## Control of resonant frequency by currents in graphene:

## Effect of Dirac field on deflection

Bumned Soodchomshom a,*

a Department of Physics, Faculty of Science, Kasetsart University Bangkok 10900, Thailand

*Corresponding author

Email address: Bumned@hotmail.com; fscibns@ku.ac.th

## Abstract

To construct  Lagrangian  based  on  plate  theory  and  tight-binding model, deflection-field coupling to Dirac fermions in graphene can be investigated. As have been known, deflection-induced strain may cause an effect on motion of electron, like a pseudo gauge field. In the work, we will investigate the effect of the Dirac field on the motion of the deflection-field in graphene derived from Lagrangian density. Due to  the  interaction  of  the  deflection-  and  Dirac-fields,  the  current-induced  surfacetension up to about  4 3 10   N/m in graphene membrane is predicted. This result may lead  to  controllable  resonant  frequency  by  currents  in  graphene.  The  high  resonant frequency  is  found  to  be  perfectly  linearly  controlled  by  both  charge  and  valley currents. Our work reveals the potential of graphene for application of nano-electromechanical device and the physics of  interaction of electron and deflection-filed  in graphene system is investigated.

Keywords: Graphene; resonator; nano-electro-mechanical device; fermions interaction

## 1. Introduction

After  the  discovery  of  graphene, a stable  monolayer of graphite [1], graphene has  become  one  of  promising  materials  for  application  of  nano-electro-mechanical devices [2-5]. Graphene has large strain sustaining [6-7] which allows it to be a good flexible  and  stretchable  nano-electronics  [8-12].  The  Young's  modulus  of  graphene was found approximately about 1 TPa [7]. Recently, both experimental [2, 13-20] and theoretical [21-26] investigations of resonant frequency mode of suspended graphene have  drawn  much  attention.  The  vibrational-bending  mode  of  graphene  due  to  its elasticity  leads to the interesting application of a  resonator [2, 15, 18, 19] and mass sensing devices [21-25]. The plate theory was first adopted to study the interaction of electron-phonon scattering in carbon nanotubes [27]. The motion of electrons under the effect of deflection and displacement fields was studied. The plate theory [27] has been  next  extensively  used  to  investigate  the  interplay  of  bending  of  graphene  and Dirac  fermionic  field  to  create  a  pseudo  gauge  field  in  graphene  [28,  29].  As  have been known, electrons in graphene feel the bending of graphene atomic structure as a pseudo  gauge  potential  [30-31].  A  gigantic  strain-induced  pseudo  magnetic  field greater than 300 Tesla in graphene nanobubble was reported experimentally [32].

One  of  the  interesting  electronic  properties  of  graphene  is  that,  honeycomb like atomic structure made up of the carbon atoms, which has two sublattics A and B in a unit cell, allows its electrons to behave like the massless relativistic particle with two valley degrees of freedoms k- and -valleys [28, 29]. The wave states in the A- and B-sublatices have been considered as equivalent to pseudo spin-up and -down states, respectively.  Under  the  influence  of  bending  (or  strain)  of  graphene,  two-valley electrons may feel the pseudo magnetic field with different signs. In previous works [28,  29],  the  investigation  was  to  focus  on  how  the  deflection  and  displacement  in graphene affect on electron field in graphene. The effect of the Dirac electron field on the bending of graphene has not been clarified.

In  this  paper,  we  would  investigate  the  effect  of  the  Dirac  field  which  is obtained  from  the  tight-binding  model  [30,  31]  on  the  bending  of  graphene.  The Lagrangian density of free bending graphene is constructed based on the plate theory [33]. The combination of the plate and tight-binding model may lead to construction of interacting Lagrangian density of bending plate and the Dirac field. We focus on the effect of Dirac field on the resonant mode of out-of-plane graphene vibration or the deflection-filed derived from the Lagrangian density. Using this methodology, we

will  show  that  the  resonant  frequency  of  graphene  vibration  may  be  controlled  by currents of the junction. The current density of the Dirac field behaves like anisotropic stress to change resonant frequency mode in a graphene-based resonator.

