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wherein R $^{11 }$is fluorine or an organic group selected from the group consisting of trifluoromethyl, pentafluoro- ethyl, trifluoroethyl, octafluorobutyl, nonafluorobutyl, 2-fluorophenyl, 3-fluorophenyl, 4-fluorophenyl, 2,4-di› fluorophenyl, 2,3-difluorophenyl, 3,4-difluorophenyl, 3,5-difluorophenyl, 2,4,5-trifluorophenyl, 2,3,4-trifluo› rophenyl, 2,3,4,5-tetrafluorophenyl, 2,3,5,6-tetrafluo- rophenyl, 2,3,4,5,6-pentafluorophenyl, 2-trifluorom› ethylphenyl, 3-trifluoromethylphenyl, 4-trifluoromethylphenyl, 2,4-di(trifluoromethyl)phe› nyl, 4-hydroxy-2,3,5,6-tetrafluorophenyl, 4-methoxy- 2,3,5,6-tetrafluorophenyl, 4-acetoxy-2,3,5,6-tetrafluo› rophenyl, 4-pivaloyloxy-2,3,5,6-tetrafluorophenyl, 

4-cyclohexylcarbonyloxy-2,3,5,6-tetrafluorophenyl, 4-adamantylcarbonyloxy-2,3 ,5, 6-tetrafluoropheny 1, 4-phenylcarbonyloxy-2,3,5,6-tetrafluorophenyl, 4-cy› clohexylsulfonyl-2,3,5,6-tetrafluorophenyl, and 4-phe› nylsulfonyl-2,3,5,6-tetrafluorophenyl, 15 16 17 18 19 

R , R , R , R , and R are each independently fluorine, trifluoromethyl, pentafluoroethyl, trifluoro› ethyl, octafluorobutyl, or nonafluorobutyl, R $^{15 }$and R 16 may bond together to form a ring, 20 21 22 

R , R , R , and R $^{23 }$are each independently fluorine or trifluoromethyl, each of p, q, r and s is an integer of 1 to 5. 

12. A pattern forming process comprising the steps of coating the resist composition of claim 11 onto a substrate, baking, exposing the resulting resist film to high-energy radiation, and developing with a developer. 

13. A pattern forming process comprising the steps of coating a resist composition onto a substrate, baking, expos› ing the resulting resist film to high-energy radiation, and developing with a developer; 

wherein the resist composition comprises recurring units of acid labile group-substituted (meth)acrylic acid, styrenecarboxylic acid or vinylnaphthalenecarboxylic acid and/or recurring units having an acid labile group- substituted phenolic hydroxyl group, and an acid gen› erator, or a copolymer comprising recurring units of acid labile group-substituted (meth)acrylic acid, styren› ecarboxylic acid or vinylnaphthalenecarboxylic acid and/or recurring units having an acid labile group- substituted phenolic hydroxyl group and recurring units having an acid generator, and 

said resist composition further comprises a complex of a metal with an acid, the metal being selected from the group consisting of cerium, copper, zinc, iron, indium, yttrium, ytterbium, tin, thulium, scandium, nickel, neo› dymium, hafnium, zirconium, titanium, lanthanum, sil› ver, barium, holmium, terbium, lutetium, europium, dysprosium, gadolinium, rubidium, strontium, and cesium, and the acid being selected from the group consisting of an alkylsulfonic acid, arylsulfonic acid, alkylsulfonimidic acid, alkylsulfonemethide acid, and tetraphenylboric acid each of which has at least one fluorine atom; 

wherein in the step of exposing the resist film to high› energy radiation, the surface of the substrate under› neath the resist film is electrically charged positive. 

14. A pattern forming process comprising the steps of coating the resist composition of claim 13 onto a substrate, baking, exposing the resulting resist film to high-energy radiation, and developing with a developer. 

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