title: Namangan Institute of Engineering and Technology
text: Namangan Institute of Engineering and Technology
  nammti.uz
  10.25.2023
  Pg.256
  Comparison of experimental and theoretical energy levels.
  0
  1
  2
  3
  4
  5
  6
  7
  8
  9
  15
  3
  E (MeV)
  8
  1
  2
  K
  2
  2
  K
  4
  0
  K
  3
  0
  K
  2
  0
  K
  1
  0
  K
  6
  6
  10
  8
  6
  14
  12
  10
  8
  18
  16
  14
  12
  10
  8
  30
  28
  26
  24
  22
  20
  18
  16
  14
  12
  10
  8
  13
  14
  12
  11
  10
  98
  7
  5
  3
  4
  6
  6
  6
  6
  4
  4
  4
  4
  4
  4
  2
  2
  2
  2
  2
  2
  2
  0
  0
  0
  0
  0
  exp. theor
  exp. theor
  exp. theor
  exp. theor
  exp. theor
  exp. theor
  exp. theor
  156
  Gd
  5
  0
  K
  Table 1.
  Multipole mixture coefficients
  δ( 2
  1)
  E
  M
  for
  160
  Gd
  i
  i
  I K
  f
  f
  I K
  γ
  , MэВ
  E
  )
  2
  (
  E
  B
  2
  e fm
  )
  1
  (
  M
  B
  μ
  N
  exp.
  [7]
  exp.
  [6]
  .
  theor
  .
  adiab
  22
  1
  20
  1
  0.9134
  –18.23
  –0.050
  –0.45(+4,–5)
  –72(+35,–∞)
  2.8
  –
  32
  1
  20
  1
  0.9822
  18.71
  0.056
  +47(+18,–10)
  +47(+18,–10)
  2.7
  –
  32
  1
  40
  1
  0.8089
  14.39
  0.049
  0.11(3)
  –11.7(+16,–23)
  1.98
  –
  42
  1
  40
  1
  0.8995
  –19.70
  –0.110
  +21(+21,–7)
  +21(+21,–7)
  1.34
  –
  52
  1
  40
  1
  1.0125
  16.55
  0.089
  +15(+17,–6)
  +49(+34,–14)
  1.57
  –
  52
  1
  60
  1
  0.746
  16.88
  0.082
  +8(+13,–4)
  +0.03(3) or
  –22(+11,–800)
  1.28
  –
  62
  1
  60
  1
  0.8782
  –19.16
  –0.175
  –
  +30 <
  δ
  <–1.5
  0.80
  –
  20
  2
  20
  1
  1.3611
  –4.47
  0.108
  0.00(8)
  –0.02(4) or
  +2.46(+30,–25)
  –
  0.46
  –
  40
  2
  40
  1
  1.3130
  –6.48
  0.190
  +0.28(+34,–12)
  +0.57(+17,–44)
  –
  0.37
  –
  11
  1
  20
  1
  1.4934
  7.48
  0.010
  +1.34(+16,–6)
  +0.3<
  δ
  <24.6
  9.31
  9.53
  11
  1
  22
  1
  0.5801
  –6.098
  –0.003
  +0.28(+25,–18)
  +0.45(+50,–24) or
  +2<
  δ
  <–11
  11.8
  –
  Namangan Institute of Engineering and Technology
  nammti.uz
  10.25.2023
  Pg.257
  21
  1
  20
  1
  1.5114
  –0.776
  0.064
  –
  +0.24(5) or
  +5.8(+24,–13)
  –
  0.15
  2.11
  31
  1
  20
  1
  1.5897
  –5.316
  0.008
  –
  +0.9(5)
  –9.0
  –4.15
  31
  1
  40
  1
  1.4167
  5.538
  0.007
  –
  +1.5(5)
  9.68
  6.75
  20
  3
  20
  1
  1.5235
  5.213
  –0.081
  –
  0.83(+10,–15) or
  –3.4(+8,–11)
  –
  0.82
  –
  20
  3
  32
  1
  0.5414
  –1.676
  –0.001
  –
  +0.06(5) or
  –4.3(+12,–29)
  8.4
  –
  References
  1.Usmanov P. N., Mikhailov I. N. // Phys. Part. Nucl. 1997. V. 28. № 4. Р. 348.
  2.Usmanov P. N., Vdovin A. I., Yusupov E. K., Salikhbaev U. S., // Phys. Part. Nucl. Letters.
  2019. V. 16. № 6. P. 706.
  3. Nica N. // Nucl. Data Sheets. 2017. V. 141. P. 1.
  4. Reich C. W. // Nucl. Data Sheets. 2005. V. 105. P. 557.
  5. Govor L. I., Demidov A. M., Mikhailov I. V. // Phys. At. Nucl. 2001. V. 64. № 7. Р. 1254.
  6. Govor L. I., Demidov A. M., Kurkin V. A., Mikhailov I. V. // Phys. At. Nucl. 2009. V. 72. № 11.
  Р. 1799.
  7. Lesher S. R., Casarella C., Aprahamian A. et al. // Phys. Rev. C. 2017. V. 95. 064309.
  SPECTRAL CHARACTERISTICS OF THE ABSORPTION COEFFICIENT AND ENERGY POSITION
  OF DEFECTS
  R.G.Ikramov, M.A.Nuriddinova, Kh.A.Muminov, D.M.Mukimjonov
  Namangan Institute of Engineering and Technology
  E-mail:
  xamuminov@mail.ru
  Abstract: In this manuscript, we theoretically obtained the defeсtiv absorption spectra of
  hydrogenated amorphous silicon. It is showing that the values of these spectra are determined by
  the density distribution of electronic states localized band in the allowed bands. It was also shown
  that from the experimental data of the defect absorption, the energy positions of the defects can
  be determined by spectra.
  Keywords: hydrogenated amorphous silicon, density distribution of electron states of
  defects, density distribution of electronic states in the allowed bands, Kubo-Greenfood formula,
  Davis-Mott approximation, optical transitions between defects and the allowed bands, defect
  absorption spectra, energy position of defects.
  The experimental results of the spectral characteristics of the defect absorption coefficient in
  films of pseudo-doped amorphous hydrogenated silicon (a-Si: H) are shown in Figure 1. As is known,
  optical transitions of electrons participating in defects are of three types: between defects,
  between defects and tails of allowed zones, between defects and allowed zones. The main role in
  them is played by the absorption coefficient, determined by transitions between defects and
  allowed zones [1]. It follows from this that the spectral characteristics of the absorption coefficient
  Namangan Institute of Engineering and Technology
  nammti.uz
  10.25.2023
  Pg.258
  depend on the energy position of the defects, on the distribution of the density of electronic states
  in the defects and allowed zones. The spectral characteristics of the defect absorption coefficient
  of amorphous semiconductors are determined by the Davis-Mott approximation method from the
  Kubo-Greenwood formula as follows [2].
  Fig.1. Experimental results of the spectral characteristics of the defect absorption
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