## Role of Self-Assembled Monolayers on Improved Electrical Stability of Amorphous In-Ga-Zn-O Thin-Film Transistors

Xiaosong Du,  Brendan T. Flynn,  Joshua R. Motley,  William F. Stickle,  Hendrik Bluhm, 1 1 1 2 3 Gregory S. Herman 1,a)

1 Oregon State University, School of Chemical, Biological, and Environmental Engineering, Corvallis, Oregon, 97331, USA

2 Hewlett Packard Company, 1000 Northeast Circle Boulevard,

Corvallis, Oregon 97330, USA

3 Lawrence Berkeley National Laboratory, Chemical Sciences Division, One Cyclotron Road,

Berkeley, CA 94720, USA

a) Author to whom correspondence should be addressed. Electronic mail: greg.herman@oregonstate.edu

KEYWORDS: thin film transistor, back channel passivation, bias stress test.

## ABSTRACT

Self-assembled  monolayers  (SAMs)  have  been  used  to  improve  both  the  positive  and negative bias-stress stability of amorphous indium gallium zinc oxide (IGZO) bottom gate thin film transistors (TFTs).  N-hexylphosphonic acid (HPA) and fluorinated hexylphosphonic acid (FPA) SAMs adsorbed on IGZO back channel surfaces were shown to significantly reduce biasstress turn-on voltage shifts compared to IGZO back channel surfaces with no SAMs. FPA was found to have a lower surface energy and lower packing density than HPA, as well as lower biasstress turn-on voltage shifts.  The improved stability of IGZO TFTs with SAMs can be primarily attributed  to  a  reduction  in  molecular  adsorption  of  contaminants  on  the  IGZO  back  channel surface and minimal trapping states present with phosphonic acid binding to the IGZO surface.

Indium  gallium  zinc  oxide  (IGZO)  is  a  very  promising  active  material  for  thin  film transistors (TFTs), especially when incorporated into flat panel and flexible displays. 1-4 IGZOTFTs  have relatively high average electron mobilities (  avg &gt;10 cm 2 /Vs) despite being amorphous,  and  have  been  demonstrated  to  have  excellent  performance  even  after  low temperature  processing  that  is compatible  with  polymeric  substrates. 1,5 IGZO-TFTs  may eventually replace  amorphous silicon TFT technologies for  many display  applications. 2,3 High electrical stability is an important requirement for display applications, since bias, current, and/or light induced instabilities may cause non-uniformities in relative brightness of individual pixels. High electrical stability is also critical for IGZO field effect sensors used for detecting gases, 6 temperature,  light,  or for deoxyribonucleic acid.  For these reasons the bias stress stability of 7 8 9 IGZO-TFTs has been intensely investigated where effects of composition, process temperature, process conditions, gate dielectric, back channel passivation, and many other factors have been evaluated. 10-15

Proposed  mechanisms  for  bias  stress  threshold  voltage  (Vth)  shifts  include  electron trapping  at  the  semiconductor/dielectric  interface,  electron  injection  into  the  dielectric,  or formation of sub-band gap states in the bulk of films. It has also been suggested that adsorbed species  (e.g.,  O2  and  H2O)  on  the  back  channel  of  the  IGZO-TFTs  can  be  the  dominant mechanism for device instability, by providing acceptor or donor states or through field induced adsorption  or  desorption  of  these  species. 17-20 For  example,  molecular  oxygen  can  form  a depletion  layer  at  the  back  channel  surface  through  electron  acceptor  states,  while  absorbed water can form an accumulation layer at the back channel surface through electron donor states. A  depletion  layer  results  in  a  positive  Vth shift,  whereas  an  accumulation  layer  results  in  a

negative  Vth  shift.  Recently  it  has  been  demonstrated  that  dense  passivation  layers 21 or  selfassembled monolayers (SAMs) 22 on IGZO-TFT back channels can significantly minimize these threshold voltage shifts.  A potential benefit of using SAMs for surface passivation is that one can obtain well controlled chemistries at the back channel interface, even when using polymeric dielectrics for flexible electronic applications or integrating polymeric sensing layers.

