## Valley Phenomena in the Candidate Phase Change Material WSe2(1-x)Te2x

Sean M. Oliver 1,2 , Joshua Young 3 , Sergiy Krylyuk 4,5 , Thomas L. Reinecke 6 , Albert V. Davydov 4 , Patrick M. Vora 1,2,*

1 Department of Physics and Astronomy, George Mason University, Fairfax, VA, USA

2 Quantum Materials Center, George Mason University, Fairfax, VA, USA

3 Department of Physics, Applied Physics and Astronomy, Binghamton University, Vestal, NY, USA

4 Functional Nanostructured Materials Group, National Institute of Standards and Technology, Gaithersburg, MD, USA

5 Theiss Research, La Jolla, CA, USA

6 Naval Research Laboratory, Washington, DC, USA

*Author to whom correspondence should be addressed

## Email: pvora@gmu.edu

Keywords: transition  metal  dichalcogenide,  alloy,  phase  transition,  valley  polarization,  valley  coherence,  Raman spectroscopy, photoluminescence spectroscopy, temperature dependence, low temperature

## Abstract

Alloyed  transition  metal  dichalcogenides  provide  an  opportunity  for  coupling  band  engineering  with valleytronic phenomena in an atomically-thin platform. However, valley properties in alloys remain largely unexplored. We investigate the valley degree of freedom in monolayer alloys of the phase change candidate material WSe2(1-x)Te2x. Low temperature Raman measurements track the alloy-induced transition from the semiconducting 1H phase of WSe2 to the semimetallic 1Td phase of WTe2. We correlate these observations with density functional theory calculations and identify new Raman modes from W-Te vibrations in the 1H alloy phase. Photoluminescence measurements show ultra-low energy emission features that highlight alloy disorder arising from the large W-Te bond lengths. Interestingly, valley polarization and coherence in alloys survive at high Te compositions and are more robust against temperature than in WSe2. These findings illustrate the persistence of valley properties in alloys with highly dissimilar parent compounds and suggest band engineering can be utilized for valleytronic devices.

## Introduction

The valley contrasting properties of monolayer semiconducting transition metal dichalcogenides (TMDs) provide the possibility  of  manipulating  information  using  the  valley  pseudospin 1-4 in direct  analogy  to  spintronics.   Devices  that  employ  this  schema  for  computation,  commonly 5 referred to as valleytronics, benefit from optical or electrical manipulation of the valley index, spin-valley locking, low power consumption, and the absence of Joule heating. 1,3 These advantages have stimulated vigorous investigations into the properties of two-dimensional (2D) semiconducting TMDs with an emphasis on exploring the optical interband selection rules that connect photon polarization to valley index. 1-4

The  first  studies  of  monolayer  TMDs  focused  solely  on  the  photoluminescence  (PL)  from molybdenum disulfide (MoS2), 6,7 however attention shifted to valley-dependent studies. 8,9 Soon after, monolayer tungsten diselenide (WSe2) was found to be a superior TMD for valleytronics, exhibiting both exciton valley polarization and valley coherence. 10-17 Valley polarization describes the probability of an exciton created in a valley to remain there until recombination, while valley coherence quantifies the probability of an exciton to remain in a superposition state of K and K  valleys before recombining. At low temperature, the neutral exciton (X ) in bare WSe2 monolayers 0 exhibits a valley polarization ranging from 40 - 70 % depending on the laser energy. 10,12,18 The depolarization  of  valley  excitons  is  believed  to  be  governed  by  a  combination  of  intervalley electron-hole exchange interactions, 9,19 phonon-assisted intervalley  scattering, 8,20 and  Coulomb screening  of  the  exchange  interaction. 21,22 Additionally,  WSe2  holds  the  record  for  the  largest degree of X  valley coherence in bare monolayers (≈40 % at cryogenic temperatures). 0 10

Alloying  can  increase  the  technological  potential  of  valleytronic  TMDs  by  combining  valley contrasting properties with band engineering. 23 Furthermore, alloys of structurally distinct TMDs may also enable phase change memory technologies 24-26 by reducing the energy barrier between semiconducting and semimetallic states. 27 Few studies, however, have explored valley phenomena in alloys despite the heavy interest in this field. The first exploration of valley properties in alloys focused on Mo1-xWxSe2 at 5 K and found that there was a transition from the intrinsic valley polarization of MoSe2 to WSe2 as the transition metal content was varied. 28 Experiments on a WS0.6Se1.4 alloy demonstrated a valley polarization of ≈31 % at 14 K, which was much lower than that of both WS2 and WSe2. 29 A recent study of WSxTe2-x found that the room temperature valley

polarization increased from 3 % in WS2 to 37 % in an unspecified alloy composition. 30 The limited information  regarding  valley  polarization  in  alloyed  TMDs  is  a  serious  oversight  as  future valleytronics technologies will likely rely heavily on band engineering.

In  this  study,  we  examine  the  low-temperature  optical  properties  of  monolayer  WSe2(1-x)Te2x, where the endpoints are the valleytronic semiconductor 1H-WSe2 and the topological semimetal 1Td-WTe2. Prior studies of this alloy system were performed at 300 K and focused on unpolarized optical measurements 31 as well as electronic transport characterization. 32 Our study is unique in that  it  focuses  on  the  impact  of  alloying  on  the  valley  excitons  of  WSe2(1-x)Te2x    monolayers encapsulated  in  hexagonal  boron  nitride  (hBN)   We  ensure  good  interfacial  contact  in  the . heterostructure by cleaning with the nano-squeegee method, 33 which substantially improves the valley polarization. Raman measurements at 5 K show that increasing Te composition leads to the shifting and splitting of vibrational modes as well as the appearance of new modes unique to alloys. Polarization-resolved  Raman  measurements  coupled  with  density  functional  theory  (DFT) calculations of theoretical 1H-WTe2 phase allow us to assign these alloy-only features as resulting from W-Te vibrations in the 1H  WSe2(1-x)Te2x  structure.  Temperature-dependent,  polarizationresolved PL measurements of the 1H-phase alloys demonstrate band gap tunability alongside the presence of new ultra-low energy emission features. We suggest these features are from deep midgap states that originate from the large difference in the W-Se and W-Te bond lengths. Despite the presence of structural disorder in the lattice, valley polarization is found to survive the alloying process for x ≤ 0.14 while valley coherence is present for alloys x ≤ 0.37, and interestingly we demonstrate that alloys have the ability to sustain these valley properties at higher temperatures than pure WSe2. These findings illustrate the persistence of valley phenomena in significantly disordered  alloys  and  point  the  way  towards  optimization  of  TMDs  for  novel  phase  change memories that naturally integrate with valleytronic devices.

## Results

## WSe2(1-x)Te2x Structure and Vibrational Modes

Interpretation of our experimental data is guided by DFT modeling of the WSe2(1-x)Te2x phase diagram. The crystal structure of the endpoint compounds 1H-WSe2 (x = 0) and 1Td-WTe2 (x = 1) are shown in Figs. 1a and 1b . Regarding crystal structure notation, we refer to Td monolayers as

being in the 1Td phase. Previously, Td and 1T' notations have been used interchangeably for Td monolayers since the only difference between these structures in the bulk was believed to be a slight shift of layers relative to one another. Since the Td structure contains three layers in its unit cell while the 1T' structure contains one layer, it was assumed that monolayers isolated from a bulk Td crystal were in the 1T' phase. We make the 1Td notation distinction in light of a recent report that has indicated, unlike the 1T' phase, inversion symmetry is broken in the monolayer Td lattice. 34 We find from our DFT calculations, in agreement with previous studies, 31,32 that the 1H phase is stable with a Te concentration of x ≤ 0.4, which we illustrate in Fig. 1c . For x ≥ 0.5, 1Td becomes the lowest energy phase. As a result, we expect valleytronic optical properties for the 1H alloys  corresponding  to  x  ≤  0.4  and  semimetallic  behaviors  for  the  1Td  alloys  x  ≥  0.5.  These predictions are consistent with our Raman and PL measurements described in detail below.

