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For the resist described in Example 1, pattern formation was carried out by adjusting the developer and the rinsing liquid. 

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[Evaluation of Resist Pattem/EUV] 

Performance evaluation of the resist pattern was carried out using a scanning electron microscope (S-9380II manu› factured by Hitachi, Ltd.). 

<Resolving Power (LS)> 

An optimum exposure dose at which the resolution of the resist pattern having a line width of 50 nm (line:space=l:1) was resolved was taken as sensitivity (Eopt) (mJ/cm 2 ). A critical resolving power at the determined optimum expo- sure dose (Eopt) (the minimum line width with which the line and the space (line:space=l:1) are separated and resolved) was taken as an LS resolving power (nm). As the value is smaller, the resolving power is excellent, which is thus favorable. 

<Line Width Roughness (LWR)> 

With regard to the line width roughness, in the Eopt, line widths at arbitrary 50 points having a size of 0.5 µm in the longitudinal direction of a line-and-space pattern (line: space= 1: 1) having a line width of 20 nm were measured, and the standard deviation thereof was determined to calculate 3a (nm). A smaller value indicates better performance. 

<PEB Shrinkage> 

With regard to the PEB shrinkage, electron beams were irradiated at an irradiation dose of 2.0 times the irradiation dose for providing sensitivity above, the film thickness was measured after exposure and before post-baking, and the change rate from the film thickness upon unexposure was determined. A case where the change rate is 100% or less and 80% or more is denoted as A, a case where the change rate is less than 80% and 70% or more is denoted as B, a case where the change rate is less than 70% and 60% or more is denoted as C, and a case where the change rate is less than 60% is defined as D. 

PEB Shrinkage (%)~100-[(Film thickness upon unexposure-Film thickness after PEB)/Film thickness upon unexposure ]x 100 

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