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JP2005277380A - Led and its manufacturing method - Google Patents
Led and its manufacturing method Download PDF
silicon substrate
JP4572312B2 (en
JP2005277380A5 (en
Masanao Tani
Kazuhiko Ueno
Yoshiaki Yasuda
一彦 上野
喜昭 安田
雅直 谷
Stanley Electric Co Ltd
スタンレー電気株式会社
2004-02-23 Priority to JP2004046173 priority Critical
2004-11-24 Application filed by Stanley Electric Co Ltd, スタンレー電気株式会社 filed Critical Stanley Electric Co Ltd
2004-11-24 Priority to JP2004338624A priority patent/JP4572312B2/en
2005-10-06 Publication of JP2005277380A5 publication Critical patent/JP2005277380A5/ja
238000004519 manufacturing process Methods 0 abstract title 2
210000003284 Horns Anatomy 0 abstract 3
229920000642 polymers Polymers 0 abstract 2
239000011347 resins Substances 0 abstract 2
239000010703 silicon Substances 0 abstract 2
229910052710 silicon Inorganic materials 0 abstract 2
238000005530 etching Methods 0 abstract 1
230000020169 heat generation Effects 0 abstract 1
239000000463 materials Substances 0 abstract 1
H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
H01L33/483—Containers
H01L33/486—Containers adapted for surface mounting
H01L33/58—Optical field-shaping elements
H01L33/60—Reflective elements
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
H01L2224/10—Bump connectors; Manufacturing methods related thereto
H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
H01L2224/161—Disposition
H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L2224/42—Wire connectors; Manufacturing methods related thereto
H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
H01L2224/45001—Core members of the connector
H01L2224/45099—Material
H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
H01L2224/45144—Gold (Au) as principal constituent
H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
H01L2224/4805—Shape
H01L2224/4809—Loop shape
H01L2224/48091—Arched
H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
H01L2224/484—Connecting portions
H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
H01L2224/4901—Structure
H01L2224/4903—Connectors having different sizes, e.g. different diameters
H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
H01L2224/85909—Post-treatment of the connector or wire bonding area
H01L2224/8592—Applying permanent coating, e.g. protective coating
H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/013—Alloys
H01L2924/0132—Binary Alloys
H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
H01L2924/10—Details of semiconductor or other solid state devices to be connected
H01L2924/102—Material of the semiconductor or solid state bodies
H01L2924/1025—Semiconducting materials
H01L2924/10251—Elemental semiconductors, i.e. Group IV
H01L2924/10253—Silicon [Si]
H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
H01L2924/181—Encapsulation
H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
H01L2924/19101—Disposition of discrete passive components
H01L2924/19107—Disposition of discrete passive components off-chip wires
H01L2924/30—Technical effects
H01L2924/301—Electrical effects
H01L2924/3025—Electromagnetic shielding
H01L33/64—Heat extraction or cooling elements
H01L33/642—Heat extraction or cooling elements characterized by the shape
PROBLEM TO BE SOLVED To provide a case where temperature rise due to heat generation can be satisfactorily suppressed, can be easily made into a multi-chip, can be easily configured in a small size, and a plurality of LED chips are mounted. It is an object of the present invention to provide an LED and a method for manufacturing the same which can be easily mounted without using a bonding wire or the like with an output light quantity as high as possible.
SOLUTION: A silicon substrate 11, a pair of electrodes 14 and 15 formed in a horn 11a formed on the silicon substrate by anisotropic etching, and mounted in the horn and electrically connected to both electrodes. The LED 10 is configured to include the LED chip 12 connected to the resin and the resin mold 13 made of a resin material filled in the horn.
[Selection] Figure 1
The present invention relates to an LED and a manufacturing method thereof.
Conventionally, an LED such as a power white LED is configured as shown in FIG.
That is, in FIG. 28, the LED 1 is obtained by forming a horn 2a with a recessed portion on a conductive substrate 2 made of copper or the like having high thermal conductivity, and mounting the LED chip 3 directly on the bottom surface of the horn 2a. In addition, a phosphor (not shown) is disposed in the horn 2a, and an insulator 4 such as a resin or ceramic is fitted around the conductive substrate 2 and the surface thereof.
According to the LED 1 having such a configuration, the LED chip 3 is driven and supplied with light from the outside to emit light, and the light emitted from the LED chip 3 is reflected directly or by the inner wall of the horn 2a, and then the fluorescent light is emitted. The phosphor strikes the body and excites the phosphor. As a result of the color mixture of the excitation light and the light from the LED chip 3, the phosphor is emitted as white light.
Further, as shown in FIG. 29, a submount substrate 5 made of ceramic, silicon or the like in which electrodes are formed by patterning is disposed on the bottom surface of the horn 2a, and the LED chip 3 is mounted on the submount substrate 5. An LED 1 ′ having a configuration that performs the above-described process is also known.
On the other hand, an LED 6 having a configuration as shown in FIG. 30 is also known.
In FIG. 23, an LED 6 is formed by forming a horn 7a with a recessed portion on an insulating substrate 7 such as ceramic or resin, and patterning the electrode 7b in the horn 7a by printing, plating, vapor deposition or the like. The LED chip 3 is mounted on 7b, and a phosphor (not shown) is arranged in the horn 7a.
The horn 7a may be configured by laminating thin insulator substrates as shown in FIG.
According to the LED 6 having such a configuration, the LED chip 3 is similarly driven by being fed from the outside to emit light, and the light emitted from the LED chip 3 is reflected directly or by the inner wall of the horn 7a. Thereafter, the phosphor strikes the phosphor to excite the phosphor, and is emitted to the outside as white light by color mixture of the excitation light and the light from the LED chip 3.
An LED 8 configured as shown in FIG. 32 is also known.
32, the LED 8 has the same configuration as that of the LED 6 shown in FIG. 30, and is different only in that a plurality of (two in the illustrated case) LED chips 3 are mounted in the horn 7a. It has become.
US Pat. No. 6,531,328 Complete micromachine / MEMS technology p. 109-114 Electronic Journal Publishing Co., Ltd. C. Strandman, et al. Proceedings of MEMS '95 (1995) p. 244
By the way, in the LED 1, since a metal such as copper having high thermal conductivity is used for the mount portion of the LED chip 3, current is supplied to the LED chip through this mount portion. When doing so, it is necessary to connect each LED chip 3 in parallel. For this reason, current concentrates on the LED chip 3 having a low Vf due to variations, and the life may be shortened.
On the other hand, since the LED 1 ′ uses the submount substrate 5, it is possible to connect the LED chips 3 in series when they are multichiped, but the number of components increases. However, the parts cost and the assembly cost are increased, and the number of joints is increased. Therefore, there is a problem that the thermal resistance during operation increases.
Further, in the LED 6, when the electrodes are patterned on the insulator substrate 7 to form a multichip, the LED chips 3 can be connected in series with each other. Since the insulating material generally has a low thermal conductivity, the light emission efficiency is lowered, the emitted light flux is reduced, and the life is shortened.
On the other hand, ceramic materials such as AlN ceramics have been developed as insulators with high thermal conductivity. However, the materials themselves are expensive and have poor workability.
Furthermore, in each of the LEDs 1, 1 'and 6 described above, since it is necessary to form the horns 2a and 7a, there is a limit to downsizing, and it is impossible to incorporate other elements, circuits, etc. in the package. It was practically difficult.
Further, in the LED 8, the total output of light, that is, the light output extracted upward depends on the distance between the LED chips 3, and the light absorption between the LEDs 6 occurs and the light emitted from each LED chip 3. Is reflected by the slope of the horn 2a and returns to the LED chip 3 again by the LED chip 3 itself, so that the total output of the LED chips 3 becomes lower than the sum of the specific outputs of the LED chips 3 and the total output decreases. It will be.
Furthermore, the luminance distribution of the light extracted from above varies depending on the distance between the LED chips 3 and the light absorption of the LED chips 3 described above.
On the other hand, by providing a partition made of an opaque material between each LED chip 3, light absorption between the LED chips 3 can be eliminated, but when a partition is provided by machining or resin molding, Since the intervals between the LED chips 3 are increased, the light distribution characteristics are deteriorated and the luminance is uneven.
Further, in any of the above-described LEDs 1, 1 ′, 6, 8, as shown in FIG. 33, for example, when the LED 6 is mounted on a mounting board 9 (or a lead frame) such as a printed board or a flexible board, In order to electrically connect with the connection portion 9a by the conductive pattern on the substrate 9, so-called reflow soldering for improving the efficiency of the mounting process cannot be performed, so the bonding wire 9b (or lead wire) is used. Must.
Therefore, since the bonding strength and insulation of these bonding wires or lead wires are insufficient, in order to protect them, it is necessary to mold the resin or cover it with another package. The advantages of downsizing and thinning cannot be fully utilized.
In addition, in order to fix the LED 1 on the mounting substrate 9, it is necessary to use an adhesive, and when the other components such as a lens module are mounted adjacent to each other, the bonding wire 9b or the like becomes an obstacle. In addition to the possibility, it is difficult to mount on the mounting substrate 9 while maintaining heat dissipation.
In view of the above, the present invention can satisfactorily suppress the temperature rise due to heat generation, can be easily made into a multi-chip, can be easily configured in a small size, and further includes a plurality of LED chips. It is an object of the present invention to provide an LED and a method for manufacturing the same, in which the output light quantity is made as high as possible and can be easily mounted without using bonding wires, etc. In particular, the present invention is (1) silicon substrate processing. There is no need to use a dry process in the process, and (2) there is no need for a laser trimming process in the electrode patterning process, and contacts can be formed by spraying or electrodeposition, and a pattern is formed on the back side. There is no need to
(3) The electrode pattern can be formed only on the LED mounting side of the silicon package, and there is no need to form a pattern on the back side.
(4) A heat radiation dummy pattern can be formed on the back side of the silicon package.
This is different from the conventional example described above.
According to the first configuration of the present invention, the above object is achieved by mounting a silicon substrate, at least two electrodes formed in the horn formed by anisotropic etching on the silicon substrate, and mounted in the horn. The LED is characterized by including at least one LED chip electrically connected to the electrode and a resin mold made of a resin material filled in the horn.
In the LED according to the present invention, preferably, the electrode is drawn from the horn, and the lead frame is further in electrical contact.
The LED according to the present invention is preferably formed by etching the horn to a depth not penetrating from the top surface to the bottom surface of the substrate, and each electrode is formed on the silicon substrate via the side surface from the bottom surface of the horn. It is formed so as to extend along the surface.
In the LED according to the present invention, preferably, the silicon substrate is composed of a flat first substrate having an electrode formed on a surface thereof, and a second substrate laminated on the first substrate, The second substrate includes a horn penetrating vertically.
In the LED according to the present invention, the LED chips are preferably die-bonded on one electrode in the horn and wire-bonded to the other electrode.
In the LED according to the present invention, preferably, each LED chip is mounted so as to straddle two electrodes in the horn, and electrodes formed on both side edges below are respectively two electrodes in the horn. Is electrically connected.
In the LED according to the present invention, the side surface of the horn is preferably formed as any one of {111}, {110}, and {100} planes.
In the LED according to the present invention, preferably, the side surface of the horn has a mirror surface on the surface.
The LED according to the present invention preferably has an actuator formed on the silicon substrate.
The LED according to the present invention preferably has an electronic circuit formed on the silicon substrate.
In the LED according to the present invention, preferably, the electronic circuit is at least one of a photodiode, a transistor, and an IC.
In the LED according to the present invention, the horn is preferably filled with a resin.
The LED according to the present invention preferably contains a phosphor in the resin.
The LED according to the present invention preferably includes a partition wall so that the horn surrounds each LED chip independently.
In the LED according to the present invention, the upper end of the partition wall is preferably flat at the same height as the upper surface of the silicon substrate.
In the LED according to the present invention, preferably, the upper end of the partition wall has a ridge line having the same height as the upper surface of the silicon substrate.
In the LED according to the present invention, preferably, the upper end of the partition wall includes a ridge line having a height lower than the upper surface of the silicon substrate.
In the LED according to the present invention, the side wall of the partition wall is preferably formed flat, convex, or concave.
In the LED according to the present invention, preferably, side surfaces of the partition wall are formed as {111}, {110}, and {100} planes.
