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# c12) United States Patent 

# Lai et al. 

# (54) EXTREME ULTRAVIOLET PHOTORESIST WITH HIGH-EFFICIENCY ELECTRON TRANSFER 

(71) Applicant: Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW) 

(72) Inventors: Wei-Han Lai, New Taipei (TW); Chin-Hsiang Lin, Hsin-chu (TW); Chien-Wei Wang, Zhubei (TW) 

(73) Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu (TW) 

( * ) Notice: Subject to any disclaimer, the term ofthis patent is extended or adjusted under 35 U.S.C. 154(b) by O days. 

(21) Appl. No.: 15/614,032 

(22) Filed: Jun. 5, 2017 

## (65) Prior Publication Data 

US 2018/0173101 Al Jun. 21, 2018 

## Related U.S. Application Data 

(60) Provisional application No. 62/434,961, filed on Dec. 15, 2016. 

(51) Int. Cl. 

<img src='content_image/906826.jpg'>

(52) U.S. Cl. CPC ......... G03F 710397 (2013.01); C07D 247102 (2013.01); C07D 273/00 (2013.01); G03F 7/0042 (2013.01) 

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# (IO) Patent No.: US 10,520,813 B2 

# Dec. 31, 2019 (45) Date of Patent: 

(58) Field of Classification Search CPC .... G03F 7/0033; G03F 7/0002; G03F 7/0041; G03F 7/0048; G03F 7/075; G03F 7/09; 

## (56) References Cited 

<img src='content_image/906828.jpg'>

Machine translation of JP 2006-091421 (2006).* 

Primary Examiner - Martin J Angebranndt (74) Attorney, Agent, or Firm - Haynes and Boone, LLP 

## (57) ABSTRACT 

A method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer, a sensitizer, and a photo-acid generator (PAG), wherein the sensitizer includes a resonance ring that includes nitrogen and at least one double bond. The method further includes performing an exposing process to the photoresist layer. The method further includes developing the photoresist layer, thereby forming a patterned photoresist layer. 

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US010520813B2 

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## U.S. PATENT DOCUMENTS 

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## FOREIGN PATENT DOCUMENTS 

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## OTHER PUBLICATIONS 

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## 19 Claims, 7 Drawing Sheets 

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