text: referring to fig2 a preferred embodiment of the present invention includes a computer - based controller 10 , a chamber controller 11 including a temperature control module 12 and a chamber interface module 14 , a power supply controller 16 , a power supply 18 , a driver card 20 , and a dut board 22 which is placed inside a chamber 24 . the chamber 24 is equipped to generate and produce stress conditions in response to the signals from the temperature control module 12 and the chamber interface module 14 , where both of these modules are controlled and operated by the computer 10 via communication links 21 and 23 . specifically , the temperature control module 12 controls the temperature 13 in the test chamber 24 and the chamber interface module 14 controls the electromagnetic field 15 in the test chamber 24 . the computer 10 also controls and operates the power supply controller 16 and the driver card 20 . the driver card 20 in turn sends and receives signals to and from the dut board 22 . although two communication links are illustrated herein , one communication link is sufficient . fig3 provides a block diagram of the driver card . here , there are a number of input signals and blocks of circuitries receiving the signals for carrying out specific tasks . a programmable voltage regulator 30 receives an auxiliary control signal from the data bus 32 and regulates the power from power source 34 accordingly . it generates and delivers a load voltage through a relay 38 to the duts for biasing the duts . the power source 34 also provides power to a voltage regulator 40 which is controlled by a programmable voltage controller 42 . the voltage regulator 40 , in response to the programmable voltage controller 42 , generates 2 voltages , v + and v drive at 44 , for the duts . to ensure consistent voltage delivery , the two voltages are remote sensed read back and monitored by the voltage regulator 40 via lines 46 . the driver card receives various types of information from the computer where the information is stored or processed accordingly by the various components , including the data buffer 50 , the decoder 52 , the control data buffer 54 , the id register 56 or the mode register 58 . the id register 56 identifies the tray ( or board ) id number , and the mode register places the board in the testing mode or the measurement mode . the data buffer 50 is connected to the driver card data bus 60 . the decoder 52 reading from the data buffer 50 and the control data buffer 54 provides instructions and data to other modules , including the programmable voltage controller 42 , the load gate controller 62 , the programmable frequency and duty cycle controller 64 , the switch controller 66 , the current source controller 68 for measurement purposes , and the multiplexer decoder 70 for operating multiplexer 72 . the programmable voltage controller 42 , as explained previously , controls the voltage regulator 40 which provides power to the duts . the load gate controller 62 operates to open or close the relay 38 for introducing the load potential to the duts . this relay 38 can be controlled by the programmable voltage controller 42 as well . the programmable frequency and duty cycle controller 64 provides a first current level for controlling the desired duty cycle and a second current level for controlling the desired frequency . the current levels are provided to amplifier sets 74 , where a set of amplifiers is provided for each of the duts such that there is at least an amplifier for amplifying the duty cycle current level and an amplifier for amplifying the frequency current level . in the preferred embodiment , there are eighteen duts on the dut board and therefore eighteen sets of dut amplifiers for a total of thirty - six amplifiers . for establishing the connections for measuring the test structures of the duts , referring to measurement subcircuit 51 , there are two control switches which are cmos switches operated by the switch controller 66 . the current source controller 68 provides a reference current for measurement purposes . it is a constant voltage output device that converts the readings for the dut devices into a current measurement to determine the resistance of the structure being tested or measured . for each dut , there are four monitor points for the high side 74 and four monitor points for the low sides 77 for monitoring the four test structures within each dut . all of the signals from the monitored points are selectively provided via multiplexer 72 to a differential amplifier 78 and passed to an analog multiplexer 80 . multiplexer 72 is operated by mux decoder 70 which receives instructions and data via the data bus 60 as to which of the duts and which of the test structures within the selected dut is to be monitored . the analog multiplexer 80 is operated by switch 88 and receives a number of signals as inputs for monitoring / feedback purposes , including the supplied voltage levels as indicated at 82 , frequency and duty current levels at 84 , and reference current source at 86 . the output of the analog multiplexer 80 is amplified via amplifier 87 and selected via a signal from the data bus 32 through switch cmos controller 88 . in effect , the analog measurement is multiplexed and amplified ( buffered ) for the system . as is illustrated , the dut board is provided with a load voltage potential 39 , v + and v drive voltage levels indicated at 44 , current levels indicated at 76 for setting the frequency and duty cycle , and switch signals at 67 . in operating the duts , the driver card monitors the voltage signal 46 and measures signals generated by the test structures of the duts 74 and 77 . referring to fig4 the general layout of a preferred dut board is illustrated . in the preferred embodiment , there are eighteen sockets for placement of duts on the board 100 where each dut is connected to a data bus 102 via auxiliary circuitries ( a 101 - a 118 ). the data bus is connected to a connector 104 