VGa2O5 crystallizes in the triclinic P1 space group. There are two inequivalent V sites. In the first V site, V(1) is bonded to one O(1), one O(10), one O(2), one O(4), one O(5), and one O(7) atom to form corner-sharing VO6 octahedra. The corner-sharing octahedral tilt angles range from 60-61°. In the second V site, V(2) is bonded to one O(1), one O(2), one O(3), one O(6), one O(8), and one O(9) atom to form corner-sharing VO6 octahedra. The corner-sharing octahedral tilt angles range from 60-61°. There are four inequivalent Ga sites. In the first Ga site, Ga(1) is bonded in a 6-coordinate geometry to one O(1), one O(3), one O(4), one O(5), one O(7), and one O(8) atom. In the second Ga site, Ga(2) is bonded in a 6-coordinate geometry to one O(10), one O(2), one O(3), one O(4), one O(6), and one O(9) atom. In the third Ga site, Ga(3) is bonded in a 6-coordinate geometry to one O(1), one O(3), one O(5), one O(6), one O(7), and one O(8) atom. In the fourth Ga site, Ga(4) is bonded in a 6-coordinate geometry to one O(10), one O(2), one O(4), one O(5), one O(6), and one O(9) atom. There are ten inequivalent O sites. In the first O site, O(1) is bonded to one V(1), one V(2), one Ga(1), and one Ga(3) atom to form distorted OV2Ga2 trigonal pyramids that share  a cornercorner with one O(3)VGa3 trigonal pyramid,  a cornercorner with one O(5)VGa3 trigonal pyramid, corners with two equivalent O(2)V2Ga2 trigonal pyramids,  an edgeedge with one O(3)VGa3 trigonal pyramid,  an edgeedge with one O(4)VGa3 trigonal pyramid,  an edgeedge with one O(5)VGa3 trigonal pyramid, and  an edgeedge with one O(6)VGa3 trigonal pyramid. In the second O site, O(2) is bonded to one V(1), one V(2), one Ga(2), and one Ga(4) atom to form distorted OV2Ga2 trigonal pyramids that share  a cornercorner with one O(4)VGa3 trigonal pyramid,  a cornercorner with one O(6)VGa3 trigonal pyramid, corners with two equivalent O(1)V2Ga2 trigonal pyramids,  an edgeedge with one O(3)VGa3 trigonal pyramid,  an edgeedge with one O(4)VGa3 trigonal pyramid,  an edgeedge with one O(5)VGa3 trigonal pyramid, and  an edgeedge with one O(6)VGa3 trigonal pyramid. In the third O site, O(3) is bonded to one V(2), one Ga(1), one Ga(2), and one Ga(3) atom to form distorted OVGa3 trigonal pyramids that share  a cornercorner with one O(1)V2Ga2 trigonal pyramid,  a cornercorner with one O(6)VGa3 trigonal pyramid, corners with two equivalent O(4)VGa3 trigonal pyramids,  an edgeedge with one O(1)V2Ga2 trigonal pyramid,  an edgeedge with one O(2)V2Ga2 trigonal pyramid,  an edgeedge with one O(5)VGa3 trigonal pyramid, and  an edgeedge with one O(6)VGa3 trigonal pyramid. In the fourth O site, O(4) is bonded to one V(1), one Ga(1), one Ga(2), and one Ga(4) atom to form distorted OVGa3 trigonal pyramids that share  a cornercorner with one O(2)V2Ga2 trigonal pyramid,  a cornercorner with one O(5)VGa3 trigonal pyramid, corners with two equivalent O(3)VGa3 trigonal pyramids,  an edgeedge with one O(1)V2Ga2 trigonal pyramid,  an edgeedge with one O(2)V2Ga2 trigonal pyramid,  an edgeedge with one O(5)VGa3 trigonal pyramid, and  an edgeedge with one O(6)VGa3 trigonal pyramid. In the fifth O site, O(5) is bonded to one V(1), one Ga(1), one Ga(3), and one Ga(4) atom to form distorted OVGa3 trigonal pyramids that share  a cornercorner with one O(1)V2Ga2 trigonal pyramid,  a cornercorner with one O(4)VGa3 trigonal pyramid, corners with two equivalent O(6)VGa3 trigonal pyramids,  an edgeedge with one O(1)V2Ga2 trigonal pyramid,  an edgeedge with