Supercapacitor
Since capacitors' energy content increases with the square of the voltage, researchers were looking for a way to increase the electrolyte's breakdown voltage. In 1994 using the anode of a 200V high voltage tantalum electrolytic capacitor, David A. Evans developed an "Electrolytic-Hybrid Electrochemical Capacitor". These capacitors combine features of electrolytic and electrochemical capacitors. They combine the high dielectric strength of an anode from an electrolytic capacitor with the high capacitance of a pseudocapacitive metal oxide (ruthenium (IV) oxide) cathode from an electrochemical capacitor, yielding a hybrid electrochemical capacitor. Evans' capacitors, coined Capattery, had an energy content about a factor of 5 higher than a comparable tantalum electrolytic capacitor of the same size. Their high costs limited them to specific military applications.
EPROM
Development of the EPROM memory cell started with investigation of faulty integrated circuits where the gate connections of transistors had broken. Stored charge on these isolated gates changed their properties. The EPROM was invented by Dov Frohman of Intel in 1971, who was awarded US patent 3660819 in 1972.
Each storage location of an EPROM consists of a single field-effect transistor. Each field-effect transistor consists of a channel in the semiconductor body of the device. Source and drain contacts are made to regions at the end of the channel. An insulating layer of oxide is grown over the channel, then a conductive (silicon or aluminum) gate electrode is deposited, and a further thick layer of oxide is deposited over the gate electrode. The floating-gate electrode has no connections to other parts of the integrated circuit and is completely insulated by the surrounding layers of oxide. A control gate electrode is deposited and further oxide covers it.