SiC is Moissanite-6H-like structured and crystallizes in the trigonal P3m1 space group. There are five inequivalent Si sites. In the first Si site, Si(1) is bonded to one C(4) and three equivalent C(2) atoms to form corner-sharing SiC4 tetrahedra. In the second Si site, Si(2) is bonded to one C(1) and three equivalent C(5) atoms to form corner-sharing SiC4 tetrahedra. In the third Si site, Si(3) is bonded to one C(3) and three equivalent C(1) atoms to form corner-sharing SiC4 tetrahedra. In the fourth Si site, Si(4) is bonded to one C(2) and three equivalent C(3) atoms to form corner-sharing SiC4 tetrahedra. In the fifth Si site, Si(5) is bonded to one C(5) and three equivalent C(4) atoms to form corner-sharing SiC4 tetrahedra. There are five inequivalent C sites. In the first C site, C(1) is bonded to one Si(2) and three equivalent Si(3) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(2) is bonded to one Si(4) and three equivalent Si(1) atoms to form corner-sharing CSi4 tetrahedra. In the third C site, C(3) is bonded to one Si(3) and three equivalent Si(4) atoms to form corner-sharing CSi4 tetrahedra. In the fourth C site, C(4) is bonded to one Si(1) and three equivalent Si(5) atoms to form corner-sharing CSi4 tetrahedra. In the fifth C site, C(5) is bonded to one Si(5) and three equivalent Si(2) atoms to form corner-sharing CSi4 tetrahedra.
SiC is Moissanite-6H-like structured and crystallizes in the trigonal P3m1 space group. There are five inequivalent Si sites. In the first Si site, Si(1) is bonded to one C(4) and three equivalent C(2) atoms to form corner-sharing SiC4 tetrahedra. The Si(1)-C(4) bond length is 1.89 Å. All Si(1)-C(2) bond lengths are 1.88 Å. In the second Si site, Si(2) is bonded to one C(1) and three equivalent C(5) atoms to form corner-sharing SiC4 tetrahedra. The Si(2)-C(1) bond length is 1.89 Å. All Si(2)-C(5) bond lengths are 1.88 Å. In the third Si site, Si(3) is bonded to one C(3) and three equivalent C(1) atoms to form corner-sharing SiC4 tetrahedra. The Si(3)-C(3) bond length is 1.89 Å. All Si(3)-C(1) bond lengths are 1.88 Å. In the fourth Si site, Si(4) is bonded to one C(2) and three equivalent C(3) atoms to form corner-sharing SiC4 tetrahedra. The Si(4)-C(2) bond length is 1.89 Å. All Si(4)-C(3) bond lengths are 1.88 Å. In the fifth Si site, Si(5) is bonded to one C(5) and three equivalent C(4) atoms to form corner-sharing SiC4 tetrahedra. The Si(5)-C(5) bond length is 1.89 Å. All Si(5)-C(4) bond lengths are 1.88 Å. There are five inequivalent C sites. In the first C site, C(1) is bonded to one Si(2) and three equivalent Si(3) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(2) is bonded to one Si(4) and three equivalent Si(1) atoms to form corner-sharing CSi4 tetrahedra. In the third C site, C(3) is bonded to one Si(3) and three equivalent Si(4) atoms to form corner-sharing CSi4 tetrahedra. In the fourth C site, C(4) is bonded to one Si(1) and three equivalent Si(5) atoms to form corner-sharing CSi4 tetrahedra. In the fifth C site, C(5) is bonded to one Si(5) and three equivalent Si(2) atoms to form corner-sharing CSi4 tetrahedra.