Indium-tin oxide (ITO)-coated glass substrates (sheet resistance = 10 Ω/cm2) were subject to a photolithography process to make the ITO patterns with a 1 × 12 mm stripe for gate (G) electrodes. After cleaning the patterned ITO-glass susbtrates in an ultrasonic bath with acetone and isopropyl alcohol (30 min), the clenaed ITO-glass substrates were treated with UV-ozone (28 mW/cm2 for 20 min) by utilizing UV-ozone cleaner (UVO cleaner, Ahtech LTS Co., Ltd) in order to remove any organic contaminants remained. Next, the VTES-PVP precursor films were spin-coated on the ITO-glass substrates, followed by thermal curing processes at 250 °C for 6 h leading to chemically cross-linked hybrid (X-ASiO-PVPNP) films (thickness = 700 nm). On top of the X-ASiO-PVPNP layers, the P3HT channel layers (thickness = 60 nm) were spin-coated at 1500 rpm for 30 s by using the P3HT solutions, which were prepared by dissolving the P3HT polymer (weight-average molecular weight = 70 kDa, polydispersity index = 1.8, regioregularity = 96%, Rieke Metals) in toluene at a solid concentration of 13 mg/ml. The spin-coated P3HT channel layers were soft-baked at 70 °C for 15 min and transferred to a vacuum chamber installed inside a nitrogen-filled glove box system. Finally, the source (S) and drain (D) electrodes were formed by successively depositing nickel (Ni, thickness = 15 nm) and aluminum (Al, thickness = 60 nm) electrodes on the P3HT layers through a shadow mask. The channel length and width of devices were 70 μm and 2 mm, respectively (see Fig. 1d). The fabricated devices were encapsulated by the cross-linked poly(dimethyl siloxane) (PDMS) layers (Sylgard 184, 10 g clip-pack, Sigma-Aldrich Co., St Louis, Mo, USA, thickness = 450 nm), which were cured at room temperature. We note that the X-ASiO-PVPNP films were prepared on quartz substrates for the measurement of optical absorption spectra but indium-tin oxide (ITO)-coated glass substrates were used for other measurements including XPS spectra, FT-IR spectra and GIXD images.