  In recent years, antiferromagnetic spintronics has received much attention
since ideal antiferromagnets do not produce stray fields and are much more
stable to external magnetic fields compared to materials with net
magnetization. Akin to antiferromagnets, compensated ferrimagnets have zero net
magnetization but have the potential for large spin-polarization and strong out
of plane magnetic anisotropy, and, hence, are ideal candidates for high density
memory applications. Here, we demonstrate that a fully compensated magnetic
state with a tunable magnetic anisotropy is realized in Mn-Pt-Ga based
tetragonal Heusler thin films. Furthermore, we show that a bilayer formed from
a fully compensated and a partially compensated Mn-Pt-Ga layer, exhibits a
large interfacial exchange bias up to room temperature. The present work
establishes a novel design principle for spintronic devices that are formed
from materials with similar elemental compositions and nearly identical crystal
and electronic structures. Such devices are of significant practical value due
to their improved properties such as thermal stability. The flexible nature of
Heusler materials to achieve tunable magnetizations, and anisotropies within
closely matched materials provides a new direction to the growing field of
antiferromagnetic spintronics.

Materials Science