Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline  Co2FeAl  full-Heusler  alloy  magnetic  tunnel  junctions  on Si/SiO2 amorphous substrates

Zhenchao Wen, Hiroaki Sukegawa, Shinya Kasai, Koichiro Inomata, and Seiji Mitani National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan

## Abstract:

We studied polycrystalline B 2-type Co2FeAl (CFA) full-Heusler alloy based magnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate. Polycrystalline CFA films with a (001) orientation, a high B 2 ordering, and a flat surface were achieved using a MgO buffer layer. A tunnel magnetoresistance (TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure on a 7.5-nm-thick MgO buffer. Spin-transfer torque induced magnetization switching was achieved in the MTJs with a 2-nm-thick polycrystalline  CFA  film  as  a  switching  layer.  Using  a  thermal  activation  model,  the intrinsic critical current density ( J c0 ) was determined to be 8.2 ×  10  A/cm , which is lower 6 2 than  2.9  ×   10 7 A/cm ,  the  value  for  epitaxial  CFA-MTJs  [ 2 Appl.  Phys.  Lett. 100 ,  182403 (2012)].  We  found  that  the  Gilbert  damping  constant  (  )  evaluated  using  ferromagnetic resonance  measurements  for  the  polycrystalline  CFA  film  was ~ 0.015  and  was  almost independent of the CFA thickness (2~18 nm). The low J c0 for the polycrystalline MTJ was mainly attributed to the low  of  the CFA layer compared with the value in the epitaxial one (~0.04).

## I. INTRODUCTION

Half-metallic  ferromagnets  (HMFs)  draw  great  interest  because  of  the  perfect  spin polarization of conduction electrons at the Fermi level, which is considered to enhance the spin-dependent transport efficiency of high-performance spintronic devices. [1-3] Cobaltbased full-Heusler alloys with the chemical formula Co2 YZ (where Y is  a  transition metal and Z is a main group element), are extensively studied as a type of HMFs owing to their high Curie temperature of approximately 1000 K, high spin polarization, and low damping constant.  [4,  5]  They  exhibit  great  potential  for  applications  in  spintronics,  including current-perpendicular-to-plane  giant  magnetoresistance  (CPP-GMR)  read  heads,  [6,  7] magnetoresistive random access memories (MRAMs), [8] and spin transistors such as spinfunctional  metal-oxide-semiconductor  field-effect  transistors  (spin-MOSFETs).  [9,  10]  In particular,  magnetic  tunnel  junctions  (MTJs)  with  Co-based  full-Heusler  alloy  electrodes have been shown tremendously increasing tunnel magnetoresistance (TMR) ratios during the  last  decade  since  Inomata et al. [11]  demonstrated  a  TMR  ratio  of  16%  using Co2Cr0.6Fe0.4Al/AlOx/CoFe MTJs at room temperature (RT). [12-21] Recently, a remarkable TMR ratio of approximately 2000% at 4.2 K (354% at RT) was achieved using epitaxial  Co2MnSi/MgO/Co2MnSi(001)  MTJs,  demonstrating  the  half-metallicity  of  Cobased  Heusler  alloys  and  strong  1 coherent  tunneling  effect  in  the  MgO/Heusler  MTJs [21].

The Co2FeAl (CFA) alloy is of particular interest because of its high spin polarization (a half-metallic electronic structure) [22] and low effective damping constant (  ) ~ 0.001 [23], which  are  beneficial  for  enhancing  the  TMR  ratio  and  lowering  the  magnetization

switching  current  of  spin-transfer  torque  (STT).  CFA  films  prepared  using  sputtering deposition generally have a disordered B 2 structure (swapping between Y and Z sites) rather than  an  ordered L 21 structure owing  to  the  thermodynamic  stability  of  CFA  [24]. Nevertheless, the spin polarization calculated for the L 21 structure is conserved even for the B 2  structure  [25].  Importantly,  a  CFA  film  with  a  (001)  orientation  has  a  large  in-plane lattice  spacing  ( d (200) /  2  = d (110) =  0.203  nm)  compared  with  other  half-metallic  Heusler alloys  such  as  Co2FeAl0.5Si0.5 ( d (110) =  0.201  nm)  and  Co2MnSi ( d (110) =  0.198  nm). Therefore,  a  nearly  perfect  CFA/MgO(001)  heterostructure  is  easily  achieved  by  the magnetron sputtering method, and this is  favorable  for  enhancing  the  coherent  tunneling effect  [13,  18].  Recently,  TMR  ratios  as  high  as  360%  at  RT  (785%  at  10  K)  were demonstrated in epitaxial CFA-based MTJs with a sputter-deposited MgO barrier [17-19]. The large TMR ratio originated from the high spin polarization of the CFA layer and the strong contribution of the coherent tunneling effect through  1 Bloch states in the CFA and the  MgO  barrier.  Moreover,  (001)-textured  CFA  films  can  be  grown  on  MgO-buffered Si/SiO2 amorphous substrates, and a relatively large TMR ratio of 166% at RT (252% at 48 K) was achieved in a (001)-textured CFA/MgO/CoFe MTJ [20]. Such polycrystalline fullHeusler  MTJs  on  amorphous  substrates  are  desired  because  of  their  compatibility  with practical  industrial  applications  of  full-Heusler  spintronic  devices,  while  single-crystal MgO(001) substrates have a limited scope of application.

