text: the present invention will be described below in detail with reference to the accompanying drawings as needed . the saw device according to the present invention has a basic structure in which an linbo 3 layer is formed on diamond as a substrate material , and an sio 2 layer is formed on the linbo 3 layer . when the sound velocity of the diamond as a substrate material is higher than that of linbo 3 as a piezoelectric material , and an saw is oscillated using an interdigital transducer , a plurality of saws with different propagation velocities v are excited . in this case , the modes are expressed as the 0th mode , the 1st mode , the 2nd mode , the 3rd mode , . . . in an order from a lower propagation velocity v . the saw mode used by the saw device according to the present invention can be determined by measuring the saw propagation velocity v at the operating frequency of the device . the propagation velocity v can be obtained from , e . g ., a relation v = fλ ( f is the center frequency ; λ is the wavelength based on the electrode width of the interdigital transducer ). when the interdigital transducer constituting the saw device is a single electrode ( electrode width d ) having a planar shape as shown in fig1 λ = 4d . when the interdigital transducer is a double electrode ( electrode width d ) having a planar shape as shown in fig2 λ = 8d . the saw device according to the present invention basically has a layer structure in which the layer structure according to the present invention is formed on an appropriate substrate ( e . g ., si ) as needed . therefore , two structures shown in the schematic sectional views of fig3 a and 3b can be occasionally employed for implementation of the present invention in order to , e . g ., obtain a necessary mechanical strength without influencing the characteristics of the saw device according to the present invention . therefore , the saw device according to the present invention basically has a layer structure including at least diamond as a substrate material or a diamond layer , an linbo 3 layer having a c - axis orientation and formed on the diamond , and an sio 2 layer formed on the linbo 3 layer . the thickness of the diamond or diamond layer is not particularly limited . with a thickness to be described below , the characteristics of the saw device according to the present invention are not influenced . on the other hand , parameters defined as kh 1 = 2π ( t 1 / λ n ) and kh 2 = 2π ( t 2 / λ n ) are selected within specific ranges , where t 1 ( μm ) is the thickness of the linbo 3 layer , and t 2 ( μm ) is the thickness of the sio 2 layer . the thickness of each layer is selected to be optimized in accordance with the operating frequency , the shape of the excitation interdigital transducer ( to be described below ), and the like . in the present invention , excitation and short - circuit electrodes are arranged in the above - described basic layer structure in various embodiments . as shown in fig1 to 22 , the various electrode arrangements can hardly influence the characteristics of the device according to the present invention . in the present invention , various electrode arrangements are allowed in accordance with the application purposes of the device . particularly , in the present invention , seven electrode arrangements as shown in fig4 to 10 in which an interdigital transducer 4 and , as needed , a short - circuit electrode 5 are arranged are preferably used . the seven electrode arrangements will be described below in more detail . in the arrangement shown in fig4 ( electrode arrangement a ), the saw device comprises diamond 1 , an linbo 3 layer 2 formed on the diamond , the interdigital transducer 4 formed on the linbo 3 layer 2 , and an sio 2 layer 3 formed on the interdigital transducer 4 . in the arrangement shown in fig6 ( electrode arrangement c ), a short - circuit electrode is formed on the sio 2 layer in the &# 34 ; electrode arrangement a &# 34 ;. in the arrangement shown in fig8 ( electrode arrangement e ), the saw device comprises the diamond 1 , the interdigital transducer 4 formed on the diamond , the linbo 3 layer 2 formed on the interdigital transducer , and the sio 2 layer 3 formed on the linbo 3 layer 2 . in the arrangement shown in fig1 ( electrode arrangement g ), the short - circuit electrode 5 is formed on the sio 2 layer 3 in the &# 34 ; electrode arrangement