## 2. Lagrangian density of the interaction of Dirac- and deflection-fields

To  first  consider  geometry  of  graphene  atomic  structure  depicted  in  Fig.1(a), the x (y) direction  is  assumed to be parallel to the zigzag (armchair) direction. The deflection uz is the out-of-plane displacement of graphene. The in-plane displacements along the  x-and  y- directions are  ux  and  uy  respectively.  The  pseudo gauge potentials  A x y , A and scalar potential  created by the changes of &lt;ux, uy, uz&gt; are given respectively by [27-31]

$$A _ { x } = \frac { g _ { 2 } } { e v _ { F } } ( u _ { x x } - u _ { y y } ) \,, \, A _ { y } = - 2 \frac { g _ { 2 } } { e v _ { F } } u _ { x y } \text{ and } \phi = \frac { g _ { 1 } } { e } ( u _ { x x } + u _ { y y } ) \,,$$

$$\text{$avg$} \text{$key$} \text{$vy$} \text{$vy$} \text{$l\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\nmid\ nmid$} \\ \text{$A_{x} = \frac{g_{2} } { \text{ev} _ { F } } ( u _ { x x } - u _ { y y } ) \,, \, A _ { y } = - 2 \frac { g_{2} } { \text{ev} _ { F } } u _ { x y } \text{ and } \phi = \frac { g_{1} } { \text{e} } ( u _ { x x } + u _ { y y } ) \,, \\ \text{where} \quad \text{$u_{xx} = \frac{\partial u_{x} } { \partial x } + \frac { 1 } { 2 } \left ( \frac { \partial u _ { z } } { \partial x } \right ) ^ { 2 }, u _ { y y } = \frac { \partial u _ { y } } { \partial y } + \frac { 1 } { 2 } \left ( \frac { \partial u _ { z } } { \partial y } \right ) ^ { 2 } \\ \text{and} \quad \text{$u_{xy} = \frac{1} { 2 } \left ( \frac { \partial u _ { x } } { \partial x } + \frac { \partial u _ { y } } { \partial y } \right ) + \frac { 1 } { 2 } \frac { \partial u _ { z } } { \partial x } \frac { \partial u _ { z } } { \partial y } \,. \\ \text{and} \quad \text{$g_{1}$ and } \, g_{2}$ are the coupling constants, e is the charge of bare electron and } \, v _ { F } =$$

1 g and  g 2 are  the  coupling  constants,  e  is  the  charge  of  bare  electron  and F v = 6 10 m/s is the Fermi velocity of electron in graphene. In our focus, the effect of the in-plane displacements on the motion of Dirac electron filed is neglected. The pseudo gauge potential therefore depends only on the transverse displacement, the deflectionfield  u z  z u (x, y, t) .  By doing this, the pseudo gauge and  scalar potentials  may  be respectively given as of the forms

A

$$\mathcal { A } _ { x } = \overline { 2 \mathrm e v _ { F } } \left \lfloor \overline { \partial x } \right \rfloor \, - \left \lfloor \overline { \partial y } \right \rfloor \, \right \rfloor, \, \mathcal { A } _ { y } = - \overline { \mathrm e v _ { F } } \overline { \partial x } \overline { \partial y } \\ \quad \text{and }, \, \phi = \frac { \mathfrak { g } _ { 1 } } { 2 \mathrm e } \left ( \left ( \frac { \partial u _ { z } } { \partial x } \right ) ^ { 2 } + \left ( \frac { \partial u _ { z } } { \partial y } \right ) ^ { 2 } \right ).$$

$$\mathbf A _ { x } = \frac { g _ { 2 } } { 2 \text{ev} _ { F } } \left ( \left ( \frac { \hat { \partial } u _ { z } } { \hat { \partial } x } \right ) ^ { 2 } - \left ( \frac { \hat { \partial } u _ { z } } { \hat { \partial } y } \right ) ^ { 2 } \right ), \text{ } \mathbf A _ { y } = - \frac { g _ { 2 } } { \text{ev} _ { F } } \frac { \hat { \partial } u _ { z } } { \hat { \partial } x } \frac { \hat { \partial } u _ { z } } { \hat { \partial } y }$$

$$( 2 )$$

The  motions  of  the  valley-dependent  Dirac  field k(k ) k(k ) (x, y, t)      and  the deflection-filed, u z (x, y, t) , in graphene  may  be  described  using  the  Lagrangian density below

$$L = L _ { \text{Free-electron} } + L _ { \text{Free-deflection} } + L _ { \text{interaction} } \,.$$

