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JAMES CAMPBELL - Illinois - people search, genealogy, find deceased relatives and locate ancestors
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342-07-6297 October 1, 1896 June 1, 1964 67 years IL 60619 (Chicago, Cook County)
330-32-5973 August 2, 1893 September 1, 1965 72 years IL 61938 (Mattoon, Coles County)
330-32-3606 October 8, 1886 September 1, 1966 79 years IL 60953 (Milford, Iroquois County)
347-05-9839 January 19, 1886 September 1, 1966 80 years IL 62946 (Harrisburg, Saline County)
320-44-4207 June 19, 1872 October 1, 1966 94 years IL 62959 (Marion, Williamson County)
251-09-9240 January 1, 1917 May 1, 1967 50 years IL 60610 (Chicago, Cook County)
334-05-3389 April 17, 1887 June 1, 1967 80 years IL 61350 (Ottawa, La Salle County)
329-07-0824 November 4, 1886 January 1, 1969 82 years IL 60475 (Steger, Cook County)
310-40-4800 February 10, 1896 December 1, 1969 73 years IL 61944 (Paris, Edgar County)
556-09-5287 April 26, 1896 March 1, 1970 73 years IL 62286 (Sparta, Randolph County)
340-24-4952 June 16, 1878 November 1, 1970 92 years IL 60609 (Chicago, Cook County)
563-01-2671 August 25, 1899 December 1, 1970 71 years IL 62002 (Alton, Madison County)
347-22-8777 June 7, 1904 December 1, 1970 66 years IL 60637 (Chicago, Cook County)
361-05-8436 June 18, 1888 March 1, 1971 82 years IL 62859 (McLeansboro, Hamilton County)
318-01-7556 December 2, 1905 December 1, 1971 65 years IL 60651 (Chicago, Cook County)
335-05-5423 August 31, 1897 March 1, 1973 75 years IL 60459 (Burbank, Cook County)
329-03-3402 October 10, 1892 July 1, 1973 80 years IL 60645 (Chicago, Cook County)
331-05-7941 September 4, 1899 September 1, 1973 73 years IL 61103 (Rockford, Winnebago County)
329-10-9165 March 14, 1908 April 1, 1974 66 years IL 62207 (Alorton, St. Clair County)
333-09-8331 December 15, 1902 February 1, 1975 72 years IL 60174 (St. Charles, Kane County)
403-22-1743 September 4, 1917 June 1, 1975 57 years IL 62301 (Quincy, Adams County)
343-10-6782 March 11, 1907 July 1, 1975 68 years IL 60477 (Tinley Park, Cook County)
321-01-5804 August 21, 1904 December 1, 1975 71 years IL 60641 (Chicago, Cook County)
327-18-0282 February 3, 1893 April 1, 1976 83 years IL 60639 (Chicago, Cook County)
377-09-3380 September 23, 1891 October 1, 1976 85 years IL 60015 (Deerfield, Lake County) 60015 (Deerfield, Lake County)
324-05-9524 August 10, 1908 March 1, 1977 68 years IL 60525 (La Grange, Brown County)
347-36-5363 July 7, 1942 March 1, 1977 34 years IL 62326 (Colchester, McDonough County)
• JAMES CAMPBELL User-Added Photos
This is a photo of Jim Campbell after a heat race win at the Srpingfield Speedway, - submitted by on 03/03/2013
325-16-1195 January 21, 1921 November 1, 1977 56 years IL 60617 (Chicago, Cook County) 60653 (Chicago, Cook County)
315-18-2848 November 9, 1903 November 1, 1977 73 years IL 62467 (Teutopolis, Effingham County)
335-03-6791 December 19, 1917 February 1, 1979 61 years IL 60445 (Midlothian, Cook County) 60445 (Midlothian, Cook County)
322-09-0257 October 4, 1892 May 1, 1979 86 years IL 60624 (Chicago, Cook County) 60653 (Chicago, Cook County)
342-09-6656 January 28, 1909 February 1, 1980 71 years IL 60545 (Plano, Kendall County) 60545 (Plano, Kendall County)
342-05-9136 June 20, 1911 June 1, 1980 68 years IL 62694 (Winchester, Scott County)
313-01-9828 August 23, 1914 July 1, 1980 65 years IL 61911 (Arthur, Douglas County) 61910 (Arcola, Douglas County)
353-26-8213 July 29, 1907 November 1, 1980 73 years IL 61853 (Mahomet, Champaign County)
328-40-6420 March 21, 1947 November 1, 1980 33 years IL 62401 (Effingham, Effingham County) 62401 (Effingham, Effingham County)
327-18-4660 August 10, 1904 August 1, 1981 76 years IL 62521 (Decatur, Macon County) 62523 (Decatur, Macon County)
351-03-6776 February 8, 1896 August 1, 1981 85 years IL 60637 (Chicago, Cook County) 46205 (Indianapolis, Marion County)
486-14-7947 June 9, 1918 August 24, 1982 64 years IL 62049 (Hillsboro, Montgomery County)
329-12-0473 July 13, 1907 October 1, 1982 75 years IL 62526 (Decatur, Macon County)
360-18-7795 September 8, 1924 March 1, 1983 58 years IL 60953 (Milford, Iroquois County) 60953 (Milford, Iroquois County)
344-22-2824 February 4, 1909 October 1, 1983 74 years IL 60644 (Chicago, Cook County) 60644 (Chicago, Cook County)
330-05-0620 September 22, 1900 August 1, 1984 83 years IL 61951 (Sullivan, Moultrie County)
354-09-5612 August 1, 1894 February 1, 1985 90 years IL 60452 (Oak Forest, Cook County)
237-36-1327 November 20, 1927 June 1, 1985 57 years IL 60644 (Chicago, Cook County)
357-09-5076 December 8, 1916 June 1, 1985 68 years IL 61920 (Charleston, Coles County)
407-07-4317 November 8, 1921 February 1, 1986 64 years IL 62942 (Grand Tower, Jackson County)
JAMES R CAMPBELL
358-10-8894 March 22, 1903 February 24, 1988 84 years IL 61833 (Tilton, Vermilion County)
JAMES E CAMPBELL
279-05-6961 October 7, 1907 March 24, 1988 80 years IL 60623 (Chicago, Cook County)
JAMES A CAMPBELL
352-01-5715 January 16, 1901 August 29, 1988 87 years IL 60472 (Robbins, Cook County)
332-12-6535 April 5, 1906 July 27, 1989 83 years IL 62035 (Godfrey, Madison County)
JAMES W CAMPBELL
349-16-0014 September 25, 1923 June 1, 1990 66 years IL 60617 (Chicago, Cook County)
JAMES H CAMPBELL
360-30-9138 January 8, 1902 March 11, 1991 89 years IL 62638 (Franklin, Morgan County)
374-22-4202 December 20, 1925 June 1, 1991 65 years IL 60630 (Chicago, Cook County)
321-40-0966 July 14, 1947 June 9, 1991 43 years IL 60628 (Chicago, Cook County)
413-12-8224 January 12, 1914 October 2, 1991 77 years IL 62521 (Decatur, Macon County)
277-03-1914 September 12, 1912 February 16, 1993 80 years IL 61244 (East Moline, Rock Island County)
JAMES M CAMPBELL
113-10-0492 August 9, 1917 December 15, 1994 77 years IL 60084 (Wauconda, Lake County)
JAMES L CAMPBELL
359-32-7115 November 19, 1939 April 3, 1995 55 years IL 62563 (Rochester, Sangamon County)
342-03-9852 April 22, 1906 January 5, 1996 89 years IL 62948 (Herrin, Williamson County)
329-20-1381 June 6, 1919 January 18, 1997 77 years IL 60617 (Chicago, Cook County)
319-14-0031 March 17, 1920 June 3, 1997 77 years IL 61761 (Normal, McLean County)
409-09-1987 September 1, 1905 November 25, 1997 92 years IL 60634 (Chicago, Cook County)
345-22-6887 May 21, 1929 June 2, 1998 69 years IL 60131 (Franklin Park, Cook County)
JAMES I CAMPBELL
355-10-8144 January 19, 1919 July 15, 1998 79 years IL 60030 (Grayslake, Lake County)
334-30-6280 September 14, 1938 August 2, 1998 59 years IL 61753 (Lexington, McLean County)
346-56-5921 March 19, 1927 July 23, 1999 72 years IL 62521 (Decatur, Macon County) 62523 (Decatur, Macon County)
498-26-5863 September 1, 1929 September 10, 1999 70 years IL 61611 (East Peoria, Tazewell County)
333-28-0394 September 7, 1935 February 2, 2000 64 years IL 60653 (Chicago, Cook County)
356-24-6498 August 18, 1933 February 25, 2000 66 years IL 60422 (Flossmoor, Cook County)
360-28-2051 October 17, 1935 July 25, 2000 64 years IL 60108 (Bloomingdale, DuPage County)
324-26-4500 June 16, 1933 November 11, 2000 67 years IL 62204 (Washington Park, St. Clair County)
338-20-2180 April 13, 1929 March 21, 2001 71 years IL 62520 (Dawson, Sangamon County)
336-16-9331 December 17, 1921 May 24, 2001 79 years IL 62959 (Marion, Williamson County)
343-34-4699 December 10, 1940 August 15, 2001 60 years IL 62286 (Sparta, Randolph County)
351-12-8301 May 23, 1919 August 16, 2001 82 years IL 60530 (Lee, Lee County)
338-30-8521 April 20, 1937 December 19, 2001 64 years IL 60643 (Chicago, Cook County)
357-34-5503 May 12, 1945 May 17, 2003 58 years IL 62573 (Warrensburg, Macon County)
357-10-8938 December 16, 1918 September 7, 2003 84 years IL 62864 (Mount Vernon, Jefferson County)
337-12-9278 September 22, 1923 October 18, 2003 80 years IL 60525 (La Grange, Brown County)
425-82-9620 February 17, 1940 April 3, 2004 64 years IL 60636 (Chicago, Cook County)
342-24-7156 September 6, 1928 September 1, 2004 75 years IL 60101 (Addison, DuPage County)
130-28-7258 December 22, 1937 February 8, 2006 68 years IL 62914 (Cairo, Alexander County)
345-22-0686 October 5, 1930 July 21, 2006 75 years IL 60626 (Chicago, Cook County)
264-11-7533 March 25, 1953 January 17, 2008 54 years IL 60516 (Downers Grove, DuPage County)
339-44-9230 June 2, 1952 February 29, 2008 55 years IL 61605 (Peoria, Peoria County)
326-26-1219 May 24, 1933 January 20, 2009 75 years IL 60651 (Chicago, Cook County)
352-09-7321 March 18, 1918 April 12, 2009 91 years IL 61442 (Keithsburg, Mercer County)
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1988-10-31 Assigned to MICROCHIP TECHNOLOGY INCORPORATED reassignment MICROCHIP TECHNOLOGY INCORPORATED ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: HUBER, ROBERT J.
A silicon substrate with a drain area formed therein is used for the base of the device. A first polysilicon gate is disposed above the substrate with a layer of gate oxide therebetween. Adjacent to the first gate and contiguous to the same plane is a second polysilicon gate. The second gate and the substrate are separated by a layer of tunnel oxide and silicon nitride. The silicon nitride being used to store a charge. The state of the device is determined by the presence of a capacitance in the substrate generated by the charge on the silicon nitride. This device may function as a nonvolatile memory or a dynamic random access memory with the capability of capturing its DRAM state.
The present invention relates, in general, to semiconductor memory devices and, more particularly to nonvolatile semiconductor memory devices. These include devices often referred to in the industry as EPROMs (Erasable Programmable Read Only Memories) or EEPROMS (Electrically Erasable Programmable Read Only Memories).
Semiconductor memory devices are generally designed in an array of individual memory cells. Nonvolatile semiconductor memory cells generally consist (Metal Oxide Semiconductor) of a MOS transistor having a threshold voltage that can be electrically changed. There are two general, types of nonvolatile semiconductor memory cells, namely a floating gate type, having variations known as FLOTOX (FLOating gate Tunnel OXide) and textured polysilicon, and an SNOS (Silicon-Nitride-Oxide-Silicon) type having variations known as SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) and MNOS (Metal-Nitride-Oxide-Silicon).
In the floating gate type of device, two gates are utilized, a floating gate and a control gate. The floating gate is disposed between and isolated from the control gate and a semiconductor substrate.
The memory state of the floating gate device is determined by the charge on the floating gate. In an n-channel device, an accumulation of electrons on the floating gate causes a high threshold voltage; whereas, a deficit of electrons (a net positive charge) causes a low (or possibly negative) threshold voltage. In its usual application, with the control gate at 0 volts, current will flow through the cell if the floating gate is uncharged or has a net positive charge (erased), which is a logic 1 state. Accordingly, current will not flow through the cell if the floating gate is sufficiently negatively charged (programmed), which is the logic 0 state.
Because the floating gate is a good electrical conductor, lateral charge transfer in the floating gate takes place easily. As a result, vertical charge transfer during programming need only take place in one localized area of the channel. However, this property makes the floating gate device more susceptible to defects in the insulator surrounding the floating gate.
These floating gate cells require both drain and source regions which make the area required for each cell relatively large. The large cells in turn limit the number of devices that can be placed in a given area. With nonvolatile memory sizes approaching the 1 million bit mark on a single die, any reduction in cell size is of great economic benefit.
The second type of nonvolatile memory device is that referred to as SNOS. The SNOS memory device consists of a single transistor which has a polysilicon gate disposed on a silicon nitride layer on top of a thin layer of oxide on a silicon substrate. A charge is stored in discrete traps in the bulk of the nitride layer. Because of the discrete nature of the traps, lateral charge transfer does not readily occur. Therefore, to adequately program the memory transistor, vertical charge transfer must occur over a large area of the channel region. This makes the SNOS memory cell less susceptible to defects in the oxide layer disposed over the channel.
In the erased state, current may flow through the memory transistor even if the control gate is held at 0 volts because the erased state threshold voltage may be negative. This current which flows through unaddressed, erased, cells can accumulate for a particular column resulting in a false "on" state being generated when a written memory cell is addressed. As a result of this false "on" current in an array, select transistors are required to operate the cells properly. These select transistors can substantially increase the area required to fabricate an array of cells.
Accordingly, it is an object of the present invention to provide a semiconductor memory device which overcomes the above deficiencies.
A further object of the present invention is to provide a semiconductor memory device that is nonvolatile.
Another object of the present invention is to provide a semiconductor memory device that requires less area.
Still another object of the present invention is to provide a semiconductor memory device that does not require a formed source area for the select transistor.
Yet another object of the present invention is to provide a semiconductor memory device that does not require formed source or drain areas for the nonvolatile memory structure.
Another object of the present invention is to provide a semiconductor memory device that operates with a single transistor, or single cell, providing both the memory and select functions.
Still another object of the present invention is to provide a semiconductor memory device that is capable of operating as a dynamic random access memory (DRAM) device.
Yet another object of the present invention is to provide a semiconductor memory device that will function as a shadow RAM or a random access memory device that has the ability to store its state in the event of a power outage or the like.
A preferred embodiment of the present invention consists of a semiconductor memory device having a silicon substrate with a drain region formed therein. A first polysilicon gate is disposed above the substrate with a layer of gate oxide therebetween. Adjacent to the first gate and disposed above the substrate is a second polysilicon gate. The second gate and the substrate are separated by layers of tunnel oxide and silicon nitride. Preferably, the second gate would be in the same plane and as close as possible to the first gate while still maintaining an isolation between the two gates. In actual practice, it may be necessary to have the second gate overlapping the first gate while maintaining the isolation between the two gates. Alternatively, the first gate may be stepped over the second gate while maintaining the isolation between the two gates.
FIG. 4A is a cross-sectional view of a practical version of the preferred embodiment of the memory device of FIG. 3.
FIG. 4B is a cross-sectional view of an alternative practical version of the preferred embodiment of the memory device of FIG. 3.
FIG. 13 is a cross-sectional view of a third embodiment of the present invention.
Referring initially to FIG. 1A, a cross-sectional view of one embodiment of the prior art floating gate memory device often referred to as an EPROM, generally designated 10, is illustrated. Device 10 consists of a p-type substrate 11 having an n-type drain 12 and an n-type source 13 formed therein. Located above substrate 11 is a layer of oxide 14 having a pair of gates 15 and 16 disposed therein. Gate 15 is a polysilicon floating gate and gate 16 is usually a polysilicon control gate. A passivation layer, such as silicon nitride or silicon dioxide, 17 covers the device. The portion of the layer of oxide 14 located between floating gate 15 and substrate 11 is on the order of 200 Angstroms thick.
Referring to FIG. 1B, a cross-sectional view of a second embodiment of a prior art floating gate memory device, known as an EEPROM, generally designated 10', is illustrated. Device 10' is similar to device 10 with the difference being in the design of gates 15 and 16. As shown, a portion of gate 15' is disposed closer to drain 12. The leaves a very thin layer of oxide 14 between gate 15' and drain 12. This thin layer of oxide 14 makes possible the electrical erasing of device 10'. Gate 16' also has a similar design to maintain the distance between the gates.
In operation, if a sufficiently large positive voltage relative to drain 12 exists on floating gate 15, electrons will tunnel from drain 12 to floating gate 15 becoming trapped thereon. The presence or absence of excess electrons on floating gate 15 determines the logical state of the device. The large positive voltage may be applied to floating gate 15 by capacitive coupling from control gate 16.
