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[Surfactant] 

W-1: Megafac F176 (produced by Dainippon Ink & Chemicals, Inc.; fluorinated), 

W-2: Megafac ROS (produced by Dainippon Ink & Chemi› cals, Inc.; fluorinated and siliconized), 

W-3: polysiloxane polymer KP-341 (produced by Shin› Etsu Chemical Co., Ltd.; siliconized), and 

W-4: compound of the formula below: 

[Solvent] 

Al: propylene glycol monomethyl ether acetate, 

A2: y-butyrolactone, 

A3: cyclohexanone, 

Bl: propylene glycol monomethyl ether, and 

B2: ethyl lactate. 

<Evaluation> 

With respect to each of the above obtained resist compo› sitions, the resolution, residue defect and etching resistance were evaluated in accordance with the following evaluation methods. Results are given in Table 3. 

[Resolution] 

An organic antireflection film DUY 44 (produced by Brewer Science Inc.) was applied onto a silicon wafer, thereby forming a 60 nm-thick antireflection film. Each of the above prepared resist compositions was applied thereonto and baked (prebaked, PB) for 60 seconds, thereby forming a 200 nm-thick resist film. The thus obtained wafer was pat› ternwise exposed to light by means of a KrF excimer laser scanner (NAO.SO). Thereafter, the exposed wafer was baked (post-exposure baked, PEB) for 60 seconds, and developed using a developer indicated in the following table for 30 seconds. 

When no rinse treatment was performed, the wafer after the development was rotated at a rotating speed of 4000 rpm for 

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30 seconds. Thus, a line-and-space pattern was obtained. The minimum pitch in which an image was formed was denoted as a resolution. 

When a rinse treatment was to be performed, the wafer after the development was rinsed with a rinse liquid indicated in the following table and rotated at a rotating speed of 4000 rpm for 30 seconds. Thus, a line-and-space pattern was obtained. The minimum pitch in which an image was formed was denoted as a resolution. 

[Residue Defect] 

An organic antireflection film DUY 44 (produced by Brewer Science Inc.) was applied onto a silicon wafer, thereby forming a 60 nm-thick antireflection film. Each of the above prepared resist compositions was applied thereonto and baked (prebaked, PB) for 60 seconds, thereby forming a 200 nm-thick resist film. The thus obtained wafer was pat› ternwise exposed to light by means of a KrF excimer laser scanner (NAO.SO). Thereafter, the exposed wafer was baked (post-exposure baked, PEB) for 60 seconds, developed with a developer for 30 seconds, and rinsed with a rinse liquid. The rinsed wafer was rotated at a rotating speed of 4000 rpm for 30 seconds. Thus, a line-and-space pattern of 180 nm half pitch was obtained. Any residue defects on the thus obtained pat› tern were numerically rated, thereby identifying the number of residue defects per 8-inch silicon wafer, and evaluated as follows. 

A: 0 to 50 defects, 

B: 51 to 100 defects, 

C: 101 to 150 defects, and 

D: 151 or more defects. 

[Etching Resistance] 

Each of the above prepared resist compos1t10ns was applied onto a silicon wafer and baked (prebaked, PB) for 60 seconds, thereby forming a 100 nm-thick resist film. The whole surface of the obtained resist film was exposed to light by means of a KrF excimer laser scanner (NAO.SO). Thereaf› ter, the exposed resist film was developed with a negative developer for 30 seconds, and rinsed with a rinse liquid. The thus obtained wafer was rotated at a rotating speed of 4000 rpm for 30 seconds, thereby obtaining an exposed film. The resultant exposed film was etched for 30 seconds by means of an etching apparatus (model M-6000 manufactured by Hita› chi High-Technologies Corporation). Any difference between the film thickness before the etching and that after the etching was measured, thereby determining the etching rate per second. Obtained results were evaluated as follows. 

A: 0.70 to less than 0.85 nm/sec, 

B: 0.85 to less than 0.95 nm/sec, 

C: 0.95 to less than 1.05 nm/sec, and 

D: 1.05 nm/sec or greater. 

