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# c19) United States c12) Patent Application Publication 

# Hatakeyama et al. 

# (54) RESIST COMPOSITION AND PATTERNING PROCESS 

(71) Applicant: Shin-Etsu Chemical Co., Ltd., Tokyo (JP) 

(72) Inventors: Jun Hatakeyama, Joetsu-shi (JP); Masaki Ohashi, Joetsu-shi (JP); Takayuki Fujiwara, Joetsu-shi (JP) 

(73) Assignee: Shin-Etsu Chemical Co., Ltd., Tokyo (JP) 

(21) Appl. No.: 16/795,760 

(22) Filed: Feb. 20, 2020 

## (30) Foreign Application Priority Data 

Mar. 6, 2019 (JP) ................................. 2019-040730 

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(51) Int. Cl. 

(52) U.S. Cl. CPC .......... G03F 710045 (2013.01); G03F 710392 (2013.01); G03F 710382 (2013.01); G03F 710384 (2013.01); G03F 710048 (2013.01); G03F 71426 (2013.01); G03F 712004 (2013.01) 

## (57) ABSTRACT 

A resist composition is provided comprising a base polymer and a 2,5,8,9-tetraaza-l-phosphabicyclo[3.3.3]undecane, biguanide or phosphazene salt of an iodized aromatic group› containing N-carbonysulfonamide. The salt is effective for sensitizing and suppressing acid diffusion and prevents any film thickness loss after development. The resist composi› tion is improved in resolution, LWR and CDU when a pattern is formed therefrom by lithography. 

US 20200285149Al 

# c10) Pub. No.: US 2020/0285149 Al 

# (43) Pub. Date: Sep. 10, 2020 

## Publication Classification 

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