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3) Preparation of Resist Compositions 

Positive resist compositions were prepared by dissolving selected components in a solvent in accordance with the recipe shown in Table 1, and filtering through a filter having a pore size of 0.2 µm. The solvent contained 100 ppm of a surfactant FC-4430 (3M). 

The components in Table 1 are as identified below. 

Polymers 1 to 5: polymers synthesized in Synthesis Examples 2 to 6 

Comparative Polymers 1 and 2: polymers synthesized in Comparative Synthesis Examples 1 and 2 

Organic solvents: propylene glycol monomethyl ether acetate (PGMEA) propylene glycol monomethyl ether (PGME) cyclohexanone (CyH) diacetone alcohol (DAA) 

Acid generators: PAGl to PAG4 of the following structural formulae 

Basic compound: Quencher 1 of the following structural formula 

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4) EUV Exposure Test 

The positive resist composition was spin coated on a silicon substrate having a silicon-containing spin-on hard mask SHB-A940 (Si content 43 wt %) coating of 20 nm thick and pre baked on a hot plate at 105° C. for 60 seconds to form a resist film of 60 am thick. Using an EUV scanner NXE3300 (ASML, NA 0.33, o0.9/0.6, quadrupole illumi› nation), the resist film was exposed to EUV through a mask bearing a hole pattern at a pitch 46 nm (on-wafer size) and 

PAGl 

PAG2 

PAG3 

PAG4 

