## Nanoscale spin rectifiers for harvesting ambient radiofrequency energy

Raghav Sharma 1,2 , Tung Ngo 1 , Eleonora Raimondo 3 , Anna Giordano , Junta Igarashi , Butsurin 4 5 Jinnai , Shishun Zhao , Jiayu Lei , Yong-Xin Guo , Giovanni Finocchio , Shunsuke Fukami 6 1 1 1 3 5-8 , Hideo Ohno 5-8 and Hyunsoo Yang 1*

- 1 Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore

2 Department of Electrical Engineering, Indian Institute of Technology Ropar, Rupnagar 140001, India

3 Department of Mathematical and Computer Sciences, Physical Sciences and Earth Sciences, University of Messina, I-98166 Messina, Italy

4 Department of Engineering, University of Messina, I-98166 Messina, Italy

5 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan

- 6 Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan

7 Center for Science and Innovation in Spintronics, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan

8 Center for Innovative Integrated Electronic Systems, Tohoku University, 468-1 Aramaki Aza Aoba, Sendai 980-0845, Japan

*e-mail: eleyang@nus.edu.sg

Radiofrequency harvesting using ambient wireless energy could be used to reduce the carbon footprint of electronic devices. However, ambient radiofrequency energy is weak (less than  20  dBm),  and  the  performance  of  state-of-the-art  radiofrequency  rectifiers  is restricted by thermodynamic limits and high-frequency parasitic impedance. Nanoscale spin rectifiers based on magnetic tunnel junctions have recently demonstrated high sensitivity, but suffer from a low a.c.-to-d.c. conversion efficiency (less than 1%). Here, we report a sensitive spin rectifier rectenna that can harvest ambient radiofrequency signals between  62  and  20  dBm. We also develop an on-chip co-planar waveguide-based spin rectifier

array  with  a  large  zero-bias  sensitivity  (around  34,500  mV  mW  1 )  and  high  efficiency (7.81%). The self-parametric excitation driven by voltage-controlled magnetic anisotropy is a key mechanism that contributes to the performance of the spin-rectifier-array. We show that these spin rectifiers can be used to wirelessly power a sensor at a radiofrequency power of  27 dBm.

Wireless sensor networks (WSNs) play a critical role in applications such as health and environmental monitoring, and the Internet of Things (IoT). Sensors installed in difficult to access locations  which are required, for example, in monitoring air quality, temperature, and moisture  should  ideally  be  battery-free.  Large  sensor  and  IoT  device  networks  require  numerous radiofrequency (rf) sources to exchange data. A considerable amount of the ambient rf energy from these sources remains unused and could thus be harvested and converted to dc power 1,2 to power electronic devices and sensors 3-8 (Fig. 1a). Compared to other energy harvesting sources (such as solar,  vibration,  thermal,  and  wind),  rf  energy  harvesting  offers  all-day  availability,  easy accessibility, and can be integrated with small WSNs 9,10 .

A rf energy harvesting module (EHM) consists of a receiver antenna, a rectifier, a power management module, and a load that uses the harvested dc power (Fig. 1b). The EHM should work at an ambient available rf power level ( P rf ) of below  20 dBm (10 µW), as per the IEEE wireless LAN standards for the 2.4 GHz band (which is the most abundant waste rf source in the ambient) 11 . The rectifier is an important part of the EHM, and defines the overall efficiency ( P dc / P rf , where P dc is the harvested dc power). State-of-the-art rf rectifiers are based on Schottky diodes, transistors, and complementary metal-oxide-semiconductor (CMOS) technology 12-14 .  The Schottky diodes (either  on  rigid  substrates  such  as  silicon  and  III-V  compound  semiconductors 15,16 or  flexible substrate based on two-dimensional MoS2 14 )  and tunnel diodes 17 , are the most efficient 13,14,18,19

rectifiers for the electromagnetic energy harvesting. Efficiencies can reach 40-70% 5,6,14,20-25 , but in the low-power regime ( P rf less than  20 dBm), the thermodynamic limit creates a challenge 26,27 . Schottky diodes (with an antenna) have achieved an efficiency of 5-19% (2.45 GHz) at P rf between  30 and  20 dBm 5,24,28-33 ,  but practical implementation with an EHM operating at P rf less than  20  dBm  remains  a  challenge 3,5,6,14,34 .  A  commercial  2.45  GHz  EHM  has  been  developed  by Powercast, but only works at P rf larger than -10 dBm 34 .

Spin rectifiers (SRs) based on magnetic tunnel junctions (MTJs) could overcome the lowpower limitations of charge-based rectifiers and eliminate antenna and matching circuits SRs can convert a rf to a d.c. signal due to the spin diode effect 35,36 , where an applied rf current exerts a torque on the local spins of the free magnetic layer of the SRs, resulting in a precession motion and resistance oscillation at the same frequency as the rf signal. The resistance oscillation with a rf current produces a rectified voltage ( V r ) across the top and bottom contacts of the SR (Fig. 1c). SRs  are  nano-sized,  sensitive 27 ,  CMOS  compatible 37 , battery-free 38 and  frequency-tunable 36 , making them a potential candidate for next-generation rectifiers. Sensitivities in the range of 1.2  10 4  10 6 mV mW 1  have been reported in dc-biased SRs  35 using a perpendicular free layer 27 , canted free-layer 38,39 ,  vortex-expulsion 40,41 and  a  spin  bolometer 42 .  Furthermore,  SR-based  EHMs can operate  at P rf around  0  dBm  at  2.45  GHz ,  but  with  an  efficiency  of  less  than  1%,  which  is 7 impractical for harvesting at ambient condition. Further advances in performance are thus needed before  SRs  can  be  used  in  applications  such  as  detectors  and  sensors 4,7,37,43 .  In  particular,  the narrow rectification band of less than 2 GHz 4,38,39,42 needs to be improved and the efficiency needs to be increased . 4

In this Article, we report on two SR prototypes: a 2.45 GHz SR rectenna for low-power energy harvesting at P rf between  62 dBm and  20 dBm, and a SR array integrated with an on-

chip co-planar waveguide for broadband rectification with a zero-bias sensitivity ( S )  of  around 34,500  mV  mW -1 and  an  efficiency  of  7.81%.  Micromagnetic  simulations  and  microwave emissions data show that the approach relies on self-parametric excitations driven by voltagecontrolled  magnetic  anisotropy  (VCMA),  which  reduces  the  threshold  for  excitation  of  a broadband rectification response and leads to enhanced sensitivity in the array arrangement of SRs. Our SRs can be integrated into EHMs, and their signal-to-noise ratio (SNR) and noise equivalent power (NEP) performances are suitable for low microwave power detector applications in noisy environments.

## Device engineering for low power operation

We use the uniformly magnetized SRs for GHz-range rectification. Our SRs consist of a CoFeB free layer (FL) and reference layer (RL) separated by an MgO spacer layer (Fig. 1c). The free and spacer layer thickness and SRs dimension are varied to control the interfacial anisotropy and tunneling magnetoresistance (TMR), in order to have the proper values of zero-bias resistance, resonance frequency, and equilibrium direction of the magnetization. We find that the SRs with the FL and spacer thickness of 1.9 nm and 1 nm, respectively, and dimensions of 40 × 100 nm  to 2 80 × 200 nm 2 demonstrate the best rectification results (Supplementary Notes 1-3).

We study the detailed properties with the zero-bias and zero magnetic field conditions. Figure 1d shows the rectification response (rectified voltage vs. input microwave frequency) of 40 × 100 nm 2 and 80 × 200 nm  devices at 2 P rf =  30 dBm. We select the SRs with the frequency close to WiFi (2.4 GHz), 4G (2.3-2.6 GHz) and 5G (3.5 GHz) bands. We observe that the rectified signal in  the  40  ×  100  nm   to  80  ×  200  nm  SRs is a combination of symmetric and anti-symmetric 2 2 Lorentzian 44 .

