content_image/914062.jpg content_image/914063.jpg content_image/914064.jpg content_image/914065.jpg content_image/914066.jpg content_image/914067.jpg content_image/914061.jpg content_image/914070.jpg content_image/914069.jpg content_image/914068.jpg
Comparative Quenchers 1 to 7 of the Following Structural Formulae 

[0176] 

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Comparative Quencher 1 

Comparative Quencher 2 

Comparative Quencher 3 

Comparative Quencher 4 

Comparative Quencher 5 

Comparative Quencher 6 

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Blend Quenchers 1 to 3 of the Following Structural Formulae 

[0177] 

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## (2) EUV Lithography Test 

[0178] Each of the resist compositions in Tables 1 to 4 was spin coated on a silicon substrate having a 20-nm coating of silicon-containing spin-on hard mask SHB-A940 (Shin-Etsu Chemical Co., Ltd., silicon content 43 wt%) and prebaked on a hotplate at 105° C. for 60 seconds to form a resist film of 60 nm thick. Using an EUV scanner NXE3300 (ASML, NA 0.33, a 0.9/0.6, quadrupole illumination), the resist film was exposed to EUV through a mask bearing a hole pattern at a pitch 46 nm (on-wafer size) and +20% bias. The resist film was baked (PEB) on a hotplate at the temperature shown in Tables 1 to 4 for 60 seconds and developed in a 2.38 wt % TMAH aqueous solution for 30 seconds to form 

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Comparative Quencher 7 

Blend Quencher 1 

Blend Quencher 2 

Blend Quencher 3 

