## Heavy-hole band splitting observed in mobility spectrum of p-type InAs grown on GaAs substrate

Jarosław Wróbel* a , Gilberto A. Umana-Membreno b , Jacek Boguski a , Dariusz Sztenkiel c , Paweł Piotr Michałowski d , Piotr Martyniuk a , Lorenzo Faraone b , Jerzy Wróbel c and Antoni Rogalski a

- a) Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland
- b) School of Electrical, Electronic &amp; Computer Engineering, The University of Western Australia, 35 Stirling Highway, Crawley WA 6009, Australia
- c) Institute of Physics of Polish Academy of Science, Aleja Lotników 32/46, 02 -668 Warsaw, Poland
- d) Institute of Electronic Materials Technology, Wólczyńska 133, 01 -919, Warsaw, Poland

* email: jaroslaw.wrobel@wat.edu.pl

## Abstract

High-quality  Be-doped  InAs  layer  grown  by  MBE  on  GaAs  substrate  has  been  examined  via magnetotransport measurements and high-resolution quantitative mobility spectrum analysis (HR-QMSA) in the range of 5 -300 K and up to 15 T magnetic field. The layer homogenity and dopant concentration has been proofed via HR-SIMS. The results shew 4-channel conductivity and essential splitting of the most populated hole-like channel below 55 K. The multilayer model concluded from the QMSA results has been compared with nextnano simulation.

Keywords: QMSA, Hall effect, InAs, mobility spectra, MBE, beryllium doping, valence bands, effective masses, SIMS, surface leakage

## 1. Introduction

The A III B V  binary compounds with approximately 6.1 Å lattice constant are currently under the great interest of both research groups [1] and manufacturers of advanced electronics [2]. There  are  many  reasons  for  the  6.1 Å family  popularity.  The  most  important  is  the extraordinary flexibility for band gap engineering achieved in the infrared energy range via compound alloying and the reduction of dimensionality [3]. Therefore, a wide range of highspeed and low-power devices can be realized, taking the advantage of GaAs, InSb and InAs properties  [4].  In  particular,  a  special  attention  is  devoted  to  ultra-thin  layers  and  low dimensional objects made of InAs, for example quantum dots [5], nanowires [6], topological insulators [7] and quantum wells [8]. Moreover, indium arsenide forms an active layer in various opto-electronic devices, like quantum cascade lasers [9] and infrared detectors [10].

As a result, more and more detailed knowledge about this compound and its interfaces is still needed for the design of complex structures meant for applications.

Especially, the precise description of electrical carrier transport in multi-layered structures is a key factor in the device fabrication. Here, the great progress has been made, in which the possibility  of  separated-conductivity-channels  observation  plays  an  important  role.  The separation  of  different  contributions  to  the  electrical  conductivity  has  become  possible through a technique known as the mobility spectrum analysis (MSA) [11]. This method is especially interesting for the characterization of valence bands (VBs) since the interpretation of measurement data obtained for p-type channels is much more demanding than for data collected  for  transport  via  normally-separated  conduction  band.  Therefore,  there  is  a relatively small number of literature reports, where multi-channel p-conduction is analyzed and e.g. light-hole effective-mass 𝒎𝒍𝒉 or hole mobility 𝝁𝒉 versus temperature are presented [12, 13].

In this paper we present the detailed study on electronic carrier transport in highly doped ptype InAs layer grown on the GaAs semi-insulating substrate. Structure uniformity has been analyzed  using  the  Secondary  Ion  Mass  Specrometry  (SIMS)  and  highly  symmetrical  4terminal electrical devices have been fabricated using the photo-lithography (PL) technique. Resistance and Hall effect have been measured in the temperature range 1.5 to 300 K at magnetic fields up to 16 T. The high quality of obtained data enabled us to apply the very precise variant of MSA  method,  the  so-called  High-Resolution  Quantitative-MobilitySpectrum Analysis (HR-QMSA) [11]. We identified up to four distinct conductance channels at  low  temperatures,  one  related  to  electrons,  second  one  to  light  holes  and  two  to  the metallic  transport  in  the  heavy-hole  band.  The  last  observation  has  been  related  to  the gradual reduction of strain caused by the lattice mismatch on the InAs/GaAs interface. This interpretation  has  been  supported  by  the  comparison  of  experimental  data  with  the numerical simulations performed for different temperatures, using the Nextnano code.

