## Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

(August 1 st , 2019)

Hao Lee 1 , S. Deshmukh 2 , Jing Wen 3,4 , V.Z. Costa 1 , J. S. Schuder 5 , M. Sanchez 5 , A. S. Ichimura 5 , Eric Pop 2,6,7 , Bin Wang 3 , and   A. K. M. Newaz 1

- 1 Department of Physics and Astronomy, San Francisco State University, San Francisco, California 94132, USA 2 Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA School  of  Chemical,  Biological  and  Materials  Engineering,  University  of  Oklahoma,  Norman,  Oklahoma
- 3 73019, United States

Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics

- 4 and Electronic Engineering, Harbin Normal University, Harbin 150025, P. R. China
- 5 Department of Chemistry and Biochemistry, San Francisco State University, San Francisco, California 94132, USA

6 Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA 7 Precourt Institute for Energy, Stanford University, Stanford, California 94305, USA

## Abstract

Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials  for  a  wide  range  of  electronic  and  optoelectronic  devices.  Realizing  practical  electrical  and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrier heights governing the transport through a metal-TMD-metal junction is critical. But, there is a knowledge gap; it is not clear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few layered (1-5) MoS2 immobilized on ultra-flat conducting Au surfaces (root mean square (RMS) surface roughness &lt;0.2 nm)  and  indium  tin  oxide  (ITO)  substrate  (RMS  surface  roughness  &lt;0.7  nm)  forming  a  vertical  metal (conductive-AFM tip)-semiconductor-metal device. We have observed that the current increases as the number of layers increases up to 5 layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier  heights  for  different  layers  and  observed  that  the  barrier  height  decreases  as  the  number  of  layers increases. Using density functional theory (DFT) calculation, we successfully demonstrated that  the barrier height decreases as the layer number increases. By illuminating the TMDs on a transparent ultra-flat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating  negative  photoconductivity.  Our  study  provides  a  fundamental  understanding  of  the  local electronic  and  optoelectronic  behaviors  of TMD-metal junction,  which  depends on  the  numbers of  TMD layers, and may pave an avenue toward developing nanoscale electronic devices with tailored layer-dependent transport properties.

## INTRODUCTION

Layered transition metal dichalcogenides (TMD) are van der Waals crystal and provide the tantalizing prospect of  miniaturizing semiconductor devices to truly  atomic  scales  and  accelerating  the  advances  of  many twodimensional  (2D)  optoelectronic  devices. 1-6   These  atom  thick  layered  TMDs  demonstrate  some  unique properties that includes 2D confinement, direct band-gap nature 7 , varying band structure with layer thickness, 79 and weak screening of charge carriers enhancing the light-matter interactions 7, 8, 10 . High photon absorption (  ~10% for visible light and  ~40% for ultraviolet photons) 7, 11 , and exciton formation (a hydrogenic entity made of an e-h pair) 7, 11 make TMDs very attractive for different optoelectronic applications 1, 12-16  including sensitive photodetectors, 12, 17-19  energy harvesting devices, 20-22  monolayer light emitting diodes (LEDs), 13, 15, 16 single photon sources, 23-27  and nanocavity lasers. 28

Electronic and optoelectronic devices require a metal junction for injection and collection of current. Interfacial charge  transport  properties  play  a  critical  role  in  governing  the  current  injection  or  collection  in  a  metalsemiconductor junction. One property that controls charge transport across the junction is the barrier height due to the conduction band offset between the TMD and metal. Although significant progress has been made in demonstrating many different types of TMD-based devices, it is not clear how the barrier heights change with TMD thickness at the few layers level (1L-5L). 9  One standard technique to elucidate the barrier height is through the measurement of the electron affinity by ultraviolet photoelectron spectroscopy (UPS). However, UPS requires a large sample size that is challenging to prepare by exfoliation of MoS2.

One possible alternative experimental route employs surface probe microscopy (SPM) to study local electrical transport and optoelectronic properties of few layer TMDs. Since these 2D TMDs materials conform to the surface roughness of the substrate, SPM requires that the sample resides on a surface with sub-nanometer roughness (root mean square (RMS) surface roughness &lt; 1 nm). To understand the dependence of the barrier height on TMD layer thickness, we performed conductive atomic force microscopy (CAFM) and photocurrent atomic force microscopy (PCAFM) of few-layer MoS2 samples immobilized on ultra-flat transparent indium tin oxide (ITO) and template-stripped Au conducting surfaces.

