The present invention relates to a process used in the manufacture of CMOS integrated circuits. The process involves the steps of forming in a silicon wafer, contiguous surface regions of opposite conductivity types. The process involves the forming of islands of composite layers of silicon nitride and silicon oxide over various portions of the surface regions. The process further includes the step of implanting boron selectively into the surface regions of both conductivity types not covered by the islands and covering the p-type surface regions with an implantation mask. Ions are then implanted from the group consisting of arsenic and phosporous selectively into the n-type surface regions not covered by the ions, the dosage being substantially the same for both implantations. The implantation mask is then removed from the p-type surface regions. The wafer is then heated in an oxidizing atmosphere for oxidizing the surface regions not covered by ions and forming under the oxidized regions p-type chanstops in the p-type surface regions and n-type chanstops in the n-type surface regions. The islands are then removed. The final step of the process involves forming n-type MOS transistors in the p-type surface regions and p-type MOS transistors in the n type surface regions previously covered by islands.
This invention relates to a process for making complementary integrated circuit devices comprising the steps of making in a silicon body a first region of p-type conductivity and a second region of n~type conductivity, forming within the first region at least one third region of relatively higher doped p-type conductivity and forming within the second region at least one fourth region of relatively higher doped n-type conductivity.
A significant trend in semiconductor manufacture is the steady increase in the number of elements that are included on a single chip. This has involved making the individual elements smaller and packing them closer to increase the density. With the increase in packing density, there has grown the need for isolation barriers between elements. Typically these isolation barriers take the form of regions of relatively high doping now commonly known as chanstops (or channel stops or guard rings) to reduce leakage between neighboring elements, as might be caused by spurious conductivity inversion of the regions between active elements. ~uch inversions are apt to occur, for example, because of the voltages on the conductors overlying the chip used for applying operating voltages to the active elements. These chanstops advantageously are llsually formed underneath a field oxide, which is a relatively thick oxide used to cover the chip at passive regions between the active elements.
Complementary in-t~egrated circuits are those having devices in which like regions have an opposite (or complementary) conductive type Complementary MOS (C-~OS) circuits are those in which n-channel MOS transistors are formed in a surface region called a "tub" of p-type conductivity and p-channel MOS transistors are formed on the same chip in a surface region or tub of n-type ~.
( conductivity-In complementary integrated circuits, there will often be requirements for contiguous transistors in the chip of the same conductivity type,in which case a single chanstop will generally be sufficient for isolation; and other requirements for contiguous transistors of opposite conductivity type in which case a chanstop of each type is usually needed for optimum isolation. For saving space it is usually advantageous that this pair of complementary chanstops be contiguous or back-to-back, and it will be convenient to refer to such a structure as a twin chanstop.
One consideration which is pervasive in the manufacture of integrated circuit devices, particularly in high densities, is that of reducing the costs of fabrication. Typically this requires a process which permits high yields, which end is best served by a process ~hich includes few critical steps, particularly masking steps requiring accurate registration. Another problem is that of making chanstops tha~ have high breakdown voltages at the junction formed between the chanstop and other regions of the chip, including a chanstop of the opposite conductivity type.
In accordance with the invention, these problems are solved in a process as described above characterized in ~5 that the surface portions of the silicon body where the third and fourth regions are to be formed are selectively implanted with boron ions, the surface portions of the silicon body where fourth regions are to be formed are selectively implanted with phosphorus or arsenic ions, and the silicon body is selectively masked and is heated so as to oxidize selectively the-third and fourth regions. In a preferred embodiment the third and fourth regions are chanstops.
In accordance wi~h an aspect of the invention there is provided in the manufacture of CMOS integrated circuits, the steps of forming in a silicon wafer contiguous surface regions of opposite conductivity types, forming islands of composite layers of silicon nitride and silicon oxide over various portions of the surface regions, implanting boron selectively into the surface regions of both conductivity types, not covered by islands, covering the p-type surface regions with an implantation mask, implanting ions from the group consisting of arsenic and phosphorus selectively into the n-type surface regions not covered by islands~ the dosage being substantially the same for both implantations, removing the implantation mask from the p-type surface regions, heating the wafer in an oxidizing atmosphere for oxidizing the surface regions not covered by islands and forming under the oxidized regions p-type chanstops in the p-type surface regions and n-type chanstops in the n-type surface regions, removing the islands, and forming n-type MOS transistors in the p-type surface regions and p-type MOS transistors in the n-type surface regions previously covered by islands.
One characteristic of a process in accordance with the present invention is that by the addition of a single masking step beyond those normally required there can be provided, where desired, single chanstops of either type or twin chanstops, self~aligned under the field oxide.
FIGS~ 1 through 10 show cross-sections of a portion of a silicon wafer at various stages, when being processed in accordance with an illustrative example of the inventive process.
The invention is a method for forming in a silicon chip complementary integrated circuits with appropriate chanstops at the surface of the chip self-aligned with an overlying field oxide.
A feature of the inventive process is the technique for forming the chanstops of either type or twin aligned with the field oxide. Basically it involves only a single extra masking step/ after the initial formation of the twin-tub configuration, to those normally used to form a complementary pair of transistors. This masking step is used to confine the donor ion implantation (typically phosphorus or arsenic) only to the localized regions where n-type chanstops are to be formed, and follows the acceptor ion implantation, (typically boron) which is localized only to the regions where the chanstops are being formed and which uses for this purpose the mask previously used to define the regions where active transistors are to be formed. Use is thereafter made in the preferred embodiment of differences in segregation characteristics of donor and acceptor ions in a growing oxide/silicon interface to control the doping levels of the differently implanted regions and provide the desired doping in individual tubs.
In an illustrative embodiment of the invention there is first formed in each chip portion of a silicon wafer at least one pair of contiguous n-type and p-type tubs at a common surface of a layer of relatively high resistivity. The n-type tub is designed to accommodate the p-channel enhancement mode transistor and the p-type tub is designed to accommodate the n-channel enhancement mode transistor of a complementary pair of such transistors.
Then there are formed the nitride/oxide islands which define where the active transistor regions are to be formed in the tubs~ Advantageously the resist which is used to define the islands is also maintained over the islands and a p-type implant is done over all the exposed areaD The resist~covered islands act as a mask and shield from this implantation the covered areas where the transistors are to be formed. The ions implanted in the exposed regions of each p-type tub will eventually form the p~type chanstops there.
Then the resist is removed from the islands and a new resist layer is formed over the p-type tub such that only the surfaces of the n-type tub regions not already covered by the nitride/oxide islands are exposed. This is the only additional masking operation that is required to the normal sequence of masking steps~ Next, an n-type implant is performed. The implanted ions enter only the unprotec-ted regions of the n-type tubs and these will eventually form the n-type chanstop there. Then the resist is removed from the surface of the p-type tub and the wafer is selectively oxidized in the regions not covered by the nitride/oxide islands. If the doses and energies of the two implants are adjusted appropriately, at the end of this oxidation step there will have been formed beneath the newly formed localized thick oxide regions p-type chanstops at the desired regions of the p-type tubs~ n-type chanstops at the desired regions of the n-type tubs, and twin chanstops between contiguous p-type and n-type tubs.
One possible technique for achieving this desired result is to make the donor implant dose sufficiently higher than the acceptor implant dose that the donor ions overcompensate the acceptor ions in the n-type regions which have been exposed to both. This has the disadvantage that the p-n junction formed between the two chanstops tends to have a low reverse breakdown value, a factor which may be limiting for some applications.
Moreover, of the two donors menticned, the higher diffusion rate of phosphorus usually makes it preferred since it permits the use of lower implant energies for a desired depth of chanstop.
After formation of the chanstop regions1 the p-channel transistors are formed in the n-type tubs and the n-channel transistors are formed in the p-type tubs in any suitable fashion. Advantageously, this involves acceptor ion implantation of locali~ed regions of the n-type tubs using the gate electrode as a mask to form the source/drain regions of the p-type MOS transistors and donor ion implantations of localized regions of the p-type tubs using the gate electrode as a mask to form the source/drain regions of the n-type MOS transistors.
Alternatively other forms of transistors can be formed in the separate tub regions.
With reference now to the drawing, in FIG. l there is shown a portion of a silicon wafer 10 corresponding to a portion of a silicon chip in which there will be formed complernentary transistors, for example, as part of a very large scale integrated circuit involving a number of complementary transistors. Iypically after the processing is complete each wafer is divided into a number of chips for individual packagingO Like reference numbers are usually used throughout the figures to denote the same part or regions in different stages of processing. The drawing is not to scale because of the much smaller vertical dimensions typically involved.
There is first prepared in the silicon wafer portion being viewed a pair contiguous p-type and n-type tubs to form the preferred twin tub structure in which will be formed the complementary transistors.
To this end, the silicon bulk region 11, which is n-type and of relatively low resistivity, first has grown thereon a lightly doped epitaxial n-type layer 120 The use of relatively lightly doped epitaxial layer on a relatively heavily doped substrate of the same resistivity type is known to provide protection against parasitic SCR-type latchup in CMOS devices.
Then a relatively thin, typically 350 Angstroms, silicon dioxide layer 13 is thermally grown on the surface of the epitaxial layer; and over it is formed a thicker silicon nitride layer 14, approximately 1200 Angstroms thick, preferably by a low pressure chemical vapor deposition--process. As is known, the use of the intermediate oxide layer serves as a buffer layer and makes the silicon surface less vulnerable to high temperature steps.
Next as shown in FIG. 2, the silicon nitride/silicon oxide layer 13,14 is patterned in known fashion to remove it from the regions 15 in which the n-type tubs are to be formed and thereafter the waer is e~posed to an implantation of donor ions, preferably phosphorus. The ions, shown by the negative sign, penetrate the silicon essentially only in region 15 where the layer 13,1~ has been removed. The donor dosage and implantation energy are chosen to provide, after ion activation, the desired characteristics to the n-type tubs.
