Ti4GaS8 is beta indium sulfide-derived structured and crystallizes in the cubic F-43m space group. Ti(1) is bonded to three equivalent S(1) and three equivalent S(2) atoms to form TiS6 octahedra that share corners with three equivalent Ga(1)S4 tetrahedra and edges with six equivalent Ti(1)S6 octahedra. Ga(1) is bonded to four equivalent S(2) atoms to form GaS4 tetrahedra that share corners with twelve equivalent Ti(1)S6 octahedra. The corner-sharing octahedral tilt angles are 61°. There are two inequivalent S sites. In the first S site, S(1) is bonded in a distorted T-shaped geometry to three equivalent Ti(1) atoms. In the second S site, S(2) is bonded to three equivalent Ti(1) and one Ga(1) atom to form a mixture of distorted corner and edge-sharing STi3Ga tetrahedra.
Ti4GaS8 is beta indium sulfide-derived structured and crystallizes in the cubic F-43m space group. Ti(1) is bonded to three equivalent S(1) and three equivalent S(2) atoms to form TiS6 octahedra that share corners with three equivalent Ga(1)S4 tetrahedra and edges with six equivalent Ti(1)S6 octahedra. All Ti(1)-S(1) bond lengths are 2.38 Å. All Ti(1)-S(2) bond lengths are 2.56 Å. Ga(1) is bonded to four equivalent S(2) atoms to form GaS4 tetrahedra that share corners with twelve equivalent Ti(1)S6 octahedra. The corner-sharing octahedral tilt angles are 61°. All Ga(1)-S(2) bond lengths are 2.30 Å. There are two inequivalent S sites. In the first S site, S(1) is bonded in a distorted T-shaped geometry to three equivalent Ti(1) atoms. In the second S site, S(2) is bonded to three equivalent Ti(1) and one Ga(1) atom to form a mixture of distorted corner and edge-sharing STi3Ga tetrahedra.