text: an embodiment of the present invention is directed to a method for coating a front face of a substrate such as a thermal ink jet printhead by high density remote plasma enhanced chemical vapor deposition ( pecvd ) using fluorocarbon precursor gases . the precursor gases may include aliphatic fluoroalkanes and / or cyclical or unsaturated fluorocarbons . an embodiment of this invention is directed to a substrate such as a thermal ink jet printhead comprising , on the front face , a layer such as diamond like carbon or other organic material whose surface is capable of being modified by exposure to species created within the plasma and subsequently further coated by these species if so desired . depending on the chemical nature of the precursor gas or gases , etching and surface modification of the substrate can be accomplished in addition to the deposition of a thin film . furthermore , the substrate temperature , chamber pressure , frequency and level of electrical excitation and gas flow rate ( s ) may determine the composition and properties of the deposited layer . using routine experimentation , one of ordinary skill in the art could adjust these factors in order to achieve the desired results . in an embodiment of the present invention , high density remote plasma processing techniques are used to selectively dissociate the fluorocarbon source into reactive radical species , which may then passivate active bonding sites on the surface of the substrate . this can be accomplished by any remote plasma processing technique or apparatus utilizing a high density plasma source . for example , microwave plasma , microwave plasma coupled with electron cyclotron resonance ( ecr ), inductively coupled plasma or helicon wave generators , or the like are suitable . a preferred remote high density plasma technique is the microwave / ecr plasma technique . one configuration of a typical remote high density pecvd system is referred to as a downstream microwave / elecron cyclotron resonance ( ecr ) system and is available for example from plasma - therm i . p ., inc ( st . petersburg , fla .) under the model number slr770 - ecr . such a system is shown in fig3 . an electrode plate 1 is positioned in a lower vacuum chamber 6 with a gas dispersal ring 7 located thereover . the height of the low gas dispersal ring 7 is adjustable . the substrate 10 to be coated is placed in contact with the electrode plate 1 . in an upper chamber 2 , referred to as the microwave cavity , above and in communication with the lower chamber 6 , a microwave generator 3 ( operating at typically 2 . 45 ghz ) coupled to a wave guide 4 and tuner 5 is used to maintain a plasma . adjustable magnets 12 are used to couple the applied electric field with a magnetic field resulting in an electron cyclotron resonance ( ecr ) condition . in this state , electrons spiral within the upper chamber 2 with lower escape rates to the walls thereby resulting in a higher density of excited species ( ion densities of about 3 × 10 11 / cm 3 ) than is typically obtained in a non - ecr condition ( ion density of about 1 × 10 10 / cm 3 ). once created , these species are transported to the lower chamber 6 ( typically by diffusion ) where they interact either directly with the substrate 10 or with gas ( es ) introduced through a lower gas ring 7 to produce a second set of excitation / dissociation reactions . an electrical potential ( typically 13 . 56 mhz ) may be applied using generator 11 to the electrode plate 1 in order to independently electrically bias the substrate 10 . secondary lower magnets 13 that are independently controlled my also be used to direct ions created in the microwave plasma 9 to the substrate 1 to influence the film properties . control of substrate temperature may be provided by either resistive heater or fluid exchange methods . chamber pressure is held constant through appropriate vacuum throttling methods . fluorocarbon precursor gases may be introduced into the upper chamber 2 through gas inlet 8 where they are dissociated by the microwave plasma 9 and subsequently transported to the substrate 10 area via diffusion . radical species with sufficient lifetime reach the substrate where surface modification may occur . alternatively , fluorocarbon precursor gases may be introduced into the lower chamber 6 through the gas ring 7 while a noble gas such as argon or helium is introduced into the microwave cavity 2 through gas inlet 8 . specific reactions that are enabled by the noble gas metastable energies that are available result in the preferred chemical species and bonding states at the substrate surface . the level of rf substrate bias may be independently controlled using generator 11 . this adjustable bias and the fact that the