## Pressure-induced phase transition for single crystalline LaO0.5F0.5BiSe2

Masaya Fujioka 1,a) , Masashi Tanaka , Saleem J. Denholme , Takuma Yamaki 1 1 1,2 , Hiroyuki Takeya , Takahide Yamaguchi , and Yoshihiko Takano 1 1 1,2

1 National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

2 University of Tsukuba, 1-1-1Tennodai, Tsukuba, Ibaraki 305-0001, Japan

We have demonstrated a pressure-induced phase transition from a lowT c phase to a highT c phase in a single  crystal  of  the  superconductor  LaO0.5F0.5BiSe2. The  highT c phase  appears  at  2.16  GPa  and  the maximum superconducting transition temperature ( T c ) is observed at 6.7 K under 2.44 GPa. Although the anisotropy ( ) for the lowγ T c phase is estimated to be 20, it is reduced by around half (9.3) in the highT c phase. This tendency is the same for the BiS2 system. The T c of LaO0.5F0.5BiSe2 has continued to increase up to the maximum pressure of this study (2.44 GPa). Therefore applied further pressure has the potential to induce a much higher T c in this system.

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a) Author to whom correspondence should be addressed.  Electronic mail: FUJIOKA.Masaya@nims.go.jp

Recently, a series of BiS2-based superconductor such as Bi4O4S3 1 , LnO1-xFxBiS2 (Ln = La, Ce, Pr, Nd, Yb)  2-8 and  Sr 1-x FxBiS2 9,10 were  discovered.  These  compounds have a layered structure composed of superconducting BiS2 layer and charge reservoir blocking layers. This structure is in common with the cuprate superconductors 11 and Fe-based superconductors 12 . The most attractive point of LnO1-xFxBiS2 is the pressure induced phase transition from a lowT c phase to a highT c phase 2, 13-16 .  For instance, the T c of LaO0.5F0.5BiS2, which was synthesized by a conventional solid state reaction, is obtained at only 3 K. On the other hand, the T c largely increases above 10 K by using high pressure synthesis. Furthermore, even  if  the  sample  is  prepared  by  using  a  conventional  solid  state  reaction  method,  high  pressure measurements can enhance the T c above 10 K 16 . Very recently, we have reported the pressure induced phase  transition  for  the  single  crystalline  PrO0.5F0.5BiS2 17 .  From  this  study,  it  was  found  that  the semiconducting-like behavior in lowT c phase changes to the metallic behavior and the γ is reduced by around half after the phase transition.

The  modification  of  superconducting  and  blocking  layers  is  one  of  the  promising  approaches  to discover  new  superconducting  materials 18 . Polycrystalline  LaO0.5F0.5BiSe2  was  discovered  by  the replacement of the BiS2 superconducting layers in LaO1-xFxBiS2 to the BiSe2 layers 19 . In such a material whether the pressure induced phase transition can be observed or not is a point of interest. Also it will provide useful  information  to  know  the  mechanism  of  emergence  for  the  highT c phase.  In  previous research, we have succeeded in preparing single crystalline LaO0.5F0.5BiSe2 and performing structural analysis  of  this  compound 20 .  According to our previous study on PrO0.5F0.5BiS2 17 ,  it  was  found that applying uniaxial pressure to single crystals effectively induces the highT c phase. Also, measurements using single crystals are suitable to investigate the intrinsic properties of these materials. In this research, we investigated the pressure induced phase transition of single crystalline LaO0.5F0.5BiSe2.

The single crystals were prepared by the CsCl flux method. The details of characterization are shown in ref. 20. All described fluorine content in this article is the nominal amount. X-ray diffraction (XRD)

measurement showed that the single crystals were highly oriented to the c -axis as shown in Fig.1. The c lattice  parameter  was  estimated  to  be  1.414(4)  nm.  Electrical  resistivity  was  measured  by  a  physical properties measurement system (PPMS) under varying pressures up to a maximum of 2.44 GPa. The measurement was performed by a standard four-probe method from 300 K to 2 K in a piston-cylindertype pressure cell. The measured sample was formed into rectangles with dimensions of around 1.3 × 0.4 × 0.02 mm . Since the thickness (20 μm) is smaller compared to the other dimensions, therefore the 2 actual applied pressure should be almost uniaxial along the c -axis, despite the fact that we are using a hydrostatic pressure technique. This relationship between sample configuration and anisotropic pressure has been demonstrated previously in ref.21. The resistivity measurements were performed under several magnetic fields with directions both parallel to the ab plane ( H ab // ) and c axis ( H c // ), under 1.17 and 2.44 GPa.

