  The Kondo effect, which originates from the screening of a localized magnetic
moment by a spin-spin interaction, is widely observed in non-artificial
magnetic materials, artificial quantum dots, and carbon nanotubes. In devices
based on quantum dots or carbon nanotubes that target quantum information
applications, the Kondo effect can be tuned by a gate voltage, a magnetic
field, or light. However, the manipulation of the Kondo effect in
non-artificial materials has not been thoroughly studied; in particular, the
artificial creation of the Kondo effect remains unexplored. Per this subject
study, however, a new route for the optical creation of the Kondo effect in the
non-artificial material $p$-type semiconductor CeZn$_{3}$P$_{3}$ is presented.
The Kondo effect emerges under visible-light illumination of the material by a
continuous-wave laser diode and is ultimately revealed by photoinduced
electrical resistivity, which clearly exhibits a logarithmic temperature
dependency. By contrast, a La-based compound (LaZn$_{3}$P$_{3}$) displays only
normal metallic behavior under similar illumination. The photoinduced Kondo
effect, which occurs at higher temperatures when compared with the Kondo effect
in artificial systems, provides a potential new range of operation for not only
quantum information/computation devices but also for operation of magneto-optic
devices thereby expanding the range of device applications based on the Kondo
effect.

Strongly Correlated Electrons