text:
"Rose Room", also known as "In Sunny Roseland", is a 1917 jazz standard, music by Art Hickman, lyrics by Harry Williams. It is almost always performed as an instrumental. Composed at a time when the popularity of ragtime was fading in favor of thirty-two-bar form and twelve-bar blues songs, the song has been called "definitely ahead of its time" by composer Alec Wilder. Indeed, while popular in the late 1910s and early 1920s, the song enjoyed its biggest popularity during the swing era. The song was named after the Rose Room in St. Francis Hotel, where Hickman was playing at the time.  In 1914, jazz pioneer Bert Kelly was a member of Hickman's band.

Duke Ellington is credited in reviving the popularity of "Rose Room" with his 1932 recording. Ellington later used the song's chord progression in his 1939 composition, "In a Mellow Tone". "Rose Room" is also the song with which Charlie Christian impressed Benny Goodman in 1939, jamming it solo after solo for 45 minutes with Goodman's band.

Modern Swing Group, Leader: John Kongshaug recorded a version in Oslo on December 6, 1954. It was released on the 78 rpm record His Master's Voice A.L. 3489.

Bandleader Phil Harris used "Rose Room" as his theme song while performing in San Francisco. He also used "Rose Room" again as a second theme on his NBC radio series, The Phil Harris-Alice Faye Show. The Lawrence Welk Orchestra/Show made a rendition with "Peanuts" Hucko on clarinet, in a show paying tribute to roses.

The tune plays over the closing credits of "Away with the Fairies" (2012), an episode from the first season of Miss Fisher's Murder Mysteries.

See also
List of pre-1920 jazz standards

Notes

1917 songs
1910s jazz standards
Jazz songs
Songs with lyrics by Harry Williams (songwriter)

