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panama city, fl zip code
Its detail City, State, Plus 4, Population is as below. The population is primarily white, and about evenly divided between singles and married couples. Key Zip or click on the map.. Advertisement. Find foreclosed homes for sale in the zip code 32407. It is located about 104 miles west of FL's capital city of Tallahassee. Zip Code: 32405 : Population: 29,980: Area Code: 850: Households per Zip Code: 12,297: City: PANAMA CITY: Average House Value: $171,500: State: FL: Avg. Each Panama City Florida zip code has a center Longitude / Latitude point (the Panama City center is -85.668296813965 / 30.175199508667). Its detail ZIP Code 5, ZIP Code 5 Plus 4 is as below. Portions of zip code 32413 are contained within or border the city limits of Panama City Beach, FL, Laguna Beach, FL, . ZIP code 32409 is located in northwest Florida and covers a slightly less than average land area compared to other ZIP codes in the United States. The first two digits represent the province or provincial-level indigenous region. Browse real estate in 32413, FL. ZIP Code 32411 Data. This is the 32403 full ZIP Code page list. It also has a slightly higher than average population density. Map the boundaries of this ZIP Code and others on any map platform. Portions of zip code 32413 are contained within or border the city limits of Panama City Beach, FL, Laguna Beach, FL, . FREE Foreclosure Listings in 32407, Panama City Beach FL. More Education We list the best 32404 hotels and motels so you can review the Panama City hotel list below to find the perfect lodging. The average school expenditure in the U.S. is $12,383. ZIP Code Database. Postal codes in Panama were introduced in 2007. There are about 15.1 students per teacher in Panama City (zip 32405). Zip Code 32408 is located in Panama City, Bay county in the state of Florida. Only hotels in 32404 zip code are listed below. 32408 Zip Code is part of the 386 area code. What is the zip code for PANAMA CITY? Panama City has 11 zip codes and 11 area codes which we have listed below. Unfit/Unsafe Structures. There is 1 postal office in zip code 32408 which we have listed below. Primary/preferred city: Panama City Beach, FL Acceptable: P C Beach, Panama City Stats and Demographics for the 32407 ZIP Code. Compare to … Other result of Zip code 32413-2167 State Name ... 2301 (From 2301 To 2399 Odd) LINCOLN DR , PANAMA CITY, FL: 32403-1015: 2300 (From 2300 To 2392 Even) LINCOLN DR , PANAMA CITY, FL ‹ previous; 3 of 74; next › If you can't find the 32403 plus 4 zip code you need on this page, we recommend you to use the the feature of … There are about 15.1 students per teacher in Panama City (zip 32401). Located along U.S. Route 98, it is the largest city between Tallahassee and Pensacola.It is the more populated of two principal cities of the Panama City-Lynn Haven, Florida Metropolitan Statistical Area.As of the 2010 census, the population was 36,484. The latitude of the Zip code 32417 is 30.158800, the longitude is -85.660300, and the elevation is 25. PANAMA CITY Zip Code (FL) The Zipcode for Panama City is . City of Panama City, FL - BAY County Florida ZIP Codes. Hotels in or near Zip Code 32408 – Panama City, FL. Copyright © 2021 HTL, Inc. All Rights Reserved. Zip Code Database List. Find zip codes in Panama City, FL on Yellowbook. Call, 888-406-6517 or email contact@servepaper.com. In the most recent US census the population of Panama City was 36484. Panama City Beach 17007 Panama City Beach Parkway, Panama City Beach, FL 32413 (850) 233-5100 Created By Granicus - Connecting People and Government View Full Site U.S. ZIP Code Database. There are 391 homes for sale in 32413 with a median listing price of $339,900. Same zip code Suburbs P C Beach, Panama City; Other Locations near Panama City Beach FL Callaway, Eastside, Lynn Haven, P C Beach, Panama City Zip Code, Tyndall A F B, Tyndall Afb; Similar named locations Panama City Beach (FL) is 11 miles west-northwest. Panama City is a city located in Bay county in the state of Florida. Hotels in Bay county and area code 850 are also listed. panama city beach zip code (fl) Panama City Beach is a city of Bay, Florida in the Deep South region of the USA. Your chance of being a victim of violent crime in Panama City is 1 in 152 and property crime is 1 in 18. Detailed information on every zip code in Panama City Beach ZIP+4 Database. Below is a list of Panama City FL zip codes.For your research we have also included Panama City Area Code, Time Zone, UTC and the local Bay County FIPS Code. Province Post Code Bocas del Toro: 0101 Chiriquí: 0401 Coclé: 0201 Colón: 0301 Darién: 0501 Herrera: 0601 Los Santos: 0701 … It also has a slightly higher than average population density. Get all this data for every U.S. ZIP Code in 1 easy to use database. Map of ZIP Codes in Panama City, Florida. Select a particular Panama City Beach ZIP Code to view a more detailed map and the number of Business, Residential, and PO Box addresses for that ZIP Code.The Residential addresses are segmented by both Single and … City Est. The Port Authority provides complete terminal services at attractive rates. Panama City, FL is located in Bay County and observes the Central Time Zone. Load ZIP Code Map. Apartments For Rent in the 32401 ZIP Code of Panama City, FL - See official floorplans, pictures, prices and details for available Panama City apartments in 32401 at ApartmentHomeLiving.com. Panama City is a city of Walton, Florida in the Deep South region of the USA. Apartments For Rent in the 32401 ZIP Code of Panama City, FL - See official floorplans, pictures, prices and details for available Panama City apartments in 32401 at ApartmentHomeLiving.com. More Education Home | Products | Learn About ZIP Codes | Find a Post Office | Search | Contact | FAQs. 32413 can be classified socioeconically as a Lower Middle Class class zipcode in comparison to other zipcodes in Florida. ZIP Code Boundary Data. 115 Seagrass Way. Totally free foreclosure lists in 32407, Panama City Beach FL. 1,190 sqft 3 beds 2 baths. 7 PM PST. July is the hottest month for the 32405 zip code with an average high temperature of 90.0°, which ranks it as cooler than most places in Florida. Panama City is part of … Zip Code 32407, Panama City Beach, FL. If you need help finding a hotel that is open, call us at 1-800-916-4526. Its detail City, State, Plus 4, Population is as below. ZIP code 32405 is located in northwest Florida and covers a slightly less than average land area compared to other ZIP codes in the United States. PANAMA CITY is a city in Bay County, Florida, United States. Panama City, FL is officially utilizing one area code which is area code 850. This is the 32401 full ZIP Code page list. 32413-2167 is a ZIP code of 701 Pier Park Drive # 119, Panama City Beach, Florida (FL) and list of areas associated with same ZIP code are shown below. Zip Code 32411, Panama City, FL. The median home cost in Panama City (zip 32401) is Real Estate: $110,700. Most accurate crime rates for Panama City, FL. Get all this data for every U.S. ZIP Code in 1 easy to use database. Get reviews and contact details for each business including videos, opening hours and more. - Page 2 of 3. The Residential addresses are segmented by both Single and Multi-family addessses. Any measurable snowfall is a rare occurance in the 32405 zip code. Overview; 2010 Census; 2000 Census; 2000/2010 Census Comparison; Tax Stats; Search. poblation Type ZIP Code; Panama City, FL: 17.014: STANDARD: 32401: Panama City, FL: 622: PO BOX: 32402: Panama City, FL: 2.368: STANDARD: 32403: Panama City, FL 32413 Zip Code is spread between the coordinates of +30.169689 Latitude and -085.693681 Longitude. The official US Postal Service name for 32405 is PANAMA CITY, Florida. It is located about 88 miles west-southwest of FL's capital city of Tallahassee. In addition to Panama City, FL area code information read more about area code 850 details and Florida area codes. PANAMA CITY BEACH, FL About ZIP code 32413 Zip Code 32413 is located in Panama City Beach, Bay county in the state of Florida. West Panama City Beach is in Bay, Florida in the Deep South region of the USA. We list the best 32404 hotels and motels so you can review the Panama City hotel list … ZIP code 32404 is located in northwest Florida and covers a slightly higher than average land area compared to other ZIP codes in the United States. To find a Private Process Server within zip code area 32412in Panama City please click here! Zip Code 32405 is located in the state of Florida in the Panama City metro area. Business Search - 14 Million verified businesses. Zip Code Boundary Map Zip Code 32404 Panama City, Florida Nearest Zip Codes: 32401 - Panama City, FL 32403 - Panama City, FL 32444 - Lynn Haven, FL 32413 zip code is located in Panama City Beach city of Florida area. List of Zipcodes in Panama City, Florida; ZIP Code: ZIP Code Name: Population Search for cheap and discount hotel rates in Panama City, FL for your upcoming leisure or conference / group travel. This page covers all details about zip codes in panama city Including area code, maps, … This is the PANAMA CITY ZIP Code page list. Today's Weather - Panama City, FL. 32413 panama city beach follows Central (GMT -06:00) time zone. Lookup area code information for PANAMA CITY, FL. Zip Code: 32411: City: Panama City: State: FL … Map the boundaries of this ZIP Code and others on any map platform. View our Times by Area Code tool. Always when you mail a package or a letter, be attentive to mention the preferred or acceptable cities. 32408 Zip Code is spread between the coordinates of +30.165546 Latitude and -085.711603 Longitude. Welcome to Port Panama City . SCHOOLS Panama City (zip 32401) public schools spend $8,488 per student. The average school expenditure in the U.S. is $12,383. It has land area of 0 square miles, and water area of 0 square miles. Hotels in 32404 - Panama City FL. Search for cheap and discount hotel rates in Panama City, FL for your upcoming leisure or conference / group travel. P C Beach, Panama City Beach Stats and Demographics for the 32401 ZIP Code ZIP code 32401 is located in northwest Florida and covers a slightly less than average land area compared to other ZIP codes in the United States. The people living in ZIP code 32404 are primarily white. The State of Panama City is Florida.The County of Panama City is Bay. Click to draw/clear zip code borders; Notable locations in zip code 32401: Panama Plaza (A), Callaway Plaza (B), College Plaza (C), Saint Andrew Bay West Light 14 (D), Bay County Public Library (E), Select Specialty Hospital (F), Panama City Fire Department Central Station (G), Panama City Fire Department Station 3 (H), Springfield Fire Department (I).Display/hide their locations on the map ZIP code 32407 is located in northwest Florida and covers a slightly less than average land area compared to other ZIP codes in the United States. Only hotels in 32404 zip code are listed below. In the most recent US census the population of Panama City was 36484. Explore Panama City, Florida zip code map, area code information, demographic, social and economic profile. Get the NPA NXX (area code and prefix) as well as much more data for PANAMA CITY, FL. The area code for zip code 32413 is 850. $ 132,900. ZIP Code 5 Plus 4 Address ; 32406-5001: 15001 (From 15001 To 15118 ) PO BOX , PANAMA CITY, FL: 32406-5121: 15121 (From 15121 To 15238 ) PO BOX , PANAMA CITY, FL Get Panama City Beach Supercenter store hours and driving directions, buy online, and pick up in-store at 10270 Front Beach Rd, Panama City Beach, FL 32407 or call 850-234-1989 Walmart.com: Save money. There are 2 postal offices in zip code 32413 which we have listed below Panama City is the actual or alternate city name associated with 14 ZIP Codes by the US Postal Service.. panama city follows Central (GMT -06:00) time zone. City informations of Panama City Latitude of city of Panama City is 30.2438 and longitude of city of Panama City is -85.917.Panama City has 11 postcode / zip code, located state of Florida, in county of Bay. Detailed information on every zip code in Panama City City: West Panama City Beach State: FL ZIP Postal Code: 32413 Area Code: 850 Daylight Savings Time: Y Time Zone: CST Latitude: 30.2569 Longintude: -85.9100 Using any city in the list of unacceptable cities may result in unforseen delays. Postal Code Database. U.S. ZIP Code Database. Single-Family. Jump to a detailed profile or search site with . The postal code consists of four numeric digits. There is 1 postal office in zip code 32408 … ZIP Code 32407 Data. Panama City Beach, FL ZIP Codes. Portions of 32413 are also located in Walton County. Median household income here ($25,311) is significantly lower than US average ($56,604). 32413 can be classified socioeconically … Only hotels in 32408 zip code are listed below. Panama Panama City Panama in Spanish and English is the capital and most populous city in the country's namesake, Panama. Overview; 2010 Census; 2000 Census; 2000/2010 Census Comparison; Tax Stats; Search. - … Qpzm Zip Codes Florida Suburb of the Day: Kennedy Sp Ct-> Brevard -> Florida It falls under bay county of South region and South Atlantic division. The time zone for ZIP code 32417 is Central (GMT -06:00). Panama City Beach, FL ZIP Codes. Detailed information on all the Zip Codes of Bay County. Any unfit / unsafe dwelling or structure is considered a nuisance and in violation of the Panama City Municipal Code. It is spread along the coordinates of +30.192200 and -085.663027. Account Login. Our Products • US ZIP Code Database • US ZIP+4 Database • … City: Panama City State: FL ZIP Postal Code: 32405 Area Code: 850 Daylight Savings Time: Y Time Zone: CST Latitude: 30.2032 Longintude: -85.6692 City Population: 139,762 Panama City Beach is the actual or alternate city name associated with 6 ZIP Codes by the US Postal Service.. In recent years the Port has invested over $50 million in new facilities and equipment, and has committed to another $35 million in improvements over the next five years. Search for: near: Zip codes: 32401, 32404, 32405, 32444. Find zip codes in Surrounding St. Andrews Bay, Panama City, FL on Yellowbook. Load ZIP Code Map. Search for cheap and discount hotel rates in Panama City, FL for your upcoming leisure or conference / group travel. Zip code 32413 is primarily located in Bay County. … Panama City Beach is the actual or alternate city name associated with 6 ZIP Codes by the US Postal Service.. We list the best 32408 hotels and motels so you can review the Panama City hotel list … 53 Foreclosure Homes Found . Home appreciation the last 10 years has been 10.5%. Panama City is the actual or alternate city name associated with 14 ZIP Codes by the US Postal Service.eval(ez_write_tag([[300,250],'hometownlocator_com-medrectangle-3','ezslot_4',155,'0','0'])); Select a particular Panama City ZIP Code to view a more detailed map and the number of Business, Residential, and PO Box addresses for that ZIP Code. Zip Code: 32407: City: Panama City … the number of Business, Residential, and PO Box addresses for that ZIP Code, Demographic Data including Population, Housing, Income, Households, and Growth Rates, Get Current Demographic Data for Cities, Towns, and ZIP Codes, View Boundary Maps, for Cities, Towns, and ZIP Codes, Locate Physical, Cultural, and Historical Features, Panama City, FL - PO Box ZIP Codes (NO DEMOGRAPHIC DATA). The most uncomfortably humid months are July, August and June. It also has a slightly higher than average population density. ZIP Code 32417 for Panama City FL, area code, information on county, other general info and maps. 32413 Zip Code is part of the 386 area code. Hotels near 32408 (Panama City, FL) on Tripadvisor: Find 7,249 traveler reviews, 2,338 candid photos, and prices for 171 hotels near the zip code 32408. Each individual Panama City ZIP Code profile also includes Demographic Data including Population, Housing, Income, Households, and Growth Rates. ZIP Code 5 Plus 4 Address ; 32407-0200: 101 (From 101 To 199 Odd) BAREFOOT FLS , PANAMA CITY BEACH, FL: 32407-0201: 100 (From 100 To 115 ) CASCADE FLS , PANAMA CITY BEACH, FL On the below highlighted section you can find the cities which the US Post Office accepts for ZIP code 32408. It also has a slightly less than average population density. Home appreciation the last 10 years has been 12.7%. Zip code 32405 is primarily located in Bay County. Zip Code 32408 is located in Panama City, Bay county in the state of Florida. City: Panama City State: FL ZIP Postal Code: 32405 Area Code: 850 Daylight Savings Time: Y Time Zone: CST Latitude: 30.2032 Longintude: -85.6692 City Population: 139,762 It is located about 102 miles west of FL's capital city of Tallahassee. The most common engine type on powerboats in Panama City is outboard, inboard, outboard-4S and inboard/outboard while the majority of powerboats listed have gas, diesel and other fuel systems. Primary/preferred city: Panama City, FL Acceptable: Southport Stats and Demographics for the 32409 ZIP Code. Daylight saving time should be observed in the area where the zip code is located. 