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# (12) United States Patent 

# Kim et al. 

# (54) POLYMER FOR CHEMICALLY AMPLIFIED RESIST AND A RESIST COMPOSITION USING THE SAME 

(75) Inventors: Deog-Bae Kim, Hwaseong-kun (KR); Hyun-Jin Kim, Hwaseong-kun (KR); Yong-Joon Choi, Hwaseong-kun (KR); Yoon-Sik Chung, Hwaseong-kun (KR) 

(73) Assignee: Dongjin Semichem Co., Ltd., Incheon (KR) 

( *) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 159 days. 

(21) Appl. No.: 10/070,477 

(22) PCT Filed: Aug. 25, 2000 

(86) PCT No.: PCT/KR00/00956 § 371 (c)(l), (2), ( 4) Date: Jul. 23, 2002 

(87) PCT Pub. No.: WO0l/18603 PCT Pub. Date: Mar. 15, 2001 

## (30) Foreign Application Priority Data 

Sep. 7, 1999 (KR) ............................................ 11-37772 

(51) Int. Cl.7 ................................................ G03F 7/004 

(52) U.S. Cl. ....................... 430/270.1; 430/914; 522/35 

(58) Field of Search .............................. 430/270.1, 914; 522/35 

## (56) References Cited 

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## U.S. PATENT DOCUMENTS 

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# (10) Patent No.: US 6,767,687 Bl 

# (45) Date of Patent: Jul. 27, 2004 

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MacDonald et al., "Airborne Chemical Contamination of a Chemically Amplified Resist," SPIE, vol. 1466 (1991). 

Schlegel, 37th Japanese Applied Physics Society Announce› ment, 28p-ZE-4 (1990). 

Ueno et al., 36th Japanese Applied Physics Society Announcement, lp-k-7, (1989). 

Ito et al., "Applications of Photoinitiators to the Design of Resists for Seminconductor Manufacturing," Polymers in Electronics, American Chemical Society, pp. 11-23 (1984). 

* cited by examiner 

Primary Examiner-Mark F. Huff 

Assistant Examiner-Amanda Walke 

(74) Attorney, Agent, or Firm-Baker Botts LLP 

## (57) ABSTRACT 

The present invention relates to a polymer for a chemically amplified resist and a resist composition using the same. The present invention provides a polymer represented by the Formula (1) and a chemically resist composition for extreme ultraviolet light comprising the same. The chemically ampli› fied resist composition comprising the polymer represented by the formula (1) of the present invention responds to mono wavelength in a micro-lithography process and can embody a micro-pattern of high resolution on a substrate. 

US006767687Bl 

## FOREIGN PATENT DOCUMENTS 

## OTHER PUBLICATIONS 

## 5 Claims, No Drawings 

