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RTR$_{2}$ X+ wherein x+ comprises a halogen and wherein Rl and R$_{2 }$ comprise aliphatic or aromatic moieties optionally com› prising at least one substituent selected from halogen, alkyl, alkyloxy, aryl, aryloxy, nitro, cyano, halogen-substituted alkyl or halogen-substituted alkyloxy. The substituent A- the photoacid generator comprises the anion of a carborane or peracceptor-substituted organic anions, selected from at least one compound comprising 4,5,6 or 7: 

wherein E comprises an electron-withdrawing group and the ring-protonation eliminates aromaticity. The substituent E of the photoacid generator comprises at least one of cyano (CN), 50 alkyl, alkyloxy, hydrogen, nitro, alkoxycarbonyl, halogen, aryl, aryloxy or aryloxycarbonyl group, or atoms with low EUV photoabsorption cross-sections according to FIG. 1. Another aspect of the present invention comprises a process of forming a patterned material feature on a substrate, the 55 process comprising: 

c) providing a material surface on a substrate; 

d) forming a photoresist layer over the material surface, the photoresist comprising 

(i) an acid-sensitive imaging polymer that is originally insoluble in aqueous, alkaline developers, but becomes soluble upon reaction with protons, with or without the aid of heating; 

(ii) a photoacid generator p+ A- comprising; 

A) an antenna group p+ comprising atoms with high 65 EUV photoabsorption cross-sections according to FIG. 1 comprising an organic chalconium cation of 

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the general structure Ri, R$_{2}$ , R$_{3 }$ y+, wherein R$_{1}$ , Rw and R$_{3 }$ comprise aliphalic or aromatic moieties, optionally comprising at least one substituent selected from halogen, alkyl, alkyloxy, aryl, aryloxy, nitro, cyano, halogen-substituted alkyl halogen-sub› stituted alkyloxy, fluorine, iodine, and y+ comprises 0, Sor Se, or 

B) an antenna group p+ comprising an organic halonium cation of the general structure RiR$_{2}$ X+, wherein FA and R$_{2 }$ comprise aliphatic or aromatic moieties optionally comprising at least one substituent selected from halogen, alkyl, alkyloxy, aryl, aryloxy, nitro, cyano, halogen-substituted alkyl or halogen› substituted alkyloxy, and x+ comprises a halogen; 

C) an acid-forming group A- comprising atoms with low EUV photoabsorption cross-sections, comprised of, a carborane or a peracceptor-substituted aromatic anion, comprising at least one compound selected from 4, 5, 6 or 7: 

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wherein E comprises at least one of cyano (CN), alkyl, alky› loxy, hydrogen, nitro, alkoxycarbonyl, halogen, aryl, aryloxy or aryloxycarbonyl, alkylcarbonyloxy, arylcarbonyloxy or atoms with low EUV photoabsorption cross-section accord› ing to FIG. 1. 

(iii) a small amount of a base quencher; 

c) patternwise exposing the photoresist layer to radiation thereby creating a pattern of radiation-exposed regions in the photoresist layer; 

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