  The scattering of electrons on impurities with internal degrees of freedom is
bound to produce the signatures of the scatterer's own dynamics and results in
nontrivial electronic transport properties. Previous studies of polaronic
impurities in low-dimensional structures, like molecular junctions and
one-dimensional nanowire models, have shown that perturbative treatments cannot
account for a complex energy dependence of the scattering cross section in such
systems. Here we derive the exact solution of polaronic impurities shaping the
electronic transport in bulk (3D) systems. In the model with a short-ranged
electron-phonon interaction, we solve for and sum over all elastic and
inelastic partial cross sections, abundant in resonant features. The
temperature dependence of the charge mobility shows the power-law dependence,
$\mu(T)\propto T^{-\nu}$, with $\nu$ being highly sensitive to impurity
parameters. The latter may explain nonuniversal power-law exponents observed
experimentally, e.g. in high-quality organic molecular semiconductors.

Strongly Correlated Electrons