content_image/907860.jpg content_image/907861.jpg
and the like using azobisisobutyronitrile (AIBN) as the radical initiator, thereby obtaining polymer A-2 shown below (weight average molecular weight: approximately 10000). In the following formula, relations of a=0.4, b=0.4, and c=0.2 are satisfied, however, the monomer ratio of the unit in the polymer of some embodiments of the present invention is not limited to the followings. 

<img src='content_image/907860.jpg'>

<Synthesis of Polymer (A-3)> 

[0189] Monomers which constitute each of the constitut› ing unit are polymerized by known radical polymerization and the like using azobisisobutyronitrile (AIBN) as the radical initiator, thereby obtaining polymer A-3 shown below (weight average molecular weight: approximately 10000). In the following formula, relations of a=0.4, b=0.4, and c=0.2 are satisfied, however, the monomer ratio of the unit in the polymer of some embodiments of the present invention is not limited to the followings. 

## Synthesis Example 10 

## Synthesis of Polymer (A-3) 

(A-2) 

<img src='content_image/907861.jpg'>

<Preparation of Resist Composition> 

[0190] Either one of polymer (A-1), polymer (A-2), and polymer (A-3) as the base polymer (100 parts by mass), tellurium containing sulfonium salt 1 as the photoacid generator (8 parts by mass), and propylene glycol monom› ethyl ether acetate as the solvent (1800 parts by mass) are mixed, followed by filtration using a PTFE filter, thereby preparing a resist composition (H-1). Details of the resist composition are shown in Table 1. 

[0191] Either one of the tellurium containing sulfonium salts 2 to 4 synthesized as above are used by the formulation amount shown in Table 1 in place of the tellurium containing sulfonium salt 1 as the photoacid generator, and the rest of the conditions are carried out in a similar manner as Example 1 to obtain the resist compositions (H-2) to (H-12). 

[0192] Either one of the photoacid generators (B-1) to (B-4) are used by the formulation amount shown in Table 1 in place of the tellurium containing sulfonium salt 1 as the photoacid generator, and the rest of the conditions are carried out in a similar manner as Example 1 to obtain the resist compositions (H-13) to (H-24). 

[0193] Here, the photoacid generators (B-1) to (B-4) are shown below. 

## Comparative Examples 1 to 12 

## Example 1 

## Examples 2 to 12 

(A-3) 

