content_image/905271.jpg content_image/905270.jpg content_image/905267.jpg
selectively exposing the resist layer; and developing the exposed resist layer: 

wherein R$_{1 }$is a C$_{1 }$-C$_{5 }$ alkoxy group, R$_{2 }$ and R$_{3 }$ are respec› tively a linear or branched C$_{1 }$-C$_{20 }$alkyl group, an aryl group, a linear or branched C$_{1 }$-C$_{20 }$perfluoroalkyl group, a benzyl group, or a CcC$_{20 }$ aryl group, and A- is a compound represented as 

<img src='content_image/905271.jpg'>

<img src='content_image/905270.jpg'>

[Chemical formula 1] 

[Chemical formula 2] 

wherein X$_{1 }$ is a monocyclic or polycyclic C$_{3}$ -C$_{20 }$hydro› carbon group, a benzyl group, a CcC$_{20 }$ aryl group, a cl -ClO alkyl group, a cl -ClO alkoxy group, a cl -ClO hydroxy alkyl group, or a cyano group, at least one hydrogen atom of the monocyclic or polycyclic C$_{3}$ -C$_{20 }$ hydrocarbon group is or is not substituted with an ether group, an ester group, a carbonyl group, an acetal group, a nitrile group, a cyano group, a hydroxy group, a car› boxyl group, or an aldehyde group, R is a C$_{1 }$-C$_{10 }$alkyl group, a C$_{1 }$-C$_{10 }$alkoxy group, a nitrogen atom, a sulfur atom, or an oxygen atom, and m is a positive integer of 0 to 2. 

11. The method of claim 10, wherein a light source for the exposing is any light source selected from a KrF excimer laser, an ArF excimer laser, an Extreme Ultra Violet (EUV) light, an X-ray, and an electron-beam (e-beam). 

12. The method of claim 10, wherein a light wavelength of the light source for the exposing is about 180 nm to 250 nm. 

13. The copolymer of claim 12, wherein the copolymer has a weight average molecular weight (Mw) of about 500 to 100,000. 

14. The copolymer of claim 3, wherein the copolymer for a chemically amplified resist is represented as any copolymer of Chemical formulas below, which are 

<img src='content_image/905267.jpg'>

