## Non thermal isostructural electrically driven insulator-metal  transition  and  electro-strain  in layered cobaltate

Abdul Ahad 1 , R. Rawat 2 , F. Rahman 1 , D. K. Shukla 2,*

1 Department of Physics, Aligarh Muslim University, Aligarh 202002, India 2 UGC-DAE Consortium for Scientific Research, Indore 452001, India

*Correspondence to: dkshukla@csr.res.in

## Abstract:

We  report  here  a  discovery  of  electrically  driven  insulator  to  metal  transition  (IMT)  and concomitant isostructural  volume expansion in the layered cobaltates which otherwise do not exhibit temperature dependent  IMT. These  findings are demonstrated at macroscopic, microscopic and atomic scales. With application of voltage growth of metallic regions have been observed in the 2D layered La2-xSrxCoO4. Growth of metallic regions is associated with volume increase (strain as high as 0.3%). Non thermal IMT and electro-strain are proposed to be caused by electro-proliferation of the Co 3+ high spin states.

## Introduction:

Materials (VO2 &amp; NbO2) which exhibit electrically driven insulator to metal transition (IMT) have attracted huge interests, as these offer potential applications such as, memristors 1,2 , sensors 3 , neuromorphic  computing 4   and  transistor  switches 5 .  In  these  materials  electric  field  induced resistive state change happens due to existing temperature dependent IMT, through the Joule heating 6,7 . Moreover, IMT in these materials is accompanied by structural transitions. To find a material which can exhibit isostructural non thermal IMT is a challenge and desirable for fast application purposes 6 .

Compounds containing Co 3+  ions usually show complex electrical and magnetic behavior and unpredictable  phase  diagram  because  of  intriguing  spin-state  transitions.  The  Co  ions  in  +3 valence state can exhibit three different spin-states i.e. low spin state (LSS) ( 𝑡 2𝑔 𝑒 6 𝑔 0 ), intermediate spin state (ISS) ( 𝑡 2𝑔 𝑒 5 𝑔 1 ) and high spin state (HSS) ( 𝑡 2𝑔 𝑒 4 𝑔 2 ). Each of this spin-states has different ionic radii and electronic structure. These three spin states are almost degenerate and easily can be changed into other by small external perturbations i.e. temperature, pressure and magnetic field 8,9 . As a result of spin state transition, lattice compresses/expands and physical properties changes like conductivity etc. One of the perturbations that can also change the spin-states is the electric field. However, there is rarely any report on electric field tuning of these.

Layered cobaltates La2-xSrxCoO4 are insulators and exhibit mix of the LSS and HSS of the Co 3+ ions  at  room  temperature 10 .  These  do  not  exhibit  temperature  dependent  insulator  to  metal transition. We present here observations on electrically driven IMT based on proliferation of the Co 3+ HSS in these compounds. Along with IMT due to electro-proliferation of the HSS concomitant electro-strain is also observed. Combination of both these electrically driven non-thermal phase transitions can be extremely useful for future multisensory and memristor applications.

## Results:

Electrically driven  resistive switching  and  simultaneous  observation  of  strain  in  the  x=0 composition of the La2-xSrxCoO4 (Fig. 1 (a) and Fig. 2 (a &amp; b)) is surprising and very interesting. Simultaneous  resistance  and  strain  switching  observation  motivates  to  compare  results  with composition having different amount of the Co 3+  fraction. Other than x = 0 (100% Co 3+ ) we choose x  =  0.5  (50  %  Co 3+ and  50  %  Co 2+ (Co 2+ always  remain  in  the  HSS))  composition. We  have performed strategic set of measurements on both these samples. Hereafter, these samples will be termed as S1 (x = 0) and S2 (x = 0.5).

