Transistor-type organic memory devices (TOMDs) have attracted keen interest because of their potentials toward flexible or bendable plastic memory modules12345. TOMDs are effective in terms of module (array) configuration because they have both memory and driving (switching) elements in single device, whereas additional transistor circuits are necessary for driving array modules in the case of resistor-type organic memory devices (ROMDs)678. To date, various organic materials and structures, such as ferroelectric polymers, charge-trapping polymers, polymeric layers with metal nanoparticles and polymer energy well structures, have been employed for TOMDs, but they could not deliver both low-voltage operation and high stability at the same time91011121314151617181920. Very recently, encouraging data retention characteristics at room temperature have been reported for TOMDs with poly(vinyl alcohol) memory gate-insulating layers2122.