## Large transverse thermoelectric figure of merit in a Dirac semimetal

1,2 Junsen Xiang, 1,3 Sile Hu, 1,3 Meng Lyu, 1,3 Wenliang Zhu, 1,3 Chaoyang Ma,  Ziyu Chen, 2 1,4 Frank Steglich, 1,3,5 Genfu Chen, and 1,3,5 Peijie Sun

- 1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- 2 Department of Physics, Key Laboratory of Micro Nano Measurement Manipulation and Physics, --Beihang University, Beijing 100191, China
- 3 University of Chinese Academy of Sciences, Beijing 100049, China
- 4 Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
- 5 Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China

Thermoelectric  (TE)  conversion  in  conducting  materials  is  of  eminent  importance  for providing  renewable  energy  and  solid-state  cooling.  Although  traditionally,  the  Seebeck effect plays a key role for the TE figure of merit zST , it encounters fundamental constraints hindering  its  conversion  efficiency.  Most  notably,  there  are  th electrons and holes that diminishes this effect, and the intertwinement of the corresponding electrical and thermal conductivities through the Wiedemann-Franz (WF) law which makes their  independent  optimization  in zST impossible  [1,  2].  Here,  we  demonstrate  that  in  the Dirac  semimetal Cd3As2 the Nernst effect, i.e., the transverse counterpart of the Seebeck effect, can generate a large TE figure of merit zNT . At room temperature, zNT ≈ 0.5 in a small field  of  2  T;  it  significantly  surmounts  its  longitudinal  counterpart zST for  any  field  and further increases upon warming. A large Nernst effect is generically expected in topological semimetals, benefiting from both the bipolar transport of compensated electrons and holes and their high mobilities. In this case, heat and charge transport are orthogonal, i.e., not intertwined by the WF law anymore. More importantly, further optimization of zNT by tuning the Fermi level to the Dirac node can be anticipated due to not only the enhanced bipolar transport, but also the anomalous Nernst effect arising from a pronounced Berry curvature [3 - 6]. A combination of the former topologically trivial and the latter nontrivial advantages promises to open a new avenue towards high-efficient transverse thermoelectricity.

Thermoelectric (TE) devices can convert heat into electrical energy but may also be used as a heat pump in which electricity can drive a Peltier cooler. Various materials and differing concepts have been employed in order to achieve practical application [1, 2]. Here, the dimensionless figure of merit, zST = TSxx 2 / ρ xx  xx , plays the key role in characterizing the TE conversion efficiency. It contains the absolute temperature T , the Seebeck coefficient Sxx , the electrical resistivity ρ xx and the thermal conductivity  xx .  The  subscript  ' xx ',  which  denotes  diagonal  components  of  the  corresponding transport  matrix,  is  intentionally  added  to  distinguish  from  the  off-diagonal  counterparts  that  will define the transverse counterpart zNT . In classical TE materials, optimization of zST meets severe limitations. Most important is charge compensation of electrons and holes that contribute oppositely to Sxx (Fig. 1 a ).  Also, the Lorenz number fundamentally ties ρ xx and the electronic contribution to

thermal conductivity  xx e , i.e., L =  xx e ρ xx /T . L coincides with Sommerfeld's constant L 0 = 2.44 × 10 -8 WꞏΩꞏK 2 for  dominating  elastic  scatterings  (the  Wiedemann-Franz,  WF,  law).  Though  the  WF  law  is frequently violated to some extent at finite temperatures, it makes independent optimization of ρ xx and  xx for high zS T impossible. Any new designing principle circumventing (some of) these limitations will potentially achieve a big advance in TE application, such as the electron crystal-phonon glass approach, which proposes to minimize  xx while simultaneously keeping ρ xx low by crystal-structure engineering [7].

A  number  of  suited  TE  materials  have  recently  been  revisited  and  turned  out  to  be  topological materials [2, 8]. Except for some basic properties connecting both types of materials [8], e.g., the presence of heavy elements and small band gaps, characteristic reasons for advanced TE transport in topological materials have also been discussed. These include the specific band complexities [9 11] and charge relaxation processes [4,12,13] generally related to topological materials. However, the aforementioned topologically trivial limitations for TE performance exist for topological materials as well. Another, largely unexplored, prominent feature of these materials is the strong magnetic-field response, pertinent particularly to topological semimetals [14,15]: Here, in addition to the well-known chiral anomaly in the magneto-electrical conductivity, a strong effect of magnetic fields on the Seebeck effect was recently realized, too. For example, Wang et al. have reported a largely enhanced zST from 0.2 to 1.2 by applying a field B = 7 T at T = 370 K for the Dirac semimetal Cd3As2  [16].  Moreover,  a  large,  nonsaturating  Seebeck  effect  in  quantizing  magnetic  fields  has been theoretically predicted for Dirac/Weyl semimetals [17].