fluorination occurs outside ( remote or downstream ) from the high energy plasma in the upper chamber allows for the minimization of surface reactions that can lead to non - favorable bonding configurations . this in combination with the other operating parameters can lead to unique film properties that are not obtainable with direct plasma fluorination methods where electron energies are so dispersed and unfavorable surface reactions so prevalent . the high frequency ( microwave ) plasma coupled with the ecr technique provides for the creation of selective species that lend themselves to excellent film properties , such as mechanical durability . the high frequency remote processing method results in a surface layer modification ( of diamond - like carbon or some other organic substrate material ) having not only high fluorine concentration , but fluorine bonding that yields maximum ink repellency ( cf 2 and cf 3 type bonding ) with the additional benefit of being extremely durable ( due to crosslinking with the substrate ). if the process is continued for suitably long time periods ( such an several hours ) a thin fluoropolymer film is deposited , but the surface modified layer remains at the interface between the film and substrate providing exceptional mechanical durability . by adjusting the plasma processing parameters , a fluoropolymer layer can be prepared with a significantly higher f / c ratio and wherein more of the fluorine exists in the cf 2 and cf 3 states , as cared to layers produced by processes of the prior art . in particular , by the method of the present invention , a plasma deposited fluoropolymer layer can be made wherein the f / c ratio in preferably from about 1 . 0 to about 2 . 5 . more preferably , the f / c ratio is from about 1 . 2 to about 2 . 1 , and even more preferably is from about 1 . 7 to about 2 . 1 . in addition , the combined amount of cf 2 and cf 3 bonding may be from about 25 to about 100 %; preferably from about 50 to about 100 %; and more preferably from about 75 to about 100 %. in addition , because the fluoropolymer layer of the present invention is incorporated into the matrix of the organic substrate material and is not merely a soft fluoropolymer film deposit , improved coating lifetime can be realized . for example , using an embodiment of the present invention , a fluoropolymer layer of thickness of less than 30 angstroms can be formed on the surface of a substrate material through surface modification that has better coating lifetime than a pure fluoropolymer deposit as prepared using conditions of the prior art . further deposition of a fluoropolymer film may occur on top of this surface treated fluoropolymer layer . the combination of this surface modified layer and the subsequently coated fluoropolymer film can be characterized by the effective thickness of fluorine from the top surface of the film to its final point of detection in the matrix of the substrate through analytical means . this effective thickness may range from greater than 0 angstroms to less than 5000 angstroms . preferably , this effective thickness ranges from 10 angstroms to 2500 angstroms . more preferably , this effective thickness ranges from 10 angstroms to 100 angstroms . the films of the present invention have higher advancing and receding contact angles for water and typical thermal ink jet inks , such as that contained in the print cartridge of the xerox model 4004 thermal ink jet printer , herein referred to as xerox ink , than known plasma modified films , such as fluorinated diamond - like carbon as described in u . s . pat . no . 5 , 073 , 785 . a contact angle measures the degree of beading of a liquid on a surface . a higher advancing contact angle indicates that a liquid will preferentially not wet the surface . a higher receding contact angle indicates that there will be easier removal of the liquid from a surface if it has been initially wetted . as a result , when using the layers of the present invention , for example as front face coatings for thermal ink jet printheads , ink will be discouraged from wetting the face of the printhead . moreover , even if the film has been wetted by initial jet firings , a smaller amount of the ink will remain on the surface of the face due to more efficient retraction back into the nozzle openings . by the method or the present invention , a plasma deposited fluoropolymer layer can be made wherein the advancing contact angle with xerox ink is between 60 and 180 degrees ; preferably between 80 and 180 degrees ; and more preferably between 100 and 180 degrees . the receding contact angle with xerox ink is between 50 and 180 degrees ; preferably between 70 and 180 degrees and more preferably between 90 and 180 degrees . because of