## Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates

Guangnan Zhou, Zeyu Wan, Gaiying Yang, Yang Jiang, Robert Sokolovskij, Hongyu Yu, and Guangrui (Maggie) Xia

Abstract -In this  work,  single-layer  intrinsic  and  fluorinated graphene were investigated as gate insertion layers in normallyOFF p-GaN gate HEMTs, which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/ SiN   on  the  two  sides.  Compared  to  the  Au/Ti/p-GaN  HEMTs x without  graphene,  the  insertion  of  graphene  can  increase  the ION/IOFF ratios by a factor of 50, increase the VTH by 0.30 V and reduce  the  off-state  gate  leakage  by  50  times.  Additionally,  this novel  gate  structure  has  better  thermal  stability.  After  thermal annealing at 350 °C, gate breakdown voltage holds at 12.1 V, which is first reported  for  Schottky  gate  p-GaN  HEMTs.  This  is considered to be a result of the 0.24 eV increase in Schottky barrier height  and  the  better  quality  of  the  Ti/graphene/p-GaN  and Ti/graphene/SiN   interfaces.  This  approach  is  very  effective  in x improving the ION/IOFF ratio and gate BV of normally-OFF GaN HEMTs.

Index Terms -p-GaN high electron mobility transistor (HEMT), graphene, gate leakage, gate breakdown

## I. INTRODUCTION

Gallium nitride (GaN) possesses excellent physical properties,  such  as  a  high  critical  electric  field  and  a  high saturation velocity [1-3], which is ideal for devices with a low specific ON-resistance (RON), a high breakdown voltage and a high  operation  switching  frequency.  For  switch  applications, normally-off transistors are required to provide adequate safety conditions [4-5]. Among many options of normally-off HEMTs [6-8], recessed gate metal-insulator-semiconductor-HEMTs (MIS-HEMTs)  and  p-GaN  gate  HEMTs  (which  lift  up  the conduction  band)  have  been  considered  as  the  two  most promising approaches [9-10].

Reducing the gate leakage current remains a big challenge for  p-GaN  gate  HEMTs  [11-13].  The  forward  gate  leakage current limits the gate voltage swing and causes drive losses,

This work was supported by Grant #2019B010128001 and #2017A050506002  from  Guangdong  Science  and  Technology  Department, Grant #JCYJ20160226192639004 and #JCYJ20170412153356899 from Shenzhen  Municipal  Council  of  Science  and  Innovation.  (Corresponding authors: Y. Hong and G. Xia.)

G. Zhou and G. Xia are with and the School of Microelectronics, Southern University  of  Science  and  Technology  (SUSTech)  and  the  Department  of while the reverse one can lead to the off-state power consumption [14].  Previous  studies  in  MIS-HEMTs  revealed that fluorinated graphene can serve as a barrier layer between Al2O3  and  GaN,  which  contributed  to  a  suppression  of  gate leakage current by two orders of magnitude [15]. Graphene can act  as  a  strong  barrier  to  atom  diffusion  and  saturate  the dangling bonds and defects on the surface [16, 17].  However, there have not been any reports on the effectiveness of graphene in p-GaN HEMTs, which was addressed in this work.

## II. DEVICE STRUCTURE AND FABRICATION

The  p-GaN  gate  HEMTs  were  fabricated  on  100  nm  pGaN/15 nm Al0.2Ga0.8N/0.7 nm AlN/4.5 μ m GaN epi-structures grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD) provided by Enkris Semiconductor Inc. Fig. 1 shows the schematic cross-section of the devices. The pGaN layer was doped with Mg to a concentration of 4 × 10 19 cm -3 . The fabrication flow started with p-GaN gate definition by a Cl-based plasma etch followed by a Cl2/BCl3 plasma etch to form mesas and isolate the devices. The source/drain (S/D) Ohmic  contacts  were  formed  by  Ti/Al/Ti/Au  (20/110/40/50 nm) deposition and annealing was at 830 °C in N2 for 45 s. 120 nm  SiN   deposited x by plasma enhanced  chemical vapor deposition  (PECVD)  was  used  as  the  first  passivation  layer. Prior to the deposition of gate metals (40 nm Ti/100 nm Au), single  layer  graphene  grown  by  chemical  vapor  deposition (CVD) on Cu foils was transferred to part of the sample surface via  the  'polymethyl  methacrylate  (PMMA)-mediated'  wettransfer  approach  [18].  The  undesired  part  of  graphene  was etched  away  by  O2  plasma  after  deposition  of  gate  metal. Finally, the devices were annealed at 350 °C in N2 for 5 minutes to improve the Au/Ti(graphene)/p-GaN interface.

