## Harnessing Ferro-Valleytricity in Penta-Layer Rhombohedral Graphene for Memory and Compute

Md Mazharul Islam 1 , Shamiul Alam , Md Rahatul Islam Udoy , Md Shafayat Hossain , Kathleen 1 1 2 E Hamilton 3 , and Ahmedullah Aziz 1*

1 Dept. of Electrical Eng. and Computer Sci., University of Tennessee, Knoxville, TN, 37996, USA 2 Dept. of Physics, Princeton University, Princeton, NJ, 08544, USA 3 Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA * Corresponding Author. Email: aziz@utk.edu

AbstractTwo-dimensional materials with multiple degrees of freedom, including spin, valleys, and orbitals, open up an exciting avenue for engineering multifunctional devices. Beyond spintronics, these degrees of freedom can lead to novel quantum effects such as valley-dependent Hall effects and orbital magnetism, which could revolutionize next-generation electronics. However, achieving independent control over valley polarization and orbital magnetism has been a challenge due to the need for large electric fields. A recent breakthrough involving penta-layer rhombohedral graphene has  demonstrated  the  ability  to  individually  manipulate  anomalous  Hall  signals  and  orbital magnetic  hysteresis,  forming  what  is  known  as  a  valley-magnetic  quartet.  Here,  we  leverage  the electrically  tunable  Ferro-valleytricity  of  penta-layer  rhombohedral  graphene  to  develop  nonvolatile memory and in-memory computation applications. We propose an architecture for a dense, scalable, and selector-less non-volatile memory array that harnesses the electrically tunable ferrovalleytricity.  In  our  designed  array  architecture,  non-destructive  read  and  write  operations  are conducted  by  sensing  the  valley  state  through  two  different  pairs  of  terminals,  allowing  for independent optimization of read/write peripheral circuits.  The power consumption of our PRGbased array is remarkably low, with only ~ 6 nW required per write operation and ~ 2.3 nW per read operation per cell. This consumption is orders of magnitude lower than that of the majority of state-of-the-art cryogenic memories. Additionally, we engineer in-memory computation by implementing majority logic  operations within  our  proposed  non-volatile  memory  array  without modifying  the  peripheral  circuitry.  Our  framework  presents  a  promising  pathway  toward achieving ultra-dense cryogenic memory and in-memory computation capabilities.

Index  TermsMultiferroics,  Valleytronics,  Ferroelectric,  Anomalous  Hall  Effect,  and  Voltagecontrolled logic.

## Introduction

The manipulation of the electron's spin degree of freedom has given rise to the field of spintronics which led the researchers to create and envision spin-based functional devices [1], [2]. In several solids, such as Si,  Ge,  Bi  and  in  several  2D  materials  (AlAs,  graphene,  and  MoS2),  electrons  exhibit  an  additional property known as valley, where they occupy multiple minima in the conduction band or valleys in the Brillouin zone [3]-[8]. This discovery has paved the way for valleytronics, wherein the manipulation of electron valley occupancy enables the creation of functional devices [7]. Throughout the last two decades, researchers have been investigating the field of valleytronics to uncover its theoretical and experimental aspects to explore a wide range of practical applications [9], [10]. Valley polarization, due to its orbital nature,  is  more  easily  achieved  through  external  stimuli  such  as  electric  fields,  magnetic  fields,  and circular polarization  of  light [11]-[13].  Similarly,  orbital  magnetization,  another  characteristic  of

electrons,  depends  on  quantum  geometric  effects  and  can  be  controlled  in  the  same  way  as  valley polarization [11]-[14]. However, realizing functional electronic devices based on valley polarization is challenging, typically requiring large electric fields for the valley switching process [15]-[19]. Researchers  are  constantly  exploring  for  new  device  structures  across  various  domains  to  achieve independent tunability of valley-dependent Hall effect and orbital magnetism [20], [21]. However, this endeavor remains challenging due to the intertwined nature of these phenomena and material constraints [22]-[26]. Han et al. have recently demonstrated a four-terminal device based on pentalayer rhombohedral graphene (PRG) that can offer independent tunability of valleys and orbital magnetization thereby forming a valley-magnetic quartet [27]. While this device holds promise for advancing research in valleytronics at cryogenic temperatures, its potential for functional device applications, particularly in memory and logic operations, remains unexplored [27].