In an n-channel device, an accumulation of electrons on the floating gate from the drain causes a high threshold voltage. A high current will flow through the cell to ground if the floating gate is uncharged (erased), which is the logic 1 state; and current will not flow, or possibly a very low current will flow, if the cell is charged (programmed), which is the logic 0 state. Examples of these types of cells can be found in U.S. Pat. Nos. 4,618,541 issued to Forouhi et al. and 4,665,426 issued to Allen et al. A current sensing amplifier associated with the cell provides a digital output corresponding to the flow of current through the cell to ground. An example of a current sensing amplifier can be found in U.S. Patent No. 4,654,831 issued to Bhimachar Venkatesh.
To erase a charged cell 10 of FIG. 1A the charge must be removed, or decreased, on floating gate 15. One way of accomplishing this charge reduction is to expose the floating gate to UV (UltraViolet) light represented by arrows 18. The impinging radiation excites the electrons trapped on floating gate 15 causing them to move off gate 15 to gate 16 or substrate 11.
These types of devices, while adequate for many applications, are inconvenient to erase in that the device must be removed from what ever system it resides and exposed under a UV light for an extended period of time. These devices also require that both source and drain regions be formed in the substrate which greatly effects the size of the memory cells.
Device 10' of FIG. 1B, may be erased if a sufficiently large negative voltage is applied between floating gate 15' and drain 12. Electrons will tunnel from gate 15' to drain 12 removing the trapped electrons from gate 15'. The negative voltage may be applied by capacitive coupling by holding control gate 16' at ground potential and driving drain 12 to a positive potential. Thin oxide 14 between gate 15' and drain 12 allows tunneling at practical voltages.
Each memory cell 10 also contains a select transistor 19 which is comprised of a gate 29, a drain 38, and utilizes region 12 as a source. Select transistor 19 is provided to prevent the flow of current through cell 10 when cell 10 is not addressed. Select transistor 19 will prevent the false "on" readings discussed above.
Referring now to FIG. 2, a prior art SNOS type of memory cell, generally designated 20 is illustrated. Cell 20 consists of a p-type substrate 21 having an n-type source region 22 and an n-type drain region 23 formed therein. Above substrate 21 and between source 22 and drain 23 is a thin layer of oxide 24, approximately 20 Angstroms thick. Above oxide 24 is an area of nitride 25 and above nitride 25 is a polysilicon control gate 26.
A charge is stored in discrete traps in nitride 25. Because of the discrete nature of the traps, charge transfer has to occur over a large channel region.
In the erased state, in which there are no excess electrons stored in nitride 25 or a deficit of electrons (a net positive charge) in nitride 25, current will flow through the memory transistor of cell 20. This current flow will occur even if control gate 26 is at ground. In an array of memory cells, such as any programmable read only memory device, all erased cells connected to a column will pass current to the column resulting in a false state indicator for the addressed cell. To prevent this false indicator, a select transistor 27 is provided with each cell 20.
Select transistor 27 is comprised of a select drain 28 and source 23, which is the same area as drain 23 of the memory cell. Located above substrate 21 in an oxide layer 30 and between drain 28 and source 23 is a polysilicon access gate 31.
Cell 20 is programmed by applying high voltage to gate 26 and can be erased by grounding gate 26 and taking substrate 21 to a high voltage. Again, a drawback of cells such as 20 is the area which they require. In addition to having both source 22 and drain 23 formed in substrate 21, room must be provided for an extra gate 31 and formed drain 28.
These types of cells also utilize sensing amplifiers as described above to determine the logical state of the cell.
Referring to FIG. 3, a cross-sectional view of a memory device, generally designated 33, embodying the present invention is illustrated. Memory device 33 consists of a substrate 34 of one conductive type having a drain 35 of opposite conductivity. For the present example, substrate 34 will be taken as a p-type substrate and drain 35 as an n-type drain.
Above substrate 34 and adjacent drain 35 is a polysilicon select gate 36. Select gate 36 is separated from substrate 34 by a gate oxide layer 37. Gate oxide layer 37 may be approximately 200-500 Angstroms thick.
Located adjacent to select gate 36 is a memory gate 38. While memory gate 38 is adjacent to select gate 36, the two gates remain isolated from each other. Below gate 38 is a charge retaining area 40. Charge retaining area 40 is preferably a silicon nitride layer approximately 50-500 Angstroms thick. Between area 40 and substrate 34 is tunnel oxide layer 41. Tunnel oxide layer 41 may be approximately 15-30 Angstroms thick with the ideal thickness being approximately 18 Angstroms. On either side of cell 33 are areas of field oxide 43.
In FIG. 3, an idealized embodiment of the present invention is illustrated. However, from a processing standpoint, it is impractical to process a cell 33 having gates 36 and 38 contiguous to the same plane at their adjacent edges, while insuring they remain isolated from each other. Therefore, as illustrated in FIGS. 4A and 4B, a cross-sectional area of alternative practical cell designs are illustrated.
A cell 33' is illustrated in FIG. 4A having the same elements as cell 33 in FIG. 3. The difference between cells 33 and 33' is that gate 38, nitride layer 40, and tunnel oxide 41 step up and to some extent overlay gate 36. Alternatively, as shown in FIG. 4B, gate 36 and oxide 37 may step up and to some extent overlay gate 38. The objective here is to enable the inversion layers, which may be formed in substrate 34 below gates 36 and 38, to make contact.
A schematic representation of an equivalent circuit, generally designated 44, of cell 33 is illustrated in FIG. 5. Circuit 44 consists of a transistor 45 and a capacitor 46. The drain of transistor 45 is drain 35, FIG. 3. The gate of transistor 45 is gate 36, FIG. 3. The source of transistor 45 is the inversion layer 56 (FIG. 6A) generated by gate 38, FIG. 3, if the inversion layer exists. If the inversion layer does not exist, transistor 45 has no source and there is no connection from node 50 to the source of transistor 45. Furthermore, if the inversion layer does not exist, capacitor 53 does not exist and node 50 is coupled to ground. Conditional capacitor 53 and the inversion layer exist depending on the charge in nitride 40, FIG. 3.
The writing operation of cell 33 is illustrated in FIGS. 6A and 6B. To negatively charge nitride layer 40, contact C and the substrate are coupled to ground while contacts A and B are coupled to a positive programming voltage, Vp. Having contact B coupled to a positive voltage creates an inversion layer 55 below gate 36 in substrate 34. An inversion layer 56 is also generated below gate 38 in substrate 34 by gate 38.
Because of the close proximity (as described with respect to FIGS. 3 and 4) of gates 36 and 38, inversion layers 55 and 56 will be in contact. This contact between inversion layers 55 and 56 permits electrons 57 to travel from drain 35 through inversion layers 55 and 56. Electrons 57 will then traverse tunnel oxide 41 and become trapped in nitride layer 40. This results in nitride layer 40 having a net negative charge. After node A is returned to ground potential, the electrons trapped in nitride 40 will prevent the formation of inversion layer 56 and the accompanying depletion region in substrate 34. This lack of an inversion layer in substrate 34 means that conditional capacitor 53 of FIG. 5 is not generated and that node 50 is coupled only to ground 52. The lack of conditional capacitor 53 represents a logic 1 for cell 33 which will be discussed below.
A write inhibit operation (or writing of a logic 0) of cell 33 is illustrated in FIG. 6C. If contact C is connected to the programming voltage, Vp, instead of ground, the voltage of inversion layer 55 will be approximately the same as Vp. Therefor, the electric field across tunnel oxide 41 will be near zero and insufficient to cause electrons 57 to tunnel from inversion layer 55 to nitride layer 40. As a result of the lack of electron tunneling, no programming will occur.
The erasing operation of cell 33 is illustrated in FIGS. 7A and 7B. To erase cell 33, the negative charge in nitride layer 40 must be removed. This removal is accomplished by coupling contact A to a reverse programming voltage, -Vp, while substrate 34 is coupled to a positive voltage. This causes the negative charge in nitride 40, represented by electrons 57, to be repelled into substrate 34 and possibly gate 36.
As shown in FIG. 7B, when gate 38 is returned to zero volts, nitride layer 40 will retain a net positive charge. This will generate an inversion layer 56 with an associated depletion region 56' in substrate 34 below gate 38. o Inversion layer 56, depletion region 56', and substrate 34 form a capacitance, conditional capacitor 53 of FIG. 5. Having capacitor 53 present represents a logic 0 for cell 33 as will be discussed below.
Referring now to FIGS. 8A-8D and 9A-9D, partial crosssectional views of cell 33 without (FIGS. 8A-8D) and with (FIGS. 9A-9D) inversion layer 56 and depletion region 56' are illustrated. In FIG. 8A, cell 33 is shown at equilibrium with a net negative charge on nitride layer 40. In FIG. 9A, cell 33 is shown at equilibrium with a net positive charge on nitride layer 40 and inversion layer 56 and depletion region 56'.
In order to read cell 33, a pre-read cycle must be completed. This pre-read cycle consists of setting contact C to 5 volts. While contact C is set to 5 volts, contact B is taken to 5 volts and then reduced to 0 volts. By placing the potential of contact B at 5V, inversion region 55 is generated in substrate 34. In FIG. 9B, inversion region 55 couples drain 35 to inversion region 56. This causes a 5 volt potential to be stored on capacitor 53, FIG. 5. In FIG. 8B, since there is no inversion layer 56, there is no capacitor to store the voltage and no change is caused in cell 33.
The next step in the process is the read step. To read cell 33, terminal C is set to a predetermined voltage, 5 volts in this example. Terminal B is then set to 5 volts to again generate inversion region 55. This enables the charge stored on the capacitor to be transferred to drain 35.
As shown in FIG. 8D, since there is no inversion layer 56 or depletion region 56', there is no capacitor. There is also no connection between the source of transistor 45 and node 50. Therefore, there is no current flow through cell 33 to be sensed by a sensing amplifier. The sensing amplifier will then return a logic 1 for cell 33.
When a capacitor is present, such as capacitor 53 of FIG. 9D, inversion region 55 will couple inversion layer 56 to drain 35. Inversion region 56 forms one plate of capacitor 53. As capacitor 53 has been charged to 5 volts in the pre-read cycle of this example, a pulse of current will flow through circuit 44 as shown. This current will be detected by a sensing amplifier and a logic "0" will be indicated for cell 33.
Therefore, the present invention provides a nonvolatile semiconductor memory cell which does not require a formed source or drain region and operates logically depending upon the presence or absence of a capacitance.
The present invention may also function as a dynamic random access memory. The DRAM function is illustrated in FIGS. 10-12. The process starts by creating a capacitor in all of the cells of the array. As shown in FIG. 10, substrate 34 is coupled to a positive programming voltage, Vp, while terminals A, B, and C are set to a reference voltage, such as 0 volts. If a negative charge exists in nitride layer 40, the action of setting substrate 34 to Vp causes the negative charge to be drawn out of, or discharged from, nitride layer 40. If a positive charge exists in nitride layer 40, there will be little or no effect on nitride 40. In either case, the result is that nitride layer 40 is left with a net positive charge when terminal A is reset to zero volts. This net positive charge causes inversion layer 56 and depletion region 56' to be generated resulting in a capacitor consisting of inversion layer 56, depletion region 56', and substrate 34.
To write data into cell 33, terminal B is set to 5 volts; terminal A is held at a convenient voltage (which may be grounded); and terminal C is used as the data line. By setting terminal B to 5 volts, inversion layer 55 is created forming a link between inversion layer 56 and drain 35. If a logical data bit of 0 is to be stored, then line C is set to 0 volts, as shown in FIG. 11. Since inversion layer 56 is coupled to drain 35, the capacitor will be discharged leaving capacitor 53 with no charge.
If a logical data bit of 1 is to be stored, then line C is set to Vdd (usually 5 volts), as shown in FIG. 12. Since inversion layer 56 is coupled to drain 35, the capacitor will be charged to Vdd.
In order to read the state of cell 33, the same procedure is followed as set forth in FIGS. 8A-8D and 9A-9D.
The present invention may also be utilized as a shadow RAM. A shadow RAM is a nonvolatile type of back-up to a volatile memory device. In this instance, both the nonvolatile and volatile devices are in the same cell. If the cell is being operated as a DRAM and the sense amplifiers are designed to drive line C to either 0 or Vdd volts, then by raising terminals A and B to Vp and raising Vdd to Vp the current contents of DRAM cell 33 can be written into nonvolatile storage. This is useful if a power outage or similar situation occurs.
The above examples of the present invention have been limited to SNOS devices having a p-type substrate and an n-type diffusion. It should be understood that the above cells would operate in the same manner, with opposite polarities, if they were comprised of an n-type substrate having a p-type diffusion.
In FIG. 13, the present invention is illustrated in a SONOS configuration. A cell 33" is illustrated with the same configuration as cell 33 of FIG. 3, with the addition of an oxide layer 58 between memory gate 38 and nitride layer 40. Oxide layer 58 serves to prevent back injection from gate 38 to nitride layer 40.
Another modification of the present invention is to use a metal gate in place of polysilicon gate 38. This results in an MNOS (Metal-Nitride-Oxide-Silicon) cell. This configuration would have the same cross-sectional view as FIG. 3. An additional modification would produce an MONOS cell by disposing a layer of oxide between the metal and nitride layers.
Thus, it will be apparent to one skilled in the art, following a review of the above specification, that there has been provided in accordance with the invention, a device and method that fully satisfies the objects, aims, and advantages set forth above.
second insulating means for insulating said charge retaining means from said substrate, said second insulating means selectively permitting transfer of a carrier.
2. The apparatus of claim 1 wherein said first conductivity type is a p-type conductivity and said second conductivity type is an n-type conductivity.
3. The apparatus of claim 1 wherein said first conductivity type is an n-type conductivity and said second conductivity type is a p-type conductivity.
4. The apparatus of claim 1 wherein said first and second gate means are polysilicon.
5. The apparatus of claim 1 wherein said second gate means is a metal.
6. The apparatus of claim 1 wherein said first and second insulating means are silicon dioxide.
7. The apparatus of claim 1 wherein said charge retaining means is silicon nitride.
8. The apparatus of claim 1 further comprising third insulating means for insulating said charge retaining means from said second gate means.
nitride layer for retaining electrical charge disposed between said second oxide layer and said second gate.
10. The apparatus of claim wherein said first conductivity type is a p-type conductivity and said second conductivity type is an n-type conductivity.
11. The apparatus of claim 9 wherein said first conductivity type is an n-type conductivity and said second conductivity type is a p-type conductivity.
12. The apparatus of claim 9 wherein said first and second gates are polysilicon.
13. The apparatus of claim 9 wherein said second gate is a metal.
14. The apparatus of claim 9 wherein said first and second oxide layers are silicon dioxide.
15. The apparatus of claim 9 wherein said nitride layer is silicon nitride.
16. The apparatus of claim 9 further comprising a third oxide layer disposed between said nitride layer and said second gate.
bias means coupled to said gate means and said drain region for controllably changing the polarity of the total electrical charge on the nitride layer to selectively induce or not induce a capacitance between said substrate and an inversion layer created or not created in the surface of said substrate beneath said gate means according to said polarity of electrical charge on the nitride layer, whereby to enable storing information in said cell as the presence or absence of said capacitance.
whereby to create substantially contiguous inversion layers in said major surface of said substrate beneath said first and second gate layers according to said polarity of electrical charge on said nitride layer.
said contacts being arranged and adapted for respective connection of supply potentials thereto according to the desired said polarity of electrical charge on said nitride layer.
"XICOR" Data Book, Sep. 1987, pp. 8-6 to 8-10; 8∝48 to 8-49; 8∝109; and 8-117 to 8-120, Second Edition, First Printing.


