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# c12) United States Patent 

# Hatakeyama et al. 

# (54) RESIST COMPOSITION AND PATTERNING PROCESS 

(71) Applicant: Shin-Etsu Chemical Co., Ltd., Tokyo (JP) 

(72) Inventors: Jun Hatakeyama, Joetsu (JP); Masaki Ohashi, Joetsu (JP); Masahiro Fukushima, Joetsu (JP); Takayuki Fujiwara, Joetsu (JP) 

(73) Assignee: SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP) 

( *) Notice: Subject to any disclaimer, the term ofthis patent is extended or adjusted under 35 U.S.C. 154(b) by 176 days. This patent is subject to a terminal dis› claimer. 

(21) Appl. No.: 16/130,271 

(22) Filed: Sep. 13, 2018 

## (65) Prior Publication Data 

US 2019/0094690 Al Mar. 28, 2019 

## (30) Foreign Application Priority Data 

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(51) Int. Cl. 

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(52) U.S. Cl. CPC .......... G03F 710045 (2013.01); C08K 510025 (2013.01); C08K 5142 (2013.01); C08L 33/14 (2013.01); C08L 41100 (2013.01); C09D 125108 (2013.01); C09D 133/10 (2013.01); G03F 710395 (2013.01); G03F 710397 (2013.01); C08F 12/16 (2013.01); C08F 12/24 (2013.01); C08L 25/18 (2013.01); C08L 2312/00 (2013.01) 

( 58) Field of Classification Search CPC ....................................................... G03F 7/004 See application file for complete search history. 

<img src='content_image/909210.jpg'>

# (IO) Patent No.: US 10,871,711 B2 

# (45) Date of Patent: *Dec. 22, 2020 

## (56) References Cited 

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Yamamoto et al., "Polymer-Structure Dependence of Acid Gernera› tion in Chemically Amplified Extreme Ultraviolet Resists", Japa› nese Journal of Applied Physics, (2007), vol. 46, No. 7, pp. Ll42-Ll44, Cited in Specification. (6 pages). 

Wang et al., "Photobase generator and photo decomposable quencher for high-resolution photoresist applications," SPIE vol. 7639, 2010, p. 76390Wl-15. 

Lio, "EUV Resists: What’s Next?," SPIE vol. 9776, 2016, p. 97760V-l-14. 

Office Action dated Feb. 26, 2018, issued in Taiwanese Application No. 106121402. (12 pages). 

Non-Final Office Action dated Jun. 27, 2019, issued in U.S. Appl. No. 15/920,641 (10 pages). 

Non-Final Office Action dated Aug. 9, 2018, issued in U.S. Appl. No. 15/623,561 (8 pages). 

* cited by examiner 

Primary Examiner - Chanceity N Robinson (74) Attorney, Agent, or Firm - Westerman, Hattori, Daniels & Adrian, LLP 

## (57) ABSTRACT 

A resist composition is provided comprising a base polymer containing an iodized polymer, and an acid generator con› taining a sulfonium salt and/or iodonium salt of iodized benzene ring-containing fluorosulfonic acid. When pro› cessed by lithography, the resist composition exhibits a high sensitivity, low LWR and improved CDU independent of whether it is of positive tone or negative tone. 

US010871711B2 

## U.S. PATENT DOCUMENTS 

## FOREIGN PATENT DOCUMENTS 

## OTHER PUBLICATIONS 

## 19 Claims, No Drawings 

