text: before describing in detail the particular method and apparatus for providing breakdown protection for a source follower circuit , it should be observed that the present invention resides primarily in a novel and non - obvious combination of elements and process steps . so as not to obscure the disclosure with details that will be readily apparent to those skilled in the art , certain conventional elements and steps have been presented with lesser detail , while the drawings and the specification describe other elements and steps pertinent to understanding the invention in greater detail . fig1 illustrates a source follower 10 comprising an nfet ( nmosfet ) 14 further comprising a body or well 14 b shorted to a source 14 s . it is known common practice to connect an nfet body ( a p - well region ) to the source . a drain 14 d is connected to a power supply vh . the source follower 10 receives an input signal at an input terminal 20 connected to a gate 14 g of the nfet 14 . an output terminal 22 is connected to ground through a resistor 23 . the source follower circuit 10 reproduces the input signal at the output terminal 22 with a voltage offset of about ( vth + veff ) ( typically about 0 . 8 volts ) and a gain of slightly less than unity . the source follower configuration is known to exhibit a relatively high input impedance and a relatively low output impedance . the source follower circuit is placed in an off state ( i . e ., turned off ) by grounding the input terminal 20 , which grounds the gate 14 g . when a first and a second source follower circuit are connected to drive a net from their respective output terminals , an output terminal of the first source follower ( such as the output terminal 22 ) is connected to an output terminal of the second source follower through the net circuit . see fig2 , for example , where source followers 25 and 27 ( comprising mosfets 29 and 30 ) drive a net 31 from respective output terminals v out1 , and v out2 . within the net 31 , the output terminals v out1 and v out2 are connected together so that one or the other of the source followers 25 and 27 can provide drive signals for the net 31 . the mosfets 29 and 30 are responsive to power supply voltages vh 1 and vh 2 , respectively , where vh 1 & lt ; vh 2 . when the source follower 27 is in an on state , the voltage at an output terminal 22 b is v out2 = vh 2 . if the source follower 25 is concurrently in an off state ( by grounding the gate terminal g of the mosfet 29 ), the source follower 27 pulls an output terminal 22 a of the mosfet 29 to a voltage v out1 = vh 2 ( due to the common connection within the net 31 ), which is higher than the voltage vh 1 . when the output terminal 22 a rises above the power supply voltage vh 1 , the normally reverse biased pn junction between the body b ( a p - type region ) of the mosfet 29 and the drain d ( an n - type region ) can become forward biased , causing current flow from the output terminal 22 b ( at the voltage vh 2 ), through the forward biased body / drain junction of the mosfet 29 into the power supply vh 1 . since the mosfet 29 is designed to operate with a power supply voltage vh 1 , the mosfet 29 can be damaged by driving the output terminal 22 a above the power supply voltage vh 1 . as the output terminal 22 a is pulled above vh 1 to vh 2 , the voltage between the gate g ( which is grounded since the mosfet 29 is off ) and the source s / output terminal 22 a may exceed the breakdown voltage of the gate dielectric . the same potentially damaging situation arises if the source follower 25 and a tristate driver are connected to drive the net 31 , i . e ., the output terminal 22 a is connected to an output terminal of a tristate push - pull driver ( not shown in fig1 ), with the tristate driver operating from a power supply voltage vh 3 greater than vh 1 . fig3 illustrates a pfet 33 configured as a source follower 32 . a source 33 s is connected to the power supply via the resistor 23 and to a body 33 b . it is common practice to connect the pfet body ( an n - well region ) to the highest available voltage . when driving a net such as the net 31 , the pfet source follower 32 is subject to the same potentially damaging conditions as the nfet source followers 25 and 27 described above . as is known in the art , a source follower can also be constructed using a junction field effect transistor ( jfet ) or a bipolar junction transistor , and thus the teachings of the present invention can be extended to such source follower implementations . fig4 illustrates a source follower breakdown protection circuit 40 according to the teachings of the present invention for overcoming certain potentially damaging operating conditions , including those