## Phonon screening of excitons in atomically thin semiconductors

Woncheol Lee, 1  Antonios M. Alvertis, 2,3,4 Zhenglu Li, 4,3,5 Steven G. Louie, 3,4 Marina R. Filip, 6 Jeffrey B. Neaton, 3,4,7 and Emmanouil Kioupakis 8

- 1 Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA
- 2 KBR, Inc. NASA Ames Research Center, Moffett Field, California 94035, United States 3 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
- 4 Department of Physics, University of California Berkeley, Berkeley, California 94720, USA 5 Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, USA
- 6 Department of Physics, University of Oxford, Oxford OX1 3PJ, United Kingdom
- 7 Kavli Energy NanoScience Institute at Berkeley, Berkeley, 94720 California, USA
- 8 Department of Materials Science and Engineering, University of Michigan, Ann Arbor,

Michigan 48109, USA

## Abstract

Atomically  thin  semiconductors,  encompassing  both  2D  materials  and  quantum  wells, exhibit a pronounced enhancement  of excitonic effects due to geometric confinement. Consequently,  these  materials  have  become  foundational  platforms  for  the  exploration  and utilization of excitons. Recent ab initio studies have demonstrated that phonons can substantially screen electron-hole interactions in bulk semiconductors and strongly modify the properties of excitons. While excitonic properties of atomically thin semiconductors have been the subject of extensive theoretical investigations, the role of phonon screening on excitons in atomically thin structures  remains  unexplored.  In  this  work,  we  demonstrate  via ab  initio  GW -Bethe-Salpeter equation calculations that phonon screening can have a significant impact on optical excitations in atomically thin semiconductors. We further show that the degree of phonon screening can be tuned by structural engineering. We focus on atomically thin GaN quantum wells embedded in AlN and identify specific phonons in the surrounding material, AlN, that dramatically alter the lowest-lying exciton  in  monolayer  GaN  via  screening.  Our  studies  provide  new  intuition  beyond  standard models  into  the  interplay  among  structural  properties,  phonon  characteristics,  and  exciton properties in atomically thin semiconductors, and have implications for future experiments.

Atomically thin two-dimensional (2D) semiconductors, composed of a few atomic layers, are  known  to  exhibit  enhanced  electron-electron  and  electron-hole  interactions  due  to  their intrinsic geometric confinement [1-4], leading to large exciton binding energies and light-matter interactions compared to their three-dimensional (3D) counterparts [5] and giving rise to intriguing phenomena such as exciton coherence and condensation [6, 7]. These characteristics have found device applications ranging from light-emitting diodes (LEDs) and solar cells [8-10] to excitonic switches  and  transistors  [11-12].  The  accurate  determination  of  the  exciton  binding  energy  of atomically  thin  semiconductors,  a  central  quantity  that  dictates  the  stability  of  excitons,  is indispensable for a thorough understanding of excitonic processes in 2D materials.

In  this  context, ab  initio many-body  perturbation  theory  calculations  within  the GW approximation and the Bethe-Salpeter equation (BSE) approach have been employed to determine the exciton binding energy in various material systems, such as inorganic crystals [13-15], organic molecules [16], 2D materials [1, 17, 18], and heterostructures [19-21]. Most calculations with the ab initio GW -BSE method are performed in a limit where the nuclei are clamped and only account for the screening of the electron-hole Coulomb attraction by other electrons [13, 22], which in the static  screening  approximation  corresponds  to  the  optical  dielectric  constant (𝜀 ∞ ) .  However, phonons  can  play  an  important  role  in  the  screening  of  excitons  [23-28].  In  polar  materials, longitudinal optical (LO) phonons can generate macroscopic polarization fields, which lead to an increased low-frequency (~THz) contribution to the dielectric constant beyond that of electrons [29]. Relatedly, an ad hoc effective dielectric constant, intermediate between optical and static dielectric constants, has been used in the Wannier-Mott model to interpret recent experiments [30].

Recent  work  introduced  an  approach  for  incorporating  phonon-screening  effects  into calculations of excitonic properties [23], with Ref. [24] extending this to a fully ab initio approach, including finite temperature effects. These studies revealed that phonon screening significantly influences exciton binding energies in bulk polar materials, while highlighting their significant temperature dependence and novel screening mechanisms, such as via multiple LO modes or via acoustic  modes.  However,  the  effect  of  phonon  screening  on  atomically  thin  semiconductors remains unexplored. While the exciton binding energy is usually much greater than typical phonon energies in low-dimensional material systems, suggesting that phonon screening may be safely neglected [31, 32], this assumption has not been tested with first-principles calculations. Moreover, the presence of encapsulating or barrier layers, a common feature in optoelectronic and excitonic devices involving 2D materials, can introduce a complex interplay between phonons and excitons that cannot be accounted for with simple models of electron-phonon interactions.

In this Letter, we investigate the temperature-dependent phonon screening of excitons in atomically  thin  semiconductors  using  first-principles GW -BSE  calculations.  We  focus  on atomically thin GaN quantum wells embedded within AlN quantum barriers, which have recently gained much interest due to the presence of quantum-confined carriers, efficient deep-UV emission, and  room-temperature-stable  excitons  in  a  system  composed  of  conventional  semiconductor materials [33-35]. The ability to control the thickness of both quantum wells and barriers provides the  opportunity  to  quantify  the  intricate  interplay  between  geometrical  confinement,  excitonic effects, and phonon screening of excitons in low-dimensional systems. We demonstrate that the extent of phonon screening exhibits significant variability depending on the degree of quantum confinement,  offering  a  pathway  to  finely  tune  exciton  properties.  The  presence  of  quantum barriers results in the emergence of a phonon screening mechanism distinct from those observed in 3D bulk materials. Importantly, we show that the phonon screening properties of the quantum barriers or substrate can be equally important in determining the nature of low-lying excitons as that of electronic screening.

We investigate the phonon screening of excitons in atomically thin GaN quantum wells of varying thicknesses using ab initio many-body perturbation theory with the GW -BSE framework. Following Ref. [24], the finite-temperature contribution of phonon screening to the direct electronhole kernel is expressed as:

$$\text{hole kernel is expressed as} \colon \\ K ^ { p h } _ { S, S ^ { \prime } } ( \Omega, T ) = & - \sum _ { c v k ; c ^ { \prime } v ^ { \prime } k ^ { \prime } ; \nu } A ^ { S ^ { * } } _ { c v k } g _ { c c ^ { \prime } ; \nu } ( k ^ { \prime }, \mathbf q ) g ^ { * } _ { v v ^ { \prime } ; \nu } ( k ^ { \prime }, \mathbf q ) A ^ { S ^ { \prime } } _ { c ^ { \prime } v ^ { \prime } k ^ { \prime } } \\ & \times \left [ \frac { N _ { B } ( \omega _ { \mathbf q v }, T ) + 1 } { \Omega - \Delta _ { c ^ { \prime } k ^ { \prime } ; v k } - \omega _ { \mathbf q v } + i \eta } + \frac { N _ { B } ( \omega _ { \mathbf q v }, T ) + 1 } { \Omega - \Delta _ { c k ; v ^ { \prime } k ^ { \prime } } - \omega _ { \mathbf q v } + i \eta } \right ] \\ & + \left [ \frac { N _ { B } ( \omega _ { \mathbf q v }, T ) } { \Omega - \Delta _ { c ^ { \prime } k ^ { \prime } ; v k } + \omega _ { \mathbf q v } + i \eta } + \frac { N _ { B } ( \omega _ { \mathbf q v }, T ) } { \Omega - \Delta _ { c k ; v ^ { \prime } k ^ { \prime } } + \omega _ { \mathbf q v } + i \eta } \right ] \quad,$$