Given  that  valley  tuning  experiments  are  typically  demonstrated  at  low  temperatures,  it  is  natural  to explore  cryogenic  applications  of  valleytronic  phenomena.  In  fact,  cryogenic  devices  have  garnered significant  attention  in  recent  years  due  to  their  remarkable  power  efficiency  and  ultrafast  switching characteristics  [28]-[32]. Cryogenic memory technologies, capable of functioning at temperatures below 4  Kelvin  (K),  are  widely  being  researched  in  both  classical  and  quantum  computing  frameworks[33], [34].  Leveraging  the  PRG-based device for cryogenic operation can  catalyze the research prospects of cryogenic valleytronics for next-generation memory and logic devices with superior performance.  Here, we exploit the non-volatile valley state of the PRG device to propose ultra-low power, selector-less nonvolatile  memory  device  for  cryogenic  application.  Additionally,  we  engineer  in-memory  computation within our proposed PRG-based array architecture by implementing in-memory majority logic operations.

## Device Characteristics and Modeling Approach of Pentalayer Rhombohedral Graphene

To investigate orbital multiferroicity, the device utilizes stacked three layers of PRG sheets interleaved with hexagonal boron nitride (hBN) layers (Fig. 1(a)) [27]. This material configuration is essential for fabricating  a  dual-gated  Hall  bar  device  (Fig.  1(a)),  enabling  independent  manipulation  of  valley  and orbital  magnetization,  thereby  forming  a  valley-magnetic  quartet.  By  introducing  hole-doping  into  the graphene layer, orbital magnetic hysteresis was successfully induced under a constant gate electric field. Furthermore,  sweeping  the  gate  electric  field  triggers  hysteretic  valley  polarization,  leading  to  bipolar hysteretic Hall voltages. We leverage the characteristics of valley-driven hysteretic Hall voltage in our proposal, while reserving the utilization of orbital magnetization switching for future research endeavors.

For our investigation, we have developed a Verilog-A-based behavioral circuit model of the PRG-based Hall  bar  device  that's  compatible  with  SPICE,  enabling  circuit-based  simulation-driven  analysis.  The model effectively captures the behavioral dependency of the Hall resistance on the applied gate electric field  as  reported  in  [27]  (Figs.  1(b,c)).  Fig.  1(c)  depicts  the  characteristic  of Rxy as  a  function  of  the applied electric field showcasing the behavioral accuracy of our model. We identify two critical electric fields ( EC+ and EC)  necessary for valley polarization switching (Figs. 1(b,c)). To accurately predict the induced  Hall  voltage  ( Vxy )  (Figs.  2(a,c)),  we  have  extracted  the  longitudinal  resistance  ( Rxx )  for  zero applied magnetic field as shown in Fig. 2(b). For conducting circuit-level simulations of our proposed memory  and  logic  circuit,  we  utilize  HSPICE,  a  cutting-edge  circuit  simulation  tool  [35].  Further elaboration  on  the  operation  of  the  proposed  memory,  logic,  and  logic-in-memory  is  provided  in  the subsequent sections.

