Niobium capacitor
The development of solid electrolyte tantalum capacitors began in the early 1950s as a miniaturized, more reliable low-voltage support capacitor to complement the newly invented transistor. The solution found by R. L. Taylor and H. E. Haring of the Bell Labs was based on experience with ceramics. They ground down tantalum to a powder, pressed this powder into a cylindrical form and then sintered the powder particles into a pellet (“slug”) at high temperatures, between 1500 and 2000 °C, under vacuum conditions. These first sintered tantalum capacitors used a non-solid electrolyte not consistent with the concept of solid state electronics. 1952 a targeted search in the Bell Labs for a solid electrolyte by D. A. McLean and F. S. Power led to the invention of manganese dioxide as a solid electrolyte for a sintered tantalum capacitor.
History of the transistor
Scientists theorized that silicon would be easier to fabricate, but few bothered to investigate this possibility. Morris Tanenbaum et al. at Bell Laboratories were the first to develop a working silicon transistor on January 26, 1954. A few months later, Gordon Teal, working independently at Texas Instruments, developed a similar device. Both of these devices were made by controlling the doping of single silicon crystals while they were grown from molten silicon. A far superior method was developed by Morris Tanenbaum and Calvin S. Fuller at Bell Laboratories in early 1955 by the gaseous diffusion of donor and acceptor impurities into single crystal silicon chips.