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## Example 7 and Comparative Examples J-K 

[0097] Silicon wafers having a 10 centimeter diameter (p/boron doped, <100> orientation) were cleaned using a 5-minute exposure in a UV/ozone chamber. The UV/ozone chamber contained an ultraviolet lamp measuring 5 inches by 5 inches (12.5 cm by 12.5 cm) (obtained under the trade designation "UV GRID LAMP, model 88-9102-02" from 

BHK, Claremont, Calif.), which was encased in a small sheet metal box (13 cm wide x 14 cm deep x 15 cm high) such that the lamp was suspended 8 cm above the bottom of the box. A small lab jack was used to position metal wafer pieces to be cleaned as close as possible to the ultraviolet lamp without physically contacting the lamp. The front of the box was a door, hinged at the top that allowed samples to be inserted and removed. An oxygen source was attached to a small hole in one side of the box that provided oxygen to the box at a rate of approximately 1 to 5 standard liters per minute. Optical constants were obtained on the cleaned wafer according to the Coating Thickness Test. 

[0098] The cleaned wafers were then cut into 4 pieces (quarters) measuring about 50 millimeters along the cut edges. Three wafer pieces were coated with a 0.1 percent by weight solution of PFPEl in methyl perfluorobutyl ether using an automated dip coater that used an immersion followed by immediate withdrawal at 11 millimeters per 

second (mm/sec). After a period of about 30 to 60 minutes at room temperature, two of the perfluoropolyether silane› coated wafer pieces were exposed to an acid dip treatment in an acidic catalyst composition as reported in Table 2. 

[0099] This acid treatment used the same automated dip coater as above and a withdrawal rate of 11 millimeters/ second. Any excess acid solution was blown dry under a nitrogen stream. The two acid-treated pieces and the third fluorinated silane-coated (but not acid-treated) piece were 

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then cured at 60° C. for 1 hour, after which they were allowed to cool to room temperature. The optical constants were then measured according to the Coating Thickness Test to obtain a thickness value (Initial Thickness). Next, the wafer quarters were rinsed for 1 minute with methyl per› fluorobutyl ether after which the optical constants were measured again to obtain a thickness value (Final Thick› ness). The results are reported in Table 2 (below). 

[0100] Example 7 was repeated with the following modi› fications. The withdrawal rate after the silane dip was 15 millimeters/second; the time between the silane dip and the acid dip treatment was 15 minutes; a 0.1 N solution of aqueous hydrobromic acid (HBr) was used as the acid treatment; after blowing dry under nitrogen the acid dipped samples were allowed to cure for 30 minutes at room temperature prior to rinsing with methyl perfluorobutyl ether. Results are reported in Table 3. 

[0101] Example 7 was repeated with the following modi› fication. A 0.1 N solution of aqueous HNO$_{3 }$ was used as the acid treatment. Results are reported in Table 3 (below). 

## Examples 10-12 and Comparative Examples L-N 

[0102] Example 7 was repeated with the following modi› fications. The withdrawal rate in the silane dip-coating step was 5, 11, or 20 millimeters/second. For Comparative Examples L-N, no acid dip was used. Results are reported in Table 4 (below). 

## Example 8 

## Example 9 