## PRG-based Non-volatile Memory Array

We start our discussion by delineating the dynamics of PRG-based dual gated Hall bar device and how it can be utilized for non-volatile memory array application. The structural arrangement of the device and our proposed array structure is depicted in Figs. 3(a,b), while Fig. 3(c) illustrates the symbol adopted for illustrative  representation.  When  an  electric  field  is  applied  between  the  two  gates,  it  induces  a longitudinal current across the PRG layer, leading to a Hall voltage between the transverse terminals of the  device  (Fig.  2(c)).  Fig.  1(b)  depicts  the  electric  field  dependency  of  the  valley  polarization  in  the device  under  consideration.  We  define  the  electron  valley  state  K  and  K'  as  '0'  and  '1'  respectively. Based on this definition, we can delineate three distinct regions of applied gate voltage ( VGATE ) (Fig. 2(c)). (i) 𝑉𝐺𝐴𝑇𝐸 ≤ 𝑉 𝐶: write '0' region, (ii) 𝑉𝐶+ ≤  𝑉 𝐺𝐴𝑇𝐸 ≤ 𝑉 𝐶+ : read region, and (iii) 𝑉𝐺𝐴𝑇𝐸 ≥ 𝑉 𝐶+ : write '1' region. At  a  critical  switching  electric  field  ( VC+ ) of  ±  16  mV,  a  transition  occurs  in  the  valley polarization,  switching  between  K  and  K'  valleys.  We  exploit  this  hysteretic  valley  polarization  to propose a novel non-volatile memory structure. Here, the write operation of '0' and '1' requires opposite polarity  of 𝑉𝐺𝐴𝑇𝐸 ,  whereas  for  the  read  operation,  we  only  use  positive  voltage  for  the  read  operation ( 𝑉𝐶+ ≤  𝑉 𝑅𝐸𝐴𝐷 ≤ 𝑉 𝐶+ ). The trajectory of the Hall voltage variation with the applied electric field for both the valley polarizations are illustrated in Fig.  2(c). As shown in the figure, two different signs of Hall resistance ( Rxy ) are observed for the two different valley polarizations. The induced Hall voltage can be estimated as, 𝑉𝐻𝐴𝐿𝐿 = 𝑉𝑅𝐸𝐴𝐷 𝑅𝑥𝑥 ×𝑅𝑥𝑦 , where Rxx is the longitudinal resistance of the PRG memory cell (Fig. 2(b)). Consequently, two different signs of Hall voltages across the memory cell's transverse terminals are induced for the two distinct stored memory states (Fig. 2(c)). Fig. 2(a) presents the simulation waveform illustrating the read and write operations of a single PRG-based memory device.

To evaluate the practicality of a memory, it is crucial to design an array architecture and investigate its array-level performance. Fig. 3(b) illustrates our proposed memory array architecture. Each memory cell is  sandwiched  between  orthogonally  running  bit-lines  (BLs)  and  word-lines  (WLs).  The  transverse terminals of each memory cell are cascaded to obtain the accumulated induced Hall voltage in a single row (Fig. 3(b)). A single row-output is fed to a comparator input to amplify the accumulated Hall voltages in a single row. Each word line is linked to the top gates (TG) of the PRG cells, while the bottom gates (BG) of each column are connected to individual bit-lines (BL). The DC voltage difference between the TG  and  BG  effectively  dictates  the  applied  electric  field  inducing  a  transverse  Hall  voltage  that  is subsequently sensed in the output comparator.  Our proposed array architecture eliminates the need for selector devices for individual memory cell access. We introduce distinct biasing schemes for both read and write operations, facilitating a selector-less memory array design. Selector-less memory devices offer potential  for  highly  scalable  memory  technology  with  reduced  cost  and  complexity.  During  read operations, our array architecture accesses each column independently, while during write operations, it allows for individual access for each memory cell.

## Read/Write Operations

Figs.  3(d,e)  provide  a  comprehensive  overview  of  the  complete  read  operation  in  our  proposed  array architecture. As shown in Fig. 2(c), non-zero Hall voltage is induced for a non-zero applied DC voltage. Hence, it is crucial to ensure that all other cells in a single row, except the one being accessed, receive zero electric field or zero DC voltage difference. In our proposed biasing scheme for the read operation, all the unaccessed cells in a single row have zero DC voltage difference between the TG and BG. To read

the stored data from the accessed column, an access voltage ( VACC ) is applied to all the rows (WLs) (Figs. 3(d,e)). In our analysis, we assume the first column as the accessed column and analyze its read operation. All the unaccessed columns receive a non-zero read voltage, VACC = VREAD. This way, all the cells in the accessed column receive a DC voltage difference of VREAD = 10 mV, and the corresponding Hall voltage of each of these cells are reflected in the comparator input after amplification. If the k th cell of the  th row i is  being  accessed  for  the  read  operation,  the  resultant  terminal  voltage  at  the  amplifier  input  can  be expressed as:

$$V _ { h r - i } \, = \, \sum _ { j = 1 } ^ { n } V _ { x y - i j } - 2 n \times V _ { l o s s } = \frac { V _ { b i a s - i k } } { R _ { x x - i k } } \times R _ { x y - i k } - 2 n \times V _ { l o s s } \\ \cdot \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \,. \end{cases}$$

