In this article, the recent progress of III-V quantum dot lasers on silicon substrates for silicon photonic integration is reviewed. By introducing various epitaxial techniques, room-temperature 1.3-μm InAs/GaAs quantum dot laser on Si, Ge and SiGe substrates have been achieved respectively. Quantum dot lasers on Ge substrate has an ultra-low threshold current density of 55.2 A/cm2 at room temperature, which can operate over 60 ?C in continuous-wave mode. Futhermore, by using the SiGe virtual substrate, at 30 ?C and an output power of 16.6 mW, a laser lifetime of 4600 h has been reached, which indicates a bright future for the large-scale photonic integration.
半导体激光 激光材料 集成光学 光电子器件