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Patent application title: SILICON ON NOTHING PRESSURE SENSOR
Inventors: Gregory C. Brown (Chanhassen, MN, US) Gregory C. Brown (Chanhassen, MN, US) Steve Chang (Bothell, WA, US)
Assignees: HONEYWELL INTERNATIONAL INC.
IPC8 Class: AG01L906FI
USPC Class: 73721
Class name: Resistive strain gauge piezoresistive
A method of making a pressure sensing apparatus is provided herein. A plurality of trenches are etched on a first surface of a substrate. The substrate is annealed to form a diaphragm and an embedded cavity from the plurality of trenches, the diaphragm formed of a portion of the substrate wherein an exterior surface of the diaphragm is the first surface of the substrate and an interior surface of the diaphragm is a surface defining the embedded cavity. Piezoresistors are fabricated on the exterior surface of the diaphragm, the piezoresistors configured to change resistivity in response to strain resulting from deflection of the diaphragm. The substrate is mounted, including the diaphragm, in a housing such that a media can apply pressure to the diaphragm and such that the pressure can be sensed by determining a change in the resistivity of the piezoresistors.
1. A method of making a pressure sensing apparatus from a substrate comprising: etching a plurality of trenches on a first surface of a substrate; annealing the substrate to form a diaphragm and an embedded cavity from the plurality of trenches, the diaphragm formed of a portion of the substrate wherein an exterior surface of the diaphragm is the first surface of the substrate and an interior surface of the diaphragm is a surface defining the embedded cavity; fabricating piezoresistors on the exterior surface of the diaphragm, the piezoresistors configured to change resistivity in response to strain resulting from deflection of the diaphragm; and mounting the substrate including the diaphragm in a housing such that a media can apply pressure to the diaphragm and such that the pressure can be sensed by determining a change in the resistivity of the piezoresistors.
2. The method of claim 1, wherein the annealing is performed using a hydrogen ambient.
3. The method of claim 1, further comprising fabricating a pressure port extending from a second surface of the substrate to the embedded cavity.
4. The method of claim 3, wherein the port is centered relative to the embedded cavity.
5. The method of claim 1, further comprising forming die metallization interconnects, wherein the interconnects are configured to provide an electrical pathway between the piezoresistors and the housing.
6. The method of claim 1, wherein the annealing is performed at vacuum pressure such that a vacuum is formed in the embedded cavity.
7. The method of claim 1, wherein mounting the substrate includes placing an epoxy between the substrate and the housing, and curing the epoxy to mount the substrate to the housing.
8. The method of claim 1, wherein etching a plurality of trenches includes etching trenches in a circular area, such that the diaphragm and the embedded cavity have a substantially circular shape.
9. The method of claim 1, wherein etching a plurality of trenches includes etching trenches in a rectangular area, such that the diaphragm and the embedded cavity have a rectangular shape.
10. The method of claim 1, wherein etching a plurality of trenches includes etching trenches such that the embedded cavity has a depth that is approximately 1 to 1.75 times the thickness of the diaphragm.
11. A pressure sensing apparatus comprising: a monolithic substrate having a first working surface and a second surface reverse of the first working surface, the substrate defining: a diaphragm, wherein an exterior surface of the diaphragm is the first working surface of the substrate; and an embedded cavity, wherein an interior surface of the diaphragm and a bulk of the substrate define the embedded cavity, wherein the bulk defines a bottom surface of the embedded cavity, the bottom surface opposite the interior surface of the diaphragm, the bottom surface disposed such that the diaphragm contacts the bottom surface during elastic deflection to reduce further deflection; a plurality of piezoresistors on the exterior surface of the diaphragm, the plurality of piezoresistors configured to change resistivity in response to strain resulting from deflection of the diaphragm; and a housing, wherein the substrate is mounted to the housing such that a media can apply pressure to the diaphragm and such that the pressure can be sensed by determining a change in the resistivity of the piezoresistors.
12. The pressure sensing apparatus of claim 11, wherein the embedded cavity maintains a vacuum.
13. The pressure sensing apparatus of claim 11, wherein the diaphragm comprises a silicon-on-nothing structure.
14. The pressure sensing apparatus of claim 11, wherein the depth of the embedded cavity is 1 to 1.75 times the thickness of the diaphragm, wherein the travel of the diaphragm is limited if exposed to an overpressure event.
15. The pressure sensing apparatus of claim 11, wherein the plurality of piezoresistors are in the Wheatstone bridge configuration.
16. The pressure sensing apparatus of claim 11, wherein the substrate defines a port extending from the second surface of the substrate to the embedded cavity; wherein the housing defines a reference pressure volume communicating with the embedded cavity through the port.
17. The pressure sensing apparatus of claim 16, wherein the port is centered relative to the embedded cavity.
18. The pressure sensing apparatus of claim 11, wherein the bottom surface of the embedded cavity is an overpressure stop for the diaphragm that is part of the monolithic substrate.
19. The pressure sensing apparatus of claim 11, wherein the diaphragm has a generally planar geometry and is connected to the bulk at the perimeter thereof, wherein the exterior surface and the interior surface of the diaphragm are the two major surfaces of the planar geometry, and wherein the embedded cavity has a generally planar geometry matching the geometry of the diaphragm.
20. A method of making a pressure sensing apparatus from a substrate comprising: etching a plurality of trenches on a first surface of a substrate; annealing the substrate to form an embedded cavity and a diaphragm from the plurality of trenches, the diaphragm formed of a portion of the substrate wherein an exterior surface of the diaphragm is the first surface of the substrate and an interior surface of the diaphragm is a surface defining the embedded cavity; fabricating a pressure port extending from a second surface of the substrate to the embedded cavity; fabricating piezoresistors on the exterior surface of the diaphragm, the piezoresistors configured to change resistivity in response to strain resulting from deflection of the diaphragm; and mounting the substrate including the diaphragm in a housing such that a media can apply pressure to the diaphragm and such that the pressure can be sensed by determining a change in the resistivity of the piezoresistors.
[0001] There are three fundamental types of pressure measurements: absolute, gauge, and differential. Absolute pressure sensors measure pressure referenced to a vacuum. Gauge pressure sensors measure pressure referenced to local atmospheric pressure. Differential pressure sensors measure pressure relative to another pressure.
[0002] A method of making a pressure sensing apparatus is provided herein. A plurality of trenches are etched on a first surface of a substrate. The substrate is annealed to form a diaphragm and an embedded cavity from the plurality of trenches, the diaphragm formed of a portion of the substrate wherein an exterior surface of the diaphragm is the first surface of the substrate and an interior surface of the diaphragm is a surface defining the embedded cavity. Piezoresistors are fabricated on the exterior surface of the diaphragm, the piezoresistors configured to change resistivity in response to strain resulting from deflection of the diaphragm. The substrate is mounted, including the diaphragm, in a housing such that a media can apply pressure to the diaphragm and such that the pressure can be sensed by determining a change in the resistivity of the piezoresistors.
[0003] Understanding that the drawings depict only exemplary embodiments and are not therefore to be considered limiting in scope, the exemplary embodiments will be described with additional specificity and detail through the use of the accompanying drawings, in which:
[0004] FIGS. 1A-1D illustrate various stages in an example method of making a pressure sensing apparatus.
[0005] FIGS. 2A-2E illustrate various stages in an example method of making a pressure sensing apparatus.
[0006] FIG. 3 shows a cross-sectional view of an exemplary absolute pressure sensing apparatus made according to the method of FIGS. 1A-1D.
[0007] FIG. 4 shows a cross-sectional view of an exemplary pressure sensing apparatus made according to the method of FIGS. 2A-2E.
[0008] In accordance with common practice, the various described features are not drawn to scale but are drawn to emphasize specific features relevant to the exemplary embodiments.
[0009] In the following detailed description, reference is made to the accompanying drawings that form a part hereof, and in which is shown by way of illustration specific illustrative embodiments. However, it is to be understood that other embodiments may be utilized and that logical, mechanical, and electrical changes may be made. Furthermore, the method presented in the drawing figures and the specifications is not to be construed as limiting the order in which the individual steps may be performed.
[0010] Current silicon based absolute pressure sensors have a challenge of preventing leakage through the interface between the vacuum reference and the outside. Current gauge and differential pressure sensors have an overpressure stop that requires an additional wafer or other additional structure. Additionally, fabrication of these conventional sensors is limited to using thin wafers due to practical etching depth limits and requires the use of a stress isolation pedestal. There is a demand for a pressure sensor and a method of making such pressure sensor where these costs and deficiencies are reduced.
[0011] FIGS. 1A-1D illustrate various stages in an example method of making a pressure sensing apparatus 100. The method can begin with fabrication of a pressure sensing die 101. A pressure sensing die 101 includes a substrate having a diaphragm fabricated therein with piezoresistors on the diaphragm. Fabricating a pressure sensing die 101 is typically a batch process performed at the wafer level. In such a process, a plurality of pressure sensing dies 101 are fabricated simultaneously on a given wafer. The following description and illustrations refer to a single pressure sensing die 101; however, it should be understood that the fabrication process described herein is typically performed multiple times in parallel on a wafer to form a plurality of pressure sensing dies 101.
[0012] Fabrication of a pressure sensing die 101 can begin with a substrate 102 (e.g. a silicon wafer). A plurality of trenches 106 are etched in a first surface of the substrate 102.
[0013] FIG. 1A depicts the substrate 102 after a plurality of trenches is etched on a first surface 104 of the substrate 102. The plurality of trenches 106 can be etched using a variety of methods. In an example, the plurality of trenches 106 are etched using the Bosch process, reactive ion etching, or other etching methods known to the art. The plurality of trenches 106 are etched in order to form a diaphragm 108 and an embedded cavity 110 using a silicon-on-nothing process as described below. The etch depth, width, and length of the plurality of trenches 106 are selected based on the desired size of the diaphragm 108 and the embedded cavity 110. For example, deeper etches may result in a thicker diaphragm 108 and a wider cavity 110, wider etches may result in a thinner diaphragm 108, etc. Additionally, the area on the first surface of the substrate in which the plurality of trenches 106 are disposed is selected based on the desired size of the diaphragm 108 and the embedded cavity 110 within the substrate 102. For example, to fabricate a larger diaphragm, the plurality of trenches 106 are formed over a larger area. Moreover, the shape of the area in which the plurality of trenches 106 are disposed is also selected based on the desired shape of the diaphragm 108 and embedded cavity 110. In an example, the area of the plurality of trenches 106 is substantially circular. In another example, the area of the plurality of trenches 106 is rectangular. The distance between trenches can also affect the dimensions of the diaphragm 108 and the embedded cavity 110.
[0014] Once the plurality of trenches 106 are etched, the substrate 102 is annealed to form the diaphragm 108 and the embedded cavity 110 from the plurality of trenches 106. FIG. 1B depicts the substrate 102 after it is annealed. In an example, the annealing is performed at high temperature in a deoxidizing ambient. In an example, the deoxidizing ambient is a hydrogen ambient. In an example, the percentage of hydrogen content in the ambient ranges from 2% to 100%. In an example, the annealing takes place at temperatures between 800° C. and 1250° C. The annealing can be performed at high pressure, atmospheric pressure, or in a vacuum.
[0015] During the annealing process, a self-organizing migration of silicon occurs that forms the diaphragm 108 and an embedded cavity 110 in the substrate 102. In particular, the migration of the silicon causes the silicon towards the bottom (interior) of the trenches 106 to migrate up to fill the top (exterior) portions of the trenches 106 resulting in a solid silicon structure proximate the first surface 104 with a space internal to the substrate 102 below (interior to) the solid silicon structure. The solid silicon structure is the diaphragm 108 which is formed of a portion of the substrate 102 and extends from the first surface 104 to the embedded cavity 110. The space is the embedded cavity 110. Such a diaphragm 108 and embedded cavity 110 can be referred to as a silicon-on-nothing structure. The exterior surface 104 of the diaphragm 108 is the first surface 104 of the substrate 102. The interior surface 112 of the diaphragm 108 is a surface defining the embedded cavity 110.
[0016] As the substrate 102 cools after annealing, the pressure in the embedded cavity 110 reduces from its pressure at the peak temperature of annealing. By taking this into account, the pressure inside the embedded cavity 110, after it is formed, can be controlled by selecting the appropriate temperature and external pressure during the annealing process. After annealing, there may be residue hydrogen remaining in the embedded cavity 110. In an example, the residue hydrogen is removed by an additional annealing process.
