We investigated 3.81-nm-wide ribbons with a 0.6% boron concentration (i.e., the highest percentage studied in the case of the 20-nm-long ribbon). We considered ribbons with lengths 10, 20, 30, 40, 50, 60, and 70 nm. For each length, we analyzed several different realizations of the boron dopant spatial distribution (20, 23, 24, 19, 18, 9, and 9 distribution realizations, respectively, for the seven considered lengths). In Figure 3, for each of the seven ribbon lengths, we report the sets of characteristics obtained for the different doping realizations (the dispersion of these curves is due to the low number of dopants). With a thicker line, we also plot the mean behavior achieved averaging, for each VGS, the current obtained for the different boron distributions. These average behaviors are directly compared in Figure 4. In Figure 5, the black dots represent the values of the ION/IOFF ratio (obtained from these seven curves dividing the values of ID in the regions of high and low conduction) as a function of the ribbon length.