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## PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0220320

## Molecular  Beam  Epitaxy  Growth  and  Doping  Modulation  of  Topological Semimetal NiTe2

Liguo Zhang 1, a) , Dapeng Zhao , Xiangyang Liu , Junwen Lai , Junhai Ren , Qin Wang , 1 2 2 1 1 Haicheng Lin 1, a) , Yan Sun 2, a) , Katsumi Tanigaki 1

1 Beijing Academy of Quantum Information Sciences, Beijing 100193, China 2 Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China a Authors to whom  correspondence  should be addressed: zhanglg@baqis.ac.cn, linhc@baqis.ac.cn and sunyan@imr.ac.cn

In this study, high-quality thin films of the topological semimetal phase NiTe2 were prepared using molecular beam epitaxy (MBE) technique, confirmed through X-ray diffraction with pronounced Laue oscillations. Electrical transport experiments reveal that thick films have properties similar to bulk materials. By employing co-deposition, we introduced either magnetic or non-magnetic elements during the growth of thinner films, significantly altering their electrical properties. Notably, magnetic element Cr induces long-range ferromagnetic ordering, leading to the observation of significant anomalous  Hall  effect  in  NiTe2  thin  films.  The  Hall  conductivity  remains  nearly constant well below the Curie temperature, indicating the correlation with the intrinsic topological nature of the band structure. Theoretical first principles band calculations support the generation of the Weyl semimetal state in the material through magnetic doping. These findings pave  the  way  for  exploring  more  magnetic Weyl  semimetal materials and related low-dimensional quantum devices based on topological semimetal materials.

Transition  metal  dichalcogenides  (TMDs)  exhibit  diverse  crystal  and  electronic structures, leading to excellent physical properties, making them highly sought-after for future development in electronic devices 1-3 . Among them, 1 T -NiTe2 is a prototypical layered material categorized to type-II topological semimetals, hosting the Dirac points

1

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## PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0220320

near  the  Fermi  surface  and  chiral  anomaly,  which  is  ideal  for  studying  topological physics 4-7 . Theoretical calculations suggest that 1 T -NiTe2 exhibits attractive magnetic properties in its monolayer  and that its band structure can be tuned via substrate strain , 8 9 pressure 10 , or doping, potentially also leading to superconductivity 11 . The presence of topological states is crucial for the nontrivial topological superconductivity, sparking significant  experimental  interest 11,12 . Additionally,  NiTe2 promises  in  van  der Waals (vdW) heterostructures, such as serving as a barrier layer for Cooper pairs in Josephson junctions 13,14 .  Recent advances include the synthesis and study of bulk NiTe2 and its doped  counterparts 4,7,15,16 ,  revealing  superconducting  signatures 15 ,  topological  band structures 4,7 , etc.  Moreover,  strides  have  been  taken  towards  achieving  its  lowdimensional forms, including nanowires and flakes 17-19 . The flakes prepared through chemical vapor deposition have showed solid stability in ambient conditions 18 , making it an attractive candidate for constructing vdW heterostructure.

Considering the promising potential of low-dimensional NiTe2, it is crucial to explore high-quality  and  controllable  materials.  Molecular  beam  epitaxy  (MBE)  provides precise control over thickness, composition, and carrier concentration. However, ideal preparation conditions for NiTe2 are not yet fully researched 6,20 .  Additionally, obtaining ultra-thin layers through mechanical exfoliation of single crystals remains challenging. These issues hinder a comprehensive understanding of the properties of ultrathin NiTe2. The recent progress in synthesizing pure 1 T -NiTe2 thin films on SiC substrates by MBE reveals essential differences between thin layers and bulk materials . Moreover, MBE 6 is  well-suited  for  studying  the  doping  effects.  Especially  through  the  method  of magnetic doping, the introduction of ferromagnetic order into topological insulators breaks  time-reversal  symmetry  and  results  in  phenomena  such  as  the  quantum anomalous Hall effect and Axion insulator states 21,22 . Naturally, introducing ferromagnetic  order  by  introducing  magnetic  elements  could  transform  topological semimetals  into  magnetic  Weyl  semimetals,  and  thereby  offer  large  possibilities  to expand the current research on magnetic Weyl semimetal materials 23,24 . In this work,

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## PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0220320

we utilized MBE to fabricate 1 T -NiTe2 thin films, investigating transport properties and achieving controlled elemental doping modulation. The observed long-range ferromagnetic order and anomalous Hall effect originating from the electronic band structure  are  further  validated  through  theoretical  calculations.  Our  findings  may contribute to the future device applications based on ultra-thin NiTe2.