We find the maximum sensitivity of ~3800 mV mW  1 and ~2200 mV mW  1 at P rf =  55 dBm and  40 dBm, respectively, for the 80 × 200 nm  and 40 × 100 nm 2 2 SRs, which is higher than the  zero-bias  sensitivity  of  previous  reports 7,27,38,44 and  a  state-of-the-art  zero-bias  Schottky diode 45 . The better sensitivity and rectification voltage in the 80 × 200 nm  SRs are due to a high 2 zero-field TMR,  R zb = ( R zb -R p )/ R p , 27,38 (Supplementary Fig. 2) and larger VCMA (Supplementary Note 4), where R zb is the zero-field resistance and R P is the parallel configuration resistance. The 80 × 200 nm  SR shows VCMA &gt; 50 fJ/Vm and 2  R zb &gt; 30%. A high zero-field TMR (  R zb ) more than 30% is useful for acquiring a large zero-field and zero-bias rectified signal. Moreover,  a  significant  VCMA  &gt;  50  fJ/Vm  improves  the  sensitivity  due  to  the  nonlinear contribution 44 (Supplementary Note 4), where the observed VCMA is stronger than the reported value of 30-50 fJ/Vm in MTJ-based SRs 38,44,46 . Recent improvements of TMR to 631% 47 and the VCMA to 320 fJ Vm -1 48 may enhance the rectified voltage of SRs. A relatively low resistancearea (RA) product is another key requirement, as a large RA significantly reduces the rf current flow  through  the  SRs.  Furthermore,  to  produce  a  significant  zero-field  and  zero-bias  rectified signal, canted anisotropy with a  R zb is  required. Therefore, canted SRs with a high zero-field TMR, low RA, and high VCMA coefficient are useful for energy harvesting applications. The sensitivity decreases at P rf &gt;  20 dBm (Fig. 1e) due to the decrease of  R zb and saturation of the rectified voltage ( V r ) 7,27,38 (Supplementary Note 5).

## SR-rectenna for ultra-sensitive rf energy harvesting

While  injecting  an  rf  signal  using  a  probe  station,  a  rf  power  loss  of  35  60% due  to impedance mismatching is observed at 2.4 GHz (Supplementary Note 6). To improve sensitivity, a high-gain impedance matched antenna ( R x ) is designed and attached to the 80 × 200 nm  SR 2 (Fig.  2a),  to  utilize  them  as  a  SR-rectenna.  Figure  2b  shows  the  antenna  design,  where  the

transmission line dimensions are varied to match the SR impedance at 2.45 GHz (Supplementary Note 7). The rectified voltage and sensitivity in Fig. 2c,d shows significant enhancement due to an impedance-matched SR-rectenna, especially at ultra-low power P rf &lt;  50 dBm. The sensitivity of probe station-based excitation  in  Fig.  1e  and  SR-rectenna-based  wireless  excitation  in  Fig.  2d shows similar results (shown in red), indicating that the SR-rectenna is well integrated. Using the matched SR-rectenna, the rectified voltage is V r = 6.27 µV at P rf =  62 dBm, corresponding to S ~10,000 mV mW  1 , which is larger than the S of 450-1850 mV mW  1 reported in other SRs 7,27,38 and the unmatched SR (3800 mV mW  1 ) in Fig. 1e. A high sensitivity more than 1000 mV mW  1 is observed for a wide range of P rf between  62 and  25 dBm.

## Role of magnetic anisotropy in designing SR-array

The  matched  SR-rectenna  shows  a  significantly  improved  rf  sensitivity.  However,  the voltage is insufficient for the EHM. Hence, it is necessary to connect SRs in an array for enhancing the output  voltage. Compared  to  Schottky  diode  cascading  (2  to  4  stages)  for  voltage multiplication, the SRs can be easily connected by the small wirebonds 7,37 , making them compact. Moreover, a potential on-chip integration of SRs with the CMOS technology is expected to have more  benefits  from  our  SR-array  demonstration.  Here,  we  discuss  the  influence  of  single  SR behavior on the array design using 40 × 100 nm  and 80 × 200 nm  devices. 2 2

First, we consider the experimental rectification response of the individual SR. In contrast to the resonant behavior at P rf ≤  30 dBm (Fig. 1d), the 40 × 100 nm  SR shows a broadband 2 response (0.1  3.5 GHz) at P rf   25 dBm (Fig. 3a), whereas the 80 × 200 nm  SR shows a resonant 2 behavior at both P rf   25 dBm (Fig. 3b) and P rf ≤  30 dBm (Fig. 1d). In addition, due to tunability with  the  magnetic  field,  a  large  bandwidth  of  0.1-6  GHz  using  a  single  SR  is  observed (Supplementary Fig. 8a). This bandwidth is twice of previous reports of SRs 4,49 .

To study the scalability of the SR technology, we connect 10 SRs (40 × 100 nm  and 80 × 2 200 nm 2 )  in  series  without  any  external  antenna  to  excite  the  SR-array  directly  by  wireless  rf energy, which is the key challenge for the development of ultra-compact EHMs. To save on-chip area for making ultra-compact EHMs, a small co-planar waveguide (240 × 500 µm ) is attached 2 to individual SRs to couple the rf power. The 40 × 100 nm  SR-array shows a broadband response 2 compatible with the individual SRs response at P rf &gt;  25 dBm (Fig. 3a). In contrast to the single SR broadband behaviour at a high magnetic field (Supplementary Fig. 8a), a SR-array due to the enhanced self-parametric effect achieves a wide range broadband behaviour without any magnetic field (Fig. 3a), making it more appropriate for on-chip applications. Compared to the 40 × 100 nm 2 SR-array,  the  80  ×  200  nm   SR-array  shows  a  transition  from  resonant  to  broadband  with  a 2 narrower detection bandwidth (Fig. 3b) but higher sensitivity. Hence, the 80 × 200 nm  SR-array 2 can  be  used  for  a  band-pass  filter-rectifier.  Overall,  the  peak  rectified  voltage  is  scaled  by approximately N times upto 4-5 devices, where N is the number of the SRs connected in series. After that, the output starts to deviate from the N scaling and begins to saturate (Supplementary Fig.  9).  In  general,  more  number  of  SRs  connected  in  series  show  a  broadband  rectification response, and hence increase the integrated rectification voltage.

We perform the micromagnetic simulations to reproduce the transition from resonant to broadband in a 40 × 100 nm 2 single SR. Fig. 3c summarizes a phase diagram of the rectification curves as a function of the frequency and amplitude of the current density ( J ac ) where the transition from resonant to broadband detection can be observed. Fig. 3d shows the amplitude of the x -component of the magnetization, Δ mx (parallel to the polarizer) as a function of the amplitude of J ac . Examples of simulated rectification curves are displayed in Fig. 3e. It can be noted that at a low input power (e.g. J ac = 0.1 MA/cm 2 ) in Fig. 3e, the detection curves are resonant with a small

precession angle. As the power increases (e.g. J ac = 10 MA/cm 2 ), a large amplitude magnetization precession Δ mx leads to the broadband response. This rectification mechanism is observed in small SRs (40 × 100 nm 2 ), where the canted equilibrium angle is 50-70 . On the other hand, for the 80  × 200 nm 2 SR, where the canted equilibrium angle is close to out-of-plane (79-95  ), the transition from resonant to broadband is not observed 7,38 .

In order to understand the potential origin of the transition from resonant to broadband response in the 40 × 100 nm  SR-array, we have performed additional experimental studies. The 2 microwave emissions of a single and two series connected 40 × 100 nm  SRs driven by a rf current 2 𝑖 ௔௖ ൌ 𝐼 ௔௖ 𝑠𝑖𝑛ሺ 2  𝑓𝑡ሻ at  a  frequency of f are  recorded in the spectrum analyzer (Fig. 3f,g). The microwave emissions of a single SR exhibit a weak second harmonics (2  component) at 6 GHz f (Fig. 3f), whereas the second harmonics peak power is enhanced by one order of magnitude in the two SRs connected in series (Fig. 3g). The decrease in the threshold power required for the onset of  2 f peak i.e.,  the  self-parametric effect and the enhancement of 2  peak power in the seriesf connected SRs is shown in Fig. 3h. The presence of the second harmonics can be understood considering that the magnetoresistance oscillates at the same frequency of the input rf current 𝑅ሺ𝑡ሻ ൌ 𝛥𝑅ௌ 𝑠𝑖𝑛ሺ 2  𝑓𝑡 ൅ 𝜑 ோ ሻ , where 𝜑ோ is a phase shift. The voltage across the SR is given by

$$V _ { r } = \frac { 1 } { 2 } \Delta R _ { S } I _ { a c } \, c o s ( \varphi _ { R } ) ( 1 - c o s ( 2 \pi f t + \varphi _ { R } ) ) + \frac { 1 } { 2 } \Delta R _ { S } I _ { a c } \, s i n ( \varphi _ { R } ) \, s i n ( 2 \pi f t + \varphi _ { R } ). \quad ( 1 )$$

