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<(C) Basic Compound> TBAH: Tetrabutylammonium hydroxide DBN: 1,5-Diazabicyclo[ 4.3.0]non-5-ene TDA: Tri-n-decylamine <Surfactant> W-1: Megaface Fl 76 (produced by DIC Corporation) W-2: PF6320 (produced by OMNOVA) <Solvent> PGMEA: Propylene glycol monomethyl ether acetate PGME: Propylene glycol monomethyl ether EL: Ethyl lactate 

## Examples 1 to 15 and Comparative Examples 1 to 6 

Resist patterns were formed using Compositions 1 to 10 shown in Table 2 by the following operation. Details of the conditions for resist pattern formation are shown in Table 3. 

## EB Exposure Evaluation 1 

[Coating of Resist] 

The positive resist solution prepared was uniformly applied on a hexamethyldisilazane-treated silicon substrate by using a spin coater and dried by heating on a hot plate at 120° C. for 90 seconds. Incidentally, the thickness of the coated film shown in Table 3 is the film thickness after drying by heating. [Exposure] 

The resist film was exposed to a line pattern (length direc- tion: 0.5 mm, number oflines drawn: 40) having a line width of20 to 30 nm in steps of2.5 nm by using an electron beam irradiation apparatus (JBX6000, manufactured by JEOL, accelerating voltage: 50 keV) and varying the irradiation dose. 

[Post-Exposure Baking] 

Immediately after the irradiation, the resist film was heated on a hot plate at 110° C. for 90 seconds. [Development] 

1. Shower Development 

Using a shower-type developing apparatus (ADE3000S, manufactured by ACTES), development was performed by spraying and ejecting the alkali developer (23° C.) shown in Table 3 at a flow rate of 200 mL/min for the time shown in Table 3 while rotating the wafer at 50 revolutions (rpm). 

Thereafter, a rinsing treatment was performed by spraying and ejecting pure water used as the rinsing solution (23 ° C.) at a flow rate of 200 mL/min for 30 seconds while rotating the wafer at 50 revolutions (rpm). 

Finally, the wafer was dried by high-speed spinning at 2,500 revolutions (rpm) for 60 seconds. 

2. Puddle Development 

Using a shower-type developing apparatus (ADE3000S, manufactured by ACTES), the alkali developer (23° C.) shown in Table 3 was sprayed and ejected at a flow rate of200 mL/min for 5 seconds while rotating the wafer at 50 revolu› tions (rpm), to raise the developer on the wafer. Subsequently, rotation of the wafer was stopped, and development was performed by leaving the wafer to stand still for the time shown in Table 3. 

Thereafter, a rinsing treatment was performed by spraying and ejecting pure water used as the rinsing solution (23 ° C.) at a flow rate of 200 mL/min for 30 seconds while rotating the wafer at 50 revolutions (rpm). 

The alkali development time shown in Table 3 was deter› mined by the following method. 

A composition where out of the composition components shown in Table 2, the polymer compound was changed to the polymer compound before acetal protection, was prepared. As for Comparative Example 6, the polymer compound was synthesized by using methacrylic acid in place of tert-butyl methacry late. 

The composition was uniformly coated on a hexamethyl- disilazane-treated silicon substrate by using a spin coater and dried by heating on a hot plate under the same conditions as above to prepare a wafer coated with a composition. 

Subsequently, the wafer was developed under the condi› tions shown in Table 3 and after the completion of develop- ment, the film thickness of the wafer was measured. The development time required when the alkali developer was used in each concentration was determined by rating that the wafer with remaining of the resist was Band the wafer with› out remaining of the resist was A. As Reference Example, the results of determining the development time described in Example 2 are shown in Table 4. 

Incidentally, in Table 3, the amount added shown in the column of Other Additives is the value in terms of mass % based on the entire mass of the alkali developer. Also, in the Tables below, TMAH means an aqueous tetramethylammo› nium hydroxide solution, and Surfynol 440 means Surfynol 440 (produced by Nissin Chemical Industry Co., Ltd.). 