e &# 34 ;. in the arrangement shown in fig9 ( electrode arrangement f ), the short - circuit electrode 5 is formed on the linbo 3 layer 2 in the &# 34 ; electrode arrangement e &# 34 ;. in the arrangement shown in fig5 ( electrode arrangement b ), the short - circuit electrode 5 is formed on the diamond 1 in the &# 34 ; electrode arrangement a &# 34 ;. in the arrangement shown in fig7 ( electrode arrangement d ), the short - circuit electrode 5 is formed on the diamond 1 in the &# 34 ; electrode arrangement c &# 34 ;. the respective layers constituting the saw device of the present invention will be described below in more detail . the saw device according to the present invention does not always need a substrate . for example , diamond as a substrate material can be used without being processed , as will be described below . as needed , an appropriate substrate formed of , e . g ., a semiconductor such as si , a metal , a glass material , a ceramic , or the like can be used . in the present invention , diamond as a substrate material is not particularly limited . single - crystal diamond and / or polycrystalline diamond can be used . a method of forming the diamond or the diamond layer is not particularly limited . more specifically , single - crystal diamond may be used as the diamond . in addition , a diamond film may be formed on any material ( substrate ) other than those described above by vapor deposition to obtain a polycrystalline diamond film or an epitaxially grown diamond film . in the present invention , when the diamond is a diamond film , the method of depositing the diamond film or a thin diamond film is not particularly limited . more specifically , a known technique such as cvd ( chemical vapor deposition ), microwave plasma cvd , pvd ( physical vapor deposition ), sputtering , ion plating , a plasma jet method , a flame method , or a hot filament method can be used as the deposition method . in the present invention , the thickness of the diamond layer is not limited . a thickness for stably exciting and propagating a desired saw suffices . therefore , the thickness must be at least 1 / 2 the saw ( wavelength : λ n μm ). the thickness is preferably one or more times the saw for use . in the present invention , the linbo 3 film to be formed on diamond may be either a single - crystal film or a polycrystalline film . in the present invention , a polycrystalline film is particularly preferable from the viewpoint of cost in manufacturing devices . the method of forming the linbo 3 film on the diamond is not particularly limited either , and a known technique such as sputtering , deposition , cvd , laser annealing , mocvd ( organic metal cvd ), or mbe ( molecular beam epitaxy ) can be used without particular limitation ( for example , a film forming method and a film characteristic measuring method described in furushima , y . et al ., ultrasonics symposium 1993 , pp . 263 - 266 . shimizu , m et al ., j . appl . phys ., 32 , pp . 4111 - 4114 , 1993 are incorporated in this specification ). when the c - axis orientation ( to be described below ) of the linbo 3 layer formed by the above technique under predetermined conditions is checked , manufacturing conditions for forming a film having a c - axis orientation which exhibits a desired value a can be set . as for the thickness of the linbo 3 film , when various conditions for the above - described known film forming method are set , one skilled in the art can easily form a film having a desired thickness . in addition , after film formation , the device can be cut and the section can be directly measured using a scanning electron microscope or the like , as needed . in the present invention , in either a single - crystal or polycrystalline linbo 3 film to be formed on the diamond , it is preferable that the c - axis of the microcrystalline linbo 3 film be substantially perpendicularly oriented on the diamond substrate material surface from the viewpoint of the electro - mechanical coupling properties , the piezoelectric properties , and the like . in the present invention , such an linbo 3 film is defined as a film having a c - axis orientation . the degree of substantially perpendicular orientation of the c - axis of the microcrystalline linbo 3 film formed on the diamond substrate material surface according to the present invention can be directly qualitatively observed by directly