In eq.(3), the Lagrangian density of the free-Dirac-field of electron in graphene may be written as

$$L _ { \text{Free-election} } = i \hbar { v } _ { \text{F} } \sum _ { \xi = k, k ^ { \prime } } \left ( \psi _ { \xi } ^ { ^ { * } } \frac { \partial } { \text{V} _ { \text{F} } \hat { \alpha } } \psi _ { \xi } + \psi _ { \xi } ^ { ^ { * } } \sigma _ { \text{x} } \frac { \hat { \alpha } \psi _ { \xi } } { \hat { \alpha } \text{x} } + \psi _ { \xi } ^ { ^ { * } } \sigma _ { \text{y} } \frac { \hat { \alpha } \psi _ { \xi } } { \hat { \alpha } \text{y} } \right ) \,,$$

where k  and  k    and x,y  are Pauli matrices acting on the lattice pseudo spin wave states. Based on the plate theory [33], the Lagrangian density of the free deflection field or the out-of-plane displacement may be given as

$$L _ { \text{Free-deflection} } = \frac { \rho _ { \Lambda } } { 2 } \left ( \frac { \partial u _ { z } } { \partial t } \right ) ^ { 2 } - \frac { \kappa } { 2 } \left ( \nabla ^ { 2 } u _ { z } \right ) ^ { 2 },$$

where 7 2 A 7.6 10 kg / m     is the  mass  density  of  graphene  per  unit  area  and 2 2 2 2 2 / x / y  is the two-dimensional Laplacian. The plate bending stiffness      is  defined as 3 2 Yh / 12(1 ) ,  where  Y , h and     are  the  Young's  modulus, the thickness  and  the  Poisson's  ratio  of  graphene,  respectively.  Based  on  tight-biding theory [30, 31], the valley-dependent interaction between the Dirac- and deflectionfields may be written as

$$L _ { \text{interaction} } = e v _ { F } \sum _ { \xi = k, k ^ { \prime } } \left ( - \psi _ { \xi } ^ { * } ( \frac { \phi } { v _ { F } } ) \psi _ { \xi } + \eta _ { \xi } \psi _ { \xi } ^ { * } \sigma _ { x } A _ { x } \psi _ { \xi } + \eta _ { \xi } \psi _ { \xi } ^ { * } \sigma _ { y } A _ { y } \psi _ { \xi } \right ),$$

where k k 1. Here,  A         x,y and  in eq.(6) are based on formulae in eq.(2).

## 3. Motion of the deflection-field under the influence of the Dirac field

The action of the system is defined as S dxdydt . The equations of motions L   for electron and the deflection may be calculated via the variation of the action

$$\delta S = 0 \,.$$

As we have seen in  eqs.(3-6) that the Lagrangian density contains derivatives with respect to x and y higher than the first, such problem has been referred to as "Jerky mechanics"  [34].  Hence,  the  corresponding  Euler-Lagrange  equations  for  electronfield   and the deflection -field  u z may be respectively given as

$$\sum _ { i = 1 } ^ { 3 } \left \{ \frac { \partial } { \partial x _ { i } } \left ( \frac { \partial L } { \partial \left ( \partial \psi _ { \xi } ^ { ^ { * } } / \partial x _ { i } \right ) } \right ) - \frac { \partial ^ { 2 } } { \partial x _ { i } ^ { 2 } } \left ( \frac { \partial L } { \partial \left ( \partial ^ { 2 } \psi _ { \xi } ^ { ^ { * } } / \partial x _ { i } ^ { 2 } \right ) } \right ) \right \} = \frac { \partial L } { \partial \psi _ { \xi } ^ { ^ { * } } } \\.$$

and

$$\sum _ { i = 1 } ^ { 3 } \left \{ \frac { \partial } { \partial x _ { i } } \left ( \frac { \partial L } { \partial ( \partial u _ { z } / \partial x _ { i } ) } \right ) - \frac { \partial ^ { 2 } } { \partial x _ { i } ^ { 2 } } \left ( \frac { \partial L } { \partial \left ( \partial ^ { 2 } u _ { z } / \partial x _ { i } ^ { 2 } \right ) } \right ) \right \} = \frac { \partial L } { \partial u _ { z } } \,, \\.$$

where  x 1 x ,  x  2 yand  x  3 t . 