After this implantation, the wafer is cleaned in the usual fashion, and then as shown in FIG. 3 a relatively thick layer 16 of silicon dioxide, about 4000 Angstroms thick, is thermally grown selectively over the region 15.
The region 17 underlying the re~aining silicon nitride layer 14 remains essentially unaffected by this oxidation step because of the rnasking effect of the nitride layer 14.
It is to be noted, as seen in FIG. 3, that this process leaves a small ledge 18 in the silicon at the edge of the donor implanted region~ Next, the remainder of the silicon nitride layer 14 is selectively removed by a suitable etch ttypically aqueous H3PO~) which does not significantly affect the silicon dioxide layers 13 and 1~.
Then as illustrated in FIG. 4, the wafer is bombarded with acceptor ions, advantageously boron, with an energy sufficient to penetrate readily the comparatively thin oxide layer 13 but insufficient to penetrate the thick oxide layer 16, and there is implanted selectively in region 17 acceptor ions, shown as plus signs, to a concentration adequate to convert, after ion activation, the region 17 to p~type with the doping desired for forming the p-type tub.
After removing the oxide layers 13 and 16 by suitable etching and after annealing to drive in and activate the implanted ions by moving them to lattice positions, there results a portion of a wafer as shown in FIG. 5 comprising a layer 12 in which are formed contiguous p-type tub 19 and n-type tub 20, forming a p-n junction at ledge 18. While the two tubs are shown penetrating to equal depths into layer 12, this is not necessary so long as each is deep enough to house the transistors to be incorporated therein. Up to this point, the processing is essentially the same as that described in the previously mentioned copending application to which reference can be had for more details.
It should be noted that in some instances it may be unnecessary to have used at this state an annealing step specifically to drive in and activate the implanted ions since it may be possible to depend, for this purpose, on the heating steps that will occur in later steps of the process.
~ s the next step, there is defined in each tub the active region where its transistors are to be formed.
In commercial devices, there normally will be a plural number of transistors of the one appropriate type in 5 each tub. Since the usual circuit includes more n~type transistors than p-type transistors, the p-type tubs which house the n-type transistors will normally be larger to accommodate more transistorsO However, for simplifying the exposition~ two transistors only are being shown in each tub. To this end, there is formed again over the entire surface a composite layer typically including a thermally grown silicon oxide layer about 100 Angstroms thick contiguous to the silicon chip and an overlying silicon nitride layer about 1200 Angstroms thick. Conventional processing is then used to form photoresist-covered silicon nitride/silicon oxide islands in each tub region, which will essentially define the regions of the tub in which its transistors will be formed. Anisotropic dry etching advantageously is used in known fashion to form the islands. In FIG. 5, the islands 22 are shown still covered with the photoresist protective coating 23 used to mask the islands during the reactive ion etching. The wafer is then bombarded with boron ions to implant selectively the uncovered surface regions as indicated by the positive signs. This advantageously is a high energy implant, typically using 100 thousand electron volt energies and a dose of 5xlO12/cm2.
associated with this tub Some portions of n-type tub 20 will be covered by the islands 22~ but other portions will be exposed. Then the wafer is subjected to a relatively low energy phosphorus ion implant (typically 30 thousand electron volt energies) at a dose of 5xlO12/cm2 to implant phosphorus ions in the exposed region of the n-type tub 20 and these are shown by negative signs. The regions of tub 20 underlying the islands 22B are kept substantially free of such ions. The photoresist 25 is then removed and the wafer cleaned with li-ttle disturbance of the islands 22A and 22B.
Then the wafer is heated in an oxidizing atmosphere for the selective oxidation of the exposed silicon surface lying between the islands, as in the conventional localized oxidation process, for ~rowing the thick field oxide between the islands.
During the growth of the field oxide, advantage is taken of the fact that phosphorus (or arsenic) has a greater tendency than boron to move out of the growing oxide region and to accumulate in the underlying silicon.
As a result, in regions as in portions of tub 20 where both boron and phosphorus were implanted, as the field oxide grows it tends to retain the boron but to reject the phosphorus. Consequently in the underlying silicon, the phosphorus concentration quickly builds up and soon overwhelms the boron even when the implanted concentrations of boron and phosphorus had been initially substantially equal~ For this reason it is practical to make the two implants of substantially the same dosage, which has been found to be advantageous.
As a result, as shown in FIG. 8, there is formed in the regions of the n-type tub 20 underlying the field oxide 27 heavily phosphorus doped n-type chanstops 28.
Similarly, underlying the field oxide 27, in the p-type tub 19, there will be formed the heavily boron-doped p-type chanstops 29. Where the two tubs are contiguous, there is formed the twin chanstop with each individual chanstop 28~29 in its appropriate tub. Each chanstop accurately underlies the overlying field oxide.
There are now removed the islands 22A,22B to expose the wafer where the active devices are to be formed to provide the structure shown in FIG. 9 where the p~type tub 19 includes p-type chanstops 29 at its surface, where they underlie the thick field oxide 27, and the n-type tub 20 includes n-type chanstops 28 at its surface where they underlie the thick field oxide 27.
In one typical application of the described process~ each chanstop of a twin chanstop located at the interface between two tubs had a narrowest dimension of about S microns, while the single chanstops located on interior regions of a tub had a narrowest dimension of about 3.5 microns. In the n-type tub, the active region had an excess phosphorus doping of 2xlOl~ per cm3 and in the p-type tub/ the active region had an excess boron doping also of 2X1016 per cm3. Each of the chanstops was a fraction of a micron deep and each p-type chanstop had an excess boron concentration of about 4xlOl~ ions per cubic centimeter, and each n-type chanstop had an excess phosphorus concentration of about 1x1017 ions per cubic centimeter.
After this stage of processing is reached, a variety of techniques are available for further fabrication, and a particular choice would be dictated primarily by the end result sought.
~ lso in some instances, it may prove advantageous to form one or more bipolar junction transistor or junction field-effect transistor in one or more of the tubs.
One illustrative technique for forming complernentary enhancement-mode MOS transistors in the tubs begins by forming a thin gate oxide layer over the surface of each of the active re~ions in the p~type and n-type tubs. This is followed by formation of the gate electrodes. Usually it is advantageous to use the same doped-polycrystalline silicon material for the gate electrode conductor of each of the two transistor types and to have the same threshold voltage for the two types. This may require some extra treatrnent of the surface of one of the two tubs if this factor was not adequately provided for when the two tubs were formed initially. For example, if n-doped polysilicon is to be used for the gate conductor, it may be necessary to use a shallow boron implant at the surface of the n-tubs to ma!~e more positive the threshold voltage of the p-channel transistors to be formed there.
In this instance the p-type tubs would be masked with a photoresist while boron ions were implanted into the n-tubs.
typically it is preferred to do the source and drain implantations through this oxide so that it can protect the silicon surface from damage.
Then there follows a boron implant which serves to form the p-type source and drain zones of the p-channel transistors in the n-type tubs. It typically is unnecessary to mask -the p-type tub during this operation since the boron implanted there can readily be overdoped subsequently by a phosphorus implantation. However, before such phosphorus implantation to form the n-type source and drain regions of the n-channel transistors in the p-type tubs, the n-type tubs are masked against such implantation.
This is readily done by appropriately patterning a photoresist layer deposited initially uniformly over the wafer. After the mask is provided, the wafer is exposed to a phosphorus ion beam for formation of the desired source and drain regions of the n-channel transistor. This implantation typically also serves to dope the polysilicon gate electrodes and any runners to increase their conductivity.
and the gate oxides 33 with their gate electrodes 33A.
Within the n-type tub 20 are a pair of p-channel enhancement-mode transistors formed by the p-type source/drain regions 34,35, their electrodes 34A,35A, the gate oxides 36 and their gate electrodes 3ha. Separating the individual transistors are portions of the thick field oxide 27 under which lie the chanstop. Separating the two n-type transistors in the p-type tub is the single p~type chanstop 29, and separating the two p-type teansistors in the n-type tub is the single n-type chanstop 28.
phosphorus-doped glass 40 covers all portions of the surface of the chip through which protrudes the various electrodes 7 It should be understood that the specific process described is illustrative of the preferred embodiment of the invention but that variations may be made consistent with the genera] principles of the invention. For example, though it has proved advantageous to apply the invention to twin-tub technology, the principles should be applicable to other technologies that provide surface regions of appropriate doping for the formation of complementary transistors in such surface regions.
1. In the manufacture of complementary integrated circuits in a silicon wafer, the process for forming complementary chanstops at the surface of the wafer between regions where transistors are to be formed comprising the steps of, providing a silicon wafer whose surface includes p-type and n-type regions in which transistors are to be formed, implanting acceptor ions selectively in the surface regions of the wafer where chanstops are to be formed in both the p-type and n-type regions, implanting donor ions selectively only into the n-type regions where the n-type chanstops are to be formed, the acceptor ions being chosen to have a greater tendency to segregate in a growing oxide than the donor ions and the dosages being substantially similar, and heating the wafer in an oxidizing atmosphere while the portions of the wafer in which chanstops are to be formed are selectively exposed for oxidizing the surface regions where chanstops are to be formed, whereby as a result of the difference in segregation characteristics, underlying the oxide there are formed in the p-type surface regions localized p-type chanstops where acceptor ions are in excess and in the n-type surface regions localized n-type chanstops where the donor ions are in excess.
2. The process of claim 1 in which boron is the acceptor and either phosphorus or arsenic is the donor.
3. The process of claim 1 in which the silicon wafer includes at its surface p-type and n-type tubs for forming the p-type and n-type regions, the tubs having been formed in a layer of higher resistivity.
where p-type and n-type surface regions are contiguous and form a p-n junction, there is formed a twin chanstop underlying the oxide.