In case a magnetic field B z is  applied orthogonally to the temperature gradient d T x ,  a  transverse counterpart ( Sxy )  of Sxx ,  known as the Nernst effect (Fig. 1 b ),  appears too. Traditionally, Sxy has been intensively investigated mainly in elemental Bi and several of its binary alloys, like Bi-Sb [18 21],  where its  potential  for  TE  application  was  first  proposed.  The  key  ingredients  for  significant values  of Sxy ( B z )  revealed  in  these  works  include:  A  large  product  of ω τ c ( ω c is  the  cyclotron frequency and   the relaxation time) and a small Fermi energy τ ε F (see SM for explanation why Sxy tracks ω τ ϵ c / F in a single-band approximation) , as well as a strong electron-hole compensation that gives rise to a significant bipolar effect, see Fig. 1 b . Interestingly, similar conditions are inherent to a large  number  of  recently  discovered  topological  semimetals  [15].  Indeed,  a  large  Nernst  power factor, S xy 2 / ρ , was  found  in  NbP  [22]  where,  however,  a  large  thermal  conductivity  prevents realization  of  a  sizable  transverse  figure  of  merit zNT . Furthermore, an anomalous Nernst effect (ANE) due to a pronounced Berry curvature of the related electronic bands, in additional to the aforementioned  topological  trivial  origins,  has  been  proposed  [3  -  6,  23  -  25]  for  topological conducting materials with Dirac/Weyl nodes sufficiently close to ϵ F . Experimental verifications of this were reported very recently for NbP [25,26], TaP/TaAs [23] and Cd As  [24]. 3 2

In  this  paper,  we  demonstrate  that  Cd As   exhibits  a  sizable  transverse  figure  of  merit  which 3 2 surmounts its longitudinal counterpart in a wide temperature range above 100 K, amounting to zNT  0.5 (0.7) at T = 300 (350) K in B z =  2  (2.5) T. These zNT values, after being normalized by the corresponding field, are more than 2 times its longitudinal counter zST in this temperature window. More importantly, due to the remove of the two constraints that apply inherently to Sxx (see Fig. 1 b ), as  well  as  the  theoretically  predicted  addition  of  the  ANE,  the  transverse  thermoelectricity  in

topological semimetals appears to be much easier for further optimization by e.g., tuning the Fermi level.

As shown in Fig. 1 c , for Cd As  the magnitude of 3 2 Sxy ( T ) surpasses that of Sxx ( T ) already in weak magnetic fields, e.g. B z = 1 T, at T &gt; 100 K. This is even clearly demonstrated in Fig. 1 d where the ratio Sxy / Sxx ( T ) for B z = 0.5, 1, 2 and 3 T is shown. Furthermore, the initial Nernst coefficient, defined as Nini = d S xy /d B z at B z → 0, strongly increases with T and reaches 100 µV/KT at T ≈ 250 K (Fig. 1 e ) before decreasing smoothly. Such N ini ( T ) profile has been interpreted for topological semimetal NbP [26] as reflecting the T -dependent competition between electron- and hole- bands, i.e., the bipolar effect.  Subsequently,  the  existence  of  an  enhanced  ANE  was  also  emphasized  [25],  originating from the shift of the Fermi level ϵ F toward the Weyl node with increasing temperature [26]. A larger transverse relative to longitudinal TE  response can also be inferred from the so-called thermoelectric mobility µT = Nini / Sxx that is as large as its electrical counterpart, the Hall mobility µH ; the latter surmounts 10 m  V 2 -1 s -1 at T = 10 K, see Fig. 1 . A large value of f μ H pushes the strong field limit  ( μ H B &gt;  1)  down  to  below  1  T,  where ω τ c &gt;  1  is  already  realized.  These  properties,  in combination with the extremely low thermal conductivity of Cd As  [27, 28], are mainly responsible 3 2 for the unprecedented magnitude of transverse thermoelectricity of this compound in low fields.

