  The quantum anomalous Hall effect (QAHE) is a fundamental quantum transport
phenomenon that manifests as a quantized transverse conductance in response to
a longitudinally applied electric field in the absence of an external magnetic
field, and promises to have immense application potentials in future
dissipation-less quantum electronics. Here we present a novel kinetic pathway
to realize the QAHE at high temperatures by $n$-$p$ codoping of
three-dimensional topological insulators. We provide proof-of-principle
numerical demonstration of this approach using vanadium-iodine (V-I) codoped
Sb$_2$Te$_3$ and demonstrate that, strikingly, even at low concentrations of
$\sim$2\% V and $\sim$1\% I, the system exhibits a quantized Hall conductance,
the tell-tale hallmark of QAHE, at temperatures of at least $\sim$ 50 Kelvin,
which is three orders of magnitude higher than the typical temperatures at
which it has been realized so far. The proposed approach is conceptually
general and may shed new light in experimental realization of high-temperature
QAHE.

Materials Science