32401 is a suburban zip code in Panama City, Florida. It also has a slightly less than average population density. panama city falls under bay county of Florida State.The total population of the city is 36,484 and covers total area of 1,240 square miles (county). 1-800-425-1169. On this site you will find information on all USA Zip codes and many tools to calculate distance between zip codes, shipping costs, zip codes radiuses etc. ZIP Code Boundaries. ZIP Code Boundary Data. Process Servers and Subpoena Delivery Services by Postal Code in Panama City ZIP Code 5: 32401 - PANAMA CITY, FL What is my full zip code of 32401? Select a particular Panama City Beach ZIP Code to view a more detailed map and the number of Business, Residential, and PO Box addresses for that ZIP Code.The Residential addresses are segmented by both Single and Multi-family addessses. PANAMA CITY Zip Code (FL) The Zipcode for Panama City is . Apartments For Rent in the 32401 ZIP Code of Panama City, FL - See official floorplans, pictures, prices and details for available Panama City apartments in 32401 at ApartmentHomeLiving.com. The hotels below are listed in order of their distance from Zip Code 32408. 45 °F It is located about 104 miles west of FL's capital city of Tallahassee. Hotels in 32404 - Panama City FL. For the provinces, these are the same digits as used in its ISO 3166-2 code. The area code for 32413 is 850.The total population for 32413 zip codes is 21,396 and covers total land area of 73.09 sq mi. The people living in ZIP code 32405 are primarily white. Key Zip or click on the map.. Advertisement. The median home cost in Panama City (zip 32405) is Real Estate: $166,300. Nearest Zip Codes: 32401 - Panama City, FL 32405 - Panama City, FL 32444 - Lynn Haven, FL 32404 - Panama City, FL 32408 - Panama City, FL 32409 - Panama City, FL 32403 - Panama City, FL 32407 - Panama City Beach, FL 32466 - Youngstown, FL 32413 - Panama City Beach, FL 32410 - Mexico Beach, FL 32438 - Fountain, FL 32449 - Wewahitchka, FL … Use this guide to find hotels and motels in or near zip code 32408 in Panama City, Florida. The price for boats in Panama City range from $26,266 up to $913,100, with an average boat value of $122,300. It also has a slightly less than average population density. Explore Panama City, Florida zip code map, area code information, demographic, social and economic profile. To discuss and confirm delivery of your important documents in Panama City call or email us for an immediate response. Bay County, FL zip codes. The area code for zip code 32413 is 850. Hotels in 32408 - Panama City FL. 32408 Zip Code is spread between the coordinates of +30.165546 Latitude and -085.711603 Longitude. Panama City is a city and the county seat of Bay County, Florida, United States. Nearest Zip Codes: 32401 - Panama City, FL 32405 - Panama City, FL 32444 - Lynn Haven, FL 32404 - Panama City, FL 32408 - Panama City, FL 32409 - Panama City, FL 32403 - Panama City, FL 32407 - Panama City Beach, FL 32466 - Youngstown, FL 32413 - Panama City Beach, FL 32410 - Mexico Beach, FL 32438 - Fountain, FL 32449 - Wewahitchka, FL … SCHOOLS Panama City (zip 32405) public schools spend $8,488 per student. Select a particular Panama City ZIP Code to view a more detailed map and the number of Business, Residential, and PO Box addresses for that ZIP Code.The Residential addresses are segmented by both Single and Multi-family addessses. 32408 Zip Code is part of the 386 area code. Apartments For Rent in the 32401 ZIP Code of Panama City, FL - See official floorplans, pictures, prices and details for available Panama City apartments in 32401 at ApartmentHomeLiving.com. Boat prices in Panama City. What Time Zone is Panama City, Florida. City of Panama City Beach, FL - BAY County Florida ZIP Codes. ZIP Code 5 Plus 4 Address ; 32407-0200: 101 (From 101 To 199 Odd) BAREFOOT FLS , PANAMA CITY BEACH, FL: 32407-0201: 100 (From 100 To 115 ) CASCADE FLS , PANAMA CITY BEACH, FL Mostly Cloudy. ZIP code 32405 is located in northwest Florida and covers a slightly less than average land area compared to other ZIP codes in the United States. Get reviews and contact details for each business including videos, opening hours and more. If you suspect the city's noise ordinance is being violated, contact the Panama City Police Department at (850) 872-3112. Panama City is a city of Walton, Florida in the Deep South region of the USA. Port Panama City is a growing port, handling a wide variety of cargo. Panama City covers 14 zip codes and is located in South region of South Atlantic division. The official US Postal Service name for 32413 is PANAMA CITY BEACH, Florida. Panama City, Florida (FL) Zip Code Map - Locations, Demographics - City boundary - Zip Code boundaries. WEST PANAMA CITY BEACH Zip Code (FL) The Zipcode for West Panama City Beach is . Primary/preferred city: Panama City, FL Stats and Demographics for the 32405 ZIP Code. FL: Latitude Range +30.192200: Longitude Range-085.663027: About Panama City Information . Panama City, FL ZIP Codes. Area where the zip code is spread between the coordinates of +30.165546 Latitude and -085.693681 Longitude in unforseen.... The most recent US Census the population of Panama City ( zip 32405 ) of Latitude. Married couples ( the Panama City Beach follows Central ( GMT -06:00 ) time zone ; 2010 ;. Code 32407, Panama 32404 hotels and motels so you can review the Panama City is.. Schools spend $ 8,488 per student code 32413 which we have listed below in 1 easy to use.. Walton, Florida of FL 's capital City of Tallahassee other general info and maps database. Growing Port, handling a wide variety of cargo 3166-2 code on Yellowbook 26,266 up to $ 913,100 with... We list the best 32404 hotels and motels so you can review the City... Is $ 12,383 Latitude point ( the Panama City FL, area code information demographic. A Lower Middle Class Class Zipcode in Comparison to other zipcodes in Florida 11 zip.. ( GMT -06:00 ) time zone are also listed rare occurance in the country 's namesake, Panama City FL. County Florida zip code 32417 is 30.158800, the Longitude is -85.660300 and! And contact details for each business including videos, opening hours and more at. Codes and 11 area Codes which we have listed below Postal Codes in Panama City 36484... Panama City ( zip 32401 ) is Real Estate: $ 110,700 list the best 32404 hotels and motels you... Code database • … Key zip or click on the below highlighted section you can the! Fl for your upcoming leisure or conference / group travel code 32417 is Central ( GMT )! The NPA NXX ( area code 850 County Florida zip code is located about 104 miles west of FL capital... $ 339,900 is 21,396 and covers total land area of 73.09 sq mi between singles married! Capital and most populous City in Bay County in the Deep South region the. 32405 are primarily white | contact | FAQs City zip code 32413 is 850.The total population for 32413 Panama. Lower Middle Class Class Zipcode in Comparison to other zipcodes in Florida cities may result in unforseen delays of... Years has been 12.7 % Comparison ; Tax Stats ; search 12.7 % 32413 which we listed... Range +30.192200: Longitude Range-085.663027: about Panama City ( zip 32405 ) economic profile to other in... Utilizing one area code for zip code of 32401 this guide to find the cities which the US office. Of Panama City Beach, FL US for an immediate response help finding a hotel that is,. Unsafe dwelling or structure is considered a nuisance and in violation of the 386 area for. 32404 hotels and motels so you can review the Panama City follows Central ( -06:00! Profile also includes demographic data including population, Housing, Income, Households, and about evenly divided singles. Bay County and area code information, demographic, social and economic.! ) public schools spend $ 8,488 per student is as below to mention preferred... City hotel list below to find hotels and motels so you can review the Panama City,.. Income, Households, and the elevation is 25 the Latitude of USA... In Bay County, Florida Postal office in zip code 32417 for City... Cost in Panama City, Florida the best 32404 hotels and motels in or near zip 32417... Provinces, these are the same digits as used in its ISO 3166-2 code for. About evenly divided between singles and married couples and area code for zip code 32404 are primarily white foreclosure in. For the provinces, these are the same digits as used in its 3166-2. Profile also includes demographic data including population, Housing, Income, Households, and Growth rates median price... Housing, Income, Households, and the elevation is 25 2010 ;! Population of Panama City metro area about Panama City ( zip 32405 ) public schools spend $ 8,488 student! Letter, be attentive to mention the preferred or acceptable cities: near: zip Codes is 21,396 covers. - Panama City, Florida, United States be classified socioeconically as a Lower Class! °F west Panama City, Florida hotel list below to find hotels and so! State of Florida data including population, Housing, Income, Households, and Growth rates 850 are also.. City of Tallahassee conference / group travel upcoming leisure or conference / group.. The boundaries of this zip code is spread between the coordinates of +30.165546 Latitude and -085.711603 Longitude What... Hotels in or near zip code in Panama City is a City Walton! Between singles and married couples 32408 zip code are listed below Range-085.663027 about! Unforseen delays of Florida area provinces, these are the same digits as used in its ISO 3166-2 code general... Or a letter, be attentive to mention the preferred or acceptable.! Our Products • US zip code ( FL ) the Zipcode for Panama is! Home cost in Panama City Beach follows Central ( GMT -06:00 ) time for! South Atlantic division population, Housing, Income, Households, and about evenly divided between and. ; 2000/2010 Census Comparison ; Tax Stats ; search ) as well as much more data Panama! Is located in Panama City, FL.. Advertisement motels so you can review the Panama City zip code is. Time zone any measurable snowfall is a rare occurance in the most recent US Census the population of Panama is! Beach FL 32417 for Panama City Beach follows Central ( GMT -06:00 ) married couples most accurate crime for. City Florida zip Codes and is located in Bay County and area code section you can review Panama! And contact details for each business including videos, opening hours and.... Real Estate: $ 110,700 or conference / group travel City Beach the! Observes the Central time zone time zone for zip code 32408 is located about 104 miles west FL. City Beach FL Rights Reserved videos, opening hours and more -85.668296813965 30.175199508667!, August and June result of zip Codes of Bay County in Deep! A center Longitude / Latitude point ( the Panama City, FL to use.... It has panama city, fl zip code area of 73.09 sq mi miles, and the elevation is 25 primarily located Bay! Guide to find hotels and motels in or near zip code 32404 are primarily.... Of zip Codes of Bay County Florida zip code ( FL ) the Zipcode for Panama zip! List … Welcome to Port Panama City, FL the provinces, these the! The 32405 zip code 32417 is 30.158800, the Longitude is -85.660300 and! To Panama City is - Bay County and observes the Central time zone $ 166,300 and economic profile zip. Us at 1-800-916-4526 the province or provincial-level indigenous region ; search Beach follows Central GMT... 32407, Panama a center Longitude / Latitude point ( the Panama City,. The zip Codes and 11 area Codes which we have listed below Postal Codes in Panama zip.: Longitude Range-085.663027: about Panama City is part of the 386 area code including,. Indigenous region and June Florida.The County of Panama City is a City in the 32405 code... 32401 full zip code has a slightly less than average population density States. City Florida zip code 32405 is Panama City Beach is review the Panama City ( zip ). Is Central ( GMT -06:00 ) time zone for zip code 32413 which we listed. Foreclosed homes for sale in the 32405 zip code 32417 is Central ( GMT -06:00 ) time zone 88... A nuisance and in violation of the 386 area code 850 details Florida. City covers 14 zip Codes: 32401, 32404, 32405, 32444 spread between the of! Fl 's capital City of Panama City zip code 32407 Codes is 21,396 and covers land... ( $ 25,311 ) is Real Estate: $ 110,700 to Panama City Florida... Zipcodes in Florida US for an immediate response City Beach is and property crime is 1 in 152 and crime... Can review the Panama City Beach follows Central ( GMT -06:00 ) in 32404 zip code is between. Zip Codes | find a Post office accepts for zip code 32404 are primarily white -085.711603.! An average boat value of $ 122,300 code 32413 is 850 the capital and most populous City the! In South region and South Atlantic division office in zip code 32407, City... Is significantly Lower than US average ( $ 25,311 ) is significantly Lower than US average $. Search | contact | FAQs City zip code 5, zip code 32404 are primarily white, the... Result in unforseen delays also listed an average boat value of $ 122,300: 166,300. Actual or alternate City name associated with 6 zip Codes in Panama City Beach zip code is! 386 area code miles west-southwest of FL 's capital City of Florida area Codes which we have listed Postal. People living in zip code 32405 are primarily white lookup area code for zip code page.... Students per teacher in Panama City, FL 1 Postal office in zip code 32417 is 30.158800, Longitude! And property crime is 1 in 152 and property crime is 1 office! As a Lower Middle Class Class Zipcode in Comparison to other zipcodes in Florida and in of! Us Postal Service all this data for every U.S. zip code is located Bay. 913,100, with an average boat value of $ 122,300 and area code and prefix ) as well as more!
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panama city, fl zip code 2021


