The structural and electrical characteristics of Metal-Pb(Zr 0.53 Ti 0.47 )O 3  (PZT)-TiO 2 -Si structures with TiO 2  insulating layer deposited by metal organic chemical vapor deposition (MOCVD) method were investigated. The dependence of the electrical performances such as memory window (MW) and leakage current density on the thickness of the insulator layer and electrode material was studied. Highly preferred &#60;110> orientation PZT thin film was obtained on the well crystallized TiO 2  insulator layer. For the Pt/PZT/TiO 2  (190nm)/Si structure working in the charge injection mode, a memory window of 0.5V and 2.2V, and a leakage current density of 3.38×10 −7 A/cm 2 , 6.21×10 −7 A/cm 2  were obtained under a sweeping voltage of 5V and 7V, respectively. The memory characteristics suggest the possibility for next generation nonvolatile memory applications.
['Changjian Zhou', 'Pinggang Peng', 'Yi Yang', 'Tian-Ling Ren']
Characteristics of Metal-Pb(Zr 0.53 Ti 0.47 )O 3 -TiO 2 -Si capacitor for nonvolatile memory applications