## Understanding and Tuning Magnetism in van der Waals-type Metal Thiophosphates

Rabindra Basnet 1* and Jin Hu 2,3#

1 Department of Chemistry &amp; Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR,

## 71603 USA

2 Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA

3 Materials Science and Engineering Program, Institute for Nanoscience and Engineering,

University of Arkansas, Fayetteville, Arkansas 72701, USA

Corresponding author:  basnetr@uapb.edu;  jinhu@uark.edu * #

## Abstract

Over the past  two  decades,  significant  progress  in  two-dimensional  (2D)  materials  has invigorated  research  in  condensed  matter  and  material  physics  in  low  dimensions.  While traditionally studied in three-dimensional systems, magnetism has now been extended to the 2D realm.  Recent  breakthroughs  in  2D  magnetism  have  captured  substantial  interest  from  the scientific community, owing to the stable magnetic order achievable in atomically thin layers of the  van  der  Waals  (vdW)-type  layered  magnetic  materials.  These  advances  offer  an  exciting platform for investigating related phenomena in low dimensions and hold promise for spintronic applications.  Consequently,  vdW  magnetic  materials  with  tunable  magnetism  have  attracted significant attention. Specifically, antiferromagnetic metal thiophosphates M X P 3 ( M = transition metal, P = phosphorus, X = chalcogen) have been investigated extensively. These materials exhibit long-range magnetic orders spanning from bulk to the 2D limit. The magnetism in M X P 3 arises from localized moments associated with transition metal ions, making it tunable via substitutions and intercalations. In this review, we focus on such tuning by providing a comprehensive summary of various metal- and chalcogen-substitution and intercalation studies, along with the mechanism of magnetism modulation, and a perspective on the development of this emergent material family.

## Table of Content

| 1. Introduction ............................................................................... Error! Bookmark not defined.                  | 1. Introduction ............................................................................... Error! Bookmark not defined.            |
|-----------------------------------------------------------------------------------------------------------------------------------------------|-----------------------------------------------------------------------------------------------------------------------------------------|
| 2. Crystal growth............................................................................................................................ | 4                                                                                                                                       |
| 3. Crystal structure                                                                                                                          | ........................................................................................................................ 7              |
| 4. Magnetism                                                                                                                                  | ................................................................................................................................. 9     |
| 4.1. Theoretical background                                                                                                                   | ...................................................................................................... 9                                |
| 4.2. Engineering magnetism in M P X 3 .....................................................................................                   | 13                                                                                                                                      |
| 4.2.1. Metal ( M ) substitution ............................................................................................                  | 14                                                                                                                                      |
| 4.2.1.1. Isovalent substitution ................................................................................                              | 15                                                                                                                                      |
| 4.2.1.1.1. Mn 1- x Fe x PS 3 ..............................................................................                                   | 15                                                                                                                                      |
| 4.2.1.1.2. Fe 1- x Ni x PS 3 ...............................................................................                                  | 17                                                                                                                                      |
| 4.2.1.1.3. Ni 1- x Mn x PS 3 ..............................................................................                                   | 18                                                                                                                                      |
| 4.2.1.1.4. Ni 1- x Cr x PS 3 ...............................................................................                                  | 21                                                                                                                                      |
| 4.2.1.1.5. Mn 1- x Co x PS 3 .............................................................................                                    | 23                                                                                                                                      |
| 4.2.1.1.6. Ni 1- x Co x PS 3 ..............................................................................                                   | 24                                                                                                                                      |
| 4.2.1.1.7. Non-magnetic dopant: Mn 1- x Zn x PS 3 ........................................                                                    | 26                                                                                                                                      |
| 4.2.1.1.8. Non-magnetic dopant: Fe 1- x Zn x PS 3 ..........................................                                                  | 27                                                                                                                                      |
| 4.2.1.1.9. Non-magnetic dopant: Fe 1- x Cu x PS 3 ..........................................                                                  | 28                                                                                                                                      |
| 4.2.1.1.10. Non-magnetic dopant: Fe 1- x Cd x PS 3 ........................................                                                   | 29                                                                                                                                      |
| 4.2.1.1.11. Metal substitution in selenides: Mn 1- x Fe x PSe 3 .......................                                                       | 29                                                                                                                                      |
| 4.2.1.1.12. HE P X 3 ( HE = High Entropy; X = S or Se) .............................                                                          | 31                                                                                                                                      |
| 4.2.1.2. Non-isovalent substitution ........................................................................                                  | 32                                                                                                                                      |
| 4.2.1.2.1. CuCrP 2 X 6 ( X = S or Se).............................................................                                            | 32                                                                                                                                      |
| 4.2.1.2.2. Ag M P 2 X 6 ( M = Vor Cr; X = S or Se)........................................                                                    | 33                                                                                                                                      |
| 4.2.2. Chalcogen ( X ) substitution .....................................................................................                     | 34                                                                                                                                      |
| 4.2.2.1. MnPS 3- x Se x                                                                                                                       | ............................................................................................... 35                                      |
| 4.2.2.2. NiPS 3- x Se x                                                                                                                       | ................................................................................................. 36                                    |
| 4.2.2.3. FeP(S 1- x Se x ) 3 .............................................................................................                    | 37                                                                                                                                      |
| 4.2.3. Inter-layer intercalation ..........................................................................................                   | 39                                                                                                                                      |
| 4.2.3.1. Lithium intercalation ................................................................................                               | 39                                                                                                                                      |
| 4.2.3.2. Organic-ion intercalation ..........................................................................                                 | 41                                                                                                                                      |
| 5. Engineering magnetism through pressure ................................................................................                    | 42                                                                                                                                      |
| 6. Summary and Perspectives ......................................................................................................            | 43                                                                                                                                      |
| Author contributions ....................................................................................................................     | 49                                                                                                                                      |
| Conflicts of interest ......................................................................................................................  | 49                                                                                                                                      |
| Acknowledgement                                                                                                                               | ....................................................................................................................... 49              |
| References                                                                                                                                    | .................................................................................................................................... 50 |

## 1. Introduction

Since the discovery of graphene , numerous two-dimensional (2D) materials have been 1 theoretically predicted and experimentally realized. For a long time, 2D material research was mainly centralized around graphene and transition metal dichalcogenides (TMDs) family in terms of their electronic properties because they display almost all functionalities of solid-state systems such  as  metal,  semimetal,  semiconductor,  and  insulator  as  well  as  exotic  quantum  phases  and phenomena such as superconductivity, charge density wave, and topological quantum phases. In addition to these properties, magnetism in 2D materials has also attracted intensive attention due to fundamental scientific interest in low dimensional orders and technological demands such as spintronics. Graphene  and TMDs 3-5 2 have been found to exhibit magnetism. However, owing to the non/weak-magnetic nature of the constituted atoms/ions, magnetism in these materials mainly arises from extrinsic factors such as defects or doping of guest atoms. Therefore, there has been an intensive search for 2D  materials with intrinsic magnetism. Recently, there have been breakthroughs in discovering intrinsic magnetic orders in atomically thin layers of FePS3 6 , CrI3 7 , CrGeTe3 8 , CrBr3 9 , VI3 10 , Fe3GeTe2 11 and Fe3GaTe2 12 , which greatly expand the realm of the 2D magnetism and provide material platforms not only for gaining deep insight into low dimensional magnetism but also for spintronic applications 13-25 . These developments have motivated the search for additional novel magnetic van der Waals (vdW) materials, resulting in a blossom of magnetic vdW  materials  that  can  be  broadly  categorized  into  two  groups:  (1)  transition  metal  halides (including both dihalides and trihalides), and (2) transition metal chalcogenides (both binary and ternary) involving transition metals from V to Ni in the periodic table (i.e., V , Cr, Mn, Fe, Co, and Ni). Magnetism in those vdW magnets arises from the magnetic moment of the 3 d electrons of the transition metal cations. The metal ions in these compounds are mostly arranged in honeycomb

lattices, except for a few compounds such as transition metal dihalides that is characterized by triangular networks of metal ions 26 .

Metal thiophosphates are one of the model systems among various 2D magnetic materials. Those materials were discovered in the late 1800s by Friedel and Ferrand 27,28 , usually represented by a chemical formula of M X P 3 or M 2P2 X 6, where M , P, and X denote transition metal, phosphorus, and chalcogen elements, respectively. Since their discovery, M X P 3 compounds have been studied in various fields including magnetism 6,29-43 , magneto-optics 44-50 , optoelectronics 27,28,51-53 , Li-ion batteries 27,28,54,55 , and  ferroelectricity 27,28,56-59 . Their  layered  structures  allow  for  mechanical exfoliations down to atomically thin layers 6,29,41-43,60 , creating pathways to study 2D physics. The magnetic members of the M X P 3 ( M = V, Cr, Mn, Fe, Co, and Ni) family are antiferromagnets in which  the M ions carry localized magnetic moments  in  a layered honeycomb  lattice. Antiferromagnetic (AFM) orders have been found to persist down to atomically thin layers and even to the monolayer limit in some M X P 3 6,42,43 ,  thus  these  materials have been established as important candidates for 2D magnets 6,29,41-43,60 . The M X P 3 compounds exhibit semiconducting 61 or insulating 62,63 behavior with band gaps ranging from 1.3 to 3.5 eV. Interestingly, applying high pressure can induce insulator-to-metal transitions 64-71 and even superconductivity 72 in some M X P 3 compounds. Furthermore, these compounds also offer platforms to study correlated electrons in 2D magnetic materials 64,73,74 .  Recent studies have revealed a strong coupling between optically active excitons and magnetism in M X P 3 44-49 . For example, in NiPS3, a novel coherent spin-orbit entangled excitonic state stabilized by AFM order 44 as  well  as  the  correlation  between emitted photon and spins 45 have been reported. Such coupling can lead to an all-optical control of magnetic anisotropy 50 . In addition, a strong correlation of magnons and phonons that generates phonon spin through  the  transfer  of  spin  angular  momentum  has  been  demonstrated  in  FePS3 42,75 .  Such

intertwined degrees of freedom provide a unique opportunity to explore the interplay between magnetism, strong correlation, and light-matter interactions in 2D magnets.

In addition to fundamental research, this material family also offers a large material pool for potential technological applications. The feasibility of obtaining atomically thin layers enables nanodevices and heterostructures fabrication and integration, opening opportunities for utilization in electronics and spintronics. Moreover, in M X P 3, the band gaps ranging from 1.3 to 3.5 eV cover near-infrared to the UV region, enabling the optoelectronic applications in a broad wavelength horizon 27,28 . Additionally, the unusual intercalation-reduction behavior and higher ionic conductivity  of  these  materials  facilitate  potential  applications  in  Li-ion  batteries 27,28,54,55 . Furthermore, their unusual ferroelectricity could lead to new energy and data storage devices and sensors 27,28 .

Given  such  versatility, M X P 3 materials  have  recently  gained  intensive  attention.  In particular, magnetism in those materials has been established as an important research topic 76 . The magnetic properties in M X P 3 strongly depend on the choice of the transition metal M and chalcogen X elements. Not only the AFM transition temperature (Néel temperature, TN ) that changes upon substituting M and X 30-39 , but also various AFM structures can be obtained through M 77-94 and X 3032,95,96 substitutions. Such tuning of magnetism by altering M and X has led to the study of a series of polymetallic 77-94 and polychalcogenide 30-32,95,96 'mixed' M X P 3 compounds. Tunable magnetism  has  been  observed  in  these  mixed  compounds,  providing  promising  candidates  to explore novel phenomena originating from 2D magnetism. In addition to substitution, the layered structure of M P X 3 allows for another doping strategy i.e., the inter-layer intercalation of guest ions. Intercalating various guest species has been reported to cause AFM to ferrimagnetic (FIM) 97-101 and ferromagnetic (FM) 102 transitions  in M X P 3. This suggests that the intercalation  could be  a

promising route to achieve additional magnetic phases in M P X 3  that  may  not  be  accessible  by substitution.

Thus  far,  a  wide  range  of  magnetic,  electronic,  vibrational,  optical,  and  ferroelectric properties of pristine M X P 3 compounds have already been summarized by a few excellent review articles 27,28,76 . Therefore, the focus of this review will be put on engineering magnetic properties through  various  doping  strategies:  metal  substitution,  chalcogen  substitution,  and  inter-layer intercalation, aiming to provide a comprehensive summary with sufficient depth and width for deeper understanding of magnetism in M X P 3 based on magnetic exchanges and anisotropies. This review is organized as follows: summarizing the crystal growth methods and lattice structures, an overall  theoretical  framework  for  understanding  magnetism  in M X P 3,  experimental  efforts  in engineering the magnetism, and the perspective of the development of this field. We hope this review can provide the community with comprehensive information on the existing discoveries in doping  studies  and  an  in-depth  understanding  of  magnetism,  which  serves  as  an  important guideline for further exploring the exciting materials physics in M X P 3 as well as other 2D magnets and their property tuning. We wish to cover all relevant studies in this review. However, given the rapid development of M X P 3 materials, the emerging new discoveries may not be included but can be introduced by future review articles.

## 2. Crystal growth

The studies on functional materials, their properties, and applications, greatly rely on the development of convenient and reliable synthesis methods to produce high-quality crystals. For solid  state  systems,  single  crystals  are  highly  desired  because  a single  crystal  possesses  welldefined crystalline axes so that the intrinsic anisotropic magnetic, electronic transport and optical

properties can be experimentally determined, which are critical to understanding the fundamental physics principles that govern the material properties. In addition, well-defined surfaces and edges of a single crystal enables the surface-sensitive measurements such as angle resolved photoemission  spectroscopy  (ARPES),  scanning  tunneling  microscopy/spectroscopy  (STM/S), etc. which provide valuable information. Conventional single-crystal synthesis techniques include chemical vapor transport (CVT), flux, Bridgman, floating zone (FZ), and Czocharalski methods. The synthesis of M X P 3 compounds goes back to the late 19 th century when Friedel obtained FePS3 by heating a weighed amount of phosphorus pentasulfide with  iron 27,28 . This technique was later used by Ferrand 27,28 to synthesize other sibling compounds ZnPS3, CdPS3, and NiPS3. Nowadays, CVT and flux have become the main techniques to grow the bulk single crystals of M X P 3, which have proven to be effective methods to yield large single crystals for physical characterizations.

A  CVT  method  has  been  widely  used  to  synthesize  pristine,  metal-,  and  chalcogensubstituted M P X 3  compounds as summarized in Table 1. As shown in Fig. 1(a), this method is based on the vaporization of source materials at the hot end of the growth chamber (usually a quartz ampoule), transportation of the vapor along some temperature gradient, and condensation of vapor at the cold end. For M X P 3,  a  mixture  of  elementary  powders of M ,  P ,  and X ,  or  presynthesized polycrystal precursors prepared by solid-state reaction, can be used as source materials for CVT. For CVT growth, a transport agent such as I2, TeCl4, SeCl4, etc., is usually added to the source  material  to  aid  the  vapor  transportation  process.  For M X P 3,  CVT  growth  using  these transport  agents  has  been  reported 31,40,71,88-92,103-107 .  On  the  other  hand,  owing  to  the  volatile elements P and S or Se, CVT growth without a transport agent 33,41,108-113 has also been successfully used to synthesize the single crystals of M X P 3. Experimentally, the source materials (elementary powders with proper molar ratio or pre-reacted polycrystal precursors) along with the transport

agent (if used) are sealed in an evacuated quartz ampoule. The ampoule should be sufficiently long (usually  ⁓10-15  cm)  to  create  a  proper  temperature  gradient  between  the  source  and  sink  to facilitate the vapor transport. Then, the ampoule is placed in a two-zone furnace [Fig. 1(a)] which provides  the  needed  temperatures  and  temperature  gradient  and  heated  at  a  certain  duration 3  phase.  The  source  end  is  kept  at  a  higher ) to establish the thermal gradient, as summarized in Table required  for  the  formation  of  the  desired M X P temperature ( T hot ) than the sink end ( T cold 1. The heating process must be slow to avoid excessive pressure due to volatile elements P and X . Upon the completion of the growth, the furnace either slowly cools at a controlled slow cooling rate or naturally cools to room temperature, and single crystals can be found at the cold end. Single crystals harvested by quenching in ice water (i.e., very rapid cooling) have also been reported 114 . The optical images of single crystals of some pristine and substituted (both metal- and chalcogensubstituted) M X P 3 compounds synthesized using the CVT technique are shown in Figs. 1(b-d).