Here, n is  the  total  number  of  PRG  cells  in  a  single  row  and 𝑉𝑙𝑜𝑠𝑠 is  the  voltage  drop  in  the  Cr/Au connectors. The induced Hall resistance in all the unaccessed cells within a single row is effectively zero due to the application of zero longitudinal DC voltage across them. In our proposed array architecture, VREAD is  set  to  8  mV,  ensuring  reliable  read  operation  with  maximum  read  margin  of  ~8  mV.  In  our analysis, we designate the first column as the accessed column. Fig. 3(e) illustrates the read operation of the first column. Our proposed PRG-based memory array consumes ~2.3 nW per read operation per cell which is significantly lower than that of the state-of-the-art cryogenic memories[36]-[40] All unaccessed cells  in  our  designed  array  architecture  receive  zero voltage,  effectively  addressing concerns related to leakage  signals  commonly  encountered  in  partially  accessed  (i.e.,  half-accessed)  cells  in  conventional memory devices.

Figs. 3(d,f) offer a brief overview of the write scheme implemented in our proposed array architecture. For individual memory cell access during write operations, we employ a standard biasing scheme known as  V/2  biasing.  In  this  setup,  the  WL  of  the  targeted  cell  receives  a  write  voltage VWRITE ,  such  that 𝑉𝑊𝑅𝐼𝑇𝐸 ≥ 𝑉 𝐶+ for 0 → 1 transition and 𝑉𝑊𝑅𝐼𝑇𝐸 ≤ 𝑉 𝐶for 1 → 0 transition. All the other WLs are kept at 𝑉𝑊𝑅𝐼𝑇𝐸 2 . To ensure that the targeted cell receives a full switching voltage, the corresponding BL is set to 0V, while all the other BLs receive a voltage of 𝑉𝑊𝑅𝐼𝑇𝐸 2 . The other memory cells in the accessed row or column are referred to as half-accessed cells, as the inactive cells in this row or column receive half of the access voltage. All the other cells ideally have zero voltage across them. As an example, we consider M1,1 as the accessed cell to examine its write operation for 0 → 1 transition as illustrated in Fig. 3(b). Here, only the accessed cell (M1,1) exhibits a transition of the valley state which is reflected by the change of the Hall voltage sign during read operation. All the half-accessed and unaccessed cells remain unaffected.  Here, VREAD has  the  same  sign  as VWRITE required  for  0 → 1  transition.  Hence,  the  chosen  polarity  of VREAD prevents the accidental 1 → 0 data flip. Moreover, the magnitude of the read voltage is about half of the critical voltage required for transition ( VC+ ), alleviating the possibility of the accidental data overwrite of 0 → 1. The power consumption for the write operation is estimated to be ~6 nW per cell, which is orders of magnitude lower than the state-of-the-art cryogenic memory technologies[36], [37].

## In-memory Computation based on PRG-based Non-volatile Memory Array

Cryogenic in-memory computation offers substantial advantages in terms of energy efficiency and speed due to the characteristics of the cryogenic environment. Additionally, in-memory computation serves as a promising  solution  to  overcome  the  bottlenecks  associated  with  von-Neumann  architecture  and  the memory wall. In light of the ongoing trend of exploring non-volatile devices for in-memory computation, here, we explore cryogenic in-memory Majority logic based on the PRG-based Hall bar device. Majority

logic is a Boolean logic primitive which generates an output of logic '1' when there is a greater number of logic '1' in the inputs. It is a fundamental component for implementing various functions such as adders, multiplexers, encoders, and decoders. Majority function along with the NOT gate creates a functionally complete  set,  and,  in  several  technologies,  majority  logic  is  easier  to  implement.    Thanks  to  these advantages, Majority logic has been extensively explored for in-memory computational architectures.

In Fig. 4(a), we present the schematics of a 5-input Majority gate implemented within a single row of the previously  discussed  array  setup.  The  comparator  reference  is  set  to  0V  to  sense  the  polarity  of  the induced Hall voltage at the row output as shown in Fig.  4(a,b). The simulation results for all possible input combinations are illustrated in Fig. 4(b), showcasing six different levels of voltages at the output of the voltage amplifier after applying suitable VBias to the input storage cells. We leverage the bipolarity of the PRG Hall resistance to create a linear relationship between the array output voltage and number of 'logic 1' in a single row (Fig. 4(c). When we apply the sense enable signal ( VEN ) to the sense amplifiers, we obtain the output of a 5-input majority gate at the sense amplifier output illustrated in Figs. 4(b,c). Similar  Majority  operations  with  varying  numbers  of  inputs  can  be  designed  by  energizing  the corresponding input storage cells in a single row. Fig. 4(d) summarizes the output Hall voltages and the corresponding output logic value for 3-input and 5-input majority operation in our PRG-based Hall bar cells. Our proposed majority operation provides a separation of about ~45 𝑚 A for sensing purposes.

