After preparing the film and before the exposing, a prebake process (PB; Prebake) is also preferably included. 

In addition, after the exposing and before the developing, heating (PEB; Post Exposure Bake) is also preferably included. 

Regarding the heating temperature, heating of any of PB and PEB is preferably at a temperature of 70 to 130° C., and more preferably at a temperature of 80 to 120° C. 

The heating time is preferably 30 to 300 seconds, more preferably 30 to 180 seconds, and still more preferably 30 to 90 seconds. 

Heating may be carried out by a unit included in a normal exposure/development apparatus, and may also be carried out using a hot plate or the like. 

By the baking, the reaction of the exposed portion is accelerated and the sensitivity or pattern profile is improved. 

Examples of the wavelength of the light source used in the exposure apparatus of the invention include a KrF excimer laser (248 nm), an EUV (13 nm), an electron beam, or the like, and a KrF excimer laser is preferred. 

In the invention, the substrate on which the film is formed is not particularly limited, and a substrate generally used for lithography in the production of a semiconductor device such as an IC, a liquid crystal device or a circuit board such as a thermal head and further in other photo-fabrication processes, such as an inorganic substrate, for example, silicon, SiN, SiO$_{2}$ , and SiN and a coating-type inorganic substrate, for example, SOG, can be used. 

The pattern forming method of the invention can use an uneven substrate as the substrate in the fine processing such 30 as usage in ion implantation, for example. 

For example, in a case of fine processing such as usage in ion implantation, a substrate in which fins and gates are patterned on a flat substrate can be used as the uneven substrate. The film thickness of the resist film coated with the actinic ray-sensitive or radiation-sensitive resin compo› sition and formed on the uneven substrate patterned with fins and gates in this manner refers to the height from the bottom surface on the uneven substrate as described above to the top surface of the formed resist film, not to the height from the upper surface of the fins or gates to the upper surface of the formed resist film. 

As the size (width, length, height, or the like), spacing, structure, configuration, or the like, of the fins and gates, for example, the ones described in pages 25 to 29 of "Cutting› edge FinFET processing and integration technology" Jour› nal of the institute of Electronics, Information and Commu› nication Engineers Vol. 91 No. 1 2008, or Jpn. J. Appl. Phys. Vol. 42 (2003) pp. 4142-4146 Part 1 No. 6B June 2003 "Fin-Type Double-Gate Metal-Oxide-Semiconductor Field› Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography" can be appropri› ately applied. 

The pattern forming method of the invention does not require an antireflection film from the viewpoint of achiev› ing the effect of the invention; however, an organic antire› flection film may be formed between the film and the substrate as necessary. 

For example, the antireflection film may be provided at the lower layer of the resist. The antireflection film used may be either an inorganic film type such as titanium, titanium dioxide, titanium nitride, chromium oxide, carbon or amor› phous silicon, or an organic film type formed of a light absorber and a polymer material. In the former case, the provision of a vacuum deposition apparatus, a CVD appa- ratus, a sputtering apparatus, or the like is necessary in the film forming. As the organic antireflection film, examples 

include ones formed of a condensate of a diphenylamine derivative and a formaldehyde modified melamine resin, an alkali-soluble resin, and a light-absorbing agent described in JP1995-69611B (JP-H07-69611B); a reactant of a maleic anhydride copolymer and a diamine type light-absorbing agent described in U.S. Pat. No. 5,294,680A; ones contain› ing a resin binder and a methylol melamine-based heat cross-linking agent described in JP1994-118631A (JP-H06- 118631A); an acrylic resin-type antireflection film having a carboxylic acid group, an epoxy group, and a light-absorb› ing group in the same molecule described in JP1994- 118656A (JP-H06-118656A); ones formed of methylol melamine and a benzophenone-based light-absorbing agent described in JP! 996-8711 SA (JP-H08-87115A); and ones in which a low molecular weight light-absorbing agent is attached to a polyvinyl alcohol resin described in JP1996- 179509A (JP-H08-l 79509A); 

In addition, as the organic antireflection film, a commer- cially available organic antireflection film such as DUV30 Series and DUV-40 Series manufactured by Brewer Science, Inc. and AR-2, AR-3 and AR-5 manufactured by Shipley Co., Ltd. can also be used. 

In addition, as necessary, the antireflection film can be used on the upper layer of the resist. 

Examples of the antireflection film include AQUATAR-II, AQUATAR-III, AQUATAR-VII, and the like manufactured by AZ Electronic Materials Corp. 

As the developer (hereinafter also referred to as an organic developer) in the development with a developer including an organic solvent in the pattern forming method of the invention, a polar solvent such as a ketone-based solvent, an ester-based solvent, an alcohol-based solvent, an amide-based solvent, and an ether-based solvent, or a hydro- carbon-based solvent may be used. 

Examples of the ketone-based solvent include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 2-heptanone (methyl amyl ketone), 4-heptanone, 1-hexanone, 2-hexanone, diisobutyl ketone, cyclohexanone, methylcy- clohexanone, phenyl acetone, methylethyl ketone, methyl isobutyl ketone, acetylacetone, acetonylacetone, ionone, diacetonyl alcohol, acetylcarbinol, acetophenone, methyl naphthyl ketone, isophorone, and propylene carbonate. 

Examples of the ester-based solvent include methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, pentyl acetate, isopentyl acetate, amyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethyl› ene glycol monoethyl ether acetate, ethyl-3-ethoxypropi- onate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, methyl formate, ethyl formate, butyl formate, propyl formate, ethyl lactate, butyl lactate, and propyl lactate. 

Examples of the alcohol-based solvent include alcohols such as methyl alcohol, ethyl alcohol, n-propyl alcohol, isopropyl alcohol, n-butyl alcohol, sec-butyl alcohol, tert› butyl alcohol, isobutyl alcohol, n-hexyl alcohol, n-heptyl alcohol, n-octyl alcohol and n-decanol; glycol-based sol› vents such as ethylene glycol, diethylene glycol, and trieth› ylene glycol; and glycol ether-based solvents such as eth- ylene glycol monomethyl ether, propylene glycol monomethyl ether, ethylene glycol monoethyl ether, propyl› ene glycol monoethyl ether, diethylene glycol monomethyl ether, triethylene glycol monoethyl ether, and methoxym- ethyl butanol. 

Examples of the ether-based solvent include, in addition to the glycol ether-based solvents above, dioxane, and tetrahydrofuran. 

