substrates. Note, however, that these estimates are to be considered upper limits for the tunneling depth, neglecting possible multi-phonon relaxation upon capture and, thus, the occurrence of capture by inelastic tunneling. 23 In order to quantify the equivalent surface trap density (Dt), the Nt in the a-Si:H is considered uniform (as shown by the CV hysteresis analysis) and it is furthermore assumed that the DLTS signal increases proportionally with the tunneling depth, so that Dt=Nt×d cm-2. On the other hand, the surface density of states (DOS) in a MIS capacitor can be derived from:5,22 (in cm-2eV-1) (3) In Eq. (3), is the permittivity of silicon ~10-12 F/cm, A the area of the capacitor, Cins the Si capacitance (in F), Ndop is 4.5x1015 cm-3 (p) and 1.7x1015 cm-3 (n). Finally, is a  peak width factor, estimated 2.5 from the Full Width at Half Maximum of the theoretical b1 Fourier transform DLTS signal 16 and k is is the quiescent Boltzmann’s constant. CR capacitance at VR and is the capacitance transient amplitude, which is proportional with the C vertical axis in Figs 6 and 10. To convert the T-axis into an activation energy, use is made of: 24 (p-Si) (4a) (n-Si) (4b) with the emission time constant and reported in Table I. EV,Si and EC,Si are the valence 0 n, p band maximum and the conduction band minimum in silicon, respectively. To refer the activation
substrates. Note, however, that these estimates are to be considered upper limits for the tunneling depth, neglecting possible multi-phonon relaxation upon capture and, thus, the occurrence of capture by inelastic tunneling. 23 In order to quantify the equivalent surface trap density (Dt), the Nt in the a-Si:H is considered uniform (as shown by the CV hysteresis analysis) and it is furthermore assumed that the DLTS signal increases proportionally with the tunneling depth, so that Dt=Nt×d cm-2. On the other hand, the surface density of states (DOS) in a MIS capacitor can be derived from:5,22 (in cm-2eV-1) (3) In Eq. (3), Si is the permittivity of silicon ~10-12 F/cm, A the area of the capacitor, Cins the capacitance (in F), Ndop is 4.5x1015 cm-3 (p) and 1.7x1015 cm-3 (n). Finally,  is a peak width factor, estimated 2.5 from the Full Width at Half Maximum of the theoretical b1 Fourier transform DLTS signal 16 and k is Boltzmann’s constant. CR is the quiescent capacitance at VR and C is the capacitance transient amplitude, which is proportional with the vertical axis in Figs 6 and 10. To convert the T-axis into an activation energy, use is made of: 24 (p-Si) (4a) (n-Si) (4b) with 0 the emission time constant and n, p reported in Table I. EV,Si and EC,Si are the valence band maximum and the conduction band minimum in silicon, respectively. To refer the activation
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