SiO2 crystallizes in the monoclinic C2 space group. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form corner-sharing SiO4 tetrahedra. There are four inequivalent O sites. In the first O site, O(1) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom. In the second O site, O(2) is bonded in a linear geometry to one Si(1) and one Si(2) atom. In the third O site, O(3) is bonded in a linear geometry to one Si(1) and one Si(2) atom. In the fourth O site, O(4) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom.
SiO2 crystallizes in the monoclinic C2 space group. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form corner-sharing SiO4 tetrahedra. The Si(1)-O(1) bond length is 1.63 Å. The Si(1)-O(2) bond length is 1.62 Å. The Si(1)-O(3) bond length is 1.60 Å. The Si(1)-O(4) bond length is 1.62 Å. In the second Si site, Si(2) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form corner-sharing SiO4 tetrahedra. The Si(2)-O(1) bond length is 1.62 Å. The Si(2)-O(2) bond length is 1.62 Å. The Si(2)-O(3) bond length is 1.60 Å. The Si(2)-O(4) bond length is 1.63 Å. There are four inequivalent O sites. In the first O site, O(1) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom. In the second O site, O(2) is bonded in a linear geometry to one Si(1) and one Si(2) atom. In the third O site, O(3) is bonded in a linear geometry to one Si(1) and one Si(2) atom. In the fourth O site, O(4) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom.