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[0396] As apparent from Table 2, the compositions of Examples exhibited excellent performance as compared with that of the compositions of Comparative Examples. 

[0397] <Preparation of Resist Composition> 

[0398] Components of Table 3 below were dissolved in a solvent consisting of a 40:60 mixture of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether, thereby obtaining solutions each of 1.8 mass % solid content. The solutions were each passed through a polytet› rafluoroethylene filterof0.03 µm pore size, thereby obtaining chemically amplified positive resist compositions (positive resist solutions). In Table 3, the amount of each of the com› ponents is expressed by the mass% based on the total solids. 

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[0399] <Evaluation of Resist (EUV)> 

[0400] Each of the above positive resist solutions was applied onto a silicon substrate having undergone a hexam› ethyldisilazane treatment by means of a spin coater, and dried by heating on a hot plate at 130° C. for 90 seconds. Thus, resist films of 50 nm average thickness were obtained. 

[0401] Each of the resist films was exposed to EUV light by means of an EUV exposure apparatus (wavelength=13.5 nm, NA=0.3). Immediately after the exposure, the film was baked on a hot plate at 110° C. for 90 seconds. The baked film was developed with a 2.38 mass % aqueous tetramethylammo› nium hydroxide solution at 23° C. for 30 seconds. After the development, the film was rinsed with pure water for 30 seconds and dried. Thus, a line and space pattern (line: space= 1: 1) was formed. 

[0402] (Sensitivity) 

[0403] The shape of cross section of obtained line and space pattern was observed by means of a scanning electron microscope (model S-9380 manufactured by Hitachi, Ltd.). The sensitivity (Eopt) was defined as an exposure amount in which a line of 35 nm width (line:space=l: 1) was resolved. 

[0404] (Shape of Pattern) 

[0405] With respect to the 35 nm line pattern (line:space=l: 1) realized in the irradiation amount exhibiting the above sensitivity, the shape of cross section thereof was observed by means of a scanning electron microscope (model S-4800 

manufactured by Hitachi, Ltd.). The observed shape was evaluated in the same manner as described above. 

[0406] (Roughness Characteristic; LWR) 

[0407] The above 35 nm line pattern (line:space=l:1) was observed by means of a scanning electron microscope (model S-9380, manufactured by Hitachi, Ltd.). The distance between actual edge and a reference line on which edges were to be present was measured at 50 points of equal intervals within 2 µm in the longitudinal direction of the pattern. The standard deviation of measured distances was determined, and 3a was computed therefrom. This 3a was denoted as "LWR(nm)." 

[0408] (Residue) 

[0409] The above 100 nm line pattern (line: space= 1: 1) was observed by means of a scanning electron microscope (model S-9260, manufactured by Hitachi, Ltd.). The evaluation marks o(good), ll(fair) and x(insufficient) were given when no residue was found at all in the substrate surface of the space portion, when 20% or less of the surface area of the space portion was covered by residue and when 50% or more of the space portion was covered by residue, respectively. 

[0410] The obtained evaluation results are given in Table 4 below. 

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[0411] As apparent from Table 4, the compositions of Examples also exhibited excellent performance upon expo› sure to EUV. 

[0412] <Preparation of Resist Composition> 

[0413] Components of Table 5 below were dissolved in a solvent consisting of a 40:60 mixture of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether, thereby obtaining solutions each of 1.8 mass % solid content. The solutions were each passed through a polytet› rafluoroethylene filterof0.03 µm pore size, thereby obtaining chemically amplified positive resist compositions (positive resist solutions). In Table 5, the amount of each of the com› ponents is expressed by the mass% based on the total solids. 

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