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Games Thirst – Video Game News, Reviews, Trailers, Wikis And The Official Gamer Drink
Grand Theft Auto V Micheal, Franklin And Trevor Trailers Are A GO!
Posted by: Ernice Gilbert April 30, 2013 in News, PS3, Take-Two, Videos, Xbox 360 13 Comments
It's no wonder Grand Theft Auto V is the most anticipated game this year. The title's new trailers, giving introductions to the game's three main characters: Michael, Franklin and Trevor, have been meticulously put together. Go quench your thirst below the break.
Grand Theft Auto V sees a release September 17th on PS3 and Xbox 360.
Grand Theft Auto V gtav michael. franklin. trevor 2013-04-30
Tagged with: Grand Theft Auto V gtav michael. franklin. trevor
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Feast Your Eyes On These Brand New Grand Theft Auto V Screenshots
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Three Grand Theft Auto V Trailer On April 30th
CAN NOT WAIT FOR THIS GAME!
ernicegilbert
Agreed SMOGE!!! It's looking awesome!!!!!
Man, I just watched this trailer 5 times in a row, I'm really excited about this!
It's looking hot, Wolf!!!!
MUST BUY!!!! Rockstar is…just WOW!!!!
Yeah. Really freaking amazing stuff there. Plain and simple!
Oh, it is!
It is two thing. First: Hot, and second: Preordered.
Haha! LOVE IT! They really nailed that trailer, didn't they? How do you feel about the Call of Duty: Ghosts reveal?
I really can't wait to see some action and what it is all about. I'm happy to see Infinity Ward try something a little bit more ambitious. Usually Treyarch are the ones that try ambitious stuff with Call of Duty, and IW stay in that "Standard Modern Military Shooter" safe zone. Now it looks like they are trying something more… dark. Just with the "Mask" trailer they reveiled, we can clearly see they are up to something unusual.
I am really looking forward to the reveil they announced on May 21th.
What about you, bro?
Same here man. And I'm also rooting for them, you know? Especially after all the things they've been through. The teaser was good – and like you said, it looks like a complete breakaway from the Modern Warfare games.
Plus I'm liking the fact that finally, Call of Duty will run on a brand new engine. It's something I said they would have done: create a new engine when next gen comes about, and not at the end of the former, when things were about to change anyway. But yeah, I'm definitely looking forward to see some changes in Call of Duty.
I'm also really happy they got a new engine, though I have some fear about it. I think that there is chances that the hardcore COD fans, the ones that play every single COD games, and not a lot of other games, won't enjoy the new engine as much. COD has that unique "feel" to it, and a lot of the community complained when Black Ops (1) came out, as it did not feel COD enough, even though it was on the same engine and was pretty much the same recipe.
Now with a new engine, I don't know how much similar they'll make it feel compared to the Modern Warfare CODs, but I fear that some people might have a hard time trying to swallow the new changes.
Because let's face it, COD's hardcore community do not really want changes, or else they would've stoped playing COD 3 years ago.
Well this is just some thoughts, I could be wrong, and I actually hope I am. CODs are great games and really brings a lot of people in the world of video games, which can't be a bad thing.
"CODs are great games and really brings a lot of people in the world of video games, which can't be a bad thing."
Exactly. I've never been on the COD hate bandwagon at all. And you're right about the new engine. I thought of the same thing: 'will it play the same?' Will the new engine retain that unique Call of Duty formula?' In essence, like you said, Wolf, will it be Call of Duty enough?
It's a risky move, yes. Here's to hoping Infinity Ward pulls this off seamlessly. I'm looking forward to May 21st. And big move by Microsoft, too. May 21st is going to be interesting.
Yes, a lot of interesting stuff is happening on that date, I'm really looking forward to that!
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redpajama_set_name: RedPajamaCommonCrawl


