Citation: Liu, W.,Teo, K.L.,Li, M.F.,Chua, S.J.,Uchida, K.,Tokunaga, H.,Akutsu, N.,Matsumoto, K. (1998-06-15). The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures. Journal of Crystal Growth 189-190 : 648-651. ScholarBank@NUS Repository.
Abstract: By using photovoltaic spectroscopy and contactless electroreflectance spectroscopy, large electric field was found to exist in wurztite GaN/InGaN/AlGaN multilayer structures. The electric field strengths in the GaN layer and the AlGaN layer were obtained from the analysis of the Franz-Keldysh oscillations in contactless electroreflectance spectra. These electric fields were attributed to be induced by the piezoelectric effect in wurztite nitride systems. © 1998 Elsevier Science B.V. All rights reserved.