## 2. Device fabrication and measurements

The 2 μm p -type InAs epilayer was grown on (001)-oriented semi-insulating epi-ready GaAs substrate via RIBER Compact 21-DZ solid-source molecular beam epitaxy (MBE) system. The layer was deposited on 250 nm-thick GaAs smoothing buffer and high quality of the growth with minimal residual strain has been indicated by XRD and Raman spectroscopy analysis. Details of the growth procedure and basic characterization have been published elsewhere [14]. The InAs layer studied here was doped with Be-dopant of concentration ~ 2×10 18  cm -3 and  the  doping  uniformity  has  been  checked  via  SIMS  analysis  using  CAMECA  SC  Ultra system, with depth resolution below 1 nm. The Ga, In, C, O and Be intensities were recorded versus measurement time. Knowing the thickness of the InAs layer from HR-SEM results [14] we determined the sputter rate and depth profile. The results are presented in the Fig. 1a, in which the intensity signal is converted into the volume concentration as indicated on the right-hand axis.

Data shows that the sample is uniformly doped with beryllium. Be, as a light element, can be mixed into the sample during the ion bombardment more effectively than heavier elements like  In.  Note  that  the  Be  decay-length  is  quite  large.  However,  it  depends  strongly  on  the impact energy, so the observed uniformity of distribution is not a SIMS-related artifact. The concentration  of  carbon  and  oxygen  atoms  inside  the  layers  was  found  to  be  below  the detection  limit  (10 16   atoms\cm 3   and  3 × 10 16 atoms\cm 3 ,  respectively).  Nevertheless, monitoring of these signals allowed us to localize the buffer layer position. Obtained results confirm the assumed architecture of our sample and proof the high homogeneity of the Bedopant profile, which is important for the mobility spectrum analysis.

Fig. 1 (a) SIMS depth profile of the considered layer (left). (b) Schematic view on 5 mm-diameter cloverleaf shape sample and cross section with layer details inset (not in scale, right).

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00097v2-figure-b1e32e73-d172-4876-a2a7-1cac5831c5b8.jpg)

The application of the HR-QMSA method requires a very precise Hall effect measurements, therefore the special attention  has been devoted to the fabrication of highly symmetrical samples in the van der Pauw geometry [15], see Fig. 1b. The 4-terminal devices have been defined lithographically using AZ 4533 photoresist and NaOH water solution as a developer. The gold contacts were made by electrolytic deposition using the 1.2 % KAu(CN)2 water solution under 350 - 375 µA/cm 2  current density. In the following step, the target cloverleaf shape has been obtained in wet etching process. The surface outside the covered shape was etched down to the GaAs substrate using the orthophosphoric acid: citric acid: hydrogen peroxide: water (molar ratio: 1:1:4:16) solution and 0.4 mol/dm 3  hydrochloric acid water solution. Finally, gold wires have been bonded to contact areas. The photoresist has not been washed out after the etching stage, to protect the sample against oxidation during storage.

For the mobility spectrum analysis, not only the shape of a sample is important, but also the linearity of electrical response. Therefore, our devices have been electrically pre-examined in 300 K, in order to check the symmetry and the electrical contact quality by current-voltage linearity test in the voltage range from -150 mV to + 150 mV. All of the contact pairs gave linear response on voltage bias, where determinacy coefficient for linear function was better than R &gt; 0.999. Using excitation current Iexc. = 500 µA, the dissipated power was lower than 0.1 mW, as required [16]. Equally important, is the homogeneity of magnetic field. Therefore, for the purposes of this study the superconducting Cryogen Free Magnet System (CFMS) has been used in which magneticfield homogeneity ensures ≤ 0.1% total variation over 10 mm sphere diameter [17].

In this system, the Hall sample is placed on the special holder inside the variable temperature insert  (VTI),  directly  in  the  circulating  high-purity  helium,  which  is  kept  at  a  constant pressure. Such environment ensures very good thermal conductivity and in consequence the required temperature stabilization (2σ in the order of 6 20 mK, for 5 -300 K), monitored by CERNOX sensor. Our measurements have been performed over the ±15 T range for each temperature  in  the  so-called Step  Scan mode.  In  order  to  assure  the  proper  sample temperature, before each magnetic field scan sequence, at least 20 minutes long stabilization have been applied. The ΔB steps ha ve been chosen properly for uniform adjustment into log10 scale, namely 10 points on each decade. The results for two out of twelve resistances are shown in Fig. 2.

