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[0656] <Preparation of Resist Composition> 

[0657] Respective components listed in Table 3 were mixed so as to be dissolved, thereby preparing resist com- positions of each example. 

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[0658] In Table 3, each abbreviation has the following meaning. The numerical values in the parentheses are blend› ing amounts (parts by mass). 

[0659] (A)-1 to (A)-12: polymers Pl to P12 described above 

[0660] (B)-1: acid generator represented by Chemical Formula (B)-1 

[0661] (D)-1: acid diffusion control agent represented by Chemical Formula (D)-1 

[0662] (S)-1: mixed solution obtained by mixing pro› pylene glycol monomethyl ether acetate and propylene glycol monomethyl ether at mass ratio of 6:4 

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[0663] <Evaluation of Resist Composition> 

[0664] A resist pattern was formed using each of the obtained resist compositions, and the sensitivity (Eop ), the resolution, and LWR were respectively evaluated in the following manners. 

[0665] [Formation of Resist Pattern] 

[0666] An 8-inch silicon substrate to which a hexameth› yldisilazane (HMDS) had been applied was coated with the resist composition of each example using a spinner, and a prebake (PAB) treatment performed thereon on a hot plate at a temperature of 110° C. for 60 seconds so that the hot plate was dried to form a resist film having a film thickness of 30 nm. Next, drawing (exposing) was performed on the resist film at an accelerating voltage of 100 kV such that the target size was set to a line width of 50 mm and 1: 1 line and space pattern (hereinafter, referred to as an "LS pattern") using an electron beam lithography device JEOL-JBX-9300FS (manufactured by JEOL Ltd.), and a post exposure bake (PEB) treatment was performed thereon at 110° C. for 60 seconds. Subsequently, alkali development was performed at 23° C. for 60 seconds using a 2.38 mass % tetramethyl› ammonium hydroxide (TMAH) aqueous solution "NMD-3" (trade name, manufactured by TOKYO OHKA KOGYO CO., LTD.), and water rinsing was performed for 15 seconds using pure water. As the result, a 1: 1 LS pattern with a line width of 50 nm was formed. 

[0667] [Evaluation of Optimum Exposure Amount (Eop)] 2 

[0668] An optimum exposure amount Eop (µC/cm ) at which the LS pattern with a target size was formed accord› ing to the method of forming a resist pattern was acquired. The results are listed in Table 4. 

[0669] [Evaluation of Resolution] 

[0670] The limit resolution in the Eop, specifically, the minimum dimension of a pattern to be resolved without collapsing while the exposure amount from the optimum exposure amount Eop was increased to form an LS pattern was acquired using a scanning electron microscope S-9380 (manufactured by Hitachi High-Technologies Corporation). The results are listed in Table 4. 

[0671] Using the LS pattern formed in the section of the "formation of resist pattern", the 3a which is the scale that indicates the LWR was acquired. The "3a" indicates three times (3a) (unit: nm) the standard deviation (a) acquired based on the result of measurement performed by measuring 400 sites ofline positions in the longitudinal direction of the line using a scanning electron microscope (trade name: S-9380, manufactured by Hitachi High-Technologies Cor› poration, accelerating voltage of 800 V). In a case where the value of the 3a is small, this indicates that the roughness of a line side wall is small and an LS pattern with a uniform width is obtained. 

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