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Cybersecurity Updates For The Week 7 of 2020
by Brad | Feb 12, 2020 | Announcements
The struggle to prevent phishing attacks is constant, but here are the top headlines from cybersecurity that shall brief you about the significant events from the past week:
Impersonation Scam On Red Kite Community Housing
Scammers impersonated a genuine contractor's email who was associated with the Britain based charity firm Red Kite Community Housing in August 2019 and sent misleading emails to Red Kite. The charity fell into the trap and lost over $1 million in the process. They disclosed this attack in a statement on 28th January 2020. These spoofed emails appeared to be from associates who were in the good books of Red Kite.
The charity confessed that the attack was induced by a faulty email phishing protection measure on their part and are now taking stringent measures to strengthen their security and train their staff.
US & UK Beware Of Coronavirus Phishing Attacks
While the Wuhan coronavirus terrorizes the world, the adversaries have used this global crisis to their benefit by circulating phishing emails that have been seen in the US and UK so far. These phishing emails claim to have advice for the recipient on ensuring protection from the Coronavirus. However, these are in reality malicious emails with corrupt attachments or links that either download trojan or lead to fraudulent websites.
To protect yourself from phishing attacks like this, adopt adequate phishing prevention measures such as using strong passwords and disabling attachment macros.
Adversaries Target Security Flaws In Linear eMerge E3
Nortek Security & Control's (NSC) Linear eMerge E3 devices have been found with a vulnerability called CVE-2019-7256, which is extremely easy to break through and can be used by even a novice hacker to launch malware and DDoS attacks.
Linear eMerge E3 devices are used to facilitate smart building access control systems that monitor employee and visitor access for doors and rooms based on their credentials. These devices are used in corporate headquarters, factories, or industrial parks, but the command injection flaw (CVE-2019-7256) for which NSC hasn't yet released any patch can be exploited by anyone who knows how to evade anti-phishing measures.
Racine City Hit By Ransomware
The website, email system, and online payment collection systems of Racine city, Wisconsin, were brought down by a massive ransomware attack last Friday. The only services unaffected by the attack were the city's tax collection, 911, and public safety systems.
As a result of this attack that kept systems offline till 3rd February, the city police were unable to process fee payments, provide copies of accident reports and other such official work. The city's information management department is presently working to establish anti-phishing protection and to bring the systems back online.
Iranian Attackers Impersonate Journalists
In yet another hacking scheme, attackers have impersonated journalists and are trying to gain access to noted US personnel's Google accounts via fake emails. The victim who identified the attack was the German academic Erfan Kasraie. Kasraie received a suspicious email from Farnaz Fassihi of the Wall Street Journal inviting him for an interview and asking him to enter his Google password to see the questions.
It is suspected that Iranian hackers are behind the scam, considering the present relations between Iran and the US. However, Kasraie being a cautious academic who takes protection from phishing very seriously sensed that something was fishy about the email. The fact that he was aware of Fassihi's transfer to The New York Times was an added hint.
Ransomware Hits Dundee And Angus College
Dundee and Angus College in east Scotland underwent a massive ransomware attack last Thursday from which it is yet to revive fully. The college authorities asked the students to remain offline and change their passwords as an anti-phishing protection measure. Struck by this attack, the college canceled its classes on 4th February (Tuesday) 2020. The entire IT system of the college was brought down, and this has hindered the learning of students who earlier studied from the college's online learning resources.
The 5000 students registered with the college are worried about a prospective loss of Grade Unit, which is sure to hamper their careers. The college finds this attack more challenging than it seemed earlier and struggles to reestablish their online portals.
Malware Hits Fondren Orthopedic Group, Texas
Fondren Orthopedic Group of Texas recently discovered the intrusion of malware in its systems. This attack led to the compromise of the medical records of around 30,049 patients. They found the breach in November and aren't able to retrieve the medical records of patients ever since.
The compromised details include the names, addresses, telephone numbers, diagnosis and treatment information, and health insurance information of patients. Apart from investing in anti-phishing services, the Fondren Orthopedic Group has asked the affected patients to prepare new patient forms with detailed medical histories.
Ransomware Hits Australian Toll Group
Last Friday, the Australian logistics company Toll Group underwent a severe ransomware attack that compelled it to shut down some of its systems as a phishing protection measure. They have informed the law enforcement, the Australian Cyber Security Centre, and cybersecurity organizations, which are working steadily to reestablish their systems. Meanwhile, some sectors are working manually to clear the backlog of undelivered goods.
With an employee base exceeding 40,000 people, Toll has claimed that their investigations haven't found any incidents of personal data loss so far. They have also informed that customers across the globe are now able to access their services such as freight, parcels, warehousing and logistics, and forwarding operations.
Diabetic People Beware Of Android Malware
Adversaries are not far behind either when it comes to innovation; this time the attackers have come up with an Android malware (detected as Android/FakePlayer.X!tr by FortiGuard Labs) that functions under a program called "Treatment for Diabetes". This malicious app pretends to provide information about diabetes that includes facts and myths and other data about diabetes, such as diagnosis methods, treatment options, and insulin. But in reality, the app was secretly using a Trojan dialer to send messages in an attempt to steal the victim's data and money.
Fake Coronavirus Story Leaked In US Military
Perhaps to defame NATO, Russian operatives hacked into the content management system of Lithuania's "Kauno Diena" newspaper and posted a fake story claiming that an American soldier deployed to Lithuania was infected with Coronavirus. Although this news was streaming-only for ten minutes before being brought down, it marks the first successful hacking attempt which could get through Kauno Diena's system. This isn't the first instance of fake news being spread; disinformation campaigns have always targeted NATO. They are now adopting phishing attack prevention measures to fight fake news and other cybercrimes.


