Monolayer graphene and MoS2 were grown on a Cu foil and a SiO2/Si wafer, respectively, by the low pressure chemical vapor deposition and the metalorganic chemical vapor deposition (MOCVD). The Cu foils (16 × 8 cm2) were inserted in a circular quartz tube and thermally annealed up to 1000 °C in the presence of H2 gas (8 sccm) at 80 mTorr for 2 h. The chamber was then injected with CH4 precursor gas (20 sccm) at 1.6 Torr for 1 h. Subsequently, the quartz tube (heated zone) was allowed to naturally cool at an initially rapid rate, before being gradually raised to room temperature in the presence of H2 gas (8 sccm) at 80 mTorr. Chemical precursors to Mo and S for growth of MoS2 were molybdenum hexacarbonyl (MHC) and dimethyl sulfide (DMS), respectively. The gas phase MHC (0.5 sccm) and DMS (1 sccm) were inserted into the MOCVD quartz tube along with H2 (10 sccm) and Ar (300 sccm), and the tube was heated to 550 °C at 7.5 Torr for 20 h. Raman and photoluminescence (PL) results from MoS2 and graphene are shown in Supplementary Figs. 24 and 25, respectively. The results confirm that MoS2 is monolayer and graphene is double-layer.