  B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic
(AF-F) phase transitions in the vicinity of room temperature. Manipulation of
the N\'eel order via AF-F phase transition and recent experimental observation
of the anisotropic magnetoresistance in antiferromagnetic FeRh has proven that
FeRh is a promising candidate for antiferromagnetic memory material. In this
work, we demonstrate sequential write and read operations in antiferromagnetic
memory resistors made of B2-orderd FeRh thin films by a magnetic field and
electric current only. Our demonstration of writing and reading at ambient room
temperature opens a realistic pathway towards operational antiferromagnetic
memory devices.

Materials Science