[0017] Once the diaphragm 108 and embedded cavity 110 are formed, a plurality of piezoresistors 114 are fabricated on the exterior surface 104 of the diaphragm 108. FIG. 1C depicts the substrate 102 after fabrication of the piezoresistors 114. In an example, the piezoresistors 114 are fabricated by doping the exterior surface 104 of the diaphragm 108 with boron. The piezoresistors 114 are deposited at areas on the exterior surface 104 of the diaphragm 108 such that the deflection of the diaphragm 108 results in a change in the strain on the piezoresistors 114. The piezoresistors 114 are configured to change resistivity in response to the deflection of the diaphragm 108. In an example, the piezoresistors 114 are deposited in the Wheatstone bridge configuration. In an example, there are two sets of piezoresistors in the Wheatstone bridge configuration deposited on the top surface 104 of the diaphragm 108.
[0018] The substrate 102 may also undergo metallization, and FIG. 1C also depicts the substrate 102 after die metallization interconnects 116 are fabricated on the exterior surface 104 of the substrate 102. In an example, the die metallization interconnects 116 are composed of copper. The die metallization interconnects 116 provide a means of outputting a signal corresponding to a change in resistivity experienced by the piezoresistors 114.
[0019] Once the pressure sensing die 101 is fabricated, the pressure sensing die 101 can be mounted to a housing 118. FIG. 1D depicts the pressure sensing apparatus 100 after the substrate 102 is mounted to the housing 118. The substrate 102 is mounted to the housing 118 such that a media can apply pressure to the diaphragm 108 and such that the pressure applied by the media on the diaphragm 108 can be sensed by determining a change in the resistivity of the piezoresistors 114. Advantageously, forming the diaphragm 108 and the embedded cavity 110 using the above described silicon-on-nothing process enables the cavity 110 to be formed without requiring a large etch in the backside (surface reverse of surface 104) of the substrate 102, as is common for conventional pressure sensors. Since a large etch is not required, the substrate 102 for the pressure sensing die 101 can be substantially thicker than substrates used for conventional pressure sensing dies. For example, the substrate 102 can have a thickness of one-quarter inch. Since a thicker substrate can be used, in some examples, the pressure sensing die 101 does not need to be hermetically sealed to a stress isolation member (also referred to as a "pedestal"), such as Pyrex glass, as is common for conventional pressure sensors. The use of a thicker substrate can also enable the substrate 102 to be mounted to the housing 118 using a low tech bonding technique. For example, the substrate 102 can be mounted to the housing 118 by placing an epoxy between the substrate 102 and the housing 118 and curing the epoxy.
[0020] FIGS. 2A-2E illustrate various stages in an example method of making a pressure sensing apparatus 200. The method can begin with fabrication of a pressure sensing die 201. A pressure sensing die 201 includes a substrate having a diaphragm fabricated therein with piezoresistors on the diaphragm. Fabricating a pressure sensing die 201 is typically a batch process performed at the wafer level. In such a process, a plurality of pressure sensing dies 201 are fabricated simultaneously on a given wafer. The following description and illustrations refer to a single pressure sensing die 201; however, it should be understood that the fabrication process described herein is typically performed multiple times in parallel on a wafer to form a plurality of pressure sensing dies 201.
[0022] FIG. 2A depicts the substrate 202 after a plurality of trenches are etched on a first surface 204 of the substrate 202. The plurality of trenches 206 can be etched using a variety of methods. In an example, the plurality of trenches 206 are etched using the Bosch process, reactive ion etching, or other etching methods known to the art. The plurality of trenches 206 are etched in order to form a diaphragm 208 and an embedded cavity 210 using a silicon-on-nothing process as described below. The etch depth, width, and length of the plurality of trenches 206 are selected based on the desired size of the diaphragm 208 and the embedded cavity 210. For example, deeper etches may result in a thicker diaphragm 208 and a wider embedded cavity 210, wider etches may result in a thinner diaphragm 208, etc. Additionally, the area on the first surface of the substrate in which the plurality of trenches 206 are disposed is selected based on the size of the diaphragm 208 and the embedded cavity 210 within the substrate 202. For example, to fabricate a larger diaphragm 208, the plurality of trenches 206 are formed over a larger area. Moreover, the shape of the area in which the plurality of trenches 206 are disposed is also selected based on the desired shape of the diaphragm 208 and the embedded cavity 210. In an example, the area of the plurality of trenches 206 is substantially circular. In another example, the area of the plurality of trenches 206 is rectangular. The distance between trenches also affects the dimensions of the diaphragm 208 and the embedded cavity 210.
[0023] Once the plurality of trenches 206 are etched, the substrate is annealed to form the diaphragm 208 and the embedded cavity 210 from the plurality of trenches 206. FIG. 2B depicts the substrate 202 after it is annealed. In an example, the annealing is performed at high temperature in a deoxidizing ambient. In an example, the deoxidizing ambient is a hydrogen ambient. In an example, the percentage of hydrogen content in the ambient ranges from 2% to 100%. In an example, the annealing takes place at temperatures between 800° C. and 1250° C. The annealing can be performed at high pressure, atmospheric pressure, or in a vacuum.
[0024] During the annealing process, a self-organizing migration of silicon occurs that forms the diaphragm 208 and an embedded cavity 210 in the substrate 202. In particular, the migration of the silicon causes the silicon towards the bottom (interior) of the trenches 206 to migrate up to fill the top (exterior) portions of the trenches 206 resulting in a solid silicon structure proximate the first surface 204 with a space internal to the substrate 202 below (interior to) the solid silicon structure. The solid silicon structure is the diaphragm 208 which is formed of a portion of the substrate 202 and extends from the first surface 204 to the embedded cavity 210. The space is the embedded cavity 210. Such a diaphragm 208 and embedded cavity 210 can be referred to as a silicon-on-nothing structure. The exterior surface 204 of the diaphragm 208 is the first surface 204 of the substrate 202. The interior surface of the diaphragm 212 is a surface defining the embedded cavity 210.
[0026] After the diaphragm 208 and the embedded cavity 210 are formed, a pressure port 214 is etched in the backside (surface reverse of surface 204) of the substrate 202. FIG. 2C depicts the substrate 202 after the pressure port 214 is etched in the substrate 202. The pressure port 214 is etched from the backside of the substrate 202 to the embedded cavity 210. The pressure port 214 enables fluid communication between the embedded cavity 210 and the external environment proximate the backside of the substrate 202. Etching the pressure port 214 comprises etching a through-hole from the backside of the substrate to the embedded cavity 210. Etching is stopped before the through-hole extends through the diaphragm 208 to maintain the integrity of the diaphragm. The through-hole has a diameter that is substantially smaller than the diameter/width of the embedded cavity 210. In an example, the through-hole has a diameter that is one-tenth the diameter of the embedded cavity 210. In an example, etching includes etching a plurality of pressure ports 214 accessing the embedded cavity 210 in different locations. The pressure port 214 can be etched using a variety of methods. In an example, the pressure port 214 is etched using the Bosch process, reactive ion etching, or other etching methods known to the art. The pressure port 214 is etched for a gauge or differential pressure sensing apparatus, not an absolute pressure sensing apparatus. In an example, the pressure port 214 can be positioned to expose any part of the embedded cavity 210 to another pressure. In an example, the pressure port is centered with reference to the embedded cavity 210.
[0027] Once the pressure port 214 is formed, a plurality of piezoresistors 216 are fabricated on the exterior surface 204 of the diaphragm 208. FIG. 2D depicts the substrate 202 after fabrication of the plurality of piezoresistors 216. In an example, the piezoresistors 216 are fabricated by doping the exterior surface 204 of the diaphragm 208 with boron. The piezoresistors 216 are deposited at areas on the exterior surface 204 of the diaphragm 208 such that the deflection of the diaphragm 208 results in a change in the strain on the piezoresistors 216. The piezoresistors 216 are configured to change resistivity in response to the deflection of the diaphragm 208. In an example, the piezoresistors 216 are deposited in the Wheatstone bridge configuration. In an example, there are two sets of piezoresistors 216 in the Wheatstone bridge configuration deposited on the top surface 204 of the diaphragm 208.
[0028] The substrate 202 may also undergo metallization, and FIG. 2D also depicts the substrate 202 after die metallization interconnects 218 are fabricated on the top surface 204 of the substrate 202. In an example, the die metallization interconnects 218 are composed of copper. The die metallization interconnects provide a means of outputting a signal corresponding to a change in resistivity experienced by the piezoresistors 114. The pressure can then be calculated from this signal.
[0029] Once the pressure sensing die 201 is fabricated, the pressure sensing die 201 can be mounted to a housing 220. FIG. 2E depicts the pressure sensing apparatus 200 after the substrate 202 is mounted to the housing 220. The substrate 202 is mounted to the housing 220 such that a media can apply pressure to the diaphragm 208 and such that the pressure applied by the media on the diaphragm 208 can be sensed by determining a change in the resistivity of the piezoresistors 216. Advantageously, forming the diaphragm 208 and the embedded cavity 210 using the above described silicon-on-nothing process enables the embedded cavity 210 to be formed without requiring a large etch in the backside of the substrate 202 as is common for conventional pressure sensors. Since a large etch is not required, the substrate 202 for the pressure sensing die 201 can be substantially thicker than substrates used for conventional pressure sensing dies. For example, the substrate 202 can have a thickness of one-quarter inch. Since a thicker substrate can be used, in some examples, the pressure sensing die 201 does not need to be hermetically sealed to a stress isolation member (also referred to as a "pedestal"), such as Pyrex glass, as is common for conventional pressure sensors. The use of a thicker substrate can also enable the substrate 202 to be mounted to the housing 220 using a low tech bonding technique. For example, the substrate 202 can be mounted to the housing 220 by placing an epoxy between the substrate 202 and the housing 220 and curing the epoxy.
[0030] FIG. 3 is a cross-sectional view of an exemplary absolute pressure sensing die 300 made according to the method of FIGS. 1A-1C. The absolute pressure sensing die 300 includes a monolithic substrate 302. The monolithic substrate 302 has a first working surface 304 and a second surface 306 that is reverse of the first working surface 304. In an example, the monolithic substrate 302 is composed of silicon. In an example, the monolithic substrate 302 is one-quarter inch thick. The use of this larger thickness monolithic substrate 302 is made possible because of the reduced etching when using the method of FIGS. 1A-1C described above as compared to conventional pressure sensing die.
[0031] The absolute pressure sensing die 300 includes a diaphragm 308 above an embedded cavity 310. The diaphragm 308 has an exterior surface 304 and an interior surface 312. The exterior surface 304 of the diaphragm 308 is the first working surface 304 of the monolithic substrate 302. The diaphragm 308 is part of the monolithic substrate 302. In an example, the diaphragm 308 is composed of silicon. In an example, the diaphragm has a generally planar geometry. The dimensions of the diaphragm 308 are determined by the trenches that are etched as shown in FIG. 1A. In an example, the diaphragm 308 is approximately 0.1 um to several um thick. In another example, the diaphragm 308 is 0.001 inches thick. As viewed from the first working surface 304, the diaphragm 308 can have any appropriate shape, such as a circle or a rectangle. In an example, the diaphragm 308 is substantially circular and has a diameter between 0.05 inches and the diameter of the die. In an example, the diaphragm 308 is rectangular and has dimensions ranging between 0.03 inches×0.045 inches and the maximum that would fit on the die.
[0032] The absolute pressure sensing die 300 includes an embedded cavity 310 within the monolithic substrate 302. The embedded cavity 310 is defined by the interior surface 312 of the diaphragm 308 and a bulk 314 of the monolithic substrate 302. The embedded cavity 310 has a top surface 312 and a bottom surface 316. The top surface of the embedded cavity 310 is the interior surface 312 of the diaphragm 308. The bottom surface 316 of the embedded cavity 310 is a surface of the bulk 314 of the monolithic substrate 302. In an example, the embedded cavity 310 has a generally planar geometry. In an example, the embedded cavity 310 is substantially circular and is defined by the dimensions of diameter and depth. In another example, the embedded cavity 310 is rectangular and is defined by the dimensions of length, width, and depth. Depth is the distance between the top surface 312 and bottom surface 316 of the embedded cavity 310. These dimensions will be determined by the properties of the trenches 106 that are etched to form the embedded cavity 310 as described above with reference to FIG. 1A. In an example, the depth of the embedded cavity 310 is approximately 1 to 1.75 times the thickness of the diaphragm 308. In an example, the diameter of the embedded cavity 310 is at least 1.5 times the depth of the embedded cavity 310.
[0033] The embedded cavity 310 operates as an integral vacuum reference for the absolute pressure sensing die 300. The diaphragm 308 is part of the substrate 302, so no bonding is required to seal the embedded cavity 310 and prevent leakage through the diaphragm 308.
[0034] In operation, the diaphragm 308 of the absolute pressure sensing die 300 may experience an overpressure event. An overpressure event is when a pressure is applied that is over and above the normal operating pressure. Without an overpressure stop, the diaphragm 308 of the absolute pressure sensing die 300 could break during an overpressure event. However, the bottom surface 316 of the embedded cavity 310 of the pressure sensing apparatus 300 operates as an integral overpressure stop. Specifically, the bottom surface 316 of the embedded cavity 310 will prevent the diaphragm 308 from deflecting too far during an overpressure event. The depth of the embedded cavity 310 is chosen to be an amount that will allow the diaphragm 308 to deflect in the desired operating pressure range, but no farther. In an example the depth of the embedded cavity 310 is selected such that diaphragm 308 contacts the bottom surface 316 at about three times the normal operating pressure.
