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(51) Int. Cl. 

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## (56) References Cited 

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## U.S. PATENT DOCUMENTS 

## FOREIGN PATENT DOCUMENTS 

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Wang, et al. New Anionic Photoacid Generator Bound Polymer Resists for EUV Lithography, Oct. 18, 2007, ACS Macromolecules 2007, 40, 8220-8224.* 

Lee et al. "Photosensitivity and line-edge roughness of novel poly› mer-bound PAG photoresist" Feb. 25, 2007. Proc. of Spie. vol. 6519, p. 65191E-l.* 

Machine translation JP 10-221852. Aug. 21, 1998.* 

Wang, Mingxing et al., "Synthesis and Properties of New Anionic Photoacid Generators Bound Polymer Resists for e-beam and EUV lithography", Proc. of SPIE vol. 6923, 692312, 2008, 7 pages. Written Opinion (PCT/ISA/237) dated Oct. 6, 2009, in PCT/JP2009/ 065286. 

International Search Report (PCT/ISA/210) dated Oct. 6, 2009, in PCT/JP2009/065286. 

Extended European Search Report dated Oct. 12, 2012 in European Application No. 09811498.6. 

Wang, Mingxing et al, "Novel Anionic Photoacid Generator (PAGs) and Photoresist for sub-50 nm Patterning by EUVL and EBL", Proc. ofSPIE, vol. 6519, Jan. 1, 2007, pp. 65191F-l to 65191F-6. 

Office Action dated Feb. 5, 2013 in Japanese Application No. 2009- 145677. 

Office Action dated Sep. 3, 2013, issued by the Japanese Patent Office in corresponding JP Application No. 2009-145677. 

Office Action dated Apr. 22, 2014, issued by the Japanese Patent Office in counterpart Japanese Application No. 2009-145677. 

Office Action dated Nov. 11, 2014 issued by the Japanese Patent Office in counterpart Japanese Patent Application No. 2009-145677. 

* cited by examiner 

## OTHER PUBLICATIONS 