5. In the manufacture of integrated circuits which include complementary transistors and in which chanstops are provided for isolation between transistors, the steps of, forming in a silicon wafer surface regions of opposite conductivity types, providing an implantation mask over those portions of each region in which transistors are to be formed, exposing the wafer to a boron ion beam of a first dosage for implanting boron in unmasked portions of both types of surface regions, providing an implantation mask over the p-type surface regions, exposing the wafer to a beam of ions of a second dosage taken from the group consisting of phosphorus and arsenic ions for implanting such ions in unmasked portions of the n-type surface regions, the first and second dosages being substantially the same, exposing to an oxidizing atmosphere selectively those portions of the surface regions in which chanstops are to be formed while heating the wafer in the oxidizing atmosphere for a time to oxidize the exposed portions for forming beneath the oxide p-type chanstops where boron ions were implanted and n-type chanstops where both types of ions were implanted, and forming transistor devices in the regions between the regions in which chanstop were formed.
6. In the manufacture of CMOS integrated circuits, the steps of forming in a silicon wafer contiguous surface regions of opposite conductivity types, forming islands of composite layers of silicon nitride and silicon oxide over various portions of the surface regions, implanting boron selectively into the surface regions of both conductivity types, not covered by islands, covering the p-type surface regions with an implantation mask, implanting ions from the group consisting of arsenic and phosphorus selectively into the n-type surface regions not covered by islands, the dosage being substantially the same for both implantations, removing the implantation mask from the p-type surface regions, heating the wafer in an oxidizing atmosphere for oxidizing the surface regions not covered by islands and forming under the oxidized regions p-type chanstops in the p-type surface regions and n-type chanstops in the n-type surface regions, removing the islands, and forming n-type MOS transistors in the p-type surface regions and p-type MOS transistors in the n-type surface regions previously covered by islands.
7. The process of claim 6 in which the contiguous surface regions are moderately doped regions formed in a more lightly doped layer.
8. The process of claim 6 in which the more lightly doped layer overlies a more heavily doped layer.
9. The process of claim 6 in which the dosage of the boron implant is substantially the same as that of the phosphorus or arsenic implant.
10. The process of claim 9 in which the process of forming contiguous surface regions of opposite conductivity type includes the steps of forming on a substrate of relatively low resistivity an epitaxial layer of higher resistivity and like type, forming a composite silicon oxide-silicon nitride layer over the epitaxial layer and removing the composite layer from selected regions of the epitaxial layer, implanting donor ions selectively into regions of the epitaxial layer where the composite layer has been removed, heating the substrate in an oxidizing atmosphere for forming over the implanted region an oxide layer appreciably thicker than the oxide layer in the composite layer, removing the silicon nitride portion of the composite layer, and implanting acceptor ions selectively into regions of the epitaxial layer covered only by the remaining oxide layer portion of the composite layer, whereby there resutls in the epitaxial layer contiguous regions rich in either acceptor or donor implanted ions.
11. The process of claim 9 in which the donor and acceptor ions implanted in the epitaxial layer are of phosphorus and boron, respectively.
12. In the manufacture of complementary integrated circuits in a silicon wafer, the process for forming complementary chanstops at the surface of the wafer comprising the steps of, providing a silicon wafer whose surface includes p-type and n-type regions, masking those portions of both regions where transistors are to be formed leaving unmasked those portions where chanstops are to be formed, implanting acceptor ions selectively into portions where chanstops are to be formed in both types of surface regions and donor ions into portions where chanstops are to be formed selectively only in the n-type surface regions, the acceptor being chosen to have a greater tendency to segregate in a growing oxide than the donor ions and the dosages being substantially similar, and heating the wafer in an oxidizing atmosphere while the portions of the wafer in which chanstops are to he formed are selectively exposed for oxidizing the surface regions where chanstops are to be formed for a time sufficient that as a result of the difference in segregation characteristics underlying the oxide there are formed in the p-type surface regions localized p-type chanstops where acceptor ions are in excess and in the n-type surface regions localized n-type chanstops where the donor ions are in excess.
13. A process in accordance with claim 12 in which the silicon wafer has a surface which is initially of relatively high resistivity and in which portions of the surface are selectively implanted with acceptor ions and the remaining portions are selectively implanted with donor ions whereby the wafer has a surface which includes p-type and n-type regions which are contiguous and which are of relatively lower resistivity than the original surface.


text:
Q: GetStringAsync analogue for other methods (put, post, etc) Someone can tell me why for GET requests there is an option to get content out of the box via GetStringAsync. And for the other methods (POST, PUT...) there no such thing?
It's shorter to write a class to work with some API in the case of GET
HttpResponseMessage response = await client.GetAsync("random-url");
string content = await response.Content.ReadAsStringAsync();
SomeObject result = JsonSerializer.Deserialize<SomeObject>(content);

//shorter version
string content = await client.GetStringAsync("random-url");
SomeObject result = JsonSerializer.Deserialize<SomeObject>(content);

But in other cases, you have to write an additional line. I wouldn't say that this has a terrible effect on my performance, but the reason for the exclusion from the standard class is not clear

redpajama_set_name: RedPajamaStackExchange


Rio Tinto plc (the "Company") today announces that on 14th June 2018 it purchased the following number of ordinary shares of 10 pence each in the Company (the "Ordinary Shares") on the London Stock Exchange from Deutsche Bank AG, London Branch. These shares will be cancelled.
Following the cancellation of the Ordinary Shares repurchased, the Company will have 1,326,489,643 Ordinary Shares in issue. To the extent that further Ordinary Shares are repurchased under the programme, these will also be cancelled.


Winter blues can be transformed into beauty through creative writing.
January and February seem like never-ending months. By the third week of the new year, December really does feel like it happened last year — as in, way back in the past, you know, before January came along and stomped on it. Then February makes an appearance, reminding you there are still weeks to go before milder weather may (hopefully) lift you out of your lonely blues with its sweet promise of rejuvenation.
That is how I felt when I found myself jobless in January 2018. The coldest part of winter had often been a challenge for me and without a job to keep me connected with others, the winter months appeared more threatening than ever. The big D-word had imprinted itself on me once again. And, truth is, I'm not unique. By the age of 40, 50 per cent of Canadians will have dealt with depression at some point. And of those, only 49 per cent will seek help from a doctor.
In my case, I'd tried traditional therapy, but it hadn't helped much. Talking things out just didn't do it for me. Then I read Dr. Gillie Bolton's book, The Therapeutic Potential of Creative Writing: Writing Myself,in which she writes about the health benefits in creative writing. Bolton states, "writing is a kind and comparatively gentle way of facing whatever there is to be faced." So, I decided to try something new: I'd escape the drab by writing a work of reality-based fiction.
The magical part of creative writing is that it allowed me to express myself and engage my imagination in a way that changed my brain's habitual thought pattern. Rather than succumb to my feelings of loneliness and despair, I grabbed them by the horns and plopped them into my story. My depression had not come out of nowhere, it had a history and was full of cause-and-effect relationships, but it also wasn't something I could do nothing about. By writing about my feelings and experiences, I could sort through them, make sense of them, and prevail over them. Writing enabled me to transform from "victim" or "survivor" to superhero.
Before questioning your ability as a writer, know that you don't need to be an expert in syntax or a guru in knowing thyself to create a piece of meaningful literature. In philosopher Jean-Francois Lyotard's words, "We write before knowing what to say and how to say it, and in order to find out, if possible." First drafts are for uncovering meaning, leave the syntax for the following drafts, and the 'guru' moments will pop up as you go.
I did it and so can you. Here's what worked for me.
Get started with a 10-minute brain dump: pick a topic that matters to you and write whatever comes into your mind about it, non-stop, for 10 minutes, no thoughts about grammar or syntax, no rules. Topics could include an event, a person, a dream, an experience, a feeling, or something else that had an effect on you. I chose a traumatic experience I had as a teen.
Now that you have your subject, it's time to develop your theme. What do you want to say with your story? What message do you want to send? My main message was that bullying and sexual assault during the teen years have long-lasting effects that must be more thoroughly addressed. Describe your theme in one sentence.
Writing can be a gruelling process to get started, but once you get going, the health benefits are innumerable.
When you've worked out your theme, decide whether you want to share it as non-fiction or fiction. As I planned to publish my work, I chose to relay my theme through fiction. Although my work would be based on real experiences, I was more comfortable about sharing my message in a way that didn't involve revealing the stories of other real people as they crossed into my own.
Next up is character development. Who will star in your story? What are they like? What do they value and believe in? What are their strengths and weaknesses? Weaknesses make us interesting and offer possibilities for growth — they add twists to our story and give it depth. How will your character respond to challenges? How will your character learn from challenges? How will they help relay your theme to your readers? Who are your secondary characters and how will they contribute to your story?
Now it's time to develop your scenes. For a short story, each second or third paragraph may introduce a new scene and for a novel, it may be each chapter. There are no solid rules, but each scene should have a conflict and resolution. Ask yourself what scenes you need in order to relay your theme and how each scene will contribute to how you choose to conclude your story. Also ask: how will your characters bring each scene to life?
Writing can be a gruelling process to get started, but once you get going, the health benefits are innumerable. Author Laini Taylor advises new writers, "Be an unstoppable force. Write with an imaginary machete strapped to your thigh. This is not wishy-washy, polite, drinking-tea-with-your-pinkie-sticking-out stuff. It's who you want to be, your most powerful self."
Still can't get your imagination flowing? I did most of my creative thinking while on morning walks and solo cross-country ski trips. Before writing a scene, I'd go for a walk or ski and think it through. The Norwegians have an excellent word for this process, tankegang, that is used to describe train of thought, and translates more literally as thought walking. So, grab a pad and pen and lykke til med tankegangen!


Slayer spokeswoman Heidi Robinson-Fitzgerald said he died on Thursday morning of liver failure at a Los Angeles hospital with his wife, Kathy, by his side.
The guitarist had recently begun writing songs with the band in anticipation of recording a new album later this year.
He had been slowly recovering from what was believed to be a spider bite that nearly cost him his arm after he failed to seek immediate treatment.
