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solution was micro filtered through a membrane filter having a pore size of 0.1 pm to obtain a resist solution. 

[0162] This resist solution was coated on a 6-inch silicon wafer by using a spin coater, Mark 8, manufactured by Tokyo Electron Ltd. and then baked at 110° C. for 90 seconds to obtain auniform film having a thickness of 0.25 µm. 

## (2) Production of Positive Resist Pattern 

[0163] This resist film was then irradiated with electron beams by using an electron beam image-drawing apparatus (HL 7 50, manufactured by Hitachi Ltd., accelerating voltage: 50 KeV). After the irradiation, the resist film was baked at 110° C. for 90 seconds, dipped in an aqueous 2.38 mass% tetramethylannnonium hydroxide (TMAH) solution for 60 seconds, rinsed with water for 30 seconds andthen dried. The obtained pattern was evaluated by the following methods. 

## (2-1) Sensitivity 

[0164] The cross-sectional profile of the pattern obtained was observed by using a scanning electron microscope (S-4300, manufactured by Hitachi, Ltd.). The minimum irradiation energy for resolving a 0.5-µm line (line:space= 1: 1) was defined as the sensitivity. 

## (2-2) Resolving Power 

[0165] The limiting resolving power (the line and space were separated and resolved) at the irradiation dose of giving the above-described sensitivity was defined as the resolving power. 

## (2-3) Pattern Profile 

[0166] The cross-sectional profile of a 0.15-µm line pat› tern at the irradiation dose of giving the above-described sensitivity was observed by using a scanning electron micro› scope (S-4300, manufactured by Hitachi, Ltd.) and evalu› ated on a three-stage scale of rectangular, slightly tapered, and tapered. 

## (2-4) Defocus Latitude Depended on Line Pitch 

[0167] In a 0.15-µm line pattern at the irradiation dose of giving the above-described sensitivity, the line width of a dense pattern (line:space=l:1) and the line width of an isolated pattern were measured. The difference there between was defined as the defocus latitude depended on line pitch. 

[0168] The results of Example 1 were very good, that is, the sensitivity was 8.5 µC/cm 2 , the resolving power was 0.10 µm, the pattern profile was rectangular and the defocus latitude depended on line pitch was 12 nm. 

## Examples 2 to 12 and Comparative Example 1 

[0169] Using the compounds shown in Table 2, the prepa› ration and coating of resist and the evaluation of electron beam exposure were performed thoroughly in the same manner as in Example 1. The evaluation results are shown in Table 2. 

[0170] The component ( c) and other component used in Examples and the resin used in Comparative Example are as follows. 

## (Organic Basic Compound) 

[0171] D-1: tri-n-hexylamine [0172] D-2: 2,4,6-triphenylimidazole [0173] D-3: tetra-(n-butyl) annnonium hydroxide 

## (Other Component (Surfactant)) 

[0174] W-1: a fluorine-containing surfactant, Megafac F-176 (produced by Dainippon Ink & Chemicals, Inc.) 

[0175] W-2: a fluorine/silicon-containing surfactant, Megafac ROS (produced by Dainippon Ink & Chemicals, Inc.) 

[0176] W-3: a silicon-containing surfactant, polysiloxane polymer KP-341 (produced by Shin-Etsu Chemical Co., Ltd.) 

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