Session 1: Session Chair Joel Barnett – 9:20 AM INVITED: Selective etch requirements for the next generation of semiconductor devices Frank Holsteyns, imec – 9:45 AM RMG Wet Process Challenges and the Patterning Knobs towards N5 and Beyond Logic Devices Oniki Yusuke, imec – 10:05 AM Wet and Siconi® cleaning sequences for SiGe epitaxial regrowth – Raynal, CEA-Leti 10:55 AM Pre SiGe Wet Cleans Development for sub 14 nm Technology Node Akshey – Sehgal, GLOBALFOUNDRIES 11:15 AM GeSn surface preparation by wet cleaning and in-situ plasma treatments prior to metallization Pierre-Edouard Raynal, CEA-Leti – 11:35 AM Selective isotropic etching of Group IV semiconductors to enable gate all around device architectures Subhadeep Kal, TEL/imec – Session 2: Session Chairs Akshey Sehgal, Evelyn Kennedy – 1:30 PM INVITED: Improving BEOL for sub-10nm nodes Kevin Boyd, – GLOBALFOUNDRIES 1:55 PM Characterization of Post-etch Residue By Chemical Bonding Transformation Mapping Oliver Chyan, Univ. of North Texas –
Session 1: Session Chair – Joel Barnett 9:20 AM INVITED: Selective etch requirements for the next generation of semiconductor devices – Frank Holsteyns, imec 9:45 AM RMG Wet Process Challenges and the Patterning Knobs towards N5 and Beyond Logic Devices – Oniki Yusuke, imec 10:05 AM Wet and Siconi® cleaning sequences for SiGe epitaxial regrowth – Raynal, CEA-Leti 10:55 AM Pre SiGe Wet Cleans Development for sub 14 nm Technology Node – Akshey Sehgal, GLOBALFOUNDRIES 11:15 AM GeSn surface preparation by wet cleaning and in-situ plasma treatments prior to metallization – Pierre-Edouard Raynal, CEA-Leti 11:35 AM Selective isotropic etching of Group IV semiconductors to enable gate all around device architectures – Subhadeep Kal, TEL/imec Session 2: Session Chairs – Akshey Sehgal, Evelyn Kennedy 1:30 PM INVITED: Improving BEOL for sub-10nm nodes – Kevin Boyd, GLOBALFOUNDRIES 1:55 PM Characterization of Post-etch Residue By Chemical Bonding Transformation Mapping – Oliver Chyan, Univ. of North Texas
00-SPCC-2018-Notes.docx