Herein we investigate the use of n-hexylphosphonic acid (n-HPA) and (3,3,4,4,5,5,6,6,6nonaflurohexyl)phosphonic acid (FPA) self-assembled monolayers (SAMs)  as molecular passivation layers for IGZO-TFT back channel surfaces. The goal of these studies is to evaluate the effects of surface energy and SAM molecular dipole on device performance.  IGZO surface chemistries  were  characterized  using  contact  angle  measurements,  positive  and  negative  bias stress turn-on voltage shifts, and X-ray photoelectron spectroscopy (XPS). Significant improvements in IGZO-TFT turn-on voltage (VON) stabilities were observed for both the HPA and  FPA  passivated  surfaces  compared  to  the  unpassivated  surfaces.    These  results  provide insight into the role of defect passivation at back channel surfaces of IGZO and other transparent amorphous oxide semiconductors (TAOS).

IGZO-TFT test structures were fabricated using a heavily p-doped Si substrate as the gate and  thermally  grown  SiO2  (100  nm)  as  the  gate  dielectric.  Substrates  were  cleaned  prior  to deposition of IGZO with acetone, isopropyl alcohol, and DI water. Amorphous IGZO films (~50 nm thick) were deposited using RF magnetron sputter deposition with a 3 in. IGZO target (molar composition:  In2O3:Ga2O3:ZnO),  100W  RF  power,  ~4  mTorr  chamber  pressure,  and  20  sccm flow  rate  with  a  1:19  (O :Ar)  ratio.  IGZO  active  layers  were  patterned  using  a  shadow  mask 2

during deposition, and the films were subsequently annealed in air to 300 ° C. Source and drain electrodes  were  patterned  using  a  shadow  mask  during  thermal  evaporation  of  Al  (~500  nm thick) giving a W/L ratio of 1000  m/100  m. Back channel surface passivation using SAMs was performed by UV-Ozone treatment for 5 minutes followed by immediate immersion of the IGZO-TFTs in 2mM n-HPA or FPA solution in 95% ethanol. Samples were removed from the solution, rinsed with 95% ethanol, and then dried with flowing nitrogen. The water contact angle was found to increase for increasing soak times due to adsorption of n-HPA or FPA molecules and a corresponding reduction in surface energy as a result of the alkane or fluorinated alkane groups  on  the  SAMs.  The  highest  contact  angles  for  n-HPA  and  FPA  treated  IGZO  surfaces, after  a  24  h  soak,  was  84°and 94° ,  respectively, compared to 23°  which was obtained for an IGZO surface after only the UV/Ozone treatment. A 24 h soak was used for all the IGZO-TFTs in this study. In order to remove physisorbed SAMs the samples were further sonicated in a 5% triethylamine/ethanol  solution,  rinsed  with  ethanol,  and  then  dried  with  nitrogen.  Duplicate IGZO-TFTs  were  fabricated  where  they  have  gone  through  identical  processing  steps  as  the passivated  samples,  other  than  n-HPA  or  FPA  soak.  A  schematic  of  the  device  structure  and possible bonding of n-HPA or FPA to the IGZO surface is shown in Figure 1.

All IGZO-TFT bias-stress measurements were performed in the dark at room temperature in air using an Agilent 4155C precision semiconductor parameter analyzer. Single sweep drainto-source  current  versus  gate  voltage  (IDS-VGS)  transfer  curves  were  measured  with  the  drain voltage (VDS) set to 1 V. Stress measurements were performed up to 10  s using an applied VGS 4 of  ± 10  V  (1  MV/cm)  with  VDS  set  to  0  V.  Synchrotron-based  XPS  measurements  were performed  using  a  specially  designed  endstation  at  the  undulator  beamline  11.0.2  at  the