Furthermore, STT-induced magnetization switching (STT switching), a key technology for writing information in spintronics devices, was realized using MTJs with an epitaxial CFA ultrathin  (~1.5  nm)  layer  as  a  switching  (free)  layer  [26].  However,  a  large  critical

switching current density ( J c0 ) of 2.9 ×  10  A/cm  was observed owing to the enhancement 7 2 of  ,  which  was  ~0.04,  of  the  epitaxial  CFA  film.  In  addition,  STT  switching  can  be disturbed  by  the  stabilization  of  intermediate  magnetic  states  possibly  because  of  the presence  of  in-plane  magnetocrystalline  anisotropy,  which  is  generally  seen  in  epitaxial magnetic films (e.g., 4-fold anisotropy for cubic (001) films) [27]. Therefore, reducing the undesirable magnetic anisotropy using polycrystalline  Heusler alloy films is effective for highly efficient STT switching.

In this work, we systematically studied MTJs with (001)-textured polycrystalline CFA films  on  Si/SiO2  amorphous  substrates.  A  MgO  buffer  was  introduced  in  the  MTJs  for achieving  (001)  texture  with B 2-ordering  structure  of  CFA  layers  on  the  amorphous substrates. The (001)-texture, B 2 order, and surface morphology of the polycrystalline CFA films  and  the  TMR  effect  in  the  entire  MTJ  stacks  were  characterized  for  varying  MgO buffer thickness. Also, the MgO-barrier  thickness  and  resistance-area  product ( RA ) dependence  of  the  TMR  ratios  were  investigated  for  the  polycrystalline  CFA-MTJs. Furthermore,  STT  switching  was  examined  in  lowRA MTJs  with  a  thin  polycrystalline CFA film (2.0 nm) as a free layer. J c0 of 8.2 ×  10  A/cm  was demonstrated by a thermal 6 2 activation model for switching current; this is far lower than the value for epitaxial CFAMTJs [26]. The  values for the polycrystalline CFA films, obtained using a waveguidebased  ferromagnetic  resonance  method,  were  almost  constant  against  the  CFA  thickness, and a relatively low  of ~0.015 was demonstrated. We attributed the reduction in the J c0 of the STT switching to the reduced  of the polycrystalline CFA films.

## II. EXPERIMENT

All  multilayer  stacks  were  deposited  on  thermally  oxidized  Si/SiO2  amorphous substrates  at  RT  using  an  ultra-high  vacuum  magnetron  sputtering  system  with  a  base pressure lower than 4  10 -7 Pa. MgO layers were deposited from a sintered MgO target by RF sputtering with an RF power density of 2.19 W/cm  and an Ar pressure of 10 mTorr. 2 CFA layers were deposited from a stoichiometric Co50Fe25Al25 (at.%) alloy target using DC power.  The  structural  properties  and  surface  morphology  of  CFA  films  on  MgO  buffers were  characterized  by  out-of-plane  (2 θ ω -scan)  X-ray  diffraction  (XRD)  with  Cu Kα radiation (λ = 0.15418 nm) and atomic force microscopy (AFM), respectively. MTJ stacks with  the  structure  of  CFA/MgO/Co75Fe25/IrMn/Ru  (unit:  nm)  were  deposited  on  MgObuffered thermally oxidized Si/SiO2 amorphous substrates and patterned into junctions with active area of 5  10  m 2 by  conventional lithography methods with Ar ion milling. For STT switching,  spin-valve  MTJs  with  the  structure  of  MgO  (7.5)/Cr  (40)/CFA  (2)/MgO (0.6-0.8)/Co75Fe25 (5)/Ru  (0.8)/Co75Fe25 (5)/IrMn  (15)/Ta  (5)/Ru  (10)  (unit:  nm)  were prepared on the amorphous substrates and nanofabricated into 100-nm-scaled ellipses. The actual areas of the MTJ nano-pillars were obtained according to the ratio of the RA to the junction resistance; the RA was  characterized  by current-in-plane tunneling (CIPT) measurement  [28]  before  patterning.  The  MTJ  stacks  were  post-annealed  in  a  vacuum furnace for 30 minutes under a magnetic field of 5 kOe. The magneto-transport properties were measured using a DC 2- or 4- probe method. The magnetic damping constant  of the polycrystalline  CFA  film  was  measured  by  waveguide-based  ferromagnetic  resonance

(FMR). The films were patterned into rectangular shape elements of 600 ×  20 μm  using 2 UV lithography together with Ar ion milling, and then coplanar waveguides made of Au were fabricated on them. The FMR signal obtained as change of the real part of S21 signal, was determined using a network analyzer. An external magnetic field along the longitudinal axis  was  varied  from  0  to  1.9  kOe,  while  the  excitation  power  was  fixed  as  0  dBm.  All measurements were performed at RT.

