[0139] After the step of developing using the developer including an organic solvent, more preferably, a step of wash› ing using a rinse liquid containing at least one type of organic solvent selected from a ketone-based solvent, an ester-based solvent, an alcohol-based solvent, and an amide-based sol› vent is performed, still more preferably, a step of washing using a rinse liquid containing an alcohol-based solvent or an ester-based solvent is performed, particularly preferably, a step of washing using a rinse liquid containing a monohydric alcohol is performed, and most preferably, a step of washing using a rinse liquid containing a monohydric alcohol having 5 or more carbon atoms is performed. 

[0140] As the monohydric alcohol used in the rinsing step, a linear, branched, or cyclic monohydric alcohol is exempli› fied, and specifically, 1-butanol, 2-butanol, 3-methyl-1-bu› tanol, tert-butyl alcohol, 1-pentanol, 2-pentanol, 1-hexanol, 4-methyl-2-pentanol, 1-heptanol, 1-octanol, 2-hexanol, cyclopentanol, 2-heptanol, 2-octanol, 3-hexanol, 3-heptanol, 3-octanol, or 4-octanol can be used, and as particularly pref› erable monohydric alcohol having 5 or more carbon atoms, 1-hexanol, 2-hexanol, 4-methyl-2-pentanol, 1-pentanol, or 3-methyl-1-butanol can be used. 

[0141] A plurality of the respective components described above may be used in combination, or the respective compo› nents may be used in combination with an organic solvent other than the organic solvents described above. 

[0142] The water content in the rinse liquid is preferably 10% by mass or less, more preferably 5% by mass or less, and particularly preferably 3% by mass or less. When the water content is 10% by mass or less, good development character› istics can be obtained. 

[0143] The vapor pressure of the rinse liquid used after the step of developing using a developer including an organic solvent is preferably 0.05 kPa to 5 kPa, more preferably 0.1 kPa to 5 kPa, and most preferably 0.12 kPa to 3 kPa, at 20° C. When the vapor pressure of the rinse liquid is 0.05 kPa to 5 kPa, the temperature evenness in the wafer surface is improved, swelling due to penetration of the rinse liquid is suppressed, and the dimensional evenness in the wafer sur› face is improved. 

[0144] A suitable amount of surfactant can also be added to the rinse liquid for use. 

[0145] In the rinsing step, the wafer developed by using a developer including an organic solvent is subjected to a wash› ing treatment using the rinse liquid including an organic solvent described above. The method of washing treatment is not particularly limited, and, for example, a method in which a rinse liquid is discharged continuously onto a substrate while the substrate is rotated at a constant rate (spin coating method), a method in which a substrate is dipped in a bath filled with a rinse liquid for a predetermined period of time ( dipping method), or a method in which a rinse liquid is sprayed onto a substrate surface (spray method) can be suit› ably used, and among these, it is preferable that a washing treatment is performed by the spin coating method, and, after washing, a rinse liquid is removed from the substrate by rotating the substrate at a rotation speed of 2000 rpm to 4000 rpm. In addition, a heating step (post bake) is also preferably included after the rinsing step. By baking, the developer and the rinse liquid remaining between the patterns and in the patterns are removed. The heating step after the rinsing step is performed typically 40° C. to 160° C., and preferably 70° C. to 95° C., and typically for 10 seconds to 3 minutes, and preferably 30 seconds to 90 seconds. 

[0146] In addition, the present invention also relates to a method for manufacturing an electronic device including the pattern forming method and the method for forming a pat› terned mask of the present invention described above, and an electronic device manufactured by the manufacturing method. 

[0147] The electronic device of the present invention is suitably mounted on electrical and electronic equipment (home electric appliances, OA and media-related equipment, optical equipment, communication equipment, or the like). 

[0148] Next, the active light-sensitive or radiation-sensitive resin composition suitably used in the pattern forming method and the method for forming a patterned mask of the present invention will be described in detail. 

[0149] The active light-sensitive or radiation-sensitive resin composition of the present invention contains (A) a resin having a repeating unit having a group that generates a polar group by being decomposed due to the action of an acid and (B) a compound that generates an acid by irradiation with active light or radiation. 

[0150] [(A) Resin Having Repeating Unit Group Having Group that Generates Polar Group by being Decomposed Due to Action of Acid] 

[0151] The active light-sensitive or radiation-sensitive resin composition of the present invention contains a resin having a repeating unit having a group that generates a polar group by being decomposed due to the action of an acid (hereinafter, also referred to as an "acid decomposable resin" or a "resin (A)"). 

[0152] The resin (A) is preferably insoluble or poorly soluble in an alkali developer, and is soluble in a developer including an organic solvent. 

[0153] The group that generates a polar group by being decomposed due to the action of an acid (hereinafter, also referred to as an "acid-decomposable group") preferably has a structure in which the polar group is protected with a group leaving by being decomposed due to the action of an acid. 

[0154] The resin (A) is also a resin of which the polarity is changed due to the action of an acid, and specifically, is also a resin of which the solubility in alkali developers is increased due to the action of an acid, or of which the solubility in developers containing an organic solvent is decreased. 

[0155] Examples of the polar group include a phenolic hydroxyl group, a carboxyl group, a fluorinated alcohol group, a sulfonic acid group, a sulfonamide group, a sulfonyl imide group, an (alkylsulfonyl)(alkylcarbonyl)methylene group, an (alkylsulfonyl)(alkylcarbonyl)imide group, a bis (alkylcarbonyl)methylene group, a bis(alkylcarbonyl)imide group, a bis(alkylsulfonyl)methylene group, a bis(alkylsulfo› nyl)imide group, a tris(alkylcarbonyl)methylene group, and a tris(alkylsulfonyl)methylene group. 

[0156] Examples of a preferable polar group include a car› boxyl group, a fluorinated alcohol group (preferably, a hexafluoroisopropanol group), and a sulfonic acid group. 

[0157] The preferable acid-decomposable group is a group in which a hydrogen atom of the polar group thereof is sub› stituted with a group leaving due to an acid. 

[0158] Examples of the group leaving due to an acid include ----C(R 36 )(R 37 )(R 38 ), ----C(R 36 )(R 37 )(OR 39 ), and ----C(Ro1)(Ro2)(OR39)- 

[0159] In the formula, each of R 36 to R 39 independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or an alkenyl group. R 36 and R 37 may be bonded to each other to form a ring. 

