  New developments in quantitative sputter depth profiling during the past ten
years are reviewed, with special emphasis on the experimental achievement of
ultrahigh depth resolution (below 2 nm for sputtered depths larger than 10 nm).
In this region, the depth resolution function generally is asymmetric
(i.e.non-Gaussian) and it is governed by the three fundamental parameters:
atomic mixing length, roughness and information depth. The so called
mxing-roughness-information depth (MRI)-model and its application to the
quantitative reconstruction of the in-depth distribution of composition, with a
typical accuracy of one monolayer and better, is demonstrated for SIMS and AES
depth profiles. Based on the combination of the above three parameters, the
ultimate depth resolution is predicted to be about 0.7-1.0 nm. Up to now,
values of 1.4-1.6 nm have been reported, and the use of low energy molecular
ions, e.g. by using sulfur hexafluoride as sputtering gas, has recently pushed
the mixing length down to 0.4-0.6 nm. However, particularly in depth profiling
of multilayers, it can be shown that minimizing the rouhgness parameter,
including the straggling of the mixing length, is most important for the
achievement of the ultimate depth resolution.

Materials Science