According to another configuration of the present invention, the object is to provide a silicon substrate, a horn formed on the substrate by liquid phase etching, and at least two contact holes formed on the substrate by liquid phase etching, And at least two electrodes extending from the horn to the lower edge of the contact hole, and at least one LED chip mounted in the horn and electrically connected to the electrode. This is achieved by the LED.
According to another configuration of the present invention, the object is to provide a silicon substrate, a horn formed on the substrate by liquid phase etching, and at least two contact edges formed on the substrate by liquid phase etching, And at least two electrodes extending from the horn to the lower edge of the contact edge, and at least one LED chip mounted in the horn and electrically connected to the electrode. This is achieved by the LED.
In the LED according to the present invention, the silicon substrate is preferably rectangular when viewed from the side on which the LED chip is mounted, and the contact edge is formed in at least one of the four corners of the rectangle.
In the LED according to the present invention, preferably, the silicon substrate includes a metal thin film on the lower surface at least in the region of the horn.
In the LED according to the present invention, preferably, the silicon substrate is installed on the heat dissipation member via the metal thin film.
The LED according to the present invention preferably has a lens disposed on the horn.
In the LED according to the present invention, preferably, the lens is a convex lens.
In the LED according to the present invention, preferably, the lens is a spherical lens.
In the LED according to the present invention, an alignment recess for the lens is preferably formed around the horn of the silicon substrate.
According to another configuration of the present invention, the above object is achieved by a step of forming a horn on a silicon substrate by liquid phase etching, a step of forming at least two electrodes in the horn, and at least one in the horn. It is achieved by an LED manufacturing method including at least a step of mounting one LED chip and connecting the LED chip to the electrode.
The LED according to the present invention is preferably a method for producing an LED, comprising a step of filling a resin material in the horn to form a resin mold.
The LED according to the present invention is preferably characterized in that, in the step of forming a horn by liquid phase etching on the silicon substrate, the inside of the horn is formed adjacent to each other, and a partition is formed between the horns. It is a manufacturing method of LED.
The LED according to the present invention is preferably a method for manufacturing an LED, wherein an upper end of the partition is formed at the same height as or lower than the silicon substrate.
The LED according to the present invention is preferably a method for producing an LED, wherein the surface of the partition is formed in a concave shape or a convex shape.
According to another configuration of the present invention, the object is to form an oxide film on the surface of the silicon substrate, to pattern the oxide film so as to expose a portion serving as a contact hole, and to the silicon substrate. Forming a shallow depression in a portion to be a contact hole by liquid phase etching, patterning to expose a portion to be a horn with respect to the oxide film, and contacting the horn to the horn by liquid phase etching on the silicon substrate. Forming a hole; forming an insulating film on the surface of the silicon substrate; forming an electrode pattern on the silicon substrate; die-bonding an LED chip in the horn; and electrically connecting the electrode pattern to the electrode pattern And a step of dividing the silicon substrate. By the way, it is achieved.
According to another configuration of the present invention, the object is to form an oxide film on the surface of the silicon substrate, to pattern the oxide film so as to expose a portion serving as a through hole, and to the silicon substrate. A step of forming a shallow depression in a portion to be a through hole by liquid phase etching, a step of patterning to expose a portion to be a horn with respect to the oxide film, and a step through the horn by liquid phase etching in the silicon substrate. Forming a hole, forming an insulating film on the surface of the silicon substrate, forming an electrode pattern on the silicon substrate, die-bonding an LED chip in the horn, and electrically connecting the electrode pattern to the electrode pattern And a step of dividing the silicon substrate while forming a contact edge so as to cross the through hole. Wherein, by the manufacturing method of the LED, it is achieved.
According to another configuration of the present invention, the object is to provide a step of forming an electrode on the first substrate, and prepare a silicon substrate as the second substrate, and form a through hole in the silicon substrate by liquid phase etching. A step of forming a horn on the side wall; a step of bonding the first substrate and the second substrate so that the electrode can be seen at the bottom of the through hole; and a step of die-bonding an LED chip to the electrode. This is achieved by a method for manufacturing an LED characterized in that it includes:
The LED according to the present invention preferably includes a step of forming a mirror surface on the inner surface of the through hole and / or a step of performing resin molding and / or a step of insulating the Si surface with an oxide film. It is a manufacturing method of LED.
According to the first configuration, each LED chip is driven by supplying power to each LED chip from the outside via the electrode. And the light radiate | emitted from each LED chip is reflected by the bottom face or side surface of the horn of a silicon substrate, and radiate | emits upwards through a resin mold.
In this case, the substrate on which each LED chip is mounted is composed of a silicon substrate (about 150 W / m · k) with high thermal conductivity, and the thickness can be reduced. The thermal resistance is reduced, and the heat generated from each LED chip during driving is efficiently radiated through the substrate.
(Formula 1) Thermal resistance (° C./W)=
Substrate thickness (m)
Thermal conductivity (W / m · K) x Electrothermal cross section (m2)
Therefore, the temperature rise of the LED chip is suppressed, and the light emission efficiency of each LED chip can be greatly suppressed from being reduced by heat. As a result, the emitted light flux does not decrease or the lifetime is not reduced by the heat generated by each LED chip.
And since the electrode for electrical connection with respect to an LED chip is formed by patterning, it is possible to connect each LED chip in series when it is made into a multichip.
Further, the horn 11a is finely processed on the silicon substrate by a semiconductor manufacturing technique, and other LED and other semiconductor devices such as an IC can be integrally formed. Therefore, an LED chip drive circuit is incorporated. In other words, it can be configured in a small size including the drive circuit.
The horn is formed by etching to a thickness that does not penetrate from the top surface to the bottom surface of the silicon substrate, and the electrodes extend from the bottom surface of the horn through the side surface along the surface of the silicon substrate. In the case where it is formed, the silicon substrate provided with the horn can be formed as a single structure type and can be manufactured by a simple process.
In this case, since the thickness of the silicon substrate at the bottom of the horn can be controlled by time management during the horn etching process, the thermal resistance of the silicon substrate with respect to the LED chip can be reduced.
In addition, the specific thickness in this case is preferably 0.1 to 0.5 mm from the viewpoint of thermal resistance and rigidity.
The silicon substrate is composed of a flat first substrate having electrodes formed on the surface, and a second substrate laminated on the first substrate, and the second substrate penetrates vertically. In the case where the horn is provided, the electrode and the wiring pattern having a complicated shape can be formed on the first substrate, so that a drive circuit for the LED chip can be easily incorporated.
When each LED chip is die-bonded on one electrode in the horn and wire-bonded to the other electrode, the LED chip provided with the electrode portions on the top and bottom, It can be easily mounted in the horn.
When each LED chip is mounted so as to straddle two electrodes in the horn, and the electrodes formed on both side edges below are electrically connected to the two electrodes in the horn, respectively. In other words, a so-called flip chip type LED chip having electrode portions on both side edges of the lower surface can be easily mounted in the horn.
When the silicon substrate is formed with the (100) surface as the surface and the side surface of the horn is formed with the (111) surface, the side surface with a predetermined inclination angle can be easily formed by anisotropic etching. Can be formed. At that time, the (111) plane is processed at 54.7 degrees.
The silicon substrate surface is the (100) surface and the horn side surface is the (111) surface. By changing the crystal surface of the substrate surface to (110) or off-substrate, etc. The angle of the horn side surface can be an angle other than 54.7 degrees. For example, when (110) is used as the surface and TMAH is used as the etchant, and the straight line portion of the mask pattern is parallel to the orientation flat corresponding to the (100) plane, the horn side surface has a vertical angle. The vertical side wall is useful for a light source having a structure in which the light emitting area of the element is intentionally reduced and the luminance is increased, for example, a vehicle headlamp.
In addition, even if the substrate has (100) as a surface, if EDP is used as an etching solution and the linear portion of the mask pattern is at an angle of 45 degrees with respect to the orientation flat, the inclined surface is 45 degrees. Appears. Further, if KOH is used as the etching solution under the same conditions, 90 degrees, that is, a right side wall appears. In the embodiment, only (100) is taken up and shown, but by freely changing the crystal orientation of the silicon substrate, the mask pattern, and the etching solution depending on the purpose of use, it is possible to freely manufacture a device.
When the side surface of the horn has a mirror surface on the surface, when the light emitted from the LED chip is incident on the side surface of the horn, it is reflected by the mirror surface provided on the surface. Thus, the reflectance becomes higher and the reflection efficiency is improved. Therefore, the light emission efficiency from the LED is improved. In this case, as the material of the mirror, the red LED is preferably Au or Al, and the blue LED is preferably Ag, Al, or an alloy thereof.
When an actuator is formed adjacent to the horn on the silicon substrate, the optical axis of the light emitted from the LED is swung by the operation of the actuator, or a part of the light emitting unit is By being shielded from light, the light distribution characteristics and the shape of the light emitting part can be changed. Therefore, when this LED is used as a light source for a headlight of an automobile, for example, it is possible to realize a so-called AFS function by switching between a traveling beam and a passing beam by the swinging.
When granular phosphors are mixed in the resin material forming the resin mold, light emitted from the LED chip strikes these phosphors and excites the phosphors, thereby exciting the phosphors. The excitation light and the light from the LED chip are mixed and the mixed light is emitted to the outside. Thereby, for example, white light is obtained.
When the horn is provided with a partition wall so as to surround each LED chip independently, the light that enters the adjacent LED chip emitted from each LED chip is blocked by the partition wall. Therefore, light absorption between the LED chips is prevented, and the light loss is reduced, so that the total light output emitted upward is improved.
When the upper end of the partition wall is flat at the same height as the upper surface of the silicon substrate, or when the upper end of the partition wall has a ridge line having the same height as the upper surface of the silicon substrate, the light is emitted from each LED chip. Light is reflected by the side surface of the horn and the side surface of the partition wall and guided upward, so that the total light output is improved and the interval between the LED chips can be appropriately adjusted.
When the upper end of the partition wall is provided with a ridge line having a height lower than the upper surface of the silicon substrate, the partition wall having the same height as the upper surface of the silicon substrate has an interval between the LED chips that is too long. By reducing the height, the interval between the LED chips can be optimally selected.
When the side surface of the partition wall is formed flat, convex, or concave, by selecting the side surface of the partition wall in an appropriate shape, light that is emitted from each LED chip and incident on the side surface of the partition wall However, when the light is reflected from the side surface of the partition wall, an optimum reflection characteristic can be obtained.
When the side wall of the partition wall is formed as a (111) plane, the side wall of the partition wall having a predetermined inclination angle, that is, 54.7 degrees, is formed simultaneously with the horn formation by liquid crystal anisotropic etching. can do. .
The silicon substrate has at least two contact holes penetrating vertically adjacent to the horn, and the electrodes extend from the horn through the corresponding contact holes to the lower edge of the contact hole. In this case, when the LED is mounted on the mounting substrate, each electrode passes through the contact hole and extends to the lower surface of the silicon substrate, so that each electrode is bonded to the connection portion on the mounting substrate. For example, reflow soldering or eutectic bonding can be used for direct connection without using a lead wire.
In this case, since the contact hole can be formed simultaneously with the formation of the horn on the silicon substrate, it can be processed easily and in large quantities by a semiconductor process.
The silicon substrate is provided with at least two contact edges penetrating vertically on the side surface, and each electrode extends from the horn to the lower edge of the contact edge through the corresponding contact edge. In the same manner as in the case of the contact hole, when mounting the LED on the mounting substrate, each electrode is connected to the connecting portion on the mounting substrate without using a bonding wire or a lead wire, for example, reflow soldering or It can be directly connected by eutectic bonding or the like.
In this case, the contact edge forms a contact hole at the same time when forming a horn on each silicon substrate on the wafer, and simultaneously cuts the contact hole when cutting each silicon substrate by dicing, Since it can be formed easily, it can be processed easily and in large quantities by a semiconductor process.
When the silicon substrate has a metal thin film on the lower surface at least in the horn region, the LED is firmly fixed to the mounting substrate by the metal thin film when mounted on the mounting substrate. In addition, the heat dissipation from the LED to the mounting board is improved.
According to the second configuration, in the completed LED, each LED chip is driven by supplying power to each LED chip from the outside via the electrode. And the light radiate | emitted from each LED chip is reflected by the bottom face or side surface of the horn of a silicon substrate, and radiate | emits upwards through a resin mold.
