  We have fabricated all II-VI semiconductor resonant tunneling diodes based on
the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the
quantum well, and studied their current-voltage characteristics. When subjected
to an external magnetic field the resulting spin splitting of the levels in the
quantum well leads to a splitting of the transmission resonance into two
separate peaks. This is interpreted as evidence of tunneling transport through
spin polarized levels, and could be the first step towards a voltage controlled
spin filter.

Mesoscale and Nanoscale Physics;Materials Science