Fig. 2 (a) The example of experimental van der Pauw 4-point resistance surface plot [ Rij =f (T,B)], for one of eight  possible  configurations.  Indices i and j refer  to  contact  number  from  figure  1  and  each  of  crossline represent single measurement point. (b) The example of experimental van der Pauw Hall resistance surface plot [ RH(ik)(B) × B = Vji /  Iik = f (T,B)], for one of four possible configurations.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00097v2-figure-cd9f52d3-ab06-4b23-a831-b4f757e226f6.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00097v2-figure-586604f1-b167-42d3-8698-db36bb369a38.jpg)

As it is seen, the R4-point and the RH(ik)(B) × B curve families exhibit a high smoothness in the whole  ranges  of  magnetic  field  and  temperature.  Moreover,  the  corresponding  surfaces obtained  for  the  opposite  magnetic  fields  direction  (not  shown)  behaved  in  the  highly symmetrical and anti-symmetrical manner, as required by van der Pauw method. Therefore we conclude, that the sample was electrically homogeneous in agreement with SIMS analysis, discussed  earlier.  Most  importantly,  the R4-point resistance  is  clearly  non-monotonic  as  a function of magnetic field and Hall resistances reveal strong non-linearities. It is characteristic for the multi-carrier transport in semiconductors and can be analyzed by the mobility spectrum method.

## 3. Results and discussion

The main concept of mobility spectrum relies on transformation of measurement data from the  magnetic  field  ( B )  domain  into  the  mobility  ( µ )  domain.  The  general  idea  of  such calculations  is  to  obtain  the  conductivity  tensor  components 𝜎𝑥𝑥 (𝐵) and 𝜎𝑥𝑦 (𝐵) using experimental  Hall  constant 𝑅 (𝐵) H and  sheet  resistance 𝑅s (𝐵) values,  according  to  the following relations [11]:

$$\sigma _ { x x } ( B ) = \frac { R _ { s } ( B ) } { R _ { s } ^ { 2 } ( B ) + R _ { \text{H} } ^ { 2 } ( B ) B ^ { 2 } }, \ \sigma _ { x y } ( B ) = \frac { R _ { \text{H} } ( B ) B } { R _ { s } ^ { 2 } ( B ) + R _ { \text{H} } ^ { 2 } ( B ) B ^ { 2 } }.$$

These coupled expressions contain information about all carriers present in the sample according to the discrete mobility transform equations [18]:

$$\sigma _ { x x } ( B ) = \sum _ { j } \frac { S _ { p } ( \mu _ { j } ) + S _ { n } ( \mu _ { j } ) } { 1 + \mu _ { j } ^ { 2 } B ^ { 2 } }, \ \ \sigma _ { x y } ( B ) = \sum _ { j } \frac { [ S _ { p } ( \mu _ { j } ) - S _ { n } ( \mu _ { j } ) ] \mu _ { j } } { 1 + \mu _ { j } ^ { 2 } B ^ { 2 } },$$

where 𝑆𝑝 (𝜇) = e𝜇𝑝(𝜇) and 𝑆𝑛 (𝜇) = e𝜇𝑛(𝜇) are the hole and electron mobility spectra (i.e., hole and electron conductivities in the mobility domain). The symbols 𝑝𝑠 (𝜇) and 𝑛𝑠 (𝜇) are hole  and  electron  sheet  densities  respectively,  e  is  the  electronic  charge.  Therefore,  to identify  each  type  of  the  multiple  carriers  contributing  to  transport  we  have  to  obtain mobility distributions 𝑆𝑝 (𝜇 ) 𝑗 or 𝑆𝑛(𝜇𝑗 ) , using the appropriate numerical methods.

The  basic  algorithms  for  that  purpose  have  been  described  by  Beck  and  Anderson  [18], however, they might be insufficient for a proper recognition of multi-channel conductivity in semiconductor  devices  [19].  Fortunately,  a  significant  progress  has  been  made  in  recent years and new, improved methods have been successfully tested on many different material systems [20, 21]. Here we applied high-resolution quantitative mobility spectrum analysis (HR-QMSA) [11], which previously gave excellent results for proper recognition of carrier transport trough valence bands in non-intentionally doped GaSb substrate [22]. Results of HR-QMSA method applied to our data are shown in Fig. 3.

Fig. 3 (a) Hole mobility spectra 𝑆𝑝 (𝜇 𝑗 ) versus temperature Three different hole-like conductivity channels (H1, H1 ' and H2 ) have been recognized in low temperature regime. The increase of ΔT is non -linear. It follows constant step in log10T scale. (b) Electron mobility spectra 𝑆𝑛 (𝜇 𝑗 ) versus temperature. Here, only single conductivity channel is visible. The influence of this channel on total conductivity is less than 3,5 % for all temperatures below 30 K.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00097v2-figure-a297078a-b8e7-4721-a1da-2ee7b3abe449.jpg)

