Na4Ga3Si3O12I crystallizes in the cubic P-43n space group. Na(1) is bonded to three equivalent O(1) and one I(1) atom to form distorted NaIO3 tetrahedra that share corners with three equivalent Na(1)IO3 tetrahedra, corners with three equivalent Ga(1)O4 tetrahedra, and corners with three equivalent Si(1)O4 tetrahedra. Ga(1) is bonded to four equivalent O(1) atoms to form GaO4 tetrahedra that share corners with four equivalent Na(1)IO3 tetrahedra and corners with four equivalent Si(1)O4 tetrahedra. Si(1) is bonded to four equivalent O(1) atoms to form SiO4 tetrahedra that share corners with four equivalent Na(1)IO3 tetrahedra and corners with four equivalent Ga(1)O4 tetrahedra. O(1) is bonded in a distorted trigonal planar geometry to one Na(1), one Ga(1), and one Si(1) atom. I(1) is bonded in a tetrahedral geometry to four equivalent Na(1) atoms.
Na4Ga3Si3O12I crystallizes in the cubic P-43n space group. Na(1) is bonded to three equivalent O(1) and one I(1) atom to form distorted NaIO3 tetrahedra that share corners with three equivalent Na(1)IO3 tetrahedra, corners with three equivalent Ga(1)O4 tetrahedra, and corners with three equivalent Si(1)O4 tetrahedra. All Na(1)-O(1) bond lengths are 2.33 Å. The Na(1)-I(1) bond length is 3.08 Å. Ga(1) is bonded to four equivalent O(1) atoms to form GaO4 tetrahedra that share corners with four equivalent Na(1)IO3 tetrahedra and corners with four equivalent Si(1)O4 tetrahedra. All Ga(1)-O(1) bond lengths are 1.84 Å. Si(1) is bonded to four equivalent O(1) atoms to form SiO4 tetrahedra that share corners with four equivalent Na(1)IO3 tetrahedra and corners with four equivalent Ga(1)O4 tetrahedra. All Si(1)-O(1) bond lengths are 1.64 Å. O(1) is bonded in a distorted trigonal planar geometry to one Na(1), one Ga(1), and one Si(1) atom. I(1) is bonded in a tetrahedral geometry to four equivalent Na(1) atoms.