[0035] The absolute pressure sensing die 300 includes a plurality of piezoresistors 318 on the top surface 304 of the diaphragm 308. In an example, the piezoresistors 318 are disposed on the top surface 304 of the diaphragm 308 in a Wheatstone bridge configuration. When the diaphragm 308 deflects, the piezoresistors 318 experience a change in resistivity. This change in resistivity is detected and the external pressure on the absolute pressure sensing die 300 can be calculated.
[0036] The absolute pressure sensing die 300 includes die metallization interconnects 320. In an example, the die metallization interconnects 320 are composed of copper. The die metallization interconnects 320 provide a means of outputting a signal corresponding to a change in resistivity experienced by the piezoresistors 318.
[0037] FIG. 4 is a cross-sectional view of an exemplary pressure sensing die 400 made according to the method of FIGS. 2A-2D. The pressure sensing die 400 includes a monolithic substrate 402. The monolithic substrate has a first working surface 404 and a second surface 406 (also referred to herein as the "backside") that is reverse of the first working surface 404. In an example, the monolithic substrate 402 is composed of silicon. In an example, the monolithic substrate 402 is one-quarter inch thick. The use of this larger thickness monolithic substrate 402 is made possible because of the reduced etching when using the method of FIGS. 2A-2D described above as compared to conventional pressure sensing die.
[0038] The pressure sensing die 400 includes a diaphragm 408 above an embedded cavity 410. The diaphragm 408 has an exterior surface 404 and an interior surface 412. The exterior surface 404 of the diaphragm 408 is the first working surface 404 of the monolithic substrate 402. The diaphragm 408 is part of the monolithic substrate 402. In an example, the diaphragm 408 is composed of silicon. In an example, the diaphragm 408 has a generally planar geometry. The dimensions of the diaphragm 408 are determined by the trenches that are etched as shown in FIG. 2A. In an example, the diaphragm 408 is approximately 0.1 um to several um thick. In another example, the diaphragm is 0.001 inches thick. As viewed from the top of the working surface 404, the diaphragm 408 can have any appropriate shape, such as a circle or a rectangle. In an example, the diaphragm 408 is substantially circular and has a diameter between 0.05 inches and the diameter of the die. In an example, the diaphragm 408 is rectangular and has dimensions ranging between 0.03 inches×0.045 inches and the maximum that would fit on the die.
[0039] The pressure sensing die 400 includes an embedded cavity 410 within the monolithic substrate 402. The embedded cavity 410 is defined by the interior surface 412 of the diaphragm 408 and a bulk 414 of the monolithic substrate 402. The embedded cavity 410 has a top surface 412 and a bottom surface 416. The top surface of the embedded cavity 410 is the interior surface 412 of the diaphragm 404. The bottom surface 416 of the embedded cavity 410 is a surface of the bulk 414 of the monolithic substrate 402. In an example, the embedded cavity 410 has a generally planar geometry. The embedded cavity 410 is substantially circular and is defined by the dimensions of diameter and depth. In another example, the embedded cavity 410 is rectangular and is defined by the dimensions of length, width, and depth. Depth is the distance between the top surface 412 and bottom surface 416 of the embedded cavity 410. These dimensions will be determined by the properties of the trenches 206 that are etched to form the embedded cavity 410 as described above with reference to FIG. 2A. In an example, the depth of the embedded cavity 410 is approximately 1 to 1.75 times the thickness of the diaphragm 408. In an example, the diameter of the embedded cavity 410 is at least 1.5 times the depth of the embedded cavity 410.
[0040] The pressure sensing die 400 includes a pressure port 418 from the embedded cavity 410 to the second surface 406 of the monolithic substrate 402. The pressure port 418 extends through the bulk 414 of the substrate 402 from the second surface 406 to the embedded cavity 410. The pressure port 418 enables fluid communication between the embedded cavity 410 and the external environment proximate the second surface 406 of the substrate 402. The pressure port 418 has a diameter that is substantially smaller than the diameter/width of the embedded cavity 410, where the diameter of the pressure port 418 is the distance across the pressure port 418 from the bulk 414 on one side to the bulk 414 on the opposite side. In an example, the through-hole has a diameter that is one-tenth the diameter of the embedded cavity 410. The pressure port 418 can be fabricated using a variety of methods known in the art. In an example, the pressure port 418 is centered with reference to the embedded cavity 410. In an example where the pressure sensing die 400 is used to measure gauge pressure, the pressure port 418 is exposed to atmospheric pressure. In an example where the pressure sensing die 400 is used to measure differential pressure, the pressure port 418 is exposed to a reference chamber having a defined pressure therein. Although a single pressure port 418 is shown in FIG. 4, the pressure sensing die 400 can include more than one pressure port 418 each pressure port 418 accessing the embedded cavity 410 in a different location.
[0041] In operation, the diaphragm 408 of the pressure sensing die 400 may experience an overpressure event. An overpressure event is when a pressure is applied that is over and above the normal operating pressure. Without an overpressure stop, the diaphragm 408 of the pressure sensing die 400 could break during an overpressure event. However, the bottom surface 416 of the embedded cavity 410 of the pressure sensing die 400 operates as an integral overpressure stop. Specifically, the bottom surface 416 of the embedded cavity 410 will prevent the diaphragm 408 from deflecting too far during an overpressure event. The depth of the embedded cavity 410 is chosen to be an amount that will allow the diaphragm 408 to deflect in the desired operating pressure range, but no farther. In an example, the depth of the embedded cavity 410 is selected such that the diaphragm 408 contacts the bottom surface 416 at about three times the normal operating pressure.
[0042] The pressure sensing die 400 includes a plurality of piezoresistors 420 on the top surface 404 of the diaphragm 408. In an example, the piezoresistors 420 are disposed on the top surface 404 of the diaphragm 408 in a Wheatstone bridge configuration. When the diaphragm 408 deflects, the piezoresistors 420 experience a change in resistivity. This change in resistivity is proportional to the pressure difference and the external pressure on the pressure sensing die 400 can be calculated.
[0043] The pressure sensing die 400 includes die metallization interconnects 422. In an example, the die metallization interconnects are composed of copper. The die metallization interconnects 422 also provide a means of outputting a change in resistivity experienced by the piezoresistors 420.
[0044] Although specific embodiments have been illustrated and described herein, it will be appreciated by those of skill in the art that any arrangement, which is calculated to achieve the same purpose, may be substituted for the specific embodiments shown. Therefore, it is manifestly intended that this invention be limited only by the claims and equivalents thereof.
Example Embodiments
[0045] Example 1 includes a method of making a pressure sensing apparatus from a substrate comprising: etching a plurality of trenches on a first surface of a substrate; annealing the substrate to form a diaphragm and an embedded cavity from the plurality of trenches, the diaphragm formed of a portion of the substrate wherein an exterior surface of the diaphragm is the first surface of the substrate and an interior surface of the diaphragm is a surface defining the embedded cavity; fabricating piezoresistors on the exterior surface of the diaphragm, the piezoresistors configured to change resistivity in response to strain resulting from deflection of the diaphragm; and mounting the substrate including the diaphragm in a housing such that a media can apply pressure to the diaphragm and such that the pressure can be sensed by determining a change in the resistivity of the piezoresistors.
[0046] Example 2 includes the method of Example 1, wherein the annealing is performed using a hydrogen ambient.
[0047] Example 3 includes the method of any of Examples 1-2, further comprising fabricating a pressure port extending from a second surface of the substrate to the embedded cavity.
[0048] Example 4 includes the method of Example 3, wherein the port is centered relative to the embedded cavity.
[0049] Example 5 includes the method of any of Examples 1-4, further comprising forming die metallization interconnects, wherein the interconnects are configured to provide an electrical pathway between the piezoresistors and the housing.
[0050] Example 6 includes the method of any of Examples 1-5, wherein the annealing is performed at vacuum pressure such that a vacuum is formed in the embedded cavity.
[0051] Example 7 includes the method of any of Examples 1-6, wherein mounting the substrate includes placing an epoxy between the substrate and the housing, and curing the epoxy to mount the substrate to the housing.
[0052] Example 8 includes the method of any of Examples 1-7, wherein etching a plurality of trenches includes etching trenches in a circular area, such that the diaphragm and the embedded cavity have a substantially circular shape.
[0053] Example 9 includes the method of any of Examples 1-8, wherein etching a plurality of trenches includes etching trenches in a rectangular area, such that the diaphragm and the embedded cavity have a rectangular shape.
[0054] Example 10 includes the method of any of Examples 1-9, wherein etching a plurality of trenches includes etching trenches such that the embedded cavity has a depth that is approximately 1 to 1.75 times the thickness of the diaphragm.
[0055] Example 11 includes a pressure sensing apparatus comprising: a monolithic substrate having a first working surface and a second surface reverse of the first working surface, the substrate defining: a diaphragm, wherein an exterior surface of the diaphragm is the first working surface of the substrate; and an embedded cavity, wherein an interior surface of the diaphragm and a bulk of the substrate define the embedded cavity, wherein the bulk defines a bottom surface of the embedded cavity, the bottom surface opposite the interior surface of the diaphragm, the bottom surface disposed such that the diaphragm contacts the bottom surface during elastic deflection to reduce further deflection; a plurality of piezoresistors on the exterior surface of the diaphragm, the plurality of piezoresistors configured to change resistivity in response to strain resulting from deflection of the diaphragm; and a housing, wherein the substrate is mounted to the housing such that a media can apply pressure to the diaphragm and such that the pressure can be sensed by determining a change in the resistivity of the piezoresistors.
[0056] Example 12 includes the pressure sensing apparatus of Example 11, wherein the embedded cavity maintains a vacuum.
[0057] Example 13 includes the pressure sensing apparatus of any of Examples 11-12, wherein the diaphragm comprises a silicon-on-nothing structure.
[0058] Example 14 includes the pressure sensing apparatus of any of Examples 11-13, wherein the depth of the embedded cavity is 1 to 1.75 times the thickness of the diaphragm, wherein the travel of the diaphragm is limited if exposed to an overpressure event.
[0059] Example 15 includes the pressure sensing apparatus of any of Examples 11-14, wherein the plurality of piezoresistors are in the Wheatstone bridge configuration.
[0060] Example 16 includes the pressure sensing apparatus of any of Examples 11-15, wherein the substrate defines a port extending from the second surface of the substrate to the embedded cavity; wherein the housing defines a reference pressure volume communicating with the embedded cavity through the port.
[0061] Example 17 includes the pressure sensing apparatus of Example 16, wherein the port is centered relative to the embedded cavity.
[0062] Example 18 includes the pressure sensing apparatus of any of Examples 11-17, wherein the bottom surface of the embedded cavity is an overpressure stop for the diaphragm that is part of the monolithic substrate.
[0063] Example 19 includes the pressure sensing apparatus of any of Examples 11-18, wherein the diaphragm has a generally planar geometry and is connected to the bulk at the perimeter thereof, wherein the exterior surface and the interior surface of the diaphragm are the two major surfaces of the planar geometry, and wherein the embedded cavity has a generally planar geometry matching the geometry of the diaphragm.
[0064] Example 20 includes a method of making a pressure sensing apparatus from a substrate comprising: etching a plurality of trenches on a first surface of a substrate; annealing the substrate to form an embedded cavity and a diaphragm from the plurality of trenches, the diaphragm formed of a portion of the substrate wherein an exterior surface of the diaphragm is the first surface of the substrate and an interior surface of the diaphragm is a surface defining the embedded cavity; fabricating a pressure port extending from a second surface of the substrate to the embedded cavity; fabricating piezoresistors on the exterior surface of the diaphragm, the piezoresistors configured to change resistivity in response to strain resulting from deflection of the diaphragm; and mounting the substrate including the diaphragm in a housing such that a media can apply pressure to the diaphragm and such that the pressure can be sensed by determining a change in the resistivity of the piezoresistors.
Patent applications by Gregory C. Brown, Chanhassen, MN US
Patent applications by Steve Chang, Bothell, WA US
Patent applications by HONEYWELL INTERNATIONAL INC.
Patent applications in class Piezoresistive
Patent applications in all subclasses Piezoresistive
2015-11-26 Control device for a vehicle with a housing having a pressure sensor
2015-11-26 Magnetic mount for tire pressure sensor
2015-10-29 Semiconductor pressure sensor
2015-11-12 Multi-range on-site full-automatic pressure calibration instrument
2015-12-03 Gear transmission and usage measuring device for measuring usage of gear transmission
2016-03-24 Differential pressure sensor assembly
2016-02-11 Sensor co-located with an electronic circuit
2016-01-28 Pressure sensor
2016-01-14 Ultra-miniature multi-hole flow angle probes
2016-04-28 Systems and methods for mounting the printed wiring assembly to the header assembly of a pressure sensor
2015-11-19 Mass-loaded coriolis vibratory gyroscope
2015-10-29 Integrated reference vacuum pressure sensor with atomic layer deposition coated input port
2014-12-25 Cooling device including etched lateral microchannels
2014-12-25 Integrated soi pressure sensor having silicon stress isolation member
Top Inventors for class "Measuring and testing"
1 Anthony D. Kurtz
2 Alfred Rieder
3 Johannes Classen
4 Manus P. Henry
5 Heewon Jeong


