SiO2 is Low Tridymite-like structured and crystallizes in the monoclinic C2/m space group. There are five inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(10), one O(4), one O(6), and one O(9) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(5), one O(6), one O(7), and one O(8) atom to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(2), one O(5), one O(7), and one O(9) atom to form corner-sharing SiO4 tetrahedra. In the fourth Si site, Si(4) is bonded to one O(1), one O(3), and two equivalent O(2) atoms to form corner-sharing SiO4 tetrahedra. In the fifth Si site, Si(5) is bonded to one O(1), one O(3), and two equivalent O(4) atoms to form corner-sharing SiO4 tetrahedra. There are ten inequivalent O sites. In the first O site, O(1) is bonded in a bent 150 degrees geometry to one Si(4) and one Si(5) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Si(3) and one Si(4) atom. In the third O site, O(3) is bonded in a linear geometry to one Si(4) and one Si(5) atom. In the fourth O site, O(4) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(5) atom. In the fifth O site, O(5) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(3) atom. In the sixth O site, O(6) is bonded in a linear geometry to one Si(1) and one Si(2) atom. In the seventh O site, O(7) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(3) atom. In the eighth O site, O(8) is bonded in a bent 150 degrees geometry to two equivalent Si(2) atoms. In the ninth O site, O(9) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(3) atom. In the tenth O site, O(10) is bonded in a bent 150 degrees geometry to two equivalent Si(1) atoms.
SiO2 is Low Tridymite-like structured and crystallizes in the monoclinic C2/m space group. There are five inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(10), one O(4), one O(6), and one O(9) atom to form corner-sharing SiO4 tetrahedra. The Si(1)-O(10) bond length is 1.63 Å. The Si(1)-O(4) bond length is 1.63 Å. The Si(1)-O(6) bond length is 1.62 Å. The Si(1)-O(9) bond length is 1.63 Å. In the second Si site, Si(2) is bonded to one O(5), one O(6), one O(7), and one O(8) atom to form corner-sharing SiO4 tetrahedra. The Si(2)-O(5) bond length is 1.63 Å. The Si(2)-O(6) bond length is 1.62 Å. The Si(2)-O(7) bond length is 1.62 Å. The Si(2)-O(8) bond length is 1.62 Å. In the third Si site, Si(3) is bonded to one O(2), one O(5), one O(7), and one O(9) atom to form corner-sharing SiO4 tetrahedra. The Si(3)-O(2) bond length is 1.62 Å. The Si(3)-O(5) bond length is 1.62 Å. The Si(3)-O(7) bond length is 1.62 Å. The Si(3)-O(9) bond length is 1.63 Å. In the fourth Si site, Si(4) is bonded to one O(1), one O(3), and two equivalent O(2) atoms to form corner-sharing SiO4 tetrahedra. The Si(4)-O(1) bond length is 1.62 Å. The Si(4)-O(3) bond length is 1.63 Å. Both Si(4)-O(2) bond lengths are 1.62 Å. In the fifth Si site, Si(5) is bonded to one O(1), one O(3), and two equivalent O(4) atoms to form corner-sharing SiO4 tetrahedra. The Si(5)-O(1) bond length is 1.63 Å. The Si(5)-O(3) bond length is 1.63 Å. Both Si(5)-O(4) bond lengths are 1.62 Å. There are ten inequivalent O sites. In the first O site, O(1) is bonded in a bent 150 degrees geometry to one Si(4) and one Si(5) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Si(3) and one Si(4) atom. In the third O site, O(3) is bonded in a linear geometry to one Si(4) and one Si(5) atom. In the fourth O site, O(4) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(5) atom. In the fifth O site, O(5) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(3) atom. In the sixth O site, O(6) is bonded in a linear geometry to one Si(1) and one Si(2) atom. In the seventh O site, O(7) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(3) atom. In the eighth O site, O(8) is bonded in a bent 150 degrees geometry to two equivalent Si(2) atoms. In the ninth O site, O(9) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(3) atom. In the tenth O site, O(10) is bonded in a bent 150 degrees geometry to two equivalent Si(1) atoms.