A novel sharp switching Z 2 -FET DGP device (Zero Impact Ionization and Zero Subthreshold Slope FET with Dual Ground Planes) relying on band modulation mechanism is presented in this paper. The device is fabricated in the most advanced FDSOI (Fully Depleted SOI) technology with Ultra-Thin Body and Buried Oxide (UTBB). The Z 2 -FET DGP is an upgraded version of Z 2 -FET. It features sharp on-switch, adjustable triggering voltage (Vt1), and wide hysteresis useful for 1T-DRAM memory.
['H. El Dirani', 'Pascal Fonteneau', 'Yohann Solaro', 'Philippe Ferrari', 'S. Cristoloveanu']
Novel FDSOI band-modulation device: Z 2 -FET with Dual Ground Planes