described above for the source followers 25 and 27 in fig2 . the breakdown protection circuit 40 operates in one of three modes to control a source follower 42 by controlling connections to a gate 43 g , a well 43 b , a source 43 s and drain 43 d of an nfet 43 operating as the source follower 42 . the three operational modes comprise : an on state for the source follower , a first off state for the source follower when the voltage at the output terminal 22 is less than the power supply voltage vh , and a second off state when the voltage at the output terminal 22 is greater than the power supply voltage vh . table 1 below sets forth a state of the nfets and pfets of the source follower breakdown protection circuit 40 for each of the three operational modes . operation of the source follower breakdown protection circuit 40 in the source follower on state will be described first . for proper on - mode operation , the breakdown protection circuit 40 configures the drain 43 d , the gate 43 g , the p - well 43 b and the source 43 s of the nfet 43 to function as a conventional source follower , such as the source follower 10 of fig1 . configuration of these regions is controlled by the state of nfets 46 , 47 , 70 , 88 and 90 and pfets 48 , 56 and 68 as described below . to turn on the source follower 42 according to the first operational mode , an enable terminal 44 is set to a high state by an externally supplied signal , turning on the nfets 46 and 47 in response to the high voltage on the gates thereof , and turning off the pfets 48 and 56 in response to a high voltage on the gates thereof a node 64 is grounded through the source / drain path of the on nfet 46 , turning on the pfet 68 by grounding a gate thereof the grounded node 64 also turns off the nfet 70 by grounding a gate thereof with the pfet 56 and the nfet 70 both off ( i . e ., exhibiting an open source / drain current path ) the source follower 42 is on , as set forth in table 1 above , and the connection between the p - well 43 b and the gate 43 g is open , as required for normal source follower operation . since the pfet 68 and the nfet 47 are on , an input terminal 80 drives the gate 43 g , as required for normal on - mode operation of the source follower 42 . the source follower 42 responds to input signals applied at the gate 43 g as does the conventional source follower 10 illustrated in fig1 . as with a conventional source follower , if the input signal drives the gate 43 g to a voltage that is more than vt above vh , the source follower output will not be able to follow the input signal . a gate g of an nfet 88 is connected to the power supply voltage vh , turning on the nfet 88 , shorting the p - well 43 b to the output terminal 22 via the conducting source / drain ( s / d ) circuit of the nfet 88 . referring to fig1 , for an operational source follower the body 14 b of the mosfet 14 is connected to the output terminal 22 . thus the p - well 43 b is properly configured for source follower operation . because a gate g of an nfet 90 is tied to the output terminal 22 , the nfet 90 is off , isolating the p - well 43 b from the power supply vh , as required for proper operation of the source follower 42 . fig5 is a schematic illustration of certain components of the breakdown protection circuit 40 when the source follower 42 is in the on mode , i . e ., the source follower operates conventionally . in fig5 the on fets 47 , 68 and 88 are represented as short circuits and the off fets 56 , 70 and 90 are represented as open circuits . the configuration of fig5 is operationally identical to the conventional source follower 10 illustrated in fig1 , i . e ., the p - well 43 b is connected to v out and the input signal is supplied to the gate 43 g . to turn the source follower 42 off , the enable input 44 is driven low by an externally - supplied signal turning off the nfets 46 and 47 and turning on the pfets 48 and 56 . since the nfet 46 is off and the pfet 48 is on , the node 64 is high , which turns off the pfet 68 and turns on the nfet 70 . see table 1 above . with the nfet 47 and the pfet 68 both off , the connection between the input terminal 80 and the gate 43 g is open . also , since the pfet 56 and the nfet 70 are on , the gate 43 g is shorted to the p - well 43 b via the source / drain current path of the pfet 56 and the nfet 70 , turning off the mosfet 43 and thus the source follower 42 . as described above , the relationship among vh , vt and v out controls the two off modes of the source follower . in a first off mode the source follower is in an off state in response to the voltage at the output terminal 22 less than ( vh − vt ). in a second off mode the source follower is off in response to the voltage at the output terminal 