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# c19) United States c12) Patent Application Publication 

# Moore 

# (54) REMOVAL OF SILICA BASED ETCH RESIDUE USING AQUEOUS CHEMISTRY 

(75) Inventor: John C. Moore, Camarillo, CA (US) 

Correspondence Address: ARTHUR J. PLANTAMURA GENERAL CHEMICAL PERFORMANCE PRODUCTS LLC. 90 EAST HALSEY ROAD PARSIPPANY, NJ 07054 (US) 

(73) Assignee: GENERAL CHEMICAL PERFOR› MANCE PRODUCTS, LLC, Parsip› pany, NJ (US) 

(21) Appl. No.: 11/307,556 

(22) Filed: Feb. 13, 2006 

(51) Int. Cl. CllD 7132 (2006.01) 

## Publication Classification 

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US 20070191243Al 

# c10) Pub. No.: US 2007 /0191243 Al 

# (43) Pub. Date: Aug. 16, 2007 

U.S. Cl. .............................................................. 510/175 

## (57) ABSTRACT 

Removal of silica-based etch residue is effected by use of an aqueous chemistry which eliminates hazard concerns in connection with electronic component fabrication tooling. The system employs a formulated product comprising a controlled level of ionized fluorine in a citrate buffer con› taining a dual surfactant system for etch residue penetration and rinsing. The combined system is proven to be ideal for Si-based etch residue dissolution and removal. The Si› residue removal rates have been characterized at specific buffered pH values and normal process conditions at times between 45 sec. to 3 min., and with those described being effectual at times of the order of 45 sec. or less when processed in a single-wafer tool. The product simplifies and reduces cost time and materials. 

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