## A Method to Determine Broadband Complex Permittivity of Thin Film Dielectric Materials up to 60 GHz

Liang Wang  1 , Guangrui (Maggie) Xia  1, 2 , Hongyu Yu  1, 3,4*

- 1 School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
- 2 Department of Materials Engineering, The University of British Columbia, Vancouver, BC, Canada
- 3 GaN Device Engineering  Technology  Research  Center  of  Guangdong,  Southern  University  of  Science  and Technology, Shenzhen, China
- 4 The Key Laboratory of the Third Generation Semiconductor, Southern University of Science and Technology, Shenzhen, China

## * yuhy@sustech.edu.cn

Abstract: This paper describes a method to determine the complex permittivity of a thin dielectric film from finite element analysis and microstrip line measurements. Two transmission line equivalent circuit models were used for the cases of an air-filled line and a lossless line, whose distributed elements can be  calculated from full wave finite element simulations . With these calculated distributed elements and microstrip line measurements, the complex permittivity was extracted. The technique utilizes a simple way to separate the dielectric loss from the measured total loss and the complex permittivity was extracted using the measured propagation constant. A rational dielectric model was employed to fit the extracted complex permittivity,  which  ensures  causality  of  the  final  solution.  The  best  fitting  results  obtained  through  this  procedure  are considered  as  the  final  permittivity  results,  which  have  shown  excellent  match  to  the  data  sheet  values.  Moreover, simulations  using  the  fitted  permittivity  exhibit  good  agreement  with  the  experimental  propagation  constant  data  of microstrip lines up to 60 GHz. The proposed method was demonstrated on polyimide, and it can be applied to other thin film materials.

## 1. Introduction

Current electromagnetic simulation tools can achieve very high accuracy and provide valuable insights on circuit behaviours. This helps circuit designers to build up models for signal analysis and performance predictions. An accurate simulation model requires precise complex permittivities of substrate materials. With the evolution of wireless network towards 5G  and beyond, the data transfer speed and bandwidth  are  required  to  increase dramatically. When designing high speed electrical circuits, it's critically important to obtain the broadband high frequency dielectric properties  instead  of  using  the  single  point  low-frequency permittivity data given by manufacturers.

In the  past  decades,  the  extractions  of  dielectric permittivity have been accomplished by numerous measurement schemes, which mainly fall into three categories: parallel plate capacitors [1], resonators [2, 3] and transmission line (TLine) measurements [4-7]. The parallel plate capacitor method only works at low frequencies and the resonator measurement is reliable at a few discrete resonance frequency points.

The  TLine  measurements,  on  the  other  hand,  give repeatable results and are capable of determining frequencydependent material parameters. Based on TLine measurements, some recent studies relate the imaginary part of the permittivity to the real part using dielectric relaxation models [8,9]. The obtained permittivity is physically consistent, which is described by the Kramers-Kronig relation. However, the algorithm for finding dielectric model parameters  is  complex.  The  searching  and  optimization algorithm  normally  returns  tens  or  hundreds  of  solutions, which need to be further selected by numerous simulations and iterations. In this work, we established a more convenient method to address this problem.

The complex permittivity was calculated with the aid of simulations and design equations. Finite element analysis was applied to calculate the lumped element values, which were used to separate the dielectric loss of the substrate from the measured total loss in the microstrip line measurements. At  the  end,  a  rational  dielectric  model  was  used  to  fit  the calculated raw data, which ensures the causality of the final results. The best-fitting results show good agreement to low frequency data sheet values and were validated by experiments up to 60 GHz.

## 2. Experiment

Polyimide dielectric HD-4110 (from HD Microsystems) was selected as the specimen material, and the thin  film  microstrip  line  (TFMSL)  was  used  as  the  test structure. The TFMSL, as depicted in Fig. 1, consisted of two metal layers and one dielectric layer. In this work, both the signal  trace  and  ground  plane  were  copper  films  deposited using magnetron sputtering.

