text: Wet etching of GaAs industrially uses an oxidizing agent such as hydrogen peroxide or bromine water, and the same strategy has been described in a patent relating to processing scrap components containing GaAs where the  is complexed with a hydroxamic acid ("HA"), for example:
  :GaAs +  + "HA" → "GaA" complex +  + 4 
  This reaction produces arsenic acid.