A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output
['Stefan Shopov', 'Andreea Balteanu', 'Juergen Hasch', 'P. Chevalier', 'Andreia Cathelin', 'Sorin P. Voinigescu']
A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output