## Microwave resonator-enabled broadband on-chip electro-optic frequency comb generation

Zhaoxi Chen 1,†,* , Yiwen Zhang 1,† , Hanke Feng 1 , Yuansong Zeng 1 , Ke Zhang 1 , and Cheng Wang 1,2,* 1 Department of Electrical Engineering, City University of Hong Kong, Kowloon, Hong Kong, China

2 State  Key  Laboratory  of  Terahertz  and  Millimeter  Waves,  City  University  of  Hong  Kong, Kowloon, Hong Kong, China

- *zxchen4@cityu.edu.hk
- *cwang257@cityu.edu.hk
- † These authors contributed equally to this work.

## Abstract

Optical  frequency  combs  play  a  crucial  role  in  optical  communications,  time-frequency metrology,  precise  ranging,  and  sensing.  Among  various  generation  schemes,  resonant electro-optic combs are particularly attractive for its excellent stability, flexibility and broad bandwidths. In this approach, an optical pump undergoes multiple electro-optic modulation processes in a highQ optical resonator, resulting in cascaded spectral sidebands. However, most resonant electro-optic combs to date make use of lumped-capacitor electrodes with relatively inefficient utilization of the input electrical power. This design also  reflect s  most electrical power back to the driving circuits and necessitates costly RF isolators in between, presenting  substantial  challenges  in  practical  applications.  To  address  these  issues,  we present an RF circuit friendly electro-optic frequency comb generator incorporated with onchip coplanar microwave resonator electrodes, based on a thinfilm lithium niobate platform . Our design achieves more than three times electrical power reduction with minimal reflection at the designed comb repetition rate of ~ 25 GHz. We experimentally demonstrate broadband electro-optic  frequency  comb  generation  with  a  comb  span  of  &gt;85  nm  at  a  moderate electrical driving power of 740 mW (28.7 dBm). Our powerefficient and isolator -free electrooptic  comb  source  could  offer compact,  low-cost  and  simple-to-design  solution  for applications in spectroscopy, high-precise metrology, optical communications.

## Introduction

Optical frequency comb (OFC) generators play crucial roles in various applications, including optical communications [1-3], spectroscopy [4, 5], timekeeping [6], precise ranging [7, 8], and exoplanet  detections  [9],  by  providing  excellent  light  sources  with  coherent  and  equally spaced spectral lines. Recent progress in photonic integrated circuits has paved the way for on-chip comb sources, with significantly improved compactness, efficiency, and scalability [10-13].  Integrated  OFCs  have  been  achieved  based  on  various  physical  principles  and material platforms, including mode-locked semiconductor lasers (e.g. in GaAs [14], and InAs [15]), optical Kerr nonlinearity (e.g. in SiN [16, 17], AlN [18], and AlGaAs [19]), and electrooptic (EO) modulation (e.g. in LN [20-23] and Si [24] ).

Among these schemes, electro-optic frequency combs are particularly attractive for its GHz repetition rates, broad tunability, and intrinsic mutual coherence [25, 26]. An EO frequency comb is generated by modulating a continuous-wave laser signal through one or multiple phase and amplitude EO modulators. This modulation process translates the input laser's single frequency into a comb of equally spaced frequency lines. Traditionally, this is often achieved using off -the-shelf modulators based on lithium niobate (LiNbO3, LN), a material well known for its excellent optical properties and significant χ (2) nonlinearity [27, 28]. In recent years,  the  rapidly  emerging  thinfilm LN  (TFLN)  platform, with  tightly  confined  optical waveguides  and  substantially  enhanced  EO  modulation  efficiency [29-33],  has  further enabled  integrated  EO  combs  with  much  higher  integration  level  and  wider  comb  span compared  with  their  bulk  counterparts  [34,  35].  In  particular,  resonant  EO  combs  that leverage optical resonators with ultrahigh quality ( Q ) factors have achieved remarkable comb span, since the optical pump can be circulated and modulated for dozens of round trips. For example, over 80 nm wide EO comb has been achieved in a TFLN optical resonator with a Q factor  of  1.5×10   [22].  Further  adopting  a  dual-resonator  design  has  pushed  the  optical 6 conversion efficiency to 30% with a n even wider comb span of 132 nm in wavelength [36].