JOLEON LESCOTT swept aside the controversy over the amount of added time by admitting Manchester City had been guilty of defensive naivety at Old Trafford.
For all the positives City took from equalising three times in their 4-3 defeat, Mark Hughes' team were left reflecting on errors at the back. Shaun Wright-Phillips was caught napping from a throw-in in the build-up for United's first; the defenders were twice outjumped as Darren Fletcher scored in the second half, and Micah Richards was caught horribly out of position for Michael Owen's controversial winner.
After keeping clean sheets in their first four games of the season, including the Carling Cup win at Crystal Palace, City have leaked six goals in their last two games to Arsenal and United. And Lescott admits it is not good enough for a team with ambitions to challenge for a top-four place.
"There are no excuses," he said. "We have made mistakes. We are professionals. We have to look at ourselves both individually and collectively and realise it wasn't good enough.
"We started the season looking nice and solid with four clean sheets in a row and have now conceded six goals in two games. We have to correct that.
"Maybe we showed a bit of naivety towards the end. We are not a side to sit back – we always want to win a game but sometimes you have to realise you can't.
Despite City's devastation at Michael Owen's late, late goal, Lescott said they could draw some positives from a thrilling game. "United fans did not go home thinking it was an easy match," he said. "We put them under a lot of pressure and if we had got the draw it would have been fully deserved.
City midfielder Gareth Barry admitted that scoring a goal on his Manchester derby debut meant nothing because "we didn't get any points".
He added: "It always hurts to lose to a last-minute goal, especially as it looked like we would get a well-deserved point. Not many teams are going to go to Old Trafford and score three.
"After beating Arsenal, we've made another statement and deserve a lot of credit for that. Carlos Tevez coming through [after his knee injury] was another positive for us. He worked his socks off.
"It was a great atmosphere – the fans made the game. It was a great spectacle but sadly for us we got no reward.