where 𝑐 and 𝑣 represent band indices for electrons and holes, respectively, while 𝐤 and 𝐪 denote the indices for electron and phonon momentum, respectively. 𝐴𝑐𝑣𝐤 𝑆 = ⟨𝑐𝑣𝐤|𝑆⟩ are the coefficients of the exciton wave function in state 𝑆 , written in the free electron and hole basis; 𝑔𝑛𝑚;𝜈 (𝐤, 𝐪) = ⟨𝑚𝐤 + 𝐪|𝛥𝑣|𝑛𝐤⟩ represents  the  electron-phonon  matrix  elements,  where 𝛥𝑣 is  the  first-order change  of  the  self-consistent  potential; 𝑁𝐵 the  Bose-Einstein  distribution  of  phonon  modes  at temperature 𝑇 ;  and 𝛥𝑐𝐤;𝑣 ′ 𝐤 ′ = 𝐸𝑐𝐤 -𝐸𝑣 ′ 𝐤 ′ is  the  difference  between  single-particle  excitation energies,  computed here within  the GW approximation. The first term represents screening of excitons due to phonon emission, while the second term, only relevant at finite temperature, is due to  phonon absorption.  We also highlight the connection of  Eq. (1) to previous theoretical  and experimental works on excitonic lines, as discussed in Ref. [36-38]. Specifically, we note that the imaginary part of Eq. (1) provides the rate of exciton dissociation into a free electron-hole pair, 𝜏 𝑆 -1 (𝑇) = 2|Im[𝐾 𝑆𝑆 𝑝ℎ (Ω𝑆, 𝑇)]| [39-42]. The scattering towards a free electron-hole pair contributes to the broadening of the absorption line, along with other processes like exciton-exciton scattering [36-38] and Auger-Meitner recombination. Additionally, the real part of the exciton-phonon selfenergy, Δ𝐸𝐵 (𝑇) = Re[𝐾 𝑆𝑆 𝑝ℎ (Ω𝑆 , 𝑇)] ,  provides  the  temperature-dependent  renormalization  of  the exciton (binding) energy.

We perform GW -BSE calculations using the BerkeleyGW package [43,13,44] to obtain electron-hole  amplitude  values,  interpolating  the  electron-hole  kernel  onto  a  dense Γ -centered patch in the Brillouin zone, which encompasses the region where the exciton coefficients 𝐴𝑐𝑣𝐤 𝑆 assume  non-negligible  values  and  which  is  necessary  to  achieve  convergence  of  the  exciton binding  energy  [15].  The  electron-phonon  matrix  element  calculations  are  computed  within density-functional perturbation theory (DFPT) [45] on a coarse grid, and interpolated onto the same  dense Γ -centered  patch  as  for  the  exciton  calculations,  by  employing  Wannier-Fourier interpolation [46] using the EPW code [47]. (We note that while a more consistent description can in principle be achieved by using the GW perturbation theory [48], we relegate such calculations to  future  work.)  Gauge  consistency  between  the  exciton  coefficients  and  the  electron-phonon matrix  elements  is  ensured  through  the  method  described  in  Ref.  [49]  and  Ref.  [24].  Phonon screening modifies the BSE kernel, and we obtain the change in the exciton binding energy at temperature 𝑇 within  perturbation  theory,  as Δ𝐸𝐵 (𝑇) = Re[𝐾 𝑆𝑆 𝑝ℎ (Ω𝑆 , 𝑇)] .  Computational  details are given in the Supplemental Material. We note here that our approach is grounded within manybody perturbation theory and considers electron-phonon interactions to the lowest order, making it  primarily  applicable  in  the  weak  electron-phonon  coupling  regime  [50].  The  description  of strong electron-phonon coupling and polaron formation, as discussed in Ref. [51], fall beyond the scope  of  our  present  work.  However,  it  has  been  discussed  elsewhere  that  accounting  for  the formation of electron- and hole-polarons, as well as the interference between these, could further contribute towards  reducing  the exciton  binding  energy at finite temperatures  [50,  23]. Additionally, multi-phonon processes, which are not included in our study, can become significant near room temperature for certain systems [52].

The quasiparticle gap and exciton binding energy of atomically thin GaN quantum wells (QWs) embedded in AlN is plotted as a function of well thickness in Fig. 1. Optical absorption spectra without the inclusion of phonon-screening effects are presented in Supplementary Material (Fig. S2). Our calculation predicts excitonic emission from atomically GaN in the deep UV range, showing good agreement with the experimentally measured photoluminescence spectra (detailed comparison included in the Supporting Information). As the thickness of GaN is reduced to the monolayer (ML) limit, the quasiparticle band gap increases significantly  compared to its bulk value of 3.5 eV due to quantum confinement [33-35]. Our calculations indicate that the exciton binding energy using the standard clamped-ion ab initio GW -BSE formalism without the inclusion of phonon screening effects (hereafter termed 'bare') also increases as the thickness is reduced, reaching its maximum value of (0.24 eV) for the monolayer. The bare exciton binding energy in atomically thin GaN QWs is much higher than the value computed in bulk GaN (0.065 eV) [15], which can be attributed to geometrical confinement effects, as predicted analytically for quasi-2D excitons [53, 54]. We also note that these values are obtained when neglecting phonon screening, leading to a reduced screening of the Coulomb interaction and thus higher exciton binding energy when compared with the experimental value (0.021 -0.028 eV) [55-57]. Using the first-principles phonon-screening formalism and computational workflow [23, 24], we found the exciton binding energy of bulk GaN to be 46 meV at 300K, which aligns more closely with experimental data [24]. We now extend our approach to evaluate the effect of phonon screening on excitons and obtain the exciton binding energy of the GaN QWs at room temperature (Fig. 1b). Our computed value for  the  binding  energy  of  1  ML  GaN  when  including  phonon  screening  is  0.160  eV  at  room temperature, and this value decreases to 0.104 eV as the well thickness is increased to 4 ML. The incorporation  of  phonon  screening  in  the  BSE  formalism  results  in  a  significantly  decreased binding  energy,  however  the  calculated  exciton  binding  energy  remains  sufficiently  high, demonstrating the room-temperature stability of excitons in these atomically thin GaN structures.

Next, we investigate the specific mechanism through which phonon screening affects the exciton binding energy in  these  atomically  thin semiconductors. In  Fig. 2(a), we illustrate the temperature dependence of the relative reduction in the exciton binding energy due to phonon screening for varying well thickness (see Fig. S3 for absolute magnitude of the reduction). Our findings suggest a monotonic decrease in the influence of phonon screening as the well thickness is reduced. This observation aligns with standard expectations that excitons with larger binding energies are less susceptible to the effects of phonon screening.

To further understand the microscopic mechanism behind the phonon screening of lowlying  excitons  in  thin  GaN  layers  embedded  in  AlN,  we  analyze  the  individual  phonon  mode contributions (Fig. 2b-2d). In Fig. 2b, we examine the contribution of the polar longitudinal optical (LO) phonon mode of GaN to the screening of excitons. Our findings reveal that the LO phonon along the in-plane direction is the primary mode governing phonon screening. We observe that, as in  the  case  of  bulk  GaN  [24],  the  LO  phonon  exhibits  a  pronounced  influence  on  the  phonon screening of excitons in thin GaN layers, even with their larger exciton binding energies. This can be in part attributed to the higher LO phonon frequency of 110 meV in the quantum well structures (Figure S6), compared to 84 meV in bulk GaN [24], primarily resulting from aluminum (Al) atom contributions. The interaction between charge carriers and polar LO modes is characterized by the Fršhlich-type interaction [58], which diverges at the long-wavelength limit (𝑞 → 0) [59] and is expected to dominate electron-phonon interactions in polar materials [60-62]. Since the exciton wavefunction is highly localized in reciprocal space perpendicular to the GaN QW normal, only the  electron-phonon interactions  with small phonon momenta (𝑞 → 0) effectively  contribute  to the screening, which corresponds to the long-wavelength limit where the LO phonon dominates. The contribution of the LO phonon mode exhibits the same pattern as the total phonon screening, as shown in Fig. 2(a), with excitons exhibiting stronger binding being less susceptible to phonon screening. These outcomes are in good agreement with previous analysis of bulk materials [23, 24]. Furthermore, Fig. 2(b) illustrates that at lower temperatures, the screening exhibits a weak dependence  on  temperature,  and  is  dominated  by  phonon  emission.  As  temperature  rises,  the phonon  occupation  term, 𝑁𝐵 in Eq.  (1), becomes  more  pronounced,  leading  to  stronger temperature dependence, which is driven by both phonon absorption and emission.