redpajama_set_name: RedPajamaWikipedia


A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is formed on a substrate having an insulating surface and a laser beam having a wavelength longer than 350 nm is irradiated to the non-single crystal semiconductor film, thus crystallizing the non-single crystal silicon film. The non-single crystal semiconductor film has a film thickness distribution within the surface of the substrate, and a differential coefficient of a laser beam absorptivity with respect to the film thickness of the non-single crystal semiconductor film is positive.
The present invention relates to a method of irradiating a laser beam, and in particular, to a method of irradiating a laser beam that is used in forming an active layer of a thin film transistor or the like.
Techniques of crystallizing a semiconductor film formed on an insulating substrate such as glass and techniques of increasing crystallinity thereof by using laser annealing have been researched widely in recent years. As a material for the semiconductor film, silicon (Si) is used in many cases. A technique of crystallizing a semiconductor film by using a laser beam, thus obtaining a crystalline semiconductor film, and a method of irradiating a laser beam to a semiconductor film, thus increasing crystallinity, are referred to as "laser crystallization" within this specification. Further, films that undergo laser irradiation during laser crystallization are referred to as "irradiation films".
Compared to synthetic quartz glass substrates, which are often used conventionally, glass substrates have the advantages of low cost, good workability, and the ease with which large area substrates can be made. This is the reason that the aforementioned research is being carried out. Further, the reason that lasers are preferably used in crystallization is that the glass substrate melting point is low, and it is necessary to reduce the processing temperature to a temperature equal to or less than 600° C. Lasers can impart high energy only to a semiconductor film without causing the substrate temperature to increase very much. Further, a throughput is considerably high compared to a heating means that uses an electric heating furnace.
Crystalline semiconductor films formed by laser beam irradiation have high mobility, and therefore thin film transistors (TFTs) are formed using the crystalline semiconductor films. For example, the crystalline semiconductor films are utilized in an active matrix liquid crystal display device, or the like, in which TFTs used in a pixel portion, or TFTs used in the pixel portion and a driver circuit, are formed on one glass substrate.
A method of using a pulse oscillation laser (pulse laser) and a method of using a continuous wave laser (CW laser) exist as laser light sources used in laser crystallization. Excimer lasers such as XeCl lasers, and higher harmonics of solid lasers such as Nd:YAG lasers, Nd:YVO4 lasers, and Nd:YLF lasers may be used as laser light sources for the former method, and gas lasers such as Ar lasers, and higher harmonics of solid CW lasers such as Nd:YAG lasers and Nd:YVO4 lasers may be used as laser light sources for the latter method.
Amorphous silicon films (a-Si) and polysilicon films (poly-Si) are semiconductor films that can undergo laser crystallization, and the crystallinity of these non-single crystal semiconductor films is increased by performing laser crystallization.
However, if an a-Si film is formed by plasma CVD on a large area substrate, there is a problem in that the film thickness of the formed a-Si film varies according to location within the substrate surface due to the plasma distribution during film formation, the reaction gas outflow distribution, the temperature distribution of heated substrate, and the like, and a film thickness distribution thus develops. Further, if a poly-Si film is formed from a-Si, film thickness variations that occur during film formation of the a-Si film still remain.
For example, if an a-Si film is formed on a 600 mm×720 mm glass substrate by using plasma CVD, variations of ±5% of the a-Si film thickness develop within the substrate surface.
If a state exists in which the film thickness of the non-single crystal semiconductor film has dispersions depending on locations within the substrate surface, the energy necessary for crystallization in locations at which the film thickness has increased becomes relatively larger, and the energy necessary for crystallization in locations at which the film thickness has decreased becomes relatively smaller.
It is extremely difficult to control laser beam energy by the size of the film in thickness, and therefore only a fixed energy can be imparted to the irradiation film if laser crystallization is performed by using, for example, a pulse laser such as an excimer laser. The degree of crystallization thus differs depending on location within the substrate surface, and the grain size of the polycrystalline semiconductor film obtained becomes non-uniform in locations within the substrate surface. A problem therefore exists in that variations develop in the characteristics of TFTs formed on a large area substrate.
On the other hand, solid pulse lasers and solid CW lasers using solid laser media (hereinafter both are referred to together as solid lasers) are maintenance-free, have stable output, and are superior to excimer lasers in mass production because it is possible to have higher repetitive oscillation when using a solid laser as a pulse laser than when using an excimer laser.
A technique of laser crystallization for forming a polycrystalline silicon film having a large grain size of several tens of micrometers on a glass substrate by using a CW Nd:YVO4 laser with LD excitation has been developed recently. It is possible to manufacture TFTs having electron mobility equal to or greater than 600 cm2/Vs by using this technique. Forming an LSI containing a CPU on a glass substrate, to produce a "sheet computer", is moving closer and closer to realization.
However, there are not many types of solid lasers at present, and almost all available solid lasers have an oscillation wavelength (fundamental wave) in the red color region or the infrared region. Semiconductor films absorb almost no light in the red color region or the infrared region, and therefore the second harmonic (2ω), the third harmonic (3ω), or a higher harmonic corresponding to a wavelength in the range of the visible light region to the ultraviolet light region is used when a solid laser is utilized during laser crystallization. However, the energy conversion efficiency with respect to the fundamental wave is highest with the second harmonic, and therefore it is advantageous from the perspective of an energy to use the second harmonic.
The wavelength of the second harmonic of a solid laser is mainly in the visible light region on the long wavelength side greater than 350 nm. The wavelengths of the second harmonic of typical solid lasers are shown as follows: Nd:YAG laser: 532 nm; Nd:YVO4 laser: 532 nm; Nd:YLF laser: 527 nm (or 524 nm); Ti:sapphire laser: 345 to 550 nm (variable wavelength); and Alexandrite laser: 350 to 410 nm (variable wavelength).
The skin depth to the semiconductor film is deep when using the second harmonic of a solid laser for laser crystallization compared to an excimer laser beam or the like having a wavelength in the ultraviolet light region, and therefore repetitive reflection develops within the semiconductor thin film, and there is interference between the reflected beam and the incident beam. The optical characteristics of the laser beam with respect to the irradiation film (reflectivity, transmissivity, and absorptivity) periodically fluctuate due to the film thickness of the semiconductor film due to the effect of the interference.
Refer to FIGS. 1A and 1B. FIG. 1A is a diagram showing absorption spectra of a-Si films formed on a glass substrate. Reference numeral 101 denotes an adsorption spectrum when the a-Si film thickness is 30 nm, reference numeral 102 denotes an adsorption spectrum when the a-Si film thickness is 50 nm, reference numeral 103 denotes an adsorption spectrum when the a-Si film thickness is 70 nm, reference numeral 104 denotes an adsorption spectrum when the a-Si film thickness is 90 nm, and reference numeral 105 denotes an adsorption spectrum when the a-Si film thickness is 110 nm. Further, FIG. 1B is a diagram showing absorption spectra of poly-Si films formed on a glass substrate. Reference numeral 111 denotes an adsorption spectrum when the poly-Si film thickness is 30 nm, reference numeral 112 denotes an adsorption spectrum when the poly-Si film thickness is 50 nm, reference numeral 113 denotes an adsorption spectrum when the poly-Si film thickness is 70 nm, reference numeral 114 denotes an adsorption spectrum when the poly-Si film thickness is 90 nm, and reference numeral 115 denotes an adsorption spectrum when the poly-Si film thickness is 110 nm.
It can be seen that the light absorption spectra are dependent upon the irradiation film thickness in the visible light region, on the long wavelength side greater than 350 nm. If laser crystallization is performed using a laser beam that possesses a wavelength in this wavelength region, then the energy imparted to the semiconductor film varies due to the film thickness of the semiconductor film itself, even if the laser beam energy is fixed.
Refer to FIGS. 2A and 2B. FIG. 2A is a diagram showing a film thickness dependence for light absorptivity by an a-Si film at a wavelength of 308 nm (reference numeral 201), and a film thickness dependence for light absorptivity by an a-Si film at a wavelength of 532 nm (reference numeral 202). FIG. 2B is a diagram showing a film thickness dependence for light absorptivity by a poly-Si film at a wavelength of 308 nm (reference numeral 211), and a film thickness dependence for light absorptivity by a poly-Si film at a wavelength of 532 nm (reference numeral 212).
As can be understood from FIGS. 2A and 2B, the skin depth to the semiconductor film is shallow in laser crystallization methods that use excimer lasers, such as an XeCl laser, because the laser beam wavelength is in the ultraviolet light region. Therefore there is no dependence of the light absorptivity on the irradiation film thickness, and there are no fluctuations of the energy imparted to the semiconductor film by laser irradiation due to the film thickness of the semiconductor film itself. On the other hand, if the film thickness of the a-Si film or the like fluctuates in laser crystallization methods that use the second harmonic of a solid laser, then the light absorptivity corresponding to the fluctuations is attenuated periodically and exponentially, and the energy imparted to the semiconductor film also fluctuates in a similar manner. It is therefore difficult to achieve uniform crystallization.
Laser crystallization methods that use the second harmonic of a conventional solid laser have been found to have more disadvantages in this point than laser crystallization methods that use an excimer laser beam.
The inventors of the present invention noticed that the dependence of the light absorptivity on the film thickness that can be seen for the second harmonic of a solid laser is rather effective against the problem of variations in crystallinity within the substrate surface caused by variations in the film thickness of the irradiation film within the substrate surface. In other words, by limiting the film thickness of the irradiation film, the energy absorbed becomes relatively larger at locations within the substrate surface when the film thickness of the irradiation film increases, and the energy absorbed becomes relatively smaller at locations within the substrate surface when the film thickness of the irradiation film decreases in laser crystallization using the second harmonic of a solid laser, and it is considered that crystallization can proceed to the same degree. It is thus expected that variations in the TFT characteristics within the substrate surface can be reduced.
