## Resistive switching in ultra-thin La0.7Sr0.3MnO3 / SrRuO3 superlattices

- S. Narayana Jammalamadaka 1,2 , Johan Vanacken  and V. V. Moshchalkov 1 1
- 1 INPAC - Institute for Nanoscale Physics and Chemistry, K.U. Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
- 2 Magnetic Materials and Device Physics Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Hyderabad, Andhra Pradesh, PIN - 502 205, India.

Corresponding author: surya@iith.ac.in

Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved.   This challenge emerges from the coupling of low dimensional individual layers with macroscopic world.  Here we report the study of the resistive switching characteristics of a of hybrid structure made out of a superlattice with ultrathin layers of two ferromagnetic metallic oxides, La0.7Sr0.3MnO3 (LSMO) and SrRuO3 (SRO).    Bipolar  resistive switching  memory  effects  are  measured  on  these  LSMO/SRO superlattices,  and  the  observed  switching  is  explainable  by  ohmic  and  space  charge-limited conduction laws.  It is evident from the endurance characteristics that the on/off memory window of  the  cell  is  greater  than  14,  which  indicates  that this  cell  can  reliably  distinguish  the  stored information  between  high  and  low  resistance  states.    The  findings  may  pave  a  way  to  the construction of devices based on nonvolatile resistive memory effects.

Keywords: Superlattice, resistive switching, random access memory, memory effects, ultra-thin films

Reaching closely to the limitations of Silicon-based technologies, research is driven by the quest of developing smaller, faster, cheaper and more capable electronic devices . In this quest, devices 1 which  reproducibly  switch  their  resistance  state  between  a  high  resistance  state  and  a  low resistance state with respect to the voltage sweep (Resistive Random Access Memory devices, RRAM) have generated tremendous interest due to their low power consumption, high write/read speed, simple structure and high scalability characteristics 2-4 .  The resistance switching can occur in different manners, i.e. a switching is called unipolar if the switching process does not depend on the polarity of voltage and current signal . In contrast, if the switching depends on the polarity 2 it  is  called  bipolar  resistive  switching .  Several  reports  have  shown  such  resistive  switching 2 characteristics on metal oxide films 5-8 , organic films  and thin film based heterostructures 9 10 . It is however expectable that superlattice structures with few unit cells thick layers of metal oxides merge the  low dimensionality (~10 -9 m)  of  the  individual  layer  thicknesses  with  the  utility  of large  -  scale  films  that  can  be  handily  linked  to the  real  world 11 .    Hence,  one  can  establish  a unique and potentially important stable resistance switching throughout transport measurement in a metal oxide superlattice structure.

Motivated by the above,  here La0.7Sr0.3MnO3 (LSMO) / SrRuO3 (SRO) superlattices grown on SrTiO3(100)  single  crystals  are  studied  for  resistive  switching  and  endurance  characteristics. La0.7Sr0.3MnO3  (LSMO) 12 and  SrRuO3  (SRO) 13 exhibit  ferromagnetic  order  below  their  bulk Curie temperatures of 370 and 160 K, respectively. In these superlattices, the magnetically soft LSMO layers, are antiferromagnetically coupled with the magnetically hard SRO layers below 150  K,  when  all  layers  order ferromagnetically.  In  these superlattices by  changing  the magnetization  state  with  a  suitably  applied  magnetic  field,  exchange  bias  effects  have  been observed 14  -  16 .  Having superlattice structure with 30  layers of  LSMO and SRO allowed us to have more magnetic signal and hence significant exchange bias field, this may indeed allow us to control resistive switching behavior, which is of our future goal.

Keeping the above goal in mind, in this manuscript, we would like to demonstrate the resistive switching  characteristics  of  LSMO/SRO  superlattices  which  have  not  been  studied  until  now. Precisely,  in  the  present  work  we  demonstrate:  (a)  resistive  switching  characteristics  in  a LSMO/SRO  superlattice,  with  a  validation  of  these  results  presenting  various  models;  (b) endurance  characteristics  of  the  superlattice  by  changing  the  resistance  state  between  on-state and off-state.  Salient features of the present work are that a stable resistive switching is observed while sweeping the voltage and the current-voltage characteristics are well explained by space charge limited conduction (SCLC) model.  Apart from that we also present results revealing a low-voltage (0.5 - 0.7 V) switching mechanism.  Pertinent to the endurance characteristics, the on/off memory window of the cell is about 14, which indicates that this cell can be used to store information in the high- and low-resistance state.