To date, however, most on-chip resonant EO comb generators make use of a ground-signalground  (GSG)  capacitive  electrode  for  applying  the  EO  modulation  signals  (Fig.  1a).  This electrode configuration  is essentially  a  lumped-capacitor  load  from  the  driving  circuit perspective,  where  the  input  electrical  power  is almost  fully  reflected  and not efficiently utilized. As a result, several watts of electrical driving power are often required for broadband EO comb generation (e.g. 2.2 W in Ref. [36] and 1 W in Ref. [37]). Moreover, the high reflected electrical power could be detrimental to the driving RF circuit, necessitating bulky and costly isolators or  circulators  to  prevent  power  reflection to the  electrical  amplifier [Fig.  1(a)].  In short,  the  lumped  capacitor  electrode  design  has  become  a  major  hurdle  in  terms  of complexity, cost, and power consumption to the practical application of integrated resonant EO combs.

To address these issues, we propose and demonstrate an on-chip coplanar waveguide (CPW) microwave resonator electrode for efficient and RF -circuit friendly driving of EO frequency combs. Compared with a conventional lumped-capacitor electrode, our device features a 3.6 times  electrical  field  enhancement ,  which  translates  into  more  than  3  times  reduction  in power consumption with negligible electrical power reflection ( -50 dB). Leveraging a 4-inch wafer-scale TFLN platform, we experimentally demonstrate broadband powerefficient EO frequency comb generation with a repetition rate of 25.6 GHz and a comb span exceeding 85 nm. Importantly, this is achieved using an optical racetrack resonator with a moderate QL = 8.5  ×10 5 ,  at  a  relatively  low  electrical  driving  power  of  28.7  dBm,  and  without  the  use  of electrical isolators or circulators. The design and analytical model can be readily extended to other frequencies, supporting powerefficient EO comb generation with a wide range of target repetition rates.

(a)

Signal source

50Ω load

Circulator

(b)

ω

ω

Traditional Lumped-Capacitor Electrodes

CPW Resonator Electrodes

Fig.1 Working principle of the microwave resonator-enabled broadband EO comb generation process.

![Image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00459v1-figure-20da61f1-c60a-4cae-944e-382baeb891e2.jpg)

(a-b) Schematic comparison of EO comb generators with traditional lumped capacitor design (a), where a circulator and an external 50Ω load are needed to prevent electrical power reflect ion to the driving circuit, and the proposed λ /4 microwave resonator design (b). The microwave resonator serves both electrical field enhancement and prevention of electrical power reflection. (c) Schematic illustration of the electrical field distribution and phase-matching condition in the microwave resonator enhanced EO comb generator. Green pulses  indicate  the  optical  signal  locations at  different  time t0 , t0+ τ/ 4 ,  and t0+ τ/2 .  Red  arrows  indicate electrical  field distributions  in  the  two  gaps  of  the  coplanar  microwave  resonator  at t0 ,  which  would  be reversed at t0+ τ/2 .

## Design of coplanar waveguide resonator electrode

Figure 1c illustrates the working principle of the proposed EO comb generator, consisting of an optical racetrack resonator fabricated in TFLN, integrated with CPW resonator electrodes. High-speed modulating electrical signal is applied to the input GSG microelectrodes, which is capacitively coupled into the coplanar waveguide resonator by an interdigitated electrode (IDE). The coplanar waveguide resonator consists of a GSG transmission line with a length equal to a quarter wavelength ( /4) and shorted terminals on the opposite end, forming a λ quarter-wave resonator. When the applied microwave signal is near resonance frequency, the electrical field is significantly enhanced at the coupling (open) port, while the shorted end exhibits zero voltage (but finite current flow) , following a sinusoidal λ /4 standing-wave pattern along  the  transmission  line  (Fig.  1c).  Through  precise  engineering  of  the  IDE  to  achieve impedance  matching  between  the  microwave  resonator  and  the  driving  circuit,  the  input electrical  power  can  be  critically  coupled  into  the  resonator,  leading  to  enhanced  EO modulation efficiency and negligible reflected electrical power.

