  Transport in ultrathin graphite grown on silicon carbide is dominated by the
electron-doped epitaxial layer at the interface. Weak anti-localization in 2D
samples manifests itself as a broad cusp-like depression in the longitudinal
resistance for magnetic fields 10 mT$< B <$ 5 T. An extremely sharp
weak-localization resistance peak at B=0 is also observed. These features
quantitatively agree with graphene weak-(anti)localization theory implying the
chiral electronic character of the samples. Scattering contributions from the
trapped charges in the substrate and from trigonal warping due to the graphite
layer on top are tentatively identified. The Shubnikov-de Haas oscillations are
remarkably small and show an anomalous Berry's phase.

Mesoscale and Nanoscale Physics;Materials Science