The thickness of films was measured using a surface profiler (Alpha Step 200, Tencor). An ultraviolet-visible absorption spectrometer (Optizen 2120UV, Mecasys) was used for the measurement of optical absorption spectra of films. The cross-sections of hybrid memory transistors were examined with a field-emission scanning electron microscope (FESEM, S-4800, Hitachi), while an optical microscope (SV-55, Sometech) was used to inspect the surface of hybrid films and the top part of devices. The memory transistor charateristics of devices were measured using a semiconductor parameter analyzers (Keithley 4200, Keithley 2636B, Keithley Instruments Inc.), which are connected to a sample holder system with heating units inside a glove-box probe station (PS-CPSN2, Modu-Systems). The XPS spectra of hybrid films were measured with a X-Ray photoelectron spectrometer (ESCALAB 250, Thermo Scientific, Inc.), while a Fourier transform-infrared spectrometer (FT-IR, 5700 Continum, Thermo Scientific, Inc.) with the attenuated total reflection (ATR) mode was used for the measurement of functional groups in the hybrid film samples. The nanostructure of hybrid films was measured using a synchrotron radiation grazing incidence angle X-ray diffraction system (GIXD, wavelength = 1.212969 Å, Pohang Accelerator Laboratory).