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# c19) United States c12) Patent Application Publication 

# Fujiwara et al. 

# (54) SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS 

(71) Applicant: Shin-Etsu Chemical Co., Ltd., Tokyo (JP) 

(72) Inventors: Takayuki Fujiwara, Joetsu-shi (JP); Ryo Mitsui, Joetsu-shi (JP); Masaki Ohashi, Joetsu-shi (JP); Ryosuke Taniguchi, Joetsu-shi (JP); Koji Hasegawa, Joetsu-shi (JP) 

(73) Assignee: Shin-Etsu Chemical Co., Ltd., Tokyo (JP) 

(21) Appl. No.: 16/108,645 

(22) Filed: Aug. 22, 2018 

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## (30) Foreign Application Priority Data 

Aug. 24, 2017 (JP) ................................. 2017-161031 

(51) Int. Cl. 

(52) U.S. Cl. CPC ............ G03F 71066 (2013.01); C07C 323/64 (2013.01); G03F 710048 (2013.01); G03F 71033 (2013.01) 

## (57) ABSTRACT 

A resist composition comprising a sulfonium compound of specific structure as PAG has excellent lithography perfor› mance factors such as minimal defects, high sensitivity, improved LWR and CDU, and is a quite effective resist material for precise micropatteming. 

US 20190064665Al 

# c10) Pub. No.: US 2019/0064665 Al 

# (43) Pub. Date: Feb. 28, 2019 

## Publication Classification 

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