To probe the layer dependence of interfacial transport properties, CAFM and PCAFM measurements of few layer MoS2 samples with thickness varying from monolayer (1L-MoS2) to 5 layers (5L-MoS2) were performed. To understand the effect of the tip on the electrical and optical properties, Pt/Ir tips and platinum silicide (Pt/Si) tips were used for both CAFM and PCAFM measurements. Similar results were observed for both Pt/Ir tips and Pt-Silicide (Pt/Si) tips. Here we present the results obtained using Pt/Si tips unless mentioned otherwise.  We have studied three MoS2 samples on Au substrate and three MoS2 samples on ITO coated substrate. All samples behaved similarly with respect to their electronic and optoelectronic properties. Several important features characteristic of the metal substrate/MoS2/Pt-Si (tip) heterojunctions were observed; (i) the current  increases  as  the  layer  number  increases;  (ii)  the I-V curve  analysis  employed  Fowler-Nordheim tunneling theory to give barrier heights that depended on the number of layers; (iii) the barrier height also depends on the type of the conducting substrate; (iv) the current was significantly lower along the edges of the MoS2 basal plane; and (v) few layer MoS2 samples demonstrates negative photoconductivity when illuminated by blue light (460 -490 nm). The barrier heights for 1L-5L MoS2 on Au (111) surface were calculated with DFT and followed the observed experimental trends.

## RESULTS AND DISCUSSION:

Figures 1(a) and 1(b) show an optical image and the coresponding contact mode AFM height profile image of exfoliated MoS2 on a freshly peeled template-stripped (TS) Au surface. Template-stripped Au substrate was prepared following standard procedures 29-32  (see Methods for details). The 1L-5L layer MoS2 sheet structure is clearly  observed in the contact mode AFM heigh profile image, Fig. 1(b). Before carrying out CAFM and PCAFM measurements, the RMS roughness of the TS-Au and ITO substrates were measured and found to be 0.2 nm and 0.7 nm, respectively. The ultra-smooth nature of the TS-Au surface is very close to the surface roughness  of  hexagonal  boron  nitrides  ( h -BN), 33   a  layered  material  commonly  used  as  an  atomically  flat substrate. For comparison, the RMS roughness of the external surface of the thermally evaporated (TE) gold

Figure 1: MoS2 sample on a template-stripped Au substrate. (a) Optical image of a MoS2 sample. The dotted square region is studied using AFM and CAFM. (b) The height profile AFM image of the marked area (white dotted-square) in Fig. (a) measured by AFM contact mode.  Region of different layer number is shown. The scale bar is 500 nm. (c) Histogram of the height distribution (surface roughness measured by AFM) of the template-stripped Au substrate (TS-Au, ~150 nm thickness), as thermally evaporated Au (TE-Au)  substrate  of  thickness  ~150  nm  and  ITO  substrate.  The  Au  for  the  template  stripping  was deposited  on  a  single  crystal  Si  wafer.  The  root  mean  squared  (RMS)  value  of  the  surface  roughness measured was ~ 0.18 nm for template-stripped Au and ~1.8 nm for as deposited substrate. Inset-left: tapping mode AFM image of the template-stripped Au surface. Inset-right: tapping mode AFM image of 20 nm ITO coated substrate on a single crystal quartz substrate. The area of the scanned region is 1  m  1  m.  The scale bar is 500 nm for left image and 200 nm for the right image. A Gaussian fit to the height data provides full width at half maxima (FWHM) ~ 0.3 nm for the template-stripped Au, ~ 5 nm for as deposited Au and ~ 1 nm for the ITO substrate. The surface roughness profile of template-striped Au is very similar to surface roughness observed for h -BN (see text).

