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a:(b+b’):(c+c’)=l:4-7:0.01-1 (molar ratio) Mw=l,500 

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## Examples 2-1 to 2-14 and Comparative Examples 2-1 to 2-7 

## Resist Test 1 (ArF Lithography) 

On a silicon substrate, an antireflective coating solution 65 (ARC-29A, Nissan Chemical Industries, Ltd.) was coated and baked at 200° C. for 60 seconds to form an ARC of 100 

-continued 

run thick. Each of the resist solutions shown in Table 4 was spin coated on the silicon substrate and baked on a hot plate at 100° C. for 60 seconds, forming a resist film of 90 run thick on the ARC. The wafer was exposed on an ArF excimer laser immersion lithography scanner (NSR-R610C by Nikon Corp., NA 1.30, dipole illumination, Cr mask), baked (PEB) at 80° C. for 60 seconds, and developed, in a 2.38 wt% tetramethylammonium hydroxide (TMAH) aque- ous solution for 60 seconds, forming a pattern. 

Resist evaluation was made on a 40-run 1:1 line-and- space pattern. On observation under an electron microscope, the optimum exposure dose (Eop) was defined as an expo- sure dose (mJ/cm 2 ) which provided a line width of 40 run. 

The width of lines of a 40-run 1: 1 line-and-space pattern was measured under SEM to determine a line width varia- tion (30 points measured, 3a value computed), which was reported as line width roughness (LWR). A smaller value of 

LWR indicates a line pattern with a less fluctuation and of better profile. In this test, the sample is rated good when LWR is equal to or less than 3.0 run and poor when LWR is equal to or more than 3 .1 run. 

An LIS pattern was formed by exposure in the optimum dose (determined in the sensitivity evaluation) through the mask with the pitch fixed and the line width varied. MEF 

