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# c12) United States Patent 

# Ouyang 

# (54) EXTREME ULTRAVIOLET PHOTOLITHOGRAPHY METHOD WITH INFILTRATION FOR ENHANCED SENSITIVITY AND ETCH RESISTANCE 

(71) Applicant: Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW) 

(72) Inventor: Christine Y Ouyang, Hsinchu (TW) 

(73) Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW) 

( *) Notice: Subject to any disclaimer, the term ofthis patent is extended or adjusted under 35 U.S.C. 154(b) by O days. 

(21) Appl. No.: 16/444,175 

(22) Filed: Jun. 18, 2019 

## (65) Prior Publication Data 

US 2020/0133131 Al Apr. 30, 2020 

(60) Provisional application No. 62/752,692, filed on Oct. 30, 2018. 

(51) Int. Cl. G03F 7132 (2006.01) 

(52) U.S. Cl. CPC ...................................... G03F 7132 (2013.01) 

(58) Field of Classification Search CPC ......... G03F 7/0041---0045; G03F 7/028; G03F 7/0285; G03F 7/06; G03F 7/063; G03F 7/32; G03F 7/70033 USPC ................... 355/27, 77; 430/270.1, 322, 323 See application file for complete search history. 

## Related U.S. Application Data 

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# (IO) Patent No.: US 10,845,704 B2 

# Nov. 24, 2020 (45) Date of Patent: 

## (56) References Cited 

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A. Singh, et al., "Impact of Sequential Infiltration Synthesis on Patten Fidelity ofDSA Lines", Proceedings of SPIE 9425, Advances in Patterning Material s and Processes XXXII, 94250N (Mar. 20, 2015), doi: 10.1117/12.208609 l. 

Primary Examiner - Colin W Kreutzer (74) Attorney, Agent, or Firm - Haynes and Boone, LLP 

## (57) ABSTRACT 

The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a sub› strate; performing an infiltration process to introduce a metallic compound into the photoresist to enhance a sensi› tivity of the photoresist layer to an extreme ultraviolet (EUV) radiation; performing an exposing process to the photoresist layer using the EUV radiation; and performing a developing process to the photoresist layer to form a pat› terned resist layer. 

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US010845704B2 

## U.S. PATENT DOCUMENTS 

(Continued) 

## OTHER PUBLICATIONS 

## 20 Claims, 8 Drawing Sheets 