2004-11-05 Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CUI, YUPING, MANSFIELD, SCOTT M.
A method for performing model based optical proximity correction (MBOPC) and a system for performing MBOPC is described, wherein the process model is decomposed into a constant process model term and a pattern dependent portion. The desired wafer target is modified by the constant process model term to form a simulation target that is used as the new target within the MBOPC process. The pattern dependent portion of the model is used as the process model in the MBOPC algorithm. This results final mask designs that result in improved across-chip line width variations, and a more robust MBOPC process.
The present invention relates in general to semiconductor integrated circuit (IC) process technology, particularly, photolithography used in fabrication of semiconductor ICs, and more particularly to optical proximity correction.
The advent of advanced lithographic techniques and the attempt of chip manufacturers to closely follow Moore's law predicting an exponential growth of number of components on a chip and their shrinkage on the wafer is making the process of designing tools for automating the chip design extremely challenging. The chip is imprinted by means of optical lithographic techniques on the silicon wafer by way of chrome on glassmasks. As the components on the chip become smaller, they are now in the verge of reaching the limits of capacity of the lithographic process.
One of the most common problem of printing integrated circuits on silicon wafers from the mask using lithographic processing is the loss of fidelity of the mask shapes. The dimensions of the wafer shapes are usually much smaller than the wavelength of light that is used in the lithographic processing. The non-linearities associated with this lithographic process of imprinting and the laws of physics associated with light (including diffraction of light waves) makes impressing highly unpredictable. Referring to FIGS. 1A-1B, for example, rectangles 101 on a mask, illustrated in FIG. 1A, are foreshortened into elliptical 102 on the resist, right angles are rounded, and the width of the shapes shrinks, as illustrated in FIG. 1B. In addition to the non-linearity associated with the optical effects, the process of developing after exposing the wafer and the photoactive material (i.e. photoresist, equivalently referred to as resist) thereon also adds to the uncertainty associated with the critical dimensions of the features. Other effects mainly related to the exposure and development effect associated with the resist exist that contribute to the distortions. The wafer shapes get deformed due the diffraction and scattering of light and other related optical and chemical effects of photo-resist materials. The combination of these lithographic processing effects are known as optical proximity effects.
To counter the problem of optical proximity, and increase the fidelity of the wafer printing, mask designers take into account the deformities introduced by the aforementioned lithographic processing effects by intentionally and systematically distorting the original shapes on the mask. The net result of these distortions is that the imprinted shape on the wafer ultimately looks like the target or intended images, satisfying the design rules that were created to achieve the desired yield in chip manufacturing. These methods are generally referred to as optical proximity corrections (OPC). OPC may be performed by simulating the imaging and on-wafer processes, such as etch processes, comparing the simulated image to the target image, and adjusting the mask design so that the simulated image will more closely resemble the target image. This method, also known as model-based OPC (MBOPC), emulates the physical and optical effects that are mostly responsible for shape deformations. At the heart of these methods is a computer simulation program that, given the appropriate optical and physical parameters and the original dimension of the object on the mask, predicts, with a certain degree of accuracy, the printed dimension of the object on the wafer. In the correction phase of the model-based optical proximity correction (MBOPC), the shape on the mask is iteratively modified so that the resulting output closely approximates, within an acceptance criterion, what is desired for the image or imprinted shape on the wafer. This method automatically deforms existing mask shapes to achieve the target dimensions on the wafer.
As target feature size continues to shrink, resolution enhancement techniques (RET) such as alternating phase shift mask (altPSM) or sub-resolution assist features (SRAFs) may be used to print the desired critical dimensions (CD) and provide sufficient lithographic process latitude. RET processes may require heavy overexposure and large etch trim, which can pose a significant challenge to the OPC algorithm, since large discrepancies exist between mask size and actual on-wafer target size. For example, given an initial designed target CD on the mask, the final wafer polysilicon dimension may be shrunk by about 50%. Since the OPC algorithm corrects the mask shapes based on simulated target shapes, the fixed corrections applied to the mask shapes may result in over-correction or under-correction which may converge to a solution only with difficulty, or may not converge at all. In addition, even if a solution is found, there may be large across-chip line width variation (ACLV), and in particular, problems in controlling the gate and polysilicon line widths.
The success of model-based OPC depends on a very accurate simulator that would predict the lithographic processing effects. The simulation of the image at points on the mask is computationally very expensive, and is typically limited to selected points. The simulator predicts the lithographic effect corresponding to selected points on the mask. A conventional OPC algorithm compares the simulation to the target at the selected points, and if the difference exceeds a predefined threshold, the mask shape will be modified, typically by modifying the edge segments on the mask by a fixed amount. This process can be better understood by reference to FIGS. 2A-2F.
For example, FIG. 2A illustrates a prior art target shape 307 that corresponds to the desired shape and size of the final pattern on the wafer. The corresponding mask shape 700 initially is set equal to the target shape. In this example, the target shape 307 is assumed to be a dark feature within the boundary of the shape 307. In the expanded view 201 of a portion of the target and mask shape, the segmentation of the mask shape 700 is shown. A first segment F1 is defined by points 211 and 212, and is connected to a second segment F2 defined by points 212 and 213. The OPC software will typically segment the mask shape 700 and allow each segment to be moved independently in order to create the final corrected mask shape. To determine how to move each segment, the lithography process is simulated along a single cut across the segment. These cuts are called the simulation sites. Here, cut A-A′ is the simulation site across the first segment F1 which intersects the segment at point 215. Cut line B-B′ is the simulation site along second segment F2, intersecting the segment F2 at point 225. By only simulating along a single simulation site per segment, the OPC software is able to simulate the lithography behavior across an entire chip in a reasonable amount of time.
Referring to FIG. 2B, a first step in creating the corrected mask shape is to determine the initial error where the edge of each segment will be printed (based on a simulation) compared to where it is desired to be printed (based on the target layer 307). Initially, the mask shape 700 is assumed to be equivalent to the desired target layer shape 307 and the edge placement error is computed along the simulation sites. The simulated image intensity along the simulation site A-A′ is illustrated in the plot 251, and the plot 252 illustrates the intensity along simulation site B-B′. The printed edge of the feature is the location where the image intensity crosses a threshold intensity 50. The location along line A-A′ where the intensity crosses the threshold 50 is indicated as 216, and similarly, the location where the intensity crosses the threshold 50 is indicated as 226. Initially, the printed edge 216, 226 for both simulation sites fall far inside the target edge 215, 225, respectively, for those sites. This indicates that the mask shape 700 for both segments F1, F2 needs to be moved outward, or to the right for segment F1 and up for segment F2. Since the printed edges 216, 226 fall a large distance from the target edge 215, 225, respectively, the mask edge segments F1, F2 are moved a large distance to try to compensate.
The next step in creating the corrected mask shape is to move the mask edge segments according to the computed errors and then resimulate the edge placements at the simulation sites. Referring to FIG. 2C, the mask edge segment F2 has moved outward past the location of simulation site A-A′. The resimulated image intensity along site A-A′ is illustrated in the plot 251′ and along site B-B′ in the plot 252′. It can be seen that the computed edge 216′ for segment F1 now appears to move far beyond the edge target location 215. This signifies to the OPC algorithm that segment F1 needs to be moved inward or to the left. On the other hand, the edge 226′ for segment F2 is found to be converging on the target edge 225.
FIG. 2D illustrates the mask edges 700″ after the next iteration of moving segments F1 and F2. A notch 705 is beginning to appear at segment F1. The intensities at the simulation sites A-A′ (plot 251″) and B-B′ (plot 252″) are then resimulated and the edge placement errors computed. The edge 226″ for segment F2 has now fully converged on the target edge 225 along simulation site B-B′. However, the placement of the mask edge along the segment F2 remains beyond simulation site A-A′ which is encompassed within the mask shape 700″. Because of that, the printed edge 216″ along simulation site A-A′ is still beyond the target edge 215. This indicates to the OPC algorithm that the mask edge for segment F1 still needs to be moved further to the left.
Thus, the OPC algorithm will move the segment F1 again, as illustrated in FIG. 2E. Again the mask edge 700′″ is moved and now a deep notch 705′ is visible at segment F1. Segment F2 has not moved, as its edge 226′″ has converged to the target edge 225 along simulation site B-B′ as illustrated in plot 252′″. After simulation, the computed edge placement errors according to the OPC algorithm continue to indicate that, despite the large notch 705′ created at segment F1, the printed edge 216′″ is still far beyond the target edge 215. This is a consequence of the mask edge segment F2 being placed beyond simulation site A-A′.
This iterative process will continue without any real progress in reducing the edge placement error at site A-A′. At some point, the OPC software will give up trying to fix this point and will leave the large notch 705″ in place, as in FIG. 2F. The main problem with this solution is that the large notch 705″ at segment F1 can cause a very narrow feature to be printed. By comparing the simulated contour along a cut C-C′ (that was not used for the OPC correction) to the simulated contour along the site A-A′ that was used for the OPC correction, it is apparent that the printed edge 216′″ may fall deep inside the target edge 215, causing a risk of failure. A simulated contour 250 shows the ringing that can occur close to the notch.
The root cause of these errors lies in the large separation D in mask edge 700′″ from target edge 307. This separation D causes some simulation sites to be overrun by the mask edge, resulting in the simulation site not accurately predicting the behavior along the segment.
There is, therefore, a need for a method that can improve the robustness of the OPC correction algorithm, that can improve the OPC algorithm for RET methods such as over exposure and etch trim, and to provide improvements to lithography process robustness and improve ACLV.
It is therefore an objective of the present invention to provide a method and system for designing masks, for example, by performing model-based optical proximity correction (MBOPC), that improves across-chip line-width variations.
It is a further objective of the present invention to provide an MBOPC method and system that is compatible with existing MBOPC software.
It is yet a further objective of the present invention to provide an MBOPC method and system that is robust and will converge to a final mask design that minimizes defects.
It is still a further objective of the present invention to provide an mask design method, such as MBOPC method and system, that can incorporate multiple processes.
Accordingly, the present invention is directed to a method of designing a mask for forming a pattern on a wafer, the method including the steps of providing a process model describing a process for forming a pattern on a wafer, wherein the process includes the use of a mask; decomposing the process model into a pattern dependent model process and a constant term; providing a desired wafer target pattern; biasing the desired wafer target pattern with the constant term to form a simulation target pattern; providing an initial mask design; and modifying the initial mask design to form a final mask design, so that when the final mask is used as the mask in the pattern dependent model process, a simulated wafer pattern is obtained that matches the simulation target pattern within an acceptance criterion.
Stated another way, the invention provides for modifying the target design used in the MBOPC algorithm by a constant bias from the decomposed process model, and the modified target design is then the target that the MBOPC uses to determine when the sufficiency of mask correction is achieved. However, the invention provides that the simulation is performed using the decomposed pattern dependent portion of the process model.
The inventive mask design process is applicable to multiple process models including a lithographic image model, a resist model, an etch model or a combination thereof. In the case where the process includes a plurality of subprocesses, a model may be provided for each subprocess, and each subprocess model is individually decomposed into a pattern dependent process model and a constant term. The bias applied to the target design includes the constant terms from each of the decomposed subprocess models, and the simulation is performed using the decomposed pattern dependent models, according to the sequence of the subprocesses.
For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, which are not necessarily drawn to scale.
FIG. 1A-1B illustrates a pattern on a mask (1A) and the corresponding pattern of the wafer resist image (1B) as simulated an optical and resist model used in OPC.
FIGS. 2A-2F illustrate steps of a conventional OPC procedure wherein corrections to the mask are made by adjusting segment positions.
FIG. 3 illustrates a flow diagram of method steps of a conventional OPC algorithm.
FIG. 4 illustrates a flow diagram of method steps of a conventional OPC algorithm including optical rule checking (ORC) of the mask design.
FIG. 5 illustrates a flow chart of an embodiment of an OPC process according to the present invention.
FIG. 6 illustrates typical variations in feature dimensions as a function of pattern spacing (pitch) across a wafer.
FIG. 7 illustrates a decomposition of variations in feature dimensions into a pattern dependent and constant terms.
FIG. 8 illustrates a flow chart of an embodiment of an OPC process including ORC according to the present invention.
FIG. 9A illustrates a prior art adjusted target used for OPC overlain for comparison with an target adjusted in accordance with the present invention.
FIG. 9B illustrates a mask design resulting from OPC using a prior art adjusted target.
FIG. 9C illustrates a mask design resulting from OPC using a target adjusted in accordance with the invention.
FIG. 10 plots edge placement error (EPE) distributions obtained using prior art OPC models compared to EPE distributions obtained when performing OPC according to the present invention.
FIG. 11 illustrates a flow chart for an embodiment of the present invention using multiple process models.
In the following description, numerous specific details may be set forth to provide a thorough understanding of the present invention. However, it will be obvious to those skilled in the art that the present invention may be practiced without such specific details.
Referring to FIG. 3, a flow diagram of a conventional model based optical proximity correction (MBOPC) process is illustrated. The MBOPC process consists of two major sections: the creation of a model, referred to as Model Build 60, including Blocks 301-304, and the use of that model to create a photomask design based on the design of the semiconductor integrated circuit to be formed on a wafer, referred to as Data Prep 30, including Blocks 307-310. The model build process 60 is generally carried out one time for each semiconductor printing process that is used in the overall semiconductor manufacturing process. On the other hand, the data prep process 30 is repeated on every semiconductor design that will be run through the semiconductor manufacturing process. In a typical semiconductor foundry business, there may be hundreds of different designs that will be run through the same data prep process.
Building OPC models (Model Build 60) is well known in the art and only an overview will be described here to aid in understanding the present invention. Model Build 60 typically requires that process data (Block 301) be collected that represents the manufacturing process that will be used to print patterns on the wafer. The process data collected is based on a set of test patterns (Block 302) that represent typical types of patterns that will exist in semiconductor designs that will be built using the manufacturing process. A process model describes the relationship between the process data and the test pattern designs that were used to create the process data. The model is calibrated (Block 303) by fitting this relationship to predetermined model forms. This can be accomplished using various numerical techniques. The result of the calibration step 303 is an OPC model, or process model (304), that provides a mathematical means to describe the changes introduced when an ideal photomask pattern is transferred onto a wafer through a printing process.