The temperature dependence of resistivity  for  LaO0.5F0.5BiSe2 under various pressures is shown in figure 2 (a) and (b). The data points at ambient pressure were noisy due to poor contact resistance, but was improved by applied pressure. In this study, T c onset and T c zero were regarded as described in figure 2 (b). The resistivity at  ambient pressure and 0.76 GPa starts to decrease at 3.4 K and a second drop is observed at 2.4 K. Although the zero resistivity was not obtained at ambient pressure, T c zero appeared at 2.2 K under 0.76 GPa. Additionally, a small hump at around 40 K is observed at ambient pressure and 0.76 GPa. This hump was also confirmed in our previous report 22 . When increasing pressure up to 1.17 GPa, it completely disappears. However, even though the pressure increases up to 2.16 GPa, T c zero does not  increase  above  2.7  K.  On  the  other hand,  at  2.16  GPa,  the  resistivity  starts  to drop  at 6.3  K  and shows a step like behavior. This means that some of parts in the sample form the highT c phase. For further pressure up to 2.44 GPa, the T c onset clearly appears at 6.7 K and the T c zero suddenly increases up to 5 K. From this figure, it is expected that the drop of resistivity at around 3 K corresponds to the lowT c phase, and the highT c phase is obtained at around 7 K. However, under ambient pressure and 0.76 GPa,

another  drop of  resistivity  is  also  observed  at  2  K.  This  may  be  due  to  the  inhomogeneous  fluorine concentration, or a local distortion for the extreme thinness of the sample.

In this measurement, we confirmed the discontinuous increase in T c of LaO0.5F0.5BiSe2, as was also observed with the BiS2 system. Therefore, regardless of whether the superconducting layers are made up of sulfur or selenium, a pressure induced phase transition occurs. Furthermore, in the highT c phase, the BiS2 and BiSe2 systems show similar behavior. Namely, the resistivity in the normal conducting state of the highT c phase gradually increases with increasing applied pressure 17 . On the other hand, in the lowT c phase,  although  the  BiS2  system  shows  semiconducting-like  behavior,  the  metallic  behavior  is observed in the BiSe2 system.

The temperature dependences of resistivity under magnetic field along the c -axis  and  the ab plane were  measured  as  shown  in  figure  3  (a)-(d).  When  the  magnetic  field  is  parallel  to  the c axis, superconductivity  is  drastically  suppressed  with  increasing  magnetic  field.  This  is  typical  behavior observed in superconductors with a layered structure. Figure 4 shows the upper critical field ( H c2 ) versus temperature for the low- and highT c phase. To estimate the H c2 , 90 % of resistivity at T c onset is adopted as a criterion. In this article, H c2 obtained from magnetic field H ab // and H c // are described as H c2 // ab and H c2 // c respectively. In addition, the γ ,  the coherence length at 0 K along the c axis ( ξc (0)) and the ab -plane  ( ξab (0))  are  estimated  from  figure  4  by  using  following  formula: γ = H c2 // ab / H c2 // c , H c2 // c = Φ0/2π ξab 2 (0) and H c2 // ab = Φ0/2π ξab (0) ξc (0), where Φ0 is flux quantum. Obtained these superconducting parameters in low- and highT c phase are summarized in table I.

Although the γ for the lowT c phase is estimated to be 20, it is reduced by around half (9.3) in the highT c phase. This tendency is the same as in the BiS2 system 19 .  As mentioned above, the BiS2 and the BiSe2 systems showed very similar behavior under  high pressure. It is suggested that these materials exhibit  the  same  mechanism  for  the  pressure  induced  phase  transition.  In  the  previous  study  of LaO0.5F0.5BiS2, a pressure induced structural transition from tetragonal phase ( P4/nmm ) to monoclinic

phase  ( P21/m )  was  suggested  from  XRD  analysis  under  high  pressure 16 .  Such  a  kind  of  structural transition is one of the possible explanations for the pressure induced phase transition of LaO0.5F0.5BiSe2, since  it  has  the  same  structure  as  LaO0.5F0.5BiS2  in  lowT c phase.  Currently,  high-pressure  XRD measurements for the BiSe2 system have not yet been performed. Therefore, a detailed investigation for the structure of BiS2 and BiSe2 system may provide useful information for understanding the mechanism behind the highT c phase.