Advanced Light Source. 23 A photon energy of h  = 735 eV was used to obtain surface sensitive spectra.  The data were acquired with a 90º emission angle and an electron analyzer pass energy of 10 eV. Laboratory-based XPS measurements were performed with a PHI Quantera Scanning ESCA system using monochromatized Al K  radiation with a 200 µ m spot size.  The data were acquired with a 45º emission angle and an electron analyzer pass energy of 69 eV. The XPS data were fit  using  CasaXPS, where the most intense peak in the spectrum  was used to define the core-level full-width-half-maximum (FWHM)  and  Gaussian-Lorentzian mixing. A  linear background was used to fit all spectra. The binding energies were charge corrected to the C 1s aliphatic carbon peak at 284.6 eV.

In Table 1 we provide  avg ,  V ON, drain current on-to-off ratio (ION/IOFF), and hysteresis (difference in the up and down sweeps in the IDS-VGS data) for unstressed devices with different surface  treatments.  Both  avg and  VON  were  extracted  using  methods  described  previously. 24 Only  very  small  changes  were  observed  in  avg , VON,  and  ION/IOFF,  irrespective  of  surface treatment,  where the major difference is a decrease in VON and a  reduction in hysteresis with adsorption of SAMs on the back channel surface.  In Figure 2, we show positive and negative bias  stress  I DS-VGS data for  IGZO-TFTs without and with n-HPA or FPA passivation for bias stress times of 0, 10, 100, 1,000, and 10,000 s. The arrows in the figure indicate the direction of turn on voltage shift (  VON) for increasing bias stress time. It was observed that as the duration of bias stress increased the  VON continued to shift.  However, we found that both sub-threshold slope and  avg remained unchanged after either positive or negative bias stress.

In Figure 3, we plot  VON versus bias stress time for the IGZO-TFTs. The experimental data in the figure is given as open and closed symbols, which represent positive and negative bias  stress  measurements,  respectively.  Devices  without  passivation  had  the  largest  bias  stress  VON, where the devices had shifts of 7.2 and -8.0 V after 10,000 s of positive and negative bias stress, respectively. For bias stress induced trapping and meta-stability, a stretched exponential model has been previously employed for amorphous silicon25 and IGZO-TFTs. 15,18,20,21

$$\Delta V _ { t h } = \Delta V _ { o } \left \{ 1 - \exp \left [ - \left ( \frac { t } { \tau } \right ) ^ { \beta } \right ] \right \}$$

The threshold voltage shift (  Vth) is related to the effective voltage drop across the gate oxide (  VO), which is approximately given by the difference between gate stress voltage and initial threshold  voltage  (VG,stress -Vth,i ),  the  characteristic  trapping  time  of  carriers  (  ),  and  stretched exponential  exponent  (  ).  Both  and  are  dependent  on  stress  bias,  materials,  and  device properties.  For  more  accuracy  we  used  VON  in  place  of  Vth,  where  VON  was  obtained  by extrapolation  from  log  IDS  versus  VGS  plots  where  log  (IDS/(W/L))  (A)  is  equal  to  -11.  The stretched exponential model for IGZO devices provided excellent fits to bias stress VON shifts for devices without passivation (dashed line through the circle data points in Figure 3). Values of  and  for  different  surface  treatments  are  summarized  in  Table  2,  and  were  consistent  with literature values. For example, characteristic trapping times for IGZO TFTs in the literature are between    ~10   to  10   s, 3 6 15,18,20,21 and  can  vary  substantially  depending  on  whether  measuring negative  or  positive  bias  stress,  the  gate  dielectric  used,  and  the  use  of  passivation  layers  to prevent  chemistry  induced  trapping  at  the  back  channel  interface.  The  stretched  exponential model is primarily used to describe VON shifts due to trapping at the dielectric interface or due to metastability  in  the  channel  material,  although  this  model  has  also  been  used  to  describe  VON