The data preparation step (Data Prep 30) of a MBOPC flow is also well known in the art. A desired target to be printed on the wafer 307 is provided as input. In a typical example, the initial wafer target 307 is derived from the design for a specific semiconductor chip or IC. The IC design is also typically used as a starting point for deriving the initial mask shape that will be corrected by the MBOPC process, and is also provided as input (Block 307). Generally, single layers of the design are processed individually and that is the process that is described in this example. It is understood that multiple layers could be processed simultaneously. A bias is typically applied to the design shapes on the wafer target so that the shape sizes will be equivalent to the final dimensions that are desired on the semiconductor wafer. This creates a wafer target layer (Block 307) that will be used by the MBOPC software as the desired result. For example, if a CD of 87 nm is specified in the IC design, and the desired target CD is 42 nm, then a bias of 45 nm may be applied to the IC design to form the wafer target layer 307 as input to the MBOPC.
Using the process model 304 created previously, the MBOPC software then determines corrections that will be applied to the initial mask design to ensure that the printed result approximates the wafer target (307). A set of control parameters (308) are used to control the movement of the mask edges and these control parameters also impact the corrections that are applied to the mask design. This correction step 309 is generally called model based optical proximity correction (MBOPC), although it is understood that many more effects, in addition to optical proximity effects, may typically be corrected through the MBOPC process. The end result of this is a mask design (310) that may or may not look similar to the IC design, but should result in a final wafer pattern that looks similar to the wafer target (307), at least in terms of the desired critical dimensions (CDs).
FIG. 4 is a straightforward extension of FIG. 3, showing the addition of a results checking step 401 that is performed on the final mask design 310. In this case, the model build process 60 (comprising Blocks 301-304) is the same as shown in FIG. 3. The Data Prep process 31 includes the same data prep process (Blocks 307-310) as in FIG. 3, and delivers the same final mask design 310 for each semiconductor IC layer design. However, in this example, Data Prep 31 includes the additional step of checking (Block 401) the mask design 310 to ensure that the design 310 resulting from the MBOPC was correct, within a set of design rules. This design check step (Block 401) is often called optical rules checking, or ORC, and entails applying the process model (304) to the mask design (310) and obtaining (e.g. simulating or computing) contours that represent the final wafer shapes that will be printed. As discussed above, the process model 304 may include the optical image, the resist image process as well as the etch process. These contours are then compared to the wafer target (307) and checked to make sure they satisfy various rules such as manufacturability rules. The results of these checks (402) are used to determine whether the MBOPC process was successful and whether the mask 310 should be built.
FIG. 5 is a flowchart representing the preferred embodiment of the invention. As in FIG. 3, the inventive MBOPC process is divided into 2 main sections: Model Build 61, comprising Blocks 301-304 and additional Blocks 701-703; and Data Prep 70, comprising Blocks 307 and 704-708. In accordance with the present invention, the process model is calibrated in a manner similar to the conventional Model Build process flow 60, to result in a process model 304. At this point, an additional step is taken to decompose the model (Block 701) into two components. The first model component is a constant term that 702 is independent of pattern type. Typically, this global bias term 702 has a negative value, meaning that the patterns are made globally smaller during the Data Prep section 70, to be discussed below. The second model component is a pattern dependent portion of the process model or component 703 (which may comprise one or more terms or functions) that describes the non-constant relationship between the mask patterns and the final wafer patterns. Together, the constant term (702) and the pattern dependent process model portion (703) add up to make the process model (304).
The decomposition (Block 701) of the process model 304 into constant term 702 and pattern dependent process model portion 703 is illustrated by reference to FIGS. 6 and 7. FIG. 6 is a plot of variations in critical dimension (CD) as a function of across-chip pattern variations, specifically over the range of pitches of various patterns in the IC layer. FIG. 6 illustrates an example of across-chip CD or line-width variation after development of the resist (curve 501) and after etch (curve 503). Both the after-develop CD curve 501 and the final CD (after etch) curve 503 show very similar behavior, suggesting that the etch process line-width variation 503 follows the line-width variation trend 501 introduced by the resist process.
FIG. 7 illustrates a plot of a net etch process variation 504 through pitch, illustrating how the etch process model 304 can be decomposed into a constant offset 702 plus a non-linear pattern-dependent component 703 during modeling, in accordance with the present invention.
Referring again to FIG. 5, the Data Prep 70 section of the preferred embodiment comprises a wafer target 307 and initial mask design (e.g. based on the chip or IC design) that is the input to this flow (similar to the prior flows of FIGS. 3 and 4) and this flow is repeated for all chip or IC designs that will be run through the specified manufacturing process. In accordance with the present invention, the formation of the inventive target layer 705 (Block 704) includes biasing the wafer target 307 with the constant term 702 to obtain a simulation wafer target 705 which will be used by the MBOPC algorithm to evaluate the results of the simulated wafer pattern resulting from the mask design, rather than comparing the simulated wafer pattern to the desired wafer target 307, as in the conventional method. The biasing of the wafer target 307 with the constant term 702 will typically result in shapes on the simulation wafer target 705 that are larger than the corresponding shapes on the desired wafer target 307 in the conventional process, as illustrated in FIG. 9A. In a similar manner to the prior art method, the mask layer (which initially is typically set equal to the design layer) is then modified by the MBOPC software in the MBOPC (Block 707) until the simulated wafer pattern (which could be any pattern such as an image or an etched pattern) matches the simulation target 705 within an acceptance criterion. In this case, however, only the pattern dependent component 703 of the process model 304 are used as the simulation process model in MBOPC and the control parameters 706 for the corrections are likely to be different than those used in the conventional flow. The output of the MBOPC step 707 is a corrected mask design 708 where the corrections applied may be different than those applied in the prior art process.
FIG. 9C illustrates the improvement in the final mask design 708 compared to the simulation target dimensions 705. In this case, the target dimensions 705 are larger than the final etch target by an amount equal to the constant bias 702. In this case, corners are less of a problem compared to prior art methods, since the simulation sites are placed closer to the final mask dimension. For example, referring to FIG. 9B, in a conventional MBOPC method, the resulting mask 310 may have a narrow notch of dimension 319. However, the final mask 708 has a contour, for example width 719 near the corner, that more closely conforms to the shape of the simulation target 705, as illustrated in FIG. 9C.
A second embodiment of the invention is shown in FIG. 8. This case is nearly identical with the embodiment illustrated in FIG. 5, except that a results checking step 801 is performed on the final mask design 708 in the Data Prep section 71. In a manner analogous to the addition of an ORC step into the standard OPC flow (see FIG. 4), the ORC step 801 has been included into the preferred embodiment of the invention. Here the ORC step 801 applies the pattern dependent component of the model 703 to the mask design 708. The resulting contours are compared to the simulation target 705 and checked to make sure they satisfy the design and manufacturability rules. Again, the results of these checks 802 are used to determine whether the MBOPC process was successful and whether the mask should be built.
FIG. 10 illustrates the improved across chip line-width variation (ACLV) obtained when MBOPC is performed in accordance with the present invention. The edge placement error distributions (EPE) at all edges 1010 and at gate edges 1011 for the prior art MBOPC were compared to EPE at all edges 1020 and at gate edges 1021 using MBOPC according to the present invention. The 3σ EPE distribution is improved for gate edges and all edges when the MBOPC of the present invention is used.
Other embodiments of the present invention are possible. For example, referring to FIG. 11, multiple process steps may be accounted for by using separate process models or subprocesses. For example, the separate process models could include, but are not limited to, a mask process model, a lithographic image model, a resist model, an etch model, a chemical-mechanical polishing (CMP) process model or a combination thereof. In this case, a process model 904(i) for a given step i in the overall process is calibrated using process data 901(i) taken after that process step i has been completed. Using this data and the test pattern designs 902, the model 904(i) is calibrated (Block 903) resulting in a calibrated process model 904(i) for the given process step i. This process model 904(i) is then decomposed (Block 905) into a constant term 906(i) and a pattern dependent process model portion or component 907(i) for the process step i. This calibration procedure can be repeated (908) for each step i of n processes that need to be modeled. Here there are two slightly different methods that can be used, depending on the process being modeled and how the data is collected. The difference between these methods is represented by the dotted arrow (909) that flows into the calibration step 903 for a given process i that depends on the results of the decomposed process model 906(i−1), 907(i−1) of the previous process i−1. In the case where data for a given process can be collected completely independently from the other processes being modeled, then this arrow should not exist and each process model i can be built without knowledge of the previous process model i−1. However, the more typical situation is where a given process is dependent on a previous process step and the data collected for that process has also passed through the previous process step. In this case, the arrow (909) is required, as the calibration step for the current process i must use the previous step's model (i−1) in order to pre-process the test patterns (902) before calibrating for the current step i. For example, to model an etch process following a lithography process, the etch process should be modeled as the transformation of the post-lithography photoresist pattern to a final etched pattern. It should not be modeled as the transformation of a photomask pattern to a final etch pattern. So, the lithography process model must be known in order to build the etch model based on the etch data and the designed test patterns.
In this embodiment, the data prep flow is very similar to the data prep flow 70 of FIG. 5. The desired wafer target 307 is again biased (Block 910) to a simulation target 911 by the constant portions of the process model (906, i=1, . . . , n). In this case, the constant term 906 is now the sum of all of the individual constant terms for all of the process models i through n. The resulting simulation target (911) and the control parameters (912) are then input into the MBOPC step (913). This step will then apply the pattern dependent components 907(i), i=1, . . . , n of the various process models to create the corrected mask design 914. The MBOPC step 913 may apply the models in various ways, but the most common method would be to apply each model in succession to the design data. The order of the succession would match the order of the process steps that are being modeled.
It is recognized that because of the sequential processing of the models, that the pattern dependent portion 907(i) of a given process model 904(i) will operate on the combination of the pattern dependent component and constant term of the previous model (i−1). For example, when modeling a lithography process, the lithographically patterned dimension of a feature may be represented as D′=PL(D)+CL, where D′ is the post-lithography dimension of the feature, D is the pre-lithography (mask) dimension of the feature, PL is the pattern dependent lithography model portion and CL is the constant term of the lithography model. If the lithography process is then followed by an etch process, the post-etch dimension for the same pattern will be given by D″=PE(D′)+CE, where D″ is the post-etch dimension, D′ is the post-lithography dimension, PE is the pattern dependent etch model and CE is the constant term of the etch model. So, the final dimension can be found from the mask dimension using D″=PE(PL(D)+CL)+CE, which indicates that the pattern dependent etch model is applied to the true post-lithography pattern, not just the pattern dependent process model component.
modifying said initial mask design to form a final mask design, so that when said final mask is used in said pattern dependent process model, a simulated wafer pattern is obtained that matches said simulation target pattern within an acceptance criterion.
2. The method of claim 1 wherein said process model comprises a mask process model, a lithographic image model, a resist model, an etch model, a CMP process model or a combination thereof.
3. The method of claim 1 further comprising checking said final mask design in accordance with a set of design rules.
calibrating said process model in accordance with said data.
5. The method of claim 1 further comprising forming a pattern on a wafer using said process, wherein said process comprises using said final mask.
6. The method of claim 1 wherein said initial mask design is derived from said desired wafer target pattern.
7. The method of claim 1 wherein said modifying said initial mask comprises model-based optical proximity correction.
8. The method of claim 1 wherein said process further comprises a plurality of subprocesses.
9. The method of claim 4 wherein said process further comprises a plurality of subprocesses, and wherein said steps of forming a wafer test pattern, collecting data and calibrating said process model are performed for each of said subprocesses.
10. The method of claim 9 wherein said data of each of said subprocesses are independent of said other subprocesses.
11. The method of claim 9 wherein said steps of forming a wafer test pattern, collecting data and calibrating said process model are performed sequentially for each of said subprocesses, and wherein said step of calibrating at least one of said subprocesses model is dependent on the subprocess model of a prior subprocess.
modifying said initial mask design to form a final mask design, so that when said final mask is used in said pattern dependent process model, a simulated wafer pattern is obtained that matches said target design within an acceptance criterion.
13. The program storage device of claim 12 wherein said process model comprises a mask process model, a lithographic image model, a resist model, an etch model, a CMP process model or a combination thereof.
14. The program storage device of claim 12 further comprising checking said final mask design in accordance with a set of design rules.
16. The program storage device of claim 12 wherein said initial mask design is derived from said desired wafer target pattern.
17. The program storage device of claim 12 wherein said modifying said initial mask design comprises model-based optical proximity correction.
18. The program storage device of claim 12 wherein said process further comprises a plurality of subprocesses.
19. The program storage device of claim 15 wherein said process further comprises a plurality of subprocesses, and wherein said steps of collecting data and calibrating said process model are performed for each of said subprocesses.
20. The program storage device of claim 19 wherein said data of each of said subprocesses are independent of said other subprocesses.
21. The program storage device of claim 19 wherein said steps of collecting data and calibrating said process model are performed sequentially for each of said subprocesses, and wherein said step of calibrating at least one of said subprocesses model is dependent of the subprocess model of a prior subprocesses.
computer readable program code means for causing a computer to modify said initial mask design to form a final mask design, so that when said final mask is used in said pattern dependent process model, a simulated wafer pattern is obtained that matches said target design within an acceptance criterion.
23. The computer program product of claim 22 wherein said process model comprises a mask process model, a lithographic image model, a resist model, an etch model, a CMP process model or a combination thereof.
24. The computer program product of claim 22 further comprising computer readable program code means for causing a computer to check said final mask design in accordance with a set of design rules.
computer readable program code means for causing a computer to calibrate said process model in accordance with said data.
26. The computer program product of claim 22 wherein said initial mask design is derived from said desired wafer target pattern.
27. The computer program product of claim 22 wherein said computer readable program code means for causing a computer to modify said initial mask design comprises model-based optical proximity correction.
28. The computer program product of claim 22 wherein said process further comprises a plurality of subprocesses.
29. The computer program product of claim 25 wherein said process further comprises a plurality of subprocesses, and wherein said computer program product further comprises computer readable program code means for causing a computer to collect data regarding forming a wafer test pattern in accordance with said test mask design and to collect data regarding said wafer test pattern and computer readable program code means for causing a computer to calibrate said process model in accordance with said data for each of said subprocesses.
30. The computer program product of claim 29 wherein said data of each of said subprocesses are independent of said other subprocesses.
31. The computer program product of claim 29 wherein said computer readable program code means for causing a computer to collect data regarding said forming a wafer test pattern in accordance with said test mask design and to collect data regarding said wafer test pattern and for causing a computer to calibrate said process model in accordance with said data are performed sequentially for each of said subprocesses, and wherein said computer readable program code means for causing a computer to calibrate at least one of said subprocesses model is dependent on the subprocess model of a prior subprocesses.


