# ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE 

## CROSS-REFERENCE TO RELATED APPLICATIONS 

[0001] This application is a Continuation of PCT Interna› tional Application No. PCT/JP2019/006235 filed on Feb. 20, 2019, which claims priority under 35 U.S.C. § 119(a) to Japanese Patent Application No. 2018-035948 filed on Feb. 28, 2018. The above application is hereby expressly incor› porated by reference, in its entirety, into the present appli› cation. 

## BACKGROUND OF THE INVENTION 

[0002] The present invention relates to an act1mc ray› sensitive or radiation-sensitive resin composition, a resist film, a pattern forming method, and a method for manufac› turing an electronic device. 

[0003] In processes for manufacturing semiconductor devices such as an integrated circuit (IC) and a large scale integrated circuit (LSI) in the related art, microfabrication by lithography using a chemically amplified resist composition has been performed. 

[0004] For example, a resist composition including a photoacid generator and a compound (acid diffusion control agent) which is basic relative to the photoacid generator is disclosed in the section of Examples of JP2012-242800A. The acid diffusion control agent acts as a quencher which traps an acid generated from the photoacid generator upon exposure. The diffusion of the acid generated from the photoacid generator into the unexposed portion is controlled by the action of the quencher controls. 

## SUMMARY OF THE INVENTION 

[0005] The present inventors have conducted studies on the resist composition described in JP2012-242800A, and have thus revealed that an acid diffusion control agent easily forms an aggregate and tends to be unevenly present in a system. Further, as a result, they have revealed that since the concentration distribution of the acid diffusion control agent is uneven in the resist film, the suppression (neutralization) of diffusion of an acid generated from a photoacid generator does not proceed evenly, and the line width roughness (LWR) of a pattern thus formed is not necessarily sufficient. 

[0006] Therefore, an object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having an excellent pattern line width roughness (LWR). 

[0007] In addition, another object of the present inven› tion is to provide a resist film, a pattern forming method, and a method for manufacturing an electronic device, each of which uses the actinic ray-sensitive or radiation-sensitive resin composition. 

[0008] The present inventors have conducted intensive studies to accomplish the objects, and as a result, they have thus found that the problems can be solved with an actinic 

## 1. Field of the Invention 

## 2. Description of the Related Art 

ray-sens1t1ve or radiation-sensitive resin compos1t10n including a resin having a specific structure, thereby com› pleting the present invention. 

[0010] [1] An actinic ray-sensitive or radiation-sensitive resin composition comprising a resin including a repeating unit derived from a monomer having a salt structure and a repeating unit having a group whose polarity increases through decomposition by the action of an acid, 

[0013] [2] The actinic ray-sensitive or radiation-sensitive resin composition as described in [1], 

[0015] [3] The actinic ray-sensitive or radiation-sensitive resin composition as described in [1] or [2], further com› prising a photoacid generator that generates an acid upon irradiation with actinic rays or radiation. 

[0016] [ 4] The actinic ray-sensitive or radiation-sensitive resin composition as described in [3], 

[0018] [5] A resist film formed using the actinic ray› sensitive or radiation-sensitive resin composition as described in any one of [1] to [4]. 

[0019] [ 6] A pattern forming method comprising: 

[0023] [7] A method for manufacturing an electronic device, comprising the pattern forming method as described in [6]. 

[0024] According to the present invention, it is possible to provide an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having an excellent pattern line width roughness (LWR). 

[0026] Hereinafter, the present invention will be described in detail. 

[0009] That is, the present inventors have found that the problems can be solved by the following configura› tions. 

[0011] in which the salt structure consists of an anionic structure moiety and an actinic ray-sensitive decom› posable or radiation-sensitive decomposable cationic structure moiety, and 

[0012] a pKa of a monomer obtained by substituting the cationic structure moiety in the salt structure with a hydrogen atom is -0.80 or more. 

[0014] in which the monomer having the salt structure is a monomer represented by General Formula (Xl) which will be described later. 

[0017] in which a pKa of an acid generated from the photoacid generator is smaller than a pKa of a mono› mer obtained by substituting the cationic structure moiety in the salt structure with a hydrogen atom. 

[0020] a resist film forming step of forming a resist film using the actinic ray-sensitive or radiation-sensitive resin composition as described in any one of [1] to [ 4]; 

[0021] an exposing step of exposing the resist film; and 

[0022] a developing step of developing the exposed resist film using a developer. 

[0025] In addition, according to the present invention, it is possible to provide a resist film, a pattern forming method, and a method for manufacturing an electronic device, each of which uses the actinic ray-sensitive or radiation-sensitive resin composition. 

## DESCRIPTION OF THE PREFERRED EMBODIMENTS 

[0027] Description of configuration requirements described below may be made on the basis of repre- 