As already demonstrated, these devices have large VCMA, when connected in series, the voltage at  2 f originated  in  one  SR  drives  a  parametric  excitation  in  the  other  SR  enhancing  the magnetization precession angle. This mechanism recalls the self-parametric excitation 50,51 and it can explain the large voltage (large sensitivity) observed in Fig. 3b. To support this claim, we have performed a systematic micromagnetic study of the magnetization oscillation as a function of the VCMA amplitude considering an rf current at   and a VCMA applied at 2 . Supplementary Fig. f f

10a shows an example of these calculation, comparing the response at VCMA field of 0 mT and 10 mT. The calculation results confirm that the amplitude of magnetization precession increases with increasing VCMA, supporting the idea of self-parametric excitation. The VCMA-based selfparametric effect opens a path for design of next generation of high-performance SRs. In addition, we expect that the microwave magnetic field of the incident electromagnetic wave can couple directly to the free layer magnetization enhancing the amplitude of the magnetization precession.

## SR-array based broadband low-powered EHM

Due to the high sensitivity and rectified voltage in the 80 × 200 nm  SR-array (10 SRs in 2 series), we integrate them in an EHM as shown in Fig. 4a, in an ambient environment without an extra external antenna. The SR-array shows the rectification voltage ( V r ) of 20 mV and 11 mV using the 2.45 GHz and 3.5 GHz rf sources at P rf =  25 dBm, respectively (Fig. 4b). The voltage threshold of the boost converter is 20 mV, which SR-array achieves at  22 dBm at 2.45 GHz.

The SR-array voltage ( V r ) steps up from 20  50 mV to 1.6  4 V by the boost converter. The temperature sensor turns on at V step ~1.2 V, which is achieved at  27 dBm and  22 dBm using the dual sources (2.45 GHz and 3.5 GHz) and a single 2.45 GHz source, respectively, for the EHM demonstration.  The  EHM  takes  a  total  15  30  seconds  for  powering  the  sensor  initially.  The response  time  of  SR-array  to  accumulate  ~20  mV  takes  only  a  few  seconds  due  to  the  low capacitance  (pF  to  fF),  which  is  another  major  advantage  of  SRs.  However,  to  avoid  the  fast charging-discharging effect of SRs due to a low capacitance, we use an external capacitor of 0.01 F (capacity 3.3 V) to hold a stable rectified voltage. The SR-array voltage is V r ~28 mV at P rf =  25 dBm using those two sources, which is converted to V step ~3.7 V by the boost converter. The estimated charging time of an external capacitor to reach 20 mV at P rf =  25 dBm is  23-24 seconds, which is close to the experimentally observed charging time of around 20-25 seconds for

the EHM to turn on the sensor. Here, the differential resistance of the SR-array is measured as  2 k  . EHM  can  work  steadily  for  one  hour  and  the V step can  be  stored  in  the  capacitor (Supplementary Note 11). The V step is then connected to a low-current driven handheld multimeter, showing a negligible discharging or leakage effect after turning off the wireless source (Fig. 4c). The 1.2 V temperature sensor and 1.6 V LED can remain ON for ~50 s and 30 s, respectively, after turning off the wireless source, useful for discontinuous rf environment. Hence, SR-array based EHM can be used for broadband operation to power various electronic devices.

## Comparison with existing rf energy harvesting technology

In 2014, Hemour et al . 13 predicted that an optimized SR could outperform state-of-the-art rectifiers in the rf power range of  70 to  10 dBm. We compare the SR-rectenna and SR-array with the two commercially available low-power Schottky diodes (HSMS-2860 and SMS-7630) under the same ambient condition in Fig. 5a,b. We measure the zero-bias differential resistance ( R zbr ) of SR, SR-array, HSMS 2860, and SMS 7630 when irradiated by 2.45 GHz at P rf =  25 dBm and find the values of 0.27, 2, 5, and 5.1 k  , respectively. Here, P rf is the power emitted from the signal  generator,  without  including  any  antenna  gain  and  losses  at  the  device  interface  due  to impedance mismatching to determine the actual front-end efficiency (see method). Our results show that SR-rectenna works reliably (SNR &gt; 20 dB) for  62 dBm &lt; P rf &lt;  20 dBm, enabling SRrectenna  sensitive  for  the  weak  ambient  condition  (Supplementary  Note  12).  Furthermore,  we measure  the  noise  equivalent  power  (NEP)  of  a  single  SR,  which  is  defined  as  the  ratio  of V noise /sensitivity, where V noise is the noise voltage. A low NEP of  2 × 10 -12 W Hz 0.5 is measured at P rf = 0.1 µW (  40 dBm) without a dc bias ( I dc = 0 mA), which is slightly smaller than the NEP measured in previous reports of SRs with a dc bias 38 (Supplementary Note 12). The observed high SNR and low NEP imply that SRs are suitable for low-power microwave detector applications.

The SR-array shows a low SNR at P rf &lt;  50 dBm in comparison to SR-rectenna due to an increased parasitic capacitance (Supplementary Fig. 12a). However, in the rf power range of  50 dBm to  20 dBm, an SR-array outperforms due to a high efficiency (  ~7.81% at  30 dBm) and sensitivity (~34,500 mV mW  1 at  50 dBm) as shown in Fig. 5a,b. The efficiency is 2-3 orders of magnitude higher than the previous SR (1.2 GHz)  at 4 P rf &lt;  20 dBm (Supplementary Fig. 13).

Although the performance of state-of-the-art rf rectifiers based on Si, GaAs or MoS2, can reach an efficiency of 40  80% at P rf &gt;  10 dBm 6,14,20-25 , their performance at P rf &lt;  20 dBm is limited (Supplementary Fig. 14) for the EHM demonstrations as summarized in Table 1. Only few works show a high-efficiency of 5  19% 5,24,28-33 at  30 dBm &lt; P rf   20 dBm after including the antenna efficiency, whereas our work shows an SR-array efficiency without antenna in Fig. 5a.

Furthermore,  the  SR-array  is  connected  in  an  equivalent  electrical  area  of  ~1  mm , 2 including  the  co-planar  waveguide,  which  couples  the  rf  power  to  the  SR  devices.  Packaged Schottky diodes (&gt; 10 mm ) with a high-efficiency antenna captures an overall area of at least few 2 cm 2 , impractical for on-chip scaling. Even with the miniaturized antenna, the size is reduced only to ~200 mm 2 for low-power applications . Our demonstration shows that the SR-array could be 5 the most-sensitive and compact solution for ambient energy harvesting technology (Table 1).

## Conclusions

We have reported a SR rectenna with a large rf sensitivity of around 10,000 mV mW  1 at  62 dBm, which can harvest rf energy in weak and noisy ambient environments. In the case of a single SR, intrinsic device properties such as the perpendicular anisotropy, device geometry, and dipolar field from the polarizer layer play a crucial role in defining the energy landscape of the nanomagnet, and the excitation of a large angle magnetization precession at low input power. The sensitivity is linked to the dynamical response of the MTJ and depends on the zero-field TMR and

the VCMA coefficient, which enhances the zero-bias rectified voltage driven by the spin-polarized current. Furthermore, an external matching setup can minimize input power losses and enhance the sensitivity of the SR-rectenna. In the case of the SR array, we observed a VCMA-driven selfparametric  effect,  which  results  in  an  enhancement  of  the  sensitivity  and  detection  bandwidth without incorporating any external antenna or matching setup. We showed that our SR-array-based EHM can power a commercial sensor at a low rf power of  27 dBm without the use of an extra antenna. Our SRs are compact, not prone to suffering from parasitic effects, easy to integrate, scalable, and efficient in ambient conditions.

