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# (12) United States Patent 

# Schiltz 

# (54) RESIN, A DOUBLE RESIN LAYER FOR EXTREME ULTRAVIOLET LIGHT (EUV) PHOTOLITHOGRAPHY, AND AN EXTREME ULTRAVIOLET LIGHT (EUV) PHOTOLITHOGRAPHY PROCESS 

(75) Inventor: Andre Schiltz, Saint Ismier (FR) 

(73) Assignee: France Telecom, Paris (FR) 

( *) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by O days. 

(21) Appl. No.: 09/912,057 

(22) Filed: Jul. 25, 2001 

## (65) Prior Publication Data 

US 2002/0072014 Al Jun. 13, 2002 

## (30) Foreign Application Priority Data 

Jul. 26, 2000 (FR) ............................................ 00 09759 

(51) Int. Cl.7 ............................. G03F 7/00; G03F 7/16; C08J 7/18 

(52) U.S. Cl. ............................. 430/312; 430/9; 430/14; 430/15; 430/311; 430/313; 430/322; 430/323; 430/394; 427 /489 

(58) Field of Search ................................. 430/311, 312, 430/313, 322, 323, 9, 14, 15, 397, 966; 427/489 

## (56) References Cited 

4,394,437 A * 7/1983 Bergendahl et al. ........ 430/312 

## U.S. PATENT DOCUMENTS 

<img src='content_image/897830.jpg'>

# (10) Patent No.: US 6,653,054 B2 

# Nov. 25, 2003 (45) Date of Patent: 

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* cited by examiner 

Primary Examiner-Mark F. Huff 

Assistant Examiner-Nicole Barreca 

(74) Attorney, Agent, or Firm-Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.; Eric B. Meyertons 

## (57) ABSTRACT 

A semiconductor substrate etching masking layer onto which the pattern to be etched can be transferred by photo› lithography at extreme ultraviolet light wavelengths from 10 to 100 nm and which is resistant to plasma etching. An ultraviolet light semiconductor integrated circuit photoli› thography process and the use for fabricating a double masking layer for semiconductor substrate etching of a photo-ablation layer sensitive to extreme ultraviolet light and resistant to deep ultraviolet light and/or ultraviolet light coupled to a polymer resin layer resistant to extreme ultra› violet light and to plasma etching when the resin has been developed and sensitive to deep ultraviolet light and/or to ultraviolet light. 

US006653054 B2 

## FOREIGN PATENT DOCUMENTS 

## 16 Claims, 2 Drawing Sheets 

<img src='content_image/897862.jpg'>

