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# c12) United States Patent 

# Yamashita 

# (54) POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME 

(75) Inventor: Katsuhiro Yamashita, Shizuoka (JP) 

(73) Assignee: FUJIFILM Corporation, Tokyo (JP) 

( *) Notice: Subject to any disclaimer, the term ofthis patent is extended or adjusted under 35 U.S.C. 154(b) by O days. 

(21) Appl. No.: 12/259,056 

Oct. 27, 2008 (22) Filed: 

## (65) Prior Publication Data 

US 2009/0111047 Al Apr. 30, 2009 

## (30) Foreign Application Priority Data 

Oct. 26, 2007 (JP) ............................. 2007-279579 

(51) Int. Cl. 

<img src='content_image/885415.jpg'>

(52) U.S. Cl. ...................... 430/270.1; 430/913; 568/19; 568/28 

(58) Field of Classification Search ....................... None See application file for complete search history. 

<img src='content_image/885418.jpg'>

# (IO) Patent No.: US 7,858,289 B2 

# Dec. 28, 2010 (45) Date of Patent: 

## (56) References Cited 

<img src='content_image/885417.jpg'>

## FOREIGN PATENT DOCUMENTS 

<img src='content_image/885416.jpg'>

* cited by examiner 

Primary Examiner-Amanda C. Walke 

(74) Attorney, Agent, or Firm-Sughrue Mion, PLLC 

## (57) ABSTRACT 

A positive resist composition for electron beam, X-ray or EUV includes a compound having a proton acceptor func› tional group and capable of producing an acid radical upon irradiation with an actinic ray or radiation to reduce or lose the acceptor property or to change the proton acceptor functional group to be acidic, wherein the positive resist composition has a solid content concentration of from 2.5 to 4.5 mass%. 

US007858289B2 

## U.S. PATENT DOCUMENTS 

## 13 Claims, No Drawings 