Pulsed  laser  deposition  technique,  employing  a  KrF  excimer  laser,  was  used  to  fabricate  a superlattice of La0.7Sr0.3MnO3/SrRuO3.  Oxygen partial pressure and substrate temperature were 0.14  mbar  and  650°C,  respectively.    In  total  30  layers  of  La0.7Sr0.3MnO3  and  SrRuO3 with thicknesses of 2.3 nm and 3.3 nm, respectively, were grown on SrTiO3 (001) substrate. Details about the fabrication and the properties of such superlattices can be found in Ref. 17, 18. X-ray diffraction, atomic force microscopy, high resolution transmission electron microscope and high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) were used to  investigate  the  microstructure  of  the  superlattice 17, 18 . HAADF-STEM  micrograph  of  the La0.7Sr0.3MnO3 / SrRuO3 superlattice is shown in Figure 1. Misfit dislocations were found at the interfaces between the La0.7Sr0.3MnO3 and SrRuO3 layers.  However, the interfacial atomic layers were affected by intermixing; both A-site (La/Sr) and B-site (Mn/Ru) cations intermix in 1-2 unit cells across the interface, as marked by the rectangles in Fig 1(b). The contacts (Fig. 1(a)) to the top layer were made by the wire bonder, the distance between two planar electrodes is 1 mm. Using Keithley 2400, two probe method was employed in order to measure I - V characteristics.

All  the  measurements  were  carried  out  at  room  temperature.    Top  SRO  layer  showed  the resistance ~ K Ω .  At this point it is worth quoting about the nature of SRO layer with different superlattice structures where essentially SRO layer behaved vividly in its bulk and ultra-thinfilm form. On top of that in general an important issue on using ultrathin films of metal oxides is the significant enhancement in the resistivity, which has been clearly manifested in SRO thin films 1922 .

Before the forming process, resistive switching at low voltages is not consistently observed in LSMO/SRO  superlattice,  between  -1  V  and  +1  V.    In  order  to  make  filaments  between  the electrodes,  I  -  V  characteristics  were  measured  by  sweeping  voltage  from  0  to  20  V  with  a current compliance of 10 mA. Essentially, the electro-forming process is necessary to get a stable and  reproducible  resistive  switching  behavior  in  the  resistive  switching  devices.    Compliance current of 10 mA is used to avoid the dielectric break down of the device during the forming process  due  to  leakage  current  which  may  arise  by  the  application  of  very  high  voltages. Essentially, during  this process, current -limited electric breakdown  is  induced  in  the superlattice  and  subsequently,  conductive  ON  state  and  a  less  conductive  OFF  states  are streamlined.  Immediately after the forming process, keeping the current compliance of 10 mA, the voltage was varied in the range of -1 and 1 V.  Basically, stable switching of the voltages is observed in the low voltage limit. Starting with negative field sweep, initially the device is at low resistance state (LRS). During the voltage sweep rate, the device continued to be in the LRS up to - 0.5 V. At - 0.5 V, a sudden drop in the leakage current is evident as a consequence of the high resistance state (HRS).  This process is called as RESET switching.  Further increase in the voltage causes the device to stay at the same HRS up to - 1 V.  While in the reverse run, the device stayed at HRS up to the positive 0.7 V and above which there is a sudden increase in the leakage current as a result of change in the resistance state to LRS.  This process is called as SET process.    Above  0.7  V,  the  leakage  current  is  constant  as  a  result  of  compliance  limit.    From positive  1  V,  the  device  stayed  in  low  resistance  state  up  to  0  V.    This  kind  of  change  in resistance state from LRS - HRS - LRS is a signature of bi - polar resistive switching 23-25 .  This indeed means that in order to change the resistance state, voltage polarity needs to be changed. It is  evident  from  the  Fig.  2(a)  that  the  resistive  switching  behavior  is  quite  stable.    Above procedure was repeated for 20 times to observe the stable RS. The arrows on the figure show the sequence of the applied voltage. Fig. 2(b) shows the same graph in logarithmic plot. As soon as we  increased  the  compliance  limit  until  100  mA,  we  could  see  dielectric  breakdown  in  the device. Hence, we fixed the compliance limit to 10 mA for all the devices.

To probe the current conduction mechanism of LSMO/SRO superlattices, I - V characteristics are analyzed  with  respect  to space charge limited conduction  (SCLC)  mechanism 26, 27 . Logarithmic I - V plots for both the positive and negative regions are depicted in Fig. (3a, 3b).

