## Exfoliating pristine black phosphorus down to the monolayer: photo-oxidation and quantum confinement

Alexandre Favron , Etienne Gaufrès , Fréderic Fossard , Pierre L. Lévesque , Anne-Laurence 1 2 3 2 Phaneuf-L'Heureux , Nathalie Y-W. Tang , Annick Loiseau , Richard Leonelli , Sébastien 4 2 3 1 Francoeur  and Richard Martel * 4 2

1 Regroupement Québécois sur les Matériaux de Pointe (RQMP) and Département de physique,

Université de Montréal, Montréal QC H3C 3J7, Canada

2 RQMP and Département de chimie, Université de Montréal, Montréal QC H3C 3J7, Canada

3 Laboratoire d'Etude des Microstructures, UMR 104 CNRS-Onera, Châtillon, France

4 RQMP and Département de génie physique, Polytechnique Montréal, Montréal QC H3C 3A7, Canada

*Correspondence to: r.martel@umontreal.ca

Thin  layers  of  black  phosphorus  have  recently  raised  interest  for  their  two-dimensional (2D) semiconducting properties, such as tunable direct bandgap and high carrier mobilities. This  lamellar  crystal  of  P  atoms  stacked  together  by  weak  van  der  Waals  forces  can  be exfoliated down  to  the stratophosphane  monolayer  (also  called phosphorene)  using procedures similar to those used for graphene. Properties of this 2D material are however challenging to probe due to a fast and ubiquitous degradation upon exposure to ambient conditions. Herein,  we  investigate  the  crystal  degradation  using in-situ Raman  and transmission  electron  spectroscopies  and  highlight  a  process  involving  a  photo-induced oxidation reaction with adsorbed oxygen in water. The experimental conditions to prepare and preserve mono-, bi- and multilayers of stratophosphane in their pristine  states  were determined. Study on these 2D layers provides new insights on the effect of confinement on the chemical reactivity and the vibrational modes of black phosphorus.

## Introduction

Black Phosphorus (P(black)) stands out from the other allotropes of elemental phosphorus, such as the amorphous red phosphorus used to ignite matchsticks by friction and the notoriously  unstable  white  phosphorus  polymorph,  by  its  good  stability  up  to  550°C  and  its anisotropic lamellar structure similar to that of graphite 1,2 .    Composed of puckered layers of P

atoms stacked together by weak van der Waals forces, P(black) crystals can be exfoliated down to ultrathin layers using techniques similar to those used to prepare graphene from graphite and dichalcogenide monolayers from bulk crystals . Bulk P(black) is a direct bandgap semiconductor 3 (Eg=0.35 eV) showing intrinsic electron and hole mobilities at room temperature of 220 and 350 cm 2 V -1 s -1 , respectively 4-6 . Few  years  ago,  the  properties  of  exfoliated  P(black)  have  raised interest because of their potential use as anode materials in Lithium-ion batteries 7,8 . In the context of  two-dimensional  (2D)  materials  such  as  graphene  and  chalcogenides,  thickness-dependent carrier mobility in few layers transistors has been reported , giving impressive hole mobilities (up 9 to 1000 cm V 2 -1 s -1 ) and ON/OFF current ratios (up to ~10 ). Moreover, a significant blue shift of 5 the  bandgap energy with decreasing layer thickness was obtained by ab-initio calculations  and observed in preliminary luminescence results 10 .  Another  study  combining Raman spectroscopy and atomic force microscopy (AFM) of exfoliated P(black) by mechanical cleavage and plasma treatments has given Raman signatures and optical contrasts that can be used to determine the layer thickness 11 , albeit the signature of quantum confinement with the number of layers remains to be further clarified.

It appears then that exfoliated P(black) offers new and exciting prospects for applications in electronics and optoelectronics. However, Bridgman's first synthesis of P(black) dates back as far as 100 years ago and yet the literature on the topic is surprisingly sparse and commercial use of  the  material  is  inexistent,  which  acknowledges  major  difficulties  ahead  for  its  synthesis, processing  and  manipulation 12,7 . The  notoriously  poor  chemical  and  structural  stability  of elemental  phosphorus 13 raises  then  important  concerns  for  all  processing  steps  carried  out  in ambient  conditions.  Hence,  an  important  milestone  towards  the  establishment  of  phosphorusbased  electronics  is  the  better  understanding  of  the  chemical  and  physical  properties  of phosphorus thin layers.

Here, we present a systematic investigation of the chemical reactivity of exfoliated layers of  P(black)  with  oxygen  and  water  in  different  conditions  and  provide  guidelines  on  how  to prevent  oxidation  and  prepare  pristine  (oxygen  free)  materials  down  to  the  monolayer.  A thorough  spectroscopic  investigation  was  first  used  to  determine  the  origin  of  the  irreversible oxidation  of  thin  layers  of  P(black)  occurring  immediately  after  exfoliation.  The  experiments revealed a thickness dependent photo-activated charge transfer process with adsorbed oxygen in

water  under  ambient  conditions.  Control  over  this  ubiquitous  photo-oxidation  reaction  was achieved  and  provided  access  to  pristine  layers  for  further  studies  using  transmission  electron microscopy  (TEM),  Electron  Energy  Loss  (TEM-EELS)  and  polarized  Raman  spectroscopies. TEM images of mono-, bi- and multilayers  along  with  unambiguous  signatures  in  the  Raman spectra  of  electronic  confinement  effects  are  shown  and  discussed  using  group  symmetry analysis.

Because the monolayer is composed of tervalent phosphorus atoms, it belongs, according to the IUPAC nomenclature, to the phosphane group 14,15 .    Therefore, a monolayer of exfoliated P(black)  is  hereafter  designated  stratophosphane  (2D-phosphane),  as  opposed  to  the  name 'phosphorene'  used  in  previous  papers,  in  order  to  avoid  confusion  with  other  chemical derivatives of the materials and other elemental monolayers having sp - or sp -hybridization (e.g. 2 3 graphene, silicene, graphane, germanane, etc.).

Figure  1  presents  the  main  evidences  of  degradation  acquired  by  AFM  and  Raman spectroscopy  on  exfoliated  layers  produced  using  a  technique  derived  from  the  scotch-tape exfoliation technique 16 in order to quantify the morphology and structural changes, respectively. Layers  produced  by  direct  exfoliation  were  first  identified using  optical contrast in the microscope and imaged only few minutes after exfoliation in ambient conditions. A typical AFM image of a multilayer 2D-phosphane is shown in Figure 1a. The flake appears in AFM with a relative thickness of about 2.8 nm, as measured from the folded-back layer. Considering that the layer  thickness  of  a  2D-phosphane  monolayer  is  about  0.53  nm,  the  apparent  height  in  AFM indicates the presence of roughly five layers . Consistent with recent reports 2 13,17 ,  degradation is noted by the homogeneous distribution of small bumps or defects at the surface of the layer in AFM images taken shortly after exfoliation. These bumps appear to grow and then collapse from the top of the layer rather than from the edges. The signs of degradation become obvious in AFM (Figure 1b) or under the optical microscope after few days. A drastic transformation is observed along with new droplets distributed in the vicinity of the initial position of the flakes. Obviously, degradation  took  place  in  those  experimental  conditions.  Surprisingly,  it  was  noted  that degradation slowed down significantly when the samples was kept in the dark.

Figure  1  |  Photo-oxidation  of  thin  layers  of  2D-phosphane.  a-b, AFM  images  taken immediately  after  exfoliation  on  a  SiO2/Si  substrate  ( a )  and  after  a  few  days  under  ambient conditions ( b ). c, Raman spectra at λ = 532 nm measured in air 24, 48, 96 and 120 min after exfoliation. d, Time dependence of the integrated intensity of the A 2 g Raman mode in different conditions: Air, vacuum, mixture of O2 and H2O, and in air but with a 20 nm capping layer of parylene C. Curves were vertically shifted for clarity. e, Time evolution of the intensity of A 2 g mode for  different  laser  fluences  for  a  sample  immersed  in  an  aqueous  solution  in  air. Inset: Intensity decay time as a function of laser fluence. The dashed line shows a slope of minus one.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-c07c409c-e94f-494c-9a27-b52ca3d8bb3f.jpg)

Raman spectra of a 2D-phosphane multilayer are shown in Figures 1c at  24, 48, 96 and 120 minutes after exfoliation and continuous exposure to a fluence of 2x10  Wcm 4 -2 at  λ  =  532 nm. Using established vibrational modes of bulk P(black), the observed Raman modes centered at 361 cm -1 , 438 cm -1 and 466 cm -1 are assigned to Ag 1 , B2g and Ag 2 , respectively 6,18-20 .  As Raman scattering intensity is very sensitive to crystal quality, the quenching of the intensity within two hours  is  another  indication  of  a  fast  degradation  of  the  multilayer  2D-phosphane  under  light exposure.

