## Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN

Joseph Casamento 1 , John Wright , Reet Chaudhuri , Huili Grace Xing 1 2 1,2 , and Debdeep Jena 1,2 1 Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA 2 School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

RF plasma assisted MBE growth of Scandium Nitride (ScN) thin films on GaN (0001)/SiC, AlN (0001)/Al2O3 and on 6H-SiC (0001) hexagonal substrates is found to lead to a face centered cubic (rock-salt) crystal structure with (111) out-of-plane orientation instead of hexagonal orientation. For the first time, cubic (111) twinned patterns in ScN are observed by in-situ electron diffraction during epitaxy, and the twin domains in ScN are detected by electron backscattered diffraction, and further corroborated with X-ray diffraction. The epitaxial ScN films display very smooth, sub nanometer surface roughness at a growth temperature of 750C. Temperature-dependent Hall-effect measurements indicate a constant high n-type carrier concentration of ~1x10 20 /cm 3 and electron mobilities of ~ 20 cm /Vs. 2

The III-Nitride semiconductors GaN, InN, and AlN and their heterostructures have triggered a rapid expansion of photonic and electronic device applications into new wavelength, voltage, and frequency regimes. Bringing new and unique physical properties into this semiconductor family by new, epitaxially compatible nitride materials holds the promise to significantly expand what is possible today. [1]

The transition metal Sc is stable in a hexagonal crystal structure in its elemental form. The Sc ion, as a group III element, has a stable oxidation state of +3. This allows the formation of rock-salt ScN with N in the -3 oxidation state, and isovalent alloying when replacing the group III elements In, Ga, Al, or B for the III-nitride materials family. This feature, combined with predictions of a metastable nonpolar h-BN-like, and wurtzite crystal structures [2,3] , has led to significant interest in  ScN  and  its  alloys.  These  alloys  promise  to  bring  to  the  established  GaN  and  AlN  based electronics  and  photonics  family,  missing  properties  such  as  plasmonic [4] ,  thermoelectric [5,6] , extremely high piezoelectric [7,8] , and also ferroelectric behavior in ScAlN [9-11] .

As Sc-based alloys with AlN and GaN (such as ferroelectric ScAlN) are beginning to be explored by epitaxy [12,13] , it is essential that the epitaxial growth of the limiting binary ScN thin films, and their physical properties be understood. The binary compound Scandium Nitride (ScN) is part of the family of the transition metal nitride semiconductors, with desirable physical properties such as high hardness, mechanical strength, and high temperature stability [14-17] . Its equilibrium phase has a face-centered cubic rocksalt (NaCl) structure with a lattice constant of 4.505 angstroms [18] . The (111) lattice constant of cubic ScN is nearly lattice-matched (only ~0.1% difference) to the cplane  lattice  constant  of  wurtzite  GaN [19] .  This  has  led  to  avenues  for  the  use  of  ScN  as  a dislocation reduction buffer layer, and for in-situ ohmic contacts for GaN based devices [20] . Earlier studies  have  reported  the  growth  of  binary  ScN  thin  films  by  reactive  magnetron  sputtering, hydride  vapor  phase  epitaxy,  and  gas-source  and  plasma  MBE  on  Si,  Al2O3,  SiC,  and  MgO surfaces [21-29] . Very few reports exist of ScN epitaxy on GaN [30] , and no results have yet been shown for growth on AlN. One literature report mentions mixed (110) and (111) orientations for ScN grown on AlN, but the data is not presented [31] . Here, we present a comparative study of the plasma-MBE growth, structure, surface morphology, and electrical transport properties of ScN thin films (~ 30 nm) on c-plane GaN, AlN, and SiC surfaces. We find that extremely smooth epitaxial thin films of high crystalline quality of rocksalt ScN grow with their 111 axes aligned with the polar 0001 c-axis of the wurtzite substrates of GaN, AlN, and SiC, and are unintentionally n-type doped with degenerate electron concentrations.