WTF A Ferrari Sergio spotted in the wild! Nobody was expecting this to happen but @lifeofferrari actually brought out this super rare beast for a nice Sunday drive! This one is different from the other 5 because it has a LaFerrari center console and the car itself is based on a 458 Speciale Aperta which is worth a lot more $$$ than the rest!
I'd like the car a lot better if the headlights didn't connect in the middle and were just regular headlights.
wow, you've changed my mind about this car, i actually like it now.
this colour and this angle - just wow!


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New Merchants to Join West 7TH Development
FORT WORTH, Texas (July 16, 2013) – Cypress Equities companies*, the developers of West 7th, announced today that Brewsters Burger Bar and Chiro One Wellness Centers have signed leases to occupy space at the vibrant mixed-use development located at the intersection of West Seventh Street and University Drive.
Brewsters Burger Bar will open a 2,969-sqare-foot location on Crockett Street across the street from LA Fitness. Brewsters will be a unique draft house and burger bar specializing in a quick, affordable lunch for busy professionals, while also serving as a leisurely dinner spot and late-night gathering place for residents of and visitors to Fort Worth's arts district. Brewsters will feature an exciting happy hour and a full bar offering as many as 60 craft beers on tap. Designed by The Duncan Design Group of Dallas, Brewsters will have a classic pub atmosphere with wood, leather and brick. The setting will be inviting, modern and comfortable.
Brewsters will be operated by Steve Brown of the BPSB Corporation. Brown brings more than 35 years of restaurant expertise to this venture. He also opened Esparza's Restaurante Mexicano in historic downtown Grapevine in 1985 and Guero's Mexican Grill in Valley Ranch in 1997. Brewsters Burger Bar is slated to open in December 2013.
Roger Smeltzer with Vision Commercial Real Estate represented Brewsters Burger Bar while Perren Gasc of Centennial Retail Services represented the landlord.
Founded in 1992 with the sole purpose of educating families and individuals to lead extraordinary lives of health and wellness, Chiro One Wellness Centers offers affordable chiropractic care to all who seek it. At the organization's 78 locations in Illinois, Kentucky and Texas, and through free wellness programming, Chiro One shares how an optimal functioning spine and nervous system can allow everyone to experience incredible health.
The 2,563-square-foot wellness center will be situated between Moda Aveda SalonSpa and The Boardroom Salon for Men on Seventh Street. This will mark Chiro One's tenth DFW metroplex location and is slated to open in the fourth quarter of this year.
Travis Ewert with Colliers International represented Chiro One Wellness Centers while Karly Kilroy of Cypress Equities represented the landlord.
"We are excited to have both Brewsters Burger Bar and Chiro One Wellness Centers join the dynamic merchant roster at West 7th," stated Michael Wheat, executive vice president and director of leasing for Cypress Equities, the developer of West 7th. "These additions further diversify the expanding customer offerings and amenities available at West 7th."
West 7th is a strategic blend of pedestrian-friendly urban elements positioned in a mixed-use community offering retail, entertainment, office and residential. The 13-acre development is located on Seventh Street and University Drive near the Fort Worth business and cultural districts. Its retail and office components are being developed by a Cypress Equities company* and the residential component by Columbus Realty Partners, LTD. To learn more about the West 7th development, please visit www.West-7th.com.
About Cypress Equities
Cypress Equities* (Cypress) was founded in 1995 and has since established a national reputation synonymous with the premier development, operation and management of destination-class retail and mixed-use properties throughout the U.S. Historically, Cypress has developed and acquired more than 14 million square feet and currently is developing and managing a portfolio of more than 8.5 million square feet of retail, office, residential and automotive real estate. Today, there are six Cypress Equities offices throughout the U.S., including Dallas (headquarters), New York, San Francisco, Chicago, Atlanta and Fort Lauderdale. Visit www.cypressequities.com for more information.
*The Cypress Equities name, logo and other marks are trademarks and service marks being licensed to independent operating companies by CE Brands, LLC. Any particular obligation, service or product is the sole responsibility of the specific entity that incurs such obligation or supplies such service or product.
Please direct all inquiries to Crockett Row Marketing.
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Crockett Row at West 7th
Crockett Row at West 7th is a vibrant destination to eat, drink, shop and explore in the heart of the Cultural District in Fort Worth. Encompassing five walkable blocks of fashion and accessory boutiques, salons and spas, gourmet and fast-casual restaurants and bars, and a movie theater.