Interestingly, we find that the longitudinal acoustic (LA) phonons also contribute to the screening of excitons, albeit to a lesser extent than the LO phonons, as has also been found for bulk  GaN  [24].  These  LA  modes  are  associated  with  piezoelectric-type  electron-phonon interactions  [63,  64],  a  byproduct  of  the  polar  symmetry  of  the  structure,  which  are  typically weaker  than  the  Fršhlich  interaction.  An  intriguing  observation  is  that  the  degree  of  phonon screening due to LA modes increases as the GaN thickness layer is increased. This outcome can be attributed to the fact that in our supercell calculations, the in-plane lattice constant is fixed at the value of bulk AlN (𝑎AlN = 3.112Å) [65], mimicking the conditions of pseudomorphic growth in experiments [33, 34]. As a result, strain is induced in the GaN layers, and the effect of strain becomes more pronounced as the thickness of the GaN layer increases. This, in turn, enhances the effect of the piezoelectric interaction, reflected by the increased magnitude of the electron-phonon matrix elements for LA phonons (see Fig. S4 of the Supplementary Material). In contrast to the screening by LO phonons, which exhibit a moderate temperature dependence, the screening by piezoelectric LA phonons is strongly influenced by temperature. This distinction arises due to the LA phonons being positioned in the  low-frequency  range  of  the  phonon  dispersion  (Fig.  S6). Consequently, as the temperature increases, LA phonons are more readily occupied and play a significant role in exciton screening, despite their lower frequency compared to LO phonons.

Beyond screening from LO and LA phonons, there are contributions from other phonons that cannot be attributed to either the Fršhlich or the piezoelectric interaction, as depicted in Fig. 2(d).  To  uncover  the  origins  of  the  additional  phonon  screening,  we  analyze  the  displacement patterns associated with these phonon modes. We find that these phonons exhibit displacements purely along the polar c -axis direction, and their oscillations are confined within the AlN quantum barrier region, as shown in Fig. 3(a) (also see Fig. S5 of the Supplementary Material). We classify these modes as half-space (HS) polar optical modes, which are predicted to exist in interfaces, quantum wells, and superlattices [66-69]. These HS modes are primarily associated with highfrequency LO phonons of the AlN quantum barrier along the z-axis (Fig. S6). However, compared to  bulk  AlN  LO  phonons,  which  propagate  over  the  entire  volume,  these  HS  modes  remain confined only within the AlN barriers even in the 𝑞 → 0 limit, showing the characteristics of a standing wave with an effective finite  momentum  along the  z-axis (𝑞𝑧 = 𝑛𝜋/𝐿 , 𝑛 = integer) . The  emergence  of  the  quantized  effective  phonon  momenta  stems  from  the  modulation  of periodicity along the z-axis, in close analogy with the quantization of energy levels observed in electrons confined within a potential well [69]. As these HS modes are localized within the AlN barrier, their contribution to the screening of excitons in the GaN well highlights the importance of the vibrational characteristics of the quantum barrier or the substrate materials on the screening of excitons confined within the optically-active 2D layer.

In general, the interaction between HS modes associated with the quantum barrier and the charge carriers in a QW has been regarded as insignificant in the past [70]. This is mainly because the interaction had been previously characterized by how much the electronic wavefunctions of charge carriers extend into the barrier region [66, 69]. For relatively thick QWs (with a thickness of  more  than  a  few  nm)  and  for  sufficiently  high  energy  barriers  ensuring  effective  carrier confinement, the effect of HS modes is negligible because the electron wavefunctions associated with quantum-well states remain confined within the QW region. However, this situation differs when considering atomically thin wells. When the thickness of the GaN QW is reduced to the atomic-scale limit, a significant portion of the wavefunction of the quantum-well state extends into the AlN barrier region, as illustrated in Fig. 3(b) and 3(c) (also see Fig. S7 of the Supplementary Material). This is primarily attributed to the evanescent nature of the carrier wavefunction that arises  from  the  finite  energetic  height  of  the  quantum  barrier  and  from  the  extreme  quantum confinement, which leads to a sharp increase in the energy levels within the QW [33, 34]. The reduced energy difference between the barrier and the quantum-confined state enhances the spread of carrier wavefunctions into the barrier region.

To gain further insights on the effect of these HS modes, we analyze the electron-phonon and hole-phonon matrix elements associated with the HS modes, for electrons at the conduction band minimum and holes at the valence band maximum, as shown in Fig. 3(d) for the case of the electrons (also see Fig. S4(c) of the Supplementary Material). Firstly, the matrix elements exhibit a  sharp  increase  in  the  long-wavelength  limit (𝑞 → 0) ,  similar  to  a  Fršhlich-type  interaction. However,  due  to  the  introduction of a non-zero  effective momentum  along  the  z-axis (𝑞𝑧 →𝑞𝑧 + 𝑛𝜋/𝐿) , the electron-phonon matrix elements of HS modes do not diverge in the longwavelength limit. The absence of a divergence here is consistent with recent findings regarding the  non-diverging  Fršhlich  interaction  in  2D  slab  calculations  [71].  As  a  result,  the  electronphonon matrix elements of HS modes show a less prominent increase at long wavelengths when compared to  those  of  the  LO  phonon  along  the  in-plane  direction.  Secondly,  we  observe  that electrons exhibit a more pronounced coupling to the HS modes compared to holes in the 2 - 4 ML GaN  supercell  structures.  We  attribute  this  trend  to  the  greater  spatial  extent  of  the  electron wavefunction within the barrier region compared to the hole wavefunction, which is a consequence of the substantially lighter effective mass of electrons [72]. However, in the 1 ML GaN limit, holes display a slightly stronger interaction with HS modes than electrons. We interpret the 1 ML case as the extreme 2D limit, where the majority of the supercell behaves as a half-space, as illustrated in Fig. S5(a), and thereby a large part of the carrier wavefunctions are affected by HS modes. Lastly, we find that the influence of the HS modes becomes more pronounced as the thickness of the QW is reduced, in agreement with the prior discussion on the extent of the carrier wavefunction into the barriers. In summary, for these and other atomically thin semiconductor QW structures, we can expect from our calculations that the enhanced interaction between charge carriers within the QW and the HS modes within the quantum barrier or the substrate contributes significantly to the phonon screening of excitons.

Finally,  we  note  that  the  presence  of  HS  modes  is  anticipated  in  various  systems  with confinement, not limited to infinitely repeating supercells but also including finite-size van der Waals stacks and isolated quantum wells. Moreover, the strong contribution by HS modes in the surrounding materials agrees with recent findings that emphasize the importance of substrates or quantum  barriers  on  the  properties  of  atomically  thin  semiconductors.  For  example,  substrate screening results in significant bandgap renormalization and a substantial reduction of the exciton binding  energy  in  these  systems  [73-76].  Other  studies  have  also  explored  the  influence  of substrate  screening  on  exciton  transport  [77].  Our  calculations  demonstrate  an  additional mechanism through which the surrounding environment can impact the properties of atomically thin  semiconductors  and  underscore  the  important  role  of  the  substrate  or  quantum  barrier  in shaping their electronic, optical, and excitonic characteristics.

In summary, we performed a microscopic analysis of the phonon screening of excitons in atomically thin semiconductors in quantum well structures. Our investigation revealed the crucial role played by HS modes from neighboring materials, alongside an amplified contribution from piezoelectric  LA  modes.  Moreover,  we  found  that  the  impact  of  the  LO  phonon  on  exciton screening is more pronounced in atomically thin GaN compared to bulk GaN, owing to the higher frequency of the LO phonon in this system. Such distinctive phonon screening attributes clearly differentiate atomically thin semiconductors from conventional 3D bulk materials. These findings highlight the importance of the substrate or barrier materials, as they offer control over quantum confinement, strain, and, as now demonstrated, phonon screening of excitons. Our findings open novel pathways for manipulating the properties of excitons in 2D materials and provide valuable insights  for  the  development  and  engineering  of  nano-scale  devices  based  on  atomically  thin semiconductors.