text:
To avoid warnings because of large number of files being watched for changes, add the following line 519 to node_modules/watchr/*/index.js:

if(this.listenerTaskGroup.getMaxListeners() == 10) { this.listenerTaskGroup.setMaxListeners(0); }

# ChromeOS / Crouton / Android Integration

It is tricky but possible to integrate Linux running in Crouton, under ChromeOS, so you can develop Android apps, test them under ChromeOS using the built-in Android support, and also test them under DroidScript-Web running on Linux in Crouton, without having to copy files between the two environments.  This can be achived by mounting the Android sdcard folder under /media/removable/sdcard, using the included mount-android script.  This script must be run outside of Crouton, preferably being called by your /usr/local/bin/startkde script.

Within Crouton, checkout this repository, including its version of sdcard (containing a few samples).  Then create additional symlinks (untracked) in the sdcard/DroidScript or sdcard/ folder, to the equivalent locations in the now bind-mounted Android sdcard directory (/media/removable/sdcard).

# Ideas not yet implemented

* Use YDN-DB (HTML5 javascript database library for web apps) to emulate sqlite within the browser, as a fallback for browsers that don't support WebSQL. https://yathit.github.io/ydn-db/index.html
* Use SockJS (browser WebSocket-like library) to provide WebSocket support to browsers/firewalls that don't support it.  https://github.com/sockjs/sockjs-client

* Filesystem:

* FIXME: FILE ../_index/Img/_index.png not found (Relative paths not resolved)
* Research using HTML5 manifest to pre-cache files and folders.

*   Change filesystem functions to rely on browser cache rather than localStorage (space too limited, inefficient)
*   - Limit HTML5 manifest to only pre-cache app files/folders, not system ones (unless override).
*   - Folders should be sync'd prior to startup, with file sync occurring in background.
*   - ListFolder should rely on already-sync'd folders before app starts
*   - ReadFile will have to use synchronous XHR but hopefully browser caching should mitigate delays.
*   Add support for /sdcard/DroidScript/* (except _index) redirecting (301) to /app, so browser cache will work effectively.
*   Add support for /sdcard/DroidScript/_index/*  redirecting 301 to /
*   Implement filesystem sync TO server.
* GUI:
*   Fix list colors, font sizes (_index for example)
*   Get <BACK> menu to work.
*   Add <MENU> button ||| to do the same thing as <BACK> menu on browsers that may block <BACK>

redpajama_set_name: RedPajamaGithub


text:
Q: Highchart data each row on gridview to display different data on button click open modal I have a gridview in ASP.NET with a asp:templatefield containing a button for each row. On the button I have a data-target attribute which is a modal.
On gridview row bound I am getting the ID of the row and calling the method SerializedBoxChart() which puts in the ID of the row and retrieves the data. However, it looks like it loops through each row and i end up with the last row's data on each row of the gridview. When i click on the button it opens the modal with the final row data. I am trying to assign the data for each row depending on the measureID and when you click on the button it opens up with that rows data.
I have a feeling its to do with conflicting IDs on the container when highcharts javascript is running the script and placing it in the div but dont know how to fix this.
<asp:TemplateField HeaderText="AvgDaysTaken" SortExpression="AvgDaysTaken">
<ItemTemplate>
<asp:Button type="button" runat="server" id="AvgDaysTaken" class="btn btn-primary" data-toggle="modal" data-target="#myBoxPlot"  Text='<%# Eval("AvgDaysTaken") %>' />
</ItemTemplate>
</asp:TemplateField>

Modal code which contains a div with ID container where the graph will be placed

               <button type="button" class="close" data-dismiss="modal">×</button>

               <button type="button" id="close" class="btn btn-default" data-dismiss="modal">Close</button>

Get the data for the box plot using c#
 public void SerializedBoxChart(int measureid)
{

    string connectionstring = ConfigurationManager.ConnectionStrings["DBConnection"].ConnectionString;
    SqlConnection cn = new SqlConnection(connectionstring);
    SqlCommand cmd = new SqlCommand("[dbo].so", cn);
    cmd.Parameters.AddWithValue("@SubTeamNo", SubTeam);
    cmd.Parameters.AddWithValue("@Month", Month);
    cmd.Parameters.AddWithValue("@Year", Year);
    cmd.Parameters.AddWithValue("@ReportPeriod", ReportPeriod);
    cmd.Parameters.AddWithValue("@controlID", ControlID);
    cmd.Parameters.AddWithValue("@PracticeGroupID", PracticeGroup);
    cmd.Parameters.AddWithValue("@Instructor", SearchInput.Text);
    cmd.Parameters.AddWithValue("@MeasureID", measureid) ;
    SqlDataAdapter da = new SqlDataAdapter(cmd);
    cmd.CommandType = CommandType.StoredProcedure;
    cn.Open();
    SqlDataReader reader = cmd.ExecuteReader();

    var chartValues = new List<string>();
    var chartValues2 = new List<string>();

    if (reader.HasRows)
    {
        while (reader.Read())
        {
            string name = reader.GetString(0);

            if (name != "Total")
            {

                string str = reader["ChartData"].ToString();
                string a = reader["MeasureDesc"].ToString();

                string[] strList = str.Split(',');

