  In this paper we present a comprehensive model for the tunneling current of
the metal-insulator-graphene heterostructure, based on the Bardeen Transfer
Hamiltonian method, of the metal-insulator-graphene heterostructure. As a
particular case we have studied the metal-graphene junction, unveiling the role
played by different electrical and physical parameters in determining the
differential contact resistance.

Mesoscale and Nanoscale Physics;Materials Science