  We report on the low-energy electron irradiated 4H-SiC material studied by
means of deep-level transient spectroscopy (DLTS) and Laplace-DLTS. Electron
irradiation has introduced the following deep level defects: EH1 and EH3
previously assigned to carbon interstitial-related defects, and M-center, a
metastable defect also recently assigned to carbon interstitial defects. We
propose that EH1 and EH3 are identical to M1 and M3 and assign them to C_i^(= )
(h) and C_i^(0 ) (h), respectively. Moreover, we provide direct evidence that
Laplace-DLTS can be used as an excellent tool to distinguish otherwise
identical DLTS signals associated with S1 (VSi) and EH1 (Ci).

Materials Science