RuSi7N10 crystallizes in the monoclinic Pc space group. Ru(1) is bonded in a 4-coordinate geometry to one N(1), one N(3), one N(4), and one N(7) atom. There are seven inequivalent Si sites. In the first Si site, Si(1) is bonded to one N(1), one N(2), one N(3), and one N(6) atom to form a mixture of edge and corner-sharing SiN4 tetrahedra. In the second Si site, Si(2) is bonded to one N(2), one N(3), one N(4), and one N(6) atom to form a mixture of edge and corner-sharing SiN4 tetrahedra. In the third Si site, Si(3) is bonded to one N(4), one N(5), one N(7), and one N(8) atom to form corner-sharing SiN4 tetrahedra. In the fourth Si site, Si(4) is bonded to one N(10), one N(2), one N(7), and one N(9) atom to form corner-sharing SiN4 tetrahedra. In the fifth Si site, Si(5) is bonded to one N(1), one N(7), one N(8), and one N(9) atom to form corner-sharing SiN4 tetrahedra. In the sixth Si site, Si(6) is bonded to one N(10), one N(3), one N(5), and one N(8) atom to form corner-sharing SiN4 tetrahedra. In the seventh Si site, Si(7) is bonded to one N(10), one N(5), one N(6), and one N(9) atom to form corner-sharing SiN4 tetrahedra. There are ten inequivalent N sites. In the first N site, N(9) is bonded in a trigonal planar geometry to one Si(4), one Si(5), and one Si(7) atom. In the second N site, N(10) is bonded in a trigonal planar geometry to one Si(4), one Si(6), and one Si(7) atom. In the third N site, N(1) is bonded in a 3-coordinate geometry to one Ru(1), one Si(1), and one Si(5) atom. In the fourth N site, N(2) is bonded in a distorted trigonal planar geometry to one Si(1), one Si(2), and one Si(4) atom. In the fifth N site, N(3) is bonded in a 4-coordinate geometry to one Ru(1), one Si(1), one Si(2), and one Si(6) atom. In the sixth N site, N(4) is bonded in a 3-coordinate geometry to one Ru(1), one Si(2), and one Si(3) atom. In the seventh N site, N(5) is bonded in a trigonal planar geometry to one Si(3), one Si(6), and one Si(7) atom. In the eighth N site, N(6) is bonded in a trigonal planar geometry to one Si(1), one Si(2), and one Si(7) atom. In the ninth N site, N(7) is bonded in a distorted tetrahedral geometry to one Ru(1), one Si(3), one Si(4), and one Si(5) atom. In the tenth N site, N(8) is bonded in a trigonal planar geometry to one Si(3), one Si(5), and one Si(6) atom.
RuSi7N10 crystallizes in the monoclinic Pc space group. Ru(1) is bonded in a 4-coordinate geometry to one N(1), one N(3), one N(4), and one N(7) atom. The Ru(1)-N(1) bond length is 2.26 Å. The Ru(1)-N(3) bond length is 2.22 Å. The Ru(1)-N(4) bond length is 2.16 Å. The Ru(1)-N(7) bond length is 2.11 Å. There are seven inequivalent Si sites. In the first Si site, Si(1) is bonded to one N(1), one N(2), one N(3), and one N(6) atom to form a mixture of edge and corner-sharing SiN4 tetrahedra. The Si(1)-N(1) bond length is 1.69 Å. The Si(1)-N(2) bond length is 1.76 Å. The Si(1)-N(3) bond length is 1.87 Å. The Si(1)-N(6) bond length is 1.75 Å. In the second Si site, Si(2) is bonded to one N(2), one N(3), one N(4), and one N(6) atom to form a mixture of edge and corner-sharing SiN4 tetrahedra. The Si(2)-N(2) bond length is 1.76 Å. The Si(2)-N(3) bond length is 1.82 Å. The Si(2)-N(4) bond length is 1.69 Å. The Si(2)-N(6) bond length is 1.74 Å. In the third Si site, Si(3) is bonded to one N(4), one N(5), one N(7), and one N(8) atom to form corner-sharing SiN4 tetrahedra. The Si(3)-N(4) bond length is 1.71 Å. The Si(3)-N(5) bond length is 1.74 Å. The Si(3)-N(7) bond length is 1.79 Å. The Si(3)-N(8) bond length is 1.74 Å. In the fourth Si site, Si(4) is bonded to one N(10), one N(2), one N(7), and one N(9) atom to form corner-sharing SiN4 tetrahedra. The Si(4)-N(10) bond length is 1.73 Å. The Si(4)-N(2) bond length is 1.71 Å. The Si(4)-N(7) bond length is 1.77 Å. The Si(4)-N(9) bond length is 1.74 Å. In the fifth Si site, Si(5) is bonded to one N(1), one N(7), one N(8), and one N(9) atom to form corner-sharing SiN4 tetrahedra. The Si(5)-N(1) bond length is 1.70 Å. The Si(5)-N(7) bond length is 1.84 Å. The Si(5)-N(8) bond length is 1.75 Å. The Si(5)-N(9) bond length is 1.75 Å. In the sixth Si site, Si(6) is bonded to one N(10), one N(3), one N(5), and one N(8) atom to form corner-sharing SiN4 tetrahedra. The Si(6)-N(10) bond length is 1.75 Å. The Si(6)-N(3) bond length is 1.76 Å. The Si(6)-N(5) bond length is 1.72 Å. The Si(6)-N(8) bond length is 1.73 Å. In the seventh Si site, Si(7) is bonded to one N(10), one N(5), one N(6), and one N(9) atom to form corner-sharing SiN4 tetrahedra. The Si(7)-N(10) bond length is 1.74 Å. The Si(7)-N(5) bond length is 1.74 Å. The Si(7)-N(6) bond length is 1.73 Å. The Si(7)-N(9) bond length is 1.73 Å. There are ten inequivalent N sites. In the first N site, N(9) is bonded in a trigonal planar geometry to one Si(4), one Si(5), and one Si(7) atom. In the second N site, N(10) is bonded in a trigonal planar geometry to one Si(4), one Si(6), and one Si(7) atom. In the third N site, N(1) is bonded in a 3-coordinate geometry to one Ru(1), one Si(1), and one Si(5) atom. In the fourth N site, N(2) is bonded in a distorted trigonal planar geometry to one Si(1), one Si(2), and one Si(4) atom. In the fifth N site, N(3) is bonded in a 4-coordinate geometry to one Ru(1), one Si(1), one Si(2), and one Si(6) atom. In the sixth N site, N(4) is bonded in a 3-coordinate geometry to one Ru(1), one Si(2), and one Si(3) atom. In the seventh N site, N(5) is bonded in a trigonal planar geometry to one Si(3), one Si(6), and one Si(7) atom. In the eighth N site, N(6) is bonded in a trigonal planar geometry to one Si(1), one Si(2), and one Si(7) atom. In the ninth N site, N(7) is bonded in a distorted tetrahedral geometry to one Ru(1), one Si(3), one Si(4), and one Si(5) atom. In the tenth N site, N(8) is bonded in a trigonal planar geometry to one Si(3), one Si(5), and one Si(6) atom.