Written responses - 9 John Amy- Navy The Navy perspective: (1) Demonstrate reduced losses (not the same as converter efficiencies) (2) Demonstrate high frequency (higher than Si) wave forms. Subhashish Bhattacharya North Carolina State University – Performance in terms of current/torque control Roger Cooley Northrup Grumman – Increased Fgas to reduce size and cost of passives Rajib Datta GE – Power density which should translate to system level cost saving. Dave Grider Cree – What are requirements of HV SiC Devices and Modules ( 10 kV-15 kV SiC MOSFET, kV SiC IGBT) in terms of short circuit capability, SOA (RBSOA, ≥15 FBSOA), Current, Voltage, Switching Frequency, Thermal Cycling, Operating Temperature Stephen Kuznetsov Raytheon – (1)Slew rate of VSD in going from full-speed forward to full-speed reverse is an essential and limiting performance characteristic for a bidirectional drive. (2)Ability of a VSD to ride thru a load short-circuit without damage. Tim McCoy McCoy Consulting – Depends on specifics of application. Could be frequency, efficiency, high – temperature, size/weight Brij N. Singh - John Deere Inc. WBG VSD should operate at higher voltage, temperature and switching frequencies as compared to Silicon VSDs. John Shegirian General Dynamics – Reduced cooling and filtering requirements. Elimination of input transformers. Question 3a. What additional technology and advanced device performance are needed for HMW (for example, which SiC or Si devices type/voltages, etc. VSD’s would be most beneficial)? Written responses - 12 John Amy- Navy
Written responses - 9 John Amy- Navy The Navy perspective: (1) Demonstrate reduced losses (not the same as converter efficiencies) (2) Demonstrate high frequency (higher than Si) wave forms. Subhashish Bhattacharya – North Carolina State University Performance in terms of current/torque control Roger Cooley – Northrup Grumman Increased Fgas to reduce size and cost of passives Rajib Datta – GE Power density which should translate to system level cost saving. Dave Grider – Cree What are requirements of HV SiC Devices and Modules ( 10 kV-15 kV SiC MOSFET, ≥15 kV SiC IGBT) in terms of short circuit capability, SOA (RBSOA, FBSOA), Current, Voltage, Switching Frequency, Thermal Cycling, Operating Temperature Stephen Kuznetsov – Raytheon (1)Slew rate of VSD in going from full-speed forward to full-speed reverse is an essential and limiting performance characteristic for a bidirectional drive. (2)Ability of a VSD to ride thru a load short-circuit without damage. Tim McCoy – McCoy Consulting Depends on specifics of application. Could be – frequency, efficiency, high temperature, size/weight Brij N. Singh - John Deere Inc. WBG VSD should operate at higher voltage, temperature and switching frequencies as compared to Silicon VSDs. John Shegirian – General Dynamics Reduced cooling and filtering requirements. Elimination of input transformers. Question 3a. What additional technology and advanced device performance are needed for HMW VSD’s (for example, which SiC or Si devices type/voltages, etc. would be most beneficial)? Written responses - 12 John Amy- Navy
Proceedings-of-HMW-VSD-Motor-Technology-Workshop-1.docx