or the photosensitive resist film according to the embodi› ment is highly transparent. Therefore, the optical transpar› ency is increased during the exposure in pattern formation so that a negative type pattern with excellent lithography characteristics is likely to be obtained. 

[0322] The haze value of the photosensitive resin film after the exposure step is measured using a method in conformity with JIS K 7136 (2000). 

[0323] [Development Step] 

[0324] Next, the exposed photosensitive resin film is sub› jected to a development treatment. After the development treatment, it is preferable that a rinse treatment be per› formed. As necessary, a bake treatment (post bake) may be performed. 

[0325] By performing the above-described film forming step, exposure step, and development step, a pattern can be formed. 

[0326] The developing solution used in the development treatment may be an alkali aqueous solution or an organic developing solution containing an organic solvent. 

[0327] As the alkali developing solution, a 0.1 to 10 mass % tetramethylammonium hydroxide (TMAH) aqueous solu› tion can be exemplified. 

[0328] As the organic solvent contained in the organic developing solution, a solvent which is capable of dissolving the component (A) (the component (A) which has not been exposed yet) may be used and can be appropriately selected from known organic solvents. Specific examples of the organic solvent include polar solvents such as ketone sol› vents, ester solvents, alcohol solvents, nitrile solvents, amide solvents, and ether solvents; and hydrocarbon solvents. 

[0329] Examples of the ketone solvents include 1-oc› tanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 4-heptanone, 1-hexanone, 2-hexanone, diisobutyl ketone, cyclohexanone, methylcyclohexanone, phenylacetone, methyl ethyl ketone, methyl isobutyl ketone, acetylacetone, acetonylacetone, ionone, diacetonylalcohol, acetylcarbinol, acetophenone, methyl naphthyl ketone, isophorone, propyl› enecarbonate, y-butyrolactone and methyl amyl ketone (2-heptanone). Among these examples, as a ketone solvent, methyl amyl ketone (2-heptanone) is preferable. 

[0330] Examples of the ester solvents include methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, amyl acetate, isoamyl acetate, ethyl methoxyacetate, ethyl ethoxy› acetate, propylene glycol monomethyl ether acetate (PG› MEA), ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl ether acetate, ethylene glycol monobutyl ether acetate, ethylene glycol monophenyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene gly› col monopropyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monophenyl ether acetate, diethylene glycol mono butyl ether acetate, diethylene glycol monoethyl ether acetate, 2-methoxybutyl acetate, 3-methoxybutyl acetate, 4-methoxybutyl acetate, 3-methyl- 3-methoxybutyl acetate, 3-ethyl-3-methoxybutyl acetate, propylene glycol monomethyl ether acetate, propylene gly› col monoethyl ether acetate, propylene glycol monopropyl ether acetate, 2-ethoxybutyl acetate, 4-ethoxybutyl acetate, 4-propoxybutyl acetate, 2-methoxypentyl acetate, 3-methoxypentyl acetate, 4-methoxypentyl acetate, 2-methyl-3-methoxypentyl acetate, 3-methyl-3-methoxy› pentyl acetate, 3-methyl-4-methoxypentyl acetate, 4-methyl-4-methoxypentyl acetate, propylene glycol diac› etate, methyl formate, ethyl formate, butyl formate, propyl 

formate, ethyl lactate, butyl lactate, propyl lactate, ethyl carbonate, propyl carbonate, butyl carbonate, methyl pyru› vate, ethyl pyruvate, propyl pyruvate, butyl pyruvate, methyl acetoacetate, ethyl acetoacetate, methyl propionate, ethyl propionate, propyl propionate, isopropyl propionate, methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate, methyl-3- methoxypropionate, ethy 1-3-methoxypropionate, ethy 1-3- ethoxypropionate, and propyl-3-methoxypropionate. Among these examples, as an ester solvent, butyl acetate or PGMEA is preferable. 

[0331] Examples of the nitrile solvents include acetoni› trile, propionitrile, valeronitrile, and butyronitrile. 

[0332] Known additives can be blended with the organic developing solution as necessary. Examples of the additive include surfactants. The surfactant is not particularly lim› ited, and for example, an ionic or non-ionic fluorine-based and/or silicon-based surfactant can be used. 

[0333] As the surfactant, a non-ionic surfactant is prefer› able, and a non-ionic fluorine-based surfactant or a non› ionic silicon-based surfactant is more preferable. 

[0334] In a case where a surfactant is blended, the amount thereof to be blended is typically in a range of0.001 % to 5% by mass, preferably in a range of0.005% to 2% by mass, and more preferably in a range of 0.01 % to 0.5% by mass with respect to the total amount of the organic developing solu› tion. 

[0335] The developing treatment can be performed by a known developing method. Examples thereof include a method of immersing a support in a developing solution for a predetermined time (a dip method), a method of stacking up a developing solution on the surface of a support using the surface tension and maintaining the state for a predeter› mined time (a puddle method), a method of spraying a developing solution to the surface of a support (a spray method), and a method of continuously ejecting a develop› ing solution from a developing solution ejecting nozzle onto a support rotating at a constant speed while scanning the developing solution ejecting nozzle at a constant rate (a dynamic dispense method). 

[0336] The rinse treatment (washing treatment) performed using a rinse liquid can be carried out according to a known rinse method. Examples of the rinse treatment method include a method of continuously ejecting a rinse liquid onto a support rotating at a constant speed ( a rotary coating method), a method of immersing a support in a rinse liquid for a predetermined time (a dip method), and a method of spraying a rinse liquid to the surface of a support (a spray method). 

[0337] In the rinse treatment, water rinse using pure water is preferable in a case of an alkali developing solution. Further, it is preferable to use a rinsing liquid containing an organic solvent in a case of an organic developing solution. 

[0338] According to the pattern forming method of the embodiment described above, since the negative type pho› tosensitive resin composition according to the first embodi› ment is used, the sensitivity is improved, and the amount of residues is decreased so that a pattern having an excellent shape and high resolution can be formed. 

[0339] (Cured Film) 

[0340] A cured film of the present embodiment is obtained by curing the negative type photosensitive resin composition according to the embodiment described above. The tensile elasticity of the cured film according to the present embodi› ment is preferably 2.0 GPa or greater and more preferably 

