34. Liu, L., et al., Spin-torque switching with the giant spin Hall effect of tantalum. Science, 2012. 336(6081): p. 555-558. 35. I.M., et al., Perpendicular switching of a single ferromagnetic layer induced by Nature, 2011. 476(7359): p. 189-193. in-plane current injection. 36. Akerman, J., Science, 2005. 308(5721): Applied physics. Toward a universal memory. p. 508-10. 37. Marrows, C.H., L.C. Chapon, and S. Langridge, Spintronics and functional materials. Materials Today, 2009. 12(7-8): p. 70-77. 38. Dieny, B., et al., Magnetotransport properties of magnetically soft spin‐valve Journal of Applied Physics, 1991. 69(8): p. 4774-4779. structures. 39. Parkin, S. and D. Spin engineering: Direct determination of the Physical Review B, 1991. far-field range function in ruthenium. 44(13): p. 7131. 40. Zhu, J.-G., Spin and dual spin valve heads with synthetic antiferromagnets. Magnetics, IEEE Transactions on, 1999. 35(2): p. 655-660. 41. Sbiaa, R., H. Meng, and S. Piramanayagam, Materials with perpendicular magnetic physica status solidi (RRL)-Rapid anisotropy for magnetic random access memory. Research Letters, 2011. 5(12): p. 413-419. 42. Thomson, W., On the electro-dynamic qualities of metals:--effects of magnetization Proceedings of the Royal Society of on the electric conductivity of nickel and of iron. London, 1856. 8: p. 546-550. 43. Nickel, J., 1995: Hewlett-Packard Laboratories, Magnetoresistance overview. Technical Publications Department Palo Alto, CA, USA. 44. R., Magnetoresistive Read Heads: Fundamentals and Functionality. Developments in Data Storage: Materials Perspective, 2011: p. 97.
34. Liu, L., et al., Spin-torque switching with the giant spin Hall effect of tantalum. Science, 2012. 336(6081): p. 555-558. 35. I.M., et al., Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection. Nature, 2011. 476(7359): p. 189-193. 36. Akerman, J., Applied physics. Toward a universal memory. Science, 2005. 308(5721): p. 508-10. 37. Marrows, C.H., L.C. Chapon, and S. Langridge, Spintronics and functional materials. Materials Today, 2009. 12(7-8): p. 70-77. 38. Dieny, B., et al., Magnetotransport properties of magnetically soft spin‐valve structures. Journal of Applied Physics, 1991. 69(8): p. 4774-4779. 39. Parkin, S. and D. Spin engineering: Direct determination of the far-field range function in ruthenium. Physical Review B, 1991. 44(13): p. 7131. 40. Zhu, J.-G., Spin and dual spin valve heads with synthetic antiferromagnets. Magnetics, IEEE Transactions on, 1999. 35(2): p. 655-660. 41. Sbiaa, R., H. Meng, and S. Piramanayagam, Materials with perpendicular magnetic anisotropy for magnetic random access memory. physica status solidi (RRL)-Rapid Research Letters, 2011. 5(12): p. 413-419. 42. Thomson, W., On the electro-dynamic qualities of metals:--effects of magnetization on the electric conductivity of nickel and of iron. Proceedings of the Royal Society of London, 1856. 8: p. 546-550. 43. Nickel, J., Magnetoresistance overview. 1995: Hewlett-Packard Laboratories, Technical Publications Department Palo Alto, CA, USA. 44. R., Magnetoresistive Read Heads: Fundamentals and Functionality. Developments in Data Storage: Materials Perspective, 2011: p. 97.
MRAM_Review_Ver1_Mat_Today.docx