## Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors

## M. Delmas 1* , M. C. Debnath 2 , B. L. Liang , D. L. Huffaker 2 1,2

1 School of Physics and Astronomy, Cardiff University, The Parade, Cardiff CF243AA, UK

2 California NanoSystem Institute, University of California, Los Angeles, CA 90095, USA

## Abstract

This  work  investigates  midwave  infrared  Type-II  InAs/GaSb  superlattice  (SL)  grown  by molecular beam epitaxy on GaSb substrate. In order to compensate the natural tensile strain of the InAs layers, two different shutter sequences have been explored during the growth. The first one consists of growing an intentional InSb layer at both interfaces (namely GaSb-on-InAs and  InAs-on-GaSb  interfaces)  by  migration  enhanced  epitaxy  while  the  second  uses  the antimony-for-arsenic  exchange  to  promote  an  'InSb-like'  interface  at  the  GaSb-on-InAs interface. SLs obtained via both methods are compared in terms of structural, morphological and optical properties by means of high-resolution x-ray diffraction, atomic force microscopy and photoluminescence spectroscopy. By using the second method, we obtained a nearly straincompensated SL on GaSb with a full width at half maximum of 56 arcsec for the first-order SL satellite peak. Relatively smooth surface has been achieved with a root mean square value of about 0.19 nm on a 2 µm x 2 µm scan area. Finally, a p-i-n device structure having a cut-off wavelength of 5.15 µm at 77K has been demonstrated with a dark-current level of 8.3 x 10 -8 A/cm 2 at  -50 mV and a residual carrier concentration of 9.7 x 10 14 cm -3 ,  comparable to the state-of-the-art.

## Highlights:

- -  Two  shutter  sequences  during  the  MBE  growth  of  midwave  InAs/GaSb  SL  have  been investigated
- - The influence of the shutter sequence on the structural, morphological and optical properties has been studied
- - InAs/GaSb SL p-i-n photodiode with a dark-current level comparable to the state-of-the-art has been demonstrated

Keywords:  InAs/GaSb  superlattice;  MBE  growth;  shutter  sequence;  midwave  infrared; photodiode

* Corresponding author: Tel: +44 2922510182. e-mail address: DelmasM@Cardiff.ac.uk

## 1. Introduction

High performance photodetectors operating in the midwave (3 - 5 µm) and longwave (8 - 12 µm) infrared (IR) spectral domain are useful for a broad range of civil, industrial and spatial applications. Since the proposition made by Smith and Mailhiot [1], the Type-II InAs/GaSb superlattice (SL) material has been of great interest as it offers unique properties for infrared detection  including  a  high  absorption  coefficient,  low  dark-currents  and  the  possibility  to address a wide range of wavelengths by tuning the SL band edges [2].

The SL is usually grown by molecular beam epitaxy (MBE) which permits precise control of each layer thickness. One of the key challenges in SL growth is that the InAs binary has a smaller lattice parameter than GaSb (∆a/a ~ -0.6%) and that the SL layer is therefore naturally under tensile strain  on  GaSb  substrate.  To  achieve  high  quantum  efficiency  and  low  darkcurrent, it is crucial to develop growth methods that allow growing a thick SL layer with low defect and dislocation density. The control of both interfaces (IFs), namely the InAs-on-GaSb and GaSb-on-InAs IFs, is of significant importance to obtain a strain-compensated SL layer with high structural and optical quality. Depending on the shutter sequence during the growth, InSb bonds ('InSb-like' IF) or GaAs bonds ('GaAs-like' IF) can be formed. By introducing an 'InSb-like' IF, the tensile strain in the InAs layers can be compensated by the compressive strain in InSb (∆a/a ~ +7.8% with GaSb) resulting in an enhancement of the device performance [3] [4] [5].

