LiGaSiO4 crystallizes in the trigonal R3 space group. There are two inequivalent Li sites. In the first Li site, Li(1) is bonded to one O(1), one O(2), one O(6), and one O(7) atom to form LiO4 tetrahedra that share corners with two equivalent Ga(1)O4 tetrahedra, corners with two equivalent Ga(2)O4 tetrahedra, corners with two equivalent Si(1)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. In the second Li site, Li(2) is bonded to one O(3), one O(4), one O(5), and one O(8) atom to form LiO4 tetrahedra that share corners with two equivalent Ga(1)O4 tetrahedra, corners with two equivalent Ga(2)O4 tetrahedra, corners with two equivalent Si(1)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(2), one O(4), one O(6), and one O(8) atom to form GaO4 tetrahedra that share corners with two equivalent Li(1)O4 tetrahedra, corners with two equivalent Li(2)O4 tetrahedra, corners with two equivalent Si(1)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. In the second Ga site, Ga(2) is bonded to one O(1), one O(3), one O(5), and one O(7) atom to form GaO4 tetrahedra that share corners with two equivalent Li(1)O4 tetrahedra, corners with two equivalent Li(2)O4 tetrahedra, corners with two equivalent Si(1)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(3), one O(4), one O(6), and one O(7) atom to form SiO4 tetrahedra that share corners with two equivalent Li(1)O4 tetrahedra, corners with two equivalent Li(2)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra, and corners with two equivalent Ga(2)O4 tetrahedra. In the second Si site, Si(2) is bonded to one O(1), one O(2), one O(5), and one O(8) atom to form SiO4 tetrahedra that share corners with two equivalent Li(1)O4 tetrahedra, corners with two equivalent Li(2)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra, and corners with two equivalent Ga(2)O4 tetrahedra. There are eight inequivalent O sites. In the first O site, O(5) is bonded in a trigonal planar geometry to one Li(2), one Ga(2), and one Si(2) atom. In the second O site, O(6) is bonded in a trigonal planar geometry to one Li(1), one Ga(1), and one Si(1) atom. In the third O site, O(7) is bonded in a trigonal planar geometry to one Li(1), one Ga(2), and one Si(1) atom. In the fourth O site, O(8) is bonded in a trigonal planar geometry to one Li(2), one Ga(1), and one Si(2) atom. In the fifth O site, O(1) is bonded in a trigonal planar geometry to one Li(1), one Ga(2), and one Si(2) atom. In the sixth O site, O(2) is bonded in a trigonal planar geometry to one Li(1), one Ga(1), and one Si(2) atom. In the seventh O site, O(3) is bonded in a trigonal planar geometry to one Li(2), one Ga(2), and one Si(1) atom. In the eighth O site, O(4) is bonded in a trigonal planar geometry to one Li(2), one Ga(1), and one Si(1) atom.
LiGaSiO4 crystallizes in the trigonal R3 space group. There are two inequivalent Li sites. In the first Li site, Li(1) is bonded to one O(1), one O(2), one O(6), and one O(7) atom to form LiO4 tetrahedra that share corners with two equivalent Ga(1)O4 tetrahedra, corners with two equivalent Ga(2)O4 tetrahedra, corners with two equivalent Si(1)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. The Li(1)-O(1) bond length is 2.00 Å. The Li(1)-O(2) bond length is 1.96 Å. The Li(1)-O(6) bond length is 1.97 Å. The Li(1)-O(7) bond length is 1.96 Å. In the second Li site, Li(2) is bonded to one O(3), one O(4), one O(5), and one O(8) atom to form LiO4 tetrahedra that share corners with two equivalent Ga(1)O4 tetrahedra, corners with two equivalent Ga(2)O4 tetrahedra, corners with two equivalent Si(1)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. The Li(2)-O(3) bond length is 2.03 Å. The Li(2)-O(4) bond length is 1.96 Å. The Li(2)-O(5) bond length is 2.00 Å. The Li(2)-O(8) bond length is 1.97 Å. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(2), one O(4), one O(6), and one O(8) atom to form GaO4 tetrahedra that share corners with two equivalent Li(1)O4 tetrahedra, corners with two equivalent Li(2)O4 tetrahedra, corners with two equivalent Si(1)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. The Ga(1)-O(2) bond length is 1.86 Å. The Ga(1)-O(4) bond length is 1.85 Å. The Ga(1)-O(6) bond length is 1.85 Å. The Ga(1)-O(8) bond length is 1.85 Å. In the second Ga site, Ga(2) is bonded to one O(1), one O(3), one O(5), and one O(7) atom to form GaO4 tetrahedra that share corners with two equivalent Li(1)O4 tetrahedra, corners with two equivalent Li(2)O4 tetrahedra, corners with two equivalent Si(1)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. The Ga(2)-O(1) bond length is 1.85 Å. The Ga(2)-O(3) bond length is 1.87 Å. The Ga(2)-O(5) bond length is 1.86 Å. The Ga(2)-O(7) bond length is 1.86 Å. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(3), one O(4), one O(6), and one O(7) atom to form SiO4 tetrahedra that share corners with two equivalent Li(1)O4 tetrahedra, corners with two equivalent Li(2)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra, and corners with two equivalent Ga(2)O4 tetrahedra. The Si(1)-O(3) bond length is 1.66 Å. The Si(1)-O(4) bond length is 1.65 Å. The Si(1)-O(6) bond length is 1.64 Å. The Si(1)-O(7) bond length is 1.65 Å. In the second Si site, Si(2) is bonded to one O(1), one O(2), one O(5), and one O(8) atom to form SiO4 tetrahedra that share corners with two equivalent Li(1)O4 tetrahedra, corners with two equivalent Li(2)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra, and corners with two equivalent Ga(2)O4 tetrahedra. The Si(2)-O(1) bond length is 1.65 Å. The Si(2)-O(2) bond length is 1.65 Å. The Si(2)-O(5) bond length is 1.65 Å. The Si(2)-O(8) bond length is 1.65 Å. There are eight inequivalent O sites. In the first O site, O(5) is bonded in a trigonal planar geometry to one Li(2), one Ga(2), and one Si(2) atom. In the second O site, O(6) is bonded in a trigonal planar geometry to one Li(1), one Ga(1), and one Si(1) atom. In the third O site, O(7) is bonded in a trigonal planar geometry to one Li(1), one Ga(2), and one Si(1) atom. In the fourth O site, O(8) is bonded in a trigonal planar geometry to one Li(2), one Ga(1), and one Si(2) atom. In the fifth O site, O(1) is bonded in a trigonal planar geometry to one Li(1), one Ga(2), and one Si(2) atom. In the sixth O site, O(2) is bonded in a trigonal planar geometry to one Li(1), one Ga(1), and one Si(2) atom. In the seventh O site, O(3) is bonded in a trigonal planar geometry to one Li(2), one Ga(2), and one Si(1) atom. In the eighth O site, O(4) is bonded in a trigonal planar geometry to one Li(2), one Ga(1), and one Si(1) atom.