## Thermopower enhancement by fractional layer control in 2D oxide superlattices

Woo Seok Choi 1,2,3* , Hiromichi Ohta 4 , and Ho Nyung Lee 1**

1 Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA

2 Department of Physics, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Korea 3 IBS Center for Integrated Nanostructure Physics, Institute of Basic Science (IBS), Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Korea

4 Research Institute for Electronic Science, Hokkaido University, N20W10, Sapporo 001-0020, Japan * e-mail: choiws@skku.edu.

** e-mail: hnlee@ornl.gov.

We have investigated two-dimensional thermoelectric properties in transition metal oxide heterostructures. In particular, we adopted an unprecedented approach to direct tuning of the 2D carrier density using fractionally δ -doped oxide superlattices. By artificially controlling the carrier density in the 2D electron gas that emerges at a La Sr x 1x TiO3 δ -doped layer, we demonstrate that a thermopower as large as 408 μ V K -1 can be reached. This approach also yielded a power factor of the  2D  carriers  117 μ Wcm -1 K -2 ,  which  is  one  of  the  largest  reported  values  from  transition  metal oxide based materials. The promising result can be attributed to the anisotropic band structure in the 2D system, indicating that δ -doped oxide superlattices can be a good candidate for advanced thermoelectrics.

Thermoelectric  phenomenon  is  indispensable  in  understanding  the  transport  nature  of  itinerant charge  carriers  and  their  interaction  with  the  crystal  lattice.  In  practical  sense,  it  is  utilized  to convert  heat  into  electric  power  (Seebeck  effect)  or  to  generate  temperature  gradient  from electricity (Peltier effect). Therefore, thermoelectric power generation is considered as one of the most  important  technologies  for  sustainable  energy.  The  thermoelectric  efficiency  is  often quantified  by  the  thermoelectric  figure  of  merit ZT =  ( S 2 σ κ / ) T ,  where S , σ , κ ,  and T are  the Seebeck coefficient or thermopower, the electrical conductivity, the thermal conductivity, and the absolute  temperature,  respectively.  In  order  to  achieve  a  high ZT value,  the  prerequisites  of materials are large S and σ , and low κ . However, phenomenologically, S and log σ are inversely proportional to each other, which poses difficulty in maximizing the ZT value. [1] Moreover, σ and κ are linearly proportional to each other if the thermal transport is dominated by charge carriers instead of phonons, again limiting the controllability of ZT . Therefore, in most cases, achieving a delicate balance among S , σ , and κ is the key to achieving the maximum ZT value.

Until recently, the majority of the research on thermoelectric materials has been devoted to the conventional semiconductors such as Bi Te  and PbTe, partially owing to their high efficiency. 2 3 [1] However, their volatile nature especially at high temperatures and the use of toxic elements (such as  Pb,  Sb,  Se,  and  Te)  prevented  these  materials  from  being  a  ubiquitous  choice.  On  the  other hand, recent studies reported that transition metal oxides (TMOs) can be a promising candidate for highly efficient thermoelectrics with high | S |  and σ ,  and hence, the high power factor ( PF = S 2 σ ). [2, 3] More importantly, in most cases, the strong correlation uniquely found in TMOs can be a useful tool for developing new thermoelectric materials. For example, Na CoO  showed a large x 2 | S |  due to a strong electronic correlation, [4] and low dimensional Nb-doped SrTiO  exhibited an 3 unexpectedly  large PF [5-7] by  a  dimensional  crossover  of  the  polaronic  behavior. [8, 9] More

recently, it has also been shown that TMO superlattices can have minimized thermal conductivity due  to  the  crossover  from  incoherent  to  coherent  phonon  scattering,  suggesting  that  it  can  be beneficial  for  thermoelectric  applications. [10] Owing  to  the  versatile  physical  properties  of  the TMOs, the thermoelectric properties can be further investigated in terms of complex electronic and crystallographic structures, such as disproportionate band structure, effective mass anisotropy, dimensionality, and formation of heterointerfaces. [2, 3] We further  emphasize that the additional degree of freedom in TMOs (i.e., charge, spin, orbital, and lattice) and strong coupling among them could lead to an unprecedented thermoelectric behavior with novel physical origins. [11]

