Will silicon dioxide react with hydrochloric acid? I have the following equation, based on the reaction of $\ce{SiO2}$ with $\ce{HF}:$

$$\ce{SiO2 + HCl -&gt; SiCl4 + 2 H2O}$$

I want to know if this reaction is indeed feasible, what conditions may be needed to induce it, or if it isn't possible why that's the case.
According to the paper by Chung and Sturm [1], $\ce{HCl}$ will do a very small amount of etching at high enough temperatures (525 °C will give you about 1 nm/min), but the presence of hydrogen limits the reaction because the formation of $\ce{HCl}$ is preferred to the formation of $\ce{SiCl4}.$

References


Chung, K. H.; Sturm, J. C. Chlorine Etching for In-Situ Low-Temperature Silicon Surface Cleaning for Epitaxy Applications. In ECS Transactions; ECS: Chicago, Illinois, 2007; Vol. 6, pp 401–407. DOI: 10.1149/1.2727426.