Forward and reverse HBM, MM, CDM ESD tests have been performed on 850-nm VCSELs, together with EOS and overpower test. The physical analysis of the tested devices showed a variety of damages not easily correlated to the measured electro-optical degradations. The solution requires the detailed interpretation of the observed physical mechanism, by means of electron microscopy and device modelling.
['Massimo Vanzi', 'Giovanna Mura', 'Giulia Marcello', 'K. Xiao']
ESD tests on 850 nm GaAs-based VCSELs