In this work, we are the first to consider the optimization of sub-threshold stand-by  V   DD   while simultaneously considering memory yield and redundant row/column usage. We propose a fast, optimal fault-repair analysis framework that is 200--600% faster than previous works and show that leakage can be reduced 10--14% using redundancy without sacrificing yield.
['Seokjoong Kim', 'Matthew R. Guthaus']
Leakage-aware redundancy for reliable sub-threshold memories