  We demonstrate non-volatile optical functionality by embedding multi-layer
$HfO_2/Al_2O_3$ memristors with III-V/Si photonics. The wafer-bonded III-V/Si
memristor facilitates non-volatile optical functionality for a variety of
devices such as Mach-Zehnder Interferometers (MZIs), and (de-)interleaver
filters. The MZI optical memristor exhibits non-volatile optical phase shifts
$> \pi (\Delta n_{g} > 2.70 \times 10^{-3}$) with ~ 30 dB extinction ratio
while consuming 0 electrical power consumption in a true "set-and-forget"
operation. We demonstrate 6 non-volatile states with each state capable of 4
Gbps modulation. III-V/Si (de-)interleavers were also demonstrated to exhibit
memristive non-volatile passband transformation with full set/reset states.
Time duration tests were performed on all devices and indicated non-volatility
up to 24 hours and most likely beyond. To the best of our knowledge, we have
demonstrated for the first time, non-volatile III-V/Si optical memristors with
the largest electric-field driven phase shifts and reconfigurable filters with
the lowest power consumption.

Optics;Emerging Technologies;Applied Physics