## III. RESULTS

## A. Effect of MgO buffer on polycrystalline CFA films and TMR

Before  MTJ  multilayer  films  were  grown,  MgO  buffer  was  deposited  on  a  Si/SiO2 amorphous substrate in order to establish the (001)-texture of polycrystalline CFA films by taking  advantage  of  the  unique  (001)-texture  property  of  MgO  layers  on  an  amorphous substrate. CFA films were subsequently grown on the MgO buffer layer, and the structural properties of the CFA films depending on the MgO buffer thickness were investigated by XRD. The out-of-plane XRD patterns of 30-nm-thick CFA films are shown in Fig. 1(a); the CFA films were annealed at T a = 400 ° C, and the thicknesses of the MgO buffers ( t MgO) are 2.5, 5.0, 7.5, and 10.0 nm. In addition to the peaks (denoted by 's') from Si/SiO2 substrates, MgO(002),  CFA(002),  and  (004)  peaks  were  observed  along  with  the  absence  of  other oriented peaks, demonstrating the (001)-texture established in the stacks. Figure 1(b) shows the t MgO dependence of the integrated intensity of CFA(002) peaks for as-deposited CFA films, and CFA films annealed at 400 ° C and 480 ° C. With increasing t MgO, the intensity of the  peaks  initially  increases  for  all  samples  owing  to  the  improved  (001)-texture  of  the MgO buffer layer, reaching a maximum at t MgO = 7.5 nm. The reduction in intensity at t MgO

= 10 nm may be caused by the degraded surface morphology of the MgO buffer layer. In addition,  the  XRD  intensity  increases  with  increasing  annealing  temperature,  which indicates  that  the  increasing  temperature  improves  the B 2  order  and  (001)-texture  of  the CFA  films.  In  the  XRD  2 θ ω -scan  with  the  diffraction  vector  along  CFA[111],  (111) reflection was not detected, indicating that the CFA films have a B 2-ordering structure with swapping between Fe and Al atoms while Co atoms occupy the regular sites. The degree of B 2 ordering was estimated according to the ratio of the integrated intensity of the CFA(002) and (004) peaks. The peaks were fitted by Voigt profiles, and the ratio of their integrated intensities,  i.e.,  the  ratio  of I (002)  to I (004),  is  shown  in  Fig.  1(c).  The  maximum I (002)/ (004) value was obtained at I t MgO = 7.5 nm for all of the samples: as-deposited and annealed at 400 ° C or 480 ° C. This value is comparatively large for CFA films annealed at 480 ° C, indicating the improvement of the B 2 ordering and the mosaicity of the CFA films due  to  annealing  at  high  temperature.  The  degree  of B 2  ordering, SB 2 ,  can  be  evaluated using the ratios according to the following equation: [29]

$$S _ { B 2 } \, = \, \int _ { \real } \frac { \lfloor \iota ( 0 0 2 ) / \iota ( 0 0 4 ) \rfloor e x p. } { \iota \iota ( 0 0 0 2 \, \diagdown / \iota ( 0 0 4 \, \diagdown \iota \,. } },$$

where [ (002)/ (004)]exp. is the ratio of the integrated intensity of the (002) peak to that of I I the (004) peak as determined by experiments, and [ (002)/ (004)]cal. is the ideal ratio of the I I two peaks. For t MgO = 7.5 nm, the ordering parameter SB 2 is calculated to be 0.89, 0.95, and 0.98 for CFA films as deposited, annealed at 400 ° C, and 480 ° C, respectively. The results demonstrate  a  high B 2  order  and  an  excellent  (001)-texture  were  established  in  the polycrystalline CFA films on MgO-buffered Si/SiO2 amorphous substrates.

For stacking MTJ multilayers with the polycrystalline CFA films, the t MgO dependence of the surface morphology of the CFA films was investigated. Figure 2 shows the average surface roughness ( Ra ) and peak-to-valley ( P V -) value as a function of t MgO for 30-nm-thick CFA  films  annealed  at  400  ° C  and  480  ° C,  respectively.  For  the  samples  annealed  at 400 ° C, flat surfaces with Ra ~ 0.1 nm and P V -ranging from 1.3 to 1.5 nm were observed for all values of t MgO. The inset of Fig. 2 shows an example of AFM images of the samples (annealed at 400 ° C on a 7.5-nm-thick MgO buffer). The results indicate the feasibility of stacking MTJs with a thin MgO barrier. In addition, the samples annealed at 480 ° C with higher Ra and P V -values were observed as well as a large t MgO dependence.

The whole MTJ stacks with the structure of MgO ( t MgO)/CFA (30)/MgO ( barr)/Co75Fe25 t (5)/IrMn (15)/Ru (10) (unit: nm) were then fabricated on Si/SiO2 substrates with varying MgO buffer thickness t MgO (2.5  10.0 nm) and MgO barrier thickness t barr (1.5, 1.8, and 2.0 nm).  The  stacks  were  annealed  at  370  ° C  in  the  presence  of  a  magnetic  field  of  5  kOe. Figure  3  shows  TMR  ratios  as  a  function  of t MgO  for  the  polycrystalline  CFA-MTJs measured  at  RT  using  CIPT.  The  30-nm-thick  CFA  films  were  post-annealed  at T a = 400 ° C and 480 ° C in order to improve the B 2 ordering. The TMR ratios obtained in MTJs with T a = 400 ° C were higher than those of MTJs with T a = 480 ° C, which can be attributed to  a  better  CFA/MgO-barrier  interface  due  to  the  flat  CFA  surface  annealed  at  400  ° , C although a higher degree of B 2 ordering was observed for T a = 480 ° C, as shown in Figs. 1 and 2. With increasing t MgO, the TMR ratio increases and is nearly saturated at t MgO &gt; 5 nm, indicating  that  high-quality  CFA  films  with B 2  order  and  (001)-texture  were  established with  the  more  than  5-nm-thick  MgO  buffer  layer,  which  is  consistent  with  the  XRD

