## Photonic integrated circuits in the continuum

Zejie Yu 1 , Xiang Xi 1 , Jingwen Ma 1 , Hon Ki Tsang 1 , Chang-Ling Zou 2  and Xiankai Sun 1,*

1 Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong.

2 Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.

*

e-mail: xksun@cuhk.edu.hk

Waves that are perfectly confined in the continuous spectrum of radiating waves without interaction with them are known as bound states in the continuum (BICs). Despite recent discoveries of BICs in nanophotonics, full routing and control of BICs are yet to be explored. Here, we experimentally demonstrate BICs in a fundamentally new photonic architecture by patterning  a  low-refractive-index  material  on  a  high-refractive-index  substrate,  where dissipation to the substrate continuum  is  eliminated by engineering  the geometric parameters. Pivotal BIC-based photonic components are demonstrated, including waveguides,  microcavities,  directional  couplers,  and  modulators.  Therefore,  this  work presents the critical step of photonic integrated circuits in the continuum, and enables the exploration of new single-crystal materials on an integrated photonic platform without the fabrication challenges of patterning the single-crystal materials. The demonstrated lithium niobate platform will facilitate development of functional photonic integrated circuits for optical  communications,  nonlinear  optics  at  the  single  photon  level  as  well  as  scalable photonic quantum information processors.

Solved from the Schrödinger equation for a particle in a finite potential well, the wavefunctions with the corresponding eigenenergy inside the potential well can be square integrable, and they are known as the bound states of the quantum system. Some other states, with their eigenenergy above the potential well and the wavefunction spreading to infinity, are known as continuous states. If the eigenenergy of a bound state is outside the band of the continuous states, e.g., the potential of the well is below that of the environment, the wavefunction is localized without energy dissipation. Using  the  similarity  between  the  Schrödinger  equation  and  the  Helmholtz  equation 1,2 , the refractive index n of a material determines the potential for photons as n k 2 2 0 , where k 0 is the light's wave number in the vacuum. Therefore, a structure that supports bound photonic states should be made  of  a  material  that  has  a  refractive  index  higher  than  the  environment.  The  photonic architectures following this rule have laid the foundations for photonics and optoelectronics, such as optical fibers and photonic integrated circuits (PICs) that have been supporting telecommunications, information processing, and quantum technologies.

In contrast to this conventional wisdom, bound states in the continuum (BICs), which were first proposed  by  von  Neumann  and  Wigner  in  1929 ,  refer  to  a  type  of  eigenstates  whose 3 wavefunctions are square integrable with the corresponding eigenenergy above the potential well. Such counterintuitive phenomena are of fundamental importance in quantum mechanics  and have 4 been discovered in acoustics 5-9 , electronics 10-15 , and photonics 16-29 . Although the BIC mechanism promises  the  confining  and  routing  of  photons  without  using  a  high-refractive-index  material surrounded by low-refractive-index environment, the existing photonic BICs are all realized in the conventional architectures. Recently, the photonic BICs that exist in low-refractive-index PICs on a high-refractive-index substrate have been theoretically proposed 19 . Such a new configuration of photonic BIC breaks through the fundamental limitation of photonic architectures, allowing the

exploration of high-refractive-index dielectric materials on an integrated platform without the need of patterning micro- or nanostructures in these materials.

## Results

Here,  we  experimentally  demonstrate  a  fundamentally  new  architecture  of  PIC,  where  the photons  in  a  propagating  bound  mode  are  laterally  confined,  routed,  and  manipulated  in  the continuum. The propagation loss of the bound photonic mode in the high-refractive-index substrate is minimized by engineering the geometry of the microstructures made in the low-refractive-index material.  Various  types  of  photonic  devices  for  this  new  type  of  PIC,  which  are  essential  for constructing  on-chip  functional  PIC  networks,  are  experimentally  demonstrated.  Integrated microcavities also exhibit the BIC effect and achieve ultrahigh quality ( Q ) factors, which is the first demonstration of cavities with three-dimensional (3D) confinement in the continuum to the best of our knowledge. This new PIC architecture by the BIC mechanism is simple and generic, allowing PICs with flexible choice of materials, such as lithium niobate (LiNbO3), yttrium iron garnet (YIG), barium borate (BBO), yttrium aluminum garnet (YAG), and diamond, which are single-crystal dielectrics with excellent optical properties but challenging in nanofabrication.

