  Electrical and optical properties of amorphous vanadium oxide thin films
obtained by electrochemical anodic oxidation are studied. It is shown that
under cathodic polarization the hydrogen insertion into vanadium oxide from an
electrolyte occurs. Metal-insulator transition in amorphous HxVO2 is found to
be preserved up to high concentration (x ~ 1.5) of hydrogen. Memory switching
with the N-type negative differential resistance, associated with the H+ ionic
transfer, is observed in "V/hydrated amorphous vanadium oxide/Au" sandwich
structures.

Applied Physics;Materials Science