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# c12) United States Patent 

# Hatakeyama et al. 

# (54) RESIST COMPOSITION AND PATTERNING PROCESS 

(71) Applicant: SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP) 

(72) Inventors: Jun Hatakeyama, Joetsu (JP); Masaki Ohashi, Joetsu (JP) 

(73) Assignee: SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP) 

( * ) Notice: Subject to any disclaimer, the term ofthis patent is extended or adjusted under 35 U.S.C. 154(b) by 41 days. 

(21) Appl. No.: 15/296,662 

(22) Filed: Oct. 18, 2016 

## (65) Prior Publication Data 

US 2017/0108775 Al Apr. 20, 2017 

## (30) Foreign Application Priority Data 

Oct. 19, 2015 (JP) ................................. 2015-205402 

(51) Int. Cl. 

<img src='content_image/911187.jpg'>

(52) U.S. Cl. CPC .......... G03F 710045 (2013.01); C07C 303132 (2013.01); C07C 309/10 (2013.01); C07C 309112 (2013.01); C07C 309/13 (2013.01); C07C 309/19 (2013.01); C08F 220124 (2013.01); C08F 228102 (2013.01); C08F 228106 (2013.01); G03F 710392 (2013.01); G03F 710395 (2013.01); G03F 710397 (2013.01); G03F 712006 (2013.01); G03F 712037 (2013.01); G03F 712041 (2013.01); G03F 712059 (2013.01); C08F 2220/282 (2013.01); C08F 2220/301 (2013.01); C08F 2220/382 (2013.01) 

(58) Field of Classification Search CPC ........ G03F 7/0045; G03F 7/0397; G03F 7/38; G03F 7/0382; G03F 7/0392; G03F 7/2006; G03F 7/2037; G03F 7/2041; G03F 7/2059; G03F 7/30; C08F 220/24; C08F 220/38; C08F 220/382; C08F 224/00; C08F 228/00; C08F 2220/382; 

<img src='content_image/911152.jpg'>

# (IO) Patent No.: US 10,620,533 B2 

# Apr. 14, 2020 (45) Date of Patent: 

## (56) References Cited 

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Hinsberg et al., Extendibility of Chemically Amplified Resists: Another Brick Wall?, SPIE vol. 5039 (2003) (14 pages). 

Kishikawa et al., Assessment of Trade-off between Resist Resolu› tion and Sensitivity for Optimization of Hyper-NA Immersion Lithography, SPIE vol. 6520 (2007) (9 pages). 

Cwwang et al., Photobase Generator and Photo Decomposable Quencher for High-resolution Photoresist Applications, SPIE vol. 7639 (2010) (15 pages). 

Office Action dated Aug. 29, 2017, issued in counterpart Taiwanese Application No. 105133367. (5 pages). 

Office Action dated Aug. 14, 2018, issued in counterpart Japanese Application No. 2015-205402, with English translation (12 pages). 

* cited by examiner 

Primary Examiner - John S Chu (74) Attorney, Agent, or Firm - Westerman, Hattori, Daniels & Adrian, LLP 

## (57) ABSTRACT 

A resist composition comprising a base polymer and a sulfonium or iodonium salt of sulfonic acid containing a morpholino group offers dimensional stability on PPD and a satisfactory resolution. 

C08F 228/02; C08F 228/06; C07C 303/32; C07C 309/04; C07C 309/06; C07C 309/07; C07C 309/10; C07C 309/12; C07C 309/13; C07C 309/17; C07C 309/19; C07C 309/23; C07C 309/24; C07C 309/09 USPC ..... 430/270.1, 326, 919, 920; 526/243, 245, 526/247, 266, 268, 287, 319, 321, 326; 562/104, 107, 108, 111, 113 See application file for complete search history. 

US010620533B2 

## U.S. PATENT DOCUMENTS 

## FOREIGN PATENT DOCUMENTS 

## OTHER PUBLICATIONS 

## 17 Claims, No Drawings 