Mikro Msc Berhad ("Mikro"/Company) aims to establish a uniform policy relating to the acceptance of gifts, including gratuities or rewards. This policy applies to all elected and appointed officials, as well as all employees of Mikro.
"Gift" means any bestowal of money, any item of value, service, loan, thing or promise, discount or rebate for which something of equal or greater value is not exchanged. Payments for travel, entertainment and food are gifts.
ii) This policy includes vendor or potential vendor or supplier-provided food, beverages, meals, or entertainment that is not extended to any other employees.
iii) This policy includes any business courtesy offered such as a product discount or any other benefit if the benefit is not extended to all employees.
vi) May accept handmade items by and from children under age 16.
ii) If the gift is anonymous, the recipient must deliver the gift to the management, who will convey the gift to a charitable organization.
Any employee who requires assistance with this policy should first consult with their immediate superior. Should further advice be required, the employee should contact the Finance and Admin Manager.


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From right, Air Force Sergeant's Association International President retired Chief Master Sgt. Daniel Yeomans, Chief Master Sgt. of the Air Force James A. Cody and Air Force Association President retired Gen. Craig McKinley lay a Memorial Day wreath during a ceremony held May 26, 2014, at the Air Force Memorial in Arlington, Va. Cody provided the keynote speech, remarking that for him Memorial Day is a day to remember the freedom that we all share because of the fortitude shown by of our fallen comrades in fighting and standing their ground. (U.S. Air Force photo/Jim Varhegyi)
From right, Air Force Sergeant's Association International President retired Chief Master Sgt. Daniel Yeomans, Chief Master Sgt. of the Air Force James A. Cody and Air Force Association President retired Gen. Craig McKinley lay a Memorial Day wreath during a ceremony held May 26, 2014, at the Air Force Memorial in Arlington, Va. Cody provided the keynote speech, remarking that for him, on Memorial Day, the three spires of the memorial stood for freedom, fortitude and our fallen. Cody then told the crowd that today, and everyday, our fallen are with us in our stories and our memories, and they give us cause to wave our flags. (U.S. Air Force photo/Jim Varhegyi)
Chief Master Sgt. of the Air Force James A. Cody provided the keynote speech during a Memorial Day wreath-laying ceremony held May 26, 2014, at the Air Force Memorial at Arlington, Va. Cody remarked that for him, on Memorial Day, the three spires of the memorial stood for freedom, fortitude and our fallen. He went on to say that today is a day to remember the freedom that we all share because of the fortitude shown by of our fallen comrades in fighting and standing their ground. (U.S. Air Force photo/Jim Varhegyi)
Chief Master Sgt. of the Air Force James A. Cody holds his keynote speech during a Memorial Day wreath-laying ceremony May 26, 2014, at the Air Force Memorial, Arlington, Va. Cody remarked that on Memorial Day the three spires of the memorial remind him of the trifecta of freedom, fortitude and our fallen. Cody said that we all enjoy freedom because of the fortitude shown by of our fallen comrades in fighting and standing their ground. (U.S. Air Force photo/Jim Varhegyi)
Chief Master Sgt. of the Air Force James A. Cody provides his keynote speech during a Memorial Day wreath-laying ceremony held May 26, 2014, at the Air Force Memorial in Arlington, Va. Cody remarked that for him on Memorial Day the three spires of the memorial stood for freedom, fortitude and our fallen -- who are still with us in our stories and our memories, and give us cause to wave our flags. (U.S. Air Force photo/Jim Varhegyi)
Chief Master Sgt. of the Air Force James A. Cody speaks during a Memorial Day wreath-laying ceremony held May 26, 2014, at the Air Force Memorial, Arlington, Va. Cody remarked that for him on Memorial Day the three spires of the memorial stood for freedom, fortitude and our fallen -- whose sacrifices give us cause to wave our flags today and in the future. (U.S. Air Force photo/Jim Varhegyi)
Young volunteers representing the East Coast Chapter of the Tuskegee Airmen Inc. participated in a Memorial Day wreath-laying ceremony held May 26, 2014, at the Air Force Memorial in Arlington, Va. Chief Master Sgt. of the Air Force James A. Cody provided the keynote speech remarking that Memorial Day is a day to remember the freedom that we all share because of the fortitude shown by of our fallen service members in fighting and standing their ground. (U.S. Air Force photo/Jim Varhegyi)
Young volunteers representing the East Coast Chapter of the Tuskegee Airmen Inc. participated in a Memorial Day wreath-laying ceremony held May 26, 2014, at the Air Force Memorial, in Arlington, Va. Chief Master Sgt. of the Air Force James A. Cody provided the keynote speech remarking that for him, on Memorial Day, the three spires of the memorial stood for freedom, fortitude and our fallen. He went on to say that today is a day to remember the freedom that we all share because of the fortitude shown by of our fallen comrades in fighting and standing their ground. Cody then told the crowd that today, and everyday, our fallen are with us in our stories and our memories, and they give us cause to wave our flags. (U.S. Air Force photo/Jim Varhegyi)
Capt. Jerry Yellin, a World War II P-51 pilot and the national spokeman for the Spirit of 45 Organization renders honors during a Memorial Day wreath-laying ceremony May 26, 2014, at the Air Force Memorial, Arlington, Va. During his keynote address, Chief Master Sgt. of the Air Force James A. Cody urged audience members to remember the fortitude shown by the nation's fallen in fighting and standing their ground. (U.S. Air Force photo/Jim Varhegyi)
Freedom, fortitude and sacrifice: CMSAF commemorates fallen
WASHINGTON (AFNS) -- Air Force senior leaders and members of the Air Force Association and Air Force Sergeants Association gathered for a Memorial Day service and wreath laying ceremony May 26, 2014, at the Air Force Memorial in Arlington, Va.
During his keynote address, Chief Master Sgt. of the Air Force James A. Cody said that on Memorial Day, for him, the three spires of the memorial stood for freedom, fortitude and our fallen.
He went on to explain that Memorial Day serves a reminder that the freedom we all share was won by fortitude shown by our fallen service members in fighting and standing their ground.
"Today, and everyday, our fallen are with us in our stories and our memories, and they give us cause to wave our flags," Cody said.
Young volunteers representing the East Coast Chapter of the Tuskegee Airmen Inc. participated in the ceremony and displayed old portraits of select World War II veterans in a tribute to their service and sacrifice.
Also in attendance were the Air Force Sergeant's Association International President retired Chief Master Sgt. Daniel Yeomans and Air Force Association President retired Gen. Craig McKinley, who joined Cody in the ceremonial wreath laying.
(Information courtesy of Air Force News Service)
CSAF Memorial Day AFA AFSA Air Force Memorial James A. Cody
GENERAL CRAIG R. MCKINLEY
Gen. Craig R. McKinley serves as the 26th Chief National Guard Bureau and as a member of the Joint Chiefs of Staff. In this capacity, he serves as a military adviser to the President, the Secretary of Defense, the National Security Council and is the Department of Defense's official channel of
CHIEF MASTER SERGEANT OF THE AIR FORCE JAMES A. CODY
Chief Master Sergeant of the Air Force James A. Cody represents the highest enlisted level of leadership, and as such, provides direction for the enlisted force and represents their interests, as appropriate, to the American public, and to those in all levels of government. He serves as the personal