observing the cleavage surface of the device with an electron microscope or directly observing the surface of the linbo 3 film with an electron microscope . to quantitatively evaluate the orientation , the x - ray rocking pattern method can be used as one of the crystal face orientation evaluation techniques to evaluate the degree of perpendicular orientation of the c - axis of the microcrystalline linbo 3 film formed on the diamond substrate material surface , as will be described below . more specifically , a conventional x - ray diffraction apparatus ( using a cu - kα ray ) can be used to perform evaluation as follows : ( 1 ) a device as a measurement target is set on a sample holder of an x - ray diffractometer . ( 2 ) a plane orientation to be evaluated is measured using the x - ray diffraction patterning method . ( 3 ) the θ - axis ( measurement sample rotation ) and 2θ - axis ( x - ray counter ) are rotated and fixed at the maximum value of the output in the plane orientation to be evaluated . in a microcrystalline linbo 3 film whose c - axis of the perpendicularly oriented with respect to the substrate , 2θ is 39 ° at a peak of ( 006 ). ( 4 ) only the device is rotated ( only the θ - axis ), and the rocking curve is measured . ( 5 ) the measured rocking curve is approximated by gaussian distribution , and the dispersion value σ is obtained . the dispersion value σ of the rocking curve measured in the above manner is evaluated as dispersion of the c - axis from a line perpendicular to the substrate . when the c - axis orientation is disordered , the piezoelectric properties tend to be degraded . the saw device of the present invention exhibits satisfactory piezoelectric properties when the value σ is 8 ° or less , and more satisfactory piezoelectric properties when the value σ is 4 ° or less . the above technique can be used even after an sio2 film is formed on the linbo 3 film . more specifically , as needed , the sio 2 film is removed to expose the linbo 3 film , and thereafter , the x - ray diffraction apparatus or the like is used . the above technique can also be used in observation of the section of the device with a scanning electron microscope . in this case , the perpendicularity on the substrate surface is measured within a predetermined range . in the present invention , the sio 2 layer formed on the linbo 3 film may be a single - crystal layer , a polycrystalline layer , or an amorphous layer . particularly , an amorphous sio 2 layer can be preferably used . a method of forming this film is not particularly limited in the present invention . more specifically , a known technique such as cvd , pvd , and sputtering can be preferably used . an rf magnetron sputtering apparatus can be more preferably used . as for the thickness of the sio 2 film , one skilled in the art can easily form a film having a desired thickness by setting various conditions for the above - described known film forming method . in addition , after film formation , the device can be cut , and the section can be directly measured using a scanning electron microscope or the like , as needed . in the present invention , the material for forming the interdigital transducer is not particularly limited as far as it is a conductive material . from the viewpoint of workability as an interdigital transducer and cost , al ( aluminum ) can be particularly preferably used . the thickness of the interdigital transducer is preferably about 100 to 5 , 000 å ( more preferably , about 100 to 500 å ) though it is not particularly limited as far as the function as an electrode can be obtained . when this thickness is smaller than 100 å , the resistivity increases , resulting in an increase in loss . on the other hand , when the thickness of the electrode exceeds 5 , 000 å , the mass addition effect which causes reflection of an saw due to the thickness and height of the electrode becomes conspicuous , and desired saw characteristics may be impeded . the planar shape of the interdigital transducer is not particularly limited as far as the function as an electrode can be obtained . a so - called single electrode whose schematic plan view is shown in fig1 or a double electrode whose schematic plan view is shown in fig2 can be preferably used . in the saw device of the present invention , the short - circuit electrode arranged as needed is an electrode having a function of setting