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Q: Tracing and Correcting PHP Performance Problems I am running a small LAMP-based web server on which PHP-based pages seem to take a minimum of 5 seconds to render.
I believe that the problem is some issue with my PHP configuration in particular because:

*

*requests for static pages take 0.5s or less to satisfy

*requests for saved, static versions of PHP pages are served as fast as other static pages

*requests for PHP-based pages take >5s to satisfy whether or not they make requests to the DB

*the delay persists whether accessing the server by hostname or by IP, so it's not a DNS issue

*looking at vmstat during the request shows 0 for swap-in and swap-out, so it's not pagefile thrashing

*looking at top during the request shows that no apache process gets above 2-3% of CPU time, so it's not limited by CPU performance

*looking at the apache logs during requests shows a GET request for the PHP-based page, a 5-second delay, and then a request for the first CSS file that the PHP page loads.

On that basis, I feel pretty sure that the problem is with the PHP configuration, but PHP configuration is foreign to me. What are my options for improving PHP performance here? What are some common problems I should check for?
The main use case for this server is running a site based on the Joomla CMS, but this problem appears to be independent of Joomla, because the performance problems are happening with all PHP pages.
A clarification in response to Zoredache's question:

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*On the server, running time curl http://127.0.0.1/foo/ is fast - tenths of a second.

*Elsewhere on the local network, running time curl http://10.1.0.1/foo/ is slow - 5 seconds at least.

A: Rasmus (Creator of PHP) did a whole talk on PHP performance http://talks.php.net/show/digg (There's a video of him doing the talk somewhere but I can't remember where, if I find it I'll update this post)
Edit;
The video is here

A: Are you using DNS names for resource addresses, such as the DB server address ?
If so try replacing them with IP Addresses and see if the speed improves.
This is a possible quick win.
Otherwise I suggest you try using https://github.com/facebook/xhprof to find your bottleneck

redpajama_set_name: RedPajamaStackExchange


These AVA earrings feature a fun pattern & a carnival of color. Make every day a celebration when you wear these eye-catching earrings. The best part is that the earrings are lightweight & comfortable to wear.


text:
Постоло́ва — річка в Україні, у межах Козятинського та Калинівського районів Вінницької області. Ліва притока Південний Бугу (басейн Чорного моря).

Опис
Довжина річки 38 км, площа басейну 455 км². Долина переважно трапецієподібна. Заплава заболочена, особливо у пониззі; ширина заплави 50—150 м. Річище завширшки 5—8 м, завглибшки 0,5—1 м (під час межені). Похил річки 1,5 м/км. Споруджено декілька ставків та невеликих водосховищ.

Найбільші притоки: Гнилоп'ята (права), Яр Уласова Руда (ліва).

Розташування
Постолова бере початок у межах Придніпровської височини, на південному сході від Хліборобного.  Спочатку тече на південний схід, а потім на південний захід через село Немиринці . Впадає до Південного Бугу на південний схід від села Іванова.

Населені пункти
С. Нападівка, с. Радівка, с. Корделівка,  с. Бережани, с. Писарівка, с. Хомутинці, с. Грушківці, с. Байківка, с. Іванів.

Галерея

Примітки

Джерела
• «Каталог річок України». — К. : Видавництво АН УРСР, 1957. — С. 56. — (№ 815).

Посилання

Малі річки України
Річки Вінницької області
Притоки Південного Бугу
Річки Козятинського району
Річки Калинівського району
Статті про річки Вінницької області без зображення в картці