Figure 2 compiles the full set of magneto-transport coefficients for sample S1 ( ε F = 253 meV, see SM) at selected temperatures in panels a -e .  In  panel f ,  we  compare  the  Nernst  effect  of  this sample to the previously reported values in ref. 24. See supplementary Fig. S3 for similar results of sample S4 with a higher ε F = 273 meV. Significantly, both Sxx ( Bz ) and Sxy ( Bz ) (Fig. 2 a and 2 b ) are sensitive to small fields. At T &gt; 50 K, they are substantially enhanced up to a certain value of B z  3 T, then the former quantity tends to saturate and the latter assumes a maximum, see Fig. 2 c , where Sxx ( Bz ) is compared to Sxy ( B z ) for T = 250 K. There, the value of S xy ( Bz ) can surpass S xx ( Bz ) at fields as low as Bz  0.6 T and by 50% at 2 T, as already indicated in the ratio S xy / S xx ( B z ) shown in Fig. 1 d . While Sxy ( Bz ) is substantially  larger  than Sxx ( Bz ) in moderate  fields,  we  note  that  the  field enhancement to the latter is already sizable and has been reported to cause a marked increase of zST in Cd As  [16], as mentioned in the introduction. 3 2

As far as TE conversion is concerned, the increase of ρ xx ( Bz ) (Fig. 2 d ) is almost compensated by the corresponding decrease of κ xx ( Bz ) (Fig. 2 e ), both of which appear in the denominator of zST . In other words, given that the WF law roughly holds at T  100 K, the thermal conductivity measured in this temperature range is predominantly electronic in origin and κ xx ρ xx ≈ κ xx e ρ xx =  L 0 T .  Indeed, as demonstrated in Fig. 2 e for T =150 K, the significant decrease of κ xx ( Bz )  up  to B z ≈  2  T  can  be explained by the estimated κ xx e ( Bz )  based on the WF law (dashed line). On the other hand, the phonon contribution to thermal conductivity, κ xx ph ( T ), is negligibly small at T &gt; 100 K compared to κ xx e ( T ),  see  Fig.  S5.  This  is  due  to  the  intrinsically  formed  crystallographic  vacancies  in  Cd As , 3 2 which is Cd-deficient of the ideal Cd As  antifluorite formula [27, 28]. Superior electronic transport 4 2 properties  coexisting  with  negligible  phonon  thermal  conductivity  was  also  observed  in  other topological semimetals such as WP2 [29] and ZrTe5 [30]. This situation yields an ideal playground for TE manipulation: Here, zST  Sxx 2 /L  and 0 Sxx is the only free parameter; a value of Sxx ≥ 155 µV/K would lead to zST ≥ 1. The same argument applies to the Nernst effect as well.

To  interpret  the  large  Nernst  effect  in  Cd As ,  comparison  with  other  semimetals  is  instructive. 3 2 Qualitatively similar profiles of both Sxx ( Bz ) and Sxy ( B z ) as observed in Cd As2 have been observed 3 in topological semimetal Pb 1-x SnxSe with x = 0.23, too [31]. There, low-field values of S xy ( Bz ) are somewhat lower but still sizable. For example, Sxy ( Bz = 2 T) ≈ 50 µV/K at T = 250 K. These values are, however, much smaller than the corresponding values of Sxx ( Bz ). The situation that Sxx (T , Bz ) ≫ Sxy ( T Bz , )  in  a  large  parameter  space  indicates  a  much  reduced  bipolar  transport  in  the  latter compound,  qualifying  it  as  a  state-of-the-art  (longitudinal)  TE  material  [1,  2,  31].  Consequently, rapid  increase  of  both Sxx ( Bz )  and Sxy ( Bz )  in  Pb 1-x SnxSe  ( x =  0.23)  in  low  fields  and  at  low temperatures ( T &lt; 150 K) has been successfully approached by a single, high-mobility band [31]. It imposes a competition between longitudinal and transverse differential logarithmic conductivities D =  ∂ln σ xx /∂ ε and DH =  ∂ln σ xy /∂ ε at  the  Fermi  level ε F .  It  is  this  competition  that  determines  the characteristic profiles of S xx ( Bz ) and S xy ( Bz ). By employing the experimentally obtained conductivity matrix  elements σ xx ( Bz )  and σ xy ( Bz ),  one  can  fit  the  measured Sxx ( Bz )  and Sxy ( Bz )  of  Cd As 3 2 independently. However, the obtained values of DH -D from the two fittings are already different at T = 50 K and the discrepancy further increases with T up to room temperature, see supplementary Fig. S6. Similar behavior has been discussed as originating from the increasing electron-hole bipolar effect  beyond  the  one-band  hypothesis  [31].  This  inference  applies  to  Cd As   as  well,  and  is  in 3 2 consistent to the inference made from the Nini ( T ) profile (Fig. 1 e ), which reveals a maximum near room temperature. Further evidence of bipolar transport in Cd As  comes from the non-linear 3 2 ρ xy ( Bz ) behaviors that indicate a dominating electron band and a hole band that increasingly compensates upon warming, see supplementary Figs. S7.

