In order to better analyze our numerical results, Figure 6a reports the behavior of the current as a function of the length L for the four values of the voltage VGS identified with vertical lines in Figure 4. In Figure 6b, we show the corresponding values of the channel resistance R=VDS/ID as a function of the length L. When the device is in its OFF state, the resistance R increases exponentially with the length L, thus suggesting that the device is working in a strong localization transport regime. Instead, when moving towards the ON regime, the resistance dependence on the channel length becomes linear. The transport in the ON state is therefore diffusive. Only when further increasing the channel length, the transport regime in the ON state is expected to become localized, with an exponential suppression of the current on a length scale much larger than that in the OFF state. In further detail, let us assume the behaviors for VGS=−0.075 V and VGS=0.75 V (where, approximately, the minimum and the maximum current regimes are reached in all cases) as representative of the OFF state and of the ON state, respectively. Then, a good fit of the dependence of the device resistance as a function of the channel length is given by the relations (8)ROFF=11.5KΩ×expL15.4nm in the OFF regime, and (9)RON=7.8KΩ+0.615KΩnmL in the ON regime. Since R=VDS/IDS and VDS is the same in the two regimes, the ION/IOFF ratio should be reasonably fitted by the relation:(10)IONIOFF=ROFFRON=1.474×expL15.4nm1+L12.683nm.