SiC is Moissanite-4H structured and crystallizes in the hexagonal P6_3mc space group. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one C(1) and three equivalent C(2) atoms to form corner-sharing SiC4 tetrahedra. In the second Si site, Si(2) is bonded to one C(2) and three equivalent C(1) atoms to form corner-sharing SiC4 tetrahedra. There are two inequivalent C sites. In the first C site, C(1) is bonded to one Si(1) and three equivalent Si(2) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(2) is bonded to one Si(2) and three equivalent Si(1) atoms to form corner-sharing CSi4 tetrahedra.
SiC is Moissanite-4H structured and crystallizes in the hexagonal P6_3mc space group. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one C(1) and three equivalent C(2) atoms to form corner-sharing SiC4 tetrahedra. The Si(1)-C(1) bond length is 1.89 Å. All Si(1)-C(2) bond lengths are 1.88 Å. In the second Si site, Si(2) is bonded to one C(2) and three equivalent C(1) atoms to form corner-sharing SiC4 tetrahedra. The Si(2)-C(2) bond length is 1.89 Å. All Si(2)-C(1) bond lengths are 1.88 Å. There are two inequivalent C sites. In the first C site, C(1) is bonded to one Si(1) and three equivalent Si(2) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(2) is bonded to one Si(2) and three equivalent Si(1) atoms to form corner-sharing CSi4 tetrahedra.