Clearly, we identify the four distinct mobility spectra peaks, which contribute to the total conductivity tensor. One is electron-like (denoted E1 ) and three others are hole-like (denoted H1 , H1 ' and H2 ).  Note  that H1 ' peak disappears for higher temperatures T &gt; 55 K or rather merges  with  stronger H1 contribution.  Note  also,  that H2 feature,  which  corresponds  to carriers with the highest mobility, is rather weak. From the obtained mobility spectra, we calculated the partial conductivity 𝜎𝑖 , mean Hall mobility 𝜇 𝑖 H and sheet carrier concentration 𝑁𝑖 associated with the  -th conductivity peak, using the following formulas i

$$\sigma _ { j } = \sum _ { i } S _ { i } ( \mu _ { i } ) \,, \ \mu _ { j } ^ { \text{H} } = \frac { 1 } { \sigma _ { i } } \sum _ { i } \mu _ { i } S _ { p } ( \mu _ { i } ) \,, \ \ N _ { j } = \frac { \sigma _ { j } } { \mu _ { j } ^ { \text{H} } }.$$

Results, as a function of temperature, are shown in Fig. 4. The densities 𝑁𝑗 and corresponding mobilities 𝜇 𝑗 H are collected on the left side, the stack area plot of partial conductivities 𝜎 𝑗 is presented on the right.

Fig. 4 . - Hall mobilities (A) and partial densities (B) vs temperature in the log-log scale. The partial contributions to the total conductivity are shown on the right (C) as the stacked area plot. The whole temperature range is divided into  characteristic regions, numbered from I to IV.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00097v2-figure-e2540759-d570-4a00-9470-46bc3ac141d1.jpg)

Both plots reveal at least four characteristic temperature ranges. At T &lt; 30 K (region I) and for T &gt; 150 K (region  IV) all conductivities, in spite of small  fluctuations, decrease monotonically and the mobility spectra peaks become wider with increasing T .  This is not the case for the intermediate range of temperatures (regions II and III), in which the partial conductivities  fluctuate  very  strongly.  At  the  same  time,  the  width  of  dominant H1 , contribution  decreases,  somehow ' at  the  cost"  of  electron-like  peak E1 ,  which  becomes dominant at T = 80 K.

We believe, that E1 peak, detected at low temperatures, is associated with the presence of a surface inversion layer, observed on p-type InAs samples since the 1970s [23]. Later, the direct evidence for the existence of charge accumulation on free and clean InAs surfaces were reported, independently on type and doping level [24, 25]. Currently it is widely believed, that InAs has naturally high concentration of surface electrons, which might be e.g. the main source  of  anomalous  effects  in  temperature  behavior  of  Seebeck  coefficient  [26].  For example, Olsson et al [25] estimated electron surface concentration on about 10 12  cm -2 , which compares  well  with  our  estimation  of 𝑛 𝑆𝑒𝑡 𝐼 ≈ 3 × 10 12 cm -2 , at  the  lowest  temperatures. Similar results have been obtained at T = 300 K by Lin et al [27] by QMSA method for the surface electrons on n-type sample, which also supports our identification of E 1 peak. It is very unlikely, however, that the surface electron concentration reaches the extremely high value of 6.55 × 10 14  cm -2 , at T = 80 K, as can be observed in Fig. 4. Therefore, the unexpected behavior of E1 peak at the temperature ranges II and III might be an artifact of QMSA method, as we showed by the model calculations, described below.

Clearly,  such  artifacts  related  to  electrons  may  also  affect  the  identification  of  a  hole-like mobility spectra. Fortunately, it is not the case for T &lt; 30 K and T &gt; 200 K, therefore in the following  we  concentrate  on  the  results  obtained  at  low  (region  I)  and  high  (region  IV) temperatures.  Judging  from  the  partial  concentrations  and  mobilities, H1 spectrum  is associated with heavy holes, whereas H2 peaks originate from the presence of light holes, in agreement with the recent results of Casias et al [28] for very similar 2µm -thick InAs0.91Sb0.09 layer, acceptor doped at 3 × 10 18 cm -3  obtained at T = 300 K. However, it is not clear what is the origin of the strong splitting of heavy hole spectra, observed at low temperatures, which gradually disappears when peaks broaden and start to overlap.

