SFO thin films with a thickness of 75 nm were deposited by PLD on Nb-doped (0.7% wt) STO (001) substrates (Nb:STO) at 800 °C in three different post-growth annealing conditions. O2 and vacuum anneals were performed by holding the films at 600 °C for 1 hour in O2 of 500 Torr and <10−6 Torr, respectively. The films were then cooled down to room temperature at 5 °C/min at the same oxygen pressure. SFO with no anneal was also investigated, in which the heater was promptly shut off after deposition and films cooled freely in the growth pressure (250 mTorr O2) environment.