text: Silicon carbide exists in about 250 crystalline forms. Through inert atmospheric pyrolysis of preceramic polymers, silicon carbide in a glassy amorphous form is also produced. The polymorphism of SiC is characterized by a large family of similar crystalline structures called polytypes. They are variations of the same chemical compound that are identical in two dimensions and differ in the third. Thus, they can be viewed as layers stacked in a certain sequence.
  Alpha silicon carbide (α-SiC) is the most commonly encountered polymorph, and is formed at temperatures greater than 1700 °C and has a hexagonal crystal structure (similar to Wurtzite). The beta modification (β-SiC), with a zinc blende crystal structure (similar to diamond), is formed at temperatures below 1700 °C. Until recently, the beta form has had relatively few commercial uses, although there is now increasing interest in its use as a support for heterogeneous catalysts, owing to its higher surface area compared to the alpha form.
  Pure SiC is colorless. The brown to black color of the industrial product results from iron impurities. The rainbow-like luster of the crystals is due to the thin-film interference of a passivation layer of silicon dioxide that forms on the surface.
  The high sublimation temperature of SiC (approximately 2700 °C) makes it useful for bearings and furnace parts. Silicon carbide does not melt but begins to sublimate near 2700 °C like graphite, having an appreciable vapor pressure near that temp. It is also highly inert chemically, partly due to the formation of a thin passivated layer of SiO2. There is currently much interest in its use as a semiconductor material in electronics, where its high thermal conductivity, high electric field breakdown strength and high maximum current density make it more promising than silicon for high-powered devices. SiC has a very low coefficient of thermal expansion of about 2.3 × 10 K near 300 K (for 4H and 6H SiC) and experiences no phase transitions in the temperature range 5 K to 340 K that would cause discontinuities in the thermal expansion coefficient.