text: the present invention provides a method for fabricating a resonator with reference to fig1 - 22 . a method of fabricating a quartz resonator according to a first embodiment of the present invention will now be described with reference to fig1 - 13 . referring to fig1 a quartz substrate 2 having a first surface 3 and a second surface 5 , a first substrate 4 , and a base substrate 14 are provided . the first substrate 4 may comprise a material such as silicon or gaas . in this embodiment , both the first substrate 4 and quartz substrate 2 may be provided in the form of 3 inch or larger wafers . a portion of the first substrate 4 is etched away creating a cavity 6 , as shown in fig2 . the etched cavity 6 can be fabricated with a wet etch of potassium hydroxide , or a dry reactive ion etch using a gas having a fluorine chemistry . the first surface 3 of the quartz substrate 2 is then patterned and metallized using a lift - off technique . in the lift - off technique , a thin layer of photoresist 7 is patterned on the first surface 3 of the quartz substrate 2 , as shown in fig3 . using lithography , photoresist is removed in the regions where metallization is desired . the metal is then deposited on the photoresist 7 and in the regions where the photoresist 7 was removed . the photoresist is then removed leaving metal only in the desired regions on the first surface 3 of the quartz substrate 2 as shown in fig4 . during patterning and metallizing at least one first electrode 8 is deposited on the first surface 3 of the quartz substrate 2 . the first electrode 8 may be comprised of a combination of ti , pt , au , or cr , pt , au , deposited in that order on the first surface 3 of the quartz substrate 2 in that order . shown in fig4 are two first electrodes 8 on the first surface 3 of the quartz substrate 2 . additionally , a first tuning pad 10 may be deposited on the first surface 3 of the quartz substrate 2 . the first tuning pad 10 is comprised of the same material as the first electrodes 8 . the purpose of the two first electrodes 8 and the first tuning pad 10 will be discussed later . after the first electrodes 8 and the first tuning pad 10 are deposited , the quartz substrate 2 is bonded to the etched first substrate 4 , as shown in fig5 a using for example , an ev 501 wafer bonder which is commercially available . to bond the quartz substrate 2 to the first substrate 4 , the quartz substrate 2 and first substrate 4 are thoroughly cleaned in a megasonic cleaning system , which makes use of ultrasonic waves to remove particle contaminants . after the wafers are cleaned , they are brought in contact with each other . the contact between the quartz substrate 2 and the first substrate 4 creates a bond due to the well known van der waals force . the first electrodes 8 and the first tuning pad 10 are now located in the cavity 6 of the first substrate 4 . the second surface 5 of the quartz substrate 2 remains exposed , and undergoes a thinning process , shown in fig5 b - 5 e . in order to thin the quartz substrate 2 , the following method is used . for exemplary purposes only , the quartz substrate 2 has an initial thickness of 500 micrometers . a first portion of the quartz substrate 2 is removed by thinning the quartz substrate from about 500 micrometers to 50 micrometers as shown in fig5 b using a mechanical lapping and polishing system . lapping and polishing systems are well known and commercially available from manufacturers such as logitech . in a mechanical lapping and polishing system , a polishing head is spun at a high rate of speed . the lapping and polishing system also comprises a nozzle for dispensing slurry on the quartz substrate 2 . while spinning , the polishing head contacts the quartz substrate in the presence of the slurry , thereby evenly grinding away portions of the quartz substrate 2 . the slurry may be comprised of chemicals such as aluminum oxide to remove quartz from the quartz substrate 2 . next , a second portion of about 1 micrometer of quartz is removed from the quartz substrate 2 , as shown in fig5 c to ensure a smooth surface . this is done with the above described mechanical lapping and polishing system , except a softer chemical such as colloidal silica or cerium oxide is used in the slurry to remove quartz from the quartz substrate 2 . next , a third portion of the quartz substrate 2 is removed to reduce the thickness of the quartz substrate 2 to less than 10 micrometers as shown in fig5 d using reactive ion etching ( rie ) with cf 4 or sf 6 gas 9 , as shown in fig6 a - 6 b . while being thinned in the rie machine , the thickness of quartz substrate 2 is simultaneously monitored using spectropic ellipsometry or reflectometry techniques , as shown in fig6 a - 6 b . in spectroscopic ellipsometry , shown in fig6 a , a beam of white light 18 from a source 19 is shone onto the quartz substrate 2 at an angle of about 15 ° off horizontal . the white light has a known polarization . the reflected white light 20 off the quartz substrate 2 will have a different polarization which is directly related to the thickness of the quartz substrate 2 . a receiver 21 receives the reflected white light 20 and calculates