[0001] This application is a Continuation of PCT Interna› tional Application No. PCT/JP2014/80906, filed on Nov. 21, 2014, which claims priority under 35 U.S.C. §119(a) to Japa› nese Patent Application No. 2013-248158, filed on Nov. 29, 2013 and Japanese Patent Application No. 2014-234297, filed on Nov. 19, 2014. Each of the above application(s) is hereby expressly incorporated by reference, in its entirety, into the present application. 

[0002] 1. Field of the Invention 

[0003] The present invention relates to an active light-sen› sitive or radiation-sensitive resin composition, and a pattern forming method using the same. More specifically, the present invention relates to an active light-sensitive or radia› tion-sensitive resin composition which is used for a process for manufacturing a semiconductor such as an IC, for the manufacture of liquid crystals and a circuit board for a ther› mal head or the like, or other photo fabrication processes, or in a lithographic printing plate or an acid-curable composition; and a pattern forming method using the same. 

[0004] 2. Description of the Related Art 

[0005] A chemical amplification type resist composition is a pattern forming material that forms a pattern on a substrate by producing an acid in the exposed area upon irradiation with radiation such as far ultraviolet light, and changing the solubility of the area irradiated with active radiation and the non-irradiated area with respect to a developer by a reaction using the acid as a catalyst. 

[0006] For example, JP2013-210636A discloses an active light-sensitive or radiation-sensitive resin composition including "a resin (A) capable of increasing the solubility in an alkali developer by the action of an acid and a compound (B) capable of generating an acid upon irradiation with active light or radiation; and further including a low-molecular com› pound (D) having a group leaving by the action of an acid, in which the compound (B) capable of generating an acid upon irradiation with active light or radiation is included in the proportion of 10% by mass to 30% by mass with respect to the total solid content of the active light-sensitive or radiation› sensitive resin composition, and in which the component (A) does not have an aromatic group" (claim 1). 

[0007] On the other hand, in recent years, high functional› ity of various electronic devices has been required, and cor› respondingly, a further improvement of the characteristics of a resist pattern used for micro fabrication has been required. In particular, a further improvement in a depth of focus (DOF) and an exposure latitude (EL) have been required. 

[0008] Among these, the present inventors have investi› gated the composition described in JP2013-210636A, and as a result, it has been found that the DOF and the EL do not necessarily satisfy the recently required levels. 

[0009] Therefore, taking into consideration of these situa› tions, the present invention has an object to provide an active 

## ACTIVE LIGHTRAY-SENSITIVE OR RADIATION-SENSITIVE RESIN 

## COMPOSITION AND PATTERN FORMING METHOD 

## CROSS-REFERENCE TO RELATED APPLICATIONS 

## BACKGROUND OF THE INVENTION 

## SUMMARY OF THE INVENTION 

light-sensitive or radiation-sensitive resin composition hav› ing a high depth of focus (DOF) and a high exposure latitude (EL), and a pattern forming method using the same. 

[0010] The present inventors have conducted extensive studies on the problems, and as a result, they have found that the DOF and the EL are improved by incorporating a com› pound having at least one oxygen atom, thereby reaching the present invention. 

[0011] That is, the present inventors have found that the problems can be solved by the following configurations. 

[0012] (1) An active light-sensitive or radiation-sensitive resin composition containing: 

[0013] a resin (A), 

[0014] a compound (B) capable of generating an acid upon irradiation with active light or radiation, and 

[0015] a compound (C) having at least one oxygen atom, 

[0016] in which the resin (A) and the compound (B) are not included in the compound (C). 

[0017] (2) The active light-sensitive or radiation-sensitive resin composition as described in (1 ), in which the molecular weight of the compound (C) is from 150 to 3,000. 

[0018] (3) The active light-sensitive or radiation-sensitive resin composition as described in (1) or (2), in which the compound (C) is a compound having two or more groups or bonds selected from the group consisting of an ether bond, a hydroxyl group, an ester bond, and a ketone bond. 

[0019] ( 4) The active light-sensitive or radiation-sensitive resin composition as described in (3 ), in which the compound (C) is a compound having three or more groups or bonds selected from the group consisting of an ether bond, a hydroxyl group, an ester bond, and a ketone bond. 

[0020] (5) The active light-sensitive or radiation-sensitive resin composition as described in ( 4 ), in which the compound (C) is a compound having four or more groups or bonds selected from the group consisting of an ether bond, a hydroxyl group, an ester bond, and a ketone bond. 

[0021] (6) The active light-sensitive or radiation-sensitive resin composition as described in (3 ), in which the compound (C) is a compound having two or more ether bonds. 

[0022] (7) The active light-sensitive or radiation-sensitive resin composition as described in any one of (1) to (6), in which the boiling point of the compound (C) is 200° C. or higher. 

[0023] (8) The active light-sensitive or radiation-sensitive resin composition as described in any one of (1) to (7), in which the content of the compound (C) is 30 parts by mass or less with respect to 100 parts by mass of the resin (A). 

[0024] (9) The active light-sensitive or radiation-sensitive resin composition as described in any one of (1) to (8), further including an acid diffusion control agent (D). 

[0025] (10) The active light-sensitive or radiation-sensitive resin composition as described in any one of (1) to (9), in which the compound (C) has a partial structure represented by General Formula (1), which will be described later. 

[0026] (11) A pattern forming method including: 

[0027] [ 1] a step of forming a resist film on a substrate using the active light-sensitive or radiation-sensitive resin compo› sition as described in any one of (1) to (10), 

[0028] [2] a step of exposing the resist film, and 

[0029] [3] a step of developing the exposed resist film using a developer containing an organic solvent to form a resist pattern. 

[0030] As described below, according to the present inven› tion, it is possible to provide an active light-sensitive or radia- 