"The music industry has lost a true trailblazer, and our deepest sympathies go out to his family, his bandmates and fans around the world who mourn his untimely passing," said Neil Portnow, president of the Recording Academy, in a statement.
Ms Robinson-Fitzgerald said that it is believed the spider bite contributed to the failure of Hanneman's liver, but it is unclear whether a post-mortem examination will be scheduled.
"Jeff Hanneman will always be a metal god," rocker Andrew WK posted on Twitter.
Hanneman co-founded the thrash metal pioneers in Huntington Beach, California, in 1982.


Liberty National Insurance Company is founded.
Liberty National Insurance Holding Company is formed.
Corporate reorganization makes LNIHC LNIC's parent.
Company acquires United American Insurance Company and Waddell & Reed.
Torchmark buys Family Life Insurance Company.
American Income Life Insurance Company enters Torchmark fold.
Family Life and Waddell & Reed are spun off.
Torchmark Corporation is an insurance and diversified financial services holding company. Most of the company's history involves a single corporate entity, Liberty National Insurance Holding Co., but in the 1980s the company entered a period of aggressive acquisition. By 1993, Torchmark controlled ten principal subsidiaries, branching out into individual life and health insurance; funeral, fire, and property insurance; financial planning; mutual funds; and investment management services. After a period of consolidation in the 1990s culminating in its decision to spin off two of its subsidiaries in 1998, the company narrowed its focus to the provision of life and health insurance products along with annuities, through its various divisions. The company also planned on continuing to offer financial planning services in conjunction with one of its former subsidiaries, Waddell & Reed.
The company's roots extend back to the turn of the 20th century, when the Heralds of Liberty was incorporated in Huntsville, Alabama. Although the entity purported to be a fraternal benefit society, it was actually a front for another company, headquartered in Philadelphia. The fraternal charter limited the Alabama Insurance Department's ability to oversee the Heralds of Liberty, enabling the parent to circumvent state insurance regulations. The parent company's officers used a variety of schemes to embezzle funds from the fraternity. The officers sold it worthless bonds, borrowed money on insufficient collateral, and had the Heralds make 'payments' to the parent. After 20 years of these illicit practices resulted in a backlog of unpaid claims, the Alabama Insurance Department took over the fraternity in June 1921.
The state agency assigned deputy insurance commissioner Robert Park Davison to the case. He proceeded to 'clean house' at the Heralds of Liberty. He forced all of the fraternity's officers and directors to resign and was made 'Supreme Commander' of the group. Frank Park Samford, Davison's colleague and cousin, was elected 'Supreme Recorder.' The unusual titles reflected the group's origins as a secret society. Davison and Samford went to the parent's headquarters in Philadelphia to begin reformation of the Heralds of Liberty. They found that the group was insolvent: unpaid claims amounted to $80,000, but the firm held only $1,410 in cash. The Heralds had no reserves, and premiums on the policies that existed were insufficient to meet financial demands. Davison and Samford discovered that the only policy the Heralds had sold was a lottery-type plan, or 'Joint Life Distribution Plan.' The scheme divided policyholders into classes by age. When a policyholder died, his beneficiary and the holder of the lowest certificate number in each class were both paid. Although the Heralds had tried to eliminate these policies through exchanges and introduction of new insurance plans, the parent company was dependent on this business for financial support and was compelled by the nature of the plan to continue to place new policies in the existing classes. It took the new officers until the mid-1930s to rid the company of these policies.
Davison and Samford worked during the 1920s to raise premiums, sell legal life insurance policies based on an adequate reserve, pay past-due claims, and build up a team of trustworthy agents. By 1927, the year the headquarters of the reformed company moved to Birmingham, Alabama, it had 26 employees and one new officer, an assistant secretary. To build up a reserve fund, Davison and Samford made the company's first stock offering in 1929 under its new name, Liberty National Life Insurance Co. Many officers and agents borrowed money to purchase shares of the $325,000 offering. The stock offering was supplemented with an additional assessment on Heralds of Liberty policyholders. Liberty National's officers feared that many clients would cancel their policies, but by July 1929 the company appeared to have endured its transformation into a legitimate insurer.
Disaster struck again when the stock market crashed that year. Many of those who had borrowed to capitalize the new company were stuck with debts that exceeded the value of their collateral. To make matters worse, the cash generated by the initial stock issue had been deposited with the Southern Bank and Trust Company as trustee and, before Liberty National had a chance to invest, it became apparent that the money could not be withdrawn without breaking the bank. Unlike many other banks during this crisis, Southern managed to stay open, and Liberty National was able to withdraw its funds in small increments over the next few months.
Liberty National struggled over the next five years to endure the Great Depression. Income from premiums declined as customers were forced to cancel their policies, and losses were sustained when banks failed and debtors defaulted on their bonds. Cost-cutting helped the company survive losses during the depression, and Liberty National even invested $95,000 to acquire the distribution system of a failing competitor. Circumstances compelled Liberty to use creative financing to remain solvent in the early years of the decade. In 1931 the company purchased a 70 percent interest in a headquarters building, then claimed it as an asset to maintain an adequate surplus. Davison and Samford even offered to surrender some of their stock to the company in 1932 to subsidize Liberty National's surplus, but that drastic step was not necessary. In fact, Liberty National paid its first cash dividend the following year. The insurance company's officers perceived that its shareholders doubted the continued viability of Liberty National and felt that the $21,000 dividend would restore investor confidence. That first payment started a custom that was followed every year in the company's history.
When Davison died in 1934, Samford was elected president and chief executive officer, more traditional administrative titles than 'Supreme Commander.' Liberty National enjoyed a period of growth and prosperity after that year and worked to build a dependable base of financial strength. Innovative policies helped the company compete successfully with its older and larger rivals. Liberty National made its first acquisition in 1944 through an interesting series of events. Late in 1943, Rufus Lackey, the principal stockholder of the Brown-Service Insurance Company, offered to sell his share of the Alabama insurer to Liberty National for $5 million, provided the transaction was completed by the end of the year. Liberty National had the will, but neither the cash nor the borrowing power to make the acquisition on such short notice. Samford and the company's general counsel secured personal loans with their Liberty National stock as collateral, purchased the stock themselves, and Brown-Service merged with Liberty National in 1944.
Brown-Service, a successful regional company, specialized in burial insurance plans. Liberty National utilized the subsidiary's large agency force to accomplish the greatest market penetration ever achieved by a life insurance company. Although Liberty National later discontinued the sale of burial insurance policies, the plan provided substantial savings to many citizens of Alabama and helped Liberty National build a highly efficient and profitable operation. In the 1960s, more than 80 percent of white Alabamans held Brown-Service policies. Even as late as the mid-1980s, almost half of the people who died in Alabama each year were insured under a Brown-Service policy.
Liberty National progressed steadily after 1945. The company made several relatively minor acquisitions, expanded geographically, and introduced numerous new insurance products. Beginning in 1952, the company began recording consecutive annual increases in both earnings and dividends that went unmatched by any other member of the New York Stock Exchange.
In 1958 Liberty National altered Birmingham's skyline by placing a one-fifth-sized replica of the Statue of Liberty atop its Birmingham headquarters. During the 1950s and 1960s, the insurer grew to become America's second largest publicly owned provider of so-called industrial insurance. This type of policy was renewed weekly and had been discontinued by most other major insurers, but Liberty National was reluctant to abandon these policies, which were popular with the company's rural customers. By the end of the 1960s, it ranked eighteenth in regular coverage and had expanded its geographical service area to include Georgia, Florida, Tennessee, and California. In 1968 Liberty National sold more than $1 billion in new policies for the first time.
Frank P. Samford, Jr., replaced his father as president and chief executive officer of Liberty National in 1967. He served in that position until 1985. The younger Samford brought Liberty National's policyholders more modern coverage. In the late 1960s, for example, the company introduced an estate plan and a special program for college students. The company's agents continued to take a very personal approach to life insurance, however. In 1975 its 2,500 agents still sold monthly life insurance door to door. Other, more urban, companies had abandoned these low-premium policies, but Liberty National continued to earn profit margins of 15 percent on the old-style coverage.
In 1979 Liberty National undertook an agenda of expansion and diversification through acquisition. Prior to that time, most of the company's investments were concentrated in mortgages, bonds, and a limited number of stocks, but by the mid-1980s, the company had grown from a regional life insurance firm into a diversified national insurance and financial services corporation. From 1980 to 1982, the company spent more than half a billion dollars to purchase several insurance and investment businesses. In 1980 the company bought Globe Life and Accident Insurance Company. Headquartered in Oklahoma City, Globe was founded in 1951 by John Singletary and Ralph Reese. Although the company was established with borrowed money, it had grown into a consistently profitable firm through the use of innovative marketing techniques such as direct mail. When Singletary died in 1977, Ronald K. Richey was elected president and CEO. In 1979 the company underwent a crisis when the executor of Singletary's estate sought to sell his 36 percent share. Liberty National purchased the company in a friendly takeover and made Richey a director of the parent. He succeeded Samford as president and CEO in 1986.
The year 1979 also saw the creation of the Liberty National Insurance Holding Company, which became the parent company of all of Liberty National's holdings following a corporate reorganization in 1980. The new entity made two major acquisitions in 1981: Continental Investment Corporation and United American Insurance Company of Dallas. Continental owned Waddell & Reed (W & R) and United Investors Life Insurance Company, two businesses that would become primary subsidiaries of Liberty National. W & R was created as a sales and distribution division for United Mutual Funds and was named for the fund's founders, Chauncey Waddell and Cameron Reed. United Funds became the first mutual fund group to be registered under the Investment Company Act of 1940, the legislation that brought funds under the jurisdiction of the Securities and Exchange Commission.