Figure 1a is a conceptual illustration of the PIC in the continuum, where the PIC is constructed by patterning a low-refractive-index material atop instead of patterning the high-refractive-index single-crystal  substrate  (e.g.,  LiNbO3-on-insulator  wafer),  and  photons  can  be  concentrated predominantly in the single crystal (e.g., LiNbO3). The mechanism of lateral confinement of light in  a  channel  waveguide  is  a  conventional  higher-effective-index  channel  in  the  LiNbO3  as illustrated  in  the  effective  refractive  index  distributions  in  Fig.  1b  (also  see  Supplementary Information). The low-refractive-index material is patterned in the lateral direction ( y direction), renders a high-effective-index channel for the transverse confinement of the transverse-electric

(TE) and transverse-magnetic (TM) polarizations. Careful engineering is required to ensure that the optical power in the fundamental TM mode (i.e., the bound mode as shown in Fig. 1e), whose eigenfrequency lies in the continuum of the TE modes (Fig. 1d), does not dissipate to the TE modes. Due to the broken translational symmetry in the z direction,  the  TM  bound  mode  can interact with the TE continuous modes, resulting in energy dissipation of the former. Figure 1c shows a typical dispersion diagram of a straight waveguide for both the TM bound mode (blue surface) and the TE continuous modes (red surface). The intersecting line of the two surfaces indicates the phase matching between the TE continuous modes and the TM bound mode, which means that the TM bound mode embedded in the TE continuous spectrum can always match the dissipative waves in the continuum, leading to high loss for the TM bound mode.

In this paper we harness the BIC mechanism to avoid the dissipation of photons in the TM bound mode  to  the  TE  continuum  through  the  destructive  interference  between  different  coupling channels. The attenuation length of the TM bound mode in a straight waveguide can be expressed as L ∝ w 2 /sin ( 2 kyw /2), with ky the y component of the wave vector of the TE continuous mode which matches that of the TM bound mode 19 . When kyw is a multiple of 2π, L approaches infinity and  the  BIC  is  obtained  correspondingly.  In  Fig.  1c,  the  green  dot  and  triangle  represent respectively the non-BIC and BIC conditions, where their modal profiles are plotted in Figs. 1f and  1g,  respectively.  For  a  non-BIC  state  (Fig.  1f),  the  electric  field  extends  in  the  substrate, resulting in dissipation of the propagating photons. In contrast, a BIC state (Fig. 1g) exhibits only localized  electric  field  in  the  substrate,  resulting  in  lossless  propagation  of  the  photons  in  the continuum.

To demonstrate the key features of BIC in our PIC architecture, we first consider the elementary photonic structures. All the numerical and experimental results in this paper and the

Supplementary Information are based on a LiNbO3-on-insulator wafer structure as illustrated in Fig. 1a, where the thicknesses of the LiNbO3 layer, the buried silicon oxide underneath, and the organic polymer atop are 300 nm, 2 μm, and 500 nm, respectively, unless otherwise noted. Figure 2b shows the loss rate of the TM bound mode propagating in a straight waveguide (Fig. 2a) as a function of the waveguide width w and the wavelength λ . The loss reduces dramatically at certain geometric parameters where the TM bound mode is totally decoupled from the TE continuous modes, becoming the desired BIC. As shown in Fig. 2c, the tolerance of waveguide width to maintain the loss rate below 1 dB/cm is as large as 300 nm, which can confidently be achieved with state-of-the-art nanofabrication techniques. Waveguides with a larger width also allow small propagation loss of the TM bound mode due to weak coupling to the TE continuous modes, albeit at the expense of looser confinement of photons. In addition, the TM bound mode can maintain ultralow loss in a large wavelength range as shown in the inset of Fig. 2c. This is attributed to small structural dispersion as the light is mainly confined to the LiNbO3 thin film that extends in the y direction.

