BaGa4S7 crystallizes in the orthorhombic Pmn2_1 space group. Ba(1) is bonded to two equivalent S(1), two equivalent S(4), four equivalent S(2), and four equivalent S(3) atoms to form BaS12 cuboctahedra that share corners with four equivalent Ga(2)S4 tetrahedra, corners with six equivalent Ga(1)S4 tetrahedra, edges with two equivalent Ba(1)S12 cuboctahedra, edges with four equivalent Ga(1)S4 tetrahedra, edges with four equivalent Ga(2)S4 tetrahedra, and faces with two equivalent Ba(1)S12 cuboctahedra. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one S(1), one S(2), one S(3), and one S(4) atom to form GaS4 tetrahedra that share corners with three equivalent Ba(1)S12 cuboctahedra,  a cornercorner with one Ga(1)S4 tetrahedra, corners with four equivalent Ga(2)S4 tetrahedra, and edges with two equivalent Ba(1)S12 cuboctahedra. In the second Ga site, Ga(2) is bonded to one S(2), one S(3), and two equivalent S(1) atoms to form GaS4 tetrahedra that share corners with two equivalent Ba(1)S12 cuboctahedra, corners with two equivalent Ga(2)S4 tetrahedra, corners with four equivalent Ga(1)S4 tetrahedra, and edges with two equivalent Ba(1)S12 cuboctahedra. There are four inequivalent S sites. In the first S site, S(1) is bonded in a distorted trigonal non-coplanar geometry to one Ba(1), one Ga(1), and two equivalent Ga(2) atoms. In the second S site, S(2) is bonded in a distorted water-like geometry to two equivalent Ba(1), one Ga(1), and one Ga(2) atom. In the third S site, S(3) is bonded in a distorted water-like geometry to two equivalent Ba(1), one Ga(1), and one Ga(2) atom. In the fourth S site, S(4) is bonded in a distorted water-like geometry to two equivalent Ba(1) and two equivalent Ga(1) atoms.
BaGa4S7 crystallizes in the orthorhombic Pmn2_1 space group. Ba(1) is bonded to two equivalent S(1), two equivalent S(4), four equivalent S(2), and four equivalent S(3) atoms to form BaS12 cuboctahedra that share corners with four equivalent Ga(2)S4 tetrahedra, corners with six equivalent Ga(1)S4 tetrahedra, edges with two equivalent Ba(1)S12 cuboctahedra, edges with four equivalent Ga(1)S4 tetrahedra, edges with four equivalent Ga(2)S4 tetrahedra, and faces with two equivalent Ba(1)S12 cuboctahedra. Both Ba(1)-S(1) bond lengths are 3.68 Å. There is one shorter (3.51 Å) and one longer (3.54 Å) Ba(1)-S(4) bond length. There are two shorter (3.40 Å) and two longer (3.77 Å) Ba(1)-S(2) bond lengths. There are two shorter (3.56 Å) and two longer (3.62 Å) Ba(1)-S(3) bond lengths. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one S(1), one S(2), one S(3), and one S(4) atom to form GaS4 tetrahedra that share corners with three equivalent Ba(1)S12 cuboctahedra,  a cornercorner with one Ga(1)S4 tetrahedra, corners with four equivalent Ga(2)S4 tetrahedra, and edges with two equivalent Ba(1)S12 cuboctahedra. The Ga(1)-S(1) bond length is 2.33 Å. The Ga(1)-S(2) bond length is 2.27 Å. The Ga(1)-S(3) bond length is 2.26 Å. The Ga(1)-S(4) bond length is 2.26 Å. In the second Ga site, Ga(2) is bonded to one S(2), one S(3), and two equivalent S(1) atoms to form GaS4 tetrahedra that share corners with two equivalent Ba(1)S12 cuboctahedra, corners with two equivalent Ga(2)S4 tetrahedra, corners with four equivalent Ga(1)S4 tetrahedra, and edges with two equivalent Ba(1)S12 cuboctahedra. The Ga(2)-S(2) bond length is 2.23 Å. The Ga(2)-S(3) bond length is 2.23 Å. There is one shorter (2.33 Å) and one longer (2.34 Å) Ga(2)-S(1) bond length. There are four inequivalent S sites. In the first S site, S(1) is bonded in a distorted trigonal non-coplanar geometry to one Ba(1), one Ga(1), and two equivalent Ga(2) atoms. In the second S site, S(2) is bonded in a distorted water-like geometry to two equivalent Ba(1), one Ga(1), and one Ga(2) atom. In the third S site, S(3) is bonded in a distorted water-like geometry to two equivalent Ba(1), one Ga(1), and one Ga(2) atom. In the fourth S site, S(4) is bonded in a distorted water-like geometry to two equivalent Ba(1) and two equivalent Ga(1) atoms.