  Here, we report successful single crystal growth of SnSb2Te4 using the
self-flux method. Unidirectional crystal growth is confirmed through X Ray
Diffraction (XRD) pattern taken on mechanically cleaved crystal flake while the
rietveld refined Powder XRD (PXRD) pattern confirms the phase purity of the
grown crystal. Scanning Electron Microscopy (SEM) image and Energy Dispersive
X-Ray analysis (EDAX) confirm crystalline morphology and exact stoichiometry of
constituent elements. Vibrational Modes observed in Raman spectra also confirm
the formation of the SnSb2Te4 phase. DC resistivity measurements confirm the
metallic character of the grown crystal. Magneto-transport measurements up to
5T show a nonsaturating low magneto-resistance percentage. V type cusp and
Hikami Larkin Nagaoka (HLN) fitting at lower field confirms the Weak
Anti-localization (WAL) effect in SnSb2Te4. Density Functional Theory (DFT)
calculations were showing topological non-trivial electronic band structure. It
is the first-ever report on MR study and WAL analysis of SnSb2Te4 single
crystal.

Materials Science;Strongly Correlated Electrons