This paper presents a new Monte-Carlo methodology to investigate the transient effect occurrence in complementary metal oxide semiconductor (CMOS) logic circuits: TMC DASIE (transient Monte-Carlo detailed analysis of secondary ion effects). The production and effects of single-event transients inside CMOS combinational logic gates are examined. First results and perspectives are presented.
['Guillaume Hubert', 'Antonin Bougerol', 'Florent Miller', 'Nadine Buard', 'Lorena Anghel', 'Thierry Carriere', 'F. Wrobel', 'Rémi Gaillard']
Prediction of transient induced by neutron/proton in CMOS combinational logic cells