  Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials
form efficient devices for utilizing the properties of both classes of
materials. Graphene/silicon (G/Si) Schottky diodes have been studied
extensively with respect to their optoelectronic properties. Here, we introduce
a method to analyze measured capacitance-voltage data of G/Si Schottky diodes
connected in parallel with G/silicon dioxide/Si (GIS) capacitors. We also
demonstrate the accurate extraction of the built-in potential ($\Phi$$_{bi}$)
and the Schottky barrier height from the measurement data independent of the
Richardson constant.

Applied Physics;Mesoscale and Nanoscale Physics