ture of 60 to 90° C., the exposure latitude (EL) and the resolution can be remarkably enhanced. 

The heating time is preferably from 30 to 300 seconds, more preferably from 30 to 180 seconds, still more preferably from 30 to 90 seconds. 

In the pattern forming method of the present invention, the step of forming a film on a substrate by using the composition, the step of exposing the film, the heating step and the devel› opment step can be performed by generally known methods. 

The light source used for exposure is an extreme ultraviolet ray (EUV light) or an electron beam (EB). 

The film formed using the composition of the present invention may be subjected to immersion exposure. By this exposure, the resolution can be more enhanced. The immer› sion medium used may be any liquid as long as it has a refractive index higher than that of air, but pure water is preferred. 

In this case, the above-described hydrophobic resin may be previously added to the composition, or after forming a film 20 as above, a topcoat may be provided thereon. The perfor› mance required of the topcoat, the use method thereof and the like are described in Ekishin Lithography no Process to Zairyo (Process and Material of Immersion Lithography), Chapter 7, CMC Shuppan. 25 

On peeling off the topcoat after exposure, a developer may be used or a releasing agent may be separately used. The releasing agent is preferably a solvent less permeating the film. From the standpoint that the peeling step can be per› formed simultaneously with the development step of the film, the topcoat is preferably peelable with a developer. 

In the present invention, the substrate on which the film is formed is not particularly limited, and a substrate generally used in the production process of a semiconductor such as IC, in the production process of a liquid crystal device or a circuit board such as thermal head or in the lithography process of other photofabrications may be used. Examples of such a substrate include an inorganic substrate such as silicon, SiN and SiO$_{2}$ , and a coating-type inorganic substrate such as SOG. If desired, an organic antireflection film may be formed between the film and the substrate. 

The organic solvent-containing developer includes, for example, a polar solvent such as ketone-based solvent, ester› based solvent, alcohol-based solvent, amide-based solvent and ether-based solvent, and a hydrocarbon-based solvent. 

Examples of the ketone-based solvent include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 4-heptanone, 1-hexanone, 2-hexanone, diisobutyl ketone, cyclohexanone, methylcyclohexanone, phenylacetone, methyl ethyl ketone, methyl isobutyl ketone, methyl amyl ketone, acetyl acetone, acetonyl acetone, ionone, diacetonyl alcohol, acetyl carbinol, acetophenone, methyl naphthyl ketone, isophorone and pro› pylene carbonate. 

Examples of the ester-based solvent include methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, amyl 55 acetate, isoamyl acetate, n-pentyl acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol mono butyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3-ethoxypropionate, 3-methoxybutyl 60 acetate, 3-methyl-3-methoxybutyl acetate, methyl formate, ethyl formate, butyl formate, propyl formate, ethyl lactate, butyl lactate, propyl lactate, methyl propionate, methyl 3-methoxypropionate (MMP), ethyl propionate, ethyl 3-ethoxypropionate (EEP) and propyl propionate. Among 65 these, an alkyl acetate such as methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate and amyl acetate, and an alkyl 

propionate such as methyl propionate, ethyl propionate and propyl propionate are preferred. 

Examples of the alcohol-based solvent include an alcohol such as methyl alcohol, ethyl alcohol, n-propyl alcohol, iso- propyl alcohol, n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, isobutyl alcohol, n-hexyl alcohol, 4-methyl-2-pen› tanol, n-heptyl alcohol, n-octyl alcohol and n-decanol; a gly› col such as ethylene glycol, diethylene glycol and triethylene glycol; and a glycol ether such as ethylene glycol monom- ethyl ether, propylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monoethyl ether, diethylene glycol monomethyl ether, triethylene glycol monoethyl ether and methoxymethyl butanol. 

Examples of the ether-based solvent include, in addition to the glycol ether above, dioxane and tetrahydrofuran. 

Examples of the amide-based solvent include N-methyl-2- pyrrolidone, N,N-dimethylacetamide, N,N-dimethylforma› mide, hexamethylphosphoric triamide and 1,3-dimethyl-2- imidazolidinone. 

Examples of the hydrocarbon-based solvent include an aromatic hydrocarbon-based solvent such as toluene and xylene, and an aliphatic hydrocarbon-based solvent such as pentane, hexane, octane and decane. 

Two or more kinds of these solvents may be mixed and used, or as long as sufficient performance can be exerted, the solvent may be used by mixing it with a solvent other than those described above and/or water. However, the percentage of water content of the entire developer is preferably less than 10 mass%, and it is more preferred to contain substantially no water. In other words, this developer is preferably a developer composed of substantially only an organic solvent. Even in this case, the developer may contain the later-described sur› factant. Also, in this case, the developer may contain unavoid- able impurities derived from the atmosphere. 

The amount of the organic solvent used in the developer is preferably from 80 to 100 mass %, more preferably from 90 to 100 mass %, still more preferably from 95 to 100 mass %, based on the entire amount of the developer. 

In particular, the organic solvent contained in the developer is preferably at least one solvent selected from a ketone-based solvent, an ester-based solvent, an alcohol-based solvent, an amide-based solvent and an ether-based solvent. 

The vapor pressure at 20° C. of the organic solvent-con› taining developer is preferably 5 kPa or less, more preferably 3 kPa or less, still more preferably 2 kPa or less. By setting the vapor pressure of the developer to 5 kPa or less, evaporation of the developer on a substrate or in a development cup is suppressed and the temperature uniformity in the wafer plane is enhanced, as a result, the dimensional uniformity in the wafer plane is improved. 

Specific examples of the developer having a vapor pressure of 5 kPa or less include a ketone-based solvent such as 1-oc› tanone, 2-octanone, 1-nonanone, 2-nonanone, 4-heptanone, 2-hexanone, diisobutyl ketone, cyclohexanone, methylcyclo› hexanone, phenylacetone and methyl isobutyl ketone; an ester-based solvent such as butyl acetate, amyl acetate, pro- pylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3- ethoxypropionate, 3-methoxybutyl acetate, 3-methyl-3- methoxybutyl acetate, butyl formate, propyl formate, ethyl lactate, butyl lactate and propyl lactate; an alcohol-based solvent such as n-propyl alcohol, isopropyl alcohol, n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, isobutyl alco› hol, n-hexyl alcohol, 4-methyl-2-pentanol, n-heptyl alcohol, n-octyl alcohol and n-decanol; a glycol-based solvent such as ethylene glycol, diethylene glycol and triethylene glycol; a 

