Philips, Luxeon Rebel blue and white LED of the Philips Lumileds Company (2014) Schubert E. F. (2006)“Light-Emitting 2nd edition, Cambridge University Press, Cambridge UK Diodes” Schubert M. F. (2010) tunnel junctions for ultraviolet light-emitters without p-type “Polarization-charge contact” 96, 031102 Applied Physics Letters Shimizu Y., Sakano K., Noguchi Y., and Moriguchi T. (1999) US Pat. 5,998,925 device “Light-emitting having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material” Shur M. S. and Gaska R. (2010) Light-Emitting Diodes” IEEE Transactions on “Deep-Ultraviolet 12 57, Electron Devices Stocker D. A., Schubert E. F., and Redwing J. M. (1998) wet chemical etching of GaN” “Crystallographic Applied Physics Letters 73, 2654 Taniyasu Y. and Kasu M. (2010) emission efficiency of 210nm Deep-ultraviolet aluminum “Improved nitride light-emitting diode” 8, 1 NTT Technical Review
Philips, Luxeon Rebel blue and white LED of the Philips Lumileds Company (2014) Schubert E. F. (2006)“Light-Emitting Diodes” 2nd edition, Cambridge University Press, Cambridge UK Schubert M. F. (2010) “Polarization-charge tunnel junctions for ultraviolet light-emitters without p-type contact” Applied Physics Letters 96, 031102 Shimizu Y., Sakano K., Noguchi Y., and Moriguchi T. (1999) US Pat. 5,998,925 “Light-emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material” Shur M. S. and Gaska R. (2010) “Deep-Ultraviolet Light-Emitting Diodes” IEEE Transactions on Electron Devices 57, 12 Stocker D. A., Schubert E. F., and Redwing J. M. (1998) “Crystallographic wet chemical etching of GaN” Applied Physics Letters 73, 2654 Taniyasu Y. and Kasu M. (2010) “Improved emission efficiency of 210nm Deep-ultraviolet aluminum nitride light-emitting diode” NTT Technical Review 8, 1
00-LED-chapter-contribution--Schubert--Kirk-Othmer-V06.docx