In addition to CVT, the reactive flux technique has been recently reported to synthesize pristine and metal-substituted M P X 3 single crystals. This method adopts P2 X 5 ( X = S 115-119 or Se 120 ) flux and metal precursors, as summarized in Table 1. First, the metal and P2 X 5 powders in a ratio of 2:3 for monometallic or 1:1:3 for bimetallic compounds is sealed in an evacuated silica tube inside  a  glove  box.  The  mixture  is  then  heated  and  maintained  at  a  certain  temperature  with different heating profiles depending on the target compounds 116 . The excess P2S5 (melting point ~285 °C) 115-119 and P2Se5 (melting point ~214 °C) 120 act as a reactive flux that oxidizes the metal element and enhances solubility to reduce reaction times and increase crystallite sizes. Upon the completion of the growth, the excess P2S5 flux is then removed with a 1:1 mixture of ethanol and water followed by a subsequent treatment using deionized water and acetone 115-119 . On the other hand, the excess P2Se5 flux is removed by the distillation process at a temperature gradient between

400 °C and room temperature 120 . This method can result in sizable single crystals in a relatively shorter synthesis time as compared to a traditional CVT technique, as shown in Fig. 1(e).

## 3. Crystal structure

The  crystal  lattice  structures  and  symmetries  are  critical  in  determining  magnetic properties, as has been theoretically predicted for M X P 3 121 . Varying lattice parameters have been found to strongly affect the magnetic properties 121 . So, understanding crystal structure is essential for gaining deeper insights into magnetism. At first glance, all M X P 3 materials exhibit very similar layered  structures  [Fig.  2(a)].  Careful  structure  characterizations  have  revealed  monoclinic, rhombohedral, and triclinic structures for various M X P 3, as summarized in Table 2. Despite three different lattice structures, M X P 3 materials exhibit common structural characteristics. As shown in Fig.  2(b),  metal  atoms M are  arranged  in  a  honeycomb  lattice.  Each  P  displays  a  tetrahedral coordination, which is covalently bonded with one P to form P-P (P2) dimers perpendicular to the hexagonal plane and three X featuring a (P2 X 6) 4bipyramid structure unit. Such P-P dimer forming (P2 X 6) 4bipyramids fill the center of the M honeycomb lattice. Therefore, these compounds have also been referred to as M 2P2 X 6 in the literature. For chalcogen atoms X that sandwich the metal honeycomb layer, they form almost close-packed surfaces of the layer with an array of octahedral coordinated sites [Fig. 2(c)]. The monolayer M X P 3 can be considered as the monolayer MX 2 where the one-third of M sites are substituted by P-P dimers. Thus, in M X P 3, two-thirds of the octahedral centers are filled by M 2+ cations while the P-P dimers occupy the remaining one-third [Fig. 2(c), P-P dimer in the center is not shown].

As seen in Fig. 2(a), a  finite  vdW gap  of about  3.22-3.24 Å is  present  in M X P 3 27,28,76 . Various  metal  ions M 2+ with  different  ionic  radii  slightly  modify  the  slab  size.  The  two  flat pyramids formed by bonding between a P and three X atoms at the top and bottom of the (P2 X 6) 4-

structural unit [shown in Fig. 2(b)] remain invariable, but the P-P distance is slightly adjusted to accommodate the changes in metal cations. For example, the P-P distance elongates from 2.148 Å in NiPS3 to 2.222 Å in CdPS3 27 , which is accompanied by increases of the layer thickness.

Although the individual lamella is similar for all M X P 3 compounds, their symmetry, and layer stacking to form a bulk lattice structure can vary depending on M and X , as summarized in Table 2. In particular, the symmetries and crystal structures for sulfides and selenides of M X P 3 materials are distinct. Generally, almost all the known sulfides M PS3 exhibit monoclinic crystal structures with a C 2/ m space group, except for PbPS3 106 which has been reported to crystalize in a P 21/ c monoclinic structure as its selenide counterpart, and for HgPS3 119 which is triclinic with a P 1 ̅ space  group  symmetry.  In  sulfides,  the  monoclinic  angle β depends  on  the  metal  cation, ranging from 106.97° for MgPS3 to 107.35° for MnPS3. On the other hand, as summarized in Table 2, selenides M PSe3 process larger P-Se bond lengths and Se-P-Se bond angles as compared to their sulfide counterparts, and mostly crystallize in rhombohedral structures with a R 3 ̅ space group. The exceptions are NiPSe3, CrPSe3, HgPSe3, and PbPSe3 which exhibit monoclinic crystal structures.

Therefore, the lattice structure of M X P 3 appears to be more sensitive to chalcogen rather than  metal.  This  is  further  confirmed  by  substitution  studies.  As  summarized  in  Table  2, substituting metal atoms M does not change the lattice structure in M X P 3 77-93,115,117,118 . Most known metal-substituted sulfide compounds exhibit monoclinic structure with a C 2/ m space group in the entire  substitutional  range.  For  selenides,  previous  works  on  a  bimetallic  compound  Mn1x Fe PSe3 x 87 and  a  high  entropy  compound  Fe1- - x y z Mn Cd In Se3 122 x y z also  found  unchanged  lattice with  rhombohedral R 3 ̅ structures.  On  the  other  hand,  chalcogen  S-Se  substitution  can  induce structure transition from monoclinic ( C 2/ m )  to  rhombohedral ( R 3 ̅ )  in  MnPS3x Se x 32 and  FePS3x Se x 123 , which is consistent with the different lattice structures for their sulfide and selenide end

compounds. One exception is NiPS3- Se  which displays unchanged monoclinic x x C 2/ m structure, which is also in line with the identical C 2/ m space group for NiPS3 31,89,90,92,124 and NiPSe3 125 .

## 4. Magnetism

## 4.1. Theoretical background

Owing to the insulating nature of M X P 3 compounds, their magnetism can be described by local moment pictures. Magnetism in vdW magnetic materials arises from the magnetic moment of the spin and orbital momenta of the 3 d electrons of the transition metal cations. Thus, the choice of transition metal cations plays a vital role in determining magnetism. In the presence of a crystal electric field from the octahedral coordination of the transition metal cations [Fig. 2(c)], the dx 2 -y 2 and dz 2 orbitals among the five d -orbitals of the transition metal point in the direction of the ligands, thereby the electrons in these orbitals experience greater repulsion with ligands and increase the energy of these orbitals. Thus, these two d -orbitals are pushed to higher energy levels in the band structure and referred to as two-fold degenerate high-energy e g orbitals. On the other hand, the remaining three d -orbitals dxz , dyz , and dxy do not directly align towards ligands leading to a weaker repulsion and stabilized to a lower energy level than two e g orbitals. Therefore, these three orbitals lie below e g orbitals ( dx 2 -y 2 and d z 2 ) in term of energy and constitute three-fold degenerate lowenergy  2g orbitals t 126,127 . The splitting of five 3 d orbitals of transition metal ions under an octahedral crystal field is depicted in the schematic in Fig. 2(d). Then, the d electrons of various transition metal cations fill these orbitals following Hund's rule, as presented in Table 3 128 . The occupancy of these orbitals determines the total magnetic moment of the 3 d transition metal cations, with the total magnetic moment given by g J [ ( +1)] j j 1/2 μ B where | |, j g J , and μ B are the total angular momentum quantum  number  (=  spin  +  orbital  angular  momentum),  Landé g -factor,  and  Bohr  magneton,

respectively. When orbital angular momentum is quenched (i.e., L = 0), only the spin magnetic moment  contributes  to  the  total  magnetic  moment,  resulting  in  a  total  magnetic  moment  of 2[ ( +1)] s s 1/2 μ B where   is the total spin quantum number, which is generally the case for transition s metals 126 .

In the classic Heisenberg model, the magnetism can be explained within the framework of isotropic Heisenberg Hamiltonian: H = -2Σ( JSi · Sj ), where J is the exchange coupling, which is considered to be isotropic, the summation is over all pairs of magnetic ions in the lattice and the spins are treated as three-component vectors where Si and Sj are spin magnetic moments of the atomic  site i and j respectively.  The  Heisenberg  model  provides  an  accurate  account  of  the interactions  between  the  localized  magnetic  moments  that  govern  the  magnetic  properties  in insulators (such as M X P 3).  In  vdW  materials,  magnetic interactions  can  be anisotropic and are described by a Heisenberg Hamiltonian with anisotropic exchange: H = -2Σ( JxSiSj + JySiSj + JzSiSj ), where Jx , Jy ,  and Jz are  exchange  couplings  along  the  crystallographic  axes.  In  layered M X P 3, magnetic exchanges within the layer are much stronger than inter-layer interactions 129-131 , hence the  long-range  magnetic  ordering  is  believed  to  be  mainly  governed  by  intralayer  exchange interactions.  The  interactions  between  localized  moments  in  insulating M X P 3  compounds  are mainly mediated through direct and superexchange interactions, as shown in Fig. 2(e). The direct exchanges between neighboring magnetic moments, which result from the overlapping wavefunctions, mainly depend on their spatial separation, and contribute to the nearest neighbor interaction J 1. Despite the fact that the distances between magnetic cations are large (in the order of 3-4 Å), such direct exchange has been found to be important or even dominate the magnetic interactions in some M X P 3 compounds such as MnPS3 129 . On the other hand, in many other M X P 3 materials such as NiPS3, the long-range magnetic coupling between moments is dominated by

metal-chalcogen-metal  ( M X M --) superexchange  interactions  mediated  through  non-magnetic chalcogen X 129 . The superexchange couplings contribute to both the nearest-neighbor interaction ( J 1) and the interactions between further neighbors such as second nearest-neighbor ( J 2), and third nearest-neighbor ( J 3) interactions 129 . The magnetic interactions J 1, J 2, and J 3 are depicted in Fig. 2(f). The nature and strength of superexchange interactions are determined by M X M --bonding angle, d -orbital occupancy of M 2+ ions, and orbital overlap between M 2+ cation and X 2anion 40,129 : According to Goodenough-Kanamori rules 132,133 , the superexchange interaction is ferromagnetic (FM) if M X M --bond  angle  is  close  to  90°  and AFM  when M X M --bond  angle  is  180°.  The occupancy of d orbitals  is  important. For example, CoPS3 and NiPS3 share the same magnetic structure but possess different strengths for superexchange due to their distinct occupancy of d orbitals  for  Co 2+ ( d 7 )  and  Ni 2+ ( d 8 )  ions 130 .  Such  differences  could  be  important  in  designing different strategies to tune magnetism in CoPS3 and NiPS3. The overlap of atomic orbitals also affects the superexchange interaction. Usually, stronger orbital overlap strengthens the superexchange, therefore substituting Se for S in M X P 3 leads to enhanced superexchange because of the extended orbital overlap due to more extended atom orbitals of Se than S 31 .

Furthermore,  structural distortions also affect the magnetism  in M X P 3 40,129,130 . As illustrated in Fig. 2(c) and mentioned above, every metal atom M in M X P 3 is located at the center of  an  octahedron  formed  by  six X atoms.  Such MX 6  octahedra,  however,  possess  a  trigonal distortion that is characterized by the angle θ between the trigonal axis (perpendicular to the ab -plane) and the M X -bond [Fig. 2(c)]. The experimental θ values for various M X P 3 compounds are presented in Table 4. An ideal octahedral possesses the ideal octahedral angle θ ≈  54.75°.  The deviation of θ angle from this ideal value characterizes the trigonal distortion. The crystal field arising from trigonal distortion of MX 6 octahedra together with spin-orbit coupling (SOC) of the

M 2+ cations  introduce  anisotropy  in  an  otherwise  isotropic  system.  Now,  with  an  additional anisotropy term, the full Hamiltonian becomes H = -2 Σ( Jij Si · Sj ) -A Σ( Si z ) , where 2 Jij is exchange interaction between neighboring i th and j th moments and A is single-ion anisotropy parameter that defines the magnetic anisotropy of the system. The strengths of various J's and A determine the magnetism in M P X 3. Table 4 summarizes the experimental values of J and A parameters obtained by  neutron  scattering experiments  for  various M X P 3 materials 35,95,108,129,130 , together  with theoretical  calculated  values  for  VPS3 134 .  These  distinct J and A values  for  different M X P 3 compounds result in diverse AFM structures for this material family, as shown in Fig. 3. When J &gt;&gt; A (for very small A ),  the magnetism is weakly anisotropic and can be explained by the 3D isotropic Heisenberg Hamiltonian, such as MnPS3 35,40 . For large A values, on the other hand, the magnetism becomes rather anisotropic and corresponds to XY (such as NiPS3 40,124 and CoPS3 130 ) or Ising-type (such as FePS3 40 and FePSe3 30 ) magnetism depending on the sign and magnitudes of A . In Mn and Ni systems, the orbital angular momentum ( L ) is quenched for Mn 2+ ( d 5 ) and Ni 2+ ( d 8 ) ions because of their half and fully-filled t 2g orbitals respectively, leading to negligible SOC for magnetic ions 40 . In MnPS3 which possesses relative weak trigonal distortion (octahedral angle θ ≈ 51.67°), the effect of both spin-orbit splitting and trigonal distortion is found to be negligible for the high spin ground state of Mn 2+ 40 , so the magnetism in MnPS3 is governed by the dipolar anisotropy 35,135,136 which results in an out-of-plane moment orientation with a small tilt towards the a -axis (Fig. 3). On the other hand, NiPS3 exhibits greater trigonal distortion characterized by octahedral  angle, θ ≈  51.05°  from  the  undistorted  octahedral  angle  of  54.75°.  This  leads  to remarkable single-ion anisotropy A ≈ 0.3 meV in NiPS3, which is much stronger than that of 0.0086 meV in MnPS3 (Table 4) 35,129,130 . Consequently, Ni moments are aligned within the basal plane perpendicular to the trigonal axis (Fig. 3) 36,40,136 , and this system can be modeled by the anisotropic

Heisenberg  Hamiltonian  with XY -type  anisotropy.  The  situation  is  different  for  FePS3,  which exhibits a substantial magnetic anisotropy with a much higher A ( ≈ 2.66 meV) in comparison to MnPS3 and NiPS3 108,129 . Thus, FePS3 is best described by the Ising Hamiltonian corresponding to the highly anisotropic Ising-type magnetic ordering with magnetic moments aligned along the outof-plane direction 40,108 . In FePS3, the degenerate t 2g orbitals for the high-spin Fe 2+ ( d 6 ) state lead to a stronger trigonal distortion of the FeS6 octahedra ( θ ≈ 51.28° 108,130 ) that causes a significant splitting of t 2g orbitals to lift the degeneracy while the e g orbitals remain doubly degenerate 137 . In addition, the lack of half- or fully-filled t 2g orbitals for high-spin Fe 2+ ions also contribute to the net orbital moment and consequently enhances the SOC. Although, a recent x-ray photoemission electron  microscopy  study  has  demonstrated  that  the  spin-orbit  entanglement  for  Fe 2+ under trigonal elongation plays a key role behind the significant magnetic anisotropy in FePS3 138 ,  the SOC alone may not be a dominant factor behind strong magnetic anisotropy in FePS3 because the SOC for  Ni 2+ ( d 8 )  ion  is  larger  than  Fe 2+ ( d 6 )  ion  but  the  resulting  compound  NiPS3  is  less anisotropic than FePS3 40 . The large crystal electric field arising from the strong trigonal distortion of the FeS6 octahedra might also be attributed to a substantial magnetic anisotropy in FePS3, which has been confirmed by a recent x-ray absorption spectroscopy experiment 137 . In fact, the strong anisotropy due to crystal electrical field i.e., crystal-field anisotropy has been ascribed to Fe 2+ ( d 6 ) ion in different Fe-based compounds 139,140 .

## 4.2. Engineering magnetism in M X P 3

Engineering magnetism in layered magnetic materials not only optimizes properties for technological applications (such as high transition temperature, wider hysteresis loop, and various types of FM and AFM structures) but also provides an effective approach to clarify the mechanism

for the magnetism by identifying the parameters that govern magnetism. Several strategies such as doping 30-32,77-92,95,96,98-100,141-147 , high  pressure 148-151 , and  electrostatic gating 14,16 have  been adopted to tune the magnetic properties in layered magnets. These techniques have been successful in  controlling  the  spin  orientation  in  vdW  magnetic  materials,  which  leads  to  novel  magnetic phenomenon arising from 2D magnetism. Tuning magnetic properties has been one major focus and studied for a long time in the M X P 3 family 78,79,86 . Doping, including metal M and chalcogen X substitutions,  and  inter-layer  intercalation,  has  been  demonstrated  as  a  powerful  technique  to modulate magnetism in M X P 3, which will be the focus of this review as discussed below.