an equipotential of an electric field to change the saw characteristics of the device . this electrode is preferably formed of a ( thin ) metal film ( e . g ., al , au , or al - cu ). since the short - circuit electrode has a function different from that of the interdigital transducer , the material for forming the short - circuit electrode need not be the same as that of the interdigital transducer . the thickness of the short - circuit electrode is not particularly limited as far as the function as an electrode can be obtained . however , it is preferably about 50 to 3 , 000 å ( more preferably , about 100 to 500 å ). when this thickness is smaller than 50 å , it is difficult to obtain an equipotential . a thickness larger than 3 , 000 å easily affects reflection of an saw . the short - circuit electrode preferably has a planar shape of &# 34 ; non - segmented electrode &# 34 ; having the same area as that of the interdigital transducer . the present invention will be described below in more detail in accordance with examples . a polycrystalline diamond film was formed on the ( 100 ) plane of single - crystal silicon by microwave plasma cvd . thereafter , the surface was polished to form a diamond film having a thickness of about 20 μm . each linbo 3 film ( thickness : 0 . 38 to 1 . 27 μm , six types ) was formed on the diamond film by rf magnetron sputtering . all the formed linbo 3 films were films having a c - axis orientation . the values a of x - ray rocking curves were 2 ° to 3 °. target li : nb = 1 : 1 sintered body ( sintered body of li 2 co 3 and nb 2 o ,) film thickness : six different values of 0 . 38 , 0 . 51 , 0 . 64 , 0 . 76 , 1 . 02 , 1 . 27 μm an interdigital transducer ( planar shape ; double electrode shown in fig2 electrode width d = 1 μm , period = 8 μm ) having a thickness of 400 å was formed using al . an sio 2 film was formed on the interdigital transducer by rf magnetron sputtering , thereby completing an saw device having the layer structure shown in fig3 b and the electrode arrangement ( electrode arrangement a ) shown in fig4 ( number of electrode pairs of input interdigital transducer : 30 , number of electrode pairs of output interdigital transducer : 30 , center - to - center distance between the input and output electrodes : 400 μm ). film thickness : thickness corresponding a value obtained by equally dividing a thickness of 0 . 13 to 1 . 62 μm into 40 portions a short - circuit electrode ( thickness : 100 å ) was formed on the saw device ( electrode arrangement a ) by using al , thereby completing an saw device having the layer structure shown in fig3 b and the electrode arrangement c shown in fig6 . an saw device having the electrode arrangement e shown in fig8 an saw device having the electrode arrangement b shown in fig5 an saw device having the electrode arrangement g shown in fig1 , and an saw device having the electrode arrangement f shown in fig9 were manufactured in accordance with the same procedures for manufacturing the above saw device except that the order of layer formation was changed . a short - circuit electrode ( thickness : 100 å ) was formed on the sio 2 film of the saw device having the electrode arrangement b shown in fig5 by using al , thereby completing an saw device having the electrode arrangement d shown in fig7 . a high frequency was applied to the input electrode of each of the above saw devices to excite an saw . from a relation v = fλ ( f is the center frequency ; λ = 8d = 8 μm ), the propagation velocity v ( m / s ) of the saw in each excitation mode was obtained . the radiation conductance of the interdigital transducer ( idt , interdigital transducer ) was measured by using a network analyzer ( 8719a available from yokogawa hewlett packard ( yhp )), and the electromechanical coupling coefficient ( k 2 ) was obtained on the basis of a real part g of the radiation conductance as follows : ( f 0 : center frequency , c : total capacitance of interdigital transducer , n : number of pairs of interdigital transducer ) the frequency temperature coefficient ( tcf ) was measured from the dependency of the frequency of the saw on the temperature , and the coefficient tcd was obtained from a relation tcf =- tcd . the thickness t 1 ( μm ) of the linbo 3 layer and the thickness t 2 ( μm ) of the sio 2 layer of the saw device were obtained by cutting the device after measurement of the above various parameters and observing the section with a scanning electron microscope ( sem ) at a magnification of x1 , 000 to x5 , 000 . on the basis of obtained data , the parameters kh 1 = 2π ( t 1 / λ ) and kh 2 = 2π ( t 2 / λ ) were obtained for each of the saw devices ( λ = 8 μm ) having the layer structure ( layer structure 2 ) shown in fig3 b and the electron arrangements ( electron arrangements a to g ) shown in fig4 to 10 . the relation ( dependency ) between the propagation velocity v and the parameter kh 2 , which are obtained in the above manner , is shown in a graph of fig1 ( kh 1 = 0 . 