non-local models [] which accounted for dead space have been introduced to allow extraction of and The dead space (dh) is defined as the minimum distance that an electron (hole) de α β. has to travel before impact ionising, The random ionisation path length of an electron is xe described by its probability density function (PDF) is given by Pe(xe) (2.22) where is the ionisation coefficient after the dead space and is the dead space. The de α* integration is the probability of a carrier undergoing impact ionisation at the position A xe. similar expression is made for holes by replacing by simple dead space estimation α* β*.A using the threshold energies, for electron and for hole, can be given by the Ethe Ethh following equations. (2.23) (2.24) where is the electron charge and is the electric field. Conventionally can be deduced q E α* from the local ionisation coefficient and the dead space as following α (2.25) Using equation 2.22, the survival probability of an electron after travelling a distance Se(xe) is given by xe (2.26) By substituting to be a random number between 0 and 1, could be derived as Se(xe) r xe (2.27) The same expression also applies to the holes. Each injected carrier produces multiplied carriers with a multiplication factor The avalanche process is a stochastic process and the M.
non-local models [] which accounted for dead space have been introduced to allow extraction of α and β. The dead space de (dh) is defined as the minimum distance that an electron (hole) has to travel before impact ionising, The random ionisation path length of an electron xe is described by its probability density function (PDF) Pe(xe) is given by (2.22) where α* is the ionisation coefficient after the dead space and de is the dead space. The integration is the probability of a carrier undergoing impact ionisation at the position xe. A similar expression is made for holes by replacing α* by β*.A simple dead space estimation using the threshold energies, Ethe for electron and Ethh for hole, can be given by the following equations. (2.23) (2.24) where q is the electron charge and E is the electric field. Conventionally α* can be deduced from the local ionisation coefficient α and the dead space as following (2.25) Using equation 2.22, the survival probability Se(xe) of an electron after travelling a distance xe is given by (2.26) By substituting Se(xe) to be a random number r between 0 and 1, xe could be derived as (2.27) The same expression also applies to the holes. Each injected carrier produces multiplied carriers with a multiplication factor M. The avalanche process is a stochastic process and the
Thesis-Jingjing%2020130924%20final%20version.docx