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## (56) References Cited 

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## U.S. PATENT DOCUMENTS 

## FOREIGN PATENT DOCUMENTS 

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Devoe et al., "Photochemistry and Photophysics of ’Onium Salts*," 

Advances in Photochemistry, vol. 17, pp. 313-355, 1992, John Wiley & Sons. 

Damme! et al., "193 nm Immersion Lithography-Taking the Plunge," Journal of Photopolymer Science and Technology, vol. 17, 

No. 4, pp. 587-602, 2004. 

Arimitsu et al., "Sensitivity Enhancement of Chemical-Ampflica› tion-Type Photo imaging Materials by Acetoacetic Acid Derivatives," Journal of Photopolymer Science and Technology, vol. 8, No. 1, pp. 43-46, 1995. 

Arimitsu et al., "Effect of Phenolic Hydroxyl Residues on the Improvement of Acid-Proliferation-Type Photoimaging Materials," Journal of Photopolymer Science and Technology, vol. 9, No. 1, pp. 29-30, 1996. 

Lowe, "Synthesis of sulphonium salts," The Chemistry of the Sulphonium Group, Ed. Stirling et al., Chapter 11, pp. 267-312, 1981, John Wiley & Sons Ltd. 

Jul. 17, 2013 Office Action issued in U.S. Appl. No. 13/476,629. Sep. 12, 2013 Office Action issued in U.S. Appl. No. 13/476,700. Sep. 30, 2013 European Search Report issued in European Applica› tion No. 12003989.6. 

Dec. 16, 2013 Office Action issued in U.S. Appl. No. 13/476,700. 

* cited by examiner 

## OTHER PUBLICATIONS 