analyses. A slight reduction in the TMR ratio was observed at t MgO = 10 nm, which could be caused by the reduction in the degree of (001)-orientation of the MgO buffer. The MTJs with a 1.8-nm-thick MgO barrier exhibit larger TMR ratios than those with 1.5- and 2.0nm-thick MgO barriers, which could be due to the plastic relaxation of the MgO barrier [30] and/or the oscillatory behavior of the TMR ratio as a function of MgO thickness [18].

## B. MgO barrier thickness and RA dependences of TMR

In order to realize STT switching in the polycrystalline CFA-MTJs, it is expected that introduction of a conductive underlayer, reduction in the free-layer thickness, and control of the RA of the barrier layer are required. The MgO barrier thickness and RA dependences of the TMR ratio were investigated using spin-valve MTJs with the structure of MgO buffer (7.5)/Cr (40)/CFA (30)/MgO ( t barr : 1.2-2.0)/Co75Fe25 (5)/IrMn (15)/Ta (5)/Ru (10) (unit: nm) on a Si/SiO2 substrate. A Cr underlayer was selected as the conductive electrode because Cr has a very small lattice mismatch with CFA (~0.6%) and can further facilitate the ordering structure of full-Heusler alloys [13]. The Cr layers for the samples as deposited, annealed at 400 ° C, and 600 ° C were prepared on the 7.5-nm-thick MgO buffer for the MTJ stacks. The entire stacks were annealed at 370 ° C in the presence of a magnetic field of 5000 Oe, and then their TMR ratios and RA values were characterized using CIPT measurement.

Figure 4(a) shows the dependence of the TMR ratios on the nominal thickness of the MgO barrier ( t barr ) for the MTJs with different Cr annealing conditions. For the samples that were  as-deposited  and  annealed  at  400  ° C,  the  TMR  ratio  increases  with t barr ,  and  TMR ratios  greater  than  100%  were  achieved  for  the  whole  range  of t barr .  This  means  that  the

(001)-texture and B 2 ordering of CFA films can be maintained on the MgO/Cr buffer layers. We obtained the largest TMR ratio of 175% for the 400 ° C annealed sample with t barr = 1.95 nm; this TMR ratio is higher than 166%, which was observed in the MTJ without the Cr buffer, which indicates that the Cr buffer with optimal conditions promotes CFA(001) growth  and  improves  the  effective  tunneling  spin  polarization.  On  the  other  hand,  the samples annealed at a high temperature (600 ° C) exhibited smaller TMR ratios (80-120%). This was attributed to the rough surface ( Ra = 0.4 nm and P V -= 3.2 nm) of the CFA film on the Cr layer annealed at 600 ° C, which can lead to a declined crystalline orientation of the MgO(001) barrier. Furthermore, oscillation behavior of the TMR ratios as a function of t barr was  observed  for  all  of  the  structures.  The  TMR  oscillation  behavior  is  typically observed  in  epitaxial  MTJs  such  as  Fe/MgO/Fe  [31],  Co2MnSi/MgO/Co2MnSi  [32], Co2Cr0.6Fe0.4Al/MgO/Co2Cr0.6Fe0.4Al  [33],  and  CFA/MgO/CoFe  [18]  MTJs,  while  it  is absent in polycrystalline MTJs such as CoFeB/MgO/CoFeB [34] MTJs. More remarkable oscillation  amplitude  in  epitaxial  full-Heusler  alloy-based  MTJs  than  that  of  epitaxial Fe/MgO/Fe MTJs was observed, which may be related to the electronic structures of fullHeusler alloy electrodes and the full-Heusler/MgO interface; however, the origin has not been understood yet. The unexpected oscillation behavior in the polycrystalline CFA-MTJs may  be  also  attributed  to  the  unique  electronic  structure  of  CFA  and  the  interface.  In addition, the flat buffer layer with a good crystallinity enabled us to achieve a well-defined layer-by-layer growth for the CFA layer and the MgO barrier, which may be advantageous for observing the oscillatory behavior. The oscillation period was approximately 0.2 nm in nominal thickness, which seems to be shorter than that for the epitaxial CFA/MgO/CoFe

(0.32  nm,  short-period)  [18].  Further  investigation  is  needed  to  clarify  the  origin  of  the behavior.