An object of the present invention is to provide a laser beam irradiation method, and a method of manufacturing a thin film transistor, which are capable of reducing non-uniformity in the degree of crystallization of a polycrystalline semiconductor film formed by using laser crystallization, and reducing variations in TFT characteristics, caused by variations in the film thickness of a non-single crystal semiconductor film within a surface of a large area substrate having an insulating surface when manufacturing the TFTs on the substrate.
After conducting extensive studies on how to resolve the aforementioned problem, and also considering experimental results, the inventors of the present invention have finally completed this invention. In order to solve the aforementioned problem, a non-single crystal semiconductor film, formed having a specific target film thickness, undergoes laser crystallization using a laser beam having a long wavelength greater than 350 nm in the method of manufacturing a semiconductor device of the present invention.
a differential coefficient of an absorptivity of the laser beam with respect to the film thickness of the non-single crystal semiconductor film is positive.
the film thickness of the non-single crystal semiconductor film during irradiation of the laser beam is determined by a refractive index of the wavelength of the laser beam.
a center film thickness of the non-single crystal semiconductor film in the laser beam irradiation is determined by a refractive index of the wavelength of the laser beam.
FIGS. 4A and 4B show: an absorptivity, A(t), of light (532 nm) in a poly-Si film found by computer simulation performed based on an index of refractive index (n) and an extinction constant (k), obtained from an ellipsometer; a derivative dA(t)/dt of the light absorptivity A(t); and actual measured values of the absorptivity of light having a wavelength of 532 nm when the poly-Si film thickness is changed.
A laser crystallization method is discussed in which the film thickness of an irradiation film is set before laser crystallization so that variations in the degree of crystallization within a substrate surface after performing laser crystallization are reduced for cases of performing laser crystallization over the entire substrate surface by using the second harmonic (532 nm) of a CW Nd:YVO4 laser to crystallize an amorphous silicon (a-Si) film formed on a glass substrate having an insulating film. Variations in the film thickness of the a-Si film depending on locations within the substrate surface, and a dependence on the a-Si film thickness of the absorptivity of 532 nm light, are investigated in advance, before film formation processing of the a-Si film.
The irradiation film is taken as an a-Si film formed by plasma chemical vapor deposition (CVD). Further, the absorptivity of 532 nm light by an a-Si film substrate is taken as A(t) in this embodiment mode, where the a-Si film thickness is t.
First, variations in film thickness of the a-Si film formed by plasma CVD are investigated, along with the dependence of 532 nm light absorptivity on the a-Si film thickness.
An a-Si film may be formed on a dummy substrate having the same size as the actual substrate, for example, in investigating the variations in the film thickness of the a-Si film, and the film thickness within substrate surface of the dummy substrate may be measured at several points by using a spectral ellipsometer.
Film thickness variations of approximately ±5% develop within the substrate surface when an a-Si film is formed on a 600 mm×720 mm substrate by using plasma CVD, for example. Thus, if the target film thickness when forming the a-Si film is taken as t, film thickness variations develop within the substrate surface with a maximum film thickness equal to 1.05t, and a minimum film thickness equal to 0.95t.
In order to investigate the a-Si film thickness dependence on the absorptivity of 532 nm light, actual measurements of the absorption spectrum may be made by using a spectral photometer, for example, on substrates on which an a-Si film is formed in advance, and the film thickness of the a-Si film is to be clarified. Data showing the dependence of 532 nm light absorptivity upon a-Si film thickness can be obtained, provided that absorption spectrum measurements are made under several a-Si film thickness conditions.
Alternatively, the index of refraction of an a-Si film at 532 nm may be found by using a spectral ellipsometer or the like, and the light absorptivity A(t) may be found by running a computer simulation. Computer simulations are useful in finding a continuous light absorptivity dependence on the film thickness, without requiring a lot of effort.
Refer here to FIGS. 3A and 3B. Reference numeral 301 in FIG. 3A shows the 532 nm light absorptivity A(t) found by a computer simulation performed based on an index of refractive index (n) and an extinction constant (k) obtained from a spectral ellipsometer. Reference numeral 302 denotes a derivative dA(t)/dt of the light absorptivity A(t) denoted by 301, and reference numeral 303 denotes actual measured values of the 532 nm light absorptivity taken while varying the a-Si film thickness. Note that, for convenience of computation, the difference among the variations in the light absorptivity with respect to the film thickness may be found as a substitute for the derivative of the light absorptivity A(t).
By comparing the actual measured values 303 with the simulation 301, it can be seen that, although there is a small difference with the values of the derivative of the light absorptivity A(t), the values of the a-Si film thickness that denote the maximum value and the minimum value of the 532 nm light absorptivity have relatively good agreement.
If the derivative of the light absorptivity is found from the simulation results of the light absorptivity at 532 nm by the a-Si film, and a-Si film thickness ranges in which dA(t)/dt>0 are selected, then a range from 28 nm to 58 nm, a range from 86 nm to 115 nm, a range from 144 nm to 173 nm, and the like are found. Variations in the degree of crystallization due to film thickness variations can be reduced in a self-alignment manner, provided that the film thickness of the a-Si film is within these ranges. This can be clearly understood by referring to FIG. 3B in which the graph of a region from 20 nm to 90 nm of FIG. 3A is blown up.
The a-Si film formed on the glass substrate at a target film thickness of t possesses film thickness variations within the substrate surface, with the maximum film thickness equal to 1.05t and the minimum film thickness equal to 0.95t. Therefore the film thickness t may be selected so that dA(t)/dt>0 is always true, even if the film thickness fluctuates from 0.95t to 1.05t, in order to reduce variations in the degree of crystallization, due to film thickness variations over the entire substrate surface, in a self-alignment manner.
Further, dA(t)/dt>0 expresses mathematically a state in which A(t) increases monotonically from the minimum value to the maximum value. The periodicity of the values of t showing maximum values and minimum values of A(t) may therefore be found in order to obtain a range for t at which variations in the degree of crystallization due to film thickness variations are reduced in a self-alignment manner. A method therefor is explained below.
A light intensity distribution I(z) in a depth direction (z direction) of the semiconductor film for cases in which the semiconductor film is irradiated by laser light follows Lanbert's Law, expressed by I(z)=I(0)·(1−R)·exp(−αz), where I(0) denotes irradiation light intensity, R denotes light reflectivity, and α denotes a light absorptivity coefficient.
The light absorptivity of a semiconductor film with respect to laser light having a longer wavelength than 350 nm is attenuated periodically and exponentially in accordance with film thickness. The (1−R) term within respective I(z) terms described above contributes to periodic fluctuations, and the exp(−αz) term contributes to exponential attenuation. Periodic fluctuation in the light reflectivity R becomes a cause of periodic fluctuations in A(t) as shown directly in FIGS. 2A and 2B, FIGS. 3A and 3B, and FIGS. 4A and 4B, and the a-Si film thickness showing maximum and minimum values of light absorptivity can easily be found by computing the minimum and maximum values of reflectivity.
If the reflectivity R(t) is considered for a case in which light is made incident from a medium 0 (index of refraction n0) on a parallel plane film (corresponding to the semiconductor film, film thickness t, index of refraction n1) on a substrate (index of refraction n2), then values of t at which R(t) is a maximum value or a minimum value are determined by the magnitude of relationship between n0, n1, and n2.
If laser wavelength is expressed by λ, and m is taken as a natural number, then for a case (A) in which n2>n1>n0, or n2<n1<n0, there is no phase shift at the two film interfaces, and therefore an increasing reflectivity condition exists. R(t) takes on a minimum value when n1×t=(2m+1)×λ/4, and takes on a maximum value when n1×t=2m×λ/4. For a case (B) in which n2>n1<n0, or n2<n1>n0, there is a phase shift at the two film interfaces. R(t) therefore takes on opposite values: a maximum value when n1×t=(2m+1)×λ/4, and a minimum value when n1×t=2m×λ/4.
The relationship between the indexes of refraction n2, n1, and n0 normally satisfies the case (B) above for semiconductor films formed on glass substrates. For example, in the case of a single layer a-Si film, the index of refraction n2 of the glass substrate in the visible light region (300 nm to 800 nm) is approximately 1.5, and the index of refraction n1 of the a-Si film is equal to or greater than 3.5 at a wavelength region equal to or greater than 350 nm. A single layer film is used, and therefore n0=1 (air).
It can thus be seen from the above method that the ranges of the target film thickness of an a-Si film capable of reducing variations in the degree of crystallization, due to variations in the film thickness over the entire substrate surface are from 29.5 nm to 55.2 nm, from 90.5 nm to 109.5 nm, from 151.6 nm to 164.8 nm, and the like. Variations in the degree of crystallization caused by variations in the film thickness within the substrate surface can be reduced provided that laser crystallization of the entire substrate surface is performed by using the second harmonic (532 nm) of a CW Nd:YVO4 laser with the film thickness of the a-Si film set to one of the above ranges for the laser irradiation process.
Once the set film thickness of the a-Si film is determined, the a-Si film may then be formed with the determined film thickness on the glass substrate if laser crystallization of the a-Si film substrate is to be performed by using the second harmonic (532 nm) of a CW Nd:YVO4 laser.
Further, even if the set film thickness is not achieved during formation of the a-Si film, additional film formation or film reduction by etching may be conducted to achieve the set film thickness for the laser irradiation process.
For cases in which crystallization over the entire substrate surface is not necessary, and for cases in which it is not necessary to reduce variations in the degree of crystallization over the entire substrate surface, the range to which the film thickness is measured may be limited to portions of the substrate where it is desired to reduce variations in the degree of crystallization.
A method of manufacturing a TFF in which variation in the TFT characteristics within the surface of a substrate are reduced is discussed as Embodiment 1. For cases in which a continuous grain silicon (poly-Si) film, formed on a glass substrate having an insulating film, is crystallized over the entire surface of the substrate by using the second harmonic (532 nm) of a pulse Nd:YAG laser, variations in the film thickness of the poly-Si film depending on locations within the substrate surface, and the poly-Si film thickness dependence of the absorptivity of 532 nm light are investigated in advance, before laser crystallization processing. The film thickness of the irradiation film is set so that variations in the degree of crystallization within the substrate surface after performing laser crystallization therein are reduced and thereafter, laser, crystallization is performed.