one O(2)V2Ga2 trigonal pyramid,  an edgeedge with one O(3)VGa3 trigonal pyramid, and  an edgeedge with one O(4)VGa3 trigonal pyramid. In the sixth O site, O(6) is bonded to one V(2), one Ga(2), one Ga(3), and one Ga(4) atom to form distorted OVGa3 trigonal pyramids that share  a cornercorner with one O(2)V2Ga2 trigonal pyramid,  a cornercorner with one O(3)VGa3 trigonal pyramid, corners with two equivalent O(5)VGa3 trigonal pyramids,  an edgeedge with one O(1)V2Ga2 trigonal pyramid,  an edgeedge with one O(2)V2Ga2 trigonal pyramid,  an edgeedge with one O(3)VGa3 trigonal pyramid, and  an edgeedge with one O(4)VGa3 trigonal pyramid. In the seventh O site, O(7) is bonded in a trigonal planar geometry to one V(1), one Ga(1), and one Ga(3) atom. In the eighth O site, O(8) is bonded in a trigonal planar geometry to one V(2), one Ga(1), and one Ga(3) atom. In the ninth O site, O(9) is bonded in a trigonal planar geometry to one V(2), one Ga(2), and one Ga(4) atom. In the tenth O site, O(10) is bonded in a trigonal planar geometry to one V(1), one Ga(2), and one Ga(4) atom.
VGa2O5 crystallizes in the triclinic P1 space group. There are two inequivalent V sites. In the first V site, V(1) is bonded to one O(1), one O(10), one O(2), one O(4), one O(5), and one O(7) atom to form corner-sharing VO6 octahedra. The corner-sharing octahedral tilt angles range from 60-61°. The V(1)-O(1) bond length is 2.02 Å. The V(1)-O(10) bond length is 1.90 Å. The V(1)-O(2) bond length is 2.02 Å. The V(1)-O(4) bond length is 1.98 Å. The V(1)-O(5) bond length is 1.99 Å. The V(1)-O(7) bond length is 1.90 Å. In the second V site, V(2) is bonded to one O(1), one O(2), one O(3), one O(6), one O(8), and one O(9) atom to form corner-sharing VO6 octahedra. The corner-sharing octahedral tilt angles range from 60-61°. The V(2)-O(1) bond length is 2.02 Å. The V(2)-O(2) bond length is 2.02 Å. The V(2)-O(3) bond length is 1.98 Å. The V(2)-O(6) bond length is 1.99 Å. The V(2)-O(8) bond length is 1.90 Å. The V(2)-O(9) bond length is 1.90 Å. There are four inequivalent Ga sites. In the first Ga site, Ga(1) is bonded in a 6-coordinate geometry to one O(1), one O(3), one O(4), one O(5), one O(7), and one O(8) atom. The Ga(1)-O(1) bond length is 2.09 Å. The Ga(1)-O(3) bond length is 1.98 Å. The Ga(1)-O(4) bond length is 1.99 Å. The Ga(1)-O(5) bond length is 2.32 Å. The Ga(1)-O(7) bond length is 1.95 Å. The Ga(1)-O(8) bond length is 1.90 Å. In the second Ga site, Ga(2) is bonded in a 6-coordinate geometry to one O(10), one O(2), one O(3), one O(4), one O(6), and one O(9) atom. The Ga(2)-O(10) bond length is 1.90 Å. The Ga(2)-O(2) bond length is 2.08 Å. The Ga(2)-O(3) bond length is 2.00 Å. The Ga(2)-O(4) bond length is 1.99 Å. The Ga(2)-O(6) bond length is 2.31 Å. The Ga(2)-O(9) bond length is 1.95 Å. In the third Ga site, Ga(3) is bonded in a 6-coordinate geometry to one O(1), one O(3), one O(5), one O(6), one O(7), and one O(8) atom. The Ga(3)-O(1) bond length is 2.09 Å. The Ga(3)-O(3) bond length is 2.32 Å. The Ga(3)-O(5) bond length is 1.98 Å. The Ga(3)-O(6) bond length is 2.00 Å. The Ga(3)-O(7) bond length is 1.90 Å. The Ga(3)-O(8) bond length is 1.95 Å. In the fourth Ga site, Ga(4) is bonded in a 6-coordinate geometry to one O(10), one O(2), one O(4), one O(5), one O(6), and one O(9) atom. The Ga(4)-O(10) bond length is 1.95 Å. The Ga(4)-O(2) bond length is 2.09 Å. The Ga(4)-O(4) bond length is 2.33 Å. The Ga(4)-O(5) bond length is 1.99 Å. The Ga(4)-O(6) bond length is 1.98 Å. The Ga(4)-O(9) bond length