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ArF Immersion Lithography Patterning Test 

Examples 1-1 to 1-12 and Comparative Examples 1-1 to 1-4 

On a substrate (silicon wafer), a spin-on carbon film ODL-102 (Shin-Etsu Chemical Co., Ltd., carbon content 80 wt % ) was deposited to a thickness of 200 nm and a silicon-containing spin-on hard mask SHB-A940 (Shin-Etsu Chemical Co., Ltd., silicon content 43 wt%) was deposited thereon to a thickness of 35 nm. On this substrate for trilayer process, each of the resist compositions in Table 1 was spin coated, then baked on a hot plate at 100° C. for 60 seconds to form a resist film of 80 nm thick. 

Using an ArF excimer laser scanner NSR-S610C (Nikon Corp., NA 1.30, a 0.98/0.78, 35° cross-pole illumination, azimuthally polarized illumination), the resist film was exposed through a 6% halftone phase shift mask bearing a pattern having a line of 50 inn and a pitch of 100 nm (on-wafer size). The resist film was baked (PEB) at the temperature shown in Table 1 for 60 seconds. Thereafter, the resist film was developed inn-butyl acetate for 30 seconds in Examples 1-1 to 1-11 and Comparative Examples 1-1 to 1-3 or in 2.38 wt % tetramethylammonium hydroxide (TMAH) aqueous solution in Example 1-12 and Compara- tive Example 1-4, yielding a negative line-and-space (LIS) pattern having a space of 50 nm and a pitch of 100 nm. 

The pattern was observed under a CD-SEM (CG-4000, Hitachi High-Technologies Corp.). The exposure dose capable of resolving a LIS pattern at 1: 1 was determined as sensitivity, and edge roughness (LWR) was measured. The results are shown in Table 1. 

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