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surfactant, a filler, a pigment, an antistatic agent, a flame retardant, a light stabilizer, an antioxidant, an ion scavenger and a solvent. 

The fluorine-containing water-repellent polymer includes that commonly used in an immersion exposure process. A fluorine atom content of the fluorine-containing water-re› pellent polymer is preferably higher than that of the above mentioned polymer. Thereby, when a resist film is formed by using the resist composition, the fluorine-containing water› repellent polymer can be localized to a surface of the resist film due to water repellency of the fluorine-containing water-repellent polymer. 

## <3> Method for Preparing the Resist Composition 

A method for preparing the resist composition in an embodiment of the present invention is not limited, and the resist composition may be prepared by a known method such as mixing, dissolving or kneading the polymer and other optional components. 

The polymer may be synthesized by proper polymerizing of the monomers constituting the unit A and the unit B, and if necessary, the monomers constituting other units, accord› ing to a usual method. However, the method for preparing the polymer of the present invention is not limited thereto. <4> Method for Manufacturing Device 

An embodiment of the present invention is a method for manufacturing a device, comprising: a resist film forming step of forming the resist film on a substrate using the resist composition; a photolithography step of exposing the resist film to the particle beam or the electromagnetic wave; and a pattern forming step of developing an exposed resist film to obtain a photoresist pattern. 

Examples of the particle beam or the electromagnetic wave used for exposure in the photolithography step include an electron beam and EUV, respectively. 

The exposure dose is, depending on a type and content of each component in the photocurable composition, and the film thickness of the coating film and the like, preferably 1 J/cm 2 or less or 1000 µC/cm 2 or less. 

When the resist composition comprises the sensitizer unit (the unit C) in the polymer or the sensitizer compound, a second exposure to an ultraviolet ray or the like is preferably performed after irradiation with the particle beam or the electromagnetic wave. 

Hereinafter, some embodiments of the present invention will be described in more detail by examples, but the present invention is not limited by these examples. 

## <Synthesis of Compound Al Constituting Unit A> 

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## (Synthesis Example 1) Synthesis of dibenzothiophene-9-oxide 

## EXAMPLES 

7.0 g of dibenzothiophene is dissolved in 21.0 g of formic acid and set to 35° C. 4.1 g of 35% by mass of aqueous hydrogen peroxide is added dropwise thereto and the mix› ture is stirred at 25° C. for 5 hours. After cooling, the reaction solution is added dropwise to 50 g of pure water to precipitate. The precipitated solid is filtered, washed twice with 20 g of pure water, and then recrystallized using acetone. After filtration and drying, 7.6 g of dibenzothio› phene-9-oxide is obtained. 

## (Synthesis Example 2) Synthesis of 9-(4-hydroxy› phenyl)dibenzothiophenium-trifluoromethanesul› fonate 

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4.0 g of dibenzothiophene-9-oxide obtained in Synthesis Example 1 and 2.8 g of phenol are dissolved in 19 g of methanesulfonic acid and set to 25° C. 1.5 g of diphospho› rous pentoxide is added thereto and the mixture is stirred at room temperature for 15 hours. Thereafter, 60 g of pure water is added thereto, the mixture is stirred for further 5 minutes, and then washed twice with 20 g of ethyl acetate. After phase separation, and 3.9 g of potassium trifluo› romethanesulfonate and 30 g of methylene chloride are added to the obtained aqueous layer, and the mixture is stirred at room temperature for 2 hours. Thereafter, phase separation is performed, and the obtained organic layer is washed four times with 40 g of pure water. The combined organic layer is concentrated and added dropwise to 100 g of diisopropyl ether to precipitate a solid. The precipitated solid is filtered and dried to obtain 5.6 g of 9-( 4-hydroxy› phenyl)dibenzothiophenium-trifluoromethanesulfonate. 

