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# c12) United States Patent 

# Ohashi et al. 

# (54) SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS 

(75) Inventors: Masaki Ohashi, Jyoetsu (JP); Satoshi Watanabe, Jyoetsu (JP); Youichi Ohsawa, Jyoetsu (JP); Keiichi Masunaga, Jyoetsu (JP); Takeshi Kinsho, Jyoetsu (JP) 

(73) Assignee: Shin-Etsu Chemical Co., Ltd., Tokyo (JP) 

( *) Notice: Subject to any disclaimer, the term ofthis patent is extended or adjusted under 35 U.S.C. 154(b) by 210 days. 

(21) Appl. No.: 13/013,506 

(22) Filed: Jan.25,2011 

## (65) Prior Publication Data 

US 2011/0189607 Al Aug. 4, 2011 

## (30) Foreign Application Priority Data 

Feb. 2, 2010 (JP) ................................. 2010-021078 

(51) Int. Cl. 

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(52) U.S. Cl. USPC ........ 430/270.1; 430/921; 430/925; 560/219; 560/221; 560/222; 560/223; 562/109; 562/110; 562/113 

( 58) Field of Classification Search None See application file for complete search history. 

## (56) References Cited 

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## U.S. PATENT DOCUMENTS 

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# (IO) Patent No.: US 8,691,490 B2 

# (45) Date of Patent: Apr. 8, 2014 

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## FOREIGN PATENT DOCUMENTS 

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Jul. 17, 2012 Notification of Reasons for Refusal issued in Japanese Application No. 2010-021078 (with partial translation). 

Primary Examiner - Sin J. Lee 

(74) Attorney, Agent, or Firm - Oliff PLC 

## (57) ABSTRACT 

There is disclosed a sulfonium salt represented by the follow› ing general formula ( 1). In the formula, X and Y each repre› sents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 car› bon atoms optionally containing a hetero atom; R $^{1 }$represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R 2 and R 3 each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R $^{2 }$and R $^{3 }$may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfo› nium salt usable as a resist composition providing high reso› lution and excellent in LER in photo lithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the poly› mer and a patterning process using the resist composition. 

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US008691490B2 

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## OTHER PUBLICATIONS 

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## 2 Claims, 4 Drawing Sheets 

