[0519] (iii) a step of developing the exposed resist film with a developer (developing step). 

[0520] The pattern forming method of the embodiment of the present invention is not particularly limited as long as it includes the steps (i) to (iii), and may further include the following steps. 

[0521] In the pattern forming method of the embodi› ment of the present invention, the exposing method in the exposing step (ii) may be liquid immersion expo› sure. 

[0522] The pattern forming method of the embodiment of the present invention preferably includes a prebaking (PB) step (iv) before the exposing step (ii). 

[0523] The pattern forming method of the embodiment of the present invention preferably includes a post› exposure baking (PEB) step (v) after the exposing step (ii) and before the developing step (iii). 

[0524] The pattern forming method of the embodiment of the present invention may include the exposing step (ii) a plurality of times. 

[0525] The pattern forming method of the embodiment of the present invention may include the pre baking step (iv) a plurality of times. 

[0526] The pattern forming method of the embodiment of the present invention may include the post-exposure baking step (v) a plurality of times. 

[0527] In the pattern forming method of the embodiment of the present invention, the film forming step (i), the exposing step (ii), and the developing step (iii) described above can be performed by a generally known method. 

[0528] In addition, a resist underlayer film (for example, spin on glass (SOG), spin on carbon (SOC), and an antireflection film) may be formed between the resist film and the support, as desired. As a material consti› tuting the resist underlayer film, known organic or inorganic materials can be appropriately used. 

[0529] A protective film (topcoat) may be formed on the upper layer of the resist film. As the protective film, a known material can be appropriately used. For example, the compositions for forming a protective film disclosed in the specification of US2007 / 0178407 A, the specification ofUS2008/0085466A, the specification of US2007 /0275326A, the specification of US2016/0299432A, the specification of US2013/ 0244438A, or the specification of WO2016/157988A can be suitably used. The composition for forming a protective film preferably includes the above-described acid diffusion control agent. 

[0530] A protective film may be formed on the upper layer of the resist film including the above-mentioned hydrophobic resin. 

[0531] The support is not particularly limited, and a sub› strate which is generally used in a step of manufacturing a semiconductor such as an IC, and a process for manufac› turing a circuit board for a liquid crystal, a thermal head, or the like, and other lithographic processes of photofabrication can be used. Specific examples of the support include an inorganic substrate such as silicon, SiO$_{2}$ , and SiN. 

[0532] For any of the prebaking step (iv) and the post› exposure baking step (v), the baking temperature is prefer› ably 70° C. to 130° C., and more preferably 80° C. to 120° C. 

[0533] For any of the prebaking step (iv) and the post-exposure baking step (v), the baking time is pref- 

erably 30 to 300 seconds, more preferably 30 to 180 seconds, and still more preferably 30 to 90 seconds. 

[0534] The baking may be performed using a unit included in an exposure apparatus and a development device, or may also be performed using a hot plate or the like. 

[0535] A light source wavelength used in the exposing step is not particularly limited, and examples thereof include infrared rays, visible light, ultraviolet rays, far ultraviolet rays, extreme ultraviolet rays (EUV), X-rays, and electron beams. Among those, far ultraviolet rays are preferable, and a wavelength thereof is preferably 250 nm or less, more preferably 220 nm or less, and still more preferably 1 to 200 mu. Specific examples thereof include a KrF excimer laser (248 nm), an ArF excimer laser (193 nm), an F$_{2 }$ excimer laser (157 mu), X-rays, EUV (13 mu), and electron beams, the KrF excimer laser, the ArF excimer laser, EUV, or the electron beams are preferable. 

[0536] In the developing step (iii), the developer may be either an alkali developer or a developer including an organic solvent (hereinafter also referred to as an organic developer). 

[0537] As the alkali developer, a quaternary ammonium salt typified by tetramethylammonium hydroxide is usually used, but in addition to this, an alkaline aqueous solution such as an inorganic alkali, primary to tertiary amines, an alcoholamine, and a cyclic amine can also be used. 

[0538] Furthermore, the alkali developer may include an appropriate amount of alcohols and/or a surfactant. The alkali concentration of the alkali developer is usually 0.1 % to 20% by mass. The pH of the alkali developer is usually 10 to 15. 

[0539] A time period for performing development the using the alkali developer is usually 10 to 300 seconds. 

[0540] The alkali concentration, the pH, and the devel› opment time using the alkali developer can be appro› priately adjusted depending on a pattern formed. 

[0541] The organic developer is preferably a developer including at least one organic solvent selected from the group consisting of a ketone-based solvent, an ester-based solvent, an alcohol-based solvent, an amide-based solvent, an ether-based solvent, and a hydrocarbon-based solvent. 

[0542] Examples of the ketone-based solvent include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 2-heptanone (methyl amyl ketone), 4-heptanone, 1-hexanone, 2-hexanone, diisobutyl ketone, cyclohexanone, methylcyclohexanone, phenyl acetone, methyl ethyl ketone, methyl isobutyl ketone, acetyl acetone, acetonyl acetone, ionone, diacetonyl alcohol, acetyl carbinol, acetophenone, methyl naphthyl ketone, isophorone, and propylene carbon› ate. 

[0543] Examples of the ester-based solvent include methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, pentyl acetate, isopentyl acetate, amyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethyl› ene glycol monoethyl ether acetate, ethyl-3-ethoxypropi› onate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, methyl formate, ethyl formate, butyl formate, propyl formate, ethyl lactate, butyl lactate, propyl lactate, butyl butyrate, methyl 2-hydroxyisobutyrate, isoamyl acetate, isobutyl isobutyrate, and butyl propionate. 

[0544] As the alcohol-based solvent, the amide-based sol› vent, the ether-based solvent, and the hydrocarbon-based 

