To understand the oxygen vacancies’ effect on electrical properties, the current conduction mechanisms with applied field in the range of 0–66.6 MV/m were analyzed by fitting to both bulk and interface-mediated emission models. Mathematical fitting functions were applied to the I-V curves in regions of applied field above which the majority of hysteresis was observed, since fitting in these regions must also account for the high density of oxygen migration. One possible mechanism of conduction that considers the injection of charge carriers from a metal into nearby oxygen vacancy sites as traps, with an associated barrier height that governs bulk conduction in a solid, is the trap-assisted tunneling current model:33