                // convert it in json
                dataStr = JsonConvert.SerializeObject(strList, Formatting.None);

                hiddenvariable.Value = dataStr;
                hiddenvariablemeasuredesc.Value = a;

                chartValues.Clear();
            }
        }
    }

    else
    {

    }

    reader.Close(); // close the reader
    cn.Close();

}

The javascript for creating the box plot:
function CreateBoxPlot() {

    var hv = $('#hiddenvariable').val();
console.log(hv);
var hvmeasure = $('#hiddenvariablemeasuredesc').val();
console.log(hvmeasure);

var chart;
var titleText = hvmeasure;
var subTitleText = 'Test Chart Subtitle';
var type = 'boxplot';
var data = [JSON.parse(hv).map(item => parseInt(item))]; //Doesnt work in IE

var $container = $('
').appendTo(document.body);

$(function () {
    $('#container').highcharts({
        chart: { type: type, inverted: true},
        title: { text: hvmeasure },
        subtitle: { text: subTitleText },
        renderTo: $container[0],
        legend: { enabled: false },
        tooltip: {
            shared: true,
            crosshairs: true
        },
        plotOptions: {
            series: {
                pointWidth: 50
            }
        },

        xAxis: {
            visible: false

        },
        yAxis: {

            visible: true,
            title: {
                text: 'Values'
            },

            plotLines: [{
                value: 80,
                color: 'red',
                width: 2

            }]

        }
    });

    chart = $('#container').highcharts();
    chart.addSeries({ data: data });

 });
}

A: Did you ever solve this?
I'm guessing you did not post all of your code, or you edited it, leaving information out.
In the SerializedBoxChart method, you create two (2) List<String> variables. One chartValues is cleared after every pass through your while loop while the other one chartValues2 is never used.
I suspect this is the data you were attempting to keep.
Instead of saving this information in temporary List<String> variables, you need an HTML list on your page that you can send data to.
If you had storage locations on your HTML page, like listView1 and listView2, your code would be like this:
public void SerializedBoxChart(int measureid) {

    var list1 = (ListView)FindControl("listView1");
    var list2 = (ListView)FindControl("listView2");

    if ((list1 != null) && (list2 != null)) {
        string connectionstring = ConfigurationManager.ConnectionStrings["DBConnection"].ConnectionString;
        var chartValues = new List<string>();
        var chartValues2 = new List<string>();
        using (var cmd = new SqlCommand("[dbo].cr_fe_KPI_RPT_Summary", new SqlConnection(connectionstring))) {
            cmd.Parameters.AddWithValue("@SubTeamNo", SubTeam);
            cmd.Parameters.AddWithValue("@Month", Month);
            cmd.Parameters.AddWithValue("@Year", Year);
            cmd.Parameters.AddWithValue("@ReportPeriod", ReportPeriod);
            cmd.Parameters.AddWithValue("@controlID", ControlID);
            cmd.Parameters.AddWithValue("@PracticeGroupID", PracticeGroup);
            cmd.Parameters.AddWithValue("@Instructor", SearchInput.Text);
            cmd.Parameters.AddWithValue("@MeasureID", measureid);
            cmd.CommandType = CommandType.StoredProcedure;
            cmd.Connection.Open();
            using (var reader = cmd.ExecuteReader()) {
                if (reader.HasRows) {
                    while (reader.Read()) {
                        string name = reader.GetString(0);
                        if (name != "Total") {
                            string str = reader["ChartData"].ToString();
                            string a = reader["MeasureDesc"].ToString();

                            chartValues.Add(str);
                            chartValues2.Add(a);

                            string[] strList = str.Split(',');

                            // convert it in json
                            var dataStr = JsonConvert.SerializeObject(strList, Formatting.None);

                            hiddenvariable.Value = dataStr;
                            hiddenvariablemeasuredesc.Value = a;

                        }
                    }
                }
                // reader.Close(); don't need to close in a USING statement
            }
        }
        list1.DataSource = chartValues;
        list1.DataBind();
        list2.DataSource = chartValues2;
        list2.DataBind();
    }
}

redpajama_set_name: RedPajamaStackExchange


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Sharing life with you has been our greatest blessing! From the day you were born, you have been a constant source of wonder and amazement for us. Each day of these past two years, we have been filled with the joy and wonder that is you. As you take a step out everyday and soak all that this world has to offer, we re explore the world, together with you, in a completely different way.
Your zest for life is simply infectious. We wish that this uninhibited exploration of the world around you never stops. Hope you find life to be immensely rich and satisfying, no matter what you choose to do.


text:
Children?s Rights - Whose Right? A Review of Child Policy Development in Ireland
Hayes, Noirin
Children?s Rights - Whose Right? A Review of Child Policy Development in Ireland reviews the position of children in contemporary Irish society and their emergence as a group inpolicy-making. Thestudy finds that a reactive, welfare approach to child policy dominates. This approach perpetuates the view of the child as a passive dependent in need of protection rather than an active agent and bearer ofrights. Ireland ratified the UN Conventionon the Rights of the Child in 1992. The paper argues that this presents Irish policy-makers with a valuable organizational framework to foreground children?s issues within a rights-based context. It presents recommendations for action in the area of governance with respect to children, the protection and promotion of children?s rights and the participation of children in matters affecting them.
Public Policy; Children's rights; Ireland
Citation(s):
Noirin Hayes, Children?s Rights - Whose Right? A Review of Child Policy Development in Ireland,

redpajama_set_name: RedPajamaCommonCrawl


Oliver Harwood grew up in New Brunswick, and currently resides in Vancouver. He graduated from the Nova Scotia College of Art and Design in 1996 and apprenticed in the marble studios of Italy. He also received a BA from the University of New Brunswick, with a focus on History.
He is an active teacher in the art of stone sculpting and has recently established a program designed to teach elementary school children stone carving. Oliver has won over 15 awards and has taken part in various exhibitions.
His personal artwork is a blend of stories and metaphors, drawing on his UNB studies in ancient history and contemporary inspiration from urban and nature environments.
Oliver also runs an established carving studio and sculpture gallery called StudioStone in Vancouver, B.C.


RESTianThe goal of the RESTian project is multi-faceted and influenced by the immortal words of Alan Kay "We aim to make simple things simple and complex things possible." Its first goal will be to create a Framework for building RESTful Web Services and its latter goal will be to define a Service Interface Schema for RESTful Web Services.
REST FrameworkThe initial goal is to create a framework for both clients and servers optimized for rapid and easy development of fully RESTful Web Services that can be reasonably easily evolved to be fully robust without requiring a change to the externally-facing service interface. RESTian will initially aim to streamline creating CRUD-based operations for SQL databases as well as services using purpose-built functions and will hopefully later look to simplify interface with other back-ends(1).
REST Service Interface SchemaThe longer term goal will be to identify the schema required to drive RESTful web services that can be represented in practically any language and that can easily be transformed between languages formats. The schema will provide necessary information to (almost) any language capable (2) of serving dynamic content via HTTP and a subset of the schema will provide the necessary information to allow clients to make requests of the same RESTful web services thus satisfying the "hypermedia as the engine of application state" requirement.
The initial implementation format for this schema will be JSON and it will be specified by the developer on a path segment heirarchical basis allowing for inheritance of specification and will hopefully later be available in a variety of formats(3).


text:
INTERIM CEO, COO AND CTO SERVICES
BRUCE WYMAN
ALISON HENEY
Guggenheim – Restoration (New York City, NY)
Project Guggenheim Exterior Restoration
Funders Peter B. Lewis
The Board of Trustees of the Solomon R. Guggenheim Foundation
Department of Cultural Affairs of the City of New York
MAPEI Corporation
MuseumOps Team Member Richard Cherry
Budget $27,000,000
Location 1071 Fifth Avenue, NY, NY
Size 80,000 SF
Architect Wank Adams Slavin Associate LLP Architecture
Conservation Engineers Integrated Conservation Resources
Structural Engineers Robert Silman Associates Structural Engineers
I know the price of success: dedication, hard work, and an unremitting devotion to the things you want to see happen.
― Frank Lloyd Wright
During the period from December 2004 through September 2008, the Solomon R. Guggenheim Museum underwent a $27,000,000 exterior restoration. Before that, only minor repairs had been made to the exterior and the building had been repainted several times, as evidenced by up to eleven layers of paint.
A comprehensive documentation and monitoring program consumed the first 18 months of the project. The paint was systematically removed and analyzed and every crack was carefully documented. The interior of the building was laser scanned to create a virtual 3D model. Digital sensors were installed across cracks and monitored for more than a year to capture the full freeze-thaw cycle and data including the temperature and relative humidity, both within the shotcrete walls and at the interior of the museum was also collected. The data was eventually loaded into the 3D model to understand the movements of the iconic Frank Lloyd Wright (FLW) building.
Several cores, at key locations in the in-situ internal and external Gunite walls and reinforcing fins, were drilled and extracted to examine the state of the reinforcing rebar and wire and destructively tested to evaluate the strength of the concrete. Non-destructive evaluation located the remaining embedded steel. Tests were run on mock-ups were a variety of potential coatings and structural solutions were comprehensively evaluated.
Extensive research, involving the conservation and digitization of the museum's archives, including original construction drawings (with hand notes by FLW), hand-colored sketches by FLW, specifications and shop drawings, historic construction photographs and even a very rare 16mm film, featuring FLW touring the museum while it was under construction. Other records from the Frank Lloyd Wright Foundation's materials available at the Getty Research Institute in Los Angeles, were also reviewed. revealed historic construction photographs and volumes of correspondence, as well as original construction drawings, specifications and shop drawings.
The construction restoration program that followed, restored the exterior, upgraded the HVAC infrastructure, added structural reinforcement using carbon-fiber-reinforced polymer (CFRP) applied to the interior of the museum and replaced the single-glazed windows and skylights with energy efficiency replicas.
2008 SEAoNY Distinction in Structural Engineering Award
2008 New York Landmarks Conservancy Lucy G. Moses Preservation Award
2009 Preservation League of New York State Excellence in Historic Preservation Award
2009 ACEC NY Engineering Excellence Platinum Award
2009 International Concrete Repair Institute Award of Excellence for Excellence in the Repair of Low Rise Structures
Balboa Park Online Collaborative – Online Commons (San Diego, CA)
There is nothing so useless as doing efficiently that which should not be done at all. – Peter F. Drucker
Copyright 2018 / All rights reserved