A crucial requirement to achieve efficient EO comb generation is phase matching between the resonant optical- and micro-waves. In our device architecture, this is naturally satisfied when the microwave resonance frequency f MR ,  applied  microwave  frequency f MW ,  and  the

Signal source optical free-spectral range (FSR) are equal to each other. As the schematic shows in Fig. 1c, considering  a  counter-clockwise-traveling  optical  pulse  (green)  present  at  the  top  middle section  of  the  microwave  resonator  at  time t 0 , it experiences  a  positive  maximum  EO modulation effect if the microwave field is pointing upwards (from signal to ground) at this point. The optical pulse circulates and reaches the bottom middle section of the resonator at time t 0+ τ /2 ,  where τ =1/FSR is  the  round-trip  time  of  the  optical  resonator.  Although  the electric field at this location is opposite to that in the upper gap (pointing downwards at time t 0 , as shown in Fig. 1c), it exactly flips to the upward -pointing direction at t 0+ /2 τ , as long as the microwave modulation frequency f MW is equal to the optical FSR (such that microwave period TMW = 1/ fMW = τ ). As a result, the optical pulse again sees a positive maximum EO modulation field at t 0+ /2 τ . At other locations of the resonator, although the electric field strength may be smaller, the optical signal always experiences upwardpointing electric field and therefore a constructive accumulation of EO modulation throughout the resonator.

In our device targeting a repetition rate of ~25 GHz  the microwave transmission line has an , effective index ( neff,MW ) of ~2.6 and an effective wavelength of 4.4 mm, leading to a total length of 1.1 mm for the λ /4 resonator. Meanwhile, the optical group index ( ng,O ) is 2.26 in the TFLN waveguide at telecommunication wavelengths, necessitating a round-trip length of 5.1 mm for  the  racetrack  resonator.  We  use  a bending radius of 80  micrometer with a Euler curve shape to minimize bending loss, such that the straight section of the racetrack is 2.3 mm long. This allows the λ /4 resonator to be placed approximately within the left half of the optical resonator to satisfy the phase-matching condition discussed above.

We des ign and fine tune the microwave resonator and coupling IDE to achieve impedance matching  with  the  external  driving  circuit  at  the  target  resonance  frequency.  Figure  2a illustrates the top-view and cross-section schematic of the CPW microwave resonator. This short-circuit λ /4  resonator can be equivalently modeled by a parallel RLC resonant circuit near resonance (Fig. 2b), where the input signal is applied from the driving circuit (ii) into the resonator circuit (i). Assuming there is no extra loss on the transmission line, the total input impedance of (i) is given by

$$Z _ { i n } = & \frac { 1 } { i \omega C _ { \kappa } } + Z _ { L C R } = \frac { 1 } { i \omega C _ { \kappa } } + \left ( \frac { 1 } { i \omega L } + i \omega C + \frac { 1 } { R } \right ) ^ { - 1 }$$

where C κ represents the capacitance of the IDE, and R L , and C are the equivalent resistance, inductance and capacitance of the RLC resonator, respectively. Details of the derivation of characteristic  parameters  are  discussed  in  the  Supplementary  Information.  It  should  be noted that the existence of the coupling capacitor not only changes the input impedance Zin , but also shifts the resonance frequency f MR from the isolated RLC resonance. As a result, the on-resonance  impedance Zin could  be  effectively  controlled by fine  tuning the  coupling capacitance C κ .  In  our experiments, we vary the IDE length Lf to  achieve a near 50 Ω input impedance to match that of the external driving circuit and minimize power reflection.

