A multiple element integrated circuit trench cell having at least one vertical field effect transistor (FET) in a wall of a trench in a semiconductor substrate. The cell further comprises a central load device within the trench which is electrically connected to the vertical FET. The central load device may be an active load device, such as another field effect transistor, or a passive load device, such as a resistor. Additionally, a further FET may be present in another wall of the trench or in a lateral orientation adjacent the trench in the semiconductor surface. Two of these multiple element trench cells may be interconnected in various configurations to form conventional static random access memory (SRAM) cells.
The invention relates to integrated circuit elements formed in trench structures and particularly relates to trench integrated circuits where at least one transistor is formed in the trench.
As the integrated circuit industry has explored ways of packing more circuits onto a given semiconductor substrate, more effort has been devoted to not only orienting the various devices in a planar fashion along the surface of the substrate, but also to orienting the devices vertically either by building the devices up from the substrate surface or by burying the devices in trenches formed within the face of the semiconductor body.
For example, a number of schemes for isolating customary planar devices with trench isolation regions are now known. Trench capacitors are also being employed on a commercial basis on the largest memory chips, such as 1-Mbit and 4-Mbit DRAMs.
Trench-like transistors have been employed in various forms. One of the earliest forms of a "trench-type" transistor uses various layers of semiconductive material to form a stack of a source/drain region covered by a layer that serves as a channel region and a top layer that serves as the other source/drain region. A groove or trench is cut through this stack. The groove or trench is coated or covered with a thin dielectric material which serves as the gate dielectric, and the remainder of the trench is filled with a conductive material plug which serves as a gate.
Other configurations employ a shallower trench-type structure or V-shaped groove where the trench or groove not only is coated or covered with a thin dielectric layer which serves as the gate dielectric, but which dielectric is further coated with a thin layer of conductive material to form the gate electrode; at least thin relative to the plug-type gate configurations. Also of interest in relationship to these types of structures are V-MOS devices with self-aligned multiple electrodes. Vertical CMOS transistors that are built up from the surface of the semiconductor wafer rather than buried into the substrate are also known, along with vertical FETs built into trenches where the gate is a thin layer inside the trench separated from another gate within the same trench by some sort of structure. Other proposed vertical FETs include a structure where a trench contains a cylindrical gate and one source/drain is positioned at the bottom of the trench with its contact running through the middle of the cylindrical gate. Also being investigated are trench-type structures which incorporate both transistors and capacitors into the trenches in some manner.
From the above brief history, it is noted that more complex devices are being designed for trench manufacture. As noted, the present challenge for trench technology involves placing more than one device in the same trench, such as a transistor and other element to form a dynamic or static random access memory (DRAM or SRAM) memory cell.
Nevertheless, as trench technology is still developing, a need exists for additional trench structures, particularly of the newer, multiple device type, so that the best alternatives may be made available and considered in the fabrication of extremely high density integrated circuits. Very few of the proposed trench structures have actually been implemented in commercial integrated circuit chips. There is a need for future SRAM cells employing the new trench technologies, particularly those which provide a low soft error rate (SER).
Accordingly, it is an object of the present invention to provide a memory cell for a SRAM employing multiple elements, which may be transistors.
Another object of the invention is to provide a multiple element SRAM cell capable of having either an active or a passive load formed therein.
It is another object of the present invention to provide a multiple element trench SRAM cell that minimizes substrate surface area and the soft error rate of the memory of which it is a part.
Still another object of the present invention is to provide a vertical trench transistor cell requiring no extra isolation space between the elements therein.
In carrying out these and other objects of the invention, there is provided, in one form, an integrated circuit cell formed in a substrate with a trench, when the trench has at least one vertical wall, and a bottom floor, where the vertical wall has a top portion. The cell also has at least one field effect transistor (FET) in the vertical wall, wherein the FET has two source/drain regions, one near the top portion of the wall and one in the bottom floor of the trench. The FET also has a gate region along the wall. The cell also contains a central load device within the trench, where the central load device has top and bottom contacts, wherein the bottom contact of the load device is electrically connected to the FET in the vertical wall.
FIG. 15 is an approximate, schematic overhead layout of two cells of the embodiment shown in FIG. 13 and interconnected as shown in FIG. 14.
It will be appreciated that the cross-section illustrations of the invention are not to scale, and that often the vertical proportions are exaggerated relative to the horizontal proportions for clarity.
Shown in FIG. 1 is a cross-section of one embodiment of the cell 10 of this invention that may be employed in very large scale integration (VLSI) or ultra large scale integration (ULSI) circuit SRAMs or other circuits. The cell 10 is fabricated in a semiconductor substrate 12, which may be, but is not limited to, monocrystalline silicon or other suitable material. Isolation regions 16 are provided to surround the active regions where the cell 10 resides.
Semiconductor substrate 12 will be taken in this description to be p- doped, although it will be appreciated that the substrate may be of the opposite conductivity type, and that the other doped semiconductor material regions may also be reversed. The substrate 12 has a trench 18 therein which has at least two walls 17 and 19 and a bottom floor 21. The cell 10 has at least two field effect transistors (FETs). First FET 46 has a source/drain region 26 near the top portion of wall 17 and a drain/source region 30 in the bottom floor 21 of trench 18, separated by a channel 48. Over channel 48 is thin gate dielectric layer 20 which in turn is covered by gate 22.
Second FET 50 has drain/source region 30 in common with FET 46 and another source/drain region 28 separated from drain/source region 30 by channel 52. Channel 52 is covered by thin gate dielectric layer 20' and the FET 50 gate is 22'. As will be explained during the process flow description, the layers forming gates 22 and 22' and dielectric layers 20 and 20' are originally one and are etched apart during processing to provide contact for the third FET 54.
Third FET 54 functions as the load on the cell 10 herein and has source/drain region 42 at the top of the cell 10 separated from drain/source region 44 at the bottom 21 of the cell 10, separated by channel 40. The gate dielectric for cylindrically-shaped load FET 54 is thin gate dielectric layer 36 under which is gate electrode 34. Note that drain/source region 44 is directly connected to gate 34 as well as drain/source region 30 of FETs 46 and 50.
The construction of the cell 10 in FIG. 1 will now be discussed. Shown in FIG. 4 is an early step in the fabrication of the multiple transistor cell 10 of the invention, particularly the embodiment shown in cross-section in FIG. 1. The fabrication process begins by providing a semiconductor substrate 12 having a surface 14 into which are provided isolation regions 16 surrounding the active areas of the cell 10 to isolate the various cells 10 from each other. The isolation structures 16 may be silicon oxide, silicon nitride, undoped polysilicon or combinations thereof, or other suitable material. Further, the isolation structures 16 may be provided by any conventional process, such as local oxidation of silicon (LOCOS), sealed interface local oxidation (SILO), or by trench isolation, etc. If trench isolation is employed, as is recommended since the cell will also be built into a trench, the trench should be about the same depth, or about 3 microns deep and approximately 0.5 to 1 micron wide.
A trench 18 is etched via generally anisotropic etch techniques, such as plasma etching or reactive ion etching (RIE) in the surface 14 of substrate 12. It is recommended that the etch process to form trench 18 be one which rounds both the top and bottom corners of the trench 18 to facilitate conformal layer coverage. The trench should have at least two walls 17 and 19, and a bottom floor 21. Although the trench may be of any dimensions or proportions, one size might be a trench approximately 2 to 3 microns deep by about 2.0 to 3.0 microns wide. The first layer to be formed is a first thin gate dielectric layer 20 which may be silicon dioxide, silicon nitride or a combination of the two, such as an oxide-nitride-oxide (ONO) sandwich. Next, a conductive material layer 22, such as doped polycrystalline silicon (polysilicon or poly), a metal or metal silicide is conformally provided over dielectric layer 20. For the purposes of this example, it will be assumed that this first conductive material layer is in situ doped polysilicon of n+ conductivity type.
Layers 20 and 22 are patterned and etched to provide openings for forming source/drain regions, and a thin pad dielectric 24 such as silicon dioxide is provided if the source/drain regions are to be incorporated by ion implantation as illustrated in FIG. 5. The ion implantation may be performed conventionally. Since n+ source/drain regions are to be formed, phosphorus or arsenic, in elemental or compound form, may be used. The n+ source/drain regions formed include regions 26 and 28 near the top portions of walls 17 and 19 respectively, and drain/source region 30 in the bottom floor 21 of the trench 18. Note that regions 26, 28 and 30 may be self-aligned to gate layer 22. Typically, the implanted impurities should be annealed to fully form source/drain regions 26, 28 and 30.
Next, an oxidation is performed to provide thick dielectric isolation layer 32, as shown in FIG. 6. This layer may be formed on top of the thin ion implantation pad 24, or may be provided after the pad 24 is removed by some conventional etching means. Thick dielectric isolation region 32 may again be silicon dioxide, silicon nitride, combinations thereof, etc. This region 32 should be patterned at the bottom of the trench to enable contact to drain/source region 30, and then second conductive material layer 34 is formed to give the structure shown in FIG. 6. Second conductive material layer 34 may be formed of any of the materials suggested for first conductive material layer 22. For the example being discussed, second conductive material layer 34 is considered to be n+ polysilicon that is deposited by chemical vapor deposition (CVD). This process is known to give a conformal layer.
Next, as shown in FIG. 7, a second thin gate dielectric layer 36, such as silicon dioxide, is placed over the second conductive material layer 34. Second conductive material layer 36 may or may not be etched to a pattern at this point, depending on how the device engineer wishes to isolate it from the rest of the circuit. In any event, both thin gate dielectric layer 36 and second conductive material layer 34 need to be patterned to provide opening 38, as seen in FIG. 7.
The remainder of trench 18 is filled by a semiconductive material layer or plug 40, which may be polysilicon. Refer to FIG. 1. However, in this case, it may be desirable for the plug 40 to be in situ doped pCVD polysilicon since plug 40 will form the channel for the central load device which in this embodiment will be a transistor. A separate layer of CVD in situ doped n+ poly 42 is placed on top of polysilicon plug 40 as one of the source/drain regions 42. The connection to the bottom of plug 40 is provided by an anneal which would diffuse enough impurity from drain/source region 30 and second conductive material layer 34 into the bottom region 44 of plug 40 to make the contact. The conductive materials that formed plug 40 and n+ source/drain region 42 should be patterned and etched to limit it to the trench area. Alternatively, it may be possible to use a plug fill technique and n+ implantation step to form regions 40 and 42 in trench 18 without employing masking and patterning etch steps. Interconnect layers and dielectric layers may be formed and etched at this point and vias or openings to source/drain regions 26 and 28 should be provided. The process up to this point gives the essentially finished cell shown in FIG. 1. Other conventional processing steps, such as providing a passivation layer and interconnection formation, may be performed as needed.
Shown in FIG. 2 is an overhead or layout schematic of the cell 10 in FIG. 1. It will be appreciated that this is only one possible layout and is not an optimized layout, nor is it even a practical one. However, it is provided to illustrate how two cells 10 and 10" might appear and be connected to form a six-transistor SRAM cell 56 where two of the multiple transistor cells 10 and 10" are interconnected. For example, it may be seen that source/drain regions 26 of FETs 46 and 46" are connected to bit lines D and inverse bit line D, respectively. The gates 22 of these FETs 46 and 46" are both connected to the word line. As noted earlier, the other drain/source regions 30 of FETs 46 and 46" are at the bottom of the trench and thus not visible in FIG. 2.
Again, with respect to FETs 50 and 50", one of the source/drain regions thereof 30 is buried and not visible. The other source/drain regions 28 are both connected to Vss, while the gate 22' of FET 50 is connected to the gate 34 of vertical FET 54". Similarly, the gate 22' of FET 50" is connected to the gate 34 of vertical FET 54. Finally, the top source/drain regions 42 of both vertical FETs 54 and 54" are connected to Vcc line as shown in FIG. 2. Shown in FIG. 3 is a schematic circuit diagram of the two multiple transistor cells 10 and 10" in the SRAM cell 56, simplified from FIG. 2. The six transistor SRAM cell 56 is known in the art. However, its particular structural embodiment into two trenches 18 is new. The operation of the six transistor SRAM cell is well known in the art, and not being the subject of the present invention, is omitted herein for brevity. Typically, devices 54 and 54" are load devices and may be other devices besides transistors. For example, in the embodiment of the invention illustrated in cross-section in FIG. 8, these load devices are resistors and not transistors.
Shown in FIG. 8 is another embodiment of the present multiple transistor cell 60 invention in semiconductor substrate 62. Cell 60 has a trench 64 with at least two walls 66 and 68, which in turn bear first FET 70 and second FET 72, respectively. FET 70 has source/drain region 74 in the top portion of wall 66. This n+ source/drain region 74 may be a layer in the surface of substrate 62 that has been formed in or added thereto. The other drain/source region 76 may be a buried layer, or other type of layer formed by conventional means. The FET 70 source/drain regions 74 and 76 are separated by channel 78. Channel 78 is covered by thin dielectric layer 80 (analogous to layer 20 in FIG. 1) over which is positioned the gate electrode 82 for FET 70.
