ESD protection design for CMOS RF integrated circuits is proposed in this paper by using the stacked polysilicon diodes as the input ESD protection devices to reduce the total input capacitance and to avoid the noise coupling from the common substrate. The ESD level of the stacked polysilicon diodes on the I/O pad is restored by using the turn-on efficient power-rail ESD clamp circuit, which is constructed by substrate-triggered technique. This polysilicon diode is fully process compatible to general sub-quarter-micron CMOS processes. 2002 Elsevier Science Ltd. All rights reserved.
['Ming-Dou Ker', 'Chyh-Yih Chang']
ESD protection design for CMOS RF integrated circuits using polysilicon diodes