And since the board | substrate with which each LED chip is mounted is comprised from the silicon substrate with high heat conductivity, the heat | fever which generate | occur | produces from each LED chip at the time of a drive will be thermally radiated through a board | substrate efficiently. Therefore, the temperature rise of each LED chip is suppressed, and the light emission efficiency of each LED chip does not decrease. As a result, the emitted light flux does not decrease or the lifetime is not reduced by the heat generated by each LED chip.
In this case, since the silicon substrate provided with such a horn can be easily manufactured using an existing semiconductor manufacturing apparatus, the LED can be manufactured relatively easily and at a relatively low cost. It will be.
Thus, according to the present invention, the temperature rise due to heat generation can be satisfactorily suppressed, can be easily made into a multi-chip, can be easily configured in a small size, and a plurality of LED chips. When the LED is mounted, an LED and a method for manufacturing the LED are provided that can increase the amount of output light as much as possible and can be easily mounted without using a bonding wire or the like.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS.
The embodiments described below are preferable specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention particularly limits the present invention in the following description. As long as there is no description of the effect, it is not restricted to these aspects.
FIG. 1 shows the configuration of a first embodiment of an LED according to the present invention.
In FIG. 1, an LED 10 includes a silicon substrate 11, an LED chip 12 mounted in a horn 11a formed as a recessed portion of the silicon substrate 11, and a resin mold 13 made of a resin material filled in the horn 11a. , Is composed of.
The silicon substrate 11 is formed flat so that the surface thereof becomes a (100) plane.
The silicon substrate 11 includes a horn 11a formed by a recessed portion having a thickness that does not penetrate from the surface to the bottom surface.
The horn 11a is formed so that its side surface becomes the (111) plane by, for example, liquid phase crystal anisotropic etching using TMAH.
Since the side surface of the horn 11a is the (111) plane, the inclination angle with respect to the bottom surface is selected to be 54.7 degrees.
In this case, the horn 11a is processed to have an appropriate depth based on the time management of the etching process, and the bottom surface of the horn 11a is as close as possible to the bottom surface of the silicon substrate 11, that is, the silicon substrate on the bottom surface of the horn 11a. 11 can be made as thin as possible, thereby reducing the thermal resistance.
In FIG. 1, the silicon substrate 11 includes a pair of electrodes 14 and 15 extending from the bottom surface of the horn 11a to the surface via the left and right side surfaces.
These electrodes 14 and 15 are formed, for example, by forming a metal thin film on the surface of the silicon substrate 11 on which the horn 11a is formed, and then pattern etching the metal thin film.
Here, one electrode 14 includes a chip mounting portion 14a disposed in the central region of the bottom surface of the horn 11a, and the pattern of the mounting portion 14a has the same shape or outline as the terminal portion of the LED chip 12 to be attached. It is assumed that the self-alignment in which the pattern and the terminal are moved by the surface tension of the molten solder and the floating LED chip 12 having the same shape as a part thereof can be performed. A connecting portion 15a adjacent to the chip mounting portion 14a is provided on the bottom surface of the horn 11a.
Furthermore, in this case, the surfaces of both the electrodes 14 and 15 are formed as mirror surfaces at least in the side region. Both electrodes 14 may be provided with a separate mirror surface on the surface in at least the side region.
The LED chip 12 is an LED chip that generates blue light, for example, having a known configuration, and includes an electrode portion (not shown) on the upper surface and the lower surface, and is mounted on the bottom surface in the horn 11a of the silicon substrate 11, By die bonding on the chip mounting portion 14a of the one electrode 14, the lower electrode portion is electrically connected to the chip mounting portion 14a, and the upper electrode portion is bonded to a bonding wire 12a such as a gold wire. Thus, it is electrically connected to the connection portion 15 a of the other electrode 15.
The resin mold 13 is made of a translucent resin material such as an epoxy resin, and a granular phosphor 13a is mixed in the translucent resin material.
Therefore, after the resin mold 13 is filled in the horn 11a of the silicon substrate 11 and cured, the granular phosphors 13a are dispersed therein.
Here, the granular phosphor 13 a is a phosphor that generates, for example, yellow excitation light corresponding to the emission color of the LED chip 12. As a result, the phosphor 13a is excited by blue light from the LED chip 12, and yellow excitation light is generated. The yellow excitation light is mixed with the blue light from the LED chip 12, and white light is emitted to the outside. It comes out.
The LED 10 according to the embodiment of the present invention is configured as described above, and is manufactured as follows based on the manufacturing method according to the present invention.
That is, first, the horn 11a is formed on the surface which is the (100) plane of the flat silicon substrate 11 by liquid phase crystal anisotropic etching. In this case, for example, TMAH (tetramethyl ammonium hydroxide) is used as the etching agent.
This TMAH has a relatively large undercut due to etching and dimensional control is difficult, but has the advantages that the mask damage is small, an oxide film mask can be used, and the compatibility with CMOS is good. doing. On the other hand, when KOH is used as an etchant, for example, the undercut is small, but the compatibility with the CMOS is poor.
Note that the horn 11a formed by such etching has a side surface of (111) and has a slope with an inclination angle of 54.7 degrees.
And the horn 11a of desired depth can be formed by managing etching time suitably.
Before forming the electrode for the next step, the Si surface is covered with a thin SiO2 layer or Si3N4 layer, for example, by sputtering, CVD, thermal oxidation, or the like, and insulated.
Next, after forming a metal thin film to be an electrode over the entire surface of the silicon substrate 11 on which the horn 11a is formed, the electrodes 14 and 15 are formed by pattern etching the metal thin film. For pattern etching, it is preferable to use a method of forming a uniform resist film with respect to a three-dimensional shape, such as an electrodeposition resist or a spray resist. At this time, the surfaces of the electrodes 14 and 15 are formed as mirror surfaces by forming a thin film made of a highly reflective material such as aluminum or silver by sputtering or vapor deposition.
Subsequently, the LED chip 12 is mounted on the chip mounting portion 14a of one electrode 14 and die-bonded, and the electrode portion on the surface of the LED chip 12 is connected to the connection portion 15a of the other electrode 15 by the bonding wire 12a. Wire bonding is performed.
Thereafter, the resin material mixed with the granular phosphor 13a is filled in the horn 11a and cured. Thereby, the resin mold 13 is formed in the horn 11a. Thus, the present LED 10 is completed.
According to the LED 10 manufactured in this way, the LED chip 12 is driven by supplying power to the LED chip 12 from the outside via the electrodes 14 and 15.
Then, the light L emitted from the LED chip 12 is reflected with high reflectance directly or on the surface formed as the mirror surface of the electrodes 14 and 15 on the bottom surface or side surface of the horn 11a of the silicon substrate 11, and the resin mold The phosphor 13a hits the phosphor 13a in 13 and excites the phosphor 13a. Thereby, excitation light is generated from the phosphor 13a, is mixed with the blue light from the LED chip 12, and is emitted upward through the resin mold 13 as white light.
In this case, since the LED chip 12 is mounted on the silicon substrate 11 having a high thermal conductivity of, for example, 150 W / m · k, heat generated from the LED chip 12 during driving is efficiently radiated through the silicon substrate 11. Will be.
Therefore, the temperature rise of the LED chip 12 is suppressed, and the light emission efficiency of the LED chip 12 is not reduced by heat, and thereby the emitted light flux is reduced or the life is reduced by the heat generation of the LED chip. There is no.
In addition, since the electrodes 14 and 15 for electrical connection to the LED chip 12 are formed by patterning, the LED chips 12 can be connected to each other in series when they are made into a multi-chip, and an LED having a low Vf. There is no current concentrated on the chip 12.
Further, since the side surface of the horn 11a is constituted by the (111) surface, the side surface of the horn 11a is excellent in that it cannot be obtained by ordinary processing, for example, cutting processing of metal material, punching processing or resin molding. It will be formed as a mirror surface.
Further, it is possible to integrally form other semiconductor devices such as ICs on the silicon substrate 11 that is available at a relatively low cost by an existing semiconductor manufacturing process. Therefore, for example, a drive circuit for turning on and blinking the LED chip 12 can be incorporated, and the drive circuit and the drive circuit can be miniaturized.
In this way, according to the LED 10, by using the silicon substrate 11, the heat generated by the LED chip 12 can be efficiently radiated and easily formed into a multichip by the electrodes 14 and 15 formed by patterning. Since the LED chips 12 can be connected in series with each other, current concentration on the LED chip 12 having a low Vf due to variations can be avoided.
Moreover, since the LED 10 can be easily manufactured using an existing semiconductor manufacturing apparatus, no special capital investment is required, and the LED 10 can be manufactured at a relatively low cost.
FIG. 2 shows the configuration of a second embodiment of an LED according to the present invention.
2, the LED 20 has substantially the same configuration as that of the LED 10 shown in FIG. 1, and therefore, the same components are denoted by the same reference numerals and the description thereof is omitted.
That is, the LED 20 includes a silicon substrate 21, an LED chip 12 mounted in a horn 21a formed as a recessed portion of the silicon substrate 21, and a resin mold 13 made of a resin material filled in the horn 21a. It is configured.
Here, the silicon substrate 21 is configured to be laminated in two layers.
That is, the silicon substrate 21 includes a lower first substrate 22 and an upper second substrate 23.
The first substrate 22 is composed of a flat silicon substrate, and electrodes 14 and 15 are formed on the surface thereof by patterning a metal thin film. In this case, the electrodes 14 and 15 extend sideways along the surface of the first substrate 22, that is, through the inside of the silicon substrate 21.
On the other hand, the 2nd board | substrate 23 is formed flat so that the surface may become a (100) plane, and is provided with the horn 21a formed so that it might penetrate up and down.
Like the horn 11a in the LED 10 described above, the horn 21a is formed so that its side surface becomes a (111) plane by, for example, liquid phase crystal anisotropic etching with TMAH, and the entire side surface is a mirror surface. It has. As is well known, this mirror surface is obtained by forming a thin film of a material having a high reflectivity on the surface of the horn 11a by vapor deposition, plating or the like.
The LED 20 having such a configuration is manufactured as follows based on the manufacturing method according to the present invention.
That is, first, the electrodes 14 and 15 are formed on the surface of the silicon substrate to be the first substrate 22 by pattern etching of a metal thin film.
In parallel with this, the horn 21a is formed on the surface which is the (100) plane of the silicon substrate to be the second substrate 23 by liquid phase crystal anisotropic etching. In this case, since the horn 21a penetrates the second substrate 23 up and down, it is not necessary to set the depth of the horn 21a with very high accuracy, so that the time management of the etching process is facilitated.
Next, a mirror surface is formed on the side surface of the horn 21 a of the second substrate 23 by vapor deposition, plating, or the like, and then the second substrate 23 is bonded onto the first substrate 22.
Subsequently, the LED chip 12 is mounted and die bonded to the chip mounting portion 14a of the one electrode 14 exposed on the bottom surface of the horn 21a, and the electrode portion on the surface of the LED chip 12 is bonded to the bonding wire 12a. Thus, wire bonding is performed to the connection portion 15a of the other electrode 15.
Thereafter, the resin material mixed with the granular phosphor 13a is filled in the horn 21a and cured. Thereby, the resin mold 13 is formed in the horn 21a. Before forming the electrode, the Si surface is covered with a thin SiO2 layer or Si3N4 layer, for example, by sputtering, CVD, thermal oxidation, or the like, and insulated.
This completes the LED 20.
According to the LED 20 manufactured in this way, the silicon substrate 21 is configured in two layers and functions in the same manner as the LED 10 shown in FIG. A pattern can be formed, and the mirror surface is formed over the entire inner surface of the horn 21a of the second substrate 23, so that the light extraction efficiency to the outside is improved.
FIG. 3 shows the configuration of a third embodiment of an LED according to the present invention.
In FIG. 3, the LED 30 has the same configuration as the LED 20 shown in FIG. 2, and thus the same components are denoted by the same reference numerals and description thereof is omitted.
The LED 30 is formed in the vicinity of the center of the upper surface of the first substrate 22 so as to include chip mounting portions 14b and 15b in which the electrodes 14 and 15 are butted against each other with a space therebetween.
A so-called flip chip type LED chip 31 is mounted on these chip mounting portions 14b and 15b so that electrode portions provided on both side edges of the lower surface thereof are mounted and electrically connected. It has become so.
According to the LED 30 having such a configuration, it operates in the same manner as the LED 20 shown in FIG.
FIG. 4 shows the configuration of a fourth embodiment of an LED according to the present invention.
