  We report results from an efficient, robust, ab-initio method for
self-consistent calculations of electronic and structural properties of Ge. Our
non-relativistic calculations employed a generalized gradient approximation
(GGA) potential and the linear combination of atomic orbitals (LCAO) formalism.
The distinctive feature of our computations stem from the use of
Bagayoko-Zhao-Williams-Ekuma-Franklin (BZW-EF) method. Our results are in
agreement with experimental ones where the latter are available. In particular,
our theoretical, indirect band gap of 0.65 eV, at the experimental lattice
constant of 5.66 \AA{}, is in excellent agreement with experiment. Our
predicted, equilibrium lattice constant is 5.63 \AA{}, with a corresponding
indirect band gap of 0.65 eV and a bulk modulus of 80 GPa. We also calculated
the effective masses in various directions with respect to the $\Gamma$ point.

Materials Science