Similarly, second FET 72 has a source/drain region 84 in the substrate 62 surface near the top portion of wall 68 which is separated from the buried drain/source region 76 by channel 86. The channel 86 is covered by thin gate dielectric 80', which is in turn covered by gate electrode 2'. The gate electrodes 82 and 82' are separated from interconnect region 96 by means of thick dielectric layer 88. Source/drain region 84, drain/source region 76 and source/drain region 74 may be formed by impurity introduction in a manner like that used in the embodiment of FIG. 1, for example, by ion implantation or diffusion.
Another feature apparent in the embodiment of FIG. 8 is the presence of another layer of polysilicon 96 somewhat analogous to second conductive material layer 34 in the embodiment of FIG. 1. In the adaptation of this cell 60 to the circuit in FIG. 9 as will be described later, it becomes apparent that there is a need for a means to connect resistor contact 76 with the gate 82 of a transistor 72 of an adjacent cell 60". This layer 96 facilitates that connection. Thus, it is apparent that dielectric layer 88 should also be present and that there should be a dielectric layer 98 to isolate the bulk of resistor 90 from this second conductive layer 96. Dielectric layer 88 should be at least thick enough so that current flow in conductor 96 does not create sufficient field strength in channels 78 or 86 to induce carrier flow in FETs 70 and 72, respectively.
In the present embodiment shown in FIG. 8, load device 90 is a resistor formed by n-doped polysilicon plug 92 between drain/source connection 76 and top n+ electrode 94, which is connected to Vcc. Source/drain region 74 is connected to bit lines or data lines D and inverse D, while source/drain region 84 is connected to Vss. It will be appreciated by those skilled in the art that the embodiment of FIG. 8 can be made according to the processes described for the embodiment of FIG. 1.
Shown in FIG. 9 is a schematic circuit diagram of how two of the multiple transistor cells 60 and 60" may be interconnected to form a four-transistor, two-resistor SRAM cell. Again, the particular circuit shown in FIG. 9 is well known in the art, although its structural implementation herein is new. Similarly to the discussion of FIG. 3, source/drain 74 of cell 60 is connected to bit line D while source/drain 74 of cell 60" is connected to inverse bit line D. The other source/drain regions of the cells are connected to the gates of the other transistors of the opposite cells; drain/source region 76 of cell 60 is connected via conductive layer 96 to gate 82' of FET 72", and drain/source region 76 of cell 60" is connected via conductive layer 96 to gate 88 of FET 72. Source/drains 76 of both cells 60 and 60" are, of course, also connected to the bottom contact of resistors 90 and 90" and serve as one source/drain region for transistors 72 and 72", respectively. Source/drain regions 84 of transistors 72 and 72" are both connected to Vss, while the top contacts 94 of resistors 90 and 90" are both connected to Vcc.
Shown in FIG. 10 is still another embodiment of the present invention, a VLSI or ULSI memory cell 100 using a polysilicon resistor load buried in a trench structure on a p- wafer with a n+ buried layer 102.
In this embodiment the cell comprises two FETs, a lateral FET 106 and a vertical FET 108 in the vertical wall 110 of trench 112 which also houses the load device 114, which in the case illustrated in FIG. 10 is a passive load device such as a resistor. Lateral FET 106 has source/drain region 116 and drain/source region 118, the latter of which is situated in the surface of p- layer 104 near the top portion of wall 110. Source/drain regions 116 and 118 are spaced apart by channel 120 which is covered by thin gate dielectric 122 in turn covered by gate electrode 124.
Vertical FET 108 has drain/source region 118 in common with lateral FET 106, as well as source/drain region 102 which is provided as an n+ buried layer. Source/drain regions 118 and 102 are separated by channel 126 in the wall 110 of trench 112. The channel 126 and trench wall 110 are covered by thin gate dielectric layer 128, which is in turn covered by gate electrode 130. Unlike the other embodiments discussed so far, gate dielectric layer 128 and conductive layer 130 are continuous around the shape of the trench and may be cylindrical or box-shaped. Thus, the isolation regions 16 should be spaced apart from the trench 112 on all sides, as shown in FIG. 12, so that current can move around the cell.
Further, the central load device 114 is a resistor comprising a lightly doped n- polysilicon plug 132 capped by a n+ doped polysilicon contact 134. The bottom of resistor 114 contacts doped polysilicon interconnect layer 136 which in turn contacts n+ drain/source region 118 previously discussed. Interconnect layer 136 is insulated from the bulk of resistor 114 resistive polysilicon plug 132 by dielectric layer 138 and from vertical FET 108 gate 130 by dielectric layer 140. As with the other alternate embodiments of the invention, the processes and materials used to form the cell 100 in FIG. 10 are similar to those discussed with regard to FIGS. 4 through 7 and 1. However, it should be noted that the source/drain region 116 and drain/source region 118 in the FIG. 10 structure may be formed by self-aligned polysilicon gate processes, rather than by providing a photomask and pattern etching. It will be seen that self-aligned processes may also be used in the cells depicted in FIGS. 13 and 16, subsequently discussed.
However, as might be expected, the cell 100 is configured somewhat differently in its layout and circuit diagram. Shown in FIG. 11 is the same four-transistor, two-resistor SRAM cell 142 shown in FIG. 9. However, in FIG. 11, lateral transistors 106 and 106" serve the functions of transistors 70 and 70", respectively, in the FIG. 9 circuit. Vertical transistors 108 and 108" in the FIG. 11 circuit serve the function of vertical FETs 72 and 72" of the FIG. 9 circuit; while resistors 114 and 114" of the FIG. 11 circuit serve the function of resistors 90 and 90" in the FIG. 9 circuit. Since this basic circuit has been discussed previously in detail, the present brief discussion will suffice for FIG. 11. Again the operation of SRAM cell 142 is well known in the art, since the circuit as depicted in FIG. 11 is not new, though its structural implementation is.
Shown in FIG. 12 is a rough, schematic overhead layout of two cells 100 and 100" of the embodiment shown in FIG. 10 and interconnected as shown in FIG. 11. The same reference numerals used in FIGS. 10 and 11 are used in FIG. 12 for consistency and clarity between views. As with the layout shown in FIG. 2, it will be appreciated that the layout of FIG. 12 is not an optimized layout. For example, from FIG. 12 it is apparent that drain/source regions 118 could be positioned closer to trench 112 within the active area; and further that the isolation region 16 on the right side of cells 100 and 100" may be positioned appreciably closer to trench wall 110.
Briefly, the interconnections discussed above with respect to FIG. 11 will be reviewed with reference to FIG. 12. Note that source/drain region 116 of FET 106 is connected to bit line D, while source/drain region 116 of FET 106" is connected to complementary bit line D. The gates 124 for both FETs 106 and 106" are integral with the word line (which may, of course, be narrower than depicted). Drain/source region 118 of FET 106 is connected to interconnection conductive layer 136 of cell 100, which is in turn connected to gate electrode 130 of vertical FET 108" of cell 100". Similarly, drain/source region 118 of lateral FET 106", which is also a source/drain region for vertical FET 108", is connected to interconnection conductive layer 138 of cell 100", which in turn is connected to the gate electrode 130 of companion FET 108 of cell 100. Interconnection conductive layers 136 of both cells 100 and 100" are also connected to their respective load devices 114, the other ends of which are connected to common Vcc. The other source/drain regions 102 of FETs 108 of both cells 100 and 100" are the common n+ buried layer, which is connected to Vss.
Shown in FIG. 13 is multiple transistor cell 144 which is similar to cell 100 depicted in FIG. 10, except that in this case the central load device 114 is a vertical FET 146. Most of the elements of cell 144 are similar to those of cell 100 and the reference numerals used are the same; these elements will not be discussed again for the sake of brevity. Second vertical FET 146 has a bottom source/drain region 148 and a top source/drain region 150, both regions 148 and 150 being n+ doped and separated by channel 152 which is p- doped. Elements 148, 150 and 152 may be any suitable semiconductor material, such as polycrystalline silicon. The channel 152 is surrounded by thin gate dielectric layer 156, which in turn is surrounded by gate electrode 158, which again may be n+ doped polysilicon. As is apparent, gate electrode 158 is directly connected to bottom source/drain region 148. Further, gate electrode 158 not only is the gate electrode for second vertical FET 146, but is also the gate electrode for first vertical FET 108.
These differences in interconnections of the circuit elements prevent the utilization of cells 144 of FIG. 13 in the six-transistor SRAM cell circuit 56 of FIG. 3. Instead, when two multiple transistor cells 144 and 144" are interconnected to form the circuit of an SRAM cell 160, the circuit appears as shown in FIG. 14. Again the operation and function of this circuit is well known in the art, although the structure of the cells 144 and 144" is new.
A rough, schematic layout of the six-transistor SRAM cell of FIG. 14 utilizing the multiple-component cells 144 and 144" of FIG. 13 is shown in FIG. 15. It will again be appreciated that the cells may not be laid out to best advantage with respect to space utilization. Nevertheless, it is expected that FIG. 15 may aid the reader in understanding the cells of FIG. 13, and thus, common reference numerals are used.
Thus, the multiple-component trench cells of the invention provide new structures for integrated circuit devices, particularly memories such as SRAMs. These cells require a minimum of lateral silicon area since they are built into the substrate. The soft error rate caused by stray alpha particles erroneously reading and writing wrong information into the cell is minimized since these trench cell structures offer possibilities of increasing the coupling capacitances of critical cell nodes and decreasing their junction area.
a central load device within the trench, wherein the central load device is an active load device having top and bottom contacts, wherein the bottom contact of the load device is electrically connected to the FET in the vertical wall.
2. The integrated circuit trench cell of claim 1, wherein the gate region and the central load device contain doped polycrystalline silicon.
3. The integrated circuit trench cell of claim 1 wherein the active load device is a load field effect transistor.
4. The integrated circuit trench cell of claim 3 wherein the load FET comprises a central vertical region having a top source/drain region, a bottom source/drain region, a channel region between the top and bottom source/drain regions, a gate dielectric covering the channel region, and a gate electrode at least partially covering the gate dielectric and oriented across the gate dielectric from the channel region, wherein the bottom source/drain region is in contact with the source/drain region in the bottom floor of the trench.
5. The integrated circuit trench cell of claim 1 where the source/drain region in the bottom floor of the trench consists of a semiconductor element selected from the group consisting of a doped semiconductor buried layer or a doped semiconductor wafer.
6. The integrated circuit trench cell of claim 1 wherein a channel is present between the source/drain region near the top portion of the wall and the one in the bottom floor of the trench, a thin gate dielectric layer is present on the trench wall and the gate region is present on the thin gate dielectric layer.
a second lateral FET is present having a source/drain region in common with the source/drain region near the top portion of the trench wall.
8. The integrated circuit trench cell of claim 7 wherein the trench has at least two vertical walls, and an FET is present in at least two of the vertical walls.
a central load device within the trench between the FETs, the central load device having top and bottom contacts, wherein the bottom contact is in electrical connection with the common source/drain region in the bottom floor of the trench.
10. The integrated circuit of claim 9 wherein the gate regions and central load device are doped polycrystalline silicon.
11. The integrated circuit of claim 9 wherein the central load device is a resistor.
a central load device within the trench between the FETs, wherein the central load device is a load field effect transistor having top and bottom contacts, wherein the bottom contact is in electrical connection with the common source/drain region in the bottom floor of the trench.
13. The integrated circuit of claim 12 wherein the load FET comprises a central vertical region having a top source/drain region, a bottom source/drain region, a channel region between the top and bottom source/drain regions, a gate dielectric covering the channel region, and a gate electrode at least partially covering the gate dielectric and oriented in across the gate dielectric from the channel region wherein the bottom source/drain region is in electrical contact with the common source/drain region in the bottom floor of the trench.
14. The integrated circuit trench cell of claim 9 where the source/drain region in the bottom floor of the trench consists of a semiconductor element selected from the group consisting of a doped semiconductor buried layer or a doped semiconductor wafer.
15. The integrated circuit trench cell of claim 9 wherein a channel is present between the source/drain region near the top portion of the wall and the one in the bottom floor of the trench, a thin gate dielectric layer is present on the trench wall and the gate region is present on the thin gate dielectric layer.
wherein a second lateral FET is present having a source/drain region in common with one of the source/drain regions near the top portion of the trench wall.
a vertical load device within the trench, the vertical load device having a top contact and a bottom contact wherein the bottom contact is in electrical connection with the first common source/drain region in the bottom floor of the trench, and wherein the load device is selected from the group consisting of a resistor and a field effect transistor.
a central load transistor within the trench, the central load transistor having a top source/drain region and a bottom drain/source region with a channel region between them; wherein the bottom drain/source region is in electrical contact with the gate region of the vertical FET.
19. The integrated circuit trench cell of claim 18 wherein the gate region of the vertical FET is also the gate region for the central load transistor.
DE19883886378 DE3886378D1 (en) 1987-09-14 1988-08-12 Integrated circuit cell with mine.
DE19883886378 DE3886378T2 (en) 1987-09-14 1988-08-12 Integrated circuit cell with mine.
F. Masuoka, et al., "A New High Density Full CMOS SRAM Cell using Polysilicon Interconnection Structure," IEDM Technical Digest, 1985, pp. 280-283.


