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## ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION 

## CROSS-REFERENCE TO RELATED APPLICATION 

[0001] This application is a Continuation Application of PCT Application No. PCT/JP2012/059300, filed Mar. 29, 2012 and based upon and claiming the benefit of priority from prior Japanese Patent Applications No. 2011-076093, filed Mar. 30, 2011, the entire contents of all of which are incor› porated herein by reference. 

## BACKGROUND OF THE INVENTION 

[0002] 1. Field of the Invention 

[0003] The present invention relates to an actinic-ray- or radiation-sensitive resin composition, an actinic-ray- or radiation-sensitive resin film therefrom and a method of forming a pattern using the composition. More particularly, the present invention relates to a composition that is suitable for use in, for example, an ultramicrolithography process applicable to a process for manufacturing a super-LSI or a high-capacity microchip, a process for fabricating a nanoim› print mold, a process for producing a high-density informa› tion recording medium, etc., and other photofabrication pro› cesses, and relates to a relevant film and method of forming a pattern. Further more particularly, the present invention relates to a composition, film and method of forming a pattern that can find appropriate application in, for example, the microfabrication of semiconductor devices by electron beams or soft X-rays such as EUV light. 

[0004] 2. Background Art 

[0005] Description of the Related Art 

[0006] In the microfabrication by lithography, in recent years, the formation of an ultrafine pattern on the order of tens of nanometers is increasingly required in accordance with the realization ofhigh integration for integrated circuits. In accor› dance with this requirement, the trend of exposure wave› length toward a short wavelength, for example, from g-rays to i-rays and further to a KrF excimer laser light is seen. More› over, now, the development of lithography using electron beams, X-rays or EUV light besides the excimer laser light is progressing. 

[0007] Further, the microfabrication using a resist compo› sition is not only directly used in the manufacturing of inte› grated circuits but also, in recent years, finds application in the fabrication of so-called imprint mold structures, etc. (see, for example, patent reference 1 and non-patent reference 1 ). 

[0008] Basic compounds may be added to the resist com› positions (see, for example, patent references 2 to 10). Basic compounds fulfill the role of, for example, quenching any deprotection reaction by an acid generated upon exposure. 

[0009] In recent years, the lithography using X-rays, soft X-rays or electron beams is positioned as the next-generation or next-next-generation pattern forming technology. When this lithography technology is applied, it is especially an important task to simultaneously attain high sensitivity and favorable performance in pattern shape, roughness character› istic and reduction of residue defects. 

[0010] Patent reference 1: Jpn. Pat. Appln. KOKAI Publi- cation No. (hereinafter referred to as JP-A-) 2008-162101, 

[0011] Patent reference 2: U.S. Pat. No. 5,916,728, 

[0012] Patent reference 3: JP-A-Hl0-177250, 

[0013] Patent reference 4: JP-A-H5-232706, 

[0014] Patent reference 5: JP-A-Hl0-326015, 

[0015] Patent reference 6: European Patent No. 881539, 

[0016] Patent reference 7: JP-A-2004-046157, 

[0017] Patent reference 8: U.S. Pat. No. 6,274,286, 

[0018] Patent reference 9: JP-A-Hll-084639, and 

[0019] Patent reference 10: JP-A-2008-065296. 

[0020] Non-patent reference 1: "Fundamentals of nanoim› print and its technology development/application deploy› ment-technology of nanoimprint substrate and its latest technology deployment" edited by Yoshihiko Hirai, pub› lished by Frontier Publishing (issued in June, 2006). 

## BRIEF SUMMARY OF THE INVENTION 

[0021] It is an object of the present invention to provide an actinic-ray- or radiation-sensitive resin composition that can attain high sensitivity, favorable pattern shape, favorable roughness characteristic and reduction of residue defects. It is further objects of the present invention to provide an actinic› ray- or radiation-sensitive resin film therefrom and a method of forming a pattern using the composition. 

[0022] The inventors have conducted extensive and inten› sive studies with a view toward attaining the above object. As a result, the following inventions have been completed. 

[0023] [1] An actinic-ray- or radiation-sensitive resin com› position comprising: 

[0024] a resin (P) containing an acid-decomposable repeat› ing unit (A), which resin when acted on by an acid, increases its solubility in an alkali developer, 

[0025] a compound (Q) that when exposed to actinic rays or radiation, generates an acid, and 

[0026] a compound (R) expressed by general formula (1) or (2) below, 

[0027] in the formulae, 

[0028] each of R$_{1 }$ and R$_{8 }$ independently represents an organic group containing no heteroatom, 

[0029] each ofR$_{2}$ , R$_{3}$ , R$_{5 }$ and R$_{6 }$ independently represents an alkylene group having 1 to 3 carbon atoms, 

[0030] each ofR$_{4 }$ and R$_{7 }$independently represents a hydro› gen atom or an alkyl group, and 

## PRIOR ART LITERATURE 

## Patent Reference 

## Non-Patent Literature 

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