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## Examples 1 to 28 and Comparative Examples 1 to 4 

(1) Preparation of Coating Solution of Actinic Ray-Sensitive or Radiation-Sensitive Resin Composition, and Coating 

The coating solution composition according to the for› mulation shown in the Table below was microfiltered through a membrane filter having a pore size of 0.1 µm to obtain an actinic ray-sensitive or radiation-sensitive resin composition (resist composition) solution. 

This actinic ray-sensitive or radiation-sensitive resin com› position solution was coated on a 6-inch Si wafer previously subjected to a hexamethyldisilazane (HMDS) treatment, by using a spin coater, Mark 8, manufactured by Tokyo Elec› tron Ltd. and dried on a hot plate at 100° C. for 60 seconds to obtain a resist film having a thickness of 50 nm. 

## Electron Beam (EB) Exposure 

-continued 

(PA-16) 

(PA-17) 

(PA-18) 

(2) EB Exposure and Development 

The resist film-coated wafer obtained in (1) above was patternwise irradiated by using an electron beam lithography apparatus (HL 7 50, manufactured by Hitachi, Ltd., acceler- ating voltage: 50 keV). At this time, the lithography was performed to form a 1:1 line-and-space pattern. After the electron beam lithography, the wafer was heated on a hot plate at 110° C. for 60 seconds, then developed for 30 seconds by puddling the organic developer shown in the Table below, rinsed by using the rinsing solution shown in the Table below, rotated at a rotational speed of 4,000 rpm for 30 seconds and heated at 90° C. for 60 seconds to obtain a resist pattern composed of a 1:1 line-and-space pattern having a line width of 50 nm. 

## Comparative Examples 5 and 6 (Electron Beam (EB) Exposure) 

Preparation of an actinic ray-sensitive or radiation-sensi› tive resin composition and pattern formation were per› formed in the same manner as in Example 1 except for changing the formulation as shown in the Table below, performing the development with an aqueous alkali solution (TMAH, an aqueous 2.38 mass % tetramethylannnonium hydroxide solution) in pace of the organic developer, and using water as the rinsing solution. 

(3) Evaluation of Resist Pattern 

The obtained resist pattern was evaluated for sensitivity, resolution and LWR by means of a scanning electron micro› scope (S-9220, manufacture by Hitachi Ltd.) by the follow› ing methods. The results obtained are shown in the Tables below. 

(3-1) Sensitivity 

The irradiation energy below which the 1:1 line-and› space pattern having a line width of 50 nm cannot be resolved was taken as the sensitivity (Eop). A smaller value indicates higher performance. 

(3-2) Resolution 

The minimum line width below which the line-and-space (1: 1) pattern at the Eop above cannot be separated was taken as the resolution. A smaller value indicates higher perfor- mance. 

(3-3) Line Width Roughness (LWR) 

With respect to the line width roughness, at arbitrary 50 points in the longitudinal 0.5 µm region of the line-and› space space pattern having a line width of 50 nm (in Comparative Examples 5 and 6, the 1: 1 line-and-space pattern having a line width of 100 nm), the line width at the Eop above was measured and after determining the standard deviation thereof, 3a was computed. A smaller value indi› cates higher performance. 

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