content_image/885998.jpg content_image/885999.jpg
<img src='content_image/885998.jpg'>

EB Writing Test 

Each of the resist compositions in Tables 4 and 5 was spin coated onto a silicon substrate, which had been vapor primed with hexamethyldisilazane (HMDS), and pre-baked on a hot plate at 110° C. for 60 seconds to form a resist film of 80 nm thick. Using a system HL-800D (Hitachi Ltd.) at a HV volt› age of 50 ke V, the resist film was exposed imagewise to EB in a vacuum chamber. 

Immediately after the image writing, the resist film was baked (PEB) on a hot plate at 90° C. for 60 seconds and developed in a 2.38 wt % TMAH aqueous solution for 30 seconds to form a pattern. 

<img src='content_image/885999.jpg'>

In the case of positive resist film, the resolution is a mini- mum trench size at the exposure dose that provides a resolu- tion as designed of a 120-nm trench pattern. In the case of negative resist film, the resolution is a minimum isolated line size at the exposure dose that provides a resolution as designed of a 120-nm isolated line pattern. It is noted that Examples 3-1 to 3-17 and Comparative Examples 3-1 to 3-3 are positive resist compositions, and Examples 3-18, 3-19 and Comparative Example 3-4 are negative resist compositions. 

The results are shown in Tables 4 and 5. 

