effects are prominent at 1D. In particular our data support a generalized Johnson-Nyquist expression for thermal noise in 1D transistors introduced in the paper. Finally we have benchmarked nanotube FETs against nanotube SETs for applications as fast single electron detectors. 

## Acknowledgments 

Authors acknowledge fruitful discussions with G. Dambrine, V. Derycke, P. Dollfus, C. Glattli, H. Happy and M. Sanquer. The research has been supported by french ANR un- der contracts ANR-2005-055-HF-CNT, ANR-05-NANO-010-01-NL-SBPC, and EU-STREP project CARDEQ under contract IST-FP6-011285. 

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