Resistivity of the sample S1 is much lower than the sample S2 and both samples show insulating character. With increasing temperature  resistance of both the samples  decreases.  For temperature dependent measurements we have chosen separate range of temperatures where resistances are similar for both the samples. Resistance vs temperature (RT) of both samples with different applied voltages are shown in the Fig. 1 (a &amp; c). Both samples show voltage induced resistance switching. Due to current compliance limit (10 mA) of measuring device, at switching all the curves show constant value of resistance and temperature coefficient of resistance (TCR) of switched state remains unknown. To figure out the TCR we have employed another device with high  current  measurement  ability.  A  clear  metallic  nature  (+ve  TCR)  after  the  switching  is observed (see Fig. 1 (b)). This confirms voltage induced IMT in the sample. This measurement has been done in heating cycle because of high current flowing in metallic phase prevents cooling.

It is well proven that strain gauge is very sensitive to small changes in the adjacent systems 11 . Fig. 2 (a) and 2 (b) show IV and strain measurements for the sample S1 in the temperature range 190 K to 300 K and Fig. 2 (c) and 2 (d) comprises same measurements for the sample S2 in the temperature range 320 K to 400 K. A remarkable novel association between lattice expansion and IV is  observed.  Interestingly,  to  one's  imagination  RT  curves  shows  breakdown  with  the different applied voltages but IV clearly shows that the phase transition is reversible and behavior is like a threshold type resistive switching 12 and clearly not a breakdown 13-15  as observed in Mott insulators and charge ordered systems.

Behind the observed electrically driven IMT and electro-strain there could be two reasons, first there is a tunneling between the Co 3+  HSS, and second proliferation of Co 3+ HSS. Confirmation to either of these is not possible without microscopy (conducting microscopy) at submicron length scale. Therefore, we have performed conducting tip force microscopy (CTFM) measurement on the sample S2 to know the mechanism at micro scale. In this microscopy voltage bias is applied between the tip and sample. Changes in local resistance is measured with the applied bias. CTF microscopy can provide ~ 10 nm spatial resolution 16 . We have first recorded topography of the sample at 4 V and selected 4 x 2 μm 2  area to scan the current flowing via tip for different bias voltages. Fig. 3 clearly show growth of the conducting regions with increasing applied bias. This microscopic evidence supports our macroscopic measurements.

To  further  check  the  atomic  scale  involvement  in  volume  change  at  unit  cell  level  we  have performed X-ray diffraction (XRD) with applied voltages. Fig. 4 shows the XRD measurements in the Bragg-Brentano geometry on the sample S2, for higher 2θ range as it offers sensitivity to changes  at  smaller  inter-planar  spacings.  Interestingly,  we  observe  successive  shifting  of diffraction peaks towards lower 2θ with the applied voltage indicating the unit cell expansion. This further supports to our finding at atomic scale. We do not find any evidence of structural change as is generally observed in the transition metal dichalcogenides 17 .

## Discussion:

Coming back to the strain value which is associated with metallic region growth and switching is the novel observation. These spectacular changes can be mapped with normal strain gauge (as the changes are sufficiently large). To track the path of phase formation we have employed the three geometries of voltage biasing and simultaneous measurement of current and strain, parallel, perpendicular and sidewise. In parallel geometry strain gauge is mounted back to sample along the area and voltage is applied on the opposite face. In perpendicular geometry strain gauge is mounted on one face and voltage is applied across the thickness. In sidewise geometry, voltage is applied on the same face (on the side) at which strain gauge mounted. We have presented these  measurements  for  the  S2  (see  Fig.  S1).  The  noteworthy  observation  is  that  the  no spectacular change in the strain of the sample is observed in the sidewise case (see Fig. S2). Moreover, the maximum changes occur in the parallel case. This observation clearly indicates the growth of metallic regions depends on the electric field gradient.

In the last decades, several reports 2,6,7,13-15 have shown IMT type switching but the origin of those are not very clear. However, the controversies regarding such phases have evidences of joule heating i.e. the phase conversion is actually filamentary type and a consequence of the Joule heating 18 . Recently, in the layered Ca2RuO4, it has been observed that the electrically induced metallic phase is not a result of Joule heating and the structure is involved in this case but the details are not known 7 . In the present case, we can discard the involvement of the Joule heating based on the arguments that voltage induced IMT and volume expansion directly depends on the geometry (as explained above).

