  In the present investigation resistivity Vs temperature measurements have
been performed for solgel prepared pure and Ni doped CdO (NDO) thin films. The
semiconducting behavior i.e. negative temperature coefficient of resistivity
(TCR) of pure CdO thin film through-out the whole temperature range can be
attributed mainly due to concentration dependent thermally activation mechanism
of the carriers. The semiconductor to metal transition (SMT) for NDO thin films
has been elucidated via combined effect of involved grain boundaries, ionic
impurities, phonon scattering and carrier activation.

Materials Science