In FIG. 4, the LED 40 includes a thermoelectric bimorph actuator 41 as an actuator adjacent to the horn 11 a on the silicon substrate 11 with respect to the LED 10 according to FIG. 1, for example.
The thermoelectric bimorph actuator 41 has a publicly known configuration, and is formed on the silicon substrate 11 by etching using a so-called MEMS technique in a semiconductor manufacturing process.
When the thermoelectric bimorph actuator 41 is energized through an electrode (not shown), the thermoelectric bimorph actuator 41 is displaced on the semiconductor substrate 11 to cover a part of the upper surface of the horn 11a as shown in FIG. ing.
According to the LED 40 having such a configuration, light is emitted from the horn 11a of the silicon substrate 11 to the outside in the same manner as the LED 10 described above, and at the time of operation of the thermoelectric bimorph actuator 41, the upper end of the horn 11a. As a result, light is emitted from the entire light emitting portion due to the opening of the thermoelectric bimorph actuator 41, and when the thermoelectric bimorph actuator 41 is not in operation, a part of the light emitting portion is shielded by the thermoelectric bimorph actuator 41. It is possible to change the shape of the part. Therefore, for example, when the LED 40 is used as a light source for an automobile headlamp, the traveling beam and the passing beam can be switched.
The shape change of the light emitting portion by the opening at the upper end of the horn 11a can also be realized by another type of actuator that can be configured on the silicon substrate 11.
FIG. 6 shows the configuration of a fifth embodiment of an LED according to the present invention.
In FIG. 6, the LED 50 includes a vertical comb-shaped electrostatic actuator 51 as an actuator adjacent to the horn 11 a on the silicon substrate 11 with respect to the LED 10 according to FIG. 1, for example.
The vertical comb-shaped electrostatic actuator 51 has a configuration known as "Vertical Comb" itself, and is configured by etching on a silicon substrate 11 using so-called MEMS technology in a semiconductor manufacturing process. is there.
When the vertical comb electrostatic actuator 51 is energized through an electrode (not shown), it swings on the semiconductor substrate 11 as shown by an arrow A in FIG. A part of the light beam emitted from the upper surface is blocked.
According to the LED 50 having such a configuration, light is emitted from the horn 11a of the silicon substrate 11 to the outside as in the case of the LED 10 described above, and the vertical comb-tooth electrostatic actuator 51 is swung. The light distribution pattern is changed by selectively blocking a part of the light emitted from the entire light emitting portion through the opening at the upper end of the horn 11a. Therefore, for example, when the LED 40 is used as a light source for an automobile headlamp, a so-called AFS function can be realized.
FIG. 7 shows the configuration of a sixth embodiment of an LED according to the present invention.
In FIG. 7, the LED 60 has substantially the same configuration as the LED 10 shown in FIG. 1, and thus the same components are denoted by the same reference numerals and description thereof is omitted.
That is, the LED 60 is filled in the silicon substrate 11, the two LED chips 12 mounted in the two horns 11 a and 11 b formed side by side as the concave portions of the silicon substrate 11, and the horns 11 a and 11 b, respectively. And a resin mold 13 made of the prepared resin material.
Here, the silicon substrate 11 is formed flat so that the surface thereof becomes a (100) plane, and includes two horns 11a and 11b formed by recessed portions from the surface to an intermediate height.
These horns 11a and 11b are formed so that the side surfaces thereof become (111) planes by, for example, liquid phase crystal anisotropic etching with TMAH, similarly to the horn 11a in the LED 10 described above.
Further, the horns 11a and 11b are arranged apart from each other, and a partition wall 11c is defined between them.
The partition wall 11c has the same height as the upper surface of the silicon substrate 11, and the upper surface is formed flat. For example, the width of the upper surface is selected to be about several μm to several tens of μm.
In addition, as shown in FIG. 8, this partition wall 11c may be formed sharply so that an upper end may have a ridgeline. Thereby, the space | interval of each LED chip 12 can be made small, without changing the height of the partition wall 11c.
The silicon substrate 11 is provided with electrodes (not shown) that also serve as reflection mirrors on the bottom and side surfaces including the side surfaces of the partition walls 11c of the horns 11a and 11b in FIG. Both LED chips 12 are connected in series or in parallel, and power is supplied to these LED chips 12.
These electrodes are formed, for example, by forming a metal thin film such as silver on the surface of the silicon substrate 11 on which the horn 11a is formed, and then pattern etching the metal thin film.
Further, these electrodes extend from the side surfaces of the horns 11a and 11b to the upper surface of the silicon substrate 11, and the upper surface region uses bonding wires, lead wires, or soldering, silver paste or the like. Thus, it can be electrically connected to the connecting portion on the mounting substrate.
The LED 60 having such a configuration is manufactured as follows with reference to FIG. 9 based on the manufacturing method according to the present invention.
That is, first, a 525 μm-thick single crystal silicon wafer having a (100) surface planarized by optical polishing is used, and a diffusion furnace is formed on the surface of the silicon substrate 11 as shown in FIG. As a result, a thermal silicon oxide film 11d having a thickness of 500 nm is formed.
Then, as shown in FIG. 9B, a resist pattern is formed on the surface of the flat silicon substrate 11 by photolithography, and then the thermally oxidized silicon film 11d is etched by buffered hydrofluoric acid (BHF). The pattern of the thermally oxidized silicon film 11d is formed by removing.
Thereafter, as shown in FIG. 9C, after the horns 11a and 11b are simultaneously formed by, for example, liquid phase crystal anisotropic etching using a TMAH solution, all remaining thermal silicon oxide films are formed using a BHF solution. 11d is removed.
Next, as shown in FIG. 9D, a thermal silicon oxide film 11e having a thickness of 500 nm is formed on the entire surface of the silicon substrate 11 including the horns 11a and 11b again by the diffusion furnace, and the entire substrate is insulated. Thereafter, an electrode film 11f is formed by sputtering. The electrode film 11f is made of, for example, sequentially formed Ti with a thickness of 20 nm and Cu with a thickness of 200 nm.
Subsequently, as shown in FIG. 9E, a resist 11g is applied to the entire surface of the silicon substrate 11 including the horns 11a and 11b by electrodeposition resist or spray resist coating, and a resist pattern is formed by photolithography. Ning is performed.
Thereafter, as shown in FIG. 9F, the electrode film 11f is wet etched using the resist pattern 11g as a mask to form an electrode pattern 11h. In this case, the electrode pattern 11h is formed so as to connect both the LED chips 12 in series.
Next, as shown in FIG. 9G, a reflective mirror film 11i made of Ni having a thickness of 5 μm and Ag having a thickness of 3 μm is sequentially formed by electrolytic plating.
Subsequently, as shown in FIG. 9H, the LED chip 12 is mounted on the electrode film pattern 11f constituting one electrode formed on the bottom of each horn 11a, 11b, and solder or eutectic crystal is formed. In addition to die bonding by bonding, the electrode portion on the surface of the LED chip 12 is wire-bonded to the electrode film pattern 11f constituting the other electrode by a bonding wire 12a.
Thereafter, the horns 11a and 11b are filled with a resin material mixed with the granular phosphor 13a and cured. Thereby, the resin mold 13 is formed in the horn 11a. Thus, the present LED 60 is completed.
According to the LED 60 manufactured in this way, the LED 60 operates in the same manner as the LED 10 shown in FIG. 1, and the two LED chips 12 are arranged via the partition wall 11c. Will be suppressed, and the loss of output light will be reduced.
For example, when two LED chips 12 capable of obtaining a light output of 120 mW by applying a bias of 3 V and 350 mA alone were used and a bias of 6 V and 350 mA was applied, a light output of 240 mW was doubled. This is presumably because light absorption between the LED chips 12 was suppressed by the action of the partition wall 11c.
FIG. 10 shows a configuration of a seventh embodiment of the LED according to the present invention.
In FIG. 10, the LED 70 has substantially the same configuration as the LED 60 shown in FIG. 7, and therefore the same components are denoted by the same reference numerals and description thereof is omitted.
In this case, the partition wall 11c is different from the LED 60 shown in FIG. 7 only in that the height of the partition wall 11c forms a ridge line lower than the upper surface of the silicon substrate 11.
The LED 70 having such a configuration is manufactured as follows with reference to FIG. 11 based on the manufacturing method according to the present invention.
That is, first, as shown in FIG. 11A, a thermal silicon oxide film 11d having a thickness of 500 nm is formed on the surface of the silicon substrate 11 by a diffusion furnace.
Then, as shown in FIG. 11B, after a resist pattern is formed on the surface of the flat silicon substrate 11 by photolithography, the thermally oxidized silicon film 11d is removed by etching with a BHF solution. A pattern of the silicon film 11d is formed.
Thereafter, as shown in FIG. 11C, a silicon nitride film 11j having a thickness of 200 nm is formed on the entire surface of the silicon substrate 11 by plasma CVD.
Subsequently, as shown in FIG. 11D, the silicon nitride film 11j is patterned by thermal phosphoric acid treatment or plasma etching treatment using a resist mask (not shown) formed by photolithography. The
Next, as shown in FIG. 11 (E), after shallow horns 11a and 11b are simultaneously formed by anisotropic etching using, for example, a TMAH solution, as shown in FIG. After all the remaining silicon nitride film 11j is removed by phosphoric acid treatment or plasma etching treatment, the horns 11a and 11b separated by the partition wall 11c are again separated by liquid phase crystal anisotropic etching using a TMAH solution. One large horn containing will be formed.
Thereafter, after the thermal oxide film 11d is removed, as shown in FIG. 11G, the thermal oxide silicon film 11e having a thickness of 500 nm is again applied to the entire surface of the silicon substrate 11 including the horns 11a and 11b by the diffusion furnace. And the entire substrate is insulated.
Thereafter, in the same manner as in FIGS. 9D to 9H, the electrode film 11f is formed by sputtering, the electrode pattern 11h is formed by pattern etching, and the reflection mirror film 11i is formed on the surface of the electrode pattern 11h. Is formed, the LED chip 12 is die-bonded on the electrode pattern 11h in the horns 11a and 11b, wire-bonded to the adjacent electrode pattern 11h, and the granular phosphor 13a is further formed in the horns 11a and 11b. The resin mold 13 is formed in the horn 11a by being filled with the resin material mixed with and cured.
Thus, the LED 70 is completed.
According to the LED 70 having such a configuration, the LED 10 operates in the same manner as the LED 10 illustrated in FIG. 1 and the two LED chips 12 are disposed via the relatively low partition wall 11c. Absorption is suppressed, and loss of output light is reduced.
When the light emission characteristics of the LED 70 were evaluated in the same manner as the LED 60, double light output was obtained, and the distance between the LED chips 12 was shortened. Obtained.
In addition, in LED70 mentioned above, although the partition wall 11c is comprised as a flat inclined surface where the side surface has the same inclination angle as the horns 11a and 11b, it is not restricted to this, As shown in FIG. 11 has a two-layer structure similar to that of the LED 20, the partition wall 11 c is formed on the lower first substrate 22, and one large horn 71 is formed on the second substrate 23. Good. In this case, since the horn 71 and the partition wall 11c are separately formed by liquid phase crystal anisotropic etching, the horn 71 and the partition wall 11c can be formed at different inclination angles by appropriately controlling the etching.
Moreover, in LED60 and 70 mentioned above, although the partition wall 11c is comprised as an inclined surface with a flat side surface, it is not restricted to this, The conditions of anisotropic etching at the time of forming the partition wall 11c are changed. Alternatively, by changing from anisotropic etching to isotropic etching in the middle, the side surface of the partition wall 11c is concave as shown in FIG. 13 (A) or as shown in FIG. 13 (B). The side surface of the wall 11c may be formed in a convex shape.
In the case of FIG. 13B, the height of the partition wall 11c can be appropriately set by controlling the etching.
By such various shapes of the partition wall 11c, it is possible to control the reflection of the light emitted from the LED chip 12 by the side surface of the partition wall 11c, and the desired luminance distribution and light distribution characteristics can be controlled by this reflection control. It is possible to realize.
In this way, according to the LEDs 60 and 70 described above, by providing the partition wall 11c between the LED chips 12, light absorption between the LED chips 12 can be suppressed, so that the light output is increased. Can do.
