Dead space for electron de Dead space for hole dh Electron charge q Junction capacitance Cj Vacuum permitivity εo Dielectric constant εr Depletion width dw Device area A Ideality factor n Dark current Id Saturation current Io Boltzmann’s constant kB Series Resistance Rs Tunnelling current Itunn Effective electron mass m* Plank’s constant h Applied voltage V SMU Source measure unit AC Alternating current DC Direct current LIA Lock-in Amplifier Generation recombination current density Jgr Diffusion current density Jd Diffusion length of minority carrier L0 Phase of measured signal θsig Phase of reference signal θref Photocurrent Iph TIA Transimpedence amplifier TLM Transmission line model System resistance Rsys Contact resistance Rc Semiconductor resistance Rsemiconductor GSG Ground signal ground DUT Device under Test
de Dead space for electron dh Dead space for hole q Electron charge Cj Junction capacitance εo Vacuum permitivity εr Dielectric constant dw Depletion width A Device area n Ideality factor Id Dark current Io Saturation current kB Boltzmann’s constant Rs Series Resistance Itunn Tunnelling current m* Effective electron mass h Plank’s constant V Applied voltage SMU Source measure unit AC Alternating current DC Direct current LIA Lock-in Amplifier Jgr Generation recombination current density Jd Diffusion current density L0 Diffusion length of minority carrier θsig Phase of measured signal θref Phase of reference signal Iph Photocurrent TIA Transimpedence amplifier TLM Transmission line model Rsys System resistance Rc Contact resistance Rsemiconductor Semiconductor resistance GSG Ground signal ground DUT Device under Test
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