22 greater than the ( vh + vt ). in an intermediate mode the output voltage v out is between ( vh − vt ) and ( vh + vt ). in the first off mode , ( v out & lt ; vh − vt ) a threshold condition for the nfet 88 is satisfied and the nfet 88 is turned on , shorting the p - well 43 b to the output terminal 22 . since the gate 43 g is shorted to the p - well 43 b as described above , the gate 43 g , the p - well 43 b and the source 43 s are shorted to the output terminal 22 . with the gate g of the nfet 90 tied to the output terminal 22 and the output voltage v out & lt ; vh − vt , the nfet 90 is turned off , isolating the p - well 33 b from the power supply vh . as described above with respect to the prior art , forward biasing of the pn junction between the body and the drain of a source follower is to be avoided to prevent current flow from the output terminal into the source follower power supply . with regard to the present invention , in the first off state condition ( v out & lt ; vh + vt or v out − vt & lt ; vh ), the pn junction between the drain 43 d ( the n - type region connected to the power supply vh ) and the p - well 43 b ( the p - type region connected to the output terminal 22 with a voltage v out − vt ) cannot be forward biased since the p - type region is at a lower voltage ( v out − vt ) than the n - type region ( vh ). fig6 is a schematic illustration of certain components of the breakdown protection circuit 40 , when the source follower is in the first off mode . fig6 represents the on nfets 70 and 88 and the on pfet 56 with short circuits . the gate 43 g is connected to the body or p - well 43 b through the source / drain path of the pfet / nfet 56 / 70 . the p - well 43 b is connected to the source 43 s and to the output terminal 22 through the source / drain of the nfet 88 . the nfet / pfet 47 / 68 depicted as open circuits , disconnect the gate 43 g from the input terminal 80 . the second off state condition occurs when v out is greater than ( vh + vt ). under these conditions the mosfet 90 turns on and the mosfet 88 turns off , shorting the p - well 43 b to the power supply voltage vh . the off state of the nfet 88 isolates the p - well 43 b from the output terminal 22 . since the gate 43 g remains connected to the p - well 43 b through the on transistors , pfet / nfet 56 / 70 , the mosfet 43 ( and the source follower 42 ) remains off . an input signal applied to the input terminal 80 cannot reach the gate 43 g due to the open nfet / pfet 47 / 68 . fig7 is a schematic representation of this state of the breakdown protection circuit 40 . noting that the source and drain of a mosfet are interchangeable , a terminal of the nfet 43 connected to the power supply vh is designated the source 43 s and a terminal connected to the output terminal 22 is designated the drain 43 d , which is a reversal of the terminal designations from fig5 and 6 . according to the prior art source follower , when the voltage at v out is greater than the voltage at the power supply vh ( or greater than the vh + vt ), current can flow into the power supply via the forward biased body / drain pn junction of the source follower mosfet , wherein the body ( p - type ) is connected to v out and the drain ( n - type ) is connected to the power supply . also , with the source connected to v out and the gate connected to ground ( since the mosfet is off ) the gate dielectric can breakdown due to excessive voltage ( i . e ., electric field intensity ) between the source and ground through the gate dielectric . according to the teachings of the present invention , these difficulties are avoided . current cannot flow from v out to the power supply vh through the body / drain junction of the mosfet 43 since the body or p - well 43 b is not connected to the output terminal 22 , but instead is connected to the power supply vh . with regard to possible breakdown of the gate dielectric , as can be seen in fig7 , the gate 43 g is tied to vh . thus the voltage v out can increase to the sum of vh and the breakdown voltage of the gate dielectric , before dielectric breakdown . according to the prior art , v out is limited to the dielectric breakdown voltage because the gate is at ground potential . thus the present invention provides additional margin with respect to limits on the voltage v out when the source follower is off . thus when the source follower 42 is off ( whether the voltage at the output terminal 22 is less than the power supply voltage ( vh − vt ), greater than ( vh + vt ) or between ( vh − vt ) and ( vh + vt ), the gate 43 g and the p - well 43 b are shorted by pfet / nfet 56 / 70 . the nfet 88 and the nfet 90 cooperate to short the gate 43 g and the p - well 43 b to whichever of the drain / source