  Semi-analytical predictions for the transients of spin-dependent transport
and recombination rates through localized states in semiconductors during
coherent electron spin excitation are made for the case of weakly spin-coupled
charge carrier ensembles. The results show that the on-resonant Rabi frequency
of electrically or optically detected spin-oscillation doubles abruptly as the
strength of the resonant microwave field gamma B_1 exceeds the Larmor frequency
separation within the pair of charge carrier states between which the transport
or recombination transition takes place. For the case of a Larmor frequency
separation of the order of gamma B_1 and arbitrary excitation frequencies, the
charge carrier pairs exhibit four different nutation frequencies. From the
calculations, a simple set of equations for the prediction of these frequencies
is derived.

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