SFO thin films were grown by PLD using a KrF excimer laser (Lambda Physik LPX 300, λ = 248 nm, 2 Hz). The laser beam, defined by the image beam method44, was focused onto the target with an energy density of 1.87 J/cm2 . Prior to the deposition, the chamber was pumped down to a base pressure of 1 × 10−6 Torr. A substrate temperature of 800 °C and an oxygen pressure of 250 mTorr were maintained during all depositions. After deposition, various anneal treatments were used to modify the oxygen content in the SFO thin films. An O2 anneal was used with an oxygen pressure of 500 Torr and the films were held at 600 °C for 1 hour to allow more oxygen to enter the thin film. The films were then cooled down to room temperature at 5 °C/min. A vacuum anneal was performed by maintaining films in a pressure environment of < 10−6 Torr, held at 600 °C followed by cooling to room temperature at 5 °C/min. Samples were also grown with no anneal, in which the heater was promptly shut off after deposition and films cooled freely in the growth pressure (250 mTorr O2) environment.