## Machine-learning-assisted  thin-film  growth:  Bayesian  optimization  in  molecular beam epitaxy of SrRuO3 thin films

Yuki K. Wakabayashi, 1,a)  Takuma Otsuka, 2  Yoshiharu Krockenberger, 1  Hiroshi Sawada, 2 Yoshitaka Taniyasu, 1  and Hideki Yamamoto 1

1 NTT  Basic  Research  Laboratories,  NTT  Corporation,  Atsugi,  Kanagawa  243-0198, Japan

- 2 NTT Communication Science Laboratories, NTT Corporation, Soraku-gun, Kyoto 6190237, Japan
- a)Author to whom correspondence should be addressed: yuuki.wakabayashi.we@hco.ntt.co.jp

## Abstract

Materials informatics exploiting machine learning techniques, e.g. , Bayesian optimization (BO), has the potential to offer high-throughput optimization of thin-film growth conditions through incremental updates of machine learning models in accordance with newly measured data. Here, we demonstrated BO-based molecular beam epitaxy (MBE) of SrRuO3, one of the most-intensively studied materials in the research field of oxide electronics, mainly owing to its unique nature as a ferromagnetic metal. To simplify the intricate search space of entangled growth conditions, we ran the BO for a single condition while keeping the other conditions fixed. As a result, high-crystallinequality SrRuO3 film exhibiting a high residual resistivity ratio (RRR) of over 50 as well as strong perpendicular magnetic anisotropy was developed in only 24 MBE growth runs in which the Ru flux rate, growth temperature, and O3-nozzle-to-substrate distance were optimized. Our BO-based search method provides an efficient experimental design that is not as dependent on the experience and skills of individual researchers, and it reduces experimental time and cost, which will accelerate materials research.

## I. INTRODUCTION

The  itinerant  ferromagnetic  perovskite  SrRuO3  is  one  of  the  most  promising materials  for  oxide  electronics. 1 -10 Owing  to  its  compatibility  with  other  perovskitestructured  oxides,  as  well  as  its  high  conductivity  and  chemical  stability,   SrRuO3  is 3 widely  used  as  an  epitaxial  conducting  layer  in  oxide  heterostructures.  However,  a thorough understanding of its transport properties, electronic structure, and origin of its ferromagnetism remains elusive despite tremendous efforts for over five decades. While high-quality specimens are indispensable for exploring electronic states, it is difficult to make high-quality bulk single crystals of SrRuO3, and hence, thin film specimens have been  making  a  significant  contribution  to  such  research.  The  residual  resistivity  ratio (RRR), which is defined as the ratio of resistivity at 300 K [ ρ (300 K)] to that at 4 K [ ρ (4 K)], is a good measure of the purity of a metallic system, and accordingly, the quality of single-crystalline SrRuO3  thin  films: RRR  is  very  sensitive to defects and  offstoichiometry. 8 11 12 , , More specifically, only SrRuO3 films with high RRR values above 40 and 60 have enabled observation of sharp dispersive quasiparticle peaks near the Fermi level by angle-resolved photoemission spectroscopy (ARPES) and of quantum oscillations in the electrical resistivity, respectively. 13,14 Such high-quality films maintain their  metallic  and  ferromagnetic  character  even  when  the  thickness  is  reduced  to  a monolayer, 15 providing a rare example of two-dimensional ferromagnetism. This means that extremely thin SrRuO3 films can serve as a two-dimensional spin-polarized electron system,  as  the  existence  of  a  spin-polarized  electron  current  has  been  established  in thicker SrRuO3-based magnetic tunnel junctions. 16,17 Accordingly, high-quality SrRuO3 thin films are also promising for future spintronics applications. However, fine-tuning of multiple growth conditions, including the flux ratio of Ru/Sr, the growth temperature, and the oxygen pressure, is required for high-RRR SrRuO3 growth, and only a few papers have reported SrRuO3 films with RRRs of over 50. 7,10,14

To  optimize  the  growth  conditions,  one  may  take  a  conventional  trial-and-error approach, which is time-consuming and costly, and whose optimization efficiency largely depends  on  the  skills  and  experience  of  individual  researchers.  In  contrast,  recent advances  in  materials  informatics  exploiting  machine  learning  techniques,  such  as Bayesian optimization (BO) and artificial neural networks, offer an alternative approach of high-throughput experiments. 18-22 So far, materials informatics has mainly focused on high-throughput  predictions  of  brand-new  materials  having  designated  functions  by utilizing materials databases and/or theoretical calculations. 22-30 Nevertheless, there have been a few reports on high-throughput experiments achieved by incrementally updating the machine learning models in accordance with newly measured data. 31-35 Since BO is a sample-efficient approach for global optimization, 36 adaptive sampling of the growth conditions with BO will streamline the optimization of the thin-film growth conditions.