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This new stylish front fender is made of lightweight fiberglass and polished stainless steel.
The craftsmanship is, as expected, top notch.
These fenders are made to fit the Yamaha SR 400, SR400fi, SR 500 and the XS 650.


Grade Level Expectation: 3.2.1 Understands that the way families live is shaped by the environment.
- Explains how the climate and physical features of an area determine the types of homes in which people live.
- Explains how the food families eat is affected by the natural resources that are available in their regions.


When I was a younger hiker, a friend and I were on a hike in the fall season and heard a gunshot. It really scared the crap out of us! We ran the trail for a couple hundred yards and stopped to listen. We eventually found out that can be quite normal, though startling, when hiking during hunting season.
Be aware when the seasons open and the areas that are open for hunting.
Be seen and heard. Wear bright colors and talk loud if near hunters.
Avoid the chance of meeting hunters and hike in a National Parks.
Do not interfere with the hunt. They belong out in the woods just as much as you do.
HERE is a link to Washington States general hunting dates.
Pets! Remember to always keep your dogs on a leash, especially during hunting season to keep them close. You might also consider making sure your dog has a bright colored vest on too. After all, they look more like a 'huntable' animal then you do.
I think the most dangerous scenario would be opening day of hunting season and it is pouring down rain. Rain will mask sound and at times, sight as well. Also extreme fog or darkness will give more opportunity for a surprise encounter. Use extra precautions while hiking in the rain for sure.


text:
Q: General relativity with space and time on different footing Excerpt from the textbook below. It seems ambiguous what the author means and I am unable to proceed.
Imagine that you live in a Universe where Einstein never existed. Instead, he was replaced by someone that looks alike called Feinstein. Feinstein never envisioned the idea that time and space are on equal footing (something like Cartesian geometry).
Now imagine that you are Feinstein, and you want to describe gravity as geometry, as is done in General Relativity, but without relative time.
Then you would want to describe gravity as curvature in a 3-dimensional spatial manifold. Now imagine that you are in a region where the Feinstein equations hold in three spatial dimensions and that you are in vacuum so that the stress tensor is zero. The question is, would someone on the surface of a planet feel gravitational attraction to the planet if gravity were described as curvature in three dimensions?

