  PtSe2 is attracting considerable attention as a high mobility two-dimensional
material with envisionned applications in microelectronics, photodetection and
spintronics. The growth of high quality PtSe2 on insulating substrates with
wafer-scale uniformity is a prerequisite for electronic transport
investigations and practical use in devices. Here, we report the growth of
highly oriented few-layers PtSe2 on ZnO(0001) by molecular beam epitaxy. The
crystalline structure of the films is characterized with electron and X-ray
diffraction, atomic force microscopy and transmission electron microscopy. The
comparison with PtSe2 layers grown on graphene, sapphire, mica, SiO2 and
Pt(111) shows that among insulating substrates, ZnO(0001) yields films of
superior structural quality. Hall measurements performed on epitaxial ZnO/PtSe2
with 5 monolayers of PtSe2 show a clear semiconducting behaviour and a high
mobility in excess of 200 cm2V 1s-1 at room temperature and up to 447 cm2V-1s-1
at low temperature.

Materials Science