ScN films were deposited on various substrates using a Veeco ®  GenXplor MBE system in which the idle-state base pressure is 5x10 -10 torr. Solid Sc source of 99.99 % purity on a rare earth element basis  from  American  Elements  was  evaporated  using  a  Telemark ®   electron  beam  evaporation system in the MBE environment. An electron beam is steered into a W crucible with a magnetic coil to create the Sc flux. Flux stability was achieved with an Inficon ®  electron impact emission spectroscopy  (EIES)  system  by  directly  measuring  the  Sc  atomic  optical  emission  spectra. Nitrogen was supplied using a  Veeco ®   RF  UNI-Bulb  plasma  source,  with  growth  pressure  of approximately  10 -5 torr. In-situ  monitoring  of  film  growth  was  performed  using  a  KSA

Instruments reflection high-energy electron diffraction (RHEED) apparatus with a Staib electron gun operating at 15 kV and 1.5 A. After epitaxial growth, the film thickness and orientation were characterized using a PanAlytical X'Pert Pro XRD setup at 45 kV, 40 mA with Cu Kα radiation (1.5406 Å). Grain topography and orientation was investigated using an Electron Back-Scatter Diffraction (EBSD) detector with a 70-degree geometric tilt correction in a Tescan Mira SEM system with an operating pressure of 10 -5 torr.  Kikuchi patterns were indexed to face centered cubic ScN (Fm-3m space group, 225). Temperature-dependent Hall-effect measurements were taken using indium contacts in a Van der Pauw geometry in a Lakeshore ®  system with a 1T magnet from room temperature to 20K.

ScN films were grown in nitrogen-rich conditions at a thermocouple temperature of 750C, a Sc flux of 0.16 Å/s, a Nitrogen plasma condition of 1.95 standard cubic centimeter per minute (sccm) and 200W, and a chamber pressure of 1.5x10 -5 torr. Nitrogen rich growth conditions were utilized to suppress nitrogen vacancy formation and maintain a 1:1 Sc to N stoichiometry in the epitaxial film [32] . ScN layer thicknesses were 30 nm with a growth rate of 30 nm/hour.

During growth, RHEED was utilized to continuously monitor the surface crystal structure of ScN. During growth on hexagonal substrates, the (110) azimuth evolved from first order 1x1 streaks for GaN to pairs of symmetric spots on either side of the original first order streaks for ScN. These spots can be viewed as rotated variants of two separate overlaid (1-10) zone axes, indexed as pairs of (111) and (002) families of planes, as shown in Figure 1. This RHEED pattern and indexing has not  been  reported  before  for  ScN  (111)  films  but  was  seen  in  Cu  (111)  thin  films  grown  on Al2O3 [33] .

Figure 1: RHEED pattern during evolution along the [110] azimuth from GaN (0001) to ScN (111). 111 and 002 pairs of kinematically allowed diffraction spots are symmetrically rotated about the zone center, illustrating ScN grows as a cubic-twinned crystal.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01045v1-figure-887f98ab-b616-479c-85f8-3da5c85bc0ed.jpg)

The observed RHEED pattern implies the existence of twin domains that are expected to result from the symmetry constraints encountered upon growing a three-fold symmetric cubic crystal on a six-fold symmetric hexagonal substrate. The (110) zone axis for a cubic single crystal would only have two 111 and two 002 diffraction spots, one each on each side of the zone center (000). Here,  four  111  and  four  002  diffraction  spots  are  seen,  two  on  each  side  of  the  zone  center, indicating a (111) cubic twinned crystal.

To further test for the existence of twin domains in the epitaxial ScN layers, electron back-scatter diffraction (EBSD) measurements were performed on ScN films grown on 6H SiC and GaN/SiC template substrate (Figure 2). In EBSD, the incident beam-sample-detector geometry is such that backscattered electrons escape the sample through the Bragg angle and diffract and form Kikuchi bands.  If  the  chemical  composition  is  known,  the  orientation  sensitive  Kikuchi  bands  can  be indexed to determine the crystal orientation in different regions. Accordingly, Kikuchi patterns were indexed to face centered cubic (FCC) ScN to verify the symmetry of the ScN film. EBSD topography images showed striped patterns with alternating orientations.  Two  different  colors indicate two different orientations, as expected for domains on either side of a twin boundary. Pole figures with the (111) direction out of plane indicated six-fold symmetry, as shown in Figure 2 for samples grown on 6H-SiC and GaN/SiC. The corresponding AFM images indicate highly smooth surface morphologies, with rms roughness below 1 nm for 10x10 micron scans for ScN layers that are 30 nm thick. Grain misorientation statistics (not shown) indicated the ScN epitaxial film was entirely (111) oriented, with 60 degrees being the dominant in-plane misorientation angle.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01045v1-figure-b3cc72f9-179a-47bc-9e6b-53280b80d975.jpg)

B.)