A: I agree, there is ambiguity in specifying what the author (of your text) meant. By saying but without relative time the author seems to imply that there is absolute time, but does this mean that there is still finite speed of light and relativistic equations of motions for particles or is there a Galilean mechanics in a curved space? At the very least, existence of time variable  is implied by the presence of sentient being and by phrases like feeling the attraction.
So, we have spatial curvature described by metric $g_{ab}$ that should satisfy some sort of 'Feinstein equations'. If we assume that those are
$$
R_{ab} =8\pi G (T_{ab} −Tg_{ab}),\tag{*}
$$
then outside of material bodies ($T_{ab}=0$) we would have $R_{ab}=0$. But in three dimensions Ricci tensor fully defines Riemann curvature tensor since Weyl tensor vanishes identically in 3D. So outside of bodies we have $R_{abcd}=0$, i.e. flat space. Test particle moving outside of material body would be moving along a straight line and so would not feel gravitational attraction. However, this does not mean that such space-time would be trivial. Inside the material bodies the space would be curved, which means that around a body there would be a solid angle deficit (or excess). For example a space outside of a single spherically symmetric body would have a metric
$$
 ds^2=a \cdot dr^2 +r^2(d\theta^2+\sin^2\theta d\phi^2),
$$
with $a>1$ (angle deficit)  for positive curvature inside the body or $a<1$ for negative curvature and angle excess. So a system of point-like particles would have a geometry of a 3-polytope (potentially with nontrivial topology) with particles at its vertices.
Presumably, that is all that the textbook would expect from this exercise. However, I am not at all satisfied with 'Feinstein equations' (*). First, they do not have any dynamics outside of possible time dependence of $T_{ab}$, while I would expect equations to include time derivatives of $g_{ab}$. Second, if we only consider spatial curvature, there is no reason not to include derivatives of Ricci tensor, $\nabla_a R_{bc}$ and higher, in equations (in ordinary GR they are excluded since we do not want higher than second time derivatives of metric), so there could be other possible equations as a replacement for GR.
And so there is another interesting model for a general relativity with space and time on different footing, this one with a view toward quantum gravity: Hořava–Lifshitz gravity. This model is written in terms of spatial metric, lapse function and shift vector of the ADM formalism. However, instead of starting with Einstein-Hilbert action, the model achieves power-counting renormalizability by using different scaling for space and time. The resulting theory is explained in original paper:

*

*Hořava, P. (2009). Quantum gravity at a Lifshitz point. Physical Review D, 79(8), 084008, doi, arXiv.

Abstract:

We present a candidate quantum field theory of gravity with dynamical critical exponent equal to z=3 in the UV. (As in condensed-matter systems, z measures the degree of anisotropy between space and time.) This theory, which at short distances describes interacting nonrelativistic gravitons, is power-counting renormalizable in 3+1 dimensions. When restricted to satisfy the condition of detailed balance, this theory is intimately related to topologically massive gravity in three dimensions, and the geometry of the Cotton tensor. At long distances, this theory flows naturally to the relativistic value z=1, and could therefore serve as a possible candidate for a UV completion of Einstein's general relativity or an infrared modification thereof. The effective speed of light, the Newton constant and the cosmological constant all emerge from relevant deformations of the deeply nonrelativistic z=3 theory at short distances.

or a recent review:

*

*Wang, A. (2017). Hořava gravity at a Lifshitz point: a progress report. International Journal of Modern Physics D, 26(07), 1730014, doi, arXiv.

redpajama_set_name: RedPajamaStackExchange


Battery Acer VK365072AR (Li-ion, 3.7V / 3,7 volt, 1500mAh / 1500 milliampere), article CS-ACZ130SL. Dimension, mm: 75.80 x 49.80 x 4.10. Remark: X-Longer.
This battery is compatible with devices: ACER: Liquid Z3, Z130; ACER: AP32 1ICP44072, KT0010K005, VK365072AR.


Born in Chicago Joe realized it gets too cold, so he, his wife and dog moved to San Diego. Joe started as a graphic designer and illustrator, but always loved board games. After creating a few prototypes, he got the game design itch and is lucky to do it full time now.
The following interview is about his board game The Thing: Infection at Outpost 31.
Jason (GameGobble): The theme of The Thing: Infection at Outpost 31 is based on John Carpenter's 1982 movie. How did that decision affect your approach to game design?
Joe: The first thing I did even before I started developing the game was watch the movie a few times in a row. I really wanted to get the rhythm down, and that really helped drive the arc of the game. Starting with source material is kind of a double edged sword. On one hand you have an obvious starting point, on the other it can limit what you do. I tried to find the balance between feeling like this is a 1:1 retelling of the movie and a story that lives parallel to the original.
Jason: The Thing: Infection at Outpost 31 is a deduction game, where most players are cooperating while the hidden "Imitation" has opposing objectives. How did you come up with the mechanics to create the feelings of tension and paranoia?
Joe: I was extremely fortunate to have a ton of help on both the Usaopoly and Mondo teams. I started super bare bones: get an identity, go on a mission, pass or fail. And the game evolved from there. We added the map, the flame thrower, the rope, etc. Any time I was stuck I would go watch the movie.
Jason: The game can be played with 4 – 8 players. With more players, it's easier for the Imitation's identify to remain hidden. How does gameplay change with fewer players?
Joe: Fewer players is much, much harder. I think the sweet spot is probably around 7. For those gaming groups that only have four or so I would say learn to read your friends. Look for those small tells. Even if an Imitation is playing clean, with a lot of people you can still read their body language.
Jason: What kind of experience did you want players to have by playing The Thing: Infection at Outpost 31?
Joe: Paranoia first and foremost was the most important thing. I want people to be able to scream at their friends during the game, then get a good laugh after.
Jason: What is one thing you want gamers to know about The Thing: Infection at Outpost 31?
Joe: I think I would want people to check out the work of Justin Erickson, the artist on the game. He puts out so much amazing work, and really killed it on the game!
Check out "The Thing: Infection at Outpost 31" on Amazon!


Adding to the increasing body of literature on the contentious period of the 1904-08 Namibian genocide, Elizabeth Baer's analysis focuses on the concept of the genocidal gaze and the African gaze of resistance to it. Implying power structures, the notion of the gaze allows Baer to explore different modes of perception and presentation of dominance and victimhood, over time and through the eyes of both German and African authors.She draws on literary texts and art, using the 19th century letters and diaries of visionary Nama leader, Hendrik Witbooi; a 1906 colonial novel by the German Gustav Frenssen, and three post-Holocaust texts by German Uwe Timm, Ghanaian novelist Ama Ata Aidoo, and artist William Kentridge of South Africa.
Highlighting concepts such as racial superiority, lebensraum (living space), rassenschande (racial shame) and endlösung (final solution), as well as methods such as the use of concentration camps, death camps, intentional starvation, and the killing of women and children, she demonstrates connections between the Ovaherero and Nama genocide and that of the Holocaust in the 1940s.
The Genocidal Gaze is a challenging discussion of contemporary issues such as colonial practices, cultures in contact, definitions of genocide, European and African race relations and post-colonial theory.


Let's face some facts about cool toys, we all love them! Whether it is the newest mobile phone or the new PS2 we all look and wish we had the newest and greatest!
Superdrewby reviews the newest and coolest toys that have been launched on the market!


