Controllable and Fast Growth of High-Quality Atomically Thin and Atomically Flat Bi2O2Se Films

Yusen Feng, 1,‡) Pei Chen, 1,‡) Nian Li, 1,a) Suzhe Liang, 2) Ke Zhang, 1,a) Minghui Xu, 1)  Yan Zhao, 1) Jie Gong, 1) Shu Zhang, 1) Huaqian Leng, 1) Yuanyuan Zhou, 1)  Yong Wang, 1) and Liang Qiao 1,a)

## Affiliations:

- 1) School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
- 2) Technical University of Munich, TUM School of Natural Sciences, Chair for Functional Materials, JamesFranck-Str. 1 85748 Garching, Germany

‡) These authors contributed equally.

- a) Authors to whom correspondence should be addressed: nianli@uestc.edu.cn (N. L.); phyzk@uestc.edu.cn (K.

Z) and liang.qiao@uestc.edu.cn (L. Q.)

## Abstract

As a novel and promising 2D material, bismuth oxyselenide (Bi2O2Se) has demonstrated significant potential to overcome existing technical barriers in various electronic device applications, due to its unique physical properties like high symmetry, adjustable electronic structure, ultra-high electron mobility. However, the rapid growth of Bi2O2Se films down to a few atomic layers with precise control remains a significant challenge. In this work, the growth of two-dimensional (2D) Bi2O2Se thin films by the pulsed laser deposition (PLD) method is systematically investigated. By controlling temperature, oxygen pressure, laser energy density and laser emission frequency, we successfully prepare atomically thin and flat Bi2O2Se (001) thin films on the (001) surface of SrTiO3. Importantly, we provide a fundamental and unique perspective toward understanding the growth process of atomically thin and flat  Bi O2Se  films,  and  the  growth  process  can  be  primarily  summarized  into  four  steps:  i) 2 anisotropic  nonspontaneous nucleation preferentially along the step roots; ii) monolayer Bi2O2Se nanosheets expanding across the  surrounding  area,  and  eventually  covering  the  entire  STO  substrate  step;  iii)  vertical  growth  of  Bi2O2Se monolayer in a 2D Frank-van der Merwe (FM) epitaxial growth, and iv) with a layer-by-layer 2D FM growth mode, ultimately producing an atomically flat and epitaxially aligned thin film. Moreover, the combined results of the crystallinity quality, surface morphology and the chemical states manifest the successful PLD-growth of high-quality Bi2O2Se films in a controllable and fast mode.

Keywords: Bi2O2Se, atomically flat, atomically thin, pulsed laser deposition, epitaxial growth

## Introduction

Due to the merits of moderate bandgap, excellent stability, and abundant nature retention, silicon has been a dominated semiconductor in microelectronic industry for more than 60 years. 1,2 However, when the thickness is less than 10 nm, silicon shows a reduced carrier mobility and a serious short-channel effect, which limits the further development of the silicon-based industry. In order to solve these problems and broaden Moore's Law, novel atomically thin 2D materials linked by weak van der Walls (vdW) force substitution of strong chemical bonding connections have received a lot of attentions, such as transition metal dichalcogenides (MoS2 and WS2), topological insulators (Bi2Te3 and Bi2Se3), black phosphorus and monolayer elemental films (Ge, Sn, silicene, etc). 3-6 Recently, a layered material, bismuth oxyselenide (Bi2O2Se) is regarded as one of the most promising candidates for the next-generation electronic industry due to its high electron mobility (450 cm  V -1 2 s -1 ,  room temperature), 7,8 moderate and tunable bandgap (~0.8 eV, up to 1.5 eV depending on thickness), 3,7,9 and excellent ambient stability. 7,10,11 Besides, Bi2O2Se can also be used in many other fields, including memristors, 12,13 ultrafast spectroscopy, 14 photocatalysis, 15 terahertz switches, 16 field-effect transistors,  photodetector, 7 17,18 solar cells, 19 etc. The prerequisite for these various applications is the fabrication of Bi2O2Se materials. Although most study focus on the bulk crystals and multiplayer films, achievement of atomically thin  Bi2O2Se films and atomically flat Bi2O2Se films deserves more efforts, with consideration of a large quantity of use in electronic industry.

