content_image/908987.jpg content_image/908988.jpg
<img src='content_image/908987.jpg'>

<img src='content_image/908988.jpg'>

## [Developer, Rinsing Solution] 

[0540] G-1: Butyl acetate 

G-2: 2-Heptanone 

G-3: Anisole 

[0541] G-4: 4-Methyl-2-pentanol 

G-5: 1-Hexanol 

G-6: Decane 

## <Evaluation of Resist> 

[0542] An actinic ray-sensitive or radiation-sensitive resin composition (a resist composition) was prepared by dissolv› ing each component shown in the following Tables 2 to 5 in a solvent to prepare each solution having solid content concen› tration of 4.0% by mass, and the prepared solution was fil› tered through a polytetrafluoroethylene filter having a pore size of0.10 µm. The actinic ray-sensitive or radiation-sensi› tive resin composition was evaluated by the following method, and the results obtained were shown in Tables 2 to 5. [0543] As for each component, the ratio in the case of using a plurality of components was shown in a mass ratio. 

## Exposure Condition 1: EB (Electron Beam) Exposure/ Alkali Development 

## Examples 1 to 17 and 29 to 47, and Comparative Examples 1 to 5 

[0544] The prepared actinic ray-sensitive or radiation-sen› sitive resin composition was uniformly coated by a spin coater on a silicon substrate having been subjected to hexam- 

-continued 

ethyldisilazane treatment, and then subjected to heat-drying on a hot plate at 120° C. for 90 sec to thereby obtain an actinic ray-sensitive or radiation-sensitive film (a resist film) having a thickness of 50 nm. The actinic ray-sensitive or radiation› sensitive film was irradiated with an electron beam by using an electron beam irradiating apparatus (HL 7 50, manufac› tured by Hitachi, Ltd., accelerating voltage: 50 keV). Imme› diately after irradiation, the film was heated at 110° C. for 90 sec on a hot plate. Further, the film was developed with a tetramethylammonium hydroxide aqueous solution having concentration of 2.38% by mass at 23° C. for 60 sec, rinsed with pure water for 30 sec, and spin dried to obtain a resist pattern. 

## Exposure Condition 2: EUV (Extreme Ultraviolet Ray) Exposure/Alkali Development 

## Examples 18 to 28 and 48 to 60, and Comparative Examples 6 to 8 

[0545] The prepared actinic ray-sensitive or radiation-sen› sitive resin composition was uniformly coated by a spin coater on a silicon substrate having been subjected to hexam› ethyldisilazane treatment, and then subjected to heat-drying on a hot plate at 120° C. for 90 sec to form an actinic ray› sensitive or radiation-sensitive film (a resist film) having a thickness of 50 nm. The actinic ray-sensitive or radiation› sensitive film was subjected to exposure by an EUV exposure apparatus (Micro Exposure Tool, NA 0.3, Quadrupole, outer sigma 0.68, inner sigma 0.36, manufactured by Exitech) through a reflection type mask of a 1/1 line and space pattern of a line width of 50 nm. Immediately after exposure, the film was heated at 110° C. for 90 sec on a hot plate. Further, the film was developed with a tetramethylammonium hydroxide aqueous solution having concentration of 2.38% by mass at 23 ° C. for 60 sec, rinsed with pure water for 30 sec, and spin dried to obtain a resist pattern. 

## Exposure Condition 3: EB (Electron Beam) Exposure/Organic Solvent Development 

## Examples 61 to 76, and Comparative Examples 9 to 13 

[0546] The prepared actinic ray-sensitive or radiation-sen› sitive resin composition was uniformly coated by a spin coater on a silicon substrate having been subjected to hexam› ethyldisilazane treatment, and then subjected to heat-drying on a hot plate at 120° C. for 90 sec to form an actinic ray› sensitive or radiation-sensitive film (a resist film) having a thickness of 50 nm. The actinic ray-sensitive or radiation› sensitive film was irradiated with an electron beam by using an electron beam irradiating apparatus (HL 7 50, manufac› tured by Hitachi, Ltd., accelerating voltage: 50 keV). Imme› diately after irradiation, the film was heated at 110° C. for 90 sec on a hot plate. Further, the film was developed with the developer shown in Table 4 at 23° C. for 60 sec, rinsed with the rising solution shown in Table 4 (rinsing is not performed in the case of description of"None") for 30 sec, and spin dried to obtain a resist pattern. 

## Exposure Condition 4: EUV (Extreme Ultraviolet Ray) Exposure/Organic Solvent Development 

## Examples 77 to 90, and Comparative Examples 14 to 18 

[0547] The prepared actinic ray-sensitive or radiation-sen› sitive resin composition was uniformly coated by a spin 