We experimentally verify the performance of the designed λ

reflection  coefficient ( ) ( ) 11 / in L in L S Z R Z R = -+ , using a vector network analyzer. Lf of the IDE with fixed finger width wf = 3 μ m and slot width sf = gf = 2 μ

/4  resonator by measuring the which  should  ideally  be  zero  at  25  GHz, We vary the coupling strength by sweeping the finger length m. Figure 2c displays the measured responses from a CPW resonator with a finger length of 33.5 μ m (blue) and a lumped capacitor electrode (red). The fabricated resonator shows a strong resonance dip at 25.67 GHz, with an on-resonance reflection down to -49.8 dB. The measured results are also consistent with the calculation results from the equivalent circuit model (yellow), where the slight  discrepancy  may  result  from  deviations  in  the  geometric  dimensions  and  dielectric constants between theory and actually fabricated devices. Importantly, the power reflection could remain &lt; 20 dB (less than 1%) within a relatively broad frequency range of 1 GHz, which provides crucial tolerance and flexibility in practical applications where the optical FSR may not be perfectly aligned with the microwave resonance. In our actual device to be discussed in more details next, the EO comb operates at a repetition rate of 25.612 GHz (dashed line), where the power reflection is -46 dB. This is in sharp contrast to the lumped-capacitor case (red) with a -3 dB power reflection into the driving circuit (rest is lost in the on -chip resistance).

(a)

Fig. 2 Microwave resonator design. (a) Top view of the CPW resonator with shorted terminal at the left end and coupling interdigitated finger electrodes at the right-hand side. Insets: Cross-section schematics of the CPW resonator at  the  shorted  metallic  bridge  (blue  dashed  line)  and  along  the  transmission  line  (green dashed line), respectively. (b) Equivalent circuit model of the short-circuited λ/ 4 CPW resonator (i), driven by external circuit (ii) with a source impedance of R L = 50 Ω . (c) Calculated (yellow) and measured microwave reflection coefficients of the CPW resonator (blue), and that measured from a lumped capacitor electrodes (red), respectively.

![Image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00459v1-figure-3869b555-3e95-438b-aa86-7a5f60e8f1d6.jpg)

## Device fabrication and electro-optic frequency comb generation

All devices are fabricated on x-cut TFLN wafers (NANOLN). The wafer stack consists of a 500nm TFLN layer,  a  4.7μ m thermal oxide buffer layer  and  a  500μ m high-resistance  silicon substrate layer. The bare wafer was first coated by a layer of 700 nm thick SiO2 using plasmaenhanced chemical vapor deposition (PECVD) as etch mask. The optical waveguides and optical racetrack cavities are then patterned by an ASML UV Stepper lithography system (NFF, HKUST). The patterns are transferred into the oxide mask layer and LN layer sequentially using reactive ion etching (RIE) with a 250 nm etch depth. After removing the remaining etch mask, another layer of PECVD oxide is coated to form a 1.5 μ m thick upper cladding of the optical waveguides. The metallic electrodes (750 nm of copper, 50 nm of gold) are formed by a second stepper  lithography  process,  followed  by  thermal  deposition  and  liftoff. The  signal  has  a width of 150 μ m and the gap between signal and ground is set as 7 μ m. 5 μ m wide metallic bridges  (800  nm  of  copper)  are  then  patterned  at  the  short  end  of  the  CPW  resonator  by electron-beam lithography (EBL), thermal deposition and liftoff processes. Finally, facets of the  fabricated  devices  are  cleaved  for  optical  measurements.  The  fabricated  optical  bus (racetrack) waveguide has a top width of 1.2 μ m (2 μ m) and the racetrack bends are designed with  Euler-curve  shape  to  reduce  radiation  loss.  Figure  3a  shows  the  micrographs  of  the fabricated EO comb generators with lumped-capacitor (top, as reference) and CPW resonator electrodes  (bottom),  respectively.  Figure  3b  shows  scanning  electric  microscope  (SEM) images with details of the metallic bridges and the IDE.

(a)

Wavelength (nm)

Fig. 3 Broadband EO comb generation. (a) Micrographs of the fabricated on-chip EO comb generators with lumped-capacitor (top) and CPW resonator (bottom) electrodes. (b) SEM images of the metallic bridges at the shorted terminal (left) and the IDE coupler (right), respectively. The scale bars are 20 μ m in both panels. (c) Measured EO comb spectra from the lumped capacitor (top) and CPW resonator electrodes (bottom) with the same input electrical power of 28.7 dBm. Insets show the device configuration s  (left)  and  measured optical transmission spectra (right) of the corresponding devices.