To route photons on a chip, bent waveguides (Fig. 2d) are indispensable for joining various elements of PICs and for constructing microcavities. Similar to their straight counterparts, the interaction  between  the  bound  and  continuous  modes  originates  from  the  waveguide  edges. Dissipation of the TM bound mode to the TE continuum in the high-refractive-index slab can be estimated  from  | Jq ( nk R 0 )  -ξ Jq ( nk 0 ( R -wb ))|,  where Jq is  the q th  Bessel  function  with q the azimuthal mode number  19 . Here, the coupling to the continuum not only depends on the geometric parameters (waveguide width wb and bend radius Rb ), but also is related to ξ , the ratio of electric field intensity at the two edges of the waveguide. Figure 2e shows the bending loss at 1.55 μm as

- a function of wb and Rb . The BIC can be obtained for certain combinations of parameters (dark regions), where near-zero bending loss can be achieved with large fabrication tolerance.

Microcavities  of  high  optical Q factors  play  an  important  role  in  many  integrated  photonic applications. For microring cavities, the bending loss of the propagating TM bound mode is the same as that for the bent waveguides. For microdisk cavities, there is only one edge where the dissipation occurs, so the bending loss of the propagating TM bound mode can be estimated by | Jq ( nk R 0 )|. Figure 2f shows the intrinsic Q factor of microdisk cavities as a function of the disk radius. The Q factor approaches infinity when the BIC condition is satisfied. With the capability of  achieving ultrahigh Q factors,  the  microcavities  in  the  continuum  also  provide  a scheme of controlling the Q factors without affecting other on-chip devices fabricated in the same run. These cavities can maintain an ultrahigh Q factor (&gt;10 ) with large tolerance of geometric parameters 5 and wavelength near the conditions for BICs (see Supplementary Information). It should be noted that although the loss to the substrate continuum can be eliminated by using the principle of BIC, the typical loss to the free space cannot be avoided. This is consistent with the no-go theorem for the  BIC  in  compact  photonic  structures 30 .  Increasing  exponentially  with  the  bend  radius,  the bending-loss-limited Q factor can be regarded as infinity when the bend radius is sufficiently large. Therefore, when the BIC is obtained in practical experiments, the dissipation of photons will be limited only by the material absorption and fabrication imperfection, rather than the radiation loss to the substrate.

To  experimentally  demonstrate  the  BICs  in  such  a  PIC  architecture,  we  fabricated  and characterized the basic elements of PICs on a LiNbO3-on-insulator platform. A 500-nm-thick ebeam resist (ZEP520A) was adopted as the upper low-refractive-index material such that only one step  of  e-beam  lithography  was  sufficient  and  no  further  etching  process  was  required  for  the

fabrication. The photonic devices were characterized by coupling light from an optical fiber into and out of the PICs via grating couplers. The grating couplers were designed to be polarization sensitive so that they also served as mode selectors 31 , enabling highly efficient excitation of the fundamental  TM  bound  modes  in  the  PICs.  The  propagation  loss  of  straight  waveguides  was extracted from the transmission of waveguides with different lengths, as shown in Fig. 3a. The measured propagation loss (Fig. 3b) shows oscillation as a function of the waveguide width w and reduces to near zero (two orders of magnitude lower than the maxima) for certain parameters, which agrees well with the theoretical prediction for the BICs (Fig. 2b). The bent waveguides were characterized by measuring the transmission from the devices as shown in Fig. 3c, from which the bending loss was extracted (see Supplementary Information). The bending loss as a function of the bend radius Rb and waveguide width wb is plotted in Figs. 3d and 3e, respectively, which agrees with the theoretical prediction for the BICs (Fig. 2e). To demonstrate 3D confinement of photons based on BIC, we also fabricated microdisk and microring cavities. The modal properties were characterized by measuring the transmission spectra from a waveguide evanescently coupled with the cavity. The dependence of the intrinsic Q factors of cavity resonance around 1,550 nm on disk radius Rd (Fig. 3g) shows excellent agreement between the simulated and experimental results, which confirms the achievement of BIC in photonic microcavities. The Q factor saturates at a finite value, which is attributed to the material absorption (see Supplementary Information). Meanwhile, the measured transmission spectrum of an undercoupled microring cavity fabricated on a 400-nm LiNbO3-on-insulator wafer (Fig. 3h) indicates that the demonstrated microcavities can support highQ resonances with high extinction over a broad bandwidth. The zoomed-in spectra in Fig. 3i indicate the loaded and intrinsic Q factors are 2.2 × 10  and 5.8 × 10 , respectively. 5 5

