Si2H6O is High Pressure (4-7GPa) Tellurium structured and crystallizes in the orthorhombic P2_12_12_1 space group. The structure is zero-dimensional and consists of four disiloxane molecules. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one H(1), one H(2), one H(3), and one O(1) atom to form corner-sharing SiH3O tetrahedra. In the second Si site, Si(2) is bonded to one H(4), one H(5), one H(6), and one O(1) atom to form corner-sharing SiH3O tetrahedra. There are six inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one Si(1) atom. In the second H site, H(2) is bonded in a single-bond geometry to one Si(1) atom. In the third H site, H(3) is bonded in a single-bond geometry to one Si(1) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one Si(2) atom. In the fifth H site, H(5) is bonded in a single-bond geometry to one Si(2) atom. In the sixth H site, H(6) is bonded in a single-bond geometry to one Si(2) atom. O(1) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom.
Si2H6O is High Pressure (4-7GPa) Tellurium structured and crystallizes in the orthorhombic P2_12_12_1 space group. The structure is zero-dimensional and consists of four disiloxane molecules. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one H(1), one H(2), one H(3), and one O(1) atom to form corner-sharing SiH3O tetrahedra. The Si(1)-H(1) bond length is 1.50 Å. The Si(1)-H(2) bond length is 1.49 Å. The Si(1)-H(3) bond length is 1.49 Å. The Si(1)-O(1) bond length is 1.65 Å. In the second Si site, Si(2) is bonded to one H(4), one H(5), one H(6), and one O(1) atom to form corner-sharing SiH3O tetrahedra. The Si(2)-H(4) bond length is 1.49 Å. The Si(2)-H(5) bond length is 1.49 Å. The Si(2)-H(6) bond length is 1.49 Å. The Si(2)-O(1) bond length is 1.66 Å. There are six inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one Si(1) atom. In the second H site, H(2) is bonded in a single-bond geometry to one Si(1) atom. In the third H site, H(3) is bonded in a single-bond geometry to one Si(1) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one Si(2) atom. In the fifth H site, H(5) is bonded in a single-bond geometry to one Si(2) atom. In the sixth H site, H(6) is bonded in a single-bond geometry to one Si(2) atom. O(1) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom.