title: References - Namangan Institute of Engineering and Technology nammti uz
text: Namangan Institute of Engineering and Technology
  nammti.uz
  10.25.2023
  Pg.208
  7.
  Vlasov, S. I., Nazirov, D. N., Kuchkarov, B. K., Bobokhujayev, K. U., (2014). Influence of all-
  round compression on formation of the mobile charg in Iead-borosilicate qlass structure.
  “Uzbekiston Fizika Zhurnali”, 3(16), 231-233.
  8.
  Kuchkarov, B. Kh., Mamatkarimov, O. O., (2019). Influence of ultrasonic action on the rate
  of charge formation of the inversion layer in metal-glass-semiconductor structures. “Vestnik
  KRAUNC. Fiziko-Matematicheskie Nauki”, 4(29), 125-134.
  9.
  Vlasov, S. I., Ovsyannikov, A. V., Ismailov, B. K., Kuchkarov, B. H. (2012). Effect of pressure
  on the properties of Al-SiO₂-n-Si
  structures. “Semiconductor Physics Quantum Electronics &
  Optoelectronics”, 2(15), 166-169.