In contrast to the photonic BICs in 1D or 2D configurations, the demonstrated BIC in our new architecture  allows  for  construction  of  fully  functional  PICs.  In  addition  to  waveguides  and microcavities, the multiport components including directional couplers (Fig. 4a), Mach-Zehnder interferometers (MZIs, Fig. 4c), and electro-optic modulators (Fig. 4e) are the kernel components of a scalable PIC. The transmission spectra of a fabricated directional coupler (Fig. 4b) indicate that light can efficiently be delivered from one port to another in the wavelength range of 1,4501,600 nm. Such a broad operating bandwidth is an advantage of the BIC-based PIC architecture, which is attributed to the small structural dispersion. Figure 4d shows the measured transmission spectrum of a MZI (Fig. 4c), which is constructed from two 3-dB power splitters. The length difference between the two arms of the MZI leads to the beating pattern in the spectrum, where the large extinction ratio indicates that the 3-dB power splitters in the MZI can divide optical power evenly. LiNbO3 is well known for its large electro-optic coefficients, which allow for active tuning and reconfiguration of PICs. As a proof of concept, we fabricated electrodes together with the MZI to make an electro-optic modulator as shown in Fig. 4e, where the inset is a scanning electron microscope (SEM) image zoomed in at the electrodes. When a voltage is applied to the electrodes, the refractive index of LiNbO3 changes, leading to a variation of the effective refractive index of the BIC. Consequently, we can tune the output power of the MZI due to the varied phase difference of the two arms. The minimal voltage for completely switching the output power between on and off is referred to as the half-wave voltage ( V π ), which is ~16 V for a 5-mm-long MZI modulator with an extinction ratio of 15 dB (Fig. 4f). Figure 4g shows the temporal response of the MZI electro-optic  modulator,  indicating  the  modulation  speed  can  be  higher  than  100  Mbps  (see Supplementary Information). Such devices can be used for manipulating the frequency properties

of  photons  on  a  chip,  and  the  electro-optic  interaction  can  be  enhanced  further  in  highQ microcavities, which is promising for achieving the microwave-to-optical frequency conversion 32 .

## Discussion

The demonstrated PICs in the continuum break the refractive index limitation of materials, and thus  enable  a  new  class  of  integrated  photonic  devices  where  photons  are  confined  to  lowrefractive-index microstructures on high-refractive-index substrates. Due to the generic mechanism of BICs,  the hybrid photonic architecture consisting of polymer on single-crystal thin film 19 presented here can be extended directly to other functional materials, which promises a solution  to  the  key  challenges  encountered  in  traditional  integrated  photonics.  On  one  hand, polymers are compatible with dye molecules as well as quantum dots, allowing the realization of on-chip optical amplifiers and low-threshold lasers at various wavelengths. On the other hand, single-crystal materials can provide excellent linear and nonlinear optical properties. The lithium niobate  platform  demonstrated  in  this  work  will  facilitate  development  of  functional  photonic integrated circuits for optical communications, nonlinear optics at the single photon level as well as scalable photonic quantum information processors. For example, for the demonstrated LiNbO3 microring cavities, the strong second-order optical nonlinearity of LiNbO3 predicts a single-photon nonlinear coupling strength of ~2.4 MHz (see Supplementary Information), which is attractive for optical quantum state engineering 33 . The PICs based on low-loss magneto-optic materials (e.g., YIG) will enable integrated nonreciprocal devices and also allow for the study of strong photonmagnon interaction 34 . Integrating laser crystals (e.g., BBO and YAG) with the BIC-based highQ low-modal-volume microcavities will create high-performance lasing or wavelength-conversion devices. Especially, the diamond containing the spin systems holds great potential for quantum memory and sensing at room temperature 35 ,  and  our  PIC  architecture  can  enhance  the  optical

