11. A method of automatic and systematic design of a disordered semiconductor device, the method comprising: 

(a) receiving a partial input specification of composition and geometry of the disordered semiconductor device; 

(b) defining a simulation space of device parameters and corresponding pa rameter ranges of the disordered semiconductor device; 

(c) automatically performing the method of claim 1 for two or more different cases, wherein the input specihcation is determined for each case by se lecting values for each of the device parameters within the corresponding parameter ranges; and 

(d) providing an optimized device configuration as an output. 