In analogy to z S T that is defined from Sxx , its transverse counterpart can be defined from Sxy [19],

$$z _ { N } T = T \frac { S _ { x y } ^ { 2 } } { \kappa _ { x x } \, \rho _ { y y } } \.$$

Here, κ xx and ρ yy take the values measured along x and y directions, respectively. This definition can  be  easily  rationalized  for  Nernst  configuration,  where  the  induced  electrical  current  (|| y )  is orthogonal to the driving thermal current (|| x ), see Figs. 1 b , 3 a, and ref. 19. In all our samples of Cd3As2, ρ is actually rather isotropic at least within the (112) plane that we focus on in this work, see supplementary  Fig.  S4.  We  therefore  use  the  simultaneously  measured ρ xx (rather  than  the separately measured ρ yy ) to compute zNT in order to reduce systematic errors. As shown in Fig. 3 b , the superiority of the transverse over the longitudinal TE effect in Cd As  is immediately apparent: 3 2 zNT Bz ( ) exhibits a maximum which, at T &gt; 150 K, is not only higher but also occurs at a lower field compared  to  the  maximum  in zST Bz ( ).  These  maximum  values,  denoted  as zNT max and zST max , respectively, are shown as a function of T in Fig. 3 c . There, zNT max is increasingly enhanced with temperature over its longitudinal counterpart by, e.g., approximately 50% at T = 350 K. After being normalized by their corresponding fields as zNT max / Bz max , the contrast between the two configurations becomes even more striking, see Fig. 3 d . Above T = 150 K, the maximum zT value per Tesla of the transverse TE configuration exceeds its longitudinal counterpart by about a factor of two in a wide temperature range.

Despite  its  marked  increase  at  low  fields,  the  value  of zNT is still inadequate  for  practical applications. A key parameter yet to be optimized is the Fermi energy ε F ,  which  determines the magnitude of not only the one-band and bipolar diffusion contributions to Sxy [21, 32], but also the

ANE [23 - 26]. A reduction of ε F is expected to enhance all these contributions in a Dirac semimetal. To  clarify  this  point,  we  have  derived  the  values  of ε F for  all  the  employed  samples  from  the experimentally  observed  quantum  oscillations  in ρ xx ( B z ), see  Fig.  S8.  Note  that,  within  the charge-neutrality condition, ε F is measured with respect to the energy of minimal electronic density of states, i.e., the energy of the Dirac node. As shown in Fig. 4, ε F spans the range of roughly 250 290  meV  from  sample  S1  to  S5.  Most  importantly  and  instructively,  both Sxy max and Nini ,  which characterize the magnitude of the Nernst effect, increase monotonically with lowering ε F , see Fig. 4. A  simple  extrapolation  indicates  that Sxy max would  be  greater  than  155  µV/K  if ε F &lt;  200  meV. Unfortunately, our sample syntheses could not yield reliable samples with ε F &lt; 250 meV. One batch (A5) reported in ref. [24], with Sxy max ≈  150 µV/K at Bz =  5  T,  is  reproduced in Fig. 2 ; the Fermi f energy  of  this  sample  is  estimated  to  be ε F ≈  205  meV  (see  SM),  which  indeed  meets  our expectation for larger Sxy , cf. Fig. 4. Given the dominating κ xx e in this temperature range, this very sample should exhibit a maximum zNT of order unity at T = 200 K. This simple relation between the Nernst  effect  and ε F reflects the  aforementioned  monotonic  enhancement  of  all  quantities contributing to Sxy upon decreasing ε F . By contrast, for the five samples investigated we could not find any significant variation of the zero-field values of Sxx . As discussed in the introduction, this is most likely due to a competition between bipolar and single-band Seebeck effects, where the former diminishes and the latter enhances the value of Sxx upon lowering ε F [20].

