The trends described above hold in general for both total pressures of 2*10−2 mbar and 1*10−1 mbar. However, differences where observed in the optimal pO2, crystallization times, the obtained crystalline quality and the limiting pO2 at which epitaxial growth was not possible anymore. Some aspects of the growth process were similar for both total pressures. The silicon oxide thicknesses at the start of YSZ growth were similar, since the increase in thickness depends on the pO2 only. For the same reason, the fluxes of oxygen from the ambient to the growing film were similar. Finally, the flux of YSZ per second was kept constant by using a slightly lower laser repetition rate in the 1*10−1 mbar case (12.5 Hz in stead of 14 Hz). Therefore, the differences in growth behavior can only be explained by differences in the behavior of the plasma.