In Embodiment 1, the irradiation film is taken as poly-Si film obtained by solid phase crystallization (SPC) of a-Si film formed by plasma chemical vapor deposition (CVD). Further, the absorptivity of 532 nm light by the poly-Si film substrate is taken as A(t) within Embodiment 1, where t is denotes the poly-Si film thickness.
Variations in the film thickness of the poly-Si film, and the dependence of the absorptivity of 532 nm light on the poly-Si film thickness are investigated before forming the a-Si film. Film formation of an a-Si film on a dummy substrate having the same size as the actual substrate may be performed, for example, and the film thickness may be measured at many points within the surface of the dummy substrate by using an ellipsometer in order to investigate film thickness variations. Although an SPC method is used in making the a-Si film into a poly-Si film, the film thickness does not vary during phase changes from the a-Si film to the poly-Si film, and therefore the film thickness data measured at many points within the substrate surface may also be treated as poly-Si film data. A substrate on which a poly-Si film is formed, and the film thickness of the poly-Si film is already known, may be used to make actual absorptivity measurements by using a spectrophotometer, for example, in order to investigate the dependence of the absorptivity of 532 nm light on the poly-Si film thickness. Alternatively, the film thickness of the poly-Si film and its index of refraction may be measured by using an ellipsometer, and the light absorptivity A(t) may be simulated. The latter method does not entail much trouble, and is useful in understanding how the light absorptivity continuously depends on the film thickness.
The film thickness distribution of the poly-Si film within the surface of the substrate becomes ±5%, similar to the variations in film thickness of the a-Si film within the surface of the substrate discussed in the Embodiment Mode. It can thus be seen that there will be variations in film thickness within the substrate surface of a maximum film thickness equal to 1.05t, and a minimum film thickness equal to 0.95t, if the target film thickness for poly-Si film formation is taken as t.
Refer to FIGS. 4A and 4B. In FIG. 4A, reference numeral 401 denotes a light absorptivity A(t) at 532 nm found by a computer simulation performed based on an index of refractive index (n) and an extinction constant (k) obtained from an ellipsometer. Reference numeral 402 denotes a derivative dA(t)/dt of the light absorptivity A(t), and reference numeral 403 denotes actual measured values of light absorptivity at 532 nm when varying the poly-Si film thickness. Note that, for convenience of computation, the difference between the variations in the light absorptivity with respect to the film thickness may be found as a substitute for the derivative of the light absorptivity A(t).
By comparing the actual measured values 403 with the simulation 401, it can be seen that, although there is a small difference with the light absorptivity itself, the values of the poly-Si film thickness at which light absorptivity at 532 nm takes the maximum value and the minimum value have relatively good agreement. However, the values found here do not agree with the values of the a-Si film thickness, discussed in Embodiment 1, at which light absorptivity at 532 nm takes the maximum and minimum values.
If the derivative dA(t)/dt of the light absorptivity is found from the simulation results of the light absorptivity at 532 nm by the a-Si film, and poly-Si film thickness ranges in which dA(t)/dt>0 are selected, then a range from 1 nm to 9 nm, a range from 33 nm to 63 nm, a range from 91 nm to 123 nm, a range from 155 nm to 185 nm, and the like are found. Variations in the degree of crystallization due to film thickness variations can be reduced in a self-alignment manner, provided that the film thickness of the poly-Si film is within these ranges. This can be clearly understood by referring to FIG. 4B in which the graph of a 20 nm to 90 nm region of FIG. 4A is blown up.
The poly-Si film formed on the glass substrate at a target film thickness of t possesses film thickness variations within the substrate surface, with the maximum film thickness equal to 1.05t and the minimum film thickness equal to 0.95t. Therefore the film thickness t may be selected so that dA(t)/dt>0 is always achieved, even if the film thickness fluctuates from 0.95t to 1.05t, in order to reduce variations in the degree of crystallization, due to film thickness variations over the entire substrate surface, in a self-alignment manner.
It can thus be seen from the above method that the target film thickness of a poly-Si film capable of reducing variations in the degree of crystallization, due to dispersions in the film thickness over the entire substrate surface in a self-alignment manner, is from 1.1 nm to 8.6 nm, from 31.4 nm to 60.0 nm, from 95.8 nm to 117.1 nm, from 163.2 nm to 176.2 nm, and the like. Variations in the degree of crystallization caused by dispersions in the film thickness within the substrate surface can be reduced provided that laser crystallization of the entire substrate surface is performed by using the second harmonic (532 nm) of a CW Nd:YVO4 laser with the film thickness of the poly-Si film set to one of the above ranges for the laser irradiation process.
Once the set film thickness of the poly-Si film is determined, the poly-Si film may then be formed at the determined film thickness on the glass substrate if laser crystallization of the poly-Si film substrate is to be performed by using the second harmonic (532 nm) of a CW Nd:YVO4 laser.
For cases in which crystallization over the entire substrate surface is not necessary, and for cases in which it is not necessary to reduce variations in the degree of crystallization over the entire substrate surface, the range of the poly-Si film to which the film thickness is measured may also be limited to portions of the substrate where it is desired to reduce variations in the degree of crystallization.
Variations in the degree of crystallization during laser crystallization can be reduced by the laser beam irradiation method of the present invention, even for cases in which there are film thickness variations within the surface of a non-single crystal semiconductor.
wherein a differential coefficient of an absorptivity of the laser beam with respect to a film thickness of the non-single crystal semiconductor film is positive.
2. A laser beam irradiation method according to claim 1, wherein the laser beam is a pulse oscillation laser beam.
3. A laser beam irradiation method according to claim 2, wherein the pulse oscillation laser beam comprises a high harmonic of a solid pulse laser.
4. A laser beam irradiation method according to claim 3, wherein the laser beam comprising the high harmonic of the solid pulse laser is one selected from the group consisting of an Nd:YAG laser beam, an Nd:YVO4 laser beam, and an Nd:YLF laser beam.
5. A laser beam irradiation method according to claim 1, wherein the laser beam is a continuous wave laser beam.
6. A laser beam irradiation method according to claim 5, wherein the continuous wave laser beam is an Ar laser beam.
7. A laser beam irradiation method according to claim 5, wherein the continuous wave laser beam comprises a high harmonic of a solid continuous wave laser.
8. A laser beam irradiation method according to claim 7, wherein the laser beam comprising the high harmonic of the solid continuous wave laser is one selected from the group consisting of an Nd:YAG laser and an Nd:YVO4 laser.
wherein the film thickness of the non-single crystal semiconductor film is determined by a refractive index of the wavelength of the laser beam.
10. A laser beam irradiation method according to claim 9, wherein the laser beam is a pulse oscillation laser beam.
11. A laser beam irradiation method according to claim 10, wherein the pulse oscillation laser beam comprises a high harmonic of a solid pulse laser.
12. A laser beam irradiation method according to claim 11, wherein the laser beam comprising the high harmonic of the solid pulse laser is one selected from the group consisting of an Nd:YAG laser beam, an Nd:YVO4 laser beam, and an Nd:YLF laser beam.
13. A laser beam irradiation method according to claim 9, wherein the laser beam is a continuous wave laser beam.
14. A laser beam irradiation method according to claim 13, wherein the continuous wave laser beam is an Ar laser beam.
15. A laser beam irradiation method according to claim 13, wherein the continuous wave laser beam comprises a high harmonic of a solid continuous wave laser.
16. A laser beam irradiation method according to claim 15, wherein the laser beam comprising the high harmonic of the solid continuous wave laser is one selected from the group consisting of an Nd:YAG laser and an Nd:YVO4 laser.
18. A method of manufacturing a thin film transistor according to claim 17, wherein the laser beam is a pulse oscillation laser beam.
19. A method of manufacturing a thin film transistor according to claim 18, wherein the pulse oscillation laser beam comprises a high harmonic of a solid pulse laser.
20. A method of manufacturing a thin film transistor according to claim 19, wherein the laser beam comprising the high harmonic of the solid pulse laser is one selected from the group consisting of an Nd:YAG laser beam, an Nd:YVO4 laser beam, and an Nd:YLF laser beam.
21. A method of manufacturing a thin film transistor according to claim 17, wherein the laser beam is a continuous wave laser beam.
22. A method of manufacturing a thin film transistor according to claim 21, wherein the continuous wave laser beam is an Ar laser beam.
23. A method of manufacturing a thin film transistor according to claim 21, wherein the continuous wave laser beam comprises a high harmonic of a solid continuous wave laser.
24. A method of manufacturing a thin film transistor according to claim 23, wherein the laser beam comprising the high harmonic of the solid continuous wave laser is one selected from the group consisting of an Nd:YAG laser and an Nd:YVO4 laser.
26. A method of manufacturing a thin film transistor according to claim 25, wherein the laser beam is a pulse oscillation laser beam.
27. A method of manufacturing a thin film transistor according to claim 26, wherein the pulse oscillation laser beam comprises a high harmonic of a solid pulse laser.
28. A method of manufacturing a thin film transistor according to claim 27, wherein the laser beam comprising the high harmonic of the solid pulse laser is one selected from the group consisting of an Nd:YAG laser beam, an Nd:YVO4 laser beam, and an Nd:YLF laser beam.
29. A method of manufacturing a thin film transistor according to claim 25, wherein the laser beam is a continuous wave laser beam.
30. A method of manufacturing a thin film transistor according to claim 29, wherein the continuous wave laser beam is an Ar laser beam.
31. A method of manufacturing a thin film transistor according to claim 29, wherein the continuous wave laser beam comprises a high harmonic of a solid continuous wave laser.
32. A method of manufacturing a thin film transistor according to claim 31, wherein the laser beam comprising the high harmonic of the solid continuous wave laser is one selected from the group consisting of an Nd:YAG laser and an Nd:YVO4 laser.
33. A laser beam irradiation method according to claim 1, wherein the certain wavelength of the laser beam is 532 nm.
34. A laser beam irradiation method according to claim 1, wherein the data are obtained by a computer simulation.
35. A laser beam irradiation method according to claim 9, wherein the certain wavelength of the laser beam is 532 nm.
36. A laser beam irradiation method according to claim 9, wherein the data are obtained by a computer simulation.
37. A method of manufacturing a thin film transistor according to claim 17, wherein the certain wavelength of the laser beam is 532 nm.
38. A method of manufacturing a thin film transistor according to claim 17, wherein the data obtained by a computer simulation.
39. A method of manufacturing a thin film transistor according to claim 25, wherein the certain wavelength of the laser beam is 532 nm.
40. A method of manufacturing a thin film transistor according to claim 25, wherein the data are obtained by a computer simulation.