Fig.  1. Microstrip  line  cross-section  with  dimensions  and conductivity symbols defined, where w = 38.3, t = 1, h = 14.2 (all in µm) and σ = 5.8×10 7 S/m.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00128v1-figure-1656247b-ffeb-42fe-b8cf-791c23ddb86a.jpg)

Multiple TFMSLs were fabricated on a single substrate. First, the ground metal layer was deposited directly on  the  glass  carrier  and  then  patterned  by  a  wet  etching method. Next, the central polyimide film HD-4110 was spincoated. In order to make electrical connections from probe pads to the microstrip ground plane, via holes were opened through the central polyimide by a lithography technique. The sample was then cured in a vacuum oven at 375°C. After the curing, a brief reactive ion etch (RIE) treatment was applied on  the  polyimide  surface,  and  the  top  metal  layer  was deposited  and  patterned.  Fig.  2  presents  a  graph  of  the fabricated sample consisting a set of TFMSLs with different lengths from 400 to 7000 µm.

Fig.  2. Optical  image  of  the  fabricated  TFMSLs  for  the extraction of polyimide permittivity at x10 magnification.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00128v1-figure-167ea393-4d88-4835-9ccc-6387a774f23d.jpg)

All the lines, in addition to connecting with the same Ground-Signal-Ground (GSG) probe pads, were designed to have the same line width of 38.3 µm. A linear taper transition was made from the central probe pad to the microstrips. The thickness of polyimide  was measured to be 14.2 ± 0.1 µm across  the  whole  surface  area.  After  the  fabrication,  the surface roughness of both polyimide and the top metal trace were  inspected  Wyko  optical  profilometer.  The  calculated root-mean-square  roughness  for  both  polyimide  and  metal surface was below 20 nm, which was low enough that can be neglected in the following analysis.

The microwave measurements on the TFMSLs were carried  out  using  a  vector  network  analyser  (VNA)  AGT E8361C from Agilent Technologies. A total number of 401 frequency  points  was  measured  over  the  frequency  range from 100 MHz to 60 GHz. A pair of GSG probes with a pitch of 150 µm were connected to the VNA through coaxial cables. After an initial probe tip calibration, the probes were directly placed  on  the  TFMSL  contact  pads  to  start  measurements. The temperature of laboratory during measurement was 20 °C.

Generally,  propagation  constants  can  be  determined from the scattering parameter measurements of transmission lines using multiline method [10]. If two measured microstrip lines  have  the  same  line  width  and  dielectric  thickness,  a larger difference in their line length can minimize the error in calculating the propagation constant. However, it is difficult to control the dimension uniformity for an extremely long line. Any variation in the dimension will deteriorate the accuracy of the extraction. In this work, we used only two TFMSLs with the lengths of 400 and 7000 µm respectively.

## 3. Distributed Element Model

Below, we will discuss the first step of our method, where simple equivalent circuit models were used to calculate the important distributed elements such as the resistance per unit length R, the inductance per unit length L ,  the external inductance per unit length 𝐿ext and the air-filled capacitance per unit length C a , which are illustrated in Fig. 3.

The complex permittivity 𝜀 of a dielectric material is defined as

$$\varepsilon = \varepsilon _ { 0 } \varepsilon _ { \mathrm r } ( 1 - j t a n \delta ) \ ( 1 )$$

where 𝜀0 is the  free  space  permittivity, 𝜀r is the  relative permittivity and 𝑡𝑎𝑛𝛿 is the loss tangent.

When the TFMSL operates in the quasi-TEM region, a well-known distributed equivalent circuit model can describe its transmission behaviour, as shown in Fig. 3 a [11]. The TLine characteristic  impedance Z and  the  propagation constant 𝑟 can be written in terms of the distributed elements:

$$Z = \sqrt { \frac { R + j \omega L } { G + j \omega C } } \quad ( 2 ) \\ r = \sqrt { ( R + j \omega L ) ( G + j \omega C ) } \quad ( 3 )$$

where 𝜔 denotes the angular frequency.

The resistance  per  unit  length R and  inductance  per unit length L are independent of the central dielectric property [12]. Thus, in case of an air-filled line, the equivalent circuit model can be simplified by removing the shunt conductance G while retaining the series impedance elements L and R , as shown in Fig. 3 b . It should be noticed that the capacitance per unit length C is replaced by the air-filled capacitance per unit length C a .

