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## EB Writing Test 

## Examples 2-1 to 2-5 and Comparative Examples 2-1 to 2-2 

Each of the resist compositions in Table 2 was spin coated onto a silicon substrate, which had been vapor primed with hexamethyldisilazane (HMDS), and pre-baked on a hot plate at 110° C. for 60 seconds to form a resist film of 80 nm thick. Using a system HL-S00D (Hitachi Ltd.) at an accelerating 

voltage of 50 kV, the resist film was exposed imagewise to EB in a vacuum chamber. Immediately after the image writing, the resist film was baked (PEB) on a hot plate at 90° C. for 60 seconds and developed in a 2.38 wt % TMAH aqueous solution for 30 seconds to form a pattern. The resist pattern was evaluated as follows. 

<img src='content_image/896216.jpg'>

In the case of positive resist film, the resolution is a minimum trench size at the exposure dose that provides a resolution as designed of a 120-nm trench pattern. In the case of negative resist film, the resolution is a minimum isolated line size at the exposure dose that provides a resolution as designed of a 120-nm isolated line pattern. It is noted that Examples 2-1 to 2-4 and Comparative Examples 2-1 to 2-2 are positive resist compositions, and Example 2-5 is a negative resist composition. 

The results are shown in Table 2. 

It is demonstrated in Tables 1 and 2 that resist composi› tions comprising a sulfonium or iodonium salt of sulfonic acid containing a morpholino group offer dimensional sta- bility on PPD and a satisfactory resolution. 

Japanese Patent Application No. 2015-205402 is incor› porated herein by reference. 

