The used pressures during growth with PLD vary from base pressure (often in the 10−7 mbar range) to 10−4 mbar O2. Crystallization of YSZ on the silicon crystal lattice is typically observed after deposition of about 1 nm6,9. In the second step, after deposition of about 5 nm, more oxygen is added to fully oxidize the film during the remainder of the growth. Control of the chemistry during the first step seems to be critical for the crystalline quality of the resulting film. Deposition of too large amounts of YSZ in reducing conditions leads to formation of silicides, which increases the amount of defects in the YSZ film20. Furthermore, the presence of residual native oxide may aid the crystallization of YSZ by avoiding the large lattice mismatch between Si and YSZ (5.7%), either via lateral overgrowth20 or via crystallization on the crystalline part of the native oxide, which may be situated close to the silicon surface with lattice parameters closer to YSZ18,21.