In this work, we study the impact of Si and Al implantation on the current conduction mechanisms and operation of 1T-1R TiN/HfO 2 /Ti/TiN based ReRAM devices. The pre-forming current and forming voltage evolution clearly reveal different trends as a function of the implanted dose and species. We link our results to the microscopic structure of the material using a first principles approach.
['M. Barlas', 'B. Traore', 'Laurent Grenouillet', 'S. M. Bernasconi', 'Philippe Blaise', 'Mouhamad Alayan', 'B. Sklenard', 'E. Jalaguier', 'P. Rodriguez', 'F. Mazen', 'E. Vilain', 'M. Guillermet', 'S. Jeannot', 'E. Vianello', 'L. Perniola']
Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO 2 based OxRAM cells