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# c19) United States c12) Patent Application Publication 

# Hatakeyama et al. 

# (54) POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 

(71) Applicant: Shin-Etsu Chemical Co., Ltd., Tokyo (JP) 

(72) Inventors: Jun Hatakeyama, Joetsu-shi (JP); Masaki Ohashi, Joetsu-shi (JP) 

(73) Assignee: Shin-Etsu Chemical Co., Ltd., Tokyo (JP) 

(21) Appl. No.: 16/717,022 

(22) Filed: Dec. 17, 2019 

## (30) Foreign Application Priority Data 

Dec. 27, 2018 (JP) ................................. 2018-244436 

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(51) Int. Cl. 

(52) U.S. Cl. CPC .......... G03F 710392 (2013.01); G03F 710045 (2013.01); G03F 710048 (2013.01); C07C 381/12 (2013.01); C08L 25106 (2013.01); C08L 33/08 (2013.01); C08L 33/14 (2013.01); G03F 712002 (2013.01) 

## (57) ABSTRACT 

A positive resist composition comprising a base polymer comprising recurring units containing an optionally substi› tuted amino group and iodine exhibits a high sensitivity, high resolution, low edge roughness (LER, LWR) and small size variation, and forms a pattern of good profile after exposure and development. 

US 20200209747Al 

# c10) Pub. No.: US 2020/0209747 Al 

# (43) Pub. Date: Jul. 2, 2020 

## Publication Classification 

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