text:
Jim Deeks
David Goodman
Peter Mumford
Course of the Week: Hidden Lake Golf Club
By Peter Mumford
In Courses, Feature, Peter Mumford
Hidden Lake in Burlington was the host course for the Southern Ontario Open in late July and we were there.
While the pros were toiling away on the New course in the early part of the day, the Bunker Squad and I were ripping up the Old course. Then for a change of pace, we took a tour around the New to see what all the fuss was about.
Hidden Lake packs a strong one-two punch and I'm hard pressed to say if I have a favourite. I'd never played either course before but had always heard good things about the facility.
The Old course has been around since the early sixties and includes a lot of typical design features from that era – small relatively flat greens, shallow bunkers and tree-lined fairways that often ride a side slope or rise and fall along natural lines. The course has matured a lot over sixty years but you can see that it would have always been an interesting layout and while not overly long at 6,700 yards, you have to find the fairways to attack the greens. Anything outside the tree lines almost always means extra strokes.
Opening with a 3-4-3-4 combination, the Old serves up some challenge right off the bat. While the two short holes are relatively straightforward, the par 4's are tight and follow tree-lined fairways that ramble over ridges making for semi-blind shots to the greens. A little experience might make these holes easier but it's always hard to hit a good shot when you can't see where you're going.
Hidden Lake Old, No. 5
The fifth is a reachable dogleg par 5 but requires a long draw (hook) over some trees to give you a shot. The more prudent chance at birdie is to play to the corner, then lay up to a yardage where you can put a lot of stop on the ball. The green is tiny and has a nasty side slope that will feed off the green.
Another par 5 awaits and it turned out to be a fine example of a Hidden Lake trademark – the double dogleg par 5. Most of the three-shotters aren't world record length, measuring in the mid-500 yard range, which would make them reachable in two for the big hitters. However, when they add a little twist like tucking the green behind a grove of trees or around a corner, that second shot becomes considerably tougher to pull off and makes you think it would be more prudent to use your wedge to make birdie rather than a 3-wood.
No 6 and No 10 are both like that. Great holes that you probably want to get a few looks at before you know the best way to approach them.
Hidden Lake Old No. 14
The stretch of holes from 14 to 17 is exceptional, hugging the property line with trees and OB guarding the right side and the land falling away in that direction too. No 14 is likely the signature hole on the Old course – a snickety little par 3 that looks like it's there for the taking – just 185 yards from the tips (160 yards for us) over a bit of a valley to a sloping green perched on the side of the hill. The hole is so natural looking, you'd think all the architect had to do was stick a flag in the ground. Turns out, it's a tough enough shot to hit the green but if you miss, it's even harder to get the second shot close, even if you're just off the green.
Along about this time, the Squad started asking me where Hidden Lake was cuz we hadn't seen any sign of water yet. After the delicious par 5 15th hole, which was reachable and did yield one of our few birdies, the 16th and 17th traverse some rolling terrain that offer glimpses of Lake Medad in a valley far below. The lake isn't actually on the course but true to its name, it is pretty well hidden.
No's 16 and 17, by the way are really strong par 4's that top out around 400 yards and require you to move the ball right to left to keep it in the fairway.
The Old course finishes with a cool little par 3 near the clubhouse that has a nasty grass bunker in front. It's a quirky finish but fits with the old style design of the course – definitely a shot-makers layout and not something you're going to over power.
Power looks like the name of the game on the New.
While we were searching for lost balls and hidden water on the Old course, Raoul Menard from Quebec was fashioning a record setting pace in the Southern Ontario Open. He eventually went on to win the tournament with rounds of 63-68-66-63. That sounds like the New course might be a pushover but we didn't see anything like that.
Measuring pretty much the same yardage as its sister course, the New has more of an inland links feel to it. The fairways have fewer trees but do feature stands of fescue; the bunkers are deep and flashed into the sides of raised greens; and the putting surfaces themselves are large and contoured.
You can see spots where a long hitter could really let loose on the front with pairs of holes paralleling one another and no discernible penalty if you strayed into another fairway. Back-to-back 5's on #7 and #8 can be reached in two although the 7th hole at 588 yards from the tips is a brute. It starts up hill, then turns left to a well protected green that sits in a grove of trees. It's a very pretty hole and a pretty intimidating one too.
Hidden Lake New No 9
The 9th hole is the signature hole on the New and it's a classic. At 221 yards from the tips, it requires a Jason Day type bomb to stick on a potato chip green that is fronted by a pond and a rock wall and canted from front to back. It's also ringed with mounds and bunkers so there isn't any bail out room. Even from the mortal tees at 160 yards, it's a daunting shot. The green itself is no bargain either with tons of sideways movement, gullies and trenches and barely a flat spot anywhere.
The back nine features more water although none of it is hidden. No 14 is the #1 stroke hole for good reason. Although just 501 yards, the fairway is lined with deep fescue and water hugs the edge of the green making for an awkward lay-up or a hero approach.
My favourite hole on the New is #16, a very short par 4 which might be drivable except for the huge gaping bunker in front of the green. If you're trying to protect a score, even a lay-up can be tough as the fairway is guarded by several bunkers on each side. But a well placed shot leaves only a flip wedge to a large green. The putting surface has enough slope to make you think about where you need to land it though.
Hidden Lake New No 16
Most of us can't hit a drive 300 yards but it's so inviting, you have to give it a go – maybe you'll catch a favourable gust!
That's it then – the Old and the New – two great options. After playing them both, the only way to decide which is better is probably to have another round on each, then flip a coin.
Hidden Lake is a ClubLink daily fee course and open to the public. It is also part of the ClubLink Players Club program. Green fee rates range from $30-$69 depending on time and day. Players Club members receive a 25% discount on posted rates.
Peter Mumford is the Editor of Fairways Golf & Travel. He's played over 500 different courses in 21 countries and is constantly on the lookout for more great places to play and travel.
Glen Abbey Golf Club to host 2018 RBC Canadian Open
National Pines to host Ontario Championship on Mackenzie Tour – PGA Tour Canada
It's all about the sand at Heron Bay
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Do you have a favourite Pete Dye course or story?
No-shows and controversy highlight exciting event in Hawaii
Internationals come oh-so-close in thrilling Presidents Cup
Say what you want Patrick but we call it cheating
Ten years later, has Tiger really changed?
See our pick for "Turkey of the Year" in 2019
Do the Official World Golf Rankings really tell who's best?
Was Patrick Reed the right choice for a Captain's pick?
GolfNorth to assume management of The Ridge at Manitou
Did Christina Kim do the right thing?
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spectrwm is a small dynamic tiling window manager for X11.
It tries to stay out of the way so that valuable screen real estate can be used for much more important stuff. It has sane defaults and does not require one to learn a language to do any configuration.
It is written by hackers for hackers and it strives to be small, compact and fast.


We accept Visa, MasterCard, American Express and PayPal. There are no hidden fees for using these types of card whether they be debit or credit.
We also offer payment via Paypal. This is also done through our integration with sagepay. Please click on the payment logos on the checkout pages to proceed to SagePay where you will be given the opportunity to pay by PayPal.
We can also accept payments made by Cheque or Bank Transfer. In these cases we can create a pro-forma invoice if required and once payment has been received your order can then be processed.
If you have an ongoing requirement for any of our products we can set you up with a credit account subject to credit scoring, but this will only be done after your first order has been completed on a pro-forma basis.
We are happy to accept purchase orders from any government, school or NHS department. Simply fax (01327 878836) or email (sales@totalweighing.co.uk) your order to us and we will do the rest.


Just days after we hear about functioning induced Pluripotent stem cells from adult skin cells, cells that can produce dopamine, the proteins missing in Parkinson's disease, we read that President Obama is going to overturn the limits on funding for embryonic stem cell research. Despite the fact that these cells match the patient because they come from the patient, that they will be cheaper, more accessible and we believe have less risk of causing cancer, this Monday morning, the 9th of March, 2009, the White House plans a quiet ceremony to sign the Executive Order.
Follow the Yellow Brick Road, Mr. President. The great embryonic Oz will get you home. Do not look behind the curtain, ignore that little man.
"Stroke of the pen, law of the land. Kinda cool!" (Thank you, Paul Begala.) We've been trying to spend a Trillion dollars every 10 days in the Obama administration. Let's just throw more good money after bad.
I recommend that you read that link above, in order to compare reality with what the proponents of destructive embryonic stem cell research believe.
The article is so full of holes. The title and first paragraph say "ban." There never was a ban. Ask Daley and Melton of Harvard who have been creating embryos for destruction to harvest the parts.
Prockup must have been teased too much about his name as a child. Seriously, who among us stopped and now started to believe in science again?
We are not behind, we are not embarrassed, unless it's in imposing regulations. Even the "Progressives" are calling for more restrictions. The UK has more regulations on regenerative medicine and embryonic research than the US. France, Germany and Israel have similar limits on funding. Germany, at one time had criminal charges and fines attached to their ban.
CIRM has $3 Billion which must be spent on cloning and embryonic stem cell research. Their "Strategic Plan?" (This is a pdf, for a review, read this article at the CIRM website.) One cure and 2 trials in ten years. Who thinks the US is going to top their billions in embryonic research, when results with induced Stem Cells are bounding ahead?
Oh, I know, CIRM thinks the NIH should buy their $400 Million in bonds, this year. No one else wants the losing proposition.
« >Non-embryonic stem cells to cure Parkinson's?


text:
Q: Expand The App bar in Flutter to Allow Multi-Line Title? Does anyone know how I can create an app bar with a multi-line title, as per the material guidelines show here?
https://material.io/design/components/app-bars-top.html#anatomy

Any ideas how to do this? It seems like it should be straightforward given that it's part of the material guidelines! Worth pointing out that the title is user defined, so I want to allow the app bar to expand from a single line to multiple lines (perhaps with a limit imposed) depending on user input.
Mike

A: You can use RichText:
          SliverAppBar(
        flexibleSpace: FlexibleSpaceBar(
          background: Container(
            color: Colors.indigoAccent,
          ),
          title: RichText(
            text: TextSpan(children: [
              TextSpan(
                text: Constants.homePageTitle,
                style: textTheme.headline,
              ),
              TextSpan(text: "\n"),
              TextSpan(
                text: Constants.homePageSubtitle,
                style: textTheme.subtitle,
              )
            ]),
          ),
          titlePadding: EdgeInsets.only(left: 10, bottom: 20),
        ),
        floating: true,
        backgroundColor: Colors.greenAccent,
        expandedHeight: 150.0,
      ),

A: Try below code. This will give multi-line where you can also control the text styling.
Use Text instead of RichText if you do not want different style for all the lines.
             AppBar(
                title: RichText(
                  textAlign: TextAlign.center,
                  text: TextSpan(
                      text: "Developer Developer",
                      style: TextStyle(fontSize: 20),
                      children: <TextSpan>[
                        TextSpan(
                          text: '\nTrip List',
                          style: TextStyle(
                            fontSize: 16,
                          ),
                        ),
                      ]
                  ),
                ),
                backgroundColor: MissionGPSTheme.themeBlueColor
            ),

A: AppBar will let you get close to this, however you do have to indicate the height of the bottom PreferredSize widget, according to your text length, which isn't ideal.

