74. Yuasa, S., et al. Giant tunneling magnetoresistance in MgO-based magnetic tunnel in junctions and its industrial applications. Nanotechnology Materials and Devices 2006. IEEE. Conference, 2006. NMDC 2006. IEEE. 75. Yuasa, S., et al., High tunnel magnetoresistance at room temperature in fully epitaxial Japanese Fe/MgO/Fe tunnel junctions due to coherent spin-polarized tunneling. Journal of Applied Physics, 2004. 43(4B): p. L588. 76. Edmund, C.S., Reports on progress in Ferromagnetism: magnetization curves. physics, 1950. 13(1): p. 83. 77. Daughton, J., Thin Solid Films, 1992. 216(1): Magnetoresistive memory technology. p. 162-168. 78. Zhu, J.-G., Magnetoresistive random access memory: The path to competitiveness and Proceedings of the IEEE, 2008. 96(11): p. 1786-1798. scalability. 79. Prejbeanu, I., et al., Journal of Physics: Condensed Thermally assisted MRAM. Matter, 2007. p. 165218. 19(16): 80. R.S., et al., Journal of Applied Curie point written magnetoresistive memory. Physics, 2000. 87(9): p. 6403-6405. 81. Hosomi, M., et al., A novel nonvolatile memory with spin torque transfer IEDM Tech. Dig, 2005. 459. magnetization switching: Spin-RAM. 82. Tsymbal, E.Y., O.N. Mryasov, and P.R. LeClair, Spin-dependent tunnelling in Journal of Physics: Condensed Matter, 2003. 15(4): p. magnetic tunnel junctions. R109. 83. Parkin, S., et al., Magnetically engineered spintronic sensors and memory. Proceedings of the IEEE, 2003. p. 661-680. 91(5): 84. Yang, T., et al., Journal of Manipulating Spin Current in the Magnetic Nanopillar. nanoscience and nanotechnology, 2007. 7(1): p. 259-264.
74. Yuasa, S., et al. Giant tunneling magnetoresistance in MgO-based magnetic tunnel junctions and its industrial applications. in Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE. 2006. IEEE. 75. Yuasa, S., et al., High tunnel magnetoresistance at room temperature in fully epitaxial Fe/MgO/Fe tunnel junctions due to coherent spin-polarized tunneling. Japanese Journal of Applied Physics, 2004. 43(4B): p. L588. 76. Edmund, C.S., Ferromagnetism: magnetization curves. Reports on progress in physics, 1950. 13(1): p. 83. 77. Daughton, J., Magnetoresistive memory technology. Thin Solid Films, 1992. 216(1): p. 162-168. 78. Zhu, J.-G., Magnetoresistive random access memory: The path to competitiveness and scalability. Proceedings of the IEEE, 2008. 96(11): p. 1786-1798. 79. Prejbeanu, I., et al., Thermally assisted MRAM. Journal of Physics: Condensed Matter, 2007. 19(16): p. 165218. 80. R.S., et al., Curie point written magnetoresistive memory. Journal of Applied Physics, 2000. 87(9): p. 6403-6405. 81. Hosomi, M., et al., A novel nonvolatile memory with spin torque transfer magnetization switching: Spin-RAM. IEDM Tech. Dig, 2005. 459. 82. Tsymbal, E.Y., O.N. Mryasov, and P.R. LeClair, Spin-dependent tunnelling in magnetic tunnel junctions. Journal of Physics: Condensed Matter, 2003. 15(4): p. R109. 83. Parkin, S., et al., Magnetically engineered spintronic sensors and memory. Proceedings of the IEEE, 2003. 91(5): p. 661-680. 84. Yang, T., et al., Manipulating Spin Current in the Magnetic Nanopillar. Journal of nanoscience and nanotechnology, 2007. 7(1): p. 259-264.
MRAM_Review_Ver1_Mat_Today.docx