text: Silicon carbide can host point defects in the crystal lattice which are known as color centers. These defects can produce single photons on demand and thus serve as a platform for single-photon source. Such a device is a fundamental resource for many emerging applications of quantum information science. If one pumps a color center via an external optical source or electric current, the color center will be brought to the excited state and then relax with the emission of one photon.
  One well known point defect in silicon carbide is the divacancy which has a similar electronic structure as the nitrogen-vacancy center in diamond. In 4H-SiC, the divacancy has four different configurations which correspond to four zero-phonon lines (ZPL). These ZPL values are written using the notation V-V and the unit eV: hh(1.095), kk(1.096), kh(1.119), and hk(1.150).