Our observations of large Sxy ( T Bz , ) values exceeding those of Sxx ( T B , z ) in a wide parameter space is  not  specific  to  Cd As ,  but  is  generally  expected  in  topological  semimetals.  An  extraordinarily 3 2 large value of Sxy ( T = 109 K; Bz = 9 T) ≈ 800 µV/K was recently observed in NbP, and found to be two orders of magnitude larger than the corresponding Sxx value [26]. This is not surprising because in  NbP ε F =  8.2  meV  is  very  close  to  the  Weyl  node,  leading  to  symmetric  electron  and  hole excitations that produce a particularly strong bipolar contribution to Sxy ,  as  well  as  an  enhanced Berry  curvature  strength  [23,  25]  that  gives  rise  to  very  large  value  of  ANE.  Unfortunately,  the thermal conductivity of NbP ( κ  250 W/Km at T = 300 K) is much too large to obtain a sizable zNT value [22, 33]. In WP , too, a large Nernst was observed, e.g., 2 Sxy ( T = 3.66 K, Bz = 5 T) ≈ 1 mV/K, although  at  much  lower  temperatures  [34].  As  has  been  discussed,  due  to  the  generically  high mobility of all the pertinent Dirac/Weyl semimetals, the strong-field limit with ω τ c &gt; 1 can be easily accessed by a field as low as 1 T. There, a larger Sxy over Sxx is anticipated, resembling the case of dominating transverse electrical conductivity with σ xy &gt; σ xx , see Fig. 1 d and refs. 26 &amp; 34. This is a field accessible even by commercial permanent magnet like Nd2Fe14B. Recently, Nernst effect in the  absence of external field  has  been  observed in a magnetic topological semimetal [35]. This certainly deserves more attention in future.

As already demonstrated for Cd3As2 [24], a steplike increase of Sxy ( Bz )  at  low  field  arising  from enhanced Berry curvature and characterizing the ANE is a significant additive to the conventional (diffusive) Nernst effect. This occurs if the Fermi level is sufficiently reduced towards the Dirac node [6, 23, 25], which may be achieved by a well-controlled sample synthesis. This situation appears to be  realized  for  the  case  of  sample  A5  in  ref.  24,  for  which  the  maximum  value  of Sxy ( Bz )  is reproduced in Fig. 4. A direct identification of a steplike ANE for our samples seems unlikely, see Figs. 2 b and S3 b . However, such a contribution is presumably involved in our samples, too, though being expected to be smaller given their higher ϵ F . Whether in future one can experimentally sort out

the  evolution  of  ANE  with ϵ F appears  to  be  instructive  for  improvement  of Sxy . The  largely unexplored  ANE  in  this  compound,  together  with  the  enhanced  diffusive  contribution  of  bipolar transport, promises a large room for further optimization of zNT . This is believed to be achievable simply  by  tuning  the  Fermi  energy  (Fig.  4).  Apart  from  their  fundamental  advantages  discussed above,  transverse  TE  devices  also  have  remarkable  merits  due  to  their  unique  configuration geometry. i) The TE conversion output of such devices scales with the sample size along y relative to x ,  which allows for various possibilities of shape engineering in order to maximize conversion efficiency [19]; ii) Both electrons and holes of a single material are already involved in the Nernst effect, leaving out the traditional idea of employing both n and p -type materials in one TE device, see Fig.3 a ;  iii)  Separation of electrical and heat flows into two orthogonal directions removes the fundamental constraint of the WF law; utilization of anisotropic transport becomes possible through, e.g., combining low κ xx and low ρ yy in one material.

## METHODS

Sample synthesis. Single crystals of Cd As  were grown by self-transport technique. Stoichiometric 3 2 amounts of cadmium and arsenic were first sealed in an evacuated quartz ampoule. The quartz ampoule was heated to 850 ℃ and then quenched in liquid nitrogen. The obtained polycrystalline Cd3As2 was filled in a quartz ampoule again. After evacuating and sealing, the ampoule was placed in a two-zone furnace with a temperature gradient from 575 to 500 ℃ for 10 days, and then naturally cooled down to room temperature. The single crystals grow in bulk form with well-defined facets, see inset of Fig. S1. X-ray diffraction of powered and single-crystalline samples was performed to confirm the proper crystal structure and the orientation (Fig. S1). The residual resistivity ratio RRR = ρ xx (300K)/ ρ xx (2K) is between 5 and 10 for all the samples investigated. This is in agreement with most published works on this compound [16, 27], except for several batches reported in ref. [36].

