10.1038/srep39770
Real-time oxide evolution of copper protected by graphene and boron nitride barriers

The graphene samples were grown using a commercial Annealsys AS-ONE cold-wall chemical vapour deposition (CVD) reactor on 25 μm-thick electropolished copper foils. First, the Cu foils were annealed in argon at 1035 degC in atmospheric pressure for 10 minutes, then graphene was synthesised at the same temperature at a pressure of 25 mbar using a mixture of 900sccm Ar, 60sccm H2 and 2sccm CH4 for 15 minutes. hBN coatings were grown using a quartz tube furnace on the same batch of electropolished copper foils used for growing graphene. The growth was done at 900 degC at a total pressure of 60 mbar for 15 minutes with a mixture of 300sccm Ar, 15sccm H2 and 3sccm of borazine (B3H6N3, from Fluorochem).
electropolished copper foils
thick
25 μm
μm
Cu foils
annealed
1035 degC
degC
Cu
annealed
10 minutes
minutes
Ar
mixture
900sccm
sccm
H2
mixture
60sccm
sccm
CH4
mixture
2sccm
sccm
graphene was synthesised
pressure
25 mbar
mbar
graphene
synthesised
15 minutes
minutes
growth
900 degC
degC
mixture
total pressure
60 mbar
mbar
mixture
15 minutes
minutes
Ar
300sccm
sccm
H2
15sccm
sccm
borazine
3sccm
sccm