Waddell & Reed (W & R) hoped their group of mutual funds would make it easier for middle-income Americans to participate in the investing process. United Investors Life Insurance Company was created as an outgrowth of W & R in 1961. Its term insurance product soon accounted for a major part of Continental Investment Company's income. Problems in the national economy and the stock market, as well as difficulties stemming from Continental's ownership of Waddell & Reed, combined to force W & R into bankruptcy reorganization in the 1970s. The firm emerged from the crisis with new leadership and new products: financial planning seminars and services. By the early 1980s, W & R was a leading American financial planner. Liberty National purchased W & R's parent, Continental Investment Corporation, for $155 million in 1981.
The United American Insurance Company of Dallas, Liberty National's other major acquisition of 1981, was founded in 1947 by Casey Dunlap and Russ Donovan. This company had pioneered the employment of independent health insurance agents in the mid-1950s. It parlayed this new sales system into a nationwide system that extended into Canada by the time it was acquired by Liberty National for $138 million.
Liberty National's expansion into mutual funds, health insurance, and financial services rendered its formal name, Liberty National Insurance Holding Co., too limiting. The company adopted the name Torchmark Corporation in 1982. Torchmark combined the Statue of Liberty's torch and the word 'hallmark' to form a unique name that drew upon the company's long history, yet reflected its new components.
While many other insurance providers were lured into the high-return, high-risk junk bond and commercial real estate markets of the 1980s, Torchmark maintained three-fourths of its invested assets in reliable, government-guaranteed securities and short-term investments. When the bottom fell out of the junk bond and real estate markets in the late 1980s, Torchmark emerged unscathed. Torchmark's conservative investment strategies earned its primary subsidiaries the industry's highest ratings. The national scandals, however, did affect the company, in the form of increased contributions to the federal guaranty fund to bail out insolvent insurers.
The 1990s began promisingly for Torchmark, as the 1992 marked the company's forty-first consecutive year of growth in 1992. By then, its stock price had shot up an astronomical 1,675 percent from its 1980 levels. In 1994, however, the company experienced some setbacks. In large part as a result of some poorly performing investments and the fallout from several different legal disputes in Alabama stemming from alleged misconduct by agents at Liberty National Life Insurance Company (some involving age discrimination and punitive damages claims and others relating to an exchange of Liberty's cancer policies), the company's growth streak was snapped. Revenues declined to $1.875 billion from 1993's $2.177 billion and net income dropped $31 million from 1993's results, to $269 million.
The year 1994 also saw some alterations in the company's business balance, as Torchmark made the strategic decision to focus more heavily on its life insurance operations at the expense of its health insurance ones (life insurance products tended to have higher operating margins, build better assets, and be under less year-to-year growth pressure). Buoyed by the acquisition of American Family Life Insurance Company for $552 million in November of that year, Torchmark's life insurance revenues jumped 16 percent from 1993's levels, while the health insurance sector contracted by 31.2 percent over the same period.
The restructuring of 1994 helped stanch the decline in Torchmark's revenues, as 1995 sales climbed to $2.067 billion, recouping nearly all of the 1993-94 drop. Net income, however, declined nearly 47 percent from 1994&mdashø $143 million&mdash a result of poor growth in the Medicare supplemental insurance sector along with the company's litigation exposure, heavy debt burden from the American Family Life acquisition, and underperforming oil and gas investments. (The Medicare business had been slumping ever since federal legislation enacted in 1992 capped the commissions that vendors of such policies could charge.) To remedy this situation as best it could, Torchmark opted to divest itself of its holdings in the energy industry to streamline its operations and dedicate itself more effectively to its core insurance, mutual fund, and asset management businesses. In 1995, therefore, Torchmark liquidated its investments in Torch Energy Advisors, Inc. and the Black Warrior coal mine venture and sold off its holdings in Nuevo Energy Co. as well.
Torchmark's success continued in 1997. Revenues increased to $2.282 billion and net income rose to $324 million, as every sector of the company except its Medicare supplement products showed strong growth and administrative efficiencies reduced operating expenses. In March 1998, Torchmark acted further to reduce its indebtedness, when it made an initial public stock offering of 34 percent of its ownership interest in W & R. In November, Torchmark spun off the firm into a free-standing entity, though it continued to rely on its former subsidiary for some of its financial services operations. Torchmark also sold its Family Service Life subsidiary in June 1998 and used the proceeds to pay down debt and buy back some of its outstanding shares. Revenues for the year climbed to $2.158 billion, though net income dropped to $244 million in light of the company's debt restructuring and discharge.
These changes stood the company in good stead, as 1999's net income grew to $341 million. After weathering the storm of the mid-1990s, the company seemed well-positioned to meet the challenges of the 21st century.
Principal Subsidiaries: American Income Life Insurance Company; First United Life Insurance Company; Globe Life and Accident Insurance Company; Liberty National Life Insurance Company; United American Insurance Company; United Investors Life Insurance Company.
Principal Competitors: The Allstate Corporation; Citigroup Inc.; Conseco, Inc.; Liberty Mutual Insurance Companies; Metropolitan Life Insurance Company; Prudential Insurance Company of America; UNUMProvident; USAA.
'A Dying Business,' Forbes, April 15, 1975.
Frank, Robert, 'Torchmark To Buy American Income for $563.5 Million,' Wall Street Journal, September 16, 1994.
'Industrial Insurance Profitable Line for Liberty National Life,' Barron's, July 29, 1968.
Samford, Frank P., Jr., Torchmark Corporation: History of a New Company, Princeton, N.J.: Princeton University Press, 1985.
'Torchmark To Spin Off Waddell & Reed United Sometime in Early 1998,' Wall Street Journal, November 18, 1997.


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package com.example.socket.netty.stickpack2;

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		cause.printStackTrace();
		ctx.close();
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Browse > Home / Archive by category 'Characters / Bill Compton'
Behind the Scenes Photos From the True Blood Finale
See All the Photos for Jessica and Hoyt's Wedding:
With HBO's True Blood all dead and buried now, there isn't much else to do on a Sunday night but sit back and remember the show. Here we have some photos to keep you going for a while, along with a thank you to her fans, Jessica Hamby (Deborah Ann Woll) has posted her wedding photos for us to enjoy.
From Jessica's blog:
Having this blog as a record of my early memories in Bon Temps — it means the world to me. I've got one last thing to share before I sign off for good. Pictures from my wedding! Can you believe it? Hoyt and I are married! It all happened so fast but I'm glad we took the leap. It just feels right to be on this journey with him.
You've all felt like my family, and even though you couldn't be there to share the big day with me, I know you were all there in spirit.
By the way, my favorite picture is Hoyt sitting in Bill's chair looking very "stately." Perhaps he has a new calling — mayor? I may be overreaching, but I wouldn't mind being first lady of Bon Temps…
Forever yours,
Jessica Hamby-Fortenberry
As well as these official wedding photos, StephenMoyer.net has also released some images of the behind the scenes look at Jessica and Hoyt's Wedding, which you can view by clicking here.
Which are your fave pics? Personally, I love the group shot with everyone looking at the camera, except for Jason Stackhouse (Ryan Kwanten) – wonder what he's looking at?
Sources: Baby Vamp Jessica – Blog
StephenMoyer.net – Behind the Scenes Photos from True Blood's Filming
(Photo Credits: HBO Inc.)
Filed Under Bill Compton, Characters, Hoyt Fortenberry, Jessica Hamby, News · Leave a Comment
Show Runner Brian Buckner Defends the True Blood Finale
HBO's True Blood Wrapped up This Week with Season 7:
In the finale of HBO's long running vampire series, True Blood, it turned out Sookie Stackhouse (Anna Paquin) only needed to chose herself. While both Team Eric and Team Bill fans alike were disappointed Sookie ended up with some random stranger, for show runner, Brian Buckner, there was never a doubt:
The deal was we wanted Bill to be correct when he said that Sookie can have a normal life. The twist, of course, being that Sookie chose to keep her power and specialness and persevere despite his belief that she couldn't be OK without giving up her powers. Charlaine [Harris] took a lot of abuse for choosing Sam [Sam Trammell]. We felt like it was irrelevant who Sookie wound up with. What we wanted to know was that she was happy and living the life she wanted to lead. To introduce some other stranger in the last five minutes of the finale wouldn't have made a lot of sense. So, we made a choice to say it's "every man," it doesn't matter.
Besides Sookie's story being concluded, Bill's (Stephen Moyer) story also saw an ending – by way of the true death. Since the Season 7 finale, many people have been questioning whether this was the right decision to make on a show that has strongly drawn an allegory between vampires and the gay community. Brian addressed this matter with the following statement:
I've done some thinking about this one. What I will say to that is yes, True Blood is an allegory about otherness, but when you read a novel that is allegorical, it's usually about one character. To maintain allegorical correctness across the board with 20 characters is sometimes impossible. You have to pick a center. So, for us in this story line, I think it's obvious from the seven years that Sookie and Bill were not meant to be [in] true love forever. So now you've got to pick whose otherness you're going to protect. I think the allegory to be protected was Sookie's.
Then Brian had to justify the fact that for a series that's staple was sex and violence, there was surprisingly no nudity in the season finale:
I know our show has made its living on sex and gore and violence, but without story that all takes on the feeling of a snuff film. The director, Scott Winant, put in better words than I could. He said I get what you're doing here. If you're going to go bigger and bolder than you've ever been, then where are you going to go. And so the more surprising ending here is this intimate, small, beautiful story of these people in a small town… To me, you want to know that these people are going to be OK.
How well did you think Brian Buckner handled the True Blood finale? Let us know your thoughts by commenting below!
Sources: Vulture – True Blood Showrunner Brian Buckner: 'I'm Sort of Defiantly Proud of What We Did'
Yahoo's The Wrap – 'True Blood' Boss Brian Buckner Talks Finale, Says Eric and Pam Could Make a Good Spinoff
(Photo Credit: HBO Inc.)