## Discussion and Conclusion

The  distinctive  ferro-valleytricity  characteristic  offers  an  avenue  for  developing  innovative  functional devices with remarkable attributes. Our work leverages this feature in a device based on 2D pentalayer rhombohedral graphene, specifically tailored for non-volatile memory  applications in cryogenic environments. The Hall resistance was measured in a Bluefors LD250 dilution refrigerator at 100 mK as reported in [27]ss. We have developed a behavioral circuit model that accurately captures the non-volatile valley  state  and  estimates  the  induced  transverse  Hall  voltage  in  response  to  an  applied  DC  bias.  The device employs two separate pairs of terminals for its read and write operation. Leveraging this unique feature, we propose and analyze a unique memory array architecture. Our proposed biasing schemes show successful column-wise read operations and individual write operations. Additional analog components required for complete read and write operations are integrated into the array peripherals. Furthermore, we have engineered in-memory Majority logic operations using our proposed memory array. The architecture allows for the implementation of in-memory Majority functionality without necessitating modifications to the peripheral circuitry. Our proposed non-volatile memory architecture stands out as a promising choice for cryogenic memory systems due to its low operating temperatures. Notably, cryogenic memory block serves  as  a  pivotal  element  in  quantum  computing  setups  and  space  electronics,  where  our  proposed device can make a substantial impact.

## Data Availability

The data that support the plots within this paper and other finding of this study are available from the corresponding author upon reasonable request.

## Author Contributions

M.M.I conceived the idea, designed the memory array, and performed the simulations. S.A., M.R.I.U., analyzed and helped finalizing the designs. M.S.H. provided insights into the majority logic operation. A.A. supervised the project. All authors commented on the results and wrote the manuscript.

## Competing Interests

The authors declare no competing interests.

## Acknowledgement

The work of Md Mazharul Islam and Shamiul Alam was supported by the Science Alliance, a Tennessee Higher Education Commission Center of excellence administered by The University of Tennessee-Oak Ridge Innovation Institute on behalf of The University of Tennessee Knoxville.

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Fig.  1.  Device  characteristics  of  the  pentalayer  rhombohedral  graphene  (PRG)-based  Hall  bar device. (a) Schematics of the dual-gated device. ( b) Valley polarization plot illustrating the dependence on  the  applied  electric  field,  with  marked  switching  values  of  the  electric  fields  ( E C + and E C-). ( c) Transverse Hall resistance ( Rxy ) characteristics induced by the applied gate electric field. The solid curve represents  the  characteristics  of  the  developed  behavioral  model  ('red'  curve  for  forward  sweep  and 'blue' curve for backward sweep), and dotted values indicate the experimental data. The measurement was measured in a dilution refrigerator with an electronic temperature of around 100 mK [30].

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01028v1-figure-310d0aad-e719-4565-9345-1b363fc70667.jpg)

Fig. 2. Memory operation of the PRG-based Hall bar device. (a) Simulation waveform illustrating the read/write  operation  of  an  individual  PRG-based  Hall  bar  device.  The  write  '1'  operation  is  executed followed by a read operation. Subsequently, a write '0' operation is conducted, again followed by a read operation, demonstrating the induction of two different polarities of Hall voltages for distinct logic states. ( b) Extracted longitudinal resistance ( R xx ) utilized for estimating the Hall voltage ( V HALL ) depicted in (c). (c) Hall voltage ( V HALL ) induced across the transverse terminals of the PRG-based Hall bar device during the read operation. The applied DC bias chosen for the read operation ( V READ ) is marked.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01028v1-figure-d8677e14-4e62-4ee0-b7fd-dd0f3bfa7a0c.jpg)

