  In this paper, we report the effect of write voltage and frequency on
memristor based Resistive Random Access Memory (RRAM). The above said
parameters have been investigated on the linear drift model of memristor. With
a variation of write voltage from 0.2V to 1.2V and a subsequent frequency
modulation from 1, 2, 4, 10, 100 and 200 Hz the corresponding effects on memory
window, Low Resistance State (LRS) and High Resistance State (HRS) have been
reported. Thus the lifetime ({\tau}) reliability analysis of memristor based
RRAM is carried out using above results. It is found that, the HRS is
independent of write voltage, whereas LRS shows dependency on write voltage and
frequency. The simulation results showcase that the memristor possess higher
memory window and lifetime ({\tau}) in the higher voltage with lower frequency
region, which has been attributed to the fewer data losses in the memory
architecture.

Emerging Technologies