Fig. 3(a) shows the log - log plot of such device.  During the positive voltage sweeping, as we mentioned,  the  device  is  at  high  resistance  state  and  changed  its  memory  state  to  LRS.    The initial region of the log - log plot is followed the linear ohmic behavior.  In contrast, the fitting results  of  HRS  are  more  complicated  and  exhibit  different  switching  mechanism.    Essentially, the  charge  transfer  mechanism  comprises  of  three  parts,  namely,  ohmic  region  ( I V ∝ ),  the Child's law region ( 2 I V ∝ ), and the steep current increase region, which is in accordance with the classical space charge limited conduction (SCLC) 26,  27 .    Fig.  3(b)  shows the  log -  log plot pertinent  to  the  negative  voltage  sweep  region.  In  the  negative  voltage  sweeping  region,  the behavior  in  LRS  is  similar  to the  positive  voltage  sweep  region,  however,  the  variation  in  the HRS  is  different.    Such  behavior  in  HRS  region  can  be  explained  by  a  model  called  weak filamentary conduction channels 28 .    According  to  this  model,  charge  transport  consists  of  two parts: weak filamentary channels current (If) and the current in bulk (Ii). In this model, when the temperature  is  below  250  K,  If  dominates  in  HRS 28 ,  however,  in  the  present  case,  since  the measurements  were  conducted  at  room  temperature,  current  in  HRS  goes  with  the  SCLC principle.  Ultimately, the conduction behaviors in both the LRS and HRS also suggest that the high  conductivity  in  on-state  device  should  be  a  confined,  filamentary  effect  rather  than  a homogenously  distributed  one,  hinting  that  the  active  region  where  the  actual  phenomena happens is much smaller than the device size.

Endurance  characteristics  of  LSMO/SRO  superlattice  memory  cell  are  shown  in  fig.  3(c). Memory window of the cell is found using the formula (ROFF-RON)/RON ≈ ROFF/RON, is nearly 14, such a huge memory margin essentially makes the device circuit capable to distinguish between the  storage  information  1  and  0.    During  the  cycling  there  exist  scattering  of  the  resistance  in

HRS, however, due to high R OFF/ R ON ratio of the present device, this kind of scattering may be admitted.  It can be seen that the memory margin keeps beyond 14 times during cycling, and the cell shows little degradation even after repeated sweep cycles. Hence, the endurance measurements essentially ensure the switching between on and off states is highly controllable, reversible and reproducible. We could switch the device for about 30 - 40 times. No electrical power is required to maintain the resistance state within the given state after the device switched on or off.

Fig. 3(d) shows the threshold voltage of SET and RESET process when the device is repeatedly switched between high resistance and low resistance states. From our observation, it is evident that  the  VSET  varies  from  0.5  to  1  V  whereas  VRESET  varies  between  -0.5  to  -0.6  V,  which indicates more variation for VSET probably due to the filamentary switching. Zeng Wang et. al, 29 reported  that  competition  between  different  filaments  paths  can  decide  the  formation  of  key conducting filaments in SET process. So it is more random than break of filaments in the reset process resulting in different variation between VRESET and VSET.

Conceivable mechanisms for the resistive switching behaviors discussed until now in LSMO/SRO superlattices can be interpreted by the conducting filament model 30, 31 .  We believe that the actual phenomenon happens in the top layer of the superlattice.  The possible mechanism could be that under a high electrical field, oxygen ions in the top layer of the superlattice (SRO) might have migrated from the lattice positions, as a result of thermal effects and such oxygen vacancies  can  be  seen  in  the  form  of  defects.  This  would  eventually  results  change  in  the stoichiometry and enhancement in the electronic conductivity of the superlattice. Aforementioned vacancies form local paths/filaments which might eventually switch the device to low resistance state.  The change of the device from low resistance state to high resistive state is possible by rupture of filament, which essentially lead the switching of a device from a LRS to a  high  resistive  state  (HRS,  or  'OFF  state')  is  labeled  as  RESET  process.    We  believe  that filaments in the present superlattice might have formed in the top layer as this device consists of planar  structure.  Finally,  superlattice  structure  with  LSMO/SRO  allowed  us  to  get  stable switching.  Schematic  of  such  phenomenon  is  shown  in  Fig.  4.  Moreover,  as  the  superlattice structure  merges  the  low  dimensionality  of  the  individual  layer  thicknesses  with  the  utility  of large - scale films, we could achieve unique and potentially important stable resistance switching throughout transport measurement.

In conclusion,  a stable bipolar resistive switching  characteristic prevails in LSMO/SRO superlattice.  Merging of a superlattice structure with the low dimensionality of individual layer allowed us to attain very stable and reproducible bipolar resistive switching characteristics. We also  ascertain  that  the  memory  window  that  is  observed  between  ON  and  OFF  state  would indeed  allow  one  to  distinguish  the  information,  which  is  a  potential  characteristic  of  present superlattice device for future data storage applications.

## Acknowledgements

SNJ would like to thank IIT Hyderabad and  K.U. Leuven Excellence  financing (INPAC), the Flemish Methusalem financing and the IAP network of the Belgian Government. SNJ would also like to thank Dr. Ionela Vrejoiu for providing the superlattice sample and Dr. Eckhard Pippel and Dr. Miryam Arrdondo from Max-Planck-Institut für Mikrostrukturphysik (MPI) - Halle for the

STEM investigation of the sample.

