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[0746] In Table 5, the surfactants which are additives are as follows. 

[0747] W-1: Megaface F176 (manufactured by DIC Cor› poration) (fluorine-based), 

[0748] W-2: Megaface ROS (manufactured by DIC Corpo› ration) (fluorine-based and silicon-based), 

[0749] W-3: Polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) (silicon-based), and 

[0750] W-4: Compound having the following structure. 

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[0751] In Table 5, the solvents are as follows. 

[0752] S-1: Propylene glycol monomethyl ether acetate (PGMEA) 

[0753] S-2: y-Butyrolactone 

[0754] S-3: Cyclohexanone 

[0755] S-4: Propylene glycol monomethyl ether(PGME) 

[0756] S-5: Ethyl lactate 

[0757] S-6: EEP (ethyl 3-ethoxypropionate) 

[0758] <Evaluation> 

[0759] (Pattern Formation) 

[0760] The resist composition prepared above was coated on an Si substrate (manufactured by Advanced Materials Technology) which had been subjected to a hexamethyldisi› lazane treatment while not providing an antireflection layer thereon, and baked (pre bake) at 100° C. for 60 seconds to form a resist film having a film thickness of 700 nm. The wafer having the resist film formed thereon was subjected to 

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pattern exposure through an exposure mask, using a KrF excimer laser scanner (NA 0.80). Thereafter, the wafer was baked (post exposure bake (PEB)) at 100° C. for 60 seconds, developed using an aqueous tetramethylammonium hydrox› ide solution (2.38% by mass) for 60 seconds, rinsed with pure water, and then spin-dried. Thus, an isolated space pattern having a space of 140 nm and a pitch of 1,650 nm was obtained. 

N-2 

[0761] (Depth of Pocus; DOF) 

[0762] The exposure dose and the focus for forming an isolated space pattern having a space of 140 nm and a pitch of 1,650 nm were defined as an optimal exposure dose and an optimal focus, respectively, and the width of focus which allowed the pattern size to be 140 nm–10% when the focus was changed ( defocused) while keeping the exposure dose at the optimal exposure dose was determined. Higher values indicate that the change in performance due to a change in the focus is smaller and the depth of focus (DOF) is better. 

N-3 

N-4 

[0763] (Exposure Latitude; EL) 

[0764] The exposure dose for forming the isolated space pattern having a space of 140 nm and a pitch of 1,650 nm was defined as an optimal exposure dose, and the exposure dose width which allowed the pattern size to be 140 nm– 10% when the exposure dose was changed was determined. This value was divided by the optimal exposure dose, and the resultant value was expressed in a percentage. Higher values indicate that the change in performance due to a change in the expo› sure dose is smaller and the exposure latitude (EL) is better. 

1. An active light-sensitive or radiation-sensitive resin composition comprising: 

2. The active light-sensitive or radiation-sensitive resin composition according to claim 1, wherein the molecular weight of the compound (C) is from 200 to 3,000. 

3. The active light-sensitive or radiation-sensitive resin composition according to claim 1, wherein the compound (C) is a compound having eight or more carbon atoms. 

4. The active light-sensitive or radiation-sensitive resin composition according to claim 1, wherein the compound (C) is a compound having two or more groups or bonds selected from the group consisting of an ether bond, a hydroxyl group, an ester bond, and a ketone bond. 

5. The active light-sensitive or radiation-sensitive resin composition according to claim 1, wherein the compound (C) is a compound having three or more groups or bonds selected from the group consisting of an ether bond, a hydroxyl group, an ester bond, and a ketone bond. 

6. The active light-sensitive or radiation-sensitive resin composition according to claim 1, wherein the compound (C) is a compound having four or more groups or bonds selected from the group consisting of an ether bond, a hydroxyl group, an ester bond, and a ketone bond. 

7. The active light-sensitive or radiation-sensitive resin composition according to claim 1, wherein the compound (C) is a compound having two or more ether bonds. 

What is claimed is: 

a resin (A); 

a compound (B) capable of generating an acid upon irra› diation with active light or radiation; and 

a compound (C) having at least one oxygen atom, 

wherein a molecular weight of the compound (C) is from 150 to 3,000, and 

the resin (A) and the compound (B) are not included in the compound (C). 

