  Phosphorene is a single elemental two-dimensional semiconductor that has
quickly emerged as a high mobility material for transistors and optoelectronic
devices. In addition, being a 2D material, it can sustain high levels of
strain, enabling sensitive modification of its electronic properties. In this
paper, we investigate the strain dependent electrical properties of phosphorene
nanocrystals. Performing extensive calculations we determine electrical
conductance as a function uniaxial as well as biaxial strain stimulus, and
uncover a unique zone phase diagram. This enables us to uncover for the first
time conductance oscillations in pristine phopshorene, by simple application of
strain. We show that how such unconventional current-voltage behaviour is
tuneable by the nature of strain, and how an additional gate voltage can
modulate amplitude (peak to valley ratio) of the observed phenomena and its
switching efficiency. Furthermore, we show that the switching is highly robust
against doping and defects. Our detailed results present new leads for
innovations in strain based gauging and high-frequency nanoelectronic switches
of phosphorene.

Mesoscale and Nanoscale Physics