NaLi3Ga4(SiO3)8 is Esseneite-derived structured and crystallizes in the monoclinic C2 space group. Na(1) is bonded in a 6-coordinate geometry to two equivalent O(2), two equivalent O(8), and two equivalent O(9) atoms. There are two inequivalent Li sites. In the first Li site, Li(1) is bonded in a 6-coordinate geometry to two equivalent O(1), two equivalent O(10), and two equivalent O(7) atoms. In the second Li site, Li(2) is bonded in a 6-coordinate geometry to one O(11), one O(12), one O(3), one O(4), one O(5), and one O(6) atom. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent O(2), two equivalent O(4), and two equivalent O(5) atoms to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra, and edges with two equivalent Ga(3)O6 octahedra. In the second Ga site, Ga(2) is bonded to two equivalent O(1), two equivalent O(3), and two equivalent O(6) atoms to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, and edges with two equivalent Ga(3)O6 octahedra. In the third Ga site, Ga(3) is bonded to one O(1), one O(2), one O(3), one O(4), one O(7), and one O(8) atom to form GaO6 octahedra that share  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra,  an edgeedge with one Ga(1)O6 octahedra, and  an edgeedge with one Ga(2)O6 octahedra. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(11), one O(5), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(3)O6 octahedra,  a cornercorner with one Si(3)O4 tetrahedra, and  a cornercorner with one Si(4)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 37-60°. In the second Si site, Si(2) is bonded to one O(10), one O(12), one O(2), and one O(6) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(3)O6 octahedra,  a cornercorner with one Si(3)O4 tetrahedra, and  a cornercorner with one Si(4)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 38-58°. In the third Si site, Si(3) is bonded to one O(10), one O(11), one O(3), and one O(7) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra, and  a cornercorner with one Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 37-59°. In the fourth Si site, Si(4) is bonded to one O(12), one O(4), one O(8), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra, and  a cornercorner with one Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 35-60°. There are twelve inequivalent O sites. In the first O site, O(1) is bonded to one Li(1), one Ga(2), one Ga(3), and one Si(1) atom to form distorted OLiGa2Si tetrahedra that share  a cornercorner with one O(3)LiGa2Si tetrahedra,  a cornercorner with one O(4)LiGa2Si tetrahedra,  a cornercorner with one O(2)NaGa2Si tetrahedra,  an edgeedge with one O(1)LiGa2Si tetrahedra, and  an edgeedge with one O(3)LiGa2Si tetrahedra. In the second O site, O(2) is bonded to one Na(1), one Ga(1), one Ga(3), and one Si(2) atom to form distorted ONaGa2Si tetrahedra that share  a cornercorner with one O(1)LiGa2Si tetrahedra,  a cornercorner with one O(3)LiGa2Si tetrahedra,  a cornercorner with one O(4)LiGa2Si tetrahedra,  an edgeedge with one O(4)LiGa2Si tetrahedra, and  an edgeedge with one O(2)NaGa2Si tetrahedra. In the third O site, O(3) is bonded to one Li(2), one Ga(2), one Ga(3), and one Si(3) atom to form distorted OLiGa2Si tetrahedra that share  a cornercorner with one O(1)LiGa2Si tetrahedra,  a cornercorner with one O(3)LiGa2Si tetrahedra,  a cornercorner with one O(2)NaGa2Si tetrahedra,  an edgeedge with one O(1)LiGa2Si tetrahedra, and  an edgeedge with one O(4)LiGa2Si tetrahedra. In the fourth O site, O(4) is bonded to one Li(2), one Ga(1), one Ga(3), and one Si(4) atom to form distorted OLiGa2Si tetrahedra that share  a cornercorner with one O(1)LiGa2Si tetrahedra,  a cornercorner with one