Fig. 4(b) Design an n-channel MOSFET circuit is as shown in Fig. 4(c) has the following specifications: = 5 V, = -5 V, 0.48 mA/V2 and = 1.5 V. VDD VSS Kn= VTN Assume that, = 0.6 mA, 3.5 V and the MOSFET is operating in the IDQ VDSQ= saturation region. (10 marks) Fig. 4(c) Q.5 [20 marks] Determine the small-signal voltage gain, input and output resistances of a common-source amplifier as shown in Fig. 5(a). The circuit parameters are, VDD = 4.5V, = 4.7 = 120 = and = RD R1 R2 RSi kΩ, kΩ, 47 kΩ 4 kΩ. Transistor parameters are = 0.6 mA/V2 and = 0.025 V-1 (6 marks) Kn λ Fig. 5(a) Fig. 5 (b) shows an n-channel MOSFET logic gate. Draw the corresponding truth table of the logic gate. (3 marks) Identify the function of the circuit (AND/OR/NOR/NAND gate). (1 marks)
Fig. 4(b) Design an n-channel MOSFET circuit is as shown in Fig. 4(c) has the following specifications: VDD = 5 V, VSS = -5 V, Kn= 0.48 mA/V2 and VTN = 1.5 V. Assume that, IDQ = 0.6 mA, VDSQ= 3.5 V and the MOSFET is operating in the saturation region. (10 marks) Fig. 4(c) Q.5 [20 marks] Determine the small-signal voltage gain, input and output resistances of a common-source amplifier as shown in Fig. 5(a). The circuit parameters are, VDD = 4.5V, RD = 4.7 kΩ, R1 = 120 kΩ, R2 = 47 kΩ and RSi = 4 kΩ. Transistor parameters are Kn = 0.6 mA/V2 and λ = 0.025 V-1 (6 marks) Fig. 5(a) Fig. 5 (b) shows an n-channel MOSFET logic gate. Draw the corresponding truth table of the logic gate. (3 marks) Identify the function of the circuit (AND/OR/NOR/NAND gate). (1 marks)
Final%20Exam%20ECE%201312%20Sem-1%202013-2014.docx