  We study the resistively detected nuclear magnetic resonance (NMR) in an
AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine
interaction between electron and nuclear spins is modulated by tuning a
position of the two-dimensional electron systems with respect to the polarized
nuclear spins using the side-gate voltages. The NMR frequency is systematically
controlled by the gate-tuned technique in a semiconductor device.

Mesoscale and Nanoscale Physics;Materials Science