In order to answer this question, we firstly assumed that the presence of the additional H1 peak is not related to the inhomogeneity of our sample. Indeed, an anisotropy of conducting material can lead to a wrong number of carries species obtained by the mobility spectrum analysis, as it was shown for two-carrier transport in a Hall-bar device [29]. However, the SIMS results (see Fig. 1a) show the excellent uniformity of both parent atoms and Be-dopant. Moreover, we believe that the application of van der Pauv method effectively averages any residual inhomogeneities of our sample. Secondly, we considered the anisotropy (so-called warping) of valence band, which is characteristic for all A III B V  materials. We calculated the effective mass tensor for heavy-holes using the InAs parameters which showed that for a spherical  Fermi  surface  and  degenerate  statistics 𝜎𝑥𝑥 indeed  deviates  from  the  Drude 's formula. However, in reality, Fermi momentum kF depends on crystallographic direction so it should be taken into account in further studies. Anyhow, we assumed that the additional H1 ' peak is not related to QMSA artifact, but to a hole conduction in the degenerate valence band.

Metallic  transport  and  degenerate  statistics  is  suggested  by  a  very  weak  temperature dependence of partial conductivities, observed up to T ~ 10 K. For higher temperatures, the H1 ' contribution  increases,  which  may  suggest  hopping-like  conduction,  which  is  rather typical for an amorphous films [30] In our case, the . H1 ' conductivity does n ot follow Mott' or Efros Shklovskii'  laws [31] and the total contribution H1 + H1 ' is  practically  temperature independent up to 30 K (region I). The above conclusions led us to propose an alternative explanation of the splitting. We inferred that such effect is a result of strained InAs interlayer presence between GaAs substrate and fully relaxed InAs layer. This assumption has been verified via numerical calculations performed in the nextnano software [32].

## 4. Model and comparison with experiment

The assumptions about geometry do not differ much from the presented in the figure 1b, except additional 20 nm surface cap layer and 200 nm strained inter-layer. The details have been presented in the figure 5. Beginning from the top part, we have 20 nm surface states that  correspond  to  E1  channel.  Unfortunately,  proper  modelling  of  the  surface  effects (especially for InAs) is a difficult challenge. In order to avoid this inconvenience we proposed two numerical treatments. First we use higher than 'standard' effective density -of-states electron mass (𝑚𝑒𝐷𝑂𝑆 ∗ = 0.25 m0) ,  which corresponds in our model to electron state from asymmetric-near-surface quantum well. Second, we added two extra donor states in order to obtain the effect of electron concentration increasing above 30 K. Their concentrations have been: 𝑛𝑑 = 3.0 × 10 19 cm -3 and 𝑛𝑑 = 5.0 × 10 20 cm -3 , with  activation  energies: 𝐸𝐷1 = -15 meV and 𝐸𝐷2 = -5 meV respectively. Numerical procedures for obtaining desired near surface concentration, like increasing the 𝑚𝑒𝐷𝑂𝑆 ∗ value, is rather typical treatment . In this case however more detailed calculations would be needed.

Fig. 5. Calculated bandstructure depth profile of  assumed geometrical model of InAs layer on GaAs substrate Presented example is for 20 K (left side). The Fermi level position calculated from the InAs midpoint crossing the top of the heavy holes band above 100 K (right side).

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00097v2-figure-fb088ef5-8004-41c8-b819-ea6b058c32ff.jpg)

Due to expected strain effects, we divided InAs layer (except surface) into two regions. We assumed that the first 1780 nm layer is practically relaxed, with 𝜀𝑥𝑥 = 𝜀|| = -0.8  × 10 -3 and 𝜀𝑧𝑧 = 𝜀┴ = 0.9 × 10 -3 . It is similar to averaged XRD and Raman measurements results (from this growth) published earlier, in which the parallel and perpendicular residual strain have been determined to be -1.17 ×  10 -3 ,  and  1.12  ×  10 -3 ,  respectively  [14].  The  second 200 nm layer, close to the GaAs interface, has been assumed as relatively heavy stained with the parallel and perpendicular residual strain equal to 𝜀𝑥𝑥 = 𝜀|| = -0.0181 and 𝜀𝑧𝑧 = 𝜀┴ = 0.0197 respectively.  For  the  both  layers  the  concentration  of  Be  acceptors  was 𝑛𝐴 = 3.2 × 10 18 cm -3 ,  with  different  acceptor  ionization  energies equal to 𝐸𝑎 = -14 meV in  the first layer and 𝐸𝑎 = -8 meV in the second one, counted from the top of the heavy hole band. The  effective  density-of-states  mass  of  electrons  and  all  valence  bands,  i.e.:  heavy-hole ( 𝑚ℎℎ\_𝐷𝑂𝑆 ∗ ),  light-hole  ( 𝑚𝑙ℎ\_𝐷𝑂𝑆 ∗ )  and  split-off  band  ( 𝑚𝑠𝑜\_𝐷𝑂𝑆 ∗ ),  have  been  used  the  same  as suggested in the literature, namely: 0.026 m0 , 0.41 m0 , 0.026 m0 and 0.14 m0 ,  respectively [13]. It should be noted, that the model did not require any special assumptions about the InAs/GaAs interface. GaAs 'epi ready' substrate b -efore InAs deposition has been capped by the  0.5 µm GaAs layer,  which  effectively  covered  leftovers  of  impurities.  Thus  we  didn't expected additional highly conductive inter-layer.