NiTe2 can exist in various distinct phases in low dimensions . Among them, 1 6 T -NiTe2 is a layered material with a crystal structure belonging to the P -3 m 1 space group. Its monolayer unit has a sandwich-like structure, with  a nickel  atom layer  sandwiched between two tellurium layers. The lattice parameters for 1 T -NiTe2 phase are a = b = 3.843 Å and   = 5.265 Å, as shown in Figs.1(a) and (b), depicting the top and side views. c We employed an MBE co-deposition method to prepare the 1 T -NiTe2 thin films in an ultra-high vacuum chamber (pressure below 2×10 -9 Torr) on a high-temperature treated SrTiO3(111) substrate. The reflection high-energy electron diffraction (RHEED) pattern in Fig.1(c) attests to the high  quality of the substrate surface with  structure reconstruction. High-purity (99.999%) Ni and Te sources were used, with a Ni:Te flux ratio of approximately 1:10 to ensure Te-rich condition and a growth rate of about 0.6 nm/min.  The  substrate  temperature  was  maintained  at  360°C  during  the  growth, followed by a 30-minute annealing process. The RHEED pattern in Fig. 1(d) shows distinct stripes, indicating an in-plane crystal constant of about 3.85 Å (see supplementary material Fig. S1) , and confirms the high film quality. X-ray Diffraction (XRD) analysis, shown in Fig. 1(e), displays a single preferred orientation with no other phases. The diffraction peaks indicate a crystal constant of about 5.284 Å along c -axis and an orientation of (0 0 0 1). The XRD curve also shows Laue oscillations around the (0  0  0  2)  peak,  suggesting  high  film  quality. A  zoomed  2  view  around  this  peak, scanned with longer acquisition time, is shown in Fig. 1(f). The data is simulated (red solid line) according to the equation 25 :

$$e \equiv \equiv \equiv \frac { \sin ( \frac { Q N c } { 2 } ) } { \sin ( \frac { Q c } { 2 } ) } ^ { 2 } \quad ( 1 )$$

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01029v1-figure-66ce2b3c-f59e-4857-8362-8eba7e74a8c7.jpg)

## PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0220320

where Q = 4  sin(  )/  is the reciprocal space vector, N is the number of unit cells along the out-of-plane direction and c is the lattice constant. The fitting curve is simulated considering peak position 2  = 33.914° and thickness of 195.5 Å ( N = 37).

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01029v1-figure-322c5f13-22c5-4fff-84b6-fb714459500e.jpg)

Fig.  1  (a)Top  and  (b)  side  view  of  the  crystal  structure  of  1 T -NiTe2.  (c-d)  RHEED patterns of SrTiO3 (111) surface (c) and 1 T -NiTe2 thin film (d) taken along the [11 2 ] direction of the substrate. (e) 2 θ ω XRD pattern of 1 T -NiTe2 thin film. (f) XRD pattern around  the  peak  (0  0  0  2),  and  the  red  solid  line  represents  the  stimulated  Laue oscillations, with corresponding dash lines indicating the indices of the Laue oscillation.

We first measured the temperature dependent resistivity ( RT )  of a 19.55 nm thick NiTe2 film. The RT curve showed a metallic behavior and is fitted well with the BlochGrüneisen (BG) formula 16 :

$$\text{BG} ) \text{ formula} ^ { 1 6 } & \colon \\ \rho ( T ) & = \rho _ { 0 } + \alpha \left ( \frac { T } { \theta _ { D } } \right ) ^ { n } \int _ { 0 } ^ { \theta _ { D } } \frac { x ^ { n } } { ( e ^ { x - 1 } ) ( 1 - e ^ { - x } ) } d x \ ( 2 )$$

