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# (12) United States Patent 

# Endo et al. 

# (54) PATTERN FORMATION METHOD 

(75) Inventors: Masayuki Endo, Osaka (JP); Masaru Sasago, Osaka (JP) 

(73) Assignee: Matsushita Electric Industrial Co., Ltd., Osaka (JP) 

( *) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 236 days. 

(21) Appl. No.: 10/279,063 

(22) Filed: Oct. 24, 2002 

## ( 65) Prior Publication Data 

US 2003/0087194 Al May 8, 2003 

## (30) Foreign Application Priority Data 

Oct. 31, 2001 (JP) ....................................... 2001-334253 

(51) Int. Cl.7 .................................................. G03F 7/00 

(52) U.S. Cl. ..................... 430/322; 430/270.1; 430/296 

(58) Field of Search .............................. 430/270.1, 296, 430/311, 322 

## (56) References Cited 

<img src='content_image/898237.jpg'>

## U.S. PATENT DOCUMENTS 

<img src='content_image/898249.jpg'>

# (10) Patent No.: US 6,913,873 B2 

# (45) Date of Patent: Jul. 5, 2005 

<img src='content_image/898238.jpg'>

## FOREIGN PATENT DOCUMENTS 

<img src='content_image/898243.jpg'>

"High Performance EB Chemically Amplified Resist Using Alicyclic Protetive Groups"; Jun-Ichi Kon et al.; SPIE, v3999(2000);p. 1207-1214. * 

* cited by examiner 

Primary Examiner-Kathleen Duda 

(74) Attorney, Agent, or Firm-McDermott Will & Emery LLP 

## (57) ABSTRACT 

A resist film is formed from a chemically amplified resist material including a phenol polymer, an acrylic polymer and an onium salt serving as an acid generator. The resist film is selectively irradiated for pattern exposure with extreme UV of a wavelength of a 1 nm through 30 nm band or an electron beam, and is developed after the pattern exposure, so as to form a resist pattern. 

US006913873B2 

## OTHER PUBLICATIONS 

## 6 Claims, 4 Drawing Sheets 

