105. Worledge, D., et al., Applied Spin torque switching of perpendicular Ta form=. Physics Letters, 2011. 98(2): p. 2501. 106. Tahmasebi, T. and S.N. Piramanayagam, 2012, Google Magnetoresistance Device. Patents. 107. Sato, H., et al., Perpendicular-anisotropy magnetic tunnel junctions with a Applied Physics Letters, 2012. MgO/CoFeB/Ta/CoFeB/MgO recording structure. 101(2): p. 022414. 108. Sbiaa, R., et al., Spin transfer torque switching for multi-bit per cell magnetic memory Applied Physics Letters, 2011. 99(9): p. 092506. with perpendicular anisotropy. 109. Sbiaa, R., Applied Physics Magnetization reversal driven by a spin torque oscillator. Letters, 2014. 105(9): p. 092407. 110. Jourdan, M., Materials 2014. Revival of Heusler compounds for spintronics. 17(8): p. 362-363. 111. Diao, Z., et al., Spin transfer switching in dual MgO magnetic tunnel junctions. Applied Physics Letters, 2007. 90(13): p. 132508. 112. Hu, G., et al. in STT-MRAM with double magnetic tunnel junctions. Electron Devices 2015. IEEE. Meeting (IEDM), 2015 IEEE International. 113. Liu, H., et al., Precessional reversal in orthogonal spin transfer magnetic random Applied Physics Letters, 2012. 101(3). access memory devices. 114. Liu, H., et al., Ultrafast switching in magnetic tunnel junction orthogonal spin Applied Physics Letters, 2010. 97(24). transfer devices. 115. Sbiaa, R., S. Piramanayagam, and T. Liew, High speed in spin‐torque‐based magnetic physica status solidi (RRL)-Rapid Research memory using magnetic nanocontacts. Letters, 2013. 7(5): p. 332-335.
105. Worledge, D., et al., Spin torque switching of perpendicular Ta form=. Applied Physics Letters, 2011. 98(2): p. 2501. 106. Tahmasebi, T. and S.N. Piramanayagam, Magnetoresistance Device. 2012, Google Patents. 107. Sato, H., et al., Perpendicular-anisotropy magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure. Applied Physics Letters, 2012. 101(2): p. 022414. 108. Sbiaa, R., et al., Spin transfer torque switching for multi-bit per cell magnetic memory with perpendicular anisotropy. Applied Physics Letters, 2011. 99(9): p. 092506. 109. Sbiaa, R., Magnetization reversal driven by a spin torque oscillator. Applied Physics Letters, 2014. 105(9): p. 092407. 110. Jourdan, M., Revival of Heusler compounds for spintronics. Materials 2014. 17(8): p. 362-363. 111. Diao, Z., et al., Spin transfer switching in dual MgO magnetic tunnel junctions. Applied Physics Letters, 2007. 90(13): p. 132508. 112. Hu, G., et al. STT-MRAM with double magnetic tunnel junctions. in Electron Devices Meeting (IEDM), 2015 IEEE International. 2015. IEEE. 113. Liu, H., et al., Precessional reversal in orthogonal spin transfer magnetic random access memory devices. Applied Physics Letters, 2012. 101(3). 114. Liu, H., et al., Ultrafast switching in magnetic tunnel junction orthogonal spin transfer devices. Applied Physics Letters, 2010. 97(24). 115. Sbiaa, R., S. Piramanayagam, and T. Liew, High speed in spin‐torque‐based magnetic memory using magnetic nanocontacts. physica status solidi (RRL)-Rapid Research Letters, 2013. 7(5): p. 332-335.
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