The RA as a function of the MgO barrier thickness is plotted in Fig. 4(b). We observed a typical behavior of an exponential increase with increasing t barr . According to the WenzelKramer-Brillouin  (WKB)  approximation,  the  relationship  between RA and t barr can  be expressed as follows:

$$\colon e x p ( \frac { 4 \pi \sqrt { 2 m \phi } } { h } \ t _ { b a r r } ),$$

where h , m ,  and ϕ are  Planck's  constant,  the  effective  electron  mass  assumed  as  a  free electron  mass  (9.11  ×   10 -31 kg)  here,  and  the  barrier  height  energy  of  the  tunnel  barrier, respectively [31]. A similar barrier height of 0.7 eV was obtained for all three samples by the fitting of RA t -barr curves. This value is greater than the reported values for Fe/MgO/Fe grown using molecular-beam-epitaxy (MBE) (0.39 eV) [31], sputtered CoFeB/MgO/CoFeB (0.29-0.39 eV) [35-37], and CoFeB/MgO (electron-beam evaporated)/CoFeB (0.48 eV) [38] MTJs. The reasons may be due to the different densities of  oxygen  vacancy  defects  in  the  MgO  barriers  and/or  the  deviation  of  the  actual  MgO thickness from the nominal one.

Figure 5 shows TMR ratios in a lowRA regime for the polycrystalline CFA-MTJs with 2-nm-thick CFA film as a free layer. The MTJs were annealed at 225 ° C for 30 minutes in order to reduce the influence of Cr layer to CFA. A TMR ratio of 40-60% was achieved with an RA of  7-20   m 2 (nominal MgO thickness: 0.6-0.8 nm) for the 100-nm-scaled

elliptical MTJs with the thin CFA layer, which is favorable for achieving STT switching in the MTJ stacks with a thin CFA free layer and the low RA value. In addition, the TMR ratio of the polycrystalline MTJs with 2-nm-thick CFA film is comparable to that with a thick (30 nm) CFA film at a low RA value, as shown in Fig. 5, which indicates that the (001)texture and B 2 ordering can be maintained in the thin 2-nm-thick CFA films.

## C. STT-induced magnetization switching

STT-induced  magnetization  switching  was  performed  in  spin-valve  MTJs  with  the structure  of  Si/SiO2-substrate/MgO (7.5)/Cr (40)/CFA (2)/MgO (0.6-0.8)/Co75Fe25 (5)/Ru (0.8)/Co75Fe25 (5)/IrMn (15)/Ta (5)/Ru (10) (unit: nm). A schematic of the structure of a polycrystalline CFA-MTJ nanopillar is shown in Fig. 6(a). The synthetic antiferromagnetic coupling  exchange  bias  of  CoFe/Ru/CoFe/IrMn  was  employed  to  reduce  the  offset magnetic field of hysteresis loops. Figure 6(b) indicates the tunneling resistance of an MTJ nanopillar as a function of the applied magnetic field ( H ) measured with a DC bias voltage of 1 mV. A TMR ratio of 43% was observed in the MTJ with a thin CFA free layer (2.0 nm) and  MgO  barrier  (0.75  nm).  Sharp  switching  between  parallel  (P)  and  antiparallel  (AP) magnetic  configurations  was  observed.  The RA of  the  MTJ  was  determined  using  CIPT measurements to be 13  m 2 , and the active area of the MTJ nanopillar was calculated to be 1.24 ×  10 -2  m 2 .  The hysteresis offset field ( H offset ) and the coercivity field ( H c )  were determined using the R-H loops to be -11 and 26 Oe, respectively. Figure 6(c) shows the representative resistance-current ( R-I ) loops of the CFA-MTJ nanopillar measured by a DC current with a sweep rate of 1.2 ×  10  4 A/s at different magnetic fields of 0, -11 and -20

Oe,  respectively.  The  positive  current  indicates  that  electrons  flow  from  the  bottom electrode  to  the  top  electrode.  Magnetic  switching  between  P  (low-resistance)  and  AP (high-resistance) states was achieved owing to the current. When current was applied in the negative  (positive)  direction,  the  P  (AP)  state  can  be  obtained  from  AP  (P)  state, corresponding to magnetization reversal of the CFA free layer. Also, the critical switching currents ( I c ) in both directions shift in the negative direction with the decrease of magnetic field from  0  to -20  Oe.  These  results indicate typical behaviors of STT-induced magnetization switching.

Since the STT switching by the DC current is a thermally activated process [39-41], we  use  a  thermal  activation  model  for  switching  currents  deduced  from R I -   loops  to evaluate the intrinsic critical switching current density ( J c0 ) and thermal stability factor  0 (= K V k T u / B ) for the MTJ, where K u is the uniaxial magnetic anisotropy, V is the volume of the  free  layer, k B  is  the  Boltzmann  constant,  and T is  the  absolute  temperature.  In  the thermal activation model, the sweep current  ( ) is assumed to increase linearly with time  , I t t i.e., I t ( )  = vt ,  and  the  cumulative  probability  distribution  function P t ( )  of  the  switching current in H offset can be expressed as

$$P \left ( t \right ) = \ 1 - \exp \left ( - \frac { f _ { 0 } l _ { c 0 } } { v _ { \Delta _ { 0 } } } \left \{ \exp \left [ - \Delta _ { 0 } \left ( 1 - \frac { v t } { l _ { c 0 } } \right ) \right ] - \exp [ - \Delta _ { 0 } ] \right \} \right ), \quad ( 3 )$$

where f 0 is the effective attempt frequency (=10 9 Hz), I c0 is the intrinsic switching current, and v is a constant sweep rate of the sweep current in the measurement of R I -  loops [41]. The  distribution  of  the  critical switching  current I c was  obtained  by  repeating  the measurement of the R I -loops for 300 times. Figure 6(d) shows typical R I -loops at H offset =