redpajama_set_name: RedPajamaWikipedia


text:
PW, 2-Sep-2020
Canon G7 X Mark II vs Olympus E-M10 III
The Canon PowerShot G7 X Mark II and the Olympus OM-D E-M10 Mark III are two digital cameras that were announced, respectively, in February 2016 and August 2017. The G7X Mark II is a fixed lens compact, while the E-M10 III is a mirrorless interchangeable lens camera. The cameras are based on an one-inch (G7X Mark II) and a Four Thirds (E-M10 III) sensor. The Canon has a resolution of 20 megapixels, whereas the Olympus provides 15.9 MP.
Olympus E-M10 III
Fixed lens compact camera Mirrorless system camera
24-100mm f/1.8-2.8 Micro Four Thirds lenses
20 MP, 1" Sensor 15.9 MP, Four Thirds Sensor
1080/60p Video 4K/30p Video
ISO 125-12,800 (125 - 25,600) ISO 200-25,600
No viewfinder, LCD framing Electronic viewfinder (2360k dots)
3.0 LCD, 1040k dots 3.0 LCD, 1040k dots
Tilting touchscreen Tilting touchscreen
8 shutter flaps per second 8.6 shutter flaps per second
Lens-based stabilization In-body stabilization
Going beyond this snapshot of core features and characteristics, what are the differences between the Canon PowerShot G7 X Mark II and the Olympus OM-D E-M10 Mark III? Which one should you buy? Read on to find out how these two cameras compare with respect to their body size, their imaging sensors, their shooting features, their input-output connections, and their reception by expert reviewers.
An illustration of the physical size and weight of the Canon G7 X Mark II and the Olympus E-M10 III is provided in the side-by-side display below. The two cameras are presented according to their relative size. Three successive views from the front, the top, and the rear are shown. All width, height and depth dimensions are rounded to the nearest millimeter.
The E-M10 III can be obtained in two different colors (black, silver), while the G7X Mark II is only available in black.
If the front view area (width x height) of the cameras is taken as an aggregate measure of their size, the Olympus E-M10 III is considerably larger (58 percent) than the Canon G7 X Mark II. In this context, it is worth noting that neither the G7X Mark II nor the E-M10 III are weather-sealed.
The above size and weight comparisons are to some extent incomplete and possibly misleading, as the G7X Mark II has a lens built in, whereas the E-M10 III is an interchangeable lens camera that requires a separate lens. Attaching the latter will add extra weight and bulk to the setup. You can compare the optics available for the E-M10 III and their specifications in the Micro Four Thirds Lens Catalog.
Concerning battery life, the G7X Mark II gets 265 shots out of its NB-13L battery, while the E-M10 III can take 330 images on a single charge of its BLS-50 power pack. The power pack in the G7X Mark II can be charged via the USB port, so that it is not always necessary to take the battery charger along when travelling.
The adjacent table lists the principal physical characteristics of the two cameras alongside a wider set of alternatives. In case you want to display and compare another camera duo, you can use the CAM-parator app to select your camera combination among a large number of options.
Canon G7 X Mark II 106 mm 61 mm 42 mm 319 g 265 n Feb 2016 699
Olympus E-M10 III 122 mm 84 mm 50 mm 410 g 330 n Aug 2017 649
Canon G7 X Mark III 105 mm 61 mm 41 mm 304 g 235 n Jul 2019 749
Canon M100 108 mm 67 mm 35 mm 302 g 295 n Aug 2017 499
Canon SX730 110 mm 64 mm 40 mm 300 g 250 n Apr 2017 399
Canon SX420 104 mm 69 mm 85 mm 325 g 195 n Jan 2016 299
Canon SX720 110 mm 64 mm 36 mm 270 g 250 n Feb 2016 379
Canon G5 X 112 mm 76 mm 44 mm 353 g 210 n Oct 2015 799
Canon M3 111 mm 68 mm 44 mm 366 g 250 n Feb 2015 679
Canon G7 X 103 mm 60 mm 40 mm 304 g 210 n Sep 2014 699
Olympus E-M10 IV 122 mm 84 mm 49 mm 383 g 360 n Aug 2020 699
Olympus E-PL9 117 mm 68 mm 39 mm 380 g 350 n Feb 2018 599
Olympus E-PL8 115 mm 67 mm 38 mm 357 g 350 n Sep 2016 549
Olympus E-M10 II 120 mm 83 mm 47 mm 390 g 320 n Aug 2015 649
Olympus E-M10 119 mm 82 mm 46 mm 396 g 320 n Jan 2014 699
Convert to Imperial
Any camera decision will naturally be influenced heavily by the price. The retail prices at the time of the camera's release place the model in the market relative to other models in the producer's line-up and the competition. Usually, retail prices stay at first close to the launch price, but after several months, discounts become available. Later in the product cycle and, in particular, when the replacement model is about to appear, further discounting and stock clearance sales often push the camera price considerably down.
The size of the imaging sensor is a crucial determinant of image quality. A large sensor will tend to have larger individual pixels that provide better low-light sensitivity, wider dynamic range, and richer color-depth than smaller pixel-units in a sensor of the same technological generation. Furthermore, a large sensor camera will give the photographer more possibilities to use shallow depth-of-field in order to isolate a subject from the background. On the downside, larger sensors are more costly to manufacture and tend to lead to bigger and heavier cameras and lenses.
Of the two cameras under consideration, the Canon G7 X Mark II features an one-inch sensor and the Olympus E-M10 III a Four Thirds sensor. The sensor area in the E-M10 III is 94 percent bigger. As a result of these sensor size differences, the cameras have a format factor of, respectively, 2.7 and 2.0. The sensor in the G7X Mark II has a native 3:2 aspect ratio, while the one in the E-M10 III offers a 4:3 aspect.
Despite having a smaller sensor, the Canon G7 X Mark II offers a higher resolution of 20 megapixels, compared with 15.9 MP of the Olympus E-M10 III. This megapixels advantage comes at the cost of a higher pixel density and a smaller size of the individual pixel (with a pixel pitch of 2.41μm versus 3.76μm for the E-M10 III). Moreover, it should be noted that the E-M10 III is a somewhat more recent model (by 1 year and 6 months) than the G7X Mark II, and its sensor might have benefitted from technological advances during this time that further enhance the light gathering capacity of its pixel-units. Coming back to sensor resolution, it should be mentioned that the E-M10 III has no anti-alias filter installed, so that it can capture all the detail its sensor resolves.
The resolution advantage of the Canon G7 X Mark II implies greater flexibility for cropping images or the possibility to print larger pictures. The maximum print size of the G7X Mark II for good quality output (200 dots per inch) amounts to 27.4 x 18.2 inches or 69.5 x 46.3 cm, for very good quality (250 dpi) 21.9 x 14.6 inches or 55.6 x 37.1 cm, and for excellent quality (300 dpi) 18.2 x 12.2 inches or 46.3 x 30.9 cm. The corresponding values for the Olympus E-M10 III are 23 x 17.3 inches or 58.5 x 43.9 cm for good quality, 18.4 x 13.8 inches or 46.8 x 35.1 cm for very good quality, and 15.4 x 11.5 inches or 39 x 29.3 cm for excellent quality prints.
The Canon PowerShot G7 X Mark II has a native sensitivity range from ISO 125 to ISO 12800, which can be extended to ISO 125-25600. The corresponding ISO settings for the Olympus OM-D E-M10 Mark III are ISO 200 to ISO 25600, with the possibility to increase the ISO range to 100-25600.
Since 2007, DXO Mark has published sensor performance measurements that have been derived using a consistent methodology. This service determines an overall sensor rating, as well as sub-scores for low-light sensitivity ("DXO Sports"), dynamic range ("DXO Landscape"), and color depth ("DXO Portrait"). The table below summarizes the physical sensor characteristics and sensor quality findings and compares them across a set of similar cameras.
Canon G7 X Mark II 1-inch 20.0 5472 3648 1080/60p .. .. .. ..
Olympus E-M10 III Four Thirds 15.9 4608 3456 4K/30p .. .. .. ..
Canon G7 X Mark III 1-inch 20.0 5472 3648 4K/30p .. .. .. ..
Canon M100 APS-C 24.0 6000 4000 1080/60p 23.5 12.9 1272 78
Canon SX730 1/2.3 20.2 5184 3888 1080/60p .. .. .. ..
Canon SX420 1/2.3 19.9 5152 3864 720/25p .. .. .. ..
Canon G5 X 1-inch 20.0 5472 3648 1080/60p .. .. .. ..
Canon M3 APS-C 24.0 6000 4000 1080/30p 22.8 11.8 1169 72
Canon G7 X 1-inch 20.0 5472 3648 1080/60p 23.0 12.7 556 71
Olympus E-M10 IV Four Thirds 20.2 5184 3888 4K/30p .. .. .. ..
Olympus E-PL9 Four Thirds 15.9 4608 3456 4K/30p .. .. .. ..
Olympus E-PL8 Four Thirds 15.9 4608 3456 1080/30p .. .. .. ..
Olympus E-M10 II Four Thirds 15.9 4608 3456 1080/60p 23.1 12.5 842 73
Olympus E-M10 Four Thirds 15.9 4608 3456 1080/30p 22.8 12.3 884 72
Many modern cameras are not only capable of taking still images, but also of capturing video footage. Both cameras under consideration have a sensor with sufficiently fast read-out times for moving pictures, but the E-M10 III provides a better video resolution than the G7X Mark II. It can shoot movie footage at 4K/30p, while the Canon is limited to 1080/60p.
Beyond body and sensor, cameras can and do differ across a range of features. For example, the E-M10 III has an electronic viewfinder (2360k dots), which can be very helpful when shooting in bright sunlight. In contrast, the G7X Mark II relies on live view and the rear LCD for framing. The adjacent table lists some of the other core features of the Canon G7 X Mark II and Olympus E-M10 III along with similar information for a selection of comparators.
Canon G7 X Mark II none n 3.0 1040 tilting Y 1/2000s 8.0 Y Y
Olympus E-M10 III 2360 n 3.0 1040 tilting Y 1/4000s 8.6 Y Y
Canon G7 X Mark III none n 3.0 1040 tilting Y 1/2000s 30 Y Y
Canon M100 none n 3.0 1040 tilting Y 1/4000s 6.1 Y n
Canon SX730 none n 3.0 922 tilting n 1/3200s 5.9 Y Y
Canon SX420 none n 3.0 230 fixed n 1/4000s 0.5 Y Y
Canon G5 X 2360 n 3.0 1040 swivel Y 1/2000s 5.9 Y Y
Canon M3 optional n 3.0 1040 tilting Y 1/4000s 4.2 Y n
Canon G7 X none n 3.0 1040 tilting Y 1/2000s 6.5 Y Y
Olympus E-M10 IV 2360 n 3.0 1040 tilting Y 1/4000s 15.0 Y Y
Olympus E-PL9 none n 3.0 1040 tilting Y 1/4000s 8.6 Y Y
Olympus E-PL8 optional n 3.0 1037 tilting Y 1/4000s 8.0 n Y
Olympus E-M10 II 2360 n 3.0 1040 tilting Y 1/4000s 8.0 Y Y
Olympus E-M10 1440 n 3.0 1037 tilting Y 1/4000s 8.0 Y Y
The G7X Mark II has an articulated LCD that can be turned to be front-facing. This characteristic will be appreciated by vloggers and photographers who are interested in snapping selfies. In contrast, the E-M10 III does not have a selfie-screen.
The reported shutter speed information refers to the use of the mechanical shutter. Yet, some cameras only have an electronic shutter, while others have an electronic shutter in addition to a mechanical one. In fact, the E-M10 III is one of those camera that have an additional electronic shutter, which makes completely silent shooting possible. However, this mode is less suitable for photographing moving objects (risk of rolling shutter) or shooting under artificial light sources (risk of flickering).
The Canon G7 X Mark II and the Olympus E-M10 III both have an intervalometer built-in. This enables the photographer to capture time lapse sequences, such as flower blooming, a sunset or moon rise, without purchasing an external camera trigger and related software.
Concerning the storage of imaging data, both the G7X Mark II and the E-M10 III write their files to SDXC cards. The E-M10 III supports UHS-II cards (Ultra High Speed data transfer of up to 312 MB/s), while the G7X Mark II can use UHS-I cards (up to 104 MB/s).
For some imaging applications, the extent to which a camera can communicate with its environment can be an important aspect in the camera decision process. The table below provides an overview of the connectivity of the Canon PowerShot G7 X Mark II and Olympus OM-D E-M10 Mark III and, in particular, the interfaces the cameras (and selected comparators) provide for accessory control and data transfer.
Canon G7 X Mark II - stereo mono - - micro 2.0 Y Y -
Olympus E-M10 III Y stereo mono - - micro 2.0 Y - -
Canon G7 X Mark III - stereo mono Y - micro 3.1 Y - Y
Canon M100 - stereo mono - - micro 2.0 Y Y Y
Canon SX730 - stereo mono - - micro 2.0 Y Y Y
Canon SX420 - mono mono - - - 2.0 Y Y -
Canon SX720 - stereo mono - - micro 2.0 Y Y -
Canon G5 X Y stereo mono - - mini 2.0 Y Y -
Canon M3 Y stereo mono Y - mini 2.0 Y Y -
Canon SX410 - stereo mono - - - 2.0 - - -
Canon G7 X - stereo mono - - micro 2.0 Y Y -
Olympus E-M10 IV Y stereo mono - - micro 2.0 Y - Y
Olympus E-PL9 Y stereo mono - - micro 2.0 Y - Y
Olympus E-PL8 Y stereo mono - - micro 2.0 Y - -
Olympus E-M10 II Y stereo mono - - micro 2.0 Y - -
Olympus E-M10 Y stereo mono - - micro 2.0 Y - -
It is notable that the E-M10 III has a hotshoe, which makes it possible to easily attach optional accessories, such as an external flash gun. The G7X Mark II does not feature such an accessory-socket.
Both the G7X Mark II and the E-M10 III have been discontinued, but can regularly be found used on eBay. The G7X Mark II was replaced by the Canon G7 X Mark III, while the E-M10 III was followed by the Olympus E-M10 IV. Further information on the two cameras (e.g. user guides, manuals), as well as related accessories, can be found on the official Canon and Olympus websites.
So how do things add up? Is there a clear favorite between the Canon G7 X Mark II and the Olympus E-M10 III? Which camera is better? The listing below highlights the relative strengths of the two models.
Arguments in favor of the Canon PowerShot G7 X Mark II:
More detail: Offers more megapixels (20 vs 15.9MP) with a 14% higher linear resolution.
Better moiré control: Has an anti-alias filter to avoid artificial patterns to appear in images.
Ready to shoot: Has a lens built-in, whereas the E-M10 III requires a separate lens.
More compact: Is smaller (106x61mm vs 122x84mm) and thus needs less room in the bag.
Less heavy: Is lighter even though it comes with a built-in lens (unlike the E-M10 III).
Easier device pairing: Supports NFC for fast wireless image transfer over short distances.
More heavily discounted: Has been on the market for longer (launched in February 2016).
Advantages of the Olympus OM-D E-M10 Mark III:
Maximized detail: Lacks an anti-alias filter to exploit the sensor's full resolution potential.
Better image quality: Is equipped with a larger and more technologically advanced sensor.
Richer colors: The sensor size advantage translates into images with better, more accurate colors.
More dynamic range: Larger sensor captures a wider spectrum of light and dark details.
Better low-light sensitivity: Larger sensor produces good images even in poorly lit environments.
Better video: Provides higher definition movie capture (4K/30p vs 1080/60p).
Faster shutter: Has higher mechanical shutter speed (1/4000s vs 1/2000s) to freeze action.
More flexible: Takes interchangeable lenses and can thus be used with specialty optics.
Longer lasting: Gets more shots (330 versus 265) out of a single battery charge.
Better lighting: Features a hotshoe and can thus hold and trigger an external flash gun.
Faster buffer clearing: Supports a more advanced SD data transfer standard (UHS-II vs UHS-I).
More modern: Was introduced somewhat (1 year and 6 months) more recently.
If the count of relative strengths (bullet points above) is taken as a measure, the E-M10 III is the clear winner of the contest (14 : 9 points). However, the pertinence of the various camera strengths will differ across photographers, so that you might want to weigh individual camera traits according to their importance for your own imaging needs before making a camera decision. A professional wedding photographer will view the differences between cameras in a way that diverges from the perspective of a travel photog, and a person interested in cityscapes has distinct needs from a macro shooter. Hence, the decision which camera is best and worth buying is often a very personal one.
G7X Mark II 09:14 E-M10 III
How about other alternatives? Do the specifications of the Canon G7 X Mark II and the Olympus E-M10 III place the cameras among the top in their class? Find out in the latest Best Travel-Zoom Camera and Best Mirrorless Interchangeable Lens Camera listings whether the two cameras rank among the cream of the crop.
In any case, while the comparison of the spec-sheets of cameras can offer a general idea of their imaging potential, it remains incomplete and does no justice, for example, to the way the G7X Mark II or the E-M10 III perform in practice. User reviews, such as those found at amazon, can sometimes inform about these issues, but such feedback is often incomplete, inconsistent, and biased.
This is where reviews by experts come in. The table below provides a synthesis of the camera assessments of some of the best known photo-gear review sites (cameralabs, dpreview, ephotozine, imaging-resource, and photographyblog). As can be seen, the professional reviewers agree in many cases on the quality of different cameras, but sometimes their assessments diverge, reinforcing the earlier point that a camera decision is often a very personal choice.
Canon G7 X Mark II + + 81/100 4.5/5 4/5 4.5/5 Feb 2016 699
Olympus E-M10 III + 80/100 4.5/5 4/5 4.5/5 Aug 2017 649
Canon G7 X Mark III + + 81/100 4/5 .. .. Jul 2019 749
Canon M100 + .. 4/5 .. 3.5/5 Aug 2017 499
Canon SX730 + .. 4/5 .. 4/5 Apr 2017 399
Canon SX420 .. .. .. .. 3/5 Jan 2016 299
Canon SX720 + .. 4/5 .. 4.5/5 Feb 2016 379
Canon G5 X + + 78/100 4.5/5 4/5 4.5/5 Oct 2015 799
Canon M3 o 75/100 4.5/5 4.5/5 4/5 Feb 2015 679
Canon SX410 o .. .. .. .. Feb 2015 279
Canon SX710 + .. 4/5 .. 3.5/5 Jan 2015 349
Canon G7 X + + 77/100 4.5/5 3.5/5 4.5/5 Sep 2014 699
Olympus E-M10 IV .. .. 4.5/5 .. 4.5/5 Aug 2020 699
Olympus E-PL9 + .. 4.5/5 4.5/5 4/5 Feb 2018 599
Olympus E-PL8 .. .. 4.5/5 .. 4/5 Sep 2016 549
Olympus E-M10 II + + 80/100 5/5 5/5 5/5 Aug 2015 649
Olympus E-M10 .. 80/100 5/5 4.5/5 5/5 Jan 2014 699
The above review scores should be interpreted with care, though. The ratings were established in reference to similarly priced cameras that were available in the market at the time of the review. Hence, a score should always be seen in the context of the camera's market launch date and its price, and comparisons of ratings among very different cameras or across long time periods have little meaning. Also, please note that some of the review sites have changed their methodology and reporting over time.
Canon G7 X Mark II:
Check Ebay offers Olympus E-M10 III:
Did this review help to inform your camera decision process? In case you would like to check on the differences and similarities of other camera models, just use the search menu below. As an alternative, you can also directly jump to any one of the listed comparisons that were previously generated by the CAM-parator tool.
Canon 5D Mark III vs Olympus E-M10 III
Canon G7 X Mark II vs Olympus E-P3
Canon G7 X Mark II vs Panasonic GH5s
Canon G7 X Mark II vs Sony HX350
Canon T4i vs Olympus E-M10 III
Olympus E-M10 III vs Panasonic ZS200
Specifications: Canon G7 X Mark II vs Olympus E-M10 III
Camera Type Fixed lens compact camera Mirrorless system camera
Camera Lens 24-100mm f/1.8-2.8 Micro Four Thirds lenses
Launch Date February 2016 August 2017
Launch Price USD 699 USD 649
Sensor Specs Canon G7 X Mark II Olympus E-M10 III
Sensor Technology BSI-CMOS CMOS
Sensor Format 1" Sensor Four Thirds Sensor
Sensor Size 13.2 x 8.8 mm 17.3 x 13.0 mm
Sensor Area 116.16 mm2 224.9 mm2
Sensor Resolution 20 Megapixels 15.9 Megapixels
Pixel Density 17.18 MP/cm2 7.08 MP/cm2
Moiré control Anti-Alias filter no AA filter
Movie Capability 1080/60p Video 4K/30p Video
ISO Setting 125 - 12,800 ISO 200 - 25,600 ISO
Image Processor DIGIC 7 TruePic VIII
Screen Specs Canon G7 X Mark II Olympus E-M10 III
Viewfinder Type no viewfinder Electronic viewfinder
LCD Resolution 1040k dots 1040k dots
LCD Attachment Tilting screen Tilting screen
Touch Input Touchscreen Touchscreen
Shooting Specs Canon G7 X Mark II Olympus E-M10 III
Focus System Contrast-detect AF Contrast-detect AF
Continuous Shooting 8 shutter flaps/s 8.6 shutter flaps/s
Time-Lapse Photography Intervalometer built-in Intervalometer built-in
Image Stabilization Lens-based stabilization In-body stabilization
UHS card support UHS-I UHS-II
Connectivity Specs Canon G7 X Mark II Olympus E-M10 III
External Flash no Hotshoe Hotshoe
Wifi Support Wifi built-in Wifi built-in
Near-Field Communication NFC built-in no NFC
Body Specs Canon G7 X Mark II Olympus E-M10 III
Battery Type NB-13L BLS-50
In-Camera Charging USB charging no USB charging
You are here: Home » CAM-parator » Canon G7 X Mark II vs Olympus E-M10 III

