text: fig1 a shows a basic cross - sectional view of one embodiment of the infrared sensor device 100 according to the disclosure . a basic material of the infrared sensor device 100 comprises an soi wafer 1 ( silicon - on - insulator ), which comprises a carrier substrate 7 ( handle wafer ), an oxide material 6 and a component layer with a semiconductor substrate 5 . a plurality of layers of oxide material 6 are applied on a surface of the soi wafer 1 which is arranged at a top side 11 of the infrared sensor device 100 , said layers constituting a metallization plane with conductor tracks 4 for the electrical supply of a sensor element 2 . the sensor element 2 is embodied as a semiconductor diode , wherein monocrystalline silicon is preferably used as the basic material of the diode , said monocrystalline silicon advantageously having a significantly improved noise behavior ( e . g . as a result of the grain boundary noise being eliminated , in comparison with polycrystalline silicon . the sensor element 2 within the ( soi ) wafer 1 , which is arranged at an underside 12 of the infrared sensor device 12 of the infrared sensor device 100 , is thermally insulated from the rest of the substrate by thermal insulation trenches in the form of a circumferential gap 3 and a cavity 8 . the structure of the diode is substantially oriented vertically , wherein the diode has doped semiconductor substrate zones embodied substantially in a u - shaped fashion . this advantageously brings about reduced surface leakage currents as a result of the pn junction being displaced into the depth and a lower defect density in the space charge zone . as a result of the substantially u - shaped basic structure of the diode , moreover , a packing density of the diodes is advantageously increased , which can bring about a higher pixel density in use in a sensor array . a suspension unit 10 for the sensor element 2 is formed by layers of oxide material 6 which are freed all around and in which conductor tracks 4 are arranged . in vertical orientation , the suspension unit 10 is constructed substantially symmetrically , wherein a thickness of the oxide material 6 in the region of the suspension unit 10 is smaller than in the region of the rest of the sensor element 2 . as a result , a thermal conductivity of the suspension unit 10 can be kept advantageously low by virtue of a small cross - sectional area . as a result , this makes it possible to achieve an improved signal - to - noise ratio ( snr ) of the infrared sensor device 100 by virtue of an increased absorber layer thickness in the pixel region , which is not present in the region of the suspension unit 10 . a highly sensitive infrared sensor device 100 can advantageously be provided as a result . oxide material 6 is likewise arranged laterally around the doping zones of the diode , which advantageously brings about an increased absorber layer thickness , and provides a defined demarcation of the individual diode elements among one another . moreover , as a result , a lateral outdiffusion of the doping zones of the diode need not be taken into consideration , which advantageously permits a higher integration density for the sensor element 2 . an optical thickness of the oxide layers on the sensor element 2 substantially corresponds to an odd multiple of one quarter of the wavelength λ to be detected , which has proved to be particularly expedient for the absorption of electromagnetic radiation . moreover , the symmetrical construction of the suspension unit 10 supports a reduced basic deflection after the suspension unit 10 has been etched free and a low temperature dependence of the deflection . a conductor track 4 preferably comprises a monolayer or multilayers of a combination of the following materials : t , tin , ta , tan . these materials all advantageously have an expedient compromise between electrical conductivity and heat conduction , such that unnecessary heating of the sensor element 2 is avoided as a result of the use of the materials mentioned . a conductor track 4 preferably has a cross section of less than approximately 0 . 1 μm 2 . a polycrystalline silicon 9 can advantageously be used for the conductor tracks 4 and as sacrificial layer material during the production of the infrared sensor device 100 . optionally , a reflector layer 30 is arranged on a surface at the top side 11 of the infrared sensor device 100 , which reflector layer increases an absorption of the radiation to be detected and advantageously increases an efficiency of the infrared sensor device 100 as a result . fig1 b shows a basic plan view of one embodiment of an infrared sensor device 100 according to the disclosure . the gap 3 extending completely circumferentially around the sensor element 2 can be discerned , said gap thermally insulating the sensor element 2 from the rest of the substrate . moreover , the gap 3 serves as a sacrificial layer etching hole in a process for producing the infrared sensor device 100 . the sensor element 2 has a total of eight diodes , for example , a minimum number of the diodes for the sensor element 2 being one . the diodes are electrically connected in series and / or in parallel , wherein a respective diode element is integrated into the silicon of the semiconductor substrate 5 in such a way that the doping zones are delimited laterally by oxide trenches . it can furthermore be discerned that the diodes of the sensor element 2 are arranged substantially below the suspension unit 10 . as a result , an area filling factor of the sensor element 2 can be advantageously increased , as a result of which a greater number of sensor elements 2 can be arranged on a defined area . conductor tracks 4 start substantially in the center of the sensor element 2 and are formed substantially spirally above the sensor element 2 . in this case , the gap 3 is bridged only in two regions in order to provide an electrically conductive connection between the sensor element 2 and a row line 40 and respectively a column line 50 of the infrared sensor device 100 . the small arms of the suspension unit 10 with the conductor tracks 4 , in comparison with conventional constructions , are formed substantially completely above the sensor element 2 , i . e . side facing the top side 11 , rather than for instance alongside those in the prior art , which advantageously brings about an area saving and thus a higher area filling factor . an anchoring ( not illustrated ) of the suspension unit 10 with the conductor tracks 4 is effected on the soi wafer 1 at engagement points of suitable anchor structures . examples of these structures are supporting pillars or walls ( not illustrated ) between the individual sensor elements 2 , wherein the structures of the supporting pillars are formed from semiconductor substrate material . by way of example , aluminum with a silicon - copper doping ( al — si — cu ) is chosen for a metallization of the row lined 40 and