Transport measurements. The three relevant thermal transport coefficients Sxx , Sxy and κ xx , as well as  resistivity ρ xx were  measured  simultaneously  and  adiabatically  in  a  magnetic  field B z applied orthogonal  to  temperature  gradient  d Tx (Figs.  1 a ,  1 b and  1 c inset).  d Txx was  monitored  by  a field-calibrated,  thin  Chromel-AuFe0.07%  thermocouple  ( φ =  25  µm),  cf.  Fig.  S2.  All  the  five samples investigated in this work were bar-shaped by polishing the as-grown samples to typical dimension (3-4) × (1-2) × (0.3-0.5) mm , see  Fig. 1 3 c inset.  Note  that  the  field-induced  Nernst voltage Ey is  geometry  (more  precisely,  the  length-to-width  ratio)  dependent.  By  convention,  we adopt the geometry-normalized Nernst effect Sxy = A Ey /d Tx , with A = L x / L y being the length ratio of thermal and electrical flow [20]. All the thermal-transport measurements were performed within the (112) plane, with magnetic field B z applied normal to it. The five samples discussed in this work have  slightly  different  Fermi  energies,  which  were  estimated  from  the  respective  quantum oscillations in resistivity (Figs. 4 and S8).

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## Figures

FIG.  1 : Comparison  of  longitudinal  and  transverse  thermoelectric  effects  in  Cd As .  ( 3 2 a , b ) Schematic  illustrations  of  the  Seebeck  ( Sxx )  and  the  Nernst  ( Sxy )  effects  for  a  compensated conductor.  They  measure  the  longitudinal  and  transverse  thermoelectric  voltages Ex and Ey , respectively,  over  a  temperature  difference  d Tx .  For  the  latter  effect,  an  orthogonal  field B z is needed. Note the diminished Sxx in ( a ), as compared to the enhanced Sxy in ( b ) due to electron-hole bipolar conduction. As heat (|| x ) and electric flux (|| y ) are orthogonal in the latter, constraints of the WF law is circumvented when considering thermoelectric application. ( c ) Sxy ( T ) measured at B z = 1 T, as compared to Sxx ( T ) of Cd As2 3 . From the quasi-linear behavior of Sxx ( T ), a rough estimate of the Fermi energy ε F = 305 meV can be obtained by assuming Sxx ( T ) =  2 /2 k B / e k T B / ε F for simple metals. Inset: The photo image of the sample S1 mounted on sample holder. ( d ) The transverse to longitudinal thermoelectric ratio Sxy / Sxx at varying field B z = 0.5, 1, 2 and 3 T is shown as a function of T . ( e ) Initial Nernst coefficient Nini ( T ) defined as Sxy / B z ( B z → 0). ( ) Thermoelectric mobility f µT (= Nini / Sxx ) is compared to its electronic analog, i.e., the Hall mobility µH (= RH / ρ xx ).  Their values are much larger than 1 m /Vs (i.e., 2 ω τ c &gt; 1 at Bz = 1 T) below room temperature, indicating that both electric and thermoelectric responses in small fields are predominantly transverse. Data shown in panels c f -were measured for sample S1, with x || [110] and z  (112) plane.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00184v1-figure-0794f070-3f2c-402a-a0ff-aef6782f9516.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00184v1-figure-ebd9006f-3a75-474a-b436-316af9e3da49.jpg)

z

FIG. 2 : Electrical and thermal transport coefficients recorded in a perpendicular field scan at varying temperatures for sample S1. The Seebeck coefficient Sxx ( Bz ) and Nernst effect Sxy ( Bz ) are shown in ( a )  and  ( b ),  respectively.  In  ( c ), Sxx ( Bz )  and Sxy ( Bz )  for T =  250  K  are  compared,  with  the  latter largely exceeding the former between Bz = 1 and 4 T. ( d ) and ( e ) show electrical resistivity ρ xx ( Bz ) and  thermal  conductivity κ xx ( Bz )  at  the  corresponding  temperatures,  respectively.  Because  the electronic contribution κ xx e ( T ) dominates κ xx ( T ) at T &gt; 50 K (see supplementary Fig. S5), the field enhancement of ρ xx ( Bz ) and the field reduction of κ xx ( Bz ) are nearly compensated when considering TE application. Namely, κ xx ρ xx  L 0 T in this temperature window. Indeed, as shown in panel ( e , ) the measured κ xx ( Bz ) for T = 150 K can be well appraoched by the calculated κ xx e (= L 0 T / ρ xx ) at B &lt; 2 T. This  means that the denominator of the zST expression , ρ xx κ xx ,  approximates  to  a  constant  and practically, Sxx and Sxy become  the  solely  free  material  parameters  that  determine  the  TE performance. ( ) f Sxy ( Bz ) measured at T = 200 K for sample S1 is compared to that of A5 reported in ref. 24. The Fermi energy ϵ F is 253 and 205 meV for S1 and A5, respectively, see SM.

