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# c12) United States Patent Hatakeyama 

# (54) RESIST COMPOSITION AND PATTERNING PROCESS 

(75) Inventor: Jun Hatakeyama, Joetsu (JP) 

(73) Assignee: SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP) 

( *) Notice: Subject to any disclaimer, the term ofthis patent is extended or adjusted under 35 U.S.C. 154(b) by 88 days. 

(21) Appl. No.: 13/372,691 

(22) Filed: Feb.14,2012 

## (65) Prior Publication Data 

US 2012/0208127 Al Aug. 16, 2012 

## (30) Foreign Application Priority Data 

Feb. 15, 2011 (JP) ................................. 2011-029588 

(51) Int. Cl. 

<img src='content_image/885819.jpg'>

(52) U.S. Cl. CPC .............. G03F 71038 (2013.01); G03F 710043 (2013.01); G03F 710048 (2013.01); G03F 710757 (2013.01) 

( 58) Field of Classification Search None See application file for complete search history. 

## (56) References Cited 

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## U.S. PATENT DOCUMENTS 

<img src='content_image/885796.jpg'>

# (IO) Patent No.: US 9,164,383 B2 

# Oct. 20, 2015 (45) Date of Patent: 

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Hinsberg, William et al., "Extendibility of Chemically Amplified Resists : Another Brick Wall?", Proceedings of SPIE, 2003, pp. 1-14, vol. 5039. 

Jones, G.A.C. et al., "Fabrication of nanoscale ZnO field effect tran› sistors using the functional precursor zinc neodecanoate directly as a negative electron beam lithography resist", J. Vac. Sci. Technol., Nov./Dec. 2009, pp. 3164-3168, vol. 27(6). 

Ridaoui, Hassan et al., "Direct ArF laser photopatterning of metal oxide nanostructures prepared by the sol-gel route", Nanotechnol› ogy, 2010, pp. 1-10, vol. 21. 

Taiwanese Office Action dated Nov. 19, 2013, issued in Taiwanese Patent Application No. 101104425. 

Japanese Office Action dated Nov. 11, 2014, issued in corresponding JP Application No. 2012-024621 (3 pages). 

* cited by examiner 

Primary Examiner - Cynthia H Kelly 

Assistant Examiner - Anna Malloy 

(74) Attorney, Agent, or Firm - Westerman, Hattori, Daniels & Adrian, LLP 

## (57) ABSTRACT 

A resist composition comprising a salt of a mono- to tet› rafunctional carboxylic acid with a metal selected from mag› nesium, chromium, manganese, iron, cobalt, nickel, copper, zinc, silver, cadmium, indium, tin, antimony, cesium, zirco› nium, and hafnium, and a solvent is improved in film unifor› mity when coated, and exhibits a high resolution, high sensi› tivity, and minimal LER when processed by the EB or EUV lithography. 

US009164383B2 

## FOREIGN PATENT DOCUMENTS 

## OTHER PUBLICATIONS 

## 8 Claims, No Drawings 