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Lauren Fisher
Sophomore Lauren Fisher, pictured top right, snaps a photo as she chats with friends during quarantine. For Fisher, these conversations were critical towards staying upbeat during the pandemic.
Perspective on priorities
Quarantine provides sophomore Lauren Fisher with the realization that she had been overloading herself with extracurriculars and academics.
Gymnastics. Latin Club. Softball. Future Problem Solving Club. Not to mention, being a full-time student at Jefferson.
For Jefferson sophomore Lauren Fisher, her days before quarantine started were filled with numerous academic and extracurricular activities. But the closing of schools in mid-March interrupted Fisher's busy schedule, allowing her to reflect on her priorities as a student.
When lockdown first started, Fisher found herself FaceTiming her friends for hours into the night. These daily sessions helped disrupt the daily boredom of quarantine.
I don't think I realized that I was unhappy because I was doing all this stuff. I wasn't enjoying interactions with people, or enjoying life."
— Sophomore Lauren Fisher
"I don't know what I would have done if I didn't talk to my friends. There was already so much monotony of the day that seeing any people was so important to not go insane," Fisher said.
As March turned to April and the once seemingly long one-month break from school became a three-month venture into virtual learning, quarantine was an extended period of time that felt like a break. Fisher tried to not burden herself with the guilt of not being efficient and productive.
"I did sometimes freak out that I wasn't being productive enough. But I think you need to go easy on yourself because you can't really regret anything," Fisher said. "There was a lot of stuff going on in the news, and there was so much uncertainty."
Instead of feeling too concerned about her lack of productivity, the pandemic helped Fisher realize that it was okay to have more balance between academics and free time.
"I was really busy during freshman year, and I don't think I realized that I was unhappy because I was doing all this stuff. I wasn't enjoying interactions with people, or enjoying life" Fisher said. "So when I didn't have to have those responsibilities, I realized that I was not myself when I had all [those responsibilities]."
Beaming, Fisher poses for a picture over the summer. Photo courtesy of Lauren Fisher.
Fisher's mentality and the time away from school allowed her to focus her attention on developing other interests and skills.
"I'm a lot more confident and outgoing, in the way that I look at life. I know I found a better balance of activities in school and in life," Fisher said. "I had time to explore things that I enjoyed, like baking and biking."
On March 9, Fisher returned to the Jefferson building for the first time in nearly a year.
"It felt like nothing had changed. It's weird to leave some place for that long and then find it exactly how it was," Fisher said. "Being in the presence of someone else helps me understand things better, and it's really nice to actually talk to your teachers [in person]."
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on November 12, 2018 and modified on November 10, 2018.
One of my favorite things to do is the listen to the ramblings of a person just before they fall asleep.
How do you folks like the new colours? I've gone 100% digital on the strip (using my iPad Pro and my Apple Pencil) and I dig it.


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A Celebration of Life was held on Dec. 28 in the H. Lee House, Lemon Grove, in the heart of the city he loved. John S. (Jack) Durham died peacefully in the early hours of Dec. 12. He was 89. His wife of 69 years, Margaret, was at his side, together with his three daughters and their families. In death, as in life, Jack was the center of attention in the family he adored.
Born on May 29, 1925 at Centerville, Iowa to Ira and Julia Durham, he was the middle child of five. After the untimely death of Jack's older brother in the early 1930s, the Durhams loaded up vehicles and headed west to San Diego. In 1933 they settled on Main Street in Lemon Grove. Jack was 8 years old when Lemon Grove became his territory. He loved it and knew it well—the swimming hole, the rock quarry, fragrant orchards and local sports teams. Bike riding all over town and to and from the lone grammar school. And the fabled games of former childhoods, Run Sheep Run, Kick the Can and Ring-a-levio.
At 14 he became the stock boy at the famous Sonka Bros' General Store on Main Street near the Durham home. For $0.25 an hour, he stacked hay bales, swept the floor, restocked shelves, helped with inventory and climbed the rolling stock ladder to fetch items off high shelves for customers. As he grew older he worked at the nearby lumber mill on Main and North Avenue. He learned why the customer is (almost) always right and why the Sonka brand of diplomacy and geniality opened doors.
In interviews with the Lemon Grove Historical Society, he recalled how much he loved working for Tony Sonka, the head of the store that was "the Wal-Mart of its day," with customers arriving from miles around. After a year's excellent service, Sonka raised his salary to $0.30 cents an hour. Jack also had a paper route. These early experiences, together with assisting in his father's insurance agency, prepared him for life as an entrepreneur.
World War II defined his generation. Like millions of others, he played a part in this greatest American effort. After Pearl Harbor was bombed on Dec. 7, 1941 he left Grossmont High School at 17 to become a radioman in the South Pacific. His naval training took him to Memphis where he met and later married the love of his life, beautiful Margaret Virginia McKinnie. 1940s photographs reveal the elegance and charm she would transmit to her daughters.
Durham was shot down near the island of Chichi-Jima and sustained injuries that would send him home after three months in a Honolulu naval hospital. When pulled out of the water, he begged his rescuers not to tell his mother about his injuries. After all he lied about his age in order to enlist and didn't want to alarm his family. His Purple Heart became a prized possession and his original flight book was never far from reach.
In the post war economic and baby boom, Jack and Margaret started a family, producing three daughters, Kathy, Lori and Gayle. He also joined his father in Durham Insurance Agency, which he would run for 38 years in Lemon Grove. Father and son also started Cinema Dine, an innovative drive-in movie theater on Federal Boulevard. Waiters on roller skates delivered patrons' meals from a kiosk. In a town with a strong (and admired) Japanese immigrant presence, the first feature film shown at Cinema Dine was "Go For Broke," the story of the heroic all-Japanese American 442nd Brigade.
Route 94 in 1956 sliced into Federal Boulevard ending Cinema Dine and dictating a new world for Lemon Grove. Its business district was now a long strip next to an interstate and its major competition was the county's first shopping mall, College Grove.
His businesses provided his "harem" with an idyllic, middle class suburban life style. During vacation breaks the family took cross-country train trips, Sunday rides to watch airplanes and get ice cream, and tours around the county. Their home was filled with music, stemming from his early training as a clarinetist and his participation in the Grossmont High School band. He loved playing his clarinet.
All three daughters grew up to become businesswomen. In Lemon Grove Lori and her husband, Bob Bailey, ran the iconic Food Factory lunch counter for 42 years, retiring in 2014 after throwing the torch to chefs John and Lori Barrios, who renamed it The Bleu Whisk Diner. Gayle Durham's company is Alvarado Pacific Insurance Services with 30 employees, including Kathy Durham.
In retirement he became a volunteer docent on San Diego's Midway Museum and a frequent consultant to the Lemon Grove Historical Society about all things "Grovian." He loved stopping by the Food Factory and holding court in the rear booth. But it was his role as family man that is perhaps his greatest legacy.
He is survived by his wife Margaret, daughters Kathy Clifford (Larry), Lori Bailey (Bob), Gayle Bailey (Steve), four grandchildren including Lori Fentress (Jim), Jeff Bailey, John Clifford (Crystal) and Clint Bailey (Cristina), six great grandchildren, and his sister Mary Brooks.
Donations are suggested for the Lemon Grove Historical Society, P.O. Box 624, Lemon Grove, CA 91946 and Sharp HospiceCare Fund, P. O. Box 1750, La Mesa, CA 91944.


Here is the first Writer's Lounge story ok?
Mario was asleep and snoring like he normally does now. He was dreaming of eating loads of mushrooms and growing big and steping on bowser. Then suddlenly he woke up but he was not really awake. He was sleep walking! Peach was in the Castle Living Room and Mario came in through the door putting his arms forward like a Zombie and saying Ahhhhhh! Peach was not surprised because this happened all the time with Mario lately. Suddenly Yoshi came running through the door and said to Peach that there is something outside witch looks like a portal and someone with a sword is there and it looks like there is a Princess there. Maybe its Daisy though Peach. Peach slaped Mario witch made him wake up and they went outside to find out if it was Daisy or someone they did not know.
Im 10 and not good at spelling btw.
I like the plot, but the first chapter seems a bit... short don't you think?
It's a good setting but for a 10 year old you should have made it better punctuated and made better spelling!
You should know that Witch is Which, how and when to use commas and how and when to use talking marks! Otherwise the school that you go to isn't very good. I learn't how to do all that when i turned 10!
Because it makes the reader understand it faster... it could look like Zelda is saying something and then link is supposed to say something but it's still Zelda who says it!
Also it's a little bit hard to take the story seriously when hardly any work has gone into making it look more presentable!
Correct grammar, punctuation, and spelling make stories easier to read and understand.