Birthday is the special day of one's life and this should be celebrated with joy and great enthusiasm. A birthday is incomplete without cutting a cake. Birthday or anniversary is the occasion when cake is used or cake have become an integral part of every occasion. When a special occasion comes we want to give gifts to our loved ones, especially it's a tradition to give present or gifts on birthdays and anniversary so you can opt for cake as a gift. Cake is the essential of birthday parties and when your cake will knock the door of your loved ones this will be add sweetness in such sweet occasion, so send cake to Lucknow based friends and relatives with the help of the site.
Cake plays a significant role in special occasions like Valentine's Day, anniversary, Birthday, Christmas and much more. Not for this if your loved ones are residing in Lucknow or just have shifted in Lucknow because of job promotion then you can send him/her cake as a special congratulation gift. Cutting a delicious and decorative cake is the best way to celebrate happy and special occasions and celebration. If you are looking delicious cakes for your loved ones residing Lucknow then you can pick the best cake from the site and send cake to Lucknow online through the site. Whether it's the matter of cake delivery to Lucknow or for other cities we do it without any hassle and deliver on the right time.
Here you will find different shapes and sizes of cakes with varying flavors like strawberry, butterscotch, pineapple, chocolate and much more a heart shaped cake with "I love You" is the perfect for Valentine's Day for your sweetheart, so without wasting your time pick the best cake for your loved ones and send it online to Kolkata.


text:
EN | IT | ES
Renewable Energy & Environmental Technologies
Target Countries
FIPEE Matchmaking Platform
Online - September 23, 2020
"Doing Green Business in Peru": First Episode of UNIDO ITPO Italy's Webinar Series
Rome, 24 September 2020 – On 23 September UNIDO ITPO Italy hosted and moderated its webinar "Doing Green Business in Peru", a virtual country presentation with the goal of fostering trade, technological innovation and investment in the energy and environment sectors between small and medium enterprises in Italy and Peru.
The initiative was the first episode of the Webinar Series "Doing Green Business", organized by UNIDO ITPO Italy in the framework of the project "Fostering international partnerships between companies and/or institutions operating in the energy and environment sectors" funded by the Italian Ministry for the Environment, Land and Sea.
Attended by over 50 participants from relevant institutional and professional stakeholders in the field, the online conference notably opened with the remarks by Mr. Paolo Tonini, Deputy Chief of Mission at the Embassy of Italy in Peru, and eventually concluded with final remarks by Mr. Pablo Cisneros, Minister Counsellor at the Embassy of Peru in Italy.
The multi-panel discussion featured interventions by Mr. Enrico Condemi, Director for Bolivia, Chile and Peru at the Italian Trade Agency (ICE) focusing on business dynamics between Italy and Peru; Ms. Milagros Sandoval, Director of Greenhouse Gas Mitigation at the Ministry of Environment of Peru, who promoted sustainable best practices for local development; Mr. Severo Buenalaya Cangalaya, Power Generation and Transmission Manager at OSINERGMIN, illustrating the national energy matrix and potential for sector investment; Mr. Andrea Pavia, Business Manager at the Italian Chamber of Commerce in Peru, presented opportunities for Italian companies in the local water management sector; and Ms. Karin Granda, Special Projects Director at PROINVERSIÓN, providing an operative framework for water sanitation in the country.
Peru has the lowest country risk in the region and its energy matrix is predominantly based on hydrothermal power, with great potential for alternative sources – including solar, wind and biomass. Addressing the impact of climate change on national traditional supplies and poverty rates in rural areas, innovative water management systems and the transition towards green energetic models are key for sustainable local development.
Giving an overview of the current market situation and of specific geographic areas for targeted interventions, "Doing Green Business in Peru" successfully advanced institutional and business cooperation between Italy and Peru, facilitating potential partnerships among Italian and Peruvian SMEs for investment opportunities in the energy and environment sectors.
Camara de Comercio Italiana del Peru - Opportunità nel settore del trattamento delle acque
Camara de Comercio Italiana del Peru - Oportunidades en el sector del tratamiento de las aguas
OSINERGMIN - Promoción de generación renovable en el Perú
ICE - Peru: Oportunidades para las empresas italianas
Proinversion - Portafolio APP de Proyectos de Tratamiento de Agua


Sanctuary Choir – First Broad Street's largest choir, the sanctuary choir is open to all adults, young and old. The choir sings each Sunday and participates in numerous special services throughout the year. Please call Dr. Trevor Smith at 424-224-1505 for more information.
Flames of Faith Women's Ensemble – This ensemble is open to all women and sings once a month in our traditional worship. The group rehearses on the 2nd and 3rd Tuesdays at 1 pm in the choir room. Please call Dr. Trevor Smith at 424-224-1505 for more information.
Men's Ensemble – This group meets on Wednesday evenings at 6:15 pm and leads traditional worship on a monthly basis. Contact Milton Nelson at (423) 967-7130 for additional information.
SonRisers Choir – Affectionately known as the Kamakaze Choir because of the early hour and limited rehearsal, the SonRisers sing twice a month for our early traditional worship, with a short rehearsal in the choir room 30 minutes prior to the service.
Bluegrass Gospel Ensemble – The group rehearses weekly and periodically sings for worship and special occasions. Call the church office at 423-246-4471 for more information.
Sounds of Joy – This ensemble is composed of older adults and the forever young who meet for fellowship, community, singing, and fun. It leads our 8:30 traditional worship service on the 3rd Sunday of each month and also sings for special occasions. The choir periodically visits nursing/retirement homes in the area to share their music ministry. Please call Dr. Trevor Smith at 424-224-1505 for more information.
The orchestra is open to all high school and adult musicians (1 year experience) and plays monthly in the Traditional Worship services. Rehearsals are on Wednesday evenings at 6:15 in the sanctuary.
Please call Gay Aycock at 378-3312 for more information.
First Broad Street offers five different handbell choirs which add joyful ringing to our Sunday morning worship services. These groups attend area handbell festivals in the spring and are featured in a Christmas Ring and a Spring Ring each year. Please call Dr. Trevor Smith at 424-224-1505 for more information.


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Adele To Perform At Brit Awards 2016, Following Success Of Album '25'
Ashley Percival— The Huffington Post UK
Adele has been confirmed as the first act to be performing at next year's Brit Awards.
The singer will be among the stars taking to the stage on the UK's biggest night in music next February.
Speaking about the announcement, Brits Chairman Max Lousada said: "You couldn't get a bigger name in music right now. Adele is having an exceptional moment and The Brits are delighted to be a part of her history, her present and future."
Adele previously performed at the Brits in 2012
Adele will be hoping to add to her collection of Brits, after smashing records across the globe with her latest album '25', following its release last month.
In the UK, '25' broke the week-one album sales record and is officially the fastest-selling album - as well as the most downloaded number-one album - of all time.
Adele was first awarded the Critics' Choice Award in 2008, and went on to win a further three awards.
In 2012, she was awarded Best Female Solo Artist and Best British Album for '21', when she famously flipped the bird after her acceptance speech was cut short, and in 2013 she was awarded Best British Single for 'Skyfall'.
In 2011, she earned a place in Brits history after she gave an incredible performance of 'Someone Like You'.
The Brits Awards 2016 will take place on Wednesday 24 February 2016 at London's O2 Arena and will be broadcast live on ITV, with Ant & Dec returning as hosts.
Relive Adele's performance of 'Someone Like You' at the 2011 Brits in the video below...
AdeleBRIT awardsuktv uk musicentertainment


Documentary theatre is different from the plays which tell a story with a situation, but has a close relationship with the place at that moment, and therefore rarely performed on stage and unfamiliar to local audience. Hosted and directed by Mr. Hoi-fai Wu, the artistic director of our company, five actors will read selected masterpieces, in order to introduce the development of documentary theatre in US and UK through their different styles and achievements.
More quota are now open in view of the overwhelming response!
Application Method:Please apply by entering information in www.art-mate.net on or before 12 July 2017, and confirmation will be received within 3 days. Limited quota on first-come- first-served basis.


