History of hearing aids
The development of transistors in 1948 by Bell Laboratories led to major improvements to the hearing aid. The transistor was invented by John Bardeen, Walter Brattain, and William Shockley. Transistors were created to replace vacuum tubes; they were small, required less battery power and had less distortion and heat than their predecessor. These vacuum tubes were typically hot and fragile, so the transistor was the ideal replacement.The 1952 Sonotone 1010 used a transistor stage along with vacuum tubes, to extend battery life. The size of these transistors led to developments in miniature, carbon microphones. These microphones could be mounted on various items, even eyeglasses. In 1951, Raytheon manufactured the transistor and was one of the first companies to mass-produce transistors to throughout America. Raytheon realized that their hearing aid only lasted short-term and began to sell the vacuum-tube hearing aids again along with transistor hearing aids.
Organic field-effect transistor
The field-effect transistor (FET) was first proposed by J.E. Lilienfeld, who received a patent for his idea in 1930. He proposed that a field-effect transistor behaves as a capacitor with a conducting channel between a source and a drain electrode. Applied voltage on the gate electrode controls the amount of charge carriers flowing through the system.
The first field-effect transistor was designed and prepared in 1960 by Kahng and Atalla using a metal–oxide–semiconductor (MOSFET). However, rising costs of materials and manufacturing, as well as public interest in more environmentally friendly electronics materials have supported development of organic based electronics in more recent years. In 1987, Koezuka and co-workers reported the first organic field-effect transistor based on a polymer of thiophene molecules. The thiophene polymer is a type of conjugated polymer that is able to conduct charge, eliminating the need to use expensive metal oxide semiconductors. Additionally, other conjugated polymers have been shown to have semiconducting properties. OFET design has also improved in the past few decades. Many OFETs are now designed based on the thin-film transistor (TFT) model, which allows the devices to use less conductive materials in their design. Improvement on these models in the past few years have been made to field-effect mobility and on–off current ratios.