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# c19) United States c12) Patent Application Publication 

# Hatakeyama et al. 

# (54) RESIST COMPOSITION AND PATTERNING PROCESS 

(71) Applicant: Shin-Etsu Chemical Co., Ltd., Tokyo (JP) 

(72) Inventors: Jun Hatakeyama, Joetsu-shi (JP); Masaki Ohashi, Joetsu-shi (JP) 

(73) Assignee: Shin-Etsu Chemical Co., Ltd., Tokyo (JP) 

(21) Appl. No.: 15/978,681 

(22) Filed: May 14, 2018 

(30) 

May 22, 2017 (JP) ................................. 2017-100594 

(51) Int. Cl. 

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## Foreign Application Priority Data 

## Publication Classification 

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(52) U.S. Cl. CPC .......... G03F 710397 (2013.01); C0SF 220116 (2013.01); C0SF 220130 (2013.01); G03F 710045 (2013.01); G03F 7116 (2013.01); C08F 2220/301 (2013.01); G03F 712037 (2013.01); G03F 712004 (2013.01); G03F 7132 (2013.01); C08F 2800/10 (2013.01); G03F 712006 (2013.01) 

## (57) ABSTRACT 

A resist composition contains a polymer-bound acid gen› erator, specifically a polymer comprising recurring units derived from a sulfonium or iodonium salt having a polym› erizable unsaturated bond and containing iodine in the linker between the polymerizable unsaturated bond and a fluoro› sulfonic acid. The resist composition offers a high sensitivity and improved CDU independent of whether it is of positive or negative tone. 

US 20180335696Al 

# c10) Pub. No.: US 2018/0335696 Al 

# (43) Pub. Date: Nov. 22, 2018 

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