Prior to optical measurements, monolayers are encapsulated in an hBN heterostructure, as shown in Fig. 1d , to protect from the degradative effects due to exposure to the atmosphere and to provide a uniform dielectric environment. 35 We explore the effects of alloying on crystal structure through low-temperature Raman spectroscopy of hBN-encapsulated monolayer WSe2(1-x)Te2x, as shown in Fig. 2a . This Raman data is fit with multiple Lorentzian peaks to extract mode frequencies, which are plotted in Fig. 2b with alloy composition x. Examples of Lorentzian fits to Raman data for select alloys can be seen in Supplementary Fig. S1 .

It is instructive to first examine the properties of the endpoints WSe2 (x = 0) and WTe2 (x = 1) that appear in blue in Fig. 2a . WSe2, which naturally crystallizes in the 1H phase, is in the D3h point group and exhibits modes with 𝐴1 ′ and 𝐸 ′ symmetries. In agreement with prior observations, 36,37 we identify eight Raman peaks in WSe2 at 132 cm -1 , 223 cm -1 , 240 cm -1 , 250 cm -1 , 264 cm -1 , 351 cm -1 , 378 cm -1 , and 401 cm -1 . These modes and their symmetries are summarized in Table 1 . The dominant feature in the WSe2 Raman spectra at 250 cm -1 (labeled peak 4 in Figs. 2a and 2b ) is an 𝐴1 ′ symmetry mode where the transition metal is fixed and the chalcogens vibrate perpendicular to the basal plane. 38,39 In monolayer WSe2, this mode overlaps with an 𝐸 ′ symmetry mode where the chalcogen and transition metal layers both vibrate in-plane, but out of phase. 38,39 These findings agree with prior calculations 36,38,39 as well as our own DFT modeling of the WSe2 phonon band structure that predicts the 0 K frequency of the dominant 𝐴1 ′ mode at 239 cm -1 and the 𝐸 ′ mode at 236 cm -1 ( Fig. 2c ). Additional monolayer WSe2 modes are enhanced at 5 K, which are usually

assigned  as  disorder-activated  finite  momentum  phonons,  combination  modes,  or  difference modes. 36,37,40 We  find  that  previous  assignments  of  these  features  to  Raman  difference  modes conflict with our low-temperature data. Difference modes originate from a two-phonon process where one phonon is absorbed (anti-Stokes process) and another is created (Stokes process). Since this requires the presence of a phonon before photoexcitation, its occurrence is expected to follow a  Boltzmann-like  temperature  dependence  that  disappears  at  cryogenic  temperatures. 41 The presence of these so-called difference modes in our measurements at 5 K calls this assignment into question. Thus, it is more likely that these features are combination modes for which there are many possible assignments ( Table 1 ), however there is presently no explanation for the mode at 132 cm -1 .

We now discuss the Raman spectrum of WTe2, which is presented in Fig. 2a .  Our attempts to exfoliate large-area monolayers of WTe2 were met with limited success, which may be due to the rapid oxidation rate of this material. 42 In contrast, we found it straightforward to achieve largearea bilayer WTe2, which is known to be less susceptible to oxidation. 42 The Raman spectra of bilayer  and  monolayer  WTe2  are  nearly  identical, 43 which  lets  us  safely  use  bilayer  WTe2  to discriminate between 1Td- and 1H- WSe2(1-x)Te2x. Bilayer WTe2 (Td phase) belongs to the C2v point group, and so only 𝐴1 and 𝐴2 symmetry modes can be observed. 44 Five peaks in the 70 - 425 cm -1 range are present at 87 cm -1 , 107 cm -1 , 166 cm -1 , 218 cm -1 , and 327 cm -1 and are labeled with letters  in Figs.  2a and 2b .  Assignment  of  the  mode  symmetries  is  based  on  prior  studies  of WTe2 43,45 and  are  included  in Table 1 .  The  feature  at  327  cm -1 ,  labeled  peak  e,  has  not  been previously observed, and we assign it as either a second-order overtone of the 166 cm -1 𝐴1 mode (peak c) or a combination of the 107 cm -1 𝐴2 and 218 cm -1 𝐴1 modes (peaks b and d, respectively).

Low-temperature Raman measurements of the alloys (black curves of Fig. 2a ) reveal fascinating new details regarding the vibrational modes that were not observed in Ref. 31 owing to thermal broadening at 300 K (see Supplementary Fig. S2 for  comparison of 5 K and 300 K spectra). Alloys with x ≤ 0.37 are in the 1H phase, which is further supported by the presence of PL in these samples to be discussed later, and exhibit complex mode structures in the ≈230 - 275 cm -1 range. Polarization-resolved Raman measurements ( Supplementary Fig. S3 ) reveal that the dominant WSe2 𝐴1 ′ mode at 250 cm -1 splits into two peaks at 244 cm -1 and 253 cm -1 for x = 0.04 (see red points in Fig. 2b ). This differs from studies of WS2(1-x)Se2x where this primary out-of-plane WSe2

feature typically only shifts with alloying. 46,47 The splitting of out-of-plane vibrational modes with alloying, however, has been seen in MoSxSe2-x monolayers 48,49 and has been carefully documented in  few-layer  MoSxSe2-x. 50 Jadczak  et  al.  attributed  the  splitting  of  this  feature  in  alloys  to  the polarization  of  the  alloy  unit  cell  due  to  the  substitution  of  heavier  chalcogens  that  introduce different force constants in the lattice. 50 Thus, due to the splitting of the primary 𝐴1 ′ mode, we find that the 𝐸 ′ mode is distinguishable from the 𝐴1 ′ mode in alloy monolayers and only slightly shifts to lower frequencies with increasing x.

Several other WSe2-like vibrational modes show sensitivity to alloying for 1H-phase compositions x  ≤  0.37.  Second-order  finite  momentum  peaks  6,  7,  and  8  of Figs.  2a and 2b shift  to  lower frequencies  and  broaden  with  increasing  alloy  composition.  This  alloy  data  may  clarify disagreements in the literature on whether 𝐴1 ′ or 𝐸 ′ phonons are the dominant contributor to these higher-order modes. 36,37 The band predictions of 1H-WSe2 in Fig. 2c show both branches of the 𝐸 ′ mode that originate at 236 cm -1 shift to lower frequencies away from the Γ point. This behavior is opposite to that of the 𝐴1 ′ mode, which originates at 239 cm -1 and shifts to higher frequencies away from the Γ point. Since peaks 6, 7, and 8 broaden asymmetrically on the lower frequency side of their centers as x is increased, this may indicate that the 𝐸 ′ mode, rather than the 𝐴1 ′ mode, contributes to these higher-order processes. The shifting and broadening of the WSe2 modes for compositions x ≤ 0.37 indicate that alloying introduces significant disorder into the lattice  but globally maintains the 1H phase.

