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The concentration of each component shows the concentration(% by mass) in concentration of the entire solid content. 

[0556] From the results shown in the above Tables, it is clearly seen that the actinic ray-sensitive or radiation-sensi› tive resin compositions in Examples 1 to 17 and 29 to 47 realize, at the same time, high sensitivity, high resolution, a good pattern profile, inhibition of pattern collapse, good line edge roughness, and good outgas performance in EB expo› sure and alkali development, as compared with Comparative Examples 1 to 5 not containing repeating unit (A). Further, the actinic ray-sensitive or radiation-sensitive resin composi› tions in which the number of atoms for constituting the main structure of the alkylene group, alkenylene group, divalent aliphatic hydrocarbon cyclic group, divalent aromatic cyclic group, or a group formed by combining two or more of these groups represented by L$_{1 }$ in formula (I) is 2 to 7 can realize further good line edge roughness. 

[0557] Also, it is clearly seen that the actinic ray-sensitive or radiation-sensitive resin compositions in Examples 18 to 28 and 48 to 60 realize, at the same time, high sensitivity, high resolution, a good pattern profile, inhibition of pattern col› lapse, good line edge roughness, and good outgas perfor› mance in EUV exposure and alkali development, as com› pared with Comparative Examples 6 to 8 not containing repeating unit (A). 

[0558] Also, it is clearly seen that the actinic ray-sensitive or radiation-sensitive resin compositions in Examples 61 to 7 6 realize, at the same time, high sensitivity, high resolution, a good pattern profile, inhibition of pattern collapse, good line edge roughness, and good outgas performance even in EB exposure and organic solvent development, as compared with Comparative Examples 9 to 13 not containing repeating unit (A). 

[0559] Also, it is clearly seen that the actinic ray-sensitive or radiation-sensitive resin compositions in Examples 77 to 

90 realize, at the same time, high sensitivity, high resolution, a good pattern profile, inhibition of pattern collapse, good line edge roughness, and good outgas performance even in EUV exposure and organic solvent development, as compared with Comparative Examples 14 to 18 not containing repeating unit (A). 

[0560] According to the invention, it is possible to provide an actinic ray-sensitive or radiation-sensitive resin composi› tion capable of satisfying high sensitivity, high resolution, good pattern profile, and good line edge roughness on a high level at the same time, controlled in pattern collapse in a rinsing process, and having sufficiently satisfactory outgas properties at the time of exposure. According to the invention, it is also possible to provide a resist film using the same compos1t10n, a pattern forming method, a manufacturing method of a semiconductor device, and a semiconductor device. 

[0561] This application is based on a Japanese patent appli› cation filed on May 31, 2012 (Japanese Patent Application No. 2012-124854) and Japanese patent application filed on Apr. 30, 2013 (Japanese Patent Application No. 2013-96041 ), and the contents thereof are incorporated herein by reference. 

1. An actinic ray-sensitive or radiation-sensitive resin com› position comprising: 

(P) a resin having a repeating unit (A) represented by the following formula (I) capable of generating an acid on the side chain of the resin upon irradiation with an actinic ray or radiation: 

## INDUSTRIAL APPLICABILITY 

