The control of vacancy state behavior in compounds with multiple valance states represents great promise for the malleability of multifunctional oxide thin films, but more investigation is still required to establish and understand the underlying mechanisms. Here, we report on the effect of various processing parameters on the oxygen content of SFO thin films and correlate oxygen content to the transport and dielectric properties. Studying the effect of oxygen vacancies in compounds with multiple valance states such as SFO provides an avenue to better understand the relationship between lattice, charge and structure. We propose that the metastable oxygen deficient states of SFO thin films offer an opportunity to accomplish highly tunable electronic properties applicable to a wide range of technological applications that leverage the variability in structural, magnetic and electrical properties of SFO.