content_image/884874.jpg
[NH4]4[NbiO2MC 3 H 4 O 3 ) 4 O] wherein C 3 H 4 O 3 is lactate (C3H4O3 -2), 

[NH4h[Ta(O 2 MC 2 O 4 )] wherein C 2 O 4 1s oxalate (C2O4-2), 2 

[NH4]2[Ti(O 2 MC 2 O 4 )] wherein C 2 O 4 is oxalate (C 2 O 4 - ), and 

combinations thereof. 

5. A method, comprising: 

i) providing a photoresist composition comprising: water; about 0.1 wt% to about 30 wt% hydrogen peroxide, and about 1 wt % to about 30 wt % of a peroxo complex having a structure according to formula (1): 

<img src='content_image/884874.jpg'>

wherein 

w is 1 or 2, 

x is an integer of 1 to 4, 

y is an integer of 1 to 4, 

u is O or 1, 

M’w(O 2 ML’)yOu has a charge ofO to -3, C’ is animonium (NH +), 

4 

k is an integer of0 to 3, 

M’ is a metal ion selected from the group consisting of tantalum (V), niobium (V), titanium (IV), and com- binations thereof, 

L’ is an oxidatively stable organic carboxylate ligand, and 

wt% is based on total weight of the photoresist com- position; 

ii) disposing the photoresist composition on a surface of a substrate and removing the solvent, thereby forming a photoresist layer disposed on the substrate; 

iii) imagewise exposing the photoresist layer to radiation selected from the group consisting of e-beam, x-ray, and ultraviolet (UV) radiation, thereby producing an exposed photoresist layer comprising i) exposed photo› resist consisting essentially of exposed peroxo complex and ii) non-exposed photoresist consisting essentially of non-exposed peroxo complex; and 

iv) removing the non-exposed photoresist by developing the exposed photoresist layer with water and/or aqueous base, thereby forming a layered structure comprising a patterned photoresist layer disposed on the substrate, the patterned photoresist layer comprising topographical features comprising the exposed photoresist. 

6. The method of claim 5, wherein the photoresist layer is exposed imagewise using an ultraviolet radiation source at a wavelength that is in the range of 400 nm to 10 nm. 

7. The method of claim 5, wherein the photoresist layer is exposed imagewise using an ultraviolet radiation source at a wavelength of 13.5 nm. 

8. The method of claim 5, wherein the method further comprises baking the disposed photoresist layer before said exposing. 

9. The method of claim 5, wherein the method further comprises baking the disposed photoresist layer before said developing. 

10. The method of claim 5, wherein the method further comprises transferring the pattern of features of the patterned photoresist layer to the substrate. 

11. The method of claim 10, wherein the method further comprises baking the patterned photoresist layer before trans› ferring features of the patterned photoresist layer to the sub› strate. 

12. A photoresist composition, comprising: 

a halide or alkoxide salt of a metal ion selected from the group consisting of titanium (IV), Niobium (V) and Tantalum (V); 

an oxidatively stable organic carboxylic acid in an amount of0.5 to 3.0 molar equivalents relative to moles of the metal ion; 

hydrogen peroxide in an amount of 1.0 to 10.0 molar equivalents relative to moles of the metal ion• ammonium hydroxide; and ’ water; 

wherein 

the photoresist composition is suitable for forming a pho› toresist layer comprising a peroxo complex of the metal ion in a process fore-beam lithography, x-ray lithogra› phy, and/or lithography utilizing an ultraviolet radiation source having a wavelength that is in the range of 400 nm to 10 nm, wherein the process includes imagewise exposing the photoresist layer to form an exposed pho› toresist layer comprising i) exposed photoresist consist› ing essentially of exposed peroxo complex and ii) non› exposed photoresist consisting essentially of non› exposed peroxo complex, and removing the non› exposed photoresist using water or aqueous base developer to form a patterned photoresist layer compris› ing the exposed photoresist. 

13. The photoresist composition of claim 12, wherein the organic carboxylic acid is present in an amount of0.75 to 1.5 molar equivalents relative to moles of the metal ion. 

14. The photoresist composition of claim 12, wherein the organic carboxylic acid is present in an amount of0.9 to 1.1 molar equivalents relative to moles of the metal ion. 

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