It is been proved that the total inductance L is a sum of its internal and external part [13]. The internal inductance 𝐿int , which  stems  from  the magnetic field inside the conductors, can be further excluded in the distributed model for an air-filled lossless line as shown in Fig. 3 c .

Fig. 3. Distributed equivalent circuit models of the microstrip lines for the following cases: (a) a dielectric-filled line, (b) an air-filled line, and (c) an air-filled lossless line.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00128v1-figure-92e87754-cd52-4b6d-82bb-258aa74e8fdc.jpg)

Because the expressions in (2) and (3) are also valid for the equivalent circuit models in Figs. 3 b and c , these two expressions can be used to determine the distributed element values once we know the corresponding Z and 𝑟 . With the aid of a full wave simulation, the frequency-dependent Z and 𝑟 of a TLine can be calculated. Then by combining (2) and (3), we can determine the value of the distributed elements such as L R , , 𝐿ext and C a .

In this work, Ansoft HFSS was employed to perform the simulations. Since the surface roughness of the TFMSL was within tens of nanometres, its influence on transmission was too small to be incorporated in the simulation. First, two air-filled  microstrips  were  built  with  the  same  geometry  as shown in Fig. 1. In the first structure, the metal resistivity was defined as zero, and therefore the equivalent circuit is in Fig. 3 .  In  the  second  structure,  the  Cu  metal  conductivity  was c used  where σ  = 5.8×10 7 S/m,  and  therefore  the  equivalent circuit  is  in  Fig.  3 b .  Then, Z and 𝑟 of  each  structure  were calculated  by  Ansoft  HFSS.  After  that, 𝐿ext and C a were solved from Z and 𝑟 of the first structure, and R and L were solved from Z and 𝑟 of the second structure. Fig. 4 plots the calculated L and L ext . Fig. 5 shows the results of R and C a .

Fig. 4. Calculated L and 𝐿ext for TFMSL.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00128v1-figure-2ae103fa-78b9-489d-a163-6aaab897b87e.jpg)

Fig. 5. Calculated R and C  for TFMSL. a

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00128v1-figure-3fe762ef-211e-474a-bfec-491eb7769fa3.jpg)

## 4. Dielectric Permittivity Extraction

The next step was to extract the complex permittivity of the dielectric substrate. The propagation constant 𝑟 of the fabricated  TFMSL  was  calculated  using  two  lines  with different  lengths.  For  each  line,  the  measured  two  port scattering matrix was converted to a form of cascading matrix M , which is consider as a product of three parts:

$$M _ { 1 } = X \, T _ { 1 } Y \, \left ( 4 \right )$$

$$M _ { 2 } = X \, T _ { 2 } Y \, \ ( 5 )$$

where X is the input matrix including the input transition from probe tip to microstrip line, T represents the transmission line matrix,  and Y is  the  output  matrix  representing  the  output transition from microstrip to probe tip. The matrix X T , and Y are all in cascading form. If multiplying the matrix M 1 by the  inverse  matrix M 2 , the  combination  is  an  eigenvalue equation:

$$M _ { 1 } ( M _ { 2 } ) ^ { - 1 } = X \, T _ { 1 } ( T _ { 2 } ) ^ { - 1 } ( X ) ^ { - 1 } \ ( 6 )$$

Using the fact that the sum of the diagonal elements does not change under the similar transformation in matrix calculation, the propagation constant can be derived from the relation

$$\text{tr} ( M _ { 1 } ( M _ { 2 } ) ^ { - 1 } ) = \text{tr} ( T _ { 1 } ( T _ { 2 } ) ^ { - 1 } ) = 2 \, c o s h \, r \Delta l \ ( 7 )$$

where Δl is  the  length  difference  between  two  transmission line.

Once the propagation constant 𝑟 is  obtained,  we  can separate it into real part and imaginary part. The real part 𝛼 is called attenuation constant, which reflects the loss of propagation;  the  imaginary  part 𝛽 is  called  phase  constant, which represents the speed of transmission.

