title: Namangan Institute of Engineering and Technology
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  Namangan Institute of Engineering and Technology Pdf ko'rish
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  Bog'liq ТўпламNamangan Institute of Engineering and Technology
  nammti.uz
  10.25.2023
  Pg.182
  Conclusion. The synthesis and application of nanostructured materials represent a significant
  leap forward in nuclear physics. Their unique properties offer solutions to critical challenges in the
  field, from enhancing reactor efficiency to improving safety measures. As research continues to
  advance, the potential of these materials in transforming nuclear technology is vast, with
  implications for energy, healthcare, and environmental protection.
  Literature
  1.
  Johnson, M. et al. (2022). "Advanced Synthesis Techniques for Nanostructured Materials
  in Nuclear Applications". Journal of Nanotechnology in Nuclear Physics.
  2.
  Ahmed, S., and Kumar, R. (2023). "Nanostructured Materials: Enhancing the Efficiency
  and Safety of Nuclear Reactors". Nuclear Energy and Technology Review.
  3.
  Smith, J., and Zhao, L. (2024). "Developments in Nanostructured Materials for Radiation
  Shielding". Radiation Protection Quarterly.
  4.
  Lee, H., and Gonzalez, R. (2021). "Nanostructured Materials in Radiation Detection: A New
  Era of Sensitivity and Accuracy". Journal of Nuclear Instrumentation.
  CDS/SI(P) GETEROSTRUKTURALI YARIMO`TKAZGICHLARNING SIRT HOLATLAR ZICHLIGIGA
  MAGNIT MAYDONINI TA’SIRINI MODELLASHTIRSH
  U.I.Erkaboyev, M.G’.Dadamirzayev
  Namangan muhandislik- texnologiya instituti
  Tel: 994367755 e-mail:
  muzaffardadamir81@gmail.com
  Annotasiya: CdS/Si(p) geterostrukturali yarimo`tkazgichning sirt holatlar zuchligini magnit
  maydon va haroratga bog’liqligini aniqlashlovchi matematik model taqdim etilgan.
  Kalit so'zlar: geterostruktura, fotoelektrik o'zgartirgich, chuqur sathlar, sig'im-kuchlanish
  xususiyatlari, sirt holatlari.
  Ma’lumki fotoelektrik o`zgartirgichlar sifatida keng qo`llaniladigan CdS/Si(p) geterostrukturali
  yarimo`tkazgichning elektr, optik va magnit hossalarini o`rganish dolzarb muammolardan biri
  hisoblanadi. Jumladan CdS/Si(p) ni geterochegarasida nuqsonlarning hosil bo`lishi, ushbu
  yarimo`tkazgichli materiallarning elektr xususiyatlariga salbiy ta’sir qilsa, chuqur energetik
  sathlardagi sirt holatlar zichligi esa geterostrukturani fotoelektrik samaradorligini yomonlashishiga
  olib keladi.
  Bugungi kunda, sirt holatlar zichligini o`lchash, uni tashqi omillarga bog`liqligini aniqlash
  bo`yicha bir qator tadqiqotlar olib borilgan. Xususan, [1,2] ishlarda yarimo`tkazgichli strukturalarda
  sirt holatlar zichligini Volt-Farad usuli yordamida aniqlangan. Bunda sirt holatlarning zaryadi
  qo`llaniladigan doimiy siljish kuchlanishiga bog`liq bo`lgan holatlar uchun sig`im-kuchlanish
  xususiyatlarining chastotaga bog`liqligidan yarimo`tkazgichlarda sirt holatlarning zichligini hisoblash
  usuli taklif etilgan [3,4].
  Lekin bu ishlarda yarimo`tkazgich-dielektrik chegarasidagi sirt holatlar zichligiga magnit
  maydon ta’siri ko`rilmagan. Sirt holatlarni magnit maydon va haroratga bog’liqligini aniqlash
  bo`yicha mukammal matematik model ishlab chiqilmagan.
  Ishning asosiy maqsadi CdS/Si(p) geterostrukturali yarimo`tkazgichning sirt holatlar zuchligini
  magnit maydonga bog`liqligini modellashtirishdan iborat.
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