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wherein, in Chemical Formula 3 to Chemical Formula 4, 

R 1 is selected from a substituted or unsubstituted Cl to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 benzyl group, and-Rc-O-Rd, wherein Rc is a substituted or unsubstituted Cl to C20 alkylene group and Rd is a substituted or unsubstituted Cl to C20 alkyl group, 

R$^{33 }$are each independently selected from a substituted or unsubstituted Cl to Cl0 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to CS alkenyl group, a substituted or unsubstituted C2 to CS alkynyl group, and a substi› tuted or unsubstituted C6 to C30 arylalkyl group, and 

R 22 , R 23 , R 24 , R 32 , and R 34 are each independently selected from hydrogen, a substituted or unsubstituted Cl to Cl0 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubsti› tuted C2 to CS alkenyl group, a substituted or unsub› stituted C2 to CS alkynyl group, and a substituted or unsubstituted C6 to C30 arylalkyl group. 

7. The semiconductor resist composition of claim 5, wherein R $^{1 }$is selected from a substituted or unsubstituted Cl to Cl 0 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C3 to C20 alkenyl group, a substituted or unsubstituted C3 to C20 alkynyl group, and -Rc-0-Rd, wherein Rc is a substi› tuted or unsubstituted Cl to C20 alkylene group and Rd is a substituted or unsubstituted Cl to C20 alkyl group. 

8. The semiconductor resist composition of claim 1, wherein the composition further comprises an additive selected from a surfactant, a cross-linking agent, a leveling agent, and combinations thereof. 

9. The semiconductor resist composition of claim 8, wherein the surfactant is selected from an alkyl benzene sulfonate salt, an alkyl pyridinium salt, polyethylene glycol, a quaternary ammonium salt, and combinations thereof. 

10. The semiconductor resist composition of claim 8, wherein the cross-linking agent is a melamine-based, sub› stituted urea-based, or a polymer-based cross-linking agent. 

11. The semiconductor resist composition of claim 1, further comprising a silane coupling agent as an adherence enhancer. 

12. The semiconductor resist composition of claim 1, wherein the organometallic compound is represented by at least one of Chemical Formula 5 to Chemical Formula 13: 

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