When  an  electromagnetic wave  propagates in a microstrip transmission line, most of the energy contains in the dielectric substrate, and a portion of the energy exists in the  ambient  air.  To  account  for  this  effect,  the  notions  of complex effective permittivity 𝜀eff and effective permeability 𝜇eff are introduced. Therefore, the propagation constant can be written as a function of 𝜀eff and 𝜇eff as given in [14]

$$r = \alpha + j \beta = j \, \frac { \omega } { c } \sqrt { \mu _ { \text{eff} } \varepsilon _ { \text{eff} } } \ ( 8 )$$

where c is the speed of light.

Combining equation (8) and (3), we can deduce the expression of 𝜀eff and 𝜇eff in terms of the lumped elements

$$\mu _ { \text{eff} } = \frac { R + j \omega L } { j \omega L _ { \text{ext} } } \ \ ( 9 )$$

$$\varepsilon _ { \text{eff} } = \frac { G + j \omega C } { j \omega C _ { \text{a} } } = \varepsilon _ { \text{eff} } ^ { \prime } - j \varepsilon _ { \text{eff} } ^ { \prime \prime } \ ( 1 0 )$$

where 𝜀 eff ′ and 𝜀 eff ′′ are  the  real  and  imaginary  part  of 𝜀eff . Then combining equation (8) to (10) yields

$$\beta ^ { 2 } - \alpha ^ { 2 } + j 2 \alpha \beta & = \frac { \omega ^ { 2 } } { c ^ { 2 } } \left ( 1 + \frac { L _ { \text{int} } } { L _ { \text{ext} } } \right ) \varepsilon ^ { \prime } _ { \text{eff} } \\ & + j \frac { \omega ^ { 2 } } { c ^ { 2 } } \left ( \frac { L } { L _ { \text{ext} } } \frac { G } { \omega C _ { \text{a} } } + \frac { \varepsilon ^ { \prime } _ { \text{eff} } R } { \omega L _ { \text{ext} } } \right ) \ \ ( 1 1 )$$

In order to extract the complex permittivity, the first step is to find its relative permittivity 𝜀r .  By taking the real part of (11) and reorganize it, 𝜀 eff ′ can be written as

$$\varepsilon _ { \text{eff} } ^ { \prime } = \frac { c ^ { 2 } } { \omega ^ { 2 } } \frac { \beta ^ { 2 } - \alpha ^ { 2 } } { \left ( 1 + \frac { L _ { \text{int} } } { L _ { \text{ext} } } \right ) } \ \left ( 1 2 \right ) \\ \text{the I.s.d. and I.s. are already known from}$$

Since both the 𝐿int and 𝐿ext are already known from the fullwave simulations, 𝜀 eff ′ then can be determined from (12).

It is obvious that there is one-to-one correspondence between 𝜀 eff ′ and the relative permittivity 𝜀r . If the microship linewidth w is larger than its dielectric thickness h , which is true  for  our  TFMSL, 𝜀r can  be  found  through  the  relation given in [8]

$$\varepsilon _ { \text{eff} } ^ { \prime } = \frac { \varepsilon _ { r } + 1 } { 2 } + \frac { \varepsilon _ { r } - 1 } { 2 } \, \left ( 1 + \frac { 1 2 h } { w } \right ) ^ { - \frac { 1 } { 2 } } \\ - \, 0. 2 1 7 ( \varepsilon _ { r } - 1 ) \frac { t } { \sqrt { w h } } \, \ ( 1 3 )$$

The  second  step  is  to  calculate  the  dielectric  loss tangent 𝑡𝑎𝑛𝛿 . The imaginary part of (11) can be written as

$$2 \alpha \beta = \frac { \omega ^ { 2 } } { c ^ { 2 } } \left ( \frac { L } { L _ { \text{ext} } } \frac { G } { \omega C _ { \text{a} } } + \frac { \varepsilon ^ { \prime } _ { \text{eff} } R } { \omega L _ { \text{ext} } } \right ) \ \ ( 1 4 )$$

