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## ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE 

## CROSS REFERENCE TO RELATED APPLICATION 

This is a continuation of International Application No. PCT/JP2013/070833 filed on Jul. 25, 2013, and claims priority from Japanese Patent Application No. 2012-167814 filed on Jul. 27, 2012, and Japanese Patent Application No. 2013-054400 filed on Mar. 15, 2013 the entire disclosures of which are incorporated therein by reference. 

The present invention relates to an actinic ray-sensitive or radiation-sensitive resin composition, a resist film using the same, a pattern forming method, a manufacturing method of $^{20}$ an electronic device, and an electronic device. More spe- 25 cifically, the present invention relates to an actinic ray› sensitive or radiation-sensitive resin composition suitably used in the ultramicrolithography process applicable to, for example, a process for producing VLSI or a high-capacity microchip, a process for fabricating a nanoimprint mold, and 30 a process for producing a high-density information record› ing medium, as well as in other photofabrication processes, a resist film using the same, a pattern forming method, a manufacturing method of an electronic device, and an elec› tronic device. 35 

In the process for producing a semiconductor device such as IC and LSI, microfabrication by lithography using a photoresist composition has been conventionally performed. Recently, with the increase in integration of an integrated circuit, formation of an ultrafine pattern in the sub-micron or quarter-micron region is required. To cope with this require› ment, the exposure wavelength also tends to become shorter, for example, from g line to i line or further to KrF excimer laser light. At present, other than the excimer laser light, development of lithography using an electron beam, an X-ray or EUV light is also proceeding. 

Such electron beam, X-ray or EUV light lithography is positioned as a next-generation or next-next-generation pat› tern formation technology, and a high-sensitivity and high› resolution resist composition is being demanded. 

In particular, for shortening the wafer processing time, elevation of sensitivity is an important task, but when higher sensitivity is pursued, this causes deterioration in the pattern profile or the resolution represented by the limiting resolu› tion line width, and development of a resist composition satisfying all of these characteristics at the same time is strongly demanded. 

High sensitivity is in a trade-off relationship with high resolution and good pattern profile, and it is important how to satisfy all of these properties at the same time. 

In order to solve such a problem, for example, in JP-A- 8-101507 (the term "JP-A" as used herein means an "unex- amined published Japanese patent application"), JP-A-2000- 29215, a positive resist composition using a resin having an 

## TECHNICAL FIELD 

## BACKGROUND ART 

acetal-type protective group is disclosed, and it is stated that according to this composition, the resolution, sensitivity and the like are improved. 

In the positive image forming method, an isolated line or dot pattern can be successfully formed using this composi› tion, but in the case of forming an isolated space or fine hole pattern, the pattern profile is liable to deteriorate. 

In addition, a pattern forming method using an organic solvent-containing developer ( organic developer) is also being developed recently (see, for example, JP-A-2010- 217884). This method is supposed to enable stable formation of a high-definition fine pattern. 

Furthermore, in recent years, the need for formation of a finer isolated space pattern or micronization of a hole pattern is abruptly increasing, as a result, in the case of forming a fine isolated space pattern having a space width of 100 nm or less, more performance improvement in terms of sensi› tivity, resolution and space width roughness is demanded. Similarly, in the case of forming a hole pattern having a fine hole diameter (for example, 50 nm or less), more perfor- mance improvement in terms of high resolution, good expo› sure latitude (EL) and local pattern dimension uniformity (Local-CDU) is demanded. 

An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition ensur› ing that in the case of forming a fine isolated space pattern with a space width of 100 nm or less, the sensitivity, resolution and space width roughness performance are excellent and in the case of forming a hole pattern having a fine hole diameter (for example, 50 nm or less), high resolution, good EL and excellent local pattern dimension uniformity (Local-CDU) are achieved, a resist film using the same, a pattern forming method, a manufacturing method of an electronic device, and an electronic device. [1] An actinic ray-sensitive or radiation-sensitive resin com› position comprising: 

(A) a resin containing a repeating unit represented by the following formula (1-1) and a repeating unit represented by the following formula (1-2), 

wherein the content of the repeating unit represented by the following formula (1-1) is 35 mo!% or more based on all repeating units in the resin (A): 

<img src='content_image/907940.jpg'>

<img src='content_image/907941.jpg'>

wherein in formula (1-1 ), 

R$_{1 }$ represents an alkyl group or a cycloalkyl group, 

R$_{2 }$ represents an alkyl group or a cycloalkyl group, 

## SUMMARY OF INVENTION 

