title: MATHEMATICAL MODELING OF SHUBNIKOV-DE HAAS OSCILLATIONS IN NARROW-GAP
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  MATHEMATICAL MODELING OF SHUBNIKOV-DE HAAS OSCILLATIONS IN NARROW-GAP Pdf ko'rish
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  Bog'liq ТўпламMATHEMATICAL MODELING OF SHUBNIKOV-DE HAAS OSCILLATIONS IN NARROW-GAP
  SEMICONDUCTORS UNDER THE INFLUENCE OF TEMPERATURE AND ABSORPTION OF
  MICROWAVE RADIATION
  R.G.Rakhimov
  Namangan Institute of Engineering and Technology
  Annotation. In recent years, much attention has been paid to the definition and study of
  quantum oscillation phenomena under the influence of temperature, a strong electromagnetic
  field, and deformation in bulk and low-dimensional semiconductors. With the help of such
  phenomena, it is possible to determine some basic physical quantities (the effective masses of
  charge carriers, magnetoresistance, magnetic susceptibility, etc.) and study the band energy spectra
  of electrons in new semiconductor materials. Shubnikov-de Haas, de Haas-van Alphen oscillations
  and the quantum Hall effect were discovered at ultralow temperatures and superstrong magnetic
  fields. In this case, oscillation phenomena were observed in bulk semiconductors and metals.
  Keywords: semiconductor, electron gas, oscillation, microwave, Landau levels, electric field,
  mathematical model, Shubnikov-de Haas oscillations.
  At present, interest has increased in Shubnikov-de Haas oscillations in semiconductors during
  the absorption of microwave radiation. In particular, Shubnikov-de Haas oscillations in HgSe
  samples with different concentrations of Fe impurities at low temperatures and strong microwave
  fields were considered in work[1]. In this work, the dependence of oscillations on the derivative of
  the absorption power P with respect to the magnetic field strength
  dP
  H
  dH
  on the reverse magnetic
  field
  1
  H
  was observed in narrow-gap semiconductors at various impurity concentrations.
  As is known, all quantum oscillation phenomena strongly depend on the spectral density of
  states in semiconductors. In works [2-6], the temperature dependence of the spectral density of
  states in narrow-gap semiconductors in quantizing magnetic fields was studied. However, these
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