## Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using DualLayer SiNx Stressors

Wei-Chih Cheng, Student member, IEEE , Minghao He, Siqi Lei, Liang Wang, Jingyi Wu, Fanming Zeng, Qiaoyu Hu, Feng Zhao, Senior member, IEEE , Mansun Chan, Fellow, IEEE , Guangrui (Maggie) Xia, and Hongyu Yu, Senior member, IEEE



Abstract -In this  work,  AlGaN/GaN  HEMTs with  dual-layer SiNx stressors (composed of a low-stress layer and a high-stress layer) were investigated. The low-stress padding layer solved the surface damage problem caused during the deposition of the highstress SiNx, and provided a good passivated interface. The HEMTs with dual-layer stressors showed a 1 V increase in the threshold voltage ( Vth ) with comparable on-current ( Ion ) and RF current gain to  those  without  stressors.  Moreover,  the  off-current  ( Ioff )  was shown to be reduced by one to three orders of magnitude in the strained devices as a result of the lower electric field in AlGaN, which  suppressed  the  gate  injection  current.  The  dual-layer stressor scheme  supports  strain engineering as an effective approach in the pursuit of the normally-off operation of AlGaN/GaN HEMTs.

processes, which introduce surface damages that may deteriorate the amplifying performance of the devices [6]. Even though the cyclic oxidation/wet-etching digital etching processes can effectively avoid the etching caused damage and realize high-performance devices [], [], this technique is hard to be used for industrial application.

Index  Terms -HEMTs,  gallium  nitride,  strain  engineering, threshold voltage, gate leakage

## I. INTRODUCTION

aN-based  high  electron  mobility  transistors  (HEMTs) have  played  an  increasingly  important  role  in  power electronics  and  high  frequency  applications  [1],  [2].  A  high drive current can be achieved due to the high saturation velocity of  electrons  in  GaN  and  the  presence  of  two-dimensional electron  gas  (2DEG)  at  the  AlGaN/GaN  heterojunction  [3]. Normally-off operation is preferred for radio-frequency (RF) power amplifiers to simplify the design of the whole RF system. However,  major  normally-off  device  options,  such  as  gaterecessed  metal-insulator-semiconductor HEMT (MIS-HEMT) [4]  or  HEMT  with  p-type  GaN  gate  [4],  [5],  require  etching G

This  work  was  supported  by  Grant  #2019B010128001  from  Guangdong Science and Technology Department, Grant #JCYJ20160226192639004 and # JCYJ20170412153356899 from Shenzhen Municipal Council of Science and Innovation. Corresponding authors: Guangrui (Maggie) Xia and Hongyu Yu.

Wei-Chih  Cheng  is with the School of Microelectronics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, Guangdong, China, and also with the Department of Electronic and Computer Engineering,  Hong  Kong  University  of  Science  and  Technology  (HKUST), Hong Kong (e-mail: weichih.cheng@connect.ust.hk).

Minghao He, Siqi Lei, Liang Wang, Jingyi Wu, Fanming Zeng, and Qiaoyu Hu are with the School of Microelectronics, Southern University of Science and Technology (SUSTech) , Shenzhen 518055, China.

Feng  Zhao  is  with  the  School  of  Engineering  and  Computer  Science, Washington State University, Vancouver, WA  98686, USA (e-mail: feng.zhao@wsu.edu).

Due to the piezoelectric nature of GaN, the 2DEG concentration  and  thus  the  electrical  characteristics  of  the AlGaN/GaN HEMT can be modulated by applying stress [9], [10]. Besides, experimental work and simulation results showed that  the  stress  provided  by  the  dielectrics  liner  can  induce significant amount of piezoelectric charges in the AlGaN/GaN heterostructure underneath the submicron or smaller gate metal [9],  [11].  Therefore,  strain  engineering  is  believed  to  be  an effective  approach  to  adjust  the  threshold  voltage  ( Vth )  of  an AlGaN/GaN HEMT with a scaled gate length.

