Cr4GaS8 is beta indium sulfide-derived structured and crystallizes in the cubic F-43m space group. Cr(1) is bonded to three equivalent S(1) and three equivalent S(2) atoms to form CrS6 octahedra that share corners with three equivalent Ga(1)S4 tetrahedra and edges with six equivalent Cr(1)S6 octahedra. Ga(1) is bonded to four equivalent S(1) atoms to form GaS4 tetrahedra that share corners with twelve equivalent Cr(1)S6 octahedra. The corner-sharing octahedral tilt angles are 60°. There are two inequivalent S sites. In the first S site, S(1) is bonded to three equivalent Cr(1) and one Ga(1) atom to form a mixture of distorted corner and edge-sharing SCr3Ga tetrahedra. In the second S site, S(2) is bonded in a distorted T-shaped geometry to three equivalent Cr(1) atoms.
Cr4GaS8 is beta indium sulfide-derived structured and crystallizes in the cubic F-43m space group. Cr(1) is bonded to three equivalent S(1) and three equivalent S(2) atoms to form CrS6 octahedra that share corners with three equivalent Ga(1)S4 tetrahedra and edges with six equivalent Cr(1)S6 octahedra. All Cr(1)-S(1) bond lengths are 2.47 Å. All Cr(1)-S(2) bond lengths are 2.34 Å. Ga(1) is bonded to four equivalent S(1) atoms to form GaS4 tetrahedra that share corners with twelve equivalent Cr(1)S6 octahedra. The corner-sharing octahedral tilt angles are 60°. All Ga(1)-S(1) bond lengths are 2.29 Å. There are two inequivalent S sites. In the first S site, S(1) is bonded to three equivalent Cr(1) and one Ga(1) atom to form a mixture of distorted corner and edge-sharing SCr3Ga tetrahedra. In the second S site, S(2) is bonded in a distorted T-shaped geometry to three equivalent Cr(1) atoms.