An experiment was carried out in vacuum (&lt; 5 x10 -6 Torr) in order to verify if the mere presence  of  visible  light  suffices  to  induce  degradation.  To  minimize  the  influence  of  the hydrophilicity  of  the  Si/SiO2  substrate,  a  single  crystal  flake  of  multilayer  2D-phosphane  was mechanically exfoliated and transferred onto a SiO2/Si substrate coated with 20 nm of parylene C

21

. Raman spectra were recorded at room temperature as a function of time with and without gas exposure. No change in the Raman signal is observed for samples kept in vacuum (Figure 1d) or

exposed separately to oxygen and water (at a partial pressure of 400 and 13 Torr, respectively, which  is  comparable  to  their  partial  pressure  in  air,  Fig.  S7).  Experiments  in  vacuum  using  a higher flux of photons (up to 6 x10  Wcm 4 -2 ) also provided no evidence of degradation. The lightinduced degradation of the multilayer 2D-phosphane  is however instantly activated by introducing air or alternatively a mixture of pure oxygen and water vapor (Figure 1d). Moreover, the  integrated  Raman  intensity  as  a  function  of  time  indicates  that  degradation  in  air  is monoexponential, ~ e -t/τ ,  where t and τ represent the time and a decay time, respectively.  Note that different decay times are measured between experiments in air and in O2/H2O (5.5 and 36 min -1 , respectively) due to the different photon flux used (i.e. 1.7x10  Wcm 4 -2 and 1.8x10  Wcm 3 -2 , respectively).  Measurements  of  this  kinetics  in  a  buffer  solution  at  pH  between  5.8  and  7.8 indicated  no  dependency  with  pH.  Finally,  prolonged  exposures  to  O2,  H2O  and  then  a  mix O2/H2O were carried out in the dark and no degradation was noted, even after several hours (Fig. S7).  All  of  these  results  reveal  that  three  major  environmental  parameters  are  simultaneously required for the degradation of multilayer 2D-phosphane: water, oxygen and visible light.

Figure 2 | Chemical analysis by hyperspectral TEM-EELS spectroscopy of a multilayer 2Dphosphane. a High Angle Annular Dark Field (HAADF) contrast image taken at 80 kV. b-d

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-3df53751-1690-483b-bf71-8698c6ce4a5b.jpg)

EELS images extracted from the data cube at the energy of phosphorus L-2,3 edge (130.2 and 136 eV) and oxygen K-edge (534 eV). e EELS spectra corresponding to the selected areas in (a). Note that Pt 4 is acquired from another flake that is more oxidized, as described in Supplemental Information, Figure S10a.

Partially  degraded  samples  were  prepared  for  further  TEM  analysis  of  this  chemistry using  a  combination  of  High  Angle  Annular  Dark  Field  (TEM-HAADF)  and  hyperspectral electron energy loss spectroscopy (TEM-EELS) in imaging modes. HAADF contrast is directly linked  to  the  number  of  atoms  interacting  with  the  electron  beam,  thus  to  the  layer  thickness, while EELS provides a local chemical analysis of the sample using signals at 130.2 eV, 136 eV and  534  eV  that  can  be  attributed  to  the  presence  of  P,  PxOy,  and  O,  respectively  (see Supplementary). In Figure 2a, the HAADF image of the multilayer 2D-phosphane flake indicates regions with for instance ~ 7 (Pt1), and ~ 2-3 (Pt2 and Pt3) 2D-phosphane layers (Fig. S11). The EELS spectra in these regions and the intensity map of the entire flake are displayed in Figure 2e and  2b-d,  respectively.  Pt1  region  exhibits  weak  concentrations  of  oxygen  and  PxOy,  species comparatively  to  the  pristine  P  concentration.    On  the  contrary,  the  presence  of  a  significant amount of oxygen atoms preferentially localized in the thinnest regions of the flake is noted in Figure 2c. These regions are also characterized by the presence of pristine P and PxOy species (Figure 2d), indicating partial oxidation. Recorded on another flake (Fig S10), the spectrum Pt4 in  Figure  2e  clearly  demonstrates  that  the  signature  of  pristine  P  at  130.2  eV  can  completely vanish  at  the  cost  of  an  increase  of  the  P Oy  peak  loss,  indicating  a  complete  degradation  by x oxidation reaction. These experimental results demonstrate that thin layers of 2D-phosphane are oxidized and the extent of the oxidation is thickness dependent and faster for ultra-thin layers.

From  the  results  presented  in  Figures  1  and  2,  a  light-induced  oxidative  reaction mechanism can be sketched using the two main reaction steps involving the coverage, θ , of  a pristine and intrinsic 2D-phosphane:

$$\theta + h v \neq \theta ^ { * }, \quad & \text{Eq.1} \\ \theta ^ { * } + O _ { 2 ( a q ) } \rightarrow O _ { 2 ( a q ) } ^ { \dots - } + \theta \rightarrow \theta _ { o x }. \quad & \text{Eq.2}$$

In the first step, the optical excitation of the 2D-phosphane ground state produces a coverage of excited  2D-phosphane  ( θ * ),  whose  steady-state  population  depends  on  the  photon  flux,  the

recombination  rate  and  the  absorption  cross  section  (Eq.  1). θ * is  implicitly  assumed  here  to involve  precursors  of  free  electron-hole  pairs.  In  the  second  step  (Eq.  2),  the  excited  state  of population θ * undergoes  a  charge  transfer  reaction  toward  the  aqueous  oxygen  molecules adsorbed  at  the  surface  of  the  layer,  leading  to  p-doped  2D-phosphane.  Finally,  the  charge transfer reaction with the oxygen-water redox couple generates reactive intermediate species (i.e. strong  Brønsted  bases),  such  as  superoxide  anions,  that  react  spontaneously  with  the  surface atoms of  the  2D-phosphane  layer  and  etch  them  in  the  process  leading  to  oxidized  species  of coverage θ ox .

In  analogy  with  a  model  explaining  the  ubiquitous  air  doping  of  carbon  nanotubes  and graphene layers  deposited  on  an  SiO2  surfaces 22-24 ,  the  Marcus-Gerischer  theory 25 (MGT) was used  to  model  the  reaction  rate glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; , driven  by  the  charge  transfer  from  2D-phosphane  to oxygen/water, leading oxidation and etching (see supplementary for details and Fig. S12). This rate is given by:

$$\frac { d \theta } { d t } \in - \theta J _ { p h } [ O _ { 2 } ] \cdot e x p \left [ - \frac { \left ( \frac { | E _ { g, n } | } { 2 } + E _ { i } - E _ { F, r e d o x } ^ { 0 } + \lambda \right ) ^ { 2 } } { 4 k _ { B } T \lambda } \right ],$$

where 𝜃𝜃 is  the  coverage  of  pristine  2D-phosphane, 𝐽𝐽 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; is  the  laser  fluence,  [ O2 ]  is  the  oxygen concentration  in  water, 𝐸𝐸 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; is  the  intrinsic  Fermi  level, 𝐸𝐸 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; ,glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; is  the  thickness  dependent  bandgap energy for a n-layer 2D-phosphane, 𝐸𝐸 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; ,glyph&lt;c=4,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=3,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=5,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; is the energy level of the oxygen acceptor state, and 𝜆𝜆 is the renormalization energy of oxygen in water. This expression highlights the key role of the three main parameters on the reaction rate ([O2], 𝜃𝜃 and 𝐽𝐽 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; )  and of the exponential dependency with the overlap between the 2D-phosphane density of states and the energy levels of the oxygen acceptor states in water.

As  shown  in Figure 1e, this model  of the degradation process is tested using measurements  on  multilayer  2D-phosphane  immersed  in  water  (see  Fig.  S5)  by  recording  the Raman signal as a function of time for a laser fluence between 1.2 x10  and 6.4 x10  Wcm 4 4 -2 .  As expected, the results show that the higher the photon flux, the faster the reaction. Indeed, on a log-log scale, the decay time as a function of fluence shows an approximate slope of -1 (see inset Figure 1e).  Furthermore, the simple MGT explains the thickness dependence of the multilayer

2D-phosphane reactivity in terms of electronic confinement. When a thin sample is prepared, the bandgap shifts towards higher energies and closer to energy levels of the oxygen acceptor states, thereby  strongly  increasing  the  rate  of  charge  transfer  and  hence  the  oxidation  rate.  This  is especially true for the thinnest flakes, as observed in Figure 2.  Other experiments (not shown) determined  also  that  the  reaction  rate  is  independent  of  the  pH  of  the  solution  because  the reaction is driven by the 𝑂𝑂 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; /𝑂𝑂 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; ∙glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; as the P(black) is consumed before reaching equilibrium. MGT seems to fit quite well all of the observed behaviors and therefore proves that rigorous conditions are required in order to prepare thin layers of pristine (oxygen free) 2D-phosphane.

