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# c19) United States c12) Patent Application Publication 

# YAMAMOTO et al. 

# (54) PATTERN FORMING METHOD, METHOD FOR FORMING PATTERNED MASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE 

(71) Applicant: FUJIFILM Corporation, Tokyo (JP) 

(72) Inventors: Hisao YAMAMOTO, Shizuoka (JP); Shinichi SUGIYAMA, Shizuoka (JP) 

(73) Assignee: FUJIFILM Corporation, Tokyo (JP) 

(21) Appl. No.: 15/083,389 

(22) Filed: Mar. 29, 2016 

(63) Continuation of application No. PCT/JP2014/075681, filed on Sep. 26, 2014. 

## (30) Foreign Application Priority Data 

Sep. 30, 2013 (JP) ................................. 2013-205808 

## Related U.S. Application Data 

<img src='content_image/948617.jpg'>

(51) Int. Cl. 

(52) U.S. Cl. CPC .. G03F 7140 (2013.01); G03F 7116 (2013.01); G03F 7120 (2013.01); G03F 7132 (2013.01) 

## (57) ABSTRACT 

There is provided a pattern forming method which includes (I) a step of forming a first film by applying an active light› sensitive or radiation-sensitive resin composition which con› tains (A) a resin having a repeating unit having a group that is decomposed by the action of an acid and generates a polar group and (B) a compound that generates an acid by irradia› tion with active light or radiation to a substrate, (II) a step of exposing the first film, (III) a step of forming a line-and-space pattern by developing the exposed first film, and (IV) a step of coating the line-and-space pattern with a second film, in which the top width of the line pattern of the line-and-space pattern formed in Step (III) is larger than the bottom width thereof. 

US 20160209749Al 

# c10) Pub. No.: US 2016/0209749 Al 

# (43) Pub. Date: Jul. 21, 2016 

## Publication Classification 

<img src='content_image/948636.jpg'>