A particularly interesting alloy-induced feature resolved in 1H samples is the Raman peak labeled D1 at 191 cm -1 in x = 0.04 (red points in Fig. 2b ). This feature splits into the two peaks labeled D2 and D3 at 190 cm -1 and 200 cm -1 ,  respectively, as x is increased.  Polarization-resolved Raman measurements ( Supplementary Fig. S3 ) indicate that these features have 𝐴1 ′ symmetry and DFT calculations of the 1H-WSe2 phonon band structure ( Fig. 2c ) show no 𝐴1 ′ phonon modes present in this range. We therefore calculate the phonon band structure of metastable 1H-WTe2 phase in Fig. 2d , which predicts an 𝐴1 ′ Γ-point mode at 172 cm -1 . This mode is the closest to the observed results and so we assign the D1 peak to an 𝐴1 ′ mode arising from W-Te vibrations in the 1H WSe2(1x) Te2x alloys. We attribute its splitting to increasing force constant variations introduced into the lattice with noticeable Te content as discussed previously for the primary 𝐴1 ′ mode of WSe2. 50 Raman measurements reveal several other new peaks in the 1H alloys, which we label D4, D5, D6,

and D7 in Fig. 2b .  These polarization-independent features (see Supplementary Fig. S3 ) most likely arise from either finite momentum WSe2-like phonons or WSe2 combination modes. We exclude  difference  modes  based  on  the  use  of  low-temperature  spectroscopy  as  discussed previously. Possible assignments are 𝐸′(𝑀) for D6 and 𝐸 ′ +𝐸′(𝑀) for D7, while D4 and D5 remain unassigned but may originate from combinations of 1H-WSe2 and 1H-WTe2 modes. As WSe2(1x) Te2x transitions to the 1Td phase with alloying, the Raman spectra for x ≥ 0.79 show the two primary 𝐴1 vibrational modes of pure WTe2, labeled peaks c and d in Figs. 2a and 2b .  These features are shifted and broadened due to alloy disorder in agreement with other WTe2 alloys. 51

## Excitonic Properties

In Fig. 3 , we present temperature-dependent PL spectra for representative 1H-phase alloys. Each spectrum has been normalized by the maximum intensity and was excited with right circularly polarized  light  (σ+)  at  1.96  eV.  The  collected  PL  is  passed  through  a  waveplate/analyzer combination to select σ+ emission. At 300 K, the PL spectra show contributions from both the neutral exciton (X ) and the trion (X 0 T ). 13 Increasing the Te concentration causes both features to redshift due to the lower band gap of 1H-WTe2. 52 As temperature decreases from 300 K to 5 K, X 0 and X T sharpen, blueshift, and weaken in intensity. The latter behavior is due to the sign of the conduction band spin-orbit coupling, which makes the lowest exciton state dark (see the band schematic of WSe2 in Fig. 5a ). 53 The sign of the spin-orbit coupling is the same for all W-based TMDs 53  and so we expect no change in the optical activity of the lowest exciton state with Te substitution. The presence of broad features at lower energies compared to X  and X  originate 0 T from a combination of higher-order excitonic complexes 54 and localized exciton states from lattice defects, strain, and residual impurities introduced during fabrication. 10,13,55

We explore band gap tunability of 1H-WSe2(1-x)Te2x by extracting X  energy as a  function of 0 temperature,  which  is  plotted  in Fig.  4a .  This  data  is  fit  with  a  semi-empirical  formula  for temperature-dependent optical band gaps given by 56

$$E _ { g } ( T ) = E _ { 0 } - S \langle \hbar { \omega } \rangle \left [ c o t h \left ( \frac { \langle \hbar { \omega } \rangle } { 2 k T } \right ) - 1 \right ],$$

where 𝐸0 is the gap at absolute zero, S is a dimensionless electron-phonon coupling parameter, 〈ℏ𝜔〉 is  an  average phonon energy, and k is  the  Boltzmann constant. This formula models the

reduction  in  band  gap  with  increasing  temperature  due  to  a  combination  of  increasing  lattice constants and exciton-phonon coupling. 56 Fits of our data to equation (1) are presented as solid lines in Fig. 4a and the compositional dependence of 𝐸0 , S , and 〈ℏ𝜔〉 from these fits are plotted in Figs. 4b-d . Figure 4b shows that 𝐸0 (i.e. X  energy) varies in 1H-WSe2(1-x)Te2x from ≈1.735 eV 0 in WSe2 to ≈1.519 eV in the x = 0.37 alloy. These experimental results agree extremely well with the optical band gaps of the alloys computed using DFT with the HSE06 exchange-correlation functional, 57,58 which predict a gap of 1.75 eV in 1H-phase WSe2 that decreases to 1.53 eV at a Te concentration of x = 0.375 (blue triangles of Fig. 4b ). At higher x the system transforms to the 1Td phase ( Supplementary Fig. S4 ) which is a semimetal. For a comparison of DFT results for the optical  band  gaps  of  all  WSe2(1-x)Te2x  monolayers  calculated  using  both  the  HSE06  and  PBE functionals and the density of states determined using the HSE06 functional, see Supplementary Fig. S4. Since the alloys are in the 1H phase only up to x = 0.37 and 1H-WTe2 does not exist in nature, we are unable to reliably determine the bowing parameter for 𝐸0 . 23 Therefore, we instead fit 𝐸0 from x = 0 to 1 with a linear function as shown by the red line in Fig. 4b . From a linear extrapolation to x = 1, we determine the 0 K optical band gap of 1H-WTe2 to be 1.15 eV.  Lastly, extracted values for S range from 1.93 - 2.24 and for 〈ℏ𝜔〉 between 4 - 16 meV (32.3 - 129 cm -1 ), and are plotted versus x in Figs. 4c and 4d .

Elaborating on the 5 K PL spectra of Fig. 3 , we find that X  appears ≈30 meV below X 0 T in our data and shifts in lockstep with the neutral exciton so that there is only weak dependence of the X 0 -X T binding energy on x ( Supplementary Fig. S5 ). Spatial PL mapping of an x = 0.33 alloy sample at 5 K indicates little variation of the intensities, energies, and linewidths of X  and X 0 T . These  maps  are  discussed  in  detail  in Supplementary  Note  1 and Supplementary Fig.  S6 . Additionally, we find evidence for excitonic transitions and exciton-phonon complexes at energies above X 0 known  to  originate  from  coupling  between  hBN  and  WSe2  in  van  der  Waals heterostructures. 59,60 A detailed discussion of these features is presented in Supplementary Note 2 and Supplementary Fig.  S7 . In  5  K  and  300  K  reflectance  measurements  presented  in Supplementary Fig. S8 , both the A and B excitons are clearly visible and the valence band spinorbit coupling is found to increase with Te incorporation.

Localized excitons are common in W-based TMDs owing to the long lifetime of the dark exciton ground states. We identify such features in all alloys and the parent compound WSe2, beginning

with an emission band ≈100 meV below X 0  hereafter referred to as L1. For all x &gt; 0.04 , L1 is accompanied by a second localized emission feature (L2) approximately ≈300 meV below X 0 ( Figs. 3c-e ).  This  feature  has  never  been  observed in  TMDs, alloyed or otherwise. L1 and L2 maintain a similar energy separation with respect to X  at all nonzero x but do exhibit variations 0 in their temperature dependent behaviors.