When the microwave energy propagates in a microstrip line, the attenuation caused by dielectric loss is modelled by the shunt conductance G . On the other hand, the energy stored in dielectric material results in shunt capacitance C , which can be further expressed by substrate relative permittivity and airfilled capacitance C a .  According to [11, p.155], the relation between conductance G and C a is given as

$$\frac { G } { \omega C _ { \text{a} } } = \frac { ( \varepsilon ^ { \prime } _ { \text{eff} } - 1 ) \varepsilon _ { \text{r} } } { \varepsilon _ { \text{r} } - 1 } t a n \delta \ ( 1 5 )$$

By substitute (15) into (14), one has

$$\alpha = \frac { \omega ^ { 2 } } { 2 \beta c ^ { 2 } } \frac { L } { L _ { \text{ext} } } \frac { ( \varepsilon ^ { \prime } _ { \text{eff} } - 1 ) \varepsilon _ { \text{r} } } { \varepsilon _ { \text{r} } - 1 } t a n \delta + \frac { \omega ^ { 2 } } { 2 \beta c ^ { 2 } } \frac { \varepsilon ^ { \prime } _ { \text{eff} } R } { \omega L _ { \text{ext} } } \ ( 1 6 )$$

The first term on the right hand of the (16) is related to the dielectric loss, and the second term represents the conductor loss.  It  is  now  possible  to  calculate  the  value  of  the  loss tangent using (16), since all the other parameters in (16) have already been obtained throughout the above procedure.

The solid lines in Fig. 6 and 7 show the extracted broadband substrate 𝜀r and 𝑡𝑎𝑛𝛿 .  The  dashed  lines  in  both  figures  are the  best-fitting  curves  using  Equation  (17),  which  will  be further discussed in the next section.

Fig. 6. The extracted 𝜀𝑟 of polyimide HD-4110 and the bestfitting results with Equation (17).

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00128v1-figure-44f22234-0585-491d-99a7-d3551176df35.jpg)

Fig.  7. The  extracted 𝑡𝑎𝑛𝛿 of  polyimide  HD-4110  and  the best-fitting results with Equation (17).

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00128v1-figure-ec85fa93-cf18-4e8d-86b3-ea7116c03532.jpg)

As shown by the solid lines, the extracted data below 4.2 GHz were omitted, because the strong slow wave effect is dominant for this frequency range. The slow wave effect, which is caused by small ratio of the metal thickness to the skin depth, makes permittivity extraction has large variation [7]. At about 4.2 GHz, the metal thickness is equal to the skin depth. Therefore, we can assume that this method is accurate beyond this threshold frequency.

## 5. Dielectric Model Fitting and Validations

The final  results  for  the  dielectric  permittivity  must also  satisfy  causality.  A  rational  permittivity  model,  which consists of a discrete sum of dipole moments, is given as [9]

$$\varepsilon ( j 2 \pi f ) = \varepsilon _ { \infty } + \sum _ { n = 1 } ^ { \infty } \left ( \frac { c _ { \mathbf n } } { j 2 \pi f - a _ { \mathbf n } } \right ) \ ( 1 7 )$$

where   is  the  frequency, f 𝜀∞ denotes  the  infinite  frequency limit, 𝑎n is  the  poles and 𝑐 n is  the  residues.  For the sake of stability, the real part of 𝑎n must be negative.

This dielectric model was employed to fit the extracted permittivity using Matlab. The number of poles in the dielectric model should be kept small while it still could generate good fittings. For the concerned bandwidth in this work, four-pole equation is sufficient to express the dielectric function.  It  should  be  mentioned  that  when  the  fitting  is required for a broader bandwidth, the number of dipoles may need to be increased accordingly. The result of the fitting is plotted  as  dashed  lines  in  Fig.  6  and  7.  These  best-fitting curves  are  based  on  Kramers-Kronig  relation  and  were calibrated by the experimental results. Therefore, we consider these results are our final permittivity results.