O(4)LiGa2Si tetrahedra,  a cornercorner with one O(2)NaGa2Si tetrahedra,  an edgeedge with one O(3)LiGa2Si tetrahedra, and  an edgeedge with one O(2)NaGa2Si tetrahedra. In the fifth O site, O(5) is bonded in a distorted T-shaped geometry to one Li(2), one Ga(1), and one Si(1) atom. In the sixth O site, O(6) is bonded in a distorted T-shaped geometry to one Li(2), one Ga(2), and one Si(2) atom. In the seventh O site, O(7) is bonded in a distorted T-shaped geometry to one Li(1), one Ga(3), and one Si(3) atom. In the eighth O site, O(8) is bonded in a distorted T-shaped geometry to one Na(1), one Ga(3), and one Si(4) atom. In the ninth O site, O(9) is bonded in a 3-coordinate geometry to one Na(1), one Si(1), and one Si(4) atom. In the tenth O site, O(10) is bonded in a 3-coordinate geometry to one Li(1), one Si(2), and one Si(3) atom. In the eleventh O site, O(11) is bonded in a 2-coordinate geometry to one Li(2), one Si(1), and one Si(3) atom. In the twelfth O site, O(12) is bonded in a 3-coordinate geometry to one Li(2), one Si(2), and one Si(4) atom.
NaLi3Ga4(SiO3)8 is Esseneite-derived structured and crystallizes in the monoclinic C2 space group. Na(1) is bonded in a 6-coordinate geometry to two equivalent O(2), two equivalent O(8), and two equivalent O(9) atoms. Both Na(1)-O(2) bond lengths are 2.36 Å. Both Na(1)-O(8) bond lengths are 2.35 Å. Both Na(1)-O(9) bond lengths are 2.37 Å. There are two inequivalent Li sites. In the first Li site, Li(1) is bonded in a 6-coordinate geometry to two equivalent O(1), two equivalent O(10), and two equivalent O(7) atoms. Both Li(1)-O(1) bond lengths are 2.13 Å. Both Li(1)-O(10) bond lengths are 2.47 Å. Both Li(1)-O(7) bond lengths are 2.22 Å. In the second Li site, Li(2) is bonded in a 6-coordinate geometry to one O(11), one O(12), one O(3), one O(4), one O(5), and one O(6) atom. The Li(2)-O(11) bond length is 2.50 Å. The Li(2)-O(12) bond length is 2.47 Å. The Li(2)-O(3) bond length is 2.14 Å. The Li(2)-O(4) bond length is 2.14 Å. The Li(2)-O(5) bond length is 2.21 Å. The Li(2)-O(6) bond length is 2.23 Å. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent O(2), two equivalent O(4), and two equivalent O(5) atoms to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra, and edges with two equivalent Ga(3)O6 octahedra. Both Ga(1)-O(2) bond lengths are 2.12 Å. Both Ga(1)-O(4) bond lengths are 2.01 Å. Both Ga(1)-O(5) bond lengths are 1.92 Å. In the second Ga site, Ga(2) is bonded to two equivalent O(1), two equivalent O(3), and two equivalent O(6) atoms to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, and edges with two equivalent Ga(3)O6 octahedra. Both Ga(2)-O(1) bond lengths are 2.13 Å. Both Ga(2)-O(3) bond lengths are 2.01 Å. Both Ga(2)-O(6) bond lengths are 1.92 Å. In the third Ga site, Ga(3) is bonded to one O(1), one O(2), one O(3), one O(4), one O(7), and one O(8) atom to form GaO6 octahedra that share  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra,  an edgeedge with one Ga(1)O6 octahedra, and  an edgeedge with one Ga(2)O6 octahedra. The Ga(3)-O(1) bond length is 2.02 Å. The Ga(3)-O(2) bond length is 2.00 Å. The Ga(3)-O(3) bond length is 2.13 Å. The Ga(3)-O(4) bond length is 2.12 Å. The Ga(3)-O(7) bond length is 1.92 Å. The Ga(3)-O(8) bond length is 1.93 Å. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(11), one O(5), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(3)O6 octahedra,  a cornercorner with one Si(3)O4 tetrahedra, and  a cornercorner with one Si(4)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 37-60°. The Si(1)-O(1) bond length is 1.66 Å. The Si(1)-O(11) bond length is 1.65 Å. The Si(1)-O(5) bond length is 1.61 Å. The Si(1)-O(9) bond length is 1.65 Å. In the second Si site, Si(2) is bonded to one O(10), one O(12), one O(2), and one O(6) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(3)O6 octahedra,  a cornercorner with one Si(3)O4 tetrahedra, and  a cornercorner with one Si(4)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 38-58°. The Si(2)-O(10) bond length is 1.64 Å. The Si(2)-O(12) bond length is 1.65 Å. The Si(2)-O(2) bond length is 1.66 Å. The Si(2)-O(6) bond length is 1.61 Å. In the third Si site, Si(3) is bonded to one O(10), one O(11), one O(3), and one O(7) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra, and  a cornercorner with one Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 37-59°. The Si(3)-O(10) bond length is 1.65 Å. The Si(3)-O(11) bond length is 1.65 Å. The Si(3)-O(3) bond length is 1.66 Å. The Si(3)-O(7) bond length is 1.61 Å. In the fourth Si site, Si(4) is bonded to one O(12), one O(4), one O(8), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra, and  a cornercorner with one Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 35-60°. The Si(4)-O(12) bond length is 1.64 Å. The Si(4)-O(4) bond length is 1.66 Å. The Si(4)-O(8) bond length is 1.61 Å. The Si(4)-O(9) bond length is 1.65 Å. There are twelve inequivalent O sites. In the first O site, O(1) is bonded to one Li(1), one Ga(2), one Ga(3), and one Si(1) atom to form distorted OLiGa2Si tetrahedra that share  a cornercorner with one O(3)LiGa2Si tetrahedra,  a cornercorner with one O(4)LiGa2Si tetrahedra,  a cornercorner with one O(2)NaGa2Si tetrahedra,  an edgeedge with one O(1)LiGa2Si tetrahedra, and  an edgeedge with one O(3)LiGa2Si tetrahedra. In the second O site, O(2) is bonded to one Na(1), one Ga(1), one Ga(3), and one Si(2) atom to form distorted ONaGa2Si tetrahedra that share  a cornercorner with one O(1)LiGa2Si tetrahedra,  a cornercorner with one O(3)LiGa2Si tetrahedra,  a cornercorner with one O(4)LiGa2Si tetrahedra,  an edgeedge with one O(4)LiGa2Si tetrahedra, and  an edgeedge with one O(2)NaGa2Si tetrahedra. In the third O site, O(3) is bonded to one Li(2), one Ga(2), one Ga(3), and one Si(3) atom to form distorted OLiGa2Si tetrahedra that share  a cornercorner with one O(1)LiGa2Si tetrahedra,  a cornercorner with one O(3)LiGa2Si tetrahedra,  a cornercorner with one O(2)NaGa2Si tetrahedra,  an edgeedge with one O(1)LiGa2Si tetrahedra, and  an edgeedge with one O(4)LiGa2Si tetrahedra. In the fourth O site, O(4) is bonded to one Li(2), one Ga(1), one Ga(3), and one Si(4) atom to form distorted OLiGa2Si tetrahedra that share  a cornercorner with one O(1)LiGa2Si tetrahedra,  a cornercorner with one O(4)LiGa2Si tetrahedra,  a cornercorner with one O(2)NaGa2Si tetrahedra,  an edgeedge with one O(3)LiGa2Si tetrahedra, and  an edgeedge with one O(2)NaGa2Si tetrahedra. In the fifth O site, O(5) is bonded in a distorted T-shaped geometry to one Li(2), one Ga(1), and one Si(1) atom. In the sixth O site, O(6) is bonded in a distorted T-shaped geometry to one Li(2), one Ga(2), and one Si(2) atom. In the seventh O site, O(7) is bonded in a distorted T-shaped geometry to one Li(1), one Ga(3), and one Si(3) atom. In the eighth O site, O(8) is bonded in a distorted T-shaped geometry to one Na(1), one Ga(3), and one Si(4) atom. In the ninth O site, O(9) is bonded in a 3-coordinate geometry to one Na(1), one Si(1), and one Si(4) atom. In the tenth O site, O(10) is bonded in a 3-coordinate geometry to one Li(1), one Si(2), and one Si(3) atom. In the eleventh O site, O(11) is bonded in a 2-coordinate geometry to one Li(2), one Si(1), and one Si(3) atom. In the twelfth O site, O(12) is bonded in a 3-coordinate geometry to one Li(2), one Si(2), and one Si(4) atom.