text: embodiments of the present invention and its advantages are best understood by referring to fig1 a through 5c of the drawings , like numerals being used for like and corresponding parts of the various drawings . fig1 a is a schematic cross sectional diagram showing the structure of a memory cell 10 and a discharge transistor 24 for discharging a portion of memory cell 10 according to conventional techniques . memory cell 10 comprises a select gate region 12 , a floating gate region 14 , a source region 16 , a drain region 18 , a tank region 20 , a well region 22 and a substrate region 23 . also shown in fig1 a are a discharge transistor 24 connected to ground , a data multiplexor 26 , and a bit line 28 . after an erase operation on memory cell 10 , a charge remains on bit line 28 , which must be discharged . discharge is accomplished in memory cell 10 by turning on discharge transistor 24 , thereby creating an electrical connection between bit line 28 and ground . the remaining charge on bit line 28 subsequently discharges to ground . fig1 b is a block diagram showing how a plurality of memory cells 10 are configured to form memory cell array 11 . each memory cell 10 requires a separate discharge transistor 24 for the discharge of its bit line 28 . as a result , the conventional method of discharging results in a significant increase in the silicon area of memory cell array 11 . fig2 a through 3d show one embodiment of the present invention and other drawings related to the operation of that embodiment . because this embodiment does not require multiple discharge transistors , this embodiment offers substantial area savings over memory cells configured in accordance with conventional discharge methods . furthermore , because the silicon area of a memory cell is a primary factor in the cost of manufacturing such memory cells , the present teachings offer a significant reduction in production costs . fig2 a shows a schematic cross - sectional diagram of one embodiment of the present invention . memory cell 30 comprises a select gate region 32 , a floating gate region 34 , a source region 36 , a drain region 38 , a tank region 40 , a well region 42 , and a substrate region 43 . also shown in fig2 a are a switch 44 , a data multiplexor 46 and a bit line 48 . tank region 40 is located within well region 42 and has the opposite conductivity type of well region 42 . drain region 38 and source region 36 are located within tank region 40 and have the opposite conductivity type of tank region 40 . in this embodiment , drain region 38 , source region 36 and well region 42 comprise silicon doped with negative charge carriers , or n - type silicon , and tank region 40 and substrate region 43 comprise silicon doped with positive charge carriers , or p - type silicon . as described in more detail below , switch 44 is electrically connected to source region 36 to allow discharge of source region 36 after memory cell 30 has been erased . switch 44 may be implemented by a transistor or other suitable electrical switch . bit line 48 connects drain region 38 to data multiplexor 46 , which serves as an output port for memory cell 30 . during erasure of memory cell 30 in this embodiment , a voltage level of seven volts is applied to well region 42 and tank region 40 . this charges source region 36 and drain region 38 to 6 . 3v . a voltage of negative seven volts is applied to select gate 32 . this application of voltages between well region 42 and select gate region 32 induces an electric field between floating gate region 34 and tank region 40 . after the electrical erase , gate region 32 is then grounded , resulting in the voltages shown in fig2 a . after this erase procedure a voltage level remains on drain region 38 , which must be removed . according to the teachings of the invention and as described in greater detail below , the voltage level is discharged by completing a connection between ground and source region 36 , tank region 40 , well region 42 , or any suitable combination thereof . in this embodiment , a transistor acting as a switch 44 completes the connection for a plurality of the memory cells 30 of the memory cell array 60 . by contrast , prior art memory cell arrays require a separate discharge transistor attached to each bit line of the memory cell array . thus , the advantages of the present invention include , but are not limited to , a reduction in the silicon area needed for individual memory cells 30 within memory cell array 60 and consequently a decrease in the cost of manufacturing memory cell array 60 . fig2 b is a block diagram showing how a plurality of memory cells 30 of fig2 a are configured to form a memory cell array 60 . unlike prior art memory cell array 11 , memory cell array 60 requires only one switch 44 to discharge all bit lines 48 within memory cell array 60 . also , switch 44 does not have to be pitch - match to the array . this facilitates circuit design . fig3 a is a schematic cross - sectional diagram showing the flow of electrons that results when the memory cell 30 is discharged in accordance with one method of the present invention . switch 44 is closed so that source region 36 is electrically connected to ground . as a result , the voltage level of source region 36 decreases to 0 volts . because drain region 38 , tank region 40 , and well region 42 now have greater voltages than source region 36 , the electrons that are abundant in the n - type material of source region 36 are emitted to drain region 38 , tank region 40 , and well region 42 . fig3 b is a schematic cross - sectional diagram showing the voltage levels of the components of memory cell 30 after the transfer of electrons shown in fig3 a . the flow of electrons from source region 36 to drain region 38 , tank region 40 and well region 42 decreases the voltage level of drain region 38 , tank region 40 , and well region 42 to 0 volts , thereby eliminating the charge that remained on bit line 48 as a result of the erase operation , as described in greater detail below in conjunction with fig3 c . fig3 c is a flow chart showing steps involved in discharging memory cell 30 in accordance with the present invention . step 100 comprises an erase operation . erasure of memory cell 30 is accomplished in this embodiment of the invention by applying a positive voltage differential across well region 42 and select gate region 32 . well region 42 and tank 40 are at the same potential . as discussed above , a charge remains on drain region 38 , and consequently , on bit line 48 after the erase operation . step 110 comprises floating tank region 40 and well region 42 during the erase step 100 . source region 36 and drain region 38 are also floating . step 120 comprises electrically connecting source region 36 to ground . such a connection is accomplished in this embodiment by means of switch 44 , which can be a transistor or other electrical switch . step 120 is accomplished by closing switch 44 , which connects source region 36 to ground and causes the remaining charge on bit line 48 to discharge