  Layered transition-metal dichalcogenides (TMDs) family are gaining increasing
importance due to their unique electronic band structures, promising interplay
among light, valley (pseudospin), charge and spin degrees of freedom. They
possess large intrinsic spin-orbit interaction which make them most relevant
for the emerging field of spin-orbitronics. Here we report on the conversion of
spin current to charge current in MoS2 monolayer. Using spin pumping from a
ferromagnetic layer (10 nm of cobalt) we find that the spin to charge
conversion is highly efficient. Analysis in the frame of the inverse
Rashba-Edelstein (RE) effect yields a RE length in excess of 4 nm at room
temperature. Furthermore, owing to the semiconducting nature of MoS$_{2}$, it
is found that back-gating allows electrical field control of the
spin-relaxation rate of the MoS$_{2}$-metallic stack.

Mesoscale and Nanoscale Physics