text: example embodiments of the present invention will be described in detail with reference to the accompanying drawings . example embodiments provide a structure and a method of forming a self - aligned vertical pnp transistor for high performance sige cbicmos process . fig1 shows a cross sectional view of the transistor . in addition cmos devices can be simultaneously formed . with reference to the accompanying drawings , fig1 - 14 illustrate fabrication process steps . throughout the drawings , an npn region 12 in which a vertical npn transistor will be created is shown on the right , and a vpnp region 14 in which a vertical pnp transistor will be created is shown on the left . it should be recognized that some of the steps of fabrication according to conventional sige technology have been omitted for brevity and clarity . an example method to form the vertical pnp transistor for sige cbicmos process as shown in fig1 to 14 . fig1 b shows a schematic of a principle circuit of bicmos gate and output voltage swing for a base - charge cbicmos that can be made using the devices of the example embodiments of the invention ( such as the vpnp device ) 110 fig1 . as shown in fig1 , we provide a substrate having a vpnp region 14 , a npn region 12 and a cmos device region ( not shown ). cmos devices will be formed in the cmos device along with the steps to form the vpnp and npn devices . we form bn mask ( not shown ) over the substrate . the bn mask has bn openings over a portion of the npn region 12 and over portions of the substrate adjacent to the borders of the vpnp region 14 and a npn region 12 . we implant n - type dopant into the substrate to form a bn + ( buried n +) region 20 a in the npn region 12 and border bn + regions 20 b . b . perform oxidation and oxide etching , grow sacrificed oxide , do bp mask , bnwell and bp implant next , we perform an oxidation to form an oxide layer ( not shown ). then we etch the oxide layer . the oxide grows faster over the heavily doped bn + region than the lightly doped substrate . since the oxide consumes silicon , when this oxide is etched away , 600 a - 800 a steps exist at the edge of the bn + region and become alignment marks that allow subsequence mask level to be aligned with the bn + layer . we perform an oxidation to form 80 angstroms to 120 angstroms ( target 100 a ) of sacrificed oxide ( not shown ). we form a bp / bn mask 22 over the npn region 12 . the bp / bn mask 22 has opening over the vpnp region 14 where the bp region 26 and the bnwell 24 will be formed . we perform a bn well implant to form a bn well ( buried n - type well ) 24 in the vpnp region 14 . next , we perform a bp ( buried p - type ) implant to form a bp ( buried p - type layer ) layer 26 above the bn well 24 in the vpnp region . the subsequently formed vpnp has a very low collector resistance because of the high p concentration bp layer 26 . the buried p - type layer 26 ( bp layer ) provides a low resistance path for pnp collector current flow . referring to fig2 , we then grow an epi layer 30 over the substrate surface . the epi layer is preferably doped with a n - type dopant . the epi layer is preferably n - type doped with a concentration between 1e16 and 2e16 atoms / cc . as shown in fig4 , the n - doped epi layer comprises the n - collector in the npn tx . as shown in fig2 , we form a sti trenches 33 . preferably we form a pad oxide 28 and masking ( e . g ., nitride ) layer 29 . next , we form sti regions 32 using preferably using an etching and oxide process . we form a sti mask 31 ( e . g ., l10 mask ) having sti opening . we etch the pad oxide 28 , masking ( e . g ., nitride ) layer 29 and substrate to form sti trenches 33 . g . grow sti liner oxide and fill hdp , then do l11 mask and oxide etchback , do oxide cmp to form planar sti we can grow a sti liner dielectric layer ( not shown ) ( e . g ., oxide ) on the sti trench sidewalls . as shown in fig3 , next we form at least isolation regions 32 ( sti region 32 ) between the nvpn region 14 and the npn region 12 . we can form at least isolation regions 32 by filling the trench with a dielectric material , preferably a hdp oxide material . next we can planarize the sti region 32 preferably by performing a oxide etchback and then a oxide chemical - mechanical polish ( cmp ) to form a sti region 32 with a planar top surface . h . after sacrificial oxide growth , do sinker mask , sinker implant and driving , then nw mask and implant , pw mask and implant . the sequentially steps process on cmos device region , including vt adjustment implant , gate oxide grow , poly deposition and poly gate etching , ldd implant and nitride space referring to fig4 , in step 