From  eq.(8),  we  get  equations  of  motion  for  electron  filed   for k, k    -valleys of the forms

$$i \hbar { \frac { \partial \Psi _ { \xi } } { \partial t } } = \left \{ \nu _ { _ { F } } [ - i \hbar { \frac { \partial } { \partial x } } - \eta _ { _ { \xi } } e A _ { _ { x } } ] \sigma _ { _ { x } } + \nu _ { _ { F } } [ - i \hbar { \frac { \partial } { \partial y } } - \eta _ { _ { \xi } } e A _ { _ { y } } ] \sigma _ { _ { y } } + e \phi \right \} \Psi _ { _ { \xi } } \,.$$

This equation is known as Dirac equation under pseudo gauge and scalar potentials when graphene is under strain filed induced by the deflection [31]. The electrons in kand  k  -valleys feel opposite pseudo gauge potential but the same for scalar potential [27,  31].    In  case  of  the  equation  of  motion  for  the  deflection-filed  which  may  be derived from eq.(9), we get

$$\rho _ { \Lambda } \, \frac { \partial ^ { 2 } \bar { u } _ { z } } { \partial t ^ { 2 } } + \kappa \nabla ^ { 4 } \bar { u } _ { z } = T _ { \text{xx} } \, \frac { \partial ^ { 2 } \bar { u } _ { z } } { \partial x ^ { 2 } } + T _ { y y } \, \frac { \partial ^ { 2 } \bar { u } _ { z } } { \partial y ^ { 2 } } + T _ { x y } \, \frac { \partial ^ { 2 } \bar { u } _ { z } } { \partial x \bar { c } y } + T _ { y x } \, \frac { \partial ^ { 2 } \bar { u } _ { z } } { \partial y \bar { c } x } \,,$$

where, here, the wave function of electron is assumed to be plane wave state, leading

$$\text{to that } \frac { \partial \psi _ { \xi } ^ { ^ { * } } \psi _ { \xi } } { \partial x ( y ) } = \frac { \partial \psi _ { \xi } ^ { ^ { * } } \sigma _ { x } \psi _ { \xi } } { \partial x ( y ) } = \frac { \partial \psi _ { \xi } ^ { ^ { * } } \sigma _ { y } \psi _ { \xi } } { \partial x ( y ) } = 0 \,. \, \text{We thus get}$$

,

$$& T _ { x x } = g _ { 1 } \left ( \psi _ { k } ^ { ^ { * } } \psi _ { k ^ { ^ { * } } } + \psi _ { k } ^ { ^ { * } } \psi _ { k } \right ) + g _ { 2 } \left ( \psi _ { k } ^ { ^ { * } } \sigma _ { x } \psi _ { k } - \psi _ { k } ^ { ^ { * } } \sigma _ { x } \psi _ { k ^ { ^ { \prime } } } \right ), \\ & T _ { y y } = g _ { 1 } \left ( \psi _ { k } ^ { ^ { * } } \psi _ { k ^ { ^ { * } } } + \psi _ { k } ^ { ^ { * } } \psi _ { k } \right ) - g _ { 2 } \left ( \psi _ { k } ^ { ^ { * } } \sigma _ { x } \psi _ { k } - \psi _ { k ^ { ^ { * } } } \sigma _ { x } \psi _ { k ^ { ^ { \prime } } } \right ), \\ \text{and} \quad & T _ { x y } = T _ { y x } = g _ { 2 } \left ( \psi _ { k } ^ { ^ { * } } \sigma _ { y } \psi _ { k ^ { ^ { * } } } - \psi _ { k } ^ { ^ { * } } \sigma _ { y } \psi _ { k } \right ).$$

Interestingly,  as  seen  in  eqs.(11)  and  (12),  it  can  be  considered  that the  Dirac electron  fields  may  cause  the  stress-tensor   into  graphene  membrane  (case  of T  =constant with   , x, y    ), given as

$$\tau _ { \mu \nu } = \frac { 1 } { h } \begin{bmatrix} T _ { x x } & T _ { x y } \\ T _ { y x } & T _ { y y } \end{bmatrix},$$

into graphene membrane as an external anisotropic source f source of the form

f

$$f _ { \text{source} } = T _ { \text{xx} } \frac { \partial ^ { 2 } u _ { z } } { \partial x ^ { 2 } } + T _ { y y } \frac { \partial ^ { 2 } u _ { z } } { \partial y ^ { 2 } } + T _ { \text{xy} } \frac { \partial ^ { 2 } u _ { z } } { \partial x \partial y } + T _ { y x } \frac { \partial ^ { 2 } u _ { z } } { \partial y \partial x } \,. \quad \quad ( 1 4 )$$

The  source  term  mimics  the  behavior  of  anisotropic  membrane  vibration.  The  free out-of-plane vibration of thin plate is, for  f source  0, given in the form [33]

$$\rho _ { _ { A } } \, \frac { \partial ^ { 2 } \mathbf u _ { z } } { \partial \mathbf t ^ { 2 } } + \kappa \nabla ^ { 4 } \mathbf u _ { z } = 0$$

This result may give rise to the control of vibration mode in graphene by electronic property  which  may  be  very  important  for  application  of  nano-electro-mechanical device. The mechanical vibration property may be controlled by electronic filed.