Within recent days, a paper about LaO0.5F0.5BiSe2 was submitted to arXiv 23 . it shows that the results of the resistivity measurements under high pressure are slightly different from our results. Although the pressure  induced  phase  transition  is  also  shown  in  that  paper,  in  the  lowT c phase,  the T c gradually decreases with increasing applied pressure 23 . This different behavior in lowT c phase may be due to the difference of the fluorine concentration between our samples and the reported samples.

In  summary,  we  revealed  that  the T c of  LaO0.5F0.5BiSe2  discontinuously  increases.  Although  our sample  does  not  show  zero  resistivity  at  ambient  pressure,  by  applying  pressure  up  to  2.44  GPa, maximum T c onset and T c zero were observed at 6.7 K and 5 K. The resistivity of both low- and highT c phases shows metallic behavior. This is very different from what was seen in the BiS2 system. The γ extremely  decreases  from  20  to  9.3  after  the  phase  transition,  and  the  resistivity  of  the  normal conducting  state  in  highT c phase  gradually  increases  with  increasing  applied  pressure  which  is  in accordance  with  the  BiS2  system.  In  this  current  stage,  the  optimal T c of  LaO0.5F0.5BiSe2  was  not observed even at the maximum pressure obtained during this study. Therefore applied further pressure has the potential to induce a much higher T c in this system.

This  work  was  supported  in  part  by  the  Japan  Science  and  Technology  Agency  through  Strategic International Collaborative Research Program  (SICORP-EU-Japan)  and  Advanced  Low  Carbon Technology R&amp;D Program (ALCA) of the Japan Science and Technology Agency.

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## FIG. 1

XRD patterns of LaO0.5F0.5BiSe2. All diffraction peaks are assigned to the (00l) indices.

## FIG. 2

- (a): Resistivity versus temperature from 300 K to 2 K for LaO0.5F0.5BiSe2 under varying pressure. (b): The expanded view around T c .

## FIG. 3

Resistivity versus temperature at 1.17 and 2.24 GPa under magnetic field with the different directions, which are parallel with ab plane ( H ab // ) and c axis ( H c // ).

## FIG.4

Upper critical  field  versus  temperature  for  the  lowT c (black)  and  highT c (red)  phases.  Solid  circles denote the H c2 // ab . Open circles denote H c2 // c . The dashed lines denote the straight-line approximation.

TABLE I. Superconducting parameters for La(O0.5F0.5)BiSe2 under 1.17 (lowT c phase) and 2.44 GPa (highT c phase).

|   Pressure (GPa) | d H c2 //ab /d T (T/K)   |   d H c2 //c /d T (T/K) |   H c2 //ab (0) (T) |   H c2 //c (0) (T) |   ξ ab (0) (nm) |   ξ c (0) (nm) |   γ (0) |
|------------------|--------------------------|-------------------------|---------------------|--------------------|-----------------|----------------|---------|
|             1.17 | -1.94                    |                   -0.01 |                 5.5 |                0.6 |           23.4  |           2.56 |    20   |
|             2.44 | --3.39                   |                   -0.59 |                20.6 |                3.4 |            9.83 |           1.63 |     9.3 |

Fig. 1

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0108v1-figure-54ad7633-de71-4a2c-9b8c-b4aa57d7e209.jpg)

Fig. 2

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0108v1-figure-3384952f-207c-4dd5-9baf-754997cde853.jpg)

Fig. 3.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0108v1-figure-4b7c2af2-1a31-4269-b322-824de4cae054.jpg)

Fig. 4.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1408.0108v1-figure-7b58f74c-b8c3-417b-a81f-fb5821d1244c.jpg)
Masaya Fujioka Masashi Tanaka Saleem J. Denholme Takuma Yamaki Hiroyuki Takeya Takahide Yamaguchi Yoshihiko Takano
Pressure-induced phase transition for single crystalline LaO0.5F0.5BiSe2
We have demonstrated a pressure-induced phase transition from a low-Tc phase
to a high-Tc phase in a single crystal of the superconductor LaO0.5F0.5BiSe2.
The high-Tc phase appears at 2.16 GPa and the maximum superconducting
transition temperature (Tc) is observed at 6.7 K under 2.44 GPa. Although the
anisotropy ({\gamma}) for the low-Tc phase is estimated to be 20, it is reduced
by around half (9.3) in the high-Tc phase. This tendency is the same for the
BiS2 system. The Tc of LaO0.5F0.5BiSe2 has continued to increase up to the
maximum pressure of this study (2.44 GPa). Therefore applied further pressure
has the potential to induce a much higher Tc in this system.