## Acknowledgement

This work is supported by the Computational Materials Sciences Program funded by the U.S. Department of Energy (DOE) Office of Science, Basic Energy Sciences (BES) under Award No. DE-SC0020129, which supported the investigations of electron-phonon coupling in atomically thin nitride heterostructures, and by the Theory of Materials FWP, which provided the formalism and methods for the phonon-screening of excitons  and the Center for Computational Study of Excited-State Phenomena in Energy Materials (C2SEPEM) as part of the Computational Materials Sciences  Program,  which  provided  advanced  codes  for  excited-state  calculations  based  on  the BerkeleyGW  software,  at  the  Lawrence  Berkeley  National  Laboratory,  funded  by  the  U.S. Department  of  Energy,  Office  of  Science,  Basic  Energy  Sciences,  Materials  Sciences  and Engineering  Division,  under  Contract  No.  DE-AC02-05CH11231.  The  work  is  also  partially supported by the National Science Foundation under Grant No. OAC-2103991 in the development of interoperable software enabling the EPW and BerkeleyGW calculations with consistent gauge. Computational resources were provided by the National Energy Research Scientific Computing (NERSC) Center, a U.S. Department of Energy (DOE) Office of Science User Facility supported under contract No. DE-AC02-05CH11231.  M.R.F.  acknowledges  support  from  the  UK Engineering and Physical Sciences Research Council (EPSRC), grants EP/V010840/1; EP/X038777/1.

## References

| [1]   | D. Y. Qiu, F. H. Da Jornada, and S. G. Louie, Optical Spectrum of MoS 2 : Many-Body Effects and Diversity of Exciton States , Phys. Rev. Lett. 111 , 216805 (2013).                                                                                                          |
|-------|------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------|
| [2]   | K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, 2D Materials and van Der Waals Heterostructures , Science (80-. ). 353 , (2016).                                                                                                                         |
| [3]   | X. Duan, C. Wang, A. Pan, R. Yu, and X. Duan, Two-Dimensional Transition Metal Dichalcogenides as Atomically Thin Semiconductors: Opportunities and Challenges , Chem. Soc. Rev. 44 , 8859 (2015).                                                                           |
| [4]   | Y. Wu, P. Wang, W. Lee, A. Aiello, P. Deotare, T. Norris, P. Bhattacharya, M. Kira, E. Kioupakis, and Z. Mi, Perspectives and Recent Advances of Two-Dimensional III- Nitrides: Material Synthesis and Emerging Device Applications , Appl. Phys. Lett. 122 , 160501 (2023). |
| [5]   | M. Kira and S. W. Koch, Semiconductor Quantum Optics (Cambridge University Press, 2011).                                                                                                                                                                                     |
| [6]   | G. Wang, X. Marie, B. L. Liu, T. Amand, C. Robert, F. Cadiz, P. Renucci, and B. Urbaszek, Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers , Phys. Rev. Lett. 117 , 187401 (2016).                                                          |
| [7]   | Z. Wang, D. A. Rhodes, K. Watanabe, T. Taniguchi, J. C. Hone, J. Shan, and K. F. Mak, Evidence of High-Temperature Exciton Condensation in Two-Dimensional Atomic Double Layers , Nature 574 , 76 (2019).                                                                    |
| [8]   | W. Wen, L. Wu, and T. Yu, Excitonic Lasers in Atomically Thin 2D Semiconductors , ACS Mater. Lett. 2 , 1328 (2020).                                                                                                                                                          |
| [9]   | T. Mueller and E. Malic, Exciton Physics and Device Application of Two-Dimensional Transition Metal Dichalcogenide Semiconductors , Npj 2D Mater. Appl. 2 , 29 (2018).                                                                                                       |
| [10]  | Y. Wu et al., III-Nitride Nanostructures: Emerging Applications for Micro-LEDs, Ultraviolet Photonics, Quantum Optoelectronics, and Artificial Photosynthesis , Prog. Quantum Electron. 85 , 100401 (2022).                                                                  |
| [11]  | A. Ciarrocchi, F. Tagarelli, A. Avsar, and A. Kis, Excitonic Devices with van Der Waals Heterostructures: Valleytronics Meets Twistronics , Nat. Rev. Mater. 7 , 449 (2022).                                                                                                 |
| [12]  | Y. Liu, K. Dini, Q. Tan, T. Liew, K. S. Novoselov, and W. Gao, Electrically Controllable Router of Interlayer Excitons , Sci. Adv. 6 , eaba1830 (2020).                                                                                                                      |
| [13]  | M. Rohlfing and S. G. Louie, Electron-Hole Excitations and Optical Spectra from First Principles , Phys. Rev. B 62 , 4927 (2000).                                                                                                                                            |

| [14]   | W. Lee, Z. Lyu, Z. Li, P. B. Deotare, and E. Kioupakis, Spin - Orbit Effects on the Electronic and Optical Properties of Lead Iodide , Appl. Phys. Lett. 122 , 212110 (2023).                                                                                              |
|--------|----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------|
| [15]   | A. M. Alvertis, M. Del Ben, H. Felipe, D. Y. Qiu, M. R. Filip, and J. B. Neaton, Importance of Nonuniform Brillouin Zone Sampling for Ab Initio Bethe-Salpeter Equation Calculations of Exciton Binding Energies in Crystalline Solids , Phys. Rev. B 108 , 235117 (2023). |
| [16]   | F. Bruneval, S. M. Hamed, and J. B. Neaton, A Systematic Benchmark of the Ab Initio Bethe-Salpeter Equation Approach for Low-Lying Optical Excitations of Small Organic Molecules , J. Chem. Phys. 142 , 244101 (2015).                                                    |
| [17]   | Z. Jiang, Z. Liu, Y. Li, and W. Duan, Scaling Universality between Band Gap and Exciton Binding Energy of Two-Dimensional Semiconductors , Phys. Rev. Lett. 118 , 266401 (2017).                                                                                           |
| [18]   | D. A. Laleyan, W. Lee, Y. Zhao, Y. Wu, P. Wang, J. Song, E. Kioupakis, and Z. Mi, Epitaxial Hexagonal Boron Nitride with High Quantum Efficiency , APL Mater. 11 , 051103 (2023).                                                                                          |
| [19]   | E. Torun, H. P. C. Miranda, A. Molina-S‡nchez, and L. Wirtz, Interlayer and Intralayer Excitons in MoS2/WS2 and MoSe2/WSe2 Heterobilayers , Phys. Rev. B 97 , 245427 (2018).                                                                                               |
| [20]   | K. Zollner, P. E. Faria Junior, and J. Fabian, Proximity Exchange Effects in MoSe2 and WSe2 Heterostructures with CrI3: Twist Angle, Layer, and Gate Dependence , Phys. Rev. B 100 , 085128 (2019).                                                                        |
| [21]   | M. H. Naik et al., Intralayer Charge-Transfer MoirŽ Excitons in van Der Waals Superlattices , Nature 609 , 52 (2022).                                                                                                                                                      |
| [22]   | G. Onida, L. Reining, and A. Rubio, Electronic Excitations: Density-Functional versus Many- Body Green's -Function Approaches , Rev. Mod. Phys. 74 , 601 (2002).                                                                                                           |
| [23]   | M. R. Filip, J. B. Haber, and J. B. Neaton, Phonon Screening of Excitons in Semiconductors: Halide Perovskites and Beyond , Phys. Rev. Lett. 127 , 067401 (2021).                                                                                                          |
| [24]   | A. M. Alvertis, J. B. Haber, Z. Li, J. N. Christopher, S. G. Louie, M. R. Filip, and J. B. Neaton, Phonon Screening and Dissociation of Excitons at Finite Temperatures from First Principles , arXiv:2312.03841 (2023).                                                   |
| [25]   | P. Umari, E. Mosconi, and F. De Angelis, Infrared Dielectric Screening Determines the Low Exciton Binding Energy of Metal-Halide Perovskites , J. Phys. Chem. Lett. 9 , 620 (2018).                                                                                        |

