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## EUV Lithography Test 

## Examples 2-1 to 2-12 and Comparative Example 2-1 

The resist composition in Table 3 was spin coated on a silicon substrate having a 20 nm coating of silicon-contain› ing spin-on hard mask SHB-A940 (Shin-Etsu Chemical Co., Ltd., silicon content 43 wt % ) and pre baked on a hotplate at 105° C. for 60 seconds to form a resist film of 60 nm thick. Using an EUV scanner NXE3300 (ASML, NA 0.33, a0.9/ 0.6, quadrupole illumination), the resist film was exposed to EUV through a mask bearing a hole pattern at a pitch 46 nm 

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(on-wafer size) and +20% bias. The resist film to was baked (PEB) on a hotplate at the temperature shown in Table 3 for 60 seconds and developed in a 2.38 wt % TMAH aqueous solution for 30 seconds to form a hole pattern having a size of 23 nm. 

The resist pattern was evaluated using CD-SEM (CG- 5000, Hitachi High-Technologies Corp.). The exposure dose that provides a hole pattern having a size of 23 nm is reported as sensitivity. The size of 50 holes was measured, from which a size variation (3a) was computed and reported as CDU. 

The resist composition is shown in Table 3 together with the sensitivity and CDU of EUV lithography. 

