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# c12) United States Patent 

# Tsuchimura et al. 

# (54) RESIST FILM, RESIST COATED MASK BLANKS AND METHOD OF FORMING RESIST PATTERN USING THE RESIST FILM, AND CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION 

(75) Inventors: Tomotaka Tsuchimura, Haibara-gun (JP); Takeshi Inasaki, Haibara-gun (JP); Hiroo Takizawa, Haibara-gun (JP) 

(73) Assignee: FUJIFILM Corporation, Tokyo (JP) 

( *) Notice: Subject to any disclaimer, the term ofthis patent is extended or adjusted under 35 U.S.C. 154(b) by 32 days. 

(21) Appl. No.: 13/367,512 

(22) Filed: Feb.7,2012 

## (65) Prior Publication Data 

US 2012/0214091 Al Aug. 23, 2012 

## (30) Foreign Application Priority Data 

Feb. 21, 2011 (JP) ................................. 2011-035229 

(51) Int. Cl. G03F 1120 G03C 5100 (2012.01) (2006.01) 

(52) U.S. Cl. USPC ............. 430/5; 430/270.1; 430/296; 430/942 

( 58) Field of Classification Search USPC ................................... 430/5, 270.1, 296, 942 See application file for complete search history. 

## (56) References Cited 

<img src='content_image/904251.jpg'>

## U.S. PATENT DOCUMENTS 

<img src='content_image/904261.jpg'>

# (IO) Patent No.: US 8,614,033 B2 

# (45) Date of Patent: Dec. 24, 2013 

## FOREIGN PATENT DOCUMENTS 

<img src='content_image/904252.jpg'>

Office Action dated May 6, 2013 from the Taiwanese Patent Office in a Taiwanese Application No. 101102071. 

Primary Examiner - Christopher Young 

(74) Attorney, Agent, or Firm - Sughrue Mion, PLLC 

## (57) ABSTRACT 

A resist film formed by using a chemical amplification type resist composition containing (A) a high molecular com› pound having a structure wherein a hydrogen atom of a phe› nolic hydroxyl group is substituted by a group represented by the following general formula (I), (B) a compound generating an acid upon irradiation with actinic rays or radiation, and an organic solvent, and the film thickness is 10 to 200 nm. 

wherein, R$_{1 }$ represents a hydrocarbon group, R$_{2 }$ represents a hydrogen atom or a hydrocarbon group, and Ar represents an aryl group. R$_{1 }$may also bind to Ar to form a ring which may also contain a heteroatom. * represents a binding position with an oxygen atom of the phenolic hydroxyl group. 

US008614033B2 

## OTHER PUBLICATIONS 

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## 20 Claims, No Drawings 