Silicon nitride (SiNx) liners deposited using plasma enhanced chemical vapor deposition (PECVD) with dual plasma excitation frequencies have been reported as effective stressors [12].  Increasing  the  duty  cycles  of  low  frequency  plasma excitation  is  useful  to  deposit  highly  compressively-stressed SiNx,  but  it  also  introduces  more  nitrogen  ion  bombardment onto  the  semiconductor  surface,  resulting  in  more  surface damages [11], [13]. In previous work, the Vth of  AlGaN/GaN HEMTs with gate length Lg = 0.1 μm was increased by over 1 V using compressive SiNx liners [11]. However, the semiconductor surface damages caused during the deposition of compressive  SiNx  degraded  the  electrical  performance  of devices,  such  as  the  on-current  ( I on )  decrease  and  off-current ( I off ) increase [11].

Mansun  Chan  is  with the Department  of  Electronic and Computer Engineering,  Hong  Kong  University  of  Science  and  Technology  (HKUST), Hong Kong.

Guangrui (Maggie) Xia is with the School of Microelectronics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China, and  also  with  the  Department  of  Materials  Engineering,  The  University  of British Columbia, Vancouver, BC, Canada (e-mail: gxia@mail.ubc.ca).

Hongyu Yu is with the School of Microelectronics, Southern University of Science and Technology (SUSTech), Shenzhen 518055,  Guangdong, China, also with GaN Device Engineering Technology Research Center of Guangdong,  Shenzhen  518055,  Guangdong,  China,  and  also  with  The  Key Laboratory  of  the Third  Generation  Semi-conductor,  Shenzhen  518055, Guangdong, China (e-mail: yuhy@sustech.edu.cn).

To overcome the surface damage problem with the singlelayer compressive SiNx, in this work, dual-layer SiNx stressors were investigated. A dual-layer SiNx stressor was composed of a low-stress SiNx interlayer for interface passivation and a highstress SiNx layer for compressive stress. The AlGaN/GaN RF HEMTs  with  0.1  μm  gate  length  for  RF  application  were prepared, and their Vth were increased by the dual-layer SiNx stressors.  The  dual-layer  scheme  was  shown  to  effectively prevent  the semiconductor  surface  from  the  nitrogen  ion bombardment  during  the  deposition  of  compressive  SiNx. Besides the increased Vth , the strained devices with dual-layer stressors  also  showed I on and  high-frequency  performance comparable  to  those  of  the  baseline  devices  with  optimal passivation scheme. Moreover, the I off in  the  strained  devices with  the  dual-layer  stressors  was  lower  than  in  the  baseline devices.  The Vth increase  without  etching  process  and  the compromise of electrical performance presents an alternative to pursue normally-off RF AlGaN/GaN HEMT.

## II. Vth OF GaN BASED HEMT

The threshold voltage ( Vth )  of  AlGaN/GaN HEMTs can be expressed by a polarization dependent model, which is given as [14]

$$V _ { t h } ( x ) = \varphi _ { m } ( x ) - \Delta E _ { c } ( x ) - \frac { q N _ { D } d } { 2 \epsilon ( x ) } - \frac { \sigma ( x ) } { \varepsilon ( x ) } d \quad \quad ( 1 ) \quad \text{piezo}$$

where x is the aluminum mole fraction of AlGaN, φm(x) is the barrier  height  of  the  Schottky  gate,  and ΔEc(x) is  conduction band discontinuity between AlxGa1-xN and GaN. ND , d , and ε(x) are doping concentration, thickness, and dielectric permittivity of the AlxGa1-xN barrier, respectively. σ(x) is the total polarization  induced  sheet  charge  density,  which  is  given  as

Fig. 2 Device structure of AlGaN/GaN HEMT with gate length ( Lg ), sourceto-gate length ( Lsg ), and gate-to-drain length ( Lgd ) labelled.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00125v1-figure-a8569060-c589-4e9a-854a-d3940a54db2d.jpg)

TABLE I

DEVICE MATRIX IN THIS WORK

| Device group        | Low-stress (0.3 GPa) SiN x for surface Passivation (nm)   | High-stress (-1 GPa) SiN x for stress introduction (nm)   |
|---------------------|-----------------------------------------------------------|-----------------------------------------------------------|
| 1. Baseline devices | 200                                                       | -                                                         |
|                     | -                                                         | 200                                                       |
|                     | 3.5                                                       | 200                                                       |
| 2. Strained devices | 7                                                         | 200                                                       |
|                     | 10.5                                                      | 200                                                       |
|                     | 14                                                        | 200                                                       |

Fig. 1  Transfer characteristics of the strained devices with different interlayer thicknesses  (0,  3.5,  7,  10.5,  14  nm)  in  comparison  with  a  baseline  device (BSL). The strained devices showed 1 V higher Vth than the baseline device. The device with thicker interlayer  shows  higher  on-current  ( I on ),  consistent with the trend of 2DEG sheet resistance ( R□,2DEG ) extracted using transmission line model (inset).