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00609v1-figure-a08a29b9-9ac0-4a5b-a525-0b2555afff9d.jpg)

layer was 2 nm,. The left and right insets to Fig. 1(c) show tapping mode height profile images of the TS-Au and ITO coated surfaces, respectively (see supplementaly information Fig.S1 for an AFM image of a TE coated AU surface). Fig.1(c) also compares the height histograms of the TS and TE gold surfaces confirming that template stripping produces a uniformily smooth surface with a narrow full-width-half-maximum (FWHM) distribution while the distribution and roughness of the TE surface are an order of magnitude larger. We have found that employing an ultra-flat conducting surface as a substrate for exfoliated TMD is critical to observe consistent electrical and optoelectronic properties of atomically thin MoS2 crystals.

Now we discuss the electronic transport behavior of the MoS2 sample on template-stripped Au substrate. Fig. 2(a) shows schematically the experimental setup used to measure the current under an applied voltage. The bottom inset shows the configuration of the sample with respect to the SiO2/Si substrate. The MoS2 sample was directly micro-exfoliated onto the TS-Au surface. Fig. 2(b) presents the DC current map measured with a

Figure 2: Layer dependent conductive AFM measurement of MoS2 sample on a template-stripped Au substrate.  (a)  (Top)  Schematic  diagram  of  the  experimental  setup  (not  to  scale)  used  in  CAFM measurements. The current is measured by a current-amplifier. (a) (Bottom) Schematic diagram of the sample  (see  text  for  details).  The  MoS2  sample  was  directly  exfoliated  on  a  template-stripped  Au substrate. (b) The conductive AFM data for the sample, whose height profile is shown in Fig.1 (b). (c) Current-voltage ( I V) curves for different layers obtained by averaging the current for a flake. (d) The value of the barrier height measured by taking the average of every pixel. The red line is a guide to the eye. The error bar presents the standard deviation of the barrier heights.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00609v1-figure-8cf4e09b-d331-4cf5-a5b1-9bc063978899.jpg)

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0.4 V bias of the sample whose height profile is shown in Fig. 1(b). The spatial current map clearly demonstrates that the current increases as the layer number increases. This feature becomes clearer in the I-V curves obtained by averaging over a specific layer number as shown in Fig.2(c). Almost zero current was observed for the Au substrate outside the MoS2 flake (Fig.1b). We attribute the non-conducting behavior observed for the gold substrate to two factors, the small force constant (~0.2 N/m) of the cantilever and a non-conductive film, mainly hydrocarbons, that adsorbed to the gold surface within a short period of time after revealing the fresh TS surface. 34  The force constant of the tip was too small to scratch the surface contaminants to make a direct contact to the Au surface.

Since  the  I-V  curves  exhibit  non-linear  behavior,  we  used  Fowler-Nordheim  (FN)  tunneling  theory  to understand the layer-dependent electronic transport behavior. FN theory has been widely used to explain the tunneling of an electron between two metals separated by an insulator or semiconductor. 35-38  The tunneling current through a thin semiconductor is given by

$$I ( V ) = \frac { A _ { e } q ^ { 3 } m V ^ { 2 } } { 8 \pi h \Phi _ { B } d ^ { 2 } m ^ { * } } \exp \left ( - \frac { 8 \pi \sqrt { 2 m ^ { * } } \Phi _ { B } ^ { 3 / 2 } d } { 3 h q V } \right )$$

where 𝐴𝑒 is the effective contact area, ℎ is Planck's constant, 𝑞 is the electron charge, 𝑑 is the thickness of the barrier, Φ𝐵 is  the  barrier  height, 𝑚 is  the  electron  mass,  and 𝑚 ∗ is  the  electron  effective mass inside the

Figure 3: Layer dependent conductive AFM measurement of MoS2 sample on a physical vapor deposited ITO film. (a) Contact mode AFM image of the height profile of a sample on ITO coated wafer. The layer numbers are shown. The scale bar is 500 nm. (b) The conductive AFM data for the sample for 1.5 V. (c) I-V curves for different layers obtained by averaging the current. (d) Calculated average value of the barrier height measured by taking the average of every pixel. The red line is a guide to the eye. The error bar presents the standard deviation of the barrier heights.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00609v1-figure-2c6d9cf2-0b77-4162-bd71-35b8a03006ce.jpg)

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00609v1-figure-0dadcfb8-ad18-4e21-99e1-694df6511290.jpg)

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semiconductor. We used 𝑚 ∗ 𝑚 ~0.35 and 0.53 for monolayer MoS2 and bulk MoS2 (&gt;1L), respectively. 35  If the layer thickness 𝑑 is known, we can apply Eq. (1) to determine the barrier height from the  I V curves. Since the conducting substrate has surface roughness much smaller (~ 0.2 nm) than the thickness of monolayer MoS2 (~ 0.7 nm), the separation between the bottom conducting surface and AFM tip remain constant for a specific layer number.

