BaGaSiH crystallizes in the trigonal P3m1 space group. Ba(1) is bonded in a distorted trigonal non-coplanar geometry to three equivalent Si(1) and three equivalent H(1) atoms. Ga(1) is bonded in a distorted single-bond geometry to three equivalent Si(1) and one H(1) atom. Si(1) is bonded in a 6-coordinate geometry to three equivalent Ba(1) and three equivalent Ga(1) atoms. H(1) is bonded to three equivalent Ba(1) and one Ga(1) atom to form corner-sharing HBa3Ga tetrahedra.
BaGaSiH crystallizes in the trigonal P3m1 space group. Ba(1) is bonded in a distorted trigonal non-coplanar geometry to three equivalent Si(1) and three equivalent H(1) atoms. All Ba(1)-Si(1) bond lengths are 3.46 Å. All Ba(1)-H(1) bond lengths are 2.56 Å. Ga(1) is bonded in a distorted single-bond geometry to three equivalent Si(1) and one H(1) atom. All Ga(1)-Si(1) bond lengths are 2.51 Å. The Ga(1)-H(1) bond length is 1.74 Å. Si(1) is bonded in a 6-coordinate geometry to three equivalent Ba(1) and three equivalent Ga(1) atoms. H(1) is bonded to three equivalent Ba(1) and one Ga(1) atom to form corner-sharing HBa3Ga tetrahedra.