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# c12) United States Patent 

# Fukasawa et al. 

# (54) CMP POLISHING SLURRY AND METHOD OF POLISHING SUBSTRATE 

(75) Inventors: Masato Fukasawa, Hitachi (JP); Naoyuki Koyama, Hitachi (JP); Kouji Haga, Hitachi (JP); Toshiaki Akutsu, Hitachi (JP) 

(73) Assignee: Hitachi Chemical Company, Ltd., Tokyo (JP) 

( *) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 212 days. 

(21) Appl. No.: 12/768,082 

(22) Filed: Apr. 27, 2010 

## (65) Prior Publication Data 

US 2010/0210109 Al Aug. 19, 2010 

(62) Division of application No. 11/576,014, filed as application No. PCT/JP2005/017764 on Sep. 27, 2005, now abandoned. 

## (30) Foreign Application Priority Data 

Sep.28,2004 (JP) ................................. 2004-281508 

(51) Int. Cl. 

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(52) U.S. Cl. CPC ................ C09K 3/1463 (2013.01); C09G 1102 (2013.01) USPC ............................................. 51/307; 438/692 

( 58) Field of Classification Search USPC ......................................................... 252/79.1 See application file for complete search history. 

## (56) References Cited 

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## Related U.S. Application Data 

## U.S. PATENT DOCUMENTS 

<img src='content_image/939558.jpg'>

# (IO) Patent No.: US 8,900,335 B2 

# Dec. 2, 2014 (45) Date of Patent: 

## FOREIGN PATENT DOCUMENTS 

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Wako Specialty Chemicals, "V-50", http://www.wako-chem.co.jp/ specialty/waterazoN-50.htm. * 

Japanese Office Action dated Jul. 14, 2009 ( dispatch date), issued in corresponding Japanese Patent Application No. 2006-523471. 

T. Honma et al, "Effect of various Factors on Grinding Using Jet Mill", Chemical Engineering Paper Collection, vol. 6, No. 5, 1980, pp. 527-532. English Abstract. 

International Search Report of PCT/JP2005/017764, mailing date of Nov. 8, 2005. 

Korean Office Action dated Feb. 29, 2008, issued in corresponding Korean Patent Application No. 10-2007-7005762. 

Taiwanese Office Action dated May 22, 2008, issued in correspond› ing Taiwanese Patent Application No. 09720260260. 

English Translation of Chemical Handbook (Basic) Revised Ed., 4th, Sep. 30, 1993, pp. II-317-II-322, Chemical Society of Japan Ed, Maruzen Co., Ltd. 

Japanese Office Action dated Dec. 15, 2009, issued in corresponding Patent Application 2006-523471. 

Japanese Office Action dated Jan. 5, 2010 (mailing date), issued in corresponding Japanese Patent Application No. 2006-523471. 

Japanese Office Action dated Feb. 22, 2011, issued in corresponding Japanese Patent Application No. 2006-523471. 

Chinese Office Action dated Apr. 13, 2010, issued in corresponding Chinese Patent Application No. 2008101461550. 

* cited by examiner 

Primary Examiner - Kaj K Olsen 

Assistant Examiner - Ross J Christie 

(74) Attorney, Agent, or Firm - Westerman, Hattori, Daniels & Adrian, LLP 

## (57) ABSTRACT 

A CMP polishing slurry of the present invention contains cerium oxide particles, water, and a polymer of at least one of a methacrylic acid and the salt thereof, and/or a polymer of at least one of a methacrylic acid and the salt thereof and a monomer having an unsaturated double bond, preferably con› tains furthermore a dispersant or a polymer of monomers containing at least one of an acrylic acid and the salt thereof. The present invention provides a CMP polishing slurry and a polishing method that, after polishing, give a polished film having a smaller difference in residual film thickness due to a pattern density difference. 

US008900335B2 

## OTHER PUBLICATIONS 

## 8 Claims, No Drawings 

