  In this paper, we present an analysis for treating the spectroscopic
ellipsometry response of Si/Ge superlattices (SL) with embedded Ge dots.
Spectroscopic ellipsometry (SE) measurement at room temperature was used to
investigate optical and electronic properties of Si/Ge SL which were grown on
silicon (Si) wafers having <111> crystallographic orientation. The results of
the SE analysis between 200 nm and 1000 nm indicate that the SL system can
effectively be described using interdiffusion/intermixing model by assuming a
multicrystalline Si and Si1-xGex intermixing layers. The electronic transitions
deduced from analysis reveal Si, Ge and alloying related critical energy
points.

Mesoscale and Nanoscale Physics