| [26]   | L. Adamska and P. Umari, Bethe-Salpeter Equation Approach with Electron-Phonon Coupling for Exciton Binding Energies , Phys. Rev. B 103 , 075201 (2021).                                                                                                                                  |
|--------|-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------|
| [27]   | F. Bechstedt and J. FurthmŸller, Influence of Screening Dynamics on Excitons in Ga 2 O 3 Polymorphs , Appl. Phys. Lett. 114 , 122101 (2019).                                                                                                                                              |
| [28]   | A. Schleife, M. D. Neumann, N. Esser, Z. Galazka, A. Gottwald, J. Nixdorf, R. Goldhahn, and M. Feneberg, Optical Properties of In 2 O 3 from Experiment and First-Principles Theory: Influence of Lattice Screening , New J. Phys. 20 , 053016 (2018).                                    |
| [29]   | C. Kittel and P. McEuen, Introduction to solid state physics (John Wiley &Sons, New York, 2018).                                                                                                                                                                                          |
| [30]   | A. Miyata, A. Mitioglu, P. Plochocka, O. Portugall, J. T.-W. Wang, S. D. Stranks, H. J. Snaith, and R. J. Nicholas, Direct Measurement of the Exciton Binding Energy and Effective Masses for Charge Carriers in Organic - Inorganic Tri-Halide Perovskites , Nat. Phys. 11 , 582 (2015). |
| [31]   | V. Perebeinos, J. Tersoff, and P. Avouris, Scaling of Excitons in Carbon Nanotubes , Phys. Rev. Lett. 92 , 257402 (2004).                                                                                                                                                                 |
| [32]   | L. M. Herz, How Lattice Dynamics Moderate the Electronic Properties of Metal-Halide Perovskites , J. Phys. Chem. Lett. 9 , 6853 (2018).                                                                                                                                                   |
| [33]   | D. Bayerl, S. Islam, C. M. Jones, V. Protasenko, D. Jena, and E. Kioupakis, Deep Ultraviolet Emission from Ultra-Thin GaN/AlN Heterostructures , Appl. Phys. Lett. 109 , 241102 (2016).                                                                                                   |
| [34]   | A. Aiello et al., Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures , Nano Lett. 19 , 7852 (2019).                                                                                                                   |
| [35]   | A. A. Toropov et al., Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet , Nano Lett. 20 , 158 (2020).                                                                                                 |
| [36]   | G. H. Li, A. R. Go-i, K. Syassen, and M. Cardona, Intervalley Scattering Potentials of Ge from Direct Exciton Absorption under Pressure , Phys. Rev. B 49 , 8017 (1994).                                                                                                                  |
| [37]   | S. Zollner, J. Kircher, M. Cardona, and S. Gopalan, Are Transverse Phonons Important for Γ - X-Intervalley Scattering? , Solid. State. Electron. 32 , 1585 (1989).                                                                                                                        |
| [38]   | P. Lautenschlager, M. Garriga, S. Logothetidis, and M. Cardona, Interband Critical Points of GaAs and Their Temperature Dependence , Phys. Rev. B 35 , 9174 (1987).                                                                                                                       |
| [39]   | B. A. Lippmann, Rearrangement Collisions , Phys. Rev. 102 , 264 (1956).                                                                                                                                                                                                                   |

| [40]   | S. Sunakawa, On the Theory of Rearrangement Collisions , Prog. Theor. Phys. 24 , 963 (1960).                                                                                                                                                                                   |
|--------|--------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------|
| [41]   | T. B. Day, L. S. Rodberg, G. A. Snow, and J. Sucher, Note on Rearrangement Collisions , Phys. Rev. 123 , 1051 (1961).                                                                                                                                                          |
| [42]   | C. J. N. Coveney, J. B. Haber, A. M. Alvertis, J. B. Neaton, and M. R. Filip, Rearrangement Collision Theory of Phonon-Driven Exciton Dissociation , arxiv:2405.13525 (2024).                                                                                                  |
| [43]   | M. S. Hybertsen and S. G. Louie, Electron Correlation in Semiconductors and Insulators: Band Gaps and Quasiparticle Energies , Phys. Rev. B 34 , 5390 (1986).                                                                                                                  |
| [44]   | J. Deslippe, G. Samsonidze, D. A. Strubbe, M. Jain, M. L. Cohen, and S. G. Louie, BerkeleyGW: A Massively Parallel Computer Package for the Calculation of the Quasiparticle and Optical Properties of Materials and Nanostructures , Comput. Phys. Commun. 183 , 1269 (2012). |
| [45]   | S. Baroni, S. de Gironcoli, A. Dal Corso, and P. Giannozzi, Phonons and Related Crystal Properties from Density-Functional Perturbation Theory , Rev. Mod. Phys. 73 , 515 (2001).                                                                                              |
| [46]   | F. Giustino, M. L. Cohen, and S. G. Louie, Electron-Phonon Interaction Using Wannier Functions , Phys. Rev. B - Condens. Matter Mater. Phys. 76 , 165108 (2007).                                                                                                               |
| [47]   | S. PoncŽ, E. R. Margine, C. Verdi, and F. Giustino, EPW: Electron - Phonon Coupling, Transport and Superconducting Properties Using Maximally Localized Wannier Functions , Comput. Phys. Commun. 209 , 116 (2016).                                                            |
| [48]   | Z. Li, G. Antonios, M. Wu, F. H. da Jornada, and S. G. Louie, Electron-Phonon Coupling from Ab Initio Linear-Response Theory within the GWMethod: Correlation-Enhanced Interactions and Superconductivity in Ba 1-x K x BiO 3 , Phys. Rev. Lett. 112 , 186402 (2019).          |
| [49]   | Z. Li, A. M. Alvertis, S. Gant, J. B. Neaton, and S. G. Louie, Wannier-function-assisted many-body GW-Bethe-Salpeter equation calculations: Gauge consistency involving phonons, nonuniform sampling, and ground-state starting point , to be submitted (2023).                |
| [50]   | A. M. Alvertis, J. B. Haber, Z. Li, C. J. N. Coveney, S. G. Louie, M. R. Filip, and J. B. Neaton, Phonon Screening and Dissociation of Excitons at Finite Temperatures from First Principles , Proc. Natl. Acad. Sci. 121 , e2403434121 (2024).                                |
| [51]   | S. Hameau, Y. Guldner, O. Verzelen, R. Ferreira, G. Bastard, J. Zeman, A. Lema'tre, and J. M. GŽrard, Strong Electron-Phonon Coupling Regime in Quantum Dots: Evidence for Everlasting Resonant Polarons , Phys. Rev. Lett. 83 , 4152 (1999).                                  |

| [52]   | N. E. Lee, J. J. Zhou, H. Y. Chen, and M. Bernardi, Ab Initio Electron-Two-Phonon Scattering in GaAs from next-to-Leading Order Perturbation Theory , Nat. Commun. 11 , 1607 (2020).                                                                                                         |
|--------|----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------|
| [53]   | G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki, Exciton Binding Energy in Quantum Wells , Phys. Rev. B 26 , 1974 (1982).                                                                                                                                                                |
| [54]   | H. Mathieu, P. Lefebvre, and P. Christol, Simple Analytical Method for Calculating Exciton Binding Energies in Semiconductor Quantum Wells , Phys. Rev. B 46 , 4092 (1992).                                                                                                                  |
| [55]   | W. Shan, B. D. Little, A. J. Fischer, J. J. Song, B. Goldenberg, W. G. Perry, M. D. Bremser, and R. F. Davis, Binding Energy for the Intrinsic Excitons in Wurtzite GaN , Phys. Rev. B 54 , 16369 (1996).                                                                                    |
| [56]   | J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, Absorption Coefficient, Energy Gap, Exciton Binding Energy, and Recombination Lifetime of GaN Obtained from Transmission Measurements , Appl. Phys. Lett. 71 , 2572 (1997). |
| [57]   | K. Reimann, M. Steube, D. Fršhlich, and S. J. Clarke, Exciton Binding Energies and Band Gaps in GaN Bulk Crystals , J. Cryst. Growth 189 - 190 , 652 (1998).                                                                                                                                 |
| [58]   | H. Fršhlich, Electrons in Lattice Fields , Adv. Phys. 3 , 325 (1954).                                                                                                                                                                                                                        |
| [59]   | C. Verdi and F. Giustino, Fršhlich Electron-Phonon Vertex from First Principles , Phys. Rev. Lett. 115 , 176401 (2015).                                                                                                                                                                      |
| [60]   | E. Kioupakis, P. Rinke, A. Schleife, F. Bechstedt, and C. G. Van De Walle, Free-Carrier Absorption in Nitrides from First Principles , Phys. Rev. B - Condens. Matter Mater. Phys. 81 , 241201(R) (2010).                                                                                    |
| [61]   | A. D. Wright, C. Verdi, R. L. Milot, G. E. Eperon, M. A. PŽrez-Osorio, H. J. Snaith, F. Giustino, M. B. Johnston, and L. M. Herz, Electron-Phonon Coupling in Hybrid Lead Halide Perovskites , Nat. Commun. 7 , 11755 (2016).                                                                |
| [62]   | T. Sohier, M. Gibertini, and M. J. Verstraete, Remote Free-Carrier Screening to Boost the Mobility of Fršhlich-Limited Two-Dimensional Semiconductors , Phys. Rev. Mater. 5 , 024004 (2021).                                                                                                 |
| [63]   | G. D. Mahan and J. J. Hopfield, Piezoelectric Polaron Effects in CdS , Phys. Rev. Lett. 12 , 241 (1964).                                                                                                                                                                                     |
| [64]   | V. A. Jhalani, J. J. Zhou, J. Park, C. E. Dreyer, and M. Bernardi, Piezoelectric Electron- Phonon Interaction from Ab Initio Dynamical Quadrupoles: Impact on Charge Transport in Wurtzite GaN , Phys. Rev. Lett. 125 , 136602 (2020).                                                       |