Moreover, since the space | interval of the LED chip 12 can be set suitably based on the shape of the partition wall 11c, especially in the case of the partition wall 11c lower than the upper surface of the silicon substrate 11, the space | interval of the LED chip 12 is much further. Since the light distribution characteristic substantially similar to that of the point light source can be obtained, and when the light from each LED chip 12 is mixed, the light flux mixing effect from each LED chip 12 can be reduced. Will be enhanced.
In the LEDs 60 and 70, two LED chips 12 are mounted. However, the present invention is not limited to this, and three or more LED chips may be mounted. When green and blue LED chips are mounted, white light with good color rendering properties can be obtained by enhancing the mixing effect of light beams from the LED chips.
FIG. 14 shows the configuration of an eighth embodiment of an LED according to the present invention.
In FIG. 14, the LED 80 has substantially the same configuration as that of the LED 10 shown in FIG. 1.
Here, the silicon substrate 81 is formed flat so that the surface thereof becomes a (100) plane, and includes a horn 81a formed by a recessed portion from the surface to an intermediate height, and the horn 81a. Two contact holes 81b and 81c formed adjacent to both sides of the horn 81a in the sectional view of FIG. 14A.
Similar to the horn 81a, these contact holes 81b and 81c are formed so that the side surfaces thereof become the (111) plane by, for example, liquid phase crystal anisotropic etching using TMAH.
Then, in FIG. 14A, the silicon substrate 81 extends from the bottom surface of the horn 81a to the surface of the silicon substrate 81 through the left and right side surfaces and to the edge through the left and right contact holes 81b and 81c, respectively. A pair of extending electrodes 82 and 83 is provided.
These electrodes 82 and 83 are formed, for example, by forming a metal thin film on the surface of the silicon substrate 81 on which the horn 81a and the contact holes 81b and 81c are formed, and then pattern etching the metal thin film.
Here, one electrode 82 includes a chip mounting portion 82a disposed in the center region of the bottom surface of the horn 81a, and the other electrode 83 is disposed on the chip mounting portion 82a on the bottom surface of the horn 81a. An adjacent connecting portion 83a is provided.
Furthermore, in this case, the surfaces of both electrodes 82 and 83 are formed as mirror surfaces at least in the region of the side surface of the horn 81a. Note that both the electrodes 82 and 83 may be provided with separate mirror surfaces on the surfaces thereof at least in the side surface region.
The contact holes 81b and 81c reach the lower surface of the silicon substrate 81, and a part of the electrodes 82 and 83 formed also in the contact holes 81b and 81c are formed at the lower edges of the contact holes 81b and 81c. It is designed to be exposed downward.
That is, first, a 525 μm-thick single crystal silicon wafer having a (100) surface planarized by an optical polishing process is used, and a surface of a silicon substrate 81 is formed on a surface of a silicon substrate 81 by a diffusion furnace as shown in FIG. A thermal silicon oxide film 81d having a thickness of 500 nm is formed.
Then, as shown in FIG. 15B, a resist pattern is formed on the surface of the flat silicon substrate 81 by photolithography, and then the thermally oxidized silicon film 11d is removed by etching with a BHF solution. A pattern (for forming a contact hole) of the silicon film 11d is formed.
Thereafter, as shown in FIG. 15C, shallow recesses 81e and 81f surrounded by an inclined surface made of the (111) plane are formed by liquid phase crystal anisotropic etching with a TMAH solution heated to 85 ° C. After that, the silicon substrate 81 is once lifted from the TMAH solution, and as shown in FIG. 15 (D), a pattern of the thermally oxidized silicon film 11d (for horn formation) is formed again using a resist pattern by photolithography. Is done.
Next, as shown in FIG. 15E, after the horn 81a and the contact holes 81b and 81c are formed again by anisotropic etching using the TMAH solution, the silicon substrate 81 is pulled up from the TMAH solution.
Subsequently, as shown in FIG. 15F, all the remaining thermal silicon oxide film 81d is removed by the BHF solution, and the thermal oxide silicon having a thickness of 500 nm is again formed on the entire surface of the silicon substrate 81 by the diffusion furnace. A film 81g is formed, and the substrate surface is insulated.
Next, as shown in FIG. 15G, an electrode layer made of, for example, Ti and Cu and a reflective film 81h ′, which are sequentially formed by sputtering, are formed.
Thereafter, a resist is applied to the entire surface of the silicon substrate 81 by electrodeposition resist or spray resist coating, and the resist is patterned by photolithography. Using the resist pattern as a mask, the electrode layer and the reflective film are formed. By wet etching, as shown in FIG. 15H, electrode patterns 81h (electrodes 82 and 83) are formed. Thereafter, a film of Ni 2 μm and Ag 3 μm can be formed by, for example, electroplating to form an electrode / reflection film.
Next, as shown in FIG. 15 (I), the LED chip 12 is mounted on the electrode pattern 81h constituting one electrode formed on the bottom of the horn 81a, solder reflow method, eutectic bonding, While die-bonding with silver paste etc., the electrode part of the surface of LED chip 12 is wire-bonded with respect to the electrode pattern 81h which comprises the other electrode by the bonding wire 12a.
Thereafter, the resin material mixed with the granular phosphor 13a is filled in the horn 81a and cured. Thereby, as shown in FIG. 15J, the resin mold 13 is formed in the horn 81a.
Thus, the present LED 80 is completed.
When the LED 80 is mounted on the mounting substrate 84, as shown in FIG. 15K, the LED 80 package is placed at a predetermined position on the mounting substrate 84, and contact holes 81b, The electrodes 82 and 83 extending at the lower edge of 81c are connected to connection portions 84a and 84b made of a conductive pattern on the mounting substrate 84.
Thereby, the mounting of the LED 90 is completed.
According to the LED 80 having such a configuration, the electrodes 82 and 83 extending to the lower edges of the contact holes 81b and 81c are directly connected to the LED 10 shown in FIG. Can be connected by soldering or the like, so that no bonding wires or lead wires are required, and other components can be mounted adjacent to each other. is there. The LED 80 was subjected to evaluation of light emission characteristics by applying a bias of 3 V and 350 mA in the same manner as the LED 60. As a result, 110 mW of white light was obtained.
FIG. 16 shows the configuration of a ninth embodiment of an LED according to the present invention.
In FIG. 16, the LED 90 has substantially the same configuration as the LED 80 shown in FIG. 14, and thus the same components are denoted by the same reference numerals and description thereof is omitted.
That is, the LED 90 has a different configuration only in that contact edges 81 i and 81 j are provided at both ends of the silicon substrate 81 instead of the contact holes 81 b and 81 c.
Here, the contact edges 81i and 81j have a shape obtained by dividing the contact holes 81b and 81c in half at the center at both ends of the silicon substrate 81, respectively.
Similar to the horn 81a, these contact edges 81i, 81j are formed so that the side surfaces thereof become (111) planes by, for example, liquid phase crystal anisotropic etching using TMAH.
The electrodes 82 and 83 formed on the surface of the silicon substrate 81 are connected to the surface of the silicon substrate 81 from the bottom surface of the horn 81a through the left and right side surfaces in FIG. It extends to the lower edge in the edges 81i, 81j.
That is, as in the case of the LED 70 shown in FIG. 14, a horn 81a and contact holes 81b and 81c are formed on the surface of the silicon substrate 81 as shown in FIGS. 81h is formed.
At this time, the electrode pattern 81h (electrodes 82 and 83) extends from the horn 81a to the lower edge of each contact hole 81b and 81c through the upper surface of the silicon substrate 81.
Then, as shown in FIG. 17A, the silicon substrate 81 is cut up and down by dicing so as to pass through the centers of the contact holes 81b and 81c, respectively. As a result, the contact holes 81b and 81c are divided into halves to form contact edges 81i and 81j.
Thereafter, as shown in FIG. 17B, the LED chip 12 is mounted on the electrode pattern 81h constituting one electrode 82 formed on the bottom of the horn 81a, and solder reflow method, eutectic bonding, While die-bonding with silver paste etc., the electrode part of the surface of LED chip 12 is wire-bonded with respect to the electrode pattern 81h which comprises the other electrode 83 with the bonding wire 12a.
Thereafter, the resin material mixed with the granular phosphor 13a is filled in the horn 81a and cured. Thereby, as shown in FIG. 17C, the resin mold 13 is formed in the horn 81a.
When mounting the LED 90 on the mounting board 84, as shown in FIG. 17D, the package of the LED 90 is placed at a predetermined position on the mounting board 84, and contact edges 81i, The electrodes 82 and 83 extending at the lower edge of 81j are connected to the connecting portions 84a and 84b made of a conductive pattern on the mounting substrate 84.
In this case, since the contact edges 81i and 81j are provided instead of the contact holes, the cream solder can be easily potted with respect to the contact edges 81i and 81j at the time of mounting. improves.
FIG. 18 shows the configuration of a tenth embodiment of the LED according to the present invention.
In FIG. 18, the LED 100 has almost the same configuration as the LED 80 shown in FIG. 14, and thus the same components are denoted by the same reference numerals and description thereof is omitted.
That is, the LED 100 has a different configuration only in that the metal thin film 101 is provided in a region corresponding to the horn 81 a on the lower surface of the silicon substrate 81.
Here, the metal thin film 101 is made of, for example, Au or Ag, is formed by sputtering, and is patterned by photolithography and wet etching.
When the LED 100 is mounted on the mounting board 84, as shown in FIG. 18, the package of the LED 100 is placed at a predetermined position on the mounting board 84, and is soldered to the bottom of the contact holes 81b and 81c. The electrodes 82 and 83 extending to the edges are connected to connection portions 84 a and 84 b made of a conductive pattern on the mounting substrate 84.
Thereby, the mounting of the LED 100 is completed.
In this case, the metal thin film 101 provided on the lower surface of the silicon substrate 81 abuts on the heat radiation conductive pattern portion 84c on the mounting substrate 84, so that the heat generated from the LED chip 12 is transferred from the silicon substrate 81 to the metal thin film 101. As a result, the heat generated from the LED chip 12 can be effectively dissipated by being transmitted to the conductive pattern portion 84c for heat dissipation of the mounting substrate 84.
FIG. 19 shows the configuration of an eleventh embodiment of an LED according to the present invention.
In FIG. 19, an LED 110 is a modification of the LED 100 according to FIG. 18, and differs only in that the thermally oxidized silicon film 81g is removed in the region where the metal thin film 101 is formed on the lower surface of the silicon substrate 81. It has become.
According to the LED 110 having such a configuration, when the LED 110 is mounted on the heat sink 111, the package of the LED 110 is mounted on the surface of the heat sink 111 via the heat conductive sheet 112 as shown in FIG. 20. The contact holes 81b and 81c are placed on the lead frames 113 and 114, and the electrodes 82 and 83 extending to the lower edges of the contact holes 81b and 81c are formed on the lead frames 113 and 114, respectively, by hand reflow. Connect to each other.
In this case, the metal thin film 101 provided on the lower surface of the silicon substrate 81 directly contacts the lower surface of the silicon substrate 81 and also contacts the heat sink 111 via the thermal conductive sheet 112, thereby preventing the LED thin film 101 from the LED chip 12. By transferring heat to the heat sink 111 via the silicon substrate 81 and the heat conductive sheet 112, the heat resistance becomes very small, for example, 2 ° C./W, and the heat dissipation effect is further improved.
FIG. 21 shows the configuration of a twelfth embodiment of an LED according to the present invention.
In FIG. 21, the same components as those of the LED shown in FIG.
That is, this LED includes a silicon substrate 11, a horn 11a formed as a recessed portion of the silicon substrate 11, an LED chip 12 mounted at the center thereof, and a resin mold 13 made of a resin material filled in the horn 11a. And the lens 200.
This lens 200 is fixed by placing the resin mold 13 in the horn 11a and then placing it on the top of the horn while it is uncured, and then curing it. In particular, by forming the lens positioning recess 201 adjacent to the horn, it is possible to attach the lens accurately and easily, which is preferable. Since this recess 201 can be formed simultaneously by liquid phase etching at the time of horn formation, the accuracy of the mask can be brought into the lens positioning as it is.
In FIG. 21, the recess 201 is formed in two rectangular shapes, but may be three or more, or a substantially circular or polygonal shape surrounding the horn. Further, as shown in FIG. 22, the same effect can be obtained even if the horn has two stages and the upper part of the horn is used as a positioning recess.
FIG. 23 shows the configuration of a thirteenth embodiment of an LED according to the present invention.
