In3GaN4 is Enargite-like structured and crystallizes in the hexagonal P6_3mc space group. In(1) is bonded to one N(2) and three equivalent N(1) atoms to form InN4 tetrahedra that share corners with four equivalent Ga(1)N4 tetrahedra and corners with eight equivalent In(1)N4 tetrahedra. Ga(1) is bonded to one N(2) and three equivalent N(1) atoms to form GaN4 tetrahedra that share corners with twelve equivalent In(1)N4 tetrahedra. There are two inequivalent N sites. In the first N site, N(1) is bonded to three equivalent In(1) and one Ga(1) atom to form corner-sharing NIn3Ga tetrahedra. In the second N site, N(2) is bonded to three equivalent In(1) and one Ga(1) atom to form corner-sharing NIn3Ga tetrahedra.
In3GaN4 is Enargite-like structured and crystallizes in the hexagonal P6_3mc space group. In(1) is bonded to one N(2) and three equivalent N(1) atoms to form InN4 tetrahedra that share corners with four equivalent Ga(1)N4 tetrahedra and corners with eight equivalent In(1)N4 tetrahedra. The In(1)-N(2) bond length is 2.16 Å. All In(1)-N(1) bond lengths are 2.19 Å. Ga(1) is bonded to one N(2) and three equivalent N(1) atoms to form GaN4 tetrahedra that share corners with twelve equivalent In(1)N4 tetrahedra. The Ga(1)-N(2) bond length is 1.97 Å. All Ga(1)-N(1) bond lengths are 1.99 Å. There are two inequivalent N sites. In the first N site, N(1) is bonded to three equivalent In(1) and one Ga(1) atom to form corner-sharing NIn3Ga tetrahedra. In the second N site, N(2) is bonded to three equivalent In(1) and one Ga(1) atom to form corner-sharing NIn3Ga tetrahedra.