for connection to the driver card . it should be noted that unlike the prior art , there is no limit as to the number of duts that can be placed on a board because of the advantageous method of the present invention in controlling and operating the duts . referring to fig5 the connections to a dut 110 for one test structure is illustrated along with its auxiliary circuitry 111 , noting that a dut may contain several test structures and additional monitor lines would be needed in those cases . the dut 110 is connected to the signal bus 102 via a number of signal lines . there is a line for receiving signal , i d , for controlling the duty cycle to be generated by the oscillator 106 , and a line for receiving signal i f for controlling the frequency of the duty cycle of the oscillator 106 . the oscillator 106 is powered by v + , a dc voltage . the output of the oscillator 106 is provided to an amplifier 108 powered by v drive , and the output of the amplifier is connected to the test structure 109 . traces for measuring the two ends of the test structure is connected when switches s h and s l are closed . the switches are cmos switches with respective drain , source , and gate terminals . the signal obtained from the test structure via the cmos switch is passed to or through a multi - purpose analog - to - digital ( a / d ) converter 107 , where the signal can be passed through without alteration or it can be converted to digital format and passed on to the bus . the advantage of converting the signal to digital format is to avoid the deterioration of the signal when it reaches the driver card . the a / d converter in response to a control signal from line 124 can process the signal from the test structure and generate digital information such as frequency count , duty cycle , etc . the digital output is delivered to the bus via lines 120 and 122 , where each line can consist of several data bus signal lines for the deliverance of the digital data . a voltage potential , v l , can be applied to the test structure to bias it . in operation , i f and i d dictates the duty cycle and the frequency to be generated by the oscillator 106 . the output of the oscillator 106 is amplified and provided to the test structure 109 , which can be biased by applying a voltage potential , v l . with this method where i d and i f are at steady dc levels , the test structure can be precisely excited to the desired state without having to be concerned with deterioration of the signal for exciting the test structure . there are many different types of test structures that may be examined . fig6 a illustrates a simple interconnection with two measurement points , m l and m h , where there is a slight amount of resistance within the interconnection . the concern here is with electromigration . electromigration ( em ) is the transport of metal ions through a conductor resulting from the passage of direct electrical current . it is a combination of thermal and electrical effects on mass motion . the higher the temperature , the easier it is for the metal ions to electromigrate . the presence of electric field further pushes the ions in the test structure . by examining the test structures under various conditions , the median time to failure ( mtf ) of the test structure can be determined . other types of test structures maybe tested as well , including testing for hot carrier effect and time - dependent dielectric breakdown condition of the transistors . in the reverse - bias drain - to - substrate junction , the electric field may be quite high in short - channel devices . carriers that are injected into the depletion layer are accelerated by the high field , and some of them may gain enough energy to cause impact ionization . these carriers have higher energy than the thermal energy and are called hot carriers . the holes generated by multiplication can flow to the substrate , giving rise to a large substrate current . some of the holes may find their way to the source , effectively lowering the source barrier to induce electron injection . the electrons generated in the drain depletion layer are attracted to the positive gate voltage . if these electrons exceeds certain ev , they may be able to tunnel into the oxide or to surmount the silicon - oxide potential barrier to produce a gate current . in either case , electrons can be trapped inside the gate oxide , thus changing the threshold voltage and the current - voltage characteristics . this is not desirable and should be avoided . the drain current can be easily measured by using the method of the present invention by first exciting the transistor to certain threshold and measuring the resistance at the appropriate terminals of the transistor . fig6 b and 6 c illustrate two ways of connecting to a transistor structure to measure for the hot carrier effect . oxide breakdown is an important process reliability subject in the development of mos and cmos technologies . oxide breakdown is described by the test methods used to cause the dielectric breakdown . in time - dependent dielectric breakdown ( tddb ) a constant voltage is applied across the gate oxide at a given temperature . the leakage current across the gate oxide is monitored , and the time to breakdown is recorded when the current exceeds some value . fig6 d and 6 e illustrate two ways of connecting to a transistor for measuring for the tddb condition . while the present invention has been described with reference to a certain preferred embodiment , it is to be understood that the present invention is not to be limited to such specific embodiments . rather , it is the inventor &# 39 ; s intention that the invention be understood and construed in its broadest meaning as reflected by the following claims . thus , these claims are to be understood as incorporating and not only the preferred embodiment described herein but all those other and further alterations and modifications as would be apparent to those of ordinary skill in the art .