![Image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00459v1-figure-b4110b9f-a48a-413b-8c93-13dbe835219c.jpg)

We finally demonstrate power efficient and RF isolator --free EO comb generation enabled by the  CPW  microwave  resonator.  Optical  pump  from  a  continuous-wave  tunable  laser (SANTEC-550) is launched into the TFLN waveguide via a lensed fiber. The optical output is collected by another lensed fiber and recorded by an optical spectrum analyzer (Yokogawa AQ6370D).  The  driving  microwave  signal  near  25  GHz  is  generated  by  a  radio-frequency synthesizer  and  amplified  by  an  electrical  power  amplifier. For  the  microwave-resonator devices, the amplified electrical signal is applied directly onto the microelectrodes using a GSG probe, without the need of a circulator or isolator, thanks to the excellent impedance matching and minimal power reflection .  As for the reference device with lumped capacitor electrodes ,  the  amplified  electrical  signal  is  first passed  through  a  microwave  circulator before delivered to the microelectrodes . The reflected electrical power is then terminated at a 50Ω load through the circulator, similar to that used in Refs. [22, 36]. To compensate the loss  from  the  circulator  (0.9  dB  at  25  GHz),  the  output  power from  electrical  amplifier is slightly higher than that used for measuring the CPW devices. During the experiments, the optical input pump power is fixed at 2 mW and the applied electrical driving power on chip are calibrated to be 740 mW (28.7 dBm) in both cases.

We show that our CPW resonator enables frequency comb generation with approximately doubled comb span from the reference lump-capacitor device. When the input optical and microwave  frequencies  are  both  tuned  into  resonance  with  the  on-chip  optical  and microwave resonators, we achieve broadband EO comb with an 85 nm span and 430 comb lines at a repetition rate of 25.612 GHz (Fig. 3c, bottom). The measured spectral span and rolloff slope (~0.9 dB/nm) are both on par with that reported in Ref.[22], but achieved using similar input RF power and an optical resonator with 1.8 times lower loaded QL factor ( QL = 8.5 × 10 5 ). Since the resonant EO comb span is proportionate to both optical QL and modulation index [38], this indicates an approximately 1.7 times increased modulation index. The modulation enhancement factor is further corroborated using the measured EO comb from the reference device fabricated on the same chip, which features a comb span of 38 nm (narrower by a factor of 2.2) with a repetition rate of 25.255 GHz (Fig. 3c, top). Taking into account the slightly lower QL of 6.8 × 10 5 in the reference device, the effective modulation enhancement factor of our microwave resonator design is 1.8, which corresponds to more than 3 times reduction in electrical  power  consumption.  Considering  the  signal  length  of  the  microwave  resonator electrode is approximately half (1100 μ m) of that in the lumped capacitor device (2300 μ m), we estimate that the average electric field strength in the EO modulation region is enhanced by a factor of 3.6 in the microwave resonator. The EO comb span could in principle be further broadened to 240 nm with an improved optical Q factor of 1.4 × 10 6 and a higher microwave power  of  33.4  dBm  (same  condition  as  that  in  Ref.[36]).  In  this  case,  a  more  careful engineering of the waveguide dispersion will likely be required. We note though, operating in a  moderateQ -factor  regime  in  this  work  also  offers  distinct  advantages  for  practical applications,  as  the  overall  pump-tocomb  conversion  efficiency is higher  (~ 0.6% , as compared to 0.3 % in Ref. [22]) and the system is less prone to optical and microwave detuning.

