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[0124] fl: greater than or equal to 1 wt % and less than 3 wt % dissolved in xylene 

[0125] X: less than 1 wt % dissolved in xylene. 

## Storage Stability 

[0126] Storage stability of the semiconductor resist com› positions according to Examples 1 to 8 and Comparative Example was evaluated by allowing the resist compositions to stand for a particular time at room temperature (0° C. to 30° C.) and examining their precipitation degrees with naked eyes. The results are denoted as follows: 

[0127] o: storable for greater than or equal to 1 month 

[0128] fl: storable for 1 week to less than 1 month 

[0129] X: storable for less than 1 week 

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[0130] Referring to the results of Table 1, the semicon› ductor resist compositions according to Examples 1 to 9 showed excellent solubility and storage stability compared with that of the Comparative Example, and the patterns formed of the resist compositions of Examples 1 to 8 showed excellent sensitivity compared with a pattern formed of the semiconductor resist composition according to Comparative Example. In contrast, the semiconductor resist composition according to Comparative Example showed insufficient solubility about (in) a xylene solvent, and thus storage› stability of the composition and pattern formation by using the same were difficult to evaluate. 

## Evaluation 2 

[0131] A substrate coated with each resist according to Examples 1 to 9 and 

[0132] Comparative Example was exposed to an extreme ultraviolet (UV) ray (Lawrence Berkeley National Labora› tory Micro Exposure Tool). A 18 nm line pattern of 36 nm pitch was transferred on a wafer by using a wavelength radiation of 13.5 nm, a dipole illumination, and a numerical aperture of 0.3, and an imaging ray dose of 67 mJ/cm 2 . Subsequently, the patterned resist and substrate was baked (PEB) at 180° C. for 2 minutes. Subsequently, the film was dipped in 2-heptanone for 30 seconds and washed with the same developing agent additionally for 15 seconds to form a negative tone image, that is, to remove a non-exposed coating region. After the development, the film was finally baked on a 150° C. hot plate for 5 minutes. FIG. 6 is a SEM image of Example 3 (using the compound of Chemical Formula 7) showing a resist line patterned with a pitch of36 nm to have a calculated line width roughness (LWR) of 3.4 nm. 

[0133] Referring to FIG. 6, a photoresist pattern satisfying a desired line and space was well formed without a pattern collapse. 

[0134] As used herein, expressions such as "at least one of," "one of," and "selected from," when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list. Further, the use of "may" when describing embodiments of the present inven› tion refers to "one or more embodiments of the present invention." 

[0135] As used herein, the terms "use," "using," and "used" may be considered synonymous with the terms "utilize," "utilizing," and "utilized," respectively. 

[0136] In addition, the terms "substantially," "about," and similar terms are used as terms of approximation and not as terms of degree, and are intended to account for the inherent deviations in measured or calculated values that would be recognized by those of ordinary skill in the art. 

[0137] Also, any numerical range recited herein is intended to include all sub-ranges of the same numerical precision subsumed within the recited range. For example, a range of "1.0 to 10.0" is intended to include all subranges between (and including) the recited minimum value of 1.0 and the recited maximum value of 10.0, that is, having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as, for example, 2.4 to 7.6. Any maximum numerical limitation recited herein is intended to include all lower numerical limitations sub› sumed therein and any minimum numerical limitation recited in this specification is intended to include all higher numerical limitations subsumed therein. Accordingly, Appli› cant reserves the right to amend this specification, including the claims, to expressly recite any sub-range subsumed within the ranges expressly recited herein. 

[0138] Hereinbefore, the certain example embodiments of the present invention have been described and illustrated, however, it should be apparent to a person with ordinary skill in the art that the present invention is not limited to the example embodiment as described, and may be variously modified and transformed without departing from the spirit and scope of the present invention. Accordingly, the modi› fied or transformed example embodiments may be under› stood from the technical ideas and aspects of the present invention, and the modified example embodiments are within the scope of the appended claims of the present invention and equivalents thereof. 

What is claimed is: 

1. A semiconductor resist composition, comprising an organometallic compound represented by Chemical Formula 1, and 

a solvent: 

wherein, in Chemical Formula 1, 1 

R is selected from a substituted or unsubstituted Cl to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 benzyl group, and-Rc-O-Rd, wherein Re is a 

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