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edited by Yoshihiko Hirai, published by Frontier Publishing (issued in June, 2006), Japanese Patent No. 4109085, JP-A- 2008-162101, etc. 

[0351] <Method of Forming Pattern> 

[0352] The composition of the present invention is typi› cally used in the following manner. In particular, the compo› sition of the present invention is typically applied onto a support, such as a substrate, thereby forming a film. The thickness of the film is preferably in the range of0.02 to 10.0 µm. The method of application onto a substrate is preferably spin coating. The spin coating is performed at a rotating speed of preferably 1000 to 3000 rpm. 

[0353] For example, the composition is applied onto, for example, any of substrates ( e.g., silicon/silicon dioxide coat› ing, silicon nitride and chromium-vapor-deposited quartz substrate, etc.) for use in the production of precision inte› grated circuit devices, etc. by appropriate application means, such as a spinner or a coater. The thus applied composition is dried, thereby forming an actinic-ray- or radiation-sensitive film (hereinafter also referred to as a photosensitive film). The application of the composition to the substrate can be pre› ceded by the application of a heretofore known antireflection film. 

[0354] The resultant photosensitive film is exposed to actJmc rays or radiation, preferably baked (heated), and developed. A pattern of enhanced quality can be obtained by baking. From the viewpoint of sensitivity and stability, the baking temperature is preferably in the range of80 to 150° C., more preferably 90 to 130° C. 

[0355] As the actinic rays or radiation, there can be men› tioned, for example, infrared light, visible light, ultraviolet light, far-ultraviolet light, X-rays or electron beams. It is preferred for the actinic rays or radiation to have, for example, a wavelength of 250 mn or shorter, especially 220 mn or shorter. As such actinic rays or radiation, there can be men› tioned, for example, a KrF excimer laser (248 mn), an ArF excimer laser (193 mn), anF$_{2 }$excimer laser (157 mn), X-rays or electron beams. As preferred actinic rays or radiation, there can be mentioned EUV-rays or electron beams. EUV-rays are especially appropriate. 

[0356] The exposure in the condition that the interstice between the photosensitive film and a lens is filled with a liquid (for example, pure water) whose refractive index is higher than that of air, namely, liquid-immersion exposure may be carried out in the stage of the exposure to actinic rays or radiation. This liquid-immersion exposure can enhance the resolution. 

[0357] In the development step, an alkali developer is gen› erally used. As the alkali developer for the composition of the present invention, use can be made of any of alkaline aqueous solutions containing, for example, an inorganic alkali com› pound such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate or aqueous annnonia; a primary amine such as ethylamine or n-propylamine; a secondary amine such as diethylamine or di-n-butylamine; a tertiary amine such as triethylamine or methyldiethylamine; an alcoholamine such as dimethyletha› nolamine or triethanolamine; a quaternary ammonium salt such as tetramethylammonium hydroxide or tetraethylam› monium hydroxide; or a cycloamine such as pyrrole or pip› eridine. 

[0358] Appropriate amounts of an alcohol and a surfactant may be added to the alkali developer before use. The alkali concentration of the alkali developer is generally in the range 

of0.1 to 20 mass%. The pH value of the alkali developer is generally in the range of 10.0 to 15.0. 

[0359] The present invention will be described in greater detail below by way of its examples. However, the gist of the present invention is in no way limited to these examples. 

[0360] <Acid-Decomposable Resin> 

[0361] The following resins (A-1) to (A-5) were provided as the resin (P). 

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<img src='content_image/892494.jpg'>

<img src='content_image/892493.jpg'>

## EXAMPLE 

