content_image/891104.jpg
taken as the limiting pattern collapse line width and this is made as the indicator of pattern collapse performance. The smaller the value, the pattern is resolved without collapse of the finer pattern, that is, the pattern collapse performance is good. The results obtained are shown in Table 6. Incidentally, since Comparative Example 102 is positive development, when exposure amount is increased from the above Eop to make the line width thinner the minimum line width capable of resolution without causing pattern collapse is taken as the 

[0986] Incidentally, taking the height of the resist pattern from the surface of the substrate (when the height of the resist pattern is not uniform, the maximum height of the resist pattern from the surface of the substrate) as T, the line width at the lower part of the pattern means the line width of the resist pattern at the height of0.lxT from the surface of the substrate. The line width at the upper part of the pattern means the line width of the resist pattern at the height of 0.9xT from the surface of the substrate 

<img src='content_image/891104.jpg'>

limiting pattern collapse line width and this is made as the indicator of pattern collapse performance. 

<Evaluation of Pattern Form (Form of Bite at the Lower Part of the Pattern)> 

[0985] In the above Eop, a 1/1 line and space pattern having a line width of 50 nm is observed with a scanning electron microscope (S4800, manufactured by Hitachi Limited). The case where bite at the lower part of the resist pattern is not observed and the line width at the lower part of the pattern is a line width ofl 01 % or less and 99% or more of the line width at the upper part of the pattern is graded A, the case where although a slight bite is observed at the lower part of the resist pattern, the line width at the lower part of the pattern is a line width in the range of less than 99% and 90% or more of the line width at the upper part of the pattern is graded B, and the case where bite at the lower part of the resist pattern is observed and the line width at the lower part of the pattern is less than 90% of the line width at the upper part of the pattern is graded C. The results obtained are shown in Table 6. 

[0987] As can be seen from the above table, Examples 101 to 123 achieve high sensitivity and are excellent in pattern collapse performance and are further excellent in the form not generating the bite at the lower part of the pattern as compared with Comparative Example 101 wherein the low molecular weight compound (B) according to the invention is not used and Comparative Example 102 wherein the positive pattern is formed with the alkali developer. That is, it is apparent that the invention is excellent in the above performances and a highly precise fine pattern can be stably formed in EB exposure according to the invention. 

[0988] Further, in Examples 101 to 121 where the content of the acid generator to all the solids content of the composi› tion is 21 % by mass or more, further higher sensitivity can be achieved. 

[0989] According to the invention, a pattern high in sensi› tivity, improved in pattern collapse, and having an excellent 

## INDUSTRIAL APPLICABILITY 