terminals 43 d / 43 s is at a lower voltage . by definition , the terminal to which the p - well 43 b and the gate 43 g are shorted is the source of the nfet 43 . use of the source follower protection circuit 40 allows the net 31 to drive the voltage at the output terminal 22 above or below the voltage of the power supply vh without damaging the source follower 43 , allowing use of source followers driven from different power supply voltages to drive the net without fear of source follower damage . in the intermediate mode when the voltage v out is between ( vh − vt ) and ( vh + vt ) both of the mosfets 88 and 90 are off and the p - well 43 b floats . if the p - well 43 b floats to a voltage below ( vh − vt ), the mosfet 88 turns on , connecting the p - well 43 b to the output terminal 22 . the mosfet 90 remains off . if the p - well 43 b floats to a voltage above ( vh + vt ), the mosfet 90 turns on , connecting the p - well 43 b to the power supply vh . the mosfet 88 remains off . the use of two parallel mosfets ( such as the nfet / pfet 47 / 68 pair and the nfet / pfet 70 / 56 pair ) are known in the art and commonly referred to as a pass gate or transfer gate . it is known that if only an nfet is employed to provide a closed path between its source and drain terminals , the nfet passes a signal having a voltage range from ground to ( vh − vt ). if only a pfet is used , the pfet passes a signal having a voltage range from ( ground + vt ) to the power supply voltage vh . using both a pfet and an nfet allows a signal from ground potential to vh to pass through the parallel mosfets . further with respect to the pass gates , according to the prior art it is known to connect the body of the pfet to the power supply and the body of the nfet to ground . however , this configuration is not necessarily required for the pass gates of the present invention ; in other embodiments the bodies can be tied to other voltages . although the present invention is described as comprising enhancement mode mosfets for the pass gates , in another embodiment depletion mode mosfets can be utilized , with corresponding circuit modifications as understood by those skilled in the art . in yet another embodiment , the pass gates are replaced by a low threshold voltage mosfet ( e . g ., having a threshold voltage of about 0 . 1 volts ) permitting either a pfet or an nfet to pass a signal having a voltage extending nearly the entire range from ground to vh . in still another embodiment other types of electronic ( e . g ., junction field effect transistors ), mechanical and nanotechnology devices can be used in place of the pass gate mosfets . one application for the breakdown protection circuit 40 of the present invention comprises a hard disk drive of a computer or other data storage device . in certain disk drives a source follower drives a load operative with the read / write head for improving the data reading and data writing process . the protection circuit of the present invention is used advantageously with the source follower to protect against the conditions as described above , that are known to occur according to prior art source followers . the breakdown protection circuit 40 can also be used in applications where the source follower power supply voltage is not fixed , but is variable as desired . changing the power supply voltage changes the relationship between vh and vout , possible leading to the damaging conditions described above . the source follower protection circuit 40 can protect the source follower against such conditions . in yet another embodiment , a source follower breakdown protection circuit 120 illustrated in fig8 comprises a power supply voltage vh ′ connected to the drain d of the mosfet 90 and to the gate g of the mosfet 88 . according to the embodiment of fig4 , the state of the mosfets 88 and 90 is determined by whether v out , is less than ( vh − vt ) or greater than ( vh + vt ). according to the embodiment of fig8 , vh is replaced by vh ′, which can be less than or greater than vh . thus the v out value at which the mosfets 88 and 90 change state is shifted by the difference between vh and vh ′. an architecture and process have been described as useful for a source follower breakdown protection circuit . specific applications and exemplary embodiments of the invention have been illustrated and discussed , and provide a basis for practicing the invention in a variety of ways and with a variety of circuit structures . numerous variations are possible within the scope of the invention . features and elements associated with one or more of the described embodiments are not to be construed as required elements for all embodiments . the invention is limited only by the claims that follow .