Filed Under Bill Compton, Brian Buckner, Cast, Characters, Eric Northman, News, Season 7, Season 7 News, Sookie Stackhouse, Spoilers · 1 Comment
Stephen Moyer Uses WEEV to Answer True Blood Q & A
Check Out What Stephen Moyer Had to Say About the True Blood Finale:
Recently we mentioned that Stephen Moyer (who played Bill Compton on HBO's True Blood) would be on Twitter answering truebie questions after the True Blood finale. As well as answering a lot of questions the traditional way on Twitter, it turns out he used he very own, newly created app as well! WEEV was recently launched by Stephen Moyer at the San Diego Comic 2014 and is a handy way to ask and answer questions via video. As a result, fans had the opportunity to tune in on the night and WEEV questions directly to Stephen Moyer.
Many questions were asked of Stephen about the finale, and in particular, about Bill's death. People were also wondering about who the mysterious bearded guy that Sookie Stackhouse (Anna Paquin) ended up with. Stephen had this to say about it on Twitter:
@Ilovebs23 @ENews @TrueBloodHBO no one knows who he is..! Apart from the fact that he is a stunt man that was there that day….
— Stephen Moyer (@_smoyer) August 25, 2014
You can view his full Q & A by going to his Facebook page here.
To find out more about WEEV, please click here.
Sources: Stephen Moyer – Facebook page
Stephen Moyer – Twitter
WEEV – iTunes
(Photo Credit: Stephen Moyer/Weev)
Filed Under Bill Compton, Cast, Characters, News, Season 7, Season 7 News, Sookie Stackhouse, Spoilers, Stephen Moyer · Leave a Comment
VIDEO: True Blood Finale – Bill's Last Words to Jessica
Bill Compton Leaves a Message For His Progeny on Her Blog:
Over the last few seasons of HBO's True Blood, we have gotten a chance to see behind the scenes of some scenes and episodes thanks to serial blogger, Jessica Hamby (Deborah Ann Woll). Now we see the tides turned on her as her maker, Bill Compton (Stephen Moyer), who is dying from Hep-V, leaves his own video message to Jess on her computer.
Be warned, you will need tissues to watch this video! 😉
I wonder what Jessica's reaction will be when she sees it? Let us know your thoughts by commenting below.
Source: YouTube – True Blood Season 7: Jessica's Blog – A Father's Love (HBO)
Filed Under Bill Compton, Cast, Characters, Deborah Ann Woll, Episodes, Featured, Jessica Hamby, News, Season 7, Season 7 News, Spoilers, Stephen Moyer, Trailers and Ads, Videos · Leave a Comment
True Blood Finale: A Look Back on… The Cast Before True Blood
Check Out These Photo's of the True Blood Cast From BEFORE They Were on True Blood:
For many True Blood fans, the HBO vampire series introduced them to some amazing new actors. However, these actors weren't all fresh from acting school. Some, like Denis O'Hare (who played villain Russell Edgington) had starred in many, many TV shows and movies before they were introduced to truebies via True Blood.
So lets have a look at some of them via Mashable's recent list:
Before Anna Paquin was a telepathic waitress called Sookie Stackhouse, she won an Oscar when she was only a child in a movie called The Piano:
Stephen Moyer starred as Prouix the Architect in Quills alongside Geoffrey Rush and Kate Winslet long before he took on the role Bon Temps resident vampire Bill Compton:
Alexander Skaragard starred in many Swedish movies before starring as a male model called Meekus in Zoolander. However, his earliest role was that of Kalle Nubb in Åke och hans värld (Åke and His World). Of course, we all know him now as the 1000 year old viking vampire, Eric Northman:
Before Ryan Kwanten was a dimwitted southern deputy called Jason Stackhouse, he starred as Vinnie in a long time recurring role on Australia's Home and Away:
Rutina Wesley may be known as Tara Thornton, the bestie of Sookie who managed to die twice in True Blood, but before that she was Raya Green in How She Move:
And as for Kristin Bauer van Straten who plays vampire Pam? Well, she will forever go down in history as Jillian, the woman with man hands in Seinfeld:
You can view more images of the True Blood cast by clicking here.
Source: Mashable – 11 'True Blood' #TBT Photos That Definitely Don't Suck
(Photo Credits: MiraMax, Fox Searchlight, Filmhuset AS, Seven Network Australia, Sienna Films, Castle Rock Entertainment)
Filed Under Alexander Skarsgard, Anna Paquin, Bill Compton, Cast, Characters, Eric Northman, Jason Stackhouse, Kristin Bauer van Straten, News, Pamela Swynford De Beaufort, Rutina Wesley, Ryan Kwanten, Sookie Stackhouse, Stephen Moyer, Tara Thornton · Leave a Comment
True Blood Finale: A Look Back on… Villians
Who Would You Rate as the Best And Worst Villains from HBO's True Blood?
With HBO's True Blood fast coming to a close, I thought I'd rate the best and worst True Blood villains!
BEST: Sarah Newlin (Anna Camp). Over and over again Sarah has plagued the show, always bringing her warped sense of religious righteousness along with her for the ride. She even outlasted her husband, Steve Newlin (Michael McMillian) – no easy feat since he became a vampire in the end. However, it is her tenaciousness and lack of whiny little spinelessness her husband possessed that has made her the top villain we love to hate so much.
WORST: Mr Gus (Will Yun Lee). Mr. Gus had potential. Anyone who Eric Northman (Alexander Skarsgard) and his progeny, Pam (Kristin Bauer van Straten) are happy to side with have got to have something going for them after all. However, no one is really sure – Mr. Gus included – if he is even a bad guy. Sure he has the Yakuza backing him up but there just hasn't been enough plot development for us to really fear him.
BEST: Russell Edgington (Denis O'Hare). The guy ripped out a newsreaders beating heart while they were reading the news. On TV. With millions of people watching. Did Russell care? Oh no, he did not.
WORST: The Ifrit. Really HBO, a smoke monster? And now Bill (Stephen Moyer) is dreaming of Sookie (Anna Paquin) having babies that look suspiciously like mini-Ifrits. Oh HELL no!
BEST: Rene Lenier (Michael Raymond-James) Also known as Drew Marshall. Back in Season 1 of True Blood there was a real murder mystery going on. And, for fans of Charlaine Harris's books (on which True Blood is based), we all just sat back and watched and waited. We knew how shocked people would be when they worked out sexy Cajun Rene, hubby to waitress Arlene (Carrie Preston), was the one murdering cats and grandmothers alike.
WORST: Bill/Billith (Stephen Moyer). So Bill Compton drank the blood of Lilith (Jessica Clarke) and became Billith. Still not really sure how he un-became Billith, but that's okay. Maybe that's the real reason his Hep-V is so virulent now?
So who are your best and worst True Blood villains ever? Let us know by commenting below!
You can also check out TVLine's list of villains they love to hate to refresh your memory by clicking here.
Source: TVLine – True Blood's Best & Worst Villains
Filed Under Anna Camp, Bill Compton, Cast, Characters, Denis O'Hare, Jessica Clark, Lilith, Michael McMillian, Mr. Gus, News, Russell Edgington, Spoilers, Stephen Moyer, Supporting Cast, Supporting Characters, Will Yun Lee · Leave a Comment
True Blood Finale: A Look Back on… The Sex Scenes
What Would You Rate as the Best and Worst Sex Scenes in HBO's True Blood?
It's hard to pick just a few stand out sex scenes in HBO's True Blood – considering just how many have been dished up to us over the last seven years. But, after much research, here's my top six list:
BEST: Ginger (Tara Buck) and Eric Northman (Alexander Skarsgard) finally get it on atop Eric's throne in Fangtasia. Yep, I really didn't think this hook up in Season 7 would be as thoroughly entertaining as it turned out to be. I'm not sure if it was Ginger's undeniable glee, or the fact that she is just so damn excited that she is over and done with in a matter of seconds or if it's because it was very obviously a nod to the whole vampire fangirldom out there.
WORST: Bill Compton (Stephen Moyer) and Lorena Krasiki (Mariana Klaveno) get bendy in Season 3. This one was just plain weird. And it made me want to throw up in my mouth just a little. Even just thinking about Bill twisting Lorena's head all the way round as I am typing now is making me nauseous.
BEST: Jessica Hamby (Deborah Ann Woll) goes to visit Jason Stackhouse (Ryan Kwanten) in her red riding outfit. Yeah, I'm pretty sure there was a spike in red riding hood capes in 2012 after Jessica wore hers in Season 5.
WORST: Bill Compton (Stephen Moyer) claws his way out of the grave to have sex with Sookie Stackhouse (Anna Paquin). I am still surprised Sookie didn't need hospitalization after that romp. All that dirt, and in all the wrong places…
BEST: Jason Stackhouse has a sex dream about Eric Northman – while he's in church! Yep, I know after six months the effects of vampire blood on a human has probably worn off, but I'm glad to over look that for the fact that these two hooked up in Season 7.
WORST: Bon Temps has an orgy. Thank you very much Maryann Forrester (Michelle Forbes) for coming to Bon Temps in Season 2 and making me see things that I cannot unsee. Although, on a flip side to this one, we did get a hilarious scene with Jason posing as 'the god who came'…
What were your best and worst sex scenes from all the seasons of True Blood? Do you think there will be any to rival your faves in the True Blood finale? Let us know your thoughts by commenting below!
Alternatively, you can refresh your memory with E!Online's list of True Blood's craziest sex scenes by clicking here.
Source: E!Online – We Ranked True Blood's 12 Craziest Sex Scenes Ever, From Neck Twists to Incest
Filed Under Alexander Skarsgard, Anna Paquin, Bill Compton, Cast, Characters, Deborah Ann Woll, Eric Northman, Ginger, Jason Stackhouse, Jessica Hamby, Lorena, Mariana Klaveno, News, Ryan Kwanten, Season 7, Season 7 News, Sookie Stackhouse, Spoilers, Stephen Moyer, Supporting Cast, Supporting Characters, Tara Buck · Leave a Comment
True Blood Finale: A Look Back on… Then and Now
How Much Have Our Favorite True Blood Stars Changed From Season 1 to Season 7?
