History of electrochemistry
In 1789, Franz Aepinus developed a device with the properties of a "condenser" (now known as a capacitor.) The Aepinus condenser was the first capacitor developed after the Leyden jar, and was used to demonstrate conduction and induction. The device was constructed so that the space between two plates could be adjusted, and the glass dielectric separating the two plates could be removed or replaced with other materials.
Insulated-gate bipolar transistor
IGBT mode of operation was first proposed by Yamagami in his Japanese patent S47-21739, which was filed in 1968. This mode of operation was first experimentally reported in the lateral four-layer device (SCR) by B. W. Scharf and J. D. Plummer in 1978. This mode of operation was also experimentally discovered in vertical device in 1979 by B. Jayant Baliga. The device structure was referred to as a "V-groove MOSFET device with the drain region replaced by a p-type anode region" in this paper and subsequently as "the insulated-gate rectifier" (IGR), the insulated-gate transistor (IGT), the conductivity-modulated field-effect transistor (COMFET) and "bipolar-mode MOSFET".