Figure 3a shows a typical example of the change of the positions of the Si and YSZ streaks with increasing deposition time. No change in the distance between the YSZ streaks was observed above 2 nm, even after growth of additional 100 nm in oxygen atmosphere. The distance between the YSZ streaks was larger compared to Si, indicating a smaller lattice, as expected. Below 2 nm, the YSZ streak positions were closer to the Si streak positions. Although this may indicate that YSZ was initially strained to the silicon, the shift can be caused by overlap with the Si streaks, which were still weakly present at the starting point of YSZ crystallization. Similar fast lattice relaxation during growth was observed for all films.