This paper investigates various important microwave characteristics of an independently biased 3-stack InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) chip at both small-signal and large-signal operation. By taking the advantage of the independently biased functionality, bias condition for individual transistor can be adjusted flexibly, resulting in the ability of independent control for both small-signal and large-signal performances. It was found that at small-signal operation stability and isolation characteristics of the proposed configuration can be significantly improved by controlling bias condition of the second-stage and the third-stage transistors while at large-signal operation its linearity and power gain can be improved through controlling the bias condition of the first-stage and the third-stage transistors. To demonstrate the benefits of using such an independently biased configuration, a measured optimum large-signal performance at an operation frequency of 1.6 GHz under an optimum bias condition for the high gain, low distortion were obtained as:    $\text {PAE} = 23.5\,\,\%$   ,    ${\text {P}}_{\text {out}}= 12$    dBm;    ${\text {Gain}}= 32.6$    dB at IMD3 = −35 dBc. Moreover, to demonstrate the superior advantage of the proposed configuration, its small-signal and large-signal performance were also compared to that of a single stage common-emitter, a conventional 2-stack, an independently biased 2-stack and a conventional 3-stack configuration. The compared results showed that the independently biased 3-stack is the best candidate among the configurations for various wireless communications applications.
['Manh Duy Luong', 'Ryo Ishikawa', 'Yoichiro Takayama', 'Kazuhiko Honjo']
Microwave Characteristics of an Independently Biased 3-Stack InGaP/GaAs HBT Configuration