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## Figure captions:

Fig.  1:  (a) Schematic of device that was  made using  La0.7Sr0.3MnO3 (LSMO)/ SrRuO3 (SRO) superlattice. The superlattice consist of 30 layers of LSMO (2.3 nm) and SRO (3.3 nm) deposited on SrTiO3 (001), as shown in the schematic. (b) HAADF-STEM  micrograph  of  the La0.7Sr0.3MnO3 / SrRuO3 superlattices: the brown rectangles indicate the interfacial regions that are affected by intermixing.

Fig. 2: Bipolar resistive switching characteristics of LSMO/SRO  superlattice at room temperature (300 K) . (a) I  -  V  characteristics  indicates that the current switching  behavior  is quite stable. (b) Shows the same graph in logarithmic plot

Fig.  3: (a) Current  vs  voltage  plot  in  logarithmic  scales  of  LSMO/SRO  superlattice  during positive  voltage  sweep (b) Current  vs  voltage  plot  in  logarithmic  scales  of  LSMO/SRO superlattice device during negative voltage sweep (c) Endurance characteristics of LSMO/SRO superlattice  memory  cell.  Memory  window  of  the  cell  is  found  using  the  formula  (ROFFRON)/RON ≈ ROFF/RON,  is  nearly  14,  such  a  huge  memory  margin  essentially  make  the  device circuit to distinguish the storage information between 1 and 0 (d) Threshold voltage of SET and RESET  process  with  respect  to  the  cycle  number  when  the  device  is  repeatedly  switched between high resistance and low resistance states

Fig. 4: Schematic to explain the possible mechanism for the resistive switching in LSMO/SRO superlattices. Essentially, the filaments in the present superlattice might have formed along the surface as this device consists of planar structure.

Fig.  1:  (a) Schematic of device that was  made using  La0.7Sr0.3MnO3 (LSMO)/ SrRuO3 (SRO) superlattice. The superlattice consist of 30 layers of LSMO (2.3 nm) and SRO (3.3 nm) deposited on SrTiO3 (001), as shown in the schematic. (b) HAADF-STEM  micrograph  of  the La0.7Sr0.3MnO3 / SrRuO3 superlattices: the brown rectangles indicate the interfacial regions that are affected by intermixing.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0103v1-figure-6326df3f-2fd2-45ce-a68e-b02262593519.jpg)

Fig. 2: Bipolar resistive switching characteristics of LSMO/SRO  superlattice at room temperature (300 K) . (a) I  -  V  characteristics  indicates that the current switching  behavior  is quite stable. (b) Shows the same graph in logarithmic plot

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0103v1-figure-c1a48383-77a0-4ea3-9e3a-06ad88f7d4bd.jpg)

Fig.  3: (a) Current  vs  voltage  plot  in  logarithmic  scales  of  LSMO/SRO  superlattice  during positive  voltage  sweep (b) Current  vs  voltage  plot  in  logarithmic  scales  of  LSMO/SRO superlattice device during negative voltage sweep (c) Endurance characteristics of LSMO/SRO superlattice  memory  cell.  Memory  window  of  the  cell  is  found  using  the  formula  (ROFFRON)/RON ≈ ROFF/RON,  is  nearly  14,  such  a  huge  memory  margin  essentially  make  the  device circuit to distinguish the storage information between 1 and 0 (d) Threshold voltage of SET and RESET  process  with  respect  to  the  cycle  number  when  the  device  is  repeatedly  switched between high resistance and low resistance states

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0103v1-figure-b8b0a9ad-bbe4-4fad-a555-f4bea800c93f.jpg)

Fig. 4: Schematic to explain the possible mechanism for the resistive switching in LSMO/SRO superlattices. Essentially, the filaments in the present superlattice might have formed along the surface as this device consists of planar structure.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0103v1-figure-da400427-c31b-47e4-8bb6-3bee138b3b63.jpg)
S. Narayana Jammalamadaka Johan Vanacken V. V. Moshchalkov
Resistive switching in ultra-thin La0.7Sr0.3MnO3 / SrRuO3 superlattices
Superlattices may play an important role in next generation electronic and
spintronic devices if the key-challenge of the reading and writing data can be
solved. This challenge emerges from the coupling of low dimensional individual
layers with macroscopic world. Here we report the study of the resistive
switching characteristics of a of hybrid structure made out of a superlattice
with ultrathin layers of two ferromagnetic metallic oxides, La0.7Sr0.3MnO3
(LSMO) and SrRuO3 (SRO). Bipolar resistive switching memory effects are
measured on these LSMO/SRO superlattices, and the observed switching is
explainable by ohmic and space charge-limited conduction laws. It is evident
from the endurance characteristics that the on/off memory window of the cell is
greater than 14, which indicates that this cell can reliably distinguish the
stored information between high and low resistance states. The findings may
pave a way to the construction of devices based on nonvolatile resistive memory
effects.