ing surfactants can be used. Examples of the fluorine› containing and/or silicon-containing surfactants include sur› factants described in JP-A-62-36663, JP-A-61-226746, JP-A-61-226745, JP-A-62-170950, JP-A-63-34540, JP-A- 7-230165, JP-A-8-62834, JP-A-9-54432, JP-A-9-5988 and U.S. Pat. Nos. 5,405,720, 5,360,692, 5,529,881, 5,296,330, 5,436,098, 5,576,143, 5,294,511 and 5,824,451. A nonionic surfactant is preferred. The nonionic surfactant is not par› ticularly limited, but use of a fluorine-containing surfactant or a silicon-containing surfactant is more preferred. 

The amount of the surfactant used is usually from 0.001 to 5 mass %, preferably from 0.005 to 2 mass %, more preferably from 0.01 to 0.5 mass %, based on the total amount of the developer. 

Also, the organic developer may contain an appropriate amount of a basic compound, if desired. Examples of the basic compound include those described above in the para› graph of [ 6] Basic Compound. 

In the pattern forming method of the present invention, a step of performing development by using an organic sol› vent-containing developer ( organic solvent development step) and a step of performing development by using an aqueous alkali solution ( alkali development step) may be used in combination. Thanks to this combination, a finer pattern can be formed. 

In the present invention, the portion of low exposure intensity is removed in the organic solvent development step, and by further performing the alkali development step, the portion of high exposure intensity is also removed. By virtue of the multiple development process of performing development a plurality of times in this way, a pattern can be formed by keeping only the region of intermediate exposure intensity from being dissolved, so that a finer pattern than usual can be formed (the same mechanism as in [0077] of JP-A-2008-292975). 

In the pattern forming method of the present invention, the order of the alkali development step and the organic solvent development step is not particularly limited, but the alkali development is preferably performed before the organic solvent development step. 

As regards the developing method, for example, a method of dipping the substrate in a bath filled with the developer for a fixed time ( dipping method), a method of raising the developer on the substrate surface by the effect of a surface tension and keeping it still for a fixed time, thereby per› forming the development (puddling method), a method of spraying the developer on the substrate surface (spraying method), and a method of continuously ejecting the devel› oper on the substrate spinning at a constant speed while scanning a developer ejecting nozzle at a constant rate ( dynamic dispense method) may be applied. 

In the case where the above-described various developing methods include a step of ejecting the developer toward the resist film from a development nozzle of a developing apparatus, the ejection pressure of the developer ejected (the flow velocity per unit area of the developer ejected) is preferably 2 mL/sec/mm 2 or less, more preferably 1.5 mL/sec/mm 2 or less, still more preferably 1 mL/sec/mm 2 or less. The flow velocity has no particular lower limit but in 60 view of throughput, is preferably 0.2 mL/sec/mm 2 or more. 55 

By setting the ejection pressure of the ejected developer to the range above, pattern defects attributable to the resist scum after development can be greatly reduced. 

Details of this mechanism are not clearly known, but it is considered that thanks to the ejection pressure in the above› described range, the pressure imposed on the resist film by 

the developer becomes small and the resist film or resist pattern is kept from inadvertent chipping or collapse. 2 

Here, the ejection pressure (mL/sec/mm ) of the devel› oper is a value at the outlet of a development nozzle in a developing apparatus. 

Examples of the method for adjusting the ejection pres› sure of the developer include a method of adjusting the ejection pressure by a pump or the like, and a method of supplying the developer from a pressurized tank and adjust- ing the pressure to change the ejection pressure. 

After the step of performing development by using an organic solvent-containing developer, a step of stopping the development by replacing the solvent with another solvent may be practiced. 

The pattern forming method may include a step of rinsing the film with a rinsing solution after the step of performing development by using an organic solvent-containing devel› oper, but in view of, for example, throughput (productivity) and the amount of rinsing solution used, it is preferred not to include a step of rinsing the film with a rinsing solution. 

The rinsing solution used in the rinsing step after the step of performing development by using an organic solvent› containing developer is not particularly limited as long as it does not dissolve the resist pattern, and a solution containing a general organic solvent may be used. As the rinsing solution, a rinsing solution containing at least one kind of an organic solvent selected from the group consisting of a hydrocarbon-based solvent, a ketone-based solvent, an ester› based solvent, an alcohol-based solvent, an amide-based solvent and an ether-based solvent is preferably used. 

Specific examples of the hydrocarbon-based solvent, ketone-based solvent, ester-based solvent, alcohol-based solvent, amide-based solvent and ether-based solvent are the same as those described above for the organic solvent› containing developer. 

After the step of performing development by using an organic solvent-containing developer, more preferably, a step of rinsing the film by using a rinsing solution containing at least one kind of an organic solvent selected from the group consisting of a ketone-based solvent, an ester-based solvent, an alcohol-based solvent and an amide-based sol› vent is preformed; still more preferably, a step of rinsing the film by using a rinsing solution containing an alcohol-based solvent or an ester-based solvent is performed; yet still more preferably, a step of rinsing the film by using a rinsing solution containing a monohydric alcohol is performed; and most preferably, a step of rinsing the film by using a rinsing solution containing a monohydric alcohol having a carbon number of 5 or more is performed. 

The monohydric alcohol used in the rinsing step includes a linear, branched or cyclic monohydric alcohol, and specific examples of the monohydric alcohol which can be used include 1-butanol, 2-butanol, 3-methyl-1-butanol, tert-butyl alcohol, 1-pentanol, 2-pentanol, 1-hexanol, 4-methyl-2-pen› tanol, 1-heptanol, 1-octanol, 2-hexanol, cyclopentanol, 2-heptanol, 2-octanol, 3-hexanol, 3-heptanol, 3-octanol and 4-octanol. As for the particularly preferred monohydric alcohol having a carbon number of 5 or more, 1-hexanol, 2-hexanol, 4-methyl-2-pentanol, 1-pentanol, 3-methyl-1-bu› tanol and the like can be used. 

A plurality of these components may be mixed, or the solvent may be used by mixing it with an organic solvent other than those described above. 

The percentage water content in the rinsing solution is preferably 10 mass % or less, more preferably 5 mass % or less, still more preferably 3 mass % or less. By setting the percentage water content to 10 mass % or less, good development characteristics can be obtained. 