Different growth methods have been reported to form an 'InSb-like' IF at the GaSb-on-InAs IF. One of them uses the antimony-for-arsenic exchange where each InAs layer of the SL are exposed to an antimony soak for few seconds [6] [7]. Another method consists of growing an intentional  InSb  layer  either  by  conventional  MBE  (The  indium  and  antimony  shutters  are synchronously opened) [5] [8] [9] or by migration enhanced epitaxy (MEE) (The indium and

antimony shutters are asynchronously opened) [10] [11]. It has been demonstrated that abrupt interfaces can be grown by MEE [12] [13] and, in the case of SLs it has led to a smoother surface with improved optical properties compared to an InSb IF layer grown by conventional MBE [14].

In this paper, we compare two SL structures having a cut-off wavelength close to 5 µm at 77K. The  first  structure  has  been  grown  with  an  intentional  InSb  layer  grown  by  MEE  at  both interfaces while for the  second, an 'InSb-like' IF is formed using the antimony-for-arsenic exchange at the GaSb-on-InAs IF. Both growth methods are compared in terms of structural, morphological and optical properties by means of high-resolution x-ray  diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy. Following these results,  we  present  the  electrical  performances  of  a  p-i-n  photodiode  grown  using  the appropriate shutter sequence for the SL layer.

## 2. Experimental details

All InAs/GaSb SL structures presented in this paper were grown on a quarter of two-inch ptype  (001)-oriented  GaSb  substrate  in  a  Veeco  Gen  930  molecular  beam  epitaxy  reactor equipped with dual filament SUMO Knudsen effusion cells for gallium (Ga) and indium (In) and MARK V valved cracker effusion cells for arsenic (As) and antimony (Sb). The In and Ga growth rates were set to 0.3 and 0.5 ML/s, respectively. The InAs and GaSb layers were grown using a V/III flux ratio which is calibrated from RHEED oscillations of 1.2 and 2, respectively. The growth temperature was monitored by pyrometer and thermocouple, calibrated with the (1 x 3) to (2 x 5) reconstruction transition on the GaSb substrate and buffer surface. Before the growth, the native oxide on the GaSb substrate was first thermally desorbed at 540°C. The growth temperature was then lowered down to 490°C for the buffer layer and to 410°C for the SL layer to maintain a good quality of the 'InSb-like' IF [8].

We studied the shutter sequence during the growth of two different test samples (sample A and B) which the structure consists of a 50 nm undoped GaSb buffer, followed by 100 pairs of undoped InAs/GaSb SL and a 4 monolayers (ML) thick undoped GaSb capping layer. The SL period is composed of 7 ML of InAs and 4 ML of GaSb and the targeted cut-off wavelength is around 5 µm at 77K [15] [16]. The shutter sequence used for the SL layer growth of sample A and B is schematically presented in Figure 1. It is worth noting that the Sb flux is kept constant during the sample growth. For sample A, an intentional InSb layer is grown by MEE at both IFs. After the growth of the InAs layer, only the In shutter remains open for 1 s. It is then closed and, only the Sb shutter is opened for 6 s to saturate the In surface with Sb. The Ga shutter is then opened to grow the GaSb layer. At the InAs-on-GaSb IF, the Sb shutter remains open for an additional 6 s and, then only the In shutter is opened for another 1 s before growing the InAs layer. For sample B, the InAs layer is exposed to an incident Sb flux for 6 s to promote the Sbfor-As exchange and the formation of InSb bonds at the GaSb-on-InAs IF. The Ga shutter is then opened to grow the GaSb layer. Next, both Ga and Sb shutters are simultaneously closed while the In and As shutters are opened to grow the InAs layer. Note that in this case, the InAson-GaSb IF is not controlled whereas some research groups are exposing the GaSb surface to an incident As flux to promote a 'GaAs-like' IF [6] [7] [8].

Following the growth, the structural and morphological quality of both samples were studied using a Bede D1 X-ray diffractometer and a XE-100 Park Systems atomic force microscope. To access the optical properties of the SL structures, samples were then loaded in a cryostat equipped  with  CaF2  windows  to  carry  out  PL  measurements.  The  samples  were  optically excited using a 785 nm laser diode modulated at a frequency of 20 kHz. To collect the signal, a Nicolet iS50R Fourier transform infrared spectrometer equipped with an MCT detector was used.

