Wolfspeed, A Cree Company, released a new 28V, 30W GaN HEMT bare die at this year’s IEEE Wireless and Microwave Technology Conference (WAMICON), which took place April 11 – 13, 2016 in Clearwater Beach, Fla.
Designed for up to 8GHz operation, the new 28V GaN HEMT die exhibits 12dB typical small signal gain at 8GHz, 17dB typical small signal gain at 4GHz, and 30W typical PSAT. Additionally, due to the superior material properties of GaN compared to silicon (Si) and gallium arsenide (GaAs), the new 28V, 30W GaN HEMT die also deliver higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths than Si and GaAs transistors.
As such, the CGH80030D is ideal for use in a diverse range of applications, including: UHF-, L-, S-, and C-Band radar; broadband, public safety, and ISM (industrial, scientific, and medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios, among others.
During the event, Wolfspeed also revealed that their GaN-on-SiC RF power transistors recently completed qualification testing to demonstrate compliance with NASA EEE-INST-002 Level 1 reliability standards for satellite communications and radar equipment.
For more information about Wolfspeed’s new CGH80030D 28V, 30W GaN HEMT bare die, please visit http://www.wolfspeed.com/cgh80030d.
For all other inquiries about Wolfspeed RF products and foundry services, please visithttp://www.wolfspeed.com/rf or contact Ryan Baker, marketing manager and North American sales manager, Wolfspeed, at ryan.baker@wolfspeed.com or 919-407-5302.