Silicon controlled rectifier  A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey and Holonyak of Bell Laboratories in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M. Mackintosh of Bell Laboratories in January 1958. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The SCR was developed by a team of power engineers led by Gordon Hall and commercialized by Frank W. "Bill" Gutzwiller in 1957. Some sources define silicon-controlled rectifiers and thyristors as synonymous, other sources define silicon-controlled rectifiers as a proper subset of the set of thyristors, those being devices with at least four layers of alternating n- and p-type material. According to Bill Gutzwiller, the terms "SCR" and "controlled rectifier" were earlier, and "thyristor" was applied later, as usage of the device spread internationally. SCRs are unidirectional devices (i.e. can conduct current only in one direction) as opposed to TRIACs, which are bidirectional (i.e. charge carriers can flow through them in either direction). SCRs can be triggered normally only by currents going into the gate as opposed to TRIACs, which can be triggered normally by either a positive or a negative current applied to its gate electrode. There are three modes of operation for an SCR depending upon the biasing given to it:  In this mode of operation, the anode (+) is given a positive voltage while the cathode (−) is given a negative voltage, keeping the gate at zero (0) potential i.e. disconnected. In this case junction J1 and J3 are forward-biased, while J2 is reverse-biased, allowing only a small leakage current from the anode to the cathode. When the applied voltage reaches the breakover value for J2,and J2 undergoes avalanche breakdown. At this breakover voltage J2 starts conducting, but below breakover voltage J2 offers very high resistance to the current and the SCR is said to be in the off state. An SCR can be brought from blocking mode to conduction mode in two ways: Either by increasing the voltage between anode and cathode beyond the breakover voltage, or by applying a positive pulse at the gate.