Fig. 3. Array-level operation of the PRG-based memory. (a) Schematics of the PRG-based Hall bar device at the device level. (b) Proposed array architecture based on dual-gated Hall bar device. The four terminal device is positioned between perpendicular word lines (WLs) and bit lines (BLs). The transverse Hall terminals are cascaded to accumulate the total V HALL in a single row. (c) Symbol representation of the dual-gated PRG-based four-terminal Hall bar device. (d) Summary table (Table I) of biasing schemes for read/write operations in the depicted array architecture depicted in (b) . (e) Simulation waveform showing the read operation of the first column. (f) Simulation waveform illustrating the write operation of the accessed M 1,1 cell. Here, the valley polarization is illustrated instead of the induced Hall resistance.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01028v1-figure-eb243cda-e8b6-4b5d-b8d3-81b3a2a862d7.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01028v1-figure-d1de6650-5784-4cda-b90d-d45695dc6e7a.jpg)

| # Inputs   |   inputs |           |   Output Logic |
|------------|----------|-----------|----------------|
| 3 input    |        0 | - 68.6 mV |              0 |
| 3 input    |        1 | -23.8 mV  |              0 |
| 3 input    |        2 | +20.8 mV  |              1 |
| 3 input    |        3 | +65.5 mV  |              1 |
| 5 input    |        0 | -113 mV   |              0 |
| 5 input    |        1 | -68.6 mV  |              0 |
| 5 input    |        2 | -23.9 mV  |              0 |
| 5 input    |        3 | +20.8 mV  |              1 |
| 5 input    |        4 | +65.5 mV  |              1 |
| 5 input    |        5 | +110 mV   |              1 |

Time (ns)

Fig. 4. Majority gate operation utilizing the PRG-based memory array. (a) Schematics of a single row storing inputs for the 5-input majority gate operation. (b) Simulation waveform of a 5-input majority carrier operation for all possible input combinations. The output of the sense amplifier becomes '0' or '1' depending on the polarity of the accumulated Hall voltage ( V HALL-R ).  In our current model, we have not included the switching delay due to insufficient information. However, integrating the switching delay into  our  model  in  the  future  is  a  feasible  endeavor. (c) Different  levels  of  accumulated  induced  Hall voltage ( V HALL-R ) corresponding  to different numbers  of 'logic 1' inputs at the input terminal, demonstrating  a  linear  relationship. (d) Summary  table  (Table  II)  detailing  the  output VHALL-R and corresponding output logic for 3-input and 5-input majority gates.
Md Mazharul Islam Shamiul Alam Md Rahatul Islam Udoy Md Shafayat Hossain Kathleen E Hamilton Ahmedullah Aziz
Harnessing Ferro-Valleytricity in Penta-Layer Rhombohedral Graphene for Memory and Compute
Two-dimensional materials with multiple degrees of freedom, including spin,
valleys, and orbitals, open up an exciting avenue for engineering
multifunctional devices. Beyond spintronics, these degrees of freedom can lead
to novel quantum effects such as valley-dependent Hall effects and orbital
magnetism, which could revolutionize next-generation electronics. However,
achieving independent control over valley polarization and orbital magnetism
has been a challenge due to the need for large electric fields. A recent
breakthrough involving penta-layer rhombohedral graphene has demonstrated the
ability to individually manipulate anomalous Hall signals and orbital magnetic
hysteresis, forming what is known as a valley-magnetic quartet. Here, we
leverage the electrically tunable Ferro-valleytricity of penta-layer
rhombohedral graphene to develop non-volatile memory and in-memory computation
applications. We propose an architecture for a dense, scalable, and
selector-less non-volatile memory array that harnesses the electrically tunable
ferro-valleytricity. In our designed array architecture, non-destructive read
and write operations are conducted by sensing the valley state through two
different pairs of terminals, allowing for independent optimization of
read/write peripheral circuits. The power consumption of our PRG-based array is
remarkably low, with only ~ 6 nW required per write operation and ~ 2.3 nW per
read operation per cell. This consumption is orders of magnitude lower than
that of the majority of state-of-the-art cryogenic memories. Additionally, we
engineer in-memory computation by implementing majority logic operations within
our proposed non-volatile memory array without modifying the peripheral
circuitry. Our framework presents a promising pathway toward achieving
ultra-dense cryogenic memory and in-memory computation capabilities.