content_image/888335.jpg
<img src='content_image/888335.jpg'>

## [8] Hydrophobic Resin 

The active light sensitive or radiation sens1t1ve resin composition of the present invention may have a hydropho› bic resin (HR) separate to the compound (B) described above. By adding such a resin, it is possible to expect an effect of making the pattern close to rectangular and an effect of suppressing outgassing. In addition, it is possible to preferably use such a resin composition in a case where exposure is performed by filling a liquid (pure water or the like) with a higher refractive index than air between the photosensitive film and the lens, that is, in a case of performing liquid dipping exposure. 

The hydrophobic resin (HR) described above preferably contains a group which has a fluorine atom, a group which has a silicon atom, or a hydrocarbon group having 5 or more carbon atoms in order to carry out uneven distribution on the film surface. These groups may be present in the main chain of the resin or may be substituted in the side chain. 

Specific examples of the hydrophobic resin (HR) described above include the resins described in paragraphs "0240" to "0247" of JP2010-175858A or the resins described in paragraphs "0349" to "0354" of JP2013- 80006A. 

## [9] Solvent 

Preferable examples of solvents to be used in the active light sensitive or radiation sensitive resin composition of the present invention include ethylene glycol monoethyl ether acetate, cyclohexanone, 2-heptanone, propylene glycol monomethyl ether (PGME, also known as l-methoxy-2- propanol), propylene glycol monomethyl ether acetate (PG› MEA, also known as l-methoxy-2-acetoxypropane), pro› pylene glycol monomethyl ether propionate, propylene glycol monoethyl ether acetate, 3-methoxypropionate methyl, 3-ethoxypropionate ethyl, methyl ~-methoxyisobu- 

-continued 

(PA-16) 

(PA-17) 

(PA-18) 

tyrate, ethyl butyrate, propyl butyrate, methyl isobutyl ketone, ethyl acetate, isoamyl acetate, ethyl lactate, toluene, xylene, cyclohexyl acetate, diacetone alcohol, N-methylpyr› rolidone, N,N-dimethylformamide, y-butyrolactone, N,N- dimethylacetamide, propylene carbonate, ethylene carbon› ate, and the like. It is possible to use these solvents alone or in combination. 

The solid content of the active light sensitive or radiation sensitive resin composition is preferably 1 mass % to 40 mass% of the solid content concentration, more preferably 1 mass % to 30 mass %, and even more preferably 3 mass % to 20 mass %. 

The present invention also relates to a resist film formed using the active light sensitive or radiation sensitive resin composition of the present invention, and such a resist film is, for example, formed by coating a support body such as a substrate with the active light sensitive or radiation sensitive resin composition. The thickness of the resist film is pref› erably 0.02 µm to 0.1 µm. The coating is carried out on the substrate using an appropriate coating method such as spin coating, roll coating, flow coating, dip coating, spray coat› ing, doctor coating as the method for coating the substrate; however, spin coating is preferable, and the rotation speed is preferably 1,000 rpm to 3,000 rpm. The coating film forms a thin film by being prebaked for 1 to 20 minutes at 60° C. to 150° C., preferably for 1 to 10 minutes at 80° C. to 120° C. 

As the material forming the substrate to be processed and the outermost layer thereof, for example, it is possible to use a silicon wafer in a case of a wafer for a semiconductor, and examples of the material forming the outermost layer include Si, Si 0 2 , SiN, SiON, TiN, WSi, BPSG, SOG organic anti-reflection films, and the like. 

In addition, the present invention also relates to a resist- coated mask blank (and a photomask obtained by exposing and developing a resist-coated mask blank) coated with the resist film obtained in the manner described above. In order to obtain such a resist-coated mask blank, in a case where a resist pattern is formed on a photomask blank for manufac› turing a photomask, examples of a transparent substrate to be used include transparent substrates of quartz, calcium fluoride, and the like. Generally, necessary functional films such as a light-shielding film, an anti-reflection film, a phase shift film, and additionally an etching stopper film, or an etching mask film are laminated on the substrate. A film which contains a transition metal such as silicon, chromium, molybdenum, zirconium, tantalum, tungsten, titanium, nio› bium is laminated as the material of the functional film. In addition, examples of the material to be used in the outer› most layer include material where silicon or a material which contains oxygen and/or nitrogen in silicon is set as the main constituent material, silicon compound material where a material which contains transition metals in these is set as the main constituent material, or transition metal compound material where a material which includes one type or more which is selected from transition metals, in particular, chro- mium, molybdenum, zirconium, tantalum, tungsten, tita› nium, niobium, and the like, or a material which includes one or more elements selected from oxygen, nitrogen, and carbon in the transition metals is set as the main constituent material. 

The shielding film may be a single layer, however, the shielding film is more preferably a multi-layer structure in which a plurality of materials are coated on top of each other. In the case of a multi-layer structure, the film thickness of one layer is not particularly limited; however, 5 nm to 100 nm is preferable, and 10 nm to 80 nm is more preferable. The 

