Ho3CuSiS7 crystallizes in the hexagonal P6_3 space group. Ho(1) is bonded in a 8-coordinate geometry to one S(3), three equivalent S(1), and four equivalent S(2) atoms. Cu(1) is bonded in a trigonal planar geometry to three equivalent S(2) atoms. Si(1) is bonded in a tetrahedral geometry to one S(3) and three equivalent S(1) atoms. There are three inequivalent S sites. In the first S site, S(1) is bonded in a distorted rectangular see-saw-like geometry to three equivalent Ho(1) and one Si(1) atom. In the second S site, S(2) is bonded in a 5-coordinate geometry to four equivalent Ho(1) and one Cu(1) atom. In the third S site, S(3) is bonded in a distorted tetrahedral geometry to three equivalent Ho(1) and one Si(1) atom.
Ho3CuSiS7 crystallizes in the hexagonal P6_3 space group. Ho(1) is bonded in a 8-coordinate geometry to one S(3), three equivalent S(1), and four equivalent S(2) atoms. The Ho(1)-S(3) bond length is 2.96 Å. There are a spread of Ho(1)-S(1) bond distances ranging from 2.78-3.00 Å. There are a spread of Ho(1)-S(2) bond distances ranging from 2.75-3.15 Å. Cu(1) is bonded in a trigonal planar geometry to three equivalent S(2) atoms. All Cu(1)-S(2) bond lengths are 2.24 Å. Si(1) is bonded in a tetrahedral geometry to one S(3) and three equivalent S(1) atoms. The Si(1)-S(3) bond length is 2.11 Å. All Si(1)-S(1) bond lengths are 2.15 Å. There are three inequivalent S sites. In the first S site, S(1) is bonded in a distorted rectangular see-saw-like geometry to three equivalent Ho(1) and one Si(1) atom. In the second S site, S(2) is bonded in a 5-coordinate geometry to four equivalent Ho(1) and one Cu(1) atom. In the third S site, S(3) is bonded in a distorted tetrahedral geometry to three equivalent Ho(1) and one Si(1) atom.