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by: b00kll0vrPosted on: April 12, 2022
PS plus in April 2022: new free
What would be a month without PS Plus-Leak? Also in April 2022, the "free" games were published prematurely for the PS4 and PS5 service. Which titles you probably expect, you will learn here.
Spongebob Remake
The gaming highlight in April 2022
These are slay the spire and hood
These are the three games:
SpongeBob SquarePants Rehydrated (PS4)
Slay the Spire (PS4)
Hood: Outlaws and Legends (PS4 / PS5)
Where the leak is published? The lineup was published on the French side Dealabs, where to see a picture of the games. However, it is very likely that the ad will be put offline soon.
Genre: 3D-JUMP 'N' RUN
Release: June 2020
SpongeBob rating: 85
This is what: in rehydrated, remake to the PS2 and Gamecube classic Spongebob SquarePants: Battle for Bikini Bottom awaits you a faithful new edition of the 3D Jump & Run with the world's best sponge.
Due to the colorful levels, however, not only with Spongebob, but also with Sandy and Patrick, who each have their own abilities. You can learn more about the game in the detailed SpongeBob test:
__34 __6
Test: a sponge tasting remake
With Slay The Spire, one of the best deckboards and Roguelikes of recent years awaits you. Do not quit here by the rather getting used to graphic. Be your genre fans, you will hardly find a better game.
Hood: Outlaws & Legends, on the other hand, is a co-op game in which two groups each with four players * compete against each other and perform the perfect robbery. Although the action game has not really convinced with its PVPVE approach in the SpongeBob test, but since the developer has been demonstrated by the developer. At least a look into the game can be worthwhile.
What do you say about the game lineup in April 2022? Do we have SpongeBob fans here?
UncategorizedTags : April, game, GamePro test, Games, Slay, Spire, SpongeBob, Spongebob Remake, SpongeBob SquarePants, testLeave a Comment on PS plus in April 2022: new free
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PERMISSION TO REPUBLISH: This article may be republished in newsletters and on web sites provided attribution is provided to the author, and it appears with the included copyright, resource box and live web site link. Email notice of intent to publish is appreciated but not required: mail to: brent@actionleadership.com Word count: 1600 An extraordinary feature of the human heart is its capacity to be profoundly changed in an instant. Experiences that take place in the blink of an eye can propel individuals to radically alter their behavior and even the course of their lives. Making use of this inherent quality of the heart can boost the effectiveness of your leadership. For it is in the realm of heartfelt words and actions that great leadership results accrue.
For the past 22 years, I've been teaching a process to leaders of all ranks and functions in top companies worldwide, a process that can help you take advantage of the heart's great potential. It's called The Leadership Talk. The Leadership Talk is a way of making deep, emotional connections with the people for the purpose of achieving great results. Specifically, the Leadership Talk motivates people to choose to be your cause leaders. Only cause leaders can achieve great results consistently.
To prompt people to take leadership for your cause, you must develop a special relationship with them. After all, one may do a task and get average results; but to get great results, one should take leadership of that task. Taking on leadership for your cause will require they embrace higher levels of expectations and achievements. So it is not a commitment people will make easily or lightly. Your giving a Leadership Talk -- i.e, saying those things that will motivate the people to help lead your cause –- can take any length of time. I've seen people give a successful Talk in just a few minutes. I've seen people give a series of Talks over days and weeks before their audiences would make the choice. However, because of the heart's extraordinary dynamics, a Leadership Talk can be done in a moment. Here are a few "instant Leadership Talks.
" Note that sometimes no words were involved. Words are not absolutely necessary when it comes to giving Leadership Talks. --Seeing abolitionist William Lloyd Garrison dragged with a rope down a Boston Street by a pro-slavery mob, Wendell Phillips became so outraged that he joined the abolitionist movement and became one of its most effective activists. --When anti-French passions were sweeping England in the late 18th century, Voltaire who had been living in London for several years was set upon by an angry mob. "Hang the Frenchman! Hang him!" shouted the rabble. Voltaire responded, "Men of England! You wish to hang me because I'm French? Isn't NOT BEING BORN ENGLISH PUNISHMENT ENOUGH?" The crowd laughed and cheered and escorted him back to his quarters. --Doug Collins, member of the '72 U. Olympic team that ultimately lost the gold medal on a disputed call to the Soviet Union, describes the dramatic moments at the end of the game. "We're losing by one. The Soviets have the ball. The clock's running out. I hide behind the center, bait a guy into throwing a pass, knock it loose and grab it. A Russian goes under me as I'm going up for the lay-up. I'm KO'd for a second. The coaches run to me. John Bach, one of the assistants, says, 'We gotta get somebody to shoot the fouls." But coach Hank Iba says, 'If Doug can walk, he'll shoot.' That electrified me.
The coach believed in me. I can't even remember feeling any pressure. Three dribbles, spin the ball, toss it in, same as in my backyard. I hit 'em both and got the lead. I didn't know what I was made of until then." --a General Electric client of mine told me this. "I was a young Naval officer reporting with many other new sailors aboard an aircraft carrier. The captain met us in a formation on the flight deck. He shook my hand and went down the line greeting many other sailors.


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Campus buildings include a 50,000 sf library at 290 Cedar Street which holds more than 333,000 volumes, approximately 3,905 serial subscriptions, microforms currently equivalent to 154,000 volumes, audio and video tapes, computer software, and interactive videos. The library also offers an excellent computer lab and study rooms.
A separate administrative building at 225 Cedar Street houses faculty and administrative offices.
The classroom building at 350 Cedar Street was originally built in 1929 as an Elks Club, is historically registered, and a well-known architectural icon. Renovations to this classroom building have provided several large lecture halls as well as seminar space, room for 30 on-campus student organizations, an 1,840 square foot student lounge, individual study rooms, and a computer lab. Students enjoy an on-campus coffee cart, and campus-wide wireless technology.


The creation of a new beer brand can be every bit as democratic as the beverage itself, as seven guys at London advertising agency Karmarama recently proved. The group – comprised of designers, directors and a finance expert – launched Aurelio (Latin for "golden"), the first offering from their new Two Fingers Brewing Co. All profits will go to Prostate Cancer UK.
The septet designed the packaging, logo and promotional materials; the beer itself is made by Sussex brewery Hepworth & Co. and available exclusively through British grocery chain Tesco.
Next up: a cider and stout.


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Cancer Warrior Sharon Osbourne Takes Pet Therapy One Step Further With Adorable Behind the Scenes Footage of Her Pooches
Ultimate Pet Therapy
Sharon Osbourne shared a series of videos of her cute pooches
Osbourne battled colon cancer in 2002 and underwent a preventative double mastectomy in 2012.
Pet therapy can help cancer patients cope during treatment.
Talk show personality Sharon Osbourne, 67, stepped up her pet therapy game and is gracing all of us with adorable videos of her precious pooches. As a colon cancer survivor, Osbourne is always finding ways to appreciate the good things.
In a series of videos, Osbourne gave us a "behind the scenes" look into her special announcement that CBS' The Talk is coming back to our screens. However, setting up for the announcement wasn't necessarily an easy start. In the videos, Osbourne tries to corral her multiple dogs to make the message a lot more adorable, but the pooches clearly were focused on play time.
Related: Pet Therapy: Sharon Osbourne, Colon Cancer Survivor, Introduces The Newest Member of The Osbourne Clan: 'Queen of the House'
"Some more BTS of me trying to wrangle the pups to announce the return of @thetalkcbsit took A LOT of treats and still chaos," Osbourne writes.
Some more BTS of me trying to wrangle the pups to announce the return of @thetalkcbs it took A LOT of treats and still chaos 🤪
A post shared by Sharon Osbourne (@sharonosbourne) on Sep 30, 2020 at 10:01am PDT
Osbourne definitely knows the power of pet therapy, and even after cancer treatment she still takes time to snuggle them as much as possible. Osbourne was diagnosed with colon cancer in 2002 after her husband, Ozzy Osbourne, pushed her to go to the doctor since she hadn't visited one in three years. After the diagnosis, Osbourne underwent surgery, but later was informed that the disease had spread. She then went through chemotherapy treatments and was declared in remission.
Related: 5 Truths Sharon Osbourne Learned From Colon Cancer: 'After You Get Over the Shock and Panic, You Realize How Lucky You Are to Be Alive'
Osbourne's cancer journey didn't stop there. Osbourne went through genetic testing in 2012, and discovered she had a high risk of being diagnosed with ovarian and breast cancer due to her genes. To shut down any possibility of a diagnosis, she underwent a preventative double mastectomy.
The Power of Pet Therapy
There's a lot of information to take in and steps to take during cancer treatment. Plus, there's a lot of stress and anxiety that comes with a diagnosis. It's important to take a moment to appreciate the little things, and pet therapy is the perfect approach.
A number of cancer centers partner with animal foundations to provide dogs that will visit cancer patients during treatment. This helped Richard Marks' bone cancer treatment go by so much quicker. While undergoing chemotherapy, he had to spend several hours at the hospital five days a month and got bored during the process. Luckily, the pooches that visited him made those hours fly by.
Related: "All My Children" Star Cameron Mathison Says Pet Therapy Helps Him Heal After His Surgery For Kidney Cancer
"When I'm doing the chemotherapy and I'm waiting and time's going by and maybe I'm worrying about my numbers or how my treatment is going and all of a sudden a cute little dog goes by, I'm not thinking about those things," Richard tells SurvivorNet. "I'm only thinking about that dog and how that dog is going to feel it in my lap. So that's one of the greatest things. It takes me out of my world. I'm not concerned about me at that moment."
Richard Marks says pet therapy helped distract him during bone cancer treatment
Breast Cancer Survivor Christina Applegate, 49, is Helping Two Sisters Fighting Sickle Cell Disease: "We Want to Save These Girls' Lives"
Actress and Breast Cancer Survivor Julia Louis-Dreyfus Crushed It in 2020-- Beating Cancer & In Demand
Throwback Picture From Colon Cancer Survivor Sharon Osbourne, 68, Says What Many Of Us Are Thinking; Eager for Normalcy In Uncertain Times
Hugh Grant, 60, May Play a Pediatric Oncologist in His New HBO Series "The Undoing" But He's Been a Pancreatic Cancer Advocate for Years
Actors Emily Tyra & Stephanie Bissonnette, Along With Model Pat Cleveland, Tell Us: Keep Moving Forward, Even In Difficult Times
Cancer Warrior Shannen Doherty Shows Off Ping Pong, Wine Challenge, & Friendsgiving Meal Prep Skills With Bestie Sarah Michelle Gellar
Breast Cancer Survivor Christina Applegate, 49, is Helping Two Sisters Fighting Sickle Cell Disease: "We Want to Save These Girls' Lives"
Actress and Breast Cancer Survivor Julia Louis-Dreyfus Crushed It in 2020– Beating Cancer & In Demand