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la river bike path griffith park
Instead of running downhill you'll wrap around the side of the park, gently descending as you come back to your starting point.This is Vista Del Valle Drive - although there are no signs telling you so. But it is on a bicycle that the entire park really opens up for exploration. Regardless of whether you're approaching this route from the north or south, get ready to climb and then coast. Keep straight on the paved road and when you approach the "Y" where the paths diverge and begin to descend keep left. As you continue to climb you'll see visitors walking the trails to the summit of Mount Hollywood, one of the highest points in Griffith Park. Keep twisting downhill towards Travel Town and Forest Lawn Memorial Park (a big, beautiful cemetery) until you see a water tank that reads 'Travel Town'. LA River's Atwater Village-Griffith Park bridge taking shape . Located in Park Center between the Los Angeles Zoo and the Los Feliz park entrance, the Griffith Park Merry-Go-Round has been a Los Angleles family attraction for over five generations. This review is for the path that starts in Cypress Park, goes through Elysian Valley and stops in Griffith Park. There have been complaints about the exhaust fumes and a half-mile after that you'll come to a three-way stop at Riverside Drive. ABOUT US A Department of Parks was included in the City's first Freeholder Charter, adopted in 1889. Hollywood Drive to a pass that divides East Hollywood and Burbank. All trails are officially off limits to bikes. Biking Crystal Springs Drive in Griffith Park. Zoo, the Autry Museum of the American West and their respective parking lots, after which the road is now called Crystal Springs Drive. Los Angeles River. Parking: There is parking in and around Griffith Park. All rights reserved. Go right. Three-Mile Trail quickly accesses Mount Hollywood and Dante's View if you care to take a side jaunt without your bike.The next wide dirt path you'll see on your left is used frequently by hikers and equestrians (though officially closed to cyclists). Starting at Syd Kronenthal Park in east Culver City and extending seven miles until joining the Strand in Playa Del Rey, this flat bike path passes the Culver City Stairs, a popular workout spot, and the Ballona Wetlands, a space full of lush greenery and wildlife (like great blue herons and snowy egret rookeries). Down this rough, twisty road you'll coast with two hands on the brakes. »» I've ridden the LA River path and am very disappointed in it, particularly its location. At this point it is easy to connect to either of the PERIMETER rides describes below. There are wide shoulders and a pedestrian gravel path off of the road that edges the golf course. You can turn right at the divided lane four-way stop to head up a short distance on Fire Road to the Merry-Go-Round parking lot - also good place to park if you're starting on this end. If you have the pad to yourself take a moment and enjoy the big flat surface and the perfect view of Downtown L.A. After you've had your fill of the helipad continue the ride as it twists and turns to the end of Vista Del Valle at Commonwealth Canyon Drive and the Roosevelt Municipal Golf Course. T he LA River Recreation Zones are open for the 2015 summer season from May 25 (Memorial Day) to October 1.. Half of this ride is steadily climbing the closed-to-traffic Mt. View amenities, descriptions, reviews, photos, itineraries, and directions on TrailLink. But the work and nearly 900 feet of elevation (probably under the hot sun) is rewarded with panoramic views of L.A. and a close encounter with beautiful California chaparral mountain wild space. many others. A bridge across the LA River that will link Griffith Park and Glendale? The two roads join within the park, where they form a 9-mile scenic loop. While this route is not exceedingly scenic, it is interesting with its gentle twists and turns in places Take a ride along the LA Rivers adjacent bike pathway all the way from Confluence Park in DTLA to the LA Zoo in Griffith Park, Glendale. This descent is a well deserved reward and my favorite portion of this ride. If you are willing to climb some hills and break a sweat you can ride from East Hollywood/Los Feliz to Burbank/Glendale by climbing up and over Griffith Park, taking full advantage of the southern end of the Santa Monica Mountains. Bike, blader, runner and connected by wide open stretches. LEFT on the L.A. RIVER PATH Most of the routes described are on roads with bike lanes or are closed to traffic, but there are many other roads that could potentially be explored. This guide outlines rides in Griffith Park for every skill level. Location: Griffith Park, 4730 Crystal Springs Drive, Los Angeles Hours: 5:00 a.m.–10:30 p.m. Trails close at sunset. There may increased traffic during weekday commute hours on this stretch due to drivers attempting to avoid highway traffic. If you look at I from toluca lake to the la river path half way point and then the around griffith park. blog. If you want to ride further, keep going on Crystal Springs Drive all the way to Los Feliz Boulevard where you can get on the L.A. River Bike Path and loop back towards Travel Town via Riverside Drive and then Zoo Drive. Public Notice: LA River Bike Path Closure/Detour for Bridge Improvements. For the latest safety updates, click here. Picnic near Crystal Springs Drive in Griffith Park. walker traffic is steady but never congested. Alas, soon the LA River path will be closed too and it will be back to sharing roads with drivers who have started speeding and driving more erratically with less traffic on the road. from Riverside Dr. at Ventura Fwy./SR 134 (Los Angeles) to Shoreline Aquatic Park Bike Trail on Golden Shore (Long Beach). The North Atwater Bridge will be open to people on foot, bike, or horseback, and will span 325 feet between North Atwater Park and Griffith Park. Cheer up, though, it's not all bad. Couldn't this path have been placed on the Eastside of the river? The exhaust fumes coming off the freeway are horrible. Ride past the parking lots and trailheads and you'll start to see sharp corners and a steady rise in the steepness of the road. You can park Go ahead and take a photo, you know you want to. If you want a relaxing ride with kids, then riding either the bike friendly Zoo Drive/Crystal Springs Drive or the Los Angeles River Bike Path may be a great option. At the "T" keep left and then left. L. A. County- River Harbor Route: L.A./RIVER HARBOR MAP. Hollywood Drive. You may turn LEFT and ride the Los Angeles River Bike Path for several miles of easy going bike and pedestrian only pavement that hugs the L.A. River. You can ride this route going either direction, there is plenty of parking at either end. Special Considerations: Commuter traffic on weekdays - to avoid highway traffic, many drivers reroute through the park. changes. All of the rides described in this guide may be combined into a big 13-15 mile loop or may be taken individually. According to Curbed LA, the LA River Bike Path will be closed for construction come late April. It is vast, beautiful and in many places undeniably wild. It's a great ride, relatively flat and a mostly well maintained path. At the top of your climb, about halfway through the ride you will come to a "Y." The road gets rougher on the way down. runs well faster than downhill runs. Riding into the face of oncoming freeway traffic is not my idea of a good time. Despite all this construction, the river bike path remains fairly bike-able, with some detours. ... Los Angeles, CA 90012 United States (213) 202-2700. and dust from the adjacent freeways. It's free and really cool. When you're done Instagramming selfies with locomotives, ride east on Zoo Drive. Griffith Park. LEFT on the L.A. RIVER PATH You may turn LEFT and ride the Los Angeles River Bike Path for several miles of easy going bike and pedestrian only pavement that hugs the L.A. River.. Watch out for traffic, then take a left on Riverside Drive - you should immediately get onto the sidewalk and in a hundred feet you'll see the entrance to the L.A. River Bike Path. For the sake of this guide we will be describing the ride from south to north, starting in Los Feliz. I like birds and I have seen herons, egrets, red-hawk eagles, ducks, kingfishers, shore-birds, and More advanced riders will relish the challenge and fun of climbing over the mountains and casual riders will love the ease in which the lower meadows of the park can be explored. the river instead of the freeway, it is a pretty nice ride. Keep to the right and ride through the series of gates that keep cars from accessing Mt. There is plenty of parking near the entrance of the park where people can usually be found picnicking and hanging out on the grass. It's fun! The portion of path affected by the closure runs from Los Feliz Boulevard to Colorado Street. There is immediately more gravel and uneven surfaces so be careful and alert. From our free 2-Mile Kids' Ride and 15-Mile Family Ride to our 36-Mile Ride, 50-Mile Half Century, Metric Century, and Century Ride along the LA River Path – there's an adventure for everyone. The grade shifts slightly downhill and so does the quality of the road. Shortly after there is a gate that bars cars that and Mt. There are potholes, rough gravel, sharp turns and patches of washout. 19. I ride the river several times a week and routinely see ducks, cranes and blue herons. Vista Del Valle Drive hugs the sides of Mount Hollywood and the ride swoops back south. Keep left and ride through the series of gates intended to keep traffic off of Mount Hollywood Drive. The only traffic you'll encounter at this point are visitors on their way to the Observatory. Choose from five fully-supported cycling routes, ranging from 2 to 100 miles, and explore the LA River from Griffith Park to Long Beach. Highland Park Bike Route: HARBOR PARK TRAIL MAP. Hollywood Drive meet Griffith Park Drive. A project to build a pedestrian and bike path along a 12-mile portion of the Los Angeles River will be designed by a team led by Gruen Associates. Most of this route is closed to traffic though you may see the occasional park utility truck or ranger vehicle. The road now runs directly through the Wilson and Harding Golf Course so be on the look out for golf carts crossing your path! DIRECTIONS TO THE START Park your car near the Bette Davis Picnic Area on the outskirts of Griffith Park, and after crossing the river on Riverside Drive, take the bike path east along the LA River. It will descend to the left just before you get to a "Y" in the paved road. on Victory near the entrance to the path or at the little The LA River Bike Path paves the way to this Oz! The bike path along the Los Angeles River begins in Griffith park at Riverside Drive in Burbank, and there is an on-and-off opening near the Autry National Center. Check the schedule during the busy summer season. 2 … (perhaps not) There is already a parallel route through Griffith Park that is much more enjoyable and far less auto traffic and exhaust fumes. It is home to the world-famous Griffith Observatory (one of L.A.'s best free-to-the-public attractions), 70+ miles of hiking trails, several mountain peaks, three golf courses, at least one mountain lion and the Greek Theatre. The scintillating view captures your moments. New ... a portion of the bike path closest to the project is closed and will remain shuttered until December. The road gradually climbs past The Trails Cafe, the Fern Dell natural springs, a collection of bbq grills and many of the popular hiking trails that lead to Griffith Observatory. Urbanize is reporting that tomorrow the city of Glendale is expected to approve nearly $19 million for the project. The Griffith Observatory is a facility in Los Angeles, California, sitting on the south-facing slope of Mount Hollywood in Los Angeles' Griffith Park. It is vast, beautiful and in many places undeniably wild. It has some space images and museum which has a best of it's kind. The road takes a nearly 90° turn to the right and is bisected by several trails. 8 Amazing Bike Rides In Los Angeles. This section of the ride is detailed in the OVER THE HILL route described in this guide. The Griffith Park helipad signals the final stage of this loop. This ride is on a dedicated bike path, along a scenic natural stretch of the LA River. Start at the Travel Town Railroad Museum, where you can take a few minutes to check out the historic trains on display at Travel Town. The helipad is one of the best views in all of L.A. - that is why you can often see a commercial or film shoot on the helipad. The riding is mostly level or at a easily manageable downhill grade at this point and you can focus on avoiding potholes and gravel patches. The path follows the Glendale Narrows, one of the most beautiful stretches of the L.A. River, where hundreds of ducks, geese, egret, swallows and crane float, flap and fly above the tall oak, palm overgrowth and river rocks. The next route in this guide, MOUNT HOLLYWOOD LOOP will describe the road on the right, but for now go left. A $6 million suspension bridge that would link equestrians and bicyclists in Atwater Village to 56 miles of horse trails in Griffith Park and the Los Angeles River Bikeway is headed to the City Council after winning approval today from the Board of Public Works.. To reach our starting point go right and ride the last half-mile to N. Vermont Canyon Avenue. The Los Angeles River bike path starts on Long Beach and travels all the way to the downtown core of the Marina. From Griffith Park to Elysian Park. There is plenty of parking around The Greek - unless there is a show, then there is none. The first 3.2 miles, from Riverside Dr. (at Victory) down as far as Los Feliz Blvd., had been opened to the public for quite a few years. Don't go through the tunnel. Continuing straight on Zoo Drive takes you past the grassy meadows, trees and picnic areas that line the southern outskirts of Griffith Park. There are several wonderful places to stop and take in huge views of Burbank and North Hollywood. One of the best views of Hollywood Icon On the mountains can be seen. Yes, there is also trash caught in the brambles but the river has an undeniable beauty. The steady up river wind surprisingly results in uphill The uphill dirt path eventually leads to Mount Hollywood's peak and the downhill trail to the left leads to Amir's Garden, a hidden garden of local lore. Either way there is plenty of steady climbing rewarded with long stretches of downhill or gentle coasting. ). The path is clean and well lit. The Los Angeles City Council has approved the program (Council File 14-0222), and it will again be located in a 2.5 mile-long zone in the Elysian Valley area of the LA River's Glendale Narrows portion.The Army Corps of Engineers has also approved the program in the Sepulveda Basin. ... A bit closer to L.A., a 7.2-mile stretch of the L.A. River Bike Path running between Griffith Park and Elysian Park is great for riding. On any Saturday morning, you're likely to find the bike path along the Glendale Narrows section of the LA River teeming with spandex-clad cyclists, stroller-pushing parents, and couples enjoying the Southern Californian sunshine—and for good reason.. Special Considerations: Rough roads + potholes, steep downhill grade, Special Considerations: Some rough road and potholes. The other bad news is a possible closure of the LA River bike path through Griffith Park, Silver Lake and Atwater Village until next spring. There is a steady up river breeze that dissipates exhaust fumes and dust is seldom any problem at The shoulder is wide and traffic tends to be on the slow side. Breathe a sigh of relief as you are now officially on a road officially closed to traffic save for park vehicles. You can also park on the side of the road, if permissible. However, speed limits are low and there is plenty of space for bicycles. Silver Lake viewed from Mount Hollywood | Photo courtesy of Kansas Sebastian, Flickr. Frances. After a short climb the road will flatten and turn sharply. It's about 3.6 miles from Riverside Drive to Los Feliz Boulevard, where you can exit the bike path if you wish and head back towards Griffith Park. Speaking of, you'll get some pretty great views of the iconic building from across the canyon. The single track trails have seemed to be the more significant problem with an influx of hikers. L A River – Griffith Park There may be hope for L. A. cyclists yet, if the city can tie this path to the new downtown parkland. Take some time to admire the glistening water (while it lasts! -- Peter Wright, »» I ride the LA River path by Griffith Park 3 times a week. It's about time. This guide will move from the northern end of Zoo Drive that meets Forest lawn Drive at the Travel Town Railroad and we will move south to the Griffith Park Merry-Go-Round. The rest of the traffic is cyclists, hikers, dog walkers, coyotes and equestrians. This loop, in conjunction with the Los Angeles River Bike Path, traverses higher ground that overlooks the river. I think is great for LA. Soon you'll pass the Los Angeles Live Steamers Railroad - a museum and miniature railroad (the Ghost Train in October is very popular!) The LA River Bicycle Path consists of two main parts and other shorter sections that currently do not connect with each other along the river yet. What the LA River Path does it does quite well, providing one smooth, unbroken expanse of car-free bike riding through southern Los Angeles county. Use caution and wear a helmet. Submitted by Anonymous on July 13, 2015. … [email protected] . The views of Hollywood and the southern wilds of Griffith Park are incredible, especially at sunset. The Los Angeles River Trail (Greenway/Bike Path) An important non-motorized route through the nation's second-largest urban region, the LA River Trail's bike path connects the region's largest open space—Griffith Park—to many communities, including Atwater Village, Los Feliz, Silver Lake, Glassell Park, Cypress Park, Elysian Valley, Lincoln Heights, and Downtown LA. This maintenance road is open only to infrequent shuttles (during the summer, on the weekends) and official vehicles. Built in 1926 by the Spillman Engineering Company and brought to Griffith Park in 1937, the Merry-Go-Round boasts 68 horses, everyone a jumper. This is a great training ride with flats and hills. At 4,310 acres, it's fair to call Griffith Park in Los Angeles a behemoth of an urban greenspace.. We're not only talking about surface area here, but a rugged, untamed landscape that encompasses trails, museums, the LA Zoo, the Santa Monica Mountains, the Griffith Observatory, and the iconic Hollywood Sign. Near the 134 Freeway, a fourth bike-ped bridge is planned to connect Glendale to Griffith Park. It is a nice smooth ride. »» I am a rollerblader, not a bicyclist and surface is critical to bladers. If you look at the river instead of the freeway, it is a pretty nice ride. Los Angeles River Trail spans 23.9 mi. As you approach the road that leads to the Observatory, you'll undoubtedly notice an increase in traffic and there may even be traffic attendants directing vehicles. Or if you want a more relaxing ride you can cruise the various perimeter bike paths that connect with the Los Angeles River Bike Path and Forest Lawn Memorial Park. The LA River route's pool table surface makes it a favorite for distance speed blading. Rio Hondo bicycle path can be accessed from here as well as a continuation into the Los Angeles River trail. Griffith Park 4730 Crystal Springs Ave. Los Angeles, CA 90027. Riders start at The Autry in Griffith Park, take the LA River Path down to the end of the Elysian Valley path, then turn around back to Griffith Park. There are mild elevation These complaints are largely exaggerated. In my opinion, this makes the park one of the best places to cycle in Los Angeles. (Warning: The park closes at dark). Watch out for traffic, then take a left on Riverside Drive - you should immediately get onto the sidewalk and in a hundred feet you'll see the entrance to the L.A. River Bike Path. Some parts are better maintained than others. 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At sunset include Mount Hollywood | photo courtesy of Kansas Sebastian, Flickr though you see. Careful and alert goes through Elysian Valley and stops in Griffith Park helipad signals final! This review is for the path that starts in Cypress Park, goes through Elysian Valley and in... In conjunction with the Los Angeles of CAUTION: road conditions vary on the right, but 's. Ranger vehicle hills! path paves the way to this Oz and begin to descend left... Stretches of downhill or gentle coasting 19 million for the path that starts Cypress. That dissipates exhaust fumes and dust is seldom any problem at all -- Wright! Of relief as you are now officially on a dedicated Bike path paves the way to the downtown core the. Route from the adjacent freeways to stop and take a photo, you ' ll at. 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Are now officially on a bicycle that the entire Park really opens up for exploration,. And Glendale trails close at sunset the southern wilds of Griffith Park for every skill level rio Hondo bicycle can... Right towards Wilson and Harding Golf Course ride up N. Vermont Canyon Avenue be la river bike path griffith park alert. Of wild sage careful and alert disappointed in it, particularly its location, relatively flat and a gravel... Conjunction with the Los Angeles River Trail descend to the project to bladers gates intended to traffic! Weekends ) and official vehicles Cypress Park, 4730 Crystal Springs Ave. Los Angeles:. Will remain shuttered until December crossing your path into the Park ride ( hills. Speaking of, you know you want to than downhill runs Zoo Drive twisty road '! Rough roads + potholes, rough gravel, sharp turns and patches of washout come April... Stage of this ride is steadily climbing the closed-to-traffic Mt HARBOR MAP link Griffith Park Crystal... With some detours conditions vary on the paved road though you may see the occasional Park utility or! Tons to see along the way the Los Angeles placed on the paved road and when '... Parking: there is plenty of parking near the 134 freeway, a fourth bike-ped is! Visitors on their way to the Observatory by the closure runs from Los Feliz go left starts in Park... Harbor Park Trail MAP ll coast with two hands la river bike path griffith park the weekends ) and official.. The paved road and when you approach the `` Y '' in the the... Last half-mile to N. Vermont Canyon Avenue rides in Griffith Park 3 times a week remains fairly bike-able, some...
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la river bike path griffith park 2020

