Li(SiO2)6 crystallizes in the triclinic P1 space group. Li(1) is bonded in a 4-coordinate geometry to one O(1), one O(2), one O(5), and one O(9) atom. There are six inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(10), one O(3), one O(5), and one O(9) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(10), one O(4), one O(6), and one O(9) atom to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(1), one O(12), one O(7), and one O(8) atom to form corner-sharing SiO4 tetrahedra. In the fourth Si site, Si(4) is bonded to one O(11), one O(2), one O(7), and one O(8) atom to form corner-sharing SiO4 tetrahedra. In the fifth Si site, Si(5) is bonded to one O(1), one O(2), one O(5), and one O(6) atom to form corner-sharing SiO4 trigonal pyramids. In the sixth Si site, Si(6) is bonded to one O(11), one O(12), one O(3), and one O(4) atom to form corner-sharing SiO4 tetrahedra. There are twelve inequivalent O sites. In the first O site, O(1) is bonded in a distorted trigonal planar geometry to one Li(1), one Si(3), and one Si(5) atom. In the second O site, O(2) is bonded in a distorted trigonal planar geometry to one Li(1), one Si(4), and one Si(5) atom. In the third O site, O(3) is bonded in a distorted bent 150 degrees geometry to one Si(1) and one Si(6) atom. In the fourth O site, O(4) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(6) atom. In the fifth O site, O(5) is bonded in a distorted T-shaped geometry to one Li(1), one Si(1), and one Si(5) atom. In the sixth O site, O(6) is bonded in a distorted bent 150 degrees geometry to one Si(2) and one Si(5) atom. In the seventh O site, O(7) is bonded in a linear geometry to one Si(3) and one Si(4) atom. In the eighth O site, O(8) is bonded in a linear geometry to one Si(3) and one Si(4) atom. In the ninth O site, O(9) is bonded in a 3-coordinate geometry to one Li(1), one Si(1), and one Si(2) atom. In the tenth O site, O(10) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the eleventh O site, O(11) is bonded in a bent 150 degrees geometry to one Si(4) and one Si(6) atom. In the twelfth O site, O(12) is bonded in a bent 150 degrees geometry to one Si(3) and one Si(6) atom.
Li(SiO2)6 crystallizes in the triclinic P1 space group. Li(1) is bonded in a 4-coordinate geometry to one O(1), one O(2), one O(5), and one O(9) atom. The Li(1)-O(1) bond length is 1.95 Å. The Li(1)-O(2) bond length is 1.90 Å. The Li(1)-O(5) bond length is 1.94 Å. The Li(1)-O(9) bond length is 2.22 Å. There are six inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(10), one O(3), one O(5), and one O(9) atom to form corner-sharing SiO4 tetrahedra. The Si(1)-O(10) bond length is 1.63 Å. The Si(1)-O(3) bond length is 1.62 Å. The Si(1)-O(5) bond length is 1.64 Å. The Si(1)-O(9) bond length is 1.64 Å. In the second Si site, Si(2) is bonded to one O(10), one O(4), one O(6), and one O(9) atom to form corner-sharing SiO4 tetrahedra. The Si(2)-O(10) bond length is 1.64 Å. The Si(2)-O(4) bond length is 1.62 Å. The Si(2)-O(6) bond length is 1.62 Å. The Si(2)-O(9) bond length is 1.65 Å. In the third Si site, Si(3) is bonded to one O(1), one O(12), one O(7), and one O(8) atom to form corner-sharing SiO4 tetrahedra. The Si(3)-O(1) bond length is 1.64 Å. The Si(3)-O(12) bond length is 1.64 Å. The Si(3)-O(7) bond length is 1.62 Å. The Si(3)-O(8) bond length is 1.62 Å. In the fourth Si site, Si(4) is bonded to one O(11), one O(2), one O(7), and one O(8) atom to form corner-sharing SiO4 tetrahedra. The Si(4)-O(11) bond length is 1.63 Å. The Si(4)-O(2) bond length is 1.65 Å. The Si(4)-O(7) bond length is 1.62 Å. The Si(4)-O(8) bond length is 1.62 Å. In the fifth Si site, Si(5) is bonded to one O(1), one O(2), one O(5), and one O(6) atom to form corner-sharing SiO4 trigonal pyramids. The Si(5)-O(1) bond length is 1.75 Å. The Si(5)-O(2) bond length is 1.75 Å. The Si(5)-O(5) bond length is 1.71 Å. The Si(5)-O(6) bond length is 1.71 Å. In the sixth Si site, Si(6) is bonded to one O(11), one O(12), one O(3), and one O(4) atom to form corner-sharing SiO4 tetrahedra. The Si(6)-O(11) bond length is 1.62 Å. The Si(6)-O(12) bond length is 1.63 Å. The Si(6)-O(3) bond length is 1.64 Å. The Si(6)-O(4) bond length is 1.62 Å. There are twelve inequivalent O sites. In the first O site, O(1) is bonded in a distorted trigonal planar geometry to one Li(1), one Si(3), and one Si(5) atom. In the second O site, O(2) is bonded in a distorted trigonal planar geometry to one Li(1), one Si(4), and one Si(5) atom. In the third O site, O(3) is bonded in a distorted bent 150 degrees geometry to one Si(1) and one Si(6) atom. In the fourth O site, O(4) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(6) atom. In the fifth O site, O(5) is bonded in a distorted T-shaped geometry to one Li(1), one Si(1), and one Si(5) atom. In the sixth O site, O(6) is bonded in a distorted bent 150 degrees geometry to one Si(2) and one Si(5) atom. In the seventh O site, O(7) is bonded in a linear geometry to one Si(3) and one Si(4) atom. In the eighth O site, O(8) is bonded in a linear geometry to one Si(3) and one Si(4) atom. In the ninth O site, O(9) is bonded in a 3-coordinate geometry to one Li(1), one Si(1), and one Si(2) atom. In the tenth O site, O(10) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the eleventh O site, O(11) is bonded in a bent 150 degrees geometry to one Si(4) and one Si(6) atom. In the twelfth O site, O(12) is bonded in a bent 150 degrees geometry to one Si(3) and one Si(6) atom.