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# c19) United States 

# c12) Patent Application Publication Hatakeyama 

# (54) POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS 

(71) Applicant: Shin-Etsu Chemical Co., Ltd., Tokyo (JP) 

(72) Inventor: Jun Hatakeyama, Joetsu-shi (JP) 

(73) Assignee: Shin-Etsu Chemical Co., Ltd., Tokyo (JP) 

(21) Appl. No.: 16/708,851 

(22) Filed: Dec. 10, 2019 

## (30) Foreign Application Priority Data 

Dec. 14, 2018 (JP) ................................. 2018-234513 

<img src='content_image/913271.jpg'>

(51) Int. Cl. 

(52) U.S. Cl. CPC .............. G03F 71039 (2013.01); G03F 7/162 (2013.01); C08F 212114 (2013.01); C08F 220118 (2013.01) 

## (57) ABSTRACT 

A positive resist composition comprising a base polymer comprising recurring units having a nitrogen-containing tertiary ester structure exhibits a high sensitivity, high reso› lution, low edge roughness (LER, LWR) and small size variation, and forms a pattern of good profile after exposure and development. 

US 20200192221Al 

# c10) Pub. No.: US 2020/0192221 Al 

# (43) Pub. Date: Jun. 18, 2020 

## Publication Classification 

<img src='content_image/913287.jpg'>

