  In this work, the electronic and optical properties of Si$_{1-x}$Ge$_x$O$_2$
at equilibrium and non-equilibrium condition were calculated using a full
potential linear augmented plane wave plus local orbital method. The effect of
Si and Ge on electronic and optical properties of Si$_{1-x}$Ge$_x$O$_2$ is
investigated. It was found that Si$_{1-x}$Ge$_x$O$_2$ compounds could be used
as a high-K in electronics devices

Materials Science