The SU-8 3010 microstructures were fabricated on a cleaned 100 mm silicon wafer. After dehydration baking at 200 °C for 5 minutes, photoresist SU-8 3010 was spread onto the wafer at 1500 to 1800 rpm for 30 seconds to create a thickness of 11 µm to 15 µm, as measured using a profilometer (Alpha step 200). The wafer was then soft baked at 95 °C for 4 minutes before being exposed to UV light in a mask aligner with uniform exposure for 40 seconds. The exposed wafer was given a post exposure bake at 65 °C for 1 minute, 95 °C for 3 minutes and then 65 °C for 1 minute. Finally, the wafer was developed using SU-8 developer (MicroChem). The geometry of the SU-8 3010 photoresist was stabilized by further baking with ramped temperature at the acceleration of 100 °C hour−1 from 40 °C to 200 °C, held at 200 °C for one hour, and then gradually cooled to 40 °C.