In a 50 mL round bottom flask, 3 was dissolved in dichlo› romethane (10 mL) and stirred under nitrogen. Triflic acid (0.1 mo!%) was added and stirred for 4 hours. The solvent was removed under vacuum and the resulting residue 4 was obtained and characterized by $^{1 }$H NMR and MALDI MS. 

In a 50 mL round bottom flask, 3 was dissolved in dichlo› romethane (10 mL) and stirred under nitrogen. Triflic acid (0.1 mo!%) was added and stirred for 0.5 hours to partially hydrolyze the 4-t-butoxycarbonyl groups. The solvent was removed under vacuum and the resulting residue 4 was obtained and characterized by $^{1}$H NMR and MALDI MS. 

Into 100 mL of propylene glycol monomethyl ether (PGME) was added 0.25 g of methanofullerene I, 0.50 g of poly[(o-cresyl glycidyl ether)-co-formaldehyde] and 0.25 g oftriphenylsulfonium hexafluoroantimonate and stirred for 1 hr at room temperature. The composition was applied to a silicon wafer and spin coated at 500 rpm for 5 sec followed by 2000 rpm for 60 sec. The coated wafer was then heated on a hot plate at 7 5° C. for 5 min to give a film of approximately 25 mn. The wafer was imagewise exposed to synchrotron based EUV light at 13-14 mn wavelength at 31.2 mJ/cm $^{2 }$and post exposure baked at 90° C. for 3 min. The unexposed areas were removed by puddle development in a 50:50 blend of monochlorobenzene and isopropyl alcohol for 20 sec fol- lowed by an isopropyl alcohol rinse. FIG. 1 shows the result› ing 22 mn lines and spaces for example 1. 

Example 1 was repeated but 150 mL of PGME was used to reduce the solids content. The resulting film thickness was 18 mn and the exposure was 21.2 mJ/cm 2 . FIG. 2 shows the resulting 18 mn lines and spaces for example 2. 

Example 1 was repeated using methanofullerene II in place of methanofullerene I. A 48 mJ/cm 2 exposure dosage was used. FIG. 3 shows the resulting 25 mn lines and spaces for 50 example 3. 

Example 1 was repeated using an E-beam exposure in place of 13-14 mn exposure. Area dose testing established a sensitivity of 90 µC/cm2 at 30 keV. For high resolution pat› terning a line dose of 575 pC/cm was applied at a nominal half-pitch of 50 mn, given lines of -20 mn with -30 mn spaces. FIG. 4 shows the resulting lines and spaces for example 4. 

Example 3 was repeated using an E-beam exposure of 90 µC/cm 2 at 30 keV in place of 13-14 mn exposure. For high resolution patterning a line dose of 575 pC/cm was applied at 

Synthesis of (3-phenol-1-propyl malonate )-methano-[ 60]fullerene ( 4) 

Synthesis of ((3-phenol-1-propyl)-(3-( 4-t-butoxycar› bonyl)-phenyl-1-propyl) malonate) methano-[60] fullerene 

## Composition Example 1 

## Composition Example 2 

## Composition Example 3 

## Composition Example 4 

## Composition Example 5 

a nominal half-pitch of 50 mn, given lines of-20 mn with-30 mn spaces FIG. 5 shows the resulting lines and spaces for the example 5. 

The formulation of Example 1 was repeated using 0.125 g of methanofullerene I and 0.125 g of a methanofullerene having tetraethylene glycol esters capped with acetic acid to provide acetate esters. The composition was applied to a silicon wafer and spin coated at 500 rpm for 5 sec followed by 2000 rpm for 60 sec. The coated wafer was then heated on a hot plate at 75° C. for 5 min to give a film of approximately 25 mn. The wafer was imagewise exposed to 40 µC/cm 2 of E-beamradiationand post exposure baked at 90° C. for3 min. For high resolution patterning a line dose of 600 pC/cm was applied at a nominal half-pitch of 50 mn, given lines of -20 mn with -30 mn spaces The unexposed areas were removed by puddle development in a 50:50 blend ofmonochloroben- zene and isopropyl alcohol for 20 sec followed by an isopro› pyl alcohol rinse. FIG. 6 shows the resulting lines and spaces for example 6. 

Into 100 mL of propylene glycol monomethyl ether (PGME) was added 0.50 g of polyhydroxystyrene, 1.00 g of poly[(o-cresyl glycidyl ether)-co-formaldehyde] and 0.50 g oftriphenylsulfonium hexafluoroantimonate and stirred for 1 hr at room temperature. The composition was applied to a silicon wafer and spin coated at 500 rpm for 5 sec followed by 2000 rpm for 60 sec. The coated wafer was then heated on a hot plate at 70° C. for 5 min to give a film of approximately 80 mn. The wafer was imagewise exposed to 30 ke VE-beam and post exposure baked at 90° C. for 2 min. The unexposed areas were removed by puddle development in a 50:50 blend of monochlorobenzene and isopropyl alcohol for 20 sec fol› lowed by an isopropyl alcohol rinse. A line dose of 118 pC/cm was applied, given an isolated line of -20 mn. FIG. 7 shows the resulting line for example 7. 

Example 7 was repeated using 0.5% polyhydroxystyrene which was 95.5% protected with t-BOC in place of the poly› hydroxystyrene. A line dose of 118 pC/cm was applied, giv› ing an isolated line of-22 mn. FIG. 8 shows the resulting line for example 8. 

Into 100 mL of ethyl lactate was added 0.25 g of polyhy› droxystyrene, 0.50 g of poly[(o-cresyl glycidyl ether)-co› formaldehyde] and 0.25 g of triphenylsulfonium hexafluoro- antimonate and stirred for 1 hr at room temperature. The composition was applied to a silicon wafer and spin coated at 500 rpm for 5 sec followed by 1200 rpm for 80 sec. The coated wafer was thenheatedonahotplate at 70° C. for 5 min to give a film of approximately 30 mn. The wafer was imagewise exposed to 30 keV E-beam and post exposure baked at 110° C. for 2 min. The unexposed areas were removed by puddle development in a 50:50 blend of monochlorobenzene and isopropyl alcohol for 20 sec followed by an isopropyl alcohol rinse. A line dose of 88 pC/cm was applied at a nominal half-pitch of 25 mn, given lines of -20 mn with -30 mn spaces. FIG. 9 shows the resulting lines and spaces for the example 9. 

## Composition Example 6 

## Composition Example 7 

## Composition Example 8 

## Composition Example 9 