Generally, Bi2O2Se films can be achieved via various methods, such as chemical vapor deposition (CVD), 7 molecular beam epitaxy (MBE), 20  pulsed laser deposition (PLD), 10,21 and solution-assisted methods. However, only the self-limiting vapor-solid deposition and MBE methods have been successfully applied for the atomical growth of low-dimensional Bi2O2Se thin films. For example, Khan et al. used the self-limiting vapor-solid method to obtain few-layer single crystal domains on a mica substrate; 22 Liang et al. exploited MBE to precisely control the growth of monolayer Bi2O2Se on a SrTiO3 (STO) substrate. 20  Compared to these two methods (CVD and MBE), PLD can combine advantages of the fast and controllable growth. However, there have been no reported on PLD-grown Bi2O2Se film with a monolayer or atomically flat surface of a large-scale area and a high quality. Importantly, the growth process for the Bi2O2Se films down to a few atomic layers has not been revealed in detail so far.

Therefore, in this work, we present a PLD approach to grow atomically thin and flat Bi2O2Se films with high quality in a large-scale area. We thoroughly investigate the effects of various parameters on the regulation of film growth by the PLD method. With precise optimization of the parameters, including growth temperature, laser energy density, laser emission frequency and oxygen pressure, a high-quality growth mode of 2D atomically flat Bi2O2Se thin films is achieved on a (001)-oriented STO substrate in a fast speed. Furthermore, the key growth processes of Bi2O2Se on STO are elucidated with the aid of atomic force microscopy (AFM), X-ray diffraction (XRD), and high-resolution X-ray photoelectron spectroscopy (HRXPS), which also provide the evidence of the quality of obtained atomically thin and atomically flat films. Notably, the atomically flat film structure is clearly

and directly visible in the AFM images. An intertwined weave structure is observed on the Bi2O2Se films prepared by the PLD method, which, in conjunction with other results, demonstrates the successful fabrication of higherquality Bi2O2Se films using PLD in a controllable and fast mode, as compared to MBE and CVD. This knowledge is expected as an essential piece required to broaden the application of Bi2O2Se films.

## Results and Discussion

As illustrated in Figure 1a, the as-obtained target is mounted to the rotator and subjected to laser illumination with a stable emission frequency and emission intensity provided by 248 nm wavelength KrF laser. High vacuum level of 10 -4 Pa is reached inside the entire chamber and after that oxygen is introduced, and target-substrate distance is set to 5.0 cm. Upon laser irradiation, the high-energetic species ablated from the target condense on the etched STO substrate, and then Bi2O2Se/STO films can be obtained after cooling. By rationally adjusting the parameters of temperature, oxygen pressure, energy density and emission frequency, we can obtain a series of films. Figure 1b shows the crystal structures of Bi2O2Se and STO. As a cubic perovskite oxide, STO (001) has a lattice parameter of a = 3.90 Å, which provides perfect lattice matching with Bi2O2Se (≈ 0.5% mismatch) of a tetragonal structure (I4/mmm, a = b = 3.887 Å, c = 12.202 Å, Z = 2). 23 Scanning transmission electron microscopy (STEM) and FirstPrinciple calculation provide an insight that Bi-TiO2 is the most closely bound way of interface epitaxial growth for Bi2O2Se. 20,24

Figure 1. a) Schematic illustration of epitaxial growth of atomically flat Bi2O2Se on the (001)-oriented STO substrate by

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PLD method, b) crystal structure of Bi2O2Se and STO.

Upon reaching the substrate, the species or atoms would undergo various processes, including surface diffusion, surface migration, re-evaporation, adsorption, and condensation. 25 During epitaxial growth, nucleation accompanied by condensation is considered a non-spontaneous process. 26  From a thermodynamic perspective, by analyzing the Gibbs free energy change and the energy equilibrium condition at all interfaces, we can determine

that a lower temperature reduces the critical size required for nucleation, resulting in a lower critical free energy barrier.  This,  in  turn,  benefits  for  the  formation  of  thin,  continuous  films  with  fine  grains.  However,  if  the temperature is too low, it can hinder surface diffusion, leading to condensation at low-energy chemisorption sites, which disrupts epitaxial growth and crystallization. If temperatures closer to the equilibrium temperature can produce coarser single-crystal structures. But, excessively high temperatures can exacerbate re-evaporation, and thus it is challenging to accomplish adsorption and condensation processes. 25 As shown in Figure 2a, the XRD patterns of Bi2O2Se films prepared at different temperatures indicate that single crystals can be formed at 400510 ℃, while it is difficult to condense into a film at 550 ℃. We can also know from Figure 2a that the intensity of diffraction peak and its full with at half maximum (FWHM) are optimized at about 450 ℃. Figure 2b shows the amplification of the (004) diffraction peaks at temperatures of 430, 450, 470, and 490 ℃. The clearly visible Laue  oscillations  and  Kiessig fringes  suggest  that  a  high  and  coherent  out-of-plane  order  over  the  entire thickness. 10 The emergence of Laue oscillations at the sample of 450 ℃ is generally taken as the evidence of the homogeneity  of  the  film  and  smoothness  of  the  interface,  thus  implying  that  450  ℃  is  an  optimal  growth temperature (Figure 2b). In addition, the AFM images of the films at different temperatures (Fig. S1) can support that 450 ℃ plays as a critical temperature for the surface roughness of the films. That is a local minimum root mean square (RMS) value at 450 ℃.

