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## Unijunction Transistors (UJT) 

The behavior of semiconductor materials is exploited through the construction of numerous transistor devices containing various configurations of N-type and P-type materials. The physical arrangement of the materials in relation to each other yields devices with unique behaviors and applications. The transistors described above having two junctions of P-type and N-type materials (PN) are known as bipolar junction transistors. Other more simple transistors can be fashioned with only one junction of the PN semiconductor materials. These are known as unijunction transistors (UJT). [ Figure 11-34] 

The UJT contains one base semiconductor material and a different type of emitter semiconductor material. There is no 

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collector material. One electrode is attached to the emitter and two electrodes are attached to the base material at opposite ends. These are known as base 1 (B1) and base 2 (B2). The electrode configuration makes the UJT appear physically the same as a bipolar junction transistor. However, there is only one PN junction in the UJT and it behaves differently. 

The base material of a UJT behaves like a resistor between the electrodes. With B2 positive with respect to B1, voltage gradually drops as it flows through the base. [Figure 11-35] By placing the emitter at a precise location along the base material gradient, the amount of voltage needed to be applied to the emitter electrode to forward bias the UJT base-emitter junction is determined. When the applied emitter voltage exceeds the voltage at the gradient point where the emitter is attached, the junction is forward biased and current flows freely from the B1 electrode to the E electrode. Otherwise, the junction is reversed biased and no significant current flows although there is some leakage. By selecting a UJT with the correct bias level for a particular circuit, the applied emitter voltage can control current flow through the device. 

UJTs of a wide variety of designs and characteristics exist. A description of all of them is beyond the scope of this discussion. In general, UJTs have some advantages over bipolar transistors. They are stable in a wide range of temperatures. In some circuits, use of UJTs can reduce the overall number of components used, which saves money and potentially increases reliability. They can be found in switching circuits, oscillators, and wave shaping circuits. However, four-layered semiconductor thyristors that function the same as the UJT just described are less expensive and most often used. 

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