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# c19) United States c12) Patent Application Publication 

# KAWABATA et al. 

# (54) ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 

(71) Applicant: FUJIFILM CORPORATION, Tokyo (JP) 

(72) Inventors: Takeshi KAWABATA, Haibara-gun (JP); Hideaki TSUBAKI, Haibara-gun (JP); Hiroo TAKIZAWA, Haibara-gun (JP); Natsumi YOKOKAWA, Haibara-gun (JP) 

(73) Assignee: FUJIFILM CORPORATION, Tokyo (JP) 

(21) Appl. No.: 14/554,344 

(22) Filed: Nov. 26, 2014 

( 63) Continuation of application No. PCT /JP2013/065770, filed on May 31, 2013. 

## (30) Foreign Application Priority Data 

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## Related U.S. Application Data 

<img src='content_image/888490.jpg'>

(51) Int. Cl. 

(52) U.S. Cl. CPC ........ G03F 710388 (2013.01); C08F 216/1416 (2013.01); C08F 216110 (2013.01); C08F 220130 (2013.01); C08F 216114 (2013.01); C08F 2220/301 (2013.01) USPC 430/18; 430/325; 430/319; 526/243; 526/256; 526/270; 526/287 

## (57) ABSTRACT 

There is provided an actinic ray-sensitive or radiation-sensi› tive resin composition comprising (P) a resin having a repeat› ing unit (A) represented by the specific formula (I) capable of generating an acid on the side chain of the resin upon irradia› tion with an actinic ray or radiation, and a resist film formed with the actinic ray-sensitive or radiation-sensitive resin com› position, and a pattern forming method comprising: exposing the resist film, and developing the exposed resist film, and a method for manufacturing a semiconductor device, contain› ing the pattern forming method, and a semiconductor device manufactured by the manufacturing method of the semicon› ductor device. 

US 20150086912Al 

# c10) Pub. No.: US 2015/0086912 Al 

# (43) Pub. Date: Mar. 26, 2015 

## Publication Classification 

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