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# c12) United States Patent Hatakeyama et al. 

# (54) RESIST COMPOSITION AND PATTERNING PROCESS 

(71) Applicant: SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP) 

(72) Inventors: Jun Hatakeyama, Joetsu (JP); Masaki Ohashi, Joetsu (JP); Masayoshi Sagehashi, Joetsu (JP) 

(73) Assignee: SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP) 

( *) Notice: Subject to any disclaimer, the term ofthis patent is extended or adjusted under 35 U.S.C. 154(b) by O days. 

(21) Appl. No.: 14/529,582 

(22) Filed: Oct. 31, 2014 

## (65) Prior Publication Data 

US 2015/0125794Al May 7, 2015 

## (30) Foreign Application Priority Data 

Nov. 5, 2013 (JP) ................................. 2013-229075 

(51) Int. Cl. 

<img src='content_image/908866.jpg'>

(52) U.S. Cl. CPC ............ G03F 710045 (2013.01); G03F 710046 (2013.01); G03F 710382 (2013.01); G03F 710397 (2013.01); G03F 712041 (2013.01); G03F 7130 (2013.01) 

( 58) Field of Classification Search None See application file for complete search history. 

## (56) References Cited 

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## U.S. PATENT DOCUMENTS 

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# (10) Patent No.: US 9,250,518 B2 

# (45) Date of Patent: Feb.2,2016 

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JPO English abstract for JP 2006-258980 (2006).* Machine-assisted English translation for JP 2006-258980 provided by JPO (2006).* 

Hinsberg et al., "Extendibility of Chemically Amplified Resists: Another Brick Wall?", Proceedings of SPIE, 2003, pp. 1-14, vol. 5039. 

Kishikawa et al., "Assessment of trade-off between resist resolution and sensitivity for optimization of hyper-NA immersion lithogra› phy", Proceedings of SPIE, 2007, pp. 65203L-l-65203L-9, vol. 6520. 

Wang et al., "Photo base generator and photo decomposable quencher for high-resolution photoresist applications", Proceedings of SPIE, 2010, pp. 76390W-l-76390W-15, vol. 7639. 

* cited by examiner 

Primary Examiner - Sin Lee 

(74) Attorney, Agent, or Firm - Westerman, Hattori, Daniels & Adrian, LLP 

## (57) ABSTRACT 

A photoresist film containing a sulfonium or iodonium salt of carboxylic acid having an amino group has a high dissolution contrast and offers improved resolution, wide focus margin and minimal LWR when used as a positive resist film adapted for alkaline development and a negative resist film adapted for organic solvent development. 

US009250518B2 

## FOREIGN PATENT DOCUMENTS 

## OTHER PUBLICATIONS 

## 15 Claims, No Drawings 