By using a multiple of 1L-MoS2 (~0.7 nm) as the layer thickness, the barrier heights for different numbers of layers were calculated as shown in Fig.2(d). Interestingly, we observed that the barrier height decreases as the layer number increases. This suggests that the current increases as the number of layer increases, which is clearly evident both in the current map in Fig. 2(b) and the I-V curves in Fig.2(c). Our observations contrast with the findings of Son et. al. , 35 who reported that the barrier height increases as the number of MoS2 layers increases for a sample immobilized on a rough ITO surface.

To understand the impact of the substrate on the barrier heights, we also studied MoS2 samples on ultra-flat ITO coated single crystal quartz substrate.  We found that commercially available ITO coated substrate has high surface roughness and is not suitable for SPM measurement (see supplementary Figure S1 for details). The indium tin oxide (ITO) thin films were deposited by physical vapor deposition onto transparent Z -cut quartz substrates (see Methods for details). An AFM surface profile image of the substrate is shown in the right inset to Fig.1c. The surface RMS roughness of this transparent ITO coated sample is ~ 0.7 nm.

Figure 4. DFT calculated interfacial electronic structure of the Au/MoS2 . (A) Schematic of the MoS2/Au interface and band alignment. (B) DFT-calculated electron affinity of MoS2 with different thickness. (C) DFT-calculated Schottky barrier at the interface of Au/MoS2 with varied the thickness of MoS2 and interfacial spacing. The black curve shows the values from DFT-optimized structures, while the red, blue and green ones show the values when the structures are artificially displaced by 1, 2 and 3 Å further way from the Au surface, respectively.

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00609v1-figure-f4f660ae-634b-435c-8134-f03fb774f60d.jpg)

The height profile of one MoS2 sample on ITO substrate is shown in Fig. 3(a). The current map for 1L-5L MoS2 at 1.5 V bias voltage is shown in Fig. 3(b) and clearly shows that the current increases with increasing layer number. The corresponding I-V curves are shown in Fig.3(c), which demonstrate that the current level increases, though minimally compared to MoS2 on TS-Au, as the layer number increases from 1L to 5L. Note that the current level decreases above five layers. One possible explanation to account for this observation is that the barrier height does not change significantly with MoS2 layer number greater than 5 layers, whereas, the sample thickness increases linearly. Hence the tunneling current decreases significantly as the sample thickness ( 𝑑 ) icreases as predicted by the FN-Tunneling model. Further study is necessary to understand the details of the electrical transport properties of MoS2 samples thicker than 5 layers. Fowler-Nordheim tunneling theory was used to calculate the barrier heights as shown in Fig. 3(d). Although, the layer number dependence of the barrier height for MoS2 on ITO is very similar to the samples immobilized on a TS-Au substrate, the barrier height on the ITO substrate is much higher than the barrier heights of MoS2 on the TS-Au substrate, which is likely caused by different work function of ITO and Au in the presence of multilayer MoS2.

Another important feature observed in these MoS2 sample (both on TS-Au and ITO substrate) is that the edges are  less  conducting  compared to the middle of the basal plane. The current drops by 2-5 times as the tip approaches the edge compared to regions far from the edges. The low current edges are especially visible, both in Fig.2(b) and  Fig. 3(b), as dark lines that trace the boundaries between adjacent layers. The current profile along three different edges are presented in the supplement Fig. S2. Our estimate of the width of that insulating

![image](https://ac.marcodsn.me/arxiv-markdown-images/1908.00609v1-figure-ccc8b4c9-6bfc-4aa9-a049-aecffc45484d.jpg)

Figure 5: Photoconductive AFM measurement of sample on an ultra-flat ITO coated single crystal quartz. (a) Contact mode AFM image of the height profile of the sample. The monolayer region is marked. (b) The IV curve when the sample is illuminated by blue light (black circle) and in the dark (red circle). (c) The photoconductive AFM image of the sample at V=1 V. The image is obtained by subtracting the illuminated photoconductive AFM image from the conductive AFM image measured in the dark.

