CsSi2N3 crystallizes in the orthorhombic Cmc2_1 space group. Cs(1) is bonded in a 10-coordinate geometry to four equivalent N(2) and six equivalent N(1) atoms. Si(1) is bonded to one N(2) and three equivalent N(1) atoms to form corner-sharing SiN4 tetrahedra. There are two inequivalent N sites. In the first N site, N(2) is bonded in a distorted linear geometry to four equivalent Cs(1) and two equivalent Si(1) atoms. In the second N site, N(1) is bonded in a distorted trigonal planar geometry to three equivalent Cs(1) and three equivalent Si(1) atoms.
CsSi2N3 crystallizes in the orthorhombic Cmc2_1 space group. Cs(1) is bonded in a 10-coordinate geometry to four equivalent N(2) and six equivalent N(1) atoms. There are a spread of Cs(1)-N(2) bond distances ranging from 2.85-2.96 Å. There are a spread of Cs(1)-N(1) bond distances ranging from 2.86-3.12 Å. Si(1) is bonded to one N(2) and three equivalent N(1) atoms to form corner-sharing SiN4 tetrahedra. The Si(1)-N(2) bond length is 1.70 Å. There are two shorter (1.86 Å) and one longer (1.89 Å) Si(1)-N(1) bond length. There are two inequivalent N sites. In the first N site, N(2) is bonded in a distorted linear geometry to four equivalent Cs(1) and two equivalent Si(1) atoms. In the second N site, N(1) is bonded in a distorted trigonal planar geometry to three equivalent Cs(1) and three equivalent Si(1) atoms.