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S2: Propylene glycol monomethyl ether (1-methoxy-2- propanol) 

S3: 2-heptanone 

S4: Ethyl lactate 

S5: Cyclohexanone 

S6: y-butyrolactone 

S7: Propylene carbonate 

<img src='content_image/909589.jpg'>

From the results shown in Table 8, it is understood that the composition according to the present invention is excellent in sensitivity, resolving power, pattern shape, and LER performance. In addition, it is understood that Examples IE, 2E, 4E to 6E, SE, llE, 16E to 21E, and 23E which used a compound where X$_{1 }$ or X$_{2 }$ was a group represented by -S- in General Formula (I) or (II) are particularly excel› lent in the LER performance, while Examples 3E, 7E, 9E, !OE, 12E to 15E, 22E, 24E to 27E which used a compound where X$_{1 }$ or X$_{2 }$ was a group represented by -NH- or -NR 1 - in General Formula (I) or (II) are particularly excellent in resolving power. 

## Example IF-SF and Comparative Examples 1F-4F 

## (Preparation of Resist Solution) 

A negative type resist solution was prepared by filtering the negative type resist composition shown in Table 7 above through a polytetrafluoroethylene filter having a pore size of 0.04 µm. 

(Resist Evaluation) 

The prepared negative type resist solution was evenly coated on a silicon substrate subjected to a hexamethyldisi- lazane treatment using a spin coater, and a resist film having a film thickness of 50 nm was formed by heating and drying on a hot plate for 60 seconds at lOO*C. 

The sensitivity, the resolving power, the pattern shape, and the line edge roughness (LER) of the obtained resist film were evaluated using the following methods. 

## [Sensitivity] 

After performing exposure on the obtained resist film via a reflective-type mask with a 1: 1 line and space pattern with a line width of 50 nm while changing the exposure amount by 0.1 mJ/cm 2 at a time in a range of O mJ/cm 2 to 20.0 mJ/cm 2 using EUV light (wavelength 13 nm), baking was carried out for 90 seconds at 110° C. Thereafter, develop› ment was carried out by using a 2.38 mass % tetramethyl ammonium hydroxide (TMAH) aqueous solution. 

The exposure amount for reproducing a 1: 1 line and space mask pattern with a line width of 50 nm was set as the sensitivity. The smaller this value is, the higher the sensi› tivity. 

## [LS Resolving Power] 

The limit resolving power (the minimum line width at which the lines and spaces are separately resolved) in the exposure amount indicating the sensitivity described above was set as the LS resolving power (nm). 