shifts  due  to  back  channel  chemical  effects  for  IGZO 20 and  zinc  tin  oxide  (ZTO) 26 TFTs.  In Figure 3 we show the bias stress results for an IGZO-TFT with n-HPA adsorbed on the surface (triangle data points).  There is a significant reduction in bias stress shift, especially for negative biases,  when  compared  to  devices  without  SAMs  on  the  back  channel  surface.    Similar improvements in positive bias stress stability have previously been shown for ZTO-TFTs when n-HPA is adsorbed on the backchannel surface. 26 In  Figure 3, we show that IGZO TFTs with FPA  SAM  had  the  lowest  positive  and  negative  bias  stress  shifts  (square  data  points).    The observed  shifts  for  FPA  passivated  surfaces  are  significantly  reduced  compared  to  the  other surface  preparations,  and  we  find  that  the  stretched  exponential  model  no  longer  provides  an adequate  fit  to  the  data.    However,  we  now  find  that  a linear  relationship  between  Vth and logarithmic  time  provides  a  good  fit  to  our  data  for  FPA  passivated  IGZO  TFTs.  This relationship  can  be  described  as  following  the  total  charge  that  becomes  trapped  at  the channel/dielectric interface or in the dielectric for any given time  . t 12 The positive and negative stress test showed a slope of 0.35 and -0.23, respectively.

Since  devices  with  and  without  SAM  passivation  had  identical  preparation  of  the dielectric/IGZO  interface  and  the  IGZO  post-deposition  annealing  conditions  we  are  able  to make several observations.    In  the  case  of  the  unpassivated  surface  the  bias  stress  VON  shifts were most likely due to chemistry at the back channel interface as opposed to trapping at the dielectric interface or due to metastability in the channel material.  Since the trends for the nHPA  passivated  IGZO  TFTs  are  very  similar  to  the  unpassivated  IGZO  TFTs  (both  fit  the stretched exponential model), it is likely that chemistry at the back channel interface still allow trap or donor states that lead to VON shifts during bias stress.  Finally, it appears that the FPA

passivated  IGZO TFT stabilities  switch  to  a  different  mechanism  (no  longer  fits  the  stretched exponential model), and in this case we believe that the device stability is no longer dictated by the back channel interface, but is now dominated by charge injection into the dielectric.

In  the  lower  portion  of  Figure  4  we  show  surface-sensitive  O  1s  XPS  data  for  an  as deposited blanket IGZO film using a photon energy of h  = 735 eV.  The sample was stored in ambient air for several days prior to analysis and had substantial carbon contamination (spectra not  shown).    To  fit  the  O  1s  core  level  spectrum  it  was  necessary  to  use  three  components, similar to what has been done previously for IGZO. 27-29 From our analysis we have determined that  the  binding  energies  for  the  three  components  were  at  530.1,  531.2,  and  532.2  eV.  For several prior IGZO XPS studies the three O 1s peak components were assigned as follows. 27,28 The low-energy peak corresponds to lattice oxygen ions, which have neighboring cations. The mid-energy O 1s peak corresponds to oxygen vacancies or more accurately, lattice oxygen ions in oxygen deficient regions of IGZO. The high-energy O 1s components were due to adsorbed species.

To assess these assignments we have performed in-situ annealing experiments with the goal  to  desorb  impurities  from  the  surface  and/or  increase  the  number  of  oxygen  vacancies within the film.  In the upper portion of Figure 4 we show surface-sensitive O 1s XPS data for the IGZO sample while annealing to 300 º  in ultrahigh vacuum.  During the anneal there was a C significant reduction in the intensities of the midand high-energy O  1s components (quantitatively  summarized  in  Table  3).    Since  the  annealing  was  performed  in  an  oxygen deficient environment the number of oxygen vacancies should increase, resulting in an increase in relative intensity for the mid-energy O 1s component based on the assignments given above.

