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## COMPOUND, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM USING SAME, RESIST-COATED MASK BLANK, PHOTOMASK, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE 

## CROSS REFERENCE TO RELATED APPLICATION 

This is a continuation of International Application No. PCT/JP2014/065498 filed on Jun. 11, 2014, and claims priority from Japanese Patent Application No. 2013-145015 filed on Jul. 10, 2013 and Japanese Patent Application No. 2014-026904 filed on Feb. 14, 2014, the entire disclosures of which are incorporated herein by reference. 

## BACKGROUND OF THE INVENTION 

1. Field of the Invention 

The present invention relates to a compound, an active light sensitive or radiation sensitive resin composition, a resist film using the same, a resist-coated mask blank, a photomask, a pattern forming method, a method for manu› facturing electronic device, and an electronic device, which are suitable for use in super-micro lithographic processes and other fabrication processes such as for manufacturing super LSis or high capacity microchips and are capable of forming a high-definition pattern using electron beams or extreme ultraviolet light. 

2. Description of the Related Art 

In fine processing using resist compositions, there is an increasing demand to form ultrafine patterns as the integra› tion of integrated circuits increases. Therefore, exposure wavelengths have been shortened with the light for exposure being changed from the g-line to the i-line, and then to excimer laser light and, currently, for example, the lithog- raphy techniques using electron beams are being developed. 

Resist films subjected to exposure with excimer laser light or electron beams are usually formed of chemical amplified resist compositions. Various compounds are being devel› oped as photoacid generators which are the main constituent components of the chemical amplified resist compositions. For example, techniques in which a sulfonium salt having a specific structure is used as a photoacid generator in order to form a favorable pattern are known (for example, refer to JP2010-155824A and JP2012-168502A). 

## SUMMARY OF THE INVENTION 

However, from the viewpoint of the overall performance as a resist, finding an appropriate combination of the resin, the photoacid generator, the basic compound, the additives, the solvent, and the like to be used is difficult, in particular, in consideration of the current demand for forming ultrafine (for example, a line width of 50 nm or less) patterns with high resolution (for example, high resolving power), excel- lent pattern shape, and low line edge roughness (LER), there is room for improvement in practice. 

An object of the present invention is to provide a com› pound and an active light sensitive or radiation sensitive resin composition which are able to form ultrafine (for example, a line width of 50 nm or less) patterns in a state in which high resolution (for example, high resolving power), 

excellent pattern shape, and low line edge roughness (LER) are satisfied at the same time. 

Another object of the present invention is to provide a resist film using the active light sensitive or radiation sensitive resin composition described above, a resist-coated mask blank, a photomask, a pattern forming method, a method for manufacturing an electronic device, and an electronic device. 

As a result of intensive research, the present inventors found that the objects described above were achieved using an active light sensitive or radiation sensitive resin compo› sition which contains a compound with a specific structure. 

That is, the present invention is as follows. 

[1] An active light sensitive or radiation sensitive resin composition including a compound (A) represented by Gen› eral Formula (I) or (II) below, 

(in the formulae, each ofY $_{1 }$and Y $_{2 }$ represents a monovalent organic group; each of M$_{1 }$ + and M$_{2 }$ + represents an organic onium ion; each of X$_{1 }$ and X$_{2 }$ represents a group which is represented by -S-, -NH-, or -NR 1 -; R $^{1 }$represents a monovalent organic group; each of nl and n2 represents an integer of 1 or more; and R 1 and Y $_{1 }$ or Y $_{2 }$ may bond with each other to form a ring). 

[2] The active light sensitive or radiation sensitive resin composition according to [1], in which, in General Formula (I) or (II), X$_{1 }$ or X$_{2 }$ is a group which is represented by -NH- or -NR 1 -. 

[3] The active light sensitive or radiation sensitive resin composition according to [1], in which, in General Formula (I) or (II), X$_{1 }$or X$_{2 }$ is a group which is represented by-S-. 

[ 4] The active light sensitive or radiation sensitive resin composition according to any one of [1] to [3], in which, in General Formula (I) or (H), Y$_{1 }$ or Y$_{2 }$ is an aryl group or a monovalent hydrocarbon group which has an alicyclic hydrocarbon structure having 5 or more carbon atoms. 

[5] The active light sensitive or radiation sensitive resin composition according to any one of [1] to [4], further including a compound (B) which has a phenolic hydroxyl group. 

[ 6] The active light sensitive or radiation sensitive resin composition according to [5], in which the compound (B) is a resin which has a repeating unit represented by General Formula (1) below, 

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