  Topological antiferromagnetic (AFM) spintronics is an emerging field of
research, which exploits the N\'eel vector to control the topological
electronic states and the associated spin-dependent transport properties. A
recently discovered N\'eel spin-orbit torque has been proposed to electrically
manipulate Dirac band crossings in antiferromagnets; however, a reliable AFM
material to realize these properties in practice is missing. Here, we predict
that room temperature AFM metal MnPd$_{2}$ allows the electrical control of the
Dirac nodal line by the N\'eel spin-orbit torque. Based on first-principles
density functional theory calculations, we show that reorientation of the
N\'eel vector leads to switching between the symmetry-protected degenerate
state and the gapped state associated with the dispersive Dirac nodal line at
the Fermi energy. The calculated spin Hall conductivity strongly depends on the
N\'eel vector orientation and can be used to experimentally detect the
predicted effect using a proposed spin-orbit torque device. Our results
indicate that AFM Dirac nodal line metal MnPd$_{2}$ represents a promising
material for topological AFM spintronics.

Mesoscale and Nanoscale Physics;Materials Science