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# c19) United States c12) Patent Application Publication 

# Ohashi 

# (54) RESIST COMPOSITION AND PATTERNING PROCESS 

(71) Applicant: Shin-Etsu Chemical Co., Ltd., Tokyo (JP) 

(72) Inventor: Masaki Ohashi, Joetsu-shi (JP) 

(73) Assignee: Shin-Etsu Chemical Co., Ltd., Tokyo (JP) 

(21) Appl. No.: 15/153,060 

(22) Filed: May 12, 2016 

## (30) Foreign Application Priority Data 

May 14, 2015 (JP) ................................. 2015-098783 

<img src='content_image/895663.jpg'>

(51) Int. Cl. 

(52) U.S. Cl. CPC ............... G03F 71039 (2013.01); G03F 71168 (2013.01); G03F 712004 (2013.01); G03F 712053 (2013.01); G03F 7138 (2013.01); G03F 71322 (2013.01); G03F 712041 (2013.01) 

## (57) ABSTRACT 

A resist composition comprising (A) a base resin of specific structure and (B) an ammonium salt is provided. When processed by ArF, EB or EUV lithography, the resist com› position exhibits a high sensitivity and high resolution and is improved in LER. 

US 20160334706Al 

# c10) Pub. No.: US 2016/0334706 Al 

# (43) Pub. Date: Nov. 17, 2016 

## Publication Classification 

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