Materials  Engineering,  the  Univerisity  of  British  Columbia  (UBC).  (e-mail: gxia@mail.ubc.ca)

Z.  Wan,  Y.  Jiang,  R.  Sokolovskij  and  H.  Yu  are  with  the  School  of Microelectronics,  SUSTech; GaN Device Engineering Technology Research Center  of  Guangdong,  SUSTech;  and  the  Key  Laboratory  of  the  Third Generation Semiconductors, SUSTech, 518055 Shenzhen, Guangdong, China. (e-mail: yuhy@sustech.edu.cn)

G. Yang is with the School of Innovation &amp; Entrepreneurship at SUSTech.

Fig. 1.  (a) Schematic of the device structure; (b) Cross-section of the device characterized  by  a scanning  transmission  electron  microscope  (STEM) showing the edge of a p-GaN gate and the p-GaN/AlGaN/GaN structure.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00119v2-figure-5cfa4205-b607-4cc5-a105-050473093ec2.jpg)

Two types of graphene, intrinsic (I-graphene) and fluorinated graphene (F-graphene), were investigated. Fgraphene  was  realized  by  exposing  the  I-graphene  to  SF6 plasma. In this experiment, the quality and the cleanness of the transferred  graphene  are  crucial,  as  the  metal/semiconductor barrier height heavily depends on the surface states and defects. Especially,  the  PMMA  residuals  could  lead  to  Fermi-level pinning  at  the  metal/graphene/p-GaN  junction,  which  would eventually result in the malfunction of these devices [19]. As illustrated in Fig. 2, the Raman spectra and SEM pictures show that  the  transferred  graphene  has  a  high  quality  ( 𝐼 2𝐷 /𝐼 𝐺 ≈ 2 ) with negligible PMMA contaminations [20].

Fig. 2.  The transferred graphene characterized by (a) Raman spectroscopy and (b)  SEM,  a  few  PMMA  residuals  are  shown  intentionally  as  noted  by  the arrows.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00119v2-figure-f89a3dc2-89b3-4413-89cd-c6f67a2a9900.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00119v2-figure-f09d9818-074e-49d7-913a-75387ba855e4.jpg)

## III. RESULTS AND DISCUSSION

## A. HEMTs results

The HEMTs with and without graphene are from the same wafer piece. The gate leakage, transfer and output characteristics of the HEMTs are shown in Fig. 3.

Compared  to  the  HEMTs  with  Ti/p-GaN  gate  structures, those with Ti/I-graphene/p-GaN and Ti/F-graphene/p-GaN gate structures  have  about  one  order  of  magnitude  lower  gate leakage with a forward bias and 2 orders of magnitude with a reverse bias.

Fig. 3.  Comparison of the device performance of the p-GaN HEMTs with Igraphene, F-graphene and without graphene; (a) gate leakage characteristics under VDS = 0 V; (b) output characteristics (VG from VTH to (VTH + 5V)), 1V step); (c) transfer characteristics under VDS = 1 V, the inset figure is transfer characteristics plotted in linear scale; and (d) V TH uniformity characterization.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00119v2-figure-95536063-54b1-4212-aba1-91c08b06f006.jpg)

Additionally, the HEMTs  with graphene have higher threshold  voltage  (VTH)  defined  at  IDS  =  10  μA/mm  (0.32  V higher for I-graphene and 0.28 V higher for F-graphene). More importantly,  the  insertion  of  graphene  increased  the  ION/IOFF ratio at least one order of magnitude for both types of graphene. Detailed comparison of the extracted DC parameters between three types of devices is shown in Table I. The statistical data of VTH is shown in Fig. 3 (d). The average VTH values of the

devices without graphene, with I-graphene and with F-graphene are 1.58 V, 1.86 V and 1.84 V, respectively. The increase of VTH should be attributed to higher Schottky barrier height ( Φ𝐵 ) and  p-type  doping  in  graphene  introduced  in  the  'PMMAmediated' wet-transfer process [18]. In summary, the insertion of graphene reduced the gate leakage current and increased VTH without sacrificing any output performances.