In the following we discuss a new viewpoint that the host to the strain in these samples is the Co 3+ HSS. The ionic radii of Co 3+  HSS is the 0.61 Å and for the LSS it is 0.545 Å 19 . Considering the unit cell comprised of 100 % HSS or 100 % LSS then there should be volume difference of ~ 6 %. S1 has 100 % Co 3+  and S2 has 50 % Co 3+ , therefore, if the applied voltage in these compounds changes the spin states of the Co 3+  to complete HSS then the strain should be ~ 50 % larger in S1. To confirm that the IMT and electro-strain is due to the HSS transition we have compared the values of strain in the S1 and S2 at temperatures (190 K for S1 and 330 K for S2) where they have similar resistance. Strain values of S1 (at 190 K) is ~ 40% larger than S2 (at 330 K), a difference as predicted is observed.  A self-explanatory schematic to this process is shown in the Fig. 5.

## Conclusions:

In  conclusion, we have provided the first experimental evidence of electric field induced IMT, strain and spin state transition in the 2D layered La2-xSrxCoO4 (x= 0, 0.5). Volume expansion and simultaneous growth of metallic regions is due to the electric field induced spin-state transition. Electric field driven growth of metallic region at submicron scale is confirmed by microscopy (CTF) and  expansion  of  lattice  by  macroscopic  (strain  gauge)  and  atomic  scale  (X-ray  diffraction) measurements. Unprecedented phenomenon observed in the present study could be useful for future advance devices.

## Acknowledgments:

Authors are grateful to Ajit  Sinha (Director,  UGC-DAE CSR) for encouragement and support. Authors are thankful to D. M. Phase and G. Panchal for help during XRD measurements. AA acknowledges UGC, New Delhi, India for financial support in the form of MANF scheme. DKS acknowledges financial support from Department of Science and Technology (DST), New Delhi, India.

## Author contribution:

DKS conceived the idea of the project and devised the experiments. AA made the samples with the help from FR. AA and DKS developed the required software performed the experiments, and analyzed the data. RR performed the microscopy experiment and participated in data analysis. DKS wrote the paper with the feedback from all the authors.

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Fig.1. (a) Temperature vs resistance (RT) measurement of the sample S1 under different electric fields.  (b)  RT  of  the  sample  S1  under  46.6  V/mm  electric  field  at  outer  leads,  and  current measurements through inner leads using high compliance limit instrument (see text for details). During current measurement through inner leads a small electric field of 0.6 V/mm is applied. (c) RT of the sample S2 under 15 V/mm electric field. Measurement configurations are schematically shown in the insets of respective figures.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01125v1-figure-d6bc484b-96c7-47df-9869-1f6cda235360.jpg)

Fig. 2. (a) Current vs voltage (IV) measurements of the sample S1 at different temperatures (190 K-300  K)  and  (b)  strain  measurements.  (c)  IV  measurements  of  the  sample  S2  at  different temperatures (320 K-400 K), and (d) strain measurement. For both the samples (S1 and S2) IV and strain measurements were performed simultaneously, IV using two-probe and resistance of strain gauge using four-probe, as shown in the schematic in the inset of the figure (a).

