release of energy in both the processes of nuclear fusion and fission. (c) Write the basic nuclear process of neutron undergoing b–decay. Why is the detection of neutrinos found very difficult?(5) (2006,2008,2009,2010,2011,2013) Text Book : PHYSICS PART II ( NCERT) Chapter 14: Semiconductor Electronics: Materials, devices and Simple circuits Frequency : ( Asked three times or more ) Sl.No. Question Marks Year Draw a simple circuit of a CE transistor amplifier. Explain its working. 1 2012(D) Show that the voltage gain AV, of the amplifier is given by Questions of similar ,where is the current gain, RL is the load resistance and ri is the input nature asked resistance of the transistor. What is the significance of the negative sign in 5 in the expression for the voltage gain? 2008, 2009 Explain the function of base region of a transistor. Why is this region made 2006, 2 thin and lightly doped? 2013 Draw a circuit diagram to study the input and output characteristics of n-p-n transistor in a common emitter (CE) configuration. Show these characteristics graphically. Explain how current amplification factor of the transistor is calculated using output characteristics. 5 OR (i) Draw a circuit diagram to study the input and output characteristics of 2009(D) an transistor in its common emitter configuration. Draw the typical n-p-n input and output characteristics. (ii) Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.
release of energy in both the processes of nuclear fusion and fission. (c) Write the basic nuclear process of neutron undergoing b–decay. Why is the detection of neutrinos found very difficult?(5) (2006,2008,2009,2010,2011,2013) Text Book : PHYSICS PART II ( NCERT) Chapter 14: Semiconductor Electronics: Materials, devices and Simple circuits Frequency : ( Asked three times or more ) Sl.No. Question Marks Year 1 Draw a simple circuit of a CE transistor amplifier. Explain its working. Show that the voltage gain AV, of the amplifier is given by ,where is the current gain, RL is the load resistance and ri is the input resistance of the transistor. What is the significance of the negative sign in the expression for the voltage gain? 5 2012(D) Questions of similar nature asked in 2008, 2009 2 Explain the function of base region of a transistor. Why is this region made thin and lightly doped? Draw a circuit diagram to study the input and output characteristics of n-p-n transistor in a common emitter (CE) configuration. Show these characteristics graphically. Explain how current amplification factor of the transistor is calculated using output characteristics. OR 5 2006, 2013 (i) Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics. (ii) Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier. 2009(D)
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