GaSi2N3 crystallizes in the orthorhombic Cmc2_1 space group. Ga(1) is bonded in a single-bond geometry to one N(2) atom. Si(1) is bonded to one N(2) and three equivalent N(1) atoms to form corner-sharing SiN4 tetrahedra. There are two inequivalent N sites. In the first N site, N(2) is bonded in a distorted T-shaped geometry to one Ga(1) and two equivalent Si(1) atoms. In the second N site, N(1) is bonded in a trigonal planar geometry to three equivalent Si(1) atoms.
GaSi2N3 crystallizes in the orthorhombic Cmc2_1 space group. Ga(1) is bonded in a single-bond geometry to one N(2) atom. The Ga(1)-N(2) bond length is 2.18 Å. Si(1) is bonded to one N(2) and three equivalent N(1) atoms to form corner-sharing SiN4 tetrahedra. The Si(1)-N(2) bond length is 1.69 Å. There is one shorter (1.77 Å) and two longer (1.80 Å) Si(1)-N(1) bond lengths. There are two inequivalent N sites. In the first N site, N(2) is bonded in a distorted T-shaped geometry to one Ga(1) and two equivalent Si(1) atoms. In the second N site, N(1) is bonded in a trigonal planar geometry to three equivalent Si(1) atoms.