Interconnect design and photoinduced response of MoS2 photodetectors on a 3D hemispherical structure. a FEA of the 3D hemisphere structures before and after compressive buckling, showing the distributions of maximum principal strains in the MoS2 photodetectors and 3D interconnects. b Colorized SEM image of MoS2 photodetectors consisting of MoS2 (green), graphene (light gray), and SU-8 (gray) on the hemisphere with 3D interconnects. c Magnified view of the SEM image in b and corresponding FEA results for the strain distribution. Inset: schematic illustration of the unit device enclosed by the red box in the main image. d I–V characteristics of the 3D photodetector at different bias voltages (laser-beam wavelength = 532 nm, power density = 1000 W m−2). e Photoresponsivity of the MoS2 photodetector at a bias voltage of 3 V for different laser power densities. (Standard deviation of 48 sampling distribution recorded from 48 devices.) f Time-resolved photoresponses of the devices under laser illumination at different power densities. g Variation in photocurrent during repeated buckling processes for the octagonal prism (top), octagonal prismoid (middle), and hemispherical structure (bottom)