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[0056] The resin may have a weight average molecular weight of about 500 to about 20,000. 

[0057] The resin may be included in an amount of about 0.1 wt% to about 50 wt% based on a total amount of the semiconductor resist composition. 

[0058] When the resin is included within these amount ranges, excellent ( or suitable) etch resistance and heat resis› tance may be obtained. 

[0059] In one or more embodiments, the semiconductor resist composition according to an embodiment may include the organometallic compound, the solvent, and the resin. However, the semiconductor resist composition according to the embodiment is not limited thereto and may further include additives as needed. Non-limiting examples of the additives may include a surfactant, a cross-linking agent, a leveling agent, or a combination thereof. 

[0060] The surfactant may include, for example, an alkyl benzene sulfonate salt, an alkyl pyridinium salt, polyethyl› ene glycol, a quaternary ammonium salt, and/or the like, but is not limited thereto. 

[0061] The cross-linking agent may be, for example, a melamine-based, substituted urea-based, or a polymer-based cross-linking agent, but is not limited thereto. In an embodi› ment, the cross-linking agent may have at least two cross› linking forming substituents, for example, the cross-linking agent may be a compound such as methoxymethylated glycoluril, butoxymethylated glycoluril, methoxymethyl› ated melamine, butoxymethylated melamine, methoxymeth› ylated benzoguanamine, butoxymethylated benzoguan› amine, methoxymethylated urea, butoxymethylated urea, methoxymethylated thiourea, and/or the like. 

[0062] The leveling agent may be used for improving coating flatness during printing and may be any suitable leveling agent. 

[0063] A use amount of the additives may be controlled depending on desired properties. 

[0064] In some embodiments, the semiconductor resist composition may further include a silane coupling agent as an adherence enhancer, in order to improve a close-contact› ing force with the substrate (e.g., to improve the adherence of the semiconductor composition to the substrate). The silane coupling agent may be, for example, a silane com› pound including a carbon-carbon unsaturated bond (such as vinyltrimethoxysilane, vinyltriethoxysilane, vinyl trichlo› rosilane, and/or vinyltris(p-methoxyethoxy)silane), 3-meth- acryloxypropyltrimethoxysilane, 3-acryloxypropylt- rimethoxysilane, p-styryl trimethoxysilane, 3-methacryloxypropy lmethy ldimethoxysilane, 3-methacry› loxypropy lmethy l diethoxysilane, trimethoxy[3-(phe› nylamino)propyl]silane, and/or the like, but is not limited thereto. 

[0065] The semiconductor resist composition may be formed into a pattern having a high aspect ratio without a collapse (or with a significantly reduced risk of collapse). For example, in order to form a fine pattern having a width of, for example, about 5 nm to about 100 nm, about 5 nm to about 80 nm, about 5 nm to about 70 nm, about 5 nm to about 50 nm, about 5 nm to about 40 nm, about 5 nm to about 30 nm, or about 5 nm to about 20 nm, the semicon› ductor resist composition may be used for a photoresist process using light in a wavelength ranging from about 5 nm to about 150 nm, for example, about 5 nm to about 100 nm, about 5 nm to about 80 nm, about 5 nm to about 50 nm, about 5 nm to about 30 nm, or about 5 nm to about 20 nm. 

