We report on the detection of CW sub-THz (300 GHz) radiation by High Electron Mobility Transistor (HEMT). The observed photo-response are measured against gate voltage. The measured response is a superposition of a generally increasing response with a decrease in V GS  coupled with a small peak approximately at threshold. The response has also been measured as a function of frequency and there is evidence that the response against V GS  characteristic does depend on frequency.
['Mohd Azlishah Othman', 'I. Harrison']
Continuous wave (CW) sub-Terahertz (sub-THz) detection by Plasma Wave in High Electron Mobility Transistor (HEMT)