relative to 100 parts by weight of the component (A’). When the amount of the component (B) is within the above-men› tioned range, formation of a resist pattern can be satisfactorily performed. Further, by virtue of the above-mentioned range, a uniform solution can be obtained and the storage stability becomes satisfactory. 

[1079] <Component (D’)> 

[1080] In order to improve factors such as the resist pattern shape and the post exposure stability of the latent image formed by the pattern-wise exposure of the resist layer, in the first positive resist composition, a nitrogen-containing organic compound (D’) (hereafter referred to as "component (D’)") can be added as an optional component. 

[1081] A multitude of these components (D’) have already been proposed, and any of these known compounds may be used. As the component (D’), the same compounds as those for the component (D) described above in relation to the resist composition according to the first aspect of the present inven› tion can be used. 

[1082] As the component (D’), one type of these nitrogen› containing organic compounds may be used alone, or two or more types may be used in combination. 

[1083] The component (D’) is typically used in an amount within a range from 0.01 to 5.0parts by weight, relative to 100 parts by weight of the component (A’). 

[1084] <Component (E’)> 

[1085] Furthermore, in the first positive resist composition, for preventing any deterioration in sensitivity, and improving the resist pattern shape and the post exposure stability of the latent image formed by the pattern-wise exposure of the resist layer, at least one compound (E’) (hereafter referred to as "component (E’)") selected from the group consisting of an organic carboxylic acid, or a phosphorus oxo acid or deriva› tive thereof can be added as an optional component. 

[1086] A multitude of these components (E’) have already been proposed, and any of these known compounds may be used. As the component (E’), the same compounds as those for the component (E) described above in relation to the resist composition according to the first aspect of the present inven› tion can be used. 

[1087] As the component (E’), one type of these com› pounds may be used alone, or two or more types may be used in combination. 

[1088] As the component (E’), an organic carboxylic acid is preferable, and salicylic acid is particularly desirable. 

[1089] The component (E’) is typically used in an amount within a range from 0.01 to 5.0parts by weight, relative to 100 parts by weight of the component (A’). 

[1090] If desired, other miscible additives can also be added to the first positive resist composition. Examples of such miscible additives include additive resins for improving the performance of the resist film, surfactants for improving the applicability, dissolution inhibitors, plasticizers, stabiliz› ers, colorants, halation prevention agents, and dyes. 

[1091] <Component (S’)> 

[1092] The first positive resist composition can be prepared by dissolving the materials for the resist composition in an organic solvent (hereafter, frequently referred to as "compo› nent (S’)"). 

[1093] The component (S’) may be any organic solvent which can dissolve the respective components to give a uni› form solution, and any one or more kinds of organic solvents 

can be appropriately selected from those which have been conventionally known as solvents for a chemically amplified resist. 

[1094] As the component (S’), the same organic solvents as those for the component (S3) described above in relation to the resist composition according to the first aspect of the present invention can be used. 

[1095] These components (S’) can be used either alone, or in combinations of two or more different solvents. 

[1096] In the first positive resist composition, as the com› ponent (S’), propylene glycol monomethyl ether acetate (PG› MEA), propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) are preferable. 

[1097] Further, among the mixed solvents, a mixed solvent obtained by mixing PGMEA with a polar solvent is prefer› able. The mixing ratio (weight ratio) of the mixed solvent can be appropriately determined, taking into consideration the compatibility of the PGMEA with the polar solvent, but is preferably in the range ofl :9 to 9: 1, more preferably from 2:8 to 8:2. 

[1098] Specifically, when EL is mixed as the polar solvent, the PGMEA:EL weight ratio is preferably from 1:9 to 9:1, and more preferably from 2:8 to 8:2. Alternatively, when PGME is mixed as the polar solvent, the PGMEA:PGME is preferably from 1:9 to 9: 1, more preferably from 2:8 to 8:2, and still more preferably 3:7 to 7:3. 

[1099] Further, as the component (S’), a mixed solvent of at least one of PGMEA and EL with y-butyrolactone is also preferable. The mixing ratio (former:latter) of such a mixed solvent is preferably from 70:30 to 95:5. 

[1100] There are no particular limitations on the overall amount used of the component (S’), and an amount that pro› duces a liquid having a concentration that is suitable for application of the first positive resist composition onto a substrate is used. 

[1101] If desired, other miscible additives can also be added to the chemically amplified positive resist composi› tion. Examples of such miscible additives include additive resins for improving the performance of the resist film, sur› factants for improving the applicability, dissolution inhibi› tors, plasticizers, stabilizers, colorants, halation prevention agents, and dyes. 

[1102] By employing the method of forming a resist pattern according to the present invention, in a double patterning process, it is less likely to be adversely affected by the second patterning. 

[1103] Further, by employing the method of forming a resist pattern according to the present invention, the differ› ence in the size of the first resist pattern becomes small before and after the second patterning, and it becomes possible to form a resist pattern with high resolution and excellent shape. Furthermore, by employing the method of forming a resist pattern according to the present invention, there is no need to use a freezing agent or the like, which results in improved workability. 

[1104] As the method of forming a resist pattern, a cross› line patterning method is preferable, which is a method including: applying a positive resist composition as a first resist composition on a substrate to form a first resist film on the substrate; subjecting the first resist film to selective expo› sure and alkali developing to form a first line and space resist pattern; applying the resist composition of the present inven› tion as a second resist composition on the substrate on which the first line and space resist pattern is formed to form a 