In  this  article,  we  describe  machine-learning-assisted  molecular  beam  epitaxy (MBE) of the SrRuO3 thin films. We developed a high RRR (&gt; 50) SrRuO3 film in only 24 MBE growth runs. Thorough crystallographic analyses confirmed the high crystallinity of the films with the  large  RRR  values.  In  addition,  these  films  showed  perpendicular magnetization with rectangular hysteresis and a small coercive field of 0.1 T, which is advantageous for spintronics applications. The algorithm presented here is an efficient means for experimental designs aimed at optimizing the growth conditions, with which advancement will be less empirical as compared with the conventional process and at significant reductions in experimental time and cost.

## II. EXPERIMENT

Single-crystalline SrRuO3 thin films (65-nm thick) were epitaxially grown on (001) SrTiO3  substrates  in  a  custom-designed  MBE  setup  equipped  with  multiple  e-beam evaporators for Sr and Ru. 37-39 We precisely controlled the elemental fluxes even for elements with high melting points, e.g. , Ru (2250¡C), by monitoring the flux rates with an  electron-impact-emission-spectroscopy  sensor  and  feeding  the  results  back  to  the power supplies for the e-beam evaporators. The Sr flux rate was fixed to 0.98 GLYPH&lt;129&gt;/s. The oxidation during growth was carried out with ozone (O3) gas. The O3 gas ( ~ 15% O3 + 85% O2) was introduced through an alumina nozzle pointed at the substrate at a flow rate of ~ 2  sccm.  The  nozzle-to-substrate  distance  is  an  important  growth  parameter  that, along with the growth temperature, determines the local oxidation strength at the growth surface. Further information about the MBE setup and preparation of the substrates are described elsewhere. 39 In the conventional synthesis procedure, three important growth parameters; i.e. , the Ru flux rate, growth temperature, and O3-nozzle-to-substrate distance, are systematically optimized, but in an empirical manner whose success depends on the experience of the researchers. In contrast, we optimized the three parameters by using the BO algorithm. The Ru flux rate, growth temperature, and nozzle-to-substrate distance were varied in ranges between 0.18 and 0.61 GLYPH&lt;129&gt;/s, 565 and 815¡C, and 1 and 31 mm, in correspondence  with  the  search  ranges  in  BO. Here, the  search  range  of  the  growth temperature is within the typical thermodynamic growth window for growth of SrRuO3 thin films. 10 We searched equally spaced grid points for each parameter. The number and corresponding  intervals  of  the  respective  quantities  were  44  (0.01  GLYPH&lt;129&gt;/s  interval),  41 (6.25¡C interval), and 31 (1 mm interval). Since the three-dimensional parameter space consisted of 55924 (44 × 41 × 31) points, full surveillance of the entire space in a point-bypoint manner was unrealistic, as only a limited number runs can be carried out per day with a typical MBE system. The crystal quality of the films was monitored by in-situ reflection high-energy electron diffraction (RHEED) during and after the growth. When diffractions from the SrRuO3 phase were indiscernible and/or diffractions from SrO or RuO2 precipitates appeared, we defined the RRR value of those samples to be 0. 10

Figure  1  shows  the  procedure  of  machine-learning-assisted  MBE  growth  of  the SrRuO3 thin films based on the BO algorithm, which is a sequential design to optimize a black-box  function  S( x ). 40 In  this  study,  we  optimized  the  growth  parameters  one dimension at a time. In concrete terms, we first optimized the Ru flux rate while keeping the other parameters unaltered. Subsequently, we tuned the growth temperature and the nozzle-to-substrate  distance.  Here,  RRR  =  S( x )  is  the  target  function  specific  to  our SrRuO3 films, and   is the growth parameter (Ru flux rate, growth temperature, or nozzlex to-substrate distance). Given a data set {𝑥 % , RRR% } %)* + obtained from the past M MBE growths  and  RRR  measurements  of  SrRuO3  films,  we  use  it  to  construct  a  model  to predict the value of S( x ) at an unseen x . To this end, we use Gaussian process regression (GPR)  to  estimate  the  mean  ( µ )  and  variance  ( σ )  at  an  arbitrary  parameter  value x . Specifically, GPR predicts S( x ) that follows a Gaussian distribution N( 𝜇 , 𝜎 . ), where µ and σ depend on x and the M data samples. In short, 𝜇 ( x ) represents the expected value of RRR and 𝜎 ( x ) represents the uncertainty of RRR at x . To take into account the inherent noise  in  the  RRR  of  SrRuO3  films  grown  under  nominally  the  same  conditions,  the variance of the observation noise 𝛽 of the GPR model was set to 0.02 or 0.002. Further information about the GPR is described elsewhere. 33 We iterate the routine after the initial

