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The photo acid generators having a structure represented by the general formula (SA’) or (SD) are particularly pref› erable in that they have small acid diffusion and are excellent in solubility to resist solvent. The photo acid generators having a structure represented by the general formula (9’) are particularly preferable in that they have extremely small acid diffusion. 

The amount of the photo acid generator of the component (D) is preferably Oto 40 parts by mass relative to 100 parts by mass of a base resin of the component (B), 0.5 to 30 parts by mass, and more preferably 0.5 to 20 parts by mass. So long as the amount is within the range, resolution degrada› tion or mixture of foreign substances after resist develop› ment or upon peeling can be prevented. 

## (E) Quencher 

The quencher of the component (E), as required, can be added to the resist composition of the present invention. Herein, the quencher refers to a compound capable of controlling the diffusion rate when an acid generated by a photo acid generator diffuses in a resist film. 

Illustrative example of the quencher of the component (E) includes an amine compound, primary, secondary, and ter- 