To prepare  pristine  layers,  we  devised  an  exfoliation  procedure  in  the  dark  or  inside  a nitrogen-filled  glove  box  in  order  to  remove  at  least  one  of  the  components  leading  to degradation.  The  2D-phosphane  samples  are  transferred  in  those  conditions  onto  a  300  nm SiO2/Si  substrate  and  the  thinnest  flakes  are  identified  in  the  glove  box  by  AFM  and  optical microscopy using a bandpass filter (λ &gt;580 nm) to provide a more accurate value of the optical contrast. Finally, samples were directly transferred from the glove box to a vacuum chamber and then  pumped  down  to  2.10 -6 Torr  for  Raman  experiments.  Another  strategy  for  experiemnts outside the glove box consists in coating the samples with a thin layer of a protecting insulator material. As an example in Figure 1d, 300 nm of parylene C is an excellent barrier against water adsorption and diffusion.

Figure 3 | HRTEM images at 200kV of 2D-phosphane layers viewed in the crystallographic projection along the c - axis ((110) zone axis corresponding to the edge-on view and slightly tilted (17°) top view) in ( a ) - ( b ) and along the b -axis ((201) zone axis) in ( c ) - ( d ):  HRTEM images are  shown  in  ( b )  and  ( d ).  Fast  Fourier  Transforms  of  the  white  dashed  areas  highlighted  in images ( b ) and ( d ) are shown in ( a ) and ( c ) respectively together with corresponding simulated images  of  the  structure  models  depicted  in  blue. e Evolution  of  the  number  of  2D-phosphane along the cross line in the inset extracted from the High Angle Annular Dark Field (HAADF) contrast image (inset) taken at the edge of a thin flake.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-2d1838e0-3600-497c-aa1b-26befe38285b.jpg)

Pristine  2D-phosphane  layers  were  prepared  in  dim  light  and  quickly  transferred  on  a TEM  grid  (see  Supplementary  Information)  for  structural  analysis.  Figure  3  presents  TEM images of mono-, bi- and multilayer 2D-phosphane, Fast Fourier Transforms (FFT) of selected areas, and image simulations of the layered structure projected along different orientations. The exfoliation  provided  micrographs  with  top  and  side  views.  The  puckered  structure  of  2Dphosphane is clearly revealed in Figure 3d, thanks to a fold in the layers that provides a view along  their b -axis.  The  structure  is  confirmed  by  both  the  analysis  of  the  FFT  pattern  of  the

selected area and the image simulation of the layered structure viewed along the  (201) zone axis. The same can be said for the mono- and multilayer 2D-phosphane in Figure 3b and viewed along the c -axis ((110) zone axis). From the image simulations shown in Figure 3a, the stacking of the layers  can  be  distinguished  and  monolayer  2D-phosphane identified.  Furthermore,  TEM-EELS core-loss analysis at the phosphorus K and L edges revealed that the sample essentially consists of  pure  phosphorus.  Scanning  TEM  High  Angle  Annular  Dark  Field  (STEM-HAADF,  Figure 3e), which intensity is proportional to the number of phosphorus planes, was used to determine the  thicknesses  and  the  structural  integrity  of  the  2D-phosphane  samples.  Overall,  these  TEM images demonstrate that pristine (with oxygen content of less than 1%) 2D-phosphane (composed of 𝑛𝑛 = 1 to 8 layers) can be readily produced when appropriate precautions are taken.

A large selection of samples produced in a glove box was characterized by AFM, optical contrast and Raman spectroscopy. As shown in Figure 4, the energy position and linewidth of Raman  modes  are  consistent  with  those  previously  reported  for  bulk  P(black) 18 .    However, significant  variations  are  observed  as  a  function  of  thickness,  from  the  bulk  ( 𝑛𝑛 = ∞ )  down  to monolayer 2D-phosphane ( 𝑛𝑛 = 1 ). The AFM image of this monolayer is shown in Fig. S6. The central frequencies of Ag 1 and B2g do not significantly shift, but a noticeable relatively symmetric broadening develops for 𝑛𝑛 ≤ 5 . Down to the bilayer, widths increased by 1.5 cm -1 with respect to the  bulk.  In  contrast,  the  behavior  of  Ag 2 is  both  qualitatively  and  quantitatively  different.  As shown in Figure 5b, the central frequency of the Ag 2 shifts  towards  higher  energies,  reaches  a maximum value for the bilayer (+2.6 cm -1 ),  and  then  red  shifts  such  that  the  frequency  of  the monolayer is only +2 cm -1 above that of the bulk. The full-width at half-maximum (FWHM) of Ag   follows  a  similar  non-monotonic  behavior.  As  shown  in  Figure  5a,  the  width  increases 2 continuously from the bulk value of 3.3 to 6.8 cm -1 for the bilayer, and it then drops to 5.3 cm -1 for the monolayer. These two non-monotonic dependencies strongly suggest the presence of more than one Raman allowed vibrational modes in the vicinity of Ag 2 .  This hypothesis is confirmed by the low-temperature bilayer spectra shown in the inset of Figure 4, where the presence of two modes can be unambiguously identified at 77 K.

Figure 4 | Raman spectroscopy of n-layer 2D-phosphane and bulk P(black). Raman spectra at λ = 532 nm on layers of different thicknesses. Spectra are normalized to the Ag 2 intensity and vertically shifted for clarity (scaling factor on right is only for the Si peak region near 520 cm -1 ). Inset : expanded view of the Ag 2 mode at 469 cm -1 of the bilayer 2D-phosphane at 300K and 77K.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-52de63a4-02ac-4636-b97d-db21885af864.jpg)

Figure 5 | Raman characteristics of the Ag 2 mode of n-layer 2D-phosphane as a function of AFM thickness, optical contrast and laser polarization. a and b, Evolution of the Ag 2 fullwidth-at-half-maximum  (FWHM)  (a)  and  of  the  spectral  position  (b)  as  a  function  of  optical contrast.  Open  blue  and  solid  red  circles  in  (a)  and  (b)  correspond  to  the  monolayer  2Dphosphane and bulk P(black), respectively. c, Polarization-resolved integrated Raman intensities of Ag 1 ,  B 2g and Ag 2 from the trilayer (optical contrast of 0.22). The flake was excited with the polarization corresponding to the Ag 2 intensity maximum.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-249af102-d681-40f0-8412-bce8412a65c9.jpg)

These Raman results can be understood on the basis of an analysis of the effect of the number  of  monolayers  on  the  symmetry  of  multilayer  2D-phosphane.  Bulk  P(black)  is orthorhombic (space group Cmce; no. 64) with the main crystallographic b axis  normal  to  the layers. The unit cell is composed of 8 P atoms, disposed in two layers, each containing 4 P atoms that are covalently bonded through p-orbitals to three neighbors 26 . Consistent with the results in Figure 1c and Figure 4, the D2h factor group symmetry of bulk P(black) predicts three out of a total of six Raman active modes for an excitation along the crystal b axis and perpendicular to the two  main  ( a and c) axes  of  the  2D-phosphane  plane.  The  preparation  of  thin  layers  of  2Dphosphane  breaks  the  translational  invariance  along b and  reduces  the  number  of  symmetry operations. For samples with an odd or even number of monolayers, the symmetry is Pmna and Pbcm,  respectively.  Irrespective  of  the  number  of  layers  involved,  the  factor  group  always remains D2h and, conveniently, the same 8 one-dimensional representations can be used to label all vibrational modes. The broadening of the modes observed in Figure 4 can be associated with the  Davydov  splitting  of  monolayer  vibrational  modes  and  the  appearance  of  new  Raman-

allowed modes 27,28 .  Both effects result from the larger number of phosphorus atoms composing the primitive cell of bilayers, trilayers, and other few-monolayer samples compared to that of the monolayer 2D-phosphane and bulk P(black) primitive cells, which both contain only four atoms. Accordingly, multilayers are characterized by 6𝑛𝑛 Raman modes, half of which can be observed for scattered light along  the b axis. Therefore,  singly  degenerate  bulk  modes  and  their corresponding monolayer modes are replaced, in few layers 2D-phosphane, by a number of neardegenerate  modes  corresponding  to  in-  and  out-of-phase  stacking  of  monolayer  vibrational motions 27 . Interestingly, some Raman modes of the multilayer are built from the combination of infrared  (IR)  modes  in  symmetrically  opposed  monolayers.  Therefore,  bulk  and  monolayer forbidden Raman modes can appear at energies close to that of bulk IR modes.

Davydov splitting requires at least 𝑛𝑛 = 3 , for which at least two Raman modes coexist in a narrow frequency range 27 .  It therefore does not explain the broadening observed for the bilayer. For  Ag 1 and  B2g,  this  broadening  is  weak  and  could  be  induced  by  various  effects,  from interactions  with  the  substrate  to  inhomogeneous  broadening  on  the  scale  of  the  diffractionlimited optical probe. For Ag 2 however, the degeneracy is clearly lifted, suggesting the presence of another mechanism. As described above, the presence of a second mode could be explained by combining  two  monolayer  IR  modes  of  B2u 1 representation  to  produce  a  Raman-allowed  Ag 2 mode. In the bulk, B2u 1 is found at 469 cm -1 , which is very close to that of Ag 2 at 470 cm -1 . This symmetry  analysis  also  predicts  that  all  these  near-generate  modes  should  be  absent  in  the monolayer because its primitive cell contains only 4 atoms. Indeed, we find that the width of Ag 2 of  the  monolayer  is  narrower  than  that  of  the  bi-  and  trilayer,  as  was  found  for  example  for MoS2 29 .