the change in polarization . the change in polarization is directly proportional to the thickness of the quartz substrate 2 . in reflectometry , shown in fig6 b , a laser source 22 shines light 23 , with a known wavelength , onto the second surface 5 of the quartz substrate 2 at an angle of 90 ° off horizontal as shown in fig6 b . a first reflected beam 24 is reflected off the second surface 5 of the quartz substrate 2 . a portion of the incident light also penetrates through the quartz substrate 2 . this creates a second reflected beam 25 which is reflected off the first surface 3 back through the quartz substrate 2 and out the second surface 5 . the first reflected beam 24 and second reflected beam 25 are parallel to each other and are received by a receiver 26 which determines whether the first reflected beam 24 and the second reflected beam 25 add constructively or destructively . if the first and second reflected beams 24 , 25 add constructively , the thickness of the quartz substrate is equal to 25 % of the ratio of the incident light wavelength divided by the refractive index of quartz , or an odd integer multiple thereof , such as 75 %, 125 %, etc . the refractive index of quartz is typically about 1 . 46 . if the first and second reflected beams 24 , 25 add destructively , the thickness of the quartz substrate 2 is equal to 50 % of the ratio of the incident light wavelength divided by the refractive index of quartz , or an integer multiple thereof , such as 100 %, 150 %, etc . after using rie to remove quartz from the quartz substrate 2 , the surface of the quartz substrate 2 may have imperfections that need to be corrected . this can done by using the mechanical lapping and polishing system described above with a chemical such as silica or cerium oxide , to remove about 0 . 01 - 0 . 02 micrometers of quartz , followed up with a wet etch in ammonium bifluoride to remove about 0 . 005 micrometers of quartz from the quartz substrate 2 , as shown in fig5 e . this additional step will help ensure a polished , defect free quartz substrate 2 . after the quartz substrate 2 is thinned , vias 11 are fabricated in the quartz substrate 2 , as shown in fig7 . the vias 11 are created using lithography techniques well known in the art . the vias 11 are contacts which are etched through the quartz substrate 2 to the first electrodes 8 . fig7 shows two vias 11 . once the vias 11 are fabricated , the vias are metallized and the second surface 5 of the quartz substrate 2 is patterned and metallized , as shown in fig8 using the lift - off technique described for depositing the at least one first electrode 8 . during the metallization step , at least one second electrode 12 is deposited on the second surface 5 over the vias 11 . the second electrode 12 may be comprised of a combination of ti , pt , au , or cr , pt , au , deposited in that order on the second surface 5 of the quartz substrate 2 in that order . shown in fig8 are two second electrodes 12 . the first and second electrodes 8 , 12 are now connected through the vias 11 . additionally , a second tuning pad 13 can be deposited during the step of depositing the second electrodes 12 , as shown in fig8 . the second tuning pad 13 is comprised of the same material as the second electrodes 12 . once the first and second electrodes 8 , 12 and first and second tuning pads 10 , 13 have been deposited , a portion of the quartz substrate 2 is removed , thereby creating a modified quartz substrate 2 a , as shown in fig9 . such portion is removed using lithography and rei techniques well known in the art to divide the quartz substrate into individual devices and determine the desired dimensions of the quartz substrate 2 . the first and second tuning pads 10 , 13 on the modified quartz substrate 2 a allow the resonant frequency of the quartz substrate 2 a to be adjusted . by ablating a portion of the first and second tuning pads 10 , 13 , the resonant frequency of the quartz substrate 2 a can be adjusted . however , it is also possible to adjust the resonant frequency by ablating a portion of the first and second electrodes 8 , 12 . the first and second tuning pads 10 , 13 can be ablated using known techniques such as focused ion beam milling or laser ablation . as already mentioned above with reference to the detailed description of fig1 a base substrate 14 is provided . the base substrate 14 is comprised of a group iii - v material or sige . fig1 shows a modified base substrate 14 a , where a portion of the base substrate 14 shown in fig1 has been removed . the removal of a portion of the base substrate 14 is done using lithography techniques well known in the art . at least one probe pad 16 is deposited on the modified base substrate 14 a . fig1 shows , for example , two probe pads 16 . the probe pads are deposited using the same lift off technique used to deposit the at least one first electrode 8 discussed previously . the probe pads 16 may be comprised of a gold / germanium alloy , nickel , and gold deposited in that order . after the probe pads 16 have been deposited on the modified base substrate 14 a , the bottom electrodes 12 of the modified quartz substrate 2 a are bonded to the probe pads 16 