This model also takes into account mediation of leakage current by defects such as oxygen vacancies, which makes it a useful tool to analyze the behavior in SFO thin films34363738. Fitting of the data yields a good linear fit of ln(J/T2) vs. for the vacuum annealed SFO thin film, as can be seen in the inset of Fig. 2f. An optical dielectric constant of 3.74 was extracted from the slope of the linear fitting curve. There are limited data on the optical dielectric constant of SFO, but similar studies on SrCoOx thin films suggest that this value is within reason39. Although the results suggest that the leakage current behavior in the vacuum annealed SFO thin film is well-explained by the Schottky equation, the SFO samples without annealing and annealed in O2 do not yield a linear trend of the ln(J/T2) vs. data. Dielectric properties for all SFO films at 100 kHz are compared in Table 1. We can use these data to infer that as the oxygen content in SFO varies, not only the structure but also the nature of the conduction mechanisms in the film undergoes a notable change. Further understanding of the conduction mechanisms is critical to improving and tailoring SFO thin films for specific applications.