The new defect band L2 must originate from a disorder unique to Te-rich alloys and may be connected to the preference of WTe2 to crystallize in a 1Td structure. Scanning tunneling electron microscopy measurements and molecular dynamics (MD) simulations of a similar alloy system, WS2-xTex, 61 indicate that Te-substitution at levels approaching 15 % can substantially modify the structure of a 1H-phase alloy. The bond lengths and lattice constants of 1H-WSe2 with 1H-WTe2 are predicted to differ by ≈7 - 8 %, 61 which also leads to a mismatch between the metal-chalcogen bond angles. The MD simulations of Ref. 61 illustrate that these internal strains can lead to the displacement of Te atoms from the expected chalcogen site for concentrations as low as 8 %. These shifts lead to the compression and stretching of neighboring hexagonal rings, and in turn result in the displacement of the native chalcogen and even the W atoms. For the WS2 - WTe2 alloys studied in Ref. 61, continuing to increase the Te doping to 15 %, 20 %, and finally 25 % increased the displacements of W, S, and Te atoms, and ultimately drove the W atoms closer together in a prelude to the 1H - 1Td transition.  These Te concentrations compare favorably with the values at which we observe the presence of the L2 feature ( Fig. 3 ). The presence of such substantial atomic displacements and internal strains seems to be unique to TMD alloys that are mixtures between different structural phases. We therefore suggest that the internal strains driven by Te incorporation in 1H-phase alloys create a new band of defect states (i.e. the L2 feature) lower than those typically expected from chalcogen or transition metal vacancies (i.e. the L1 feature). 55

## Valley Phenomena

Next, we explore valley contrasting in 1H-WSe2(1-x)Te2x alloys at 5 K using 1.96 eV excitation with σ+ polarization. The schematic band structure in Fig. 5a illustrates the spin-valley polarized selection  rules  in  WSe2,  where  transitions  between  the  valence  band  and  the  second  highest conduction  band  are  σ+  (σ-)  polarized  at  the  K  (K )  point.  Any  emission  in  the  opposite  polarization  channel  is  a  sign  of  intervalley  scattering.  Valley  polarization  is  determined  by

measuring co- and cross-polarized PL spectra in the circular basis as shown in Fig. 5b . The degree of valley polarization 𝜌𝑉𝑃 for σ+ excitation is defined as 𝜌𝑉𝑃 = (𝐼σ+ -𝐼σ-)/(𝐼σ+ + 𝐼σ-) , where 𝐼 σ+  𝐼 ( σ)  is  the  intensity  of  the  collected  light  with  σ+  (σ-)  orientation.  Valley  coherence measurements are similar except measurements are carried out in a linear basis with co-polarized ( ∥ ) and cross-polarized ( ⊥ ) configurations as shown in Fig. 5c . The degree of valley coherence 𝜌𝑉𝐶 is  calculated  similarly  as 𝜌𝑉𝐶 = (𝐼∥ -𝐼⊥)/(𝐼∥ +𝐼⊥) ,  where 𝐼 ∥ ( 𝐼 ⊥ )  is  the  intensity  of  the collected light that is ∥ ( ⊥ ) to the incident light.

Alloy-dependent values of 𝜌𝑉𝑃 for X  (black squares) and X  (red circles) at 5 K are plotted in 0 T Fig. 5d . We find that 𝜌𝑉𝑃 ≈ 49 % for X 0 in WSe2, which agrees with previously reported values. 10 Achieving  this  value  required  cleaning  our  heterostructures  post-assembly  using  the  nanosqueegeeing technique. 33 This process improved the WSe2 𝜌𝑉𝑃 of  X 0 by  a  factor  of  ≈1.7,  thus increasing the signal from 29 % to 49 %, whereas it appeared to have very little effect on 𝜌𝑉𝐶 . This result illustrates the impact of contaminants on valley properties and a comparison of squeegeed and non-squeegeed alloys can be found in Supplementary Fig. S9 .

As Te is substituted into the lattice, 𝜌𝑉𝑃 first remains unchanged at x = 0.04 and then decreases to 32 % at x = 0.14 ( Fig. 5d ). For x &gt; 0.14, no valley polarization is observed. The trion exhibits a similar trend with x; 𝜌𝑉𝑃 ≈  67  % for X T in  WSe2 and is zero for x &gt; 0.14. To the best of our knowledge,  there  is  no  systematic  theory  for  understanding  valley  depolarization  from  alloy disorder.  However,  we  do  observe  an  interesting  correlation  between 𝜌𝑉𝑃 and  the  integrated intensity  ratio  of  X T /  X 0 ,  as  shown  in Supplementary Fig. S10 .  The 𝜌𝑉𝑃 X T /  X 0 integrated intensity ratio generally decreases with Te incorporation from ≈2.4 in WSe2 to ≈0.25 in x = 0.37. While there is an initial increase in the 𝜌𝑉𝑃 X T / X 0 intensity ratio from ≈2.4 in WSe2 to ≈3.8 in the x = 0.04 sample, this is most likely the result of a superior cleaned interface via the nano-squeegee method rather than an intrinsic material property. The decrease in the 𝜌𝑉𝑃 X T / X 0 intensity ratio as x is increased suggests a connection between 𝜌𝑉𝑃 and an apparent reduction in doping with increasing Te substitution. Valley coherence is only present for neutral excitons 10 and we plot 𝜌𝑉𝐶 versus x at 5 K in Fig. 5e . 𝜌𝑉𝐶 ≈ 20 % in WSe2, which is slightly lower than the literature value, 10 and decreases to ≈13 % when x = 0.04 after which point it remains essentially constant until the 1H-1Td  phase  transition.  We  note  that  valley  coherence  remains  finite  even  when  valley polarization goes to zero at large x.

Temperature dependent measurements of 𝜌𝑉𝑃 and 𝜌𝑉𝐶 for X  in 0 Fig. 6 show interesting behaviors that suggest disorder can in some cases improve valley polarization and valley coherence. In all cases for the 1H-phase alloys, we find a decrease of both quantities with increasing temperature. However, alloys exhibit  a  different  temperature  dependence  when  compared  to  WSe2 (x  =  0). Beginning with 𝜌𝑉𝑃 in Fig. 6a , we observe a sharp decrease with increasing temperature that is consistent  with  prior  examinations  of  WSe2  monolayers. 13,62 Surprisingly,  we  find  that  valley polarization remains large for the x = 0.04 alloy and can exceed that of WSe2, reaching a maximum enhancement factor of 3.5x at 100 K. While valley polarization is overall lower for the x = 0.14 alloy, it also exceeds that of WSe2 at 100 K and has the same temperature dependence as the x = 0.04 case. We note that 𝜌𝑉𝑃 of X  also shows similar temperature and alloy dependence, which T can be seen in Supplementary Fig. S11 .  This  observation  indicates  that,  counter  to  intuition, alloys  can  exhibit  valley  polarization  that  meets  or  exceeds  that  of  WSe2,  especially  at  higher temperatures.

Currently,  there  is  no  systematic  understanding  of  the  impact  of  alloy  disorder  on  valley polarization. The prevailing theories of valley polarization revolve around a balance between the mean exciton lifetime 𝜏𝑥 and  the  valley  relaxation  lifetime 𝜏𝑣 ,  which  are  parametrized  by  the relationship 𝜌𝑉𝑃 = 𝜌0 1+2(𝛾𝑣/𝛾𝑥) ,  where 𝛾𝑣 = (2𝜏𝑣 ) -1 is  the  intervalley  scattering  rate  and 𝛾𝑥 = (𝜏𝑥 ) -1 is the exciton recombination rate. 9,21 Temperature dependence enters this equation via the scattering and recombination rates, and the valley depolarization rate for excitons is determined by a combination of electron-hole exchange interactions, 9,19 intervalley phonon scattering, 8,20 and Coulomb screening 63 of the exchange interaction. In the recent work of Ref. 21, the authors more deeply  explore  the  temperature  dependence  of 𝜏𝑣 and  find  that  valley  depolarization  at  low temperatures is driven by long-range electron-hole exchange interactions, but as temperatures are increased, intervalley phonon scattering dominates. A subsequent experimental study demonstrated  that  the  valley  polarization  can  be  enhanced  over  a  range  of  temperatures  by electrostatic gating, which adds additional carriers to the material that screen the  electron-hole exchange interaction. 22 Therefore, we suggest that carrier doping may be a contributing factor to the enhancement of 𝜌𝑉𝑃 in alloys at elevated temperatures, which is supported by the larger X T / X 0 integrated intensity ratio for x = 0.04 compared to WSe2 ( Supplementary Fig. S10 ). However, we cannot conclude that doping is the only factor since the X T / X 0 integrated intensity ratio of the

x = 0.14 alloy is less than that of WSe2 but its valley polarization is larger at 100 K. Another possible  explanation  for  the  sustained  valley  polarization  at  higher  temperatures  may  be  a reduction in 𝜏𝑥 due to disorder. 64 We have attempted to fit our data using functional forms provided in  Ref.  21,  but  cannot  obtain  unique  fitting  parameters  since  both 𝜏𝑥 and 𝜏𝑣 are  complicated functions  of  temperature,  bright-dark  exciton  splitting,  phonon  scattering  rates,  and  exciton relaxation times.