| [65]   | W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenberg, and S. L. Gilbert, Epitaxially Grown AlN and Its Optical Band Gap , J. Appl. Phys. 44 , 292 (1973).                                                                       |
|--------|--------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------|
| [66]   | N. Mori and T. Ando, Electron - Optical-Phonon Interaction in Single and Double Heterostructures , Phys. Rev. B 40 , 6175 (1989).                                                                                                                |
| [67]   | J. Gleize, M. A. Renucci, J. Frandon, and F. Demangeot, Anisotropy Effects on Polar Optical Phonons in Wurtzite GaN/AlN Superlattices , Phys. Rev. B 60 , 15985 (1999).                                                                          |
| [68]   | S. K. Medeiros, E. L. Albuquerque, G. A. Farias, M. S. Vasconcelos, and D. H. A. L. Anselmo, Confinement of Polar Optical Phonons in AlN/GaN Superlattices , Solid State Commun. 135 , 144 (2005).                                               |
| [69]   | N. Sawaki, On the Reduction of the Electron-LO Phonon Scattering in a Semiconductor Superlattice , J. Phys. C Solid State Phys. 19 , 4965 (1986).                                                                                                |
| [70]   | J. Z. Zhang, A. Dyson, and B. K. Ridley, Momentum Relaxation Due to Polar Optical Phonons in AlGaN/GaN Heterostructures , Phys. Rev. B - Condens. Matter Mater. Phys. 84 , 155310 (2011).                                                        |
| [71]   | W. H. Sio and F. Giustino, Unified Ab Initio Description of Fršhlich Electron-Phonon Interactions in Two-Dimensional and Three-Dimensional Materials , Phys. Rev. B 105 , 115414 (2022).                                                         |
| [72]   | P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer, and M. Scheffler, Consistent Set of Band Parameters for the Group-III Nitrides AlN, GaN, and InN , Phys. Rev. B - Condens. Matter Mater. Phys. 77 , 075202 (2008).             |
| [73]   | M. M. Ugeda et al., Giant Bandgap Renormalization and Excitonic Effects in a Monolayer Transition Metal Dichalcogenide Semiconductor , Nat. Mater. 13 , 1091 (2014).                                                                             |
| [74]   | Z. F. Liu, F. H. Da Jornada, S. G. Louie, and J. B. Neaton, Accelerating GW-Based Energy Level Alignment Calculations for Molecule-Metal Interfaces Using a Substrate Screening Approach , J. Chem. Theory Comput. 15 , 4218 (2019).             |
| [75]   | P. Wang et al., Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization , Adv. Mater. 2201387 (2022).                                                                                             |
| [76]   | D. Y. Qiu, F. H. Da Jornada, and S. G. Louie, Environmental Screening Effects in 2D Materials: Renormalization of the Bandgap, Electronic Structure, and Optical Spectra of Few-Layer Black Phosphorus , Nano Lett. 17 , 4706 (2017).            |
| [77]   | Z. Li, D. F. Cordovilla Leon, W. Lee, K. Datta, Z. Lyu, J. Hou, T. Taniguchi, K. Watanabe, E. Kioupakis, and P. B. Deotare, Dielectric Engineering for Manipulating Exciton Transport in Semiconductor Monolayers , Nano Lett. 21 , 8409 (2021). |

## Figures

FIG.  1. (a) Calculated quasiparticle band gap of atomically thin GaN QWs in AlN barriers as a function of the number of GaN layers. (b) Calculated exciton binding energy of atomically thin GaN QWs in AlN barriers as a function of GaN well thickness, both with and without the inclusion of phonon-screening effects at 300 K within our BSE formalism.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00924v1-figure-6afa14de-78d1-441a-9272-8a381dab0f59.jpg)

FIG.  2. (a) Relative reduction of  the exciton binding energy as a function of temperature for atomically  thin  GaN  QWs  due  to  phonon  screening.  (b-d)  The  contribution  to  the  reduction stemming  from  (a)  polar  LO  phonons  polarized  along  the  in-plane  direction,  (c)  in-plane  LA phonons and (d) other phonon modes, categorized as HS modes.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00924v1-figure-9ac10da8-8d0f-4caa-9667-2c76a7cd5f96.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00924v1-figure-dc4da95e-9fe3-4680-87cc-e195c1a09469.jpg)

0.15

0.1

1

0.05

2

04

.15

0.1

0.1

FIG.  3. (a) Eigenvector [uz] of the highest-energy HS mode. Blue, red, and gray circles represent the displacement amplitude of Al, Ga, and N atoms along the z-axis, respectively. (b, c) Electron and  hole  wavefunctions  averaged  over  the  in-plane  direction.  (d)  Magnitude  of  the  electronphonon matrix elements at the conduction band minimum for the highest-energy HS mode shown as a function of phonon momentum in the 2D Brillouin zone plane.

(eV)

0.8

0.6

0.4

0.2

## Phonon screening of excitons in atomically thin semiconductors

## Supplemental Material

Woncheol Lee, 1  Antonios M. Alvertis, 2,3,4 Zhenglu Li, 4,3,5 Steven G. Louie, 3,4 Marina R. Filip, 6 Jeffrey B. Neaton, 3,4,7 and Emmanouil Kioupakis 8

- 1 Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA

2 KBR, Inc. NASA Ames Research Center, Moffett Field, California 94035, United States 3 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

4 Department of Physics, University of California Berkeley, Berkeley, California 94720, USA 5 Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, USA

6 Department of Physics, University of Oxford, Oxford OX1 3PJ, United Kingdom 7 Kavli Energy NanoScience Institute at Berkeley, Berkeley, 94720 California, USA

8 Department of Materials Science and Engineering, University of Michigan, Ann Arbor,

Michigan 48109, USA

## 1. Computational method

We  performed  first-principles  calculations  using  density  functional  theory  (DFT)  and many-body perturbation theory (MBPT). We investigated a 20-atom wurtzite supercell structure consisting of atomically thin GaN quantum well with varying thickness (1 ML - 4 ML) embedded within AlN quantum barrier (FIG. S1). First, we performed structural relaxation calculation using local density approximation (LDA) for the exchange correlation functional [1-2], as implemented in Quantum ESPRESSO code [3]. Since the group-III nitrides require the 3𝑑 electrons for precise structural relaxations [4], we employed a norm-conserving pseudopotential of Ga, which include the 4𝑠 , 4𝑝 , and 3𝑑 electrons  of  Ga  in  the  valence. Additionally,  we  fixed  the  in-plane  lattice constant at the value of AlN (𝑎 = 0.3112Å) [5] and allowed atoms to move only along the polar c -axis of the supercell to mimic pseudo-morphic growth [6].

FIG.  S1. Schematics of atomically thin GaN quantum wells with different thicknesses, embedded within AlN quantum barriers: (a) 1 ML GaN with 9 ML AlN, (b) 2 ML GaN with 8 ML GaN, (c) 3 ML GaN with 7 ML AlN, (d) 4 ML GaN with 6 ML AlN. The region highlighted by the green boundary represents the actual supercell employed in the DFT calculations. The circles in blue, red, and grey represent aluminum (Al), gallium (Ga), and nitrogen (N) atoms, respectively.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00924v1-figure-2e3e7f44-c7bc-4ddf-bcbb-761872d5be36.jpg)

Next, we performed DFT calculations using Quantum Espresso [3]. We used a valence Ga pseudopotential  that  only  consider 4𝑠 and 4𝑝 electrons  to  reduce  the  computation  costs  of  the large-size  supercell  calculation. A  planewave  cutoff  of  70  Ry  with 8 × 8 × 1 Monkhorst-Pack mesh converged the total energy of the supercell within 1mRy/atom.

