the part. When compared to other AM methods, this process can be performed at lower temperature, temperatures ranging from 22oC to 204oC are possible; the temperature is normally 150oC (). Moreover, it uses a machining process to shape the contour of the final object precisely (). The main problem of this technique is voids that occur along the interfaces between layers because of foil surface roughness, insufficient or excessive welding energy, and positioning inaccuracies of foil placement (). This defect affects the strength of built parts (). Also, this technique can use only metal materials and it is inefficient in material usage due to the subtractive process. Furthermore, the system can fabricate multiple material objects but with only vertically oriented interfaces (). Fig. 11. Schematic system of UC (Left) and samples of material bonding (Right) a) Ni/Ag foils on Al 3003 -H14 substrate; b) 2Ag/Cu/Ni on Al 3003-H14 substrate; c) Ni/Cu foils welded on Al 3003-H14 substrate and d) Al 6061/Ni/Al 6061/Cu/Al 6061/Ag/Al 6061 on Al 6061-T6 substrate () The sheet lamination processes uses a relatively low processing temperature that is suitable for electronic encapsulation and embedded electronic system applications because it does not provide the protection of the embedded components. The challenge is the process parameter that can achieve a defect-free bonding layer at low temperature. Delamination between
the part. When compared to other AM methods, this process can be performed at lower temperature, temperatures ranging from 22oC to 204oC are possible; the temperature is normally 150oC (). Moreover, it uses a machining process to shape the contour of the final object precisely (). The main problem of this technique is voids that occur along the interfaces between layers because of foil surface roughness, insufficient or excessive welding energy, and positioning inaccuracies of foil placement (). This defect affects the strength of built parts (). Also, this technique can use only metal materials and it is inefficient in material usage due to the subtractive process. Furthermore, the system can fabricate multiple material objects but with only vertically oriented interfaces (). Fig. 11. Schematic system of UC (Left) and samples of material bonding (Right) a) Ni/Ag foils on Al 3003 -H14 substrate; b) 2Ag/Cu/Ni on Al 3003-H14 substrate; c) Ni/Cu foils welded on Al 3003-H14 substrate and d) Al 6061/Ni/Al 6061/Cu/Al 6061/Ag/Al 6061 on Al 6061-T6 substrate () The sheet lamination processes uses a relatively low processing temperature that is suitable for electronic encapsulation and embedded electronic system applications because it does not provide the protection of the embedded components. The challenge is the process parameter that can achieve a defect-free bonding layer at low temperature. Delamination between
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