its high contact angles , the fluoropolymer layer of the present invention is particularly useful for segmented thermal ink jet devices that are capable of simultaneously printing with two or more different color inks . in segmented devices when printing with two colors , for example , each color occupies one - half of the die . when the segmented devices are used , ink mixing on the front face due to wetting may result in spots on the print medium that are not homogeneous . because of the decrease in the amount of ink remaining on the film of the present invention , segmented devices utilizing the films may have less ink mixing . the fluoropolymer film of the present invention may also be utilized in other printhead devices / formats such as full - width , piezoelectric , high speed , etc ., printhead devices . the coating layer and process of the present invention are further defined by reference to the following illustrative examples . contact angle measurements using the above - mentioned xerox ink and x - ray photoelectron spectroscopy ( xps ) surface composition analysis are performed to monitor the composition and ink repellency properties of the various examples . results are tabulated in tale 1 . evaluation of mechanical durability is performed using a test where contact angle is periodically monitored after an eslastomer wiper blade material ( in this case polyurethane ) has passed continuously over the surface of the fluoropolymer films . results of such a test are obtained for the films of several of the examples and shown in fig4 a and 4 b for different processing conditions and 5 a and 5 b for different substrate materials . a lay of surface fluorinated diamond - like carbon is coated on crystalline silicon ( c - si ) wafers according to the process of u . s . pat . no . 5 , 073 , 785 . the wafers are fixed in on appropriate support of a pecvd chamber such as that supplied by plasma - therm ip , inc . ( st . petersburg , fla .) under model no . waf &# 39 ; r batch 700 . the vacuum chamber is then evacuated to 1 mtorr and purged with n 2 for one hour while the substrates are heated to 250 ° c . after obtaining a base pressure of 1 × 10 − 4 torr , n 2 o is flowed into the chamber at a rate of 20 standard cubic centimeters per minute ( sccm ) and the pressure is allowed to stabilize at 200 mtorr . radio frequency ( rf ) power ( 13 . 56 mhz ) is then applied to the lower electrode ( substrate table ) at a level of 120 w for 30 minutes . this process cleans the substrate of organic residue and promotes adhesion of the subsequent deposited diamond - like carbon film . upon termination of the rf power , the n 2 o gas flow is discontinued and replaced by a mixture of c 2 h 4 and ar at a flow ratio of 30 : 15 sccm . the pressure in allowed to stabilize at 200 mtorr and 100 w rf power is applied to the lower electrode for 10 minutes to allow for diamond - like carbon film growth ( 0 . 25 μm ). upon termination of the rf power , the c 2 h 4 and ar gas flows are discontinued and cf 4 is introduced into the vacuum chamber and the pressure is allowed to stabilize at 300 mtorr . radio frequency power at 75 w is applied to the upper electrode for 30 seconds creating plasma that modifies the surface of the diamond - like carbon layer rendering it stable and hydrophobic . after purging for several minutes , the system is vented and the samples evaluated . the results are presented in table 1 and fig4 a and 4 b . in this comparative example a fluoropolymer film is deposited by a low density direct plasma method as taught in copending patent application ser . no . 08 / 369 , 439 . crystalline silicon substrates coated with diamond - like carbon on prepared in comparative example 1 are placed in a pecvd chamber of a system such as that supplied by plasma - therm i . p ., inc . ( st . petersburg , fla .) under the model no . waf &# 39 ; r batch 700 . in this case however the layer of surface fluorination provided by the cf 4 plasma in comparative example 1 has not been done . the chamber is evacuated to 1 mtorr while it is purged with n 2 for 4 hours and the substrates are heated to 100 ° c . after reaching a base pressure of 1 × 10 − 4 torr , 20 sccm of c 2 f 4 ( tetrafluoroethylene ) are introduced into the chamber and the pressure is allowed to stabilize at 200 mtorr . radio frequency power ( 13 . 56 mhz ) at 20 w in applied to the upper electrode for 30 minutes resulting in the deposition of 0 . 