First, differences can be caused by the different kinetic regimes of the plasma. At 2*10−2 mbar, the velocity of the plasma arriving at the substrate was much higher compared to 1*10−1 mbar. High energetic particles may assist in breaking of silicon-oxygen bonds within the native oxide layer. Secondly, differences can be caused by the plasma chemistry. A higher degree of oxidation is expected at 1*10−1 mbar, since the plasma is thermalized23. Furthermore, the interaction between the plasma and background gas is expected to be increased at 1*10−1 mbar, because of the diffusion like propagation. Surprisingly, the pO2 at which plasma oxidation started was in the same order of magnitude for both total pressures. This observation is however in agreement with the observations made on plasmas ablated from an YBiO3 target38. In that case, oxidation of Y was observed quickly after ablation because of reaction with oxygen ablated from the target. At lower pO2, the pressure dependent degree of oxidation was explained by a pressure dependent oxygen nonstoichiometry of the target. If this mechanism is true, the degree of oxidation is indeed expected to be comparable in both total pressures. At low pO2, the interaction of the plasma with oxygen from the background is low in both total pressures. Therefore, the oxidation of the plasma is dominated by the oxygen present in the target, which depends only on the pO2. The plasma chemistry can however still be responsible for observed differences in growth behavior due to different arrival times. In the 2*10−2 mbar case, the plasma just started to oxidize when arriving at the substrate, while the amount of oxidation was higher in the 1*10−1 mbar case due to the increased arrival time. Therefore, the average amount of oxidized species arriving at the substrate was lower at 2*10−2 mbar compared to 1*10−1 mbar.