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## PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0220320

where the first term,  0 represents temperature-independent residual resistivity while the second term accounts for the electric interactions. In the second term,  is a constant related to interaction strength and  D is the Debye temperature. We found that n =2.8 close to n =3, providing a well-fitted result akin to its bulk behavior 16 . It indicates that the resistivity of NiTe  thin film is dominated by the 2 s d -electron-phonon scattering 16 . The corresponding  D is  approximately  187  K,  lower  than  that  of  its  bulk  material reported as 230 K, being indicative of the reduced dimensionality 26 . Remarkably, the film resistivity is below 30 · cm across the entire temperature range, comparable to the previously reported value for a 50 nm thick film grown on a GaAs substrate via MBE 20 , indicating high quality of the film. Dot plots in Figs. 2(b) and (c) illustrate sheet resistivity ( R □) and Hall resistivity versus magnetic field ( B ) curves at 2 K for the 19.55 nm film.  Hall  measurements  exhibited  multiband  conductivity,  resembling  those  of NiTe2 bulk  materials  and  some  other  topological  semimetals 27,28 . Assuming  the contribution from two-carrier model, expressed as 28 :

where n e ( n h )  and  𝑒 (  ℎ )  are  the  carrier  density  and  mobility  of  electrons  (holes), respectively. Fitting results yield nh =3.30×10 21 cm -3 , ⁡ n e =1.79×10 21 cm -3 ,  ℎ =78cm 2 ·V -1 ·s -1 and  e =107 cm  ·V 2 -1 ·s -1 . However, as the thickness decreased further, a linear Hall effect response emerged in the pristine NiTe2 film with 10 nm (red curve in Fig. 2(f)), indicating that one band dominants the transport behavior in thinner film. The above results indicate the band structure evolution with varying the films' thickness. The thicker film in our study is similar to the bulk material and the Dirac cone is located near the Fermi level and two-carrier contribution dominates the Hall effect, which is consistent with bulk material study 27 . With decreasing the film thickness, a previous angle-resolved photoemission spectroscopy study reported that the MBE growth ultrathin films have a band topology evolution and films above five-layer (~ 2.7 nm) are in

$$\mathbf r \text{ bulk materials and some other topological semimetals} ^ { 2 7, 2 8 } \text{ Assuming} \\ \text{iution from two-carrier model, expressed as} ^ { 2 8 } \text{:} \\ \rho _ { y x } = \frac { 1 } { e } \frac { ( n _ { h } \mu _ { h } ^ { 2 } - n _ { e } \mu _ { e } ^ { 2 } ) + \mu _ { h } ^ { 2 } \mu _ { e } ^ { 2 } B ^ { 2 } ( n _ { h } - n _ { e } ) } { ( n _ { h } \mu _ { h } + n _ { e } \mu _ { e } ) ^ { 2 } + \mu _ { h } ^ { 2 } \mu _ { e } ^ { 2 } B ^ { 2 } ( n _ { h } - n _ { e } ) ^ { 2 } } B \text{ (3)} \\ \rho _ { x x } = \frac { ( n _ { h } \mu _ { h } + n _ { e } \mu _ { e } ) + ( n _ { e } \mu _ { e } \mu _ { h } ^ { 2 } + n _ { h } \mu _ { h } \mu _ { e } ^ { 2 } ) B ^ { 2 } } { ( n _ { h } \mu _ { h } + n _ { e } \mu _ { e } ) ^ { 2 } + \mu _ { h } ^ { 2 } \mu _ { e } ^ { 2 } B ^ { 2 } ( n _ { h } - n _ { e } ) ^ { 2 } } \text{ (4)} \\ \mathbf e n e \text{ (n) and } \mu _ { e } \text{ (mu) are the carrier density and mobility of electrons (h} \\ \text{ctively.  Fitting results } \text{ yield } n _ { h } = 3. 3 0 { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times  { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times} { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } \text{ (n _ { h } ) \text{ and } \mu _ { e } \text{ (mu _ { h } ) \text{ are the carrier density and mobility of electrons (h} \\ \text{ctively.  Fitting } \text{ results } \text{ yield } n _ { h } = 3. 3 0 { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \null } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \null } { \times } { \times } { \times } { \times  { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \null } { \times } { \times } { \times } { \times { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { 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 } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \rix } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \times } { \$$

