title: Adabiyotlar - Namangan Institute of Engineering and Technology nammti uz
text: Namangan Institute of Engineering and Technology
  nammti.uz
  10.25.2023
  Pg.266
  [1] O’Regan, B. and Grätzel, M. (1991) A Low-Cost, High-Efficientcy Solar-Cell Based on Dye
  Sensitized Colloidal TiO2 Films. Nature, 353, 737-740.
  [2] O.
  Mamatkarimov, A.Abdukarimov. About The Characteristics
  Of Multilayer Thin-Film
  Structures With Dyes Based On Titanium Dioxide. Euroasian Journal of Semiconductors Science and
  Engineering 2 (3), 28, 2021.
  [3]A.
  Abdukarimov, I.S. Noor, O. Mamatkarimov, A.K. Arof.“Influence
  of charge carrier
  density, mobility and diffusivity on conductivity–temperature dependence in polyethylene oxide–
  based gel polymer electrolytes” - High Performance Polymers, 2021
  DEVELOPMENT OF TECHNOLOGY FOR CREATING HIGH-VOLTAGE p
  0
  – n
  0
  JUNCTIONS BASED
  ON GaAs
  A.M.Sultanov, A.A.Abdukarimov,
  Namangan Engineering and Technology Institute,Uzbekistan,
  abdullaziz.abdukarimov@mail.ru
  The main problem in creating subnano- and picosecond switches based on GaAs is to obtain
  layers with a given thickness of the base regions and a low dopant concentration.
  A study was made
  of the influence of technological factors on the properties of epitaxial layers and p
  0
  -n
  0
  junctions.
  The thickness of the n
  0
  -layer, exceeding the dimensions of the
  space-charge layer at zero
  mixing of the p-n junction, was (30–35) µm and provided the possibility of effective separation of
  electron-hole pairs created by absorbed radiation[1-2]. The control
  of the position of the p-n
  transition, the estimation of the size of the space charge region was carried out by a method based
  on the observation of the electro-optical effect in gallium arsenide
  during the passage of plane
  polarized infrared light through the crystal.
  For the efficient operation of thyristors and transistors, the thickness of the p0-part should
  be as small as possible, therefore, for them manufacturing can only be used n
  +
  - р
  0
  -n
  0
  structures
  with certain thicknesses p
  0
  - areas that provide high
  transfer coefficient values.
  Defined
  temperature dependence of p
  0
  -layer on temperature the beginning of crystallization (Fig. 1), and
  coefficients segregation of fine acceptor and donor impurities the level of concentration and the
  degree of compensation [3-4].