25 μm of fluoropolymer film on the substrates . upon termination of the rf power , the system is purged for several minutes and then vented to allow for sample evaluation . the plasma - therm slr - 770 ecr system available from plasma - therm i . p ., inc . ( st . petersburg , fla .) as shown in fig3 is used for high density remote plasma fluoropolymer layer deposition . substrates are c - si pieces coated with diamond - like carbon as prepared in comparative example 2 . substrate temperature is maintained at 40 ° c . argon ( 20 sccm ) is introduced into the ecr section of the upper chamber through gas inlet 8 . the gas dispersal ring 7 in the lower chamber 6 is placed 2¼ ″ above the plane of the substrate table 1 . hexafluoropropylene ( c 3 f 6 ) is introduced through the gas ring 7 at 5 sccm . the chamber pressure is held constant at 75 mtorr . an rf bias of 1 w is applied to the substrate table using rf generator 11 . the electromagnets 12 are set at 150 å to induce the scr condition . the lower magnets 13 are set at 0 å . a microwave power of 150 w is then applied for 10 minutes using generator 3 . after this time , the power and magnetic field is discontinued and the gas flows shut off . the resulting fluoropolymer layer measures 20 angstroms . results are shown in table 1 and fig4 a and 4 b . the plasma - therm slr - 770 ecr system as shown in fig3 is used for fluoropolymer layer deposition . substrates are c - si pieces coated with diamond - like carbon as prepared in comparative example 2 . substrate temperature is maintained at 40 ° c . argon ( 10 sccm ) is introduced into the ecr section of the upper chamber through gas inlet 8 . the gas dispersal ring 7 in the lower chamber 6 is placed 2¼ ″ above the plane of the substrate table 1 . perfluoropropane ( c 3 f 6 ) is introduced through the gas ring 7 at 10 sccm . the chamber pressure is hold constant at 75 mtorr . an rf bias of 1 w is applied to the substrate table using rf generator 11 . the electromagnets 12 are set at 150 å to induce the ecr condition . the lower magnets 13 are set at 0 å . a microwave power of 150 w is then applied for 10 minutes using generator 3 . after this time , the power and magnetic field is discontinued and the gas flows shut off . the resulting fluoropolymer layer measures 20 angstroms . results are shown in table 1 . the plasma - therm slr - 770 ecr system as shown in fig3 is used for fluoropolymer layer deposition . substrates are c - si pieces coated with diamond - like carbon as prepared in comparative example 2 . substrate temperature is maintained at 40 ° c . perfluoropropane ( c 3 f 6 ) is introduced into the ecr section of the upper chamber at 10 sccm through gas inlet 8 . no gas is introduced through the gas ring 7 . the chamber pressure ii held constant at 90 mtorr . an rf bias of 1 w in applied to the substrate table using rf generator 11 . the electromagnets 12 are set at 150 å to induce the ecr condition . the lower magnets 13 are set at 0 å . a microwave power of 150 w is then applied for 10 minutes using generator 3 . after this time , the power and magnetic field is discontinued and the gas flows shut off . the resulting fluoropolymer layer measures 30 angstroms . results are shown in table 1 and fig4 a and 4 b . the process or example 3 is carried out , but with bare crystalline silicon as the substrate 10 with no diamond - like carbon intermediary layer . results are shown in table 1 and fig5 a and 5 b . the resulting fluoropolymer layer measures 20 angstroms . the process or example 3 is carried out , but with a spin coated layer of polyimide on crystalline silicon as the substrate material 10 . results are in table 1 and fig5 a and 5 b . the resulting fluoropolymer layer measures 30 angstroms . the process of example 3 is carried out , but with a layer of fluorinated diamond - like carbon as prepared in comparative example 1 as the substrate 10 . results are shown in table 1 and fig5 a and 5 b . the resulting fluoropolymer layer measures 30 angstroms . compared to the material of comparative example 1 where the fluorination is accomplished using a direct cf 4 plasma , the high density remotely fluorinated samples ( examples 1 through 6 ) all have higher fluorine content and increased concentration of preferred cf 2 and cf 3 type bonds . this results in higher contact angle values and ultimately better effectiveness as a thermal ink jet front face coating . although the ink repellency of the fluoropolymer film of comparative example 2 is excellent at the start of the mechanical durability test , it quickly degrades as the mechanically poor film is abraded away by the wiper blade material . the surface fluorinated layer of comparative example 1 has much lower ink repellency than the fluoropolymer film of comparative example 2 due to the relative fluorine deficiency . stability of the ink repellency however is improved compared to the fluoropolymer film of comparative example 2 because the fluorine which is incorporated in the surface layer is directly bonded to the mechanically durable diamond - like carbon