content_image/886455.jpg content_image/886456.jpg content_image/886457.jpg content_image/886458.jpg
Z$^{32}$-Z 31 -, Z $^{31 }$is a C$_{1}$-C$_{6 }$ straight, branched or cyclic alkylene group which may contain a carbonyl, ester, ether or hydroxyl moiety, or Z 31 is a C$_{2}$ -C$_{6 }$ straight, branched or cyclic alkenylene group which may con› tain a carbonyl, ester, ether or hydroxyl moiety, or Z 31 is a phenylene, fluorinated phenylene or trifluorom› ethyl-substituted phenylene group, Z 32 is -0- or -NH-, 1 

A is hydrogen or trifluoromethyl, and M- is a non› nucleophilic counter ion. 

10. The resist composition of claim 9 which is a chemi› cally amplified positive resist composition. 

11. The resist composition of claim 9 wherein the qua› ternary ammonium salt has the formula (1) or (2): 

wherein R$^{1 }$to R 4 and Rs to R$^{10 }$are each independently a C$_{1 }$-C$_{24 }$straight, branched or cyclic alkyl group, C$_{2}$ -C$_{24}$ straight, branched or cyclic alkenyl group, C$_{2}$ -C$_{24 }$ straight, branched or cyclic alkynyl group, or C -C 1 1 4 s 10 6 24 ary group, R to R and R to R may contain a halogen, hydroxyl, carboxyl, ether, ester, thiol, thio› ester, thionoester, dithioester, amino, nitro, sulfone or ferrocenyl moiety, a pair ofR 1 and R 2 R $^{1 }$and R 4 R 2 3 3 ’ ’ and R , and/or R and R $^{4 }$may bond together to form a ring, or a pair of R 1 and R 2 , R $^{1 }$and R 4 R 2 and R 3 or 3 4 ’ ’ R and R , taken together, may form a double bond, R 11 is a C$_{2}$ -C$_{12 }$straight, branched or cyclic alkylene group which may contain an ether and/or ester moiety, x- is an anion selected from the group consisting on-, Br $_{2}$1-, BrI$_{2}$ - and 1$_{3}$-. 

12. A pattern forming process comprising the steps of coating the resist composition of claim 9 onto a substrate baking, exposing the resulting resist film to high-energ; radiation, and developing the resist film with a developer. 

<img src='content_image/886455.jpg'>

<img src='content_image/886456.jpg'>

13. A chemically amplified negative resist composition comprising 

a quencher containing a quaternary ammonium salt selected from the group consisting of a quaternary ammonium iodide, quaternary ammonium dibromoio› dide, quaternary ammonium bromodiiodide, and qua› ternary ammonium triiodide, 

an acid generator, and a base polymer, 

wherein the base polymer is an acid labile group free polymer. 

14. The resist composition of claim 13 wherein the quaternary ammonium salt has the formula (1) or (2): 

wherein R$^{1 }$to R 4 and Rs to R$^{10 }$are each independently a C$_{1 }$-C$_{24 }$straight, branched or cyclic alkyl group, C$_{2}$ -C$_{24 }$ straight, branched or cyclic alkenyl group, C$_{2}$ -C$_{24 }$ straight, branched or cyclic alkynyl group, or C -C 1 1 4 s 6 24 ary group, R to R and R to R 10 may contain a halogen, hydroxyl, carboxyl, ether, ester, thiol, thio› ester, thionoester, dithioester, amino, nitro, sulfone or ferrocenyl moiety, a pair ofR 1 and R 2 R $^{1 }$and R 4 R 2 3 3 4 ’ ’ and R , and/or R and R may bond together to form a ring, or a pair ofR 1 and R 2 , R $^{1 }$and R 4 R 2 and R 3 or 3 4 ’ ’ R and R , taken together, may form a double bond, R 11 is a C$_{2}$-C$_{12 }$straight, branched or cyclic alkylene group which may contain an ether and/or ester moiety, x- is an anion selected from the group consisting on-, Br $_{2}$1-, BrI$_{2}$ - and 1$_{3}$-. 

15. A pattern forming process comprising the steps of coating the resist composition of claim 13 onto a substrate, baking, exposing the resulting resist film to high-energy radiation, and developing the resist film with a developer. 

<img src='content_image/886457.jpg'>

<img src='content_image/886458.jpg'>

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