text: It is important to note that, even though Fickian diffusion has been used to model diffusion processes in semiconductor manufacturing (including CVD reactors) in early days, it often fails to validate the diffusion in advanced semiconductor nodes (< 90 nm). This mostly stems from the inability of Fickian diffusion to model diffusion processes accurately at molecular level and smaller. In advanced semiconductor manufacturing, it is important to understand the movement at atomic scales, which is failed by continuum diffusion. Today, most semiconductor manufacturers use random walk to study and model diffusion processes. This allows us to study the effects of diffusion in a discrete manner to understand the movement of individual atoms, molecules, plasma etc. 
  In such a process, the movements of diffusing species (atoms, molecules, plasma etc.) are treated as a discrete entity, following a random walk through the CVD reactor, boundary layer, material structures etc. Sometimes, the movements might follow a biased-random walk depending on the processing conditions. Statistical analysis is done to understand variation/stochasticity arising from the random walk of the species, which in-turn affects the overall process and electrical variations.