matrix and is not in the form of a poorly cross - linked polymer . by comparison , the high density remotely deposited layers of examples 1 and 3 provide excellent ink repellency at the start of the test due to their high concentration of cf 2 and cf 3 at the surface and show excellent long term durability because these species are able to chemically bond at the surface of the substrate due to the benefits of the current process . table 1 indicates that the initial ink repellency of the fluoropolymer film deposited in examples 3 through 6 is independent of substrate nature except for the polyimide substrate . this is due to the presence of a thin , but homogeneous film at the surface , similar to what is prepared in comparative example 2 . however as this film is abraded away in the mechanical durability test ( fig5 a and 5 b ), the substrate becomes critically important and ultimately determines the long term properties of the material . crystalline silicon ( example 4 ) does not form a stable surface layer when fluorinated in the plasma and thus has poor durability . long term performance is also degraded when a prefluorinated diamond - like carbon film is used as the substrate . this is to be expected because the fluorinated diamond - like carbon material has already been passivated with a cf 4 plasma , causing the unsaturated bonds to no longer be available when the microwave / ecr process takes place and hence , the poorer results . the polyimide substrate shows a higher advancing contact angle compared to the other substrates , but this is not due to differences in the fluoropolymer film at the surface ( as evidenced by the xps data ), but due to the nature of the polyimide substrate material being rougher than the other examples . even the diamond - like carbon substrate shows the initial drop in receding contact angle at the start of the test , but quickly stabilizes as the surface modified layer is reached . this data demonstrates that the microwave remote plasma process results in not just a simple fluoropolymer deposition ( otherwise it would wipe away easily as with the c - si substrate sample ) but also a surface modification of the substrate ( provided it is organic in nature ). this leads to enhanced durability while still providing much better hydrophobicity over just surface fluorinated diamond - like carbon coatings , due to the nature of the passivating species created in the microwave / ecr plasma . due to its ability to be effectively fluorinated and provide subsequent long term mechanical stability , diamond - like carbon is the preferred substrate material for high density remote plasma fluorination . it is apparent that the fluoropolymer films prepared using a remote microwave / ecr plasma method , have better ink repellency and durability than films obtained from the prior art . this repellency can be attributed to not only the higher concentration or fluorine , but also to the prudence of preferred bonding types , i . e ., cf 2 and cf 3 , resulting from the unique conditions of the microwave ecr plasma . because of its superior properties , the film of example 3 is a preferred embodiment of the present invention . xerox thermal ink jet die modules as are used in the xerox 4004 are used as substrates for a front - face coating while using processing conditions as in comparative example 1 , comparative example 2 and example 3 . after the respective front face coating processes are completed along with appropriate electrical and ink handling packaging , these devices are utilized in a printing process using the above - mentioned xerox ink contained in cartridges of a xerox model 4004 ink jet printer available from xerox corporation . observation of the front face during jet firing reveals significant flooding of the front face and pooling around the nozzles of the printhead of comparative example 1 . this results in poor directionality and smearing of the inks on the print paper . the front face of the die modules of comparative example 2 shows excellent front face ink repellency and subsequent print quality during initial stages of evaluation . however , following approximately 1000 wipe cycles in a maintenance station representative of that in the xerox 4004 printer , visible streaks appear in the fluoropolymer coating and ink wetting around the nozzles of the device is prominent . related degradation in print quality is observed . in contrast , the printhead with the high density rely fluorinated coating of example 3 results in no face flooding and virtually no wetting around the nozzle openings even when operating at up to 7 khz firing frequency . resulting print quality is excellent . this performance is maintained even after 10 , 000 wipe cycles in the maintenance station .