Image sensors for applications such as machine vision, in-vehicle cameras, and surveillance cameras require a global shutter (GS) function. GS functions are an increasingly powerful technology driver, not only for solving imaging problems caused by rolling shutter distortion or flash bands, but also for use in sensing applications [1]. Conventional CMOS image sensors (CIS) with GS functions require storage located near the photoelectric conversion area [2–3], and the two-stage transferring pixel structures required to suppress kT/C noise need two storage nodes and extra transistors. This makes it difficult, in GS pixels, to simultaneously shrink the pixel size and enlarge the saturation signal.
['Sanshiro Shishido', 'Yasuo Miyake', 'Yoshiaki Sato', 'Tokuhiko Tamaki', 'Naoki Shimasaki', 'Yoshihiro Sato', 'Masashi Murakami', 'Yasunori Inoue']
6.2 210ke− Saturation signal 3µm-pixel variable-sensitivity global-shutter organic photoconductive image sensor for motion capture