  We present measurements of resistivity $\rho$ in highly oriented $LaNiO_3$
films grown on $LaAlO_3$ substrates by using a pulsed laser deposition
technique. The experimental data are found to follow a universal $\rho (T)
\propto T^{3/2}$ dependence for the entire temperature interval ($20K<T<300K$).
The observed behavior has been attributed to a resonant scattering of electrons
on antiferromagnetic fluctuations (with a characteristic energy $\hbar \omega
_{sf}\simeq 2.1meV$) triggered by spin-density wave propagating through the
interface boundary of $LaNiO_3/LaAlO_3$ sandwich.

Materials Science