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It is apparent from the results of Table 4 that the photosen› sitive composition of the present invention exhibits excellent performance as a negative resist composition employed in KrF excimer laser exposure. 

## Examples 1E to 1 SE and Comparative Examples 1E and2E 

<Preparation of Resist> 

Referring to Table 5 below, with respect to each of the resists, the individual components were dissolved in the sol› vent and passed through a polytetrafluoroethylene filter of0.1 µm pore size, thereby obtaining a positive resist solution of 12 mass % solid content. 

<Evaluation of Resist> 

Each of the obtained positive resist solutions was uni› formly applied onto a silicon substrate having undergone a hexamethyldisilazane treatment by use of a spin coater, and heated and dried on a hot plate at 120° C. for 60 seconds, thereby obtaining a 0.3 µm resist film. 

The obtained resist film was exposed by use of an electron beams projection lithography equipment manufactured by Nikon Corporation ( accelerating voltage 100 ke V). Immedi› ately after the exposure, the resist film was heated on a hot plate at 110° C. for 90 seconds. Thereafter, the resist film was developed with a 2.38 mass % aqueous tetramethylammo› nium hydroxide solution at 23 ° C. for 60 seconds, rinsed with pure water for 30 seconds and dried. The thus obtained line and space patterns were evaluated in the same manner as in 

Surface exposure was carried out while changing the expo› sure intensity by 0.1 µC/cm $^{2 }$at a time within the range of Oto 

## Sensitivity, Resolving Power (y) 

## ExampleE 

## Example A 

10 µC/cm 2 , and the exposed film was baked at 110° C. for 90 seconds. Thereafter, using a 2.38 mass % aqueous tetram› ethylammonium hydroxide (TMAH) solution, the dissolu› tion rate at each of the exposure intensities was measured, thereby obtaining a sensitivity curve. 

The sensitivity was defined as the exposure intensity at which the dissolution rate of the resist was saturated on the sensitivity curve. Dissolution contrast (y value) was calcu- lated from the gradient of the straight line portion of the sensitivity curve. The larger they value, the greater the excel› lence in dissolution contrast. 

[Line Edge Roughness] 

At arbitrary 30 points in a 50 µm region in the longitudinal direction of a 150 nm line pattern at the exposure intensity realizing the above sensitivity, the distance from a reference line on which edges were to be present was measured by means of a scanning electron microscope (model S-9220, manufactured by Hitachi, Ltd.). The standard deviation of measurements was determined, and 3a was computed. 

[Outgas Performance: Ratio of Change in Film Thickness by Exposure] 

Exposure was carried out at the exposure intensity equal to 2.0 times the exposure intensity (µC/cm 2 ) at the sensitivity determined by performing a surface exposure by electron beams. The film thickness after the exposure (before post› bake) was measured, and the ratio of change from the film thickness before the exposure was calculated by the following formula. 

Ratio of change in film thickness (%)~[(film thickness before exposure-film thickness after exposure)/ (film thickness before exposure)]xl00 

The evaluation results are given in Table 5. 

## TABLES 

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