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# c12) United States Patent 

# Hatakeyama et al. 

# (54) RESIST COMPOSITION AND PATTERNING PROCESS 

(71) Applicant: SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP) 

(72) Inventors: Jun Hatakeyama, Joetsu (JP); Masaki Ohashi, Joetsu (JP) 

(73) Assignee: SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP) 

( * ) Notice: Subject to any disclaimer, the term ofthis patent is extended or adjusted under 35 U.S.C. 154(b) by 45 days. 

(21) Appl. No.: 15/920,746 

(22) Filed: Mar. 14, 2018 

## (65) Prior Publication Data 

US 2018/0267403 Al Sep. 20, 2018 

## (30) Foreign Application Priority Data 

Mar. 17, 2017 (JP) ................................. 2017-052391 

(51) Int. Cl. 

<img src='content_image/905130.jpg'>

(52) U.S. Cl. CPC .......... G03F 710045 (2013.01); C07C 69/635 (2013.01); C07C 303132 (2013.01); C07C 309/04 (2013.01); C07C 309/06 (2013.01); C07C 309107 (2013.01); C07C 309/39 (2013.01); C08F 220116 (2013.01); C08F 220120 (2013.01); C08F 220122 (2013.01); C08F 220124 (2013.01); C08F 220126 (2013.01); C08F 220128 (2013.01); C08F 

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# (IO) Patent No.: US 10,606,172 B2 

# (45) Date of Patent: Mar.31,2020 

(58) Field of Classification Search CPC .... G03F 7/0045; G03F 7/0382; G03F 7/0397; G03F 7/38; C08F 220/16; C08F 220/20; C08F 220/22; C08F 220/24; C08F 220/26; C08F 220/28; C08F 2220/281; C08F 2220/282; C08F 2220/283; C08F 2220/301; C08F 2220/302; C08F 220/38; C08F 2220/382; C08F 222/14; C08F 222/16; C08F 222/18; C08F 222/20; C08F 222/24; C08F 224/00; C08F 228/02; C07C 69/635; C07C 303/32; C07C 309/04; C07C 309/06; C07C 309/07; C07C 309/39 USPC ...................................... 430/270.1, 325, 326 See application file for complete search history. 

## (56) References Cited 

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OTHER PUBLICATIONS Wang et al., "Photobase generator and photo decomposable quencher for high-resolution photoresist applications", Pro. of SPIE, (2010), vol. 7639, pp. 46390W, w/EnglishAbstract, (Cited in Specification), (15pages). 

Primary Examiner - John S Chu (74) Attorney, Agent, or Firm - Westerman, Hattori, Daniels & Adrian, LLP 

## (57) ABSTRACT 

A resist composition comprising a base polymer and a quencher in the form of an iodonium salt capable of gener› ating fluorobenzoic acid bonded to iodized benzene offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone. 

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USO 106061 72B2 

220138 (2013.01); C08F 222114 (2013.01); C08F 222116 (2013.01); C08F 222118 (2013.01); C08F 222120 (2013.01); C08F 222124 (2013.01); C08F 224100 (2013.01); C08F 228102 (2013.01); G03F 710046 (2013.01); G03F 710382 (2013.01); G03F 710397 (2013.01); G03F 71162 (2013.01); G03F 71168 (2013.01); G03F 712004 (2013.01); G03F 712006 (2013.01); G03F 712037 (2013.01); G03F 712041 (2013.01); G03F 71322 (2013.01); G03F 71325 (2013.01); G03F 7138 (2013.01); C08F 2220/281 (2013.01); C08F 2220/282 (2013.01); C08F 2220/283 (2013.01); C08F 2220/301 (2013.01); C08F 2220/302 (2013.01); C08F 2220/382 (2013.01) 

## U.S. PATENT DOCUMENTS 

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## FOREIGN PATENT DOCUMENTS 

(Continued) 

## 18 Claims, No Drawings 

