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Quenchers: Quenchers 1 to 3 of the following structural formulae 

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## EUV Lithography Test 

## Examples 1 to 11 and Comparative Examples 1 to 3 

[0186] Each of the resist compositions in Table 1 was spin coated on a silicon substrate having a 20-nm coating of silicon-containing spin-on hard mask SHB-A940 (Shin-Etsu Chemical Co., Ltd., Si content 43 wt%) and prebaked on a hotplate at 105° C. for 60 seconds to form a resist film of 60 nm thick. Using an EUV scanner NXE3300 (ASML, NA 0.33, a 0.9/0.6, quadrupole illumination), the resist film was exposed to EUV through a mask bearing a hole pattern at a pitch 46 nm (on-wafer size) and +20% bias. The resist film was baked (PEB) on a hotplate at the temperature shown in Table 1 for 60 seconds and developed in a 2.38 wt% TMAH aqueous solution for 30 seconds to form a hole pattern having a size of 23 nm in Examples 1 to 10 and Comparative Examples 1 to 2 or a dot pattern having a size of 23 nm in Example 11 and Comparative Example 3. 

[0187] The resist pattern was evaluated. The exposure dose that provides a hole or dot pattern having a size of 23 nm is reported as sensitivity. The size of 50 holes or dots was measured under CD-SEM (CG-5000, Hitachi High-Tech- nologies Corp.), from which a size variation (3a) was computed and reported as CDU. 

[0188] The resist compositions are shown in Table 1 together with the sensitivity and CDU of EUV lithography. 

