8. The resist composition of claim 1, further comprising an organic solvent. 

9. The resist composition of claim 1, further comprising a quencher. 

10. The resist composition of claim 1, further comprising a surfactant. 

11. A pattern forming process comprising the steps of applying the positive resist to composition of claim 1 to form a resist film on a substrate, exposing the resist film to high-energy radiation, and developing the exposed resist film in a developer. 

12. The process of claim 11 wherein the high-energy radiation is i-line, KrF excimer laser, ArF excimer laser, EB or EUV of wavelength 3 to 15 nm. 

* * * * * 

