  Magnetotransport properties of p-InMnAs layers are studied in pulsed magnetic
fields up to 30 T. Samples were prepared by the laser deposition and annealed
by ruby laser pulses. Well annealed samples show p-type conductivity while they
were n-type before the annealing. Surprisingly the anomalous Hall effect
resistance in paramagnetic state (T>40 K) and in strong magnetic fields (B > 20
T) appears to be greater than that in ferromagnetic state (T <= 40 K), while
the longitudinal resistance rises with the temperature decrease. The negative
magnetoresistance saturates in magnetic fields higher then 10T at T near 4 K
only, whereas the saturation fields of the anomalous Hall effect resistance are
much less (around 2 T at 30K). The total reduction of resistance exceeds 10
times in magnetic fields around of 10T. The obtained results are interpreted on
the base of the assumptions of the non-uniform distribution of Mn atoms acting
as acceptors, the local ferromagnetic transition and the percolation-like
character of the film conductivity, which prevailed under conditions of the
strong fluctuations of the exchange interaction. Characteristic scales of the
magneto-electric nonuniformity are estimated using analysis of the mesoscopic
fluctuations of the non-diagonal components of the magnetoresistivity tensor.

Materials Science;Mesoscale and Nanoscale Physics