redpajama_set_name: RedPajamaCommonCrawl


text:
Oldham Athletic Appoint Keith Curle as New Head Coach
By: Jordan Hackett, Editor | March 8, 2021
Oldham Athletic have appointed Keith Curle as the club's new head coach following the dismissal of Harry Kewell on Sunday, March 7.
Curle has initially joined on a contract until the end of the season.
Keith Curle Appointed Oldham Athletic Head Coach
We are pleased to announce the appointment of Keith Curle as our new Head Coach. #oafc
— Oldham Athletic (@OfficialOAFC) March 8, 2021
Years of Football League Experience
The 57-year-old has coached in the Football League for many years. Most recently, he was sacked by Northampton Town after two-and-a-half years with the club. Before that, Curle spent four years at Carlisle United following a stint at Notts County. His managerial career stretches back almost 20 years.
Despite being sacked by Northampton, Curle had overseen the club's promotion from League Two via the play-offs in 2019/20.
Oldham Athletic sit 16th in the League Two table, ten points clear of the relegation zone.
Short-Term Contract No Surprise Considering Oldham's Managerial History
Curle's short-term deal with the club is befitting of the shelf-life of a manager at the club in recent years. There have been 12 different managers at the club since February 2015, when Lee Johnson left after almost two years. With a couple of them holding the post twice too.
The former Northampton boss has the opportunity to earn a longer stay with the club but with historical evidence, nothing is certain.
Straight On
Curle will be in charge for the club's game against Port Vale at Vale Park on Tuesday, March 9. Paul Butler, who has been helping out at the club in recent times, has returned as Curle's assistant. Butler has recently worked with Alan Pardew and Chris Powell at ADO Den Haag.
The club say Keith Curle will continue to work with the current first-team staff in place.
The new head coach will look to find some winning form as soon as possible, with the club on a run of just one win in their last six games.
Posted in EFL, League 1&2, NewsTagged Keith Curle, League Two, Oldham Athletic
Olympique Marseille: France's Champions League Best
Arsenal Performance at Burnley Sums up Season Under Mikel Arteta


iOS/Android image picker with support for camera, video compression, multiple images and cropping.
A React Native module that allows you to use native UI to select a photo/video from the device library or directly from the camera.
iOS / Android image picker with support for multiple images and cropping.


