Hence the 10 mol.% PVP devices, which were encapsulated with the cross-linked PDMS layers, were used for the measurement of retention characteristics and high temperature operations. As shown in Fig. 6d (left), the encapsulated devices exhibited very stable retention characteristics up to 5000 WRER cycles. The deviation of reading-1 (R1) current was only 4.3% after 5000 cycles, while that of reading-2 (R2) after erasing was 15.5% compared to the initial value. Next, the encapsulated devices were loaded on a hot stage in order to examine the retention characteristics at 150 °C. As shown in Fig. 6d (right), the drain current deviation after 4750 cycles at 150 °C was 1.5% and 44% for reading-1 (R1) and reading-2 (R2), respectively. Here we note that the drain current level at 150 °C was slightly changed from that at room temperature, which can be attributable to the thermal effect on charge transport (mobility) as well as the different contact environment between the Al electrodes and the probes in the measurement system. Here it is also worthy to note that the P3HT channel layers are also strong enough to withstand the thermal shock at 150 °C because the present P3HT polymers with high regioregularity (96%) possess relatively high glass transition temperatures, close to but lower than the melting points (210~240 °C), due to the very small portion of amorphous (regiorandom) parts (4%)495051. In contrast to the outstanding retention characteristics of the encapsulated devices at such high temperature (150 °C), a catastrophic current fluctuation was measured for the bare devices at 150 °C and even at room temperature (see Fig. S6). It is also worthy to note that the pristine PVP devices (PVP = 100 mol.%) exhibited much poorer hysteresis at 150 °C than room temperature, indicative of an impossible state for memory operation (see Fig. S7). Hence this result implies that the present encapsulated devices with the X-ASiO-PVPNP layers (PVP = 10 mol.%), hybrid TOMDs, can be used as a durable memory device for high temperature applications such as security camera built in car, control systems for fire-fighters and steel mill industries, rescue robots for nuclear power stations, memory systems for space shuttles, etc.