## 4.2.1. Metal ( M ) substitution

Metal substitution has been adopted as an important method to manipulate the magnetic properties in M X P 3. Owing to the structural similarity of the M X P 3 materials, a divalent metal M 2+ ion can be substituted with another divalent metal ion to create a polymetallic 'mixed' compound such as (Mn,Ni) Fe1- PS3, x x Ni1x Mn PS3, x (Mn,Fe)1x Zn PS3, x (Mn,Fe,Ni)1x Co PS3 x and Mn1x Fe PSe3 x 77-92,94,115,117,118,152,153 where two different metal atoms are mixed in a honeycomb lattice as shown in Fig. 4(a). In addition to these bimetallic substitutions, the metal substitution in M X P 3 has recently been extended to mixing of more than two divalent metal M 2+ ions creating medium 122 and high entropy 114 vdW materials. In addition to these bi- and poly-metallic compounds based on isovalent M 2+ ion substitutions, the non-isovalent substitution of monovalent and trivalent ions that leads to a series of quaternary compounds ( M 1) 1+ ( M 2) 3+ P2 X 6 ( M 1 = Li, Cu, Ag, etc; M 2 = V, Cr, In, Bi, etc; X = S and Se) 120,154-162 have also been reported in this material family. Although the focus of this review is the divalent metal substitutions, we have also briefly summarized the magnetic properties of a few magnetic quaternary compounds (Cu,Ag) 1+ (V,Cr) 3+ P2(S,Se)6 that have been

formed by mixing trivalent ions such as Cr 3+ or V 3+ with monovalent metal ions such as Cu 1+ or Ag 1+154-158 .  The  magnetic  exchange J and  single-ion  anisotropy A parameters  are  found  to  be effectively modulated with metal substitutions that lead to efficient control of magnetic properties. Tunable magnetism arising from competing magnetic interactions, magnetic anisotropies, and spin fluctuations has been observed in metal-substituted M X P 3 compounds, which will be discussed in the following sections.

## 4.2.1.1. Isovalent substitution

## 4.2.1.1.1. Mn1x Fe PS3 x

As shown in Fig. 3, MnPS3 and FePS3 exhibit out-of-plane magnetic moment but different Néel 135 and zig-zag 108 type AFM structures for each layer, respectively. Therefore, the tuning of magnetic  properties  arising  from  the  competition  between  two  different AFM  interactions  is expected when Mn 2+  and Fe 2+ ions are mixed, which has been studied by Masbuchi et al. 82 Single crystals of Mn1x Fe PS3 (0 ≤ x x ≤ 1) were synthesized using a CVT technique as detailed in Ref. 82 .

As  shown  in  Fig.  5,  the  magnetic  properties  were  characterized  by  the  temperature dependence of magnetization under various magnetic fields along the easy axis (the c ∗ axis in Fig. 5 is perpendicular to the ab -plane. i.e., the out-of-plane direction) 82 . A few magnetic phases have been identified: AFM order for 0 ≤ x ≤ 0.2 and 0.8 ≤ x ≤ 1 composition, which is characterized by a clear AFM transition in susceptibility without remarkable difference between zero-field-cooling (ZFC) and field-cooling (FC). A broad hump in susceptibility occurs above the AFM ordering temperature TN in end compounds [Fig. 5(a)]. This is a generic feature in many M X P 3 compounds, which has been attributed  to  a  short-range  2D  or  quasi-2D  magnetic  correlation  owing  to  the layered structures. The broad hump is suppressed by substitution, leading to a sharper peak at TN

[Fig. 5(a)], which has been ascribed to the weakening of a short-range magnetic correlation due to randomness introduced by Fe substitution.

Samples in 0.5 ≤ x ≤ 0.6 compositions display significant irreversibility [Fig. 5(b)] and are ascribed to a spin glass phase, which might be attributed to the competition between dominant exchange interactions in MnPS3 and FePS3 phases, namely AFM Mn 2+ -Mn 2+ J 1 interaction and FM  Fe 2+ -Fe 2+ J 1 interaction,  respectively 35,108 (Table  4).  This  is  further  confirmed  by  AC susceptibility 82 . The glass temperature, defined as the temperature where susceptibility displays irreversibility between ZFC and FC measurement, is found to enhance with the frequency in AC susceptibility measurements. The remaining composition regions, i.e., 0.3 ≤ x ≤ 0.45 and 0.6 &lt; x ≤  0.7,  are  characterized  by  an  AFM-like  transition  without  irreversibility  at TN . However, irreversibility  occurs  at  a  lower  temperature. This  has  been  ascribed  by  a  reentrant  spin  glass transition [RSG in the phase diagram in Fig. 5(c)]. Considering equal Mn-Fe substitutions in both end  compounds,  the  reentrant  spin  glass  phase  is  found  to  be  stronger  towards  Fe-rich compositions as compared to Mn-rich compositions, which is manifested by the higher reentrant spin glass transition temperature for x = 0.7 than x = 0.3 82 . Such behavior could stem from much larger single-ion anisotropy A for FePS3 (Table 4) as compared to MnPS3, as has been proposed in dilute alloys 163 .

Overall, Mn1x Fe PS3 displays a non-monotonic doping dependence of x TN with a minimum of around x ≈  0.  Such  behavior  is  widely  seen  in  other  metal-substituted M X P 3  and  is  usually interpreted by spin frustration due to the mixing of two types of magnetic ions compounds (MnPS3 and  FePS3)  with  significantly  distinct  magnetic  exchange  interactions J 1, J 2,  and J 3 35,108 as summarized in Table 4.

## 4.2.1.1.2. Fe1x Ni PS3 x

For Fe1x Ni PS3, the distinct x XY - and Ising-like antiferromagnetism for the end members NiPS3 and FePS3 respectively makes it rather interesting to investigate the evolution between those two magnetic orders with distinct magnetic anisotropies.

Fe1x Ni PS3 single crystals were grown using CVT with a temperature gradient from (760x 700) to (690-600)°C for 200 hours 89,92 . The magnetic properties of Fe1x Ni PS3 were characterized x using temperature and field dependence of magnetization. Figure 6(a) presents the temperature dependence of susceptibility ( χ = M H / ) with the magnetic field of 1 T along a , b , and c *. Here, c * represents the direction that is perpendicular to the crystallographic ab -plane, which is slightly deviated from the crystallographic c axis in a monoclinic unit cell. For end compounds FePS3 ( x = 0) and NiPS3 ( x =  1),  susceptibility first increases upon cooling, forming a broad maximum at around  temperature T max,  followed  with  the  AFM  transition  temperature TN below T max.  On increasing Ni content  , x T N is found to slightly reduce up to x = 0.3, followed by systematic increase with further increasing Ni content [Fig. 6(b)]. Judging from magnetic exchange interaction, such T N increase can be explained by stronger magnetic exchange interactions J 1 and J 3 for NiPS3 129 than FePS3 108 (Table 4). Composition dependence for T max follows a similar non-monotonic trend, but T max  increases  more  remarkably  with  Ni  content  in  Ni-rich  compositions  [Fig.  6(b)]. As mentioned in the previous section on Mn1x Fe PS3, the broad maximum exists in pristine x M X P 3 and has been ascribed to the strong low-dimensional dynamic magnetism pertaining to short-range correlated spins. Similarly, in Fe1x Ni PS3 this broad maximum is also suppressed by substitution, x leading  to  sharper  susceptibility  transition  at T N  in  substituted  samples.  This  suggests  the suppression of the short-range magnetic correlation by substitution in this system. However, the Raman spectroscopy results based on two-magnon Raman scattering reveal that the short-range

dynamic magnetism does not quickly quench but rather persists to compositions much below x = 0.9 92 . Therefore, more efforts are needed to clarify the nature of such a broad maximum above T N.

The rapid suppression of a broad maximum with Fe substitution in NiPS3 also suggests the modification of XY -type magnetism. In fact, the evolution from XY - to Ising-type anisotropy below x &lt; 0.9 is clearly manifested in susceptibility. For pristine NiPS3 ( x = 1), susceptibility measured with field along a ( χa ), b  χb ( ), and c * ( χc* ) axes overlaps above T N but display significant anisotropy below T N  [Fig.  6(a)],  implying  a  moment  orientation  along  the a -axis  and  consistent  with  the reported  magnetic  structure 124 .  However,  by  adding  Fe,  the x ≤  0.9  (i.e.,  Fe  content ≥ 10%) samples  display  anisotropy  even  above T N, and χc* exhibits much  stronger  temperature dependence. Those observations are characters for highly anisotropic Ising-type magnetism with out-of-plane moment orientation of the end compound FePS3 (  = 0) 108 x . Therefore, a transition from XY - to Ising-type anisotropy may start with only 10% Fe substitution in NiPS3. Such sensitive tuning of magnetic anisotropy in NiPS3 by just 10% Fe substitution might be attributed to a much stronger ( ≈ 9 times) single-ion anisotropy ( A ) for FePS3 108 than NiPS3 129 (Table 4).

## 4.2.1.1.3. Ni1x Mn PS3 x

Ni1x Mn PS3 x provides  a  platform  to  study  spin-flop  transitions  under  relatively  low magnetic fields. In AFM systems, a magnetic field along the easy axis exceeding a critical spinflop field H SF drives the magnetic moments to rotate to a canted configuration with a component perpendicular to the field direction, resulting in a net moment along the easy axis 164,165 . Such fielddriven moment reorientation from AFM to SF state is known as the spin-flop (SF) transition, which manifests  into  a  super-linear  behavior  in  field-dependent  magnetization  measurements  (i.e., magnetization upturn). This is different from the spin-flip transition in which the moments are

polarized  to  the  magnetic  field  direction  under  a  strong  field  and  is  characterized  by  a magnetization saturation-like behavior. For MnPS3 with magnetic moment along the out-of-plane direction (Fig. 3) 79,135 , a SF transition in the isothermal magnetization has been observed under out-of-plane  magnetic  field  ( H ab ⊥ )  but  is  absent  under  in-plane  field  ( H ab // )  [Figs.  7(a)(c)] 10,28,65,120,147 .  During  this  SF  transition,  the  magnetic  moments  undergo  continuous  rotation towards the ab -plane 135 . Although the SF transition was discovered a long time ago 166 and widely studied from bulk to atomically thin MnPS3 29 , it has been reported only recently in NiPS3 90 . NiPS3 displays an SF transition under the in-plane field of ~ 6 T at 2 K [Fig. 7(c)], which is consistent with the almost in-plane moment orientation of this compound (Fig. 3) 33,112,167 ,  as  shown by a black arrow in Fig. 7(c). Also, the zig-zag AFM structure with moments oriented along a -axis leads to an anisotropic SF transition that is sensitive to the in-plane field orientations 90 .

The distinct SF behavior in NiPS3 and MnPS3 indicates an evolution of SF transition with composition in 'mixed' compounds Ni1- Mn PS3. Indeed, magnetism is found to be highly tunable x x with composition. Figures 7(b) and (c) show that the in-plane and out-of-plane magnetizations exhibit  a  systematic  enhancement  upon  increasing  Mn  content x ,  consistent  with  the  greater magnetic moment of Mn 2+  than Ni 2+ . Interestingly, the SF transitions are also extremely sensitive to composition variation 90 . The SF transition in NiPS3 under an in-plane field disappears up to 5% Mn substitution ( i.e ., x = 0.05 in Ni1x Mn PS3, Fig. 7(c)). Similarly, the x H SF for the out-of-plane field in MnPS3 is reduced by half with 5% Ni substitution ( i.e ., x = 0.95) and disappears upon 10% substitution ( x = 0.9) [Fig. 7(b)]. Such highly sensitive nature of SF transition to light substitution of magnetic atoms is very different from that of non-magnetic substation. It has been found that 20% substitution is needed to reduce H SF by half in Zn-substituted MnPS3 79,86 . In Ni-substituted MnPS3,  the  substantially  different  single-ion  anisotropy  (Table  4)  may  explain  the  efficient

suppression of SF transition. A similar mechanism has also been proposed for the suppression of H SF in MnPS3 under pressure 136 . In addition, Ni-Mn substitution can also be viewed as inducing magnetic impurities, especially in low-substitution levels. Hence, it is necessary to consider the magnetic interaction to understand the observed sensitive doping dependence in Ni1x Mn PS3. The x magnetic ordering temperature TN characterizes the strengths of magnetic interactions. For lightly substituted samples with x close to 0 or 1, the T N is found to only change slightly as compared to the  parent  compounds  NiPS3  and  MnPS3,  which  is  interesting  given  that  the  light  Ni-Mn substitution drastically suppresses the SF transitions. This suggests that the efficient suppression of the SF transition with light magnetic substitution in Ni1x Mn PS3 can be attributed to the tuning x of single ion isotropy rather than exchange interaction.

The  modification  of  magnetic  anisotropy  with  Ni-Mn  substitution  in  Mn1x Ni PS3 x 88 is further demonstrated by the temperature dependence of susceptibility ( χ = M H / ) [Fig. 7(d)]. For compositions 0≤ x ≤0.5, the out-of-plane susceptibility ( χc , measured under an out-of-plane field) is significantly reduced below T N in comparison to in-plane susceptibility ( χab , measured under an in-plane  field),  implying  moment  orientation  along  the c axis,  consistent  with  the  reported magnetic  structure  of  pristine  MnPS3 79,135 . This  susceptibility  trend  is  reversed  on  further increasing Ni content above   &gt; 0.5 in which x χab &lt; χc below T N 88 , suggesting switching of magnetic easy axis from out-of-plane to in-plane direction above x &gt; 0.5. These results agree well with a theoretical study that predicts the magnetic transition from Néel-type (where all nearest-neighbor spins are aligned antiparallel as shown in Fig. 3) in pristine MnPS3 to zigzag-type in pristine NiPS3 (Fig. 3) at around x = 0.25-0.5 153 .

In addition, the T N and T max (broad maximum temperature) in susceptibility also provide useful information. As shown in Fig. 7(e), both T N and T max undergo non-monotonic dependence

on Ni-Mn substitution with a minimum around   = 0.5 x 88,90,153 that can be ascribed to the attenuation of the magnetic interaction due to magnetic disorder in such a magnetically substituted system. T max  is  much  larger  than T N  for  both  MnPS3  and  NiPS3,  but  is  comparable  with  increasing substitution levels [Fig. 7(e)], reminiscent to the observation for Fe1x Ni PS3 x 89,92 described above. Furthermore, for x = 0.5 composition, the PM to AFM transition at T N = 42 K is followed by the emergence  of  a  reentrant  spin  glass  state  at  low  temperature 153 ,  which  is  manifested  by  the irreversibility between ZFC and FC below T = 30 K similar to the case of Mn1x Fe PS3 described x above 82 .

## 4.2.1.1.4. Ni1x Cr PS3 x

The Cr-based layered compounds, such as CrI3, Cr2Ge2Te6, CrCl3, and CrPS4, have recently gained intensive attention because of their robust magnetic order persisting in the 2D limit 7,8,168170 .  Surprisingly,  the  study  of  Cr-based M X P 3  compounds  has  been  very  limited.  So  far,  only CrPSe3 171 and  Cr2/3PS3 172 have  been  reported  while  the  stoichiometric  CrPS3  has  not  been experimentally realized. This has been attributed to the weakened P-P dimerization that favors the formation of Cr 3+ cation instead of the +2 metal valence required to stabilize the M X P 3 lattice 173 . The direct substitution of Cr 3+ for M 2+ ion in M X P 3 is challenging from a chemical valence balance perspective, which may eventually lead to vacancies at metal sites. A similar issue also occurs for V PS3 ( x x = 0.78 174,175 and 0.9 71 ) in which V 2+ and V 3+ ions coexist and lead to V vacancies. Indeed, Cr substitution in M X P 3 has been found to be challenging in comparison to other divalent metal ion substitutions 88-90,92,176,177 .

