content_image/907610.jpg
wherein R 21 , R 25 , and R $^{29 }$represent a hydrogen atom or a methyl group; R 22 represents a single bond, a phenylene group, ---O-R 33 -, or -C(=0)-Y-R 33 -, where Y represents an oxygen atom or NH and R 33 represents a linear, branched, or cyclic alkylene group having 1 to 6 carbon atoms, an alkenylene group, or a phenylene group in which these groups may contain a carbonyl group, an ester group, an ether group, or a hydroxyl group; R 23 , R 24 , R 26 , R 27 , R 28 , R 30 , R 31 , and R $^{32 }$may be the same or different and represent a linear, branched, or cyclic alkyl group having 1 to 12 carbon atoms and optionally containing a carbonyl group, an ester group, or an ether group, an aryl group having 6 to 12 carbon atoms, an aralkyl group having 7 to 20 carbon atoms, or a thiophenyl group; Z 3 represents a single bond, a methylene group, an ethylene group, a phe› nylene group, a fluorinated phenylene group, ---O-R 34 -, -C(=0)---0-R 34 -, or -C(=0)-NH-R 34 -, where R$^{34 }$represents a linear, branched, or cyclic alkylene group having 1 to 6 carbon atoms, an alkenylene group, or a phenylene group, in which these groups may contain a carbonyl group, an ester group, an ether group, or a hydroxyl group; M- represents a non-nucleophilic counter ion; and dl, d2, and d3 satisfy 0sdls0.3, 0sd2s0.3, 0sd3s0.3, and 0<dl +d2+d3s0.3. 

8. The resist composition according to claim 1, further comprising either or both of a basic compound and a surfactant as an additive(s). 

<img src='content_image/907610.jpg'>

9. A patterning process comprising the steps of applying the resist composition according to claim 1 on a substrate; performing exposure with a high energy beam after heat treatment; and performing development with a developer. 

10. The patterning process according to claim 9, wherein the developer used in the patterning process is one or more of 2-octanone, 2-nonanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-hexanone, 3-hexanone, diisobutylketone, methylcyclohexanone, acetophenone, methylacetophenone, propyl acetate, butyl acetate, isobutyl acetate, amyl acetate, butenyl acetate, isoamyl acetate, propyl formate, butyl for› mate, isobutyl formate, amyl formate, isoamyl formate, methyl valerate, methyl pentenoate, methyl crotonate, ethyl crotonate, methyl propionate, ethyl propionate, ethyl 3-ethoxypropionate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, isobutyl lactate, amyl lactate, isoamyl lactate, methyl 2-hydroxyisobutyrate, ethyl 2-hydroxyisobu› tyrate, methyl benzoate, ethyl benzoate, phenyl acetate, benzyl acetate, methyl phenylacetate, benzyl formate, phe› nylethyl formate, methyl 3-phenylpropionate, benzyl propi- onate, ethyl phenylacetate, and 2-phenylethyl acetate, and a negative pattern is formed by the development. 

11. The patterning process according to claim 9, wherein the developer used in the patterning process is an alkali aqueous solution, and a positive pattern is formed by the development. 

12. The patterning process according to claim 9, wherein the high energy beam is an i-beam with a wavelength of364 nm, a KrF excimer laser beam with a wavelength of 248 nm, an ArF excimer laser beam with a wavelength of 193 nm, an EUV lithography with a wavelength of 13.5 nm, or an electron beam. 

13. The patterning process according to claim 9, further comprising post exposure baking under a condition that a moisture content is 10 g or more per kilogram of dry air, before the development. 

* * * * * 

