text: the invention constitutes a process of contacting a positive acting photoresist with a predip solution , rinsing the substrate , developing , rinsing and drying in order to obtain high contrast resulting in vertical profiles , high resolution capabilities , no unexposed resist film loss and good sensitivity . the compositions of the predip solution and developer solutions are critical to achieving the performance . the process is used with a diazonaphthoquinone - type photoactive compound and novolac resin based photoresist . typically , the photoresist is spin coated from solution on a silicon substrate or other such substrates used in the manufacture of integrated circuits or photomasks . the resist is then dried by baking at about 100 ° c . for about 30 minutes in a convection oven ; other baking processes , such as hot plate , will suffice . after the resist and substrate have cooled , the resist is irradiated by ultraviolet light or other actinic radiation to form a pattern of exposed and unexposed resist . the resist coated substrate is then contacted with the predip solution for a time from 0 . 5 seconds to 30 minutes , more preferably from 10 seconds to 2 minutes , and most preferably one minute . the predip solution consists of , but is not limited to , an organic base and quaternary ammonium surfactant . the base used in the predip solution may be selected from water soluble organic bases but more preferably from te trame thylammonium hydroxide , ( 2 - hydroxyethyl ) trimethylammonium hydroxide and tetra -( 2 - hydroxyethyl ) ammonium hydroxide but most preferably tetramethylammonium hydroxide . the concentration of the base in the predip solution should be between 0 . 001 to 0 . 5 n or more preferably from 0 . 05 to 0 . 3 n . the surfactants that can be used in the predip bath include compositions such as : ## str1 ## where r 3 is a cyclic group of from 2 to 6 carbons with from 0 to 3 heteroatoms chosen from the group o , n and s provided that each heteroatom is not bonded to another or a quaternary nitrogen . r l are saturated or unsaturated , straight or branched hydrocarbon chains of from 6 to 20 carbons . r 2 is the same as r l except has 1 to 120 carbon atoms . x - may be cl - , i - , br - , ch 3 so 4 - or ch 3 ch 2 so 4 - . an example of a member of this class is example a in table i . other surfactants that can be used in the predip bath include compositions such as : ## str2 ## where r 1 and r 2 are as described above ; r 3 is an alkyl group of between 1 and 4 carbons ; and r 4 is a saturated or unsaturated straight or branched hydrocarbon chain of from 1 to 4 carbons , 1 to 4 quaternary ammonium groups of the formula : wherein r 5 is a saturated or unsaturated straight or branched hydrocarbon chain of from 1 to 20 carbons , r 6 and r7 are the same or different and each is an alkyl group of from 1 to 4 carbons , or phenalkyl wherein the alkyl moiety has from 0 to 3 carbons . examples of members of this class are example b and example c in table i . other surfactants that can be used in the predip bath include compositions such as : ## str3 ## where r 3 is a hydrocarbon chain derived from coconut oils . r 1 and r 2 are hydroxy alkyl groups containing between 1 and 4 carbons . an example of this class of compound is example d in table i . the concentration of cationic surfactant in the predip bath may be from 0 . 0001 to 1 . 0 % by weight of the predip bath . the preferred concentration range is between 0 . 001 and 0 . 75 % and the most preferred range is between 0 . 01 and 0 . 25 %. the substrate is then rinsed for a minimum period of time preferably greater than 10 seconds with deionized water and more preferably for one minute . the substrate is then contacted with the developer solution until the resist that received proper exposure has dissolved cleanly away with no unexposed resist loss and more preferably for at least 10 seconds and most preferably more than 60 seconds . the developer solution consists of , but is not limited to , an organic base and fluorocarbon surfactant . the base used in the developer solution may be selected from water soluble organic bases , and more preferably tetramethylammonium hydroxide , ( 2 - hydroxyethyl ) trimethylammonium hydroxide and tetra -( 2 - hydroxyethyl ) ammonium hydroxide , but most preferably tetramethylammonium hydroxide . preferably , the base in the developer and in the predip are the same . the surfactants that can be used in the developer bath are those characterized by formula : where y is a a radical selected from the group -- ch 2 ch 2 o --, -- so 2 nr &# 39 ;--, -- so 3 --, -- so 2 n ( r &# 39 ;) ch 2 co 2 --, -- co 2 -- and -- co -- nr &# 39 ;-- wherein r f is either a straight or branched chain of the formula c p f 2p + 1 where p is an integer from 3 to 17 ; and wherein r is hydrogen or an acyl or alkyl radical of 1 to 30 carbon atoms and m is an integer of 2 to 26 and preferably where m is an integer of 5 to 26 , and r &# 39 ; is hydrogen or an alkyl radical of 1 to 6 carbon atoms . the surfactant in the developer may be selected from those mentioned above but more preferably from those in table ii and most preferably example a from table ii . the developer bath operates at a ph of at least 9 and preferably at a ph above about 10 . 5 and most preferably above a ph of 12 . the concentration of the organic base in the deveioper must be varied dependining on the solubility characteristics of the photoresist and on the developing process in order to obtain the desired sensitivity without unexposed photoresist film loss . the concentrations of the base in the developer solution should be between 0 . 