TABLE I

COMPARISON OF EXTRACTED DC PARAMETERS

| Parameters             | No graphene   | I-Graphene   | F-Graphene   |
|------------------------|---------------|--------------|--------------|
| I G (V G = 8V) (mA/mm) | ~ 2           | ~ 0.1        | ~ 0.1        |
| I OFF (mA/mm)          | 2.5 ×10 -4    | 3.6 ×10 -6   | 1.2 ×10 -6   |
| V TH (V)               | 1.54          | 1.86         | 1.82         |
| R ON (Ω  mm)          | 12.4          | 12.8         | 11.9         |
| Gate BV (V)            | 9.8           | 12.05        | 12.0         |

## B. Effects of Graphene during Annealing Treatment

In practice, passivation layers are necessary for metal pads and interconnect protection. This means that the gate metal/pGaN interfaces will commonly experience some lowtemperature thermal annealing. For the gate-metal-first process, the  interface  will  undergo  an  even  higher  thermal  budget  for S/D  contact  annealing  [13].  To  investigate  the  effects  of graphene during these thermal steps, the gate leakage of devices had also been measured before the annealing treatment (350 °C in N2  for 5 minutes). Fig. 4 presents the gate leakage characteristics  and  gate  breakdown  voltage  (BV)  before  and after annealing.

Fig. 4. (a) Comparison of the gate leakage current and gate breakdown voltage before and after 350 °C 5 min annealing; (b) Gate BV or maximum gate bias versus threshold voltage for p-GaN gate HEMTs fabricated by several groups.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00119v2-figure-94c9db1b-3401-4925-a30e-cee4b579c167.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00119v2-figure-c376f299-da26-4401-8b4d-cea8c9b2840c.jpg)

As illustrated in Fig. 4, in the case of forward VG bias, all the devices  have  a  considerable  increase  in  gate  leakage.  This should be due to the reduction of Φ𝐵 . After the annealing, the gate BV of the devices without graphene was 9.80 V whereas the  devices  with  graphene  broke  down  at  12.05  V.  To  our knowledge, this is the highest gate BV that has been reported in HEMTs with p-GaN Schottky gates. Fig. 7 summarize the gate BV or maximum gate bias versus VTH for p-GaN gate HEMTs fabricated by several groups. Compared with other reported pGaN gate HEMTs, our devices with graphene insertion exhibit the highest gate BV  and a relative high VTH. These improvements  are  crucial  for  p-GaN  gate  HEMT  device  for power switching applications.

To get further insights into the role of graphene on Ti/p-GaN interfaces, scanning transmission electron microscopy (STEM) images of the HEMTs were obtained. As shown in Fig. 5, the Ti/p-GaN  interface  quality  has  been  much  improved  by  the insertion of graphene. The thin darker regions pointed out by the yellow arrows in Fig. 5(a) were confirmed to be small voids or  TiN  islands  by  energy  dispersive  spectroscopy  (EDS),  as illustrated in the insets of Fig. 5(a). The inset figure on the left shows  that  the  darker  region  has  TiN,  while  the  right  one illustrates a void where only background signals/noise exist in EDS.  Meanwhile, the interface with graphene is more uniform and cleaner. This means that the graphene interlayer helped to reduce the formation of TiN and interface voids and maintain a more  stable  Ti/graphene/p-GaN  interface  during  annealing, contributing to a lower leakage current and a higher gate BV.

Fig. 5. Cross-section STEM of the HEMTs after 350  C 5 min annealing in the o gate  region  (a)  without  graphene;  Insets:  EDS  show  the darker  regions  are either TiN or voids; (b) with I-graphene. The Au/Ti/p-GaN interface has been much improved by graphene.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00119v2-figure-9589d70d-3fb7-40bc-babc-3954701a5e51.jpg)

## C. Mechanism Study with Ti/graphene/p-GaN Schottky

diodes

Besides the material analysis, Au/Ti/graphene/p-GaN Schottky contacts have been fabricated as seen in the inset of Fig.  6(a).  Considering  the  fact  that  the  I-graphene  and  Fgraphene had similar effects in the previous experiments, only I-graphene was studied here. This test structure consists of two Schottky  contacts  back-to-back  [29].  The  I-V  measurements were carried out in the bias range of 0 to 6 V. Before annealing,

the  systems  with  and  without  I-graphene  have  comparable current  density,  whereas  they  are  significantly  different  after 350  o C 5 minutes annealing.

