Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are recommended.
['Jize Jiang', 'Wei Shu', 'Kwen-Siong Chong', 'Tong Lin', 'Ne Kyaw Zwa Lwin', 'Joseph Sylvester Chang', 'Jingyuan Liu']
Total Ionizing Dose (TID) effects on finger transistors in a 65nm CMOS process