Figure 2 A.) EBSD topography image of ScN grown on 6H-SiC (left). EBSD pole figure of ScN with {111} direction out of plane (center). 10x10μm AFM image(right). B.) EBSD topography of ScN grown on GaN/SiC (left). EBSD pole figure of ScN with {111} direction out of plane (center). 2x2μm AFM image (right). Alternating stripe patterns in  the  EBSD topography images indicate domains with 180˚ orientation device, with  six spots in the EBSD pole figures indicating six-fold symmetry in the {111} direction.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01045v1-figure-acd783d1-2451-4de3-8f14-ab8dbd0ee5ee.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01045v1-figure-d2dab843-d52e-4f81-a68c-c4f82f695bed.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01045v1-figure-f79d2484-f572-4c24-a182-372b30317c4b.jpg)

Hence, we find that the ScN samples are not polycrystalline with random grain orientations, but rather  highly  oriented  crystals  with  grain  misorientation.  EBSD  determined  twin  domain  sizes differed  from  approximately  800  nm  for  samples  grown  on  SiC  and  60  nm  when  grown  on GaN/SiC. It is currently unclear if step-terraces or other surface features from the substrate such as threading dislocations influence the nucleation of cubic-twin domains and subsequent size of these domains. Growth on bulk substrates combined with transmission electron microscopy (TEM) studies can answer this question definitively in the future.

The orientation of the ScN crystal planes was further assessed using X-Ray diffraction (XRD) measurements, as seen in Figure 3. Whereas the ScN peak is clearly resolved for growths on SiC and AlN, the films grown on GaN/SiC template substrates show no separate ScN peak. This is

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01045v1-figure-08d79fd7-f1e1-456d-b53d-18733c4a244a.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01045v1-figure-17ba1b11-77c8-4b04-b166-2a08e170a650.jpg)

because the ScN peak lies within the background of the GaN (002) peak. This is expected given the  lattice  constant  of  ScN  (111)  is  only  0.18%  different  from  the  in-plane  lattice  constant  of wurtzite GaN, 3.189Å. For films grown on AlN/Al2O3 and SiC, separate ScN (111) peaks are observed, yet none of the samples showed cubic ScN (00l) reflections, indicating ScN forms a highly oriented film with  the (111) direction aligned along the 0001 c-axis of the substrate and perpendicular to the growth plane. The peak positions of ScN (111) in the films grown on SiC and are consistent with those reported in literature occurring near 2𝛳 = 34.5˚ [25] . Scans of the ScN (224) peak for a sample grown on SiC indicate six-fold symmetry, with peaks separated by sixty degrees. This is further support for the nature of a cubic-twinned ScN (111) film.

Figure 3: A-B) XRD 2theta-omega scans of ScN grown on 6H-SiC, AlN/Al2O3. C-D) XRD Phi Scan of ScN (224) peak  grown  on  6H-SiC,  XRD  2theta-omega  of  ScN  grown  on  GaN/SiC.  The  XRD  results  indicate  ScN  grows epitaxially in an (111) orientation on the respective substrates, with six-fold in-plane rotational symmetry as seen from the Phi scans.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01045v1-figure-4fff8ae9-24db-4d3e-9843-d4a978dd0e4a.jpg)

The ScN films grown on all three hexagonal substrates (SiC, AlN, GaN) adopted a twinned face centered cubic crystal structure instead of a hexagonal structure. Reasons for the stability of the cubic phase of ScN can be found in the principles of molecular orbital energies. For binary nitrides, the three 2p orbitals of Nitrogen anion and the three lower t2g states (of the crystal-field split five 3d orbitals) of the Scandium transition metal cation hybridize to form bonding and antibonding orbitals. The remaining two 3d orbitals remain as nonbonding energy states, with energy levels close to the transition metal 3d orbitals. A schematic of this pd coupling dominated bonding is shown in Figure 4 and a similar bonding diagram has been illustrated previously in the literature. [15]

