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EUV Lithography Test 

[0168] Each of the resist compositions in Tables 1 to 3 was spin coated on a silicon substrate having a 20-nm coating of 

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silicon-containing spin-on hard mask SHB-A940 (Shin-Etsu Chemical Co., Ltd., silicon content 43 wt%) and prebaked on a hotplate at 105° C. for 60 seconds to form a resist film of 50 nm thick Using an EUV scanner NXE3300 (ASML, NA 0.33, a 0.9/0.6, quadrupole illumination), the resist film was exposed to EUV in a dose of 20 to 40 mJ/cm 2 through a mask bearing a hole pattern at a pitch 46 nm (on-wafer size) and +20% bias. The resist film was baked (PEB) on a hotplate at the temperature shown in Tables 1 to 3 for 60 seconds and developed in a 2.38 wt % TMAH aqueous solution for 30 seconds to form a hole pattern having a size of 23 nm in Examples 1 to 33 and Comparative Examples 1 to 5 or a dot pattern having a size of 23 nm in Example 34 and Comparative Example 6. 

[0169] The resist pattern was observed under CD-SEM (CG-5000, Hitachi High-Technologies Corp.). The exposure dose that provides a hole or dot pattern having a size of 23 nm is reported as sensitivity. The size of 50 holes or dots was measured, from which a size variation (3a) was computed and reported as CDU. 

[0170] The resist composition is shown in Tables 1 to 3 together with the sensitivity and CDU of EUV lithography. 

