A mobility curve for electrons in a MOSFET inversion charge layer is determined from measured drain current of transistors produced by a wide range of MOS technologies. A comparison between this mobility curve and previously published results shows that a truly universal mobility curve does not exist and only local universal mobility curves can be expected, i.e. unique mobility curves which are valid over a finite range of MOS technologies and/or over a particular set of fabrication facilities. The curve's basic characteristic of being technology-independent over a wide range of process variation points out the potential of using such a local universal mobility curve as a powerful basis for developing predictive device modeling tools. This potential is demonstrated for an analytical MOSFET model and a two-dimensional device simulator where the mobility models have the general characteristics of experiment-based local universal mobility curves. >
['Shiuh-Wuu Lee']
Universality of mobility-gate field characteristics of electrons in the inversion charge layer and its application in MOSFET modeling