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# c19) United States c12) Patent Application Publication 

# Hatakeyama et al. 

# (54) RESIST COMPOSITION AND PATTERNING PROCESS 

(71) Applicant: Shin-Etsu Chemical Co., Ltd., Tokyo (JP) 

(72) Inventors: Jun Hatakeyama, Joetsu-shi (JP); Masaki Ohashi, Joetsu-shi (JP); Takayuki Fujiwara, Joetsu-shi (JP) 

(73) Assignee: Shin-Etsu Chemical Co., Ltd., Tokyo (JP) 

(21) Appl. No.: 16/530,438 

(22) Filed: Aug. 2, 2019 

## (30) Foreign Application Priority Data 

Aug. 9, 2018 (JP) ................................. 2018-150050 

(51) Int. Cl. 

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## Publication Classification 

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(52) U.S. Cl. CPC .......... G03F 710045 (2013.01); G03F 710392 (2013.01); G03F 710382 (2013.01); C07D 295/088 (2013.01); C07C 217106 (2013.01); C07D 235112 (2013.01); G03F 7/162 (2013.01); C07D 207108 (2013.01); C07D 211146 (2013.01); C07D 453102 (2013.01); C07D 209152 (2013.01); C07D 451102 (2013.01); C07D 211122 (2013.01) 

## (57) ABSTRACT 

A resist composition comprising a base polymer and a quencher in the form of an amine compound having an iodized aromatic ring bonded to the nitrogen atom via a divalent hydrocarbon group offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone. 

US 20200050105Al 

# c10) Pub. No.: US 2020/0050105 Al 

# (43) Pub. Date: Feb. 13, 2020 

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