  The scattering of carriers by charged dislocations in semiconductors is
studied within the framework of the linearized Boltzmann transport theory with
an emphasis on examining consequences of the extreme anisotropy of the
scattering potential. A new closed-form approximate expression for the carrier
mobility valid for all temperatures is proposed. The ratios of quantum and
transport scattering times are evaluated after averaging over the anisotropy in
the relaxation time. The value of the Hall scattering factor computed for
charged dislocation scattering indicates that there may be a factor of two
error in the experimental mobility estimates using the Hall data. An expression
for the resistivity tensor when the dislocations are tilted with respect to the
plane of transport is derived. Finally an expression for the isotropic
relaxation time is derived when the dislocations are located within the sample
with a uniform angular distribution.

Disordered Systems and Neural Networks