Our TFT devices made from a zinc-rich IZTO channel layer demonstrated excellent performance with a field effect mobility value of 34 cm2/Vs, which is higher than the values reported by other research groups . It is also noticed that interface defect concentration (NT) value, which was estimated from SS value, was reduced with increasing annealing temperature. It is obvious the mobility of charge carriers would then be improved as electrons travel from source to drain through the a-IZTO channel layer .