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01029v1-figure-3e7f5937-4683-4b5a-b465-d03033495dc5.jpg)

PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0220320

the Type-II Dirac semimetal phase. Compared to the bulk material, in the five-layer thin film the Dirac cone is shifted above the Fermi level due to the reduced dimensionality , 6 which is the possible reason for the observation of the hole carrier dominating Hall effect in our 10 nm NiTe2 film.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01029v1-figure-c521bac4-b577-4094-93e4-122c561bf03b.jpg)

Fig. 2 (a-c) Electrical transport properties of 19.55 nm NiTe2 thin films. (a) The RT curves at zero field, with the red line showing the BG equation fit. (b) R □ (B) curves at 2 K, with blue open circles for experimental data and the red line for the two-carrier model fit. (c) Hall resistivity curves at 2 K, with green open circles for experimental data and the red line for a two-carrier model fit. (d-f) Electrical transport properties of 10 nm NiTe2 (red), Ni0.99In0.01Te2 (blue), and Ni0.99Cr0.01Te2 (black) thin films. (d) The RT curve at zero field, with normalized resistance at 300 K. (e-f) R □(B) (e) and Hall resistivity (f) curves at 2 K.

Doping is widely used in semiconductors and topological insulators to modulate the electronic structure and magnetism of materials 29,30 . In and Cr have been used to substitute cations in topological insulators, achieving control over the band structure 31

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01029v1-figure-4de02bcb-21a1-4d0d-b50b-7d288ac68fec.jpg)

## PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0220320

and magnetism 21 . To study the modulation effect in thin NiTe  films via dilute elemental 2 doping, Cr and In dopants are selected to substitute Ni sites. We prepared the NiTe2 films by co-evaporating the doped  elements during growth.  The low  doping concentration maintains the film's structure, as confirmed by the RHEED patterns as shown  in  the  supplementary  material  Fig.  S1.  Figures  2(d)-(f)  compare  electrical transport properties of 10 nm films of pristine NiTe2, Ni 0.99 In0.01 Te2, and Ni0.99 Cr0.01 Te2, demonstrating  significant  modulation  effects  of  elemental  doping.  The RT curves exhibit  a  notable  resistance  decreasing  with  decreasing  temperature.  In  order  to compare the RT relationship of these three samples, we plot the resistance as normalized at 300 K. The lowest normalized value drops from ~0.47 in the pure sample to 0.62 in the  In-doped  and  0.9  in  the  Cr-doped  samples,  indicating  the  existence  of  strong impurity scattering. The doped samples also show  a significant decrease in magnetoresistance ( MR ), defined as MR =( R B ( )-R (0))/ R (0), as seen in Fig. 2(e). The Crdoped  film  exhibits  negative MR with  a  butterfly-shaped  curve,  attributed  to  a ferromagnetic  order. As  shown  in  Fig.  2(f),  Hall  measurements  reveal  significant changes in carrier density: the In-doped sample retains hole dominance with decreasing density.  In  contrast,  the  Cr-doped  sample  changes  towards  the  electron  dominance. Consistent with the MR curve being indicative of the ferromagnetic emergence, the Hall effect reveals a square-shaped hysteresis loop. The above measurements indicate that Cr doping induces long-range ferromagnetic order in the films, whereas In doping does not. This can be understood as follows: Cr ions have unfilled d -electrons, resulting in a net magnetic moment, whereas In ions have fully filled d -electrons and cannot cause a net magnetic moment. We also performed the superconducting quantum interference devices (SQUID) characterization on the Cr-doped thin films and the magnetic order is confirmed.  (See  the  detail  in  supplementary  material  Fig.  S2).  The  above  results highlight the substantial impact of dilute doping on the electrical transport and magnetic properties in NiTe2 thin films.