The temperature dependence of the I-V characteristics  has also been studied for these systems to extract Φ𝐵 .  Taking the Mg doping concentration of 4 × 10 19  cm -3 into consideration, the value of 𝐸00/𝑘𝑇 is in the range between 0.85 and 1.34 in the examined temperature range. This implies that thermionic field emission  (TFE)  should  be  the  dominant  mechanism  in  our systems. Hence, the expression of the TFE reverse current was used to fit our experimental data [13, 30]

$$\text{used to fit our experimental data [13, 30] } I _ { s } = & \frac { A _ { c } A ^ { * } T \sqrt { \pi E _ { 0 0 } } } { k } \cdot \sqrt { q ( V - V _ { n } ) + \frac { q \Phi _ { B } } { c o s h ^ { 2 } ( \frac { E _ { 0 0 } } { k T } ) } } \quad \text{$\quad$BEN$} \\ & \quad \cdot e x p \left ( - \frac { q \Phi _ { B } } { E _ { 0 0 } \coth \left ( \frac { E _ { 0 0 } } { k T } \right ) } \right ) \quad ( 1 ) \quad \text{$\quad$D.\ } ^ { \prime } \\ / \. \. \. \. \quad \text{$\quad$the$}$$

$$k T$$

$$I _ { T F E } = I _ { s } \cdot e x p \left ( \frac { q V } { k T } - \frac { q V } { E _ { 0 0 } \coth \left ( \frac { E _ { 0 0 } } { k T } \right ) } \right ) \quad \text{(2)} \quad \text{other} \quad [ 3 1 ]$$

$$E _ { 0 0 } & = \frac { q h } { 4 \pi } \left | \frac { N _ { A } } { m ^ { * } \varepsilon } & ( 3 ) & \quad \ A \\ & \quad \text{i.e.}$$

where 𝑉 is the applied voltage, 𝐴𝑐 is the contact area, 𝐴 ∗ is the Richardson  constant, 𝑞 is the  elementary  charge, k is the Boltzmann constant, h is  Planck's constant, T is  the  absolute temperature, and 𝜀 and 𝑚 ∗ are the dielectric constant for GaN and the effective mass for holes, respectively. Φ𝐵 represents the Schottky barrier height of the metal(graphene)/p-GaN interface. In  our  calculation,  we  used  the  values  of 𝜀 = 8.9 𝜀 0 , 𝐴 ∗ = 27.9 A/cm 2 K 2 , and 𝑚 ∗ = 0.81 𝑚0.

Fig.  6.    (a)  I-V  characteristics  acquired  in  back-to-back  diodes.  Inset: Schematics of the sample structure; (b) Temperature dependence of the current measured at V = +0.2 V in back-to-back Schottky contacts. The symbols are measured data. The lines are the fitting curves.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00119v2-figure-f2ad17c7-0ed9-4eed-8119-83e5b960d2f8.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00119v2-figure-4d9e3f6b-2b1d-49cf-82b5-2028aa79523a.jpg)

The extracted Φ𝐵 from the data (Fig. 6(b)) is 2.08 eV for the contacts  without  graphene  and  2.09  eV  for  those  with  Igraphene, respectively.  After annealing the sample at 350 °C in N2 for 5 min, Φ𝐵 decreased to 1.65 eV (no Gr) and 1.89 eV (with graphene), which results in approximately one order of magnitude  smaller  current  in  the  sample  with  graphene.  The extracted Φ𝐵 are  summarized  in  Table  II.  These  data  are consistent with the experimental value reported in the literature for Ti/p-GaN interfaces [13].

It is worth mentioning that this back-to-back Schottky diodes experiment  was  conducted  on  p-GaN  wafer  without  any passivation or etching process. The metal/p-GaN interfaces in a HEMT  can  be  more  defective  due  to  the  ion  bombardment during the fabrication process (e.g. passivation deposition and gate dielectric etching).

