InGaSnO5 crystallizes in the monoclinic P2/m space group. There are two inequivalent In sites. In the first In site, In(1) is bonded to one O(10), one O(5), two equivalent O(3), and two equivalent O(7) atoms to form InO6 octahedra that share corners with two equivalent Sn(1)O6 octahedra,  a cornercorner with one Ga(1)O4 tetrahedra, corners with four equivalent Ga(2)O4 tetrahedra, edges with two equivalent In(1)O6 octahedra, and edges with two equivalent In(2)O6 octahedra. The corner-sharing octahedral tilt angles are 52°. In the second In site, In(2) is bonded to one O(1), one O(3), two equivalent O(5), and two equivalent O(6) atoms to form InO6 octahedra that share corners with four equivalent Sn(3)O6 octahedra,  a cornercorner with one Ga(2)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra, edges with two equivalent In(1)O6 octahedra, and edges with two equivalent In(2)O6 octahedra. The corner-sharing octahedral tilt angles range from 51-54°. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(4), one O(5), and two equivalent O(9) atoms to form GaO4 tetrahedra that share  a cornercorner with one In(1)O6 octahedra, corners with two equivalent In(2)O6 octahedra, corners with two equivalent Sn(1)O6 octahedra, corners with two equivalent Sn(2)O6 octahedra, and corners with two equivalent Ga(1)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 55-65°. In the second Ga site, Ga(2) is bonded to one O(3), one O(8), and two equivalent O(10) atoms to form GaO4 tetrahedra that share  a cornercorner with one In(2)O6 octahedra, corners with two equivalent Sn(3)O6 octahedra, corners with four equivalent In(1)O6 octahedra, and corners with two equivalent Ga(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 56-69°. There are three inequivalent Sn sites. In the first Sn site, Sn(1) is bonded to two equivalent O(7) and four equivalent O(4) atoms to form SnO6 octahedra that share corners with four equivalent In(1)O6 octahedra, corners with four equivalent Ga(1)O4 tetrahedra, and edges with two equivalent Sn(1)O6 octahedra. The corner-sharing octahedral tilt angles are 52°. In the second Sn site, Sn(2) is bonded to two equivalent O(9) and four equivalent O(2) atoms to form SnO6 octahedra that share corners with four equivalent Sn(3)O6 octahedra, corners with four equivalent Ga(1)O4 tetrahedra, and edges with two equivalent Sn(2)O6 octahedra. The corner-sharing octahedral tilt angles are 52°. In the third Sn site, Sn(3) is bonded to one O(2), one O(6), two equivalent O(1), and two equivalent O(8) atoms to form SnO6 octahedra that share corners with two equivalent Sn(2)O6 octahedra, corners with four equivalent In(2)O6 octahedra, corners with two equivalent Ga(2)O4 tetrahedra, and edges with two equivalent Sn(3)O6 octahedra. The corner-sharing octahedral tilt angles range from 51-54°. There are ten inequivalent O sites. In the first O site, O(1) is bonded in a trigonal planar geometry to one In(2) and two equivalent Sn(3) atoms. In the second O site, O(2) is bonded in a trigonal planar geometry to one Sn(3) and two equivalent Sn(2) atoms. In the third O site, O(3) is bonded to one In(2), two equivalent In(1), and one Ga(2) atom to form a mixture of distorted edge and corner-sharing OIn3Ga tetrahedra. In the fourth O site, O(4) is bonded in a distorted trigonal planar geometry to one Ga(1) and two equivalent Sn(1) atoms. In the fifth O site, O(5) is bonded to one In(1), two equivalent In(2), and one Ga(1) atom to form a mixture of distorted edge and corner-sharing OIn3Ga tetrahedra. In the sixth O site, O(6) is bonded in a trigonal planar geometry to two equivalent In(2) and one Sn(3) atom. In the seventh O site, O(7) is bonded in a trigonal planar geometry to two equivalent In(1) and one Sn(1) atom. In the eighth O site, O(8) is bonded in a distorted trigonal planar geometry to one Ga(2) and two equivalent Sn(3) atoms. In the ninth O site, O(9) is bonded in a trigonal planar geometry to two equivalent Ga(1) and one Sn(2) atom. In the tenth O site, O(10) is bonded in a trigonal planar geometry to one In(1) and two equivalent Ga(2) atoms.
