content_image/894808.jpg content_image/894809.jpg content_image/894807.jpg content_image/894810.jpg content_image/894811.jpg
substituted or unsubstituted Cl to C20 alkylene group and Rd is a substituted or unsubstituted Cl to C20 alkyl group, 

R$^{2 }$to R 4 are each independently selected from-OR a and ---OC(=O)Rb, 

Ra is selected from a substituted or unsubstituted Cl to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, and combinations thereof, and 

Rb is selected from hydrogen, a substituted or unsubsti› tuted Cl to C20 alkyl group, a substituted or unsub› stituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, and combinations thereof. 

2. The semiconductor resist composition of claim 1, wherein R $^{1 }$is selected from a substituted or unsubstituted Cl to Cl 0 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C3 to C20 alkenyl group, a substituted or unsubstituted C3 to C20 alkynyl group, and -Rc-0-Rd, wherein Rc is a s~b_sti› tuted or unsubstituted Cl to C20 alkylene group and R 1s a substituted or unsubstituted Cl to C20 alkyl group. 

3. The semiconductor resist composition of claim 1, wherein Ra is selected from a substituted or unsubstituted Cl to Cl 0 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to CS alkenyl group, a substituted or unsubstituted C2 to CS alkynyl group, and a substituted or unsubstituted C6 to C30 arylalkyl group, and Rb is selected from hydrogen, a sub› stituted or unsubstituted Cl to Cl0 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to CS alkenyl group, a substituted or unsubstituted C2 to CS alkynyl group, and a substituted or unsubstituted C6 to C30 arylalkyl group. 

4. The semiconductor resist composition of claim 1, wherein at least one of R 2 to R 4 is ---OC(=O)Rb. 

5. The semiconductor resist composition of claim 1, wherein the organometallic compound is represented by at least one of Chemical Formula 2 to Chemical Formula 4: 

<img src='content_image/894808.jpg'>

<img src='content_image/894809.jpg'>

<img src='content_image/894807.jpg'>

wherein, in Chemical Formula 2 to Chemical Formula 4, 1 

R is selected from a substituted or unsubstituted Cl to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 benzyl group, and-Rc-O-Rd, wherein Rc is a substituted or unsubstituted Cl to C20 alkylene group and Rd is a substituted or unsubstituted Cl to C20 alkyl group, 12 13 14 33 

R R R and R are each independently selected f;om ~ sub~tituted or unsubstituted Cl to Cl0 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to CS alkenyl group, a substituted or unsubstituted C2 to CS alkynyl group, and a substituted or unsubstituted C6 to C30 arylalkyl group, and 22 23 24 32 34 

R R R R and R are each independently s~lected fro~ hych-ogen, a substituted or unsubstituted Cl to Cl0 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubsti› tuted C2 to CS alkenyl group, a substituted or unsub› stituted C2 to CS alkynyl group, and a substituted or unsubstituted C6 to C30 arylalkyl group. 

6. The semiconductor resist composition of claim 5, wherein the organometallic compound is represented by at least one of Chemical Formula 3 to Chemical Formula 4: 

<img src='content_image/894810.jpg'>

<img src='content_image/894811.jpg'>