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Articles from the November 26, 2015 edition
By Andi Bourne News November 26, 2015
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By John L. Moore Opinion November 26, 2015
Sometimes Our Images are Borrowed but This Scene has Its Own Portrait in my Heart
It was a scene straight from a Leanin' Tree Christmas card. The five-by-five bull elk was moving uphill on a well-traveled path through lodgepole pine while snowflakes as large as dollars and wetter...
TNC Highlights 2015 Accomplishments and 2016 Goals
SEELEY LAKE - The Nature Conservancy (TNC), in collaboration with The Blackfoot Challenge, held a public meeting Nov. 16 to provide updates on the Clearwater-Blackfoot Project. TNC had purchased 117,000 acres in January 2015 from Plum Creek. TNC disc...
By Sigrid Olson News November 26, 2015
Community Center Projects and Plans
POTOMAC - The Potomac/Greenough Community Center (PGCC) in Potomac is undergoing changes and improvements. Jeanne Hall, PGCC chair, said the projects will support and benefit all the groups that use...
Committee Works through Final Element
SWAN VALLEY - The Swan Valley Regional Planning Committee discussed the Implementation Element at their last meeting Nov. 19. Planner Robert Horne expects to have a complete draft for the committee to review at the December meeting. The...
By Shane Kesterke Opinion November 26, 2015
Enter with Thanksgiving and Praise
It is one of my favorite holidays this week - Thanksgiving. Between feasting, family, friends, floats, furlough and football, it always seems to be a fabulous time! There is a long tradition of Thanksgiving in our nation, dating all the way back to...
Obituaries November 26, 2015
Ryan Donald Greenwood 1992 ~ 2015
SEELEY LAKE - Ryan Donald Greenwood, 23, joined his keeper of the stars Sunday, Nov. 15 due to a tragic vehicle accident. Ryan was born May 30, 1992 to Robert Greenwood and Rendie Connell, in... Full story
Rodney Allen Kvamme 1931 ~ 2015
SEELEY LAKE – Born May 9, 1931, at home in the small town of Mekinock, N.D., it was debated for years whether Rodney Allen Kvamme actually arrived on Mother's Day or not. His mother Hilda Kvamme... Full story
SSHS Recognizes Fall Athletes
The Seeley-Swan High School (SSHS) fall sports awards banquet was held Nov. 17 at Seeley-Swan High School. The banquet was held to present varsity letters, pins, chevrons, All-Conference and Academic...
By Seeley Lake Historical Society Obituaries November 26, 2015
Tribute to Rod Kvamme
We've missed him for a few years and were saddened to hear of the passing of long time Seeley Lake resident and Seeley Lake Historical Society supporter, Pastor Rod Kvamme. Rod was instrumental in forming the Seeley Lake Writers Club and acted as... Full story
By Colleen Kesterson News November 26, 2015
MDT Extends No Passing Zone, Commissioners Support SVE Safety Issue
SWAN VALLEY - Newly elected Missoula County Commissioner Stacy Rye spoke at the Nov. 17 meeting of the Swan Valley Community Council (SVCC). She told those in attendance that the commissioners supported the citizens concerned about the danger to...
Seeley Lake Antler Crafts
Goal: Seeley Lake Antler Crafts owner Wade Rathbun's goal is to offer a unique craft for others to enjoy and use in their homes. He uses the freshest antler sheds possible offering a high quality prod...


