  A theoretical investigation of the excess energy dissipation of highly
excited photoinjected electrons in both wurtzite and zincblende GaN is
presented. The calculations are performed by solving numerically coupled
quantum transport equations for the carriers and the acoustic, transversal and
longitudinal optical phonon in order to derive the evolution of their
nonequilibrium temperatures, dubbed quasi-temperatures. It is shown that the
electron energy dissipation is always faster in the wurtzite structure than in
zincblende, both occurring in a subpicosecond time scale (< 0.2 ps).

Materials Science