## 4. Current density dependence of graphene vibration

The  wave  function  of  electron  in  graphene   is two-dimensional-pseudo spinor  field.  The  valley-current  density J   of  electrons  obeying  two-dimensionalDirac equation given  in  eq.(10)  may  be  determined  through the  standard  continuity condition

$$\vec { \nabla }. \vec { J } _ { \xi } = - \frac { \partial \rho _ { e, \xi } } { \partial t } \,,$$

where  J * * F x y ev ˆ ˆ i j h                  and * e, e h        is valley-charge-density. The valley-current density in the x(y) direction is

J

$$J _ { x ( y ), \xi } = \frac { e v _ { F } } { h } \Psi _ { \xi } ^ { * } \sigma _ { x ( y ) } \Psi _ { \xi } \,.$$

The norm of the total valley-current-density may be obtained using the formula

$$| \vec { J } _ { \xi } | = \sqrt { \left ( \frac { \text{ev} _ { F } } { h } \Psi _ { \xi } ^ { ^ { * } } \sigma _ { x } \Psi _ { \xi } \right ) ^ { 2 } + \left ( \frac { \text{ev} _ { F } } { h } \Psi _ { \xi } ^ { ^ { * } } \sigma _ { y } \Psi _ { \xi } \right ) ^ { 2 } } } = \frac { \text{e} \sqrt { 2 } \nu _ { F } } { h } \Psi _ { \xi } ^ { ^ { * } } \Psi _ { \xi } = J _ { \xi }.$$

By substituting eqs.(17) and (18) into eq.(12), we get

T

$$T _ { x x } = \tilde { g } _ { 1 } \left ( J _ { k } + J _ { k ^ { \prime } } \right ) + \tilde { g } _ { 2 } \left ( J _ { x, k } - J _ { x, k ^ { \prime } } \right ),$$

,

T

$$T _ { y y } = \tilde { g } _ { 1 } \left ( J _ { k } + J _ { k ^ { \prime } } \right ) - \tilde { g } _ { 2 } \left ( J _ { x, k } - J _ { x, k ^ { \prime } } \right ),$$

$$\text{and} \quad T _ { x y } = T _ { y x } = \tilde { g } _ { 2 } \left ( J _ { y, k ^ { \prime } } - J _ { y, k } \right ),$$

$$\text{where } \tilde { g } _ { 1 } = \frac { \text{hg} _ { 1 } } { \text{ev} _ { F } \sqrt { 2 } } \text{ and } \tilde { g } _ { 2 } = \frac { \text{hg} _ { 2 } } { \text{ev} _ { F } } \,.$$

$$\text{where } \tilde { g } _ { 1 } = \frac { \text{hg} _ { 1 } } { \text{ev} _ { F } \sqrt { 2 } } \text{ and } \tilde { g } _ { 2 } = \frac { \text{hg} _ { 2 } } { \text{ev} _ { F } }.$$

The total current density may be defined as of the formJ k k J J    , since the current of the junction is carried by the two groups, k- and  k  -currents. In Eq.(19), it is also shown that the vibration of graphene may be directly influenced by the current of the junction.  This  result  should be  significant for application  of  current-controlled resonant frequency in a graphene-based resonator.

