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wherein E comprises an electron-withdrawing group; 

c) a small amount of a base quencher, and 

p+ is a fluorine free cation. 

3. A method of forming a patterned material feature on a substrate, said method comprising: 

a) providing a material surface on a substrate; 

b) forming a photoresist layer over said material surface, said photoresist comprising 

(i) an acid-sensitive imaging polymer that is originally insoluble in aqueous, alkaline developers, but becomes soluble upon reaction with protons, with or without the aid of heating; 

(ii) A chemically amplified photoresist formulation comprising: 

A) an acid-sensitive imaging polymer that is origi› nally insoluble in aqueous, alkaline developers, but becomes soluble upon reaction with protons, with or without the aid of heating; 

B) a photoacid generator p+ A- that decomposes into the acid H+ A- upon irradiation with photons 

wherein A- is the anion of peracceptor-substituted organic superacids that do not contain fluorine, or semi-metallic elements 

comprising at least one of 4, 5, 6 or 7: 

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-continued 

5 

6 

7 

4. The method of claim 3 wherein A- comprises the anion of peracceptor-substituted organic superacids that do not con› tain fluorine, or semi-metallic elements. 

5. The method of claim 3, wherein E comprises at least one of a cyano (CN), alkyl, alkyloxy, hydrogen, nitro, alkylcar- bonyloxy, alkoxycarbonyl, chlorine, bromine, iodine, aryl, aryloxy, arylcarbonyloxy, or aryloxycarbonyl group. 

6. The method of claim 3 wherein A- of said photoacid generator p+ A- comprises: 

4 

7. The method of claim 6 wherein E comprises at least one ofCN, CO$_{2}$CH$_{3}$ , CO$_{2}$C$_{2}$H$_{5}$ , COiCH$_{2}$ ) $_{2}$OH, NO$_{2}$ , or H. 

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wherein E comprises an electron-withdrawing group: 

(iii) a small amount of a base quencher; 

c) patternwise exposing said photoresist layer to optical, DUY or MlN radiation thereby creating a pattern of radiation-exposed regions in said photoresist layer, 

d) selectively removing portions of said photoresist layer to expose portions of said material surface, and 

e) etching or ion implanting said exposed portions of said material, thereby forming said patterned material fea› ture. 

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-continued 

5 

6 

7 

4 

