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# c12) United States Patent Hatakeyama 

# (54) RESIST COMPOSITION AND PATTERNING PROCESS 

(71) Applicant: Shin-Etsu Chemical Co., Ltd., Tokyo (JP) 

(72) Inventor: Jun Hatakeyama, Joetsu (JP) 

(73) Assignee: SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP) 

( *) Notice: Subject to any disclaimer, the term ofthis patent is extended or adjusted under 35 U.S.C. 154(b) by 0 days. 

(21) Appl. No.: 15/016,920 

Feb. 5, 2016 (22) Filed: 

## (65) Prior Publication Data 

US 2016/0231652 Al Aug. 11, 2016 

## (30) Foreign Application Priority Data 

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(51) Int. Cl. 

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(52) U.S. Cl. CPC .......... G03F 710397 (2013.01); G03F 710045 (2013.01); G03F 710046 (2013.01); G03F 710392 (2013.01); G03F 712004 (2013.01); G03F 712059 (2013.01); YJ0S 522/904 (2013.01) 

( 58) Field of Classification Search CPC .... G03F 7/0397; G03F 7/2004; G03F 7/2059; G03F 7/0392; G03F 7/0045; G03F 7/0046; Yl0S 522/904 

See application file for complete search history. 

## (56) References Cited 

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## U.S. PATENT DOCUMENTS 

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# (IO) Patent No.: US 9,869,931 B2 

# (45) Date of Patent: Jan.16,2018 

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Hinsberg et al., "Extendibility of Chemically Amplified Resists : Another Brick Wall?", Advances in Resist Technology and Process› ing XX, 2003, Proceedings of SPIE vol. 5039, pp. 1-14, (14 pages). Kishikawa et al., "Assessment of trade-off between resist resolution and sensitivity for optimization of hyper-NA immersion lithogra› phy", Optical Mlcrolfthography XX, 2007, Proceedings of SPIE vol. 6520, pp. 65203L-l-65203L-9, (10 pages). 

Office Action dated Oct. 13, 2016, issued in counterpart Taiwanese application No. 105103904 (6 pages). 

* cited by examiner 

Primary Examiner - Cynthia Hamilton 

(74) Attorney, Agent, or Firm - Westerman, Hattori, Daniels & Adrian, LLP 

## (57) ABSTRACT 

To a resist composition comprising a polymer comprising recurring units having an acid labile group and an acid generator is added a metal-acid complex. The metal is Ce, Cu, Zn, Fe, In, Y, Yb, Sn, Tm, Sc, Ni, Nd, Hf, Zr, Ti, La, Ag, Ba, Ho, Tb, Lu, Eu, Dy, Gd, Rb, Sr or Cs. The acid is a fluoroalkylsulfonic acid, fluorinated arylsulfonic acid, fluo› rinated tetraphenylboric acid, fluoroalkylsulfonimidic acid or fluoroalkylsulfonemethide acid. Due to a high contrast of alkaline dissolution rate before and after exposure, high resolution, high sensitivity, and controlled acid diffusion rate, the composition forms a pattern with satisfactory profile and minimal line edge roughness. 

US009869931B2 

## FOREIGN PATENT DOCUMENTS 

## OTHER PUBLICATIONS 

## 14 Claims, No Drawings 

