Supercapacitor
Since capacitors' energy content increases with the square of the voltage, researchers were looking for a way to increase the electrolyte's breakdown voltage. In 1994 using the anode of a 200V high voltage tantalum electrolytic capacitor, David A. Evans developed an "Electrolytic-Hybrid Electrochemical Capacitor". These capacitors combine features of electrolytic and electrochemical capacitors. They combine the high dielectric strength of an anode from an electrolytic capacitor with the high capacitance of a pseudocapacitive metal oxide (ruthenium (IV) oxide) cathode from an electrochemical capacitor, yielding a hybrid electrochemical capacitor. Evans' capacitors, coined Capattery, had an energy content about a factor of 5 higher than a comparable tantalum electrolytic capacitor of the same size. Their high costs limited them to specific military applications.
MOSFET
In 1959, Dawon Kahng and Martin M. (John) Atalla at Bell Labs invented the metal-oxide-semiconductor field-effect transistor (MOSFET) as an offshoot to the patented FET design. Operationally and structurally different from the bipolar junction transistor, the MOSFET was made by putting an insulating layer on the surface of the semiconductor and then placing a metallic gate electrode on that. It used crystalline silicon for the semiconductor and a thermally oxidized layer of silicon dioxide for the insulator. The silicon MOSFET did not generate localized electron traps at the interface between the silicon and its native oxide layer, and thus was inherently free from the trapping and scattering of carriers that had impeded the performance of earlier field-effect transistors.