  We show that the extrinsic spin Hall effect can be engineered in monolayer
graphene by decoration with small doses of adatoms, molecules, or nanoparticles
originating local spin-orbit perturbations. The analysis of the single impurity
scattering problem shows that intrinsic and Rashba spin-orbit local couplings
enhance the spin Hall effect via skew scattering of charge carriers in the
resonant regime. The solution of the transport equations for a random ensemble
of spin-orbit impurities reveals that giant spin Hall currents are within the
reach of the current state of the art in device fabrication. The spin Hall
effect is robust with respect to thermal fluctuations and disorder averaging.

Mesoscale and Nanoscale Physics