@override
Widget build(BuildContext context) {
  return Scaffold(
    appBar: AppBar(
      backgroundColor: Colors.deepPurple,
      leading: IconButton(icon: Icon(Icons.menu), onPressed: () {}),
      actions: <Widget>[
        IconButton(icon: Icon(Icons.search), onPressed: () {}),
        IconButton(icon: Icon(Icons.more_vert), onPressed: () {}),
      ],
      bottom: PreferredSize(
        child: Padding(
          padding: const EdgeInsets.fromLTRB(80.0, 0.0, 80.0, 16.0),
          child: Text(
            "Summer Trip to Tokyo and Kyoto",
            style: TextStyle(
              color: Colors.white,
              fontSize: 24.0,
            ),
          ),
        ),
        preferredSize: Size(0.0, 80.0),
      ),
    ),
    body: Text("..."),
  );
}

A: This piece of code will create a custom Scaffold with an AppBar that supports receiving no title, a title, and a title and a subtitle. In case you don't provide a title, it will show a given text (in the example, the name of the app), while in case you set a title and a subtitle, it will use a two lines style with the proper Material Design text style.

import 'package:flutter/material.dart';

class TwoLinesAppBarScaffold extends StatelessWidget {
  final Widget body;
  final String title;
  final String subtitle;

  TwoLinesAppBarScaffold({this.body, this.title = "QuitNow!", this.subtitle});

  @override
  Widget build(BuildContext context) {
    Widget widget;

    if (subtitle == null) {
      widget = Text(title);
    } else {
      widget = RichText(
        textAlign: TextAlign.start,
        text: TextSpan(
            text: title,
            style: TextStyle(
              fontSize: 20,
              fontWeight: FontWeight.w500,
            ),
            children: <TextSpan>[
              TextSpan(
                text: '\n$subtitle',
                style: TextStyle(
                  fontSize: 16,
                  fontWeight: FontWeight.normal,
                ),
              ),
            ]),
      );
    }

    return Scaffold(
        appBar: AppBar(
          title: widget,
        ),
        body: Center(child: body));
  }
}

A: This can be achieved by replacing the "title" property of AppBar with "flexibleSpace":
  Scaffold(
    appBar: AppBar(
      flexibleSpace: Center(
        child: Column(
          children: [
            Text('Title Line One'),
            Text('Title Line Two'),
          ],
        ),
      ),
    ),
    body: body
  ),

If overflow occurs due to height, just wrap AppBar with a PreferredSize widget and set the height to a higher value than the default one:
  Scaffold(
    appBar: PreferredSize(
      preferredSize: Size.fromHeight(100),
      child: AppBar(...),
    ),
  ),

A: This is not implemented yet.
However you can achieve similar results by using SliverAppBar designed for CustomScrollView.
Bear in mind that this is not optimal though. As it required hard coding the size of the icons and stuff. Due to FlexibleSpacebar not having width constraint.

import 'package:flutter/material.dart';
import 'package:cloud_firestore/cloud_firestore.dart';
import 'package:flutter_project/materialSheet.dart';

void main() => runApp(new MyApp());

class MyApp extends StatelessWidget {
  @override
  Widget build(BuildContext context) {
    return new MaterialApp(
      title: 'Flutter Demo',
      theme: new ThemeData(
        primarySwatch: Colors.blue,
      ),
      home: new MyHomePage(),
    );
  }
}

class MyHomePage extends StatefulWidget {
  @override
  _MyHomePageState createState() => new _MyHomePageState();
}

class _MyHomePageState extends State<MyHomePage> {
  @override
  Widget build(BuildContext context) {
    return Scaffold(
      body: CustomScrollView(
        slivers: <Widget>[
          SliverMultilineAppBar(
            title: "Summer Trip to Tokyo and Kyoto",
            leading: IconButton(
              onPressed: () {},
              icon: Icon(Icons.menu),
            ),
            actions: <Widget>[
              IconButton(
                onPressed: () {},
                icon: Icon(Icons.search),
              ),
              IconButton(
                onPressed: () {},
                icon: Icon(Icons.more_vert),
              ),
            ],
          ),
        ],
      ),
    );
  }
}

class SliverMultilineAppBar extends StatelessWidget {
  final String title;
  final Widget leading;
  final List<Widget> actions;

  SliverMultilineAppBar({this.title, this.leading, this.actions});

  @override
  Widget build(BuildContext context) {
    final mediaQuery = MediaQuery.of(context);

    double availableWidth = mediaQuery.size.width - 160;
    if (actions != null) {
      availableWidth -= 32 * actions.length;
    }
    if (leading != null) {
      availableWidth -= 32;
    }
    return SliverAppBar(
      expandedHeight: 120.0,
      forceElevated: true,
      leading: leading,
      actions: actions,
      flexibleSpace: FlexibleSpaceBar(
        title: ConstrainedBox(
          constraints: BoxConstraints(
            maxWidth: availableWidth,
          ),
          child: Text(title, textScaleFactor: .8,),
        ),
      ),
    );
  }
}

A: Found some solution with textPainter  to count text height depending on it's style and screen width and pass it to AppBar toolbarHeight
class AppBarHeightCalc {
  String title;
  double width;
  AppBarHeightCalc({
    required this.title,
    required this.width,
  });

double horizontalPadding = 32;
double actionsWidth = 48;
final style = TextStyle(fontSize: 26);

  double calculateHeight() {
    TextPainter textPainter = TextPainter()
      ..text = TextSpan(text: title, style: style)
      ..textDirection = TextDirection.ltr
      ..layout(minWidth: 0, maxWidth: width - horizontalPadding);
    return (textPainter.size.height);
  }

double calculateHeightWithActions() {
    TextPainter textPainter = TextPainter()
      ..text = TextSpan(text: title, style: style)
      ..textDirection = TextDirection.ltr
      ..layout(minWidth: 0, maxWidth: width - actionsWidth - horizontalPadding);
    return (textPainter.size.height);
  }
}

class AppBarExample extends StatelessWidget {
  const AppBarExample({super.key});

  @override
  Widget build(BuildContext context) {
    String title =
        'Lorem ipsum dolor sit amet. 33 nostrum neque qui possimus fugit ex fugiat';
    double screenWidth = MediaQuery.of(context).size.width;
    final appBarHeight = AppBarHeightCalc(title: title, width: screenWidth);
    return Scaffold(
        appBar: AppBar(
          title: Text(
            title,
            maxLines: 3,
          ),
          toolbarHeight: appBarHeight.calculateHeight(),
        ),
        body: Center());
  }
}


The PHP Developer is an exciting opportunity to work in a team of passionate professionals who apply best practices of software development to build a well-specified, scalable product based on strongly modularized architecture, automated testing and deployment. The position is located in Berlin.
You will become a part of the core development team to design and develop complex web applications and new features for our platform. Adhering to agile development methodologies you will also ensure code quality and enforce best practices by communicating and sharing them to team members.


Private dining Battersea Power Station: Megan's restaurants are famous for their parties. We offer our famous sharing platters, which are ginormous and piled high with delicious grilled food.
To start, you have the antipasti sharing boards of charcuterie, grilled vegetables, spicy backed feta & honey, harissa hummus, mini mozzarella, Kalamata olive tapenade and also our seven-seeded sourdough.
For mains, you choose two of the six available options (also on platters) and everyone can have a bit of each. Choose from bavette steak or cote de boeuf with peppercorn sauce, spicy chicken skewers, halloumi, tiger prawns or salmon with garlic and parsley butter. The mains also come with all sides included: fries, seasonal vegetables and mixed leaves.
Our desserts are pretty impressive and they're also to share! We have mixed berry pavlova or our famous gluten free brownie tower with whipped cream and berries.
Check out our party menu here.
We also have a private dining room, The Orchard Room, at Megan's Kings Road (Fulham) seating up to 18 people. This room has a bluetooth speaker so that you can play your own music. At Megan's on the Hill (Balham), we have The Flower Room, which is semi-private (with curtains to separate it) and seats up to 24 people. There is no minimum spends for our two private dining rooms.
We also offer private hire of all of our restaurants. For more information on minimum spends for private hire, have a look at our Group Booking Document here.
Megan's restaurants are also very instagrammable. We have been described by Timeout as offering 'filthily delicious food in a magical setting'. Host your party under flower blossoms at Parsons Green, by the flower wall at Balham, or in our magical fairylit year-round winter garden at Kings Road (covered and heated).
Private dining Battersea Power Station: We require a preorder from our party menu or canape menu for all parties.


Mr. Dejeuner founded our company 55 years ago after he visited his grandmother's Belgian motherland. He's been perfecting and innovating on his Grandma Martine's recipes ever since.
Inheriting her father's taste for chocolate's subtle sophistication, Miss Martha's mission is to let the whole world know how rapturously delicious yet affordable artistanal chocolate can be.