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edge is ~20 nm, which is comparable to tip Pt/Si tip width. This suggests that the insulating region is smaller than Pt/Si tip and is beyond our measurement capabilities with our current AFM probe and setup.

To explain our experimental results, density functional theory (DFT) calculations were performed to explore the  interfacial  electronic  structure  of  1L-5L  MoS2  on  a  Au(111)  surface  (Fig.4A).  Figure  4B  depicts  the calculated electron affinity ( 𝜒𝑒 ) of isolated MoS2 layers, which shows an incremental increase of the electron affinity (lower conduction band minimum) with increased layer number. The electron affinity reaches a plateau at about 4 layers. Figure 4C shows the calculated Schottky barrier, which has been calculated as 𝜙𝐵 = 𝑊 - 𝜒𝑒 , where 𝑊 is  the  work  function  of  gold.  The  calculated  work  function  is  shown  in  Figure  S3  and  shows  a systematic decrease with layer thickness for the optimized structures. Fig. 4c also shows the effect of increasing the interfacial distance between the MoS2 layers and substrate. The imposed interfacial separation accounts for the possibility that the experimental interfacial spacing may not be exactly the same as the DFT-optimized ones (black curve in Fig.4C) due to the corrugation of the Au surface as well as contaminants at the interface. The calculated Schottky barriers for an interlayer spacing of 1-3 Å between Au and MoS2 shows the general trend of decreasing barrier with increasing layer number, although 𝜙𝐵 reaches a plateau after 3 layers, which is more in line with the experimental results.

Finally, we discuss the optoelectronic behavior of exfoliated 1L-5L MoS2 sample on an ultra-flat ITO substrate. The MoS2 (1L-5L) samples were immobilized on a transparent ITO substrate. The AFM stage was mounted on an inverted Zeiss microscope. The MoS2 was illuminated through the quartz substrate with an LED source (X-Cite  110), which employed a dichroic filter to select the excitation wavelength range of 460-490 nm. The excitation light was guided by a microscope objective (x20, NA~0.75) to the sample. The beam area was ~10  m with optical power density P ~ 4 mW/  m 2 . The height profile of the sample is shown in Fig. 5(a) where different layer regions are marked. The corresponding I-V curve for 1L-MoS2 is shown in Fig. 5(b). Surprisingly, the current  decreases  as  the  sample  is  illuminated  by  460-490  nm  photons  demonstrating  negative photoconductivity. Note that the change in photocurrent ( Δ𝐼 𝑃𝐶 ) become larger as we increase the bias voltage. The difference in current under illumination Δ𝐼 𝑃𝐶 (= 𝐼 𝑙𝑖𝑔ℎ𝑡 -𝐼𝑑𝑎𝑟𝑘 ) for 𝑉𝑑𝑠 = 1 V is shown as a spatial map in Fig. 5(c). The spatial map was made by subtracting the AFM current image acquired without illumination from the  one  illuminated  with  blue  light  and  clearly  shows  that  the  current  decreased  under  illumination. Another interesting feature is that Δ𝐼 𝑃𝐶 becomes more negative as the layer number increases. The observation of negative photoconductivity of single crystal MoS2 nano-sheet is an anomalous photoresponse compared to regular positive photoconductivity behavior observed for planar structured TMDs. 2, 4, 11, 12

Negative photoconductivity of MoS2 nano-sheet connected by two metal electrodes in a planar or horizontal configuration was observed previously and the effect was attributed to the strong many-body interactions in MoS2. 39,  40   This  many-body  related  negative  photoconductivity  in  planer  MoS2  device  configuration  has transient  nature  with  lifetimes  on  the  order  of  trions  (~picoseconds).  On  the  other  hand,  negative photoconductivity observed in our vertical metal/semiconductor/metal device structure is non-transient or time-independent, which suggests that the origin of negative photoconductivity in our devices is completely different than planar device configurations. One possible explanation is that the excited electron and holes after optical illumination in MoS2 modify the barrier height, which therefore changes the tunneling current. Strong negative photoconductivity measured across the basal plane suggests that the barrier height increases due to optical  illumination,  which  in  turn  reduces  the  tunneling  current.    Because  photoconductivity  is  a  critical parameter applied to optoelectronics, further study is necessary to elucidate the origin of this DC negative photoconductivity.

