content_image/903219.jpg content_image/903214.jpg content_image/903215.jpg content_image/903216.jpg content_image/903218.jpg
step (3) of forming a negative pattern by development of the film with a developer containing an organic solvent after the exposing of the film, 

wherein a content of the compound (B) is 31 % by mass to 60% by mass on the basis of all solids content of the composition. 

15. The pattern-forming method according to claim 14, 

wherein the resin (A) further has a repeating unit having a polar group. 

16. The pattern-forming method according to claim 15, 

wherein the polar group is selected from the group consist› ing of a hydroxyl group, a cyano group, a lactone group, a carboxylic acid group, a sulfonic acid group, an amido group, a sulfonamido group, an ammonium group, a sulfonium group and a group obtained by combining two or more of the above groups. 

17. The pattern-forming method according to claim 14, 

wherein the resin (A) further has a repeating unit having an acid group. 

18. The pattern-forming method according to claim 17, 

wherein the acid group is a phenolic hydroxyl group, a carboxylic acid group, a sulfonic acid group, a fluori› nated alcohol group, a sulfonamido group, a sulfo- ny limido group, an ( alky lsulfony I)( alky lcarbony I )meth› ylene group, an (alkylsulfonyl)(alkylcarbonyl)imido group, a bis(alkylcarbonyl)methylene group, a bis(alky› lcarbonyl)imido group, a bis(alkylsulfonyl)methylene group, a bis(alkylsulfonyl)imido group, a tris-(alkylcar› bonyl)methylene group or a tris(alkylsulfonyl)methyl› ene group. 

19. The pattern-forming method according to claim 14, 

wherein a content of a repeating unit represented by the following formula (I) to all repeating units in the resin (A) is 4 mo! % or less: 

<img src='content_image/903219.jpg'>

X$_{4 }$ represents a single bond, --COO- or ----CONR$_{64}$-, and R$_{64 }$represents a hydrogen atom or an alkyl group; 

L$_{4 }$ represents a single bond or an alkylene group; 

Ar$_{4 }$ represents an (n+l)-valent aromatic ring group, and when Ar$_{4 }$ forms a ring together with R$_{42}$ , Ar $_{4 }$represents an (n+2)-valent aromatic ring group; and 

n represents an integer of 1 to 4. 

20. The pattern-forming method according to claim 14, which is a method for forming a semiconductor fine circuit. 

21. An electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, which is used for the pattern-forming method according to claim 14. 

22. A resist film, which is formed with the electron beam- sensitive or extreme ultraviolet radiation-sensitive resin com› position according to claim 21. 

23. A manufacturing method of an electronic device, com› prising: 

the pattern-forming method according to claim 14. 

24. An electronic device, which is manufactured by the manufacturing method of an electronic device according to claim 23. 

25. The pattern-forming method according to claim 14, further comprising, between steps (2) and (3 ), a step ofbaking the exposed film. 

26. The pattern-forming method according to claim 14, wherein the compound (B) is a compound selected from the following formulae (ZI) to (ZIII): 

<img src='content_image/903214.jpg'>

<img src='content_image/903215.jpg'>

<img src='content_image/903216.jpg'>

wherein, in formula (ZI) each ofR$_{201}$, R$_{202 }$and R$_{203 }$inde› pendently represents an organic group, in formulae (ZII) and (ZIII) each ofR$_{204 }$to R$_{207 }$independently represents an aryl group, an alkyl group or a cycloalkyl group, z› represents a non-nucleophilic group, and two of R$_{201}$, R$_{202 }$and R$_{203 }$are not bonded to form a cyclic structure. 

27. A pattern-forming method, comprising in this order: 

step (1) of forming a film with an electron beam-sensitive or extreme ultraviolet radiation-sensitive resin compo› sition that contains (A) a resin having an acid-decom› posable repeating unit and capable of decreasing a solu› bility of the resin (A) in a developer containing an organic solvent by an action of an acid, (B) a compound capable of generating an acid upon irradiation with an electron beam or extreme ultraviolet radiation and (C) a solvent; 

step (2) of exposing the film with an electron beam or extreme ultraviolet radiation; and 

step (3) of forming a negative pattern by development of the film with a developer containing an organic solvent after the exposing of the film, 

wherein a content of the compound (B) is 21 % by mass to 70% by mass on the basis of all solids content of the composition, and 

wherein resin (A) contains a repeating group represented by formula (I): 

<img src='content_image/903218.jpg'>

