Appendices Appendix A Wafer details Internal Thesis wafer Location Description Observation identification identification p-i-n structure with 80 Surface current Rev1 PIN1 Chapter 5 nm undoped region, dominant semi-insulating substrate p-i-n structure with 230 Surface current Chapter 5 nm undoped region, Rev2 PIN2 dominant semi-insulating substrate p-i-n structure with 30 Negligible UCL1 PIN3 Chapter 6 nm undoped region, tunnelling conducting substrate current Bulk current dominant, with high tunnelling InGaAs/AlAsSb SAM current from IQE SAM APD1 Chapter 7 APD, with InAlAs in the InGaAs charge sheet layers absorption layer, and edge breakdown Bulk current dominant, with InGaAs/AlAsSb SAM high tunnelling SAM APD2 Chapter 7 APD, with AlAsSb in the current from charge sheet layers InGaAs absorption layer InGaAs/InAlAs SAM Dark current of M3698 SAM APD3 Appendix F APD, semi-insulating 10-100 nA substrate
Appendices Appendix A Wafer details Internal wafer identification Thesis identification Location Description Observation Rev1 PIN1 Chapter 5 p-i-n structure with 80 nm undoped region, semi-insulating substrate Surface current dominant Rev2 PIN2 Chapter 5 p-i-n structure with 230 nm undoped region, semi-insulating substrate Surface current dominant UCL1 PIN3 Chapter 6 p-i-n structure with 30 nm undoped region, conducting substrate Negligible tunnelling current IQE SAM APD1 Chapter 7 InGaAs/AlAsSb SAM APD, with InAlAs in the charge sheet layers Bulk current dominant, with high tunnelling current from InGaAs absorption layer, and edge breakdown SAM APD2 Chapter 7 InGaAs/AlAsSb SAM APD, with AlAsSb in the charge sheet layers Bulk current dominant, with high tunnelling current from InGaAs absorption layer M3698 SAM APD3 Appendix F InGaAs/InAlAs SAM APD, semi-insulating substrate Dark current of 10-100 nA
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