  Recently, the internal gettering process has become one of the main
operations for manufacturing of semiconductor devices of CZ Si. However,
methods for the direct inspection of the internal gettering efficiency and
stability have been practically absent thus far. The purpose of this paper is
to present such a method developed on the basis of law-angle mid-IR-light
scattering technique (LALS), which has been successfully applied thus far for
the investigation of large-scale electrically active defect accumulations
(LSDAs) in semiconductor crystals.

Materials Science;Optics