05 to 1n or more preferably from 0 . 1 to 0 . 5 n . the concentration of fluorocarbon surfactant in the developer may be in the range from 0 . 001 to 5 % by weight of the total developer solution . the preferred range is 0 . 005 to 2 %. the following examples are illustrative of the invention . the enumeration of details in the examples should not be interpreted as a limitation on the invention except as may be expressed in the appended claims . the wafers were coated , prebaked and exposed in a conventional manner . the following is provided as typical . the photoresist coating was prepared by spin coating the resist solution on a silicon wafer substrate . the silicon wafer had been subjected to a 200 ° c . dehydration bake for sixteen ( 16 ) hours ; and then treated with a 50 % hexamethyldisilazane solution in xylene for twenty seconds immediately prior to applying the photoresist for coating . the wafers were spun so as to provide a 1 micrometer ( μm ) thick film . the coated wafers were baked at 100 ° c . for 30 minutes in a forced air convection oven . after baking , the wafers were exposed to ultraviolet light through step tablet resolution mask with windows of various optical density so as to provide various exposure levels on the same wafer . the incident exposure was a range of exposure from no exposure to sufficient exposure for the resist to develop to the substrate . the contrast was determined from the slope of a line drawn parallel to the descending portion of a plot of the normalized film thickness remaining after developing vs . the common logarithm of the exposure . the resist films in the following examples were prepared for developing as described above . the photoresist was contacted with a 0 . 378n tetramethylammonium hydroxide aqueous base solution containing 1 % by weight of the total solution of the surfactant in example a of table ii for 75 seconds at 25 ° c . the substrate was then rinsed in deionized water for 60 seconds and dried with nitrogen . the results are shown in table iii . the photoresist was contacted with deionized water for 60 seconds at 22 ° c . and then developed as described in example 1 . the results are shown in table iii . the photoresist was contacted with a 0 . 189 n tetramethylammonium hydroxide aqueous base solution for 30 seconds at 25 ° c . the substrate was rinsed with deionized water for 60 seconds , then developed in the developer as described in example 1 . the results are shown in table iii . the photoresist was contacted with a 0 . 189 n tetramethylammonium hydroxide aqueous base solution containing 0 . 0025 % by weight of the total solution of the surfactant in example a of table i for 30 seconds at 25 ° c . the substrate was rinsed with deionized water for 60 seconds , then developed in the developer as described in example 1 . the results are shown in table iii . the photoresist was contacted with a 0 . 189 n tetramethylammonium hydroxide aqueous base solution containing 0 . 0015 % by weight of the total solution of the surfactant in example b of table i for 30 seconds at 25 ° c . the substrate was rinsed with deionized water for 60 seconds , then developed in the developer as described in example 1 . the results are shown in table iii . the photoresist was contacted with a 0 . 189 n tetramethylammonium hydroxide aqueous base solution containing 0 . 002 % by weight of the total solution of the surfactant in example c of table i for 30 seconds at 25 ° c . the substrate was rinsed with deionized water for 60 seconds , then developed in the developer as described in example 1 . the results are shown in table iii the photoresist was contacted with a 0 . 189 n tetramethylammonium hydroxide aqueous base solution containing 0 . 005 % by weight of the total solution of the surfactant in example d of table i for 30 seconds at 25 ° c . the substrate was rinsed with deionized water for 60 seconds , then developed in the developer as described in example 1 . the results are shown in table iii . table ii______________________________________exam - ple fluorosurfactant______________________________________a cf . sub . 3 ( cf . sub . 2 ) . sub . 6ch . sub . 2 ch . sub . 2 o ( ch . sub . 2 ch . sub . 2 o ). sub . 4 hb cf . sub . 3 ( cf . sub . 2 ) . sub . 5con ( ch . sub . 3 )( ch . sub . 2 ch . sub . 2 o ) . sub . 12h . sub . 3c cf . sub . 3 ( cf . sub . 2 ) . sub . 3so . sub . 2nh ( ch . sub . 2 ch . sub . 2 o ) . sub . 14ch . sub . 3d cf . sub . 3 ( cf . sub . 2 ) . sub . 8so . sub . 2o ( ch . sub . 2 ch . sub . 2 o ) . sub . 8ch . s ub . 3e cf . sub . 3 ( cf . sub . 2 ) . sub . 5co . sub . 2 ( ch . sub . 2 ch . sub . 2 o ) . sub . 9c . sub . 4 h . sub . 9 ## str8 ## g ## str9 ## ______________________________________ table iii______________________________________ film wall sensitivity contrast loss angleexample ( mj / cm . sup . 2 ) ( gamma ) (%) (°) ______________________________________1 30 1 . 6 6 802 30 1 . 6 6 803 25 1 . 8 7 804 35 5 . 2 0 905 37 6 0 906 42 5 0 907 45 4 . 8 0 90______________________________________ the invention has been particularly described with reference to preferred embodiments thereof ; it will be understood by those skilled in the art , however , that changes in form and details may be made therein without departing from the spirit and scope of the invention .