The method of the capacitive coupled transmission line pulsing (CC-TLP) is applied to a product IC at package level and for the first time at wafer level. The investigated product showed a field failure which could be reproduced by the CDM. The application of the CC-TLP to the product at package and wafer level also reproduced the field failure. Furthermore the measured failure currents correlate very well with the failure currents under CDM conditions.
['Heinrich Wolf', 'H. Gieser', 'Dirk Walter']
Investigating the CDM susceptibility of IC's at package and wafer level by capacitive coupled TLP.