content_image/886661.jpg content_image/886662.jpg
A coating solution composition having a solid content concentration of 2.5 mass % according to the formulation shown in Table 5 below was microfiltered through a mem› brane filter having a pore size of0.05 µm to obtain an actinic ray-sensitive or radiation-sensitive resin composition (resist composition) solution. 

This actinic ray-sensitive or radiation-sensitive resin com› position was coated on a 6-inch Si wafer previously sub› jected to a hexamethyldisilazane (HMDS) treatment, by using a spin coater, Mark 8, manufactured by Tokyo Elec- tron Ltd. and dried on a hot plate at 100° C. for 60 seconds to obtain a resist film having a thickness of 50 nm. 

Incidentally, with respect to Examples 3-60 to 3-63, the following evaluations were performed by further incorpo› rating a hydrophobic resin (HR) as shown in Table 4 below. The polymer structure of each hydrophobic resin (HR) is as illustrated above as specific examples. Also, in the Table below, the compositional ratio corresponds to the composi› tional ratio (mo! % ) of respective repeating units starting from the left in each polymer structure illustrated above. 

<img src='content_image/886661.jpg'>

(6) EUV Exposure and Development 

The resist film-coated wafer obtained in (5) above was patternwise exposed through an exposure mask (line/ space=4/1) by using an EUV exposure apparatus (Micro Exposure Tool, manufactured by Exitech, NA: 0.3, X-di› pole, outer sigma: 0.68, inner sigma: 0.36). After the irra› diation, the wafer was heated on a hot plate at 110° C. for 60 seconds, then developed by puddling the organic devel› oper shown in the Table below for 30 seconds, rinsed by using the rinsing solution shown in the Table below, spun at a rotation speed of 4,000 rpm for 30 seconds and baked at 90° C. for 60 seconds to obtain an isolated space resist pattern of line/space=4: 1. 

(7) Evaluation of Resist Pattern 

Using a scanning electron microscope (S-9380II, manu› facture by Hitachi Ltd.), the obtained resist pattern was evaluated for sensitivity, resolution and space width rough› ness performance by the following methods. (7 -1) Sensitivity 

The irradiation energy below which a pattern of line/ space= 1: 1 having a line width of 50 nm cannot be resolved was taken as the sensitivity (Eop ). A smaller value indicates higher performance. 

(7-2) Resolution in Isolated Space 

The limiting resolution (the minimum space width below which a line and a space cannot be separated and resolved) of an isolated space (line/space=4:1) at Eop above was determined. This value was taken as "resolution (nm)". A smaller value indicates higher performance. 

(7-3) Space Width Roughness 

With respect to the space width roughness, the space width was measured at arbitrary 50 points in the longitudinal 0.5 µm region of an isolated space resist pattern of line/ space=4:1 at Eop above and after determining the standard deviation thereof, 3a was computed. A smaller value indi› cates higher performance 

<img src='content_image/886662.jpg'>