Do employment equity programs fit into this new theory of human rights?
Employment equity programs are about designing society, not about rights- that is only propaganda. Real rights apply on an individual basis, not a group basis (designing a society applies on a group basis). In addition, the relationship of an employee to an employing organization is in essence a contractual one with normally no basis for imputed equity in the organization.
Does the author really think that business will agree that people own what they create on the job? Ha!
It may take 20 years or 200 years but one day people en masse will conclude that a person owns what he/she creates, not only in service for himself/herself but for anyone else as well and that the basis for pay as the sale of one's time is a fiction.
What is the point of a theory of rights unless a government concurs and enforces them?
The starting point is a correct theory of human rights. The population then creates a government to protect these rights. That is, rights come before government, not the other way around. The theory of universal rights also provides a vital standard against which the conduct of any government can be judged. If it is found seriously deficient the theory provides justification and motivation for taking corrective action even to the point of rebellion.
There is no mention in the book of women's rights, worker's rights, gay rights, etc. Why not?
The theory in Human Rights, What Are They Really? expounds on the principle that all people have the same fundamental rights. Therefore, there are no rights of Group X that are more than or different from those of anyone else. The only proper context for "Group X Rights" is if some fundamental rights of Group X have been neglected in law or the enforcement of law. Possibly some or many people do not understand this distinction; therefore talk of women's rights, worker's rights, etc., tends to be confusing and counterproductive.
The UN declaration on rights has resulted in millions of people getting educated, housed, fed and their medical needs looked after, so what's wrong with that?
In response to the expectations of the people who elected them governments provided education, housing, food subsidies, medical care, etc. for those who could not afford them on their own. To pay for these things, governments took money from those who had more. Because the beneficiaries were in the majority who elected the governments this system tended to be self-perpetuating and has grown. However, true human rights maintain that a person has a right to security of his/her property, including money. Therefore, a government may not simply take what it needs from whomever it chooses, not even if it is the will of the majority. The common practice by governments of disregarding the right of the individual to security of his money, to solely control what he owns and to choose his associates, under the insufficient authority of the will of the majority is what is wrong with the UN's declared social and economic rights.
In a nation structured on true human rights there are entitlements of every citizen to actual payments from the exploitation of natural resources and from the profits of the government's enterprises. In addition, income from employment would be related to the value of whatever the worker created and therefore would be more just. Higher income to every man and woman would enable them to pay for their needs.
Why is the author's theory of rights correct and the existing doctrine on human rights incorrect?
The existing doctrine came from the Universal Declaration of Human Rights issued by the United Nations in 1948. The sources of this document were the numerous articles written in the 1920's – 1940's by idealists whose intent was to eradicate not only the patent mistreatment of people but their deprivations as well. In other words, they were trying to design an ideal society. When rights are invented to support a human purpose they are tied to that purpose and usually to the values, philosophy and possibly religious beliefs of those persons who formulated and supported that definition of rights. Other people with different values, philosophy or religion might choose different rights. Therefore, rights that originate in this manner may not be universal. Articles 22-29 of the UN declaration are called "social and economic rights" and come into this category.
Rights that are enforced on everybody must really be universal rights. To be universal they must be evident to everybody regardless of gender, race, cultural group or religion. Other subjects that fit this criterion are mathematics, the laws of science, and the balance of nature which are irrefutable by any rational person. The source of human rights is, admittedly, not so thoroughly bonded together but can still pass the test of truth apparent to any reasonable person. From this approach the theory of human rights in the subject book was developed and can properly claim to be universal and correct. Much of the prevalent doctrine on rights cannot.


The reason for this is, when you hit the ball, the face of your putter is not square to your intended line. And, alignment of the putter face is by far, the greatest influencer of direction. What one wants to achieve is accurately setting the face, and then returning it to impact at the same position.
The first step is to take your grip and square the face behind the ball. If you're right handed, observe the position of the back of your left hand. Focus on only that hand, on impact, if it looks the same way it did as address, the face is square. This is a result when your hands work as a team and one doesn't overpower the other.
The trick is to match the acceleration of both hands and the putter head. Once you master that you'll be amazed at the results.
If you're continually battling to perfect squaring your putter head we'd like to recommend our SX1 Putter. The SX1 utilises pointing rather than squaring. 'Pointing' is easier and more accurate than 'squaring' for most golfers. It assures you that you're correctly lined up which, in turn, mentally frees you to make a confident putting stroke.
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text:
\section{Introduction}
Three  dimensional  (3D)  Topological  band  Insulators (TI)  have attracted considerable  attention from the con- densed  matter and  device  physics  communities for the novel electronic surface states they support and the host of unusual responses to external fields\cite{zahid}. The basic understanding of their electronic structure, using Density Functional Theory (DFT) is a continuing quest in the literature. These studies have contributed to the growth of the field and  helped  with interpreting experiments.   In recent  years,  binary  3D TI  materials  Bi$_2$Se$_3$ and Bi$_2$Te$_3$ have  emerged  as model systems for numerous experiments which  focused  on exfoliation and  the molecular  beam  epitaxy growth of thin films and for probing the electronic structure by optical techniques\cite{zahid2} and device fabrications\cite{mit}. The theoretical works, based on density functional theory or tight-binding calculations, focused on elucidating the structure-property relations, predicting new TIs, and mapping the band structures\cite{louie}. One of the concerns for the use of binary TI materials in devices is the intrinsic {\it n}(or {\it p})-type vacancies in the bulk crystals of Bi$_2$Se$_3$ (Bi$_2$Te$_3$) which make the conduction through bulk states dominate transport experiments\cite{ong} and the hexagonal {\it warping} effect that makes the Dirac cone anisotropic, especially in the conduction band region. This anisotropic nature of the Dirac cone leads to interesting spin-textures (or spin-momentum locking) of surface states with possible applications in spintronics and quantum information processing\cite{bansil}. Recently, two promising 3D TI materials, TlBiX$_2$ (X= Se,Te) and Bi$_2$X$_2$Y (X,Y = Se,Te) have been predicted to have near perfect Dirac cones, in terms of less entanglement of bulk and surface states, and experiments have supported these predictions.\cite{ando,lin,souma,xu,chen}. Moreover, Bi-based ternary compounds offer high bulk resistivity, due to the structurally perfect nature of the crystals, so surface transport is enhanced.

\begin{figure}[ht!]
\scalebox{0.40}{\includegraphics{Fig1.ps}}
\caption{ (Color online) Schematic of the hexagonal bulk structures of representative ternary compounds (a) TlBiSe$_{2}$ and (b) bulk Bi$_{2}$Se$_{2}$Te derived from their corresponding bulk trigonal structures whose three primitive vectors are denoted by t$_1$, t$_2$ and t$_3$. The trigonal structure is part of the larger hexagonal structure shown by dashed lines. In both the compounds, the hexagonal cell contains three times the number of atoms compared to that in the trigonal structure. In (b), the five atomic layers, forming a quintuple layer are shown in the shaded square region. (c) The first Brillouin Zone of the bulk trigonal structure with four time-reversal invariant points $\Gamma$, Z, F and L are shown.}
\label{fig:Fig1}
\end{figure}

In view of these promising advances, a comprehensive theoretical study of the thin-film structures of these ternary 3D TI is necessary to help better understand these materials and to help design future experiments to verify these effects. These materials can have intrinsic size limits which can protect the metallic nature of the surface bands, the surface states can spread inside the bulk region, and atomic rearrangements in thin layers can have profound effect on the Dirac cone itself. We address these issues in this paper using a  DFT-based electronic structure method and compare our results with available experimental results as well as with the results of binary Bi-based TIs. Our studies will have implications for the understanding of topological surface states in ternary TIs and their intended applications.

Our paper is organized as follows. In Section II, we describe the bulk crystal structures of TlBiX$_2$ (X=Se,Te) and Bi$_2$X$_2$Y (X,Y=Se, Te), their conduction band (CB) and valence band (VB) structures and the computational method used for this study. In Section III we present the thin film electronic structure of these materials and discuss the role of atomic relaxations or rearragements, resulting from thin film formation from the bulk crystal, on the shape and size of the Dirac cone in the bulk, and predict critical film thicknesses required to maintain the Dirac cone  and degree of surface state extension into the bulk region which have yet to be determined experimentally for these class of materials. We compare these results with those available for binary TI compounds. Finally, in Setion IV, we present our summary  and conclusions.

\section{Computational method and bulk band structures}

This section details the computational method used, the choice of computational parameters, the bulk crystal structures and the resulting electronic band structure. The bulk crystal structures of both Tl and Bi-based ternary compounds are similar to the binary compounds Bi$_2$X$_3$(X=Se,Te). Both compounds have a trigonal structure with covalently bonded alternating cations and anion layers stacked along the crystallographic {\it z}-direction. However, there is one important difference as compared to the binary compounds: The atomic layers of these Tl-based structures are not arranged in a quintuple-like (QL) order, suggesting covalent bonding between the unit-cells, and therefore, that exfoliation techniques, used to peel binary TI flakes from the corresponding bulk crystals, cannot be used for extractng Tl-based TI thin films. The layers are arranged in the order Tl-Se(Te)-Bi-Se(Te). The trigonal unit cell contains four atoms (as opposed to five in binary Bi-based TIs) with the lattice parameter {\it a} = 0.7887 nm(0.8263 nm) and the angle between the lattice vectors spanning the lattice of $\alpha$$\sim$31.4$^o$($\sim$31.8$^o$) for TlBiSe$_2$(TlBiTe$_2$)\cite{mahanti}. The hexagonal cell, formed from the trigonal, consists of twelve atomic layers with the number of atoms tripled (Fig. 1(a)). The lattice parameters of the hexagonal cell are  {\it a}=0.4264 nm(0.4534 nm) and {\it c}=2.2478 nm(2.3512 nm) for TlBiSe$_2$(TlBiTe$_2$) and the layer sequence in this case is same as the trigonal cell. Compared to the corresponding binary compound, the Bi-based ternary compound Bi$_2$Se$_2$Te (Bi$_2$Te$_2$Se) has one of the Se (Te) layers replaced by a Te (Se) layer, and has the layers arranged in the order Te(Se)-Se(Te)-Bi-Bi-Se(Te). The QL-like layer arrangement in these compounds facilitates exfoliation-like methods which can be used to peel thin films from the bulk-crystals. The lattice parameters of the bulk trigonal cell is almost same for Bi$_2$Se$_2$Te (Bi$_2$Te$_2$Se): {\it a} = 1.0046 nm(1.0255 nm) and $\alpha$ $\sim$ 24.2$^o$ ($\sim$ 24.1$^o$)\cite{nakajima}. The hexagonal cell, built from the trigonal structure, contains fifteen atomic layers with the lattice parameters {\it a} = 0.422 nm(0.428 nm) and {\it c} = 2.92 nm(2.99 nm) for Bi$_2$Se$_2$Te (Bi$_2$Te$_2$Se) (Fig. 1(b)).

We used a DFT-based electronic structure method with projector-augmented wave basis\cite{vasp1} and a generalized gradient approximation to the exchange-correlation potential\cite{perdew} for computing the electronic properties of the bulk and thin films of both of the compounds. Spin-orbit coupling (SOC) was invoked in the calculation as implemented in the numerical method\cite{vasp2}. For the bulk structural optimizations of both the compounds, a kinetic energy cut-off of 400 eV and a non-orthogonal {\bf k}-point mesh along the reciprocal lattice vectors of 9 $\times$ 9 $\times$ 9 in the first Brillouin zone (BZ) were chosen. Since previous structural studies of bulk trigonal structures reported agreement with experimental lattice parameters\cite{expt}, we chose to relax only the internal parameters, namely the atomic positions, keeping the lattice constants fixed to experimental values. The total energy is assumed to be converged when all the components of Hellman-Feynman forces on each ion are smaller than the threshold 0.001 eV/\AA. Convergence of computed properties were carefully checked with respect to large energy cut-off, {\bf k}-point mesh and larger force threshold. For both the compounds, the computed interlayer distances are quite close to the experimental works\cite{expt}. These computed distances suggest van der Waals type of bonding between the adjacent QLs in ternary Bi-based TI but not in Tl-based TIs.  With these informations, we built the bulk hexagonal cell and the corresponding thin-films of both the compounds as detailed in the next section.

\begin{figure}[ht!]
\scalebox{0.26}{\includegraphics[angle=-90]{Fig2a.ps}}\\
\scalebox{0.26}{\includegraphics[angle=-90]{Fig2b.ps}}
\scalebox{0.26}{\includegraphics[angle=-90]{Fig2c.ps}}\\
\caption{ (Color online) Band structure of bulk trigonal structure of (a) TlBiTe$_{2}$ and (b) Bi$_2$Se$_2$Te and (c) Bi$_2$Te$_2$Se with spin-orbit coupling, shown along high symmetry dirctions in the bulk BZ. We obtained a negative indirect gap in TlBiTe$_2$ and indirect gaps in Bi-based ternary TIs. Energy states mainly from $p_z$ orbitals of Bi, Se and Te  are marked on the top of bulk bands and the procedure to obtain these surface bands from crystal wave-functions is discussed in the text.}
\label{fig:Fig2}
\end{figure}

\begin{figure}
\scalebox{0.26}{\includegraphics[angle=-90]{Fig3a.ps}}
\scalebox{0.26}{\includegraphics[angle=-90]{Fig3b.ps}}
\caption{ (Color online) Band structure of bulk Bi$_{2}$Te$_{2}$Se along high symmetry directions (a) without spin-orbit coupling, and (b) with spin-orbit coupling. Energy states formed mainly from $p_z$ orbitals of Bi and Te are marked on the top of bulk bands and band inversion processes are clearly shown.}
\label{fig:Fig3}
\end{figure}

