History of electrochemistry
In 1789, Franz Aepinus developed a device with the properties of a "condenser" (now known as a capacitor.) The Aepinus condenser was the first capacitor developed after the Leyden jar, and was used to demonstrate conduction and induction. The device was constructed so that the space between two plates could be adjusted, and the glass dielectric separating the two plates could be removed or replaced with other materials.
MOSFET
In 1959, Dawon Kahng and Martin M. (John) Atalla at Bell Labs invented the metal-oxide-semiconductor field-effect transistor (MOSFET) as an offshoot to the patented FET design. Operationally and structurally different from the bipolar junction transistor, the MOSFET was made by putting an insulating layer on the surface of the semiconductor and then placing a metallic gate electrode on that. It used crystalline silicon for the semiconductor and a thermally oxidized layer of silicon dioxide for the insulator. The silicon MOSFET did not generate localized electron traps at the interface between the silicon and its native oxide layer, and thus was inherently free from the trapping and scattering of carriers that had impeded the performance of earlier field-effect transistors.