4 , we form a sacrificed oxide layer on the epi surface . for a sinker region 38 by performing a sinker implant the sinker region has a n type doping or impurity . the sinker 38 is adjacent to and contacts the buried n + region 20 a . then we form a n - well ( nw ) mask over the epi surface . we perform a n well implant to form n - wells 36 . the n - wells 36 contact the bn + regions 20 b . next we form a p well ( pw ) 34 in the epi layer 30 and in the substrate 10 . the p well is adjacent to the n well 34 . the p well is under the isolation regions 32 . the p well a p - well mask is formed . we perform a p - well implant . we remove the p - well mask . as shown in fig4 , the n - doped epi layer comprises the n - collector 52 in the npn tx . the n collector region 52 preferably has a n type impurity concentration between 1e16 and 2e16 atoms / cm 3 . the following sequentially steps process can be performed on cmos device region , including vt adjustment implant , gate oxide grow , poly deposition ( for cmos gate ) and poly gate etching , ldd implant ( to form cmos ldd regions ) and nitride spacer ( formed on cmos gate sidewalls ) and cmos s / d i / i . the steps can form a cmos fet in the cmos region . i . deposit cmos protector layer , do the second bp mask , then p - collector and n - base implant referring to fig5 , we deposit a dielectric protector layer 44 ( e . g ., cmos protector layer ) on the substrate surface . the dielectric protector layer 44 can be formed of teos oxide and can have a thickness about of 200 angstroms +/− 10 %. the dielectric protector layer 44 ( e . g ., cmos protector layer ) can have multiple functions , 1 ) used as a buffer layer for subsequence sin deposition , because the sin is high stress film and not able adhere well on silicon ; 2 ) a sacrificial oxide for the implant ; 3 ) the composite dielectric layer of vpnp emitter window to separate emitter poly with base region . we then form a second bp mask 46 over the npn region 12 . we perform a p - collector implant to form a p - collector ( vpnp p collector region ) 50 in the vpnp region 14 . we perform a n - base implant to form a n - base region 54 in the p collector 50 in the vpnp region 14 . the n - base region 54 can have a concentration between 8e18 / cm 3 and 2e19 / cm 3 . the n - base region 54 can extend to the top surface of said epi layer . j . form nitride , do pwin mask ( new ) and emitter window etching referring to fig6 , we form lower dielectric layer ( e . g ., sin ) 58 over the dielectric protector layer 44 . the dielectric layer 58 is preferably comprised of nitride and preferably has a thickness between 180 and 220 å . ( target — 200 å ) the sin layer 44 can be used as etch stop layer to control subsequence pwin and base poly etching , it is also used as dielectric layer to forms vpnp emitter window . we form a pwin mask 59 having a pnp emitter opening ( 60 ) over the n base region 54 . we form a pnp emitter opening 60 in the dielectric layer 58 and the dielectric protector layer 44 to expose the n base region 54 . we can etch the dielectric layer 58 and the dielectric protector layer 44 using the pwin mask 59 as an etch mask to form the pnp emitter opening 60 . k . deposit cmos protector layer and also used as pnp emitter poly ; do p emitter poly implant referring to fig7 , we form a protector ( e . g ., polysilicon ) layer 64 over the n base region 54 and the dielectric layer 58 . the polysilicon layer 64 will be etched to form the pnp emitter poly . the polysilicon layer 64 is used to as buffer silicon layer for sige growth . the sige film 70 can not directly deposit on oxide or nitride due to poor adherence . the protector ( e . g ., polysilicon ) layer 64 preferably has a thickness in the opening 60 between 540 and 660 å ( tgt 600 å ). we perform a p emitter poly implant 66 into the polysilicon layer 64 to dope the polysilicon layer 64 and to subsequently form a p emitter 64 a ( see fig8 ). the p emitter region 64 a preferably has a p - type dopant concentration between 1e20 and 2e20 / cm3 after extension base implant ( refer fig1 ). l . open npn base region by bjt mask and etching and then do sic mask and sic implant referring to fig8 , we expose the npn base region in the npn region 12 by forming a bjt mask 65 with a npn base opening 65 a and etching the polysilicon layer 64 , dielectric layer 58 and a dielectric protector layer 44 . next , we can form a sic mask ( not shown ) that has an sic opening in the npn region 12 . we can perform an optional sic implant to form a sic region 71 in the n - collector region 52 under the subsequently formed p sige base 70 b . the sic implant is an option step to get high ft npn device