The shift of Ag 2 , a  vibrational mode associated to atomic movements in the plane of the monolayer,  bears  resemblance  to  the  hardening  of  E2g 1 in  MoS2  with  decreasing  thickness 29 . Interestingly,  the  positions  of  Ag 1 , assigned  to  atomic  displacements  perpendicular  to  the monolayer,  and  B2g  do  not  significantly  shift.  Compared  to  transition  metal  dichalcogenides, interlayer  interactions  and  their  effects  on  vibrational  energies  appear  to  be  qualitatively different. The frequency dependence of Raman modes is often used in 2D materials to reliably determine sample thickness with a monolayer precision. For 2D-phosphane, a similar procedure can be exploited, but only if Davydov-related effects highlighted above are properly taken into

account.  The  monotonic  dependence  of  intensity  ratios  on 𝑛𝑛 could  be  used  to  determine  the number of monolayers involved, but the analysis must also carefully consider crystal anisotropy 30 . As highlighted in Figure 5c, Raman intensities are very sensitive to polarization of the excited and scattered beam. These polarization responses were obtained from the trilayer 2Dphosphane and respect the expected polarization selection rule.

In conclusion, a photo-induced oxidation process of 2D-phosphane samples was identified and shown to involve oxygen species in water present in air at the surface of the layer. The rate of the  reaction  was  found  to  vary  with  the  layer  thickness,  with  the  oxygen  concentration  and linearly with the light intensity. The oxidation rate is also predicted to depend exponentially on the square of the energy gap of the layer. A procedure was devised to exfoliate black phosphorus while  preventing  degradation  in  ambient  conditions.  The  Raman  signatures  of  mono-,  bi-  and multilayer 2D-phosphane were obtained and several thickness-related effects were identified and discussed using symmetry arguments. This work paves the way to a systematic investigation of the electrical and optical properties of pristine 2D-phosphane down to the monolayer.

## Materials and Methods:

The black phosphorous  (99.998%) was bought from Smart Elements (Vienna, Austria). Polydimethylsiloxane  (PDMS)  stamps  were  made  using  the  PDMS  solutions  (Sylgard  184) bought  from  Dow  Corning.  Parylene  C 19 was  purchased  from  Cookson  Electronics  Specialty Coating Systems.

The 2D-phosphane layers were obtained by a modified scotch tape exfoliation technique 16 performed in a glove box under a clean nitrogen flow. First, the P(black) crystal is exfoliated onto a  flat  PDMS  and  then  transferred  onto  a  curved  PDMS.  The  2nd  PDMS  stamp  covered  with flakes is then rolled onto a 300 nm SiO2/Si substrate (depicted in Supplemental, Figure S1).

For the degradation study, the exfoliation was done in a relatively dark room, and keeping the  light  very  low,  the  flakes  were  characterized  by  optical  contrast  using  a  580  nm  low  pass filter, followed by Raman spectrometry. For measurements under water, the pH was adjusted to 5.8 using phosphate buffer and the flakes were kept under water with a homemade liquid cell that is  air  tight  for  Raman  measurements  (See  Supplemental  Figure  S5).  For  the  optical  contrast, AFM thickness and Raman correlation measurements, the degradation was avoided by placing an optical microscope and an atomic force microscope in a glove box and under continuous nitrogen

flow.  The  exfoliation  procedure  of  the  n-layer  2D-phosphane  and  their  AFM  and  optical characterizations were all performed in the same glove box. Sample transfers from the glove box to  a  cryostat  for  Raman  scattering  measurements  were  performed in-situ in  order  to  avoid  air exposure.  To  protect  thin  layers  of  2D-phosphane  during  Raman  characterization,  the  cryostat was continuously maintained at a pressure of &lt; 5.10 -6 Torr.

## ACKNOWLEDGEMENTS

The authors would like to acknowledge the assistance of Andreas Dietrich with early steps of sample preparation and characterization and discussions with Thomas Szkopek. The authors also  acknowledge  Patricia  Moraille,  from  the  Laboratoire  de  Caracterisation  des  Matériaux (LCM)  at  the  Université  de  Montreal  for  her  expertise  on  controlled  atmosphere  AFM measurements.  This work was possible because of financial support from the Natural Sciences and  Engineering  Research  Council  of  Canada  (NSERC),  the  Fonds  de  Recherche  du  QuébecNature  et  Technologie  (FRQNT),  and  the  Canada  Research  Chair  (CRC)  programmes.  The research  leading  to  these  results  has  also  received  partial  funding  from  the  European  Union Seventh Framework Program under grant agreement n°604391 Graphene Flagship.

## REFERENCES

- 1. Bridgeman, P. W. Two new modifications of Phosphorus. J. Am. Chem. Soc. , 36 , 1344-1363 (1914).
- 2. Hultgren, R. Gingrich, N. S. &amp; Warren, B. E. The atomic distribution in red and black phosphorus and the crystal structure of black phosphorus, J. of Chem. Phys . 3 , 351 (1935).
- 3. Reich, E. S. Phosphorene excites materials scientists, Nature 506 , 19 (2014).
- 4. Keyes, R. The electrical properties of black phosphorus. Phys. Rev. 92 , 580 (1953).
- 5. Warschauer, D. Electrical and optical properties of crystalline black phosphorus. J. Appl. Phys. 34 , 1853 (1963).
- 6. Appalakondaiah, S., Vaitheeswaran, G., Lèbegue, S., Christensen, N. E. &amp; Svane, A. Effect of van der Waals Interactions on the structural and elastic properties of black phosphorus. Phys. Rev. B 86 , 035105 (2012).
- 7. Park C.-M. &amp; Sohn, H.-J. Black phosphorus and its composite for lithium rechargeable batteries. Adv. Mat. 19 , 2465 (2007).
- 8. Sun, L.-Q., et al . Electrochemical activity of black phosphorus as an anode material for lithium-ion batteries . J. Phys. Chem C , 116, 14772 (2012).

- 9. Li, L., et al . Black phosphorus field-effect transistors. Nat. Nanotech . Published on line on March 2 nd (2014).
- 10. Liu, H., et al. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility. ACS Nano , online, DOI 10.1021/nn501226z. (2014)
- 11. Lu, W., et al. Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization. Nano Research , online ASAP, DOI 10.1007/s12274-014-0446-7  (2014).
- 12. Asahina H. and Morita A., Band structure and optical properties of black phosphorus. J. Phys. C: Solid State Phys . 17 1839-1852 (1984).
- 13. Koenig, S. P., Doganov, R. A., Schmidt, H., Castro Neto, A. H. &amp; Özyilmaz, B. Electric field effect in ultrathin black phosphorus. Appl. Phys. Lett . 104 , 103106 (2014).
- 14. IUPAC. Compendium of Chemical Terminology, 2nd ed. (the "Gold Book"). Compiled by A. D. McNaught and A. Wilkinson. Blackwell Scientific Publications , Oxford (1997). XML on-line corrected version: http://goldbook.iupac.org (2006-) created by M. Nic, J. Jirat, B. Kosata; updates compiled by A. Jenkins. ISBN 0-9678550-9-8.
- 15. Holleman, A.F., Wiberg, N., Inorganic Chemistry , Academic Press, ISBN: 0-12-352651-5 (2001).
- 16. Meitl, M.A., et al . Transfer printing by kinetic control of adhesion to an elastomeric stamp. Nature Mater . 5 , 33-38 (2006).
- 17. Castellanos-Gomez, A. et al., Isolation and characterization of few-layer black phosphorus, 2D Materials 1 , 025001 (2014).
- 18. Sugai, S. &amp; Shirotani, I. Raman and infrared reflection spectroscopy in black phosphorus. Sol. State Comm. 53 , 753 (1985).
- 19. Vanderborgh, C.A. &amp; Schiferl, D. Raman studies of black phosphorus from 0.25 to 7.7 GPa at 15K. Phys. Rev. B , 40 , 9595-9599, (1989).
- 20. Akahama, Y., Kobayashi, M. &amp; Kawamura, H. Raman study of black phosphorus up to 13 GPa. Solid State Commun . 104 , 311 (1997).
- 21. Sari, S. S. et al. Graphene field-effect transistors with parylene gate dielectric. Appl. Phys. Lett . 95 , 242104 (2009).
- 22. Aguirre, C. M. et al . The role of the oxygen/water redox couple in suppressing electron conduction in field-effect transistors. Adv. Mater . 21 , 3087-3091 (2009).
- 23. Levesque, P. L. et al . Probing charge transfer at surface using graphene transistors. Nano Lett . 11 , 132-137 (2011).
- 24. Brunel, D. et al . Control over the interface properties of carbon nanotube-based optoelectronic memory devices. Appl. Phys. Lett . 102, 1, (2013).