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Figure 2. Effects of different conditions on the growth of thin films. a) Out-of-plane XRD patterns of Bi2O2Se films prepared at different temperatures. b) Bi2O2Se (004) XRD peak of films grown at different temperatures of 430 ℃, 450 ℃, 470 ℃, 490 ℃. Laue oscillations indicate a high and coherent out-of-plane order over the entire thickness. c) XRD patterns of Bi2O2Se films prepared with different laser energy densities. d) XRD patterns of Bi2O2Se films prepared at oxygen pressures of 1 × 10 0 Pa, 1 × 10 -1 Pa, and 1 × 10 -2 Pa.

In contrast to temperature, the deposition rate exhibits a negative correlation with both the critical nucleus size and the change in the free energy of nucleation. Therefore, to achieve fine-grained continuous films, a higher deposition rate is required, which can be facilitated by employing lasers with high emission frequency and high energy density, as well as reducing the oxygen pressure. 25 Through Bi2O2Se (006) diffraction peaks, we obtain lattice constants and grain sizes at different emission frequencies by Bragg's Law (2dsin  =  n ) and Scherrer Formula ( 𝐷 = 𝑘𝜆 𝛽𝑐𝑜𝑠𝜃 ). Our research investigates a range of laser emission frequencies from 1 Hz to 9 Hz, and laser energy densities from 0.5 J/cm² to 2.0 J/cm². XRD data collected under all these experimental conditions (Fig. S2a  and  Figure  2c)  consistently  show  the  formation  of  single-crystal  structures.  Fig.  S2b,c  display  that  with emission  frequency  increase,  the  crystallite  and  growth  rate  increase  as  well,  but  the  lattice  constant  show  a fluctuation trend. Thus, the high emission frequency of 9 Hz can improve the crystallinity of the Bi2O2Se film, and simultaneously we can obtain a relatively low RMS roughness value (Fig. S3). Similarly, as the laser energy density increases (Fig. S4), the growth rate overall increases but the lattice constant decreases and gradually gets closer to the theoretical value (12.164 Å). However, as shown in Fig. S5, a high laser energy density adopted here is unsuitable, which shows a high RMS value. We assume that a high laser energy density will promote surface diffusion and grain coalescence (known as the Osvaldo annexation or fusion). This process contains the merging of smaller grains to form larger grains, thus further disrupting surface flatness and the 2D Frank-van der Merwe (FM) growth mode, and finally leading to an island growth.

Tuning the oxygen pressure to affect surface diffusion in a way that promotes the desired crystal structure and smooth film growth. Figure 2d and Fig. S6 show the XRD and AFM of the films prepared at oxygen pressures of 1 × 10 0 Pa, 1 × 10 -1 Pa and 1 × 10 -2 Pa, respectively. The AFM results indicate 3D Volmer Weber (VW) growth mode at 1 × 10 -2 Pa oxygen pressures, at which Bi2O2Se is deposited in the form of island-like particles, and that may be related to the vacancy of oxygen atoms due to the insufficient oxygen involved in the reaction. Whereas, 2D FM growth mode is exhibited at 1 × 10 -1  Pa oxygen pressure (Fig. S6b,e; terrace-like structure observed), which is more favorable for us to grow high-quality atomically thin and atomically flat films. 1 × 10  Pa oxygen 0 pressure will also cause growth mode of 3D VW, due to the fact that excess oxygen leads to the formation of heterogeneous phases. Besides the surface morphologies, we continue to compare the crystal phase among these three samples. Besides the Bi2O2Se phase, we can also find Bi2O3 diffraction peaks in the 1 × 10 0  Pa sample, which can prove that the impurity phase is formed (denoted with an arrow in Figure 2d).