## CONCLUSIONS:

In  conclusion,  electrical  and  optoelectronic  properties  of  1L-5L  MoS2  samples  residing  on  two  different atomically flat conducting surfaces are probed by using CAFM and PCAFM measurements. We observed four important features of electrical and optoelectronic properties of MoS2 nanosheets measured perpendicular to the basal plane. First, Fowler-Nordheim tunneling theory shows that the barrier heights correlates with the number of layers; the barrier height is highest for the monolayer and then monotonically decreases as the layer number increases. By using DFT calculations, we attributed this observation to the decrease of the electron affinity  as  the  layer  number  increases.  Second,  the  1L-5L  MoS2  barrier  height  depends  on  the  type  of  the conducting substrate underneath the sample; gold has a lower barrier height than ITO. Third, the edges of MoS2 are less conducting than the basal plane. And fourth, negative DC photoconductivity was observed by illuminating  the  sample  with  blue  light  ( 𝜆~ 460-490  nm).  Our  study  revealed  the  interfacial  electrical  and optoelectronic properties while in contact with an ultra-flat conductor and can lead to the development of nanoscale optoelectronic devices with tailored properties.

## ACKNOWLEDGEMENT:

The authors acknowledge the support from San Francisco State University (SFSU), the Center for Computing for Life Sciences at SFSU and to the NSF for instrumentation facilities (NSF MRI-CMMI 1626611). H.L, V.Z. C. and A.K.M.N. acknowledge the support from the National Science Foundation Grant ECCS-1708907 and Department  of  Defense  Award  (ID:  72495RTREP).  The  computational  research  used  the  supercomputer resources of the National Energy Research Scientific Computing Center (NERSC)  and the OU Supercomputing Center for Education &amp; Research (OSCER) at the University of Oklahoma.  S.D. and E.P. acknowledges support from the Stanford Non-volatile Memory Technology Research Initiative (NMTRI) and partial support from SRC grant 2532.001.

## METHODS:

Template-stripped gold substrate: Prime grade silicon (100) wafers were cleaned with a solution of water, ammonium hydroxide, and 30 wt% hydrogen peroxide in a ratio of 4:1:1 at a temperature of ~70  C for ten minutes (Standard Clean-1). The wafers were then rinsed with copious deionized water, dried under argon, and then placed in a bell jar. The bell jar was evacuated to a base pressure of 10 -7  torr and then 150 nm of gold was thermally evaporated onto the silicon at a rate of 5 Å/s. After the wafers were removed from the bell jar, precut silicon pieces with dimensions 1 cm x 1 cm were adhered to the gold surface with Devcon 2-Ton  Epoxy. To dry  the  epoxy  and  make  a  strong  attachment,  the  diced  wafer/epoxy/deposited-Au-film  were  kept  under pressure for 24 hours. The pressure was created by a block of heavy metal (5~7 pounds). Finally, the diced wafer was peeled/stripped using a razor blade. To avoid organic contamination of the freshly peeled gold surface, micro-exfoliated MoS2 flakes from a bulk sample was transferred by direct contact with the gold surface within ~ 5 minutes after template stripping.

Indium tin oxide (ITO) thin films preparation: ITO films were deposited with physical vapor deposition onto transparent Z-cut quartz substrates. The films were sputtered from an as-purchased ITO target in a 10

mTorr Ar ambient at 65 W DC plasma deposition power at room temperature, with a deposition rate ≈ 3 nm/min. In this work, we have employed 20 nm thick ITO coated film. The samples were thermally annealed at 400 C to reduce the sheet resistance (~220  square).

