Philips, Luxeon Rebel blue and white LED of the Philips Lumileds Company (2014) Schubert E. F. 2nd edition, Cambridge University Press, Cambridge UK Diodes” Schubert M. F. (2010) tunnel junctions for ultraviolet without p-type “Polarization-charge contact” 96, 031102 Applied Physics Letters Shimizu Y., Sakano K., Noguchi Y., and Moriguchi T. (1999) US Pat. 5,998,925 device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material” Shur M. S. and R. (2010) Light-Emitting Diodes” IEEE Transactions on Electron “Deep-Ultraviolet 12 57, Devices Stocker D. A., Schubert E. F., and Redwing J. M. (1998) wet chemical etching of GaN” “Crystallographic Applied Physics Letters 73, 2654 Taniyasu Y. and Kasu M. (2010) emission efficiency of 210nm Deep-ultraviolet aluminum “Improved nitride light-emitting diode” 8, 1 NTT Technical Review
Philips, Luxeon Rebel blue and white LED of the Philips Lumileds Company (2014) Schubert E. F. Diodes” 2nd edition, Cambridge University Press, Cambridge UK Schubert M. F. (2010) “Polarization-charge tunnel junctions for ultraviolet without p-type contact” Applied Physics Letters 96, 031102 Shimizu Y., Sakano K., Noguchi Y., and Moriguchi T. (1999) US Pat. 5,998,925 device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material” Shur M. S. and R. (2010) “Deep-Ultraviolet Light-Emitting Diodes” IEEE Transactions on Electron Devices 57, 12 Stocker D. A., Schubert E. F., and Redwing J. M. (1998) “Crystallographic wet chemical etching of GaN” Applied Physics Letters 73, 2654 Taniyasu Y. and Kasu M. (2010) “Improved emission efficiency of 210nm Deep-ultraviolet aluminum nitride light-emitting diode” NTT Technical Review 8, 1
00-LED-chapter-contribution--Schubert--Kirk-Othmer-V07.docx