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9

Figure 3. Growth processes of atomically flat Bi2O2Se. a) Surface morphology of TiO2-terminated STO substrate, showing clear  terraces  with  a  step  height  of  0.387  nm.  b-f)  Surface  morphology  of  Bi2O2Se  films  with  different  thicknesses:  b,c) monolayer, d) 6 nm, e) 147 and f) 35 nm. g) Schematic illustration of Bi2O2Se film grown on the (001) surface of STO.

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b

Following a comprehensive investigation of each individual parameter, including single-crystal growth rate, grain size, flatness, and epitaxial growth quality, we have identified an optimal growth environment: a temperature of 450 ℃, an oxygen pressure of 3.7 × 10 -1 Pa, and a laser energy density of 0.5 J/cm  with an emission frequency 2 of 9 Hz. This condition is employed to grow a series of Bi2O2Se thin films with varying thicknesses on etched STO (001) substrates with stepped TiO2 termination. Previous studies have reported that, TiO2-terminated STO readily coordinates with Bi2O2 2+ to  form a compound [BiTiO4] 1- 27 , which facilitates the binding of Bi2O2Se to STO substrate.  Furthermore,  the  creation  of a  2D electron  gas  (2DEG)  requires  an  STO  substrate  with TiO2 termination, 28 which exhibits an exceptionally high carrier mobility (exceeding 10 4 cm 2 V -1 s -1 ) at the perovskite heterojunction. 28-30 To prepare etched substrates, we use a BHF buffer solution etching method (more details provided  in  Supplementary  Information,  Experiment  section). As  displayed  in  Figure  3a,  high-quality  etched substrates with a step width around 150 nm are chosen. The AFM pattern shows that the chosen substrates have an excellent flatness with a step height of 0.387 nm, which is comparable to the lattice constant of perovskitestructure STO lattice and also to the spacing of the two TiO2 termination.

Figures 3b-d and 3g illustrate the AFM images and a schematic diagram of the growth process of Bi2O2Se thin films.  During  the  initial  nucleation  stage,  Bi2O2Se  exhibits  preferential  growth  along  the  step  roots,  forming monolayer Bi2O2Se nanosheets with a rim. This process creates a new step in the original plane, with a height of approximately 0.6 nm (Figure 3b), corresponding to the thickness of a combined [Bi2O2] 2n+  and [Se] 2n-  layer. Subsequently, the single-layer Bi2O2Se nanosheets will expand to the surrounding area. As they grow, adjacent nanosheets  will  merge  and  eventually  cover  the  entire  STO  step.  At  this  stage,  a  V-shaped  trench  forms, comprising the Bi2O2Se step, the STO step, and the Bi2O2Se step on the next layer. Notably, the height difference between the two Bi2O2Se steps is consistent with the STO layer height difference of 0.387 nm.

As the sputtered Bi2O2Se plasma continues to be deposited, the monolayer grows upward in a 2D FM mode. Although ions in the V-trench have the ability to form bonds on multiple sides, the 0.389 nm height difference between adjacent SrTiO3 steps causes the upper and lower Bi2O2Se layers to become misaligned. Furthermore, the identical height of the upper [Bi2O2] 2n+ layer and lower [Se] 2nlayer would result in a significant increase in interfacial energy if newly adsorbed atoms were to condense into the V-shaped trench, thereby increasing the total energy of the system. As a result, the V-shaped trench is retained. As shown in Figure 3c, lattice mismatch leads to gaps in the same layer of Bi2O2Se, and then the film will continue to generate multiple layers upwards. Figure 3d shows that the preferential growth of some regions creates a larger step height difference, which would make it  possible to grow along the step gradient. If the transverse growth exceeds the width of the next step, it can connect to the step further down, forming a transverse sheet. Ultimately, the diffusion and connection of the sheets along the step with the transverse sheet give rise to a crossed textile structure. The AFM pattern of textile structure can be seen in Figure 3f. According to previous studies, 31 Se vacancies can also form textile structures, but it is

not clear whether there is any correlation between the two textile structures. It  can be seen that 147 nm-thick Bi2O2Se films do not show strip-like steps, but exhibits a regional lamellar structure (Figure 3e). The height of adjacent steps is still consistent with the height of single Bi2O2Se layer, which suggests the film well maintains a 2D FM layer-by-layer growth mode and that the mismatches between the regions have been resolved. X-ray reflectivity (XRR) measurements (Fig. S7) reveal the presence of oscillations in the reflectivity curve for the 147 nm thick film, which signifies a coherent out-of-plane structural order throughout the entire thickness of the film. All these samples show a single crystal phase without impurities (Fig. S8).