MBE growth and RRR measurements for each growth parameter optimization. First, GPR is  updated  using  the  data  set  at  the  time  of  optimization  for  the  specific  parameter currently being surveyed. Subsequently, to assign the value of the growth parameter in the next run, we calculate the expected improvement (EI); 41 EI balances exploitation and exploration by using the predicted 𝜇 ( x ), 𝜎 ( x ), and the best experimental RRR value at that  time.  More  specifically,  an  unmeasured  value  of x at  which  the  EI( x )  takes  a maximum is sampled in the next sequence. Note that we excluded already measured x values from being the next sampling point to avoid duplicate trials. This routine is iterated to grow and measure more samples until an arbitrary criterion is satisfied. Examples of such criteria include the degree of convergence of EI values and setting a predetermined number of sampling points. Here, we stopped the routine at 11 samples per parameter. After completing 11 samplings for a certain parameter, we chose the value that gave the highest RRR and started the optimization of another parameter.

## III. RESULTS AND DISCUSSION

## A. Bayesian optimization of MBE growth of SrRuO3

First, we optimized the Ru flux rate while keeping the growth temperature and the nozzle-to-substrate distance fixed (615¡C and 16 mm, respectively). Here, we could have started with any initial growth temperature and nozzle-to-substrate distance, although the selection  may  affect  the  efficiency  of  the  optimization.  Figure  2  shows  how  the  BO algorithm predicts RRR values with unseen parameter configurations and acquires new data points: the process starts with five random initial Ru flux rates [Fig. 2(a)] and gains experimental RRR values for the updated GPR model with seven [Fig. 2(b)], nine [Fig. 2(c)], and eleven [Fig. 2(d)] Ru flux rates. The EI values at the respective stages are shown in the lower panels. In Figs. 2(b)-2(d), the search range was reduced to the Ru flux rate range within which the SrRuO3 phase had formed. For the RRR predicted with five initial data points [Fig. 2(a)], the 𝜎 value above 0.4 Å /s increased with increasing Ru flux rate. This indicates that the RRR prediction in that region is uncertain because of the absence of data points above 0.4 GLYPH&lt;129&gt;/s. The results in Fig. 2(a) indicate that the highest EI was at 0.61 Å /s. The overall variance of the predicted RRR became smaller as the data points increased from five to 11, leading to lower EI values. This suggests that we have only a limited chance to improve the RRR value by further modification of the Ru flux rate. The highest  experimental  RRR  (29.33)  was  obtained  at  0.42 Å /s,  which  was  in  good agreement with the prediction, and hence, we set the Ru flux rate to 0.42 Å /s in the next optimization; namely, the growth temperature optimization.

The growth temperature optimization was carried out at the optimized Ru flux rate (0.42 Å /s) and at a fixed initial (not yet optimized) nozzle-to-substrate distance (16 mm). Four initial growth temperatures were chosen at equal intervals [Fig. 3(a)]. As in the case of the Ru flux rate optimization, the variance of the predicted RRR became smaller as more data points were collected, resulting in a reduction in EI. For 721¡C, the maximum experimental  RRR  (49.23)  coincided  with  the  prediction  [Fig.  3(d)].  Accordingly,  we fixed the growth temperature for the nozzle-to-substrate distance optimization at 721¡C.

We optimized the O3-nozzle-to-substrate distance while keeping the Ru flux rate and growth  temperature  at  their  optimized  values.  Three  initial  O3-nozzle-to-substrate distances were chosen at equal intervals [Fig. 4(a)]. The search range was reduced to the nozzle-to-substrate distance range within which the SrRuO3 phase had formed. Again, the variance of the predicted RRR became smaller, with a concomitant reduction in EI,

as  the  number  of  data  points  increased.  The  highest  experimental  RRR,  51.79,  was achieved  at  a  nozzle-to-substrate  distance  of  15  mm.  Through  these  optimizations, SrRuO3 films with RRRs over 10, 20, 40, and 50 were obtained in four, five, 12, and 24 MBE growth runs (Fig. 5).