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00125v1-figure-8986d235-c4f3-4cf1-b9ba-37edb523910d.jpg)

[13]

$$\sigma _ { x } = P _ { s p } ( A l _ { x } G a _ { 1 - x } N ) - P _ { s p } ( G a N ) + P _ { p z } ( A l _ { x } G a _ { 1 - x } N ) - P _ { p z } ( G a N ) \ ( 2 )$$

where Psp and Ppz are  the  spontaneous  polarization  and  the piezoelectric polarization in the AlGaN  and  GaN  layers, respectively. Equation (1) and (2) ignored the effects from the GaN cap and AlN spacer for simplification.  In the AlGaN/GaN heterostructures,  the  piezoelectric  polarization  of  AlGaN  is caused by the tensile strain due to the lattice constant mismatch between AlGaN and GaN, and the GaN layer is considered to be fully relaxed due to the thick buffer layers. By introducing in-plane  compressive  stress,  the  in-plane  tensile  strain  in AlGaN can be neutralized, and the total polarization reduces, resulting in an increase in the Vth of AlGaN/GaN HEMT.

## III. AlGaN/GaN HEMT WITH SINx STRESSORS

The structure of the AlGaN/GaN HEMTs is shown in Fig. 1. The 6 inch Si wafer with MOCVD grown GaN/AlGaN/AlN/GaN epitaxy was purchased from a commercial supplier. The epitaxial structure consists of a 1.05 μm high-resistivity GaN buffer, a 700 nm i-GaN channel, a 0.8 nm AlN spacer, a 19 nm Al0.25Ga0.75N barrier, and a 3 nm GaN cap.  The  device  fabrication  started  with  the  device  isolation using a BCL3/Cl2  based  inductively coupled  plasma  dry etching.  Then,  Ti/Al/Ti/Au-based  metal  stack  was  deposited using  e-beam  evaporator  and  annealed  at  830℃  in  nitrogen ambient to form  the source/drain Ohmic  contacts. After preparing the Ni/Au-based metal gate using e-beam lithography and  e-beam  evaporator,  the  SiNx  layers  were  deposited  by PECVD with dual plasma excitation frequencies. Subsequently, metal pads was deposited after via opening.

In this work, two SiNx deposition conditions were developed. In the baseline devices, the low-stress-SiNx layer was optimized for  passivation  to  improve  the  drive  current,  which  had  an unintentional stress of 0.3 GPa [11]. This deposition condition

Fig.  4  Statistics  of  off-current  ( I off )  of  the  strained  devices  with  different interlayer  thicknesses  and  the  baseline  devices.  The  strained  devices  with thicker interlayers showed lower I off . The strained devices with 7 nm interlayer or the thicker ones showed lower I off than the baseline devices.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00125v1-figure-5c62e949-b176-4e9b-bca3-dbcdb970e84a.jpg)

Fig. 3  H21 current gain of a typical baseline device (BSL) and strained devices with  and  without  interlayers.  The  incorporation  of  interlayer  improved  RF performance  of  strained  devices,  and  the  strained  devices  with  14  nm interlayer showed comparable performance as the baseline device, attaining the cutoff frequencies ( f t ) of 36 GHz. The devices were tested at Vd = 7V and Vg = Vth + 1 V for each device.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00125v1-figure-fb946c0d-8a46-4531-81aa-cb118f6ac3dc.jpg)

