SiC is Moissanite-6H-like structured and crystallizes in the hexagonal P6_3mc space group. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one C(4) and three equivalent C(1) atoms to form corner-sharing SiC4 tetrahedra. In the second Si site, Si(2) is bonded to one C(2) and three equivalent C(3) atoms to form corner-sharing SiC4 tetrahedra. In the third Si site, Si(3) is bonded to one C(3) and three equivalent C(4) atoms to form corner-sharing SiC4 tetrahedra. In the fourth Si site, Si(4) is bonded to one C(1) and three equivalent C(2) atoms to form corner-sharing SiC4 tetrahedra. There are four inequivalent C sites. In the first C site, C(1) is bonded to one Si(4) and three equivalent Si(1) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(2) is bonded to one Si(2) and three equivalent Si(4) atoms to form corner-sharing CSi4 tetrahedra. In the third C site, C(3) is bonded to one Si(3) and three equivalent Si(2) atoms to form corner-sharing CSi4 tetrahedra. In the fourth C site, C(4) is bonded to one Si(1) and three equivalent Si(3) atoms to form corner-sharing CSi4 tetrahedra.
SiC is Moissanite-6H-like structured and crystallizes in the hexagonal P6_3mc space group. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one C(4) and three equivalent C(1) atoms to form corner-sharing SiC4 tetrahedra. The Si(1)-C(4) bond length is 1.89 Å. All Si(1)-C(1) bond lengths are 1.88 Å. In the second Si site, Si(2) is bonded to one C(2) and three equivalent C(3) atoms to form corner-sharing SiC4 tetrahedra. The Si(2)-C(2) bond length is 1.89 Å. All Si(2)-C(3) bond lengths are 1.88 Å. In the third Si site, Si(3) is bonded to one C(3) and three equivalent C(4) atoms to form corner-sharing SiC4 tetrahedra. The Si(3)-C(3) bond length is 1.89 Å. All Si(3)-C(4) bond lengths are 1.88 Å. In the fourth Si site, Si(4) is bonded to one C(1) and three equivalent C(2) atoms to form corner-sharing SiC4 tetrahedra. The Si(4)-C(1) bond length is 1.89 Å. All Si(4)-C(2) bond lengths are 1.89 Å. There are four inequivalent C sites. In the first C site, C(1) is bonded to one Si(4) and three equivalent Si(1) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(2) is bonded to one Si(2) and three equivalent Si(4) atoms to form corner-sharing CSi4 tetrahedra. In the third C site, C(3) is bonded to one Si(3) and three equivalent Si(2) atoms to form corner-sharing CSi4 tetrahedra. In the fourth C site, C(4) is bonded to one Si(1) and three equivalent Si(3) atoms to form corner-sharing CSi4 tetrahedra.