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alkynes of 6 to 12 carbon atoms, and aromatic solvents. Specifically, suitable alcohols of 3 to 10 carbon atoms include n-propyl alcohol, isopropyl alcohol, I-butyl alcohol, 2-butyl alcohol, isobutyl alcohol, t-butyl alcohol, 1-penta› nol, 2-pentanol, 3-pentanol, t-pentyl alcohol, neopentyl alcohol, 2-methyl-1-butanol, 3-methyl-1-butanol, 3-methyl- 3-pentanol, cyclopentanol, 1-hexanol, 2-hexanol, 3-hexanol, 2,3-dimethyl-2-butanol, 3,3-dimethyl-1-butanol, 3,3-dim› ethyl-2-butanol, 2-ethyl-1-butanol, 2-methyl-1-pentanol, 2-methyl-2-pentanol, 2-methyl-3-pentanol, 3-methyl-1-pen- tanol, 3-methyl-2-pentanol, 3-methyl-3-pentanol, 4-methyl- 1-pentanol, 4-methyl-2-pentanol, 4-methyl-3-pentanol, cyclohexanol, and 1-octanol. Suitable ether compounds of 8 to 12 carbon atoms include di-n-butyl ether, diisobutyl ether, di-s-butyl ether, di-n-pentyl ether, diisopentyl ether, di-s- pentyl ether, di-t-pentyl ether, and di-n-hexyl ether. Suitable alkanes of 6 to 12 carbon atoms include hexane, heptane, octane, nonane, decane, undecane, dodecane, methylcyclo› pentane, dimethylcyclopentane, cyclohexane, methylcyclo› hexane, dimethylcyclohexane, cycloheptane, cyclooctane, and cyclononane. Suitable alkenes of 6 to 12 carbon atoms include hexene, heptene, octene, cyclohexene, methylcyclo› hexene, dimethylcyclohexene, cycloheptene, and cyclooctene. Suitable alkynes of 6 to 12 carbon atoms include hexyne, heptyne, and octyne. Suitable aromatic solvents include toluene, xylene, ethylbenzene, isopropyl› benzene, t-butylbenzene and mesitylene. The solvents may be used alone or in admixture. 

Rinsing is effective for minimizing the risk of resist pattern collapse and defect formation. However, rinsing is not essential. If rinsing is omitted, the amount of solvent used may be reduced. 

A hole or trench pattern after development may be shrunk by the thermal flow, RELACSfi or DSA process. A hole pattern is shrunk by coating a shrink agent thereto, and baking such that the shrink agent may undergo crosslinking at the resist surface as a result of the acid catalyst diffusing from the resist layer during bake, and the shrink agent may attach to the sidewall of the hole pattern. The bake is preferably at a temperature of 70 to 180° C., more preferably 80 to 170° C., for a time of 10 to 300 seconds. The extra shrink agent is stripped and the hole pattern is shrunk. 

Examples of the invention are given below by way of illustration and not by way of limitation. The abbreviation "pbw" is parts by weight. 

Quenchers 1 to 12 in the form of quaternary ammonium iodide, quaternary animonium dibromoiodide, quaternary ammonium bromodiiodide or quaternary ammonium triio› dide having the following structure were used in resist compositions. Of Quenchers 1 to 12, some were purchased from Tokyo Chemical Industry Co., Ltd. or Sigma-Aldrich and the remaining were prepared by neutralization reaction of an ammonium hydroxide with hydriodic acid. 

## EXAMPLE 

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