was also used to deposit the low-stress interlayer for  surface passivation  in  the  dual-layer  stressor  scheme.  For  the  highstress layer, an increased duty cycles of low-frequency plasma excitation was used to introduce -1 GPa compressive stress to increase  the Vth of  devices.  The  stress  values  were  obtained from the curvature measurements on blanket SiNx films  on  Si substrates. In this work, two groups of HEMTs were fabricated: the baseline devices had a low-stress SiNx layer per device, and the second group (strained devices) had a high-stress layer and may have a low-stress layer as an interlayer per device. In the second  group  with  dual-layer  stressors,  different  low-stress layer thicknesses  were designed as listed in Table 1, and the incorporation of the low-stress layer was proved not influence the  overall  intrinsic  stress  of  the  dual-layer  stressors.  In  this work,  Group  1  and  Group  2  devices  will  be  called  baseline devices  and  strained  devices,  respectively,  even  though  the SiNx  layer  applied  onto  Group  1  devices  were  also  slightly stressed  (0.3  GPa).  The  thicknesses  were  calculated  by  the deposition rate and time.

## IV. ELECTRICAL CHARACTERISTICS

The transfer characteristics of strained devices were shown in Fig. 2, and the curve of baseline devices was also shown for comparison.  Compared  with  the  baseline  devices,  the Vth of strained devices were successfully increased by 1 V, because the compression depleted the 2DEG underneath the gate region, consistent with the previous results [11]. The I off was extracted, as shown in Fig. 3, which was defined as the drain current at gate bias Vg = Vth -2 V and drain voltage Vd = 1 V. Consistent with  the  previous  study  in  [11],  strained  devices  without interlayer  showed  reduced I on and  higher I off because  of  the damaged semiconductor surface from the nitrogen ion bombardment  during  the  deposition  of  the  high-stress  SiNx [11], [13]. For strained devices with interlayers, thicker interlayers effectively increased I on and decreased I off , indicating that the interlayer effectively protected the semiconductor surface during the deposition of the high-stress SiNx. The sheet resistance of 2DEG ( R□,2DEG )  extracted using the transmission line model was also shown in the inset of Fig. 2,  showing  a  consistent  trend  as I on of  devices.  The  strained device with 14 nm interlayer showed a similar I on and a lower I off compared with the baseline devices, suggesting the reduction of surface damages. The reduction of semiconductor damages  also  translated  to  the  better  RF  performance  of strained devices. Fig. 4 plots the current gains (H21) of devices at Vd =  7  V  and Vg = Vth +1 V. Strained devices  with 14 nm interlayers showed a similar H21 current gain to the baseline devices,  with  the  cutoff  frequency ( f t )  of  36  GHz,  while  that without the interlayer showed lower h21 gain and f t of 20 GHz.

It was  shown  that  lower I off was  attained  with  thicker interlayer.  The  higher I off of  strained  devices  without  the interlayer or with the thin interlayers were believed to have been caused  by  the  surface  damages  during  the  high-stress  SiNx deposition.  However,  strained  devices  with  7  nm  or  thicker interlayer showed even lower I off compared with the baseline devices, indicating that the passivation quality was not the only factor determining I off in this study.

From the above data, the devices with 14 nm interlayers had the best performance (similar I on and RF performance, one to three orders of magnitude lower I off and 1 V higher Vth compared with  the  baseline  devices).  Therefore,  these  devices  were further investigated and discussed in the following sections for the  stress  effect  on  AlGaN/GaN  HEMTs.  For  simplification, strained  devices  with  specifically  14  nm  interlayers  will  be called strained devices in the following sections.

## V. STRESS AND DEVICE MODELLING AND SIMULATIONS

To further investigate the influence of the applied stress on 2DEG concentration, the distribution of the external stress and the  electron  concentration  were  simulated  using  two  finite element  analysis  tools,  Victory  Stress  and  Victory  Device, developed by Silvaco,.

Fig. 5(a) and (b) showed the stress simulation results with the measured SiNx intrinsic stress values of 0.3 GPa for the lowstress layer and -1 GPa for the high-stress layer, corresponding to the baseline devices and the strained devices. The high-stress

Fig. 6  Simulation and fitting results with Victory Stress and Victory Device. (a)(b) Simulated stress distribution, (c)(d) subthreshold characteristics (solid lines:  best  fitting  curves  and  dots:  experimental  measurements),  and  (e)(f) electron concentration of the device with a low-stress (0.3 GPa) layer and a high-stress (-1 GPa)  layer, respectively. The high-stress layer caused compression and electron depletion underneath gate. The device with a highstress layer showed a positive Vth shift compared with that with a low-stress layer only (the baseline device).

