  Spintronic devices based on antiferromagnetic (AFM) materials hold the
promise of fast switching speeds and robustness against magnetic fields.
Different device concepts have been predicted and experimentally demonstrated,
such as low-temperature AFM tunnel junctions that operate as spin-valves, or
room-temperature AFM memory, for which either thermal heating in combination
with magnetic fields, or N\'eel spin-orbit torque is used for the information
writing process. On the other hand, piezoelectric materials were employed to
control magnetism by electric fields in multiferroic heterostructures, which
suppresses Joule heating caused by switching currents and may enable low
energy-consuming electronic devices. Here, we combine the two material classes
to explore changes of the resistance of the high-N\'eel-temperature
antiferromagnet MnPt induced by piezoelectric strain. We find two non-volatile
resistance states at room temperature and zero electric field, which are stable
in magnetic fields up to 60 T. Furthermore, the strain-induced resistance
switching process is insensitive to magnetic fields. Integration in a tunnel
junction can further amplify the electroresistance. The tunneling anisotropic
magnetoresistance reaches ~11.2% at room temperature. Overall, we demonstrate a
piezoelectric, strain-controlled AFM memory which is fully operational in
strong magnetic fields and has potential for low-energy and high-density memory
applications.

Materials Science;Mesoscale and Nanoscale Physics;Applied Physics