There are several methods used to extract the Schottky barrier height, , in the Schottky thermionic emission model, but one of the most widely used is to compare the conduction behavior against variation in temperature3840. Investigation of the electronic properties of SFO thin film annealed in vacuum was therefore conducted in the temperature range of 120 K–300 K. Results for the temperature dependence of permittivity, dielectric loss and leakage current are shown in Fig. 3.