readout  and  control  of  the  spins.  By  avoiding  etching  the  high-refractive-index  single-crystal materials, the BIC-based PICs have opened a new avenue in integrated photonics and also laid the foundation  for  exploring  new  optical  functional  materials  on  a  chip  which  shall  bring  many unprecedented applications in classical and quantum photonics.

## Methods

Methods  including  fabrication,  characterization,  and  any  associated  accession  codes  are available in the Supplementary Information.

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## Acknowledgements

This work was supported by the Early Career Scheme (24208915) and the General Research Fund (14208717, 14206318) sponsored by the Research Grants Council of Hong Kong, and by the NSFC/RGC Joint Research Scheme (N\_CUHK415/15) sponsored by the Research Grants Council of Hong Kong and the National Natural Science Foundation of China. C.-L.Z. was supported by Anhui Initiative in Quantum Information Technologies (AHY130000).

## Authors contributions

Z.Y. performed the theoretical modeling, numerical simulation, device design, fabrication, and characterization  under  the  supervision  of  X.S.;  X.X.  assisted  with  device  fabrication;  C.-L.Z. provided theoretical guidance; Z.Y. and X.S. wrote the manuscript with the assistance of all the coauthors.

## Competing interests

The authors declare no competing interests.

Fig.  1  |  BIC-based  photonic  integrated  circuit  and  its  modal  properties. a, Conceptual

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00429v1-figure-c2126c35-772f-46f6-963e-7339d355637e.jpg)

illustration of the proposed photonic circuit in the continuum. The bottom layer (gray) is silica substrate, the center layer (dark pink) is the single-crystal dielectric material (LiNbO3), and the top layer consists of patterned low-index organic polymer (purple) and metal (yellow). The metal is used as electrodes for modulating guided photons at high speeds. b, Effective refractive index distributions for light propagating in the routing waveguides in a where the waveguide width w = 1.8 μm. c, Dispersion diagram of the TM bound mode (blue surface) and the TE continuous modes (red surface). The intersecting line of the two surfaces represents phase matching of the TM bound mode and the TE continuous modes, where the former can be coupled with the latter and dissipate energy into the continuum. d&amp;e, Electric field distributions of a TE continuous mode ( d ) and the TM bound mode ( ) corresponding to the red and blue surfaces in e c , respectively. f&amp;g, Log-scale plots of the cross-sectional Ez profiles of a general non-BIC mode ( ) and a special BIC mode ( f g ), which correspond to the green dot and green triangle on the intersecting line of the two surfaces in

.

dB/cm

Fig. 2 | Theoretical and numerical results of BICs. a, Illustration of a straight waveguide in the continuum, where w denotes the width of the waveguide. b, Propagation loss of the TM bound mode in the straight waveguide as a function of the width w and wavelength λ . The propagation loss  approaches  zero  (black  regions)  for  certain  combinations  of  parameters  where  the  BIC condition is satisfied. c, Propagation loss as a function of the waveguide width w for light at the wavelength of  1.50,  1.55,  and  1.60  μm.  The inset  plots  propagation  loss  as  a  function  of  the wavelength λ with w = 1.8 and 3.6 μm. Due to the low structural dispersion, the propagation loss can maintain below 2 dB/cm over a large bandwidth from 1.40 to 1.65 μm. d, Illustration of a bent waveguide, where wb and Rb denote the width and radius of the bent waveguide, respectively. e, Bending loss as a function of the radius Rb and width wb . Similar to the straight waveguide, the bending loss approaches zero for certain combinations of parameters where the BIC condition is satisfied. f, Intrinsic Q factor of microdisk cavities as a function of the disk radius Rd . The Q factor approaches maxima that are limited only by the radiation loss for specific Rd values where the BIC condition is satisfied.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00429v1-figure-187ed25b-ccc1-42b2-9dcc-e8b859bfd66f.jpg)