So far, light substitution of up to 9% without inducing a clear signature of vacancies in NiPS3 has been recently reported 178 . The lack of vacancies from composition analyses implies an

isovalent  substitution  of  +2  valence  for  Cr  ions.  Interestingly,  a  low  Cr  amount  already  can efficiently modulate the magnetism in NiPS3. As shown in Fig. 7(f), first, the magnetic transition temperature T N is found to reduce significantly from 155 K in NiPS3 to 34 K in the x = 0.09 sample. Second, the SF transition under an in-plane magnetic field in NiPS3 is significantly suppressed [Fig. 7(f)]. Also, the SF transition starts to occur even under a weak out-of-plane magnetic field of &lt; 1T in the x = 0.09 sample, which strongly implies moment reorientation upon Cr substitution. Evaluating the characteristic field for spin flop, magnetic exchange, and magnetic anisotropy also reveals that the magnetic anisotropy is significantly suppressed by Cr substitution. Furthermore, in addition to SF transition, a moment polarization-like behavior has been observed under both inplane  and  out-of-plane  fields,  with  a  similar  polarization  field  of  ~8T  and  a  small  saturation moment of 0.24 µB per formula unit.

Suppressed  SF  transition  and  more  isotropic  magnetization  are  consistent  with  a suppression of magnetic anisotropy upon Cr substitution, which gives rise to more controllable moment orientations  and  eventually  the  moment  polarization  in  the x =  0.09  sample.  Indeed, similar field-induced moment polarization at relatively low magnetic fields have also been seen in quite a few Cr-based AFM compounds such as CuCrP2S6 154,155 , CrPS4 179 , CrCl3 180 , and CrSBr 181 . However, owing to the 3+ valence of Cr ions instead of the 2+ metal valence expected in M X P 3, substituting Cr is limited to only 9% in NiPS3, as discussed above. This makes it difficult to explore the potential of this route.

Therefore, recently, an alternative approach that balances the valence by co-substituting mono-valent metal ions together with the tri-valent Cr ions has been reported, through which all M 2+ ions can be replaced to tune the magnetism more efficiently 182 . This work provides a new

doping strategy in the M X P 3  family,  which successfully substitutes an equal Cu and Cr for Ni leading to a wide range of medium-entropy compositions Cu Ni2(1- )Cr P2S6 (0≤ x x x x ≤1).

## 4.2.1.1.5. Mn1x Co PS3 x

Compared to other metal substitutions, Co substitution has been fairly elusive in M X P 3 with only a few recent studies 115,117,118 . This might be due to the challenges in crystal growth for CoPS3 118 which causes this compound and its derivatives  to  be less-explored 36,109,130,183 . A recent breakthrough in reactive flux technique using P2S5 and metal precursors offers an opportunity to study Co-substituted M X P 3 compounds 115-119 , as described in section 2. The Mn Co2x x P2S6 single crystals can be obtained by annealing the stoichiometric mixture of Mn, Co, and P2S5 powders at 540°C for 72 hours 118 .

The two parent compounds Mn2P2S6 (Néel-type AFM with out-of-plane easy axis) and Co2P2S6 (zig-zag type AFM with in-plane easy axis) exhibit distinct AFM ordering, so magnetism is expected to be tunable with substituting. As shown in Fig. 8(a), the magnetic susceptibility of Mn Co2- P2S6 lacks significant irreversibility between ZFC and FC in the entire temperature range, x x suggesting AFM ordering below TN without  spin-glass  state  that  is  also  seen  in  Fe82 and  Nisubstituted 153 Mn2P2S6. Similar to many other metal substituted M X P 3 82,86,88,90,153 , TN also exhibits a non-monotonic composition dependence, showing maximum values for the two end compounds ( x =  0  and  1)  and  reduces  upon  mixing  the  metal  atoms.  In  addition,  the  broad  maximum temperature T max observed just above TN also displays a similar variation with substitution, except that the broad maximum in susceptibility is completely suppressed for the x = 1 (50% Mn and 50% Co) sample, as shown in Fig. 8(a). Such suppression is also observed in thin flakes of Mn2P2S6, which has been ascribed to the reorientation of Mn 2+ moments that gives rise to a weak FM state 184 .

Similar weak ferromagnetism may also be responsible to the rapid rise in the susceptibility at low temperature below T &lt; 30 K [Fig. 8(a)] and non-linear isothermal magnetization at T = 2 K [Fig. 8(b)] for this x = 1 sample. Nevertheless, one should always be caution about the presence of trace FM impurities in doped materials.

The evolution  of  Curie-Weiss  temperature θ cw  extracted  from  the  linear  fit  of  the  high temperature ( T &gt;  200  K)  paramagnetic  (PM) region of the inverse susceptibility also provides useful information 118 . θ cw is negative for AFM Mn Co2- P2S6, which undergoes a non-monotonic x x variation with Mn-Co substitution and reaches the maximal (i.e., less negative) at x = 1, indicating the attenuation of AFM interaction around this composition. This is probably due to magnetic frustration owing to the competition between distinct AFM exchange interactions J 1, J 2, and J 3 for Mn2P2S6 35 and Co2P2S6 130 .

## 4.2.1.1.6. Ni1x Co PS3 x

Magnetic properties of Co-substituted NiPS3 (Ni1x Co PS3) have been investigated in both x single crystals and nanosheet (NS) samples 91 . Ni1x Co PS3 single crystals were grown using a CVT x technique as shown in Table 1. For NS samples, Ni1x Co PS3 (0 ≤ x x &lt; 0.5) NS of average thickness of 8 nm (around 10 layers) were grown by a chemical vapor conversion method via a two-step process: First, the metal hydroxide NS precursor containing various Ni:Co ratios were synthesized on carbon cloth through a wet chemical method. Second, these metal hydroxide precursors were loaded downstream of an evacuated custom-designed fused silica socket tube with a mixture of P and S positioned on the other side. Ultrathin Ni1x Co PS3 NS can be evenly grown on carbon cloth x over a reaction time of 90 min at 480° to 490°C with an argon gas flow [Fig. 8(c)] 91 .

Magnetization measurements with the background from carbon cloth removed are shown in Fig. 8(d). T N ≈ 155 K for pristine NiPS3 is suppressed by Co substitution for both single crystals and NS, which is in line with the general trend of metal substitution in M X P 3 as described above. In contrast to bulk single crystals, susceptibility for all Ni1x Co PS3 (0 ≤   ≤ 0.4) NS samples display x x low-temperature  upturns,  suggesting  the  rise  of  weak  ferromagnetism.  Field  dependence  of magnetization [Fig. 8(d)] also reveals magnetic hysteresis over a low field region (| H | &lt; 300 Oe), which becomes more obvious with increasing Co content.

Providing similar lattice parameters and zig-zag type AFM structures for pristine NiPS3 and CoPS3, it is not surprising that Co-Ni substitution does not cause significant modification in magnetic properties. The low-temperature magnetization upturn and magnetic hysteresis occur in NS samples, which might be attributed to the sulfur vacancy in NSs. Electron spin resonance (ESR) spectroscopy measurements 91 have revealed that the sulfur vacancy formation, which is in line with the rise of ferromagnetism with Co substitution. Defect-induced ferromagnetism has been observed in the atomically thin layers of non-magnetic 2D materials such as graphene 2,185 and MoS2 4,186 . As  mentioned  earlier  in  section  4.1,  in  NiPS3,  the  magnetic  interactions  are  mainly governed by the Ni-S-Ni superexchange interactions, occurring through the overlapping of halffilled Ni e g and S 3 p orbitals that mediates the effective electron hopping between neighboring  Ni sites 129 . Therefore, tuning of magnetic states due to sulfur vacancy is plausible in Ni1x Co PS3 NS. x In fact, the theoretical calculations have  demonstrated  the  disruption of anion-mediated superexchange  interaction  between  Ni  moments  due  to  sulfur  vacancy 91 . Furthermore,  the calculated electronic structure has revealed unoccupied in-gap-like states that could serve as a carrier  trap  site  and  hinder  the  charge  transfer  process,  further  suppressing  superexchange interaction and might facilitate other competing magnetic phases in NiPS3.

## 4.2.1.1.7. Non-magnetic dopant: Mn Zn1- PS3 x x

Magnetic properties of Zn-substituted MnPS3 have been widely studied using magnetization 78,79,86 and Raman 152 measurements. Up on replacing Mn by non-magnetic Zn, the broad maximum immediately above T N  in  susceptibility  measured  with  in-plane  field  starts  to vanish with increasing Zn substitution, leading to a sharp susceptibility peak at magnetic transition T N 86 . This suggests a breakdown of short-range correlation, as expected for metal substitution in M X P 3 82,88,89,92 . In addition, for Zn-rich  samples  (Zn  content  ≥  0.5),  the  low-temperature susceptibility displays an abrupt enhancement, which has been ascribed to a weak PM behavior of the significant number of isolated spins due to magnetic dilution by Zn 86,152 .

Suppression of transition temperature T N by Zn substitution is seen in both susceptibility 86 and Raman 152 experiments. Unlike magnetic ion substitutions that always lead to a U-shape nonmonotonic composition dependency of T N, non-magnetic Zn substitution gradually suppresses T N to zero temperature up to 50% substitution level in magnetization measurements 78,86 [Fig. 9(a)], or even  to  70%  from  extrapolating  the  results  from  Raman  spectroscopy 152 [Fig.  9(b)].  This  is surprising given the critical concentration for site dilution in a honeycomb lattice with nearestneighbor  interactions  ( J 1)  is x =  0.7 187 .  Therefore, J 1  alone  may  not  explain  the  behavior  of Mn Zn1- PS3, and the second ( x x J 2) and the third ( J 3) nearest-neighbor interactions, though weaker than J 1 in MnPS3 (see Table 4), might be ascribed for the magnetic stability below x &lt; 0.7 86 . Of course, measurements on the addition of high-Zn samples would provide a better estimate of the critical composition, which was determined by linear extrapolation of a few compositions 152 as shown in Fig. 9(b).

The impact of Zn substitution in MnPS3 is further manifested as reduced SF transition field H SF 79 . Substituting Zn for Mn breaks down the long-range magnetic order, resulting in 'weakly bound' Mn moments aligned along the out-of-plane direction. For MnPS3 in which the dipolar anisotropy dominates, the local dipole field along the out-of-plane direction may be attenuated by these  weakly  bound  moments.  Furthermore,  replacing  a  Mn  with  a  non-magnetic  Zn  is accompanied by a vanishing moment at the substitute site, which affects the nearby Mn moments and causes them to be canted 78 .  On a larger scale, this leads to an average staggered magnetic moment which consequently suppresses the magnetic anisotropy of the system, which eventually suppresses H SF 79 .

## 4.2.1.1.8. Non-magnetic dopant: Fe1- Zn PS3 x x

Magnetic dilution  by  non-magnetic  Zn  substitution  has  also  been  studied  in  Ising-type antiferromagnet FePS3 94 .  Substituting  Zn  in  FePS3  is  reported  to  induce  weak  ferromagnetism associated with spin/cluster spin glass 94 . As shown in Fig. 9(c), substituting Fe with non-magnetic Zn suppresses T N. For Zn content x greater than 0.3, significant irreversibility between ZFC and FC measurements starts to occur at  temperatures  below T N,  which  has  been  ascribed  to  weak ferromagnetism  associated  with  glassy  behavior 94 . For  high  Zn  samples  (0.7  ≤ x ≤  0.9), susceptibility upturn appears at low temperatures, which has been attributed to the emergence of FM order with an out-of-plane easy axis 94 . This conclusion is also supported by the Curie-Weiss temperature ( θ CW), which becomes less negative with increasing Zn substitution and even attains positive values for χ ⊥ of x = 0.7 and 0.9 samples, suggesting the attenuation of AFM interactions and development of FM correlation with Zn substitution in FePS3 94 .

The rise of ferromagnetism is further supported by the field dependence of magnetization. The in-plane magnetization displays linear field dependence for all compositions and temperature ranges. However, under H ab ⊥ magnetic field, the x = 0.9 sample displays magnetic hysteresis and saturation behavior with saturation moment reaching ~4 μ B/Fe, which is consistent with the S = 2 Fe 2+ 94 .  The  theoretical  study  further  reveals  the  key  role  played  by  hole  doping  to  stabilize ferromagnetism in Zn-substituted FePS3 94 . In highly Zn-substituted samples x = 0.7 and 0.9 94 , the XPS result reveals the presence of Fe 3+ ion in addition to Fe 2+ ion, leading to hole doping and the subsequent rising of FM interactions mediated by bound magnetic polarons induced impurityband-exchange in such diluted environment induced by Zn substitution in FePS3.

## 4.2.1.1.9. Non-magnetic dopant: Fe1- Cu PS3 x x

In addition to Zn, magnetic dilution in FePS3 has also been realized by Cu substitution 188 . Cu substitution up to 15% is found to suppress T N to ≈ 108 K from that of 120 K in pristine FePS3 [Fig. 9(d)] 188 , consistent with the result obtained for Zn-substituted FePS3 94 and can be attributed to the suppression of magnetic exchange interactions, as discussed in the previous section. Other than that, the susceptibility for the substituted sample is highly similar to that of the pristine FePS3: The out-of-plane susceptibility measured with a magnetic field perpendicular to the basal plane displays  a  much  stronger  temperature  dependence  below T N  than  in-plane  susceptibility.  In addition, in the PM state, susceptibility displays strong anisotropy, with a much higher value for the out-of-plane susceptibility that is similar to undoped FePS3 [Fig. 9(d)]. These observations suggest that magnetic anisotropy is not strongly modified upon Cu substitution up to 15%.

In field-dependent magnetization, the 10% Cu-substituted sample displays a weak nonlinearity under an out-of-plane magnetic field [Fig. 9(e)], which was claimed to be a signature of

weak ferromagnetism due to the reorientation of canted moments, and has also been observed in Zn- 79 and Ni-substituted 90 MnPS3. In addition to a moment canting scenario, other mechanisms, such as sulfur vacancy which has been seen in Co-substituted NiPS3 nanoflakes 91 (see  section 4.2.1.1.5) and the presence of the finite clusters of uncompensated spins 188 might also give rise to weak ferromagnetism in Cu0.15Fe0.85PS3.

## 4.2.1.1.10. Non-magnetic dopant: Fe1- Cd PS3 x x

Cd  as  another  non-magnetic  dopant  has  been  studied  a  long  time  ago  on  a  50%  Cdsubstituted  Fe0.5Cd0.5PS3  sample 189 .  Magnetic  phase  transition  is  not  observed  in  susceptibility measurements down to 57 K. The Curie-Weiss temperature displays positive values, decreasing from 104 K for pristine FePS3 to 40 K for Fe0.5Cd0.5PS3. The positive Curie-Weiss temperature even in pristine FePS3 appears interesting given it well defined AFM ground state. It might be ascribed to the competition between the direct FM J 1  and indirect AFM J 2  interactions 189 . The suppression of Curie-Weiss temperature upon introduction of Cd in FePS3 can be attributed to the attenuation of direct J 1 owing to the expanded lattice due to Cd substitution, which increases the nearest neighbor distance of Fe 2+ by 1.95% 189 . A more concrete understanding may be obtained by future substitution studies covering more Cd compositions.

## 4.2.1.1.11. Metal substitution in selenides: Fe1x Mn PSe3 x

Most of the metal substitutions were performed on sulfides as summarized above, whereas the selenide M PSe3 compounds are relatively less explored. Mn-Fe substitution has been reported in selenide compounds MnPSe3 and FePSe3 87 , which are characterized by Néel-type and Isingtype magnetic structures with in-plane and out-of-plane moments, respectively (Fig. 3). Similar to

sulfide  FePS3  stated  above,  anisotropy  between  out-of-plane  susceptibility χ ⊥ and  in-plane susceptibility χ // above T N is a character of Ising-type magnetism in FePSe3. Such anisotropy is suppressed by Mn substitution for Fe [Fig. 10(a)] 123 , which is expected since the end compounds FePSe3 and MnPSe3 possess different magnetic structures with different easy axes. Interestingly, the susceptibility anisotropy below T N suggests that the out-of-plane magnetic easy axis for FePSe3 is  robust  against  Mn-substitution  up  to  90%,  which  is  also  supported  by  the  emergence  and evolution of the SF transition. SF transition is not observed up to 9T in FePSe3 due to the strong magnetic anisotropy for Ising-type magnetism. Heavy Mn substitution leads the SF to occur in out-of-plane magnetization only, and further increased Mn content beyond 90% causes the SF transition to appear in in-plane magnetization, implying the switching of easy axis from out-ofplane to in-plane when Mn content x &gt; 0.9 [Fig. 10(b)]. The rotation of the magnetic easy axis occurring only above 90% Mn for Fe substitution suggests a highly anisotropic magnetic order in FePSe3. This can be estimated from the relative magnitudes of single-ion anisotropy ( A ) for the two end compounds FePSe3 and MnPSe3. Though the experimental value of A is still lacking for FePSe3, in sulfide counterparts FePS3 108 possesses much higher A by  &gt;  300 times than that of MnPS3 35  (Table 4). Expecting a similar scenario in selenide samples, the robust magnetic easy axis against up to 90% Mn substitution in FePSe3 can be understood.