## D. Analysis and Modeling of Gate Leakage Current

In this part, the gate current characteristics in Fig. 4(a) and the corresponding mechanism will be analyzed more thoroughly. The data will be fitted to a physical model from Ref. [31].  The  trap  depth  and  the  corresponding  prefactors  of  the HEMTs with/without graphene will be extracted.

As shown in Fig. 7, the gate structure includes two junctions, i.e.  the  metal  (graphene)/p-GaN  junction  (Schottky  junction) and the p-GaN/AlGaN/GaN junction (p-i-n junction). The gate leakage mechanisms are different in different gate bias regimes.

Fig. 7. Schematic representation of the Au/Ti/p-GaN/AlGaN/GaN HEMT and its equivalent circuit.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00119v2-figure-77b678b7-3256-43d4-a798-f9bfda30dd9d.jpg)

In the VG &lt; 0 regime, vertical gate current is blocked due to the  reverse  bias  of  the  p-i-n  junction.  An  electron  current  is likely  from the Schottky metal near the gate edges through a leakage path along the p-GaN sidewall and these electrons are emitted  into  the  2DEG  layer.  As  shown  in  Fig.  4(a),  the  IG with/without  graphene  at  reverse  bias  had  negligible  change after annealing even though the Schottky barrier changed. This further confirms that the dominant factor for IG at the negative bias  is  associated  with  the  surface  defects  caused  during  the fabrication process. A similar conclusion has also been reported for previous p-GaN gate HEMTs [31, 32]. According to Ref [31, 32], the dominant gate leakage mechanism associated with pGaN  surface  defects  is  found  to  be  Poole-Frenkle  emission (PFE) for the case of VG &lt; 0 as shown in Fig. 7(b), which can be described by:

$$J = C \, E \exp \left ( - \frac { q \left ( \Phi _ { t } - \beta \sqrt { E } \right ) } { \underline { \ k T } } \right ), \quad \quad ( 4 )$$

where 𝐶 = 𝑞𝑛𝜇𝑛 , 𝛽 = √𝑞/𝜋𝜖 is  the  Schottky  factor, 𝑘 is Boltzmann's constant, 𝑞𝛷𝑡 is the trap depth, and 𝐸 = 𝑉 𝐺𝑆 /𝐿𝐺𝑆 is the electric field, with 𝐿𝐺𝑆 the shortest distance between the gate and source metal.

The  temperature  dependent  IG-VG  of  the  HEMTs  after

annealing have been measured from 300 K to 450 K. The PFE model has been used to fit the data in the negative bias, with the trap depth 𝑞𝛷𝑡 and prefactor C as the fitting parameters (Fig. 8). The  fitting  results  are  illustrated  in  Fig.  8,  where  the  fitting curves are plotted as solid lines and symbols represent selected measurement points. The trap depths are 𝑞𝛷𝑡,𝐼-𝐺𝑟 = 0.199 𝑒𝑉 and 𝑞𝛷𝑡,𝑛𝑜-𝐺𝑟 = 0.165 𝑒𝑉 , respectively. The prefactor  C  in  the  HEMTs  without  graphene  is 𝐶𝑛𝑜-𝐺𝑟 𝐶𝐼-𝐺𝑟 = 585.70 47.46 = 12.34 times of that with I-graphene. This explains why I G in the HEMTs with/without graphene differ a lot in the asdeposited case even though their Φ𝐵 are comparable extracted in Section II-C. Graphene layers passivated the p-GaN surface resulting in the neutralization of interface states and, consequently, less electron leakage toward the gate foot along the p-GaN surface.

Fig. 8. Negative gate bias current from T = 300 to 450 K measured on HEMTs with  I-graphene and without graphene.  The symbols are selected measured data. The lines are the fitting curves using the PFE model.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00119v2-figure-00bb0304-c740-4fba-a55f-305354987520.jpg)

TABLE II

SUMMARY OF MODELLING RESULTS OF THE BACK-TO-BACK DIODES AND THE HEMTS GATE CURRENT

|              |                 | As Deposited   | 350 o C 5 min annealing   |
|--------------|-----------------|----------------|---------------------------|
| Φ 𝐵 (eV) in  | With I-graphene | 2.08           | 1.89                      |
| diodes       | No graphene     | 2.09           | 1.65                      |
| Φ 𝑡 (eV) in  | With I-graphene | \              | 0.199                     |
| HEMTs        | No graphene     | \              | 0.165                     |
| 𝐶 (Ω -1 ) in | With I-graphene | \              | 5.86 × 10 -7              |
| HEMTs        | No graphene     | \              | 4.75 × 10 -8              |

