Memristors are labelled as a significant candidate of building a better storage structure, higher capacity and more efficient performance. Research shows that the density of a memristor array could be 100 times higher compared to the dynamic random-access memory, hence it is possible to build a storage structure with high density. Tracing back to the year 1971, Prof. Chua firstly proposed the memristor as the fourth circuit element and defined it as memory-resistor, it is a new emerged passive device with two terminals that have the ability to respond to the history or past memory of the current that passes within it. We hereby, propose comprehensive numerical models based window functions. When the parameters of the models are varied, various dynamic behaviours can be obtained and discussed.
['Wanlong Chen', 'Xiao Yang', 'Frank Zhigang Wang']
An Omnipotent Memristor Model with Controllable Window Functions