History of electrochemistry
In 1789, Franz Aepinus developed a device with the properties of a "condenser" (now known as a capacitor.) The Aepinus condenser was the first capacitor developed after the Leyden jar, and was used to demonstrate conduction and induction. The device was constructed so that the space between two plates could be adjusted, and the glass dielectric separating the two plates could be removed or replaced with other materials.
Dynamic random-access memory
In 1964, Arnold Farber and Eugene Schlig, working for IBM, created a hard-wired memory cell, using a transistor gate and tunnel diode latch. They replaced the latch with two transistors and two resistors, a configuration that became known as the Farber-Schlig cell. In 1965, Benjamin Agusta and his team at IBM created a 16-bit silicon memory chip based on the Farber-Schlig cell, with 80 transistors, 64 resistors, and 4 diodes. In 1966, DRAM was invented by Dr. Robert Dennard at the IBM Thomas J. Watson Research Center. He was granted U.S. patent number 3,387,286 in 1968. Capacitors had been used for earlier memory schemes such as the drum of the Atanasoff–Berry Computer, the Williams tube and the Selectron tube.