by tuning collector dopant profile . n . grow sige base layer 70 , upper dielectric layer 75 ( e . g ., teos 74 and nitride layers 76 ) referring to fig9 , we grow a sige base layer 70 . the sige layer 70 can have a thickness between 850 and 950 angstroms and can be doped with a p - type dopant such as boron . the sige base layer 70 is comprised of germanium makes up no less than 10 % of the silicon and germanium , and wherein the germanium makes up no more than 30 % of the silicon and germanium . then we form an upper dielectric layer 75 . the upper dielectric layer 75 can be comprised of an oxide layer 74 and a nitride layer 76 . for example , we can form an oxide layer 74 that can be formed of teos and that can have a thickness between 180 and 220 angstroms . we then form a nitride layer 76 that can have a thickness between 180 and 220 angstroms . still referring to fig9 , we form a n - ewin mask ( n - emitter window mask ) 77 that has an n - emitter mask opening 77 a over the npn region 12 . we then etch the layers 74 76 exposed in the n - emitter mask opening to form a n - emitter opening where the n - emitter will be deposited . we then remove the n - ewin mask ( n - emitter window mask ) 77 . referring to fig1 , we form an emitter layer 81 . the emitter layer 81 can be comprised of two layers , such as a first emitter layer 78 and a second emitter layer 80 . for example , we can form a first emitter ( poly ) layer 78 . we then perform a n - type emitter implant to dope the first emitter poly layer 78 . we then grow ( in - situ as - doped ) second emitter poly layer 80 that can have a thickness between 1800 and 2200 angstroms . the second emitter layer 80 can have a n - type dopant concentration about 2e20 / sq - cm +/− 10 %. q . do emitter poly mask and etching , the etching stop on sige layer . to keep resist , do extension base implant ( p_type ) referring to fig1 , we form an emitter poly mask 84 that covers at least the npn emitter region in the npn region 12 . using the mask 84 as an etch mask , we etch the oxide layer 74 and nitride layer 74 76 and emitter layer 81 , to form the npn emitter 80 78 ( 81 ). the etch stops on sige layer 70 . next , with the emitter poly mask 84 still in place , we perform a extension base implant 88 ( e . g ., p_type ) to dope the sige layer 70 and layer 64 with a p - type dopant . the sige layer 70 can have a p - dopant concentration between 1e20 and 2e20 / cm 3 . the p emitter region 64 a preferably has a p - type dopant concentration between 1e20 and 2e20 / cm 3 after extension base implant . r . grow teos .- do base poly mask , this mask also pattern pnp emitter . then remove sige / poly / nitride / teos multi - layers , which composite as cmos protector layer referring to fig1 , we form an insulating layer ( 90 a 90 b ) ( e . g ., implant block layer ). the implant block layer can be made by a teos oxide process and preferably has a thickness between 380 and 420 angstroms . the ( teos ) insulating layer ( 90 a 90 b ) layer is to make sure pnp emitter does not accept subsequence n + self - aligned implant . the implant block layer 90 a 90 b to prevents the pnp emitter do not get implanted by the subsequence n + self - aligned implant .) we next form a base poly and pnp emitter mask 94 b 94 a that covers the npn base poly 70 b and the pnp emitter 70 a 64 a . ( vpnp sige emitter 70 a ) ( vpnp poly emitter 64 a ) using the mask 94 a 94 b as an etch mask , we etch and remove the sige / poly / nitride / teos multi - layers , which composite as a cmos protector layer . the etch forms insulating layer 90 a 90 b . s . form n + s / d mask and perform a n + implant to form n + s / d regions and form pnp self - align high doped base region referring to fig1 , we form a n + s / d mask ( not shown ) having opening where the n + s / d regions will be formed . we perform a n + implant to form n + s / d regions 91 that function as the pnp self - align high doped base region 91 . the n_s / d regions 91 can have a n - type impurity concentration of about 2e20 / cm 3 . the implant also forms n + s / d region 91 in the sinker regions in the npn region 12 . t . do p + s / d mask and p + implant . the subsequence rta active s / d dopant , meantime , the dopant in npn and pnp emitter poly is also out - diffused into sige or silicon to form shallow emitter region next , we form a p + s / d mask ( not shown ) having openings were the p + s / d region will be formed . we perform a p + implant to form vpnp p + regions 95 in the pw 34 in the vpnp region 14 . for vpnp and npn parts , no other regions are absorbed p + implant . next , we perform a rta to active the p and n type s / d dopants . during the anneal , the dopant in npn and pnp emitters 78 64 a ( poly ) also out - diffuses into npn sige base 70 b or the pnp n - base region 26 ( e . g ., silicon ) to form shallow pnp emitter region 96 and shallow npn emitter region 98 . u . fig1 , then deposit 150a teos and 900a nitride to form npn and pnp space to avoid emitter and base short during salicide process referring to fig1 , we form npn spacers 102 and vpnp spacers ( bjt sin spacers ) 100 . in an example process we grow ateos layer ( 150 angstrom ) and a nitride layer ( 900 angstroms ), perform space etching to form npn and pnp spacer which can prevent emitter and base short during a subsequent silicide / salicide process . the insulating layer ( 90 a 90 b ) layer is also removed during space etching . next , we grow a teos layer ( 400 angstrom ) named as salicide block ( sab ) layer , perform sab mask ( not shown ) and sab etching to remove sab teos layer in all cmos and bjt device region . next , we form silicide region 106 on the exposed silicon surfaces . this forms the pnp device 110 and the npn device 112 . the cmos process steps not shown may include gate oxide growth , fet polysilicon deposition and etch , spacer growths and / or depositions and etches , extension and halo masks and implants , source / drain masks and implants , etc . an example overview is a method of forming a vpnp transistor comprised of sige while forming a cmos device and an npn transistor using at least three masking steps in addition to masking steps utilized in forming the cmos and npn devices , the vpnp transistor is comprised of a vpnp emitter , a vpnp base , a vpnp collector and the npn transistor is comprised of a npn emitter , a npn base and a npn collector , the method comprises the following steps : fig1 — provide a substrate 10 having a vpnp buried n region 20 b around the vnpn region 14 and a npn buried n region 20 a in the npn region ; forming a buried n well 24 in the vpnp region extending into the vpnp buried n region 20 b ; forming a buried p + region 26 adjacent to and above the buried n well region 24 ; fig2 — forming an epi layer 30 over the substrate 10 ; the epi layer is doped n - type ; fig2 & amp ; 3 — forming isolation region 32 in the substrate at least between the npn region 12 and the vpvp region 14 ; fig4 — forming a sinker region 38 the npn region that contacts the npn buried n region 20 a ; fig4 — forming n wells 36 in the epi layer and substrate ; the n wells 36 contact the buried n well 20 b ; fig4 — forming a p well region 34 in the vpnp region 14 ; the p well region 34 contacting the buried p region 26 ; a n - collector region 52 for the npn transistor is comprised of the epi layer over the a npn buried n region 20 a in the npn region ; the epi layer is doped n - type ; fig5 — forming a vpnp ( p ) collector region ( p collector 50 ) over the vpnp buried p region 26 in the vpnp region 14 ; fig5 — forming a vpnp ( n ) base region 54 in the vpnp ( p ) collector region 50 ; fig6 — forming a lower dielectric layer 58 over the substrate ; the lower dielectric layer 58 has an ( vpvp ) emitter opening 60 over the vpnp ( n ) base region 54 ; fig7 forming an emitter poly layer 64 over the first dielectric layer 58 44 and filling the ( vpvp ) emitter opening 60 ; fig7 — doping the emitter poly layer 64 with a p - type dopant ; fig8 — forming a npn base region opening in the emitter poly layer 64 over the lower dielectric layer 58 over the npn region 12 ; fig9 — forming a sige layer 70 over the poly layer 64 and filling the npn base region opening ; forming an upper dielectric layer 75 over the sige layer 70 ; the upper dielectric layer having an npn emitter opening exposing the sige layer 70 ; fig1 — forming an emitter poly layer 78 80 over the an upper dielectric layer 75 and filling the npn emitter opening in upper dielectric layer 75 over the sige layer 70 ; fig1 — forming an npn emitter 81 ( 78 80 ) over the sige layer 70 by patterning the emitter poly layer 78 80 and the upper dielectric layer 75 ( 74 76 ); fig1 — doping the sige layer 70 in the vpnp region 14 with a p type dopant ; fig1 — forming an insulating layer 90 ( teos 90 ) over the sige layer 70 , and the npn emitter 81 ; fig .