Several college seniors from universities within the tri state area have spent a semester at the MHA. Having considered the programs conducted by the local mental health providers within our area, these students have chosen to mentor under the professional staff of the MHA. We are very proud and very fortunate.
It is appropriate that these future leaders recognize the value of examining our numerous groups and educational activities as a component of their education.
While they experience our programs personally and grow professionally, they also contribute substantially to the goal of regaining mental health for all consumers. They bring with them, fresh ideas from the latest academic teachings in our field. This opportunity to combine the newest teachings with real world exposure benefits the intern, this institution and our programs.
We have asked our recent interns to express their impression of their experience with us.
We have posted a few video presentations by some of the interns on our Facebook page. Have a look!


Depending on the State or Territory in which you live, you may also need to be wary of ex-partners making a claim for financial provision from your estate, even if you have changed your Will and had a property settlement. In general terms, in NSW, Tasmania, Western Australia and the Northern Territory your former de facto could make a claim on your estate if he or she was being maintained by you at the time of your death. Similar provisions apply in Queensland if your ex-partner is also the parent of your minor child. In Victoria, the entitlement to make such a claim is dependant on you and your ex-de facto not having finalised a property settlement by the time of your death.


text:
Explanations differ about what caused disastrous flood in Tbilisi
(Facebook.)
TBILISI, DFWatch–The clean-up effort continues after Sunday's flood, which left at least 17 dead, as attention turns to what might have caused such a disaster. A handful of reasons have been given, which all may be grouped according to political affiliation.
Some people blame the flood on a construction project during the presidency of Mikheil Saakashvili, while others think the flood was unrelated to this.
The Environment Protection Ministry published a video which shows how the flood wave developed. Ministry representatives claim this is what happened early Sunday morning.
The computer generated clip suggests that the disaster started with a landslide.
On the right bank of the River Vera, close to the village Akhaldaba, on the Tskneti-Betania road, there was rock-fall type landslide. About a million cubic meters of solid soil mass fell down, which created a flow of debris which temporarily blocked the River Vere Valley.
This was preceded by torrential rain and a hailstorm.
Breakthrough of the water congestion resulted increase of the level of Vere, mudflow pass and flooding.
Contributing factors
While describing the reasons of the flood, experts talk of two types of issues – natural factors and urban and infrastructure factors.
They agree that the major factor was strong rain that lasted for several hours, but meteorologists also say that in the past there has been even more rainfall, without such an amount of damage.
Svetlana Nioradze, a weather forecaster and head of the Meteorology Department, lists specific data: On June 14, there was 49 millimeters rainfall for three hours, but on June 4 there was also strong rain, 48 millimeters in only one hour. In 2012, there was on one occasion 93 millimeters of precipitation in three hours, 78 millimeters rain in three hours in 2011. And further, in 1972, there was measured 130 millimeters of precipitation.
But none of these prior incidents led to such grave results, which is why meteorologists explain that without contributing factors, the flood wouldn't have been as devastating.
Landslide is a second factor which played a great role in this flood.
"The large volume of the landslide complicated things, as it blocked the Vere Valley. The river was blocked, and in fact, the dramatic results we witnessed was not because of the heavy rain but the enormous mudflow caused by the landslide," Rezo Getiashvili, from Caucasus Environmental NGO Network says.
(DF Watch.)
The role of infrastructure
Those are considered to be the reasons of the flood, but the discussion now mostly concerns the events that followed. Some specialists believe that the impact of the flood was amplified by infrastructure in this area. They blame the former government of this as it was constructed by the initiative of Mikheil Saakashvili. Others disagree, and in some cases claim that if not for the highway the results would have been even more serious.
There is a range of opinions among geologists and architects.
Nino Chkhobadze, head of the Georgian Green Movement, tells DF Watch that when the estacade was constructed no one evaluated influence on environment and construction was launched before the research.
"When they were constructing the road, we claimed and still repeat now that it hadn't been properly planned. The risk had to be modeled, but they didn't do it. We were in a hurry to finish the construction and society was unable to take our demands into consideration," she says.
She explains that the pipes weren't able to deal with the volume of water and June 13 was proof of this.
"We got this tragedy as a result."
After analysing pictures shot from a helicopter, Rezo Getiashvili says that it seems that the river wasn't blocked by a landslide, because in those spots where the landslide was there is a green cover, which indicates that if the landslide slid down to the bottom and filled the river, the water would have washed away the trees, grass and bushes.
"So we are dealing with ponding, which means that a large amount of water appeared and the volume of water could not pass properly, while the bandwidth of water was reduced since 2011. Of course, the landslide had a negative influence on this process, but this tragedy can be related more to a hydrological event. The infrastructure wasn't ready to pass a great amount of water flow with a mudflow," Getiashvili says.
Some architects also blame the tragedy on infrastructure. Architect Giga Batiashvili is among them.
"Of course, none of it was done properly and this caused the tragedy. A high-speed highway of course requires a linear path, but it required changing the river bed and directing it into tunnels. It required cutting the rocks and washing erosion sections. The river responded. The water and of course a mountain river always fights against impedance. The goal was incorrect, implemented and solved incorrectly, against nature, and we got an appropriate answer. Nature didn't forgive."
Art critic Marina Khatiashvili shares his opinion. She tells DF Watch that the Vere motorway project was rushed through.
"It was of low quality, only planned for PR implemented for different expenditure and we got the result of it."
She remembers the opinion of architect Koka Amirejibi, who recently passed away, and who had been strongly against this project due to the vast majority of reasons architects are speaking about today.
Irakli Maskharashvili, an influential Tbilisi architect, explains to us that the highway shouldn't have passed through River Vere.
"Secondly, it is dangerous directing a mountain river into artificial tunnels. They didn't take this into account and we are dealing with [the consequences of] this now."
Gia Abuladze adds buildings as another factor, saying that it is not right to construct houses in this valley, especially not makeshift buildings, because they easily collapse during a disaster and further blocks the river's path. Moreover, when Vere was directed into pipes, it was obvious that they would not be able to withstand an event like this.
However architect Tamaz Shilakadze claims that the highway on the contrary reduced the extent of damage, which might have been much greater than what we see today.
"During the construction of the road, the water flow wasn't reduced, but on the contrary, it was cleaned. The area was blocked and it was cleaned. Those pipes were letting through much more water than this. The problem was the landslide, which dammed the water."
The government's position
We can list at least three reasons from the experts causing the disaster: a landslide caused damming of the water in the valley, the water broke out and washed away everything, the flooding of Vere without the landslide factor and an improperly planned infrastructure project.
It is still too early to say which of the reasons was the real cause, that will require a lot more research.
Monday evening, Prime Minister Irakli Garibashvili said during a special meeting of the disaster team that he is ordering the relevant bodies to create a working group and start studying what caused the disaster.
"I don't exclude that the Prosecutor's Office may also get involved. This reaction to such incidents is normal in every civilized country," he said.
It is likely that they may use this issue against former government officials and particularly against former Mayor Gigi Ugulava.
"No matter who will be punished, it is not excluded. We don't think of the responsibility of specific people. It is necessary to determine the real reasons to avoid what happened in the future. We don't have a guarantee that it is not repeated. We have an obligation to study what happened and prevent it," he said.
By Rusiko Machaidze| 2015-06-17T11:43:39+00:00	June 16th, 2015|Categories: Environment, News|Tags: June 14 flood Tbilisi|0 Comments