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UPS unveils Dublin 'eco package hub' to reduce delivery van journeys
2 June 2017, source edie newsroom
An "urban eco package hub" has been launched by package delivery firm UPS that will limit the amount of delivery vehicles operating in the city centre to ease congestion and pollution concerns.
UPS announced on Thursday (1 June) that a locally-designed container has been placed on Wolfe Tone Street that will support package delivers made by foot, bike and electrically-assisted cycles and tricycles.
Acting as a mini distribution centre, the "urban eco" container hub will eliminate the need for four vehicle dispatches in the city centre each day.
"As one of Europe's fastest growing cities, Dublin is going through an exciting period of change – but one that also comes with challenges of congestion and air quality," UPS's Ireland country manager Andy Smith said.
"We see this urban eco hub as an important part of the community. It addresses and reduces congestion and greenhouse gas emissions, and sits as a piece of public art that celebrates local talent."
Dublin's Chamber of Commerce estimates that around 500,000 people travel within the city daily. By 2023 an estimated 234,000 commuters will make trips into the city, a 20% increase on 2015 levels.
Although electric vehicles (EVs) are gaining in popularity, it is likely that these extra commutes will add to congestion and air pollution.
Commenting on the announcement, Dublin City Council's head of technical services Brendan O'Brien said: "This pilot project gives an excellent collaboration opportunity between UPS and Dublin City Council to reduce the number of goods vehicles on the city streets, reduce congestion and improve the urban environment with less emissions, noise, and damage to roadways. The outcome of this pilot project will inform freight delivery practices in the city."
UPS has already trialled similar schemes in Austria, Belgium, France, Germany, Italy and other parts of the UK. Notably, the project in Germany has seen between seven to 10 fewer delivery journeys in the city of Hamburg daily.
Delivering decarbonisation
The delivery firm has established a dedicated framework to reduce its fleet emissions. Since 2007, overall carbon intensity has fallen by 14.5%, as UPS closes in on a 20% reduction target for 2020.
The reduction has been aided by a foray into the EV market. Under the "Rolling Laboratory" initiative, upwards of $750m was invested by the end of 2016 in alternative fuel and advanced technology fuelling stations globally, including hybrid-electric trucks.
Currently, around 12% of the conventionally-fuelled ground fleet is being replaced by these new fuel-mix vehicles. Last year, UPS purchased 125 new hybrid electric delivery trucks in the US and begun trials for its first range-extended EVs in the UK.
Under the Rolling Laboratory initiative, more than 7,200 vehicles have been combined with UPS's ORION system, which can see up to 30,000 delivery route optimisations each minute to save on fuel use and road miles.
In March 2017, UPS's director of sustainability for Europe Peter Harris told edie that the firm is partnering with distribution network operator UK Power Networks to trial decentralised power generation and onsite storage systems at its London operating base.
Matt Mace
air quality | electric vehicles | low-carbon


Really pleased with the necklace, bought it as a present and my sister loves it!
Unusual name made to order and quickly delivered, made small alteration after placing order and was dealt with no problem at all. would suggest that a slightly larger gauge chain was supplied especially with long names.
its lovely and classy and so pretty and shiny! i wear it all the time, i love it!
Very quick delivery, and the necklace was exactly what I wanted, very pleased. Thanks you.


In last week's post, we covered a BitLocker implementation for Azure virtual machines. But as mentioned in that post, because BitLocker doesn't fully satisfy the Payment Card Industry Data Security Standard (PCI DSS) requirement (specifically, 3.4 and 3.5.2) for data encryption at rest, we also implemented SQL Transparent Data Encryption (TDE) for all databases. TDE does fulfill that requirement, because all of the client's cardholder data (CHD) is stored at rest in SQL databases, and this fifth post in the Azure Secure Cloud Migration series describes the TDE implementation. For an overview of the Azure Secure Cloud Migration blog series and a list of the topics being covered, see the introductory post, Preparing to Migrate to a Secure Cloud, and for more information on the PCI DSS encryption and key management requirements that drove our BitLocker and TDE implementations, and how organizations can meet them, see Encrypt All The Things – PCI DSS and Cryptography.
In an implementation without an HSM, there is a chain of keys and certificates, all managed by the OS, that encrypt the data. However, using an HSM backed key vault cuts a few steps out of that process. You're left with just a strong Database Master Key (DMK) in the key vault, which is used to encrypt the individual Database Encryption Keys (DEKs), which are then stored in the unencrypted boot page of each database.
We had more significant data portability concerns with TDE than we did with BitLocker – while it's unusual to move a hard drive from one server to another, it's commonplace to be mounting databases on other SQL servers and restoring backups to other SQL instances. For this reason, we used a single DMK for our entire Cardholder Data Environment (CDE), ensuring that any database could be restored to any SQL instance.
Microsoft's documentation also stresses that you should protect your DMK very carefully, and even goes as far as recommending that you not generate it inside of the AKV. This is because the asymmetric key, when generated internally to the AKV, is difficult if not impossible to extract in a usable format. If the AKV is ever unavailable or is lost, along with it goes any way to unwrap the DEKs and access the databases. Unfortunately, generating the asymmetric key externally comes along with significant process burdens in a PCI DSS compliant environment – for example, the need to have dual control when creating the key, as well as the need for secure, audited, and logged storage of the key external to the vault.
To mitigate this risk, we actually leveraged two AKVs – one in each of two Azure regions, but both in the same Azure subscription. Microsoft provides PowerShell functions to export an HSM-backed asymmetric key, and import it in to a second AKV. This export is unusable outside of a key vault, and can only be imported in to a key vault in the same subscription, minimizing the risk that it can be maliciously used outside of the intended environment. During a disaster affecting one Azure region, minimal SQL configuration can be performed to repoint SQL instances to the alternate vault. Since the same DMK exists in both vaults, database access is automatically restored.
If you opt to use the AKV to store keys, whether for BitLocker, TDE, or anything else, be sure to secure them appropriately. We placed all the key vaults in their own resource groups, and granted permissions to those resource groups (and thus, the AKV objects themselves) to as small a number of people as possible – for BitLocker and TDE purposes, only the Azure AD applications being used needed permissions on the objects. Users will never directly interact with the vaults once configuration is complete. We also kept the number of people with ownership permissions on the subscriptions as low as possible, since inherited permissions in Azure cannot be removed or blocked like you may be used to in something like NTFS. Finally, we granted rights on the functions within the AKV (such as wrap, unwrap, and list) as sparingly as possible to limit the number of users or principals that can gain access to the keys and secrets stored within.
Between BitLocker and TDE, data in Azure Infrastructure as a Service VMs can be just as secure as it is when stored in traditional on-premises environments. Hopefully these implementation guidelines help you when planning and deploying your environment to meet the PCI DSS's data encryption requirements.


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Home 2011 May 25 Journal of Law and Medicine (JLM) New Section Editor for the Journal of Law and Medicine
New Section Editor for the Journal of Law and Medicine
By Tara Crisp on May 25, 2011
A new Section Editor has joined the team for the Journal of Law and Medicine.
Dr Danny Sullivan has joined as the Section Editor for the "Medical Issues" Section. Dr Sullivan is the Assistant Clinical Director of the Victorian Institute of Forensic Mental Health. He is also an Adjunct Senior Lecturer at the School of Psychology and Psychiatry at Monash University. He brings with him a wealth of knowledge and expertise in issues relating to medicine and the law.
The Journal of Law and Medicine publishes top-quality academic articles about issues that have a legal, medical or bioethical focus. It encourages informed discourse about contemporary issues from empirical, practical, policy and theoretical perspectives. It received an A ranking in the Australian Research Council's Excellence in Research for Australia project in 2010, which proves its strength as a leading academic publication focussing on the intersection between law and health.
New Section Editor joins Australian Journal of Administrative Law team
New Section Editors for Journal of Banking and Finance Law and Practice
Regulating for compassion?
Journal of Law and Medicine update: March 2011
Editorial: Huntington's disease and the law
Posted in Journal of Law and Medicine (JLM) | Tagged Dr Danny Sullivan, JLM, Section Editor
Seen Property Law Review yet? Submissions welcome
Journal ranking indicators scrapped
Journal of Law and Medicine
Dr Ian Freckelton SC


So this will explain you how I managed to get two versions of Firefox installed on Ubuntu. One old version used for testing and one updated used as my default browser.
First we will remove our current Firefox version. We will do this to ensure that we start from scratch but you can try to skip this if you already have an updated version of firefox running and go ahead with the testing version setup.
So just go there and select which versions do you want to install. In my case I have a 64bits version and I selected the spanish versions of Firefox v47.0.2 (for testing) and Firefox v49.0.2 (for standard usage).
That let's our system ready for standard firefox usage. If you run firefox it should show you the v49.0.2 version.
So when I want to test I only have to run ffox-test and the active firefox version becomes v47.0.2. When I finished running tests I run ffox-std and the active firefox version becomes v49.0.2.
Remember that when you add new aliases they don't become active until you restart the bash session so you may need to execute bash in command line to get the new aliases working. When you restart they will be there for you.
Ventajas de usar FOF para el desarrollo de componentes para Joomla!


Gathering Ground hosts private and group sessions for families and individuals in the beautiful urban refuge of Prospect Park. Each session of classes lasts 8 weeks and includes plant ID walks, a healing plant experience, and meditation instruction. Family classes are led by a guide and assistant guide to engage curious children so that parents can get the most out of their experience.
Gathering Ground has been such a beautiful part of every week! Liz and Julia are so quietly knowledgable and peaceful... Every moment with them is special. Identifying the plants and seeing them change, the slow walk with like minded people, children of all ages enjoying being outside! And the tea, meditation, and song circle are each calls to mindfulness. I'm full of admiration and gratitude for the experience, a mid-morning slow down to feel more present!
Each class starts with a friendly greeting.
You will meet your guides at the Grand Army Plaza entrance to Prospect Park.
Together we walk and witness the healing plants that grow all around us. We continue our walk to the sacred space where we engage in activities to stimulate the senses and bring us into the present moment.
Each week there is a focused lesson on a healing plant and we will experience its medicine through drinking herbal infusions or decoctions.
Additional activities will change with the seasons.
Some of these activities include: discovering plants through the 5 senses, deep listening, walking and sitting meditation, and direct perception.
In family classes, children will be gently led by an assistant guide through parallel activities.
Babies who are not yet crawling will be carried through the activities by their parent or caregiver, with additional assistance from the guide and assistant when needed.
Each family session closes with a circle time where we all sing together.
Before beginning a session, each adult will be asked to set an intention. You'll also receive readings, herbal recipes, and talisman to help establish and support a home practice.
Gathering Ground is your space to reflect, listen to your inner wisdom, and connect with the world around you in a new way.
reserves of strength that will endure as long as life lasts.


