one terminal of the main chain thereof, and hence, exhibits a function of generating acid upon exposure. 

For example, the group represented by the general formula (anl) and the terminal group (I-1) have a sulfonium salt portion at the terminal thereof, thereby generating sulfonic acid upon exposure. 

Therefore, it is presumed that, acid is generated from the terminal of the polymeric compound at exposed portions, and sensitivity can be improved. 

Further, it is presumed that, in the case where the polymeric compound has a group which exhibits a function of generat› ing acid, the excess diffusion of acid generated can be sup› pressed, as compared to the case where the acid generator of low-molecular compound as exemplified above as a compo› nent (B) is used alone. 

The anion portions at the terminal of the main chain, which generate acid upon exposure, is uniformly distributed within the resist film, and at exposed portions, acid is generated uniformly from the anion portions. As a result, at exposed portions, the acid decomposable group in the polymeric com› pound (Al) is likely to be decomposed uniformly. 

In the case where the polymeric compound contained in the resist composition of the fifth aspect of the present invention is the component (Al’) which exhibits changed solubility in a developing solution by the action of acid, the terminal group (I-1) which generates acid upon exposure is uniformly dis› tributed within the resist film together with the component (Al’). It is presumed that acid is uniformly generated from the terminal group (I-1) at exposed portions, so that the acid decomposable groups within the component (Al’) is uni› formly cleaved at exposed portions, thereby achieving the aforementioned effects. The component (Al’) has a group (I-1) which generates acid upon exposure, and the acid decomposable group and acid generated are present in rela› tively close. It is presumed that a decomposition reaction by the action of acid is likely to proceed, thereby improving the aforementioned effect. 

In the case where the polymeric compound contained in the resist composition of the seventh aspect of the present inven› tion is the component (Al) which exhibits increased polarity by the action of acid, the acid decomposable group and acid generated from the anion portion are present in relatively close. As a result, a decomposition reaction of the acid decomposable group is likely to proceed by the action of acid, 

Furthermore, the polymeric compound contained in the resist composition of the seventh aspect of the present inven› tion includes the component (C) which functions as a quencher, in addition to the polymeric compound (Al). It is presumed that the component (C) lose the function as a quencher at exposed portions, thereby making a large contrast of concentration of acid between the exposed portions and the unexposed portions, and enabling formation of a pattern with excellent shape and lithography properties. 

<<Method of Forming a Resist Pattern>> 

The method of forming a resist pattern according to the sixth aspect and eighth aspect of the present invention includes: forming a resist film on a substrate using a resist composition of the fifth aspect of the present invention; con› ducting exposure of the resist film; and developing the resist film to form a resist pattern. 

The method for forming a resist pattern according to the present invention can be performed, for example, as follows. 

Firstly, a resist composition is applied onto a substrate using a spinner or the like, and a prebake (post applied bake (PAB)) is conducted under temperature conditions of 80 to 150° C. for 40 to 120 seconds, preferably 60 to 90 seconds to form a resist film. Then, for example, either by exposure with 

an ArF excimer laser or an electron beam (EB) through a desired mask pattern using an ArF exposure apparatus or an electron beam lithography apparatus, or by patterning via direct irradiation with an electron beam without using a mask pattern, followed by post exposure bake (PEB) under tem› perature conditions of 80 to 150° C. for 40 to 120 seconds, preferably 60 to 90 seconds. Subsequently, the resist film is subjected to a developing process. 

In the case of an alkali developing process, an alkali devel- oping solution such as a 0.1 to 10% by weight aqueous solu› tion oftetramethylammonium hydroxide (TMAH) is used to perform an alkali developing treatment. 

Alternatively, in the case of a solvent developing process, an organic solvent is used to perform a developing treatment. As the organic solvent, any of the conventional organic sol› vents can be used which are capable of dissolving the com› ponent (A) (prior to exposure). Specific examples of the organic solvent include polar solvents such as ketone sol› vents, ester solvents, alcohol solvents, amide solvents and ether solvents, and hydrocarbon solvents. Among these, ester solvents are preferable. As an ester solvent, butyl acetate is preferable. 

After the developing treatment, it is preferable to conduct a rinse treatment. In the case of an alkali developing process, it is preferable to conduct a water rinse using pure water. In the case of a solvent developing process, it is preferable to use a rinse liquid containing the aforementioned organic solvent. 

In the case of a solvent developing process, after the devel› oping treatment or the rinsing, the developing solution or the rinse liquid remaining on the pattern can be removed by a treatment using a supercritical fluid. 

Thereafter, drying is conducted. If desired, bake treatment (post bake) can be conducted following the developing. In this manner, a resist pattern that is faithful to the mask pattern can be obtained. 

The substrate is not specifically limited and a convention› ally known substrate can be used. For example, substrates for electronic components, and such substrates having wiring patterns formed thereon can be used. Specific examples of the material of the substrate include metals such as silicon wafer, copper, chromium, iron and aluminum; and glass. Suitable materials for the wiring pattern include copper, aluminum, nickel, and gold. 

Further, as the substrate, any one of the above-mentioned substrates provided with an inorganic and/or organic film on the surface thereof may be used. As the inorganic film, an inorganic anti-reflection film (inorganic BARC) can be used. As the organic film, an organic antireflection film ( organic BARC) and an organic film such as a lower-layer organic film used in a multilayer resist method can be used. 

Here, a "multilayer resist method" is method in which at least one layer of an organic film (lower-layer organic film) and at least one layer of a resist film (upper resist film) are provided on a substrate, and a resist pattern formed on the upper resist film is used as a mask to conduct patterning of the lower-layer organic film. This method is considered as being capable of forming a pattern with a high aspect ratio. 

More specifically, in the multilayer resist method, a desired thickness can be ensured by the lower-layer organic film, and as a result, the thickness of the resist film can be reduced, and an extremely fine pattern with a high aspect ratio can be formed. 

The multilayer resist method is broadly classified into a method in which a double-layer structure consisting of an upper-layer resist film and a lower-layer organic film is formed ( double-layer resist method), and a method in which a multilayer structure having at least three layers consisting of 