redpajama_set_name: RedPajamaCommonCrawl


The Ministry of Agriculture and Rural Development will finance research in the field of medical cannabis, in what it says is a pioneering step that will allow researchers to do basic and applied research to develop the tools and infrastructure for a new generation of medical cannabis products.
In collaboration with the Health Ministry, the Agriculture Ministry has allocated a NIS 8 million budget ($2.1 million) to finance research in the field of medical cannabis growth, biochemistry and medicine.
Thirteen projects have been chosen, the ministry said, among which are the identification of new strains of cannabis; the use of cannabis to improve vision, fight intestinal cancer and boost the body's acceptance of transplanted organs; the improvement of watering and fertilizing of the cannabis plant; and the development of ways to combat cannabis plant diseases and pests..
The use of medical marijuana is gaining popularity around the world, the ministry said, with research backing up its beneficial effects. The growth of the plant, however, must undergo strict quality control and research in the sector is essential, the statement said.
Medical cannabis is provided to patients for relief from symptoms and pain, as well as physical and mental stress. The international medical cannabis market is forecast to be worth approximately $20 billion within a decade, and some 1% of the global population are estimated to become potential medical cannabis users at some point during their lifetime.
Israel is well-known as a pioneer in medical cannabis. Last summer, the government approved a plan initiated by Health Minister Yaakov Litzman (United Torah Judaism) to relax some of the medical cannabis requirements. The plan aims to expand the number of doctors who can issue cannabis prescriptions, remove limits on the number of marijuana growers, make cannabis available at approved pharmacies, and possibly eliminate the requirement for a permit from the Health Ministry so that just a doctor's prescription will be sufficient.
Prof. Raphael Mechoulam, previously at the Weizmann Institute and now at Hebrew University, is largely credited as the father of medical cannabis for identifying and identifying tetrahydrocannabinol (commonly known as THC) in 1964. THC is the active compound in marijuana that produces the "high" sought after by recreational users. Another main active compound in marijuana is cannabidiol (CBD), which has medical benefits, including anti-inflammatory properties.