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00125v1-figure-035dbf5f-7a3b-4a0d-a5a9-cbb990617495.jpg)

layer introduced an in-plane compressive stress (up to -1.2 GPa) underneath the gate area and an negligible tensile stress (&lt; 50 MPa) in the access area, as shown in Fig. 5(b).

The device model was calibrated to match the subthreshold characteristics of the baseline devices, as shown in Fig. 5(c). The trap  densities  and  the  relative  ratio  between  the  applied stress  induced,  lattice  mismatch  induced,  and  spontaneous piezoelectric effects  were used as the fitting parameters. The best fitting parameters generated good fits to the experimental subthreshold I-V data, showing a 1 V Vth shift when the -1 GPa high-stress layer was incorporated, as shown in Fig. 5(d). The Vth shift  was  a  result  of  the  electron  depletion  caused  by  the applied compressive stress. Due to the piezoelectric nature of AlGaN, the compressive stress neutralize the original piezoelectric  polarization  in  AlGaN,  which  is Ppz (AlGaN) in Section II, reducing the concentration of 2DEG, as shown in Fig. 5(f). In contrast, the low-stress layer only caused a slight electron  accumulation  underneath  the  gate,  as  shown  in  Fig, 5(e).

## VI. REDUCED I off OF STRAINED DEVICES

The  gate  length  of  the  aforementioned  devices  were  in submicron scale ( Lg = 0.1 μm), and the electrical characteristics of submicron or even smaller device can be effectively changed by stress layers according to the edge force model [9]. To verify that the reduced I off of  the  strained devices was resulted from the applied stress, we prepared the devices with Lg = 2 micronscale gate length (micron devices). Due to the much larger sizes, the  amount of stresses  that can be introduced  was  much less than that of submicron devices, and thus the electrical characteristics of micron devices were proved to be influenced less by the applied stress [9], [11]. The structure of the micron devices was similar to that shown in Figure. 1, with Lg of 2 µm and Lgd of 10 µm. The transfer characteristics of the submicron devices and micron devices at Vd = 1V were shown in Fig. 6(a) and (b), respectively. Unlike the submicron devices, the micron devices showed no obvious I off difference with and without the stressors.  The  reverse  Schottky  gate  leakage  of  the  devices showed the similar results, as shown in Fig. 6(c) and (d). The different effects of stressors on I off between micron devices and submicron devices suggested that the lower I off of the strained submicron device was caused by the applied stress. Besides, the reverse  Schottky  gate  current I g of  the  submicron  devices overlapped when bias was below -4 V. It implied potentially the  same  leakage  mechanism  dominating  the  leakage  of  two devices  under  the  low  reverse  bias  condition,  and  another mechanism of leakage took place in the baseline devices when higher reverse bias was applied.

In Fig. 6(c) and (d), except the submicron strained device, all devices showed  strong  bias-dependent  leakage  current  in certain bias regions, as indicated with each curve. The strong bias-dependent leakage current of GaN based HEMT could be dominated  by  Fowler-Nordheim  (FN)  tunneling  [15].  The dependence of FN tunneling current density ( JFN ) on the barrier electric field ( E ) is given by

$$J _ { F N } = A E ^ { 2 } e x p ( - B / E )$$

with

Fig. 5  (a)(b) Transfer characteristics of the devices at Vd = 1 V with different gate lengths and different strain conditions. The submicron devices showed different  level  of I off when  stress  was  introduced  while  the  micron  devices showed the  same  level.    (c)(d)  Reverse  Schottky  gate  leakage  showed  the similar phenomena as I off in the transfer curves. The submicron baseline device and two micron devices showed bias-dependent Schottky leakage current in indicated bias regions.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00125v1-figure-421f2946-0c72-4870-b20a-0a9e0b4b8c36.jpg)

Fig. 7  Temperature dependence of reverse Schottky gate leakage of a baseline (left)  and  a  strained  (right)  device.  Reverse  current  of  the  baseline  device showed weaker dependence on the temperature compared with the strained device.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00125v1-figure-9f199f83-f32f-4470-9314-c634a43e8258.jpg)

Fig. 8  Conduction band diagram of gate metal/AlGaN/GaN system with 0.3 GPa  (baseline)  and  -1  GPa  (strained)  stressor  at Vg = Vth -2V.  With  less piezoelectric  polarization,  the  effective  barrier  thickness  is  thicker  for  the strained device, and possibility of FN tunneling is less (inset).