The  quality  of  the  SrRuO3  films  exhibiting  RRRs  over  50  was  high  enough  to investigate the intrinsic electronic structure by, e.g ., ARPES, and to make an atomically thin ferromagnetic and conducting layer. 13,15 However, the highest RRR (51.79) was still lower than the highest value ever reported ( ~ 80).  To increase the RRR of our SrRuO3 7 films, it is necessary to find the global-best point in the three-dimensional parameter space. In the following, we detail two methods to enhance the RRR value. One is to iterate the parameter-wise optimization while setting the other parameters to their best values; i.e. , to  restart  with  the  optimization  of  the  Ru  flux  rate  with  the  growth  temperature  and nozzle-to-substrate distance set at 721¡C and 15 mm. The other is to run the BO algorithm in  the  three-dimensional  space  directly.  The  latter  idea,  however,  may  lead  to  an inefficient  search  because  a  GPR  prediction  in three-dimensional  space  requires  more data points for accuracy than a GPR prediction in one-dimensional space.

## B.  Crystallographic,  electrical,  and  magnetic  properties  of  high-quality  SrRuO3 films (RRR &gt; 50)

We experimentally  characterized  the  high-quality  SrRuO3  thin  films  with  RRRs larger than 50. First, the crystallinity of the SrRuO3 films was examined by RHEED, Xray diffraction (XRD), atomic force microscopy (AFM), and high-angle annular dark-field scanning  transmission  electron  microscopy  (HAADF-STEM).  Figure  6(a)  shows  the RHEED pattern of a SrRuO3 thin film surface, where the sharp streaky patterns with clear Kikuchi lines indicate growth of single-crystalline SrRuO3 film with an atomically flat surface. The AFM observations show a surface morphology composed of flat terraces and molecular  steps  with  a  height  of  ~0.4 nm,  corresponding  to  a  single  unit  cell  (u.c.) thickness for  the  pseudocubic  lattice  of  SrRuO3  [Fig.  6(b)].  Laue  fringes  in  the θ -2 θ -scanned  XRD  pattern  [Figure  6(c)]  also  indicate  high  crystalline  quality  and  a  large coherent volume of the film. The out-of-plane lattice constant, estimated from the NelsonRiley extrapolation method, 42 was 3.949 GLYPH&lt;129&gt;, ~ 0.5% larger than the pseudocubic lattice constant  of  the  bulk  specimens  (3.93  GLYPH&lt;129&gt;). 8 This  implies  that  the  SrRuO3  film  was compressively strained due to the lattice constant of the SrTiO3 substrate (3.905 Å ) being ~ 0.6% smaller than the pseudocubic lattice constant of SrRuO3. Figures 6(d)-6(f) show cross-sectional  HAADF-STEM  images  of  SrRuO3  thin  film  taken  along  the  [110] direction of the SrTiO3 substrate. At a glance, one can recognize that a single-crystalline SrRuO3 film with an abrupt substrate/film interface had grown epitaxially on a (001) SrTiO3 substrate. As the intensity in the HAADF-STEM image is proportional to ~ Z n (n ~ 1.7-2.0,  and Z is  the  atomic  number),  the  clear  and  periodical  contrast  between  the cations [Sr ( Z = 38) and Ru ( Z = 44)] shown in Fig. 6(f) means the atomic arrangement in the film was uniform.

Next, the electrical and magnetic properties were investigated. The resistivity versus temperature curve shows a clear kink at ~ 152 K [Fig. 7(a)], at which the ferromagnetic transition occurs and spin-dependent scattering is suppressed;  the Curie temperature ( 7 T C) of the film was ~ 152 K. A clear ferromagnetic transition at ~ 152 K was also observed in the magnetization versus temperature curves when a magnetic field of 100 Oe was applied to the out-of-plane [001] or in-plane [001] direction of the SrTiO3 substrate [Fig.

7(a)]. T C  was  lower  by  ~  8  K  than  the  value  reported  for  bulk  specimens.   This 8 discrepancy most likely stems from compressive strain, as the highest T C ever reported for thin film specimens epitaxially grown on SrTiO3 substrates is ~ 152 K,  identical to 7 ours. Since Ru vacancies are known to reduce T C, 43 the high T C value confirms that our films  were  free  from  Ru  deficiencies.  Moreover,  the  low  residual  resistivity  of  2.70 𝜇Ω · cm  at  4  K  means  that  there  were  few  defects  and  little  off-stoichiometry,  which contributed to the high RRR. 8,11,12