- 25. Memming R., Semiconductor electrochemistry , Wiley-VCH Weinheim  ISBN: 3-527-30147X (2001).
- 26. Du, Y., Ouyang, C., Shi, S. &amp; Lei, M. Ab initio studies on atomic and electronic structures of black phosphorus. J. Appl. Phys . 107 , 093718 (2010).
- 27. Tonndorf, P. et al . Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2. Opt. Express 21 , 4908 (2013).
- 28.  Terrones,  H. et  al. New  First  Order  Raman-active  modes  in  few  layered  transition  metal dichalcogenides. Sci. Rep . 4 , 4215 (2014).
- 29. Lee, C. et al. Anomalous lattice vibrations of single- and few-layer MoS2. ACS Nano , 4 , 2695 (2010).
- 30. Xia, F. Wang, H. &amp; Jia, Y. Rediscovering black phosphorus: A unique anisotropic 2D material for optoelectronics and electronics. arXiv :1402.0270 [cond-mat.mes-hall]

Supplementary file for

## Exfoliating pristine black phosphorus down to the monolayer: photo-oxidation and quantum confinement

Alexandre Favron , Etienne Gaufrès , Fréderic Fossard , Pierre L. Lévesque , Anne-Laurence 1 2 3 2 Phaneuf-L'Heureux , Nathalie. Y-W. Tang , Annick Loiseau  Richard Leonelli , Sébastien 4 2 3 1 Francoeur  and Richard Martel * 4 2

1 Regroupement québécois sur les matériaux de pointe (RQMP) and Département de physique, Université de Montréal, Montréal PQ H3C 3J7, Canada

2 RQMP and Département de chimie, Université de Montréal, Montréal PQ H3C 3J7, Canada

3

Laboratoire d'Etude des Microstructures, UMR 104 CNRS-Onera, Châtillon, France

4 RQMP and Département de génie physique, École Polytechnique de Montréal, Montréal PQ H3C 3A7, Canada

*Correspondence to: r.martel@umontreal.ca

## A. METHODS

## A1- Exfoliation of Black Phosphorous

Stratophosphane  (2D-phosphane)  mono-,  bi-  and  multilayers were  exfoliated from  black phosphorus (P(black)) using a technique derived from the scotch-tape exfoliation technique . The 1 modified exfoliation process involved two polydimethylsiloxane (PDMS) stamps, as depicted in Figure  S1.  The  first  PDMS  stamp  was  reticulated  in  a  petri  dish,  while  the  second  one  was reticulated in a cylindrical tube of 1 cm diameter. The exfoliation was done in a dark room or in a glove box under nitrogen flux.

Figure S1 | Three step exfoliation technique of P(black). Step 1: Exfoliation done on the flat PDMS-1. Step 2: The flakes were reported on semi-spherical PDMS-2 stamp. Step 3: the stamp was rolled on the substrate (300 nm SiO2 on a Si wafer) with an estimated speed of 0.1 cm/s.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-6ee8bf34-c3f6-42dd-903d-fbf471f0f063.jpg)

## A2- Optical contrast measurements of 2D-phosphane layers

The flakes were localized and characterized under an optical microscope (Olympus BX51) placed in a glove box using red light (glass colored optical filter 580 nm) to limit the photo-oxidation of the flakes. The optical contrast, Cred , was measured preferentially at the center of the image and using the following formula:

$$C _ { r e d } = \ \frac { R _ { s u b } - R _ { f l a k e } } { R _ { s u b } },$$

where Rsub and Rflake are the reflection signals on the substrate and flake respectively. Some examples of 2D-phosphane layers thus produced are presented in Figure S2.

Figure S2 | Examples of optical micrograph of the localization of flakes of 2D-phosphane multilayers using different optical contrasts.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-c73cccbd-db2f-46dd-8be3-1ab343e7c133.jpg)

## A3- Measurements of the layer thickness using atomic force microscopy (AFM)

The substrate used is a 300 nm SiO2 grown on a n ++ Si wafer that was previously patterned with metallic alignment marks (crosses done by photolithography). Short time before exfoliation, the substrate was annealed at 300°C for 3 hours and then quickly placed in a glove box equipped with  an  optical  microscope  fitted  with  a  glass  colored  optical  filter  580  nm  and  an  AFM instrument (Auto Probe CP, ThermoMicroscopes). The exfoliation procedure as well as optical and AFM characterizations of the exfoliated P(black) flakes were all done in the same glove box and under a continuous flow of nitrogen (i.e. without contact to the atmosphere). The thicknesses of the flakes was measured using intermittent imaging mode at 85% damping and using silicon cantilever probes for tapping mode (ACTA from AppNano, Si probes with Al coating, tip radius &lt; 10 nm, spring constant 25-75 N/m). The experimental procedure was done in the glove box to avoid  degradation  and  to  establish  a  correlation  between  the  optical  contrast  and  the  average thickness of different flakes. The results of many different 2D-phosphane layers are presented in Figure S3.

Figure | S3 Evolution of the optical contrast of flakes as a function of the thickness .  The thickness  of  many  2D-phosphane  thin  layers  with  their  different  optical  contrast  values  as measured by AFM and optical microscopy. The flakes are exfoliated in a glove box on 300 nm SiO2/Si substrates.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-bb938a07-47bb-45ff-9320-de8e15f1fe39.jpg)

## A4 - Photo-oxidation monitoring

A simple way to follow the progression of the photo-oxidation on the flakes was to compare a sequence of optical microscopic images at different exposure time to illumination in air. Several bumps appear after several minutes of exposition as shown in Fig. S4. AFM measurements in similar conditions also revealed the presence of bumps even before they can be seen in the optical microscope (See for instance Figure 1a in the main text)

Figure S4 | Optical microscopy images of a 2D-phosphane multilayer on a SiO2/Si wafer taken just after exfoliation (left) and a few hours in air with light exposure (right).

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-0f056a8c-7b96-4301-ad38-90d7c87959eb.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-db84c1f0-69cb-4361-b444-b658fdc59f12.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-eb99d311-57bc-4305-9d09-028b92268940.jpg)

To quantify  the  photo-oxidation,  we  followed  the  integrated  intensity  of  the  Raman  modes  of P(black) modes, which is directly related to the coverage of 2D-phosphane multilayers in their pristine  state.  Hence,  the  oxidation  of  the  surface  will  cause  the  Raman  modes  to  decrease  in intensity. The Raman spectrometer used is a custom built instrument with an excitation laser line at  532  nm  (Centenia  laser),  a  50X  objective  and  a  nitrogen  cooled  charged-coupled  device camera (JY Symphony). The spectral region probed was between 200-550 cm -1 with a precision of ± 0.2 cm -1 .

## Raman measurements on multilayer 2D-phosphane flakes for degradation experiments:

The sample stage was equipped with a cryostat (Janis ST500) coupled to a gas manifold and a pump.  The  vacuum  pressure  inside  the  cryostat  chamber  was  below  2  x  10 -5 Torr.  The  gases introduced in the chamber were oxygen (leak of ~0.5 Torr) and water vapor at partial pressures of 475 Torr and 13 Torr, respectively. The deionized water used in this experiment was previously deoxygenated using several freeze thaw cycles during pumping.

Raman measurements on samples immersed in water:

As shown in the Figure S5, the samples were placed in a buffer solution maintained at pH of 5.8 using  phosphoric  acid  and  sodium  hydroxide.  To  minimize  the  laser  path  length  through  the solution, a cover glass slide was placed close to the sample with a PDMS donut on top. The slide was isolated from the solution using a PDMS donut as shown in Figure S5.

Figure S5 | Scheme of the experimental setup for the Raman experiments of the 2Dphosphane multilayers in deionized water.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-99728b6e-971a-4754-8574-2b8d5cf4f450.jpg)

## A5 - Raman measurement of the monolayer 2D-phosphane

The figure S6a presents the AFM image of a monolayer 2D-phosphane. The small dimension of the  flake  prevented  measurement  of  optical  contrast  and  the  presence  of  a  multilayer  2Dphosphane  in contact with the monolayer  imposed  stringent conditions for the Raman measurements. The Figure S6b shows the position of the laser beam spot on the sample (532 nm, NA  0.55).  It  was  placed  carefully  on  the  upper  corner  of  the  monolayer  in  order  to  avoid contamination of the signal by the multilayers. The very small part of the monolayer under the beam spot implied a long acquisition time (20 min) at a fluence of 100 ∝ W. m -2 ∝ .