Because both end compounds FePSe3 42 and MnPSe3 43 exhibit 2D magnetism down to the monolayer limit, exploring possible 2D magnetism in their mixed compounds (Fe1x Mn PSe3) is x interesting. Having said that, the strong frustration arising from mixing two different magnetic metal ions may destabilize magnetic order in the 2D limit. Indeed, such mixing suppresses TN and leads it to reach a minimum for 50% substitution in studies using both single crystals 123 [Fig. 10(c)] and  polycrystals 87 [Fig.  10(d)].  This  appears  to  be  a  generic  behavior  for  all  polymetallic

M X P 3 82,86,88,90 . In addition, a mixed phase consisting of both Fe 2+ - and Mn 2+ -type ordering, forming nano-sized chemically disordered clusters in intermediate compositions (0.25 &lt;   &lt; 0.875) has also x been discovered 87 [Fig. 10(d)].

## 4.2.1.1.12. HE X P 3 ( HE = High Entropy; X = S or Se)

High  Entropy  ( HE )  alloy  involves  the  mixing  of  five  or  more  elements  each  with  a composition of 5-35 atomic percentage. The composition of HE compounds can be greatly varied by adjusting the ratios of constituent elements. Such flexible composition stoichiometry allows for property  tuning  with  a  wide  compositions  range.  Incorporating  multiple  elements  also  offers various valence states and spin states in a system. Depending on the choices of elements, the distribution of charges and spin interactions may vary significantly. Furthermore, the presence of multiple elements results in a complex and disordered atomic structure. Hence, with the added complexity, HE compounds provides an opportunity to investigate the interplay between charge, spin, and composition degrees of freedom. Recently, the bimetallic substitution in M X P 3 has been extended to the realm of HE compounds 114,122,190 . Providing various anisotropy of ions and diverse magnetic structures for different M X P 3  compounds, such a strategy is expected to lead to rich magnetic properties and phases.

For  Mn0.25Fe0.25Co0.25Ni0.27P1.04S3 114,190 with  equal  molar  ratio  of  metal  atoms,  a  welldefined PM to AFM transition at T N = 70 K is found in susceptibility measurements 114 [Fig. 11(a)]. Deviation from this equal metal concentration results in broader or less-obvious AFM transition, as observed  in Mn0.2Fe0.3Co0.25Ni0.25PS3 190 . In Mn0.25Fe0.25Co0.25Ni0.27P1.04S3, the magnetic moments are likely to be aligned perpendicular to the basal plan, providing a weaker temperature dependence for susceptibility under an in-plane field. A spin-glass state is also proposed due to the

emergence of irreversibility between ZFC and FC susceptibility at a temperature below T N  [Fig. 11(b)]. Similarly, the spin-glass phase has also been observed in a few other HE PS3 compounds at different glass temperatures 114,190 , as summarized in Table 5. In addition to sulfides, selenide-based HE compounds have also been studied in Fe-Mn-Cd-In-based HEM PSe3 122 . The comparison study on  FePSe3,  Fe0.8Mn0.1Cd0.05In0.05PSe3,  Fe0.7(MnCd)0.1In0.1PSe3,  and  (FeMnCd)0.25In0.17PSe3  has revealed decreased T N with reducing Fe amount [Fig. 11(c)]. The AFM transition disappears in (FeMnCd)0.25In0.17PSe3, leaving a substantial susceptibility irreversibility around 15 K [Fig. 11(c)] that  implies  a  glass  state,  which  is  further  confirmed  by  the  frequency-dependent  peak  in AC susceptibility measurements 122 .

## 4.2.1.2. Non-isovalent substitution

## 4.2.1.2.1. CuCrP2 X 6 ( X = S or Se)

The metal substitution in M 2P2 X 6 has been extended to the mixing of monovalent M 1 1+ ( M 1 = Cu or Ag) and trivalent M 2 3+ ( M 2 = V or Cr) ions to from ( M 1 +1 )( M 2 +3 )P2 X 6 154-158,191-193 . Chemical valence is balanced by maintaining an equal amount of monovalent and trivalent ions. While these compounds have been discovered a long time ago 156,158,191,194 , there have been only a few studies on magnetic properties 155,156,158,191,194,195 . CuCrP2S6 154,155 has recently gained increased attention. In  contrast  to  the  random  distribution  of  dissimilar  metal  ions  in  isovalent  metal-substituted M 2P2 X 6 77-92 , weak repulsive coulomb interactions and substantial size difference between Cu 1+ and Cr 3+ cations 157 favor  an  alternating  arrangements  of  them  in  CuCrP2S6 154,155 :  as  shown  in  Fig. 12(a), Cr 3+ ions are located almost at the center in the vdW layer, whereas Cu+ ions are slightly

displaced from the center at the alternative positions above and below  the Cr 3+ layers 155 .  This further leads to broken inversion symmetry and ferroelectricity up to room temperature 58,59,196 .

Regarding the magnetic properties which is the focus of this review,  CuCrP2S6 displays an AFM order below T N = 32 K 155 [Fig. 12(b)]. On the other hand, CuCrP2Se6 has a slightly higher T N (= 40 K) than that of CuCrP2S6, which is likely attributed to a stronger Cr-Se-Se-Cr superexchange interaction due to enhanced covalency arising from greater atomic orbitals for Se 197 . The much sharper drop in susceptibility measured with the field along the a -axis in comparison to other field directions suggests the magnetic moment orientation along the a -axis. The linear fit of inverse susceptibility yielded a positive Curie-Weiss temperature θ cw = 24 K [Fig. 12(b)], implying inplane FM interaction that may be attributed to an A-type AFM order 155 (see Fig. 3). The effective moments of μ eff = ( 3.78 ± 0.05) μ B/f.u. for H ab // and μ eff = (3.89 ± 0.05) μ B/f.u. for H ab ⊥ 154 match with the theoretical value of 3.87 μ B for Cr 3+ . Like many other Cr-based van der Waals magnets such as CrPS4 179 , CrCl3 180 , and CrSBr 181 , as well as Cr-substitute NiPS3 mentioned above (section 4.2.1.1.6), a field-driven AFM to FM transition has been observed in magnetization measurements with a saturation moment of ≈ 3 μ B/Cr  [Fig. 12(c)]. Consistent with the easy-axis along the a -axis, an SF transition appears in magnetization with low H SF ≈ 0.4 T [Fig. 12(d)].

As mentioned above in section 4.2.1.1.4, the mono- and tri-valent of Cu  and Cr + 3+ allows for  co-substitute  other  bi-valent  ions  such  as  Ni 2+ to  form  Cu Ni2(1- )Cr P2S6  (0≤ x x x x ≤1) 182 .  This doping strategy provides further tuning of magnetism in the M X P 3 family and leads to a wide range of medium-entropy compositions.

## 4.2.1.2.2. Ag M P2 X 6 ( M = V or Cr; X = S or Se)

AgVP2S6  and  AgCrP2S6  have  been  studied  a  long  time  ago 192,193 .  Structurally,  these materials form a zig-zag chain of V 3+ ( S = 1) and Cr 3+ ( S = 3/2) ions respectively along the a -axis [Fig. 13(a)], which is distinct from other M X P 3 compounds. Long-range AFM order is absent in AgVP2S6 from 5 to 200K in susceptibility measurements 192 [Fig. 13(b)]. In contrast, AgCrP2S6 is reported to be AFM below T N ≈ 7 K 193 [Fig. 13(c)]. Such T N from susceptibility is lower than T N ≈  20  K  obtained  from  powder  neutron  diffraction  experiment 156 .  Both  compositions  display enhanced  susceptibility  at  low  temperatures,  but  AgVP2S6 192 is characterized  by  isotropic susceptibility for magnetic field directions along and perpendicular to the zig-zag chain direction [Fig. 13(a)], while AgCrP2S6 features a small anisotropy at low temperatures 193 [Fig. 13(b)].

A more recent study has expanded to selenide counterpart AgVP2Se6 198 and AgCrP2Se6 199 . These compounds are structurally slightly different from the above AgVP2S6 and AgCrP2S6 [Fig. 13(d)]. Interestingly, susceptibility irreversibility and magnetization saturation of AgVP2S6 198 [Fig. 13(e)] implies ferromagnetism with a T c ~ 18.5 K, which is distinct from the AFM ground state for other M X P 3. On the other hand, AgCrP2Se6 199 exhibits AFM ground state below T N ~ 42 K, which features field-driven moment polarization under the high field of B ~ 3-6 T. Furthermore, polarreflective  magnetic  circular  dichroism  (RMCD)  experiments on AgVP2Se6 198 found  a  growing hysteresis loop with reducing thickness in thin flakes, which persist down to 6.7 nm flake thickness with unchanged T c .

## 4.2.2. Chalcogen ( X ) substitution

As discussed in section 3, transition metal atoms M are surrounded by P2 X 6 clusters in each layer of M X P 3 (Fig. 2). So, substituting chalcogen X modifies the local environment of M 2+ ion within  honeycomb  layers  with  the  magnetic  plane  intact  [Fig.  4(b)].  Therefore,  chalcogen

substitution offers a relatively clean approach to modifying magnetic exchange interactions. This approach  has  been  demonstrated  to  be  effective  in  other  vdW  magnets  such  as  chromium halides 146,147 , in  which  the  magnetism  can  be  efficiently  controlled  by  non-magnetic  ligand substitution.  Although  the  syntheses  and  structural  characterizations  of  chalcogen-substituted M X P 3 have been reported a long time ago 200-202 , their magnetic properties were studied recently in a few Mn-, Fe-, and Ni-based M X P 3 compounds 31,32 , as described below.

## 4.2.2.1. MnPS3- Se x x

In MnPS3- Se , the successful substitution can be readily seen by the colors of the crystal. x x Upon increasing the Se content, these relatively transparent crystals gradually change color from green to wine red [Fig. 14(a)], indicating the variation of the optical gap 31 . Upon Se substitution, T N displays a monotonic, slight reduction from 78.5 K for MnPS3 to 74 K for MnPSe3 31,32 [Fig. 14(b)], which is drastically different from non-monotonic composition dependence seen in metalsubstituted MnPS3 82,86,88,90 . This is found to be caused by the suppressed exchange interaction 31 . Magnetism in MnPS3 is governed by the nearest-neighbor exchange interaction ( J 1) from the MnMn direct exchange 39,129,130 ,  and  the  third nearest-neighbor interaction ( J 3)  is  also  considerable (Table 5). Se substitution for S expands in-plane lattice 203,204 and elongates Mn-Mn distance, which attenuates the direct exchange and consequently reduces T N 31,32 .

In addition to magnetic exchange interactions, chalcogen S-Se substitution also modifies magnetic anisotropy 31 .  This  is  expected  because  the  two  end  compounds MnPS3 and MnPSe3, though both possess Néel-type AFM structure within each vdW layer where all nearest-neighbor spins are aligned antiparallel, feature different magnetic  out-of-plane 79,135 and  almost-inplane 30,87,95,96 easy axis, respectively 30,79,87,95,96,135 (Fig. 3). The  modification  of  magnetic

anisotropy is reflected by the evolution of SF transition. SF transition in MnPS3 occurs under an in-plane field. The SF field H SF is gradually suppressed to zero upon increasing Se content near x = 1 (MnPSSe2). On the other hand, the SF transition re-appears but under an out-of-plane field for x &gt; 1 samples. Since SF transition in AFM material is driven by magnetic field component along the magnetic moment direction (i.e., easy axis), this implies the rotation of easy axis from out-ofplane towards the in-plane direction with Se substitution, which can be attributed to the enhanced single-ion anisotropy upon Se substitution that usually favors the in-plane moment orientation in M X P 3. The switching of the easy axis is found to happen closer to the MnPS3 side i.e., between x = 0.7 and 1.2 [Fig. 14(c)], implying the magnetism in MnPS3 is softer than MnPSe3, which is also consistent  with  the  results  obtained  from  the  theoretical  calculations  that  reveal  much  smaller anisotropy between the in-plane and out-of-plane directions of the spins in MnPS3 than MnPSe3 31 .

## 4.2.2.2. NiPS3x Se x

The study on Ni-based NiPS3- Se  faces difficulty in synthesizing single crystals for Sex x rich compositions. Indeed, the studies on NiPSe3 are very limited 39 as  compared to the sulfide counterpart NiPS3. A recent investigation on NiPS3x Se x 31 combining single crystal with Se content up to x = 1.3 [Fig. 14(d)] and polycrystals up to x = 3 have revealed monotonic enhancement in T N with  increasing  Se  content,  from  ~155  K  for  NiPS3  to  ~210  K  for  NiPSe3  [Fig.  14(e)].  This observation is distinct from the reduced T N due to metal substitution in NiPS3 88,90 . Interestingly, compared to MnPS3- Se  in which Se substitution slightly reduces x x T N 31,32 , in NiPS3 the similar Se substitution  causes  strong T N  enhancement 31 . Such  results  have  been  ascribed  to  different governing exchanges in Mn- and Ni-based systems 31 . Magnetism of both systems are determined by the nearest J 1 and third nearest J 3 while the second nearest-neighbor interaction J 2 is negligible

(Table  4).  Unlike  MnPS3  in  which  the  direct  exchange  between  the  neighboring  metal  ions contributes  to J as  described  in  the  previous  section,  neutron  scattering  experiments 39,129 have demonstrated  that  the  magnetic  interactions  in  NiPS3  are  superexchange  in  nature.  The  direct exchange  between  Ni 2+ ,  however,  does  not  exist  due  to  the  filled t 2g  orbitals  for  Ni 2+39,129 . Therefore,  compared  to  S,  Se  with  extended  4 p -orbitals  favors  orbital  overlap  and  enhances superexchange between Ni 2+ through chalcogen, giving rise to enhanced T N.

Similar to the case of MnPS3, Se substitution also tunes SF transitions in NiPS3 31 . The SF transition under an in-plane field of ~ 6 T for NiPS3 ( x = 0) occurs at a higher in-plane field of ~8 T for x =  0.25  [Fig.  14(f)].  Further increasing Se content  up to 1.3 results in essentially linear magnetization  under  both in-plane  ( H // ab )  and  out-of-plane ( H ab ⊥ )  fields  up  to  9  T.  This  is consistent with enhanced exchange interactions with Se substitution, based on evaluating the SF field, 𝐻𝑆𝐹 ≈ √2𝐻E𝐻A where H E  and H A are effective exchange and magnetic anisotropy fields, respectively 205 . SF transition also provides a measure of magnetic anisotropy. When SF transition switches from one magnetic field direction to another, it suggests rotation of magnetic easy axis as seen in aforementioned MnPS3- Se . For NiPS3- Se , however, unavailable single crystals for x x x x Se-rich  compositions,  and  the  lack  of  experimentally  determined  magnetic  structure  for  end compound  NiPSe3,  make  it  difficult  to  judge  the  evolution  of  magnetic  anisotropy  based  on magnetization study.