along bonding line 17 , as shown in fig1 using an au — au compression bonding scheme . in the au — au compression bonding scheme , the quartz substrate 2 , the second electrodes 12 , the probe pads 16 , and the modified base substrate 14 a are heated to a temperature greater than 300 ° c . in a vacuum having a pressure no greater than 10 − 4 torr . then the second electrodes 12 and probe pads 16 are pressed together , while depressurized , with a pressure of approximately 1 mpa . this will fuse the probe pads 16 and the second electrodes 12 together , as shown in fig1 . the above described bonded structure provides electrical access from the probe pads 16 to the first electrodes 8 . after the second electrodes 12 have been bonded to the probe pads 16 , the quartz substrate 2 a is removed from the remaining structure , using a combination of wet and dry etches so that a structure like the one shown in fig1 is obtained . the purpose of the first and second electrodes 8 , 12 is to receive an electrical signal from the probe pads 16 which can bias or drive the modified quartz substrate 2 a with an electric field . the electrical signal is preferably an ac signal . when the electrical signal is received by the first and second electrodes 8 , 12 a strain is placed on the modified quartz substrate 2 a . this strain stimulates the mechanical resonant frequency of the modified quartz substrate 2 a by the well - known piezoelectric effect , thereby causing the modified quartz substrate 2 a to oscillate at its resonant frequency . additionally , it is also possible to use the first and second electrodes 8 , 12 to sense the movement of the modified quartz substrate 2 a relative to a specified plane ( not shown ). once the modified quartz substrate 2 a is oscillating at its resonant frequency , it can be used to drive other components at a frequency equal to its resonant frequency . a second embodiment of a method for fabricating a quartz resonator will now be described with reference to fig1 - 22 . this second embodiment is similar to the first embodiment , except the first substrate is removed from the process . in this embodiment , a quartz substrate 30 and a base substrate 40 are provided , as shown in fig1 . a first surface 31 of the quartz substrate 30 is patterned and metallized using the lift - off technique discussed in the first embodiment for depositing first electrodes 8 . during patterning and metallizing , at least one first electrode 36 is deposited on the first surface 31 of the quartz substrate 30 . fig1 shows two first electrodes 36 . additionally , a first tuning pad 38 is deposited on the first surface 31 of the quartz substrate 30 . as aforementioned , a base substrate 40 is provided . this base substrate 40 is comprised of a group iii - v material or sige . in order to obtain a modified base structure 40 a , shown in fig1 , a portion of the base structure 40 is removed using the techniques discussed in the first embodiment . at least one probe pad 42 is deposited on the modified base substrate 40 a using the lift - off technique discussed in the first embodiment for depositing probe pads 16 . shown in fig1 are two probe pads 42 . after the probe pads 42 have been deposited on the modified base substrate 40 a , the first electrodes 36 of the quartz substrate 30 are bonded to the probe pads 42 along bonding line 43 , as shown in fig1 using the au — au bonding scheme discussed in the first embodiment . next , the quartz substrate 30 is thinned to a thickness of 10 micrometers or less , as shown in fig1 , using the technique discussed in the first embodiment . vias 39 are fabricated in the quartz substrate 30 using the techniques discussed in the first embodiment . the vias 39 , shown in fig2 , are contacts which are etched through the quartz substrate 30 to the first electrodes 36 . once the vias 39 are fabricated , the vias 39 are metallized and the second surface 33 of the quartz substrate 30 is patterned and metallized using the lift - off technique discussed in the first embodiment for depositing second electrodes 12 . during the metallization step , at least one second electrode 46 is deposited on the second surface 33 over the vias 39 . shown in fig2 are two second electrodes 46 . the first and second electrodes 36 , 46 are connected through the vias 39 . furthermore , a second tuning pad 48 can be deposited as shown in fig2 , during patterning and metallization of the second electrodes 46 . finally a portion of the quartz substrate 30 is removed , thereby creating a modified quartz substrate 30 a , as shown in fig2 , using lithography and rie techniques known in the art . once the modified quartz substrate 30 a is oscillating at its resonant frequency , it can be used to drive other components at a frequency equal to its resonant frequency . let it be understood that the foregoing description is only illustrative of the invention . various alternatives and modifications can be devised by those skilled in the art without departing from the spirit of the invention . accordingly , the present invention is intended to embrace all such alternatives , modifications , and variances which fall within the scope of the appended claims .