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00125v1-figure-cf0b8ac1-af20-4e0b-8dec-5412cb2fcc76.jpg)

$$B = 8 \pi \Big | 2 m _ { n } ^ { * } ( q \varphi _ { e f f } ) ^ { 3 } / 3 q h \text{ \quad \ \ } ( 4 )$$

where A is  a  constant, E is  the  internal  electric  field  of  the barrier (AlGaN in this system), mn * the  effective  mass of the semiconductor, h the Planck's constant, and φeff is the effective barrier height. FN tunneling current is independent of temperature according to (3). As shown in Fig. 7, the leakage current  of  the  submicron  baseline  device  did  not  change obviously and showed no strong correlation with temperature in  the  strong  bias-dependent  leakage  region,  suggesting  the dominance of FN tunneling. In contrast, the reverse current of the submicron  strained  device  increased  with  temperature significantly, indicating the absence of FN tunneling occurrence. To investigate the reason why FN tunneling was suppressed  by  the  stress,  the  conduction  band  diagram  was simulated using Silvaco Victory Device with the model parameters  calibrated  with  the  subthreshold  characteristics discussed in section V.

The  conduction  band  diagrams  in  the  gate  region  of  the baseline device and the strained device  at Vg = Vth -2  V  were simulated,  as  shown  in  Fig.  8.  The  internal  electrical  field strengths in AlGaN were 3.66 MV/cm and 3.18 MV/cm for the baseline device and strained device, respectively. For a strained device, the compression neutralized the inherent piezo polarization caused by the lattice mismatch at the heterojunction. As a result, the internal electrical field in AlGaN was reduced, and FN tunneling was hence suppressed, reducing the gate leakage of the strained devices.

## VII. CONCLUSION

Due to the piezoelectric nature of GaN, a 1 V increase in Vth of AlGaN/GaN HEMTs was achieved by introducing compressive  stresses  with  the  dual-layer  SiNx  stressors.  The low-stress  SiNx  layer  in  the  dual-layer  SiNx  stressor  scheme successfully retained the similar I on as the baseline devices by avoiding the surface damages caused during the deposition of the highly compressive SiNx layer. As a result, the comparable passivation quality translated to the comparable high-frequency performance  of  the  strained  devices  and  baseline  devices. Moreover, the applied compression reduced the internal electric field in AlGaN, suppressing the leakage current I off caused by FN tunneling when a strained device is under a reverse bias. This Vth increase  without  a  recess  etching  process  or  any compromises of the electrical performance, such as I on , I off , and RF  performance,  supports  strain  engineering  as  an  effective approach in pursuing enhancement-mode AlGaN/GaN HEMTs for RF applications.

## ACKNOWLEDGMENTS

The work was conducted at Materials Characterization and Preparation Center (MCPC) at SUSTech, and we acknowledge the  technical  support  from  the  staff  and  engineers  at  MCPC. Wei-Chih Cheng would also like to thank his labmates Marzieh Mahrokh and Robert Sokolovskij for practical suggestions on this article.

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Wei-Chih Cheng Minghao He Siqi Lei Liang Wang Jingyi Wu Fanming Zeng Qiaoyu Hu Feng Zhao Mansun Chan Guangrui Xia Hongyu Yu
Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors
In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of a
low-stress layer and a high-stress layer) were investigated. The low-stress
padding layer solved the surface damage problem caused during the deposition of
the high-stress SiNx, and provided a good passivated interface. The HEMTs with
dual-layer stressors showed a 1 V increase in the threshold voltage (Vth) with
comparable on-current and RF current gain to those without stressors. Moreover,
the off-current (I_off) was shown to be reduced by one to three orders of
magnitude in the strained devices as a result of the lower electric field in
AlGaN, which suppressed the gate injection current. The dual-layer stressor
scheme supports strain engineering as an effective approach in the pursuit of
the normally-off operation of AlGaN/GaN HEMTs.