In addition to the selection of appropriate materials system, the geometry of samples also plays a critical role in determining the thermoelectric efficiency. [12, 13] In  particular, a large | S |  could be achieved due to the modified electronic structure near the Fermi level ( E F )  in  low  dimensional structures. For example, quantum confinement effect on the thermoelectric property was observed in  a  PbTe/Pb 1x Eu Te  multiple  quantum  well  structure, x [12] and  enhancement  of  | S |  due  to  the electron  filtering  effect  was  observed  in  InGaAs  based  superlattices. [14] More  recently,  SrTiO 3 based 2D structures also exhibited an interesting low-dimensional effect. [5, 6] As recent technical advances  in  synthesizing  oxide  heterostructures  provide  an  unprecedented  opportunity  for realizing various low dimensional structures with the atomic precision, we can use such structures as a test bed for enhancing the thermoelectric properties.

In  order  to  develop  highly  efficient,  low  dimensional  TMO  thermoelectrics,  we  focus  on  the strongly  correlated  2D  perovskite  oxide  materials.  In  particular,  previous  studies  found  the interface between the Mott insulator LaTiO  (LTO) and the band insulator SrTiO  (STO) bears a 3 3 two-dimensional electron gas (2DEG). The 2D system exhibited intriguing transport and optical

properties including electronic reconstruction, [15, 16] anomalous T -dependent metallic behavior, [17] multi-carrier/multi-channel conduction, [18-20] 2D superconductivity and quantum critical behavior. [21-23] More  interestingly,  it  has  been  recently  shown  that  the  carrier  density  could  be effectively controlled by a selective band filling through controlled doping of the 2DEG layer. [20]

In  this paper,  we  present  carrier-density-tuned  2D  thermoelectric  phenomena  for  a  direct comparison with the 3D case for a wide range of carrier densities. As shown in Fig. 1, this could be  achieved  by  fabricating  fractional  superlattices  (SLs)  using  pulsed  laser  epitaxy  (PLE).  We carefully  modified  the  carrier  concentration  in  the  LSTO  ( δ -doped)  layer  by  incorporating different  concentrations  of  La 3+ ions  within  the  layer.  Using  the  deliberate  crystal  design,  we could achieve a precise control on the carrier density ( n ) of LSTO as was previously achieved in the 3D case. [24] Furthermore, we observed a large enhancement of | S | due to the 2D confinement effect,  for  the  same n ,  without  sacrificing  much  of  the  electron  mobility  in  TMO  SLs.  The enhancement of | S |  resulted in a 300% enhancement in power factor for a moderate value of n , suggesting that the low dimensional effect together with the controllability of n is  an  important factor to be considered in oxide thermoelectric materials.

Fractional δ -doping method was used to fabricate [(La Sr x 1x TiO3) /(SrTiO ) 1 3 10 ] 10 (LSTO/STO, x = 0.25, 0.50, 0.75, and 1.00) SLs. Note that the SLs were adopted to amplify the effect from each 2DEG layer. The number of 2DEG layers in each sample was fixed to 10. Details on the PLEbased controlled δ -doping method can be found elsewhere. [20] To measure the transport properties of the SLs, we made a direct Ohmic contact with indium to the metallic 2D LSTO layers in the van der Pauw geometry using ultrasonic soldering. Temperature- ( T -) dependent S was measured by conventional steady-state  method (Δ T ~2  K)  using  a  cryogenic  refrigerator.  Other  transport

properties were characterized using a physical property measurement system (Quantum Design Inc.).

The transport properties of the SLs are shown in Fig. 2 as a function of x . The value of S at room T was extracted from linear fitting of the Δ V -Δ T curves as shown in the lower left inset of Fig. 2a. For all the samples, S revealed a negative value indicating n -type conduction. The values of | S | were comparable to those reported from Nb:STO/STO  SLs. [5, 6] With increasing La 3+ incorporation  within  the δ -doped  layer  ( x ),  | S |  gradually  decreased.  The T -dependent S curves shown in the upper right inset indicate that | S | decreases with decreasing T . In slightly doped bulk LSTO (  ≤ 0.1), x T 2 -dependence was observed for | S |-T curves which could be later attributed to the enhancement of the electron-phonon coupling with the decrease in n . [25] For our SLs, however, we could not observe any characteristic T -dependent behavior (other  than  the  typical  linear T -dependence observed for diffusion thermoelectricity) that could be attributed to unconventional physical  mechanism.  The  room T carrier  density  ( n ) and  mobility  ( μ ) values  of  the  SLs (corresponding to the 2D layers) are shown in Fig. 2b. Here, n is normalized by the nominal total thickness of the 2D layers as discussed below. The linear increase of n with x is clearly observed as expected, while μ does not show any considerable x -dependence.

