content_image/916595.jpg
<img src='content_image/916595.jpg'>

As apparent from the results shown in Table 7, in Com› parative Example IP not using an acid-increasing agent and in Comparative Examples 2P to SP using an acid-increasing agent not satisfying formula (I), the sensitivity, resolution, pattern profile, LER and dry etching resistance are poor. In addition, in Comparative Examples IP, 4P and SP, the reduc› tion in scum is also poor, and in Comparative Examples 2P to SP, the aging stability is also poor. 

On the other hand, in Examples IP to 28P using an acid› increasing agent satisfying formula (I), it is seen that the reduction in scum is particularly excellent and the sensitivity, resolution, pattern profile, LER performance, dry etching resistance and aging stability are excellent. 

Example as Positive Chemical Amplification Resist 

Examples IQ to 9Q and Comparative Examples IQ to SQ 

The positive resist composition shown in Table 8 below was filtered through a polytetrafluoroethylene filter having a 

## Preparation of Resist Solution 

EUV 

pore size of 0.04 µm to prepare a pos1t1ve resist solution having a solid content concentration of3.84 mass%. 

## (Evaluation of Resist) 

The prepared positive resist solution was uniformly coated on a hexamethyldisilazane-treated silicon substrate by using a spin coater and heated/dried at 100° C. for 60 seconds on a hot plate to form a resist film having a thickness of0.0S µm. 

With respect to the resist film obtained, the sensitivity, resolution, pattern profile, line edge roughness (LER) and dry etching resistance were evaluated by the following methods. 

## [Sensitivity] 

The obtained resist film was exposed using EUV light (wavelength: 13 nm) through a reflective mask having a 1:1 line-and-space pattern with a line width of 100 nm by chang› ing the exposure dose in steps of0.1 mJ/cm $^{2 }$in the range of0 to 20.0 mJ/cm 2 , then baked at 110° C. for 90 seconds and thereafter, developed with an aqueous 2.38 mass % tetram› ethylanimonium hydroxide (TMAH) solution. 

The exposure dose for reproducing the line-and-space (LIS= 1/1) mask pattern with a line width ofl 00 nm was taken as the sensitivity. A smaller value indicates higher sensitivity. 

