Tb11Si4In6 crystallizes in the tetragonal I4/mmm space group. There are four inequivalent Tb sites. In the first Tb site, Tb(1) is bonded to four equivalent In(1), one Si(1), one Si(2), and one Si(3) atom to form a mixture of distorted edge, face, and corner-sharing TbIn4Si3 pentagonal bipyramids. In the second Tb site, Tb(2) is bonded in a 7-coordinate geometry to two equivalent In(1), two equivalent In(2), one Si(3), and two equivalent Si(1) atoms. In the third Tb site, Tb(3) is bonded in a 7-coordinate geometry to one In(2), two equivalent In(1), two equivalent Si(1), and two equivalent Si(2) atoms. In the fourth Tb site, Tb(4) is bonded in a 9-coordinate geometry to four equivalent In(1), four equivalent In(2), and one Si(2) atom. There are two inequivalent In sites. In the first In site, In(1) is bonded in a 10-coordinate geometry to one Tb(3), one Tb(4), two equivalent Tb(2), four equivalent Tb(1), one In(1), and one In(2) atom. In the second In site, In(2) is bonded in a 11-coordinate geometry to one Tb(3), two equivalent Tb(4), four equivalent Tb(2), two equivalent In(1), and two equivalent In(2) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a 8-coordinate geometry to two equivalent Tb(1), two equivalent Tb(3), and four equivalent Tb(2) atoms. In the second Si site, Si(2) is bonded in a 9-coordinate geometry to one Tb(4), four equivalent Tb(1), and four equivalent Tb(3) atoms. In the third Si site, Si(3) is bonded in a 8-coordinate geometry to four equivalent Tb(1) and four equivalent Tb(2) atoms.
Tb11Si4In6 crystallizes in the tetragonal I4/mmm space group. There are four inequivalent Tb sites. In the first Tb site, Tb(1) is bonded to four equivalent In(1), one Si(1), one Si(2), and one Si(3) atom to form a mixture of distorted edge, face, and corner-sharing TbIn4Si3 pentagonal bipyramids. There are two shorter (3.37 Å) and two longer (3.45 Å) Tb(1)-In(1) bond lengths. The Tb(1)-Si(1) bond length is 3.20 Å. The Tb(1)-Si(2) bond length is 3.09 Å. The Tb(1)-Si(3) bond length is 3.08 Å. In the second Tb site, Tb(2) is bonded in a 7-coordinate geometry to two equivalent In(1), two equivalent In(2), one Si(3), and two equivalent Si(1) atoms. Both Tb(2)-In(1) bond lengths are 3.11 Å. Both Tb(2)-In(2) bond lengths are 3.36 Å. The Tb(2)-Si(3) bond length is 3.00 Å. Both Tb(2)-Si(1) bond lengths are 2.99 Å. In the third Tb site, Tb(3) is bonded in a 7-coordinate geometry to one In(2), two equivalent In(1), two equivalent Si(1), and two equivalent Si(2) atoms. The Tb(3)-In(2) bond length is 3.33 Å. Both Tb(3)-In(1) bond lengths are 3.48 Å. Both Tb(3)-Si(1) bond lengths are 2.83 Å. Both Tb(3)-Si(2) bond lengths are 3.33 Å. In the fourth Tb site, Tb(4) is bonded in a 9-coordinate geometry to four equivalent In(1), four equivalent In(2), and one Si(2) atom. All Tb(4)-In(1) bond lengths are 3.36 Å. All Tb(4)-In(2) bond lengths are 3.46 Å. The Tb(4)-Si(2) bond length is 3.50 Å. There are two inequivalent In sites. In the first In site, In(1) is bonded in a 10-coordinate geometry to one Tb(3), one Tb(4), two equivalent Tb(2), four equivalent Tb(1), one In(1), and one In(2) atom. The In(1)-In(1) bond length is 2.94 Å. The In(1)-In(2) bond length is 3.06 Å. In the second In site, In(2) is bonded in a 11-coordinate geometry to one Tb(3), two equivalent Tb(4), four equivalent Tb(2), two equivalent In(1), and two equivalent In(2) atoms. Both In(2)-In(2) bond lengths are 2.99 Å. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a 8-coordinate geometry to two equivalent Tb(1), two equivalent Tb(3), and four equivalent Tb(2) atoms. In the second Si site, Si(2) is bonded in a 9-coordinate geometry to one Tb(4), four equivalent Tb(1), and four equivalent Tb(3) atoms. In the third Si site, Si(3) is bonded in a 8-coordinate geometry to four equivalent Tb(1) and four equivalent Tb(2) atoms.