Conventionally, the ZT value is calculated based on bulk (3D) σ , and thus, an effective thickness of the 2D layer is required to calculate n in cm -3 . In this way, the thermoelectric properties of low dimensional  materials  could  be  properly  understood.  While  it  is  practically  impossible  to experimentally  obtain  the  exact  thickness  of  the  2D  layer  in  LSTO/STO  SLs, [5,  6] one  may consider  the  well-studied  transport  property  of  the  SLs  in  order  to  estimate  the  thickness. LTO/STO and LSTO/STO interfacial systems at low T (&lt; ~50K) have to be understood in terms

of  multi-carrier  or  multi-channel  transport. [18-20] According  to  magnetic  field  dependent  Hall resistance measurements, the so-called 'low-density-high-mobility carriers' located in STO, i.e. , away from the interface, become active at low T . This is due to enhanced dielectric screening of carriers assisted by the largely enhanced dielectric constant of STO especially at low T . [26] On the other hand, at room T , 'high-density-low-mobility carriers' located at the interface (or the LSTO layer) play a dominant role in the transport property. The dielectric constant of STO is an order of magnitude  smaller  at  room T than  that  at  low T ,  suggesting  a  minimized  spill-over  effect  of conduction  electrons  into  the  STO  sides.  In  addition,  oxygen  vacancies  have  been  carefully removed  throughout  the  SLs,  and  we  believe  that  the  STO  spacing  layers  remain  insulating. Therefore, to understand the room T carrier  dynamics of the δ -doped SLs, we have considered only  the  high-density-low-mobility  carriers  confined  at  the  LSTO  layer,  with  the  nominal thickness of 1 u.c. (~4 Å).

The linear dependence of n with x was observed in 3D LSTO, [24, 25] where each La 3+ ion ideally adds one electron to the system by modifying Ti 4+ ( d 0 ) into Ti 3+ ( d 1 ) (0 &lt; x ≤ 0.95). Note that if all Sr 2+ ions are substituted by La 3+ (LaTiO ), the bulk sample becomes a Mott insulator, although 3 one would expect 1.68×10 22 cm -3 of  carrier density from simple reasoning. For the 2D δ -doped layer, such trend in bulk, i.e. ,  linear increase of n with x ,  was similarly observed. However, the SL does not become insulating even in the case of x = 1, possibly due to the smearing out of a small number of carriers even at room T . The measured n of our LTO/STO SL (corresponding to the 2D layers) is 8.1×10 21 cm -3 ,  suggesting that only half of the electrons compared to the bulk contribute to the actual conduction in 2D. Note that such decrease in n can also be attributed to the surface/interface depletion of the carriers. [27]

The  decrease  in x (or n )  yields  an  increase  in  | S | in  2D.  This  behavior  coincides  with  the phenomenological behavior for 3D thermoelectric materials, suggesting that this phenomenological model can be universally applied for the lower dimensional cases as well. Note that such a direct comparison study could only be realized due to the fabrication of fractional SLs. For x = 0.25 SL, | S | increased up to 408 μ V K -1 , which is ~2.5 times larger compared to x = 1.00 SL, indicating that tuning n in 2D system is an effective method to enhance the | S | value.

For more detailed analyses, we directly compared the transport property of LSTO for 3D and 2D (filled blue circles) cases, as summarized in Fig. 3 and Fig. 4. The data for 3D bulk LSTO (empty squares) for systematic n values is taken from a previous study by Okuda et al . [25] First, we note that the electrical conductivity is rather lower in our SLs than that in the bulk LSTO (Fig. 3a) for the  same n .  This  is  mainly  due  to  the  reduced μ which  could  be  attributed  to  the  reduced dimensional or confinement effect. On the other hand, μ has a completely different tendency for bulk and SL samples, as shown in Fig. 3b. For the 3D case, the decrease of μ with decreasing n was observed and attributed to the tendency of localization of the carriers, possibly due to the enhanced electron-phonon coupling at lower n as previously discussed. [25] Similar decrease in μ with decreasing n at room T has also been observed in another study on La doped STO bulk. [28] Note that the values of μ at room T were similar for other electron dopants in STO such as Nb or oxygen vacancies, [5, 6] although the decreasing trend with decreasing n was less evident. [29] In our 2D LSTO case, however, we did not find any distinct n -dependent behavior, which suggests that such an n -dependent localization effect does not prevail for a very wide range of n . Nevertheless, the dimensional confinement induced localization seems to affect the carrier transport for all the SLs. Indeed, even scattering with La 3+ ions does not seem to play a large role at room T , as μ is almost constant and independent of n (or x ). This might be attributed to the fact that for a δ -doped

layer, electron-phonon coupling does not depend on n anymore, due to the atomic confinement of 2D carriers. [10]

