  Cu2Ta4O12 (CTaO) thin films were successfully deposited on Si(100) substrates
by pulsed-laser deposition technique. The crystalline structure and the surface
morphology of the CTaO thin films were strongly affected by substrate
temperature, oxygen pressure and target - substrate distance. In general during
deposition of CTaO the formation of a Ta2O5 phase appeared, on which CTaO grew
with different orientations. We report on the experimental set-up, details for
film deposition and the film properties determined by SEM, EDX and XRD.

Materials Science