Theoretically,  our  EO  comb  generator  exhibits  optimal  performance  when  the  microwave resonance  frequency f MR is  perfectly  matched  with  the  optical  FSR.  To  investigate  the tolerance  to  potential  mismatch  between f MR and  FSR that  may  arise  from  fabrication deviations, we fabricate and measure a series of devices with identical microwave resonator electrodes, but varying optical racetrack resonator sizes. The performance of each EO comb generator is evaluated by fixing the optical pump and microwave driving power, while fine -tuning  microwave  frequency  to  the  optical  FSR  in  each  device.  As  shown  in  Fig.  4,  the generated comb span gradually decreases when the optical FSR shifts away from the CPW resonance frequency at 25.67 GHz. The trend of measured comb span (blue dots) agrees well with the calculated relat ive electric field strength (black curve). Importantly, the measured comb span remains &gt;75 nm (~90% the optimal value) within a relatively broad optical FSR range of 25.4-25.7 GHz, providing important robustness and tolerance in practical scenarios.

Fig. 4 Tolerance to frequency mismatch between optical and microwave resonators. Blue dots show the measured comb span (top horizontal axis) for optical racetrack resonators with different FSRs (right vertical axis),  driven  with  microwave  frequencies  (left  vertical  axis)  matched  with  FSR.  The  corresponding  comb spectra are shown in the left insets. Black solid curve shows the normalized electric field strength (bottom horizontal axis) derived from the measured S11 parameter of the CPW resonator (results in the full measured frequency range are shown in the bottom right inset).

![Image](https://ac.marcodsn.me/arxiv-markdown-images/2408.00459v1-figure-77988a8e-6d1b-497b-97d5-145627f616f1.jpg)

## Discussions and conclusions

In conclusion, our EO comb source embedded with  /4 CPW microwave resonator electrodes λ not  only  feature substantially  improved  comb  generation  efficiency,  but  also  strongly suppresses power reflection back to the driving circuit . The reduced RF power consumption and removal of electrical isolators or circulators are highly desired for such EO combs to be applied in practical and commercial scenarios. The design principles and analytical model developed in this work can be readily extended to other microwave frequencies (and in turn comb repetition rates) by scaling the CPW resonator and IDE lengths. Our research provides a simple and feasible solution for achieving efficient and low -cost integrated EO frequency combs,  promising  for  applications  in  precision  metrology,  advanced  spectroscopy,  and optical communication systems.

## Acknowledgements

This work is supported in part by the Research Grants Council, University Grants Committee (CityU  11212721,  CityU  11204022,  N\_CityU113/20);  Croucher  Foundation  (9509005);  City University of Hong Kong (9610682). We acknowledge Nanosystem Fabrication Facility (CWB) of HKUST for the device/system fabrication.

## Conflict of interest

The authors declare no conflicts of interest.

## Data availability

Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Zhaoxi Chen Yiwen Zhang Hanke Feng Yuansong Zeng Ke Zhang Cheng Wang
Microwave resonator-enabled broadband on-chip electro-optic frequency comb generation
Optical frequency combs play a crucial role in optical communications,
time-frequency metrology, precise ranging, and sensing. Among various
generation schemes, resonant electro-optic combs are particularly attractive
for its excellent stability, flexibility and broad bandwidths. In this
approach, an optical pump undergoes multiple electro-optic modulation processes
in a high-Q optical resonator, resulting in cascaded spectral sidebands.
However, most resonant electro-optic combs to date make use of lumped-capacitor
electrodes with relatively inefficient utilization of the input electrical
power. This design also reflects most electrical power back to the driving
circuits and necessitates costly RF isolators in between, presenting
substantial challenges in practical applications. To address these issues, we
present an RF circuit friendly electro-optic frequency comb generator
incorporated with on-chip coplanar microwave resonator electrodes, based on a
thin-film lithium niobate platform. Our design achieves more than three times
electrical power reduction with minimal reflection at the designed comb
repetition rate of ~ 25 GHz. We experimentally demonstrate broadband
electro-optic frequency comb generation with a comb span of >85 nm at a
moderate electrical driving power of 740 mW (28.7 dBm). Our power-efficient and
isolator-free electro-optic comb source could offer compact, low-cost and
simple-to-design solution for applications in spectroscopy, high-precise
metrology, optical communications.