Figure S6 | Experiments on the monolayer 2D-phosphane. a: AFM image of a monolayer 2Dphosphane. b: Zoom of (a) and representation of the beam spot position on the monolayer 2Dphosphane for the Raman measurement in Figure 4, main text.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-4d53aaa3-67c5-4cbe-9cfd-ca92eae79e90.jpg)

## B. ADDITIONAL EXPERIMENTAL RESULTS

## B1 - Raman measurements

Figure  S7  |  Evolution  of  the  Ag 2 integrated  Raman  intensity  of  multilayer  2D-phosphane under different gas exposures. The laser illumination is at a wavelength of 532 nm light source of 200 ∝ W. m -2 ∝ intensity.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-d5e0d626-5ec4-4cab-a859-13caee02d45b.jpg)

Figure S8 | Evolution of the full width at half maximum (FWHM) of the Ag 1 ,  B 2g and Ag 2 Raman  modes  of  2D-phosphane  layers  of  different  thicknesses  as  a  function  of  optical contrast.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-b8af6491-b9c0-4838-bc00-5a6933795932.jpg)

## B2- Transmission electron microscopy (TEM) imaging and spectroscopies

## i) Microscope characteristics

TEM and high-angle annular dark-field (HAADF) images were recorded with a Libra 200 MC Zeiss operating at 200 kV and at 80 kV. The microscope is equipped with a monochromatized Schottky FEG source delivering an energy resolution down to 150 meV and a Gatan Ultrascan camera. Point resolution is 2.3 Å and information limit is 1.2 Å at 200kV. The TEM can operate in scanning mode (STEM) with a spatial resolution under 1 nm and is equipped with Bright Field (BF) and High Angular Dark Field (HADF) detectors. Finally the machine is equipped with an in-column energy filter making possible energy filtered TEM, EELS measurements in Scanning TEM mode and acquisition of spectrum imaging datacubes (or hyperspectral EELS).

## ii) Exfoliation of P(black) on the TEM grid

P(black)  exfoliation  was  done  using  PDMS  stamps  in  a  low-light  'dark'  room.  After  three exfoliation steps, the grid was delicately placed in contact with the PDMS stamp to transfer thin layers on the carbon thin film of the grid for TEM analysis.

## iii) Simulations of High Resolution TEM (HRTEM) images

Experimental HRTEM images of the 2D-phosphane layers were simulated using the JEMS software with the following TEM parameters:

|          | ZA [110]          | ZA [201]           |
|----------|-------------------|--------------------|
| α (mrad) | 0.1               | 0.1                |
| Δ f (nm) | Scherzer - 67 ± 5 | Scherzer - 500 ± 5 |
| HV (kV)  | 200               | 200                |
| C S (mm) | 1.2               | 1.2                |
| C C (mm) | 1.2               | 1.2                |
| Δ E (eV) | <0.7              | <0.7               |

## iv) EELS measurements

Figure S9 displays a core loss spectrum recorded at 80 kV on an almost pure sample used for TEM imaging in Figure 2. Assignments of the peaks are based on Refs (2) and (3). Phosphorous states are identified by inspecting the P-L2,3 edge. The main sharp P-L2,3 edge at 130.2 eV is the main signature of the P(black) structure. This peak is followed by a very weak peak at 136 eV assigned to an oxidized state corresponding to the P2O5 stoichiometry. Correlated with the peak at 136 eV, the spectrum displays a very weak peak at 534 eV corresponding to the K-O edge.

Figure S9 | Core loss spectrum recorded at 80 kV and an energy resolution of 0.8 eV on a multilayer 2D-phosphane sample at P-L2,3 and O - K edges.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-c1eed156-14b8-43bc-83d4-1d177b6d39c4.jpg)

Figure S10 | HAADF image (a) and core loss images at 136 eV (b) and 534 eV (c), recorded at  80  kV  with  an  energy  resolution  of  0.8  eV.  The  Pt  4  mark  in  (a)  corresponds  to  the location of the EELS spectrum displayed in Figure 2e of the main text.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-bac15095-f3e1-4a95-b805-bb1756c4db52.jpg)

Figure  S11  |  Evolution  of  the  number  of  2D-phosphane  layers  along  the  cross-section extracted from the High Angle Annular Dark Field (HAADF) contrast image (a) and used for the experiment in Figure 2 of the main text.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-4653ff8a-b27c-403e-9752-3fc61cc76a79.jpg)

## C. MARCUS-GERISCHER THEORY OF PHOTO-OXIDATION

We have developed a simple model based on Marcus-Gerischer theory (MGT) in order to better explain  the  photo-induced  oxidation  process  in  2D-phosphane  layers  and  its  dependency  with layer thickness.

## C1 - Charge transfer doping

Charge transfer between the 2D-phosphane layers and the environment is here assumed to take place  through  partial  reaction  steps  of  the  well-known  oxygen-water  redox  couple  that  is naturally present in air, in accordance with the following reaction:

$$O _ { 2 ( a q ) } + 4 e ^ { - } + 4 H ^ { + } \hookrightarrow 2 H _ { 2 } O.$$

It  was  previously  established  that  this  oxygen-water  redox  equilibrium  reaction,  which  is  pH dependent,  can  displace  the  Fermi  level  of  a  semiconductor,  such  as  graphene,  towards  the Nerstian potential of the aqueous (aq) solution of oxygen through direct charge transfer (CT). 4 This  reaction  is  driven  by  the  potential  difference  between  the  two  systems.  In  the  case  of P(black), the driving force is significant because the Nerstian potential of the redox reaction at pH  6  is  -5.3  V  (i.e.  -5.3  eV  potential  energy  relative  to  the  vacuum  level)  whereas  the workfunction of intrinsic P(back) is about 4.2 eV . In the case of graphene, which workfunction 5 is  about  4.5  eV,  CT  reaction  leads  to  p-doping  because  equilibrium  is  only  reached  when  the Fermi level equals that of the Nerstian potential of the solution - i.e. at ~-5.3 eV - because there is an infinite reservoir of oxygen in air (i.e. oxygen concentration is constant due to Henry's law). In the case of P(black), this charge transfer reaction appears however shortcut at an intermediate step by the local oxidation of P atoms (see main text), which reaction leads to etching rather than doping.

## C2 - Rate limiting step

For completion, the oxygen/water redox reaction above involves at least 4 intermediate steps (i.e. a  total  of  4  electrons  transferred)  and  each  step  presents  different  kinetics  and  intermediate species.  The  first  is  an  electron  transfer  from  P(black)  to  the  solvated  oxygen  acceptor  state according to:

$$O _ { 2 ( a q ) } + e ^ { - } \hookrightarrow O _ { 2 ( a q ) } ^ { - }.$$

Because  this  reaction  does  not  required  neither 𝐻𝐻 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; nor 𝑂𝑂𝐻𝐻 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; ,  it  is  pH  independent.  Also,  its reverse  direction  is  not  really  favored  since 𝑂𝑂 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; (glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt;glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; ) ∙glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; species  are  reactive  intermediates  against P(black). In the MGT framework, this CT step is expected to be very slow because aqueous O2 acceptor state is  located  at  about  -3.1  eV  relative  to  vacuum ,  which  is  well  above  that  of  the 6 P(black) band edges (See Figure S12). As a result of poor overlap, this CT step appears as the rate  limiting  step  for  the  oxidation  of  P(black)  in  air.  Two  experimental  facts  described  in  the main text support this hypothesis: 1) CT rate as determined by Raman is very slow in the dark; 2) the photo-oxidation reaction is found to be independent of the pH of the solution, at least in the range between 5.8 and 7.8.

## C3 - Reaction kinetics based on MGT

## i) General expression and considerations about energy levels

To  access  the  kinetics  of  the  photo-induced  CT  reaction,  we  use  the  MGT  describing  the interaction  of  the  solvent  (water)  with 𝑂𝑂 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; and 𝑂𝑂 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; (glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt;glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; ) ∙glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; .  Because of fast water rearrangements due the presence of the charge, the level fluctuates in energy over a range of ± 1 eV,  which is 7 expressed in the MGT using a total distribution (TD) function of the state that follows a Gaussian shape (See Figure S12). This CT rate is given by:

$$D _ { O _ { 2 } } ( E ) = [ 0 _ { 2 } ] \cdot b _ { o } e x p \left [ \frac { - \left ( E - E _ { F, r e d o x } ^ { 0 } + \lambda \right ) ^ { 2 } } { 4 k T \lambda } \right ],$$

where 𝑂𝑂 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; is the concentration of oxygen in water, 𝐸𝐸 is the potential energy (in eV), 𝐸𝐸 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; ,glyph&lt;c=4,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=3,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=5,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; is the  electrochemical  potential  energy  (or  Fermi  level  of  the  solution),  λ  is  the  reorganization energy,  and 𝑏𝑏 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; is  a  normalizing  parameter  such  that 𝐷𝐷 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; 𝐸𝐸 𝑑𝑑𝐸𝐸 = 𝑂𝑂glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; .  In  principle,  the  CT kinetics may be related to the overlap between the density of states of the n-layer 2D-phosphane and the solution, but the levels in the solution are not equivalent, in a conventional sense, to that a band.  That  is,  an  electron  cannot  be  transferred  to  aqueous  oxygen  through  a  simple  physical process,  such  as  band-to-band  tunneling,  because  molecular  rearrangements  are  taking  place during  the  course  of  the  reaction .  It  remains  however  possible,  energetically,  to  transfer  an 4 electron  from  P(black)  or  n-layers  2D-phosphane  with  excess  electrons  to  the  oxygen  state because the energy levels are close.

