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The resins (R-2), (R-8), (R-14), (R-17), (R-lO(H)), (R-10 (L)), (R-18(H)), (R-18(L)), (R-19), (R-20) and (R-21) appearing in Table 2 are resins shown hereinbefore by way of example. With respect to each of these resins, the molar ratio of individual repeating units and the weight average molecu› lar weight are given in Table 3. 

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## TABLE3 

It is apparent from the results of Table 2 that the photosen› sitive composition of the present invention exhibits excellent performance as a positive resist composition employed in KrF excimer laser exposure. 

Examples ID to 15D and Comparative Examples ID and2D 

<Preparation of Resist> 

Referring to Table 4 below, with respect to each of the resists, the individual components were dissolved in the sol- vent and passed through a polytetrafluoroethylene filter of0.1 µm pore size, thereby obtaining a negative resist solution of 14 mass % solid content. The thus obtained negative resist solutions were evaluated in the same manner as in the Example C (KrF positive exposure). The results are given in Table 4. 

## TABLE4 

## Example D 

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