Rb6Si10O23 crystallizes in the orthorhombic Amm2 space group. There are four inequivalent Rb sites. In the first Rb site, Rb(1) is bonded in a 9-coordinate geometry to one O(7), two equivalent O(1), two equivalent O(4), two equivalent O(5), and two equivalent O(6) atoms. In the second Rb site, Rb(2) is bonded in a 9-coordinate geometry to one O(7), four equivalent O(2), and four equivalent O(5) atoms. In the third Rb site, Rb(3) is bonded in a 10-coordinate geometry to two equivalent O(8), four equivalent O(2), and four equivalent O(5) atoms. In the fourth Rb site, Rb(4) is bonded in a 7-coordinate geometry to one O(8), two equivalent O(3), two equivalent O(4), and two equivalent O(5) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(4), one O(7), and two equivalent O(2) atoms to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(1), one O(2), one O(3), and one O(8) atom to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(1), one O(3), one O(5), and one O(6) atom to form corner-sharing SiO4 tetrahedra. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a distorted bent 120 degrees geometry to one Rb(1), one Si(2), and one Si(3) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Rb(2), one Rb(3), one Si(1), and one Si(2) atom. In the third O site, O(3) is bonded in a distorted bent 120 degrees geometry to one Rb(4), one Si(2), and one Si(3) atom. In the fourth O site, O(4) is bonded in a distorted single-bond geometry to two equivalent Rb(1), two equivalent Rb(4), and one Si(1) atom. In the fifth O site, O(5) is bonded in a distorted single-bond geometry to one Rb(1), one Rb(2), one Rb(3), one Rb(4), and one Si(3) atom. In the sixth O site, O(6) is bonded in a distorted bent 150 degrees geometry to two equivalent Rb(1) and two equivalent Si(3) atoms. In the seventh O site, O(7) is bonded in a distorted linear geometry to one Rb(2), two equivalent Rb(1), and two equivalent Si(1) atoms. In the eighth O site, O(8) is bonded in a bent 150 degrees geometry to one Rb(3), one Rb(4), and two equivalent Si(2) atoms.
Rb6Si10O23 crystallizes in the orthorhombic Amm2 space group. There are four inequivalent Rb sites. In the first Rb site, Rb(1) is bonded in a 9-coordinate geometry to one O(7), two equivalent O(1), two equivalent O(4), two equivalent O(5), and two equivalent O(6) atoms. The Rb(1)-O(7) bond length is 3.45 Å. Both Rb(1)-O(1) bond lengths are 3.17 Å. Both Rb(1)-O(4) bond lengths are 3.07 Å. Both Rb(1)-O(5) bond lengths are 3.05 Å. There is one shorter (3.09 Å) and one longer (3.26 Å) Rb(1)-O(6) bond length. In the second Rb site, Rb(2) is bonded in a 9-coordinate geometry to one O(7), four equivalent O(2), and four equivalent O(5) atoms. The Rb(2)-O(7) bond length is 3.11 Å. All Rb(2)-O(2) bond lengths are 3.47 Å. All Rb(2)-O(5) bond lengths are 3.01 Å. In the third Rb site, Rb(3) is bonded in a 10-coordinate geometry to two equivalent O(8), four equivalent O(2), and four equivalent O(5) atoms. Both Rb(3)-O(8) bond lengths are 3.35 Å. All Rb(3)-O(2) bond lengths are 3.28 Å. All Rb(3)-O(5) bond lengths are 3.07 Å. In the fourth Rb site, Rb(4) is bonded in a 7-coordinate geometry to one O(8), two equivalent O(3), two equivalent O(4), and two equivalent O(5) atoms. The Rb(4)-O(8) bond length is 3.41 Å. Both Rb(4)-O(3) bond lengths are 3.26 Å. Both Rb(4)-O(4) bond lengths are 3.02 Å. Both Rb(4)-O(5) bond lengths are 3.06 Å. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(4), one O(7), and two equivalent O(2) atoms to form corner-sharing SiO4 tetrahedra. The Si(1)-O(4) bond length is 1.57 Å. The Si(1)-O(7) bond length is 1.64 Å. Both Si(1)-O(2) bond lengths are 1.64 Å. In the second Si site, Si(2) is bonded to one O(1), one O(2), one O(3), and one O(8) atom to form corner-sharing SiO4 tetrahedra. The Si(2)-O(1) bond length is 1.61 Å. The Si(2)-O(2) bond length is 1.60 Å. The Si(2)-O(3) bond length is 1.61 Å. The Si(2)-O(8) bond length is 1.62 Å. In the third Si site, Si(3) is bonded to one O(1), one O(3), one O(5), and one O(6) atom to form corner-sharing SiO4 tetrahedra. The Si(3)-O(1) bond length is 1.65 Å. The Si(3)-O(3) bond length is 1.65 Å. The Si(3)-O(5) bond length is 1.57 Å. The Si(3)-O(6) bond length is 1.64 Å. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a distorted bent 120 degrees geometry to one Rb(1), one Si(2), and one Si(3) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Rb(2), one Rb(3), one Si(1), and one Si(2) atom. In the third O site, O(3) is bonded in a distorted bent 120 degrees geometry to one Rb(4), one Si(2), and one Si(3) atom. In the fourth O site, O(4) is bonded in a distorted single-bond geometry to two equivalent Rb(1), two equivalent Rb(4), and one Si(1) atom. In the fifth O site, O(5) is bonded in a distorted single-bond geometry to one Rb(1), one Rb(2), one Rb(3), one Rb(4), and one Si(3) atom. In the sixth O site, O(6) is bonded in a distorted bent 150 degrees geometry to two equivalent Rb(1) and two equivalent Si(3) atoms. In the seventh O site, O(7) is bonded in a distorted linear geometry to one Rb(2), two equivalent Rb(1), and two equivalent Si(1) atoms. In the eighth O site, O(8) is bonded in a bent 150 degrees geometry to one Rb(3), one Rb(4), and two equivalent Si(2) atoms.