InGaSnO5 crystallizes in the monoclinic P2/m space group. There are two inequivalent In sites. In the first In site, In(1) is bonded to one O(10), one O(5), two equivalent O(3), and two equivalent O(7) atoms to form InO6 octahedra that share corners with two equivalent Sn(1)O6 octahedra,  a cornercorner with one Ga(1)O4 tetrahedra, corners with four equivalent Ga(2)O4 tetrahedra, edges with two equivalent In(1)O6 octahedra, and edges with two equivalent In(2)O6 octahedra. The corner-sharing octahedral tilt angles are 52°. The In(1)-O(10) bond length is 2.18 Å. The In(1)-O(5) bond length is 2.31 Å. Both In(1)-O(3) bond lengths are 2.22 Å. Both In(1)-O(7) bond lengths are 2.11 Å. In the second In site, In(2) is bonded to one O(1), one O(3), two equivalent O(5), and two equivalent O(6) atoms to form InO6 octahedra that share corners with four equivalent Sn(3)O6 octahedra,  a cornercorner with one Ga(2)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra, edges with two equivalent In(1)O6 octahedra, and edges with two equivalent In(2)O6 octahedra. The corner-sharing octahedral tilt angles range from 51-54°. The In(2)-O(1) bond length is 2.14 Å. The In(2)-O(3) bond length is 2.30 Å. Both In(2)-O(5) bond lengths are 2.24 Å. Both In(2)-O(6) bond lengths are 2.11 Å. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(4), one O(5), and two equivalent O(9) atoms to form GaO4 tetrahedra that share  a cornercorner with one In(1)O6 octahedra, corners with two equivalent In(2)O6 octahedra, corners with two equivalent Sn(1)O6 octahedra, corners with two equivalent Sn(2)O6 octahedra, and corners with two equivalent Ga(1)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 55-65°. The Ga(1)-O(4) bond length is 1.87 Å. The Ga(1)-O(5) bond length is 1.88 Å. Both Ga(1)-O(9) bond lengths are 1.91 Å. In the second Ga site, Ga(2) is bonded to one O(3), one O(8), and two equivalent O(10) atoms to form GaO4 tetrahedra that share  a cornercorner with one In(2)O6 octahedra, corners with two equivalent Sn(3)O6 octahedra, corners with four equivalent In(1)O6 octahedra, and corners with two equivalent Ga(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 56-69°. The Ga(2)-O(3) bond length is 1.90 Å. The Ga(2)-O(8) bond length is 1.88 Å. Both Ga(2)-O(10) bond lengths are 1.87 Å. There are three inequivalent Sn sites. In the first Sn site, Sn(1) is bonded to two equivalent O(7) and four equivalent O(4) atoms to form SnO6 octahedra that share corners with four equivalent In(1)O6 octahedra, corners with four equivalent Ga(1)O4 tetrahedra, and edges with two equivalent Sn(1)O6 octahedra. The corner-sharing octahedral tilt angles are 52°. Both Sn(1)-O(7) bond lengths are 2.02 Å. All Sn(1)-O(4) bond lengths are 2.14 Å. In the second Sn site, Sn(2) is bonded to two equivalent O(9) and four equivalent O(2) atoms to form SnO6 octahedra that share corners with four equivalent Sn(3)O6 octahedra, corners with four equivalent Ga(1)O4 tetrahedra, and edges with two equivalent Sn(2)O6 octahedra. The corner-sharing octahedral tilt angles are 52°. Both Sn(2)-O(9) bond lengths are 2.15 Å. All Sn(2)-O(2) bond lengths are 2.10 Å. In the third Sn site, Sn(3) is bonded to one O(2), one O(6), two equivalent O(1), and two equivalent O(8) atoms to form SnO6 octahedra that share corners with two equivalent Sn(2)O6 octahedra, corners with four equivalent In(2)O6 octahedra, corners with two equivalent Ga(2)O4 tetrahedra, and edges with two equivalent Sn(3)O6 octahedra. The corner-sharing octahedral tilt angles range from 51-54°. The Sn(3)-O(2) bond length is 2.14 Å. The Sn(3)-O(6) bond length is 2.04 Å. Both Sn(3)-O(1) bond lengths are 2.08 Å. Both Sn(3)-O(8) bond lengths are 2.14 Å. There are ten inequivalent O sites. In the first O site, O(1) is bonded in a trigonal planar geometry to one In(2) and two equivalent Sn(3) atoms. In the second O site, O(2) is bonded in a trigonal planar geometry to one Sn(3) and two equivalent Sn(2) atoms. In the third O site, O(3) is bonded to one In(2), two equivalent In(1), and one Ga(2) atom to form a mixture of distorted edge and corner-sharing OIn3Ga tetrahedra. In the fourth O site, O(4) is bonded in a distorted trigonal planar geometry to one Ga(1) and two equivalent Sn(1) atoms. In the fifth O site, O(5) is bonded to one In(1), two equivalent In(2), and one Ga(1) atom to form a mixture of distorted edge and corner-sharing OIn3Ga tetrahedra. In the sixth O site, O(6) is bonded in a trigonal planar geometry to two equivalent In(2) and one Sn(3) atom. In the seventh O site, O(7) is bonded in a trigonal planar geometry to two equivalent In(1) and one Sn(1) atom. In the eighth O site, O(8) is bonded in a distorted trigonal planar geometry to one Ga(2) and two equivalent Sn(3) atoms. In the ninth O site, O(9) is bonded in a trigonal planar geometry to two equivalent Ga(1) and one Sn(2) atom. In the tenth O site, O(10) is bonded in a trigonal planar geometry to one In(1) and two equivalent Ga(2) atoms.