3 .. The semiconductor devices according to claim 1 wherein the dielectric layer comprises Al, Si, O, N, Ti, Ta, lead-zirconate-titanate (PZT), barium strontium titanate (BST), Ta2O5, Al2O3, SiO2, or combinations thereof.
3. The semiconductor device according to claim 1, wherein the dielectric layer comprises Al, Si, O, N, Ti, Ta, lead-zirconate-titanate (PZT), barium strontium titanate (BST), Ta2O5, Al2O3, SiO2, or combinations thereof.