That is, this LED includes a silicon substrate 11, a horn 11a formed as a recessed portion of the silicon substrate 11, an LED chip 12 mounted at the center thereof, and a resin mold 13 made of a resin material filled in the horn 11a. And a spherical lens 200.
The spherical lens 200 is fixed by placing the resin mold 13 in the horn 11a and then placing it on the top of the horn while it is uncured and then curing. In particular, if the horn has a square shape, the position of the lens can be uniquely determined by fixing the spherical lens 200 so as to be pressed against the edge of the horn at the time of fixing. Has the advantage that it is difficult to occur. The material of the lens itself may be a light transmissive material such as glass or a resin material, but since it is bonded and fixed by a mold resin, it is more preferable if it has good adhesion to the resin.
FIG. 24 shows the configuration of the fourteenth embodiment of the LED according to the present invention.
24, the same components as those of the LED shown in FIG. 16 are denoted by the same reference numerals, and the description thereof is omitted.
That is, this LED includes a silicon substrate, a horn formed as a recessed portion of the silicon substrate, a plurality of LED chips mounted at the center thereof, a resin mold made of a resin material filled in the horn, and a contact edge. It is composed of
Here, the contact edges are formed at the four corners of the rectangle, respectively, so that power can be supplied to the LED chip. As a result, for example, a red LED and a green LED can be mounted in the same horn, and light emission can be individually controlled through an external circuit. In FIG. 24, four electrodes are formed and two LEDs can be electrically connected and driven individually, but a contact edge is further formed on the side of the silicon substrate to electrically connect three or more LEDs. It may be possible to connect to.
FIG. 25 shows the configuration of a fifteenth embodiment of the LED according to the present invention.
Here, contact edges are formed at two adjacent corners of the four corners, and this element is mounted with the horn on which the LED chip is mounted facing in a direction parallel to the substrate. That is, this embodiment is a side view type surface mount LED.
FIG. 26 shows the configuration of a sixteenth embodiment of the LED according to the present invention.
That is, this LED includes a silicon substrate, a horn formed as a recessed portion of the silicon substrate, a plurality of LED chips mounted at the center thereof, a resin mold made of a resin material filled in the horn, and a lead frame. 17a and 17b. The difference from FIG. 1 is that lead frames 17a and 17b electrically connected to the electrodes are attached to the left and right of the silicon substrate. By doing so, a thin surface mount element suitable for mounting can be manufactured, which is preferable.
When manufacturing such an LED, it is more preferable to form shallow recesses 16a and 16b for positioning the lead frame on the silicon substrate. Such recesses 16a and 16b can be formed at the same time when the horn is made by liquid phase etching, so that no extra process is required.
In order to connect the lead frame to the electrode wiring part on the silicon substrate, a conductive paste or the like is used to make electrical contact. More preferably, eutectic or laser fusion is used. In this case, the mechanical strength of bonding between the lead frame and the silicon substrate is high, and it becomes easy to handle during mounting.
FIG. 27 shows an element in which a silicon substrate to which a lead frame is attached is integrally formed of resin. In this case, since resin enters between the lead frame and the silicon substrate, a short circuit between the side surface of the silicon substrate and the lead frame can be prevented, and the reliability is further improved. In addition, since the lead frame is fixed with resin, the mechanical strength is increased and it is suitable for handling.
It is also possible to form a metal thin film in a portion corresponding to the back side of the LED chip on the back side of the silicon substrate, and fix the lead frame and the metal thin film portion to the wiring board by a solder flow process. This is preferable because the heat radiation is very good because the portion directly under the LED chip directly contacts the wiring board via the solder.
In the above-described embodiment, the phosphor mixed in the resin mold is excited by the blue light from the LED chip, and the white light is emitted by the mixed color of the excitation light and the blue light from the LED chip. However, it is obvious that the LED may emit the light from the LED chip to the outside as it is by using a resin mold in which no phosphor is mixed.
In the above-described embodiment, only the LED chip 12 is mounted on the silicon substrate. However, the present invention is not limited to this, and other semiconductor devices are integrally formed on the silicon substrate by a semiconductor manufacturing process. Obviously it may be.
Furthermore, in the above-described embodiment, the mirror surface is provided on the side wall of the horn on the silicon substrate. However, the present invention is not limited to this, and it is obvious that the mirror surface may not be provided.
Since the LED according to the present invention can be configured in a small size at a relatively low cost by mounting the LED chip in a horn formed on a silicon substrate, it can be easily adapted to multi-chip. It can be used as a light source for various devices such as LED strobes, LED headlamps, LED illumination modules, various sensors using LEDs, or LED backlight modules.
It is a schematic sectional drawing which shows the structure of 1st embodiment of LED by this invention. It is a schematic sectional drawing which shows the structure of 2nd embodiment of LED by this invention. It is a schematic sectional drawing which shows the structure of 3rd embodiment of LED by this invention. It is a schematic plan view which shows the structure of 4th embodiment of LED by this invention. It is a schematic plan view which shows the state at the time of the thermoelectric actuator operation | movement in LED of FIG. It is a schematic perspective view which shows the structure of 5th embodiment of LED by this invention. It is (A) schematic plan view and (B) schematic sectional drawing which show the structure of 6th embodiment of LED by this invention. It is (A) schematic plan view and (B) schematic sectional drawing which show the modification of LED of FIG. It is process drawing which shows the process of the manufacturing method of LED of FIG. 7 in order. It is (A) schematic plan view and (B) schematic sectional drawing which show the structure of 7th embodiment of LED by this invention. It is process drawing which shows the process of the manufacturing method of LED of FIG. 10 in order. It is a schematic sectional drawing which shows the modification of LED of FIG. It is a schematic sectional drawing which shows the other modification of LED of FIG. It is (A) schematic sectional drawing and (B) schematic plan view which show the structure of 8th embodiment of LED by this invention. It is process drawing which shows the process of the manufacturing method of LED of FIG. 14 in order. It is (A) schematic sectional drawing and (B) schematic plan view which show the structure of 9th embodiment of LED by this invention. It is process drawing which shows the principal part of the process of the manufacturing method of LED of FIG. 16 in order. It is a schematic sectional drawing which shows the mounting state of 10th Embodiment of LED by this invention. It is (A) schematic sectional drawing and (B) schematic plan view which show the structure of 11th Embodiment of LED by this invention. It is a schematic sectional drawing which shows the mounting state to the heat sink of LED of FIG. It is a schematic perspective view which shows the mounting state of 12th Embodiment of LED by this invention. It is a schematic front view which shows the mounting state of 12th embodiment of LED by this invention. It is the (A) schematic front view and (B) schematic plan view which show the mounting state of 13th embodiment of LED by this invention. It is a schematic perspective view which shows the mounting state of 14th embodiment of LED by this invention. It is a schematic perspective view which shows the mounting state of 15th Embodiment of LED by this invention. It is a schematic perspective view which shows the mounting state of 16th Embodiment of LED by this invention. It is a schematic front view which shows the mounting state of 16th Embodiment of LED by this invention. It is a schematic sectional drawing which shows the structure of an example of the conventional LED. It is a schematic sectional drawing which shows the structure of the other example of the conventional LED. It is a schematic sectional drawing which shows the structure of the other example of the conventional LED. It is a schematic sectional drawing which shows the structure of the modification of the conventional LED shown in FIG. It is a schematic sectional drawing which shows the structure of the other example of the conventional LED. It is a schematic sectional drawing which shows the mounting state of the conventional LED shown in FIG.
11 Silicon substrate 11a, 11b Horn 11c Partition wall 12 LED chip 12a Bonding wire 13 Resin mold 13a Phosphor 14,15 Electrode 14a, 14b, 15b Chip mounting part 15a Connection part 20 LED
21 Silicon substrate 21a Horn 22 First substrate 23 Second substrate 30 LED
31 LED chip (flip chip)
41 Thermoelectric Bimorph Actuator 50 LED
51 Vertical comb-shaped electrostatic actuator 60, 70, 80 LED
81 Silicon substrate 81a Horn 81b, 81c Contact hole 81i, 81j Contact edge 82, 83 Electrode 90, 100, 110 LED
101 Metal thin film 111 Heat sink 112 Thermal conductive sheet 113, 114 Lead frame
A silicon substrate;
A horn formed by liquid phase etching on the substrate;
At least two electrodes formed in the horn;
At least one LED chip mounted in the horn and electrically connected to the electrode;
LED characterized by including.
The LED according to claim 1, wherein the electrode is drawn from the horn, and the lead frame is further in electrical contact.
The horn is formed by etching to a depth that does not penetrate from the top surface to the bottom surface of the substrate,
2. The LED according to claim 1, wherein each of the electrodes is formed to extend along a surface of the silicon substrate from a bottom surface of the horn through a side surface.
The silicon substrate is composed of a flat first substrate having electrodes formed on the surface, and a second substrate laminated on the first substrate, and the second substrate penetrates vertically. The LED according to claim 1, further comprising a horn.
5. The LED chip according to claim 1, wherein each LED chip is die-bonded on one electrode in the horn and wire-bonded to the other electrode. LED of description.
Each LED chip is mounted so as to straddle two electrodes in the horn, and the electrodes formed on both side edges below are electrically connected to the two electrodes in the horn, respectively. The LED according to claim 1, characterized in that:
The LED according to any one of claims 1 to 6, wherein a side surface of the horn is formed as one of {111}, {110}, and {100} planes.
The LED according to claim 1, wherein a side surface of the horn has a mirror surface on the surface.
The LED according to claim 1, wherein an actuator is formed on the silicon substrate.
The LED according to claim 1, wherein an electronic circuit is formed on the silicon substrate.
The LED according to any one of claims 1 to 8, wherein the electronic circuit is at least one of a photodiode, a transistor, and an IC.
The LED according to claim 1, wherein the horn is filled with a resin.
The LED according to claim 12, wherein the resin contains a phosphor.
The LED according to any one of claims 1 to 13, wherein the horn includes a partition wall so as to surround each LED chip independently.
The LED according to claim 14, wherein an upper end of the partition wall is flat at the same height as an upper surface of the silicon substrate.
The LED according to claim 14, wherein an upper end of the partition wall includes a ridge line having the same height as the upper surface of the silicon substrate.
The LED according to claim 14, wherein an upper end of the partition wall is provided with a ridge line having a height lower than an upper surface of the silicon substrate.
The LED according to any one of claims 14 to 17, wherein a side surface of the partition wall is formed flat, convex, or concave.
18. The LED according to claim 14, wherein a side surface of the partition wall is formed as a {111}, {110}, or {100} plane.
At least two contact holes formed by liquid phase etching on the substrate;
At least two electrodes extending from within the horn to the lower edge of the contact hole;
At least two contact edges formed on the substrate by liquid phase etching;
At least two electrodes extending from within the horn to the lower edge of the contact edge;
The LED according to claim 21, wherein the silicon substrate is rectangular when viewed from the side on which the LED chip is mounted, and the contact edge is formed at at least one of four corners of the rectangle.
The LED according to claim 20 or 21, wherein the silicon substrate includes a metal thin film on a lower surface thereof at least in a horn region.
The LED according to claim 23, wherein the silicon substrate is installed on a heat dissipation member via the metal thin film.
The LED according to claim 1, wherein a lens is arranged on the horn.
The LED according to claim 25, wherein the lens is a convex lens.
26. The LED of claim 25, wherein the lens is a spherical lens.
26. The LED according to claim 25, wherein an alignment recess for the lens is formed around a horn of the silicon substrate.
Forming a horn by liquid phase etching on a silicon substrate;
Forming at least two electrodes in the horn;
Mounting at least one LED chip in the horn and connecting to the electrode;
The manufacturing method of LED which contains at least.
Filling a resin material into the horn to form a resin mold;
The manufacturing method of LED of Claim 29 containing this.
30. The LED according to claim 29, wherein in the step of forming a horn by liquid phase etching with respect to the silicon substrate, the inside of the horn is formed adjacently and a partition is formed between the horns. Manufacturing method.
32. The method of manufacturing an LED according to claim 31, wherein an upper end of the partition is formed at the same height as or lower than the silicon substrate.
The LED manufacturing method according to claim 31 or 32, wherein a surface of the partition is formed in a concave shape or a convex shape.
