content_image/885387.jpg
## SEMICONDUCTOR RESIST COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION 

## CROSS-REFERENCE TO RELATED APPLICATION 

[0001] This application is a continuation-in-part of U.S. patent application Ser. No. 16/211,145, filed on Dec. 5, 2018, which claims priority to and the benefit of Korean Patent Application Nos. 10-2018-0089414 filed in the Korean Intellectual Property Office on Jul. 31, 2018, and 10-2019-0090516 filed in the Korean Intellectual Property Office on Jul. 25, 2019, the entire contents of all of which are incorporated herein by reference. 

[0002] One or more aspects of embodiments of this dis› closure are directed toward a semiconductor resist compo› sition and a method of forming patterns using the compo› sition. 

[0003] EUV (extreme ultraviolet) lithography is recently being looked at as one essential technology for manufactur› ing next generation semiconductor devices. The EUV lithog› raphy is a pattern-forming technology using an EUV ray having a wavelength of about 13.5 nm as an exposure light source. By utilizing the EUV lithography, an extremely fine pattern ( e.g., a pattern having a width of less than or equal to about 20 nm) may be formed in an exposure process during a manufacture of a semiconductor device. 

[0004] The extreme ultraviolet (EUV) lithography is real› ized through development of compatible photoresists which can be performed at a spatial resolution (of the photoresist) of less than or equal to about 16 nm. Currently, efforts are being made to satisfy insufficient specifications of related chemically amplified (CA) photoresists such as resolution, photospeed, and feature roughness ( e.g., line edge roughness (LER)) for the next generation devices. 

[0005] An intrinsic image blur due to an acid catalyzed reaction in these polymer-type photoresists (e.g., polymer photoresists) limits a resolution in small feature sizes, which is a known phenomenon in electron beam (e-beam) lithog› raphy. The chemically amplified (CA) photoresists are designed for high sensitivity. However, in related CA pho› toresists, their elemental makeups may reduce light absor› bance of the photoresists at a wavelength of about 13.5 nm and thus may decrease their sensitivity. Thus, the chemically amplified (CA) photoresists may partially have more diffi› culties under an EUV exposure. 

[0006] For example, the CA photoresists may have diffi› culties in the small feature sizes due to roughness issues, for example, line edge roughness (LER) of the CA photoresists experimentally turns out to be increased, as a photospeed is decreased partially due to an essence of acid catalyst pro› cesses. Accordingly, a novel high performance photoresist is required in a semiconductor industry because of these defects and problems of the CA photoresists. 

## BACKGROUND 

## 1. Field 

## 2. Description of the Related Art 

[0007] One or more aspects of embodiments of the present disclosure are directed toward a semiconductor resist com› position having improved etch resistance, sensitivity and ease of handling. 

[0008] One or more aspects of embodiments of the present disclosure are directed toward a method of forming patterns using the semiconductor resist composition. 

[0009] A semiconductor resist composition according to an embodiment includes an organometallic compound rep› resented by Chemical Formula 1 and a solvent. 

[0010] In Chemical Formula 1, 

[0011] R$^{1 }$may be selected from a substituted or unsubsti› tuted Cl to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 benzyl group, and-Rc ---0-Rd (wherein Rc is a substituted or unsubstituted Cl to C20 alkylene group and Rd is a substituted or unsubstituted Cl to C20 alkyl group), 2 4 

[0012] R to R may each independently be selected from -OR a and---0C(=O)R 6 , Ra is selected from a substituted or unsubstituted Cl to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, and combinations thereof, and 6 

[0013] R is selected from hydrogen, a substituted or unsubstituted Cl to C20 alkyl group, a substituted or unsub› stituted C3 to C20 cycloalkyl group, a substituted or unsub› stituted C2 to C20 alkenyl group, a substituted or unsubsti› tuted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, and combinations thereof. 

[0014] A method of forming patterns according to another embodiment includes forming an etching subject layer on a substrate, coating the semiconductor resist composition on the etching subject layer to form a photoresist layer, pat› terning the photoresist layer to form a photoresist pattern, and etching the etching subject layer using the photoresist pattern as an etching mask. 

[0015] The semiconductor resist composition according to an embodiment has relatively excellent ( e.g., suitable) etch resistance and sensitivity and may be easily handled, and thus may provide a photoresist pattern having improved sensitivity and limit resolution, and a high aspect ratio without a pattern collapse. 

## BRIEF DESCRIPTION OF THE DRAWINGS 

[0016] FIGS. 1-5 are cross-sectional views of acts of a method of forming patterns using a semiconductor resist composition according to an embodiment, and 

[0017] FIG. 6 shows a SEM image of a resist line obtained by using the semiconductor resist composition according to 

<img src='content_image/885387.jpg'>

## SUMMARY 

Chemical Formula 1 