However, we have found a significant decrease in intensity for both the mid- and high-energy O 1s components suggesting that both components are likely due to adsorbed species that desorb during the anneal.  Our interpretation of the O 1s components follows the convention that the mid-energy O 1s peak corresponds to surface hydroxyls, and not oxygen deficient regions in the material.  This interpretation of the O 1s spectra has been suggested by several other groups for IGZO  as well. 29-31 Thus, the mid- and high-energy peak intensity is correlated with the number of  adsorbed  species  on  the  IGZO  back  surface  and  the  corresponding  number  of  adsorbateinduced traps (i.e., not the number of oxygen vacancies in the IGZO film and the corresponding number of traps), and it is these adsorbed species that influence the bias stress stability of the devices fabricated using TAOS materials.  Based on the bias stress data this would suggest that the FPA passivated surface has significantly fewer absorbed species on the IGZO back channel surface,  which  is  consistent  with  the  significant  reduction  in  surface  energy  compared  to  the unpassivated and n-HPA passivated surfaces.

In the lower portion of Figure 5 we show O 1s XPS data for a blanket IGZO film after being annealed to 300 ° C for 60 min in air, while in the upper portion of Figure 5 we show O 1s XPS data of samples with n-HPA and FPA to investigate changes in IGZO-TFT back channel chemistry. As mentioned above, the low-energy peak corresponds to lattice oxygen ions in IGZO. The  n-HPA  and  FPA  SAMs  adsorbed  on  IGZO  the  mid-energy  O  1s  components  can  be attributed to P-O-In/P-O-Ga/P-O-Zn and P=O, which was consistent with prior studies. 32-34 The third peak at a higher binding energy of 532.3 eV can be assigned to surface contamination, as will be discussed below. The mid-energy peak intensity/low-energy peak intensity ratio (Ime/Ile) gives a qualitative estimate of the relative amount of SAMs adsorbed on the surface.  As can be

seen in Figure 5, and also given in Table 4, the Ime/Ile intensity ratios are 70% and 49% for nHPA  and  FPA,  respectively.  This  suggests  that  there  is  more  n-HPA  adsorbed  to  the  IGZO surface, which would be expected based on the relative sizes of the alkane and fluorinated alkane chains and the associated packing densities. 35

In the lower portion of Fig. 6, we show C 1s spectra for a blanket IGZO film after being annealed to 300 ° C . The C 1s spectra had three fairly well-separated peaks with the lower energy peak having an energy of 284.6 eV, which is assigned to aliphatic carbon (C-C or C-H bonds), and the two higher energy peaks at 286.2 eV and 288.8 eV can be assigned to C-O and O-C=O groups on the surface, respectively. 36,37 As shown in the middle portion of Fig. 6, IGZO sample with n-HPA has much less C-O and O-C=O groups on the surface, where most of the intensity comes from aliphatic carbon in HPA molecules, and two higher energy peaks at 286.4 and 288.5 eV due to -CH2- bonded to the phosphonic acid group and surface contamination, respectively. In the upper portion of Fig. 6, we can see that the C 1s spectrum for FPA has five components, where  the  -CF2and  -CF3  groups  in  FPA  molecules  give  peaks  at 290.8  eV  and  293.3  eV, respectively.  The  CH2- groups bound to  CF2- and  PO3 give peaks at 286.1 eV and 288.4 eV, ---respectively.

These results strongly suggest that the back channel surface chemistry was the dominant reason for bias-stress VON shifts for the unpassivated and n-HPA passivated IGZO-TFTs. There are several mechanisms that have been proposed to describe device instabilities due to the back channel surface chemistry, including field-induced adsorption/desorption 16 and dipole interactions. 5,19 A  significant  difference  between  n-HPA  and  FPA  is  the  orientation  of  the

molecular dipole at the surface. 34 For example, n-HPA has a polar head group attached to the surface and a non-polar alkyl chain pointing away from the surface.  FPA has a polar head group attached to  the  surface,  but  also  has  highly  electronegative  fluorine  atoms  on  the  alkyl  chains pointing away from the surface. This results in a molecular dipole that points towards and away from the surface, respectively.