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01125v1-figure-6db303be-8dde-4928-88f5-0acf0f997f23.jpg)

Fig. 3. (a-g) Current scanning images of the sample S2 under labelled biasing voltage. Each figure is  direct  evidence to the proliferation of metallic regions. (h) Topography of the  sample S2 (i) Schematic of the CTFM measurement configuration.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01125v1-figure-7b4e7bcc-297d-4c47-b363-9dfda6f4d9a2.jpg)

60.0

Fig. 4. (a) XRD of the sample S2 with and without electric field. Inset shows the experimental configuration of XRD under electric field, and (b &amp; c) show the zoomed views of the selected diffraction peaks.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01125v1-figure-408be6f5-f3f8-4a43-b2fa-d5d08f1cec6c.jpg)

Fig. 5. Schematic of the electro-proliferation of the Co 3+ HSS with the application of applied electric field and simultaneous strain generation/IV behavior.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01125v1-figure-25755df9-666f-4bf6-a46f-69769bc3a8c6.jpg)

## Supplementary information

Non thermal isostructural electrically driven insulator-metal  transition  and  electro-strain  in layered cobaltate

Abdul Ahad 1 , R. Rawat 2 , F. Rahman 1 , D. K. Shukla 2,*

1 Department of Physics, Aligarh Muslim University, Aligarh 202002, India 2 UGC-DAE Consortium for Scientific Research, Indore 452001, India

*Correspondence to: dkshukla@csr.res.in

## Materials and Methods:

Polycrystalline samples of La2-xSrxCoO4 (x = 0.0 and 0.5) were synthesized using standard solidstate synthesis method and are well characterized  10,20 . For current-voltage characteristic (IV) two probe as well as four probe method has been employed. Keithley 2182A nanovoltmeter, Keithley 2401 sourcemeter and Keithley 6517B electrometer were used for the electrical measurements in different configurations. Silver point contacts have been made  for each electrical measurements. Applied voltage (Volts) has been converted into electric field (V/mm), normalizing by the distance of the contacts. To perform the strain measurements, strain gauge (Tokyo Sokki Kenkyujo  Co.  Ltd.)  was  glued  on  sample  surface  by  GE  varnish.  Simultaneous  resistance measurements  were  performed  for  sample  (two  probe  using  electrometer)  and  strain  gauge resistance (four probe). Room temperature conducting tip force microscopy (CTFM) was done on attocube made commercial system. During CTFM the biasing up to 10 V has been used by inbuilt voltage source of setup and for higher bias voltages Keithley 6517B was used. Room temperature X-ray  diffraction  patterns  have  been  recorded  on  a  Bruker  diffractometer  in  Bragg-Brentano geometry with a custom made sample holder for XRD voltage biasing.

Fig.  S1. (a) IV  characteristic for  the  sample  S2 measured at 330 K and (b) associated strain measurement. In the parellel geometry (1) lesser electric field is required for IMT switching and larger strain is observed (grey curves), while in the perpendicular geometry (2) larger electric field is  required  for  IMT  switching  and  lesser  strain  is  observed  (black  curves).  This  experiment confirms that the expansion is caused due to the electric field gradient. The geometry (1) is much sensitive for changes because the gradient is applied on the whole sample piece and strain is measured across the gradient.  The geometry (1) is commonly used throughout this study.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01125v1-figure-10a20ddb-3dca-4785-9b16-d2664a914cab.jpg)

Fig.  S2  (a)  IV  characteristic  for  the  sample  S2  measured  at  350  K  and  (b)  associated  strain measurement. In this measurement configuration (side wise geometry, shown in inset of (a)) no appreciable change is observed with applied electric field.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01125v1-figure-6bbd07f3-abf3-4d56-90b4-aa9b46d3ed70.jpg)
Abdul Ahad R. Rawat F. Rahman D. K. Shukla
Non thermal isostructural electrically driven insulator-metal transition and electro-strain in layered cobaltate
We report here a discovery of electrically driven insulator to metal
transition (IMT) and concomitant isostructural volume expansion in the layered
cobaltates which otherwise do not exhibit temperature dependent IMT. These
findings are demonstrated at macroscopic, microscopic and atomic scales. With
application of voltage growth of metallic regions have been observed in the 2D
layered La2-xSrxCoO4. Growth of metallic regions is associated with volume
increase (strain as high as 0.3%). Non thermal IMT and electro-strain are
proposed to be caused by electro-proliferation of the Co3+ high spin states.