  Application of Bardeen's tunneling theory to magnetic tunnel junctions having
a general degree of atomic disorder reveals the close relationship between
magneto-conduction and voltage-driven pseudo-torque, as well as the thickness
dependence of tunnel-polarization factors. Among the results: 1) The torque
generally varies as sin theta at constant applied voltage. 2) Whenever
polarization factors are well defined, the voltage-driven torque on each moment
is uniquely proportional to the polarization factor of the other magnet. 3) At
finite applied voltage, this relation predicts significant voltage-asymmetry in
the torque. For one sign of voltage the torque remains substantial even when
the magnetoconductance is greatly diminished. 4) A broadly defined junction
model, called ideal middle, allows for atomic disorder within the magnets and
F/I interface regions. In this model, the spin dependence of a state-weighting
factor proportional to the sum over general state index of evaluated within the
(e.g. vacuum) barrier generalizes the local state density in previous theories
of the tunnel-polarization factor. 5) For small applied voltage,
tunnel-polarization factors remain legitimate up to first order in the inverse
thickness of the ideal middle. An algebraic formula describes the first-order
corrections to polarization factors in terms of newly defined lateral
auto-correllation scales.

Mesoscale and Nanoscale Physics;Materials Science