  We present design, fabrication and characterization of a MEMS VCSEL which
utilizes a silicon-on-insulator wafer for the microelectromechanical system and
encapsulates the MEMS by direct InP wafer bonding, which improves the
protection and control of the tuning element. This procedure enables a more
robust fabrication, a larger free spectral range and facilitates bidirectional
tuning of the MEMS element. The MEMS VCSEL device uses a high contrast grating
mirror on a MEMS stage as the bottom mirror, a wafer bonded InP with quantum
wells for amplification and a deposited dielectric DBR as the top mirror. A 40
nm tuning range and a mechanical resonance frequency in excess of 2 MHz are
demonstrated.

Applied Physics;Optics