0.8

max

FIG. 3 : Enhanced transverse thermoelectricity in Cd As . 3 2 (a ) Schematics of longitudinal (upper) and transverse (lower) TE device. While the former needs both p- and n-type materials, the latter uses only one material with, however, inherent contributions from both types of charge carrier through biploar transport. ( b ) zNT B ( z ) in comparison to zST B ( z ) at selected temperatures for sample S1. ( c ) zNT max and zST max , i.e., the maximum values of zNT Bz ( ) and zST Bz ( ) observed at certain field Bz max , are  shown  as  a  function  of T .  ( d ) zT max normalized  to  the  corresponding  field Bz max for  both longitudinal  and  transverse  configurations,  where  the  latter  amounts  to  more  than  2  times  the former over a large temperature range above 100 K.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00184v1-figure-5d35f5b9-a9a9-447e-b298-6ac0dd19e7c9.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00184v1-figure-7a4dc4c7-9fba-4813-a68c-5750c9627e9f.jpg)

F

FIG. 4 : Longitudinal and transverse thermoelectric coefficients as a function of Fermi energy ε F for Cd3As2 at T = 250 K. Sxy max denotes the maximum values of Sxy ( Bz ), see Figs. 2 b &amp; S3 b , Nini the initial Nernst coefficient (cf. Fig. 1 e ). Both quantities increase monotonically with lowering ε F , owing to the simultansously enhanced single-band and bipolar diffusion contributions. Given the existence of ANE arising from Berry curvature in Cd As2 3 , it will also increase with lowering ε F [23 - 26]. The data point for sample A5 at ϵ F = 205 meV (reproduced from ref. 24; see Fig. 2 , too) was measured f at T = 200 K; it presumably would lead to a significant zNT of unity, see maintext. By contrast, the Seebeck  coefficient Sxx at  zero  field  reveals  no  significant ε F dependence.  This  can  be  easily understood by considering the opposite trend of single-band and bipolar effect in Sxx as a function of ϵ F .  While  lowering ϵ F will  enhance  the  single-band  Seebeck  effect,  it  also  enhances  the  bipolar transport which diminishes Sxx .
Junsen Xiang Sile Hu Meng Lyu Wenliang Zhu Chaoyang Ma Ziyu Chen Frank Steglich Genfu Chen Peijie Sun
Large transverse thermoelectric figure of merit in a Dirac semimetal
Thermoelectric (TE) conversion in conducting materials is of eminent
importance for providing renewable energy and solid-state cooling. Although
traditionally, the Seebeck effect plays a key role for the TE figure of merit
zST, it encounters fundamental constraints hindering its conversion efficiency.
Most notably, there are the charge compensation of electrons and holes that
diminishes this effect, and the intertwinement of the corresponding electrical
and thermal conductivities through the Wiedemann-Franz (WF) law which makes
their independent optimization in zST impossible. Here, we demonstrate that in
the Dirac semimetal Cd3As2 the Nernst effect, i.e., the transverse counterpart
of the Seebeck effect, can generate a large TE figure of merit zNT. At room
temperature, zNT = 0.5 in a small field of 2 T; it significantly surmounts its
longitudinal counterpart zST for any field and further increases upon warming.
A large Nernst effect is generically expected in topological semimetals,
benefiting from both the bipolar transport of compensated electrons and holes
and their high mobilities. In this case, heat and charge transport are
orthogonal, i.e., not intertwined by the WF law anymore. More importantly,
further optimization of zNT by tuning the Fermi level to the Dirac node can be
anticipated due to not only the enhanced bipolar transport, but also the
anomalous Nernst effect arising from a pronounced Berry curvature. A
combination of the former topologically trivial and the latter nontrivial
advantages promises to open a new avenue towards high-efficient transverse
thermoelectricity.