  Confinement of the electron gas along one of the spatial directions opens an
avenue for studying fundamentals of quantum transport along the side of
numerous practical electronic applications, with high-electron-mobility
transistors being a prominent example. A heterojunction of two materials with
dissimilar electronic polarisation can be used for engineering of the
conducting channel. Extension of this concept to single-layer materials leads
to one-dimensional electron gas (1DEG). MoS2/WS2 lateral heterostructure is
used as a prototype for the realisation of 1DEG. The electronic polarisation
discontinuity is achieved by straining the heterojunction taking advantage of
dissimilarities in the piezoelectric coupling between MoS2 and WS2. A complete
theory that describes an induced electric field profile in lateral
heterojunctions of two-dimensional materials is proposed and verified by first
principle calculations.

Materials Science;Mesoscale and Nanoscale Physics