Because 𝐸𝐸 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; ,glyph&lt;c=4,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=3,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=5,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; =-4.1  eV  for 𝑂𝑂 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; / 𝑂𝑂 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; (glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt;glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; ) ∙glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; and  workfunction  of  P(back)  is  about  4.2  eV (bandgap, Eg=0.35 eV), it appears clear in Figure S12 that intrinsic (undoped) P(black) should be roughly  stable  in  normal  condition,  which  is  consistent  with  experimental  observations  of  a relatively good stability of the crystal in air, as reported by Bridgeman more than 100 years ago . 8

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0345v2-figure-db7bdc96-04ec-4030-9aaa-c58ec46fb487.jpg)

Figure | S12 Sketch of the densities of states (DOS) of aqueous oxygen acceptor and of nlayers  2D-phosphane,  as  predicted  by  the  Marcus-Gerisher  theory . On  the  left :  DOS  of mono-, bi-, tri- 2D-phosphane layers and bulk P(Black) extracted from Ref. 5 and 10. On the right :  the  energy  diagram  of  the  DOS  of  aqueous  oxygen  acceptor  from  Ref.  (4)  with  the enlargement  of  the  DOS  due  to  solvent  reorganization.  The  figure  also  illustrates  by  the  blue arrows the proposed CT reaction induced by photo-excitation of n-layer 2D-phosphane.

## ii) Detail on the kinetics of charge transfer to bulk P(black)

The kinetic for the oxidation of the P(black) can be described by the following set of reactions.

The overall reaction is:

$$\theta + O _ { 2 ( a q ) } + h \nu \rightarrow \theta _ { o x } \,. \quad ( S 3 )$$

S3 can be subdivided into the following mechanism:

$$\begin{array} { c } \text{uuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuuu
} } \\ \theta + h v \stackrel { k _ { 1 } } { \to } \theta ^ { * }, & \quad ( S 4 ) \\ \theta ^ { * } \stackrel { k _ { 2 } } { \to } \theta + \Gamma _ { x }, & \quad ( S 5 ) \\ \theta ^ { * } + O _ { 2 ( a q ) } \stackrel { k _ { 3 } } { \to } O _ { 2 ( a q ) } ^ { - } + \theta + h ^ { + }, & \quad ( S 6 ) \\ \quad & \quad O _ { 2 ( a q ) } ^ { - } + \theta + h ^ { + } \stackrel { k _ { 4 } } { \to } \theta _ { o x } \,. & \quad ( S 7 ) \\ \quad. \quad \, \omega \cdot \quad. \quad \omega \cdot \quad \omega \cdot \quad \omega \cdot \quad \omega ^ { * } \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \cdot \end{array}$$

$$( S 6 )$$

$$O _ { 2 ( a q ) } ^ { - } + \theta + h ^ { + } \stackrel { \ddot { \mu } _ { 4 } } { \to } \theta _ { o x } \,.$$

In these equations, 𝜃𝜃 is the coverage of pristine P(black); 𝜃𝜃 ∗ is the coverage of excited P(black) by light - note that 𝜃𝜃 ∗ is also linked to the carrier concentration of photo-generated electrons, 𝛿𝛿𝛿𝛿 , at  steady  state  because  of  the  formation  of  electron-hole  pairs; 𝜃𝜃 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; is  the  coverage  of  oxidized P(black) in the form of 𝑃𝑃𝑂𝑂 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; ; ℎ𝜈𝜈 is a photon count; Γglyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; regroups all decay channels leading to the relaxation  of  P(black)  excited  state  to  its  ground  state  (phonon  generation,  fluorescence,  etc.); 𝑘𝑘 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; , 𝑘𝑘 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; , 𝑘𝑘 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; , 𝑘𝑘 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; are the rate constants.

Reaction S4 describes the direct photoexcitation of P(black). In this equation, we consider that electron-hole pairs are produced from the excitation and their relaxation towards the CB edge is very  fast.  Thus,  carriers  are  generated  and  characterized  by  the  energy  of  the  band  edges. Reaction S5 represents all the decay channels, radiative or not, of P(black) excited states. Driven by the CT to aqueous O2, CT reaction S6 is responsible for the formation of the aqueous oxygen radial anion at the surface of P(black). This reaction is slow and assumed to be the limiting step with  a  rate  constant, 𝑘𝑘 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; .  As  detailed  below, 𝑘𝑘 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; can  be  readily  derived  by  the  MGT.  The  last reaction  S7  is  a  fast  oxidation  of  P(black)  by  the  oxygen  anion  oxidative  specie  or  related intermediates, leading to etching.

Note that additional reactions are required in order to complete the reduction of 𝑂𝑂 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; towards 𝐻𝐻 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; 𝑂𝑂 (i.e. a total of 4 electrons are involved in the complete water/oxygen redox reaction). However, our  experiments  indicate  a  high  reactivity  of 𝑂𝑂 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; (glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt;glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; ) ∙glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; intermediate  species  towards  P(black)  and thus any further electron transfer steps are neglected. To be noted, the reaction S6 and S7 are pdoping and de-doping processes of P(black), respectively. Thus, these steps overall lead to no doping  of  P(black).  Furthermore, 𝑂𝑂 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; (glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt;glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; ) ∙glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; species  can  attack  any  pristine  sites  on  the  P(black) surface because the positive charges in reaction S6 is delocalized in the P(black).

To simplify the reaction kinetics, we assume that S4 and S5 are characterized by extremely fast kinetics compared to the CT processes in S6 and S7. Thus, these reactions can be considered as static,  while  solving  S4  and  S5  for  the  photo-stationary  equilibrium  situation,  which  sets  the carrier population available for CT, as:

$$\frac { d \theta ^ { * } } { d t } = k _ { 1 } \theta \cdot h \nu - k _ { 2 } \cdot \theta ^ { * } = 0 \. \quad \text{(S8)}$$

This yields:

$$\theta ^ { * } = \frac { k _ { 1 } } { k _ { 2 } } \theta \cdot h \nu \,. \quad \text{ (S9)}$$

From  this  equation,  an  excess  of  electron  in  the  conduction  band  at  steady  state, 𝛿𝛿𝛿𝛿 ,  can  be obtained for CT, corresponding to a coverage 𝜃𝜃 ∗ . This excess is therefore directly proportional to the  photon  flux  and  surface  coverage 𝜃𝜃 .  The  concentration  of  thermally  generated  carriers  is neglected in the actual process, which is justified by the significant bandgap of the material (of more than 0.35 eV in n-layer 2D-phosphane). This is consistent with the good stability of our samples in ambient conditions when kept in the dark.

One can develop further S9 for a thin layer of P(black) to get: 𝛿𝛿𝛿𝛿 = 𝑔𝑔glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt;glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt;glyph&lt;c=3,font=/IFMIOK+CambriaMath&gt; 𝜏𝜏 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; = (𝐽𝐽 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; 𝐴𝐴𝜎𝜎 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=3,font=/IFMIOK+CambriaMath&gt; 𝜌𝜌 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; 𝑛𝑛  𝜃𝜃)  𝜏𝜏 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; , where 𝑔𝑔 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=3,font=/IFMIOK+CambriaMath&gt; is the  optical  generation,  corresponding  to 𝐽𝐽 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; 𝐴𝐴𝜎𝜎 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=3,font=/IFMIOK+CambriaMath&gt; 𝜌𝜌 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; 𝑛𝑛  𝜃𝜃 ,  and 𝜏𝜏 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; = glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; is the effective carrier lifetime (i.e. electron lifetime in the CB). In this expression, 𝐽𝐽 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; is the laser fluence, A the unit area, 𝜎𝜎 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=3,font=/IFMIOK+CambriaMath&gt; is the absorption cross-section, 𝜌𝜌 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; is the phosphorus surface density, 𝑛𝑛 is the number of layer.

In the presence of the aqueous oxygen condensed at the surface of P(black), the electron transfers from the CB edge to the oxygen acceptor state of the solution proceeds according to reaction S6. This  process  generates  aqueous  superoxide  anions, 𝑂𝑂 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; (glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt;glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; ) ∙glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; ,  that  react  spontaneously  with  the surface atoms of the 2D-phosphane layer and etch them in the process. We can then assume that the oxidation reaction will be mainly limited by the S6 reaction step.