The most important observation regarding the thermoelectric effect in the 2D oxide SLs is the enhancement of | S | due to the reduced dimensionality. We first note that the qualitative trend, i.e. , the increase  of  | S | with  the  decrease  of n , is the  same  for  both  3D  and  2D.  While  a phenomenological  trend  has  been  also  observed  in  heavily  Nb-doped  STO, [2] our  direct  and deliberate  control  of n through  fractional  layer  structuring  reported  here  for  the  first  time  can open a door to novel TMO thermoelectric heterostructures.

More interestingly, | S |  of  our  SLs  is  much  larger  than  that  of  the  bulk  samples  for  the  same n values (Fig. 4a). In particular, more persistent | S |  is  observed as the n is  increased over a  wide range,  as  compared  to  the  bulk  samples.  To  estimate  the  enhancement  by  the  dimensional crossover over a wide range of n (which was not accessible in bulk), we adopted the curve (grey line), which was used to theoretically explain the n -dependence of | S |  in heavily Nb-doped STO bulk. [2] Note  that  this  curve  was  a  modification  of  the  Jonker  relationship  and  explains  the  3D data  by  Okuda et  al .  quite  well  especially  for  low n . [30] Based  on  this  estimation  of  | S |  in  3D, S 2D / S 3D was calculated (empty diamond symbols in red). S 2D / S 3D shows a drastic increase for x = 0.50 compared to x = 0.25 SLs. Above x = 0.50, it more or less saturates. However, it should be noted  that  the  estimation  of  | S |  in  3D  overestimates  the  last  few  data  points  by  Okuda et  al. , suggesting that S 2D / S 3D can be even much larger than what shown here, for higher n values ( x = 0.75  and  1.00  SLs).  In  addition  to  the  orbital  degeneracy  of  the  Ti  3 d t -2 g band  and  strong correlation attributed to the large | S | in oxide single crystals, the reduced dimensionality enforces disproportionate (anisotropic) band structure, which further enhances | S |. The structural

anisotropy  becomes  larger  as n increases,  which  should  most  probably  lead  to  an  increased anisotropy  of  the  carrier  transport  ( e.g. , the in-plane  conductivity  linearly  increases  with increasing x ,  while  there  is  no  linear  relationship  for  the  out-of-plane  conductivity), [18] and  the deviation  of  the  | S |  values  between  2D  and  3D  also  increases  with  increasing n .  Such  a  large enhancement of | S |  for large n values increases the PF of the SLs substantially as shown in Fig. 4b. Compared to the largest value for 3D LSTO (35 μ Wcm -1 K -2 ), the PF value corresponding to the  2D  layers  reaches  up  to  117 μ Wcm -1 K -2 for x =  0.75  SL,  which  is  more  than  a  300% enhancement over the values reported from the bulk samples. Moreover, this PF value is larger than that  for  most  of  the  oxide  heterostructures  reported  up  to  date  (shown  in  triangles  in  Fig. 4b), [8,  28,  31-33] which  can  be  mostly  explained  by  3D  thermoelectric  calculations, [2] especially  at high n . This is mainly due to the 2D confinement effect together with a wide n control. We again emphasize that such a large PF value could be achieved uniquely through systematic fabrication of δ -doped SLs with controlled doping. Finally, since the thermal conductivity of the 2D layer could not be measured, we estimated it from the bulk value of 10 W K -1 m -1 at room T , [2, 25] and obtained ZT values corresponding to the 2D layers ranging from 0.08 ( x = 0.25) to 0.35 ( x = 0.75).

