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As shown in Table 3, the compositions of the present inven- tion according to Examples 1 to 8 were superior in the IL resolution, the IL pattern shape, and the LER, compared to the compositions according to Comparative Examples 1 to 5. 

## Examples 9 to 30 and Comparative Examples 6 to 9 

Positive resist solutions were prepared, resist films were formed, and resist evaluation was performed in the same manner as in Examples 1 to 8, except that (1) the silicon 

substrate treated with hexamethyl disilazane was changed to a glass substrate on which a chromium oxide film (light shielding film) having a thickness of 100 nm was provided by chemical vapor-deposition, (2) the baking conditions after the resist solution coating were changed from 130° C. and 90 seconds to 130° C. and 600 seconds, and (3) the baking conditions after the electron beam irradiation were changed from 120° C. and 90 seconds to 120° C. and 600 seconds, so as to confirm the performance of the resist film in mask blanks. The results are shown in Table 4. 

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