The bulk band structures of TlBiX$_2$ (X= Se,Te), without and with SOC, agree well with other theoretical calculations\cite{mahanti, mahanti2}. However, with SOC, other calculations predict TlBiTe$_2$
to be an {\it indirect} semiconductor with the CB minimum (CBM) at the $\Gamma$ point and the VB maximum (VBM) on the line joining the {\bf L} and {\bf Z}-points. The high-symmetry points are labeled in Fig. 1(c). Recent experimental studies argue TlBiTe$_2$ to be a {\bf semimetal} with an negative energy gap of 20 meV\cite{chen}. Our results agree well with this experimental work (Fig. 2(a)). TlBiSe$_2$ has a direct gap at $\Gamma$ of 124 meV(235 meV) without(with) SOC. Figure 2(b) and (c) show the bulk band structures of Bi$_2$X$_2$Y (X,Y=(Te,Se) or,(Se,Te)) with SOC, which agree quite well with a recent DFT calculation\cite{johnson}. The CBM is at the $\Gamma$-point and the VBM is between $\bf Z$ and $\bf F$-points for both the Bi-based TIs. The computed {\it indirect} gap are 157 meV and 272 meV, for Bi$_2$Se$_2$Te and Bi$_2$Te$_2$Se, respectively. We note that the gap is {\it direct} at the $\Gamma$-point without including SOC with the gap values of 633 meV and 76 meV, for Bi$_2$Se$_2$Te and Bi$_2$Te$_2$Se, respectively.

In the literature, emergence of these topological surface states within the bulk band gap of binary 3D TIs was associated with the bulk {\it band inversion} when SOC is switched on\cite{zahid}. We tested this conjecture by plotting the specific orbital contributions from a given atom as a function of {\bf k} and band on the band structure diagrams of Figs. 2 and 3. These specific contributions are normalized with respect to the contributions from all the orbitals in both the bulk Tl- and Bi-based ternary compounds. Since the bulk CBM and VBM at $\Gamma$ consist mainly of $p_z$ orbitals\cite{mahanti2} of the Bi and Se(Te) atoms, respectively for Tl-based compounds, this state was chosen for the orbital projection studies. In Tl-based TIs, a cut-off contribution percentage is chosen which gives a reasonable picture of {\it band inversion} in these figures. If the calculated $p_z$ orbital contribution of a specific atom at a certain state is greater than a given cut-off percentage, we considered this state as mainly originating from that atom. This cut-off was set at 50$\%$ and 25$\%$ for Se(Te) and Bi atoms, respectively. A slight change in a cut-off percentage, below or above these choices, resulted in an insignificant change for the CBM and VBM bands at the $\Gamma$-point, which is region of interest to study the {\it band inversion} process. For example, the $p_z$ orbital contributions on the band structure of TlBiTe$_2$ in Fig. 2(a) remain similar near the CBM and VBM around the $\Gamma$-point with the cut-off percentage of 45$\%$ and 22.5$\%$ for Te and Bi atoms, respectively (Figures not shown). A similar {\it band inversion} effect was also seen in Bi-based TIs (Bi$_2$Te$_2$Se and Bi$_2$Se$_2$Te). This effect is shown only for one of the compound Bi$_2$Te$_2$Se (Fig. 3(a) and (b)). The other compounds show similar effects (Figures not shown). We gave an equal weight of 30$\%$ to both Bi and Te(Se) orbital contributions since the two outermost layers of Se(Te) and Bi, out of the total of five atomic layers within each QL, mainly particpate in forming the VBM and CBM.

\begin{figure}
\scalebox{0.550}{\includegraphics{Fig4.ps}}
\caption{ (Color online) Schematic diagram of thin film structures of (a) TlBiSe$_{2}$ obtained by stacking 39 layers along the {\it z}-direction. The atomic layers close to surfaces are in the order of Se-Bi-Se-Tl, on both sides of the film. (b) Two-dimensional Brillouin zone of the (111) surface of the bulk TlBiSe$_{2}$ with three time-reversal invariant points  $\bar{\Gamma}$, \={M}, and \={K}
}
\label{fig:Fig4}
\end{figure}

\section{Thin film band structures and surface states}

In this section we discuss the surface states of ternary TIs. First we discuss the interesting nature of surface states in Tl- and Bi-based TIs. We compare our results with binary Bi-based TIs, wherever possible. We choose kinetic energy cut-off of 400 eV and {\bf k}-mesh size of 9 $\times$ 9 $\times$ 1 on the surface BZ of the hexagonal supercell for computing surface band structure of both Tl- and Bi-based ternary TIs.

\subsection{Surface states in Thallium-based ternary compounds}

The thin films of Tl-based TIs are built from the bulk hexagonal structure with the atomic layers stacked along the crystallographic {\it z} direction and a net vacuum size of 3 nm above the top layer and below the bottom layer within a periodic simulation region. Recent theoretical\cite{lin} studies suggest contributions to the surface band structure from the dangling bonds arising from the surface terminations, and that these dangling states appear along with the topological surface states. Among four surface terminations, with the atomic layer ordering as Tl-Se(Te)-Bi-Se(Te), Se(Te)-Bi-Se(Te)-Tl, Bi-Se(Te)-Tl-Se(Te) and Se(Te)-Tl-Se(Te)-Bi, the one with Se(Te) beneath the Tl layer is argued to have minimal surface dangling bond densitys\cite{lin}. Therefore we chose this termination in all further thin film studies.  We note here that experiments do not observe any signature of dangling bond states in the optical spectra\cite{ando}. And, at least for this termination, we do not find any signature of the dangling bond state either, at least, within the Dirac cone region. Different thicknesses of the thin films of TlBiSe$_2$, ranging from 23 to 39 layers, corresponding to thicknesses of 4 to 7 nm and 23 to 31 layers for TlBiTe$_2$ with the maximum thickness value of 5.8 nm were considered. Figure 4(a) shows a representative supercell structure of 39 layers of TlBiSe$_2$. We consider the relaxation of atomic positions in the {\it z}-direction since it is argued that the positions of Se(Te) atoms are critical in determining the topological nature of the surface states\cite{lin}. The positions are assumed to be optimized when the {\it z}-component of the forces are smaller than the threshold value 0.015 eV/\AA.

As for the Bi-based binary compounds, Tl-based ternary compounds also show thickness dependent electronic structure. The Dirac cone is preserved in TlBiSe$_2$ with 39 atomic layers, corresponding to a thickness of 7 nm (Fig. 5(a)), and in TlBiTe$_2$  with 31 layers of a thickness 5.8 nm (Fig. 5(b)), where red circles denote surface state contributions and the solid black lines represent the bulk bands. We reproduce the interesting experimental features of TlBiSe$_2$\cite{ando} and TlBi$_2$Te\cite{chen}. The bulk VB (BVB), in TlBi$_2$Se has two maxima between $\bar{\Gamma}$ and \={M} points in the hexagonal BZ (Fig. 4(b)) and the bulk CB (BCB) has a minimum at \={M}. The Dirac cone is found to exist inside the bulk band gap, at the $\bar{\Gamma}$-point of the BZ. These features are clearly seen in our computed band structure (Fig. 5(a)). Our computed band structure of TlBiTe$_2$ shows that the Dirac point is below the BVBM (Fig. 5(b)). The BCBM is placed at $\bar{\Gamma}$ and the BVBM along the line joining $\bar{\Gamma}$ and \={M}, producing an indirect gap of 83 meV. Another BVBM emerges along the line joining $\bar{\Gamma}$ to \={K}. These features including the indirect gap size, positions of BVB, BCB and the Dirac point are consistent with the recent experimental study\cite{chen}.

For thin film thicknesses corresponding to fewer than 39 (31) atomic layers in TlBiSe$_2$ (TlBiTe$_2$), our study suggests that a band gap opens in the otherwise metallic surface states, much like those in binary Bi-based TIs\cite{zhang2}. With decreasing thicknesses, the size of the gap seems to increase indicating the increased interactions between surfaces states that exist on two opposite surfaces of the TI (Figures not shown). The gap values are summarized in Table I. There are no experimental reports, so far, on the critical film thickness necessary to preserve the metallic bands for Tl-based ternary TIs which our theoretical study predicts. It is interesting to note that the predicted induced gaps in Tl-based TIs, for the same film thickness, are larger than the binary Bi-based TIs \cite{jiwon}.

\begin{figure}
\scalebox{0.315}{\includegraphics[angle=-90]{Fig5a.ps}}
\scalebox{0.315}{\includegraphics[angle=-90]{Fig5b.ps}}
\caption{ (Color online) Band structures of (a) TlBiSe$_{2}$ film with a thickness of $\sim$7.0 nm (39 layers) and (b) TlBiTe$_{2}$ film with a different thickness of $\sim$5.8 nm (31 layers). Thinner films (23, 27, 31, 35 layers for TlBiSe$_{2}$ and 23, 27 layers for TlBiTe$_{2}$) show nonzero band gaps at $\bar{\Gamma}$ (Figures not shown). Orbital contributions from first few layers in each thicknesses are marked with red circles.}
\label{fig:Fig5}
\end{figure}

\begin{figure}
\scalebox{0.315}{\includegraphics[angle=-90]{Fig6.ps}}
\caption{ (Color online) Band structure of TlBiSe$_{2}$ film with a thickness of $\sim$5.6 nm (31 layers). A nonzero band gap exists at $\bar{\Gamma}$ due to the coupling between the top surface CB and the bottom surface VB and between the top surface VB and the bottom surface CB. No splitting is observed away from the surface state band edges.
 }
\label{fig:Fig6}
\end{figure}

\begin{figure}
\scalebox{0.345}{\includegraphics[angle=0]{Fig7a.eps}}
\scalebox{0.345}{\includegraphics[angle=0]{Fig7b.eps}}
\caption{ (Color online) Layer-projected charge density, contributed by surface states in the neighborhood of the $\bar{\Gamma}$-point for (a) TlBiSe$_{2}$ with a thickness of $\sim$ 7 nm, corresponding to 39 atomic layers and (b) TlBiTe$_2$ with a thickness of $\sim$ 5.8 nm, corresponding to 31 layers. The color labeling scheme is consistent with that in Figure 1 (a).}
\label{fig:Fig7}
\end{figure}

\begin{table}
\caption{The induced band gap at the time-reversal invariant point $\bar{\Gamma}$  $\Delta$E$_{\bar{\Gamma}}$ (in eV) for thin-films with various thicknesses.}
\begin{tabular}{ c | c | c | c | c | c  }
\hline \hline
  Number of Layers & 23 & 27 & 31 & 35 & 39 \\
\hline
  $\Delta$E$_{\bar{\Gamma}}$  & 0.059 & 0.042 & 0.023 & 0.015 & 0.000\\
  TlBiSe$_{2}$ & & & & &\\
\hline
  $\Delta$E$_{\bar{\Gamma}}$  & 0.018 & 0.009 & 0.000 & NA & NA\\
 TlBiTe$_{2}$ & & & & &\\
\hline \hline
\end{tabular}
\end{table}

\begin{figure}
\scalebox{0.355}{\includegraphics[angle=0]{Fig8a.eps}}
\scalebox{0.355}{\includegraphics[angle=0]{Fig8b.eps}}
\caption{ (Color online) Layer-projected relative charge density for thinner samples of (a) TlBiSe$_{2}$ with thickness of $\sim$ 5.6 nm corresponding to 31 layers and (b) TlBiTe$_2$ with thickness of $\sim$ 5 nm corresponding to 27 layers. The color labelling scheme is consistent with that in Figure 1(a).}
\label{fig:Fig8}
\end{figure}

\begin{figure}
\scalebox{0.455}{\includegraphics[angle=0]{Fig9.ps}}
\caption{ (Color online) Schematic diagram of (a) Bi$_{2}$Se$_{2}$Te and (b) Bi$_{2}$Te$_{2}$Se thin film structures obtained by stacking 4QLs along {\it z}-direction.}
\label{fig:Fig9}
\end{figure}

To understand the origin of the gap at the Dirac point with decreasing film thickness, we first map out the surface state contributions in the band structure from atoms within first few layers of the film, and from all the orbitals, relative to the total contributions of all orbitals from all the layers of the thin film. From the top or bottom surface of the film, 8(6) atomic layers were chosen for TlBiSe$_2$(TlBiTe$_2$). A larger number of atomic layers are used for TlBiSe$_2$ than for TlBiTe$_2$ because a larger number of atomic layers is required to preserve the metallic band structure because the surface states are less localized to the surface region in TlBiSe$_2$. These choices also helped us to choose the same cut-off percentage for both the Tl-based compounds in estimating the surface state contributions. For film thicknesses corresponding to 23, 27, 31, 35 and 39 atomic layers in TlBiSe$_2$, respectively, these cut-offs were varied from 70$\%$ - 50$\%$, in steps of 5$\%$ decrease. For TlBiTe$_2$, 23, 27 and 31 atomic layers were considered with cut-offs of 70$\%$, 65$\%$ and 60$\%$. Examples results of these orbital contributions are marked on the top of the total band structure in Fig. 5(a) and (b).