is 1.90 Å. There are ten inequivalent O sites. In the first O site, O(1) is bonded to one V(1), one V(2), one Ga(1), and one Ga(3) atom to form distorted OV2Ga2 trigonal pyramids that share  a cornercorner with one O(3)VGa3 trigonal pyramid,  a cornercorner with one O(5)VGa3 trigonal pyramid, corners with two equivalent O(2)V2Ga2 trigonal pyramids,  an edgeedge with one O(3)VGa3 trigonal pyramid,  an edgeedge with one O(4)VGa3 trigonal pyramid,  an edgeedge with one O(5)VGa3 trigonal pyramid, and  an edgeedge with one O(6)VGa3 trigonal pyramid. In the second O site, O(2) is bonded to one V(1), one V(2), one Ga(2), and one Ga(4) atom to form distorted OV2Ga2 trigonal pyramids that share  a cornercorner with one O(4)VGa3 trigonal pyramid,  a cornercorner with one O(6)VGa3 trigonal pyramid, corners with two equivalent O(1)V2Ga2 trigonal pyramids,  an edgeedge with one O(3)VGa3 trigonal pyramid,  an edgeedge with one O(4)VGa3 trigonal pyramid,  an edgeedge with one O(5)VGa3 trigonal pyramid, and  an edgeedge with one O(6)VGa3 trigonal pyramid. In the third O site, O(3) is bonded to one V(2), one Ga(1), one Ga(2), and one Ga(3) atom to form distorted OVGa3 trigonal pyramids that share  a cornercorner with one O(1)V2Ga2 trigonal pyramid,  a cornercorner with one O(6)VGa3 trigonal pyramid, corners with two equivalent O(4)VGa3 trigonal pyramids,  an edgeedge with one O(1)V2Ga2 trigonal pyramid,  an edgeedge with one O(2)V2Ga2 trigonal pyramid,  an edgeedge with one O(5)VGa3 trigonal pyramid, and  an edgeedge with one O(6)VGa3 trigonal pyramid. In the fourth O site, O(4) is bonded to one V(1), one Ga(1), one Ga(2), and one Ga(4) atom to form distorted OVGa3 trigonal pyramids that share  a cornercorner with one O(2)V2Ga2 trigonal pyramid,  a cornercorner with one O(5)VGa3 trigonal pyramid, corners with two equivalent O(3)VGa3 trigonal pyramids,  an edgeedge with one O(1)V2Ga2 trigonal pyramid,  an edgeedge with one O(2)V2Ga2 trigonal pyramid,  an edgeedge with one O(5)VGa3 trigonal pyramid, and  an edgeedge with one O(6)VGa3 trigonal pyramid. In the fifth O site, O(5) is bonded to one V(1), one Ga(1), one Ga(3), and one Ga(4) atom to form distorted OVGa3 trigonal pyramids that share  a cornercorner with one O(1)V2Ga2 trigonal pyramid,  a cornercorner with one O(4)VGa3 trigonal pyramid, corners with two equivalent O(6)VGa3 trigonal pyramids,  an edgeedge with one O(1)V2Ga2 trigonal pyramid,  an edgeedge with one O(2)V2Ga2 trigonal pyramid,  an edgeedge with one O(3)VGa3 trigonal pyramid, and  an edgeedge with one O(4)VGa3 trigonal pyramid. In the sixth O site, O(6) is bonded to one V(2), one Ga(2), one Ga(3), and one Ga(4) atom to form distorted OVGa3 trigonal pyramids that share  a cornercorner with one O(2)V2Ga2 trigonal pyramid,  a cornercorner with one O(3)VGa3 trigonal pyramid, corners with two equivalent O(5)VGa3 trigonal pyramids,  an edgeedge with one O(1)V2Ga2 trigonal pyramid,  an edgeedge with one O(2)V2Ga2 trigonal pyramid,  an edgeedge with one O(3)VGa3 trigonal pyramid, and  an edgeedge with one O(4)VGa3 trigonal pyramid. In the seventh O site, O(7) is bonded in a trigonal planar geometry to one V(1), one Ga(1), and one Ga(3) atom. In the eighth O site, O(8) is bonded in a trigonal planar geometry to one V(2), one Ga(1), and one Ga(3) atom. In the ninth O site, O(9) is bonded in a trigonal planar geometry to one V(2), one Ga(2), and one Ga(4) atom. In the tenth O site, O(10) is bonded in a trigonal planar geometry to one V(1), one Ga(2), and one Ga(4) atom.