## 5.  Possible  current-controlled  resonant  frequency  in  graphene-based  electronic junction

In this section, the electronic  model  in  Fig.1(b) to study the current-controlled vibration is theoretically investigated. Suspended graphene sheet with length 'L' and width 'W' is modeled as a doubly-clapped beam. The current density J is assumed to flow in the x-direction. In our limit, we assume that there is no vibration mode along the y-direction.  Hence,  the  deflection-filed may  depend  only  on  x  and  t,  ie., z u (x)T(t) . The graphene plate, therefore, can be considered as a doubly-clapped  

beam. The current density is flow only in the x-direction then  J x,k k J  and  J x,k k J    . The motion of the deflection-field in graphene-based doubly-clamped beam may be described by reducing eq.(11) where we take 2 2 2 z z z 2 u u u 0. The equation x y y x y           

of motion for the deflection is thus given by

$$\rho _ { \Lambda } \frac { \partial ^ { 2 } \mathfrak { u } _ { z } } { \partial t ^ { 2 } } + \kappa \frac { \partial ^ { 4 } \mathfrak { u } _ { z } } { \partial x ^ { 4 } } - \left ( T _ { \text{current} } + T _ { \circ } \right ) \frac { \partial ^ { 2 } \mathfrak { u } _ { z } } { \partial x ^ { 2 } } = 0 \,,$$

where    xx current 1 2 valley T T g g p J      is current-induced surface tension with   valley k k p J J / J   being  valley  polarization  of  the  junction.  We  note  that  To  is  a    possible added-initial surface tension, due to fabricating junction. As a result above, our  theory  shows  that  the  vibration  mode  of  suspended  graphene  in  our  electronic junction may be described using eq.(20). The deflection  u z has been predicted that it can be controlled by the biased current 'J', because  T current depends directly on biased current passing through suspended graphene. Hence, varying current of the junction would change the resonant frequency of a graphene vibrator, modeled in Fig.1(b). The calculation of current dependence of resonant frequency will be next studied.

The solution to eq.(20) may be calculated by assuming the solution of the form i t z u (x)e     where  f / 2    is  vibration  frequency.  Hence,  the  time-independent solution can be written as

$$\chi ( x ) = c _ { 1 } \sin \left ( \Omega _ { - } x \right ) + c _ { 2 } \cos \left ( \Omega _ { - } x \right ) + c _ { 3 } \sinh \left ( \Omega _ { + } x \right ) + c _ { 4 } \cosh \left ( \Omega _ { + } x \right ),$$

where

$$\text{where} \quad \Omega _ { \pm } = \left [ \sqrt { \left ( T _ { \text{current} } + T _ { 0 } \right ) ^ { 2 } + 4 \kappa \rho _ { \Lambda } \omega ^ { 2 } } \pm \left ( T _ { \text{current} } + T _ { 0 } \right ) \right ] ^ { 1 / 2 } / \sqrt { 2 \kappa } \text{ and } c _ { 1, 2, 3, 4 } \quad \text{ are}$$

amplitude coefficients. The boundary conditions for doubly-clamped beam (vanishing of force and moment) is usually given as

$$\chi ( 0 ) = \frac { \partial \chi ( \mathbf x ) } { \partial \mathbf x } \Big | _ { \mathbf x = 0 } = 0 \text{ and } \chi ( L ) = \frac { \partial \chi ( \mathbf x ) } { \partial \mathbf x } \Big | _ { \mathbf x = L } = 0 \,.$$

By matching the time-independent solution with the boundary condition, the resonant frequency may be calculated via a non-zero solution condition to get

$$\left [ \Omega _ { + } \sin ( \Omega _ { - } L ) - \Omega _ { - } \sinh ( \Omega _ { + } L ) \right ] \left [ \Omega _ { - } \sin ( \Omega _ { - } L ) + \Omega _ { + } \sinh ( \Omega _ { + } L ) \right ] + \\ \Omega _ { + } \Omega _ { - } \left [ \cos ( \Omega _ { - } L ) - \cosh ( \Omega _ { + } L ) \right ] ^ { 2 } = 0 \,. \\ \quad \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \,.$$

In  numerical  calculation  of  current  density  dependence  of  resonant  frequency, the  thickness  of  graphene  h o 3.35 A   is  approximated  [35].  The  elastic  constants,  Young's modulus  Y 1Tpa [7], Poisson ratio  0.17  [35] may give rise to the plate   bending  stiffness  of  about 20 eV.  The  coupling  constants  of  interaction  of   electron- and deflection-fields are set to be of about  g 1 16eV [27] and  g  2 2.3 eV  [29]  at  the  temperature  300  K.  By  using  the  above  constants,  the  current-induced surface tension may be obtained as

T

$$T _ { \text{current} } = \left ( 5. 4 \times 1 0 ^ { - 1 5 } + 0. 8 \times 1 0 ^ { - 1 5 } p _ { \text{valley} } \right ) \times J \ ( N / m ). \quad ( 2 4 )$$

Since  the  magnitude  of  breakdown  current  density  J 12 break 10  2 A/ m   in  graphene was adopted from the experimental report in ref.[36], this breakdown current density would lead to the maximum current-induced surface tension for no valley-polarized current  ( p valley 0)  of  about  T  3 Max current 3.8 10     N/m.  The  possible  magnitude  of current density in graphene junction studied in this work is assumed below Jbreak.