To have an in-depth understanding about the crystallinity of the Bi2O2Se samples, the rocking curves of the Bi2O2Se (004) peaks are examined. The  -rocking curve of the Bi2O2Se (004) peak, as shown in Figure 4a, is relatively narrow, and has a FWHM of ~0.07°, consistent with the fact that Bi2O2Se deposited on STO has a low lattice mismatch and grow structurally similar directions. We further examined the in-plane crystal structure of Bi2O2Se epitaxial thin films deposited at 450 ℃. As shown in azimuth Ф scans of the off-axis {011} peaks of STO substrate and the Bi2O2Se film (Figure 4b), the four peaks separated by 90° are present in these two films, which confirms the in-plane alignment of the Bi2O2Se film with the STO substrate. 10,20 The Bi2O2Se and STO peaks are located at the same angular position, indicating that the unit cells show no rotation with respect to one another. Thus, we can conclude that the Bi2O2Se films deposited on STO via PLD method show a high crystal quality. Figure 4c shows the growth rate of Bi2O2Se film grown on STO is about 5.9 nm/min, which is about 11 times faster than that of multilayer Bi2O2Se/STO films realized by the CVD method and about 196 times faster than the MBE method. 20,21  Higher growth rates mean lower production costs, which suggests that synthesis of high-quality Bi2O2Se films by PLD method holds excellent promise for industrial applications.

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Figure 4. Quality inspection of the films grown at 450 °C. a) The  -rocking curve of corresponding (004) reflection. b) Azimuth Ф scans of the off-axis {011} peaks of STO substrate and the Bi2O2Se film. c) Plot of film thickness versus deposition time, showing a growth rate of 5.9 nm/min. d-f) X-ray photoemission spectra of 35 nm-thick Bi2O2Se/STO film.

The electronic properties of 35 nm Bi2O2Se film are characterized using HRXPS. As shown in Figure 4d, the two spin-orbital-coupling (SOC) symmetric peaks of Bi 4f7/2 and Bi 4f5/2 are centered at 156.8 eV and 162.1 eV, which can be attributed to the Bi peak in the O-Bi bond. 3,32,33 Similarly, according to the effect of SOC, the Se 3d peak is split into two Lorentz peaks centered at 53.5 eV and 54.4 eV (Figure 4e), corresponding to the Se 3d5/2 and Se 3d3/2. 3,32 The fitted results of the peaks are all within a reasonable chemical shift range, 34,35 which is also confirmed by the HRXPS data of the Bi2O2Se film at different specific thicknesses (Fig. S9). Thus, we reason that the Bi2O2Se film have a high quality in its chemical state.

## Conclusion

In conclusion, we have systematically explored the impact of various fabrication parameters, involving growth temperature, laser energy density, laser emission frequency and oxygen pressure, on the film properties by PLD method and using etched STO (001) substrates, and simultaneously have gained a deep understanding of the growth  mechanism  for  Bi2O2Se  films.  The  growth  process  can  be  primarily  summarized  into  four  steps:  1) anisotropic  non-spontaneous nucleation preferentially along the step roots; 2) monolayer Bi2O2Se nanosheets expanding across the surrounding area, and eventually cover the entire STO substrate step; 3) monolayer Bi2O2Se grows vertically in a 2D FM epitaxial growth, and 4) with a layer-by-layer 2D FM growth mode, ultimately producing an atomically flat and epitaxially aligned thin film. By precisely controlling the thickness of Bi2O2Se films grown via a 2D FM mode, we successfully prepared atomically thin and atomically flat Bi2O2Se films on STO  substrate  with  TiO2  termination,  exhibiting  epitaxial  quality  superior  to  that  of  previously  reported Bi2O2Se/STO films grown by PLD methods. Notably, the film growth rate in the present study reaches 5.9 nm/min, offering  a  significant  cost  advantage  over  other  methods,  like  MBE,  for  large-scale  industrial  fabrication. Furthermore, XRD and HRXPS measurements verify that the Bi2O2Se films exhibit excellent epitaxial growth with high crystallinity quality and chemical homogeneity.

