content_image/927801.jpg content_image/927802.jpg content_image/927803.jpg
Among these, as the radical polymerization initiator (I), compounds represented by the formulae (Il) to (I5) are pref› erable, and the compound represented by the formula (I 1) is particularly preferable. 

As the organic cation for M+, organic cations represented by the aforementioned formulae ( c-1) to ( c-3) are preferable, and an organic cation represented by the aforementioned formula ( c-1) is particularly preferable. 

As an another method of producing the polymeric com› pound of the present invention, a method in which by using a compound (IO) represented by general formula (IO) shown below as a radical polymerization initiator, a polymeric com› pound (polymeric compound precursor) which has a group represented by general formula (I-01) shown below on at least one terminal of the main chain, and thereby, a group "-(OCO)q-R$^{2}$-(CF$_{2}$)r-So$_{3}$-A+" (wherein q, R 2 , rand A+ are the same as defined above) is introduced on the termi› nal of the main chain of the polymeric acid precursor (that is, the hydrogen atom on the terminal of the main chain is sub- stituted with the aforementioned group). 

As the compound (IO), a known compound can be used. 

The introduction of the group "-(OCO)q-R $^{2 }$-(CF $_{2}$)r› S03 -A+" can be performed by a conventional method, and for example, can be conducted by reacting the polymeric com- pound precursor with a compound (i-02) represented by gen› eral formula (i-02) shown below. The reaction can be per› formed as in the method explained in relation to the method of producing a compound (I) of the third aspect. 

[Chemical Formula 22] 

<img src='content_image/927801.jpg'>

<img src='content_image/927802.jpg'>

<img src='content_image/927803.jpg'>

In the formulae, R1, Z, X, Q, p, q, R 2 , r, M+, B$^{1 }$and B$^{2 }$are the same as defined above. 

## <<Resist Composition>> 

The resist composition of the fifth aspect of the present invention includes a polymeric compound of the fourth aspect. By including the polymeric compound of the present invention, a resist film formed using the resist composition has an ability to generate acid upon exposure. 

Therefore, by including the polymeric compound of the present invention, a resist film can form a pattern using a component which exhibits changed solubility by the action of acid, even when the resist film does not contain an acid generator. In the case where an acid generator is included in addition to the polymeric compound of the present invention, sensitivity can be improved, as compared to the case where the polymeric compound of the present invention is not included. 

The resist composition of the present invention may be either a negative resist composition or a positive resist com› position. 

In the present specification, a resist composition which forms a positive pattern by dissolving and removing the exposed portions is called a positive resist composition, and a resist composition which forms a negative pattern by dissolv› ing and removing the unexposed portions is called a negative resist composition. 

The resist composition of the present invention can be used as a non-chemically amplified resist composition or a chemi- cally amplified resist composition. In the present invention, it is particularly preferable to use the resist composition as a chemically amplified resist composition in terms of forming a resist pattern with high sensitivity and high resolution. 

In general, a chemically amplified resist composition includes a base component which exhibits changed solubility in a developing solution under action of acid, and an acid generator component which generates acid upon exposure. When the resist composition is subjected to exposure, acid is generated from the acid generator component, and the action of that acid causes a change in the solubility of the base component in a developing solution. As a result, in the for› mation of a resist pattern, when a resist film obtained using the resist composition is subjected to selective exposure, the solubility in the developing solution of the exposed portions of the resist film changes (the solubility is increased in the case of positive tone, whereas the solubility is decreased in the case of negative tone) whereas the solubility in the devel› oping solution of the unexposed portions remains unchanged. By developing the resist film, a resist pattern can be formed. 

As described above, in a chemically amplified resist com› position, a base component which exhibits changed solubility in a developing solution under action of acid is generally used. 

(10) 

Here, the term "base component" refers to an organic com› pound capable of forming a film, and is preferably an organic compound having a molecular weight of 500 or more. When the organic compound has a molecular weight of 500 or more, the film-forming ability is improved, and a resist pattern of nano level can be easily formed. The "organic compound having a molecular weight of 500 or more" which can be used as a base component is broadly classified into non-polymers and polymers. In general, as a non-polymer, any of those which have a molecular weight in the range of 500 to less than 4,000 is used. Hereafter, a non-polymer having a molecular weight in the range of 500 to less than 4,000 is referred to as a low molecular weight compound. As a polymer, any of those which have a molecular weight of 1,000 or more is generally used. Hereafter, a polymer having a molecular weight of 1,000 or more is referred to as a polymeric com› pound. With respect to a polymeric compound, the "molecu› lar weight" is the weight average molecular weight in terms of the polystyrene equivalent value determined by gel perme› ation chromatography (GPC). Hereafter, a polymeric com› pound is frequently referred to simply as a "resin". 

(1-01) 

(i-02) 

The resist composition of the fifth aspect of the present invention may include the polymeric compound of the fourth aspect of the present invention as a resin component which constitutes a base component that exhibits changed solubility in a developing solution by the action of acid, or may include the polymeric compound of the fourth aspect of the present invention in addition to a resin component which constitutes a base component. That is, the polymeric compound con› tained in the resist composition of the present invention may be a polymeric compound which exhibits changed solubility 

