title: ELECTRON SYNTHESIS IS A METHOD FOR THE FORMATION OF LAYERS IN MIGRATIONS
text: Namangan Institute of Engineering and Technology
  nammti.uz
  10.25.2023
  Pg.206
  during ion synthesis can occur as a result of the interaction of implanted atoms with target atoms
  or as a result of their interaction with each other. The use of ion-electron synthesis to create
  structures based on silicon has undoubted advantages over other methods, since this method is
  compatible with existing silicon technology.
  Keywords. Regularities in the formation of the spatial distribution of nitrogen atoms, defect
  formation, investigation of silicon under high-temperature conditions, mechanism of nucleation and
  growth of the silicon nitride phase, thermionic synthesis of silicon, thin silicon upon implantation of
  large doses of hydrogen ions.
  Introduction. The formation of a new phase in electron and ion synthesis can occur as a result
  of the interaction of implanted atoms with target atoms or their interaction with each other. The
  use of electrons under the influence of temperature to create structures based on silicon has clear
  advantages over other methods, since this method is compatible with existing silicon technology.