In  our  calculation,  we  set  the studied  junction with zero initial surface tension 0 T 0 .  The  contour  plot  of  resonant  frequency  "f"  versus  the  current  density  "J"  calculated  using  eq.(23)  is  first  studied  in  Figs.2(a)  and  2(b).  Interestingly,  the resonant frequency is found to be perfectly linearly controlled by the current density for  which  the  length  of  the  suspended  graphene  is  small.  In  the  regime  of  high frequency  for  case  of  L 100 nm,  it  is  found  that  the  fundamental  frequency  (n=1)  perfectly linearly depends on J, varying from  f min 730 MHz to  f  max 830 MHz . In  Figs.3(a) and 3(b), it is also shown that the resonant frequency may depend perfectly linearly  on  the  valley-polarization  despite  large  L.  The  effect  of  current  density  on fundamental  frequency  increases  strongly  as  L  decreases.  The  predicted  linear response of resonant frequency under varying currents in graphene may be applicable

for  graphene-based resonator devices  in which  its resonant  frequency  is  tunable  by electric current.

## 6. Summary

We  have  investigated the interaction of electron or Dirac-field and the deflection-field in graphene based on the Lagrangian density constructed using plate and  tight-binding  theories.  It  was  found  that  the  current  density  of  electron  filed behaves like an external anisotropic source term. Current-induced surface tension in graphene membrane has been predicted. The application of our result was to shown a possible  perfect  linear  control  of  resonant  frequency  in  graphene-based  resonator using the charge current and valley polarization. Our work has revealed the effect of current density of Dirac field on the vibration of graphene and showed the possible application for nano-electro-mechanical devices using graphene-based material.

## Acknowledgments

This  work  was  supported  by  Kasetsart  University  Research  and  Development Institute (KURDI) and Thailand Research Fund (TRF) under Grant. No.TRG5780274.

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## Figure captions

Figure  1 Schematic  illustrations  of  (a)  graphene  atomic  structure  with  two  sublattices A and B in a unit cell and (b) a doubly-clamped beam model using suspended graphene  with  length  L  and  width  W . The  x(y)  direction  is  parallel  to  the  zigzag (armchair) direction. The current density J is assumed to flow only in the x-direction.

Figure  2 Contour  plot  of  the  resonant  frequency  versus  the  current  density  of the junction (a)  L 1000 nm(b) L  100 nm. In this case, it is assumed to have no valley- polarization and no initial surface tension across the junction.

Figure  3 Contour  plot  of  resonant  frequency  versus  the  valley-polarization  of the junction  for  (a)  L 1000 nm(b) L  100 nm. In  this  case,  it  is  assumed  to  have  no  initial surface tension across the junction.

(b)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0496v3-figure-7d3bad7f-7b90-4bf5-8bad-aced01298c62.jpg)

Figure 1

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0496v3-figure-f150640a-0cf4-4489-871e-f6404a812903.jpg)

Figure 2

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0496v3-figure-dc91e74b-96e7-40e0-b28f-f20e7ae526f6.jpg)

Figure 3

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0496v3-figure-897ec83e-b43a-4291-911a-fdaa278d79d3.jpg)
Bumned Soodchomshom
Control of resonant frequency by currents in graphene: Effect of Dirac field on deflection
To construct Lagrangian based on plate theory and tight-binding model,
deflection-field coupling to Dirac fermions in graphene can be investigated. As
have been known, deflection-induced strain may cause an effect on the motion of
the electron, like a pseudo gauge field. In the present work, we will
investigate the effect of the Dirac field on the motion of the deflection-field
in graphene derived from Lagrangian density. Due to the interaction of the
deflection- and Dirac-fields, the current-induced surface-tension up to about
N/m in graphene membrane is predicted. This result may lead to controllable
resonant frequency by currents in graphene. The high resonant frequency is
found to be perfectly linearly controlled by both charge and valley currents.
Our work reveals the potential of graphene for application of
nano-electro-mechanical device and the physics of interaction of electron and
deflection-filed in graphene system is investigated.