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Petco Pulls Pet Treats From China Suspected Of Killing, Sickening Thousands
Tuesday, January 6th 2015, 1:29 pm
Petco said Monday it has removed all remaining Chinese-made dog and cat treats from its website and stores nationwide because of concerns they have sickened thousands of pets and killed more than 1,000 dogs in the U.S. since 2007.
The U.S. Food and Drug Administration says initial tests have not connected the Chinese jerky and rawhide treats to the illnesses, but the San Diego-based company and its rival PetSmart both vowed in May to ban the snacks.
Petco is the first national pet retailer to pull the treats from its 1,300 stores. Phoenix-based PetSmart Inc. said Monday that it plans to have them off shelves at its roughly 1,300 stores by March.
John Sturm, Petco's vice president of pet nutrition and merchandising, told CBS News in an email that the company has been "actively reducing our China-made assortment and expanding our American-made offerings for several years now."
He also noted that, "while there is no direct, definitive link identified by the FDA between the reported illnesses in cats and dogs and China-made treats, as a trusted source to our customers, we decided pet parents' concerns about the safety of China treats was significant enough to pull these products from our shelves."
The FDA targeted the treats after receiving more than 4,800 complaints of pet illnesses, including the deaths, after pets ate chicken, duck or sweet potato jerky treats from China. Tests have not confirmed any connection, but the agency is still investigating. Meanwhile the number of cases continued to climb, with illness reported in more than 5,600 dogs, 25 cats and 3 humans as of October.
Symptoms may occur within hours or days after eating the treats, the FDA warned, and can include decreased appetite, decreased activity, vomiting, diarrhea (sometimes with blood or mucus), increased water consumption and/or increased urination. In severe cases, pets may be diagnosed with pancreatitis, gastrointestinal bleeding, and kidney failure.
The FDA said it has tested for a wide range of contaminants including Salmonella, pesticides, rodenticides, mold, arsenic, led, antibiotics and other chemicals, but has so far been unable to determine the cause of the illnesses.
Sturm said Petco treats are now made in the U.S. or places such as the Netherlands, New Zealand, Australia and South America. The company risked tens of millions of dollars by changing treat vendors, he said.
News 9 Petco said Monday it has removed all remaining Chinese-made dog and cat treats from its website and stores nationwide.


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Home » Services » Don't delay: Immunize your infant against disease
Don't delay: Immunize your infant against disease
April 23, 2018 Providence Health Team
Infant Immunization Week is a good time to reflect on the value of immunizations
Check to make sure your baby is up to date on vaccinations
Babies born in the United States are more likely to be vaccinated against an array of preventable diseases than babies born in other parts of the world. And yet, even in America, some babies are going unprotected, and that poses a health risk - not only to them, but to the population at large.
Immunizations have eradicated, or nearly eradicated, diseases like smallpox and polio. But in areas where vaccinations drop below a certain threshold, diseases that could have been eliminated still can cause illness and death.
So far in 2018, for example, 13 people have been reported with measles, according to the U.S. Centers for Disease Control and Prevention (CDC). Last year, 118 people were reported with measles. Measles doesn't threaten most of us because we receive vaccinations against the disease.
An investigation of a 2017 measles outbreak among very young children in Minnesota found that most of the sufferers were unvaccinated. "The low vaccination rate resulted in a community highly susceptible to measles," the CDC concluded.
Infant Immunization Week is a good time to reflect on the value of immunizations and check to make sure your baby is up to date on vaccinations. Providence can help you record your children's vaccinations and see what's due next with the vaccine tracker on the Circle by Providence app.
Worldwide, one in 10 children had no vaccinations in 2016, according to a survey by the World Health Organization (WHO). And even in cases in which children were vaccinated, millions did not receive the full, multidose immunization treatment.
WHO officials said many of the children live in places with very limited health care systems.
"If we are to raise the bar on global immunization coverage, health services must reach the unreached," said Dr. Jean-Marie Okwo-Bele, the agency's director of immunization, vaccines and biologicals. "Every contact with the health system must be seen as an opportunity to immunize."
While access to health care creates barriers to immunization in the developing world, other concerns may interfere with vaccinations in countries like the United States. Some have suggested, for example, that vaccines can cause autism in children. But this is not true. As the CDC puts it, emphatically, there is no link between vaccines and autism.
Immunizations are also safe and effective when given to babies who are born pre-term, or are underweight, notes the American Academy of Pediatrics.
The Circle App
New moms find themselves navigating a world full of warnings and dangers to their little ones. It can be overwhelming to keep up with - and minimize - all the daily hazards, from infant diets to sleep positions.
To help moms keep track of their children's scheduled and completed vaccinations and get answers to other pregnancy and parenting questions, Providence has developed a free, easily downloadable app that includes a vaccine tracker feature. It follows the CDC-recommended guidelines for immunizations for diseases from hepatitis to flu.
The Circle by Providence app is available for Apple and Android devices and may be downloaded from the Apple store and on Google Play.
Check out our infographic about why Providence supports child vaccinations. If you have questions or concerns about vaccinating your child, discuss it with your health care provider. You can find a Providence St. Joseph Health provider convenient located near you by looking in our online directory.
What's best to eat for healthy breastfeeding?
The foods and beverages you, and your baby, need
A cardiologist speaks: How to think about heart medications
What you know about your heart medicines can help you better understand the role they play in your health care
Skin tags are an irritant but should be treated with respect
It's wise to mention to your health care provider the growth of skin tags.
You caught your teen vaping. Now what?
Prepare yourself to have an open and honest discussion with your child about the risks of vaping.
Breast is best for mom's heart health?
Research indicates that women who breastfeed may have a healthier cardiovascular system
All eyes on sports eye protection
Wearing eye guards with shatterproof polycarbonate lenses when playing sports significantly reduces the risk of eye injury or blindness.
Are seasonal allergies making you miserable?
Check out these six allergy hacks for women with spring sniffles and allergic shiners.
Grandparents can provide crucial support within the family
Grandparents can provide the ballast some families need in navigating the choppy waters of parenthood.
How to help protect your child from AFM
A recent outbreak sparked concerns over acute flaccid myelitis, a disease that can cause paralysis if unchecked.
Children's health checklist, powered by Circle
The Circle by Providence app has answers, tools and resources to help keep your kids healthy year-round.
How to prepare your daughter for her first period
A pediatrician gives some practical advice on how to make menstruation less of a mystery for tweens and teens.
9 ways to build healthy immune systems in children
In a world filled with germs, parents wonder how to best protect their children from illness and disease.
Hold the phone? How to tell when your tween is ready for one
Parents who are thinking of getting their child a smartphone need to do some advance planning to make sure the whole family is ready for this new responsibility.
Raising connected kids in an age of disconnection
Family therapist Kathryn Anderson discusses how parents can raise connected kids by focusing on the values of community, positive relationships, and the ability to be vulnerable.


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Q: LINQ Query to get grouping based on range of calculated values I have a sql query that I use to get a distribution for measurements into multiple Bins:
SELECT FLOOR(Value / @Step) * @Step AS Bin,
       COUNT(*) AS Cnt FROM Measurements WHERE (StepId = @StepId)
       GROUP BY Bin ORDER BY Bin

where
Value = value of measurements returned based on StepId (primary key in measurements table)
Step = actually the number of groups(Bins in distribution).
How can I use LINQ and create grouping based on dynamically created range of values.
Please advice.

A: I think this is what you're after:
double step = 100;
var stepId = 1;

from m in context.Measurements
where m.StepId == stepId;
let bin = (Math.Floor(c.Value / step)) * step
orderby bin
group m by bin into x
select new { x.Key, Count = x.Count() }

You can even omit the Floor function because the "/" operator on integers has the same function in SQL.

redpajama_set_name: RedPajamaStackExchange


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