T9-1 Fabrication of Si nanowire thermoelectric harvester where the Si nanowires were patterned using argon fluoride (ArF) immersion lithography. Paper T9-1, High Power Density Silicon Thermoelectric Energy Harvester “10μW/cm2-Class Compatible with CMOS-VLSI Univ., Shizuoka Technology” M. Tomita et al., Waseda Univ., Osaka Univ. and AIST Japan
T9-1 Fabrication of Si nanowire thermoelectric harvester where the Si nanowires were patterned using argon fluoride (ArF) immersion lithography. Paper T9-1, “10μW/cm2-Class High Power Density Silicon Thermoelectric Energy Harvester Compatible with CMOS-VLSI Technology” M. Tomita et al., Waseda Univ., Osaka Univ., Shizuoka Univ. and AIST Japan
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