  We develop a theoretic description of the photogalvanic current induced by a
high frequency radiation in asymmetric nanostructures and show that it
describes well the results of numerical simulations. Our studies allow to
understand the origin of the electronic ratchet transport in such systems and
show that they can be used for creation of new types of detectors operating at
room temperature in a terahertz radiation range.

Mesoscale and Nanoscale Physics