<https://szphoton.com/blogs/glass-core-substrate/reliability-assessment-of-thermocompressed-epoxy-molding-compound-through-glass-via-interposer-architecture-by-the-submodeling-simulation-approach#article>
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"Citation\nWang, S.-H.; Hsu, W.; Liou, Y.-Y.; Huang, P.-C.; Lee, C.-C. Reliability Assessment of Thermocompressed Epoxy Molding Compound through Glass via Interposer Architecture by the Submodeling Simulation Approach. Materials 2022, 15, 7357. https://doi.org/10.3390/ma15207357 \nKeywords\n\nTGV\nThermocompression\nFinite Element Analysis\nSubmodeling Technique\nGlass Interposer\nChemical Shrinkage\nCTE Mismatch\nStress Assessment\nSi Chi \n\nBrief\nThis source discusses how thermocompression processes affect glass interposer architecture. \nSummary\nThis article investigates the mechanical reliability of Through Glass Via (TGV) interposer architecture under thermocompression, a crucial process in electronics packaging. The study, published in the journal Materials in 2022, focuses on the stress generated on the glass interposer and Si chip during this process.\nHere are the key findings of the article:\n\n\nSubmodeling Technique: The researchers employed a submodeling technique to simulate the thermocompression process, addressing the challenge of modeling complex structures with significant size differences. This approach involves creating a global model of the entire interposer and a local, detailed model of the critical TGV region. The displacement field from the global model is then applied to the local model for accurate stress analysis.\n\nImpact of CTE Mismatch: The study highlights the significant role of Coefficient of Thermal Expansion (CTE) mismatch between different materials in the interposer structure, such as the Si chip, Cu trace, and glass interposer. This mismatch, particularly during the 130 °C curing process, was identified as the primary source of stress on the glass interposer, reaching up to 121 MPa.\n\nEffect of EMC Shrinkage: While the chemical shrinkage of the Epoxy Molding Compound (EMC) used in the process did not significantly impact the stress on the glass interposer, it had a direct impact on the Si chip. The stress on the Si chip was found to be proportional to the degree of EMC shrinkage.\n\nCritical Stress Locations: The analysis identified the outer corner of the chip and the inner corner of the Si chip as the critical stress locations. The study suggests that the stress on the glass interposer is primarily governed by CTE mismatch, while the stress on the Si chip is influenced by EMC shrinkage.\n\nThe findings of this study provide valuable insights for enhancing the reliability of TGV interposer technology in electronic packaging. \nOrigin: https://www.semanticscholar.org/reader/85915352f762d0ead3af6c34eead8ba63e0b65f2"
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