-11  Oe  for  the  polycrystalline  CFA-MTJ  nanopillar.  The  mean  critical  currents  in  the positive ( I c,P  AP) and negative  ( I c,AP  P)  directions  are  determined to be  530 and 400 μA, corresponding  to  the  critical  current  density  of  4.3  ×   10   ( 6 J c,P  AP)  and  3.2  ×   10 6 A/cm 2 ( J c,AP  P), respectively. Figures 6 (e) and (f) show the switching probability for I c,P  AP and I c, AP  P as a function of the sweep current. Using the constant sweep rate v = 1.2 ×  10 -4 A/s in  the  measurement  of R I -   loops,  the  switching  probability  was  fitted  using  Eq.  (3),  as shown by the solid lines. As a result, the intrinsic current density of J c0,P  AP ( J c0,AP  P) = 9.1 × 10  A/cm  (7.3 ×  10  A/cm ) and thermal stability of 6 2 6 2  0,P  AP (  0,AP  P) = 30.0 (28.4) were achieved for the polycrystalline CFA-MTJ nanopillar.

## D. Gilbert damping of the polycrystalline CFA film

The Gilbert damping parameter,  ,  is  a  critical  parameter  for  determining  the  critical current density of STT switching. In order to examine  for the polycrystalline CFA film, waveguide-based FMR was performed in a single ferromagnetic layered sample, consisting of SiO2-substrate//MgO(7.5 nm)/Cr(40 nm)/CFA(2-18 nm) structure. Typical FMR spectra with varied external magnetic fields ( H ext ) for a sample of 18-nm-thick CFA are shown in the inset of Fig. 7(a). A clear shift in the resonant frequency can be seen as H ext increases from 500 to 1500 Oe. The peak intensity is relatively small at low magnetic field, possibly because of the anisotropy distribution inside the film.

Figures  7(a)  and  (b)  show  the H ext dependence  of  the  resonant  frequency  ( f 0 ), demagnetization field ( H d ), and magnetic damping parameter (  H), respectively, estimated by fitting each spectrum using an analytical solution [42]. Here, we  assume  the

gyromagnetic  ratio  (  ) as  2  ×  0.00297  GHz/Oe  and  neglect  the  in-plane  magnetic anisotropic field. Both H d and  H exhibit a weak dependence on H ext possibly due to the anisotropy distribution, which becomes saturated at a high magnetic field range. The f 0 was fitted using the simplified Kittel formula:

$$f _ { 0 } = \frac { \gamma } { 2 \pi } \sqrt { H _ { e x t } ( H _ { e x t } + H _ { d } ) } \quad \quad ( 4 )$$

Then, we obtained H d = 12154 ±  17.9 Oe, which agrees well with the values obtained in the individual resonant spectrum for H ext &gt; 300 Oe. The magnetic field dependence of  can be excluded by the fitting equation,

$$\alpha _ { H } = \alpha + k \exp \left ( - H _ { e x t } / H _ { 0 } \right ), \text{ \quad \ } ( 5 )$$

where k and H 0 are  fitting  parameters, and  is  estimated to be 0.0148 ±  0.0003. Figure 7(c)  summarizes  CFA  thickness  dependence  of  the  saturation  magnetization, M s , and Gilbert damping constant,  , of polycrystalline CFA films. The weak thickness dependence of M s and  indicates that the CFA film guarantees a good quality even in a thin thickness regime at around 2 nm.

## IV. DISCUSSION

Using  polycrystalline CFA  full-Heusler  thin films, MTJs  with  the  structure of CFA/MgO/Co75Fe25  were  successfully  fabricated  on  a  SiO2  amorphous  substrate.  The effects of the MgO buffer on the structural properties of the polycrystalline CFA films and the  TMR in the MTJs were investigated. Optimized (001)-texture, B 2  order,  and  surface

morphology  of  the  CFA  films  was  demonstrated  on  a  7.5-nm-thick  MgO  buffer,  which contributes a large TMR ratio in the whole polycrystalline MTJ stacks. In order to achieve STT switching,  Cr  underlayers  were  utilized  as  a  conductive  electrode  on  the  optimized MgO buffer. The Cr layer was known to have very small lattice mismatch (~0.6%) with CFA and facilitate the ordering structure of full-Heusler alloys. A TMR ratio of 175% was achieved  in  the  polycrystalline  CFA-MTJs  on  MgO/Cr-buffered  Si/SiO2  substrate.  The buffer layer dependence of the structural properties of polycrystalline CFA films and  the TMR ratios in entire MTJ stacks are significant for practical spintronic applications of fullHeusler alloy materials. A proper buffer layer with minimal diffusion, and enhanced (001)texture and ordering parameter of polycrystalline full-Heusler alloys is required for further increasing the TMR ratios of the MTJs.

