content_image/948527.jpg content_image/948528.jpg
2. The pattern forming method according to claim 1, 

wherein a top width/bottom width which is a ratio of the top width to the bottom width of the line pattern formed in Step (III) is 1.01 to 1.50. 

3. The pattern forming method according to claim 1, 

wherein a top width/bottom width which is a ratio of the top width to the bottom width of the line pattern formed in Step (III) is 1.05 to 1.30. 

4. The pattern forming method according to claim 1, 

wherein the thickness of the second film formed in Step (IV) is 5 nm to 30 nm. 

5. The pattern forming method according to claim 1, 

wherein the second film formed in Step (IV) is a silicon oxide film. 

6. The pattern forming method according to claim 1, 

wherein, in Step (IV), the line-and-space pattern is coated with the second film by a chemical vapor deposition method. 

7. The pattern forming method according to claim 6, 

wherein the coating with the second film by the chemical vapor deposition method is performed under tempera› ture conditions of 100° C. to 300° C. 

8. The pattern forming method according to claim 1, 

wherein a C Log P value of (B) the compound that gener› ates an acid by irradiation with active light or radiation is 0 to 4.0. 

9. The pattern forming method according to claim 1, 

wherein (B) the compound that generates an acid by irra› diation with active light or radiation is a compound represented by the following General Formula (IIIB-2), and 

<img src='content_image/948527.jpg'>

wherein, in the formula, 

x+ represents an organic cation, and 

Q$_{61 }$represents a group having an alicyclic group, a group having a lactone structure, a group having a sultone structure, or a group having a cyclic carbonate structure. 

10. A method for forming a patterned mask, comprising: 

Step (I) of forming a first film by applying an active light› sensitive or radiation-sensitive resin composition which contains (A) a resin having a repeating unit having a group that is decomposed by the action of an acid and generates a polar group and (B) a compound that gener› ates an acid by irradiation with active light or radiation to a substrate; 

Step (II) of exposing the first film; 

Step (III) of forming a first line-and-space pattern by devel› oping the exposed first film; 

Step (IV) of coating the first line-and-space pattern with a second film; 

Step (V) of removing the second film of an upper surface and a space portion of the line pattern in the first line› and-space pattern and leaving the second film only on the side wall of the line pattern; and 

Step (VI) of forming a second line-and-space pattern by removing the line pattern, 

(IIIB-2) 

wherein the top width of the line pattern of the first line› and-space pattern formed in Step (III) is larger than the bottom width thereof. 

11. The method for forming a patterned mask according to claim 10, 

wherein a top width/bottom width which is a ratio of the top width to the bottom width of the line pattern formed in Step (III) is 1.01 to 1.50. 

12. The method for forming a patterned mask according to claim 10, 

wherein a top width/bottom width which is a ratio of the top width to the bottom width of the line pattern formed in Step (III) is 1.05 to 1.30. 

13. The method for forming a patterned mask according to claim 10, 

wherein the thickness of the second film formed in Step (IV) is 5 nm to 30 nm. 

14. The method for forming a patterned mask according to claim 10, 

wherein the second film formed in Step (IV) is a silicon oxide film. 

15. The method for forming a patterned mask according to claim 10, 

wherein, in Step (IV), the pattern is coated with the second film by a chemical vapor deposition method. 

16. The method for forming a patterned mask according to claim 15, 

wherein the coating with the second film by the chemical vapor deposition method is performed under tempera› ture conditions of 100° C. to 300° C. 

17. The method for forming a patterned mask according to claim 10, 

wherein a C Log P value of the compound (B) that gener› ates an acid by irradiation with active light or radiation is 0 to 4.0. 

18. The method for forming a patterned mask according to claim 10, 

wherein the compound (B) that generates an acid by irra› diation with active light or radiation is a compound represented by the following General Formula (IIIB-2), and 

<img src='content_image/948528.jpg'>

wherein, in the formula, 

x+ represents an organic cation, and 

Q$_{61 }$represents a group having an alicyclic group, a group having a lactone structure, a group having a sultone structure, or a group having a cyclic carbonate structure. 

19. A method for manufacturing an electronic device, com› prising: 

the pattern forming method according to claim 1. 

20. A method for manufacturing an electronic device, com› prising: 

the method for forming a patterned mask according to claim 10. 

* * * * * 

(IIIB-2) 

