In its standard formulation the drift-diffusion (DD) model frame cannot describe the influence of the ballistic resistance on the device characteristics. This results in considerable problems in calibrating the short channel behavior of advanced devices. In this paper, we propose a new formulation for the inclusion of the ballistic resistance into the DD model frame consisting in adding a simple ballistic mobility to the total high-field saturation mobility according to Matthiessen's rule. We develop an extraction methodology and extract the model parameters from Monte Carlo simulation (MC). This DD model is shown to reproduce MC saturation and linear drain currents as well as linear transconductance in InGaAs FDSOI and FinFET transistors for gate lengths from 100nm down to 13.5nm after additional inclusion of a contact resistance. This shows that non-equilibrium transport also occurs in the access regions requiring this additional correction of DD simulation.
['Axel Erlebach', 'Keunsam Lee', 'F. M. Bufler']
Empirical ballistic mobility model for drift-diffusion simulation