respectively of the column line 50 . the material mentioned can also be used for a metallization within the sensor element 2 . the conductor tracks 4 in the arms of the support unit 10 are embodied as long and narrow in relation to their cross section , which advantageously brings about a low thermal coupling between the sensor element 2 and the semiconductor substrate 5 . thermal bridges between the individual sensor elements 2 and to the substrate 7 are advantageously made as small as possible as a result . fig2 a shows an intermediate product of a first step for producing the infrared sensor device according to the disclosure . in this case , a ( soi ) wafer 1 is provided , comprising the individual layers of carrier substrate 7 , oxide material 6 ( preferably embodied as box , buried oxide ) and a layer comprising semiconductor substrate 5 . the semiconductor substrate 5 is preferably embodied as a monocrystalline silicon , thereby advantageously avoiding grain boundary noise within the semiconductor substrate 5 . two islands comprising stop oxide 6 a are applied for the purpose of a trench etching stop . furthermore , trenches are etched into the soi wafer 1 from above in order to structure the ( soi ) wafer 1 as far as the underside of the buried oxide layer . fig2 b shows an intermediate product of a next epitaxy step , in which a material of the semiconductor substrate 5 is grown onto the structure from fig2 a . both the epitaxial layer and the material already present beforehand are advantageously already doped in this case . furthermore , trenches are etched in order to provide a basic geometrical structure of the sensor device 100 according to the disclosure . it is evident that the basic structure of the sensor element 2 within the semiconductor substrate 5 is embodied in a substantially u - shaped fashion . fig2 c shows a further intermediate product of a next step , in which oxide material 6 is filled into the existing trenches . the oxide material 6 filled into the trenches advantageously acts as additional absorber volume for the radiation to be detected . furthermore , this step involves carrying out a p - doping in partial regions of the semiconductor substrate 5 . fig2 d shows , in principle , that in a next step a plurality of layers of oxide material 6 are applied to the structure obtained from fig2 c . in this case , at least two wiring planes are deposited and structured within the layers . conductor tracks 4 are obtained in this way , which conductor tracks can preferably comprise three different materials . they comprise one or a plurality from the materials : ti , tin , ta , tan or a combination of these materials . furthermore ( illustrated in black ), the materials comprise e . g . aluminum with a silicon - copper doping , this material being used in particular for the row line 40 and column line 50 . finally , the materials can comprise polycrystalline silicon 9 . fig2 e shows an intermediate product of a next step , in which sacrificial layer etching holes were introduced into the structure from fig2 d . fig2 f shows a result of a last step of the method for producing the infrared sensor device 100 according to the disclosure . in this case , sacrificial layer etching is carried out , as a result of which a spatially substantially freed sensor element 2 is formed which is thermally insulated from the surrounding substrate by a gap 3 and a cavity 8 arranged below the sensor element 2 . furthermore , the layers of oxide material 6 are undercut in order thereby to form or expose the suspension unit 10 for the sensor element 2 . this advantageously results in a low thermal coupling between the sensor element 2 and the surrounding substrate . as an additional final step ( not illustrated in the figures ), during the manufacture of a sensor array comprising image pixels , wafer level capping of the array wafer with a suitable cap wafer is also carried out for the production of a sufficiently good vacuum for thermal insulation and for the protection of the sensing diode elements . to summarize the disclosure provides an improved infrared sensor device which is suitable for a use in a sensor array , e . g . for a use in thermographic cameras . the disclosure can be used in all applications in which thermal radiation is intended to be detected in a spatially resolved manner and in which unit costs are of greater importance than high - precision temperature measurement . examples thereof include motor vehicle night vision devices and thermography , for example for building insulation or process monitoring . furthermore the disclosure can be used to realize thermographic cameras for domestic use ( e . g . for localizing insulation leaks or heat leaks ). moreover , the infrared sensor device according to the disclosure can be used as an individual pixel for temperature monitoring with detection of the inherent thermal radiation of a variety of objects , devices or living beings . an image pixel element realized with the infrared sensor device according to the disclosure advantageously has a low thermal coupling to the substrate as a result of a small cross section of the suspension unit , as a result of a long length of arms of the suspension unit , as a result of the absence of thermal bridges and as a result of a thick absorber layer and / or reflector layer . as a result of the presence of the layers of oxide material in lateral extension around the diode , it is not necessary to take account of lateral outdiffusion of the implantations , as a result of which the lateral dimensions of the diode are advantageously defined lithographically . this advantageously allows a denser design on a smaller area . furthermore , the pn junction of the diode is at a distance from the surface of the sensor element , which means moved away from implantation damage of the doping processes of the semiconductor substrate 5 into the depth . the resultant lower defect density in the space charge zone advantageously leads to reduced leakage currents and an improved signal - to - noise ratio ( snr ). as a result , the disclosure provides an infrared sensor device having highly sensitive image pixels , a low heat capacity , a low thermal coupling to the substrate and thus a high image refresh frequency . in comparison with conventional infrared sensor devices , with the same signal - to - noise ratio the infrared sensor device according to the disclosure can be produced in a smaller fashion and thus more cost - effectively . although the present disclosure has been described on the basis of preferred exemplary embodiments , it is not restricted thereto . in particular , the materials and topologies mentioned are merely by way of example and are not restricted to the examples explained . the person skilled in the art will therefore be able to modify the described features of the disclosure or combine them with one another , without departing from the essence of the disclosure .