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## PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0220320

Fig. 3 Electrical transport properties of Ni 0.99 Cr0.01 Te2 thin film with a thickness of 10 nm. (a)Temperature dependent Hall resistivity curves with perpendicular magnetic field applied. (b) Temperature dependence of the anomalous Hall resistivity and conductivity. (c)  Angle  dependent  Hall  resistivity  curves  at  2  K,  with  the  inset  illustrating  the transport measurement configuration with respect to the field orientation. (d) Angle dependent MR measurements at 2 K.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01029v1-figure-20602734-8f32-4e1a-b8e5-34e62c5b2283.jpg)

To clarify the origin of the anomalous Hall effect in Cr doped film, we measured the Hall effect across a wide range of temperature, as shown in Fig. 3(a). Assuming a simple model, the Hall effect has two contributions:

𝑅 𝐻 = 𝑅 𝐻 𝑜 +𝑅 𝐻 𝐴𝐻𝐸 (5) Where the first term on the right of the equation represents the ordinary Hall effect (OHE), determined by the carrier concentration, and the second term represents the

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01029v1-figure-bb8bb5e0-813c-400d-990f-b2bc167d6df2.jpg)

## PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0220320

anomalous Hall effect (AHE). All the Hall resistivity curves show a linear background with nearly identical slopes across temperatures, indicating that the carrier density is almost temperature-independent. The anomalous component's hysteresis loop become narrow with an increase in temperature and nearly disappeared at 200 K, which we regard as the Curie temperature. The SQUID measurement data is consistent with the transport  measurement  results  (see  Fig.  S2  in  the  supplementary  materials).  This temperature is  comparable  to  that  of  Co Sn S   compound,  a  typical  magnetic Weyl 2 3 3 semimetal.  By  extracting  the  data  from  Fig.  3(a),  we  find  that  the  anomalous  Hall conductivity remains nearly unchanged well below the Curie temperature, indicating an intrinsic band structure origin for the observed AHE. Additionally, a series of Hall resistivity  and  longitudinal  resistivity  were  measured  at  various  fixed  tilt  angles,  , between the external B and normal direction to the substrate (illustrated in the inset of Fig. 3(c)). The results show that the anomalous Hall resistance changes negligibly small with varying the angle and is only suppressed near  = 90°, suggest that the film has a visible out-of-plane anisotropy magnetization, consistent with the SQUID magnetization results under both out-of-plane and in-plane magnetic fields. Regarding the longitudinal resistivity, R xx (where  R xx = R xx ( B )-R xx (0) in fig. 3(d)), we can see that almost all the films show a negative sign, which indicate a magnetic scattering suppression by magnetization. However, near  = 90°, the  R xx turns to be positive and this seems to be related to the more gradual changes and disorder of magnetization. The angle-dependent  R xx does not demonstrate the typical chiral anomaly characteristic of Weyl semimetals, which typically results in an extra conductivity contribution, leading to  a  negative magnetoresistance when the current and B are  non-perpendicular with each other. This absence could stem from the Fermi level remaining distant from the Weyl  nodes,  while  contributions  from  additional  bulk  bands  may  mitigate  the appearance of the chiral anomaly in the transport behavior. Further accurate energy band engineering via static gating or more precise doping may be required to address this issue.

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01029v1-figure-02876086-3b4e-4dec-91ba-b6ce02e39bf4.jpg)

## PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0220320

Fig. 4 (a) Electronic band structure of pristine NiTe2 along high symmetry lines. (b-c) Electronic  band  structure  of  NiTe   with  Zeeman  field  of  0.02 2 B  and  0.04 B  , respectively. The red and blue color represent the spin direction. (d) Energy-dependent anomalous Hall conductivity with the consideration of spin splitting, corresponding to electronic band structure in (c).

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01029v1-figure-ac1f5877-c350-4820-8302-60abb35b44de.jpg)

To  understand  the  mechanism  of  the AHE  in  the  Cr-  doped  sample,  we  made  a systematically  first  principles  calculations  for  the  evolution  of  band  structures  and corresponding  intrinsic  anomalous  Hall  conductivity 32 . Fig.  4  shows  the  energy dispersion of NiTe2 along high symmetry lines. Owing to the C 3 rotation symmetry with respect to the z-axis, one pair of type-II Dirac points 33-35 locate on the Γ-A direction in the  whole  Brillouin  zone  near  the  Fermi  level,  as  seen  in  Fig.  4(a).  To  see  the magnetization effect on the band structure, we projected the Bloch wavefunction into maximally localized Wannier functions 36 and include the Zeeman field into the effective model  Hamiltonians.  From  Figs.  4(b)  and  (c),  one  can  see  that  each  fourfold degenerated Dirac point splits into one pair of doubly degenerated Weyl points after the consideration  of  magnetization,  and  the  spin  splitting  increases  along  with  the