## 3. Material characterizations

From the XRD spectra of the ω/2θ scan around the GaSb (004) reflection represented in Figure 2, it can be seen that the SL layer of sample A is under compressive strain on GaSb with a lattice mismatch of about ∆a/a ~ 0.479%. This indicates that the total InSb layer within the period, which is in compressive strain on GaSb, is too thick to obtain a strain-compensated SL. However, a nearly strain-compensated (∆a/a ~ 0%) SL layer was obtained for sample B. The measured SL period thickness is 3.69 and 3.54 nm for sample A and B, respectively. This difference is expected since an additional InSb layer is grown at both IFs in the SL layer of sample A. Finally, sample B presents a smaller full width at half maximum (FWHM) of 56 arcsec for the first-order SL satellite peak (SL-1) compared to 73 arcsec for sample A suggesting that sample B has a better structural quality than sample A.

The surface morphology for both samples has then been inspected by AFM measurements for different scan area (2 µm x 2 µm, 4 µm x 4 µm and 10 µm x 10 µm). The root mean square (RMS) values extracted from these measurements are summarized in Table 1. The surface roughness  seems  to  be  slightly  lower  for  sample  B  whatever  the  scan  area  indicating  that sample B has a relatively smoother surface morphology than sample A.

Finally, PL measurements have been carried out at a temperature of 77K (Figure 3) using the experimental procedure described in section II. The wavelength at the maximum peak intensity is equal to 5.55 µm (223 meV) and 5.10 µm (243 meV) for sample A and B, respectively. This shift to longer wavelength (i.e. smaller energy) observed for sample A confirms that the total InSb layer within the period is thicker than sample B. Indeed, it is consistent with previous work where the PL peak shifts from 245 meV to 215 meV with the increase of the InSb IF layer thickness (from 0 ML to 1.5 ML) at the GaSb-on-InAs IF [8]. Additionally, both samples show similar PL intensity and a FWHM PL peak of about 26 meV.

From those results, it seems that even though we introduced a compressive strain in sample A, the material quality does not appear degraded compared to sample B as both samples show similar characteristics in terms of RMS value, PL intensity and PL FWHM. To obtain a straincompensated SL using the shutter sequence described in Figure 1-a, the  In  and  Sb  shutter opening times could therefore be further adjusted. Besides, this growth method can be used for longwave InAs/GaSb SL as already demonstrated [11] [17]. However, in the context of this work, a p-i-n device structure has been grown using the same shutter sequence as sample B (Figure 1-b) to access the electrical performances.

## 4. Midwave InAs/GaSb SL p-i-n photodiode

The p-i-n device structure is presented in Figure 4 and consists of a 1 µm thick active region made of an undoped 7 ML InAs / 4 ML GaSb SL layer. The XRD spectrum of the ω/2θ scan around the GaSb (004) reflection of sample C is plotted in Figure 5. Again, a nearly straincompensated SL has been achieved demonstrating the reproducibility of the growth method. The measured period is 3.48 nm which is slightly thinner than sample B resulting in a slight change of the cut-off wavelength equal to 5.15 µm at 77K for sample C as we can see from the PL spectra represented in Figure 6.  In the inset of Figure 6, the energy band gap Eg, defined as the energy at the maximum PL intensity from which we subtracted the thermal contribution, is plotted as a function of temperature, T. This variation can be described using the well-known Varshni's equation [18] (inset Figure 6). The α parameter (0.3 meV/K) is equal to the value already reported in the literature for the same period composition while the β (325K) parameter which represents the quadratic variation of the band gap at low temperature is 125K lower in our  case  [15].  Concerning  the  surface  roughness,  sample  C  presents  a  similar  surface morphology to sample B with an RMS value of about 0.20 nm for a scan area of 2 µm x 2 µm.

Sample  C  was  processed  into  photodiodes  using  standard  photolithography.  Cr/Au  was deposited as bottom and top contact metal. Mesa photodiodes with a diameter ranging from 90 to 440 µm were realized by wet etching. Photoresist was spun onto the surface and baked to protect the etched surface. The sample was then placed in a cryogenic probe station to perform current - voltage (J-V) and capacitance - voltage (C-V) measurement using a Keysight B1500A Semiconductor Device Analyzer.