## Methods

Device structure. The SR layered structure is sapphire substrate/Ta (5)/Ru (10)/Ta (5)/Pt38Mn62 (15)/Co (2.4)/Ru (0.88)/Co18.75Fe56.25B25 (2.4)/MgO ( t MgO)/Co18.75Fe56.25B25 ( t CoFeB)/Ta (5)/Ru (5) (thicknesses  in  nm).  The  MgO  and  other  layers  are  deposited  using  the  rf  and  dc  magnetron sputtering, respectively, at room temperature and base pressure &lt; 1 × 10 -6 Pa with the Ar gas flow. The thickness of topmost CoFeB free layer ( t CoFeB) and spacer MgO layer ( t MgO) are varied from 1.7  1.9 nm and 0.9  1.2 nm, respectively, to tune the canted equilibrium direction (along the z -direction from the x direction in Fig. 1c) as described in Supplementary Notes 1-3. The bottom CoFeB (2.4 nm) is the reference layer (RL), whose magnetization direction is pinned along the x direction due to Co/Ru/CoFeB synthetic antiferromagnetic (SAF) coupling, which is exchange biased by an antiferromagnet PtMn.

Device engineering. The SRs were first optimized by varying t CoFeB and t MgO. The SRs with t CoFeB = 1.9 nm and t MgO = 1 nm, show the best performance. For further tuning the SRs performance, the stack is processed into elliptical SRs with the dimensions of 40 × 100 nm  to 160 × 400 nm 2 2

using e-beam lithography and Ar ion beam milling by keeping the aspect ratio of 2.5. The 40 × 100 nm 2 to 80 × 200 nm  shows the best zero-bias rectification results due to canted equilibrium 2 magnetization. The bigger devices (100 × 250 nm  to 160 × 400 nm 2 2 )  show  low  rectification performance. Here, we use the 40 × 100 nm  and 80 × 200 nm  for discussing the scalability and 2 2 diverse functionalities of SR. The best optimized 80 × 200 nm  SR devices show the first-order 2 anisotropy ( µ H 0 k,eff ) of 0.25  0.3 T, TMR of 53  82%, RA of 4  6 Ω µm , frequency of 2.1 2  3.6 GHz, and resistance &lt; 500 Ω .

Microwave measurement for the optimization. For the optimization of SRs, we use the probestation for the rf excitation and rectification measurements. The SRs rectification responses are measured  using  the  spin  torque  ferromagnetic  resonance  (ST-FMR)  technique.  A  rf  signal modulated at a low frequency of 213 Hz is applied using a signal generator and the resulting rectified dc voltage is measured by a lock-in amplifier with a time constant of 100 milliseconds and  a  low  pass  filter  slope  of  24  dB/octave.  The  rf  loss  of  35-60%  on  the  linear  scale  in  the frequency  range  from  2.4  to  2.5  GHz  is  measured  due  to  the  impedance  mismatch  of  50  terminated probes and SRs using the reflection coefficient ( S 11 ) measured on the linear scale in the vector network analyser. We have included the rf loss in the sensitivity extraction for the probe station-based  measurements  in  Fig.  1e  and  Supplementary  Fig.  3d,  where  the  sensitivity  is calculated  as S = V P r / .  Here, P = P rf ×  (1-| S 11 | 2 ),  is  the  power  reaching  the  SR-devices  after including the losses and P rf is  the actual power fed from the signal generator (rf source) to the wires in the probe station-based measurements.

Rectenna Design. The rectenna is designed by attaching an antenna to the SR. For the antenna design  shown  in  Fig.  2b,  we  first  measure  the S 11 of  the  SRs  using  VNA  for  the  impedance calculation (Supplementary Fig. 7a). The patch antenna is fabricated on the RO4003C substrate.

The dimension of the transmission line is optimized to match the SR impedance at 2.45 GHz. The insertion loss of the matched antenna is  17.5 dB at 2.45 GHz and can cover the entire range of the WiFi band (2.4  2.5 GHz) with S 11 &lt;  10 dB (Supplementary Fig. 7b). A high gain of 7.2 dBi is measured in the far-field region (Supplementary Fig. 7c). The SR-rectenna is tested successfully for a distance of 10  15 cm between the transmitter and receiver antenna. Another high-gain 50 Ω patch antenna is designed for the comparison. The coupling between the transmitting and receiving antenna  used  in  the  SR-rectenna  is  determined  by  the  VNA  measurement  as  shown  in Supplementary Fig. 7d,e. The sensitivity for the rectenna measurement is S = V P r / rf , where P rf is determined by the S 21 parameter of the transmitting and receiving antennas (Supplementary Fig. 7d,e).

Spectrum  analyzer  measurement: In Fig. 3f,g, we  have used the spectrum analyzer measurement.  The  details  of  the  setup  are  given  in  ref.  7.  In  the  spectrum  analyser,  the  SRs oscillation signal and reflected signal due to the input rf signal ( P rf ) coexist. Even though the SRs oscillation signal is separated from the injected rf input signal through a directional coupler, the separation is imperfect. Since the linewidth of SRs (few MHz) and reflected signal (few Hz) from the injected rf input are very different, we can separate the injected input signal from the SR signal as a background subtraction. As the resolution of the spectrum analyzer is a few kHz (much larger than the reflection of the injected rf signal linewidth), the injected rf signal appears as a single data point, which could be easily subtracted by a proper Lorentzian fitting of the measured signal.

Multi-band rectification and EHM demonstration. The broadband rectification in Fig. 3a,b is performed using a high-gain (6  7 dBi) broadband (0.8  18 GHz) horn antenna. For the multi-band EHM demonstration, we used a resonant 2.4  2.5 GHz patch antenna (gain ~7.2 dBi) and 3.5  3.6 GHz whip antenna (gain ~3 dBi). The antennas are fed by the signal generator. The SR-array

voltage ( V r ) is stored in the capacitor before amplified by the boost converter to 1.5  4 V. For the stability analysis in Fig. 4c, the step-up voltage ( V step ~3.7 V) is first stored and then supplied to the multimeter, LED, and temperature sensor. The EHM demonstration is performed at varying distances of 2.5  5 cm. For the EHM demonstration at  27 dBm, the antenna is placed at ~2.5 cm from the SR-array chip. The co-planar waveguide design, on chip devices, and setup component images are shown in Supplementary Fig. 15.

Comparison with Schottky diode. For the comparison, the HSMS-2860 and SMS-7630 Schottky diodes are connected with the 50  antenna, whereas a single SR is attached with an impedance matched antenna. The efficiency is calculated by  = P dc / P rf , where P dc = V r 2 / Rzbr . Here, Rzbr is the resistance of the SR-devices or Schottky diodes monitored during the measurement. The sensitivity is calculated as S = V P r / rf . Here, for a fair evaluation of all the systems together, the P rf is the actual power emitted from the rf source (signal generator), without correcting for the transmitting antenna gain and losses at the device interface or due to attenuation to estimate a front-end efficiency. Please note that the sensitivity calculation includes the losses only for probe station measurements used for optimization (Fig. 1e), while no losses are taken into account for the rectenna and energy harvesting measurements, underestimating the sensitivity. In the independent measurements using the  VNA ( S 21 ),  spectrum  analyser  connected  with  the  receiving  antenna,  or  rf  power  meter  to measure  the  emitted  wireless  power  from  the  transmitting  antenna,  we  found  that  the  power available at 2.5 cm differs from the power fed by the rf source ( P rf ) only by  0.5-3 dBm, which shows the high directivity of the transmitting antenna with minimal gain and attenuation in the near field region. Hence, in the near-field measurements, we find that the received power at 2.5 cm is very close to the actual power fed by the signal generator ( P rf ) and no correction due to any antenna gain or loss at the device interface is considered for the sensitivity estimation, independent

of using SR-rectenna, SR-array or Schottky diodes for the wireless energy harvesting. Since the losses at the device interface are ignored, the derived sensitivity denotes the lower bound of the device performance. The evaluated performances of the HSMS-2860 and SMS-7630 Schottky diodes are well matched with their data sheets. The SR-array is tested without an antenna, where the small ground-signal-ground co-planar waveguide (240 µm × 500 µm) of Cr (5 nm)/Au (100 nm) formed by photolithography and lift-off on the SR, couples the rf signals. The small wirebonds (&lt;  1  mm),  used  to  connect  the  MTJs,  may  couple  a  small  amount  of  rf  power  to  the  MTJs. However, these wirebonds are mainly used as a dc or low frequency transmission path for the rectified signal.

