ionization energy. This is useful information as the same trends should be seen in an inkjetprinted alumina. Solutionprocessed alumina Recently, solutionprocessed alumina has been demonstrated as a dielectric with good results. This work is not directed towards RF MIMs but driven by thin film transistors, mostly for large area electronics (i.e. displays). Nevertheless, the spincoated films show potential used for RF MIMs and also to be printed. Some notable work in this area is in Table 23. Table 23: Spinoated Alumina Salt & Bottom & Dk Leakage Dk & Df Temp. Ref. Solvent Top Metal (A/cm2) oC (nm) (nm) AlCl3 Mo 110 6.3E-6 4 6.3 300 Avis 2011 ACN/EG IZO - [34] @10KHz Mo 40 120 6.3E-6 4 7.2 300 Kim 2013 ACN/EG Mo/Au 3/50 1MV/cm - [35] AlCl3 p+Si 95 ~3E-8 - 6.2 Nayak 2013 ACN/EG Al 80 @2V - [36] AlN3 Ti-Pt ~250 10E-7 >1.5 6.5 -7.5 550 Hu 2013 [37] Acetic Ti-Pt/Au 0.01 Acid @1KHz AlAc Mo 70 6.3E-6 4 6.3 150 Peng 2013 2-ME IZO - [38] @10KHz
ionization energy. This is useful information as the same trends should be seen in an inkjetprinted alumina. Solutionprocessed alumina Recently, solutionprocessed alumina has been demonstrated as a dielectric with good results. This work is not directed towards RF MIMs but driven by thin film transistors, mostly for large area electronics (i.e. displays). Nevertheless, the spincoated films show potential used for RF MIMs and also to be printed. Some notable work in this area is in Table 23. Table 23: Spinoated Alumina Salt & Solvent Bottom & Top Metal (nm) Dk (nm) Leakage (A/cm2) Dk & Df Temp. oC Ref. AlCl3 ACN/EG Mo IZO 110 6.3E-6 4 6.3 - @10KHz 300 Avis 2011 [34] ACN/EG Mo 40 Mo/Au 3/50 120 6.3E-6 1MV/cm 4 7.2 - 300 Kim 2013 [35] AlCl3 ACN/EG p+Si Al 80 95 ~3E-8 @2V - 6.2 - Nayak 2013 [36] AlN3 Acetic Acid Ti-Pt Ti-Pt/Au ~250 10E-7 >1.5 6.5 -7.5 0.01 @1KHz 550 Hu 2013 [37] AlAc 2-ME Mo IZO 70 6.3E-6 4 6.3 - @10KHz 150 Peng 2013 [38]
Scribbr%20-%2021330%20-%20proofreading-editing.docx