STT switching was performed in the CFA-MTJs with polycrystalline CFA as a free layer. The average intrinsic current density J c0 = ( J c0,P  AP + J c0,AP  P)/2 = 8.2 ×  10  A/cm 6 2 for the polycrystalline CFA-MTJ is generally comparable to that reported for CoFeB-MTJs with in-plane magnetization [43, 44]; however, it is much lower than the value of 2.9 ×  10 7 A/cm 2 for epitaxial CFA-MTJs [26]. Based on Slonczewski's model of STT switching [45, 46], the simplified J c0 , ignoring external magnetic fields, is given by,

$$\L e f f, \quad \ \ \ ( 6 )$$

where e is  the  electron  charge, is  reduced  Planck's  constant, M s is  the  saturation magnetization,   is the thickness of the free layer, t is the spin-transfer efficiency, and Heff the effective field acting on the free layer, including the magnetocrystalline anisotropy field,

demagnetization field, stray field. The polycrystalline CFA free layer (  = 2.0 nm) is thicker t than the epitaxial one (  = 1.5 nm). A similar t M s (~1000 emu/cm ) at RT was observed for 3 both  polycrystalline  and  epitaxial  CFA  films.  The of  the  polycrystalline  CFA-MTJs should  be  smaller  than  that  of  the  epitaxial  CFA-MTJs  because  the  TMR  ratio  of  the polycrystalline CFA-MTJs (43%) is lower than that of the epitaxial CFA-MTJs (60%) [26]. Accordingly, the low J c0 in the polycrystalline CFA-MTJs can be mainly attributed to the small  of the polycrystalline CFA free layer (~0.015) compared with that of the epitaxial CFA films (~0.04) [26]. For the polycrystalline CFA-MTJs, annealing was performed with a low temperature of 225 ° C and a short time of 30 minutes, whereas the epitaxial CFAMTJs were annealed at 360 ° C for 1 hour; this could be a factor in the reduction in  [47]. As  a  result,  a  lower J c0 was  obtained  in  the  polycrystalline  CFA-MTJs  than  that  in  the epitaxial  ones.  However,  the  value is  still  greater  than  that  reported  for  a  50-nm-thick CFA film on a MgO layer annealed at 600  C (~0.001) [23]; this may be attributed to the inter-diffusion of Cr atoms into the CFA layer and the residual magnetic moments on the Cr  surface.  Consequently,  a  proper  buffer  material  is  strongly  required  for  CFA  fullHeusler MTJs in order to reduce the  of the free layer and thus the J c0 of STT switching. Another factor for reducing J c0 is the magnetic anisotropy of the free layer. In perpendicular anisotropy CoFeB/MgO/CoFeB tunnel junctions, a low current density for STT switching was  demonstrated  owing  to  the  perpendicular  magnetic  anisotropy  (PMA)  [48-53].  To evaluate the contribution of interface PMA,  magnetization measurements  at in-plane  and out-of-plane  of  the  polycrystalline  CFA  film  was  performed.  An  effective  anisotropy energy  density  ( K eff )  of  -5  ×   10   erg/cm   was  obtained  for  a  2-nm-thick  CFA/MgO 6 3

structure where the negative K eff indicates the CFA layer is in-plane magnetized. In general, K eff can  be  simply  expressed by the equation of K eff = K v + K t i / ,  where K v is  the  volume anisotropy energy density which can be treated as demagnetization energy density (2π M s 2 ) for  simplicity, K i is  the  interface  anisotropy  energy  density,  and t is  the  thickness  of  the CFA layer. As a result, the value of K i can be calculated to be 0.25 erg/cm , indicating that 2 an  interface  PMA  is  induced  at  the  CFA/MgO  interface.  In  the  CFA/MgO-MTJs,  the interface PMA can cause a reduced effective anisotropy, and may also play a role for the reduction  in J c0 . For  further decreasing J c0 , a chosen  buffer  material, out-of-plane magnetization of the CFA free layer [54-56], and/or advanced fabricating techniques for high-quality CFA-MTJs are required.

## V. CONCLUSION

In conclusion, TMR ratios and STT-induced magnetization switching were studied in (001)-textured polycrystalline CFA  full-Heusler based MTJs  on  Si/SiO2  amorphous substrates. CFA films with a good (001)-texture and high B 2 order were achieved on MgObuffered Si/SiO2 amorphous substrates. The MgO barrier thickness and RA dependences of the  TMR  ratio  in  the  polycrystalline  CFA-MTJs  were  also  studied.  Moreover,  STT switching was achieved in the MTJs with a thin polycrystalline CFA film (2.0 nm) as a free layer. The J c0 of 8.2 ×  10  A/cm  was demonstrated for the polycrystalline CFA-MTJs with 6 2 in-plane  magnetization  using  a  thermal  activation  model  for  a  cumulative  switching probability distribution with a sweep current. The J c0 is much lower than that reported for epitaxial  CFA-MTJs,  which  is  mainly  attributed  to  the  reduced  of  the  polycrystalline CFA free layer.

## ACKNOWLEDGMENTS

This work was partly supported by the Japan Science and Technology Agency, CREST, and JSPS KAKENHI Grant Number 23246006.