— 12 — patterning the insulating layer 90 ( teos 90 ), the sige layer 70 and the lower dielectric layer 58 44 to form a vpnp emitter 70 a 64 a in the vpnp region 14 and a npn base 70 b in the npn region 12 ; fig1 — forming n + s / d regions 91 in the vpnp region 14 ; fig1 — forming vpnp p + region 95 in the p well region 34 ; fig1 — forming a vpnp p + emitter region 96 in the vpnp base 54 by diffusing p dopants from the vpnp emitter 70 a 64 a ; fig1 — forming a n + emitter 98 in the npn base 70 b . an example device embodiment is shown in fig1 . the device comprises vpnp transistor comprised of sige , a cmos device and an npn transistor . the vpnp transistor is preferably comprised of a vpnp emitter , a vpnp base , a vpnp collector and the npn transistor preferably is comprised of a npn emitter , a npn base and a npn collector . in more detail , referring to fig1 , an example overview of device comprised of a vpnp transistor comprised of sige while forming a cmos device and an npn transistor . the vpnp transistor is comprised of a vpnp emitter , a vpnp base , a vpnp collector and the npn transistor is comprised of a npn emitter , a npn base and a npn collector . the device comprises the following : a substrate 10 having a nvpn region 14 and a npn region ; the substrate having a vpnp buried n region 20 b around the nvpn region 14 and a npn buried n region 20 a in the npn region ; a buried n well 24 in the vpnp region extending into the vpnp buried n region 20 b ; a buried p + region 26 adjacent to and above the buried n well region 24 an epi layer 30 over the substrate and the buried n well 24 and the vpnp buried n region 20 b ; a isolation region 32 in the substrate at least between the nvpn region 14 and a npn region 12 ; a sinker region 38 in the npn region in the epi layer that contacts the npn buried n region 20 a ; n wells 36 in the epi layer and substrate ; the n wells contact the buried n well 20 b ; a p well region 34 in the vpnp region 14 ; the p well region 34 contacting the buried p region 26 ; the p well ( pw ) 34 in the epi layer 30 and in the substrate 10 ; the p well is adjacent to the n well 36 ; portions of the p well 34 is under the isolation region 32 ; a n - collector region 52 in the epi layer over the a npn buried n region 20 a in the npn region ; the epi layer is doped n - type ; a vpnp ( p ) collector region ( p collector 50 ) in the epi layer over the vpnp buried p region 26 in the vpnp region 14 ; a vpnp ( n ) base region 54 in the vpnp collector region 50 in the epi layer ; a npn emitter 81 ( 78 80 ) over a npn sige base 70 b over the n - collector region 52 in the npn region 12 ; the a vpnp emitter 70 a 64 a in the vpnp region 14 ; a npn sige base 70 b in the npn region 12 over the epi layer 30 ; n + s / d regions 91 in the vpnp region 14 adjacent the vpnp emitter 70 a 64 a 96 ; a vpnp p + region 95 in the p well region 34 ; a vpnp p + emitter region 96 in the vpnp base 54 by diffusing p dopants from the vpnp emitter 70 a 64 a ; fig1 — forming a npn n + emitter 98 in the npn base 70 b . some of the example embodiments of the self - aligned vpnp transistors provide some the following benefits : bn mask 22 ( fig1 ) and bp mask 46 ( fig5 ) ( same reticle for bn mask 22 and bp mask 46 ). and pwin mask 59 ( fig6 ) as plug - in module , fully integration with sige bicmos processes . high doping polysilicon emitter can increase hole injection efficiency from emitter to base , reduce emitter resistor , and form very shallow eb junction . high doping polysilicon emitter can have a dopant concentration range between 1e20 and 2e20 / cm3 self - aligned n + base implant to form n + base region 54 can reduce base resistance and parasitical eb capacitor . very low collector resistor benefits from bp layer 26 . pnp transistor is isolated from other cmos and npn devices by bnwell , nwell and bn + junction . with reference to fig1 , the resulting npn transistor 112 can comprise : n emitter 80 78 ; n + emitter region 98 , p sige base region 70 b , n collector 52 bn + region 20 a and silicide regions 106 . the vertical pnp ( vpnp ) transistor 110 can comprise : emitter ( having a sige top portion 70 a and a polysilicon bottom portion 64 a ), a p + emitter region 96 , n base region 26 , a p collector region 50 and a buried p region 26 below and adjacent to the p collector region , silicide regions 106 . 2 ) bp region 26 provides a low resistance path for vpnp collector current ; 3 ) teos dielectric protector layer 44 and lower dielectric layer ( e . g ., sin ) 58 help form vpnp emitter window 60 ( fig6 and 7 ); given the variety of embodiments of the present invention just described , the above description and illustrations show not be taken as limiting the scope of the present invention defined by the claims . while the invention has been particularly shown and described with reference to the preferred embodiments thereof , it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the invention . it is intended to cover various modifications and similar arrangements and procedures , and the scope of the appended claims therefore should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements and procedures .