content_image/916192.jpg content_image/916193.jpg content_image/916202.jpg
Mw=S,200 Mw/Mn=l.69 

<img src='content_image/916192.jpg'>

A positive resist composition in solution form was pre- pared by dissolving a resist film surface-modifying polymer (Polymers 1 to 7, shown above), a polymer obtained by con› ventional radical polymerization (Resist Polymers 1 to 5, shown below) and components in a solvent in accordance with the formulation of Table 1 and filtering through a filter with a pore size of0.2 µm. 

EUV Lithography Patterning Test 

Outgassing Test Simulated for EUV Lithography 

The resist composition (see Table 3) was coated onto a HMDS-primed 12-inch wafer to form a resist film of 60 nm thick. Using a resist outgassing tool (EUV Tech), the resist film was exposed to EB in a varying dose, baked (PEB) at the temperature shown in Table 3, and developed in an alkaline developer (2.38 wt % TMAH aqueous solution). E0 is the dose at which the film thickness became 0 nm. After the wafer was subjected to flood exposure at the dose of E0, the thick› ness of contaminants deposited on Witness Plate was mea- sured by spectral ellipsometry. The results are shown in Table 3. 

## Examples and Comparative Examples 

## Reference Polymer 1 

## Preparation of Resist Composition 

Mw=6,700 Mw/Mn=l.58 

<img src='content_image/916193.jpg'>

Mw=6,900 Mw/Mn=l.68 

<img src='content_image/916202.jpg'>

## Resist Polymer 1 

## Resist Polymer 2 