The measured J-V characteristics at different temperatures from 77K to 300K are represented in Figure 7-a. The current density at a reverse voltage of -50 mV as a function of the inverse of temperature is plotted in Figure -b along with the variation of the diffusion current ( ∝ 𝐸𝑔 /𝑘𝑇 with 𝐸𝑔 the  experimental  band  gap  from  Figure  6  and 𝑘 the  Boltzmann  constant)  and  the generation-recombination current (G-R ∝ 𝐸𝑔 /2𝑘𝑇 ). Up to 110K, we can observe in Figure 7a a shift towards positive voltage of the forward characteristics meaning that the photodiode is limited by the photocurrent from the 300K background (in the probe station), i.e. the intrinsic dark-current of the photodiode is lower than this photocurrent. According to Figure 7-b, the device is then limited by the G-R current and starts to be diffusion-limited at a temperature of 136K. In dark conditions, SL p-i-n photodiodes are usually limited by the G-R current at low temperatures [19] [20] [21] [22]. If we assume that the G-R current is the main mechanism limiting the intrinsic performance of sample C at 77K, we can estimate the dark-current level from the G-R variation plotted in Figure 7-b. It is equal to 8.3 x 10 -8 A/cm 2 at -50 mV which is  comparable to the state-of-the-art of midwave InAs/GaSb SL p-i-n photodiode grown on GaSb substrate [23] [24].

To complete the electrical characterization, C-V measurements at a frequency of    = 1 MHz f were performed on diodes with different diameters. A typical C-V characteristic obtained at 77K for a diode diameter of 440 µm is plotted in Figure 8. The residual carrier concentration

Nres is extracted from the slope close to 0V of the (A/C)  curve with A the diode area (inset 2 Figure 8) [25]. The Nres extracted from the average of (A/C)  measured for different diode 2 diameters is equal to 9.7 x 10 14 cm -3 which is in good agreement with values reported for the same period composition and thickness [15] [22].

## 5. Conclusion

We investigated on the influence of the shutter sequence during the growth of InAs/GaSb SL on the structural, morphological and optical properties. By growing an intentional InSb layer at both interfaces using the migration enhanced epitaxy technique, the SL layer appeared to be in compressive strain on GaSb. However, by exposing each InAs layer to an incident antimony flux for few seconds before growing the GaSb layer, we obtained a nearly strain-compensated SL (∆a/a ~ 0%) with a full width at half maximum of 56 arcsec for the first-order SL satellite peak. The sample surface is relatively smooth with a root mean square value of 0.19 nm on a 2 µm x 2 µm area. Following these results and using the same growth conditions, a p-i-n device structure having a cut-off wavelength of 5.15 µm has been grown and photodiodes fabricated. Electrical  performances  comparable  to  the  state-of-the-art  for  midwave  InAs/GaSb  SL photodiodes on GaSb substrate have been obtained with a dark-current level of 8.3 x 10 -8 A/cm 2 at - 50mV and a residual carrier concentration of 9.7 x 10 14 cm -3 at 77K confirming the good material quality obtained by choosing the appropriate shutter sequence.

## Acknowledgement

This  project  has  received  funding  from  the  European  Union's  Horizon  2020  research  and innovation  programme  under  the  Marie  Sklodowska-Curie  grant  agreement  No  743521 (Project acronym: ASISA). The authors would also like to acknowledge the financial support provided by Sêr Cymru National Research Network in Advanced Engineering and Materials.

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## Table captions

Table 1: RMS values measured by AFM for different scan area.

## Table

Table 1

| Scan Area     |   Sample A RMS (nm) |   Sample B RMS (nm) |
|---------------|---------------------|---------------------|
| 2 µm x 2 µm   |                0.2  |                0.19 |
| 4 µm x 4 µm   |                0.32 |                0.3  |
| 10 µm x 10 µm |                0.39 |                0.35 |

## Figure captions

Figure 1: Schematic shutter sequence during the SL growth of sample A and sample B.

Figure 2: XRD spectra of sample A (top) and sample B (bottom). The SL layer of sample A is under compressive strain with a lattice mismatch of ∆a/a ~ 0.479% while it is nearly straincompensated for sample B (∆a/a ~ 0%).