At Camp Sixty One Campground you can get a more delightful wilderness experience than you would get at a more civilized campground. Getting to a primitive campground like Camp Sixty One Campground could be slightly hard, but it's well worth it. It is extremely picturesque here at this primitive campground, and there aren't scores of services at Camp Sixty One Campground in view of the fact that it is a primitive campground. Outdoors folks generally love this section of California. The magnificent local attractions and the nearby outdoors recreation are nice motives to come.
Nevada. Many folks stay at this campground so they can go to Sierra National Forest. Anxious to set up that camp site; Camp Sixty One Campground in California is a great pick.
do in the neighborhood of Camp Sixty One Campground, and it's always fun to be at this place. Camp Sixty One Campground is a very popular campground among the folks of Lakeshore.
can be found on close by Mono Creek, the Vermillion Dam to Mono Diversion portion. The Vermillion Dam to Mono Diversion portion of Mono Creek is well suited for raft paddlers who have been paddling for a while.
Outdoors recreation in the vicinity of Madera, California, the metro area neareast to Camp Sixty One Campground. Find info on campgrounds, marinas, hiking trails, ski resorts, lakes, beaches, parks, whitewater, golf courses and more.


It's been a long time since I switched from using Windows as my primary development platform, and whilst you may hear a fair bit about the effect that this has had within my posts (for better or worse). Something that i have never really been able to completely replace on either the Mac or Linux platform was my favoured editor - Ultraedit. Deep down I have a soft spot for Uedit, and whilst it can be a little bloated for simple tasks, years of useage and tweaking to my liking made it my favourite tool for all kinds of development work.
Gedit on the Linux platform, once endowed with a few useful plugins, becomes a useable tool for web development. The inclusion of tools such as the 'Class Browser' (http://www.stambouliote.de/projects/gedit_plugins.html), 'Symbol Browser' (http://symbol-browser.sourceforge.net), 'Word Completion' (http://users.tkk.fi/~otsaloma/gedit) and 'Find in Files', makes Gedit a really useful editor, which whilst not really feature packed is more than capable, which is excellent for the standard packaged editor that is supplied with the Gnome desktop.
For the Mac, there are quite a few editors out there, some free some not, none are really on par with Ultraedit featurewise, but this could be seen as a plus in some respects. I was quite happy using TextMate for web development work, especially as it had plugins available for code browsing and project handling, that is, until I found Coda.
Coda, takes up where other editors on the Mac finish, and whilst it may only be aimed at web development, it includes everything that you might need in the day to day life of a web dev.
Coda integrates the most useful programs all into one single IDE, it includes project management, an FTP client, text editor, preview window, css editor, SVN client and even a terminal window for remote access to your web server.
Coda is not a free application, but does offer a free demo. If you're in the market for a decent development platform for web apps, then give Coda a try, I'm sure that you will not be dissapointed.


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Jerry McCord Van Dyke (ur. 27 lipca 1931 w Danville, zm. 5 stycznia 2018 w Hot Springs) – amerykański aktor filmowy i telewizyjny, komik.

Był synem Lorena i Hazel (właściwie McCord) Van Dyke'ów, młodszym bratem aktora Dicka Van Dyke'a i wujkiem Shane'a Van Dyke'a, także aktora. Jego ojciec był z pochodzenia Holendrem, a matka potomkinią Petera Browne'a, pasażera Mayflowera z Anglii.

Przypisy

Linki zewnętrzne

Amerykanie pochodzenia holenderskiego
Amerykanie pochodzenia irlandzkiego
Amerykanie pochodzenia szkockiego
Amerykańscy aktorzy filmowi
Amerykańscy aktorzy głosowi
Amerykańscy aktorzy radiowi
Amerykańscy aktorzy teatralni
Amerykańscy aktorzy telewizyjni
Amerykańscy komicy
Urodzeni w 1931
Zmarli w 2018

redpajama_set_name: RedPajamaWikipedia


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February 16, 2016 | National Review
Underestimating Nuclear Missile Threats from North Korea and Iran
R. James Woolsey
Co-written by William R. Graham, Henry F. Cooper, Fritz Ermarth and Peter Vincent Pry
North Korea launched its second satellite on Saturday, yet the national press continues to ignore this existential threat. The White House has not recognized that a nuclear-armed North Korea has demonstrated an ability to kill most Americans with an electromagnetic-pulse (EMP) attack. And White House spokesmen and the media have misled the public with unjustified assurances that North Korea has not yet miniaturized nuclear warheads for missile or satellite delivery.
We, who have spent our professional lifetimes analyzing and defending against nuclear-missile threats, warned years ago that North Korea's Unha-3 space launch vehicle could carry a small nuclear warhead and detonate it a hundred or so miles over the United States to create an EMP, leading to a protracted nationwide blackout. The resulting societal chaos could kill millions.
Indeed, the trajectory and altitude of North Korea's last satellite orbited three years ago, the KSM-3, could have evaded detection by U.S. missile-tracking radars in its initial orbit and evaded interception by our National Missile Defense, exposing the 48 contiguous United States to an existential EMP attack.
Last year, Admiral William Gortney, commander of North American Aerospace Defense (NORAD), acknowledged the nuclear-missile threat from North Korea:
On April 7, 2015, he warned that North Korea has mobile intercontinental ballistic missiles (ICBMs) called KN-08, armed with nuclear warheads, that can strike the U.S. mainland. He revealed that critical assets hardened against EMP are moving back into an underground command post inside Cheyenne Mountain at a cost of $700 million.
On October 8, 2015, he warned the Atlantic Council:
I agree with the intelligence community that we assess that they [the North Koreans] have the ability, they have the weapons, and they have the ability to miniaturize those weapons, and they have the ability to put them on a rocket that can range the [U.S.] homeland.
Iran is also being underestimated as a nuclear-missile threat. The press accepts Obama-administration assertions that its recent nuclear deal will keep Iran from developing nuclear weapons for a decade. The administration and the press both celebrate Iran's shipping of enriched uranium to Russia and its filling the core of the Arak plutonium reactor with cement. We are supposed to believe that these acts signify Iran's good faith, and that the nuclear deal is working. We do not.
Apparently forgotten are North Korea's equally dramatic gestures to deceive President Bill Clinton while cheating on his "nuclear deal" called the Agreed Framework. North Korea stopped its Yongbyon plutonium reactor, allowed the United Nations to install cameras and seals to monitor nuclear activities, and acceded to virtual occupation of Yongbyon by U.N. inspectors. All the while, North Korea's clandestine underground nuclear-weapons program continued unimpeded — indeed, its nuclear weapons existed before the Agreed Framework was signed.
The Congressional North Korea Advisory Group saw through this deception and warned that the Agreed Framework was not working. But while North Korea developed long-range missiles and nuclear weapons, President Clinton and the press preferred to believe otherwise.
Iran is following North Korea's example — as a strategic partner allied by treaty and pledged to share scientific and military technology. Iran sacrificed its overt civilian nuclear program to deceive the Obama administration, to lift international sanctions, to prevent Western military action, while a clandestine military nuclear program no doubt continues underground. That is why Iran, under the nuclear deal, will not allow inspection of its military facilities and prohibits interviewing scientists — it is concealing the dimensions and status of Iran's nuclear-weapons program.
We assess, from U.N. International Atomic Energy Agency reports and other sources, that Iran probably already has nuclear weapons. Over 13 years ago, prior to 2003, Iran was manufacturing nuclear-weapon components, like bridge-wire detonators and neutron initiators, performing non-fissile explosive experiments of an implosion nuclear device, and working on the design of a nuclear warhead for the Shahab-III missile.
Thirteen years ago Iran was already a threshold nuclear-missile state. It is implausible that Iran suspended its program for over a decade for a nuclear deal with President Obama.
Iran probably has nuclear warheads for the Shahab-III medium-range missile, which they tested for making EMP attacks. Two recent tests violate UN agreements, demonstrating that Iran is brazenly developing its nuclear-capable missiles. Iran already has the largest medium-range ballistic-missile force in the Middle East.
Iran could be building a nuclear-capable missile force, partly hidden in tunnels, as suggested by its dramatic revelation of a vast underground missile-basing system last year. Iran is building toward a large, deployable, survivable, war-fighting missile force — to which nuclear weapons can be swiftly added as they are manufactured.
And at a time of its choosing, Iran could launch a surprise EMP attack against the United States by satellite, as they have apparently practiced with help from North Korea. We live in a very dangerous time, and we urge that the Senate immediately pass the Critical Infrastructure Protection Act (already passed by the House) to safeguard U.S. life-sustaining critical infrastructures against EMP attack. We also recommend that a Congressional Iran Advisory Group be formed to objectively assess the Iran deal.
R. James Woolsey is a former director of central intelligence and is chairman of the Foundation for Defense of Democracies. Peter Vincent Pry is executive director of the EMP Task Force, and served in the EMP Commission, the Strategic Posture Commission, the House Armed Services Committee and the CIA.
Iran North Korea


Transportation Secretary Ray LaHood plans to hold a meeting Wednesday with the shareholders involved in building Metro's new Silver Line because there is growing concern that starting construction on the second part of the rail line is delayed.
The move comes as the Metropolitan Washington Airports Authority said Wednesday it would not put out requests for quotations on the project until Loudoun County supervisors vote on whether to help pay for the project. The supervisors have until July 4.
Recently, Virginia lawmakers have been concerned about putting money into the project because they are worried about offering an incentive to prospective contractors if there is a pro-union work agreement. And Loudoun County supervisors have wanted more details about the project before they agree to contribute money.
Last fall, LaHood helped negotiate a deal among the stakeholders in the project -- MWAA, Metro, Loudoun and Fairfax counties, and Virginia -- on how to finance the nearly $3 billion rail line.
The first phase of the project, which runs through Tysons Corner to Wiehle Avenue, is under construction and expected to be completed in August of 2013.
Construction on the second phase, which runs to Dulles International Airport and Loudoun County, was expected to start early next year.
Follow me on Twitter @postmetrogirl.