Based on the DFT calculation, we calculated quasi-particle energy using G0W0 method, as implemented in the BerkeleyGW [7]. We used a screening cutoff energy of 20 Ry and 8 × 8 × 1 Monkhorst-Pack mesh for the quasi-particle calculation. We chose plasmon-pole approximation to calculate the frequency-dependent dielectric response [8]. Also, we adopted the static-remainder approach to accelerate the convergence over the number of unoccupied electron states [9].

Finally, we used BerkeleyGW to solve Bethe-Salpeter Equation (BSE) [10]:

$$\Phi _ { \cdot \cdot \cdot \cdot } \left ( E _ { c \mathbf k + \mathbf Q } ^ { \mathbf Q P } - E _ { \nu \mathbf k } ^ { \mathbf Q P } \right ) A _ { \nu c \mathbf k } ^ { S } + \sum _ { \nu ^ { \prime } c ^ { \prime } \mathbf k ^ { \prime } } \langle \nu c \mathbf k | K ^ { \text{eh} } | \nu ^ { \prime } c ^ { \prime } \mathbf k ^ { \prime } \rangle A _ { \nu ^ { \prime } c ^ { \prime } \mathbf k ^ { \prime } } ^ { S } = \Omega ^ { S } A _ { \nu c \mathbf k } ^ { S } \right ) \right ) \right ) \right )$$

where 𝐤 is an  electron  momentum, 𝐐 is an  exciton  center-of-mass  momentum, c and v are conduction and valence band indexes, 𝐸 𝑛𝐤 QP is a quasi-particle energy, 𝐾 𝑣𝑐;𝑣 ′ 𝑐 ′ eh is an electron-hole interaction kernel, 𝐴𝑣𝑐𝐤 𝑆 is  an  exciton wavefunction (i.e., electron-hole amplitude), and Ω 𝑆 is  an exciton energy. In the calculations for 1 ML GaN and 2 ML GaN structures, we considered the lowest conduction band and the top three valence bands in the BSE calculation. In the case of 3 ML GaN and 4 ML GaN structures, we included the lowest conduction band and the top two valence bands. The same screening cutoff (20 Ry) was employed as in the quasiparticle calculation. For all cases, we use the patched sampling method [11] to interpolate the BSE kernel onto a Γcentered patch of the Brillouin zone, drawn from a fine 140 × 140 × 1 grid, converging the patch radius to ensure an accuracy of 10 meV or better for the exciton binding energy. After we obtain the  exciton  wavefunction (𝐴 𝑣𝑐𝐤 𝑆 ) from  BSE  calculations,  we  performed  density-functional perturbation theory (DFPT) calculations to obtain the electron-phonon matrix [3]:

$$g _ { i j, \nu } ( { \mathbf k }, { \mathbf q } ) = \langle \psi _ { i { \mathbf k } + { \mathbf q } } | \Delta _ { { \mathbf q } \nu } v ^ { K S } | \psi _ { j { \mathbf k } } \rangle,$$

where   and   are band indexes, i j 𝜈 is a phonon branch index, 𝐪 is a phonon momentum, 𝜓𝑖𝐤 is a Kohn-Sham wavefunction, and Δ𝐪𝜈 𝑣 KS is a phonon-induced variation of the Kohn-Sham potential. We employ Wannier-Fourier interpolation [12] to obtain the electron-phonon matrix on the same fine patch as for the exciton wavefunction. We use modified versions of the Wannier90 [13] and EPW [14] codes, in order to ensure the gauge consistency of the electron-phonon matrix computed from EPW and the exciton wavefunction obtained using BerkeleyGW. A detailed description of the computational workflow ensuring gauge consistency will be given elsewhere [15].

## 2. Absorption spectrum

Figure S2 shows the absorption spectra calculated for 1-4 MLs of GaN embedded within AlN barrier. Our calculation predicts a strong excitonic absorption peak appears in the deep UV range. We compare our calculated absorption spectra with experimentally measured photoluminescence spectra  studied  by  several  groups,  thereby  validating  the  reliability  of  our  GW  and  BSE calculations.

For  1  ML  (monolayer)  GaN,  which  has  been  extensively  studied  due  to  its  strong  quantum confinement effect and deep-UV emission, multiple papers report a PL emission peak around 5.25.3 eV. This is consistent with our calculation results. Our simulated structure, with its in-plane lattice constant fixed to that of AlN to replicate actual pseudomorphic growth, shows the lowest 1s exciton peak at 5.28 eV (Figure S2a).

For 2 ML (bilayer) GaN, Refs. [16] and [17] reported a peak at 4.84-4.86 eV, which is slightly higher than our lowest 1s exciton peak at 4.58 eV (Figure S2, 2 ML GaN). This discrepancy may be due to thickness fluctuations in actual experiments, as discussed in Refs. [17] and [18], which is further evidenced by the relatively broad PL emission peak.

We denote that the absorption spectra calculations do not include phonon screening effects, which could renormalize the exciton binding energy as we discussed in the manuscript and cause slight shifts in the overall spectra.

| References                                                        | Photoluminescence emission peak                           |
|-------------------------------------------------------------------|-----------------------------------------------------------|
| [16] Y. Taniyasu and M. Kasu Appl. Phys. Lett. 99 , 251112 (2011) | 0.9 MLGaN / 7.2 MLAlN: 5.23 eV 2 MLGaN / 8 MLAlN: 4.86 eV |
| [17] D. Bayerl et. al. Appl. Phys. Lett. 109 , 241102 (2016)      | 1 MLGaN / 7 MLAlN: 5.32 eV 2 MLGaN / 8 MLAlN: 4.84 eV     |
| [18] A. Aiello et. al. Nano Lett. 19 , 7852-7858 (2019)           | 1 MLGaN / 10 nmAlN 5.18 - 5.28 eV                         |
| [19] A. A. Toropov et. al. Nano Lett. 20 , 158-165 (2020)         | 1 - 2ML GaN: 5.17 - 5.39 eV                               |
| [20] Y. Wu et. al. Appl. Phys. Lett. 116 , 013101 (2020)          | 1 MLGaN / 2 - 20 AlN: 4.9 - 5.25 eV                       |

FIG.  S2. Optical absorption spectra of atomically thin GaN with varying thicknesses. The blue shaded area indicates the spectra obtained from BSE, while the grey line represents the spectra obtained from random phase approximation (RPA). Vertical dashed lines indicate the energy of the lowest 1s exciton state (𝐸 1𝑠 ) from BSE calculations and the quasi-particle gap (𝐸 𝑔 ) obtained from G0W0 calculations.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00924v1-figure-39d8d631-d21d-4b10-a7df-ea5ede2f6fac.jpg)

## 3. Exciton binding energy obtained from the inclusion of phonon screening

FIG.  S3. Exciton binding energy calculated by the inclusion of the phonon screening effect (solid lines with symbols). Horizontal dashed lines indicate the exciton binding energy of four different GaN  quantum  wells,  as  determined  from  standard  BSE  calculation  (without  the  inclusion  of phonon screening).

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00924v1-figure-b34b1044-b0c6-426b-bd81-881af176296e.jpg)

## 4. Electron-phonon matrix

## (a) LO phonon (Fröhlich interaction)

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00924v1-figure-5ffefffd-de5b-47c1-a4dc-27446241b9cc.jpg)

## (b) LA phonon (Piezoelectric interaction)

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00924v1-figure-ea08cbd9-a896-4bba-b5ef-279eaf4486ac.jpg)

## (c) HS phonons

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00924v1-figure-8f4cf0f0-b38b-4803-a508-8943d1ccf8f9.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00924v1-figure-22869566-98d2-4c31-a446-2657aac7a07c.jpg)

FIG.  S4. Electron-phonon matrix 𝑔𝑐𝑐 ′ ,𝜈 (𝒌 = 𝛤, 𝒒) and hole-phonon matrix 𝑔𝑣𝑣 ′ ,𝜈 (𝒌 = 𝛤, 𝒒) for different  vibrational  modes.  The  discontinuity  observed  in  the  case  of  2  ML  arises  from  the crossing between LO and HS modes in the phonon dispersion.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00924v1-figure-5b63fa15-c51a-4b6b-b9d4-a4de8492271b.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00924v1-figure-f863ae60-f07a-4972-8fd7-5bb482cf2383.jpg)

## 5. Phonon eigenvector

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00924v1-figure-33c405fb-3337-4a07-8ca7-af6a995fc970.jpg)

FIG.    S5.  Phonon  eigenvectors  shown  for  the  LO phonon  modes  vibrating  along  the  in-plane direction and the HS modes vibrating along the z-axis. For brevity, we are presenting only the four highest-energy phonon modes at 𝒒 = 0 .