Figure 3: Photoluminescence spectra measured at a temperature of 77K.

Figure 4: InAs/GaSb SL p-i-n device structure grown on GaSb substrate. The active region is made of an undoped 7 ML InAs / 4 ML GaSb SL layer.

Figure 5: XRD spectrum of the SL p-i-n device structure (sample C).

Figure  6: PL  spectra  measured  at  different  temperatures  (from  77K  to  200K).  In  inset, evolution of the energy band gap with temperature which can be described using the Varshni's equation.

Figure 7 :  a)  Current  density  versus  voltage  measured at different temperatures. b) Current density measured at -50 mV as a function of the inverse of temperature (symbols). The variation of the diffusion and G-R currents are represented by the dash-dot line (red) and short-dash line

(blue), respectively. The photocurrent level from the 300K background is also plotted (dot line, orange).

Figure 8: Typical capacitance-voltage characteristic obtained for diodes with a diameter of 440 µm at 77K. In inset, the corresponding (A/C)  curve versus voltage (symbols) along with 2 the slope around 0V (line).

## Figures

Figure 1

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00797v1-figure-b05d3d4f-823e-4665-a16e-26114ee3fa19.jpg)

M. Delmas et al.

Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors

Figure 2

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00797v1-figure-d80b63b4-a8f2-4a37-a338-39bdc99fa01e.jpg)

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Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors

Figure 3

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00797v1-figure-af7ad332-6850-4bf9-b9b4-73f0d4c3b28f.jpg)

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Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors

InAs cap N+ ~ 1 x 1018 t ~ 20 nm cm 3

MW T2SL N+

MW T2SL

7 ML InAs/4ML GaSb

ni.d

t ~ 1 um

MW T2SL P+ 1 x cm 3 t ~ 60 nm 1018

GaSb buffer P+ t 100 nm 1018 cm 3

GaSb P-type substrate

Figure 4

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Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors

Figure 5

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00797v1-figure-c4eac927-f32c-4b3e-8875-ba59ed8fef87.jpg)

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Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors

Figure 6

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00797v1-figure-55bb2bb5-06fc-4ed6-b8c3-dda537be1188.jpg)

M. Delmas et al.

Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors

Figure 7

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00797v1-figure-a9d3e3cd-2eaf-4e9e-8ffc-c3ba5f0ff8e8.jpg)

M. Delmas et al.

Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors

Figure 8

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00797v1-figure-173b2126-d37d-4c1e-b237-5c0ede52162b.jpg)

M. Delmas et al.

Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors
M. Delmas M. C. Debnath B. L. Liang D. L. Huffaker
Material and device characterization of Type-II InAS/GaSb superlattice infrared detectors
This work investigates midwave infrared Type-II InAs/GaSb superlattice (SL)
grown by molecular beam epitaxy on GaSb substrate. In order to compensate the
natural tensile strain of the InAs layers, two different shutter sequences have
been explored during the growth. The first one consists of growing an
intentional InSb layer at both interfaces (namely GaSb-on-InAs and InAs-on-GaSb
interfaces) by migration enhanced epitaxy while the second uses the
antimony-for-arsenic exchange to promote an InSb-like interface at the
GaSb-on-InAs interface. SLs obtained via both methods are compared in terms of
structural, morphological and optical properties by means of high-resolution
x-ray diffraction, atomic force microscopy and photoluminescence spectroscopy.
By using the second method, we obtained a nearly strain-compensated SL on GaSb
with a full width at half maximum of 56 arcsec for the first-order SL satellite
peak. Relatively smooth surface has been achieved with a root mean square value
of about 0.19 nm on a 2 $\mu m$ x 2 $\mu m$ scan area. Finally, a p-i-n device
structure having a cut-off wavelength of 5.15 $\mu m$ at 77K has been
demonstrated with a dark-current level of $8.3 * 10^{-8} A/cm^2$ at -50 mV and
a residual carrier concentration of $9.7 * 10^{14} cm^{-3}$, comparable to the
state-of-the-art.