a

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00429v1-figure-7420cec2-0e0a-4a8b-8344-64ce9c2c08cb.jpg)

c

Fig.  3  |  Experimental demonstration of BICs. a, Straight  waveguides with in/output grating

couplers. Devices with different waveguide lengths and identical in/output grating couplers were fabricated on the same chip to extract the propagation loss of the waveguides. b, Simulated and measured  propagation  loss  of  straight  waveguides  as  a  function  of  the  width. c, Devices  for measuring  the  bending  loss  in  bent  waveguides.  The  upper  and  lower  devices  have  identical in/output grating couplers and the same length of straight waveguides, but different lengths of the bending sections. d&amp;e, Simulated and measured bending loss as a function of the bend radius Rb and width wb . f, Microdisk cavity,  evanescently  coupled with a bus waveguide. g, Intrinsic Q factors of the cavity resonances as a function of the disk radius (blue solid line: simulated curve

without consideration of loss; black dashed line: simulated curve with consideration of loss from material  absorption  and  fabrication  imperfection;  red  dots:  measured  data). h, Measured transmission spectrum of a microring cavity whose geometric parameters satisfy the BIC condition for light at 1,550 nm. Resonances of very high Q factors with high extinction are achieved over a large wavelength range. i, Zoomed-in spectra of two typical resonances. The loaded and intrinsic Q factors are 2.2 × 10  and 5.8 × 10 , respectively, based on the Lorentzian fitting. 5 5

c

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00429v1-figure-ad3ff8f3-4d57-4553-9b28-e7f282c8e8ef.jpg)

e

Fig. 4 | Photonic devices based on BICs. a, Optical microscope image of a directional coupler.

b, Normalized transmission spectra of the coupled and through ports of the directional coupler, which show high coupling efficiency and high extinction ratio in the range of 1450 to 1600 nm. c&amp;d, Optical  microscope  image  and  the  measured  transmission  spectrum  of  a  Mach-Zehnder interferometer (MZI). e, Optical microscope image of a MZI electro-optic modulator. The inset is a  false-color  SEM  image  zoomed in at the waveguide and the nearby electrodes. f, Measured optical output power of the MZI electro-optic modulator for light at the wavelength of 1,550 nm as a function of the applied DC voltage, indicating the V π of the modulator to be ~16 V. g, Temporal response of the MZI electro-optic modulator.
Zejie Yu Xiang Xi Jingwen Ma Hon Ki Tsang Chang-Ling Zou Xiankai Sun
Photonic integrated circuits in the continuum
Waves that are perfectly confined in the continuous spectrum of radiating
waves without interaction with them are known as bound states in the continuum
(BICs). Despite recent discoveries of BICs in nanophotonics, full routing and
control of BICs are yet to be explored. Here, we experimentally demonstrate
BICs in a fundamentally new photonic architecture by patterning a
low-refractive-index material on a high-refractive-index substrate, where
dissipation to the substrate continuum is eliminated by engineering the
geometric parameters. Pivotal BIC-based photonic components are demonstrated,
including waveguides, microcavities, directional couplers, and modulators.
Therefore, this work presents the critical step of photonic integrated circuits
in the continuum, and enables the exploration of new single-crystal materials
on an integrated photonic platform without the fabrication challenges of
patterning the single-crystal materials. The demonstrated lithium niobate
platform will facilitate development of functional photonic integrated circuits
for optical communications, nonlinear optics at the single photon level as well
as scalable photonic quantum information processors.