AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (111) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8mmx5mm, XRD GaN (0002) full-width at half-maximum (FWHM) of 661arcsec and surface roughness of 0.377nm. The device with a gate length of 1.4@mm and a gate width of 60@mm demonstrated maximum drain current density of 304mA/mm, transconductance of 124mS/mm and reverse gate leakage current of 0.76@mA/mm at the gate voltage of -10V.
['Weijun Luo', 'Xiaoliang Wang', 'Hongling Xiao', 'Cuimei Wang', 'Junxue Ran', 'Lunchun Guo', 'Jianping Li', 'Hong-Xin Liu', 'Yanling Chen', 'Fuhua Yang', 'Jinmin Li']
Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD