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As the surfactant, the following compounds were used. 

Wl: MEGAFACE Fl 76 (manufactured by DIC Corpora› tion) (fluorine-based) 

W2: MEGAFACE ROS (manufactured by DIC Corpora› tion) (fluorine- and silicon-based) 

W3: Polysiloxane Polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) (silicon-based) 

W4: TROYSOL S-366 (manufactured by Troy Chemical Corporation) 

W5: KH-20 (manufactured by Asahi Glass Co., Ltd.) 

W6: POLYFOXTfM PF-6320 (manufactured by OMNOVA solution inc.) (fluorine-based) 

As the solvent, the following ones were used. 

Group a 

SL-1: Propylene glycol monomethyl ether acetate (PG- MEA) 

SL-2: Propylene glycol monomethyl ether propionate 

SL-3: 2-Heptanone 

Group b 

SL-4: Ethyl lactate 

SL-5: Propylene glycol monomethyl ether (PGME) 

SL-6: Cyclohexanone 

Group c 

SL-7: y-Butyrolactone 

As the developer and the rinsing liquid, the following ones were used. 

DR-1: 3-Methylbutyl acetate 

DR-2: Butyl acetate 

DR-3: Methyl amyl ketone (MAK) 

DR-4: 2.38%-by-mass aqueous tetramethylammonium hydroxide solution 

-continued 

C-5 

C-6 

DR-5: Undecane 

DR-6: Decane 

DR-7: Methyl isobutyl carbinol (MIBC=4-methyl-2-pen› tanol) 

DR-8: Pure water 

Examples 1 to 35 and Comparative Example 1 (Extreme Ultraviolet (EUV) Exposure and Organic Solvent Development) 

<Preparation of Resist Composition> 

The components shown in Tables 2 and 3 below were dissolved in a solvent, and each of the solutions was filtered through a polyethylene filter having a pore size of 0.03 µm to prepare resist compositions of Examples 1 to 35 and Comparative Example 1. Further, in Tables 2 and 3, the amounts in parts by mass of the respective components and solvent in are shown. 

<Formation of Resist Film, Pattern Formation, and Devel› opment> 

An organic antireflection film ARC29SR (manufactured by Nissan Chemical Industries, Ltd.) was applied onto a silicon wafer, and baking was carried out at 205° C. for 60 seconds to form an antireflection film having a film thick- ness of 86 nm. Each of the resist compositions prepared above was applied thereonto, and baking (PB) was carried out at 120° C. for 60 seconds to form a resist film having a film thickness of 50 nm. The wafer having the resist film applied thereon was subjected to pattern exposure with an exposure mask (line/space=l/1), using an EUV exposure device (Micro Exposure Tool manufactured by Exitech, NA 0.3, Quadrupole, outer sigma 0.68, inner sigma 0.36). After irradiation, heating was carried out at 120° C. for 60 seconds, development was then carried out by paddling for 30 seconds using a developer on a hot plate, the wafer was rotated at a rotation speed of 2,000 rpm for 30 seconds, and baking was carried out at 100° C. for 60 seconds to obtain a 1: 1 line-and-space pattern having a line width of 20 nm. 

Comparative Example 2 (Extreme Ultraviolet (EUV) Exposure) and Alkali Development 

In the same manner as in Comparative Example 1 except that the composition was changed as shown in Table 2 below, and thus, development was carried out with an aqueous alkali solution (TMAH; 2.38%-by-mass aqueous tetramethylammonium hydroxide solution) instead of the organic developer, and water was used as a rinsing liquid, a resist composition was prepared and pattern formation was carried out. 

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