However, the values of the ION/IOFF ratio obtained with the 20-nm-long ribbon are still largely insufficient for a well-operating digital transistor. Indeed, a device with good switching properties should be characterized by a current flow in the OFF state much smaller than in the ON state. From this point of view, the adoption of longer doped graphene ribbons could improve the device behavior, due to the combined effect of a larger number of dopants. Therefore, our present analysis has focused on the dependence of the transport behavior on the length L of the boron-doped ribbon.