In the bottom left side of the figure 5, the most interesting parts are placed between 500 and 700 nm and close to the surface region. For the first area valence band splitting on over 100 meV can be observed. In our opinion despite of relatively low thickness, this layer is the most probably source of the mobility spectra splitting (see fig. 3a). The latter region, in our model, is the single electron source region in the sample. We rejected here the intrinsic sheet concentration of electrons, as a reliable explanation of the origin of the E1 , because even for 300 K, this channel is negligibly small (~ 1×10 8 cm  -2 ). Moreover, we performed qualitative verification  of  calculations  correctness.  Namely,  the  relative  Fermi  level  position  in  the middle of unstrained InAs layer versus temperature has been checked in order to confirm occurring of the metal-semiconductor transition (right side of the figure 5). The plot crosses the zero value, which means that the Fermi level crossing the top of the heavy-hole band. This process takes place not exactly for 55 K, as in QMSA results, but for about 105 K. The detailed fitting  procedures  would  be  needed  here,  but  qualitatively  results  generally  confirms assumed model.

It is worth noting that negative ionization energies for acceptors have been used intentionally in order to simulate metallic conduction. Namely, Ea = - 14 meV in the first layer and Ea = -8 meV in the second one, counted from the top of the heavy hole band. These  values are different from the literature data of Ea ≈ 20 meV [28]. However it is well known that as the dopant concentration increases, the dopants start to interact and form an impurity band [3335].  The  increase  of  the  width  of  this  band  decreases  the  ionization  energy    [33-36].  For sufficiently high  dopant  concentration  the  associated  broad  impurity  band  and  the conduction (valence) band edge merge leading to the negative ionization energies.

In  the  final  step,  the  comparison  between  presented nextnano simulation  and  HR-QMSA analysis has been performed. The results have been gathered in the figures 6a and 6b. Except transitional regime and the results for channel H1 ' , figure 6a shows good agreement between two methods. Howefer the obtained numerical curves have no additional peaks for 30 K &lt; T &lt; 110 K and they behavior are smoother than the experimental ones.  In our opinion, this comparision suggests also that unexpected apperance of E1 peak might be an artifact of QMSA method.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00097v2-figure-a1f1aa90-37d1-46e3-bda7-05e0b5a6163c.jpg)

Fig. 6a. -Comparison of nextnano calculation results (solid lines and dashed line for heavy-hole counted for

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00097v2-figure-6769a466-3905-4bd4-81f7-d605be6e642a.jpg)

Fig.  6b -Normalization  to  the  assumed  layers thicknesses  and  changing  units  into  cm -3   show

200 nm InAs inter-layer) with sheet densities obtained by Hall measurements and HR-QMSA analysis (colored dots with the same description as in the fig. 4a).

that volume concentration of both: relaxed 1.8 um and strained 0.2 um are nearly the same.

In Fig 6a, normalization to the depth profile has not been applied. It has been made in the next step, in which normalization to the assumed layers thicknesses and changing units into cm -3  show that volume concentration of both 1.8 um relaxed and 0.2 um strained are nearly the same  in  the  Boltzman  statistics  regime.  We  infer  here,  that  the  same  volume concentrations might be the reason of disappearing of H1 ' as a separate channel for T &gt; 55 K. In  our  opinion  this  is  the  most  probably  explanation  of  the  observed  heavy-hole  band splitting via HR-QMSA method.

## 5. Conclusions

The set of arguments have been presented that observed splitting of the heavy-hole band mobility spectra origin from the thin, strained InAs interlayer between GaAs substrate and fully relaxed InAs layer, despite its very high quality confirmed via multiple characterization techniques.  Apart  from  the  heavy-holes  we  identified  also  two  additional  channels.:  one related  to  electrons,  second  one  to  light  holes  in  the  whole  temperature  range:  5 -300 K. These results confirm usefulness of the HR-QMSA technique even for the degenerate statistic regime. This interpretation has been supported by the comparison of experimental data with the numerical simulations performed for different temperatures, using the nextnano code.

## Acknowledgments

This study was carried out with the financial support from the Polish National Science Center (grant no. UMO-2015/17/B/ST5/01753).

