In order to determine the device electrostatics, the Poisson equation is solved (using the Newton–Raphson numerical technique) on a tridimensional domain including the device. We consider Neumann conditions (corresponding to constant—and in particular zero—electric field) at the boundaries of the solution domain, and Dirichlet conditions (constant potential) at the gates. In particular, the Poisson equation (2)∇[ϵ(r→)∇ϕ(r→)]=−e[p(r→)−n(r→)]−ρfix(r→) is solved over a rectilinear grid defined over the tridimensional domain. In this equation, ϵ is the dielectric constant, ϕ is the electrostatic potential, e is the elementary charge, p and n are the electron and hole concentrations, ρfix is the density of fixed charge, and r→ is the position vector.