The valley decoherence rate differs from the valley depolarization rate by its additional sensitivity to pure dephasing ( 𝛾𝑑𝑒𝑝 ). This results in a different expression 𝜌𝑉𝐶 = 𝜌0 1+2(𝛾𝑣+𝛾𝑑𝑒𝑝 )/𝛾 𝑥 . 65,66 Unique temperature dependencies for 𝜌𝑉𝑃 and 𝜌𝑉𝐶 are therefore expected and observed in Fig. 6a and Fig. 6b , respectively. We again find that for alloys the valley coherence is larger than in WSe2 at higher temperatures.  The  impact  of  pure  dephasing  on  valley  coherence  makes  it  more  sensitive  to scattering events than valley polarization. According to Ref. 12, changes in exciton momentum due to scattering from defects yields an in-plane magnetic field that leads to depolarization and decoherence. As the frequency of impurity scattering is increased, however, the time-averaged effective magnetic field experienced by excitons due to the electron-hole exchange interaction 19 is reduced,  which  can  act  to  enhance  valley  properties.  Further  studies  on  WSe2(1-x)Te2x  using temperature-dependent and  time-resolved  spectroscopies  such  as  those  in  Refs.  12  and  21  are required to determine the respective contributions of the above decoherence and depolarization mechanisms.

## Discussion

We  have  used  low-temperature  Raman  and  temperature-dependent,  polarization-resolved  PL spectroscopy to characterize different crystal phases spanned by monolayer WSe2(1-x)Te2x alloys and explore how incorporation of Te into the WSe2 lattice affects valleytronic and semiconducting properties.  DFT  calculations  of  the  phonon  dispersion  curves  for  1H-WSe2  and  1Td-WTe2 alongside low-temperature Raman measurements allowed us to assign the vibrational modes of the WSe2 and WTe2 endpoint compounds. The shifting and splitting of these vibrational modes were tracked with composition x, and we found the appearance of alloy-only features resulting from W-Te vibrations in the 1H alloys that we confirm through the combination of polarizationresolved Raman measurements and DFT calculations. Temperature-dependent PL measurements

were used to demonstrate band gap tunability, identify the alloy dependence of exciton and trion states, and observe a new defect-related emission feature. DFT calculations of the optical band gap in  the  alloys  agree  very  well  with  low-temperature  PL  measurements  when  using  the  HSE06 functional. Polarization-resolved PL measurements show that alloys still exhibit valley polarization and coherence, and that these valley properties can be superior to those of WSe2 at higher temperatures. Reflectance measurements were also used to measure the A and B excitons in select alloys, indicating that the spin-orbit splitting of the valence band can be increased with the  addition  of  Te.  This  study  illustrates  the  resilience  of  valley  phenomena  in  alloys  and  the prospect of their application in a novel class of phase change memory technologies that also take advantage of spintronic and valleytronic information processing.

## Methods

## Crystal Growth and Structural Characterization

WSe2(1-x)Te2x  alloys  (x  =  0…1)  were  grown  by  the  chemical  vapor  transport  (CVT)  method. Appropriate amounts of W (99.9 %), Se (99.99 %), and Te (99.9 %) powders were loaded in quartz ampoules together with ≈90 mg (≈4 mg per cm 3 of the ampoule's volume) of TeCl4 which served as a transport agent. The ampoules were then sealed under vacuum and slowly heated in a singlezone furnace until the temperature at the source and the growth zones reached 980  C and 830  C,   respectively. After 4 days of growth, the ampoules were ice-water quenched. Crystal phases of the alloys were determined by examining powder X-ray diffraction patterns using MDI-JADE 6.5 software package.* We found that alloys with x  0.4 crystallized in the 2H phase and those with x  0.8  were  in  the  Td  phase.    Results  are  consistent  with  the  reports  of  Ref.  31.  Chemical compositions were determined by the energy-dispersive X-ray spectroscopy (EDS) using a JEOL JSM-7100F  field-emission  scanning  electron  microscope  (FESEM)  equipped  with  an  Oxford Instruments X-Max 80 EDS detector.

## Sample Preparation

For optical studies, WSe2(1-x)Te2x bulk crystals were mechanically exfoliated and monolayers were identified by optical contrast. Monolayers were then fully encapsulated in an hBN heterostructure (top and bottom layer) using the viscoelastic dry-stamping method on a SiO2/Si substrate (90 nm

oxide thickness) to protect them from the degradative effects due to exposure to the atmosphere and to provide a uniform dielectric environment. 35 We note that before encapsulation, monolayers were exposed to the atmosphere for less than one hour. To guarantee clean hBN/TMD contact, the nano-squeegee method was used with a scan line density of ≥ 10 nm/line and a scan speed of ≤ 30 µm/s as suggested by Rosenberger et al. to physically push contaminants out from in between heterostructure interfaces. 33 Results of this procedure can be seen in the atomic force microscope image  of Supplementary Fig.  S6 .  Here,  the  contaminants  removed  from  the  interfaces  are gathered along both sides of the nano-squeegeed region (dark vertical lines, ≈50 nm in height above sample).

## Optical Studies

Raman  and  PL  measurements  were  performed  on  home-built  confocal  microscopes,  both  in backscattering  geometries,  that  were  integrated  with  a  single  close-cycle  cryostat  (Montana Instruments Corporation, Bozeman, MT). A 532 nm laser was used for Raman measurements since it has been shown that this excitation source can excite first and second order features, 36 whereas a 633 nm laser was used for PL measurements since it has been shown to yield a much higher degree of valley polarization than excitation with a green laser. 18 Both setups focus the excitation source through a 0.42 NA long working distance objective with 50X magnification. For Raman measurements, the laser spot was ≈2.4 µm, and the laser power density was fixed at 66 µW/µm , 2 while for PL measurements, the laser spot was determined to be ≈2.2 µm, and the laser power density was fixed at 21 µW/µm 2 . Collected light in both cases was directed to a 500 nm focal length spectrometer with a liquid nitrogen-cooled CCD (Princeton Instruments, Trenton, NJ). The spectrometer and camera were calibrated using a Hg-Ar atomic line source. For spectral analysis, Raman peaks were fit with Lorentzian profiles, whereas PL peaks were fit with Gaussians.

## Density Functional Theory Calculations

Density  functional  theory  calculations  were  performed  using  the  Vienna ab  initio Simulation Package  (VASP). 67-69 Projector  augmented  wave  (PAW)  pseudopotentials 70 and  the  PBE exchange-correlation functional 57 were utilized. Spin-orbit coupling was included in all calculations except for the phonon band structure, which is a standard procedure. 71 It  has  been recently reported that there are slight differences between the 1T' and 1Td phases in monolayer

TMDs, 34  with WTe2 likely forming in the 1Td phase. However, in this work we performed all calculations  with  the  WTe2  monolayer  in  the  1T'  structure.  Owing  to  very  small  differences between the 1T' phase and 1Td phase, this assumption is appropriate. Full relaxations of the lattice parameters and ionic positions were performed on monolayer WSe2 and WTe2 in the 1H and 1T' phases using a 32 × 32 × 1 and 32 × 16 × Γ 1 -centered k-mesh, respectively, and a 500 eV plane-wave cutoff. The phonon band structures of these compounds were computed using density functional perturbation theory (DFPT). 72 Various chalcogen-alloyed compositions of the form WSe2(1-x)Te2x were created by expanding these unit cells and substituting the appropriate amount of Te with Se (or  vice-versa).  Full  relaxations  were  again  performed  in  each  case,  with  the  k-mesh  scaled appropriately to the size of the unit cell.  In the  case  when multiple substitutional anions were needed to achieve a given composition, all combinations of the position of the alloying atoms relative to each other were tested, with the lowest energy configuration considered the ground state ( Supplementary Fig. S12 ). The density of states was computed using the aforementioned PBE functional, as well as the HSE06 functional, 58 with 25 % Hartree-Fock exact exchange included.