## References

[1] B.V. Shanabrook, W. Barvosa-Carter, R. Bass, B.R. Bennett, J.B. Boos, W.W. Bewley, A.S. Bracker, J.C. Culbertson, E.R. Glaser, W. Kruppa, R. Magno, W.J. Moore, J.R. Meyer, B.Z. Nosho, D. Park, P.M. Thibado, M.E. Twigg, R.J. Wagner, J.R. Waterman, L.J. Whitman, M.J. Yang, Engineered heterostructures of 6.1-Angstrom III-V semiconductors for advanced electronic and optoelectronic applications,  SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, SPIE, 1999, pp. 10.

[2] H. Kroemer, The 6.1 Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review, Physica E: Low-dimensional Systems and Nanostructures, 20 (2004) 196-203. [3] A. Rogalski, M. Kopytko, P. Martyniuk, Antimonide-based Infrared Detectors: A New Perspective, SPIE, 2018.

- [4] A.G. Milnes, A.Y. Polyakov, Indium arsenide: a semiconductor for high speed and electrooptical devices, Materials Science and Engineering: B, 18 (1993) 237-259.
- [5] D. Franke, D.K. Harris, O. Chen, O.T. Bruns, J.A. Carr, M.W.B. Wilson, M.G. Bawendi, Continuous injection synthesis of indium arsenide quantum dots emissive in the shortwavelength infrared, Nat Commun, 7 (2016) 12749.
- [6] Y. Xiong, H. Tang, X. Wang, Y. Zhao, Q. Fu, J. Yang, D. Xu, Significantly enhanced thermal conductivity of indium arsenide nanowires via sulfur passivation, Sci Rep-Uk, 7 (2017) 13252.

[7] C.H. Li, O.M.J. van 't Erve, S. Rajput, L. Li, B.T. Jo nker, Direct comparison of currentinduced spin polarization in topological insulator Bi2Se3 and InAs Rashba states, Nat Commun, 7 (2016) 13518.

[8] A.V. Thathachary, N. Agrawal, K.K. Bhuwalka, M. Cantoro, Y. Heo, G. Lavallee, S. Maeda, S. Datta, Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs,  2015 Symposium on VLSI Technology (VLSI Technology), 2015, pp. T208-T209.

- [9] M. Bugajski, K. Kosiel, A. Szerling, J. Kubacka-Traczyk, I. Sankowska, P. Karbownik, A. Trajnerowicz, E. Prus zyńska Karbownik, K. Pierściński, D. Pierścińska, GaAs/AlGaAs ( -μm) quantum cascade lasers operating at 260 K, B Pol Acad Sci -Tech, 58 (2010) 6.
- [10] W. Pusz, A. Kowalewski, W. Gawron, E. Plis, S. Krishna, A. Rogalski, MWIR type-II Applications, SPIE, 2013, pp. 11.
- 9.4 InAs/GaSb superlattice interband cascade photodetectors,  SPIE Optical Engineering +
- [11] J. Antoszewski, G.A. Umana-Membreno, L. Faraone, High-Resolution Mobility Spectrum Analysis of Multicarrier Transport in Advanced Infrared Materials, Journal of Electronic Materials, 41 (2012) 2816-2823.
- [12] W. Nakwaski, Effective masses of electrons and heavy holes in GaAs, InAs, A1As and their ternary compounds, Physica B: Condensed Matter, 210 (1995) 1-25.
- [13] I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan, Band parameters for III-V compound semiconductors and their alloys, Journal of Applied Physics, 89 (2001) 5815-5875.
- [14] J. Wróbel, K. Grodecki, D. Benyahia, K. Murawski, K. Michalczewski, J. Grzonka, J. Boguski, K. Gorczyca, G.A. UmanaMembreno, Ł. Kubiszyn, A. Kębłowski, P.P. Michałowski, E. Gomółka, P. Martyniuk, J. Piotrowski, A. Rogalski, Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate,  Thirteenth Integrated Optics: Sensors, Sensing Structures and Methods Conference, SPIE, Szczyrk, Poland, 2018, pp. 6.

[15] K. Gorczyca, J. Boguski, J. Wrobel, P. Martyniuk, Selected technological aspects of preparation of semiconductor samples for  Hall effect measurements,  The 13th Conference Integrated Optics - Sensors, Sensing Structures and Methods, SPIE, Szczyrk, 2018. [16] NIST, Resistivity and Hall Measurements.

