text: fig1 shows a precharge circuit for pairs of bit lines of a pseudo - sram according to the invention . fig2 is a time chart illustrating a precharge operation by the precharge circuit of fig1 . the precharge circuit in this embodiment comprises a number of bit - lines pairs 1 , an hv cc generating circuit 3 which is connected to the bit - line pairs 1 via a common line 2 , and an intermediate level generating circuit 4 , as shown in fig1 . each of the bit - line pairs 1 includes two bit lines 1a and 1b to which a number of memory cells ( not shown ) are connected . the potential of high level or low level of a selected memory cell is read to the two bit lines 1a and 1b . the two bit lines 1a and 1b are connected to each other by a mosfet 1c which is turned on by a control signal a . the two bit lines 1a and 1b are also connected to the common line 2 respectively via mosfets 1d and 1e which are turned on by a control signal b . the hv cc generating circuit 3 generates a potential level of hv cc which is half of the supply voltage of v cc by potential dividing resistors r 1 and r 2 which have the same resistance values . the generated potential level of hv cc is output through a current mirror circuit . the hv cc generating circuit 3 is connected to the common line 2 via a mosfet 3a which is turned on by a control signal c . the control signal c is set active in the normal mode , and inactive ( or cut ) in the self - refresh mode . the intermediate level generating circuit 4 generates an intermediate potential level which is lower than the potential level of hv cc by potential dividing resistors r 3 and r 4 . the resistance value of the resistor r 3 is higher than that of the resistor r 4 . the generated potential of intermediate level is output through a current mirror circuit . a drain terminal of a mosfet 4a on the output side of the current mirror circuit is grounded via a mosfet 4b which is turned on by a control signal d . therefore , during the off state of the mosfet 4b , the mosfet 4a on the output side of the current mirror circuit does not function , but only a mosfet 4c functions . the control signal d is usually cut and is set active only in the last and short period of the precharge period in the self - refresh mode . the operation of the precharge circuit used in the pseudo - sram having the above - mentioned configuration will now be described . in the normal mode , the control signal c is set active and the control signal d is set inactive ( or cut ). as a result , the potential level of the common line 2 is fixed at the potential level of hv cc . during the precharge period in the normal mode , the control signals a and b are set active so that the bit lines 1a and 1b of the bit - line pairs 1 are connected to the common line 2 . accordingly , the precharge potential level is fixed at the potential level of hv cc and the operation is performed as in the prior art . when the pseudo - sram is in the self - refresh mode , the control signal c is inactive ( or cut ) and the hv cc generating circuit 3 is disconnected from the common line 2 by the mosfet 3a which is turned off . the control signal d is usually inactive ( or cut ). when the refresh action is terminated and the next precharge period is started , the control signals a and b are set active . as a result , the bit lines 1a and 1b of each bit - line pair 1 are shorted and connected to the common line 2 . as shown in fig2 the potential levels of the bit lines 1a and 1b are first at a v cc level and a gnd level , respectively . the potential levels are rapidly varied to the vicinity of the potential level of hv cc so as to be common . in accordance with the pseudo - sram of the invention , thereafter , the common potential level is gradually dropped by natural discharge since the hv cc generating circuit 3 is disconnected from the common line 2 by the mosfet 3a during the precharge period in the self - refresh mode . in a case where the common potential level of the bit lines 1a and 1b is rapidly dropped , for example as represented by a symbol α in fig2 the common potential level reaches the intermediate level within the precharge period . in accordance with the pseudo - sram of the invention , the common potential level of the bit lines 1a and 1b is to be dropped below the intermediate level , the mosfet 4c in the intermediate level generating circuit 4 is turned on . accordingly , the intermediate level generating circuit 4 maintains the common potential level at the intermediate level or larger via the common line 2 . a symbol β in fig2 for example , represents a potential profile in a case where the common potential level of the bit lines 1a and 1b is slowly dropped . if the common potential level is kept to be dropped as it is , the common potential level does not reach the intermediate level even at the end of the precharge period . when the control signal d is set active in the last and short period of the precharge period , the mosfet 4b of the intermediate level generating circuit 4 is turned on . as a result , the mosfet 4a of the current mirror circuit is turned on , and the intermediate level generating circuit 4 forcedly drops the common potential level of the bit lines 1a and 1b via the common line 2 . as a result , the common potential level is fixed at the intermediate level by the intermediate level generating circuit 4 . in both the cases , the bit lines 1a and 1b are precharged to the intermediate potential level before the precharge period is terminated and the next refresh cycle is started . generally , since the common potential level of the bit lines 1a and 1b is rapidly dropped by natural discharge during the precharge period as represented by the symbol α , the mosfet 4c in the intermediate level generating circuit 4 consumes a little power to supply the potential level against the natural discharge . in the case where the common potential level of the bit lines 1a and 1b is slowly dropped , the common potential level is already dropped to some degree by natural discharge by the time when the control signal d is set active . accordingly , the power consumption for forcedly dropping the common potential level down to the intermediate level is low . as described above , according to the embodiment of the present invention , during the precharge period in the self - refresh mode , the bit lines 1a and 1b of each bit - line pair 1 are precharged to the intermediate potential level which is lower than the potential level of hv cc . therefore , a sufficient margin can be ensured even when the high level potential of the memory cell is dropped due to the leak current . moreover , since , during the precharge period the self - refresh mode , the potential levels of the bit lines 1a and 1b are dropped by natural discharge , the power consumption is not increased . accordingly , the time period of the refresh cycle of the pseudo - sram can be made longer and the data can be retained for a long time with low power consumption . in the precharge circuit in the above embodiment , when the control is performed in such a manner that only the control signal a is set active and the control signal b is inactive ( or cut ) during the precharge period in the self - refresh mode , the bit lines 1a and 1b of each bit - line pair 1 are shorted and the potential levels of the bit lines 1a and 1b can be dropped below the potential level of hv cc by natural discharge . however , if the potential levels of the bit lines 1a and 1b are forcedly fixed at the intermediate level by the intermediate level generating circuit 4 as in the embodiment , it is possible to eliminate such possibilities that a margin with respect to the high level potential of a memory cell is insufficient due to the insufficient potential drop by natural discharge , or that a margin with respect to the low level potential of a memory cell is insufficient due to an excessive potential drop . as apparent from the above description , according to the pseudo - sram of the invention , the precharge potential level can be dropped to a level lower than the potential level of hv cc without extra power consumption . therefore , it is possible to make the time period of the refresh cycle in the self - refresh mode longer , so as to reduce the power consumption in the waiting state of the pseudo - sram . various other modifications will be apparent to and can be readily made by those skilled in the art without departing from the scope and spirit of this invention . accordingly , it is not intended that the scope of the claims appended hereto be limited to the description as set forth herein , but rather that the claims be broadly construed .