Supercapacitor
Since capacitors' energy content increases with the square of the voltage, researchers were looking for a way to increase the electrolyte's breakdown voltage. In 1994 using the anode of a 200V high voltage tantalum electrolytic capacitor, David A. Evans developed an "Electrolytic-Hybrid Electrochemical Capacitor". These capacitors combine features of electrolytic and electrochemical capacitors. They combine the high dielectric strength of an anode from an electrolytic capacitor with the high capacitance of a pseudocapacitive metal oxide (ruthenium (IV) oxide) cathode from an electrochemical capacitor, yielding a hybrid electrochemical capacitor. Evans' capacitors, coined Capattery, had an energy content about a factor of 5 higher than a comparable tantalum electrolytic capacitor of the same size. Their high costs limited them to specific military applications.
Dynamic random-access memory
In 1964, Arnold Farber and Eugene Schlig, working for IBM, created a hard-wired memory cell, using a transistor gate and tunnel diode latch. They replaced the latch with two transistors and two resistors, a configuration that became known as the Farber-Schlig cell. In 1965, Benjamin Agusta and his team at IBM created a 16-bit silicon memory chip based on the Farber-Schlig cell, with 80 transistors, 64 resistors, and 4 diodes. In 1966, DRAM was invented by Dr. Robert Dennard at the IBM Thomas J. Watson Research Center. He was granted U.S. patent number 3,387,286 in 1968. Capacitors had been used for earlier memory schemes such as the drum of the Atanasoff–Berry Computer, the Williams tube and the Selectron tube.