In this work, the growth of vapor deposited films of EPI and the solution of an elusive crystal is described; the impact of substrate temperature during deposition on film structure and morphology is also discussed. The results show the potential for a combination of X-ray diffraction and MD simulations to be used for crystal structure solution from thin films, when even only a very small number of diffraction peaks are observed. The importance of substrate temperature during deposition is highlighted by the observed differences in film structure and molecular orientation on the substrate. Film structure is then linked to the performance of transistors produced from films deposited in a similar manner.