A number of rooms have been reserved for participants in the DESY hostel and will be attributed on a first-come first-served basis. To reserve a DESY hostel room, please read the information and fill out the registration form on the DESY hostel webpage. Important: In the field "Additional Text" please enter "MPI conference". If you do not receive a confirmation of your reservation by email within four weeks, please contact the local organizing committee.
Here is a list of hotels in walking distance or with good public transport connection to the DESY site.


from HoCoPoLitSo's blog 2013: "Against the Ruins, Her Book of Poems"
These fragments I have shored against my ruins.
If nothing else, I am a reader. Perhaps because I always had my face in a book, my parents logically wondered when I would finally write one. As much as I love reading novels (the longer the better), I have also always been aware that I am not driven to create them. Characters do not haunt me, demanding I write their stories, as in Pirandello's Six Characters in Search of an Author. Extended, magical narratives do not spring into my mind on the train. My few hesitant attempts at starting a story and seeing where it would go led . . . nowhere.
I wondered if I would ever be able to find sustained time to shore the fragments, and after a few years, the answers were all, suddenly, yes. My angriest, saddest lines, after thirteen discordant tries, flew into place like a blackbird and won a Pushcart Prize. I applied for a sabbatical, and received it. A friend taking a graduate course in design asked if she could work with me to produce a chapbook. And so in the spring of 2012, when Tessa would have been eight, I filled our birdfeeder, said a prayer of thanks, shook out the pieces, printed the drafts, and spread everything out on a table. I looked at my notes in the margins of great poets. In the softly silent house, for six hours a day, I listened to what I remembered. I followed those fragments, my breadcrumbs, my torches, planchettes. They were tickets, too, to a prize I was finally able to claim – the gift of understanding how I and my whole here and absent family are connected to a much, much larger story of love and loss, and what comes after. So I guess I do have that blessed clamoring that leads to the work, the words, and the release. It is one of my daughter's many gifts, to turn me into a writer, after all.
I started posting pictures to the album "Three Beautiful Things" last spring to offer something of myself and my day in a simple, positive way. It adds joy and a sense of a changing, abundant world to my daily walks with the Buddha.
Lately I have been more aware of what I cannot capture, the much more fleeting sights: a doe's tail receding in the leaves like a white, surprised face; the tiny fawn hiding from us in the bracken; the red-headed woodpecker bursting across the path. There is also the whole unclickable world of touch and scent: honeysuckle, pine, warm wind lifting my hair, the feel of bark and stone.
I can only take in the moments as they slip past, and I can't share them afterwards in anything but words. Telegrams of loss: wish you were there. We stick them on the Web like flies, tie them on the ends of lines we cast towards one another. Maybe the beauty lies in the impulse to cast, and is manifest in the motion.
I like living where I can walk easily into what feels like deep green woods but also see rooftops and the big windows and decks people put on their houses to enjoy the trees. I love how, in our town, the green world intersects the village. I also love the invisible webs we climb around on, spinning tales of our days, hoping others will look up, point, and click: yes, me too, we are like each other.
It's Mother's Day weekend, and my girl has strep throat. She is rarely sick, and since I've only recently started to get used to her seven-year-old wit ("Oh no you didn't, Mama-girlfriend!") and independence ("You're really embarrassing me!"), the sudden throwback to toddlerhood that the illness causes is startling. She wants constant closeness – for me to lie next to her and stroke her face and arms, to sing lullabies, to make the universal soothing shushing sounds of mothers everywhere. I hold her hair when she throws up, steam up the bathroom and cuddle her in the eucalyptus mist, take her temperature, coax down the medicines and sips of water. We've been doing this for almost thirty hours, and I hope the amoxicillin kicks in enough tomorrow to give her some relief. I hope she comes to forget the pain and joins those of us who can conjure a cherished feeling decades later with the slightest whiff of Vick's vapor rub, ginger ale, toast and tea.
But as much as I wish her discomfort away, and as immeasurably grateful as I am to live in the age of antibiotics, to have access to good doctors and sick leave, to know that this is a common illness with a known and reliable cure, I can also say that this sweetly intimate time has been, strangely, a gift, and an oddly apt way to spend the hours leading up to Mother's Day. This girl loves her dad, but I'm the unique and irreplaceable being she wants when she's sick. The intense love and focus I have always within me, that lie fallow on brisker, ordinary days, are suddenly very much in demand. The old sayings about giving being far better than receiving strike true and clear. My old friend adrenaline, from their baby years, comes back to visit. I sleep and eat little. I don't need anything all this Mother's Day weekend but to place myself within constant reach, and to give thanks: for having a loving mother, and for the chances given, over and over, to be one myself.
Spring has finally come with its new colors and warm air, it has melted the ice from our paths, and I'm getting a little drunk on it during our morning walks. I can hear the Peanuts gang singing "Beauty ever-y wheeeere," and I start taking pictures with my phone of the tight buds and trumpeting daffodils. And then I can't seem to stop taking pictures, which annoys the dog, Buddha, but I remind him how often I stop to let him nose through his own mysterious realities of scent and aura.
Returning to the kitchen and a cup of tea, I find I want to share the pictures on Facebook. I've come to appreciate and use FB in ways that strengthen my connections to people I care for, that make me feel I'm creating or passing on something good (humor, wisdom, knowledge, beauty) to family, all far away; to people who are an important part of my daily life; to people I see less frequently but with whom I share love and respect and shared history; even to a few acquaintances with whom I share something significant, like the memory of an intense poetry workshop or a mutual appreciation for the same writers. I have finally found the right amount of and uses for social media so that my life is better for it.
Sharing just three images seems the right amount – I'm conscious of respecting people's time and attention, and I believe in the power of careful editing. Many people like the images and say kind things about them: this builds my happiness. I'm sure my pictures are very "Photography 101," and while more knowledge of compositional principles and a better app or camera would likely result in technically better pictures, at this point that isn't really the point. The effect on me of seeking beauty every morning goes surprisingly deep.
Each morning as we set out, I worry that I won't find more beautiful images than yesterday's, and I wonder if I need to put Buddha in the car and drive to find new paths. And yet, before I've even reached the end of the same old block, I've stopped several times to frame and click. Again, I get giddy with it, every step bringing a new angle and something to capture. Of course, I couldn't have chosen a better time of year to begin this project. Springtime in suburban Maryland is an embarrassment of riches.
I didn't always feel this way about spring. I never felt it was "the cruelest month," but after childhood somehow I never felt completely worthy of it, never exuberantly "puddle-wonderful": more "like a perhaps hand." The first spring that I met as an adult with pure joy was in the year 2006, pregnant with Bennett. I write about this in my poem "One Easter," and it reminds me that, of the many gifts my children have given me, the way all three of them brought me out of the layers of self-preoccupation to live more immediately, with the core of me open to the wind, is one of the dearest.
When we arrive home from our walks now, I feel unusually full, in the best sense. I am walking in abundance. I'm very new to this practice, but already I am somehow eating less, buying less, needing less. By deliberately noticing beauty, and forcing myself to choose only a few pieces of it to keep and share, I am cultivating the sense that what is available is more than enough. My real self-challenge goes beyond taking and sharing three beautiful things: it is to respond to this burgeoning world like an artist, with both exultation and discipline, and to sharpen my eye so that the beauty is still evident to me over time, when Nature is no longer so obviously lavish and bursting with fists of blooms. It is early in the season, but I hope the lessons hold.
Tara Hart: professor, poet, literary programmer, and ardent fan of great writers.


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Blue Jackets pluck Colton Gillies from Waivers
By Darren Coslov January 15th, 2012
The Columbus Blue Jackets have claimed forward Colton Gillies off waivers from the Minnesota Wild. It was announced Saturday by Executive Vice President of Hockey Operations and General Manager Scott Howson. Placed on the wire Friday, Gillies had 24 hours to clear before any demotion to the Houston Aeros of the American Hockey League, the Parent club's top minor league affiliate. Wishful thinking for Wild General Manager Chuck Fletcher, attempting to sneak Gillies to the AHL in an effort to get him more ice time. Hello Columbus.
Scott Howson continues to find ways to tweak the Blue Jackets 23 man roster in an attempt to improve the on ice performance and the organizational depth chart. Taking low risks and creating a potential high reward seems to be the trend with several moves made this season. There is more to the Gillies addition though, perhaps a past relationship with Blue Jackets Head Coach Todd Richards, when the latter was Gillies bench boss in Minnesota from 2009-2011.
"They're excited and so am I," Gillies said. "I'm excited to play and get going."
Gillies, a native of White Rock, BC, was a former first round pick of the Minnesota Wild (16th overall) in the 2007 NHL Entry Draft held at the Nationwide Arena in the Arena District of Downtown,Columbus. Gillies, in a sense is right back to where his NHL journey began.
The 6'4 208 lbs. left winger, will add size, energy and speed to the Blue Jackets lineup. In 37 games played so far in the 2011-12 season, Gillies picked up two assists and 10 penalty minutes.
If there is one thing that the Columbus Blue Jackets will openly hand to Colton Gillies, it's an opportunity to help a struggling franchise. Something Gillies didn't seem to be receiving in Minnesota.
"I think he's definitely hungry for an opportunity, Howson said. "He probably needs a fresh start and a change. He's a young guy who's only 22 years old and he was a first-round pick. He's big and he's a good skater and we think there's some upside there. Sometimes a young player needs a change to realize his potential, and that's what we hope to give him here."
Columbus, (12-27-5) has the worst record in hockey. Things can only get better for the Blue Jackets though. This might just be what the doctor ordered for both parties. Colton Gillies is bringing high expectations of himself to his new team.
"I put a lot of expectations on myself. Sometimes, that's not a good thing, when the coach sees you down after a game," he said. "It's not like I don't care. It's almost like I care too much. But I'm learning, and I think everyone is. You have ups and downs, and it's how you get back up."
The right attitude at the right time for the Columbus Blue Jackets.
Colton Gillies
Scott Howson
Todd Richards