It  can  be  seen  that  the  extracted  permittivity  can  be well approximated by the model. Moreover, the best-fitting model can extrapolate the permittivity value below 4.2 GHz. At  the  lowest  frequency  of  1  MHz,  the  model  predicted  a relative  permittivity  of  3.35,  which  is  very  close  to  3.36 provided  by  the  manufacturer  at  the  same  frequency.  The same consistency  was also  found  for  the  loss  tangent.  The best-fitting  data  predicted  that  below  100  MHz  the  loss tangent of HD-4110 should be less than 1.1×10 -3 , while that specified by the manufacturer is 1×10 -3 at 1 MHz.

As the good agreement with data sheet values was in the  low frequency regime, we needed another validation at the high frequency regime. To do that, a new pair of TFMSLs were  produced  using  the  same  thin  film  technology.  The propagation  constant 𝑟 was  measured  up  to  60  GHz  and compared  with  the  simulated  results  using  the  permittivity data we just obtained for polyimide HD-4110.

The new TFMSLs have a different thickness of 7.1 µm and a different line width of 25.5 µm. An HFSS simulation of the  new  TFMSL  structure  using  the  permittivity  data  was performed to calculate 𝑟 .  The simulated 𝑟 was compared to the  measured value. Fig. 8 shows that a good agreement is achieved  between  the  measurement  and  HFSS  simulation results across the whole bandwidth up to 60 GHz.

Fig. 8. Comparison of the measured and simulated propagation constant for TFMSL with dimension of w = 25.5, t = 1, h = 7.1 (all in µm) and σ = 5.8×10 7 S/m.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00128v1-figure-b4dbbd78-7e81-4d99-9a58-9419c40d3e20.jpg)

## 6. Analysis and Discussion

Although the above technique shows promising results, some factors can influence the accuracy of the method. The  best-fitting  curve  relies  on  the  accuracy  of  the  raw permittivity data, which were originally calculated with the aid of HFSS simulations. Therefore, errors in the simulation structures and settings, such as surface roughness, variations of dimensions, uncertainty in metal conductivity, may cause deviations  of  results  from  the  true  values.  However,  these factors  can  be  minimized  by  using  the  average  value  of measurements at multiple sites along the TLines.

## 7. Conclusion

In  this  work,  a  simple  procedure  was  proposed  and validated to determine physically consistent complex permittivity of a thin film dielectric material from very low frequency  up  to  60  GHz.  Knowing  the  geometry  of  the microstrip lines, distributed element values in the equivalent circuit  model  were  obtained  by  merely  two  simulations. Based on the obtained distributed elements and the measured propagation constant, the dielectric loss was separated from the measured total loss. The extracted complex permittivity was well fitted by a rational dielectric model. The best-fitting curve satisfies the causality constraints and was considered as final result,  whose values  match to the available data sheet values. A good agreement was also demonstrated between the experimental and the simulated results up to 60 GHz.

## 8. Acknowledgment

This work was supported in part by Science, Technology and Innovation Commission of Shenzhen under the Contract of JCYJ20160226192639004, JCYJ20170412153356899 and was supported in part by Department of Science and Technology of Guangdong Province under the Contract of 2017A050506002, 2019B010128001

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Liang Wang Guangrui Xia Hongyu Yu
A Method to Determine Broadband Complex Permittivity of Thin Film Dielectric Materials up to 60 GHz
This paper describes a method to determine the complex permittivity of a thin
dielectric film from finite element analysis and microstrip line measurements.
Two transmission line equivalent circuit models were used for the cases of an
air-filled line and a lossless line, whose distributed elements can be
calculated from full wave finite element simulations. With these calculated
distributed elements and microstrip line measurements, the complex permittivity
was extracted. The technique utilizes a simple way to separate the dielectric
loss from the measured total loss and the complex permittivity was extracted
using the measured propagation constant. A rational dielectric model was
employed to fit the extracted complex permittivity, which ensures causality of
the final solution. The best fitting results obtained through this procedure
are considered as the final permittivity results, which have shown excellent
match to the data sheet values. Moreover, simulations using the fitted
permittivity exhibit good agreement with the experimental propagation constant
data of microstrip lines up to 60 GHz. The proposed method was demonstrated on
polyimide, and it can be applied to other thin film materials.