capacitance of MoO3-GAs shows a decrease to 373 F g−1 at a scan rate of 200 mV s−1 from 636 F g−1 at 1.0 mVs−1. Furthermore, upon increasing the current density up to 10.0A g−1 from 1.0 A g−1, the specific capacitance of MoO3-GAs decreased only slightly to 210 F g−1 from 275 F g−1. Figure S9 (a) SEM image of MoO3 powders. (b) CV curve of MoO3 electrodes at the scan rate of 50 mV s−1. (c) Galvanostatic charge/discharge curves at a current density of 0.05A g−1.(d) Cycling stability of the MoO3 electrode at a current density of 0.05A g−1. Figure S10 Nyquist plots of the MoO3-GAs and GAs. The inset shows the equivalent circuit. Cd is double-layer capacitance, Rct is charge-transfer resistance, Zw is the Warburg impedance, and Rs represents the internal resistance of the electrodes. Figure S11 (a) SEM image, (b) Low and (c) high resolution TEM images and (d) Raman of MoO3-GAselectrode after cycling performance. Figure S12 Ragone plot of the MoO3-GAs electrode in 1 M H2SO4 aqueous solution. a) CV curves of GAs, L-MoO3-GAs, MoO3-GAs and H-MoO3-GAs electrodes Figure S13 measured at the scan rate of 50 mV s−1. b) CV curves of the H-MoO3-GAs electrode at 50 mV s the 1st, 40th and 100th cycle. SEM images of (c) L-MoO3-GAs and (d) −1of Figure S14 Cycling stability of MoO3-GAs electrode at a current density of 10.0 A g−1. Figure S15 Nitrogen adsorption/desorption isotherms of (a) the MoO3-GAs and (b) The specific surface area was 147.5 m2 g−1 for GAs, and 154.6 m2 g−1 for MoO3-GAs.
capacitance of MoO3-GAs shows a decrease to 373 F g−1 at a scan rate of 200 mV s−1 from 636 F g−1 at 1.0 mVs−1. Furthermore, upon increasing the current density up to 10.0A g−1 from 1.0 A g−1, the specific capacitance of MoO3-GAs decreased only slightly to 210 F g−1 from 275 F g−1. Figure S9 (a) SEM image of MoO3 powders. (b) CV curve of MoO3 electrodes at the scan rate of 50 mV s−1. (c) Galvanostatic charge/discharge curves at a current density of 0.05A g−1.(d) Cycling stability of the MoO3 electrode at a current density of 0.05A g−1. Figure S10 Nyquist plots of the MoO3-GAs and GAs. The inset shows the equivalent circuit. Cd is double-layer capacitance, Rct is charge-transfer resistance, Zw is the Warburg impedance, and Rs represents the internal resistance of the electrodes. Figure S11 (a) SEM image, (b) Low and (c) high resolution TEM images and (d) Raman of MoO3-GAselectrode after cycling performance. Figure S12 Ragone plot of the MoO3-GAs electrode in 1 M H2SO4 aqueous solution. Figure S13 a) CV curves of GAs, L-MoO3-GAs, MoO3-GAs and H-MoO3-GAs electrodes measured at the scan rate of 50 mV s−1. b) CV curves of the H-MoO3-GAs electrode at 50 mV s −1of the 1st, 40th and 100th cycle. SEM images of (c) L-MoO3-GAs and (d) Figure S14 Cycling stability of MoO3-GAs electrode at a current density of 10.0 A g−1. Figure S15 Nitrogen adsorption/desorption isotherms of (a) the MoO3-GAs and (b) The specific surface area was 147.5 m2 g−1 for GAs, and 154.6 m2 g−1 for MoO3-GAs.
1-s2.0-S221128551500018X-mmc1.docx