Micromagnetic  simulations. Micromagnetic  simulations  have  been  performed  by  solving numerically the Landau-Lifshitz-Gilbert-Slonczewski equation 52 :

$$\frac { d m } { d t } = \frac { \gamma M _ { S } } { ( 1 + \alpha _ { G } ^ { 2 } ) } \left [ - ( m \times h _ { e f f } ) - \alpha _ { G } ( m \times m \times h _ { e f f } ) + \sigma J ( m \times m \times p ) \right ]$$

where 𝛼ீ is  the  Gilbert damping, 𝒎ൌ𝑴 𝑀ௌ / is  the  normalized magnetization vector, 𝛾 is  the gyromagnetic ratio and 𝑀ௌ is the saturation magnetization of the MTJ free layer (FL). The effective magnetic field, 𝒉௘௙௙ , includes the demagnetizing field, and the interfacial uniaxial perpendicular anisotropy. The spin-transfer torque (STT) term is proportional to the pre-factor 𝜎 ൌ ௚ ఓಳ ௉ | | | ௘ ఊ బ ெ | ೄ భ మ ௗ೥ , where g is the gyromagnetic splitting factor, 𝜇஻ is the Bohr magneton, e is the electron charge, 𝑑௭ is the thickness of the FL, and P is  the  spin polarization. The ac current density flowing into the device is given by 𝐽 ൌ 𝐽 ௔௖ 𝑠𝑖𝑛൫ 2 𝜋𝑓𝑡 ൅ 𝜑௃ ൯ .  The  VCMA is included in the effective field as a changing  anisotropy  field.  The  amplitude  of  the  VCMA  field  can  be  computed  as ℎ௏஼ெ஺ ൌ ଶక௏್ ఓబெೞ ௧೥ ௧ ೚ೣ మ , where   is the linear VCMA coefficient, ξ Ms is the saturation magnetization, 𝑡 ௭ is the free layer thickness, and 𝑡 ௢௫ is the oxide thickness. For a single device, the VCMA field ℎ௏஼ெ஺ can be

larger than 2 mT ( Ms = 800 kA/m, 𝑡 ௭ = 1.9 nm, 𝑡 ௢௫ = 1 nm, microwave current density of 1  10 6 A/cm 2 , R AP = 1 k Ω , and ξ = 50 fJ/(mV)), where R AP is the resistance in anti-parallel configuration. However, in order to simulate the effect of self-parameter excitation at twice the input microwave frequency, which enhances the microwave emissions power as shown in Fig. 3h, the effect of the VCMA field is analyzed for a higher, more reasonable value of 10 mT in Supplementary Fig. 10a.

We  have  simulated  an  elliptical  40  nm  ×  100  nm  ×  1  nm  hybrid  device,  where  the perpendicular anisotropy is larger than the demagnetizing magnetic field and hence the equilibrium direction  of  the  magnetization m is  tilted  from  the  out-of-plane  direction  as  observed  in  the experiment. The polarizer magnetization p is in-plane along the x direction (Fig. 1c). The main micromagnetic parameters are 𝑀ௌ ൌ 800kA/m , perpendicular uniaxial anisotropy constant 𝐾௨ ൌ 0.39MJ/m ଷ , 𝛼ீ ൌ 0.02 , 𝑔 ൌ 2 , and 𝑃 ൌ 0.7 , and the dipolar field originated by the polarizer is added as a constant 𝐻஽஼ ൌ  5 mT. In simulations the rectification curves are computed for the amplitude of the ac current density raging from 𝐽 ௔௖ ൌ 0.1 to  10 MA/cm  and a frequency scan 2 from 𝑓 ൌ 0.1 to 15 GHz. In the simulations presented in Supplementary Fig. 10a, the frequency of the VCMA is two times of that of the applied ac current density. For matching the frequency of the experimental data of rectification curves for the 40 × 100 nm  single SR (  ~ 3.5 GHz) in Fig. 2 f 3e, the perpendicular uniaxial anisotropy constant is tuned to K u = 0.419 MJ/m 3 (Supplementary Fig. 10b).

Table 1 | Comparison of state-of-the-art 2.45 GHz rf rectifiers for the low-power operation and EHM demonstration.

|                             | Area (rectifier + antenna)   | Low power Efficiency                            | Antenna                                            | Power for EHM demo   | Ref       |
|-----------------------------|------------------------------|-------------------------------------------------|----------------------------------------------------|----------------------|-----------|
| MoS 2 flexible rectifier    | ~few mm 2                    | ~2% at  20 dBm                                 | On-chip antenna                                    | +3 dBm               | 14        |
| HSMS-2852                   | 214.1 mm 2                   | ~20% at  20 dBm (including antenna efficiency) | Rectenna                                           | +10 dBm              | 5         |
| HSMS-2852                   | Few cm 2                     | ~7  8% at  25 dBm                             | Rectenna                                           | +36 dBm              | 6         |
| Powercast commercial module | Full board                   | 5 %at  10 dBm                                  | Separate antenna                                   | >  10 dBm           | 34        |
| 65 nm CMOS technology       | CMOS Chip                    |                                                | 1.27 cm 2 antenna                                  | +15.5 dBm            | 53        |
| SR-array                    | 1.2 mm 2                     | 7.8% at  27 dBm                                | On-chip co- planar waveguide (no external antenna) |  27 dBm             | This work |

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Fig 1| The rf energy harvesting using spin-rectifiers. a ,  Illustration of the energy harvesting modules powering up small sensors and electronic components such as a light-emitting diode and temperature  sensor  by  converting  ambient  rf  energy  (shown  by  dashed  circles)  to  a  useful  dc voltage ( V dc ). The ambient rf energy is shared by various electronic gadgets and internet of things (IoT) devices, whereas WiFi routers and transmitters for the Bluetooth and Long-Term Evolution (LTE) represent the rf sources. b ,  Prototype model of the energy harvesting module, where an ambient rf power ( P rf ) is converted to a dc power ( P dc ) that can be used as a usable electric power by the load. c , Layered structure of spin-rectifier with top and bottom contacts. d , Zero-bias and zero magnetic field rectification ( V ) as a function of frequency ( ) of 40 × 100 nm  and 80 × 200 f 2 nm 2 devices at P rf =  30 dBm.  , Sensitivity ( e S ) at 3.5 GHz and 2.45 GHz from 40 × 100 nm  and 2 80 × 200 nm 2 devices, respectively as a function of the rf power ( P rf ). The error bar in the S values shows the standard deviation of the peak rectified voltage from five measurements.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-576b2f60-4f7e-498c-b596-533dfc6741f9.jpg)

Fig. 2| Performance of SR-rectenna. a , Schematic of integration of the matched antenna with the SR. T x is  the  50 Ω transmitting  antenna  and R x is  the  impedance  matched  receiving  antenna. Another 50 Ω receiving antenna is also designed for comparison. b , Patch antenna designed to match  the  impedance  of  the  matched  part  in a . c,d, Rectified  voltage  ( V r )  and  sensitivity  ( S ) comparison of 50 Ω and impedance matched receiving antenna attached to the 80 × 200 nm  SR 2 with  varying  the  rf  power  ( P rf )  at  2.45  GHz.  To  ensure  the  stable  measurement  of V r and corresponding S , the V r is measured after a waiting time of 5 seconds to reach the peak voltage and then averaged over 30 seconds. The standard deviation in V r and S values in rectenna measurement is less than 2% over time.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-99419f52-a161-47a4-a799-8bee945c0c64.jpg)

Fig. 3| Tuning of broadband and resonant recfication for designing SR-array. a , Experimental results of broadband rectification voltage ( V ) versus frequency ( ) response from a 40 f  100 nm 2 single SR and an array of ten SRs connected in series at rf power ( P rf ) of  20 dBm. The dashed rectangular boxes approximately show the region of broadband rectification, where the rectifition voltage is significant for the energy harvesting from 100 MHz to 3.5 GHz and 100 MHz to 6 GHz for the single SR and SR-array, respectively. b , Resonant and band-pass behavior of a 80  200 nm 2 single SR and an array of ten SRs connected in series, respectively, at P rf =  20 dBm. The rectangular  boxes  approximately  shows  the  regions  of  resonant  behaviour  (a  combination  of symmetric and anti-symmetric Lorentzian) and band-pass behaviour for the single SR and SRarray, respectively. c , Simulated phase diagram of the precession amplitude of the x -component

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-6d19167b-6589-4344-8ec0-7fba43bac237.jpg)

(  mx )  of  the  magnetization  (component  originating  the  TMR)  as  a  function  of  the  microwave frequency ( ) and current density amplitude ( f J ac ). d , Simulated results of the maximum precession  mx as a function of J ac for the 40  100 nm 2 single SR. e , Simulated ∆ m x as a function of   at f various J ac with  perpendicular  uniaxial  anisotropy  constant, K u =  0.419  MJ/m ,  revealing  the 3 transition  from  resonant  to  broadband  behaviour. f g , ,  Comparison  of  experimentally  observed spectrum emitted from the single ( ) and two series connected SRs ( f g ) excited by a rf signal ( I dc = 0 mA). h , Extracted 2 f peak power ( P 2f ) shows an enhancement in the case of SRs in series. The P 2f is calculated from the time-averaged data using the trace averaging function in the spectrum analyser over 5 sweeps.

