  We report the observation of tunneling anisotropic magnetothermopower, a
voltage response to a temperature difference across an interface between a
normal and a magnetic semiconductor. The resulting voltage is related to the
energy derivative of the density of states in the magnetic material, and thus
has a strongly anisotropic response to the direction of magnetization in the
material. The effect will have relevance to the operation of semiconductor
spintronic devices, and may indeed already play a role in correctly
interpreting the details of some earlier spin injection studies.

Mesoscale and Nanoscale Physics