Recent studies suggested that water adsorption was the dominant species for ZTO TFT instabilities  leading  to  significant  shifts  in  threshold  voltage, 38 and  increased  hysteresis  in  the TFT  transfer characteristics. 39 The  saturation coverage of SAMs  used  in  these studies significantly  limits  the  interaction  of  impurity  species,  especially  H 2 O, with the IGZO surface (i.e. it does not provide electron trap and/or donor states that would result in device instabilities). The FPA surface has a significantly lower surface energy compared to n-HPA, and as a result may further reduce the interaction of H2O with the IGZO back channel surface. This may help explain  why  the  IGZO-TFT  with  FPA  has  lower  VON  bias  stress  shifts,  and  lower  device hysteresis than the n-HPA passivated devices, or the unpassivated devices.  Finally, we have not observed significant differences in the IGZO TFT hysteresis for the different surface treatments, which suggests that SAMs do not degrade device performance.

In summary, highly stable IGZO TFTs were fabricated through molecular passivation of the  oxide  back  channel  surface.  Both  the  positive  and  negative  bias  stress  dependence  of  the turn-on voltage shifts for unpassivated IGZO-TFTs and n-HPA passivated IGZO-TFTs was best described by a stretched exponential model, whereas FPA passivated IGZO TFTs had a linear relationship  between turn-on  voltage  shifts and  logarithmic  time for  the  same  bias  stress

conditions.  Bias  stress  measurements  and  XPS  analysis  suggest  that  reductions  in  the  turn-on voltage shifts were due to well defined molecular passivation at the backchannel surface, which limits electrical modification of the channel due to the adsorption of impurity species (i.e., O2, H2O, etc.).

## Acknowledgements

This  work  was  funded  in  part  by  the  Oregon  Nanoscience  and  Microtechnologies Institute (ONAMI). X. Du acknowledges funding support from the Juvenile Diabetes Research Foundation (3-PDF-2014-113-A-N). The Advanced Light Source is supported by the Director, Office  of  Science,  Office  of  Basic  Energy  Sciences,  of  the  U.S.  Department  of  Energy  under Contract No. DE-AC02-05CH11231.

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Table  1. Average  mobility,  turn  on  voltage,  drain  current  on-to-off  ratio  and  hysteresis  for unstressed IGZO TFTs with/without n-HPA or FPA.

| Surface treatment   |    avg (cm 2 /Vs) |   V on (V) | I on /I off   |   Hysteresis (V) |
|---------------------|--------------------|------------|---------------|------------------|
| Annealed            |               20.2 |       -0.7 | 5.0× 10 6     |              0.6 |
| n-HPA               |               20.6 |       -1.4 | 3.0× 10 6     |              0.4 |
| FPA                 |               21.4 |       -2.1 | 4.0× 10 6     |              0.3 |

Table  2. Characteristic  trapping  time  of  carriers,  and  stretched  exponential exponent,  for IGZO TFTs.

| Stress test               |  (s)     |    |
|---------------------------|-----------|------|
| Annealed, positive stress | 1.0× 10 4 | 0.45 |
| Annealed, negative stress | 5.5× 10 3 | 0.74 |
| HPA, positive stress      | 2.1× 10 5 | 0.33 |
| HPA, negative stress      | 7.7× 10 6 | 0.22 |

Table  3. Surface-sensitive  XPS  binding  energies  and  peak  areas  obtained  from  blanket  IGZO films for as deposited and while annealing to 300 º  in ultrahigh vacuum. C

|              |   O 1s B.E. (eV) |   Area (%) |
|--------------|------------------|------------|
| As deposited |            530.1 |       53.4 |
| As deposited |            531.3 |       28.2 |
| As deposited |            532.2 |       18.4 |
|              |            530.1 |       88.7 |
|              |            531.3 |       11.3 |

Table 4. XPS binding energies and peak areas obtained from blanket IGZO films that have been annealed and treated with n-HPA or FPA.