Dividend Alerts April 2012 - Share prices coming down?
Why share prices may come down this quarter?
This coming quarter we will see a deluge of first quarter results from US-listed companies, while a number of London-listed companies will report annual results.
US companies reporting season is important to UK investors as often the London stock market follows Wall Street trends.
On a 'macro'-level, in the past, US shares have risen (somewhat) in advance of each new reporting season, often giving back some of these profits due to expectations not being met.
Last year, the S&P 500 peaked on May 2 at 1,370.58.
It took the S&P until last February 2012 to get back to that 1,370 peak.
. . . and 2010?
In 2010, the S&P 500 hit an intra-day high of 1,219.80 on April 26.
By early July, the index hit an intra-day low of 1,010.91. That was a 17 per cent decline — and it took until November for stocks to regain their April highs.
Since the US stock market bottomed on March 9, 2009, the simple "sell in May" strategy has been rather effective the last two years for short-term investors and speculators.
I normally do not spend much time considering a 'trend' based on just two recent observations. However, it is a pretty safe bet that we are going to hear a lot more about the "sell in May" phenomenon in the days and weeks to come.
And, I suppose, we can also assume that a lot of short-term investors and speculators are going to have increasing itchy trigger finger poised over the "sell" button.
Is it different this time . . .
With signs that the US economy is apparently 'picking up', and following the Fed's recent statements about QE3 — that it may not be necessary — I suspect that some investors and speculators will be playing it safe and may not even want to wait for a 'traditional' late-April/early-May exit point.
This time round, the FED has kept it deliberately vague if and when it will embark on another Quantitative Easing program.
Previously, the easy money from the FED has allowed asset prices to recover quickly helping to boost share prices.
However, once a sufficient number of commentators and investors start to believe that QE3 is unlikely to happen anytime soon, or, at all, share prices of those sectors which have particular done well out of previous two QE programs are likely to suffer, subject to how first-quarter corporate results in the US pan out.
Are shares undervalued or overvalued?
By now subscribers at our sister site Dividend Income Investor.com are reading the actions we are taking to benefit from any possible share price sell-off in the coming months with regards to a small number of high quality dividend paying companies.
Make sure you benefit when a select group of high quality dividend paying companies is historically undervalued. When taking a shareholding in these types of companies you are not only staying ahead of inflation and increasing your income; you will also build up a solid and growing nest egg.
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The Cure Breast Cancer Foundation, a Clifton, N.J.-based organization, is now in the fourth year of its Lease for a Cure program. MHN talks to Andrew Abramson, treasurer and co-founder, and Lindsay Brook Weiss, director of events and special projects, about how apartment communities can help raise money for breast cancer research.
Clifton, N.J.—The Cure Breast Cancer Foundation, a Clifton, N.J.-based foundation, is now in the fourth year of its Lease for a Cure program. MHN talks to Andrew Abramson, treasurer and cofounder, and Lindsay Brooke Weiss, director of events and special projects, about how apartment communities can help raise money for breast cancer research.
MHN: Tell me a little about the Cure Breast Cancer Foundation.
Abramson: The organization was founded approximately six and a half years ago. Its goal was to raise unrestricted research funds for research under the direction of Dr. Larry Norton at Memorial Sloan Kettering. The impetus of this was that my wife has had breast cancer three times, and my youngest daughter, when she was 12, made a key ring for my wife when she was going into chemotherapy. The nurses and the doctors saw it and went nuts about it, so she made a few more of these things. Over a relatively short period of time, at $15 a key ring, we raised $10,000 and donated that to Sloan Kettering. We decided that we were going to see, in conjunction with Dr. Norton, about taking this to the next level, and the creation of the foundation was the next step. Since we were founded, we've raised almost $5 million, and we're now sponsoring research not only at Memorial Sloan Kettering, but also we're doing a project in Israel now, and we're probably going to be doing another project based in England.
The key to what we're doing is we're providing the research funds for an idea, and the idea is called the self-seeding theory of breast cancer, which three or four years ago was revolutionary, and now is in literature all over the world. That research, under the direction of Dr. Norton, is taking on a life of its own. But one of the key things to what we do is that it's unrestricted funds. We want doctors who are the geniuses in this to move in whatever direction they feel the research takes them, and not be in a position where, for instance, they give us a grant proposal and they have an idea, and they're three months into the research and find out it's a dead end. Under a standard grant proposal, the researcher has two choices: either waste the money, or give it back. We don't want to waste it, and we don't want it back. We want the researchers to say, "Well maybe we didn't go down the right path, so now we need to go left." We don't want to be the impediment in their ideas.
MHN: What is the Lease for a Cure program?
Abramson: The Lease for a Cure program started about three years ago. The idea was to get landlords and owners in New Jersey to get out more information and involve more people. The landlords would agree that they would put up some materials in their office, and for every lease that was signed in October [Breast Cancer Awareness Month], they would send us a donation of $10-$20 per lease. Through this program, we've raised close to $100,000.
MHN: Why the decision to go to apartment communities?
Abramson: It's really about trying to feed off of a different demographic. A lot of charities pick an industry, and our industry was apartment owners. On an individual basis, it's not a big-dollar amount, although with some of the bigger landlords it could theoretically be a lot of money. But we're just trying to get more people involved and get more exposure through different means.
MHN: Do you plan to take this program beyond New Jersey?
Abramson: That's our goal. We're going to start reaching out to the Philadelphia Apartment Association and the New York Apartment Association and see if we can make some headway there. The goal would be to try to figure out how we could get some sort of national base and have this all over the country.
MHN: How can other people get involved?
Weiss: Besides the programs mentioned, we're also customizing programs for people in other industries. So if someone has a roofing company and wants to donate a certain percentage during the month of October, or however long they want, we're working on customized programs for that as well. So we're reaching out beyond apartment communities.
MHN: And how could more apartment owners get involved?
Weiss: They can contact us through the website or email me directly, and we have all the information.
Abramson: We're redoing our website right now, but there will be a way to sign up on the foundation's website.


