[0462] In a case where the composition according to the embodiment of the present invention contains a surfactant, the used amount of the surfactant is preferably 0.0001 to 2 mass% and more preferably in the range of0.0005 to 1 mass % with respect to the total solid content of the composition. 

[0463] Meanwhile, in a case where the addition amount of the surfactant is 10 ppm or lower with respect to the total amount (except for the solvent) of the composition, the uneven distribution properties of the surface of the hydro› phobic resin increase, and accordingly, the resist film surface can become more hydrophobic, and thus it is possible to improve water followability in a case of immersion expo› sure. 

[0464] The composition according to the embodiment of the present invention may or may not contain carboxylic acid onium salt. Examples of the carboxylic acid onium salt include salts disclosed in paragraphs <0605> and <0606> of US2008/0187860A. 

[0465] These carboxylic acid onium salts can be synthe› sized by reacting sulfonium hydroxide, iodonium hydroxide, ammonium hydroxide, and carboxylic acid with silver oxide in an appropriate solvent. 

[0466] In a case where the composition according to the embodiment of the present invention contains carboxylic acid onium salt, the content thereof is generally 0.1 to 20 mass%, preferably 0.5 to 10 mass%, and more preferably 1 to 7 mass % with respect to the total solid content of the composition. 

[0467] In the composition according to the embodiment of the present invention, if necessary, an acid proliferation agent, a dye, a plasticizer, a photosensitizer, a light absorber, an alkali-soluble resin, a dissolution inhibitor, a compound (for example, a phenol compound having a molecular weight of 1,000 or lower, alicyclic or aliphatic compound having a carboxy group) that promotes solubility in the developer, and the like can be further contained. 

[0468] The phenol compound having a molecular weight of 1000 or less can be easily synthesized by those skilled in the art, for example, with reference to methods disclosed in JP! 992-122938A (JP-H04-122938A), JP1990-028531A (JP-H02-028531A), U.S. Pat. No. 4,916,210A, and EP219294B. 

[0469] Specific examples of alicyclic or aliphatic com› pounds having a carboxy group include a carboxylic acid derivative that has a steroid structure such as cholic acid, deoxycholic acid, and lithocholic acid, an adamamanecar› boxylic acid derivative, adamantanedicarboxylic acid, cyclohexanecarboxylic acid, and cyclohexane dicarboxylic acid. 

[0470] In view of resolving power improvement, with the composition according to the embodiment of the present invention, it is preferable to form a resist film having a film thickness of 90 nm or less and preferably having a film thickness of 85 nm or less. In a case where coatability and film formability are improved by setting the concentration of the solid. content in the composition to an appropriate range 

## Carboxylic Acid Onium Salt 

## Other Additives 

## Preparation Method 

such that the composition has an appropriate viscosity, the film thickness can be obtained. 

[0471] The concentration of the solid content of the com› position according to the embodiment of the present inven› tion is generally 1.0 to 10 mass%, preferably 2.0 to 5.7 mass %, and more preferably 2.0 to 5.3 mass %. By causing the solid content concentration to be in the above range, the substrate can be uniformly coated with the resist solution, and also an excellent resist pattern can be formed by LWR. Although the reason is unclear, it is considered that, by setting the concentration of the solid content to 10 mass % or less and preferably 5.7 mass% or less, the aggregation of the material, particularly, the acid generator in the resist solution is suppressed, and as a result, a uniform resist film can be formed. 

[0472] The concentration of the solid content is a mass percentage of a mass of the other resist components exclud› ing the solvent with respect to the total mass of the com› position. 

[0473] The composition according to the embodiment of the present invention can be used by dissolving the above components in a predetermined organic solvent, preferably the mixed solvent, performing filter filtration, and applying on a predetermined support (substrate). The pore size of the filter used in the filter filtration is 0.1 µm or lower, more preferably 0.05 µm or lower, and even more preferably 0.03 µm or lower, and preferably made of polytetrafluoroethyl› ene, polyethylene, or nylon. In the filter filtration, for example, as disclosed in JP2002-062667 A, cyclical filtration may be performed, or filtration may be performed by con› necting plural kinds of filters in series or in parallel. In addition, the composition may be filtrated a plurality of times. Before or after the filter filtration, a deaeration treatment or the like may be performed on the composition. 

[0474] The composition according to the embodiment of the present invention relates to an actinic ray-sensitive or radiation-sensitive resin composition of which properties change in reaction to the irradiation with an actinic ray or radiation. More specifically, the present invention relates to an actinic ray-sensitive or radiation-sensitive resin compo› sition used in a step of manufacturing a semiconductor such as an IC, the manufacturing of a circuit board such as a liquid crystal and a thermal head, the manufacturing of a mold structure for imprinting, a photofabrication step, a lithographic printing plate, and an acid curable composition. 

[0475] The present invention also relates to a pattern forming method using the actinic ray-sensitive or radiation› sensitive resin composition. Subsequently, the pattern form› ing method according to the embodiment of the present invention is described. Together with the description of the pattern forming method, the resist film according to the embodiment of the present invention is described. 

[0476] The pattern forming method according to the embodiment of the present invention includes: 

[0477] (i) a resist film forming step of forming a resist film by using the actinic ray-sensitive or radiation-sensitive resin composition; 

[0478] (ii) an exposure step of exposing the resist film; and 

## Application 

## Pattern Forming Method 