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## Figures and captions:

FIG.  1.  (Color  online)  (a)  Out-of-plane  (2 θ-ω scan)  XRD  patterns  for  polycrystalline  CFA  fullHeusler  alloy  films  on  MgO-buffered  Si/SiO2  amorphous  substrates  with  varied  MgO  buffer thickness, t MgO: 2.5, 5.0, 7.5, and 10.0 nm. (b) Normalized integrated intensity of CFA(002) peak, and (c) Ratios of (002) to (004) peaks as a function of t MgO for as-deposited (as-dep.) samples and those annealed at 400 ° C and 480 ° C.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0341v1-figure-17b1d48f-eae4-4801-b138-a35a1590f161.jpg)

FIG.  2.  (Color  online)  Surface  morphology  of  polycrystalline  CFA  full-Heusler  alloy  films  on MgO-buffered Si/SiO2 amorphous substrates with respect to the thickness of the MgO buffer. The CFA films were 30-nm-thick and were deposited at RT and post-annealed at 400 ° C and 480 ° C, respectively. Inset: AFM image of the surface of the CFA film annealed at 400 ° C.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0341v1-figure-8948c669-d8bd-45c6-b040-83de3bc62e5d.jpg)

FIG. 3. (Color online) TMR ratios as a function of MgO buffer thickness t MgO for polycrystalline CFA/MgO/CoFe MTJs with different thicknesses of the MgO barrier, t barr : 1.5 nm, 1.8 nm, and 2.0 nm. The 30-nm-thick CFA bottom electrodes were directly deposited on the MgO buffer layer and

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0341v1-figure-ac70a19e-af4f-4bd0-8696-49b24466db21.jpg)

post-annealed at 400° C and 480° C after deposition at RT. The MTJ stacks were annealed at 370 ° C before the CIPT measurement.

FIG. 4. (Color online) The thickness of MgO barrier, t barr , dependence of (a) TMR ratios and (b) RA at  RT for polycrystalline CFA/MgO/CoFe MTJs with as-deposited, 400 ° C and 600 ° C annealed MgO(7.5  nm)/Cr(40  nm)  buffer  layers  on  SiO2  amorphous  substrates,  characterized  using  CIPT measurement.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0341v1-figure-01a38c22-e229-46d8-bdab-f13dc83a8d2d.jpg)

FIG. 5. (Color online) RA dependence of TMR ratios for polycrystalline CFA-MTJs with a 2-nmthick CFA layer ('thin-CFA') as a bottom electrode. The squared symbol indicates the TMR ratio for a polycrystalline CFA-MTJ with a 30-nm-thick CFA layer ('thick-CFA').

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0341v1-figure-d5d4c12d-9e97-4e3b-a87c-e8f2fa935d10.jpg)

0.0

FIG. 6. (a) Schematic illustration of the structure of polycrystalline CFA-MTJ nanopillar. (b) R H -loops for a polycrystalline CFA-MTJ nanopillar. Wide arrows show the magnetic configurations of bottom (free) and top (reference) electrodes of the MTJ, and narrow arrows indicate sweep direction of the applied magnetic field. (c) R-I loops for the MTJ at magnetic fields of 0, -11 and -20 Oe, respectively. Arrows indicate sweep direction of the applied current. (d) Representative R I -  loops of the CFA-MTJ at applied magnetic field of -11 Oe. (e) and (f) Switching probabilities for I c,P-&gt;AP and

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0341v1-figure-823fef65-bf6d-4651-863f-83f4f2702d0a.jpg)

I c,AP-&gt;P obtained by repeating R I -  measurements for 300 times. Solid lines are fitting curves given by Eq. (3). All measurements were performed at RT.

FIG.  7.  The H ext dependence  of  (a)  resonant  frequency f 0 , (b)  demagnetization  field H d , and magnetic damping parameter  H estimated by fitting the FMR spectrum at each magnetic field for a sample of a 18-nm-thick polycrystalline CFA film. Inset of (a) is typical FMR spectra at H ext of 500,  1000,  and  1500  Oe.  (c)  CFA  thickness t dependence  of  saturation  magnetization M s and damping constant  0 of the polycrystalline CFA film.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0341v1-figure-835ce8e5-f43b-4688-aebb-ff2b3523a82b.jpg)
Zhenchao Wen Hiroaki Sukegawa Shinya Kasai Koichiro Inomata Seiji Mitani
Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates
We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy based
magnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate.
Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and a
flat surface were achieved using a MgO buffer layer. A tunnel magnetoresistance
(TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure on
a 7.5-nm-thick MgO buffer. Spin-transfer torque induced magnetization switching
was achieved in the MTJs with a 2-nm-thick polycrystalline CFA film as a
switching layer. Using a thermal activation model, the intrinsic critical
current density (Jc0) was determined to be 8.2 x 10^6 A/cm^2, which is lower
than 2.9 x 10^7 A/cm^2, the value for epitaxial CFA-MTJs [Appl. Phys. Lett.
100, 182403 (2012)]. We found that the Gilbert damping constant evaluated using
ferromagnetic resonance measurements for the polycrystalline CFA film was
~0.015 and was almost independent of the CFA thickness (2~18 nm). The low Jc0
for the polycrystalline MTJ was mainly attributed to the low damping of the CFA
layer compared with the value in the epitaxial one (~0.04).