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00924v1-figure-6f46265a-10e3-45b5-b413-a193d7c216b8.jpg)

## 6. Phonon dispersion

FIG.  S6. Phonon dispersion of four different supercells, each with varying GaN quantum well thickness. The blue curve illustrates the Fröhlich-type LO phonon mode in the in-plane direction, the red curves indicate three HS phonon modes shown in Fig. S3, and the green curve represents the piezoelectric LA phonon mode.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00924v1-figure-0651c93a-c66a-49c6-b3cd-8b5faf8bcd92.jpg)

## 7. Electron and hole wavefunctions

FIG.  S7. Electron wavefunction (blue) and hole wavefunction (red) for 1-4 ML GaN quantum wells

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00924v1-figure-e43a3b6b-5469-45de-a841-d2fcb7ac9e67.jpg)

## 8. Exciton wavefunction 𝑨𝒗𝒄𝐤 in reciprocal space

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00924v1-figure-45f019b2-3e13-4bac-a089-4f049083ec73.jpg)

## References

| [1]   | D. M. Ceperley and B. J. Alder, 'Ground State of the Electron Gas by a Stochastic Method,' Phys. Rev. Lett. , vol. 45, no. 7, pp. 566 - 569, Aug. 1980.                                                                                                                                                |
|-------|--------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------|
| [2]   | J. P. Perdew and A. Zunger, 'Self -interaction correction to density-functional approximations for many- electron systems,' Phys. Rev. B , vol. 23, no. 10, pp. 5048 - 5079, May 1981.                                                                                                                 |
| [3]   | P. Giannozzi et al. , 'Advanced capabilities for materials modelling with Quantum ESPRESSO,' J. Phys. Condens. Matter , vol. 29, no. 46, p. 465901, Nov. 2017.                                                                                                                                         |
| [4]   | C. Stampfl and C. G. Van de Walle, 'Density -functional calculations for III-V nitrides using the local- density approximation and the generalized gradient approximation,' Phys. Rev. B , vol. 59, no. 8, pp. 5521 - 5535, Feb. 1999.                                                                 |
| [5]   | W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenberg, and S. L. Gilbert, 'Epitaxially grown AlN and its optical band gap,' J. Appl. Phys. , vol. 44, no. 1, pp. 292 - 296, 1973.                                                                                                      |
| [6]   | A. Aiello et al. , 'Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures,' Nano Lett. , vol. 19, no. 11, pp. 7852 - 7858, 2019.                                                                                                      |
| [7]   | J. Deslippe, G. Samsonidze, D. A. Strubbe, M. Jain, M. L. Cohen, and S. G. Louie, 'BerkeleyGW: A massively parallel computer package for the calculation of the quasiparticle and optical properties of materials and nanostructures,' Comput. Phys. Commun. , vol. 183, no. 6, pp. 1269 - 1289, 2012. |
| [8]   | M. S. Hybertsen and S. G. Louie, 'Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energies,' Phys. Rev. B , vol. 34, no. 8, pp. 5390 - 5413, Oct. 1986.                                                                                                             |
| [9]   | J. Deslippe, G. Samsonidze, M. Jain, M. L. Cohen, and S. G. Louie, 'Coulomb -hole summations and energies for GW calculations with limited number of empty orbitals: A modified static remainder approach,' Phys. Rev. B , vol. 87, no. 16, p. 165124, Apr. 2013.                                      |
| [10]  | M. Rohlfing and S. G. Louie, 'Electron -hole excitations and optical spectra from first principles,' Phys. Rev. B , vol. 62, no. 8, pp. 4927 - 4944, Aug. 2000.                                                                                                                                        |
| [11]  | D. Y. Qiu, F. H. da Jornada, and S. G. Louie, Screening and Many-Body Effects in Two- Dimensional Crystals: Monolayer MoS 2 , Phys. Rev. B 93 , 235435 (2016).                                                                                                                                         |
| [12]  | F. Giustino, M. L. Cohen, and S. G. Louie, Electron-Phonon Interaction Using Wannier Functions , Phys. Rev. B 76 , 165108 (2007).                                                                                                                                                                      |

| [13]   | G. Pizzi et al., Wannier90 as a Community Code: New Features and Applications , J. Phys. Condens. Matter 32 , 165902 (2020).                                                                                                                                                                                                                    |
|--------|-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------|
| [14]   | S. PoncŽ, E. R. Margine, C. Verdi, and F. Giustino, EPW: Electron - Phonon Coupling, Transport and Superconducting Properties Using Maximally Localized Wannier Functions , Comput. Phys. Commun. 209 , 116 (2016).                                                                                                                             |
| [15]   | Z. Li, A. M. Alvertis, S. Gant, J. B. Neaton, and S. G. Louie, Wannier-function-assisted many-body GW-Bethe-Salpeter equation calculations: Gauge consistency involving phonons, nonuniform sampling, and ground-state starting point , to be submitted (2023).Z. Li, A. M. Alvertis, S. E. Gant, J. B. Neaton, and S. G. Louie, In preparation |
| [16]   | Y. Taniyasu and M. Kasu, Polarization Property of Deep-Ultraviolet Light Emission from C-Plane AlN/GaN Short-Period Superlattices , Appl. Phys. Lett. 99 , 251112 (2011).                                                                                                                                                                       |
| [17]   | D. Bayerl, S. Islam, C. M. Jones, V. Protasenko, D. Jena, and E. Kioupakis, Deep Ultraviolet Emission from Ultra-Thin GaN/AlN Heterostructures , Appl. Phys. Lett. 109 , 241102 (2016).                                                                                                                                                         |
| [18]   | A. Aiello et al., Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures , Nano Lett. 19 , 7852 (2019).                                                                                                                                                                         |
| [19]   | A. A. Toropov et al., Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet , Nano Lett. 20 , 158 (2020).                                                                                                                                                       |
| [20]   | Y. Wu, X. Liu, P. Wang, D. A. Laleyan, K. Sun, Y. Sun, C. Ahn, M. Kira, E. Kioupakis, and Z. Mi, Monolayer GaN Excitonic Deep Ultraviolet Light Emitting Diodes , Appl. Phys. Lett. 116 , 013101 (2020).                                                                                                                                        |
Woncheol Lee Antonios M. Alvertis Zhenglu Li Steven G. Louie Marina R. Filip Jeffrey B. Neaton Emmanouil Kioupakis
Phonon screening of excitons in atomically thin semiconductors
Atomically thin semiconductors, encompassing both 2D materials and quantum
wells, exhibit a pronounced enhancement of excitonic effects due to geometric
confinement. Consequently, these materials have become foundational platforms
for the exploration and utilization of excitons. Recent ab initio studies have
demonstrated that phonons can substantially screen electron-hole interactions
in bulk semiconductors and strongly modify the properties of excitons. While
excitonic properties of atomically thin semiconductors have been the subject of
extensive theoretical investigations, the role of phonon screening on excitons
in atomically thin structures remains unexplored. In this work, we demonstrate
via ab initio GW-Bethe-Salpeter equation calculations that phonon screening can
have a significant impact on optical excitations in atomically thin
semiconductors. We further show that the degree of phonon screening can be
tuned by structural engineering. We focus on atomically thin GaN quantum wells
embedded in AlN and identify specific phonons in the surrounding material, AlN,
that dramatically alter the lowest-lying exciton in monolayer GaN via
screening. Our studies provide new intuition beyond standard models into the
interplay among structural properties, phonon characteristics, and exciton
properties in atomically thin semiconductors, and have implications for future
experiments.