The 0.13-micron generation of semiconductors is the most technologically difficult to date. Almost every major manufacturer devotes tremendous efforts to R & D but there has been much delay in reaching the mass-production stage. This is because of two new technologies, the copper damascene process and low-k dielectric materials. They are the new challenges for the development of semiconductor fabrication.
0.13 微米（130 奈米），是半導體技術障礙最高的一代，每家大廠幾乎都投入研發心血，但遲遲沒人能進入量產階段，這是由於銅製程、低介電係數材料等兩大新技術，是半導體製程發展的新挑戰。