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we aim at a theoretical analysis to describe the density of occupied traps in a semiconductor device and so to understand how a characteristic degradation process occurs in these devices and other similar devices. 

So, first of all, we need to calculate the probability of a particular trap with constants τ$_{c}$ and τ$_{e}$ starting from state 0 (empty) and after a elapsed time t it is in this same state, which we denote p$_{00}$ ( t ). This probability can be calculated observing that ([1], [3]): 

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