|          | O 1s B.E. (eV)   | Area (%)   |   C 1s B.E. (eV) |   Area (%) |
|----------|------------------|------------|------------------|------------|
|          |                  |            |            284.6 |       46.1 |
|          | 530.1            | 61.9       |            286.1 |       11.8 |
| FPA      | 531.2            | 30.5       |            288.4 |        9.5 |
|          | 532.3            | 7.6        |            290.8 |       22.7 |
|          |                  |            |            293.3 |        9.9 |
|          | 530.1            | 53.3       |            284.6 |       90.6 |
| HPA      | 531.2            | 37.4       |            286.4 |        6.9 |
|          | 532.3            | 9.3        |            288.5 |        2.5 |
|          | 530.1            | 65.8       |            284.6 |       72.4 |
| Annealed | 531.2            | 23.8       |            286.2 |       10.1 |
|          | 532.3            | 10.4       |            288.8 |       17.5 |

FIG. 1. Schematic illustration of SAM functionalized IGZO TFT structure showing the mono-, bi-, and tri-dentate binding of SAM to IGZO.

FIG. 2. Plot of ID vs VGS for various treatments of the IGZO TFTs as a function of positive and negative biased stress time of 0, 10, 100, 1,000 and 10,000 s. (a) Annealed sample, positive bias, (b) annealed sample, negative bias, (c) Annealed sample with FPA, positive bias, (d) Annealed sample with FPA, negative bias, (e) Annealed sample with n-HPA, positive bias, (f) Annealed sample with n-HPA, negative bias.

FIG. 3.  VON shift vs positive and negative bias stress time (s) for IGZO TFTs with and without n-HPA and FPA. For annealed devices without SAMs and for a n-HPA passivated surface, a fit of the stretched exponential model (dashed lines) is shown. For devices with a FPA passivated surface, a linear fit (dashed lines) is shown.

FIG. 4. Surface sensitive O 1s XPS data obtained from blanket as deposited IGZO films and the same film during an in-situ anneal to 300 ° C.

FIG. 5. O 1s XPS data obtained from blanket IGZO films that have been annealed and treated with n-HPA or FPA.

FIG. 6. C 1s XPS data obtained from blanket IGZO films that have been annealed and treated with n-HPA or FPA.

Figure 1:

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0330v1-figure-584497ec-2ae2-44d3-839b-671d3ede965d.jpg)

Figure 2:

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0330v1-figure-8ea3486c-54ca-4820-bf09-ee2f54a47ea9.jpg)

Figure 3:

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0330v1-figure-11939489-b464-4c06-b51a-68df03b0b1dc.jpg)

Figure 4:

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0330v1-figure-19405cbb-9f0d-449b-be31-10733945ea11.jpg)

Figure 5:

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0330v1-figure-5c8c7647-6bb6-426d-b353-5f65057a603c.jpg)

Figure 6:

2

298 296 294 292 290 288 286 284 282 Binding Energy (eV)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0330v1-figure-cb94c03d-b84d-42f3-924e-c311aa729b3a.jpg)
Xiaosong Du Brendan T. Flynn Joshua R. Motley William F. Stickle Hendrik Bluhm Gregory S. Herman
Role of Self-Assembled Monolayers on Improved Electrical Stability of Amorphous In-Ga-Zn-O Thin-Film Transistors
Self-assembled monolayers (SAMs) have been used to improve both the positive
and negative bias-stress stability of amorphous indium gallium zinc oxide
(IGZO) bottom gate thin film transistors (TFTs). N-hexylphosphonic acid (HPA)
and fluorinated hexylphosphonic acid (FPA) SAMs adsorbed on IGZO back channel
surfaces were shown to significantly reduce bias stress turn-on voltage shifts
compared to IGZO back channel surfaces with no SAMs. FPA was found to have a
lower surface energy and lower packing density than HPA, as well as lower bias
stress turn-on voltage shifts. The improved stability of IGZO TFTs with SAMs
can be primarily attributed to a reduction in molecular adsorption of
contaminants on the IGZO back channel surface and minimal trapping states
present with phosphonic acid binding to the IGZO surface.