New channel materials for CMOS; stained Si, strained SOI, SiGe, GeOI, III-V and materials with high mobility on insulator; carbon nanotubes; graphene and other two-dimensional materials.
New channel materials for CMOS: strained Si, strained SOI, SiGe, GeOI, III-V and high mobility materials on insulator; carbon nanotubes; graphene and other two-dimensional materials.