CuSiO3 crystallizes in the triclinic P-1 space group. There are three inequivalent Cu sites. In the first Cu site, Cu(1) is bonded in a rectangular see-saw-like geometry to one O(2), one O(6), and two equivalent O(1) atoms. In the second Cu site, Cu(2) is bonded in a rectangular see-saw-like geometry to one O(4), one O(6), and two equivalent O(7) atoms. In the third Cu site, Cu(3) is bonded in a rectangular see-saw-like geometry to one O(2), one O(4), and two equivalent O(8) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(3), one O(5), one O(6), and one O(8) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(1), one O(3), one O(4), and one O(9) atom to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(2), one O(5), one O(7), and one O(9) atom to form corner-sharing SiO4 tetrahedra. There are nine inequivalent O sites. In the first O site, O(1) is bonded in a distorted trigonal planar geometry to two equivalent Cu(1) and one Si(2) atom. In the second O site, O(2) is bonded in a trigonal planar geometry to one Cu(1), one Cu(3), and one Si(3) atom. In the third O site, O(3) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom. In the fourth O site, O(4) is bonded in a trigonal planar geometry to one Cu(2), one Cu(3), and one Si(2) atom. In the fifth O site, O(5) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(3) atom. In the sixth O site, O(6) is bonded in a trigonal planar geometry to one Cu(1), one Cu(2), and one Si(1) atom. In the seventh O site, O(7) is bonded in a distorted trigonal planar geometry to two equivalent Cu(2) and one Si(3) atom. In the eighth O site, O(8) is bonded in a distorted trigonal planar geometry to two equivalent Cu(3) and one Si(1) atom. In the ninth O site, O(9) is bonded in a bent 120 degrees geometry to one Si(2) and one Si(3) atom.
CuSiO3 crystallizes in the triclinic P-1 space group. There are three inequivalent Cu sites. In the first Cu site, Cu(1) is bonded in a rectangular see-saw-like geometry to one O(2), one O(6), and two equivalent O(1) atoms. The Cu(1)-O(2) bond length is 1.94 Å. The Cu(1)-O(6) bond length is 1.93 Å. There is one shorter (1.95 Å) and one longer (1.96 Å) Cu(1)-O(1) bond length. In the second Cu site, Cu(2) is bonded in a rectangular see-saw-like geometry to one O(4), one O(6), and two equivalent O(7) atoms. The Cu(2)-O(4) bond length is 1.92 Å. The Cu(2)-O(6) bond length is 1.94 Å. There is one shorter (1.95 Å) and one longer (1.96 Å) Cu(2)-O(7) bond length. In the third Cu site, Cu(3) is bonded in a rectangular see-saw-like geometry to one O(2), one O(4), and two equivalent O(8) atoms. The Cu(3)-O(2) bond length is 1.93 Å. The Cu(3)-O(4) bond length is 1.94 Å. There is one shorter (1.95 Å) and one longer (1.96 Å) Cu(3)-O(8) bond length. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(3), one O(5), one O(6), and one O(8) atom to form corner-sharing SiO4 tetrahedra. The Si(1)-O(3) bond length is 1.64 Å. The Si(1)-O(5) bond length is 1.64 Å. The Si(1)-O(6) bond length is 1.65 Å. The Si(1)-O(8) bond length is 1.64 Å. In the second Si site, Si(2) is bonded to one O(1), one O(3), one O(4), and one O(9) atom to form corner-sharing SiO4 tetrahedra. The Si(2)-O(1) bond length is 1.64 Å. The Si(2)-O(3) bond length is 1.64 Å. The Si(2)-O(4) bond length is 1.65 Å. The Si(2)-O(9) bond length is 1.64 Å. In the third Si site, Si(3) is bonded to one O(2), one O(5), one O(7), and one O(9) atom to form corner-sharing SiO4 tetrahedra. The Si(3)-O(2) bond length is 1.65 Å. The Si(3)-O(5) bond length is 1.64 Å. The Si(3)-O(7) bond length is 1.64 Å. The Si(3)-O(9) bond length is 1.64 Å. There are nine inequivalent O sites. In the first O site, O(1) is bonded in a distorted trigonal planar geometry to two equivalent Cu(1) and one Si(2) atom. In the second O site, O(2) is bonded in a trigonal planar geometry to one Cu(1), one Cu(3), and one Si(3) atom. In the third O site, O(3) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom. In the fourth O site, O(4) is bonded in a trigonal planar geometry to one Cu(2), one Cu(3), and one Si(2) atom. In the fifth O site, O(5) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(3) atom. In the sixth O site, O(6) is bonded in a trigonal planar geometry to one Cu(1), one Cu(2), and one Si(1) atom. In the seventh O site, O(7) is bonded in a distorted trigonal planar geometry to two equivalent Cu(2) and one Si(3) atom. In the eighth O site, O(8) is bonded in a distorted trigonal planar geometry to two equivalent Cu(3) and one Si(1) atom. In the ninth O site, O(9) is bonded in a bent 120 degrees geometry to one Si(2) and one Si(3) atom.