Rb6Si10O23 crystallizes in the orthorhombic Amm2 space group. There are four inequivalent Rb sites. In the first Rb site, Rb(1) is bonded in a 7-coordinate geometry to one O(7), two equivalent O(2), two equivalent O(3), and two equivalent O(8) atoms. In the second Rb site, Rb(2) is bonded in a 7-coordinate geometry to one O(6), two equivalent O(1), two equivalent O(3), and two equivalent O(8) atoms. In the third Rb site, Rb(3) is bonded in a 8-coordinate geometry to four equivalent O(3) and four equivalent O(4) atoms. In the fourth Rb site, Rb(4) is bonded in a 7-coordinate geometry to one O(5), two equivalent O(6), and four equivalent O(3) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(4), and one O(7) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(1), one O(2), one O(3), and one O(6) atom to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(5), one O(8), and two equivalent O(4) atoms to form corner-sharing SiO4 tetrahedra. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a distorted bent 120 degrees geometry to one Rb(2), one Si(1), and one Si(2) atom. In the second O site, O(2) is bonded in a distorted bent 120 degrees geometry to one Rb(1), one Si(1), and one Si(2) atom. In the third O site, O(3) is bonded in a distorted single-bond geometry to one Rb(1), one Rb(2), one Rb(3), one Rb(4), and one Si(2) atom. In the fourth O site, O(4) is bonded in a distorted bent 150 degrees geometry to one Rb(3), one Si(1), and one Si(3) atom. In the fifth O site, O(5) is bonded in a distorted bent 150 degrees geometry to one Rb(4) and two equivalent Si(3) atoms. In the sixth O site, O(6) is bonded in a distorted bent 150 degrees geometry to one Rb(2), one Rb(4), and two equivalent Si(2) atoms. In the seventh O site, O(7) is bonded in a distorted bent 150 degrees geometry to one Rb(1) and two equivalent Si(1) atoms. In the eighth O site, O(8) is bonded in a distorted single-bond geometry to two equivalent Rb(1), two equivalent Rb(2), and one Si(3) atom.
Rb6Si10O23 crystallizes in the orthorhombic Amm2 space group. There are four inequivalent Rb sites. In the first Rb site, Rb(1) is bonded in a 7-coordinate geometry to one O(7), two equivalent O(2), two equivalent O(3), and two equivalent O(8) atoms. The Rb(1)-O(7) bond length is 3.13 Å. Both Rb(1)-O(2) bond lengths are 3.16 Å. Both Rb(1)-O(3) bond lengths are 2.95 Å. Both Rb(1)-O(8) bond lengths are 3.04 Å. In the second Rb site, Rb(2) is bonded in a 7-coordinate geometry to one O(6), two equivalent O(1), two equivalent O(3), and two equivalent O(8) atoms. The Rb(2)-O(6) bond length is 3.27 Å. Both Rb(2)-O(1) bond lengths are 3.15 Å. Both Rb(2)-O(3) bond lengths are 3.04 Å. Both Rb(2)-O(8) bond lengths are 3.02 Å. In the third Rb site, Rb(3) is bonded in a 8-coordinate geometry to four equivalent O(3) and four equivalent O(4) atoms. All Rb(3)-O(3) bond lengths are 3.05 Å. All Rb(3)-O(4) bond lengths are 3.25 Å. In the fourth Rb site, Rb(4) is bonded in a 7-coordinate geometry to one O(5), two equivalent O(6), and four equivalent O(3) atoms. The Rb(4)-O(5) bond length is 3.06 Å. Both Rb(4)-O(6) bond lengths are 3.06 Å. All Rb(4)-O(3) bond lengths are 3.03 Å. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(4), and one O(7) atom to form corner-sharing SiO4 tetrahedra. The Si(1)-O(1) bond length is 1.61 Å. The Si(1)-O(2) bond length is 1.61 Å. The Si(1)-O(4) bond length is 1.61 Å. The Si(1)-O(7) bond length is 1.63 Å. In the second Si site, Si(2) is bonded to one O(1), one O(2), one O(3), and one O(6) atom to form corner-sharing SiO4 tetrahedra. The Si(2)-O(1) bond length is 1.65 Å. The Si(2)-O(2) bond length is 1.65 Å. The Si(2)-O(3) bond length is 1.57 Å. The Si(2)-O(6) bond length is 1.64 Å. In the third Si site, Si(3) is bonded to one O(5), one O(8), and two equivalent O(4) atoms to form corner-sharing SiO4 tetrahedra. The Si(3)-O(5) bond length is 1.63 Å. The Si(3)-O(8) bond length is 1.57 Å. Both Si(3)-O(4) bond lengths are 1.65 Å. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a distorted bent 120 degrees geometry to one Rb(2), one Si(1), and one Si(2) atom. In the second O site, O(2) is bonded in a distorted bent 120 degrees geometry to one Rb(1), one Si(1), and one Si(2) atom. In the third O site, O(3) is bonded in a distorted single-bond geometry to one Rb(1), one Rb(2), one Rb(3), one Rb(4), and one Si(2) atom. In the fourth O site, O(4) is bonded in a distorted bent 150 degrees geometry to one Rb(3), one Si(1), and one Si(3) atom. In the fifth O site, O(5) is bonded in a distorted bent 150 degrees geometry to one Rb(4) and two equivalent Si(3) atoms. In the sixth O site, O(6) is bonded in a distorted bent 150 degrees geometry to one Rb(2), one Rb(4), and two equivalent Si(2) atoms. In the seventh O site, O(7) is bonded in a distorted bent 150 degrees geometry to one Rb(1) and two equivalent Si(1) atoms. In the eighth O site, O(8) is bonded in a distorted single-bond geometry to two equivalent Rb(1), two equivalent Rb(2), and one Si(3) atom.