  The wide research interest for the potential nanoelectronics applications are
attracted by the organic and inorganic monolayer materials. In this work, we
have studied the organic monolayer such as trichloro
(1H,1H,2H,2H-perfluorooctyl)-silane (FOTS), hexamethyldisilazane (HMDS) and
inorganic monolayers such as hexagonal - boron nitride (h-BN) and molybdenum
disulfide (MoS2) based MOS devices. The organic monolayer based configurations
are Au/FOTS/p-Si and Au/HMDS/p-Si. The inorganic monolayer based configurations
are Au/MoS2/SiO2/p-Si and Au/h-BN/SiO2/p-Si. These configurations were examined
and compared with Au/SiO2/p-Si MOS configuration using the Multi-dielectric
Energy Band Diagram Program (MEBDP) and MOSFeT simulation software. The C-V and
I-V characteristics of MOS and MOSFET of FOTS, HMDS, h-BN, MoS2 and SiO2 were
reported. The results show that the above configurations are suitable for
designing MOSFETs with smaller drain induced barrier lowering (DIBL) and
reduced threshold voltage. We noted that the above configurations are better
than 2nm thick dielectric SiO2 based MOSFET with a channel length of 10nm.

Mesoscale and Nanoscale Physics;Computational Physics