This model has been added to a version of the Saber simulation software. The failure mechanisms of IGBTs includes overstress (O) and wearout(wo) separately. The wearout failures mainly include bias temperature instability (BTI), hot carrier injection (HCI), time-dependent dielectric breakdown (TDDB), electromigration (ECM), solder fatigue, material reconstruction, corrosion. The overstress failure mainly include electrostatic discharge (ESD), latch-up, avalanche, secondary breakdown, wire-bond liftoff and burnout.