- [17] Cryogenic\_Ltd, Cryogen-Free Magnet System User Manual, London, 2014.
- [18] W.A. Beck, J.R. Anderson, Determination of electrical transport properties using a novel magnetic field-dependent Hall technique, Journal of Applied Physics, 62 (1987) 541 -554.
- [19] J. Antoszewski, L. Faraone, Quantitative mobility spectrum analysis (QMSA) in multilaver semiconductor structures, Opto-Electron Rev, 12 (2004) 347-352.
- [20] S. Kiatgamolchai, M. Myronov, O.A. Mironov, V.G. Kantser, E.H.C. Parker, T.E. Whall, Mobility spectrum computational analysis using a maximum entropy approach, Phys Rev E, 66 (2002).

[21] D. Chrastina, J.P. Hague, D.R. Leadley , Application of Bryan's algorithm to the mobility spectrum analysis of semiconductor devices, Journal of Applied Physics, 94 (2003) 65836590.

[22] H. Kala, G.A. Umana-Membreno, G. Jolley, N.D. Akhavan, M.A. Patrashin, K. Akahane, J. Antoszewski, L. Faraone, Heavy and light hole transport in nominally undoped GaSb substrates, Appl Phys Lett, 106 (2015).

[23] H.H. Wieder, Transport coefficients of InAs epilayers, Appl Phys Lett, 25 (1974) 206208.

[24] M. Noguchi, K. Hirakawa, T. Ikoma, Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces, Phys Rev Lett, 66 (1991) 2243-2246.

[25] L.Ö. Olsson, C.B.M. Andersson, M.C. Håkansson, J. Kanski, L. Ilver, U.O. Karlsson, Charge Accumulation at InAs Surfaces, Phys Rev Lett, 76 (1996) 3626-3629.

[26] M.C. Wagener, V. Wagener, J.R. Botha, Thermoelectric evaluation of the dopant density of p-type InAs, Appl Phys Lett, 94 (2009) 262106.

[27] Y. Lin, A.R. Arehart, A.M. Carlin, S.A. Ringel, Separation of bulk and surface electron transport in metamorphic InAs layers using quantitative mobility spectrum analysis, Appl Phys Lett, 93 (2008) 062109.

[28] L.K. Casias, C.P. Morath, E.H. Steenbergen, P.T. Webster, J.K. Kim, V.M. Cowan, G. Balakrishnan, S. Krishna, Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications, Infrared Phys Techn, 96 (2019) 184-191.

[29] K.S. Stephenson, Y.B. Bazaliy, On the pitfalls of applying isotropic mobility spectrum analysis to conductors with weak anisotropy, Journal of Applied Physics, 124 (2018) 125103.

[30] Y. Yao, B. Bo, C. Liu, The hopping variable range conduction in amorphous InAs thin films, Current Applied Physics, 18 (2018) 1492-1495.

[31] N.V. Agrinskaya, V.I. Kozub, N.Y. Mikhailin, D.V. Shamshur, Scaling of the breakdown in the impurity band of doped GaAs/AlGaAs quantum well demonstrating virtual Anderson transition, Solid State Communications, 260 (2017) 6-9.

[32] Nextnano, 2019.

[33] B. Santic, Statistics of the Mg acceptor in GaN in the band model, Semicond Sci Tech, 21 (2006) 1484-1487.

[34] S. Brochen, G. Feuillet, J.L. Santailler, R. Obrecht, M. Lafossas, P. Ferret, J.M. Chauveau, J. Pernot, Non-metal to metal transition in n-type ZnO single crystal materials, Journal of Applied Physics, 121 (2017).

[35] S. Brochen, J. Brault, S. Chenot, A. Dussaigne, M. Leroux, B. Damilano, Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy, Appl Phys Lett, 103 (2013).

[36] I. Stenger, M.A. Pinault-Thaury, T. Kociniewski, A. Lusson, E. Chikoidze, F. Jomard, Y. Dumont, J. Chevallier, J. Barjon, Impurity-to-band activation energy in phosphorus doped diamond, Journal of Applied Physics, 114 (2013).
Jaroslaw Wrobel Gilberto Umana-Membreno Jacek Boguski Dariusz Sztenkiel Pawel Piotr Michalowski Piotr Martyniuk Lorenzo Faraone Jerzy Wrobel Antoni Rogalski
Heavy-hole band splitting observed in mobility spectrum of p-type InAs grown on GaAs substrate
High quality berylium doped InAs layer grown by MBE on GaAs substrate has
been examined via magnetotransport measurements and high resolution
quantitative mobility spectrum analysis in the range from 5 to 300 K and up to
15 T magnetic field. The layer homogenity and dopant concentration has been
proofed via HR-SIMS. The results shew four channel conductivity and essential
splitting of the most populated holelike channel below 55 K. The multilayer
model concluded from the QMSA results has been compared with nextnano
simulation.