Carbon nanotube field effect transistor (CNFET) is one of the most promising emerging technologies, which can potentially outperform the conventional silicon technology with higher speed and lower power. However, most emerging technologies, including CNFETs, often face the challenge of lower device yield due to imperfect material processing. This paper studies the impact of imperfection of CNT substrates based on a recently developed CMOS-compatible self-assembly process on the CNFET CMOS circuit functionalities, and provide a methodology to estimate material and process requirements according to the circuit-level yield target.
['Kaship Sheikh', 'Shu-Jen Han', 'Lan Wei']
Impact of CNT process imperfection on circuit-level functionality and yield