Room temperature A. K. Katiyar, direct band gap emission A. Grimm, Nanotechnology characteristics of R. Bar, S. Jan, 4 International 27, 435204 2016 surfactant mediated T. Wietler, H. (2016) grown compressively J. Osten, S. K. strained Ge films Ray A. P. Growth of Au capped Guha, S. GeO2 nanowires for Appl. Phy. Lett. 5 International 2016 Mukharjee, R. 109, visible-light 123105 Bar, S. K. Ray, (2016) photodetection P. V. Satyam Tuning the work A. Ghosh, P. function of randomly Guha, R. oriented ZnO Thapa, S. nanostructures by Nanotechnology Selvaraj, M. capping with faceted Au 6 International 27, 125701 2016 Kumar, B. nanostructure and (2016) Rakshit, T. oxygen defects: Dash, R. Bar, enhanced field emission S. K Ray, P. V. experiments and DFT Satyam studies Multilayer Ge R. Bar, R. nanocrystals embedded Aluguri, S. Appl. Phys. Lett. within Al2O3 matrix for A. 7 International 107, 093102 2015 high performance Ghosh, P. V. (2015) floating gate memory Satyam, S. K. devices Ray Enhancement of S. Manna, photoluminescence R. Aluguri, Nanotechnology intensity of erbium R. Bar, S. Das, 8 045202 doped silica containing 2015 International 26, N. Prtljaga, L. (2015) Ge nanocrystals: Pavesi, S. K. distance dependent Ray interactions
4 International Nanotechnology 27, 435204 (2016) Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films 2016 A. K. Katiyar, A. Grimm, R. Bar, S. Jan, T. Wietler, H. J. Osten, S. K. Ray 5 International Appl. Phy. Lett. 109, 123105 (2016) Growth of Au capped GeO2 nanowires for visible-light photodetection 2016 A. P. Guha, S. Mukharjee, R. Bar, S. K. Ray, P. V. Satyam 6 International Nanotechnology 27, 125701 (2016) Tuning the work function of randomly oriented ZnO nanostructures by capping with faceted Au nanostructure and oxygen defects: enhanced field emission experiments and DFT studies 2016 A. Ghosh, P. Guha, R. Thapa, S. Selvaraj, M. Kumar, B. Rakshit, T. Dash, R. Bar, S. K Ray, P. V. Satyam 7 International Appl. Phys. Lett. 107, 093102 (2015) Multilayer Ge nanocrystals embedded within Al2O3 matrix for high performance floating gate memory devices 2015 R. Bar, R. Aluguri, S. A. Ghosh, P. V. Satyam, S. K. Ray 8 International Nanotechnology 26, 045202 (2015) Enhancement of photoluminescence intensity of erbium doped silica containing Ge nanocrystals: distance dependent interactions 2015 S. Manna, R. Aluguri, R. Bar, S. Das, N. Prtljaga, L. Pavesi, S. K. Ray
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