text:
Toddler left in car at Gig Harbor gas station
By - Associated Press - Thursday, November 17, 2016
GIG HARBOR, Wash. (AP) - Authorities say a 2-year-old was abandoned over the weekend at a gas station near Tacoma.
The News Tribune reports (https://goo.gl/FubbJr ) an employee at a Gig Harbor-area gas station called 911 Sunday after noticing a toddler left alone in a car parked by the gas pumps.
Pierce County sheriff's spokesman Ed Troyer says a deputy found the child sleeping in the back seat.
Troyer says the deputy saw drug paraphernalia and apparent heroin residue in the vehicle.
The deputy called Child Protective Services and was connected with the child's grandmother, who came to the scene.
Troyer says the girl was placed in foster care and the family has had contact with the mother, who has not been arrested.
The case will be forwarded to prosecutors for possible charges.
Information from: The News Tribune, https://www.thenewstribune.com


text:
The Ö letter in "Coördinator"
I was watching some Pink Panther episodes on YouTube, and I noticed something weird.
The word COORDINATOR is written COÖRDINATOR with an Ö.
I searched for it in dictionaries and etymology references but found nothing.
Where did it come from? And are there any other similar cases?
spelling letters-of-the-alphabet diacritical-marks
rjpond
HamdikenHamdiken
"Naïve", "noël" and the given name "Zoë" are the only words I can think of that are still occasionally spelled with a diaeresis in English. All three come from the French where that's part of the correct spelling. My browser's spell checker doesn't accept any of them. This is the first time I've seen "coordinator" spelled with one.
– gotube ♦
@gotube "Chloë" is sometimes written with a diaeresis, although "Chloe" is probably more common, and the usual French spelling is "Chloé".
– rjpond
"Other similar cases?" (1) Some words have optional accents, e.g. "café", "fiancé", and a smaller number have optional cedillas, e.g. "soupçon", "façade". Dictionaries will usually show both spellings. Personally I strongly believe in retaining these marks, because they are indicators of pronunciation, but not everyone agrees. (2) In English poetry, you occasionally see things like "learnèd" with a grave accent on the "e". This is to make clear that the "e" is pronounced rather than silent. This isn't done in ordinary prose.
The New Yorker magazine still uses this diaresis to spell words like coöperate and reëvaluate. It is a slightly irritating quirk that is tolerated by those who regard the magazine with affection. See this article for more.
– TonyK
When I first read the question title, I was reminded of Peter Sellers' character Inspector Clouseau's pronounciaton of the word "bomb".
See Diaeresis:
The diaeresis indicates that a vowel should be pronounced apart from the letter that precedes it. For example, in the spelling 'coöperate', the diaeresis reminds the reader that the word has four syllables co-op-er-ate, not three, '*coop-er-ate'. In British English this usage has been considered obsolete for many years, and in US English, although it persisted for longer, it is now considered archaic as well
This is now considered an old-fashioned spelling practice in English.
nschneidnschneid
@randomhead Some words are still often written with a hyphen (perhaps especially in the UK). "Co-operate" and "co-ordinate" rarely have a hyphen nowadays, but "co-op" retains its hyphen to distinguish it from "coop". "Re-educate" normally still has a hyphen.
Possibly of note, this was inherited from English's Old French heritage, and is very different from the same symbology found in other Germanic languages, where it either forms a completely different letter (such as in Swedish) or modifies the pronunciation (as is the case of the German umlaut).
– Austin Hemmelgarn
The name Brontë is another relatively well-known example. As with the other examples, the diaresis is usually omitted these days.
– Caledon
In the case of a final e that might be mistaken for a silent e, I see é used much more frequently than ë.
– KRyan
@BruceWayne However, The New Yorker is well known for its style guide holding on to older practices which are no longer used by other English publications. Or, in other words, it deliberately affects an archaic style due to tradition. (Hence the reference to having a special machine to "punch out the dots.")
– trlkly
The letter o with umlaut (ö) quite frequently appears in German languages. I do not know where the clip comes from, but the below is the explanation from Wikipedia.
Ö in other languages
The letter ö also occurs in two other Germanic languages: Swedish and Icelandic, but it is regarded there as a separate letter, not as an umlauted version of o. Apart from Germanic languages, it occurs in the Uralic languages Finnish, Karelian, Veps, Estonian, Southern Sami, and Hungarian, in the Turkic languages such as Azeri, Turkish, Turkmen, Uyghur (Latin script), Crimean Tatar, Kazakh, and in the Uto-Aztecan language Hopi, where it represents the vowel sounds [ø, œ]. Its name in Finnish, Swedish, Icelandic, Estonian, Azeri, Turkish, Turkmen, Uyghur, Crimean Tatar, Hungarian, Votic and Volapük is Öö [øː], not "O with two dots" since /ø/ is not a variant of the vowel /o/ but a distinct phoneme.
bobby markbobby mark
That's not a very useful answer, to be honest. Its use in other Germanic languages is irrelevant. In fact, although English is genealogically a Germanic language, the use of the diaeresis to separate two vowels (not to create a separate vowel sound as in German or Swedish) is more akin to how the tréma is used in French.
The German word umlaut literally means "Change of sound" (so -au "ow" becomes -äu "oy"), whereas diaeresis for the English symbol comes from the Greek διαιρεῖν "to divide, separate" and allows adjacent vowels to be distinguished from each other.
Not the answer you're looking for? Browse other questions tagged spelling letters-of-the-alphabet diacritical-marks .
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text:
Q: Pagination not working with WP_query I'm trying to list the posts from the category 'alps'. The problem is if I define 'posts_per_page'=> -1, that works fine and I get the complete list, but if I ask for a number of posts I just get the same posts repeating page after page. Here's my loop-alps.php file.
<?php
$args = array(

'order' => 'asc',
'order_by' => 'title',
'posts_per_page'=> 5,
'category_name'=> 'alps'
);

$wp_query = new WP_Query($args);

if($wp_query->have_posts()): while($wp_query->have_posts()): $wp_query->the_post();
echo '
' .get_the_title() .'
';
the_post_thumbnail();
endwhile;

endif;
?>

<?php if(function_exists('tw_pagination')) tw_pagination($the_query); ?>

A: According to WP documentation (Codex) it seems that you should use the paged parameter in order to make it work correctly.
$args = array(

'order' => 'asc',
'order_by' => 'title',
'posts_per_page'=> 5,
'category_name'=> 'alps',
'paged' => get_query_var( 'paged' )
);

get_query_var( 'paged' ) - this function basically look for a GET variable in the URL, '?paged=X' if i'm not mistake. So make sure that by clicking on the pagination links you can see that this parameter is being added to the URL and is being changed accordingly.
Source: https://codex.wordpress.org/Class_Reference/WP_Query#Pagination_Parameters

A: $paged = (get_query_var('paged')) ? get_query_var('paged') : 1;
$args = array(

'order' => 'asc',
'order_by' => 'title',
'posts_per_page' => 12,
'category_name' => 'alps',
'paged' => $paged,
'offset'=> 1
);

A: Just add 'paged' => get_query_var( 'paged' ), like this, adjust it to your own
<?php
$paged = ( get_query_var( 'paged' ) ) ? get_query_var( 'paged' ) : 1;
$myposts = array(
    'showposts' => 6,
    'post_type' => 'your-post-type',
    'orderby' => 'date',
    'paged' => get_query_var( 'paged' ),
    'tax_query' => array(
        array(
        'taxonomy' => 'your-taxonomy',
        'field' => 'slug',
        'terms' => 'your-terms')
    )
);
$wp_query= null;
$wp_query = new WP_Query();
$wp_query->query($myposts);
?>

redpajama_set_name: RedPajamaStackExchange


text:
Q: Python - Access NumPy Array Item I am using Python for the first time in a long time and am slightly lost. I have a numPy array that looks like this when I print it..
   [[148 362]
     [153 403]
     [163 443]
     [172 483]
     [186 521]
     [210 553]
     [239 581]
     [273 604]
     [314 611]
     [353 602]]

I am trying to get the 5 item from the array and save it as 2 variables, x and y.
I have tried accessing it using...
print("Item 5" + numpy_array[5])

But that is giving me an error
typeError: ufunc 'add' did not contain a loop with signature matching types dtype('S21') dtype('S21') dtype('S21')

A: Suppose your array is stored in variable called numpy_array, just do. Since your subarrays contains 2 elements, it will unpack the values into x and y
x, y = numpy_array[5]
print (x, y)
# (210, 553)

A: These are other examples:
print("Item 5: " + str(numpy_array[5]) ) #=> Item 5: [210 553]

print("Item 5: ", numpy_array[5][0], numpy_array[5][1] ) #=> Item 5:  210 553

print("Item 5: ", numpy_array[5][0], "-" , numpy_array[5][1] ) #=> Item 5:  210 553

print (f"Item 5: {numpy_array[5][0]}, {numpy_array[5][1]}" ) #=> Item 5: 210, 553