Figure  7(b)  plots  the  magnetization  versus  magnetic  field  curves  at  10  K  with  a magnetic field applied to the out-of-plane [001] or in-plane [100] direction of the SrTiO3 substrate. The saturation magnetization along the out-of-plane [001] direction was 1.25 𝜇 B/Ru,  which  is  a  typical  value  for  bulk  and  thin-film  specimens.   In  contrast,  the 8 magnetization  along  the  in-plane  [100]  direction  did  not  saturate  even  at  4  T.  This indicates that the easy direction of magnetization was perpendicular to the film surface, as  is  the  case  with  compressively  strained  SrRuO3  films  on  SrTiO3  substrates. 7,44,45 Perpendicular  magnetic  anisotropy  is more  advantageous  than  in-plane  magnetic anisotropy  for  spintronics  applications;  the  magnetic  configuration  is  more  thermally stable  and  the  spin-transfer  switching  current  is  lower. 46,47 Notably,  the  ratio  of  the magnetization along the out-of-plane [001] direction at 2 T to that along the in-plane [100] direction is 2.9, which is about twice as large as those reported for SrRuO3 films (1.4-1.7) on SrTiO3. 7,45 Since magnetic anisotropy in magnetic oxides is often reduced by grain boundaries  and  other  defects, 48-50 the  strong  perpendicular  magnetic  anisotropy  is  a hallmark of the excellent crystallinity of our SrRuO3 films. In addition, as shown in Fig. 7(b), the coercive field H c was ~ 0.1 T along both the easy and hard axes. This value is smaller  than  those  previously  reported  for  SrRuO3  films  ( H c &gt;  0.2  T). 7,8,45 Since  the magnetic domains tends to be pinned by grain boundaries and other defects, the small H c would also have stemmed from the higher crystallinity. 7

Altogether,  the  above  results  indicate  that  these  SrRuO3  thin  films  prepared  by machine-learning-assisted  MBE  had  high  crystalline  quality  and  strong  perpendicular magnetic anisotropy.

## IV. SUMMARY

We demonstrated machine-learning-assisted MBE  growth utilizing the BO algorithm for optimization of the growth parameters and grew SrRuO3 films whose RRR values were over 50. SrRuO3 films with RRRs over 10, 20, 40, and 50 were developed in four, five, 12, and 24 MBE growth runs. The SrRuO3 films grown under the optimized conditions showed high crystalline quality and strong perpendicular magnetic anisotropy. The algorithm presented here will play an important role in thin-film growth of various materials, as it offers an efficient experimental design platform that is not as dependent on the experience and skills of individual researchers. Since the algorithm provides the growth condition that should be examined in the next run, we foresee that the optimization process can be automated to work in combination with automatic thin-film growth 51 53 -and characterization systems.

## ACKNOWLEDGEMENT

We thank Ai Ikeda for her help with the maintenance of the MBE system.

## Figures and figure captions

FIG. 1. Flowchart of machine-learning-assisted MBE growth of SrRuO3 thin films based on the BO algorithm.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00739v1-figure-923fbaa8-187d-485b-b136-fb37300383a0.jpg)

FIG. 2. Experimental and predicted RRR values with (a) five random initial Ru flux rates and with (b) seven, (c) nine, and (d) eleven Ru flux rates determined by the BO algorithm. Here, the EI values are also shown in the lower panels. The black filled circles, blue solid curves,  and  red  dashed  curves  represent  the  experimental  RRR,  predicted  RRR,  and predicted  RRR  ± σ ,  respectively.  In  (a)-(c),  the  purple  dashed  lines  represent  the  next sampling points.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00739v1-figure-102f8d26-3cc3-4f2a-99ee-a39f3d779b6d.jpg)

FIG. 3. Experimental and predicted RRR values with (a) four initial growth temperatures and with (b) six, (c)  nine,  and  (d)  eleven  growth  temperatures  determined  by  the  BO algorithm. Here, the EI values are also shown in the lower panels. The black filled circles, blue solid curves, and red dashed curves represent the experimental RRR, predicted RRR, and predicted RRR ± σ , respectively. In (a)-(c), the purple dashed lines represent the next sampling points.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00739v1-figure-7cb7313e-ea34-4ada-9f99-9fa6cfd246cf.jpg)

FIG. 4. Experimental RRR and predicted RRR values with (a) three initial O3-nozzle-tosubstrate  distances  and  with  (b)  five, (c)  seven, and  (d)  eleven  O3-nozzle-to-substrate distances  determined by the BO algorithm. Here, the EI values are also shown in the lower panels. The black filled circles, blue solid curves, and red dashed curves represent the experimental RRR, predicted RRR, and predicted RRR ± σ ,  respectively. In (a)-(c), the purple dashed lines represent the next sampling points.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00739v1-figure-3f869507-f39e-4735-b27a-e030d98db52b.jpg)

