the Relations between Fi,j, Hi, i and i,j. MEASUREMENT SYSTEM ANALYSIS (MSA) NOTICE: This related information is not an official part of SEMI draft doc. 5434 and was derived from the global PV Materials Committee. This related information was approved for publication by full letter ballot on (date of approval). Purpose The MSA was performed for establishing the capability of the test method for usage in large volume Si wafer manufacturing. The measurements were performed on standard production equipment. Parameter Settings Parameter V was set to 1/4 of nominal side length. The measured values are reported in micrometer units and degrees as provided by the measurement equipment used. Results of MSA Test specimen –– 5 single crystalline and 5 multicrystalline Si wafers with nominal size of 156 mm × 156 mm. Test conditions –– 2 times 5 repeats per day on 3 subsequent days on the same measurement equipment. Results –– the result for all dimensional wafer parameters defined in this test method are reported in the following Tables R1-1 and R1-2. Selected individual measurement results for side length, diagonals, diameters and angles are displayed in the Figures R1-1 through R1-8. Summary of the MSA for Pseudo-square Single Crystalline Si wafers Crystal mono Metric Wafer Statistic 1 2 3 4 5 Side Lengths W/µm W242 mean 156070.6 156059.6 156063.2 156088.6 156091.3 std.dev. 13.1 9.2 11.0 12.0 12.6 W241 mean 156053.2 156077.5 156051.6 156092.8 156081.5 std.dev. 11.6 9.2 12.1 10.5 8.9 W243 mean 156077.7 156065.4 156082.2 156084.7 156106.6 std.dev. 13.5 11.6 11.0 12.1 14.0 W132 mean 156074.6 156040.1 156076.7 156067.3 156077.1 std.dev. 10.8 9.3 9.3 8.0 7.3
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