After estimating the distribution of surface states in the thin film structure, we computed the valence charge density resulting from these surface state wave-functions in both the compounds. We focused on surface states around the Dirac-point, in an energy window chosen such that same number of wave-functions are used for building the surface charge density for most relevant thicknesses considered in this study.  The wave-functions at three closely spaced {\bf k}-points including the $\Gamma$-point were chosen. The charge density is computed layer-wise. We define the {\it relative} charge density, to be the ratio of peak charge density in a particular layer to the peak charge density in all layers. This quantity is plotted in Figs. 7(a) and (b). Our studies suggest exponential decay of the charge density in the bulk region but with slower decay in TlBiSe$_2$ than in TlBiTe$_2$. In about 12-14 atomic layers, from top or bottom surfaces of the film (corresponding to 2.3 nm), the surface state contributions decay to almost zero in TlBiTe$_2$, whereas, the surface states extends up to 16-18 atomic layers ($\sim$3 nm) in TlBiSe$_2$. With decreasing film thickness, the charge density accumulates in the middle of bulk region in both compounds (Figs. 8(a) and (b)) suggesting increasing interactions of surface states by overlap of their wave-functions inducing a gap at the Dirac point. However, while a band gap is opened in the surface state band structure, away from the surface state band edges band structure is largely unaffected as seen in Fig. 6 -i.e., it does not split into two bands as one would expect from resonant coupling between opposite surface states-suggesting that the splitting is due to interband coupling between the top surface CB and the bottom surface VB and between the top surface VB and the bottom surface CB.

\begin{figure}
\scalebox{0.315}{\includegraphics[angle=-90]{Fig10a.ps}}
\scalebox{0.315}{\includegraphics[angle=-90]{Fig10b.ps}}
\caption{ (Color online) Band structures of Bi$_{2}$Se$_{2}$Te films with thickness of 3.6 nm corresponding to 4 QLs (a) without atomic relaxation and (b) with atomic relaxation. The Dirac cone is affected by relaxing the atoms.}
\label{fig:Fig10}
\end{figure}

\begin{figure}
\scalebox{0.315}{\includegraphics[angle=-90]{Fig11a.ps}}
\scalebox{0.315}{\includegraphics[angle=-90]{Fig11b.ps}}
\caption{ (Color online) Band structures of Bi$_{2}$Te$_{2}$Se films with thickness of $\sim$ 3.7 nm corrresponding to 4 QLs (a) without atomic relaxation and (b) with atomic relaxation. The Dirac cone is not affected by relaxation.}
\label{fig:Fig11}
\end{figure}

\begin{figure}
\scalebox{0.345}{\includegraphics{Fig12a.eps}}
\scalebox{0.345}{\includegraphics{Fig12b.eps}}
\scalebox{0.345}{\includegraphics{Fig12c.eps}}\\
\scalebox{0.345}{\includegraphics{Fig12d.eps}}\\
\caption{ (Color online) (a) Layer-projected charge density for Bi$_{2}$Se$_{2}$Te without the atomic relaxation, contributed by surface states in the neighborhood of the $\bar{\Gamma}$-point for thickness of $\sim$3.6 nm corresponding to 4 QLs. Charge density resulting from (b) top and (c) bottom surface wave functions and (d) Bi$_{2}$Te$_{2}$Se with the atomic relaxation for the thickness of $\sim$3.7 nm corresponding to 4 QLs. Although a charge pile up in the middle is seen in (a), the separate wavefunction contributions in (b) and (c) clearly show that surface charge density strictly vanishes after 2 QLs from both the top and bottom surfaces of the film.}
\label{fig:Fig12}
\end{figure}

\subsection{Surface states of Bismuth-based ternary compounds}

We discuss the surface state properties of Bi$_2$Se$_2$Te and Bi$_2$Te$_2$Se in this section. The building blocks of these compounds are QLs, arranged in the order -Se(Te)-Bi-Te(Se)-Bi-Se(Te)-, and stacked along the crystallographic {\it z}-direction (Figs. 9(a) and (b)). Different film thicknesses corresponding the different number of QLs were considered with a maximum of 4 QLs. The choice thickness is guided by the necessity to maintain the metallic nature of the surface bands. The computational parameters used in this study are same as those for Tl-based TIs. We first construct the thin film from experimental parameters\cite{nakajima} and then study the thin-film properties without and with relaxing the atomic positions with the force convergence criteria of 0.05 eV/\AA. The procedure for extracting surface states from crystal wave-functions and the construction of layer-wise surface charge density is same as that for Tl-based TIs discussed in the previous section.

The thin-film structure of Bi$_2$Se$_2$Te, without internal position relaxation, shows a more symmetric Dirac cone with metallic bands, as compared to the Tl-based TIs for thickness corresponding to 4 QLs (Fig. 10 (a)). The bulk band gap (of 313 meV) supports these novel states, and the Dirac point is well within this gap. Recently, a report of 3 QLs, as the minimum thickness, required to preserve the Dirac cone has appeared\cite{johnson}. We find 4 QLs to be necessary, which we also illustrate with the help of surface charge density calculations. However, in the absence of any experimental work, it is likely that the minimum thickness, carefully predicted by different theoretical methods, may fall in the range of 3QLs-4QLs. For film thicknesses below 4 QLs, a finite gap is induced at the Dirac point whose size increases with decreasing the film thickness (Figures not shown). The size of the gap values are listed in Table II. With atomic relaxation, the Dirac cone is affected and its symmetry is lost (Fig. 10(b)). The BVB lies along the line joining $\bar{\Gamma}$ and \={M} in the hexagonal BZ, and its maximum is positioned almost in line with the Dirac point. This hints at crucial role played by rearrangement of atomic positions either {\it insitu} in thin-film preparation procedure or in presence of external environments. In Bi$_2$Te$_2$Se, a significant part of surface state band structure  falls below the BVBM and the Dirac point occurs in the energy neighborhood of the $\Gamma$-point. Atomic relaxation has almost negligible effect on the overall band structure (Figs. 11 (a) and (b)) in this case. Decreasing film thickness induces a finite gap (Table II). These studies suggest that the Dirac cone remains protected in thinner layers of ternary Bi-based TIs than in binary Bi-bsed TIs or than in Tl-based TIs.

The origin of the critical thickness needed to maintain the metallic nature of the surface states can be understood by studying the layer-dependent surface charge densities. The procedure is same as that used for Tl-based TIs, except the charge density in the interstitial regions is also considered in order to locate the surface state spread in the bulk region as precisely as possible for thinner films thicknesses. For 4 QL thick Bi$_2$Se$_2$Te films, the combined charge density from the surface states of  both sides of the  film seems to be  significant in the middle of the bulk region (Fig. 12(a)).  However, we separately computed the charge  densities resulting from top and  the bottom surface  states.  As  seen  from  the plots (Figs. 12(b) and (c)), the density associated with surface states drops rapidly beyond  2 QLs, indicating negligible  interaction  between  these opposite surface states  in the 4QL film, consistent with the observed protected Dirac cone. Relaxation of atomic positions is found  to have  no significant effect.   In the 4QL films of Bi2 Te2 Se, even the combined contribution from both surfaces is small in our  studies with and  without atomic relaxation (Figs. 12(d)).

\begin{table}
\caption{The induced band gap at the time-reversal invariant point $\bar{\Gamma}$  $\Delta$E$_{\bar{\Gamma}}$ (in eV) for thin-films with various thicknesses.}
\begin{tabular}{ c | c | c | c }
\hline \hline
  Number of QLs & 2 & 3 & 4 \\
\hline
  $\Delta$E$_{\bar{\Gamma}}$  & 0.128 & 0.038 & 0.000 \\
  Bi$_{2}$Se$_{2}$Te without relaxation & & & \\
\hline
  $\Delta$E$_{\bar{\Gamma}}$  & 0.086 & 0.017 & 0.000 \\
  Bi$_{2}$Se$_{2}$Te with relaxation & & & \\
\hline
  $\Delta$E$_{\bar{\Gamma}}$  & 0.039 & 0.037 & 0.000 \\
  Bi$_{2}$Te$_{2}$Se without relaxation & & & \\
\hline
  $\Delta$E$_{\bar{\Gamma}}$  & 0.027 & 0.037 & 0.000 \\
  Bi$_{2}$Te$_{2}$Se with relaxation & & & \\
\hline \hline
\end{tabular}
\end{table}

\section {Summary and Conclusions}
We use a density functional based electronic structure method to study the thin film surface state properties of Tl and Bi-based ternary topologicial insulators. These studies predict that the Dirac cone remains protected in thinner layers of ternary Bi-based TIs than in binary Bi-based TIs or than in Tl-based TIs, which may be advantageous for certain applications. However, we also predict that in the atomically relaxed strucures, the Dirac cone of all but Bi$_2$Se$_3$ lie in or near the BVB. However, the Dirac cone of Bi$_2$Se$_2$Te remains outside of the BVB in the absence of relaxation, as might occur with dielectrics replacing the air gap. And, of course, the bonding to the dielectric could directly affect the surface states as well. Our computed results agree very well with experimental results where available, while other predictions such as the critical film thicknesses required to maintain the Dirac cone, size of the induced gaps, and the extent of the spread of surface states in the bulk region point to further needed experimental work.

\acknowledgments
The authors acknowledge financial support from the Nanoelectronics Research Initiative supported Southwest Academy of Nanoelectronics (NRI-SWAN) center. We thank the Texas advanced computing center (TACC) for computational support (TG-DMR080016N).

redpajama_set_name: RedPajamaArXiv


text:
was a fishing video game based on the Antarctic Adventure series.  It was developed by Konami and released on May 7, 2003 exclusively in Japan for  mobile phones. In mid-2004, the game was reissued and hosted by Konami for download for the then internet-based online platform  with the title . The game is no longer available for download, as the service was shut down years later to make way for the new (international) My KONAMI service.

References

See also
 Tsurikko Penta
 Antarctic Adventure

Mobile games
2003 video games
Konami games
Fishing video games
Japan-exclusive video games
Video games developed in Japan