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sigma 0.68, inner sigma 0.36, manufactured by Exitech) through an exposure mask (line/space: 1/1 ). After irradiation, the wafer is heated at 110° C. for 60 seconds on a hot plate. After that, the wafer is puddled with the organic developer shown in the following table and developed for 30 seconds, and then rinsed by using the rinsing solution shown in the table below. Subsequently, the wafer is revolved at 4,000 rpm for 30 seconds and then heated at 90° C. for 60 seconds, to thereby obtain a resist pattern ofline and space pattern of 1/1 having a line width of 50 nm. 

## Extreme Ultraviolet Radiation (EUV) Exposure 

An electron beam-sensitive or extreme ultraviolet radia- tion-sensitive resin composition is prepared and a pattern is formed in the same manner as in Example 101 except that the constitution is changed as shown in the table below, and development is performed with an alkali aqueous solution (TMAH, a 2.38% by mass tetramethyammonium hydroxide aqueous solution) in place of the organic developer and water is used as the rinsing solution. 

## Comparative Examples 105 and 106 

(6) Evaluation of Resist Pattern 

Sensitivity, resolution and LWR of the obtained resist pat- tern are evaluated with a scanning electron microscope (S-9380II, manufactured by Hitachi Limited) by the follow- ing methods. The results obtained are shown in the table below. 

( 6-1) Sensitivity 

Energy of irradiation at the time of resolving a 1/1 line and space pattern having a line width of 50 nm is taken as sensi- tivity (Eop ). The smaller the value, the better is the perfor- mance. 

(6-2) Resolution 

In the above Eop, the smallest line width of the separated 1/1 line and space pattern is taken as resolution. The smaller the value, the better is the performance. 

(6-3) Line Width Roughness (LWR) 

Concerning line width roughness, in the above Eop, line width is measured at arbitrary 50 points of 0.5 µm in the longitudinal direction of a line and space pattern having a line width of 50 nm and standard deviation is obtained, from which 3a is computed. The smaller the value, the better is the performance. 

## TABLE2 

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