Fig. 4  Demonstration of broadband low-power SR based energy harvesting module. a  ,  A schematic of the energy harvesting module, where the harvested voltage ( V r ) from the SR-array is first stored in the capacitor, which is stepped up to a high-voltage ( V step ~1.6  4V) using the boost converter to power the temperature sensor. The ON state of temperature sensor corresponds to V step &gt; 1.2 V. b , Rectified voltage ( V r ) from the SR-array at various rf powers ( P rf ) using 2.45 GHz and 3.5 GHz antenna. The rectified voltage at each P rf is recorded after 5 seconds waiting time to reach the  peak  voltage  and  then  averaged  over  next  30  seconds  to  ensure  the  stable  charging  of  the capacitor via the SR-array generated rectified voltage. The standard deviation in the measured V r is less than 4% over time, as shown in Supplementary Fig. 11a.  The dashed line at V r ~ 20 mV is the  threshold  voltage  for  the  ON  state  of  boost  converter. c ,  Discharging  of  stored V step when connected to different loads in the EHM after turning off the rf power source. Here, the SR-array is first irradiated by two rf sources, 2.45 GHz and 3.5 GHz antenna, simultaneously at P rf =  25 dBm for at least 30 seconds to reach the peak voltage, and then the rf sources are turned off for measuring the discharging V step . The V step represents a standard deviation of less than 1% over time, as shown in Supplementary Fig. 11b. c , Discharging of stored V step when connected to different loads in the EHM after turning off the rf power source. Here, the SR-array is first irradiated by two rf sources, 2.45 GHz and 3.5 GHz antenna, simultaneously at P rf =  25 dBm for at least 30 seconds to reach the peak voltage, and then the rf sources are turned off for measuring the discharging V step . The V step represents a standard deviation of less than 1% over time, as shown in Supplementary Fig. 11b.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-a3ecb0d0-33f9-45fa-951a-196eea6ba962.jpg)

Fig. 5| Comparison of the rectification performance of Schottky diodes, SR-array and SRrectenna. a b , , The conversion efficiency,  ( a ) and sensitivity, S ( b ) at 2.45 GHz with varying the rf power ( P rf ). The dashed rectangular boxs show the region of rf power, where the performance of SR-array and SR-rectenna surpass that of Schottky diodes. The Schottky diodes and a single SR are integrated with an antenna to form a rectenna, whereas the SR-array directly harvests the rf energy from the wireless source. The performance of both the Schottky diodes are well matched with literature (Supplementary Fig. 14). All rectifiers are under the same ambient condition.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-96f81b71-0775-45ac-9834-416b01522dfe.jpg)

## Supplementary Information

## Supplementary Note 1. Optimization of interfacial anisotropy

The optimization of MgO (tunnel barrier)/CoFeB (free layer) interface in magnetic tunnel junction (MTJ) based spin-rectifiers (SRs) are required to manipulate the interfacial perpendicular anisotropy (IPA) and to achieve a high rectification sensitivity without the magnetic field and dc bias. For this purpose, the CoFeB ( t CoFeB) and MgO ( t MgO) thicknesses are varied to tune the IPA. We have observed a canted equilibrium direction due to moderate IPA at t CoFeB = 1.9 nm and t MgO = 1 nm, a high tunneling magnetoresistance (Fig. S1a), a resonance frequency close to  2 GHz (Fig. S1b) and a high sensitivity (Fig. S1c) using an elliptical dimension of 80 × 200 nm . 2

Fig. S1| Optimization of 80 × 200 nm 2  SRs for the zero-bias and zero magnetic field operation with varying the thicknesses of the free layer ( t CoFeB) and spacer layer ( t MgO). a , Tunnelling tunneling magnetoresistance (TMR) versus t MgO. b , Resonance frequency ( ) corresponding to the f maximum rectification value at P rf =  30 dBm with varying t MgO. c , The rf senstivity ( S = V P r / rf ) at  the  resonance frequency at P rf =  30 dBm as a function of t MgO, where V r is  the  maximum rectification value corresponding to the resonant frequency. The thickness of the free layer ( t CoFeB) displayed inside the plots is varied from 1.7 to 1.9 nm.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-d6c590dd-9dee-46b9-a927-62c70e90da50.jpg)

## Supplementary Note 2. Optimization of the canted equilibrium direction of SRs

Beside the thickness optimization, we have optimized the junction dimensions of SRs for further controlling the equilibrium direction of the out-of-plane tilted magnetization at zero field. The canted equilibrium angle primarily arises from the competition of in-plane shape anisotropy and  out-of-plane interfacial anisotropy. The  canted  equilibrium  angle  (  tilt ) between  the magnetization of the in-plane reference layer and that of the tilted free layer can be estimated by 1,2

$$R ( \theta _ { u l t } ) = \frac { R _ { _ { P } } + R _ { _ { A P } } } { 2 } + \frac { R _ { _ { P } } - R _ { _ { A P } } } { 2 } \cos ( \theta _ { u l t } )$$

Here, R (  tilt ), R P,  and R AP  are  the  tilted,  parallel,  and  anti-parallel  configuration  resistances, respectively. We have seen a significant canted equilibrium angle of 48  and 80  for the small-  dimension devices: 40 × 100 nm  to 80 × 200 nm  (Fig. S2a,b), respectively. For bigger dimension 2 2 devices (&gt;100 × 250 nm ), the out-of-plane anisotropy is significantly low, favoring in-plane easy2 axis anisotropy. Also, the zero-field TMR (  R zb = ( R zb -R p )/ R p ) reaches 30  40% in some of the 80 × 200 nm 2 SR devices as shown in Fig. S2b, resulting into a high rectified voltage. Here, R zb is the zero-field resistance.

Fig  S2|  Resistance  ( R ) versus  applied  magnetic  field  ( µ H 0 app ). The  canted  equilibrium anisotropy  of  SRs  due  to  competition  between  in-plane  shape  anisotropy  and  out-of-plane interfacial anisotropy is inferred from samples with a size of 40 × 100 nm  ( 2 a ) and 80 × 200 nm 2 ( b ).

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-45809b86-449e-43cd-a282-34990beae026.jpg)

## Supplementary Note 3. Optimization of SR size for the best rf sensitivity

The SRs with dimensions 80 × 200 nm  using 2 t CoFeB = 1.9 nm and t MgO = 1 nm showed the best TMR of ~75% and a resistance-area product of ~5 Ω µm 2 (Fig. S3a). Other characteristics are a  canted equilibrium angle of 79  95  (Fig. S3b), a ferromagnetic resonance (FMR) frequency  close to 2.4 GHz and a maximum sensitivity of  1000 mV mW -1  at zero bias and zero magnetic field (Fig. S3c,d).

a

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![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-8b8a2b3a-6dba-499f-8d9d-aa502964802b.jpg)

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Fig. S3| Optimization of SR dimentions varying from 40 × 100 nm 2  to 140 × 350 nm 2 . a , TMR and the resistance-area (RA) product versus the junction dimension. b , Canted equilibrium angle (  tilt ) calculated from Eq. (S1). The 120 × 300 nm  SR shows a canted equilibrium angle close to 2 in-plane anisotropy. c , Zero-bias rectification signal voltage ( V ) at a rf power of P rf =  30 dBm. d, Frequency ( ) of peak rectification voltage ( f V r ) and corresponding zero bias rf senstivity ( S = V P r / ) at P rf =  30 dBm. Here, P = P rf × (1-| S 11 | 2 ), is the input power including the losses from the VNAbased S 11 measurement. The error bars in a, b, and d are the standard deviation after averaging for 5 SR devices.

