Radiocommunication Study Groups Source: Document 1A/TEMP/57 (edited) Annex 2 to Document 1A/166-E 24 June 2014 English only 2 to Working Party 1A Chairman’s Report ITU-R Technology trends of active services in the band above 275 GHz Scope This Report contains technology trends of active services in the band above 275 GHz. This Report intends to provide technical information for preparation of sharing and compatibility studies between active and passive services, as well as among active services in the band above 275 GHz. Abbreviations and acronyms ATR Attenuated Total Reflection spectrometry BNA N-Benzyl-2-Methyl-4-Nitroaniline BWO Backward-Wave Oscillator DAST Diethylaminosulfur Trifluoride DFG Difference Frequency Generation FEL Free-Electron Laser FTIR Fourier Transform Infrared spectroscopy HBT Heterojunction Bipolar Transistor HEMT High Electron Mobility Transistor IMPATT Impact Ionization Avalanche Transit-Time LoS Line of Sight LT-GaAs Low Temperature grown Gallium Arsenide MMIC Monolithic Microwave Integrated Circuit NEP Noise Equivalent Power NFC Near Communication NLoS Non Line of Sight QCL Quantum Cascade Laser RTD Resonant Tunnelling Diode TDS Time Domain Spectroscopy TNNNET Tunnel Injection Transit-Time THz Terahertz
Radiocommunication Study Groups Source: Document 1A/TEMP/57 (edited) Annex 2 to Document 1A/166-E 24 June 2014 English only 2 to Working Party 1A Chairman’s Report ITU-R Technology trends of active services in the band above 275 GHz Scope This Report contains technology trends of active services in the band above 275 GHz. This Report intends to provide technical information for preparation of sharing and compatibility studies between active and passive services, as well as among active services in the band above 275 GHz. Abbreviations and acronyms ATR Attenuated Total Reflection spectrometry BNA N-Benzyl-2-Methyl-4-Nitroaniline BWO Backward-Wave Oscillator DAST Diethylaminosulfur Trifluoride DFG Difference Frequency Generation FEL Free-Electron Laser FTIR Fourier Transform Infrared spectroscopy HBT Heterojunction Bipolar Transistor HEMT High Electron Mobility Transistor IMPATT Impact Ionization Avalanche Transit-Time LoS Line of Sight LT-GaAs Low Temperature grown Gallium Arsenide MMIC Monolithic Microwave Integrated Circuit NEP Noise Equivalent Power NFC Near Communication NLoS Non Line of Sight QCL Quantum Cascade Laser RTD Resonant Tunnelling Diode TDS Time Domain Spectroscopy TNNNET Tunnel Injection Transit-Time THz Terahertz
15-14-0539-00-003d-response-to-itu-r-discussion-document.docx