## Supplementary Material

See  supplementary  material  for  the  experimental  details,  the  surface  morphology  of  Bi2O2Se  films  at different temperatures, XRD data of Bi2O2Se films at different emission frequencies, XRD data of Bi2O2Se films at different laser energy densities, surface morphology of Bi2O2Se films at different laser energy densities, surface morphology of Bi2O2Se films at different oxygen pressures, X-ray reflected pattern of different thicknesses and XPS data of Bi2O2Se films at representative thicknesses.

## Acknowledgements

This work was supported by funding from the National Science Fundation of China (12304078, 52072059) ， Natural Science Foundation of Sichuan Province (2024NSFSC1384).

## AUTHOR DECLARATIONS

## Conflict of Interest

The authors have no conflicts to disclose.

## Author Contributions

Yusen Feng and Pei Chen equally contributed to this work.

Yusen Feng: Data curation (supporting); Formal analysis (equal); Investigation (equal); Methodology (equal); Writing  -original  draft  (main); Writing  -  review  &amp;  editing  (equal). Pei  Chen: Data  curation  (main);  Formal analysis (equal); Investigation (equal); Methodology (equal). Nian Li: Conceptualization (equal); Data curation (supporting);  Investigation (equal); Methodology  (equal); Project administration (equal); Supervision (equal); Writing -original draft (supporting); Writing - review &amp; editing (equal). Suzhe Liang: Data curation (supporting); Visualization (equal);  Writing -review  &amp;  editing  (equal). Ke  Zhang: Conceptualization  (supporting); Investigation (equal); Methodology (equal); Project administration (equal); Supervision (equal); Writing -original draft  (supporting); Writing  -  review &amp; editing (equal). Yan Zhao: Investigation  (equal); Writing  -  review  &amp; editing (supporting). Minghui Xu: Investigation (equal); Writing - review &amp; editing (supporting). Jie Gong: Investigation  (equal); Writing  -  review  &amp;  editing  (supporting). Shu Zhang: Investigation  (equal); Writing  review &amp; editing (supporting). Huaqian Leng: Formal analysis (equal); Writing - review &amp; editing (supporting). Yuanyuan Zhou: Formal analysis (equal); Writing - review &amp; editing (supporting). Yong Wang: Formal analysis (equal);  Writing  -  review  &amp;  editing  (supporting). Liang  Qiao: Conceptualization  (equal);  Data  curation (supporting); Formal analysis (equal); Funding acquisition (main); Investigation (equal); Methodology (equal); Project administration (equal); Resources (main); Supervision (equal); Validation (equal); Writing -original draft (supporting); Writing - review &amp; editing (equal).

## DATA AVAILABILITY

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Yusen Feng Pei Chen Nian Li Suzhe Liang Ke Zhang Minghui Xu Yan Zhao Jie Gong Shu Zhang Huaqian Leng Yuanyuan Zhou Yong Wang Liang Qiao
Controllable and Fast Growth of High-Quality Atomically Thin and Atomically Flat Bi$_2$O$_2$Se Films
As a novel and promising 2D material, bismuth oxyselenide (Bi$_2$O$_2$Se) has
demonstrated significant potential to overcome existing technical barriers in
various electronic device applications, due to its unique physical properties
like high symmetry, adjustable electronic structure, ultra-high electron
mobility. However, the rapid growth of Bi$_2$O$_2$Se films down to a few atomic
layers with precise control remains a significant challenge. In this work, the
growth of two-dimensional (2D) Bi$_2$O$_2$Se thin films by the pulsed laser
deposition (PLD) method is systematically investigated. By controlling
temperature, oxygen pressure, laser energy density and laser emission
frequency, we successfully prepare atomically thin and flat Bi$_2$O$_2$Se (001)
thin films on the (001) surface of SrTiO3. Importantly, we provide a
fundamental and unique perspective toward understanding the growth process of
atomically thin and flat Bi$_2$O$_2$Se films, and the growth process can be
primarily summarized into four steps: i) anisotropic non-spontaneous nucleation
preferentially along the step roots; ii) monolayer Bi$_2$O$_2$Se nanosheets
expanding across the surrounding area, and eventually covering the entire STO
substrate step; iii) vertical growth of Bi$_2$O$_2$Se monolayer in a 2D
Frank-van der Merwe (FM) epitaxial growth, and iv) with a layer-by-layer 2D FM
growth mode, ultimately producing an atomically flat and epitaxially aligned
thin film. Moreover, the combined results of the crystallinity quality, surface
morphology and the chemical states manifest the successful PLD-growth of
high-quality Bi$_2$O$_2$Se films in a controllable and fast mode.