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## Supplementary Note 4. Contribution of the voltage controlled magnetic anisotropy

The voltage controlled magnetic anisotropy (VCMA) is known to enhance the rf senstivity in  MTJs when the electric field is applied across the device, as it excites the voltage induced ferromagnetic resonance leading to an extra antisymmetric term in the rectification spectra 3,4 . The amplitude of VCMA can be calculated as the variation of the effective magnetic anisotropy energy ( E p ) per unit volume of the free layer from the area under the hysteresis loop M H ( ) 3,4

$$E _ { P } = \, \int _ { 0 } ^ { M _ { x } } H _ { x } \left ( M _ { x } \right ) d M _ { x } = \frac { 1 } { 2 } \, M _ { s } \, H _ { P }$$

where H P is the effective perpendicular anisotropy field. Figure S4a shows the change in H P with the dc bias, calculated by the shift in the conductance vs. magnetic field hysteresis loops with dc voltages. Figure S4b shows the extracted VCMA coefficient from the slope of Fig. S4a using Eq. (S2).The  variation  of  the  VCMA  coefficient  observed  in  SR-devices  with  the  junction  size  is attributed to the trade-off between the effective magnetic anisotropy, the energy barrier between parallel and anti-parallel states, and the thermal stability of the MTJs 5,6 ,  which also influences TMR and perpendicular magnetic anisotropy (PMA). The MTJs with a size of 80 × 200 nm 2 demonstrated  the  best  optimization  of  these  parameters,  resulting  in  the  best  combination  of VCMA, PMA, and TMR. Our systematic analysis demonstrates that optimizing the junction size, as well as the thickness of the free and MgO layers, is required to achieve canted anisotropy with a high VCMA coefficient and TMR.

a

Fig.  S4|  Voltage  controlled  magnetic  anisotropy.  a ,  Shift  of  perpendicular  anisotropic  field (  H P)  with  applied  dc  bias  voltages  ( V dc )  determined from the conductance vs. magnetic field plots. b , Extracted voltage-controlled magnetic anisotropy (VCMA) coefficient from the slope of Fig.  S4a  using  Eq.  (S2).  The  error  bar  shows  the  standard  deviation  after  averaging  for  5  SR devices.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-44dfa67b-426d-4df5-a055-e35a9cb2233b.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-2172a5bc-8af9-4da6-a821-cd83907d5ddf.jpg)

## Supplementary Note 5. Rectified voltage vs. rf power

Figure S5 shows the rectified voltage ( V r ) generated by the 40 × 100 nm  and 80 × 200 nm 2 2 SRs. The corresponding senstivity is shown in Fig. 1e of the main text. The V r of 80 × 200 nm  SR 2 saturates at a high P rf because of the achievement of large amplitude magnetization dynamics. In this regime, additional power is transferred to high order modes and then the sensitivity decrerases 7 as shown in Fig. 1e. The saturation voltage of the 40 × 100 nm  SR is significantly less because of 2 the  lower  senstivity  compared  to  80  ×  200  nm   SR  and  transition  of  resonant  to  broadband 2 rectification response as explained in the main text.

Fig.  S5|  Rectified  voltage  with  varying  rf  power. The  maximum rectified  voltage  ( V r )  as  a function of the input rf power ( P rf ). The voltage saturates at P rf &gt;  15 dBm for the 80 × 200 nm 2 SR, whereas slightly decreases at P rf &gt;  20 dBm for the 40 × 100 nm  SR. 2

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-fbf07ed6-e488-4970-95b3-3ccf6b501164.jpg)

## Supplementary Note 6. Calibration of the rf power in the probe station measurement

In the probe station measurement of the rectification, the impedance of the magnetic tunnel junction-based spin rectifiers is mismatched with the 50  cables and connectors of the probe station,  resulting  in  a  considerable  loss  of  rf  power  delivered  into  the  SR  devices.  In  order  to calibrate  the  actual  input  power  and  the  losses  due  to  an  impedance  mismatch  at  the  device interface, the rf power loss can be calculated using the S 11 measurement of the vector network analyser (VNA). Here, the S 11 parameter is measured in the VNA in logarithmic scale (dB) as a function  of  frequency  with  an  applied  power  of  0  dBm,  which  is  then  converted  to  reflection coefficient (| S 11 |) on a linear scale using the formula ( S 11,dB = 20 × log10 (| S 11 |). Here, the reflection coefficient represents the ratio of the amplitude (or voltage) of the reflected wave to the amplitude of  the  incident  wave.   The  rf  loss  can  be  calculated  using  | 8 S 11 | 2 ×  100%.  An  example  of S 11 measurement is shown in Fig. S6a, where the | S 11 | is measured as 0.616 ( S 11,dB =  4.10 dB on the log scale) at 2.45 GHz when a power of 0 dBm is applied from the signal generator, which is then converted to a rf power loss of | S 11 | 2 × 100% i.e., 38% at 2.45 GHz (Fig. S6b). In general, we measured many SR devices and found that the rf loss could vary from device to device in the range of 35-60%. Furthermore, the actual power received by the SRs can be calculated as P = P rf × (1|S11| 2 ), where P rf is the applied rf power.

Fig.  S6|  Power  calibration  for  the  probe  station  based  measurement.  a, The  linear  scale magnitude of the reflection coefficient ( S 11 ) measured in the VNA by scanning the frequency ( ). f b, The calculated rf power loss using the formula | S 11 | 2 × 100%.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-ad6bb2f0-4daf-4641-ab3e-0f6524851806.jpg)

## Supplementary Note 7. Matched antenna design and coupling of R x and T x antenna

The impedance of the on-chip SRs (80 × 100 nm 2 ) is measured using a vector network analyzer (VNA) in Fig. S7a. The drastic change in the impedance around 2.45 GHz is attributed to the involvement of connectors attached to the chip. However, the impedance evaluated before and after designing the matched antenna shows a robust value. We believe that the impedance matching  could  be  improved  by  designing  an  on-chip  impedance  matched  antenna.  The performance of the matched antenna is evaluated and illustrated in Fig. S7b. The antenna can cover the entire 2.4  2.5 GHz band with the reflection coefficient ( S 11 ) less than  10 dB as shown in Fig. S7b. The antenna is coupled with a high gain of 7.2 dBi in the far-field region, as shown by the radiation  3D  pattern  showing  the  gain  in  the  vertical  direction  in  Fig.  S7c.  For  the  near-field measurement  (from  2.5  cm  to  10  cm),  the  coupling  between  the  receiving  and  transmitting antennas  is  directly  estimated  by  the  VNA  measurement.  Fig.  S7d  shows  the  received  power measured in the VNA and corresponding peak power at 2.45 GHz is plotted in Fig. S7e. The received power at 2.45 GHz is very close to the power applied from the signal generator ( P rf ) in the near field region of 2.5 cm.

Fig. S7| Antenna design and properties. a , Real part of the measured impedance (Re Z) of the on-chip SR from the reflection coefficient ( S 11 ) measured by the VNA as a function of frequency ( ). f b ,  Reflection coefficient of designed antenna showing high return loss at 2.45 GHz. c ,  3D radiation pattern of the designed antenna using a computer simulation technology (CST) software. The color bar shows the gain on the dBi scale. d , The received power, measured in the VNA as a function of input rf power at 2.5 cm, shows the coupling between transmitting ( T x ) and receiving ( R x ) antenna. e , The received power at 2.45 GHz as a function of input power ( P rf ).

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-7aa71399-a941-4ff4-a463-ef66f34edab8.jpg)

## Supplementary Note 8. A single SR for the bandwidth up to 6 GHz

The SR rf bandwidth is tunable with the magnetic field. By applying a magnetic field of 98 mT, a large bandwidth of 0.1-6 GHz using a single 40 × 100 nm  SR is observed as shown in 2 Fig. S8a. Figure S8b shows the peak resonant voltage with respect to the external magnetic field applied in-plane along the major axis of the elliptical SRs, which shows that the device works in a wide range of magnetic field. However, the rectification voltage response starts to degrade at &gt; 120 mT, because of a low TMR as the free layer becomes magnetically harder at high magnetic field (Fig. S2).