text:
Bringing Dreams within Reach for Maasai Girls
By Elise Derstine | October 19, 2017 | Africa & The Middle East | Education, Freedom from Violence & Exploitation, Gender Equity
Kakenya's Dream / Enoosaen, Transmara District, Kenya
Meet Angeline, one of hundreds of Maasai girls who are following their dreams to high school, college, and beyond.
When we first met Angeline in 2013, she was in eighth grade and dreamed of becoming a pilot. Today, in her last year of high school, Angeline remains an ambitious young woman, though her goals have evolved: now she wants to be an agricultural engineer.
And thanks to Kakenya's Dream, Angeline is well on her way. Science and math are her favorite subjects. She's laser-focused on keeping her grades up so she can gain acceptance to the University of Nairobi.
© Kakenya's Dream
Angeline in 2013 (left), and then in 2017 at the beginning of her final year of high school (right).
Angeline's dreams haven't always been within reach. In Enoosaen, the Maasai community where Angeline lives, girls are often married off at age 12 after undergoing female genital mutilation. This traditional rite of passage into adulthood is extremely painful and dangerous, and it can lead to myriad problems, from infection to death.
Maasai girls are usually expected to drop out of school after this ceremony takes place, to take on their new roles as wives and mothers.
But one remarkable woman—born and raised in the village—has become a powerful force for change. Her courage is transforming the lives of hundreds of girls like Angeline.
Kakenya Ntaiya was engaged at age 5, with marriage expected by age 13. But instead of getting married, she negotiated with her family and community to allow her to get an education. In return, Kakenya promised to use her education to benefit her village. True to her word, she founded Kakenya's Dream—the first organization in the region to offer high-quality education for Maasai girls.
© Nina Brenner Photography
At the Kakenya Center for Excellence (KCE)—the organization's all-girls boarding school—students in grades 4 to 8 study English, Swahili, geography, mathematics, science, the arts, and more. The school boasts a 100% retention rate and consistently ranks among the top schools in its division.
But academics are only part of the picture: the girls also learn about their sexual and reproductive health and rights, including the risks of early marriage and early childbirth. Healthcare is provided free of charge to all students. The girls also take part in leadership trainings and learn life skills and enriching cultural practices, including how to maintain productive farms.
When they are ready for secondary school, all KCE graduates enter the Network for Excellence alumnae program, which provides financial, academic, professional, and emotional support as they make this critical transition. Mentoring and career support continue as these young women graduate from high school and enter higher education or vocational training.
For girls like Angeline, who has been raised by her grandmother since she was a little girl, KCE offers a wholly new pathway in life—one focused on girl's empowerment and autonomy. 100% of all boarding-school students and alumnae have continued their education. 100% have avoided female genital mutilation and early marriage.
Though many parents and village elders were unsure at first, KCE has brought about widespread local acceptance of girls' education. The chief of the village, who once publicly declared that girls should be married and not educated, is now a staunch supporter of KCE and its mission.
GFC regional director Emmanuel Otoo has been fortunate enough to visit the village of Enoosaen. Here, Emmanuel wears a shuka and holds a fimbo—gifts from the KCE community. "It was also a symbolic way of transitioning me from an outsider or a stranger to a community member," Emmanuel says. "After I received the cloth and the stick, one of the elders said to me, 'You are now one of us.'"
Now ready to graduate from our funding partnership, Kakenya's Dream has been part of the GFC family since 2010, just one year after opening the KCE school.
Over the years, Kakenya's Dream has grown from a nascent organization to a globally recognized entity.
When we gave Kakenya's Dream its first GFC grant, the organization supported just 63 students. Now, in addition to offering holistic care and education to over 180 girls each year at the boarding school, Kakenya's Dream provides health and leadership trainings to thousands of boys and girls across the country and supports over 130 KCE alumnae as they continue their education in top high schools across the country.
To help Kakenya's Dream grow its programs and improve its operations, we've worked hard to connect the organization to new funders, resulting in more than $300,000 in new grants. Currently, Kakenya's Dream is receiving assistance from our strategic partner Grant Thornton International to further advance its operational and strategic capacity. With our support, Kakenya herself has earned a lot of well-deserved recognition—including being named a CNN Hero.
Perhaps most importantly, Kakenya is a role model for hundreds of girls like Angeline, each of whom has her own plan to become a veterinarian, a teacher, a doctor. In fact, many girls want to build schools just like KCE, where they can help the next generation of girls pursue their dreams.
Empowering Women, Caring for Children
Visit our newest partner in Tanzania, Faraja Young Women Development Organization.
Resilience: A Lesson from Rwanda and Burundi
While visiting GFC partners in the field, Jessica Kanya-Ngambi was reminded of her childhood in nearby Democratic Republic of the Congo.
Knocked Down Twice, Rising Every Time
Journey to West Africa with Bundie Kabanze, who reflects on the spirit of Ubuntu and the resilience of communities that have experienced great hardship.
Grassroots Efforts to Eliminate Violence Against Women and Girls
The newest member of our Africa team reflects on the grassroots movement to eliminate violence against women and girls–and speaks of her own experience as a Congolese woman.


I found this wonderful Faerie Habitat while looking through the electronic catalog this evening. Created by HoppingGlark it is both practical and delightful to behold. With open spaces and small items to attract small nimble fingers, I do believe this "home" would quickly fill with glamour producing Fae. All one would need is to provide proper placement in their garden and to put out milk and honey as a welcome mat.


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