Part 3: With = 0 V and = 2.5 V, measure drain current at = 2, 2.5, 3, 3.5, 4, 4.5, 5, 5.5, and VSB VGS ID VDS 6 V using the connections shown in Figure 5(a) for an NMOS device. Part 4: With = 0 V and = 2.5 V, measure drain current at = 2, 2.5, 3, 3.5, 4, 4.5, 5, 5.5, and VBS VSG ID VSD 6 V using the connections shown in Figure 5(b) for a PMOS device. The specific values of VDD needed to give the foregoing values of are part of the pre-lab calculations. VSD If you experience rapidly increasing current for small changes in VSD, you have probably forward-biased the . source/substrate junction by incorrectly establishing VBS Data Analysis (Parts (5)–(8)): Assumed data: = 90 nm (90 x 10–7 cm = 0.09 m = 900Å) and = 100 for both NMOS and PMOS; tox W/L • approximate value of 2f 0.6 V; a more exact calculation is given as: • at 70F; (11) Part 5: Plot = for both devices at the three values of body bias. Draw the best-fit straight line vs. VGS VDS through your data points. From the intercepts, determine for = 0, 2, and 5 V for each device. From Vt the slope of the = 0 plots, determine the transconductance parameter = . k k´W/L Part 6:
Part 3: With VSB = 0 V and VGS = 2.5 V, measure drain current ID at VDS = 2, 2.5, 3, 3.5, 4, 4.5, 5, 5.5, and 6 V using the connections shown in Figure 5(a) for an NMOS device. Part 4: With VBS = 0 V and VSG = 2.5 V, measure drain current ID at VSD = 2, 2.5, 3, 3.5, 4, 4.5, 5, 5.5, and 6 V using the connections shown in Figure 5(b) for a PMOS device. The specific values of VDD needed to give the foregoing values of VSD are part of the pre-lab calculations. If you experience rapidly increasing current for small changes in VSD, you have probably forward-biased the source/substrate junction by incorrectly establishing VBS . Data Analysis (Parts (5)–(8)): Assumed data: • tox = 90 nm (90 x 10–7 cm = 0.09 m = 900Å) and W/L = 100 for both NMOS and PMOS; • approximate value of 2f 0.6 V; a more exact calculation is given as: at 70F; (11) Part 5: Plot vs. VGS = VDS for both devices at the three values of body bias. Draw the best-fit straight line through your data points. From the intercepts, determine Vt for = 0, 2, and 5 V for each device. From the slope of the = 0 plots, determine the transconductance parameter k = k´W/L . Part 6:
6-EEEE_381_Lab2_MOSFET_CZ_Rev2017.docx