In this paper silicon-on-glass VDMOSFETs are electrothermally characterized for the first time. The silicon-on-glass transistors are compared with the corresponding bulk-silicon devices by means of electrical measurements of the thermal resistance, and numerical thermal simulations. Very large values of R/sub TH/ are measured on-wafer for each SOG VDMOSFET under test. Nevertheless, the simulations show that the electrothermal feedback is expected to be significantly reduced after the devices axe mounted on a thermally conducting PCB. They indicate that the surface mounted SOG VDMOSFETs should have at least as good thermal stability as a bulk-Si VDMOSFET with the wafer thickness of only 100 /spl mu/m.
['N. Nenadovic', 'H. Schellevis', 'V. Cuoco', 'A. Griffo', 'S.J.C.H. Theeuwen', 'L.K. Nanver', 'H.F.F. Jos', 'J.W. Slotboom']
Electrothermal characterization of silicon-on-glass VDMOSFETs