FIG. 5. Highest experimental RRR values plotted as a function of the total number of MBE growth runs.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00739v1-figure-861dca37-914c-43e0-be7d-53fab2156538.jpg)

FIG. 6. (a) RHEED pattern (b) AFM image, (c) θ -2 θ scanned XRD pattern, and (d) crosssectional  HAADF-STEM image of a SrRuO3 thin film with the  RRR of  over  50.  (e) Magnified image near the interface in (d). (f) Magnified image near the interface in (e). In (a), the incident electron beam is parallel to the [110] axis of the SrTiO3 substrate. In (b), the scan area is 1 × 1 µ m 2 . In (d)-(f), images are taken along the [110] direction of the SrTiO3 substrate.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00739v1-figure-a7a5430d-480f-4d44-8af0-7dee4319d049.jpg)

FIG. 7. (a)  Resistivity  versus temperature curve (red curve) and magnetization versus temperature curves of a SrRuO3 film with the RRR of over 50. The magnetization versus temperature curves were measured in a field-cooled cooling process with a magnetic field of  100  Oe  applied  to  the  out-of-plane  [001]  (green  filled  circles)  and  in-plane  [100] (purple  filled  circles)  directions  of  the  SrTiO3  substrate.  In  (a),  the  black  dashed  line indicates T C. (b) Magnetization versus magnetic field curves at 10 K with magnetic fields applied  to  the  out-of-plane  [001]  (green  circles)  and  in-plane  [100]  (purple  circles) directions of the SrTiO3 substrate.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00739v1-figure-8846fbad-ba22-4d88-9136-4fb57963db71.jpg)

## References

- 1 J. J. Randall and R. Ward, J. Am. Chem. Soc. 81 , 2629 (1958).
- 2 J. M. Longo, P. M. Raccah, and J. B. Goodenough, J. Appl. Phys. 39 , 1327 (1968).
- 3 R. J. Bouchard and J. L. Gillson, Mater. Res. Bull. 7 , 873 (1972).
- 4 L. Klein and J. S. Dodge, C. H. Ahn, J. W. Reiner, L. Mieville, T. H. Geballe, M. R. Beasley, and A. Kapitulnik, J. Phys. Condens. Matter 8 , 10111 (1996).
- 5 C. B. Eom, R. J. Cava, R. M. Fleming, J. M. Phillips, R. B. Vandover, J. H. Marshall, J. W. Hsu, J. J. Krajewski, and W. F. Peck, Science, 258 , 1766 (1992).
- 6 X. D. Wu, S. R. Foltyn, R. C. Dye, Y . Coulter, and R. E. Muenchausen, Appl. Phys. Lett. 62 , 2434 (1993).
- 7 M. Izumi, K. Nakazawa, Y. Bando, Y. Yoneda, and H. Terauchi, J. Phys. Soc. Jpn. 66 , 3893 (1997).
- 8 G. Koster, L. Klein, W. Siemons, G. Rijnders, J. S. Dodge, C. B. Eom, D. H. A. Blank, M. R. Beasley, Rev. Mod. Phys., 84 , 253 (2012).
- 9 D.  Kan,  M.  Mizumaki,  T.  Nishimura,  and  Y.  Shimakawa,  Phys.  Rev.  B, 94 ,  214420 (2016).
- 10 H. P. Nair, Y. Liu, J. P. Ruf, N. J. Schreiber, S. L. Shang, D. J. Baek, B. H. Goodge, L. F. Kourkoutis, Z. K. Liu, K. M. Shen, and D. G. Schlom, APL Mater. 6 , 046101 (2018). W. Siemons, G. Koster, A. Vailionis, H. Yamamoto, D. H. A. Blank, and M. R. Beasley,
- 11 Phys. Rev. B 76 , 075126 (2007).
- 12 J. Thompson, J. Nichols, S. Lee, S. Ryee, J. H. Gruenewald, J. G. Connell, M. Souri, J. M. Johnson, J. Hwang, M. J. Han, H. N. Lee, D.-W. Kim, and S. S. A. Seo, Appl. Phys. Lett., 109 , 161902 (2016).
- 13 D. E. Shai, C. Adamo, D. W. Shen, C. M. Brooks, J. W. Harter, E. J. Monkman, B. Burganov, D. G. Schlom, and K.M. Shen, Phys. Rev. Lett. 110 , 087004 (2013).
- 14 A. Mackenzie, J. W. Reiner, A. W. Tyler, L. M. Galvin, S. R. Julian, M. R. Beasley, T. H. Geballe, and A. Kapitulnik, Phys. Rev. B 58 , R13318 (1998).
- 15 H.  Boschker,  T.  Harada,  T.  Asaba,  R.  Ashoori,  A.  V .  Boris,  H.  Hilgenkamp,  C.  R. Hughes, M. E. Holtz, L. Li, D. A. Muller, H. Nair, P. Reith, X. R. Wang, D. G. Schlom, A. Soukiassian, and J. Mannhart, Phys. Rev. X 9 , 011027 (2019).
- 16 D. C. Worledge and T. H. Geballe, Phys. Rev. Lett. 85 , 5182 (2000).
- 17 K. S. Takahashi, A. Sawa, Y. Ishii, H. Akoh, M. Kawasaki, and Y. Tokura, Phys. Rev. B 67 , 094413 (2003).
- 18 T. Mueller, A. G. Kusne, and R. Ramprasad, Reviews in Computational Chemistry, Vol. 29 (Wiley, Hoboken, 2015).
- 19 T.  Lookman,  F.  J.  Alexander,  and  K.  Rajan,  Information  Science  for  Materials Discovery and Design (Springer, Cham, 2016).
- 20 E.  Burnaex  and  M.  Panov,  Statistical  Learning  and  Data  Sciences  (Springer,  Cham, 2015).
- 21 A. Agrawal and A. N. Choudhary, APL Mater. 4 , 053208 (2016).
- 22 K. Rajan, Mater. Today 8 , 38 (2005).
- 23 A. Seko, T. Maekawa, K. Tsuda, and I. Tanaka, Phys. Rev. B, 89 , 054303 (2014).

