  We have evaluated the optical and electrical properties of a far-infrared
(IR) transparent electrode for extrinsic germanium (Ge) photoconductors at 4 K,
which was fabricated by molecular beam epitaxy (MBE). As a far-IR transparent
electrode, an aluminum (Al)-doped Ge layer is formed at well-optimized doping
concentration and layer thickness in terms of the three requirements: high
far-IR transmittance, low resistivity, and excellent ohmic contact. The
Al-doped Ge layer has the far-IR transmittance of >95 % within the wavelength
range of 40--200 microns, while low resistivity (~5 ohm-cm) and ohmic contact
are ensured at 4 K. We demonstrate the applicability of the MBE technology in
fabricating the far-IR transparent electrode satisfying the above requirements.

Materials Science;Instrumentation and Methods for Astrophysics