Conducting AFM (CAFM) and photoconductive AFM (PC-AFM) measurements: CAFM and PC-AFM measurement  were  conducted  using  a  JPK  Nanowizard ®  4a  Bioscience  integrated  on  an  inverted  Zeiss Fluorescence  microscope.  JPK  conductive  AFM  module  was  used  to  conduct  CAFM  and  PC-AFM measurements. The total AFM system was mounted inside a JPK acoustic enclosure, which was also optically opaque,  Hence  the  electrical  measurement  was  conducted  in  a  totally  dark  environment.  For  PC-AFM measurement, the light was guided by a liquid light guide from an LED light source (X-Cite  110 LED) into a microscope  objective  (x20,  NA~0.75).  The  blue  illuminating  light  was  filtered  by  a  Zeiss  dichroic  filter (Excitation BP 470/40).   AFM images were analyzed and plotted using both Gwyddion software package 41 and  JPK  data  processing  software  package.  The  Pt-Si  (PtSi-CONT,  resonant  frequency, f ~13  kHz,  force constants k ~0.2 N/m) and Pt/Ir (ANSCM-PC, f~ 12 KHz and k~0.2 N/m ) probes tips were purchased from Nanoandmore USA and Applied NanoStructures, Inc., respectively.

Density functional theory (DFT) calculations : The DFT calculations were performed within the framework of  plane-wave  method  as  implemented  in  the  VASP  code. 42   The  exchange  and  correlation  potential  was described by using the generalized gradient approximation (GGA) in the scheme of Perdew-Burke-Ernzerhof (PBE)  functional 43   and  the  projector-augmented  wave  method 44,  45   was  employed  to  give  the  numerical description of the ion-electron interaction. A cutoff energy of 400 eV was used to limit the plane-wave basis set. The equilibrium distances between the optimized Au substrate and MoS2 with different layer numbers were determined by calculating the minimums of the energy versus distance curves as relaxed under the stop criterion of 0.03 eV/Å per atom. A vacuum layer of 40 Å has been added to each composite structure of Au and MoS2 to simulate the surface configuration. The Van der Waals (vdW) correction based on the Grimme's DFT-D2 method 46  and dipole correction along the direction vertical to the interface have been included to calculate the total  energies  and  electrostatic  potentials,  which  can  provide  the  reasonable  atomic  configurations  at  the interfaces and the vacuum potentials.

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Hao Lee S. Deshmukh Jing Wen V. Z. Costa J. S. Schuder M. Sanchez A. S. Ichimura Eric Pop Bin Wang A. K. M. Newaz
Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals
Transition metal dichalcogenides (TMDs) are layered semiconducting van der
Waal crystals and promising materials for a wide range of electronic and
optoelectronic devices. Realizing practical electrical and optoelectronic
device applications requires a connection between a metal junction and a TMD
semiconductor. Hence, a complete understanding of electronic band alignments
and the potential barrier heights governing the transport through a
metal-TMD-metal junction is critical. But, there is a knowledge gap; it is not
clear how the energy bands of a TMD align while in contact with a metal as a
function of the number of layers. In pursuit of removing this knowledge gap, we
have performed conductive atomic force microscopy (CAFM) of few layered (1-5)
MoS2 immobilized on ultra-flat conducting Au surfaces (root mean square (RMS)
surface roughness <0.2 nm) and indium tin oxide (ITO) substrate (RMS surface
roughness <0.7 nm) forming a vertical metal (conductive-AFM
tip)-semiconductor-metal device. We have observed that the current increases as
the number of layers increases up to 5 layers. By applying Fowler-Nordheim
tunneling theory, we have determined the barrier heights for different layers
and observed that the barrier height decreases as the number of layers
increases. Using density functional theory (DFT) calculation, we successfully
demonstrated that the barrier height decreases as the layer number increases.
By illuminating the TMDs on a transparent ultra-flat conducting ITO substrate,
we observed a reduction in current when compared to the current measured in the
dark, hence demonstrating negative photoconductivity. Our study provides a
fundamental understanding of the local electronic and optoelectronic behaviors
of TMD-metal junction, and may pave an avenue toward developing nanoscale
electronic devices with tailored layer-dependent transport properties.