## 4.2.2.3. FeP(S1x Se )3 x

In the M X P 3 family, FePS3 has been identified as a representative material that displays Ising-type magnetism characterized by out-of-plane magnetic moments (Fig. 3) 6,40,108 . Such Isingtype magnetism in FePS3 has been proposed to originate from the combination of the strong spin-

orbit coupling (SOC) of the high-spin Fe 2+ ( d 6 ) state and the trigonal distortion of FeS6 octahedra 40 . Another Fe-based M X P 3 compound FePSe3 which was discovered a few decades ago 30,101 has so far  received  surprisingly  less  attention  than  FePS3  despite  the  fact  that  both  FePS3 6,40,108 and FePSe3 30,42 exhibit similar Ising-type zig-zag AFM ordering from bulk to the monolayer limit. This is in stark contrast to the distinct magnetic structures (experimentally or theoretically determined) for  sulfide  and  selenide  compounds  in  some  other  known M X P 3  such  as  MnP(S,Se)3  and NiP(S,Se)3 31,206 . Such lack of change in magnetic structure in FeP(S,Se)3 naturally raises a question of whether chalcogen substitution may play any role in modifying magnetic properties, which has been investigated in Ref. 123 . For the entire composition range, magnetic susceptibility displays strong anisotropy both below and above T N, with the in-plane susceptibility measured under the in-plane field ( H ab // ) showing much weaker temperature dependence as compared to the out-ofplane susceptibility [Fig. 15(a)], implying the persistence of the Ising-type magnetism up on Se substitution.  In  Mn-  and  Ni-  based M X P 3, the  magnetic  anisotropy  mainly  originate  from anisotropic  superexchange  interaction  that  arises  from  SOC  of  non-magnetic  ligands 207,208 . However,  in  FeP(Se1x S )3,  magnetic  anisotropy  predominantly  stems  from  the  strong  crystal x electric  field  on  Fe 2+ ion  (discussed  in  section  4.1.) 139,140 ,  and  thus  S-Se  substitution  does  not substantially  change  magnetic  anisotropy  and  consequently  maintains  the  robust  Ising-type magnetic ordering in FeP(Se1x S )3 x 123 .

The evolution of T N with Se substitution is also interesting. Unlike Mn- and Ni-based M X P 3 in which chalcogen substitution leads to monotonic decrease or increase in T N, respectively (see sections 4.2.2.1 and 4.2.2.2), in Fe-based system, a non-monotonic dependent is observed 123 [Fig. 15(b)].  This  has  been  attributed  to  the  evolution  of  magnetic  exchange 123 :  Previous  neutron scattering measurement has revealed dominant J 1 in FePS3 108 (Table 4), which is FM in nature and

sensitive  to  Fe-Fe  distance  due  to  direct  exchange  interaction  of  the  nearest-neighbor  Fe moments 129,189 . A similar direct exchange scenario occurs for MnPS3x Se  except x J 1  is AFM in nature (see sections 4.2.2.1). With the consideration that the competition between FM and AFM correlations determines the magnetic ordering type and transition temperature, the evolution of T N can  be  understood  in  terms  of  the  nearest-neighbor  Fe-Fe  distance  that  governs  the  FM J 1  in FeP(Se1- S )3. As shown in Fig. 15(c), the nearest-neighbor Fe-Fe distance in FeP(Se1x x x S )3 first x reduces with S substitution up to x = 0.5. Further increasing S content slightly modifies the lattice structure  and  leads  to  elongated  Fe-Fe  distance.  This  causes  a  non-monotonic  composition dependence for J 1 and eventually results in non-monotonic evolution for T N.

## 4.2.3. Inter-layer intercalation

In addition to metal and chalcogen substitutions, the layered structure of M P X 3 allows for another doping strategy - inter-layer intercalation of guest ions, as shown in the schematic in Fig. 4(c). The metal and chalcogen substitutions are all based on the direct mixing of dopants and source materials during synthesis such as flux and chemical vapor transport (CVT). On the other side, the intercalation technique is usually applied to post-grown crystals, involving the insertion of guest ions into inter-layer spaces of the material. So, this method is relatively clean and does not  strongly  modify  the  host  layers.  Generally,  intercalation  to  vdW  materials  is  expected  to modulate the inter-layer spacing and may also lead to carrier doping. Therefore, compared to metal M and  chalcogen X substitutions,  intercalation  offers  a  new  approach  to  tuning  the  magnetic properties of M X P 3 materials, which may create new magnetic phenomena and novel magnetic phases in M P X 3 that are not accessible by substitution. Intercalation of Li 54,99,101,209,210 and various

organic-ions 97,98,100,102 have been reported in M X P 3, which were achieved by electrochemical 54,98100,209,210 and wet chemical 97,101,102 techniques.

## 4.2.3.1. Lithium intercalation

Lithium (Li) intercalation in M X P 3 has been reported a long time ago 54,101,209,210 . Earlier work mainly focused on the electrical, optical, and electrochemical properties of Li-intercalated M X P 3. Regarding magnetic properties, the effects of Li intercalation on NiPS3, FePS3, FePSe3, and MnPSe3 compounds were first studied four decades ago 101 .  The  intercalation  was  achieved  by reacting M X P 3-powered samples and n -butyllithium solution in hexane at room temperature in a dry, oxygen-free environment for 10 - 15 days. The duration of the reaction and concentration of n -butyllithium  was  found  to  affect  the  amount  of  intercalated  Li.  In  this  work 101 ,  resistivity reduction  in those powered  samples  implies  successful  intercalation.  However,  magnetic properties including transition temperature, effective moment, and Weiss temperature extracted from temperature-dependent magnetic susceptibility measurements do not display notable changes [Fig. 16(a)].

Recent studies adopting electrochemical interaction to intercalate Li in single crystalline samples reveal modified magnetic properties in Li NiPS3 x 99 and Li FePS3 x 211 . The intercalation in both studies was performed using a battery setup [Fig. 16(b)] and the expanded c -axis implies successful  intercalation.  For  NiPS3,  samples  with  Li  content  up  to x =  0.4  are  air-stable  and maintain good crystallinity based on x-ray diffraction and scanning electron microscope imaging, though non-magnetic Li3PS4 impurity starts to occur for x ≥ 0.3. It is worth noting that the Li amount is the nominal content calculated based on the intercalation duration and electrical current because neither x-ray diffraction nor energy dispersive x-ray spectroscopy can directly probe Li.

Similar to the earlier study using n -butyllithium solution for Li intercalation 101 , the electrochemically intercalated Li NiPS3 ( x x = 0 - 0.4) samples do not display clear changes in T N. However, the development of non-linear field dependence for magnetization, and its saturationlike behavior after removing the linear background [Fig. 16(c)], and the rise of the hysteresis loop and tiny magnetic moment  [Fig. 16(d)] have been ascribed to ferrimagnetism due to uncompensated  antiparallel  magnetic  moments 99 .  For  FePS3 211 ,  in  contrast, T N  is  found  to  be reduced with the expansion of the c-axis by Li-intercalation, suggesting a possible role of interlayer  magnetic  exchange.  The  Ising-type  magnetism  characterized  by  strong  anisotropy  in magnetic  susceptibility  in  the  high-temperature  paramagnetic  state  remains  robust.  At  low temperatures,  non-linear  field  dependence  for  magnetization  is  also  observed,  similar  to  Liintercalated NiPS3.

## 4.2.3.2. Organic-ion intercalation

The vdW gap allows for not only the intercalation of small Li atoms or ions but also the much larger organic molecules or ions 97,98,100,212,213 .  Organic  ion  intercalation  has  been  mainly performed on NiPS3 97,98,100 . Intercalating tetraheptyl ammonium (THA ) + 98 , tetrabutylammonium (TBA + ) 100 , cobaltocenium ions [Co(Cp)2 + , where Cp is a cyclopentadienyl ring C5H5 - 100 ] , and 1,10-phenanthroline 97 using  electrochemical 98,100 and  solution  reaction 97 have  been  performed. Compared to Li-intercalation, intercalating large organic ions results in a much more significant elongation of inter-layer spacing 97,98,100 . It has also been found that the intralayer lattice structure does not display remarkable change upon intercalation 97 .

Organic-ions intercalation in NiPS3  is found to drastically modify  the magnetic properties 97,98,100 , mainly giving rise to a low-temperature FIM state 98,100 that is also reported in Li-intercalated NiPS3 99 described in the previous section. The conclusion has been drawn based on the transition-like sharp susceptibility upturn around and below 100 K [Figs. 17(a) and 17(c)], as well as magnetic hysteresis loops in THA -+ 98 , TBA + 100 -, and Co(Cp)2 +100 -intercalated NiPS3 [Figs. 17(b) and 17(d)]. It has been proposed 100 that the cation intercalation causes the reduction of certain Ni from the Ni 2+ to the Ni  state, together with its displacement from the 0 O h to the T d lattice  site.  Such  transition  from  high  spin  Ni 2+ -O h atoms  ([Ar]3d s )  to  zero-spin  Ni 8 0 0 T d ([Ar]3d 10 s ) 0 leads  to uncompensated  antiferromagnetism,  i.e.  a  FIM  state.  An  alternative mechanism based on the Stoner effect has also been proposed 98 : The charge doping due to organicion intercalation enhances the density of states (DOS) at the Fermi level and eventually triggers the  inter-chain  Stoner  splitting  of  the  itinerant  electrons,  resulting  in  the  higher  electron concentration in one Ni chain to create net magnetic moment which gives rise to ferrimagnetism.

Recently, a new method using iron dopant as reaction active sites to intercalating organicion in NiPS3 has been reported 97 . In this method, light Fe-substituted NiPS3 (i.e., Fe0.02Ni0.98PS3) single crystals are synthesized, which is followed by intercalation of a complexing agent 1,10phenanthroline  by  solution  reaction  with  aniline  chloride 97 .  In  this  process,  1,10-phenthroline removes Fe 2+ ions into the solution, creating metal-ion vacancies. The aniline chloride provides a proton  to  1,10-phenthroline,  and  such  protonated  1,10-phenanthroline  is  attracted  towards  the vacant  metal  sites,  forcing  intercalation  of  1,10-phenanthroline  into  inter-layer  spacing.  The intercalated samples also display the signature of ferrimagnetism.

## 5. Engineering magnetism through pressure

In addition to chemical doping, pressure has also been established as an efficient external stimulus  to  tune  magnetic  properties.  In M X P 3,  high  pressure  has  been  found  to  effectively modulate electronic properties 64-72 . Recently, pressure has also been used to control magnetism in this material family 214-217 . A recent review article has extensively summarized the theoretical and experimental progress of the structural, electronic, magnetic, and optical properties tuning of M X P 3 under pressure 218 . In this review, we focus on engineering magnetism in M X P 3 materials. Since pressure generally tunes lattice structures and possibly induces structure transitions, it also sheds light on tuning magnetism through changing magnetic exchange and anisotropy. Therefore, here we  briefly  describe  the  pressure-driven  modification  of  magnetism  in M X P 3.  The  magnetic properties of M X P 3 are found to be sensitive to high pressure. TN systematically increases with the pressure  for  MnPS3 214,217 and  FePS3 215 ,  which  can  be  explained  by  the  enhanced  magnetic interactions under pressure. In particular, compressing the crystal planes closer strengthens the inter-layer  interaction 215,217 . For  MnPS3,  the TN also  enhances  with  applying  pressure,  with different  reported  rates  of  6.7  K/GPa 214 and  13  K/GPa 217 depending  on  the  type  of  samples (polycrystal or single crystal). In addition, SF transition is tunable by pressure. In MnPS3 217 , the SF field decreases at a rate of 4.0 × 10  Oe/GPa, which is likely due to the reduction of magnetic 3 anisotropy under pressure. Furthermore, the magnetic structure for MnPS3 remains unchanged up to ⁓3.6 GPa 214 but changes at ~2 GPa for FePS3 215 and ⁓4 GPa for NiPSe3 216 . Such changes in magnetic structures are accompanied by the insulator-to-metal transition and even superconductivity in of FePSe3 72 and NiPSe3 216 . Therefore, high pressure, as well as strain, are excellent  tools  that  can  be  combined  with  chemical  tuning  (substitution  and  intercalation)  to achieve  additional  properties,  such  as  the  combination  of  the  desired  magnetic  structure  and electrical conductivity.

## 6. Summary and perspectives

In this review article, we provide a summary covering the crystal growth, structure, and magnetic properties of the vdW-type AFM M P X 3 material family, with a focus on property tuning by various doping scenarios. Metal substitution, chalcogen substitution, and inter-layer intercalation are highly effective in tuning the magnetic properties in M X P 3, including magnetic ordering,  exchange  interactions,  magnetic  anisotropy,  etc.  Generally,  AFM  ground  states  are robust, and most of those metal and chalcogen substitution tune properties within antiferromagnetism, except for a few cases such as Fe1x Zn PS3 and AgVP2Se6 that display FMx like behaviors  such as irreversibility, hysteresis, and  saturation magnetization.  However, magnetization is not a bulk measurement as a tiny number of magnetic impurities may give rise to a strong magnetization signal. Also, quite a few FM-like signatures may originate from a spin-flip transition or a canted AFM state, as seen in AFM CuCrP2S6 and Ni1x Cr PS3. Therefore, other bulk x measurements such as neutron diffraction are needed to clarify the magnetic ground state as well as any field-induced phase transitions. Indeed, the rapid development of M X P 3 and its derivatives calls for more neutron resource allocations on these interesting vdW magnetic compounds.

On the other hand, intercalations of a few guest species have been reported to result in a FIM state at low temperatures. The differences in substitution and intercalation might be attributed to different consequences: substitution within each individual layer plays a role mainly in altering magnetic anisotropy and exchange interactions while intercalation in the inter-layer spacing might lead to carrier doping or reductive reaction for metal ions. Also, intercalation is efficient in tuning inter-layer distance, especially when intercalating large ions such as organic intercalation. This effectively reduces interlayer interaction and may push the magnetism approach to a 2D limit.

Therefore, intercalation might be a good tool to engineering magnetism for compounds in which the interlayer exchange J z is important. So far, there are not many reported intercalation studies, therefore more efforts toward this direction are needed to fully explore this promising material tuning approach. Similarly, a direct probe for magnetic ordering such as neutron diffraction is also highly desired in this direction. Another urgent need is an accurate and convenient approach to determine the amount of Li for Li-intercalated samples.

High-entropy  ( HE ) M X P 3  is  an  emerging  field  with  great  opportunities  owing  to  the expanded degrees of freedom. The combination of multiple elements in HE compounds offers greater versatility and tunability of material properties as compared to conventional bi-metallic and  bi-chalcogenide  alloys  by  varying  the  composition  of M and X elements.  Incorporating multiple  components  in  an HE compound  could  induce  a  severe  lattice  distortion  due  to  the difference in their atomic sizes, which provides opportunities for crystal structure and symmetry engineering  for  possible  novel  functional  properties.  The HE alloys  are  expected  to  generate unusual  magnetic  orderings  due  to  competing  magnetic  interactions  enabled  by  the  interplay between  spin,  charge,  and  orbital  degrees  of  freedom 219 .  On  the  other  side,  the  randomness introduced by high entropy may also quench the magnetic order and simultaneously facilitate the insulator-to-metal  transition  and  subsequent  emergence  of  superconductivity,  which  may  be extremely  challenging  but  has  been  observed  in  FePSe3-based HE compounds  under  external pressure 122 . Further exploring HE M X P 3 compounds could provide pathways to realize enhanced conductivity  and  even  superconductivity  at  an  ambient  pressure  or  much  lower  pressure. Understanding the effect of entropy on the structural stability and material properties of complex HE compounds  is  critical  for  their  optimal  design  and  utilization  in  practical  applications. However, the controlled synthesis of the alloy composition, and the large parameter space, pose

significant challenges for controlled study (e.g., fixing the content of one or more metals) to clarify the mechanism behind the property changes. More effort, especially in synthesis and applying additional experimental tools, would be beneficial.

One driving force of the study of M X P 3 is the feasibility of obtaining their atomically thin layers  that  provide  invaluable  opportunities  for  studying  new  phenomena  originating  from  2D magnetism and future  device  applications. The  tunable  magnetism  summarized  in  this  review further demonstrates the great potential of this material platform. Despite their well-established magnetic orders in bulk materials and the fact of being one of a few first demonstrated 2D magnets in the atomically thin layer form, the study of 2D magnetism in M X P 3 is still in an early stage with only a few pristine compositions being investigated, as summarized in Table 6. It has been found that the long-range magnetic orders in atomically mono- or bi-layers only exist in a few M X P 3 compounds such as MnPS3 29,110 , FePS3 6 , NiPS3 60 , CoPS3 109 , MnPSe3 43 ,  and FePSe3 42 . Whereas the 2D magnetism in substituted and intercalated M X P 3 compounds remains elusive. So far, few challenges to exploring magnetism in 2D have been identified in the M X P 3 family. First, because of the absence of net magnetization, direct probe of AFM states in 2D layers of M X P 3 is challenging by using nanoscale magnetic characterization techniques such as scanning single-spin magnetometry 220 ,  magneto-optical  Kerr  effect  microscopy 7,8 ,  polar  reflective  magnetic  circular dichroism  (RMCD) 10 ,  x-ray  magnetic  dichroism  (XMCD) 168 , and  optical  linear  dichroism (LD) 48,221 .  In  addition  to  developing  more  experimental  techniques  for  probing AFM  state  in nanoscale, inducing ferromagnetism in M X P 3 can be a shortcut for 2D magnetism study. We hope the various doping techniques summarized in this review can provide some insight into creating FM ground states for field-driven polarized FM states in these materials. Another advantage of inducing ferromagnetism is the breaking of time-reversal symmetry that may bring in other exotic

phenomena. Recent studies have predicted the non-trivial topological states in the FM phase of M X P 3 222,223 , providing a rare platform for investigating the interplay between magnetism and band topology in the 2D limit.

