thin films of hafnium silicate and zirconium silicate grown by atomic layer deposition, chemical vapor deposition or mocvd, can be used as a high-k dielectric as a replacement for silicon dioxide in modern semiconductor devices. the addition of silicon to hafnium oxide increases the band gap, while decreasing the dielectric constant. furthermore, it increases the crystallization temperature of amorphous films and further increases the material's thermal stability with si at high temperatures. nitrogen is sometimes added to hafnium silicate for improving the thermal stability and electrical properties of devices.