  This paper presents vertical (001) oriented $\beta$-Ga$_2$O$_3$ field plated
(FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric
field oxide. A thin drift layer of 1.7 $\mu m$ was used to enable a
punch-through (PT) field profile and very low differential specific
on-resistance (R$_{on-sp}$) of 0.32 m$\Omega$-cm$^{2}$. The extreme
permittivity field plate oxide facilitated the lateral spread of the electric
field profile beyond the field plate edge and enabled a breakdown voltage
($V_{br}$) of 687 V. The edge termination efficiency increases from 13.5 $\%$
for non-field plated structure to 63 $\%$ for high permittivity field plate
structure. The surface breakdown electric field was extracted to be 5.45 MV/cm
at the center of the anode region using TCAD simulations. The high permittivity
field plated SBD demonstrated a record high Baliga figure of merit (BFOM) of
1.47 GW/cm$^{2}$ showing the potential of Ga$_2$O$_3$ power devices for
multi-kilovolt class applications.

Materials Science;Applied Physics