3 ), fig1 ( kh 1 = 0 . 4 ), fig1 ( kh 1 = 0 . 5 ), fig1 ( kh 1 = 0 . 6 ), fig1 ( kh 1 = 0 . 8 ), or fig1 ( kh 1 = 1 . 0 ). the relation ( dependency ) between the delay time temperature coefficient tcd and the parameter kh 2 , which are obtained in the above manner , is shown in a graph of fig1 ( kh 1 = 0 . 3 ), fig1 ( kh 1 = 0 . 4 ), fig1 ( kh 1 = 0 . 5 ), fig2 ( kh 1 = 0 . 6 ), fig2 ( kh 1 = 0 . 8 ), or fig2 ( kh 1 = 1 . 0 ). for the saw device obtained in the above manner ( fig4 electrode arrangement a ), the relation ( dependency ) between the electromechanical coupling coefficient k 2 , the parameter kh 1 , and the parameter kh 2 is shown in a graph of fig2 ( kh 1 = 0 . 3 ), fig2 ( kh 1 = 0 . 4 ), fig2 ( kh 1 = 0 . 5 ), fig2 ( kh 1 = 0 . 6 ), fig2 ( kh 1 = 0 . 8 ), or fig2 ( kh 1 = 1 . 0 ). similarly , for each of the saw devices obtained in the above manner ( electrode arrangements b to g shown in fig5 to 10 ), the relation ( dependency ) between the electromechanical coupling coefficient k 2 , the parameter kh 1 , and the parameter kh 2 is shown in graphs of fig2 to 34 ( electrode arrangement b ), fig3 to 40 ( electrode arrangement c ), fig4 to 46 ( electrode arrangement d ), fig4 to 52 ( electrode arrangement e ), fig5 to 58 ( electrode arrangement f ), or fig5 to 64 ( electrode arrangement g ). an interdigital transducer ( planar shape : double electrode shown in fig2 electrode width d = 1 μm , period : 8 μm ) having a thickness of 400 å was formed on the ( 100 ) plane of a single - crystal diamond ( natural , type ia ). each linbo 3 layer ( thickness : 0 . 38 to 1 . 27 μm , six types ) was formed on the interdigital transducer by rf magnetron sputtering . all of the formed linbo 3 films were films having a c - axis orientation , and the values σ of x - ray rocking curves were 2 ° to 3 °. an sio 2 film was formed on the linbo 3 layer by rf magnetron sputtering , thereby completing an saw device having the layer structure ( film thickness : thickness corresponding to a value obtained by equally dividing a thickness 0 . 13 to 1 . 62 μm into 40 portions ) shown in fig3 a and the electrode arrangement ( electrode arrangement e ) shown in fig8 ( number of electrode pairs of input interdigital transducer : 30 , number of electrode pairs of output interdigital transducer : 30 , center - to - center distance between the input and output electrodes : 400 μm ). an saw device having the electrode arrangement a shown in fig4 was manufactured following the same procedures as in the above saw device except that the order of layer formation was changed . a short - circuit electrode ( thickness : 100 å ) was formed on the linbo 3 layer 2 of the saw device ( electrode arrangement e ) by using al , thereby completing an saw device having the layer structure ( layer structure 1 ) shown in fig3 a and the electrode arrangement f shown in fig9 . saw devices having the electrode arrangement b shown in fig5 the electrode arrangement c shown in fig6 and the electrode arrangement g shown in fig1 were manufactured following the same procedures as in the above saw device except that the order of layer formation was changed . a short - circuit electrode ( thickness : 100 å ) was formed on the sio 2 layer of the electrode arrangement b shown in fig5 by using al , thereby completing an saw device having the layer structure ( layer structure 1 ) shown in fig3 a and the electrode arrangement d shown in fig7 . from the invention thus described , it will be obvious that the invention may be varied in many ways . such variations are not to be regarded as a departure from the spirit and scope of the invention , and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims . the basic japanese application no . 21598 / 1995 filed on feb . 9 , 1995 is hereby incorporated by reference .