## Data Availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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## Acknowledgements

P.M.V. and S.M.O. acknowledge support from  the  National  Science  Foundation  (NSF)  under Grant  No.  DMR-1748650,  the  George  Mason  University  Quantum  Materials  Center,  and  the George  Mason  University  Presidential  Scholars  Program.  J.Y.  was  supported  by  funds  from Binghamton University. Computational resources were provided by the Department of Defense High Performance Computing Modernization Program. S.K. acknowledges support from the US Department of Commerce, NIST under financial assistance award 70NANB18H155. T.L.R. was supported by the Office of Naval Research.

* Disclaimer: Certain commercial equipment, instruments, or materials are identified in this paper in order to specify the experimental procedure adequately. Such identification is not intended to imply recommendation or endorsement by the National Institute of Standards and Technology, nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose.

## Author Contributions

P.M.V. and S.M.O. conceived and designed the experiments and wrote the manuscript with input from  all  coauthors.  S.M.O.  prepared  van  der  Waals  heterostructures  and  carried  out  all experiments. A.D.V. and S.K. grew the bulk crystals used in this work. J.Y. and T.L.R. performed the density functional theory calculations.

## Competing Interests

The authors declare no competing financial interests.

Fig. 1 | Structural phases and van der Waals heterostructures of WSe2(1-x)Te2x. Side and top view of (a) monolayer  1H-WSe2  and (b) monolayer  1Td-WTe2. (c) Composition-dependent  phase  diagram determined from DFT calculations indicating a phase boundary at x = 0.4. (d) Optical image of an hBNencapsulated x = 0.33 monolayer deposited onto a SiO2/Si substrate. The TMD alloy is outlined in red and the monolayer (1L) portion of that flake is outlined in black. The top layer of hBN is outlined in yellow. The white scale bar is 20 µm.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-f8dc23d1-edf7-4d8f-9ff6-8e3f383239f9.jpg)

Fig. 2 | Composition-dependent Raman spectra of WSe2(1-x)Te2x and phonon band structures of WSe2 and WTe2. (a) Raman measurements of monolayer WSe2, bilayer (2L) WTe2, and select monolayer WSe 2(1x) Te 2x alloys taken at 5 K with 532 nm excitation. Vibrational modes in WSe  and WTe  are identified with 2 2 numbers and letters, respectively, and their assignments can be found in Table 1 . Parts of the WSe  spectra 2 are scaled for clarity. (b) Peak positions extracted from Raman measurements at 5 K for different alloy compositions x. Peaks identified in panel (a) for WSe  and WTe  are labeled with their respective numbers 2 2 and letters. New alloy-induced vibrational modes are labeled D  (i = 1, 2, 3, …). The composition-dependent i shifting and the splitting of peaks are tracked with dotted lines. The error bars in panel (b) are equal to one standard deviation. (c-e) Phonon band structures calculated for 1H-WSe , 1H-WTe , and 1Td-WTe . 2 2 2

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-eb67b048-ca7b-4714-907b-5e48eaf0af5e.jpg)

Fig. 3 | Temperature-dependent PL of 1H-WSe2(1-x)Te2x. PL measurements (1.96 eV excitation) of (a) WSe2, as well as 1H-phase WSe2(1-x)Te2x alloys corresponding to (b) x = 0.04, (c) x = 0.14, (d) x = 0.29, and (e) x = 0.37. Excitation and collection are done with right circularly polarized light (σ+). The neutral exciton (X 0 ) and trion (X T ) are labeled where appropriate. Emission at 300 K is dominated by X , which has a low0 energy tail resulting from the presence of X . As the temperature is decreased, X T 0 and X T sharpen and blueshift while the localized exciton features L1 and L2 begin to dominate the spectra.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-0f3675af-0be9-4a56-8d0f-e014f50a695f.jpg)

Fig.  4  |  Composition-  and  temperature-dependent  exciton  energies.  (a) X 0 energies  extracted  from temperature-dependent PL measurements (1.96 eV excitation).  Excitation and collection are done with right circularly polarized light. The solid lines are fits to equation (1). The compositional dependence of the extracted parameters 𝐸0 , S , and ⟨ℏ𝜔⟩ are plotted in panels (b) , (c), and (d) , respectively. 𝐸0 is found to be tunable with alloying, while S and ⟨ℏ𝜔⟩ are found to decrease with increasing alloy composition x. In panel (b) , we plot DFT predicted optical band gaps as blue triangles, while the red curve is a fit to a line used to extract a 0 K band gap for 1H-WTe2 of 1.15 eV. Error bars shown in all panels are equal to one standard deviation.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-5b6e2db4-039a-4c61-8ea6-6cb67004631f.jpg)

Fig. 5 | Valley properties of WSe2(1-x)Te2x at 5 K. (a) Simplified image of the electron bands near the K and K  points of the hexagonal Brillouin zone in monolayer WSe2. Valley-dependent optical selection rules  couple transitions at the K (K ) valleys with σ+ (σ-) circularly polarized light.  (b) and (c) show example spectra of valley polarization and valley coherence measurements for x = 0.04, respectively. (d) The degree of valley polarization ( ρVP ) of X 0 (black squares) and X  (red circles) and T (e) the degree of valley coherence ( ρVC ) of X  plotted against alloy composition x. The error bars shown in panels 0 (d) and (e) are equal to one standard deviation.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-80cf8e18-ae8f-4fd2-bfad-b082fed75bfe.jpg)

Fig. 6 | Temperature dependence of ρ VP and ρ VC in 1H-WSe2(1-x)Te2x. (a) ρ VP and (b) ρ VC of 1H-WSe2(1x) Te2x as a function of temperature. In both cases, the alloys are found to sustain valley properties at elevated temperatures when compared to pure WSe2 (x = 0). Measurements in both panels are done with 1.96 eV excitation. The solid lines in both panels are guides to the eye and the error bars are equal to one standard deviation.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-d8488c04-428a-496e-9782-ea83f6412cc2.jpg)

| 1H-WSe 2   | 1H-WSe 2          | 1H-WSe 2                                    |
|------------|-------------------|---------------------------------------------|
| Label      | Position (cm -1 ) | Assignment                                  |
| 1          | 132               | unknown                                     |
| 2          | 223               | 𝐸′(𝐾) a                                     |
| 3          | 240               | 𝐸′(𝑀) a                                     |
| 4          | 250               | 𝐴 ′ 1 +𝐸′                                   |
| 5          | 264               | 2𝐿𝐴(𝑀) a,b                                  |
| 6          | 351               | 2𝐸′(Γ) b or 𝐴 ′ 1 (𝑀) +𝑇𝐴(𝑀) b              |
| 7          | 378               | [𝐸′(Γ) or 𝐴 ′ 1 (Γ)] +𝐿𝐴(𝑀) a,b             |
| 8          | 401               | [𝐸′(Γ) or 𝐴 ′ 1 (Γ)] +𝐿𝐴(𝐾) a or 3𝐿𝐴(𝑀) a,b |

| T d -WTe 2 (bilayer)   | T d -WTe 2 (bilayer)   | T d -WTe 2 (bilayer)                           |
|------------------------|------------------------|------------------------------------------------|
| Label                  | Position (cm -1 )      | Assignment                                     |
| a                      | 87                     | 𝐴 2                                            |
| b                      | 107                    | 𝐴 2                                            |
| c                      | 166                    | 𝐴 1                                            |
| d                      | 218                    | 𝐴 1                                            |
| e                      | 327                    | 2𝐴 1 (2x peak c) or 𝐴 1 +𝐴 2 (peak d + peak b) |

Table  1.  |  Raman  mode  assignments. 1H-WSe 2 and  T -WTe   (bilayer)  vibrational  mode  symmetry d 2 assignments for the peaks identified in Figs. 2a and 2b . WSe  peaks are labeled with numbers and WTe 2 2 peaks are labeled with letters. The superscripts a and b refer  to assignments made in Refs. 36 and 37, respectively.