Forming an oxide film on the surface of the silicon substrate;
Patterning so as to expose a portion to be a contact hole with respect to the oxide film;
Forming a shallow depression in a portion to be a contact hole by liquid phase etching in the silicon substrate;
Patterning so as to expose a portion serving as a horn with respect to the oxide film;
Forming a horn and a contact hole by liquid phase etching in the silicon substrate;
Forming an insulating film on the surface of the silicon substrate;
Forming an electrode pattern on the silicon substrate;
Die-bonding an LED chip in the horn and electrically connecting to the electrode pattern;
Dividing the silicon substrate. A method for manufacturing an LED, comprising:
Patterning the exposed portion of the oxide film to be a through hole; and
Forming a shallow depression in a portion to be a through hole by liquid phase etching in the silicon substrate;
Forming a horn and a through hole by liquid phase etching in the silicon substrate;
And a step of dividing the silicon substrate while forming a contact edge so as to cross the through-hole.
Forming an electrode on the first substrate;
Preparing a silicon substrate as the second substrate, forming a through hole in the silicon substrate by liquid phase etching, and forming a horn on the sidewall;
Bonding the first substrate and the second substrate so that the electrode can be seen at the bottom of the through hole;
And a step of die-bonding an LED chip to the electrode.
The process for forming an LED according to claim 36, comprising: a step of forming a mirror surface on the inner surface of the through hole and / or a step of resin molding and / or a step of insulating the Si surface with an oxide film. Method.
JP2004338624A 2004-02-23 2004-11-24 LED and manufacturing method thereof Active JP4572312B2 (en)
JP2004046173 2004-02-23
JP2004338624A JP4572312B2 (en) 2004-02-23 2004-11-24 LED and manufacturing method thereof
US11/062,772 US20060001055A1 (en) 2004-02-23 2005-02-22 Led and fabrication method of same
DE102005008339A DE102005008339A1 (en) 2004-02-23 2005-02-23 Light-emitting diode (LED) and manufacturing method therefor
JP2005277380A5 JP2005277380A5 (en) 2005-10-06
JP4572312B2 JP4572312B2 (en) 2010-11-04
JP2004338624A Active JP4572312B2 (en) 2004-02-23 2004-11-24 LED and manufacturing method thereof
JP2007134602A (en) * 2005-11-11 2007-05-31 Stanley Electric Co Ltd Surface mount semiconductor light emitting device
JP2007157805A (en) * 2005-12-01 2007-06-21 Stanley Electric Co Ltd Led package, method of manufacturing light-emitting device and led package
JP2007184425A (en) * 2006-01-06 2007-07-19 Shinko Electric Ind Co Ltd Light emitting device and method of manufacturing same
JP2007194385A (en) * 2006-01-19 2007-08-02 Stanley Electric Co Ltd Semiconductor light emitting device, and method of manufacturing same
JP2007266314A (en) * 2006-03-28 2007-10-11 Matsushita Electric Works Ltd Light-emitting device
JP2007273972A (en) * 2006-03-08 2007-10-18 Mitsubishi Electric Corp Light emitting device
JP2007288097A (en) * 2006-04-20 2007-11-01 Showa Denko Kk Printed-circuit board and mounting structure of flip-chip semiconductor light-emitting device, and light-emitting diode lamp
JP2007294834A (en) * 2006-03-28 2007-11-08 Matsushita Electric Works Ltd Light emitting device
JP2007311482A (en) * 2006-05-17 2007-11-29 Ichikoh Ind Ltd Fixing structure for light-emitting diode
JP2007311786A (en) * 2006-05-18 2007-11-29 Samsung Electro Mech Co Ltd Light emitting device package, and light emitting device package array
JP2008016565A (en) * 2006-07-04 2008-01-24 Shinko Electric Ind Co Ltd Light-emitting element receiving body, manufacturing method thereof, and light-emitting device
JP2008034530A (en) * 2006-07-27 2008-02-14 Stanley Electric Co Ltd Led package, light-emitting device using it, and method of manufacturing led package
JP2008034486A (en) * 2006-07-26 2008-02-14 Matsushita Electric Works Ltd Light-emitting apparatus
JP2008072102A (en) * 2006-08-21 2008-03-27 Cree Inc Method of forming semiconductor light emitting device package by liquid injection molding and molded semiconductor light emitting device strip
JP2008147511A (en) * 2006-12-12 2008-06-26 Stanley Electric Co Ltd Semiconductor light emitting device and its manufacturing method
JP2008153421A (en) * 2006-12-18 2008-07-03 Stanley Electric Co Ltd Semiconductor light-emitting device and its manufacturing method
JP2008160106A (en) * 2006-12-13 2008-07-10 Silicon Base Development Inc Side surface light emitting diode package, and manufacturing method thereof
JP2009164225A (en) * 2007-12-28 2009-07-23 Stanley Electric Co Ltd Light-emitting device and its manufacturing method
JP2009200163A (en) * 2008-02-20 2009-09-03 Toyoda Gosei Co Ltd Led lamp module
JP2009534818A (en) * 2006-04-21 2009-09-24 レクセディス ライティング ゲー・エム・ベー・ハー LED platform with LED chip on film
JP2010130008A (en) * 2008-11-25 2010-06-10 Chi Mei Lighting Technology Corp Side view type led package structure, and manufacturing method and application thereof
JP2011029640A (en) * 2009-07-24 2011-02-10 Lg Innotek Co Ltd Light-emitting device package, and method for fabricating the same
WO2011037185A1 (en) * 2009-09-24 2011-03-31 京セラ株式会社 Mounting substrate, light emitting body, and method for manufacturing mounting substrate
JP2011086619A (en) * 2009-10-16 2011-04-28 Foxsemicon Integrated Technology Inc Illumination device
JP2011101054A (en) * 2009-07-03 2011-05-19 Sharp Corp Substrate for mounting semiconductor light emitting element, backlight chassis, display device, and television receiver
KR101072212B1 (en) 2010-01-05 2011-10-10 엘지이노텍 주식회사 Light emitting device and method for fabricating the same
WO2012057276A1 (en) * 2010-10-29 2012-05-03 東芝ライテック株式会社 Light-emitting module, and lighting equipment
JP2012199259A (en) * 2012-07-27 2012-10-18 Liquid Design Systems:Kk Led lighting system
WO2012141136A1 (en) * 2011-04-11 2012-10-18 株式会社日立製作所 Aluminum electroplating solution
JPWO2010119830A1 (en) * 2009-04-13 2012-10-22 パナソニック株式会社 Light emitting diode
JP2012216868A (en) * 2012-07-10 2012-11-08 Shinko Electric Ind Co Ltd Package for electronic component and electronic component device
US8610141B2 (en) 2010-04-15 2013-12-17 Liquid Design Systems, Inc. Three-dimensional LED substrate and LED lighting device
JP2014078686A (en) * 2012-08-31 2014-05-01 Nichia Chem Ind Ltd Light emitting device and manufacturing method of the same
KR101463039B1 (en) * 2008-02-15 2014-11-19 삼성디스플레이 주식회사 Backlight unit and display having the same
JP2015079835A (en) * 2013-10-16 2015-04-23 大日本印刷株式会社 Optical semiconductor device, lead frame for optical semiconductor device, and manufacturing method thereof
JP2016184708A (en) * 2015-03-26 2016-10-20 日亜化学工業株式会社 Light emission device
JP6033982B1 (en) * 2010-06-01 2016-11-30 エルジー イノテック カンパニー リミテッド Light emitting device package
US10249514B2 (en) 2015-08-07 2019-04-02 Rohm Co., Ltd. Semiconductor device and manufacturing method thereof
US10276463B2 (en) 2016-10-17 2019-04-30 Rohm Co., Ltd. Semiconductor device and method for manufacturing the same
US10347550B2 (en) 2016-09-15 2019-07-09 Rohm Co., Ltd. Semiconductor package and method of making the same
US10410944B2 (en) 2017-05-10 2019-09-10 Rohm Co., Ltd. Semiconductor device
TWI302382B (en) * 2004-09-15 2008-10-21 Yu Nung Shen Light emitting diode package and its packaging method
US20060125716A1 (en) * 2004-12-10 2006-06-15 Wong Lye Y Light-emitting diode display with compartment
CA2592055A1 (en) 2004-12-27 2006-07-06 Quantum Paper, Inc. Addressable and printable emissive display
JP4698234B2 (en) * 2005-01-21 2011-06-08 スタンレー電気株式会社 Surface mount semiconductor device
JP2006210402A (en) * 2005-01-25 2006-08-10 Matsushita Electric Ind Co Ltd Semiconductor device
KR100663906B1 (en) * 2005-03-14 2007-01-02 서울반도체 주식회사 Light emitting apparatus
WO2006106901A1 (en) * 2005-04-01 2006-10-12 Matsushita Electric Industrial Co., Ltd. Led component and method for manufacturing same
CN100539219C (en) * 2005-04-28 2009-09-09 皇家飞利浦电子股份有限公司 Light source comprising LED arranged in recess
US20060292747A1 (en) * 2005-06-27 2006-12-28 Loh Ban P Top-surface-mount power light emitter with integral heat sink
KR101232505B1 (en) * 2005-06-30 2013-02-12 엘지디스플레이 주식회사 Method of fabrication light emission diode package and backlight unit and liquid crystal display device
KR100780176B1 (en) * 2005-11-25 2007-11-27 삼성전기주식회사 Side-view light emitting diode package
KR100734881B1 (en) * 2005-12-08 2007-07-03 한국전자통신연구원 Silicon-based light emitting diode using side reflecting mirror
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
CN101421844A (en) * 2006-04-10 2009-04-29 皇家飞利浦电子股份有限公司 LED module
US8866007B2 (en) * 2006-06-07 2014-10-21 California Institute Of Technology Plasmonic photovoltaics
KR100854328B1 (en) * 2006-07-07 2008-08-28 엘지이노텍 주식회사 LED package and method for making the same
US20090273005A1 (en) * 2006-07-24 2009-11-05 Hung-Yi Lin Opto-electronic package structure having silicon-substrate and method of forming the same
US20090273004A1 (en) * 2006-07-24 2009-11-05 Hung-Yi Lin Chip package structure and method of making the same
US20080035942A1 (en) 2006-08-08 2008-02-14 Lg Electronics Inc. Light emitting device package and method for manufacturing the same
DE102006040641A1 (en) * 2006-08-30 2008-03-13 Robert Bosch Gmbh Light module
TWI324403B (en) * 2006-11-07 2010-05-01 Opto Tech Corp Light emitting diode and method manufacturing the same
US8283683B2 (en) 2006-11-07 2012-10-09 Opto Tech Corporation Chip-bonding light emitting diode chip
US9061450B2 (en) * 2007-02-12 2015-06-23 Cree, Inc. Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding
US7732234B2 (en) * 2007-02-15 2010-06-08 Hymite A/S Fabrication process for package with light emitting device on a sub-mount
EP1988577B1 (en) * 2007-04-30 2017-04-05 Tridonic Jennersdorf GmbH Light emitting diode module with silicon platform
US9534772B2 (en) 2007-05-31 2017-01-03 Nthdegree Technologies Worldwide Inc Apparatus with light emitting diodes
US8456393B2 (en) 2007-05-31 2013-06-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US8846457B2 (en) 2007-05-31 2014-09-30 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US9419179B2 (en) 2007-05-31 2016-08-16 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US9018833B2 (en) 2007-05-31 2015-04-28 Nthdegree Technologies Worldwide Inc Apparatus with light emitting or absorbing diodes
JP2010529599A (en) * 2007-05-31 2010-08-26 エンスディグリー テクノロジーズ ワールドワイド インコーポレーテッド Method of manufacturing an addressable and static electronic display, power generator or other electronic device
US8877101B2 (en) 2007-05-31 2014-11-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, power generating or other electronic apparatus
US8889216B2 (en) 2007-05-31 2014-11-18 Nthdegree Technologies Worldwide Inc Method of manufacturing addressable and static electronic displays
US7972031B2 (en) * 2007-05-31 2011-07-05 Nthdegree Technologies Worldwide Inc Addressable or static light emitting or electronic apparatus
US9425357B2 (en) 2007-05-31 2016-08-23 Nthdegree Technologies Worldwide Inc. Diode for a printable composition