Figure 4: Bonding schematic of rocksalt ScN. Octahedral coordination causes d-orbital crystal field splitting into t2g and eg orbitals. All electrons occupy bonding states, indicating an extremely stable cubic structure.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01045v1-figure-420f22ba-018c-44fd-87a5-edbc2ce29fec.jpg)

The three outermost electrons of Sc ([Ar]4s 3d ) bond with three N 2p electrons in a crystal to 2 1 make Sc +3 .  Adding more electrons (e.g using Ti, V, Cr, Mn… instead of Sc) will populate the antibonding and then nonbonding energy states, making the rock-salt crystal structure less stable, and the crystal metallic. On the other hand, ScN is an extremely stable rock-salt semiconductor because of the filled bonding states, with a completely empty band in the Sc +3 configuration. ScN is a semiconductor with an indirect bandgap of 0.9 eV and a direct bandgap of ~2.1 eV [34] . XPS results (not shown) verify the presence of Sc-N bonding and optical absorption measurements (not shown) show a weak band edge absorption near 2.1 eV.

The electrical transport properties of the 30 nm thick MBE grown ScN on GaN/SiC and AlN/Al2O3 template  substrates  was  assessed  using  temperature-dependent  Hall-effect  measurements  from room temperature to 20K, as shown in Figure 5. A high n-type carrier concentration independent of  temperature  was  observed.  The  lack  of  carrier  freezeout  at  low  temperatures  indicates  the nominally undoped ScN obtained in this work is a degenerately doped semiconductor. As shown in  Figure  5,  the  carrier  concentrations  and  mobilities  were  1.55x10 20 /cm 3 and  23  cm /Vs  and 2 1.05x10 20 /cm 3 and 11 cm 2 /Vs for samples grown on GaN/SiC and AlN/Al2O3, respectively. The high carrier concentration is an order of magnitude higher than reported values of the conduction band  density  of  states  for  many  semiconductors,  giving  support  for  its  degenerate,  metallic electrical behavior.  At this stage it is unclear if ScN is strained or relaxed to AlN and if the crystal quality and carrier mobility is affected by the approximately 2.4% lattice mismatch. The obtained mobility  values  are  lower  than  those  reported  previously [6,27-29,31,34,36,38] for  similar  carrier

concentrations and this may be due to increased impurity scattering from domain boundaries in (111) oriented films. The (111) surface is a higher energy surface than the (100) surface for a face centered cubic crystal. Higher surface energy planes are more likely to trap impurities like oxygen, potentially due to a decrease in adatom mobility. This has been shown in ScN, where oxygen concentration was higher for cubic-twinned (111) growth on c-plane sapphire compared to untwinned cubic (111) growth on MgO (111)  [26] . This has also been reported in the case of Si and Ti segregation to twin domain boundaries in MgAl2O4 [35] .

Figure  5:  Temperature  dependent  hall  data  of  ScN  grown  on  GaN/SiC  (left)  and  AlN/Al2O3  (right).  Carrier concentrations and mobilities whose magnitude does not change indicates degenerate doping behavior.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01045v1-figure-3280a32f-978a-4c37-886a-caa6ae5cae31.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.01045v1-figure-aa9b0bf5-e408-4f2f-9bdb-9f9cb30ffa9c.jpg)