as described above . step 130 comprises electrically connecting tank region 40 and well region 42 to ground to discharge any remaining charge stored in tank region 40 or well region 42 . fig3 d is a graph showing the voltage versus time characteristics of components of memory cell 30 when discharged according to the teachings of the present invention . curve 150 shows the voltage level of source region 36 during discharge according to the method shown in fig3 a , while curve 160 shows the voltage level of drain region 38 . similarly , curve 170 and curve 180 show the voltage levels of tank region 40 and well region 42 respectively . as shown by fig3 d and particularly curve 160 , discharging memory cell 30 in accordance with this embodiment of the present invention does successfully eliminate a substantial portion of the remaining charge on drain region 38 and consequently , on bit line 48 . fig4 a is a schematic cross - sectional diagram showing the flow of electrons that results when the memory cell of fig2 a is discharged in accordance with an alternative embodiment of the present invention . in the embodiment of fig4 a , switch 44 is connected to well region 42 . after erase operation , the voltage levels of the components of memory cell 30 are as shown in fig2 a . in the embodiment shown in fig4 a , closing switch 44 electrically connects well region 42 to ground . as a result , the voltage level on tank region 40 and the voltage level on well region 42 decrease to 0 . 7 volts and zero volts , respectively . the flow of electrons from well region 42 to tank region 40 , drain region 38 , and source region 36 decreases the voltage level of drain region 38 , thereby eliminating the charge that remained on bit line 48 as a result of the erase operation . fig4 b is a flow chart showing steps involved in discharging memory cell 30 in accordance with the alternative method shown in fig4 a . step 200 comprises an erase operation . erasure of memory cell 30 is accomplished in this alternative embodiment of the invention by applying a positive voltage differential across well region 42 and select gate region 32 . well region 42 and tank region are at the same potential . as discussed above , a charge remains on drain region 38 , and consequently , on bit line 48 after the erase operation . step 210 comprises floating source region 36 , drain region 38 , well region 42 , and tank region 40 . step 220 comprises electrically connecting well region 42 to ground . such a connection is accomplished in this embodiment by means of switch 44 , which can be a transistor or other electrical switch . as shown in fig4 a , step 220 is accomplished by closing switch 44 , which connects well region 42 to ground and causes the remaining charge on bit line 48 to discharge . if any charge remains on source region 36 or drain region 38 following step 220 , such charge can be discharged through data multiplexor 46 as shown in step 230 . fig4 c is a graph showing representative voltage versus time characteristics of components of memory cell 30 when discharged according to the alternative method shown in fig4 a and fig4 b . curve 250 shows the voltage level of source region 36 during discharge , while curve 260 shows the voltage level of drain region 38 . similarly , curve 270 and curve 280 show the voltage levels of tank region 40 and well region 42 respectively . as shown by fig4 c and particularly curve 260 , discharging memory cell 30 in accordance with this embodiment of the present invention does successfully eliminate a substantial portion of the remaining charge on drain region 38 and consequently , on bit line 48 . fig5 a is a schematic cross - sectional diagram showing the flow of electrons that results when the memory cell of fig2 a is discharged in accordance with an alternative method of the present invention . in the embodiment of fig5 a , switch 44 is connected to well region 42 and tank region 40 . after erase operation , the voltage levels of the components of memory cell 30 are as shown in fig2 a . in the embodiment shown in fig5 a , closing switch 44 electrically connects well region 42 and tank region 40 to ground . as a result , the voltage level on well region 42 and tank region decreases to 0 volts . the flow of electrons from tank region 40 decreases the voltage level of drain region 38 , thereby eliminating the charge that remained on bit line 48 as a result of the erase operation . fig5 b is a flow chart showing steps involved in discharging memory cell 30 in accordance with the alternative method shown in fig5 a . step 300 comprises an erase operation . erasure of memory cell 30 is accomplished in this alternative embodiment of the invention by applying a positive voltage differential across well region 42 and select gate region 32 . the potential of well region 42 and tank region 40 are the same . as discussed above , a charge remains on drain region 38 , and consequently , on bit line 48 after the erase operation . step 310 comprises floating source region 36 , drain region 38 , well region 42 , and tank region 40 . step 320 comprises electrically connecting well region 42 and tank region 40 to ground . such a connection is attained in this embodiment by means of switch 44 , which can be a transistor or other electrical switch . as shown in fig5 a , step 320 is accomplished by closing switch 44 , which connects well region 42 and tank region 40 to ground and causes the remaining charge on bit line 48 to discharge . if any charge remains on source region 36 or drain region 38 following step 220 , such charge can be discharged through data multiplexor 46 as shown in step 230 . fig5 c is a graph showing the voltage versus time characteristics of components of memory cell 30 when discharged according to the alternative method shown in fig5 a and fig5 b . curve 350 shows the voltage level of source region 36 during discharge , while curve 360 shows the voltage level of drain region 38 . similarly , curve 370 and curve 380 show the voltage levels of tank region 40 and well region 42 respectively . as shown by fig5 c and particularly curve 360 , discharging memory cell 30 in accordance with this embodiment of the present invention does successfully eliminate a substantial portion of the remaining charge on drain region 38 and consequently , on bit line 48 . thus , it should be obvious to one skilled in the art that the present invention overcomes the drawbacks of the conventional method for discharging memory cell arrays . by requiring only one switch for discharging a plurality of memory cells within the memory cell array , the present invention teaches memory cells that are both smaller and less expensive to manufacture than those manufactured in accordance with the conventional method . although the present invention and its advantages have been described in detail , it should be understood that various changes , substitutions , and alterations can be made therein without departing form the spirit and the scope of the present invention as defined by the appended claims .