content_image/902957.jpg content_image/902945.jpg content_image/902946.jpg content_image/902947.jpg content_image/902948.jpg content_image/902955.jpg content_image/902949.jpg content_image/902950.jpg
<img src='content_image/902957.jpg'>

<img src='content_image/902945.jpg'>

<img src='content_image/902946.jpg'>

<img src='content_image/902947.jpg'>

<img src='content_image/902948.jpg'>

<img src='content_image/902955.jpg'>

<img src='content_image/902949.jpg'>

<img src='content_image/902950.jpg'>

(2) EUV Lithography test 

[0200] Each of the resist compositions in Tables 1 to 3 was spin coated on a silicon substrate having a 20-nm coating of silicon-containing spin-on hard mask SHB-A940 (Shin-Etsu Chemical Co., Ltd., silicon content 43 wt%) and prebaked on a hotplate at 105° C. for 60 seconds to form a resist film of 60 nm thick. Using an EUV scanner NXE3300 (ASML, NA 0.33, o0.9/0.6, quadrupole illumination), the resist film was exposed to EUV through a mask bearing a hole pattern at a pitch 46 nm (on-wafer size) and +20% bias. The resist film was baked (PEB) on a hotplate at the temperature shown in Tables 1 to 3 for 60 seconds and developed in a 2.38 wt % TMAH aqueous solution for 30 seconds to form a hole pattern having a size of 23 nm in Examples 1 to 21, Examples 23 to 33, and Comparative Examples 1 to 6 and 8 or a dot pattern having a size of 23 nm in Example 22 and Comparative Example 7. 

[0201] The resist pattern was evaluated using CD-SEM (CG-5000, Hitachi High-Technologies Corp.). The exposure dose that provides a hole or dot pattern having a size of 23 nm is reported as sensitivity. The size of 50 holes in that dose was measured, from which a size variation (3a) was com› puted and reported as CDU. 

[0202] The resist composition is shown in Tables 1 to 3 together with the sensitivity and CDU of EUV lithography. 