Although this review mainly focuses on magnetism, we wish to take this opportunity to comment on the electronic properties of M X P 3. Those materials are well-known wide band gap insulators and electronic transport measurements in bulk materials are almost impossible or only possible in  the  high-temperature  range 71,198 .  Enabling  electronic  studies  in  vdW-type  magnetic M X P 3 could be an important direction. Exploiting the coupling between magnetic and electronic properties would provide a platform for tunable electrical properties to develop quantum materials and devices with multifunctional magnetic and electronic properties. Therefore, though applying high pressure has been demonstrated to be effective 64-72 ,  further development in approaches or materials that are compatible with 2D magnetism and device integration is critical, which calls for synergistic efforts in material modeling, high-throughput calculations, synthesis, characterization, and device study.

The  vdW  structure  of M X P 3 materials  is  naturally  advantageous  for  fabricating  devices  for electronic and optoelectronic applications. However, the highly insulating nature of M X P 3 materials has somewhat hindered the rapid development of device applications. To the best of our knowledge, so far the field-effect transistors (FET) using atomically thin layers of only a few M X P 3 compounds such as NiPS3 224 and MnPS3 53  have been reported. The FET based on NiPS3 224 and MnPS3 53 thin flakes have been found to exhibit n -type and p -type semiconducting behavior with on/off ratios of ⁓ 10 -10  and ⁓ 10 -10  respectively 3 5 2 3 at  room  temperature,  with  low  charge  carrier  mobilities  of  ⁓  0.5-1  cm V 2 -1 s -1 and  8.3  ×  10 -3 cm V -1 2 s -1 respectively. On  the  other  hand,  recent  works  have  mainly  focused  on  optoelectronic  devices  such  as photodetectors 52,225-227 , phototransistors 228,229 , and  sensors 230 based  on  a  few  layers  of M X P 3 . Highperformance  and  sensitive  photodetectors  working  in  a  wide  frequency  range  from  near-infrared 227 to

ultraviolet 52 have been successfully fabricated using the thin layers of MnPS3 53 , FePS3 52,225 , MnPSe3 226 , and FePSe3 227 .  The  few  layers  NiPS3 229 and  MnPSe3 228 have  also  been  integrated  into  phototransistors  for ultrasensitive light detection. Furthermore, the MnPS3 thin flakes 230 has been demonstrated as sensors for sensitive and selective moisture sensing. Providing this progress, efficiently tuning the magnetism would possibly  lead  to  new  optoelectronic  and  photonic  applications,  especially  the  light  polarization-based applications for which magnetism can play a role. Furthermore, metalizing M X P 3 via combined chemical and strain may pave a way for electronic applications.

Finally,  more  attention  should  be  given  to  atomic  ordering  in  these  substituted  and intercalated compounds. The distribution of the dopants and possibly the associated vacancies may play  important  roles  in  mediating  properties.  The  ultimate  examples  are  well-defined  atomic orderings such as superlattice or Peierls transition, which can be relatively easily probed by highresolution structure characterization tools such as High-resolution/ Scanning transmission electron microscopy (HRTEM/STEM) and synchrotron XRD. However, chemical short-range order, which is  another  ultimate  example,  is  difficult  to  characterize  and  has  not  been  widely  studied  in crystalline solids. Such chemical short-range order is distinct from the well-known short-range order in condensed matter physics that is defined from the long-range ordering. Roughly speaking, the long-range order is based on periodic ordering with long-range correlation length, while the short-range order is normally referred to as similar ordering but with much-shortened correlation length, which usually occurs with the disturbance of the long-range order by doping or increasing the temperature to around the phase transition temperature. In contrast, chemical short-range order occurs in a doped system and characterizes the deviation of the atomic distribution from the perfect random distributions . The study started from the III-V semiconductor alloys decades ago which mainly focused on long-range order 231 , and has been recently extended to chemical short-range

order in other systems such as group-IV semiconductors 232,233 , metal alloys 234,235 , thermoelectric materials 236,237 ,  and oxides 238 . Thus far, chemical short-range order remains to be an extremely less-explored  topic  in  condensed  matter  physics,  probably  owing  to  the  lack  of  efficient experimental tools to probe it. In doped M X P 3 systems, chemical short-range order should also occur and may affect the magnetic properties. Providing rich and tunable magnetism, the doped M X P 3  compounds  provide  an  ideal  platform  for  studying  the  nature  of  the  possible  various chemical short-range orders in vdW materials and their impacts on magnetism, which is a new field awaiting exploration.

## Author contributions

R. B. and J. H. designed, wrote, and edited this manuscript.

## Conflicts of interest

The authors declare no conflict of interest.

## Acknowledgement

R. B. acknowledges the support from μ-ATOMS, an Energy Frontier Research Center funded by DOE, Office of Science, Basic Energy Sciences, under Award DE-SC0023412. J. H. acknowledges the  support  from  the  U.S.  Department  of  Energy,  Office  of  Science,  Basic  Energy  Sciences

program  under  Grant  No.  DE-SC0022006.  The  authors  are  grateful  to  T.  Li  at  GWU  for informative discussions.

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Tables Table 1: Summary of crystal growth of M X P 3 compounds.

| Materials   | Growth method    | Temperature (°C)   | Temperature (°C)   | Duration (days)   | Ref.                   |
|-------------|------------------|--------------------|--------------------|-------------------|------------------------|
|             |                  | T hot              | T cold             |                   |                        |
| VPS 3       | CVT              | 600                | 500- 350           | 7-30              | 71,107                 |
| MnPS 3      | CVT              | 780- 650           | 720- 600           | 7                 | 31,41,88,105,239       |
|             | P 2 S 5 Flux     |                    |                    |                   | 116                    |
|             |                  | 650                | -                  | 2                 |                        |
| FePS 3      | CVT              | 750- 700           | 730- 600           | 9-21              | 6,72,89,92,105,108,240 |
|             | P 2 S 5 Flux     | 650                | -                  |                   |                        |
| CoPS 3      | CVT              | 600                |                    | 3                 |                        |
|             |                  |                    | 550-               |                   | 115-117                |
|             |                  |                    | 500                | 7-8               | 109,241                |
|             | P 2 S 5 Flux     | 580                | -                  | 2                 | 115-117                |
| NiPS 3      | CVT P 2 S 5 Flux | 760- 650           | 690- 550           | 7-21              | 31,89,90,92,124        |
| ZnPS 3      | CVT              | 670 600            | - 550              | 2 7               | 116 152                |
|             | P 2 S 5 Flux     | 650                | -                  | 2                 | 116                    |
| CdPS 3      | CVT              | 630                | 600                | 5                 | 105                    |
|             | P 2 S 5 Flux     | 650                | -                  | 2                 | 116                    |
| MgPS 3      | CVT              | 670                | 550-               | 90                | 125                    |
|             | P 2 S 5 Flux     | 650                | -                  | 2                 | 116                    |
| PdPS 3      |                  | 500                | 450-               | 7                 | 125                    |
| SnPS 3      |                  | 630                | 600                | 3-5               | 105,106                |
| HgPS 3      | CVT              | 350                | 320-               | 3                 | 125                    |
|             | P 2 S 5 Flux     | 400                | -                  | 2                 | 119                    |
| PbPS 3      |                  | 650                | 620                | 3-5               | 106                    |
| CrPSe 3     |                  | 800                | 700                | 10                | 104                    |
| MnPSe 3     |                  | 650                | 600                | 7                 | 31,242                 |
| FePSe 3     |                  | 720-               | 700-               | 7-10              | 72,243                 |
|             |                  | 700                | 600                |                   |                        |
| NiPSe 3     |                  | 530                | 500-               | 90                | 125                    |
|             |                  |                    | 560                |                   |                        |
| ZnPSe 3     |                  | 370                | -                  | 10                | 244                    |
| CdPSe 3     |                  | 610                | 650-               | 30                | 125                    |
|             |                  |                    | 550                |                   |                        |

| MgPSe 3                                      |                  | 620          | 480- 690     | 90     | 125             |
|----------------------------------------------|------------------|--------------|--------------|--------|-----------------|
| HgPSe 3                                      |                  | 400          | 300          | 5      | 245             |
| PbPSe 3                                      |                  | 750          | 710          | 3-5    | 106             |
| CuCrP 2 S 6                                  |                  | 750-         | 700-         | 5-8    | 154,155         |
| CuInP 2 S 6                                  | CVT P 2 S 5 Flux | 720 800      | 680 700 -    | 7 4    | 246             |
| AgCrP 2 S 6 AgInP 2 S 6                      |                  | 650 750 750- | 690 610- 600 | 5 7-9  | 116 157 247,248 |
| Mn 1- x Fe x PS 3                            |                  | 680 730      | 700- 630     | 5      | 82              |
| Fe 1- x Ni x PS 3                            |                  | 760- 700     | 690- 600     | 9      | 89,92           |
| Ni 1- x Mn x PS 3 Mn Co PS                   | P 2 S 5 Flux     | 750- 720 540 | 670- 550 -   | 7-12 3 | 88,90,153       |
| 1- x x 3 Fe 1- x Co x PS 3 Ni 1- x Co x PS 3 | P 2 S 5 Flux     | 580 625      | - 550        | 4 21   | 118 115-117 91  |
| Ni 1- x Cr x PS 3                            |                  | 750          | 550          | 7      | 178             |
| Mn 1- x Zn x PS 3 Fe 1- x Zn x PS 3          |                  | 700- 650     | 680- 600     | 7      | 78,79,86,152    |
|                                              |                  | 700          | 650          | 15     | 94              |
| Fe 1- x Cu x PS 3 Fe 1- x Cd x PS 3          |                  | 597          | 577          | 7      | 188             |
| Mn 1- x Fe x PSe 3 (Mn,Fe,Ni,Co)PS           |                  | 750 650      | 550 -        | 7      | 123             |
| 3 (V,Mn,Fe,Ni,Co)PS 3                        |                  | 610          | -            | 18 3   | 114             |
| (Zn,Mn,Fe,Ni,Co)PS 3                         |                  | 610          | -            | 3 3    | 114             |
| (Mg,Mn,Fe,Ni,Co)PS 3                         |                  | 610          | -            |        | 114             |
|                                              |                  |              |              |        | 114             |
| (Fe,Mn,Cd,In)PSe 3                           |                  | 627          | 377          | 7      | 122             |
| Cu x Ni 2(1- x ) Cr x P 2 S 6                |                  | 750          | 550          | 7      | 182             |
|                                              |                  | 650          |              |        |                 |
| MnPS 3- x Se x                               |                  |              |              | 7      | 31,32           |
| NiPS 3- x Se x                               |                  | 750          | 600 550      | 7      | 31              |
| FePS 3- x Se x                               |                  | 750          | 550          | 7      |                 |
|                                              |                  |              |              |        | 123             |

Table 2: Crystal structures of M X P 3 compounds.

| Materials                     | Crystal structure   | Space group   | Ref.                    |
|-------------------------------|---------------------|---------------|-------------------------|
| VPS 3                         | Monoclinic          | C2/m          | 71,107                  |
| MnPS 3                        | Monoclinic          | C2/m          | 31,41,88,105,239        |
| FePS 3                        | Monoclinic          | C2/m          | 6,72,89,92,105,108,24 0 |
| CoPS 3                        | Monoclinic          | C2/m          | 109,241                 |
| NiPS 3                        | Monoclinic          | C2/m          | 31,89,90,92,124         |
| ZnPS 3                        | Monoclinic          | C2/m          | 152                     |
| CdPS 3                        | Monoclinic          | C2/m          | 105                     |
| MgPS 3                        | Monoclinic          | C2/m          | 125                     |
| PdPS 3                        | Monoclinic          | C2/m          | 125                     |
| SnPS 3                        | Monoclinic          | C2/m          | 105,106                 |
| HgPS 3                        | Triclinic           | P 1 ̅          | 125                     |
| PbPS 3                        | Monoclinic          | P 21/ c       | 106                     |
| CrPSe 3                       | Monoclinic          | C2/m          | 104                     |
| MnPSe 3                       | Rhombohedral        | R 3 ̅          | 31,242                  |
| FePSe 3                       | Rhombohedral        | R 3 ̅          | 72,243                  |
| NiPSe 3                       | Monoclinic          | C2/m          | 125                     |
| ZnPSe 3                       | Rhombohedral        | R 3 ̅          | 244                     |
| CdPSe 3                       | Rhombohedral        | R 3 ̅          | 125                     |
| MgPSe 3                       | Rhombohedral        | R 3 ̅          | 125                     |
| HgPSe 3                       | Monoclinic          | C2/m          | 245                     |
| PbPSe 3                       | Monoclinic          | P 21/ c       | 106                     |
| CuCrP 2 S 6                   | Monoclinic          | C2/ c         | 154,155                 |
| CuInP 2 S 6                   | Trigonal            | P 31𝑐 ̅        | 246                     |
| AgCrP 2 S 6                   | Monoclinic          | 𝑃 2/ 𝑎        | 157                     |
| AgInP 2 S 6                   | Trigonal            | P 31 c        | 247,248                 |
| Mn 1- x Fe x PS 3             | Monoclinic          | C2/m          | 82                      |
| Fe 1- x Ni x PS 3             | Monoclinic          | C2/m          | 89                      |
| Ni 1- x Mn x PS 3             | Monoclinic          | C2/m          | 88,90,153               |
| Mn 1- x Co x PS 3             | Monoclinic          | C2/m          | 118                     |
| Fe 1- x Co x PS 3             | Monoclinic          | C2/m          | 115-117                 |
| Ni 1- x Co x PS 3             | Monoclinic          | C2/m          | 91                      |
| Ni 1- x Cr x PS 3             | Monoclinic          | C2/m          | 178                     |
| Mn 1- x Zn x PS 3             | Monoclinic          | C2/m          | 152                     |
| Fe 1- x Zn x PS 3             | Monoclinic          | C2/m          | 94                      |
| Mn 1- x Fe x PSe 3            | Rhombohedral        | R 3 ̅          | 87                      |
| (Mn,Fe,Ni,Co)PS 3             | Monoclinic          | C2/m          | 114                     |
| (V,Mn,Fe,Ni,Co)PS 3           | Monoclinic          | C2/m          | 114                     |
| (Zn,Mn,Fe,Ni,Co)PS 3          | Monoclinic          | C2/m          | 114                     |
| (Mg,Mn,Fe,Ni,Co)PS 3          | Monoclinic          | C2/m          | 114                     |
| (Fe,Mn,Cd,In)PSe 3            | Rhombohedral        | R 3 ̅          | 122                     |
| Cu x Ni 2(1- x ) Cr x P 2 S 6 | Monoclinic          | C2/m          | 182                     |

| MnPS 3- x Se x   | Mono→Rhom   | C2/m→ R 3 ̅   |   32 |
|------------------|-------------|--------------|------|
| NiPS 3- x Se x   | Monoclinic  | C2/m         |   31 |
| FePS 3- x Se x   | Mono→Rhom   | C2/m→ R 3 ̅   |  123 |

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-bdf3c7af-320a-4c85-b3b2-0ff3974e18de.jpg)

Table 3: Orbital  occupancy  for  3 d valence  electrons  of  various  transition  metal  cations  under octahedral crystal field.

