In less than a year, Estron Inc. had developed a 256 K SRAM (static random access memory) device that was, at 12 nanoseconds, the world's fastest. This device is needed by the new generation of high-function microcomputers.
不到一年時間，鈺創開發出一顆全球最快速的十二奈秒二五六 K SRAM（快速靜態隨機存取記憶體），這是新一代高功能微電腦亟需的記憶體。