Supercapacitor
Since capacitors' energy content increases with the square of the voltage, researchers were looking for a way to increase the electrolyte's breakdown voltage. In 1994 using the anode of a 200V high voltage tantalum electrolytic capacitor, David A. Evans developed an "Electrolytic-Hybrid Electrochemical Capacitor". These capacitors combine features of electrolytic and electrochemical capacitors. They combine the high dielectric strength of an anode from an electrolytic capacitor with the high capacitance of a pseudocapacitive metal oxide (ruthenium (IV) oxide) cathode from an electrochemical capacitor, yielding a hybrid electrochemical capacitor. Evans' capacitors, coined Capattery, had an energy content about a factor of 5 higher than a comparable tantalum electrolytic capacitor of the same size. Their high costs limited them to specific military applications.
History of the transistor
Scientists theorized that silicon would be easier to fabricate, but few bothered to investigate this possibility. Morris Tanenbaum et al. at Bell Laboratories were the first to develop a working silicon transistor on January 26, 1954. A few months later, Gordon Teal, working independently at Texas Instruments, developed a similar device. Both of these devices were made by controlling the doping of single silicon crystals while they were grown from molten silicon. A far superior method was developed by Morris Tanenbaum and Calvin S. Fuller at Bell Laboratories in early 1955 by the gaseous diffusion of donor and acceptor impurities into single crystal silicon chips.