In the VG &gt; 0 regime, the p-i-n junction will be positive bias while the Schottky junction will be reverse bias. In the case of no-annealing,  it  is  found  that  the  IG  are  comparable  in  the regime of positive and negative gate bias in Fig 4(a). We deduce that  the  vertical  gate  current  is  also  small  since  the  Schottky barrier  is  large  enough.  The  graphene  contributes  to  a  lower gate leakage by reducing the interface defects similar to the VG &lt;  0  regime.  In  the  case  of  after-annealing,  the  gate  leakage current in positive bias is much larger than in negative bias. The dominant current shall be from the vertical gate current due to a lower Φ𝐵 in the Schottky junction. The voltage dropped at the p-i-n  junction  is  large  enough  to  turn  on  the  diode  and  the dominant conduction mechanism is found to be thermionic field emission.  Thus,  graphene  helps  to  reduce  the  gate  leakage current by maintaining a more stable interface and a higher Φ𝐵 after annealing as analyzed in Section II-C.

Based on these evidences, it can be deduced that graphene can help reduce the interface defects and maintain a more stable Au/Ti/p-GaN interface during annealing. In VG &gt; 0 regime, the larger Φ𝐵 contributes to a lower gate leakage current and  the higher VTH. Graphene can also prevent the decrease of gate BV during annealing. In the VG &lt; 0 regime, as the defects at the pGaN surfaces during the fabrication process are the dominant factor for gate leakage, graphene reduces the gate leakage by saturating the defects at the p-GaN surface. According to fitting the experimental data, it is found that graphene changes the trap depth 𝑞𝛷𝑡 from 0.165 eV to 0.199 eV and reduces the prefactor C by 12.3 times.

## IV. CONCLUSION

In this work, intrinsic and fluorinated graphene were investigated as gate insertion layers for normally-OFF p-GaN HEMTs, which formed Au/Ti/graphene/p-GaN interfaces in the middle  and  Au/Ti/graphene/  SiN x on  the  two  sides.  50  times larger ION/IOFF ratios, 0.30 V higher VTH increase, 50 times offstate gate leakage reduction have been achieved by the insertion of  graphene.  For  the  first  time,  12.1  V  gate  BV  has  been achieved  with  I-graphene  for  Schottky  gate  p-GaN  HEMTs. This is considered to be the result of a 0.24 eV higher Φ𝐵 , and the better graphene/p-GaN interfaces. In the negative gate bias, I G has been fitted to PFE model, which revealed that graphene layers contribute to a 0.034 eV larger trap depth and a 12.3-time smaller prefactor. As single-layer graphene can be prepared in wafer-size areas [33], This approach is mass-production compatible and very effective in improving the ION/IOFF ratios and increasing VTH and gate BV of p-GaN gate HEMTs.

## ACKNOWLEDGMENT

The work was conducted at Materials Characterization and Preparation Center (MCPC) at SUSTech, and we acknowledge the technical support from the staff and engineers at MCPC. Dr. Mengyuan  Hua  from  SUSTech  is  acknowledged  for  useful discussions.

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Guangnan Zhou Zeyu Wan Gaiying Yang Yang Jiang Robert Sokolovskij Hongyu Yu Guangrui Xia
Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates
In this work, single-layer intrinsic and fluorinated graphene were
investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which
wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and
Ti/graphene/ SiNx on the two sides. Compared to the Au/Ti/p-GaN HEMTs without
graphene, the insertion of graphene can increase the ION/IOFF ratios by a
factor of 50, increase the VTH by 0.30 V and reduce the off-state gate leakage
by 50 times. Additionally, this novel gate structure has better thermal
stability. After thermal annealing at 350 {\deg}C, gate breakdown voltage holds
at 12.1 V, which is first reported for Schottky gate p-GaN HEMTs. This is
considered to be a result of the 0.24 eV increase in Schottky barrier height
and the better quality of the Ti/graphene/p-GaN and Ti/graphene/SiNx
interfaces. This approach is very effective in improving the Ion/Iff ratio and
gate BV of normally-OFF GaN HEMTs.