- 24 A. Seko, A. Togo, H. Hayashi, K. Tsuda, L. Chaput, and I. Tanaka, Phys. Rev. Lett., 115 , 205901 (2015).
- 25 A. Roekeghem, J. Carrete, C. Oses, S. Curtarolo, and N. Mingo, Phys. Rev. X, 6 , 041061 (2016).
- 26 P. V. Balachandran, A. A. Emery, J. E. Gubernatis, T. Lookman, C. Wolverton, and A. Zunger, Phys. Rev. Mater., 2 , 43802 (2018).
- 27 M. Yamawaki, M. Ohnishi, S. Ju, and J. Shiomi, Sci. Adv., 4 , eaar4192 (2018).
- 28 M. Scherbela, L. Hšrmann, V. Obersteiner, and O. T. Hofmann, Phys. Rev. Mater., 2 , 043803 (2018).
- 29 F. Oba and Y. Kumagai, APEX. 11 , 060101 (2018).
- 30 V. Stanev, C. Oses, A. G. Kusne, E. Rodriguez, J. Paglione, S. Curtarolo, and I. Takeuchi, npj Comput. Mater., 4 , 29 (2018).
- 31 T. Ueno, H. Hino, A. Hashimoto, Y. Takeichi, M. Sawada, and K. Ono, npj Comput. Mater., 4 , 4 (2018).
- 32 F. Ren, L. Ward, T. Williams, K. J. Laws, C. Wolverton, J. H. Simpers, A. Mehta, Sci. Adv., 4 , eaaq1556 (2018).
- 33 Y. K. Wakabayashi, T. Otsuka, Y. Taniyasu, H. Yamamoto, and H. Sawada, APEX 11 , 112401 (2018).
- 34 X. Li, X. Li, Z. Hou, S. Gao, Y . Zeng, J. Ao, Z. Zhou, B. Da, W. Liu, Y. Sun, and Y . Zhang et al., Sol. RRL 2 , 1800198 (2018).
- 35 Z. Hou, Y. Takagiwa, Y. Shinohara, Y. Xu, and K. Tsuda, ACS Appl. Mater. Interfaces, 11 , 11545 (2019).
- 36 J. Snoek, H. Larochelle, and R. P . Adams, Advances in Neural Information Processing Systems 25 , (2012).
- 37 M. Naito and H. Sato, Appl. Phys. Lett. 67 , 2557 (1995).
- 38 H. Yamamoto, Y. Krockenberger, and M. Naito, J. Cryst. Growth 378 , 184 (2013).
- 39 Y.  K.  Wakabayashi,  Y .  Krockenberger,  N.  Tsujimoto,  T.  Boykin,  S.  Tsuneyuki,  Y . Taniyasu, and H. Yamamoto, Nat. Commun. 10 , 535 (2019).
- 40 D. R. Jones, M. Schonlau, and W. J. Welch, J. Glob. Optim. 13 , 455 (1998).
- 41 J.  Mockus,  V.  Tiesis,  and  Antanas  Zilinskas,  Towards  Global  Optimization 2 ,  117 (1978).
- 42 J.B. Nelson and D.R. Riley, Proc. Phys. Soc. 57 , 477 (1945).
- 43 B. Dabrowski, O. Chmaissem, P. W. Klamut, S. Kolesnik, M. Maxwell, J. Mais, Y . Ito, B. D. Armstrong, J. D. Jorgensen, and S. Short, Phys. Rev. B 70 , 014423 (2004).
- 44 L. Klein, J. S. Dodge, T. H. Geballe, A. Kapitulnik, A. F. Marshall, L. Antognazza, and K. Char, Appl. Phys. Lett. 66 , 2427 (1995).
- 45 K. Terai, T. Ohnishi, M. Lippmaa, H. Koinuma, and M. Kawasaki, Jpn. J. Appl. Phys. 43 , 227 (2004).
- 46 M.  Nakayama,  T.  Kai,  N.  Shimomura,  M.  Amano,  E.  Kitagawa,  T.  Nagase,  M. Yoshikawa, T. Kishi, S. Ikegawa, and H. Yoda, J. Appl. Phys., 103 , 07A710 (2008).
- 47 S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, Nat. Mater., 9 , 721 (2010).
- 48 D. T. Margulies, F. T. Parker, M. L. Rudee, F. E. Spada, J. N. Chapman, P. R. Aitchison, and A. E. Berkowitz, Phys. Rev. Lett. 79, 5162 (1997).
- 49 Y. K. Wakabayashi, Y. Nonaka, Y. Takeda, S. Sakamoto, K. Ikeda, Z. Chi, G. Shibata,

