  We demonstrate the fabrication of an ultra thin gallium film, also known as
gallenene, beneath epitaxial graphene on 6H-SiC under ambient conditions
triggered by liquid gallium intercalation. Gallenene has been fabricated using
the liquid metal intercalation, achieving lateral intercalation and diffusion
of Ga atoms at room temperature on square centimeter areas limited only by the
graphene samples' size. The stepwise self-propagation of the gallenene film
below the epitaxial graphene surface on the macroscopic scale was observed by
optical microscopy shortly after the initial processing without further
physical or chemical treatment. Directional Ga diffusion of gallenene occurs on
SiC terraces since the terrace steps form an energetic barrier
(Ehrlich-Schwoebel barrier),retarding the gallenene propagation. The subsequent
conversion of the epitaxial graphene into quasi free-standing bilayer graphene
(QFBLG) and the graphene-gallenene heterostack interactions have been analyzed
by XPS and Raman measurements. The results reveal a novel approach for
controlled fabrication of wafer-scale gallenene as well as for two-dimensional
heterostructures and stacks based on the interaction between liquid metal and
epitaxial graphene.
  Please note, this work was also titled as Graphene meets gallenene -- A
straightforward approach to developing large-area heterostacks by gallium
self-propagation
https://www.researchgate.net/publication/333451130_Graphene_meets_gallenene_-_A_straightforward_approach_to_developing_large-area_heterostacks_by_gallium_self-propagation

Materials Science