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13. A method of forming patterns, the method comprising: coating the semiconductor resist composition of claim 1 on an etching subject layer to form a photoresist layer; patterning the photoresist layer to form a photoresist pattern; and etching the etching subject layer using the photoresist pattern as an etching mask. 

14. The method of claim 13, wherein the photoresist pattern is formed using light in a wavelength of about 5 nm to about 150 nm. 

15. The method of claim 13, wherein the etching subject layer is provided on a substrate. 

16. The method of claim 15, further comprising providing a resist underlayer between the substrate and the photoresist layer. 

17. The method of claim 13, further comprising: drying the coated semiconductor resist composition at about 80° C. to about 120° C., and curing the patterned photoresist layer at 90° C. to about 200° C. 

18. The method of claim 13, wherein the photoresist pattern has a width of about 5 nm to about 100 nm. 

19. The method of claim 13, wherein the photoresist pattern is formed using an extreme ultraviolet (EUV) light source of a wavelength of about 13.5 nm. 

20. A system of forming patterns, the system comprising: means for coating the semiconductor resist composition of claim 1 on an etching subject layer to form a photoresist layer; means for patterning the photoresist layer to form a photoresist pattern; and means for etching the etching subject layer using the photoresist pattern as an etching mask. 

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