## Supplementary Information

## Valley Phenomena in the Candidate Phase Change Material WSe2(1-x)Te2x

Sean M. Oliver 1,2 , Joshua Young 3 , Sergiy Krylyuk 4,5 , Thomas L. Reinecke 6 , Albert V. Davydov 4 , Patrick M. Vora 1,2,*

1 Department of Physics and Astronomy, George Mason University, Fairfax, VA, United States of America

2 Quantum Materials Center, George Mason University, Fairfax, VA, United States of America

3 Department of Physics, Applied Physics and Astronomy, Binghamton University, Vestal, NY, United States of America

4 Functional Nanostructured Materials Group, National Institute of Standards and Technology, Gaithersburg, MD, United States of America

5 Theiss Research, La Jolla, CA, USA

6 Naval Research Laboratory, Washington, DC, United States of America

*Author to whom correspondence should be addressed

Email: pvora@gmu.edu

Supplementary Figure 1 | Lorentzian fits to Raman data of select WSe2(1-x)Te2x alloys. Raman measurements of x = 0.04, 0.37, and 0.81 alloys taken at 5 K with 532 nm excitation. The black points correspond to the experimental data and the blue peaks are individual Lorentzian fits. The red curves are obtained by summing the individual Lorentzian fits.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-6b23fa51-101b-4408-9839-c4d96f5d66f0.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-985a92dc-50b1-4817-bc1e-6436e7478841.jpg)

Supplementary Figure 2 | Composition-dependent Raman measurements of WSe2(1-x)Te2x. Raman measurements taken with 532 nm excitation at (a) 5  K  and (b) 300  K  for  all  studied compositions. We note that even though the WTe2 spectra of panels (a) and (b) were taken on the same sample, the spectrum of panel (a) was taken on a bilayer region (absence of peak at ~130 cm -1 ) while the spectrum of panel (b) captured a nearby portion of bulk WTe2 (presence of peak at ~130 cm -1 ).

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-621f0b1c-df4b-4ee5-8fa6-299827c723c9.jpg)

Supplementary  Figure  3  |  Polarization-resolved  Raman  measurements  of  select  1HWSe2(1-x)Te2x alloys taken at 5 K. Raman measurements taken with 532 nm excitation of (a) x = 0.29 and (b) x  = 0.33 alloys, which were chosen for the clear splitting of the primary 𝐴′1 mode in WSe . Due to the differing symmetries of the 2 𝐴′1 and 𝐸′ modes, polarization selection rules in a backscattering experimental geometry state that 𝐴′1 modes should only be visible when the analyzer is co-polarized with the excitation, while 𝐸′ modes are visible when the analyzer is arranged either co- or cross-polarized with the excitation.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-8ecc0e3b-a3de-4e29-ab63-ec70f8840b0e.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-ebe60f50-d0f6-4516-83e8-bb9f4315ad44.jpg)

Supplementary Figure 4 | DFT-calculated optical band gaps and density of states for WSe2(1x)Te2x. (a) Optical band gaps calculated using DFT. We find that the HSE06 functional predicts a band gap that agrees better with experiment than the PBE functional as demonstrated in several other  material  families. 1,2 (b-m) Density  of  states  calculated  using  the  HSE06  functional  for monolayer WSe2(1-x)Te2x alloys.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-e0ffa9c9-cfe1-4f34-b27f-f69bd9279293.jpg)

Supplementary Figure 5 | Composition-dependent X T  energy and X 0 -X T  binding energy. The alloy dependence of the X T energy is  plotted as  black squares  (left  axis)  and  the  alloy dependence of the X -X T 0 binding energy is plotted as red circles (right axis). Data was taken at 5 K with 1.96 eV excitation. Excitation and collection were done with right circularly polarized light ( σ +). The error bars are equal to one standard deviation.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-996ad0f5-d91d-48f0-b021-d0a0638b199e.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-c3f95024-0cc2-4a25-b7e8-7082b5545935.jpg)

Supplementary Figure 6 | Nano-squeegeeing of van der Waals heterostructures and PL spatial mapping. (a) Atomic force microscope image of an hBN-encapsulated x = 0.33 sample that has been nano-squeegeed (region outlined with a red box) to clean the heterostructure's interfaces. Monolayer (1L) and few-layer (FL) regions have been labeled and outlined with white dashed lines to distinguish from areas with only top and bottom layers of hBN and no TMD in between. Residues removed from the heterostructure's interfaces are gathered around the edges of the nano-squeegeed region. (b) Low-temperature (5 K) PL spectrum taken with 1.96 eV excitation at the location marked by the white crosshairs in panel (a) . The sample is excited with right circularly polarized light σ+ and re-emitted σ+ light is collected.  Lorentzian fits to the neutral exciton (X ), trion (X 0 T ), and localized states are shown. PL spatial mapping of the (c) X 0 energy, (d) intensity, and (e) full width at half maximum (FWHM), as well as the (f) X T energy, (g) intensity, and (h) FWHM. The nano-squeegeed region is outlined with a red box in panels (c) -(h) as well. All scale bars are 3 µm.

Supplementary Figure 7 | Zoom-in of exciton and exciton-phonon complexes in WSe2 at energies above X 0 that occur at 5 K. Here, measurements are done with 1.96 eV excitation (black curve) and 2.33 nm excitation (red curve) to determine whether the features are related to optical transitions or Raman scattering. Peaks common to both measurements are labeled with numbers (1) - (5). The peak (3) X * feature originating from the 0 2s state of the A exciton does not shift with excitation energy, although it appears to decrease in intensity with 2.33 eV excitation since it no longer overlaps with the Si Raman peak as it does under 1.96 eV excitation. The peaks (1) - (5) that are related to Raman scattering shift in energy by the same amount as the change in excitation energy. The black curve ends just above 1.92 eV due to the collection cutoff filter. The superscript a refers to assignments made in Ref. 5.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-b4b570dd-1f48-4fe2-8f7a-80ef03e7241e.jpg)

Supplementary Figure 8 | Differential  reflectivity  measurements  of  select WSe2(1-x)Te2x alloys. Measurements are taken at (a) 5 K and (b) 300 K. Prior to differentiation, reflectivity measurements were processed using the equation 𝑅𝑇𝑀𝐷-𝑅𝑆𝑢𝑏𝑠𝑡𝑟𝑎𝑡𝑒 𝑅𝑇𝑀𝐷-𝐷𝑎𝑟𝑘 , where 𝑅𝑇𝑀𝐷 and 𝑅𝑆𝑢𝑏𝑠𝑡𝑟𝑎𝑡𝑒 are reflectance measurements taken on the encapsulated TMD alloy and the top and bottom hBN sandwich atop the SiO /Si substrate without the TMD alloy in between, respectively. 2 𝐷𝑎𝑟𝑘 refers to a dark scan to remove any background effects. Spectra are cleaned using a SavitzkyGolay filter. (c) Energy splitting at 300 K of the A and B states of X  plotted against alloy 0 composition x.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-11aeff85-d9ef-4e38-b210-f926c9c6e892.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-5d8b8e3a-7c22-4c2b-ba79-675b7e88ba05.jpg)