In summary, we have shown that a highly efficient thermoelectric material can be designed by superlattice approach, in which the delicate balance between carrier density and thermopower is controlled by fractional control of 2D carriers. The general trend in the thermoelectric property of 3D transition metal oxides is still valid for the 2D SLs, and the maximum S value can be achieved when n is at the lowest limit of conduction. However, | S | clearly increases in 2D compared to 3D, and one can achieve much larger PF values with 2D superlattices. The results demonstrated here indicate that modifying the dimension of carrier conduction is a way to tuning the thermoelectric properties of oxide materials beyond what the bulk counterpart can perform.

## Acknowledgements

We appreciate valuable discussion with J. H. Han and V. R. Cooper. This work was supported by the  U.S.  Department  of  Energy,  Basic  Energy  Sciences,  Materials  Sciences  and  Engineering Division. WSC was supported by Samsung Research Fund, Sungkyunkwan University, 2013. HO is supported by JSPS-KAKENHI (25246023, 25106007).

## Figure legends

Figure 1 | Schematics of fractionally-doped transition metal oxide superlattices. [(La Sr x 1x TiO3) /(SrTiO ) 1 3 10 ] 10 superlattice  samples  with  controlled  chemical  compositions  have  been fabricated to detail the carrier conduction for controlling thermopower. As the portion of La in the 2DEG  layer  increases,  both  2D  carrier  density  and  conductivity  also  increase,  while  2D thermopower decreases.

Figure 2 | Transport properties of fractional superlattices. a , S as a function of x . As x decreases, | S | increases,  reaching  over  400 μ V  K -1 for x =  0.25.  The  lower  left  inset  shows  the  potential difference as a function of T gradient at 300 K. The upper right inset shows the T -dependence of | S |,  which  increases  with  increasing T . b , n and μ as  a  function  of x at  300  K. n has  been normalized to the total effective thickness of the 2D layers. n is linearly proportional to x , while μ does not exhibit any systematic change.

Figure  3  | Electronic  transport  behaviors  of  2D  and  3D  thermoelectric  oxides. a , σ and b , μ as  a function  of n for  bulk  samples  (empty  squares)  and  fractional  SLs  (filled  blue  circles).  The reduced σ is mainly due to the reduced μ .

Figure  4  | Thermoelectric  properties  of  2D  and  3D  thermoelectric  oxides. a , S and b , PF as  a function  of n for  bulk  samples  (empty  squares)  and  fractional  SLs  (filled  circles).  While  the general n -dependence is maintained, the fractional superlattices show highly enhanced thermoelectric  properties,  mainly  due  to  the  increased  anisotropy.  The  thick  grey  line  in a represents results from a theoretical calculation of the 3D data based on Jonker relationship. [2, 30] Right red axis in a is  data  for S 2D / S 3D ,  which  are  represented  with  the  empty diamonds in red.

Various PF values  for  bulk  (green  triangles), [28] film  (orange  and  cyan  triangles), [31,  32] and superlattices (purple triangles) [8] are  shown for comparison in b .  The  thick  grey  line  represents data from a theoretical calculation for 3D. [2]

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![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0449v1-figure-56848ead-5959-4f7d-91a1-271fa374f906.jpg)

Figure 1. Choi et al.

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Figure 2. Choi et al.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0449v1-figure-7926b0fd-b83f-43f6-a6f3-980749d85038.jpg)

Figure 3. Choi et al.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0449v1-figure-21a5e7e3-9126-435f-90a0-13832c72ab3d.jpg)

Figure 4. Choi et al.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0449v1-figure-ae78b98b-7c65-4fbe-8fe5-a1500a4b5525.jpg)
Woo Seok Choi Hiromichi Ohta Ho Nyung Lee
Thermopower enhancement by fractional layer control in 2D oxide superlattices
We have investigated two-dimensional thermoelectric properties in transition
metal oxide heterostructures. In particular, we adopted an unprecedented
approach to direct tuning of the 2D carrier density using fractionally
{\delta}-doped oxide superlattices. By artificially controlling the carrier
density in the 2D electron gas that emerges at a LaxSr1-xTiO3 {\delta}-doped
layer, we demonstrate that a thermopower as large as 408 {\mu}V K-1 can be
reached. This approach also yielded a power factor of the 2D carriers 117
{\mu}Wcm-1K-2, which is one of the largest reported values from transition
metal oxide based materials. The promising result can be attributed to the
anisotropic band structure in the 2D system, indicating that {\delta}-doped
oxide superlattices can be a good candidate for advanced thermoelectrics.