| Transition metal ions   | 3 d orbital occupancy   |
|-------------------------|-------------------------|
| V 2+ (3 d 3 )           | e g ↑ ↑ t 2g ↑ ↑ ↑      |
| V 3+ (3 d 2 )           | e g ↑ ↑ t 2g ↑ ↑ ↑      |
| Cr 2+ (3 d 4 )          | e g ↑ ↑ t 2g ↑ ↑ ↑      |
| Cr 3+ (3 d 3 )          | e g ↑ ↑ t 2g ↑ ↑ ↑      |
| Mn 2+ (3 d 5 )          | e g ↑ ↑ t 2g ↑ ↑ ↑      |
| Fe 2+ (3 d 6 )          | e g ↑ ↑ t 2g ↑↓ ↑ ↑     |
| Fe 3+ (3 d 5 )          | e g ↑ ↑ t 2g ↑ ↑ ↑      |
| Co 2+ (3 d 7 )          | e g ↑ ↑ t 2g ↑↓ ↑↓ ↑    |
| Ni 2+ (3 d 8 )          | e g ↑ ↑                 |
|                         | t 2g ↑↓ ↑↓ ↑↓           |

Table 4: Magnetic exchange and anisotropy parameters for M X P 3 materials. Here, negative and positive signs denote AFM and FM interactions, respectively. θ is defined as the angle between the z -axis and the vector that joins the metal M 2+ ion and any particular nearest-neighbor chalcogen ligand [Fig. 3(e)]. Without trigonal distortion, θ becomes 54.7 °.

| Parameters   | VPS 3 * 134   | MnPS 3 35   | FePS 3 108   | CoPS 3 130   | NiPS 3 249   | MnPSe 3 95   |
|--------------|---------------|-------------|--------------|--------------|--------------|--------------|
| S            | 3/2           | 5/2         | 2            | 3/2          | 1            | 5/2          |
| T N (K)      | 56 107        | 78          | 118          | 120          | 155          | 74           |
| J 1 (meV)    | -7.387        | -0.77(9)    | 1.46(1)      | 2.04         | 1.9(1)       | -0.45        |
| J 2 (meV)    | -0.068        | -0.07(7)    | -0.04(4)     | 0.26         | -0.1(1)      | -0.03        |
| J 3 (meV)    | -0.223        | -0.18(1)    | -0.96(5)     | -4.21        | -6.90(5)     | -0.19        |
| J c (meV)    | -             | 0.0019(2)   | -0.0073(3)   | -            | 0.32(3) 131  | -0.031(5)    |
| A (meV)      | -             | 0.0086(9)   | 2.66(8)      | 2.06         | 0.3(1)       | -            |
| θ (°)        | -             | 51.67 130   | 51.28 130    | 51.38 130    | 51.05 130    | -            |

* Theoretical study

Table 5: Summary of magnetic properties of high-entropy M X P 3 compounds.

| HE P X 3 compounds                                 | Magnetic properties                                          |   Ref. |
|----------------------------------------------------|--------------------------------------------------------------|--------|
| Mn 0.25 Fe 0.25 Co 0.25 Ni 0.27 P 1.04 S 3         | AFM ( T N = 70 K) and spin-glass ( T g1 = 35 K, T g2 = 56 K) |    114 |
| Zn 0.29 Mn 0.14 Fe 0.17 Co 0.18 Ni 0.24 PS 2.61    | spin-glass ( T g = 30 K), T kink = 120 K                     |    114 |
| Mg 0.19 Mn 0.18 Fe 0.19 Co 0.26 Ni 0.28 P 1.08 S 3 | Multikinks in MT at 8 K, 42 K, 60, and 120 K                 |    114 |
| V 0.16 Mn 0.18 Fe 0.21 Co 0.23 Ni 0.24 PS 2.62     | spin-glass ( T g = 37 K), T kink = 150 K                     |    114 |
| (FeMnCd) 0.25 In 0.17 PSe 3                        | spin-glass ( T g = 15 K)                                     |    122 |

Table 6: Summary of magnetic ordering in atomically thin layers of M X P 3 compounds.

| Compounds   | Magnetic ordering temperature (K)   | Magnetic ordering temperature (K)   | Magnetic ordering temperature (K)   | Ref.    |
|-------------|-------------------------------------|-------------------------------------|-------------------------------------|---------|
|             | Monolayer                           | Bilayer                             | Bulk                                |         |
| MnPS 3      | - *                                 | 78                                  | 78                                  | 29,110  |
| FePS 3      | 118                                 | 118                                 | 118                                 | 6       |
| NiPS 3      | - *                                 | 130                                 | 155                                 | 60      |
| CoPS 3      | 100                                 | 100                                 | 120                                 | 109,130 |
| MnPSe 3     | 40                                  | 56                                  | 74                                  | 43      |
| FePSe 3     | 98                                  | 102                                 | 111                                 | 42      |

*Magnetic order not stable in the monolayer

## Figures

FIG. 1. Crystal growth of M X P 3. (a) Schematic of chemical vapor transport (CVT) growth. Optical microscope  images  of  (b)  pristine,  (c)  metal  ( M )-,  (d)  chalcogen  ( X )-substituted M X P 3  single crystals synthesized by CVT methods. (e) Optical images of single crystals of M X P 3 compounds synthesized  by  using  the  reactive  P2S5  flux  method.  Reprinted  (adapted)  with  permission 116 . Copyright 2021, American Chemical Society.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-bd8a2614-e833-4501-9b8c-272191182dc4.jpg)

FIG. 2. Crystal structures of M X P 3. (a) The layered structure of van der Waals material M X P 3. (b) The (P2 X 6) 4-( X = S or Se) anion sublattice in each layer. Metal M is  arranged in a honeycomb lattice around the (P2 X 6) 4bipyramids. (c) MX 6 octahedron of M X P 3. Such MX 6 octahedra possesses a trigonal distortion that is characterized by the angle θ between the trigonal axis (perpendicular to the ab -plane) and the M X -bond. (d) Splitting of five 3 d orbitals of transition metal cations into three t 2g  and  two e g  levels  under  an  octahedral  crystal  field.  (e)  Schematic  of  direct  exchange interaction between magnetic ions, and superexchange interactions between two cations through anion.  (f)  Schematic  of  nearest-neighbor  ( J 1),  second  nearest-neighbor  ( J 2),  and  third  nearestneighbor ( J 3) interactions in M X P 3.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-9879ab74-93b4-4754-a0ff-c95dd6ad19df.jpg)

FIG. 3. Experimentally determined magnetic structures of various M X P 3 materials. For CuCrP2S6, the low-temperature structure is shown. Magnetic structures for (V,Co,Ni)PSe3 and CuCrP2Se6 have not been experimentally determined.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-661dcc05-7463-479d-ad0e-1f461dfeaf04.jpg)

FIG. 4. Conceptual schematic of (a) metal ( M ) substitution, (b) chalcogen ( X ) substitution, and (c)

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-492c384c-fe33-4bdb-a715-ba1ebe72d152.jpg)

Li intercalation in M X P 3.

FIG. 5. (a-b) Temperature dependence of zero-field cooled (ZFC) susceptibility with the magnetic field applied parallel to the magnetic easy axis ( c ∗ -axis) of Mn1x Fe PS3 ( x x = 0.0, 0.1, 0.2, 0.8, 0.9, 1.0). (c) Magnetic phase diagram of the Mn1x Fe PS3. SG, RSG, AF, and Para indicate a spin glass x phase, a reentrant spin glass phase, an antiferromagnetic ordered phase, and a paramagnetic phase, respectively. Reprinted (adapted) with permission 82 . Copyright 2008, Elsevier.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-b0e83bc3-7878-47a3-8b38-59ae2e8da8dc.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-bcc343f8-8376-4df5-b72e-57db3bdd1685.jpg)

XNi in

FIG.  6. (a) Temperature  dependencies  of  magnetization  divided  by  magnetic  field MH -1 for Fe2P2S6, (Fe0.7Ni0.3)2P2S6, (Fe0.5Ni0.5)2P2S6, (Fe0.3Ni0.7)2P2S6, (Fe0.1Ni0.9)2P2S6, and Ni2P2S6, measured with a field of 1 T applied along three different crystallographic directions. T N and T max denote Néel temperature and the maximum magnetization temperature. (b) Evolution of T N and T max with composition for (Fe1x Ni )2P2S6. Reprinted (adapted) with permission x 89 . Copyright 2021, American Physical Society.

FIG.  7. (a) Schematics  of  spin-flop  transition  for  MnPS3  and  NiPS3 90 .  (b-c)  Magnetic  field dependence of magnetization for Ni1- Mn PS3 under in-plane ( x x H//ab )  and  out-of-plane  ( H ab ⊥ ) magnetic  fields 90 .  Reprinted  (adapted)  with  permission 90 .  Copyright  2021, American  Physical Society. (d) Temperature dependence of magnetization for (Mn1x Ni )2P2S6 under in-plane ( x H//ab ) and  out-of-plane  ( H c // )  magnetic  fields 88 .  (e)  Evolution  of T N  and T max  with  composition  for (Mn1- Ni )2P2S6 x x 88 . (f) Doping dependence of Néel temperature ( T N), spin-flop field ( H SF), and the effective magnetic anisotropy field ( H A) of Ni1x Cr PS3 x 178 .

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-67454a6b-cdd8-4200-bac3-c5667893c0c2.jpg)

FIG.8. (a) Field-cooled (FC) magnetic susceptibility of Mn Co2x x P2S6 measured with H = 1000 Oe 118 . (b)  Magnetization  for  MnCoP2S6  at  2  K  and  150  K 118 . Reprinted  (adapted)  with permission 118 . Copyright 2022, American Chemical Society. (c) SEM images of nanosheet (NS) of  NiPS3,  Ni0.88Co0.12PS3,  Ni0.68Co0.32PS3,  and  Ni0.60Co0.40PS3 91 .  (d)  Magnetization  at  5  K  for Ni1- Co PS3 NS and single crystal samples x x 91 .

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-cbca7b5e-63c0-486d-bf5b-8fd57f574f18.jpg)

FIG. 9. (a-b) Magnetic phase diagrams for Mn Zn1x x PS3. Field dependence of phases is also shown in  (a) 86,152 .  Reprinted  (adapted)  with  permission 86 .  Copyright  1998,  IOP  Publishing.  Reprinted (adapted)  with  permission 152 . Copyright  2023,  American  Physical  Society.  (c)  Temperature dependence of magnetic susceptibilities of Fe1x Zn PS3 under an in-plane magnetic field of 1000 x Oe 94 .  (d)  Temperature  dependence  of  the  magnetic  susceptibility for Cu0.15Fe0.85PS3  measured under in-plane ( H|| plane) and out-of-plane (H ⊥ plane) field of 2000 Oe. (e) Field dependence of magnetization for Cu0.15Fe0.85PS3 at 𝑇 = 10 K 188 .

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-3938d059-300e-4309-a80b-668c181819bd.jpg)

FIG.  10. (a)  Temperature  dependencies  susceptibility  for  Fe1x Mn PSe3  measured  under  a x magnetic field of 0.1 T 123 .  (b)  Isothermal magnetization at 2 K for Fe1x Mn PSe3 under out-ofx plane ( H ab ⊥ , red) and in-plane ( H ab || , blue) magnetic fields. Insets show spin-flop transition at low fields 123 . (c-d) Magnetic phase diagrams of Mn1x Fe PSe3 obtained from (c) single crystals x 123 and (d) polycrystals 87 . Reprinted (adapted) with permission 87 . Copyright 2020, American Physical Society.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-b778f57c-4d96-43d9-b4cc-9a82f280a31c.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-2466ab03-f567-4785-babe-0112dad6a1d4.jpg)

T (K)

FIG. 11. (a-b) Magnetization of (Mn,Fe,Co,Ni)PS3 under the external magnetic field of 500 Oe along  different  directions.  The  antiferromagnetic  transition  ( T N) and  spin  glass  transition temperature  ( T g) are  indicated 114 . Reprinted  (adapted)  with  permission 114 . Copyright  2021, American Chemical Society. (c) Susceptibility ( χ )  of  pristine  FePSe3  and  (Fe,Mn,Cd,In)PS3 122 . Reprinted (adapted) with permission 122 . Copyright 2022, American Physical Society.

FIG. 12. (a) Crystal structure of CuCrP2S6. (b-c) Temperature and magnetic field dependencies of magnetic susceptibility of CuCrP2S6. (d) Spin-flop transition when the field is applied along the aaxis 155 .

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-3294df8e-cddf-4866-b8b2-2248ad6fcaf2.jpg)

FIG. 13. (a) Crystal structure of AgVP2S6 and AgCrP2S6. (b-c) Temperature dependence of the susceptibility for AgVP2S6 192 and AgCrP2S6 193 . Reprinted (adapted) with permission 192 . Copyright 1994,  Elsevier.  Reprinted  (adapted)  with  permission 193 .  Copyright  1990,  Elsevier.  (d)  Crystal structure  (top  and  side  views)  of AgVP2Se6.  (e)  Temperature  (left)  and  magnetic  field  (right) dependencies of magnetization for AgVP2Se6 198 .

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-35a8236c-6a3a-4358-960f-91f13c299d9a.jpg)

FIG. 14. (a) Images of MnPS3- Se  single crystals. Doping dependence of (b) Néel temperature x x ( T N) and (c) spin-flop (SF) field for MnPS3x Se . (d) Images of NiPS3x x Se  single crystals (0 ≤ x x ≤ 1.3).  (e)  Doping  dependence  of T N  for  NiPS3x Se .  (f)  Field  dependence  of  magnetization  of x NiPS3- Se   at x x T =  2  K 31 .  Reprinted  (adapted)  with  permission 31 .  Copyright  2022,  American Physical Society.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-5c1cdfa2-2f38-4f29-8f19-fdeec1f0717c.jpg)

FIG.  15. (a)  Temperature  dependencies  of  susceptibility  of  FeP(Se1x S )3 x measured  under  a magnetic field of 0.1 T. Doping dependence of (b) T N and (c) Fe-Fe distance for FeP(Se1x S )3 x 123 .

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-99523626-b405-40f5-8840-502b6e088be0.jpg)

FIG. 16. (a) Magnetic properties for Li MnPSe3, Li FePSe3, Li FePS3, and Li NiPS3 x x x x 101 . Reprinted (adapted)  with  permission 101 . Copyright  1979,  American  Chemical  Society.  (b)  Conceptual schematic of electrochemical intercalation process and the coin cell setup for intercalation 99 . (c) Non-linear field dependence of magnetization of Li NiPS3 at x T = 2 K after removing the linear magnetization background 99 .  (d)  Evolution of saturation moment ( µ sat ) and coercive fields ( H c ) with Li content 99 .

| composition   |           | 0,K     |            |
|---------------|-----------|---------|------------|
| FePSe,        |           |         | 118        |
| Lio FePSe,    | 4.9       |         | 118        |
| FePS,         | 5.0 (5.4) | 65 (14) | 133 (1 26) |
| FePS,         | 5.2       | 81      | 153        |
| FePS ,        | 5.1       | 92      | 135        |
| NiPS ,        | 3.9 (3.7) |         | 300 ( 254) |

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-f0a347b1-6d56-4a4b-abaf-e6e018c44393.jpg)

FIG.  17. (a)  Temperature  and  (b)  field  dependencies  of  magnetization  of  intercalated  THANiPS3 98 .  (c)  Field-cooled temperature-dependent magnetization and (d) magnetic hysteresis for NiPS3, TBA0.25NiPS3, and [Co(Cp)2]0.25NiPS3 100 .

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00809v1-figure-293ad505-dcdf-4777-b788-c4411285fe2d.jpg)
Rabindra Basnet Jin Hu
Understanding and Tuning Magnetism in van der Waals-type Metal Thiophosphates
Over the past two decades, significant progress in two-dimensional (2D)
materials has invigorated research in condensed matter and material physics in
low dimensions. While traditionally studied in three-dimensional systems,
magnetism has now been extended to the 2D realm. Recent breakthroughs in 2D
magnetism have captured substantial interest from the scientific community,
owing to the stable magnetic order achievable in atomically thin layers of the
van der Waals (vdW)-type layered magnetic materials. These advances offer an
exciting platform for investigating related phenomena in low dimensions and
hold promise for spintronic applications. Consequently, vdW magnetic materials
with tunable magnetism have attracted significant attention. Specifically,
antiferromagnetic metal thiophosphates MPX3 (M = transition metal, P =
phosphorus, X = chalcogen) have been investigated extensively. These materials
exhibit long-range magnetic orders spanning from bulk to the 2D limit. The
magnetism in MPX3 arises from localized moments associated with transition
metal ions, making it tunable via substitutions and intercalations. In this
review, we focus on such tuning by providing a comprehensive summary of various
metal- and chalcogen-substitution and intercalation studies, along with the
mechanism of magnetism modulation, and a perspective on the development of this
emergent material family.