Fig. S8| Rectification response of 40 × 100 nm 2  with respect to external magnetic field. a , Broadband rectification response (shown by the dashed rectangular box) of rectified voltage (V) versus frequency ( ) in single SR up to f  3 GHz at zero magnetic field and up to  6 GHz using a magnetic field of 98 mT and P rf =  20 dBm in a 40 × 100 nm 2 SR. Here, the magnetic field is applied in-plane along the major axis of the elliptical SR. b , Variation of the peak rectified voltage ( V r ) at P rf =  20 dBm with varying the in-plane magnetic field strength ( µ H 0 app ) along the major axis of the elliptical SR.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-ef72334d-9ad9-4edb-a41f-d66ede8623c7.jpg)

## Supplementary Note 9. Scaling of output voltage versus number of SRs connected in series

As the number of spin rectifiers increases, the peak response becomes saturated (Fig. S9a). However, the rectification bandwidth (BW) increases as the number of SRs increases (Fig. S9b). The rectification BW is defined when the peak rectification voltage drops to half.

Fig. S9 | Scaling of SRs in series. a , Peak rectified voltage ( V r ) versus the number of spin rectifiers connected in series P rf =  20 dBm. b , Rectification bandwidth (BW) at which the peak rectification voltage drops to half.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-8606b844-5c28-48a1-98f9-987133fca9cc.jpg)

Supplementary Note 10. Effect of VCMA and perpendicular uniaxial anisotropy constant

Fig. S10| Simulation results for a 40 x100 nm 2  single SR. a, Micromagnetic simulations of the VCMA driven enhancement of magnetization precession amplitude of the x -component (  m x ) as a function of the rf current density ( J ac ) using the same parameter of Fig. 3c in the main text. b, Resonance frequency ( ) at Jac = 0.1 MA/cm  as a function of the perpendicular uniaxial anisotropy f 2 constant Ku. The dashed blue lines highlight   ~ 3.5 GHz, corresponding to f K u = 0.419 MJ/m , 3 which is used in Fig. 3e for matching the experimental data. The lines are the guide for the eye.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-86d1a351-4f4c-4802-b654-7890743c033e.jpg)

## Supplementary Note 11. Stability of spin-rectifier arrays for long-time operation

For testing the stability of SRs and energy harvesting module (EHM), we have stored the voltage from the SR and EHM module in the nanovoltmeter for one hour. When the source of wireless signal is available consistently in the ambient contion at P rf &gt;  20 dBm, the SR as well as EHM show a very consistent voltage as shown in Fig. S11. This shows that there is no chargingdischarging, desynchronization of coupled SRs in series and microwave heating effect that affects the SRs performance over time.

Fig. S11| Stability test with turning the wireless signal on countinuouly for one hour. a , SR rectification voltage ( V r ) at P rf =  25 dBm. b , EHM voltage ( V step ) at P rf =  25 dBm. The dashed lines show the minimum V r and V step required to turn on the dc to dc booster and 1.6 V lightemitting diode, respectively.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-72df5579-4038-4af5-9970-eb51c72e2158.jpg)

## Supplementary Note 12. Signal-to-noise-ratio and noise equivalent power

The signal-to-noise ratio (SNR) determines the performance of the rf rectifiers in the noisy environment (Fig. S12a). The SNR is calculated using the formula, SNR = P signal / P noise , where the P signal = V dc,signal 2 / R dc and P noise = V dc,noise 2 / R dc .  Here, The V dc,signal and V dc,noise are the dc voltage recorded in the nanovoltmeter when the 2.45 GHz wireless signal is ON and OFF, respectively. R dc is the dc resistance of the devices. Moreover, the noise equivalent power (NEP) of a single SR is estimated, which characterises the noise level in quadratic detectors. The NEP is defined as the ratio of noise voltage and sensitivity. For the measurement of noise voltage ( V noise ) in the spectrum analyser, we have followed the measurement setup of diode mixing noise in ref 3. We have chosen one of the SRs with a sensitivity &gt; 1000 mV/mW. The NEP is plotted as a function of the rf power in Fig. S12b. The NEP of  2 × 10 -12 W Hz 0.5 (Fig. S12b) at P rf = 0.1 µW (-40 dBm) and I dc = 0 mA is very close to  8 × 10 -12 W Hz 0.5 or 3.6 × 10 -12 W Hz 0.5 as measured in the SRs with a dc bias . In general, a low NEP is observed in the SRs because of the high sensitivity, which leads to 3 a good SNR even in SR-array configurations.

Fig. S12| Noise perfomance of the SR-technology. a , Signal-to-noise ratio (SNR) with varying the rf power ( P rf ). The error bar defines the fluctuation of the dc voltages ( V dc,signal and V dc,noise ) over multiple cycles, when the 2.45 GHz wireless signal is ON and OFF, respectively. b , Noise equivalent power (NEP) versus varying rf power. The error bar defines the standard deviation in the value of noise voltage at low frequencies.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-bbcd7f7d-cece-496d-9bee-eb409c398a61.jpg)

## Supplementary Note 13. Comparison SR with the other rectifiers

Fig. S13| Comparison of our SR (2.45 GHz) with other SR (1.2 GHz) for P rf &lt;  20 dBm. The observed efficiency (  )  as  a  function  of  rf  power  ( P rf )  is  2  3 orders higher from the previous reported efficiencies for the other spin-rectifiers with a combination of resonant  and broadband 3 7 behaviour. The lines are the guide for the eye.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-05803b3c-2b12-49c8-adc4-7daf47302d8b.jpg)

Fig. S14| Efficiency comparison. Comparison of efficiency reported in various highly-efficient and  low-powered  2.45  GHz  state-of-the-art  rectifiers 9-20 (without  and  with  taking  the  antenna efficiency effect).

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-f2580c45-db1a-4418-8b4a-b4185323c804.jpg)

## Supplementary Note 14. SR device and EHM setup details

Fig. S15: Device and experimental setup details. a , Co-planar waveduide ground-signal-ground design over the SR devices (circled by a dashed red line) for the rf coupling. b , Chip, where the SR-array is connected to the rf connector, which provides a rf or dc output. The SR-devices are connected by the wirebonds. c , Output of the chip shown in b is connected across the capacitor (through black and red leads), which is connected to the input of dc to dc boost converter. A multimeter is connected to check the output of the SR-array (24.1 mV). The amplified voltage output (~3.9 V correponding to the input of 24.1 mV) from the boost converter charges the sensor, which shows a temperature of 23.4  C. 

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01160v1-figure-64f5b7b7-2e0a-41f3-80f3-b596b3348a94.jpg)

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Raghav Sharma Tung Ngo Eleonora Raimondo Anna Giordano Junta Igarashi Butsurin Jinnai Shishun Zhao Jiayu Lei Yong-Xin Guo Giovanni Finocchio Shunsuke Fukami Hideo Ohno Hyunsoo Yang
Nanoscale spin rectifiers for harvesting ambient radiofrequency energy
Radiofrequency harvesting using ambient wireless energy could be used to
reduce the carbon footprint of electronic devices. However, ambient
radiofrequency energy is weak (less than -20 dBm), and thermodynamic limits and
high-frequency parasitic impedance restrict the performance of state-of-the-art
radiofrequency rectifiers. Nanoscale spin rectifiers based on magnetic tunnel
junctions have recently demonstrated high sensitivity, but suffer from a low
a.c.-to-d.c. conversion efficiency (less than 1%). Here, we report a sensitive
spin rectifier rectenna that can harvest ambient radiofrequency signals between
-62 and -20 dBm. We also develop an on-chip co-planar waveguide-based spin
rectifier array with a large zero-bias sensitivity (around 34,500 mV/mW) and
high efficiency (7.81%). Self-parametric excitation driven by
voltage-controlled magnetic anisotropy is a key mechanism that contributes to
the performance of the spin-rectifier array. We show that these spin rectifiers
can wirelessly power a sensor at a radiofrequency power of -27 dBm.