title: Fig.1.Dependence of the thickness of the p
text: Namangan Institute of Engineering and Technology
  nammti.uz
  10.25.2023
  Pg.267
  In order to optimize the growth technology and the design of thyristors, the dependences of
  the transfer coefficients of structures on the thickness of the low-resistance part of the p
  0
  -region
  and on temperature were studied (Fig. 2).
  It can be seen that the transfer coefficient α of transistor n
  +
  - p
  0
  - n
  0
  structures drops sharply
  already at a thickness p
  0
  = 30 µm regardless of the temperature onset crystallization. At the same
  time, the thickness of the high-resistanceparts hi - areas up to hi-120 µm are nothas a significant
  impact on the value transmission coefficients.
  Thus, the above features of obtaining lightly doped layers and p-n junctions based on them
  show a real possibility of creating high-speed pulse transistors and thyristors.Optimization of the
  technology for obtaining high-voltage p-n junctions based
  on lightly doped GaAs layers,
  development of new principles for the generation and transport of charge carriers in semiconductor
  structures based on materials with a high proportion of radiative recombination made it possible to
  obtain high-voltage three-electrode switches with subnanosecond turn-on times.
  References
  1.
  AlferovZh.I. Grekhov I.V., Korolkov V.I., etc. Formation of high-voltage voltage drops in
  the picosecond range on gallium arsenide diodes.
  Letters to JTF, Vol. 13, No. 18, pp. 1089-1093.
  1987.
  2.
  Bowers H.C. Space-charge-induced negative resistance in avalanche diodes.-IEEE Trans.
  EI.Devices, v. ED. 15. 1967.
  3.
  E. V. Solovieva, M. G. Milvidsky, L. D. Sabanova, L. V. Berman, G. A. Kolobova, B. N.
  Sharonov, and L. M. Morgulis, J. Surf. The role of impurities and
  defects in the formation of
  properties of undoped gallium arsenide layers. In: Growth and doping of semiconductor crystals
  and films. Part 11. - Novosibirsk: Science, pp. 248-252. 1977.
  4.
  Grekhov I.V., Smirnova I.A. Semiconductor Powerful Subnanosecond
  Switches with a
  Long Hold Time.
  Letters to ZhTF, V.11.No. 15, p. 901, 1985.