Si6O7Cl10 is Indium-like structured and crystallizes in the monoclinic P2_1/m space group. The structure is zero-dimensional and consists of two decachloroheptaoxahexasiloxane molecules. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), two equivalent O(2), and one Cl(1) atom to form SiClO3 tetrahedra that share  a cornercorner with one Si(4)ClO3 tetrahedra and corners with two equivalent Si(2)Cl2O2 tetrahedra. In the second Si site, Si(2) is bonded to one O(2), one O(3), one Cl(2), and one Cl(3) atom to form SiCl2O2 tetrahedra that share  a cornercorner with one Si(3)Cl2O2 tetrahedra and  a cornercorner with one Si(1)ClO3 tetrahedra. In the third Si site, Si(3) is bonded to one O(3), one O(4), one Cl(4), and one Cl(5) atom to form SiCl2O2 tetrahedra that share  a cornercorner with one Si(2)Cl2O2 tetrahedra and  a cornercorner with one Si(4)ClO3 tetrahedra. In the fourth Si site, Si(4) is bonded to one O(1), two equivalent O(4), and one Cl(6) atom to form SiClO3 tetrahedra that share  a cornercorner with one Si(1)ClO3 tetrahedra and corners with two equivalent Si(3)Cl2O2 tetrahedra. There are four inequivalent O sites. In the first O site, O(1) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(4) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the third O site, O(3) is bonded in a linear geometry to one Si(2) and one Si(3) atom. In the fourth O site, O(4) is bonded in a bent 150 degrees geometry to one Si(3) and one Si(4) atom. There are six inequivalent Cl sites. In the first Cl site, Cl(1) is bonded in a single-bond geometry to one Si(1) atom. In the second Cl site, Cl(2) is bonded in a single-bond geometry to one Si(2) atom. In the third Cl site, Cl(3) is bonded in a single-bond geometry to one Si(2) atom. In the fourth Cl site, Cl(4) is bonded in a single-bond geometry to one Si(3) atom. In the fifth Cl site, Cl(5) is bonded in a single-bond geometry to one Si(3) atom. In the sixth Cl site, Cl(6) is bonded in a single-bond geometry to one Si(4) atom.
Si6O7Cl10 is Indium-like structured and crystallizes in the monoclinic P2_1/m space group. The structure is zero-dimensional and consists of two decachloroheptaoxahexasiloxane molecules. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), two equivalent O(2), and one Cl(1) atom to form SiClO3 tetrahedra that share  a cornercorner with one Si(4)ClO3 tetrahedra and corners with two equivalent Si(2)Cl2O2 tetrahedra. The Si(1)-O(1) bond length is 1.63 Å. Both Si(1)-O(2) bond lengths are 1.63 Å. The Si(1)-Cl(1) bond length is 2.03 Å. In the second Si site, Si(2) is bonded to one O(2), one O(3), one Cl(2), and one Cl(3) atom to form SiCl2O2 tetrahedra that share  a cornercorner with one Si(3)Cl2O2 tetrahedra and  a cornercorner with one Si(1)ClO3 tetrahedra. The Si(2)-O(2) bond length is 1.63 Å. The Si(2)-O(3) bond length is 1.62 Å. The Si(2)-Cl(2) bond length is 2.03 Å. The Si(2)-Cl(3) bond length is 2.03 Å. In the third Si site, Si(3) is bonded to one O(3), one O(4), one Cl(4), and one Cl(5) atom to form SiCl2O2 tetrahedra that share  a cornercorner with one Si(2)Cl2O2 tetrahedra and  a cornercorner with one Si(4)ClO3 tetrahedra. The Si(3)-O(3) bond length is 1.62 Å. The Si(3)-O(4) bond length is 1.63 Å. The Si(3)-Cl(4) bond length is 2.03 Å. The Si(3)-Cl(5) bond length is 2.03 Å. In the fourth Si site, Si(4) is bonded to one O(1), two equivalent O(4), and one Cl(6) atom to form SiClO3 tetrahedra that share  a cornercorner with one Si(1)ClO3 tetrahedra and corners with two equivalent Si(3)Cl2O2 tetrahedra. The Si(4)-O(1) bond length is 1.62 Å. Both Si(4)-O(4) bond lengths are 1.62 Å. The Si(4)-Cl(6) bond length is 2.03 Å. There are four inequivalent O sites. In the first O site, O(1) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(4) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the third O site, O(3) is bonded in a linear geometry to one Si(2) and one Si(3) atom. In the fourth O site, O(4) is bonded in a bent 150 degrees geometry to one Si(3) and one Si(4) atom. There are six inequivalent Cl sites. In the first Cl site, Cl(1) is bonded in a single-bond geometry to one Si(1) atom. In the second Cl site, Cl(2) is bonded in a single-bond geometry to one Si(2) atom. In the third Cl site, Cl(3) is bonded in a single-bond geometry to one Si(2) atom. In the fourth Cl site, Cl(4) is bonded in a single-bond geometry to one Si(3) atom. In the fifth Cl site, Cl(5) is bonded in a single-bond geometry to one Si(3) atom. In the sixth Cl site, Cl(6) is bonded in a single-bond geometry to one Si(4) atom.