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## PHOTOSENSITIVE COMPOUND, PHOTOACID GENERATOR AND RESIST COMPOSITION CONTAINING THE PHOTOSENSITIVE COMPOUND, AND METHOD FOR MANUFACTURING DEVICE USING THE RESIST COMPOSITION 

[0001] Some of the embodiments of the present invention relate to a photosensitive compound. More particularly, some of the embodiments of the present invention relate to a photosensitive compound including a divalent Te atom which is suitably used for a resist composition for lithog› raphy, using as an exposure source a light of short wave› length such as KrF and the like, especially electron beam or extreme ultraviolet. Further, some of the embodiments of the present invention relate to a photoacid generator and to a resist composition containing the photosensitive compound, and to a method for manufacturing a device using the resist composition. 

[0002] In recent years, manufacture of display device such as liquid crystal display (LCD) and organic EL display (OLED) and formation of semiconductor device are per› formed actively by taking the advantage of photo lithography technique utilizing photoresist. Regarding packages and the like of such electronic parts and electronic products, light of i-line having a wavelength of 365 nm, and lights having a longer wavelength such ash-line (405 nm) and g-line (436 nm) are widely used as an active energy ray. 

[0003] As the device becomes more highly integrated, demand for refining the lithography technology has become higher, and thus there is a tendency to use KrF excimer laser (wavelength of 248 nm), ArF excimer laser (wavelength of 193 nm), light of extremely short wavelength such as extreme ultraviolet (EUV, wavelength of 13.5 nm), and particle beam such as electron beam (EB) for exposure. Lithography technology using such light of short wave› length, especially the lithography technology using extreme ultraviolet (EUV) or electron beam can perform manufac› ture with single patterning. Accordingly, demand for resist composition showing high responsiveness to extreme ultra› violet (EUV) or to electron beam and the like is likely to increase in the future. 

[0004] As the light source for the exposure shift towards shorter wavelength, higher sensitivity to the light source for the exposure is required with the resist composition, and improvement in the lithography characteristics to have reso› lution which enables reproduction of fine dimension pattern is required. As a resist composition which satisfies such requirement, a chemically amplified resist composition using a photoacid generator is known (Patent Literature 1 ). 

[0005] On the other hand, in the conventional EUV lithog› raphy apparatus, power necessary to emit laser from the light source was not enough, and thus there was a limitation in enlarging the dose to efficiently generate acid from the photoacid generator in the resist composition during expo› sure. Accordingly, improvement in acid generation effi› ciency of the photoacid generator in the resist composition is required. 

## TECHNICAL FIELD 

## BACKGROUND 

[0006] [Patent Literature] JP H9-90637 A 

[0007] In the conventional chemically amplified resist composition, it was difficult to simultaneously satisfy the characteristics of the sensitivity to KrF excimer laser, ArF excimer laser, electron beam and extreme ultraviolet (EUV), resolution, depth of focus, and pattern characteristics. 

[0008] In particular, in conventional chemically amplified resist composition for electron beam or EUV and the like, absorbance of electron beam or EUV was little, and thus it was difficult to simultaneously satisfy the characteristics of the sensitivity to electron beam or EUV, resolution, depth of focus, and pattern characteristics. 

[0009] Some of the embodiments of the present invention have an object to provide a photosensitive compound used for resist composition having superior characteristics such as large absorbing efficiency for light of short wavelength such as KrF, especially such as EUV or electron beam; sensitivity; resolution; and pattern performance. 

[0010] Further, some of the embodiments of the present invention have an object to provide a photosensitive com› pound, a photoacid generator and to a resist composition containing the photosensitive compound, and to a method for manufacturing a device using the resist composition. 

[0011] The inventors have conducted extensive studies to solve the afore-mentioned problems. The inventors have found that by allowing a compound having a particular metal to be contained in the resist composition as the photosensitive compound, characteristics such as large absorbing efficiency for light of short wavelength such as KrF, especially such as EUV or electron beam; sensitivity; resolution; and pattern performance can be improved, thereby leading to completion of some of the embodiments of the present invention. 

[0012] That is, one of the embodiments of the present invention is a photosensitive compound including a divalent Te atom. More particularly, one of the embodiments of the present invention is a photosensitive compound having either one of a skeleton selected from an onium salt skeleton, a diazomethane skeleton, an imide skeleton and an oxime skeleton, wherein the skeleton comprises at least one Te atom containing group represented by the following formula (1 ). 

[Chemical Formula 1] 

<img src='content_image/915443.jpg'>

[0013] Here, in the formula (1), each ofR$^{1 }$independently represents either one of a substituent group selected from the group consisting of a linear, branched, or a cyclic hydrocar› bon group having 1 to 20 carbon atoms; and an aryl group having 5 to 20 carbon atoms. A part of or all of the hydrogen atoms of the hydrocarbon group and the aryl group can be substituted by a substituent group. When the hydrocarbon group includes a methylene group, a divalent hetero atom 

## CITATION LIST 

## Patent Literature 

## SUMMARY OF INVENTION 

## Technical Problem 

## Solution to Problem 

