Zinc-rich IZTO ceramic target with the metal ratio of In:Zn:Sn = 40:50:10 at % was prepared using the conventional mixed-oxide process. IZTO thin films were then sputter-deposited onto 15 mm × 15 mm-square commercial glass in order to observe the transparency and morphology of the films. Top-contact bottom-gate TFTs were fabricated where an IZTO active layer was deposited onto n++ heavily-doped silicon wafer with 200 nm-thick SiO2 gate insulating layer. Deposition of IZTO films was conducted using RF magnetron sputtering at room temperature with RF power of 125 W and working pressure of 5 × 10−3 Torr. Prior to deposition, the vacuum chamber was evacuated to a base pressure of 2 × 10−5 Torr or below. The deposition time was kept for 3 min to obtain the channel layer thickness of around 50 nm. During deposition, oxygen acted as ambient gas where O2:Ar ratio was 5%:95% while the gas flow rate was fixed at 20 sccm. After deposition, the films were annealed at temperature in the range of 150–350 °C for 30 min in air inside of the tube furnace. Titanium and copper bilayer metallic films were subsequently deposited as source and drain contacts using an e-beam evaporator through shadow mask with width and length dimensions of 350 μm and 150 μm, respectively. The structural and surface topography were characterized and confirmed by X-ray diffraction (XRD, Rigaku D-500) and atomic force microscopy (AFM, Nanoscope IIIA). The X-ray photoelectron spectroscopy (XPS) study was performed using an XPS system (Thermo Fisher Scientific K-Alpha, Waltham, MA, USA) with monochromated Al Kα X-ray source (hν = 1486.6 eV) at a spot size of 400 μm in diameter with charge compensation. Survey spectra were obtained at pass energy of 200 eV and a resolution of 1 eV, and high-resolution spectra were acquired at pass energy of 30 eV and a resolution of 0.1 eV. All of the obtained binding energies (BEs) were compensated with that of adventitious carbon (C 1s) core level peak at 284.6 eV as a reference . The Avantage software provided by the manufacturer was used for controlling the spectrometer, analyzing the spectra, and the deconvolution of O 1s core level spectra.