- A. Tanaka, Y. Saitoh, H. Yamagami, M. Tanaka, A. Fujimori, and R. Nakane, Phys. Rev. B 96 , 104410 (2017).
- 50 Y. K. Wakabayashi, Y. Nonaka, Y. Takeda, S. Sakamoto, K. Ikeda, Z. Chi, G. Shibat, A. Tanaka, Y. Saitoh, H. Yamagami, M. Tanaka, A. Fujimori, and R. Nakane, Phys. Rev. Mater. 2 , 104416 (2018).
- 51 J. Sakai, S. I. Murakami, K. Hirama, T. Ishida, and Z. Oda, J. Vac. Sci. Technol. B 6 , 1657 (1988).
- 52 M. OÕSteen, E. Readinger, S. Farrell, M. Marek, M. Doran, and D. Hanser, in Molecular Beam Epitaxy From Research to Mass Production, edited by M. Henini, (Elsevier Inc., 2018), pp. 649-675.
- 53 D.P.  Tabor,  L.  M.  Roch,  S.K.  Saikin,  C.  Kreisbeck,  D.  Sheberla,  J.  H.  Montoya,  S. Dwaraknath, M. Aykol, C. Ortiz, H. Tribukait, C. Amador-Bedolla, C. J. Brabec, B. Maruyama, K. A. Persson, and A. A. Guzik, Nat. Rev. Mater. 3 , 5 (2018).
Yuki K. Wakabayashi Takuma Otsuka Yoshiharu Krockenberger Hiroshi Sawada Yoshitaka Taniyasu Hideki Yamamoto
Machine-learning-assisted thin-film growth: Bayesian optimization in molecular beam epitaxy of SrRuO3 thin films
Materials informatics exploiting machine learning techniques, e.g., Bayesian
optimization (BO), has the potential to offer high-throughput optimization of
thin-film growth conditions through incremental updates of machine learning
models in accordance with newly measured data. Here, we demonstrated BO-based
molecular beam epitaxy (MBE) of SrRuO3, one of the most-intensively studied
materials in the research field of oxide electronics, mainly owing to its
unique nature as a ferromagnetic metal. To simplify the intricate search space
of entangled growth conditions, we ran the BO for a single condition while
keeping the other conditions fixed. As a result, high-crystalline-quality
SrRuO3 film exhibiting a high residual resistivity ratio (RRR) of over 50 as
well as strong perpendicular magnetic anisotropy was developed in only 24 MBE
growth runs in which the Ru flux rate, growth temperature, and
O3-nozzle-to-substrate distance were optimized. Our BO-based search method
provides an efficient experimental design that is not as dependent on the
experience and skills of individual researchers, and it reduces experimental
time and cost, which will accelerate materials research.