content_image/891487.jpg
ately after the exposure, the resist film was heated on a hot plate at 110° C. for 90 seconds. Thereafter, the resist film was developed with a 2.38 mass % aqueous tetramethylammo- nium hydroxide solution at 23 ° C. for 60 seconds, rinsed with 

pure water for 30 seconds and dried. The thus obtained line and space patterns were evaluated in the same manner as in Example E ( electron beam negative exposure). The evaluation results are given in Table 6. 

## TABLE6 

<img src='content_image/891487.jpg'>

*based on the total solid content of the resist composition 

