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## Examples 1 to 37 & Comparative Examples 1 to 3 

## EB Writing Test 

Using a coater/developer system Clean Track Mark 5 (Tokyo Electron Ltd.), the positive resist composition was spin coated onto a silicon substrate ( diameter 6 inches, vapor primed with hexamethyldisilazane (HMDS)) and pre-baked on a hot plate at 110° C. for 60 seconds 45 to form a resist film of 70 nm thick. Using a system 50 HL-S00D (Hitachi Ltd.) at a HV voltage of 50 keV, the resist film was exposed imagewise to EB in a vacuum chamber. 

Using Clean Track Mark 5, immediately after the image- wise exposure, the resist film was baked (PEB) on a hot plate at the temperature shown in Tables 3 and 4 for 60 seconds and puddle developed in a 2.38 wt% tetramethylammonium hydroxide (TMAH) aqueous solution for 30 seconds to form a positive pattern. 

Resolution is a minimum size at the exposure dose (sensitivity) that provides a 1: 1 resolution of a 100-nm line-and-space pattern. The 100-nm line-and-space pattern was measured for line width roughness (LWR) under SEM. 

The resist composition is shown in Tables 3 and 4 along with the sensitivity and LWR of EB lithography. 

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