Moores Law, Computer Science, Photonics, Electronics, Integrated Circuits.
area by 1/S². C₉ₐₜₑ= W*L * ε/tₒₓ where ε is the dielectric constant of the gate oxide and tₒₓ is the thickness. This means as transistor area is scaled by 1/S², C₉ₐₜₑ is also scaled by 1/S². Rₒₙ= V𝒹𝒹/Iₒₙ ∝ L/W so if W and L both decrease by 1/S it has no effect on Rₒₙ Circling back to equations (1)