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Basic Compound (Amine 1) and Crosslinkerofthe Following Structural Formulae 

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Coating Uniformity Test 

Each resist composition in Tables 1 and 2 was coated onto a 8-inch wafer and baked on a hot plate at 100° C. for 60 seconds for evaporating off the solvent. Resist films of 40 nm thick were formed in Examples 1 to 28 and Comparative Examples 1, 2, 3 and 5 to 9, and a resist film of 60 nm thick was formed in Comparative Example 4. Using an optical film thickness measuring system, the thickness of a film was mea› sured in the plane of the 8-inch wafer. With respect to coating uniformity, the film was rated OK when the difference between maximum and minimum thickness measurements was equal to or less than 2 nm, and NG when the difference exceeded 2 nm. The results are shown in Table 3. EB Writing Test 

In the patterning test, the negative resist compositions pre› pared by filtering the solutions of Tables 1 and 2 through a filter having a pore size of 0.2 µm were used, and silicon substrates having a diameter of 6 inches were vapor primed with hexamethyldisilazane (HMDS). Using a coater/devel› oper system Clean Track Mark 5 (Tokyo Electron Ltd.), the negative resist composition was spin coated onto the primed silicon substrate and prebaked on a hot plate at 110° C. for 60 seconds to form a resist film. The resist films in Examples 1 to 28 and Comparative Examples 5 to 9 had a thickness of 40 nm, and the resist film in Comparative Example 4 had a thickness of 60 nm. 

Using a system HL-800D (Hitachi, Ltd.), the resist film was irradiated imagewise with EB at a HV voltage of 50 keV in a vacuum chamber. The resist films of Comparative Examples 1, 2 and 3 were not subjected to the exposure test because the films had so poor coating uniformity that the exposure test might lack reproducibility. 

Using the system Clean Track Mark 5, immediately after the imagewise exposure, the resist film was baked (PEB) at the temperature shown in Table 3 for 60 seconds and puddle developed with a 2.38 wt% TMAH aqueous solution for 20 seconds, yielding a negative pattern. 

The pattern was evaluated as follows. Resolution was a minimum size at the exposure dose (sensitivity) that provided a 1: 1 resolution of a 100-nm line-and-space pattern. The 100-nm line-and-space pattern was measured for line width roughness (LWR) under SEM. 

Table 3 shows the results of sensitivity, resolution, and LWR of the resist compositions. 

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## TABLE 1 

