In this report, a fully integrated 3-D cross-point ReRAM is demonstrated with minimized disturbance and sneak current effect. HfO X  memory cells stacked on threshold-type selector exhibit superb leakage current suppression than cells with exponential selector. Remaining leakage current is diagnosed and compensated by leakage compensating write driver. Cells are prevented from disturbance by lowering read voltage at hot temperature, which sacrifices read margin. The read margin is recovered by cell current amplifier in read circuit.
['Sangheon Lee', 'Jeonghwan Song', 'Changhyuk Seong', 'Jiyong Woo', 'Jong-Moon Choi', 'Soon-Chan Kwon', 'Ho-Joon Kim', 'Hyun-Suk Kang', 'Soo Gil Kim', 'Hoe Gwon Jung', 'Kee-Won Kwon', 'Hyunsang Hwang']
Full chip integration of 3-d cross-point ReRAM with leakage-compensating write driver and disturbance-aware sense amplifier