  Effects of disorder on the electronic transport properties of graphene are
strongly affected by the Dirac nature of the charge carriers in graphene. This
is particularly pronounced near the Dirac point, where relativistic charge
carriers cannot efficiently screen the impurity potential. We have studied
time-dependent conductance fluctuations and magnetoresistance in graphene in
the close vicinity of the Dirac point. We show that the fluctuations are due to
the quantum interference effects due to scattering on impurities, and find an
unusually large reduction of the relative noise power in magnetic field,
possibly indicating that an additional symmetry plays an important role in this
regime.

Mesoscale and Nanoscale Physics