US8852467B2 (en) 2007-05-31 2014-10-07 Nthdegree Technologies Worldwide Inc Method of manufacturing a printable composition of a liquid or gel suspension of diodes
US8767983B2 (en) * 2007-06-01 2014-07-01 Infineon Technologies Ag Module including a micro-electro-mechanical microphone
DE102007036226A1 (en) * 2007-08-02 2009-02-05 Perkinelmer Elcos Gmbh LED mounting structure, LED assembly, LED assembly socket, method of forming a mounting structure
KR100877881B1 (en) * 2007-09-06 2009-01-08 엘지이노텍 주식회사 Lighting emitting diode package and fabrication method thereof
TWI467789B (en) 2007-11-01 2015-01-01 Insiava Pty Ltd Optoelectronic device with light directing arrangement and method of forming the arrangement
DE102008011153A1 (en) * 2007-11-27 2009-05-28 Osram Opto Semiconductors Gmbh Arrangement with at least two light-emitting semiconductor components and method for producing an arrangement with at least two light-emitting semiconductor components
US8384997B2 (en) 2008-01-21 2013-02-26 Primesense Ltd Optical pattern projection
CN101984767B (en) * 2008-01-21 2014-01-29 普莱姆森斯有限公司 Optical designs for zero order reduction
DE102008021659A1 (en) * 2008-04-30 2009-11-05 Ledon Lighting Jennersdorf Gmbh LED element with a thin film semiconductor device based on gallium nitride
US7992332B2 (en) 2008-05-13 2011-08-09 Nthdegree Technologies Worldwide Inc. Apparatuses for providing power for illumination of a display object
US8127477B2 (en) 2008-05-13 2012-03-06 Nthdegree Technologies Worldwide Inc Illuminating display systems
KR100992778B1 (en) * 2008-05-23 2010-11-05 엘지이노텍 주식회사 Light emitting device package and method for manufacturing the same
US8490678B2 (en) * 2008-06-02 2013-07-23 Gerald Ho Kim Silicon-based thermal energy transfer device and apparatus
US8130506B2 (en) * 2008-06-19 2012-03-06 Infineon Technologies Ag Sensor module
US8238401B2 (en) * 2008-08-25 2012-08-07 Gerald Ho Kim Silicon-based lens support structure for diode laser
JP2010226078A (en) * 2009-02-24 2010-10-07 Sony Corp Light-emitting device and method of manufacturing same
WO2010151600A1 (en) 2009-06-27 2010-12-29 Michael Tischler High efficiency leds and led lamps
CN102576789B (en) * 2009-09-20 2016-08-24 维亚甘有限公司 The wafer-class encapsulation of electronic device
JP5588310B2 (en) * 2009-11-15 2014-09-10 プライムセンス リミテッド Optical projector with beam monitor
US9480133B2 (en) 2010-01-04 2016-10-25 Cooledge Lighting Inc. Light-emitting element repair in array-based lighting devices
US8653539B2 (en) 2010-01-04 2014-02-18 Cooledge Lighting, Inc. Failure mitigation in arrays of light-emitting devices
US20110188054A1 (en) * 2010-02-02 2011-08-04 Primesense Ltd Integrated photonics module for optical projection
US20110187878A1 (en) 2010-02-02 2011-08-04 Primesense Ltd. Synchronization of projected illumination with rolling shutter of image sensor
US9013890B2 (en) * 2010-03-26 2015-04-21 Infineon Technologies Ag Semiconductor packages and methods for producing the same
KR101028329B1 (en) * 2010-04-28 2011-04-12 엘지이노텍 주식회사 Light emitting device package and fabricating method thereof
KR101039994B1 (en) * 2010-05-24 2011-06-09 엘지이노텍 주식회사 Light emitting device and light unit having thereof
JP5512888B2 (en) 2010-06-29 2014-06-04 クーレッジ ライティング インコーポレイテッド Electronic device with flexible substrate
US9036158B2 (en) 2010-08-11 2015-05-19 Apple Inc. Pattern projector
WO2012020380A1 (en) 2010-08-11 2012-02-16 Primesense Ltd. Scanning projectors and image capture modules for 3d mapping
TWI414050B (en) * 2010-10-19 2013-11-01 Unistars Package board and manufacturing method thereof
US20120268928A1 (en) * 2010-10-26 2012-10-25 Sargent Robert L Large single chip led device for high intensity packing
US9066087B2 (en) 2010-11-19 2015-06-23 Apple Inc. Depth mapping using time-coded illumination
US9167138B2 (en) 2010-12-06 2015-10-20 Apple Inc. Pattern projection and imaging using lens arrays
KR101883839B1 (en) * 2010-12-07 2018-08-30 엘지이노텍 주식회사 Light emitting device module and bcklight unit including the same
DE202010016958U1 (en) * 2010-12-23 2011-06-27 Automotive Lighting Reutlingen GmbH, 72762 Luminous module for a lighting device of a motor vehicle with arranged on a silicon substrate semiconductor light sources
JP2012142410A (en) * 2010-12-28 2012-07-26 Rohm Co Ltd Light emitting element unit and method for manufacturing the same, light emitting element package, and lighting system
KR20120093679A (en) * 2011-02-15 2012-08-23 삼성전자주식회사 Light emitting device package and manufacturing method thereof
DE102011007328A1 (en) * 2011-04-13 2012-10-18 Robert Bosch Gmbh Device and method for influencing a radiation characteristic of a light emitting diode
KR101865272B1 (en) * 2011-07-26 2018-06-07 삼성전자주식회사 Light emitting diode module and method for manufacturing the same
US8908277B2 (en) 2011-08-09 2014-12-09 Apple Inc Lens array projector
US8749796B2 (en) 2011-08-09 2014-06-10 Primesense Ltd. Projectors of structured light
DE102011113483A1 (en) * 2011-09-13 2013-03-14 Osram Opto Semiconductors Gmbh Method for producing a plurality of optoelectronic components and optoelectronic component
US9329080B2 (en) 2012-02-15 2016-05-03 Aplle Inc. Modular optics for scanning engine having beam combining optics with a prism intercepted by both beam axis and collection axis
JP5985661B2 (en) 2012-02-15 2016-09-06 アップル インコーポレイテッド Scan depth engine
CN104221059B (en) 2012-03-22 2017-05-10 苹果公司 Diffraction-based sensing of mirror position
DE102012103161A1 (en) * 2012-04-12 2013-10-17 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor device
JP2013222499A (en) * 2012-04-12 2013-10-28 Sharp Corp Light source substrate unit
US8877561B2 (en) 2012-06-07 2014-11-04 Cooledge Lighting Inc. Methods of fabricating wafer-level flip chip device packages
US9064773B2 (en) * 2012-10-26 2015-06-23 Lg Innotek Co., Ltd. Light emitting device package
WO2014203110A1 (en) 2013-06-19 2014-12-24 Primesense Ltd. Integrated structured-light projector
US9230486B2 (en) * 2013-10-10 2016-01-05 Google Technology Holdings LLC Method and apparatus for displaying content on a display of an electronic device during different device operating modes
US9528906B1 (en) 2013-12-19 2016-12-27 Apple Inc. Monitoring DOE performance using total internal reflection
US9823725B2 (en) 2014-08-11 2017-11-21 Google Technology Holdings LLC Method and apparatus for adjusting a sleep mode display mechanism of an electronic device
WO2016192452A1 (en) * 2015-05-29 2016-12-08 广州市鸿利光电股份有限公司 Encapsulation method of csp led and csp led
US10012831B2 (en) 2015-08-03 2018-07-03 Apple Inc. Optical monitoring of scan parameters
US10073004B2 (en) 2016-09-19 2018-09-11 Apple Inc. DOE defect monitoring utilizing total internal reflection
US10153614B1 (en) 2017-08-31 2018-12-11 Apple Inc. Creating arbitrary patterns on a 2-D uniform grid VCSEL array
EP3544066A1 (en) * 2018-03-23 2019-09-25 Excellence Opto. Inc. High heat dissipation light emitting diode package structure having at least two light cups and lateral light emission
JPS5418692A (en) * 1977-07-13 1979-02-10 Nippon Telegr & Teleph Corp <Ntt> Light emitting device with reflector
JPH01283883A (en) * 1988-05-10 1989-11-15 Matsushita Electric Ind Co Ltd Light emitting diode and forming method for its electrode
JPH0463661U (en) * 1990-10-12 1992-05-29
JPH0529659A (en) * 1991-07-23 1993-02-05 Sharp Corp Side liminous type led lamp and manufacture thereof
JP2001308443A (en) * 2000-04-26 2001-11-02 Hitachi Ltd Sub-mount
JP2002033410A (en) * 2000-05-11 2002-01-31 Mitsutoyo Corp Function device unit and its manufacturing method
JP2002267893A (en) * 2001-03-13 2002-09-18 Seiko Epson Corp Optical module, method for manufacturing the same, and optical transmitter
JP2003229603A (en) * 2002-01-31 2003-08-15 Citizen Electronics Co Ltd Double-sided emitting led package
DE19638667C2 (en) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mixed-color light-emitting semiconductor component having luminescence
US6531328B1 (en) * 2001-10-11 2003-03-11 Solidlite Corporation Packaging of light-emitting diode
JP2004095482A (en) * 2002-09-03 2004-03-25 Chi Mei Electronics Corp Image display device
2005-02-23 DE DE102005008339A patent/DE102005008339A1/en not_active Ceased
JP4710713B2 (en) * 2006-05-17 2011-06-29 市光工業株式会社 Light emitting diode fixing structure
KR101378406B1 (en) 2006-07-27 2014-03-27 스탠리 일렉트릭 컴퍼니, 리미티드 Silicon led package having horn and contact edge with (111) planes
US7851817B2 (en) 2006-07-27 2010-12-14 Stanley Electric Co., Ltd. Silicon LED package having horn and contact edge with (111) planes
US8039848B2 (en) 2006-08-21 2011-10-18 Cree, Inc. Semiconductor light emitting device substrate strips and packaged semiconductor light emitting devices
JPWO2011037185A1 (en) * 2009-09-24 2013-02-21 京セラ株式会社 Mounting substrate, light emitter, and manufacturing method of mounting substrate
TWI470765B (en) * 2010-04-15 2015-01-21 Liquid Design Systems Inc Led lighting apparatus
JP2018137471A (en) * 2010-06-01 2018-08-30 エルジー イノテック カンパニー リミテッド Light emitting element package
JP4990355B2 (en) 2012-08-01 Semiconductor light emitting device package submount and semiconductor light emitting device package including the submount
US9818922B2 (en) 2017-11-14 Light emitting diode package having frame with bottom surface having two surfaces different in height
EP1768193B1 (en) 2015-07-29 Light emitting diode
JP4945106B2 (en) 2012-06-06 Semiconductor light emitting device
JP5698496B2 (en) 2015-04-08 Light emitting chip, LED package, backlight for liquid crystal display, liquid crystal display and illumination
US7976186B2 (en) 2011-07-12 Power surface mount light emitting die package
JP5104490B2 (en) 2012-12-19 Light emitting device and manufacturing method thereof
US6995510B2 (en) 2006-02-07 Light-emitting unit and method for producing same as well as lead frame used for producing light-emitting unit
JP6073428B2 (en) 2017-02-01 Optoelectronic semiconductor component manufacturing method and optoelectronic semiconductor component
EP2475006B1 (en) 2015-09-30 Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same
US8030762B2 (en) 2011-10-04 Light emitting diode package having anodized insulation layer and fabrication method therefor
JP5520241B2 (en) 2014-06-11 Power surface mounted light emitting die package
JP4254266B2 (en) 2009-04-15 Light emitting device and light emitting device manufacturing method
EP1612867B1 (en) 2009-04-29 Semiconductor Package and Method for Manufacturing the same
JP4870572B2 (en) 2012-02-08 Semiconductor light emitting device and submount, and method for forming the same
TWI316747B (en) 2009-11-01 Surface mountable optoelectronic component and its production method
US7816156B2 (en) 2010-10-19 Light emitting diode package and fabrication method thereof
EP1162669A2 (en) 2001-12-12 Light irradiating device, manufacturing method thereof, and lighting apparatus using the light irradiating device
US7696527B2 (en) 2010-04-13 Light source, manufacturing method of light source, lighting apparatus, and display apparatus
US6534330B2 (en) 2003-03-18 Light irradiating device manufacturing method
CN100511732C (en) 2009-07-08 Light emitting device
US7279723B2 (en) 2007-10-09 LED lamp
US8049237B2 (en) 2011-11-01 Light emitting device
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