In the MGT framework, the electron transfer rate between the conduction band of P(black) and the acceptor states of the solution, described by S6 , is explicitly given by:

$$\frac { d O _ { 2 ( a q ) } ^ { - } } { d t } = \int _ { - \infty } ^ { \infty } b _ { i } \theta ^ { * } ( 1 - f ( E ) ) D _ { O _ { 2 } } ( E ) d E. \quad ( S 1 0 )$$

Where 𝐷𝐷 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; is given by S2, 𝑏𝑏 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; regroups several prefactors related to the geometry of the molecular system and f(E) is the Fermi-Dirac distribution. Assuming now that all electrons are distributed at the minimum of the CB of a n-layer 2D-phosphane, 𝐸𝐸 glyph&lt;c=1,font=/HXCCAM+CambriaMath&gt; ,glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; ,  by  a  Dirac  delta  function,  we  obtain after integrating:

$$\frac { d O _ { 2 ( a q ) } ^ { ; - } } { d t } = b _ { i } \theta ^ { * } D _ { O _ { 2 } } \Big ( E _ { c, n } \Big ) \,, \quad ( S 1 1 )$$

or more explicitly using 𝛿𝛿𝛿𝛿 = 𝜃𝜃 ∗ and equation S2:

$$\frac { d O _ { 2 ( a q ) } ^ { \cdot - } } { d t } = \, b _ { i } b _ { o } [ O _ { 2 } ] \, \delta \eta \, e x p \left [ - \frac { ( E _ { c, n } - E _ { F, r e d o x } ^ { 0 } + \lambda ) ^ { 2 } } { 4 k T \lambda } \right ]. \quad ( S 1 2 )$$

Because the rate equation for reaction S6 is: glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt;( glyph&lt;c=1,font=/HXCCAM+CambriaMath&gt;glyph&lt;c=2,font=/HXCCAM+CambriaMath&gt; ) ∙ glyph&lt;c=1,font=/HXCCAM+CambriaMath&gt; glyph&lt;c=1,font=/HXCCAM+CambriaMath&gt; glyph&lt;c=2,font=/HXCCAM+CambriaMath&gt; = 𝑘𝑘 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; 𝜃𝜃 ∗ 𝑂𝑂 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; , the reaction constant k3 therefore become:

$$k _ { 3 } = b _ { i } b _ { o } e x p \left [ - \frac { \left ( E _ { c, n } - E _ { F, r e d o x } ^ { 0 } + \lambda \right ) ^ { 2 } } { 4 k _ { B } T \lambda } \right ]. \quad \quad ( S 1 3 )$$

Last,  we  can  also  write  Equation  S12  by  taking  into  account  that glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt;( glyph&lt;c=1,font=/HXCCAM+CambriaMath&gt;glyph&lt;c=2,font=/HXCCAM+CambriaMath&gt; ) ∙ glyph&lt;c=1,font=/HXCCAM+CambriaMath&gt; glyph&lt;c=1,font=/HXCCAM+CambriaMath&gt; glyph&lt;c=2,font=/HXCCAM+CambriaMath&gt; = glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/HXCCAM+CambriaMath&gt;glyph&lt;c=2,font=/HXCCAM+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; = -glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; glyph&lt;c=2,font=/IFMIOK+CambriaMath&gt; .  By renaming the  variable 𝑏𝑏 ≡ 𝑏𝑏 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; 𝑏𝑏 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; ,  the  oxidation  rate  can  be  formulated  by  the  following  kinetic equation:

$$\frac { d \theta } { d t } = - b \delta \eta \, [ O _ { 2 } ] e x p \left [ - \frac { \left ( E _ { c, n } - E _ { F, r e d o x } ^ { 0 } + \lambda \right ) ^ { 2 } } { 4 k _ { B } T \lambda } \right ].$$

The above expression can also be rewritten in terms of the energy gap of a n-layer 2D-phosphane, 𝐸𝐸 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; ,glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; ,  assuming  an  intrinsic  Fermi  level, 𝐸𝐸 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; , i.e. in  the  middle  of  the  gap.  With  the  definitions above, we can develop more explicitly the expression for the oxidation rate of the P(black):

$$\frac { d \theta } { d t } = - b ( A \sigma _ { a b s } \rho _ { A } \tau _ { n } n \, k _ { 0 } ) \, \theta J _ { p h } \, [ O _ { 2 } ] \cdot e x p \left [ - \frac { \left ( \frac { | E _ { g, n } | } { 2 } + E _ { i } - E _ { F, r e d o x } ^ { 0 } + \lambda \right ) ^ { 2 } } { 4 k _ { B } T \lambda } \right ]. \quad ( S 1 5 )$$

As discussed in the main text, the above expression describes well the observed behavior for the photo-oxidation  of  the  P(black)  and  of  n-layer  2D-phosphane.  That  is,  the  Raman  intensity  is

proportional to the coverage 𝜃𝜃 , which then decays exponentially with time. The oxidation rate is also directly proportional to the photon flux, the 𝑂𝑂 glyph&lt;c=1,font=/IFMIOK+CambriaMath&gt; concentration (or partial pressure) and more strikingly,  as  evidenced  by  TEM-EELS  results,  the  rate  is  fastest  for  the  thinnest  n-layer  2Dphosphane.

## C5 -On the consequences of electronic confinement on CT kinetics

The  situation  of  n layer  2D phosphane  is  different  than  for  bulk  P(black) --because  electronic confinement in  nlayer  2D phosphane  leads -to  an  enlargement  of  the  band  gap  energy 9,10 . According to MGT, larger bandgaps should indeed improve the energy level alignment between the  2D phosphane  conduction  band  and  the  solvated  oxygen  acceptor  state  (see  illustration  in -Figure  S12).  Hence,  MGT  predicts  faster  kinetics  for  electron  transfer  reaction  toward  the solution acceptor states (i.e. O2(aq)) with decreasing thickness of the layer. In other words, the rate of  transfer  from  the  conduction  band  increases exponentially  with  the  square  of  the  bandgap energy, as  indicated  in  Equation  S15 . Note  that  this  is  true  up  to  the maximum  level  of  the acceptor states, which is roughly  3.1eV. This situation is illustrated in Figure S12 by the relative -length of the arrows in blue .

For  intrinsic  2D phosphane  layers  kept  in  the  dark,  the  electron  population  in  the  conduction -band is rather limited at room temperature and mainly given by the intrinsic carrier concentration. This population decreases with increasing bandgap. This explains the relatively good stability of thin 2D phosphane layers in the dark in ambient condition. As discussed in the main text, n layer --2Dphosphane  exposure  to  light will  generate  a  significant  carrier  population  that  is  photo -generated by the process. The electrons and holes accumulate at the conduction and valence band edges and become available for transfer to the aqueous oxygen acceptor states .

## REFERENCES

- et al . Transfer printing by kinetic control of adhesion to an elastomeric stamp.

1.  Meitl, M.A., Nature Mater . 5 , 33-38 (2006)

- 2. Wagner, C.D. et al. NIST, Standard Reference Database 20, Version 3.4 (http:/srdata.nist.gov/xps/) (2003)
- 3. Moulder, J.F., Stickle, W.F., Sobol, P.E., Bomben, K.D., Handbook of X-ray Photoelectron Spectroscopy, Perkin-Elmer Corp., Eden Prairie, MN, (1992)
- 4. Memming R., Semiconductor electrochemistry , Wiley-VCH Weinheim  ISBN: 3-527-30147-X (2001)
- 5. Goodman. N.B., Ley, L. &amp; Bullett, D., Valence-band structures of phosphorus allotropes W. Phy. Rev. B 27, 12 (1983)
- 6. Levesque, P. L. et al . Probing charge transfer at surface using graphene transistors. Nano Lett . 11 , 132-137 (2011).
- 7. Ignazak, A., Schickler, W. &amp; Bartensclager, S., J. Electroanal. Chem . 586 (2006)
- 8. Bridgeman, P. W. Two new modifications of Phosphorus. J. Am. Chem. Soc. , 36 , 1344-1363 (1914).
- 9. Liu, H., Neal, A. T., Zhu, Z., Luo, Z., Xu, X., Tomanek D. &amp; Ye, P. D. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility. ACS Nano , online, DOI 10.1021/nn501226z. (2014).
- 10. Zhang, S. et al., Extraordinary Photoluminescence and Strong Temperature/Angle-dependent Raman Responses in Few-layer Phosphorene, arXiv:1407.0502, 2014
A. Favron E. Gaufrès F. Fossard P. L. Lévesque A-L. Phaneuf-L'Heureux N. Y-W. Tang A. Loiseau R. Leonelli S. Francoeur R. Martel
Exfoliating pristine black phosphorus down to the monolayer: photo-oxidation and electronic confinement effects
Thin layers of black phosphorus have recently raised interest for their
two-dimensional (2D) semiconducting properties, such as tunable direct bandgap
and high carrier mobilities. This lamellar crystal of P atoms stacked together
by weak van der Waals forces can be exfoliated down to the stratophosphane
monolayer (also called phosphorene) using procedures similar to those used for
graphene. Properties of this 2D material are however challenging to probe due
to a fast and ubiquitous degradation upon exposure to ambient conditions.
Herein, we investigate the crystal degradation using in-situ Raman and
transmission electron spectroscopies and highlight a process involving a
photo-induced oxidation reaction with adsorbed oxygen in water. The
experimental conditions to prepare and preserve mono-, bi- and multilayers of
stratophosphane in their pristine states were determined. Study on these 2D
layers provides new insights on the effect of confinement on the chemical
reactivity and the vibrational modes of black phosphorus.