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01029v1-figure-1b99184d-0ff2-43a6-8c61-f0d44fa303fc.jpg)

magnitude  of  the  Zeeman  field.  With  consideration  of  magnetization  along  the  zdirection, a non-zero finite anomalous Hall conductivity appears, as seen in Fig. 4(d). From energy-dependent anomalous Hall conductivity, one can easily see an obvious peak near the Fermi level. Interestingly, the position of this peak in energy space is almost equal to the location of the Weyl points. So, it implies that the anomalous Hall effect in magnetic doped NiTe2 originated from the topological phase transition from Dirac semimetal to Weyl semimetal. Therefore, based on previous reports 6 and general topological band structure theory 37 , we believe that type-II Dirac semimetal in NiTe2 can transform to Weyl semimetal via magnetic doping.

In summary, as a type-II topological semimetal, NiTe2 has rarely been researched in its low-dimensional  forms.  We  prepared  high-quality  NiTe2  thin  films  using  MBE.  In thicker  films,  NiTe   exhibited  properties  similar  to  its  bulk  material.  However,  in 2 thinner  films,  electrical  transport  studies  revealed  significant  changes  in  its  band structure. Notably, co-deposition of dopant elements could enhance modulation effects. Specifically,  Cr  doping  resulted  in  a  visible  out-of-plane  anisotropic  magnetization signal, and  its anomalous  Hall  effect  remained  nearly  constant  across  a  wide temperature  range,  potentially  due  to  the  intrinsic  topological  nature  of  the  band structure. Theoretical  calculations further supported that introducing magnetic order into NiTe2 could transform it into a magnetic Weyl semimetal. These results provide an important pathway and reference to the intriguing quantum states in low-dimensional NiTe2 and its further developments in quantum devices.

## SUPPLEMENTARY MATERIAL

See  supplementary  material  for  more  details  on  RHEED  patterns,  magnetoelectrical transport and SQUID measurements.

## ACKNOWLEDGMENTS

![image](https://ac.marcodsn.me/arxiv-markdown-images/2408.01029v1-figure-5828c6ba-039b-4232-87f2-0c1679c273ad.jpg)

This work is supported by the National Natural Science Foundation of China (Grant Nos. 12204043, 12174027, 12304208), Innovation Program for Quantum Science and Technology (Grant No. 2023ZD0300500).

## AUTHOR DECLARATIONS

## Conflict of Interest

The authors have no conflicts to disclose.

## Author Contributions

Liguo Zhang and Dapeng Zhao contribute equally to this work.

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## PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0220320

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Liguo Zhang Dapeng Zhao Xiangyang Liu Junwen Lai Junhai Ren Qin Wang Haicheng Lin Yan Sun Katsumi Tanigaki
Molecular Beam Epitaxy Growth and Doping Modulation of Topological Semimetal NiTe$_2$
In this study, high-quality thin films of the topological semimetal phase
NiTe$_2$ were prepared using molecular beam epitaxy (MBE) technique, confirmed
through X-ray diffraction with pronounced Laue oscillations. Electrical
transport experiments reveal that thick films have properties similar to bulk
materials. By employing co-deposition, we introduced either magnetic or
non-magnetic elements during the growth of thinner films, significantly
altering their electrical properties. Notably, magnetic element Cr induces
long-range ferromagnetic ordering, leading to the observation of significant
anomalous Hall effect in NiTe2 thin films. The Hall conductivity remains nearly
constant well below the Curie temperature, indicating the correlation with the
intrinsic topological nature of the band structure. Theoretical first
principles band calculations support the generation of the Weyl semimetal state
in the material through magnetic doping. These findings pave the way for
exploring more magnetic Weyl semimetal materials and related low-dimensional
quantum devices based on topological semimetal materials.