InGaO3 crystallizes in the hexagonal P6_3/mmc space group. In(1) is bonded to six equivalent O(1) atoms to form InO6 octahedra that share corners with six equivalent Ga(1)O5 trigonal bipyramids and edges with six equivalent In(1)O6 octahedra. Ga(1) is bonded to two equivalent O(1) and three equivalent O(2) atoms to form GaO5 trigonal bipyramids that share corners with six equivalent In(1)O6 octahedra and corners with six equivalent Ga(1)O5 trigonal bipyramids. The corner-sharing octahedral tilt angles are 61°. There are two inequivalent O sites. In the first O site, O(2) is bonded in a trigonal planar geometry to three equivalent Ga(1) atoms. In the second O site, O(1) is bonded to three equivalent In(1) and one Ga(1) atom to form a mixture of distorted edge and corner-sharing OIn3Ga tetrahedra.
InGaO3 crystallizes in the hexagonal P6_3/mmc space group. In(1) is bonded to six equivalent O(1) atoms to form InO6 octahedra that share corners with six equivalent Ga(1)O5 trigonal bipyramids and edges with six equivalent In(1)O6 octahedra. All In(1)-O(1) bond lengths are 2.19 Å. Ga(1) is bonded to two equivalent O(1) and three equivalent O(2) atoms to form GaO5 trigonal bipyramids that share corners with six equivalent In(1)O6 octahedra and corners with six equivalent Ga(1)O5 trigonal bipyramids. The corner-sharing octahedral tilt angles are 61°. Both Ga(1)-O(1) bond lengths are 1.96 Å. All Ga(1)-O(2) bond lengths are 1.92 Å. There are two inequivalent O sites. In the first O site, O(2) is bonded in a trigonal planar geometry to three equivalent Ga(1) atoms. In the second O site, O(1) is bonded to three equivalent In(1) and one Ga(1) atom to form a mixture of distorted edge and corner-sharing OIn3Ga tetrahedra.