Transistor
From November 17, 1947, to December 23, 1947, John Bardeen and Walter Brattain at AT&T's Bell Labs in Murray Hill, New Jersey of the United States performed experiments and observed that when two gold point contacts were applied to a crystal of germanium, a signal was produced with the output power greater than the input. Solid State Physics Group leader William Shockley saw the potential in this, and over the next few months worked to greatly expand the knowledge of semiconductors. The term "transistor" was coined by John R. Pierce as a contraction of the term "transresistance". According to Lillian Hoddeson and Vicki Daitch, authors of a biography of John Bardeen, Shockley had proposed that Bell Labs' first patent for a transistor should be based on the field-effect and that he be named as the inventor. Having unearthed Lilienfeld’s patents that went into obscurity years earlier, lawyers at Bell Labs advised against Shockley's proposal because the idea of a field-effect transistor that used an electric field as a "grid" was not new. Instead, what Bardeen, Brattain, and Shockley invented in 1947 was the first point-contact transistor. In acknowledgement of this accomplishment, Shockley, Bardeen, and Brattain were jointly awarded the 1956 Nobel Prize in Physics "for their researches on semiconductors and their discovery of the transistor effect".
Ian Munro Ross
In 1952 William Shockley hired him to work in semiconductors at Bell Labs, and he arrived in Murray Hill just after John Bardeen and Walter Houser Brattain had left. Shockley's group focused exclusively on transistor improvements, and Ross and G. C. Dacey were instrumental in the early stages of development of the field-effect transistor. In 1960 Ross and others invented epitaxy. He subsequently rose through managerial ranks, ultimately serving as the sixth President of Bell Labs 1979–1991 and overseeing its reorganization following the breakup of the Bell System.