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# c19) United States c12) Patent Application Publication 

# HOSHINO 

# (54) POSITIVE RESIST COMPOSITION FOR EUV LITHOGRAPHY AND METHOD OF FORMING RESIST PATTERN 

(71) Applicant: ZEON CORPORATION, Chiyoda-ku, Tokyo (JP) 

(72) Inventor: Manabu HOSHINO, Chiyoda-ku, Tokyo (JP) 

(73) Assignee: ZEON CORPORATION, Chiyoda-ku, Tokyo (JP) 

(21) Appl. No.: 17/042,912 

(22) PCT Filed: Apr. 17, 2019 

(86) PCT No.: § 371 (c)(l), PCT I JP2019/0l 6445 (2) Date: Sep. 29, 2020 

## (30) Foreign Application Priority Data 

Apr. 27, 2018 (JP) ................................. 2018-086161 

(51) Int. Cl. 

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## Publication Classification 

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(52) U.S. Cl. CPC .......... G03F 710392 (2013.01); G03F 712004 (2013.01); C08F 212108 (2013.01); C08F 220124 (2013.01); G03F 7132 (2013.01) 

## (57) ABSTRACT 

Provided is a positive resist composition for EUV lithogra› phy that can form a resist film having high sensitivity to extreme ultraviolet light. The positive resist composition contains a solvent and a copolymer that includes a monomer unit (A) represented by general formula (I) and a monomer unit (B) represented by general formula (II). In the formulae, R 1 indicates an organic group including 5 or more fluorine atoms, le indicates a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R $^{3 }$indicates a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of O to 5, and p+q=5. 

US 20210026244Al 

# c10) Pub. No.: US 2021/0026244 Al 

# (43) Pub. Date: Jan. 28, 2021 

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