Equation (10) allows us to extrapolate some considerations for longer ribbons, for which a complete numerical treatment would be too computationally challenging. Indeed, following Equation (10), further increasing the channel length L should lead to a nearly-exponential enhancement of the ION/IOFF ratio. Therefore, the adoption of longer graphene ribbons with a sufficiently high boron doping concentration could be usefully exploited in order to achieve graphene-based devices with an improved switching behavior and asymmetric electron–hole transport characteristics.