TAX OVERHAUL & MARYLAND: Senate Republicans were scrambling Thursday to lock down support for a major tax overhaul that could deliver President Donald J. Trump one of his first legislative victories while potentially cutting — or increasing — the taxes paid by nearly 3 million Marylanders, reports John Fritze for the Sun.
SECRETARY APPTS IN COURT: The feud over a pair of gubernatorial recess appointments seems poised to stretch into the 2018 General Assembly session, even as one of Gov. Larry Hogan's cabinet members hasn't been paid for six months, reports Danielle Gaines in the Frederick News-Post. An Anne Arundel County Circuit Court judge is considering a complaint filed by former Planning Secretary Wendi Peters and current Health Secretary Dennis Schrader against Maryland State Treasurer Nancy Kopp (D). Peters and Schrader are asking the court to declare budget language restricting their pay as unconstitutional and award them back pay from July 1, the date the budget took effect.
An Anne Arundel County Circuit Court judge will delay an order in a case that pits the controversial appointments against the state's treasurer and Democrats in the Maryland Senate. Judge Ronald Silkworth Thursday said he would delay a decision to allow attorneys for both sides to prepare proposed orders. Both sides are seeking summary judgments, and both sides warned of a severe constitutional crisis that would befall the state should the other prevail, reports Bryan Sears in the Daily Record.
ELECTION INTEGRITY: Efforts to improve the integrity of the election process in Maryland are gearing up ahead of next year's General Assembly session. Josh Kurtz writes in Maryland Matters that next Tuesday morning, good government advocates will join state Sen. Will Smith (D) and Dels. Kirill Reznik (D) and Eric Luedtke (D) at a Lawyers Mall news conference in Annapolis. The group will call on lawmakers to protect and expand ballot access in the state; legislation is pending.
BIG PAY HIKES FOR TEACHERS PROPOSED: Big increases in teacher salaries along with the creation of statewide career ladder that would put teachers in line with other "high-status professions" are among the key recommendations a statewide commission on school funding will make to the legislature this year, writes Len Lazarick of MarylandReporter.com. The Commission on Innovation and Excellence in Education, charged with looking at a wide range of education issues, will also recommend teams of teachers be given greater autonomy and spend less time in the classroom and more time collaborating on teaching strategies.
HOGAN CAN SAVE INSURANCE: The editorial board of the Sun opines that Gov. Larry Hogan can help save health insurance coverage for Marylanders, writing that, to his credit, Hogan has made several statements of support for the Affordable Care Act during the past year and in opposition to flawed "repeal and replace" bills advanced by members of his party in Congress. With the Senate poised to vote on a tax cut plan that includes a repeal of Obamacare's requirement that most people have insurance he has a chance to do more than talk. He can't stop Congress from making such a destructive move, but he can lend his support to an effort to preserve the benefits of the ACA in Maryland and to stave off the potential havoc in the state's insurance market that killing the individual mandate would cause.
BAKER ON PG SCHOOLS: Following a verbal scuffle with Gov. Larry Hogan, Prince George's County Executive Rushern L. Baker III (D) said Thursday that "significant systemic changes are coming" to the suburb's public school system as a result of a state-ordered audit, which found evidence of grade-tampering that resulted in an inflated number of high school graduates. Arelis Hernandez of the Post writes that Baker, who is seeking the Democratic nomination for governor in 2018, was awarded partial control of the troubled school system in 2012 and has touted improved test scores and graduation rates as one of his significant accomplishments.
LEADERSHIP CHANGES: Some high-profile organizations in the Maryland political and public policy sphere are going through some leadership changes. At Common Cause/Maryland, the good government group, Executive Director Jennifer Bevan-Dangel is leaving to become executive director of Advocates for Children and Youth, Josh Kurtz of Maryland Matters writes.
OUR MARYLAND CONFERENCE: In a Political Notes column, Josh Kurtz of Maryland Matters writes that Our Maryland, the newish progressive multi-issue education and advocacy organization, is hosting its initial conference – billed as a politics and policy summit – on Monday in College Park. The purpose of the event is to bring together activists, donors and stakeholders from across the progressive spectrum to talk about strategies for winning policy and political battles in 2018. It will focus on issues for the upcoming legislative session in Annapolis and how to chart a course for the general election.
UNIONS BACK EDWARDS: Four local unions representing thousands of Prince George's County hotel, food, retail and public-sector workers endorsed former congresswoman Donna F. Edwards on Thursday in the race to become the next county executive, Arelis Hernandez of the Post reports.
ETHICS REFORM IN FREDERICK: County Executive Jan Gardner (D) announced on Thursday that she'd reached a compromise on ethics reform legislation for the upcoming General Assembly session. The new bill reflects a compromise between Gardner and state Sen. Michael Hough (R-District 4), whose dueling reform bills last session both failed to pass, Danielle Gaines reports in the Frederick News-Post.
HOWARD BILLS: Members of Howard County's state delegation listened as residents gave their input Wednesday night on the 23 local bills they have proposed for the upcoming 2018 General Assembly legislative session, reports Kate Magill in the Howard County Times. The bills include a variety of issues, ranging from the creation of grants for local projects like an Ellicott City Public Arts Project to raising the Howard County sheriff's salary from $94,000 to $145,000 in 2019 and establishing a student loan assistance program for county teachers.
CITY COUNCILMEN SEEK FED PROBE: Two powerful Baltimore City councilmen called on Thursday for the police department to turn over the investigation into the killing of Det. Sean Suiter to federal authorities. The move came as federal prosecutors filed a new indictment against Sgt. Wayne Jenkins, a former member of Baltimore's corrupt Gun Trace Task Force, alleging that he duped Suiter seven years ago into finding drugs Jenkins had planted in a man's car, Justin Fenton of the Sun reports.
MD REPS SAY CONYERS SHOULD STEP DOWN: U.S. Reps. Steny Hoyer, John Delaney and John Sarbanes have all said that Rep. John Conyers, a Civil Rights hero who has been accused of repeated sexual harassment, should resign, writes Jenna Portnoy in the Post.


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Memorial Day is a day to remember fallen Vets who fought to protect this great nation. I salute and honor them. They gave their all for us.
Memorial Day is also a bookmark on the start of the summer season. It is around the time of year school gets out, weather grows warmer, and we all start thinking about the warm days of summer.
At the other end of summer sits Labor Day. It bookmarks the end of the summer season. School starts and people think of getting ready for autumn and the cooler months that follow.
It was Paul's and my choice to leave after Labor Day. We're doing this is hopes to avoid bigger crowds. In addition, we want cooler weather as we drive through the southeastern states.
This 30+ day venture will be leisurely. We're figuring about 2 hours driving maximum per day. The rest of the time will be photographing and capturing video of Route 66.
Some of that time might be spent searching too. There are sections of Route 66 that are not part of a contiguous route. We intend to find them too.


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I'm entering the New Year with zero pressure on my back to do anything other than remain open to the possibility of my potential and receptive to change. I've just never been a New Year's resolution kind of girl. I just believe in "Living Your Best Life".
If you have a list of resolutions, congrats and I'm routing for you!


Lischer Family - Lischer Holdings Corp.
Argue Construction Ltd. is highly experienced in all areas of commercial, industrial and institutional construction. Fully bonded and insured, the company offers general contracting, construction management and design/build services.
Our firm holds memberships in various industry organizations, including the Professional Engineers of Ontario, the Ottawa Construction Association, Gold Seal Certification – Canadian Construction Association and the General Contractors Association of Ottawa.


At his young age of only 19 Harvey Leigh Cantwell alias HRVY has already accomplished so much. Being found on Facebook the London based singer and songwriter quickly signed to Universal but music took a backseat until he was 16 and graduated high school. Since then he has been a presenter on BBC, toured with Little Mix and Jessie J, now signed with Virgin EMI, went on Magcon tour in Barcelona in 2017 and his most recent "Personal" song has millions of plays. In our interview we talked about his childhood in Kent, being friends with Loren Gray and that he is still the same person before his success.


FWO provide information on Labour Hire and What Growers Need to Know!
Engaging labourers through a third party contractor can seem like an easy option. However, there are risks that growers need to manage.
Contracting out labour for a very low price may result in employees throughout the supply chain missing out on basic rights like minimum wages, penalties, loadings, overtime, allowances and leave.
It may also mean the contractor is engaging in sham contracting arrangements with sub contractors to avoid their legal responsibilities as an employer.
If the price of a proposed contract seems too good to be true, it probably is.
Why should growers care about what happens in their supply chain?
expose growers to financial penalties if workplace laws are breached.
We are relying on growers and their communities to help us uncover rogue contractors and make sure they are following Australian workplace laws. Contact us to report rogue contractors.
For information about why you should manage your labour contracting, and tips and tools to help you, visit our Contracting labour and supply chains section.
How are you hiring your workers?
If they are engaging employees by the piece, make sure they have written agreements in place.
Will you give them a Fair Work Information Statement?
Will you give them pay slips?
Do you know which award will cover them?
Growers should make sure they have a written contract with their labour hire contractor outlining what is expected of the contractor, in particular that they will employ employees in line with Australian workplace laws.
You should also check any state requirements as some states have laws where labour hire providers are required to have an appropriate licence. Read about state Labour hire licensing laws in our Library to find out if they apply to you.
Find out more about sham contracting laws on our Independent contractors page.


I made this card for the current Paper Smooches Sparks Challenge. I used the Paper Smooches stamp set called Spookalicious. The papers are from K&Company. Thanks for taking a look!
Isn't this such a fun set!? Love the card!
Fantastic Donna, love the sentiment you chose!