As we lead up to the final episode ever of HBO's True Blood, let's take a moment or two to look back over our fave True Blood characters who have managed to survive from Season 1 through to the Season 7 finale, Episode 10 (entitled Thank You) of the hit vampire show:
Sookie Stackhouse (Anna Paquin)
For a human, there's surprisingly little change for telepathic fairy Sookie:
Bill Compton (Stephen Moyer)
It seems consuming the blood of Lilith and then contracting Hep-V has actually improved Bill:
Alexander Skarsgard (Alexander Skarsgard)
He still smoulders, but we sure are glad Eric Northman ditched the long hair:
Pamela Swynford De Beaufort (Kristin Bauer van Straten)
While Pam has had to deal with many time eras via flashbacks, her everyday look has become more casual in Season 7 as opposed to Season 1:
Lafayette Reynolds (Nelsan Ellis)
While his predilection to head scarves have remained (except for that short time when he rocked a modern Mohawk), Lafayette's addiction to eyelashes and accessories has grown:
Sam Merlotte (Sam Trammell)
Sam is sporting a few more grey hairs and a less structured style than in Season 1:
Arlene Fowler (Carrie Preston)
Gone is the red wig for Arlene. She has also shortened her hair and gone with a darker, less sunset shade of red:
Ginger (Tara Buck)
I thought Ginger had changed more than this over the seven seasons. Besides less eye make up in Season 7, she is still as blonde as ever:
Andy Bellefleur (Chris Bauer)
It seems that Andy has gotten buff since Season 1:
Jason Stackhouse (Ryan Kwanten)
Look how young Jason is in Season 1! Still as chiseled as ever in Season 7 though:
Hoyt Fortenberry (Jim Parrack)
Hoyt is another character who has grown up over the seven seasons, but his darker, broodier Hoyt in Season 7 is certainly more appealing than the puppy that tagged along behind Jason in Season 1:
Jessica Hamby (Deborah Ann Woll)
In Season 1, Jessica Hamby was a 17 year old virgin. In Season 7 Jessica is also a 17 year old virgin, it's just she's a vampire now. While she has explored her dark side in previous seasons, Season 7 brings Jessica back to a more innocent version of Jess:
Lettie Mae (Adina Porter)
Lettie Mae has always been partial to a good floral frock (even when passed out drunk), but gone are the hats in Season 7:
Who do you think has changed the most over seven seasons of HBO's True Blood? Let us know in the comments below!
Filed Under Andy Bellefleur, Arlene Fowler, Bill Compton, Characters, Eric Northman, Ginger, Hoyt Fortenberry, Jason Stackhouse, Jessica Hamby, Lafayette Reynolds, Lettie Mae, News, Pamela Swynford De Beaufort, Sam Merlotte, Season 7 News, Sookie Stackhouse, Supporting Characters, Tara Thornton · Leave a Comment
Even Stephen Moyer Was Surprised Bill Said No to a Hep-V Cure!
Will Bill Die in the True Blood Season 7 Finale?
In Episode 9 (entitled Love is to Die) of HBO's True Blood, many fans were shocked to discover that even though Sookie Stackhouse (Anna Paquin) had been doing her very best to find a cure for Bill Compton's (Stephen Moyer) accelerated dose of Hep-V, he said no when the antidote was finally found inside the blood of Sarah Newlin (Anna Camp). It turns out even Stephen Moyer was a bit confused as to Bill's decision:
I had a slight issue with it, because I couldn't understand why he would go to the storeroom to Fangtasia and then say no. Ultimately, he goes because he wants to do right by Sookie. His decision to not turn around then and there is his going along with what Sookie has tried to make happen, and it's really only when he's right there that he thinks, 'no.'
But where will this leave Bill leading into the final episode of HBO's True Blood ever? Will Bill finally meet the true death? Stephen has this to say about Episode 10 (entitled Thank You):
At the end of [episode] nine, he has called Sookie and had the conversation with Eric, Eric's gone back, and he knows that he's going to talk to her. He's going to see her, because she deserves it and is owed it, to know what's been going on for him and why he is doing what he's doing. We sort of enter into the episode right there.
Right, so that's as clear as mud now! However, there is also this last piecel of information:
One of the things that Anna and I said — we had a dinner with Bucky [showrunner Brian Buckner] a year ago, before we had started filming, when they were just conceiving of this year, and quite frankly sat down with him and said, "We do not need in any way need you guys to try to tie up the Bill-Sookie love knot. If you don't feel like that's part of the show, we absolutely don't need for it to be that." I had said, "If you want that, we both do. If you see the show as Alcide [Joe Manganiello] and Sookie, that would be totally cool by us. If you see it as Eric [Alexander Skarsgard] and Sookie, that would be absolutely cool." I certainly didn't want to play an obvious part. One of the things we've been good at is surprising the audience, not always giving them what they want or expect. So for me, it's been interesting to sort of find that character again. He's been so many things. I think he's had the most difficult arc in many respects, trying to find that sustenance and feeling.
Well, your guess is now as good as mine as to where the end of True Blood is headed in the final hour. Let us know your theories by commenting below!
Source: The Hollywood Reporter – 'True Blood' Finale: Stephen Moyer on Whether to "Tie Up the Bill-Sookie Love Knot"
Filed Under Bill Compton, Cast, Characters, News, Season 7, Season 7 News, Spoilers, Stephen Moyer · Leave a Comment
True Blood's Deborah Ann Woll Hints at Bill's Fate
Will Bill Compton Survive the True Blood Finale?
With such little time until the very last episode of HBO's True Blood ever, there still seems such a long wait to discover whether Bill Compton (Stephen Moyer) lives or dies. Deborah Ann Woll, however, was recently interviewed by Zap2It about the True Blood Finale and let slip a few intriguing hints about Bill's future – or lack of it in Episode 10 (entitled Thank You). The first one occurs when she is asked about the evolution of her character, Jessica Hamby (who is the progeny of Bill):
By the end, and I think it's illustrated best in her relationship with Bill, she needed a strong father figure and she had that in Bill over the last six, seven years. Now that he's leaving — and there's more growing to do, certainly, in the last episode, and we'll see how that relationship pans out — but she asked to be released in [Episode] 9, and I think there's something in that that says, "I am a grown woman. I'm capable of taking care of myself. I need you to recognize that, and recognize my independence."
'Now that he's leaving' – as in dying? Or just moving towns? Sounds a bit ominous to me.
The second interesting snippet of information comes when Deborah is discussing why Jessica wanted to be released from Bill:
He chose to go through something that's going to be very painful for everyone around him, including himself. I don't know that Jessica wants to have to experience that. I think that's a very human and universal feeling. When someone you care about and love so deeply is going to be in pain, I think we get scared and we want to push it away. In that moment, she was so hurt and just thinking, "I can't sit and watch him turn black and blue and bleed and die. I just can't do it, and I need to be divorced from that." Without giving too much away, that's something that Jessica's going to have to confront in the finale in terms of how she's going to either choose or not to reconcile with Bill based on what he chooses to do with his time.
So Jessica will have to make a choice whether to reconcile with Bill? To me this sounds like Bill really will go through with his plan to let the Hep-V run it's course. Or will he be reprieved at the very last minute perhaps?
The third quote from Deborah comes when she discusses all those Bill flashbacks, what they all really mean and whether there is still the chance he might chose life over Hep-V:
He has room to change his mind. I would point out to people that we spent a lot of time this season looking at Bill's human life. There's a reason for that. I think there's a strong reason for why we've seen how much he loved his human family, how much he missed of them. If you think back to Lorena, she basically made him give them up. He lost so much when he became a vampire, and I think that's why we've seen him struggle so much with being one. I think Jessica is a part of his salvation in that a little bit. I think he loves her very dearly, and it was his chance to have a family in the way that he misses them, but I can understand Bill not really wanting to continue this — just for his own personal reasons, beyond the idea that maybe he's causing Sookie or Jessica or people pain. There's maybe more peace for him in death than there is in continuing to be a vampire, perhaps.
Hmmm… it really does sound like Bill definitely wants to die. But will he? Or is this just a very cleverly worded interview to make us truebies think Bill really is going to meet the true death?
Let us know your thoughts in this by commenting below!
You can view the entire Zap2It interview with Deborah Ann Woll by clicking here.
Source: Zap2It – 'True Blood' series finale: Jessica's story will 'end with Bill,' says Deborah Ann Woll
Filed Under Bill Compton, Cast, Characters, Deborah Ann Woll, Jessica Hamby, News, Season 7, Season 7 News, Spoilers · Leave a Comment

redpajama_set_name: RedPajamaCommonCrawl


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i2Coalition Awards David Snead the 2020 Ron Yokubaitis Internet Community Leadership Award
The Internet Infrastructure Coalition (i2Coalition) presents the Ron Yokubaitis Internet Community Leadership Award to an individual whose contributions to U.S. Internet policy have helped create a better internet through promoting privacy protections, an open Internet and continued innovation.
The winner for 2020 is i2Coalition Co-Founder and cPanel General Counsel David Snead.
Snead has provided advice and counsel to technology companies since 1995 beginning with a practice based on technology exports. Since 1999, his practice has focused exclusively on the Internet infrastructure industry. Since his practice began, he has worked in large firms, as in-house counsel, and as a solo practitioner. He co-founded i2Coalition at a time when the Internet community had little ability to stand up to lawmakers pursuing legislation like the Stop Online Piracy Act (SOPA), and has been a strong voice in Internet politics and policy since then.
Snead was presented the Ron Yokubaitis Internet Community Leadership Award in an online award ceremony on October 22, 2020, where he was joined by i2Coalition board members and i2Coalition co-founder and executive director Christian Dawson.
The Internet Infrastructure Coalition (i2Coalition) presents the Ron Yokubaitis Internet Community Leadership Award to an individual whose contributions to U…
Jane Shih, i2Coalition Vice-Chair and Deputy General Counsel for Endurance International Group, said, "Truly you are a role model for me and I have appreciated your ability to switch back and forth between understanding the technology but also being deeply steeped in how legislation works. You're my policy wonk superhero."