Supplementary Figure 9 | Valley phenomena in 1H-WSe2(1-x)Te2x before and after nanosqueegeeing. Comparison of (a) ρ VP and (b) ρ VC for X  in samples pre- and post-squeegeeing 0 (black squares and red circles, respectively). The nano-squeegeeing process improved ρ VP while having very little effect on ρ VC . The error bars in both panels are equal to one standard deviation.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-43731bf4-df47-49bb-a0e2-ba203c0eadc2.jpg)

Supplementary Figure 10 | Alloy-dependent ratio of the trion (X T ) integrated intensity to the neutral exciton (X 0 ) integrated intensity at 5 K compared to the alloy dependence of 𝝆𝑽𝑷 . The X T / X 0 ratio values are marked by black squares and correspond to the left axis. The 𝜌𝑉𝑃 values are marked by red circles and correspond to the right axis. Measurements are done with 1.96 eV excitation at 5 K. The error bars are equal to one standard deviation.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-73ba6f3e-ca9a-4d00-9c6b-4ebca9482187.jpg)

Supplementary Figure 11 | Temperature dependence of 𝝆𝑽𝑷 for  X T   in  1H-WSe2(1-x)Te2x alloys. 𝜌𝑉𝑃 is found to be sustained at higher temperatures for the x = 0.04 than for pure WSe2 (x = 0). Measurements are done with 1.96 eV excitation. The error bars are equal to one standard deviation.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-0a79f5a0-017e-496b-8ed2-7a5ed841de8c.jpg)

Supplementary Figure 12 | Ground state structure of each WSe 2(1-x) Te 2x alloy concentration investigated using density functional theory.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00506v2-figure-a3aaed51-2ba5-4c1f-8a29-e4507aa318cb.jpg)

## Supplementary Note 1

We use PL spatial mapping of an x = 0.33 sample to explore spectral changes across the alloy ( Supplementary Fig. S6 ).  As with all of the other samples used in this study, the sample was mechanically exfoliated and encapsulated in an hBN heterostructure on a SiO2/Si substrate using the  dry-stamping  method  with  a  polydimethylsiloxane  polymer.   An  atomic  force  microscope 3 (AFM) image of the sample can be seen in Supplementary Fig. S6a . We have used the nanosqueegee method 4 to ensure that residues from the encapsulation process have been removed from the areas of interest (red box in Supplementary Fig. S6a ). Looking closely at the AFM image, it can  been  seen  that  not  only  have  impurities  been  primarily  pushed  to  the  edge  of  the  nanosqueegeed region, marked by orange colors indicating a higher height profile where residues have gathered, but some impurities faintly remain in the center and to the left half of cleaned region. A PL measurement taken at 5 K from the location of the white crosshair in Supplementary Fig. S6a is pictured in Supplementary Fig. S6b . This spectrum shows the typical features of the alloys,

specifically the neutral exciton (X ), the trion (X 0 T ), and localized states, which in this case have been fit with Lorentzians. Spatial resolution of the energies, intensities, and full widths at half maxima (FWHM) of X 0  and X T  at 5 K are shown in Supplementary Figs. S6c-S6h . We focus primarily on the nano-squeegeed region outlined with a red box. In this area, these measurements indicate that while the spatial variations of the FWHMs for X 0 and X T were miniscule, they were sharpest along the right side of the nano-squeegeed region. The areas of sharpest FWHMs hosted the greatest intensities of X  and X 0 T , as well as a uniform redshift of the peaks' energies.

## Supplementary Note 2

We also find evidence for excitons and exciton-phonon complexes above X 0 that can be clearly seen in Supplementary Fig. S7 .  The  lowest  energy feature, labeled WSe2 𝐴′1 +  SiO2 Raman, occurs at 1.76 eV with 1.96 eV excitation and shifts with laser energy for 2.33 eV excitation. The energy-dependent position of this feature suggests that this peak has a phonon origin, and was determined  by  a  prior  photoluminescence  excitation  study  of  different  configurations  of hBN/WSe2 encapsulations on SiO2/Si and sapphire substrates to be a combination of the WSe2 𝐴′1 Raman mode and a SiO2 surface phonon. 5 We measure another feature at 1.83 eV with 1.96 eV excitation, labeled hBN/WSe2, that shifts with laser energy. As evidenced in Refs. 5-7, we attribute this feature to exciton-phonon coupling between hBN and WSe2 that results in activation of the hBN IR-active 𝐴2𝑢 ZO mode or the hBN Raman- and IR-silent 𝐵1𝑔 ZO mode. On the other hand,  the  X *  peak  measured  at  1.87  eV  does  not  shift  with  laser  energy,  although  changing 0 excitation energy results in a decrease in its intensity since this feature no longer rides the Si Raman peak background with which it overlaps when excited with 1.96 eV excitation. The presence of this feature in reflectance measurements at 5 K and 300 K indicates that X * results from an optical 0 transition ( Supplementary Fig. S8 ). Assignment of this feature to the B exciton is ruled out since the X 0 -X 0 * splitting at 5 K is ≈110 meV, which is much lower than the A-B exciton splitting of ≈400 meV, 8  and also both the X 0* peak and the transition from the B exciton can be seen together in 300 K reflectance measurements ( Supplementary Fig. S8 ). We suggest the X * feature is the 0 2s excited  state  of  X ,   in  agreement  with  prior  studies  of  hBN-encapsulated  WSe2 0 9 and WS0.6Se1.4. 10-13 We note that there is  also  a  higher  energy  shoulder  accompanying  X *  that  is 0 independent of laser energy and is thought to related to the 3s excited state of X . 0 13 The X 0* feature is also observed in 300 K reflectance measurements of the x = 0.33 alloy ( Supplementary Fig.

S8 ). In the alloy, X * is ≈120 meV above X , suggesting only a small increase in the 0 0 1s - 2s energy splitting  with  Te  incorporation.  Reflectance  data  illustrating  the  alloy  dependence  of  the  A-B exciton splitting at 300 K is also presented in Supplementary Fig. S8 . This valence band spinorbit splitting increases with Te composition as expected from prior DFT calculations. 14

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Sean M. Oliver Joshua Young Sergiy Krylyuk Thomas L. Reinecke Albert V. Davydov Patrick M. Vora
Valley Phenomena in the Candidate Phase Change Material WSe$_{2(1-x)}$Te$_{2x}$
Alloyed transition metal dichalcogenides provide an opportunity for coupling
band engineering with valleytronic phenomena in an atomically-thin platform.
However, valley properties in alloys remain largely unexplored. We investigate
the valley degree of freedom in monolayer alloys of the phase change candidate
material WSe$_{2(1-x)}$Te$_{2x}$. Low temperature Raman measurements track the
alloy-induced transition from the semiconducting 1H phase of WSe$_2$ to the
semimetallic 1T$_d$ phase of WTe$_2$. We correlate these observations with
density functional theory calculations and identify new Raman modes from W-Te
vibrations in the 1H alloy phase. Photoluminescence measurements show ultra-low
energy emission features that highlight alloy disorder arising from the large
W-Te bond lengths. Interestingly, valley polarization and coherence in alloys
survive at high Te compositions and are more robust against temperature than in
WSe$_2$. These findings illustrate the persistence of valley properties in
alloys with highly dissimilar parent compounds and suggest band engineering can
be utilized for valleytronic devices.