  We have analyzed the temperature and intensity dependence of the open-circuit
voltage of InGaN/GaN multi-quantum well solar cells up to 725 K and more than
1000 suns. We show that the simple ABC model routinely used to analyze the
measured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce the
temperature and intensity dependence of the measured open-circuit voltage if a
temperature-dependent Shockley-Read-Hall lifetime is used and device heating is
taken into account.

Applied Physics