A high electron carrier concentration has previously been reported in nominally undoped ScN, with possible causes being linked to nitrogen vacancies, Sc-N antisite defects, and atomic level concentrations  of  oxygen  and  fluorine  originating  from  source  and  crucible  material.  Density functional  theory  (DFT)  calculations  have  shown  oxygen  substitutional  defects  are  lower  in formation  energy  than  the  other  defect  mechanisms  mentioned  above [36] .  Support  for  oxygen incorporating in the film and donating electrons comes from Scandium metal's high affinity for oxygen,  as  evidenced  in  its  large  negative  enthalpy  of  formation  for  Sc2O3  from  Ellingham diagrams  [37] . Carrier mobilities up to 100 cm /Vs at carrier concentrations of 10 2 21 /cm 3 have been previously  obtained  in  ScN  on  MgO  (001) [38] and  mobilities  up  to  284  cm /Vs  at  a  carrier 2 concentration of 3.7x10 18 /cm 3 have been obtained in ScN grown using hydride vapor phase epitaxy (HVPE) on m and r-plane sapphire substrates. The lower carrier concentration and higher mobility in HVPE growth was due to a reduction in impurities in the film, notably oxygen concentration, through utilization of 6N (99.9999%) pure ScCl3 and NH3 as the source materials instead of Sc metal [31] . This points towards an important role that impurities have on determining the carrier concentration and limiting the mobility of ScN films. Using ionized impurity scattering models [39] , assuming all donors are ionized and a density of states effective mass of ~0.35 m e where m e is the free electron mass, a close agreement to the obtained mobility values is found. However, we point out that the interface between rock-salt ScN and hexagonal GaN or AlN is a nonpolar/polar interface, and the polar discontinuity across the interface, assisted by the conduction and valence band offsets  can  give  rise  to  mobile  carrier  concentrations  even  in  the  absence  of  defects  and

impurities [40] . Similar polar/non-polar interfaces have been found in several oxides, but not in the nitride crystals yet. Future work involving the measurement of electronic structure and electron mobility  will  give  further  insight  into  the  mobility  limiting  mechanisms  in  ScN,  and  more importantly, the origin of the mobile charges in the bulk and at interfaces.

In this work, we have reported the MBE growth of highly crystalline ScN thin films on hexagonal GaN, AlN, and SiC substrates. ScN films exhibited solely cubic twinned (111) orientation on all three hexagonal substrates, and did not adopt a hexagonal crystal structure. ScN films exhibited large n-type carrier concentrations of approximately 10 20 /cm 3 with mobilities of approximately 20 cm 2 /Vs.  For  the  first  time,  SEM-EBSD  and  in-situ  RHEED  patterns  confirm  cubic-twinned domains and grain orientation in the epitaxial ScN grown on the hexagonal wide-bandgap GaN, SiC,  and  AlN  surfaces.  This  work  sheds  light  on  the  fundamental  cubic  stability  of  ScN  and provides  a  roadmap  for  future  work  regarding  the  analysis  of  ScN  growth  thermodynamics, epitaxial stabilization, and integration in novel III-nitride device architectures. The findings of the limiting  case  of  ScN  growth  on  AlN  and  ScN  should  be  a  valuable  guide  towards  the  future investigation of highly piezoelectric and ferroelectric GaScN and ScAlN alloys.

This work made use of the Cornell Center for Materials Research Shared Facilities which are supported through the NSF MRSEC program (DMR-1719875). This work was also performed in part at the Cornell NanoScale Facility, a member of the National Nanotechnology Coordinated Infrastructure  (NNCI),  which  is  supported  by  the  National  Science  Foundation  (Grant  NNCI1542081). The authors would like to acknowledge the Air Force Office of Scientific Research, Grant AFSOR FA9550-17-1-0048, for the support of this work. The authors would also like to acknowledge Don Werder for discussions related to EBSD and SEM and Mike Hawkridge for discussions related to XRD.

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Joseph Casamento John Wright Reet Chaudhuri Huili Grace Xing Debdeep Jena
Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN
RF plasma assisted MBE growth of Scandium Nitride (ScN) thin films on GaN
(0001)/SiC, AlN (0001)/Al2O3 and on 6H-SiC (0001) hexagonal substrates is found
to lead to a face centered cubic (rock-salt) crystal structure with (111)
out-of-plane orientation instead of hexagonal orientation. For the first time,
cubic (111) twinned patterns in ScN are observed by in-situ electron
diffraction during epitaxy, and the twin domains in ScN are detected by
electron backscattered diffraction, and further corroborated with X-ray
diffraction. The epitaxial ScN films display very smooth, sub nanometer surface
roughness at a growth temperature of 750C. Temperature-dependent Hall-effect
measurements indicate a constant high n-type carrier concentration of
~1x1020/cm3 and electron mobilities of ~ 20 cm2/Vs.