Why Come to Westbourne, Dorset?
Westbourne, Dorset (not to be confused with the other one in Hampshire) has been dubbed an "Urban Village". It is very much an integral part of the conurbation of Christchurch, Bournemouth and Poole. However, it manages to maintain not only its identity, but a life of its own.
So often, urban sprawl can be the death of the smaller villages that get swallowed up. However, far from suffering this fate, Westbourne has bucked the trend. Not only has it become fashionable, it has a life and vibrancy of its own that reflects the small community and identity. Community spirit ia alive and well here.
Virtually everything is available here. There is still a proper Post Office, Library and four major banks for starters. Not many communities can boast this nowadays. Despite the presence of supermarkets, there is a Butcher, Baker and a Fruit and Veg shop. The supermarkets are represented by a reasonably large Marks & Spencer Food Hall (taking the place of the previous Waitrose, which moved to a larger site in Parkstone), Iceland and a small Tesco Express in the former Methodist Church.
What perhaps makes Westbourne, Dorset stand out is its arcade. Real old-fashioned covered and pedestrianised shopping! Covered in a separate article, this houses an eclectic mix of businesses. A old-fashioned hardware store, cafés and interesting shops full of curios are just part of this experience. Perhaps the biggest surprise is the UK's smallest cinema! Just 19 seats, The Colosseum is located in the basement of one of the cafés.
But even all this only scratches the surface of Westbourne. There are all sorts of other shops and businesses, from clothing to artisan patisseries, jewellers to dry cleaners – and many more besides. An independent Bingo Hall still runs in the Grade II listed former Grand Cinema. Then, there are places to eat and drink. Three pubs in the main shopping area are complemented by a range of bars, cafés and coffee shops.
The area is also very accessible, with good car parking, and excellent bus services. There is also a selection of places to stay, with several small hotels and holiday flats, and a couple of larger hotels near Alum Chine. Just over the border towards Bournemouth is a Premier Inn.
With the Golden Beaches the area is renowned for just a short walk from the centre at the bottom of Alum Chine, there really is something for everyone.


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Lions in West Africa Are on the Brink of Extinction
A young lion cub in the Yankari Game Reserve, Nigeria.
In a blog a year ago, we reported on a steep decline in the African lion population. At that time, researchers estimated the lion population in West Africa to be about 500. But a six-year research study of lions in West Africa undertaken by Panthera, an Aid for Africa member, and published this week in the journal PLOS ONE, finds the situation is far worse. Only 250 adult lions survive in the region today.
Adding to the concern is the recent discovery that West African lions are genetically distinct from lions found on the plains of East and South Africa. The loss of the remaining West African lions would mean their extinction.
Researchers surveyed 21 protected wildlife areas, but found most areas were protected in name only. The majority of areas had no paid rangers or management staff, and, as a result, no lions. Researchers found lions in only five West African countries– Senegal, Nigeria, Benin, Niger, and Burkina Faso.
Protected areas in West Africa.
The study calls for the West African lion to be recognized as "critically endangered" and for governments and conservation organizations to help the cash-strapped countries with the remaining lions safeguard the areas where lions are now found. That means funding park rangers and equipment, managing species that are the lions' prey, and supporting training of conservation staff in the countries.
Luke Hunter, president of Panthera and a co-author of the study, said, "Lions have undergone a catastrophic collapse in West Africa. The countries that have managed to retain them are struggling with pervasive poverty and very little funding for conservation. To save the lion – and many other critically endangered mammals including unique populations of cheetahs, African wild dogs, and elephants – will require a massive commitment of resources from the international community."
Aid for Africa and its member organizations are dedicated to helping children, families, and communities throughout Sub-Saharan Africa. Our grassroots programs focus on wildlife protection, conservation, health, education, economic development, and arts & culture in Africa.
Sign our petition to save lions in West Africa.
Share this post on Facebook and Twitter.
Learn more about Panthera and other Aid for Africa members undertaking wildlife conservation and how you can support their work
Read past blogs about lions and other African wildlife
Leave a comment below and share your thoughts.
This entry was posted on Thursday, January 16th, 2014 and is tagged: Environment, Scientific Research, Wildlife.
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Dave Syer attempts to show, with the help of benchmarks, that the Spring Framework is not as slow as some say, and why some apps might have a longer start time.
Arjen Poutsma discusses Spring Framework 5: Predicates, Nesting routes, Route organization, and Filtering routes.
Simon Baslé discusses `Flux` and `Mono` on the JVM, APIs and Reactive Stream, the Reactor execution model.
Gideon Low and Niranjan Sarvi describe an implementation of PII encryption for Geode applications via use of custom PDX Serialization.
Ryan Hunt discusses HCSC's approach to support rapid development and continuous deployment of a high-performance data environment that backs their Digital APIs.
Evan Benoit and Sharif Ghazzawi discuss Geode's architecture built on probabilistic data structures (Yahoo Theta Sketches).
Mark Heckler discusses how Kotlin can be used to reduce boilerplate and increase code quality, showing how to begin incorporating Kotlin into an existing Spring application.
Mario Gray and Josh Long discuss how to test Spring applications, services, and web applications, ensuring that API producers and API consumers work well together.
Viktor Gamov and Gary Russell discuss several Spring projects targeted at Kafka developers: spring-kafka, spring-integration-kafka, the kafka binder for spring-cloud-stream.


text:
define(['underscore', 'backbone', 'jquery', 'model/comment-more-link', 'model/comment', 'collection/comments'], function(_, Backbone, $, CommentMoreLinkModel, CommentModel, CommentsCollection) {
	var Base = Backbone.Model.extend({

		parseComments: function(data, parentPageLinkID) {

			CommentModel = require('model/comment') //in order to have nested models inside of models we need to do this
			CommentsCollection = require('collection/comments') //in cases of recursion its ok!

			var comments = new CommentsCollection()
			_.each(data.children, function(item) {
				// do stuff
				item.data.kind = item.kind
				item.data.link_id = parentPageLinkID
				if (item.kind == "more") {
					var newMoreLink = new CommentMoreLinkModel(item.data)
					comments.add(newMoreLink)
				} else {
					//console.log("THIS IS A T1", item)
					var newComment = new CommentModel(item.data)
					comments.add(newComment)
				}

			});

			return comments
		}

	});
	return Base;
});

redpajama_set_name: RedPajamaGithub


Group lending or individual lending?
Learning about the impact of microcredit is important because the microfinance industry itself is changing. Microfinance institutions across the world are moving from group lending to individual lending. Yet there is not much rigorous evidence showing how these types of microcredit affect borrowers, and this makes it difficult to either substantiate or challenge such a strategic move. This EBRD Impact Brief, prepared by the Office of the Chief Economist, assesses the impact of lending approaches and presents evidence from a recent randomised field experiment in Mongolia.
PDF: Group lending or individual lending?


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photograph by Whitney Joiner. Tim Roberts, Texas Parks & Wildlife cultural resources coordinator, at the "Cave of the Masks" in Hueco Tanks State Park.
Hueco Tanks State Park, east of El Paso, contains an ancient rock art legacy unlike any in West Texas, or in North America. Thousands of painted images on stone outcroppings suggest this was a place of tremendous importance, of sacred significance, to earlier Chihuahuan Desert people.
But it wasn't just a place of ceremony. It was also a habitation. Humble, more subtle than the painted figures and faces, sites across the park preserve traces of the daily life of those who created these images.
Archeologists call this society the Jornada Mogollon, and they're working to preserve and document its record here.
The Jornada paintings at Hueco Tanks are tucked into shallow caves and crevices – and include images of rain gods, storm gods. It's the art of a desert people who'd embraced agriculture.
The tradition began around 600 CE, and lasted some 800 years. The Jornada stretched from the Guadalupe Mountains to present-day Las Cruces and northern Chihuahua. They grew corn, beans, squash and other crops. And, of course, they cooked.
That's Tim Roberts, Texas Parks and Wildlife's lead archeologist in West Texas. In fall 2018, he and his team were recording hearths like this – cooking sites – at Hueco Tanks. In one small area, there are 70.
Past livestock grazing turned grasslands here to shrub, intensifying erosion. Roberts' team wants to locate and document hearths before they wash away.
There are the blackened rocks used to ring fires. But other artifacts are also exposed.
Pottery fragments – painted, or in simple brown – abound at Hueco Tanks. Indeed, the Jornada can be identified by ceramics.
The Jornada needed pots to store seeds and farming surplus. And they needed pots tempered with rock fragments to cook.
They traded for pottery, from distant points. But the Jornada also manufactured their own. A utilitarian style called El Paso Brownware was used for centuries. The Jornada also created "El Paso Polychrome." These ceramics – painted in bands of red, black and brown – were used for non-cooking purposes, in bowls, jars, pitchers, ladles and more.
With its natural reservoirs – its "huecos" – Hueco Tanks is an oasis. But evidence shows the Jornada's resourcefulness in raising crops in an arid land.
Hueco Tanks was the site of at least one village. In the 70s, archeologists excavated the remains of a hamlet of pithouses – structures built within shallow pits, with walls rising above the ground. It was erected around 1100 CE. The dwellings ranged from 50 to 250 square feet.
The desert farmers and potters continued to rely on wild plants and animals. They trapped rabbits, mice, prairie dogs. And they adopted a new hunting technology, replacing atlatls – darts – with bows and arrows, to hunt deer, bear and pronghorn. Lithics – the debris from stone tool-making – surround the hearths.
There's more to discover. Roberts hopes to excavate hearths. Charcoal samples could date the sites. Microscopic plant remains could reveal more about what the Jornada ate, and the fuels they used.
Visitors come to Hueco Tanks for the stunning rock art. Beneath their feet are quieter signs of a unique society, that fused agriculture with ancient desert ways.