InGaAlSb3 is Stannite-like structured and crystallizes in the orthorhombic Imm2 space group. In(1) is bonded to two equivalent Sb(1) and two equivalent Sb(2) atoms to form InSb4 tetrahedra that share corners with four equivalent In(1)Sb4 tetrahedra, corners with four equivalent Ga(1)Sb4 tetrahedra, and corners with four equivalent Al(1)Sb4 tetrahedra. Ga(1) is bonded to two equivalent Sb(2) and two equivalent Sb(3) atoms to form GaSb4 tetrahedra that share corners with four equivalent In(1)Sb4 tetrahedra, corners with four equivalent Ga(1)Sb4 tetrahedra, and corners with four equivalent Al(1)Sb4 tetrahedra. Al(1) is bonded to two equivalent Sb(1) and two equivalent Sb(3) atoms to form AlSb4 tetrahedra that share corners with four equivalent In(1)Sb4 tetrahedra, corners with four equivalent Ga(1)Sb4 tetrahedra, and corners with four equivalent Al(1)Sb4 tetrahedra. There are three inequivalent Sb sites. In the first Sb site, Sb(1) is bonded to two equivalent In(1) and two equivalent Al(1) atoms to form SbAl2In2 tetrahedra that share corners with four equivalent Sb(3)Al2Ga2 tetrahedra, corners with four equivalent Sb(1)Al2In2 tetrahedra, and corners with four equivalent Sb(2)In2Ga2 tetrahedra. In the second Sb site, Sb(2) is bonded to two equivalent In(1) and two equivalent Ga(1) atoms to form SbIn2Ga2 tetrahedra that share corners with four equivalent Sb(3)Al2Ga2 tetrahedra, corners with four equivalent Sb(1)Al2In2 tetrahedra, and corners with four equivalent Sb(2)In2Ga2 tetrahedra. In the third Sb site, Sb(3) is bonded to two equivalent Ga(1) and two equivalent Al(1) atoms to form SbAl2Ga2 tetrahedra that share corners with four equivalent Sb(3)Al2Ga2 tetrahedra, corners with four equivalent Sb(1)Al2In2 tetrahedra, and corners with four equivalent Sb(2)In2Ga2 tetrahedra.
InGaAlSb3 is Stannite-like structured and crystallizes in the orthorhombic Imm2 space group. In(1) is bonded to two equivalent Sb(1) and two equivalent Sb(2) atoms to form InSb4 tetrahedra that share corners with four equivalent In(1)Sb4 tetrahedra, corners with four equivalent Ga(1)Sb4 tetrahedra, and corners with four equivalent Al(1)Sb4 tetrahedra. Both In(1)-Sb(1) bond lengths are 2.83 Å. Both In(1)-Sb(2) bond lengths are 2.84 Å. Ga(1) is bonded to two equivalent Sb(2) and two equivalent Sb(3) atoms to form GaSb4 tetrahedra that share corners with four equivalent In(1)Sb4 tetrahedra, corners with four equivalent Ga(1)Sb4 tetrahedra, and corners with four equivalent Al(1)Sb4 tetrahedra. Both Ga(1)-Sb(2) bond lengths are 2.71 Å. Both Ga(1)-Sb(3) bond lengths are 2.73 Å. Al(1) is bonded to two equivalent Sb(1) and two equivalent Sb(3) atoms to form AlSb4 tetrahedra that share corners with four equivalent In(1)Sb4 tetrahedra, corners with four equivalent Ga(1)Sb4 tetrahedra, and corners with four equivalent Al(1)Sb4 tetrahedra. Both Al(1)-Sb(1) bond lengths are 2.71 Å. Both Al(1)-Sb(3) bond lengths are 2.72 Å. There are three inequivalent Sb sites. In the first Sb site, Sb(1) is bonded to two equivalent In(1) and two equivalent Al(1) atoms to form SbAl2In2 tetrahedra that share corners with four equivalent Sb(3)Al2Ga2 tetrahedra, corners with four equivalent Sb(1)Al2In2 tetrahedra, and corners with four equivalent Sb(2)In2Ga2 tetrahedra. In the second Sb site, Sb(2) is bonded to two equivalent In(1) and two equivalent Ga(1) atoms to form SbIn2Ga2 tetrahedra that share corners with four equivalent Sb(3)Al2Ga2 tetrahedra, corners with four equivalent Sb(1)Al2In2 tetrahedra, and corners with four equivalent Sb(2)In2Ga2 tetrahedra. In the third Sb site, Sb(3) is bonded to two equivalent Ga(1) and two equivalent Al(1) atoms to form SbAl2Ga2 tetrahedra that share corners with four equivalent Sb(3)Al2Ga2 tetrahedra, corners with four equivalent Sb(1)Al2In2 tetrahedra, and corners with four equivalent Sb(2)In2Ga2 tetrahedra.