title: Namangan Institute of Engineering and Technology
text: |
  Namangan Institute of Engineering and Technology Pdf ko'rish
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  Bog'liq ТўпламNamangan Institute of Engineering and Technology
  nammti.uz
  10.25.2023
  Pg.207
  nucleation of the silicon nitride phase in single-crystal silicon are studied in detail. The conditions
  for high-temperature ion implantation were met. The mechanism of nucleation of the Si
  3
  N
  4
  phase
  of secondary structural defects in single-crystal silicon has been established. The nature of the
  difference between the theoretically predicted and experimentally observed spatial distribution of
  implanted nitrogen atoms and the synthesized phase of silicon nitride under the conditions of ion-
  electron synthesis is determined.
  Based on their research, they are developed at the level of inventions and tested under the
  conditions of production of an ion-modified embedded dielectric silicon insulator structure. A
  method has been proposed and implemented for creating intermediate germanium Si/SiO
  2
  epitaxial
  layers, which makes it possible to create silicon-germanium dielectric structures.
  The liquid-phase solubility of N in Si has a higher binding energy than the formation energy of
  this Si-SiO
  2
  bond. Oxygen atoms also have a much higher solubility in silicon. This means that under
  conditions of electron irradiation, when the low temperature reaches 500–700
  ℃
  and higher, the
  formation of Si/SiO
  2
  bonds can occur as the dose increases.
  When the observed glass concentration is reached, the subsequent formation of Si/SiO
  2
  bonds in the mobile region stops, and dispersion of excess oxygen atoms with a high diffusion
  coefficient in SiO
  2
  from the diffusion zone also occurs in the glass. It is in the region of the edges of
  the maximum distribution of ions that new Si-SiO
  2
  bonds are formed. Unlike oxygen atoms,
  nitrogen atoms are slightly soluble in silicon (their equilibrium solubility is 3 times less than that of
  oxygen) and have a very low diffusion coefficient. The spatial distribution of nitrogen atoms in silicon
  during the deposition of high-temperature ions and the kinetics of nitrogen accumulation in silicon
  are studied from the point of view of its interaction with competing deposits in the crystalline
  matrix.
  Conclusion. Аt all implantation and flash temperatures, nitrogen is not redistributed to a
  depth exceeding the average range of ions and does not evaporate in a vacuum. The critical
  temperature is enough to stop accumulation in the nitrogen-saturated layer. The sample is poured
  onto the surface at a temperature of 900
  ℃
  and above the critical temperature for the formation
  of secondary defects (for example, dislocation rings and dipoles) by nitrogen ions during the
  movement of an ion electron. The observed effects show that the appearance of secondary
  radiation defects in silicon creates conditions for the accumulation of nitrogen atoms in the layer.
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