developer on the substrate surface (spraying method), and a method of continuously ejecting the developer on the sub› strate spinning at a constant speed while scanning the devel› oper ejecting nozzle at a constant rate (dynamic dispense method) may be applied. 

Also, after the developing step, a step of stopping the development while replacing the developer with another sol› vent may be practiced. 

The developing time is preferably a time long enough to sufficiently dissolve the resin, crosslinking agent and the like in the unexposed area and, usually, the developing time is preferably from 10 to 300 seconds, more preferably from 20 to 120 seconds. 

The temperature of the developer is preferably from 0 to 50° C., more preferably from 15 to 35° C. 

The amount of the developer can be appropriately adjusted according to the developing method. 

(5) Rinsing 

The pattern forming method of the present invention may contain (5) a step of rinsing the film by using a rinsing solu› tion containing an organic solvent after the developing step 

(4). 

Rinsing Solution: 

The organic solvent used for the rinsing solution is an organic solvent having a vapor pressure at 20° C. of prefer› ably from 0.05 to 5 kPa, more preferably from 0.1 to 5 kPa, and most preferably from 0.12 to 3 kPa. By setting the vapor pressure of the organic solvent used for the rinsing solution to from 0.05 to 5 kPa, the temperature uniformity in the wafer plane is enhanced and swelling ascribable to permeation of the rinsing solution is suppressed, as a result, the dimensional uniformity in the wafer plane is improved. 

As for the rinsing solution, various organic solvents may be used but, for example, in the case where a resin containing a repeating unit represented by formula (1) is used as the resin (A), a rinsing solution containing at least one kind ofa solvent selected from a hydrocarbon-based solvent, a ketone-based solvent, an ester-based solvent, an alcohol-based solvent, an amide-based solvent and an ether-based solvent, or water is preferably used. 

More preferably, a step of washing the film by using a rinsing solution containing at least one kind of an organic solvent selected from a ketone-based solvent, an ester-based solvent, an alcohol-based solvent, an amide-based solvent 45 and a hydrocarbon-based solvent is preformed after develop› ment. Still more preferably, a step of washing the film by using a rinsing solution containing at least one or more kinds of organic solvents selected from the group consisting of an alcohol-based solvent and a hydrocarbon-based solvent is 50 preformed after development. 

Specific examples of the ketone-based solvent, ester-based solvent, alcohol-based solvent, amide-based solvent, ether› based solvent and hydrocarbon-based solvent used as the rinsing solution are the same as those described above for the developer. 

In particular, use of a rinsing solution containing at least one or more kinds of organic solvents selected from the group consisting of a monohydric alcohol-based solvent and a hydrocarbon-based solvent is preferred. 

The monohydric alcohol-based solvent used in the rinsing step after development includes a linear, branched or cyclic monohydric alcohol, and specific examples of the monohy› dric alcohol which can be used include 1-butanol, 2-butanol, 3-methyl-1-butanol, tert-butyl alcohol isopropyl alcohol, 65 cyclopentanol and cyclohexanol, with 1-butanol, 2-butanol, 3-methyl-1-butanol and isopropyl alcohol being preferred. 

The hydrocarbon-based solvent includes an aromatic hydrocarbon-based solvent such as toluene and xylene, and an aliphatic hydrocarbon-based solvent such as octane, decane and dodecane. 

As for these components, a plurality of kinds may be mixed, or the component may be mixed with an organic solvent other than those described above. 

The above-described organic solvent may be mixed with water, but the percentage of water content in the rinsing solution is usually 30 mass% or less, preferably 10 mass% or less, more preferably 5 mass % or less, still more preferably 3 mass% or less. The rinsing solution most preferably contains no water. By virtue of setting the percentage of water content to 30 mass% or less, good development characteristics can be obtained. 

The rinsing solution may also be used after adding thereto an appropriate amount of a surfactant. 

As for the surfactant, the same as the later-described sur› factant used in the resist composition may be used, and the amount used thereof is usually from 0.001 to 5 mass %, preferably from 0.005 to 2 mass %, more preferably from 0.01 to 0.5 mass%, based on the entire amount of the rinsing solution. 

Rinsing Method: 

In the rinsing step, the developed wafer is wished using the above-described rinsing solution containing an organic sol› vent. 

The method of washing treatment is not particularly lim- ited but, for example, a method of continuously ejecting the rinsing solution on the substrate spinning at a constant speed (spin coating method), a method of dipping the substrate in a bath filled with the rinsing solution for a fixed time ( dipping method), and a method of spraying the rinsing solution on the substrate surface (spraying method) may be applied. Above all, a method where the washing treatment is performed by the spin coating method and after the washing, the rinsing solution is removed from the substrate surface by spinning the substrate at a rotation speed of 2,000 to 4,000 rpm, is pre- ferred. The spinning time of the substrate may be set accord› ing to the rotation speed in the range achieving removal of the rinsing solution from the substrate surface but is usually from 10 seconds to 3 minutes. Incidentally, the rinsing is preferably performed under room-temperature conditions. 

The rinsing time is preferably long enough to allow for no remaining of the developing solvent on the wafer and is usually from 10 to 300 seconds, more preferably from 20 to 120 seconds. 

The temperature of the rinsing solution is preferably from 0 to 50° C., more preferably from 15 to 35° C. 

The amount of the rinsing solution can be appropriately adjusted according to the rinsing method. 

Also, after the development or rinsing, a treatment of removing the developer or rinsing solution adhering on the pattern with a supercritical fluid may be performed. 

Furthermore, after the development, rinsing or treatment with a supercritical fluid, a heating treatment for removing the solvent remaining in the pattern may be performed. The heat› ing temperature and heating time are not particularly limited as long as a good resist pattern can be obtained, but they are usually from 40 to 160° C. and from 10 seconds to 3 minutes. The heating treatment may be performed a plurality of times. [Negative Chemical-Amplification Resist Composition] 

The negative chemical-amplification resist composition capable of undergoing negative conversion by a crosslinking reaction, which is used in the pattern forming method of the present invention, is described below. 