"[Snead] is our spirit guide when interacting with DC and the Hill. It was great to work with at i2C over the past few years," said Michele Neylon, i2Coalition Board Member and Co-founder, Owner and CEO of Blacknight. "It's always fun to hang out with him."
Graeme Bunton, i2Coalition Board Member and Head of Policy at Tucows, said, "My relationship with David has meant a lot to me especially as I was trying to find my feet and my voice within ICAAN and within i2C. David was always there with his kindness and dry sense of humor, and to provide some guidance."
Frank Stiff, i2Coalition Board Chair and President of Cheval Capital, said, "Over the last 15 years, we've seen how your guidance as an attorney has been instrumental in helping companies both very large and very small navigate their though both good and bad situations. Obviously, your co-founding of the i2C with Christian was an important step for our industry. Much more difficult and significant, however, has been all your work giving i2C the standing it has today as a knowledgeable, responsible, and influential group in Washington. A lot of people have contributed to that, but none more so than you. Through those contributions and others, you've helped our industry immeasurably for a long time to come."
Christian Dawson, the other co-founder of the i2Coalition, reflected on how they first worked together when Dawson was running web hosting company ServInt and Snead was his lawyer. It was there when they were first introduced to legislation that would be the precursor to PIPA and SOPA and that would present huge challenges to the industry and the Internet as a whole. Snead arranged a meeting for the both of them with Jayme White at US Sen. Ron Wyden's office to talk about the bill. "We asked Jayme White what to do about this, and he said 'Get more of you'. That was his advice to us."
"Get more of you" was the central idea behind this Internet infrastructure coalition.
Melinda Clem, i2Coalition Board Chair and Vice President, Strategy for Afilias, said, "[Snead's] story is the story of the i2Coalition. This is someone who saw a problem in the industry and stepped up, met the challenge, organized individuals, consolidated voices.
"He continues to play this role where he helps organizations regardless of their size all meet our goals, all have a unified voice, and to help our sector."
In receiving the award, Snead said, "The work that I've done at i2Coaltion has been among the most rewarding of my life."
i2Coalition Releases 2022 Annual Report: 10 Years of Advocacy and Counting
The 2022 i2Coalition Annual Report shares our key achievements as the leading voice of those who build the Internet. This year we celebrated ten years of advocacy: the i2Coalition has been protecting this vital industry since 2012 by promoting the adoption of effective public policies that support continued growth and innovation. In the document below, […]
Announcements, Uncategorized, US Policy
Save the Date: 2023 i2Coalition Congressional Fly-In
On June 8-9, 2023, i2Coalition will once again welcome industry colleagues to Washington, D.C. for an opportunity to engage legislators in conversation about the significant impact Internet policy issues have on members' businesses. The 2022 edition of the Fly-In was unique in that it provided an opportunity for members to celebrate i2Coalition's accomplishments from its […]
Announcements, Internet Governance, Internet Safety, Premium Content, Privacy
Members-Only Workshop on Abuse Reporting — A Discussion with Member Experts: Nov 1
The i2Coalition's Insights and Innovation Committee's is hosting a "Members-Only Workshop on Abuse Reporting — A Discussion with Member Experts" on November 1st at 14:00 UTC/10:00 AM Eastern Time. This session will feature frank and open discussion from within our membership on what work is being done and how our industry can engage with that […]
Follow @i2coalition


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Yankees vs. Red Sox: Stats, Top Highlights from MLB's 1st Game in London
The New York Yankees took a 17-6 lead after five innings and held off a late rally as they defeated the Boston Red Sox 17-13 at London Stadium on Saturday. The first regular-season MLB game played in Europe resembled a slow-pitch softball matchup as …Read more
Yankees vs Red Sox Stats Top Highlights from MLBs 1st Game in London
The New York Yankees took a 17-6 lead after five innings and held off a late rally as they defeated the Boston Red Sox 17-13 at New Yorks first post-London game will be at the New York
MLB London Series Top Yankees vs Red Sox moments in the rivalrys recent history
The Boston Red Sox and New York Yankees will square off across the pond this weekend marking the first time Major League Baseball regular season games are played in London two-game series overseas heres a look at five of the best Yankees vs
What in the name of the queen was going on during that 17-13 Yankees-Red Sox game
On Saturday afternoon stateside anyway the Yankees and Red Sox officially brought Major League Baseball to a new continent with the first of two games in London perfect game attempt in 2001 He has a startling memory of World Series highlights
Game times announced for Red Sox-Yankees series in London
The historic regular-season series between the New York Yankees and the World Series champion Boston Red Sox marks baseballs first games ever played in Europe and originates from of that game I felt like I was able to get on top of that and just
Aaron Hicks hits MLBs 1st European home run
LONDON Baseballs first home run on European soil The shot came during a 27-minute top of the first inning Saturday night when the New York Yankees batted around against the Boston Red Sox
Yankees and Red Sox to play in London in 2019 Ten things to know
Heres Red Sox principal owner John Henry For several years the Red Sox and Yankees have discussed playing in London as the first-ever Major League Baseball regular season game in Europe Its also the first time the Red Sox and Yankees have played
Published in United States
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I've been thinking I really should blog. I've been feeling incredibly inspired the past few weeks and so I've been thinking that I should really come up with something clever and blog about it. I like to write with a clear desk and a clean studio. So before I sit down to blog I tackle the piles on my desk: the mail, the receipts, the left messages, the fade-in/fade-out times for the recital album, the booster to add to the program journal, the fundraiser results, Gamzatti's variation that needs to be downloaded for Stephanie, the fall 2013 scholarship donation, emails, check deposits via cell phone app (thank you technology), the elastic-ripped pointe shoe that need sewing, placement assessments for our two new level 1's, teen yoga flyers...… wait, what was I just doing? Oh yeah, scrubbing bubbling the bathroom. …Excuse me for a moment, I was just about to clean the bathroom. I grab my coffee and to dump in the sink, grab the scrubbing bubbles, notice a flyaway loose from my bun, switch coffee to elbow pit, grab hairspray from dance bag, spray scrubbing bubbles into hair.
the artwork makes it OK. It'd be better if the artists' hair were neatly sprayed back into a ballet bun. But nonetheless, OK. Thank you for adding to our gallery.


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(Source: CALB)
CALB Becomes First Battery Manufacturer Listed in Hong Kong
Oct 07, 2022, 11:15am 2022/10/07 11:17:52 Pandaily
China Aviation Lithium Battery Co., Ltd. (CALB) officially listed on the main board of the Hong Kong Stock Exchange under the symbol of "3931" on October 6, becoming the first battery company listed on the exchange. However, the company's shares fell 1.45% to close at HK $37.45, lower than the issue price of HK $38.
Listed companies in the power battery chain such as Tianqi Lithium, Han's Laser Technology, Jingce Electronic, Shengtun Mining and XPeng participated in the IPO as cornerstone investors.
Founded in 2015, CALB is mainly engaged in the design, development, production and sales of batteries and energy storage system products. For its power battery division, it mainly sells battery cells, modules and packs for new energy vehicles. In the energy storage system product segment, its products are targeted for use in power stations, power grid enterprises, and data centers.
Since its establishment, CALB has received investment from Sequoia China, Firstred Capital, CoStone Capital, Loyal Valley Capital, Warburg Pincus, GAC Capital, and Hubei Xiaomi Changjiang Industrial Investment Fund Partnership.
From 2019 to 2021, the sales volume of CALB's batteries increased from 1.62GWh to 9.31GWh at a compound annual growth rate (CAGR) of 139.7%, while sales of energy storage systems increased from 0.2GWh to 0.67GWh at a CAGR of 83.0%.
According to Frost & Sullivan, the top three battery companies in China by installed capacity in 2021 were CATL, BYD, and CALB, with market shares of 52.1%, 16.2% and 5.9%. In terms of installations in the first quarter of 2022, these companies have remained in the top three, with market shares of 49.8%, 20.3% and 8.2%, respectively.
At present, CALB has set up industrial bases in Changzhou, Xiamen, Chengdu and other cities, and is planning to reach a capacity of 500GWh by 2025. About HK $7.891 billion of the proceeds raised by the IPO will be used to pay for part of the company's construction of a 95GWh production line for batteries and energy storage systems.
At present, CALB's products have been delivered to GAC Aion, Changan, Geely, Leapmotor, XPeng and other well-known domestic automobile manufacturers. In terms of financial data, in the first quarter of 2022, CALB's revenue increased 266.6% to 3.897 billion yuan ($547 million) from 1.063 billion yuan in the same period of 2021.
SEE ALSO: NIO's New Brand Offshoot to Adopt CALB Battery
It should be noted that last year, CATL sued CALB for patent infringement, involving claims worth about 640 million yuan. In response, Wang Xiaoqiang, Vice President of CALB, said in an interview that the patent infringement lawsuit filed by CATL had not materially affected the listing of CALB.
Research published by BOC International (China) Co., Ltd. showed that, with the rapid development of the battery industry, some second-line enterprises have increased research and development investment while developing more advanced battery technology with the aim to integrate themselves into the supply chain of automakers. They are expected to further improve their market share amid the huge potential of the market.
Tags Battery | BYD | CALB | CATL | electric vehicle | Hong Kong IPO
Anhui Project of HK-Listed Battery Firm CALB Completes First Product Batch
Chinese battery manufacturer CALB, which was recently listed on the Hong Kong Stock Exchange, announced on October 8 that the first batch of products from a project worth 24.8 billion yuan ($3.49 billion) in Hefei, Anhui Province, have rolled off the production line.
ESG Oct 09 October 9, 2022
Chinese Second- and Third-Tier Battery Firms Look to Gain Market Share
Chinese second- and third-tier battery manufacturers have been ramping up production and accelerating their overseas presence this year, vying for market share alongside first-tier players such as CATL and BYD.
ESG Sep 22 September 22, 2022
CATL Subsidiary Plans New Lithium Salt Project
A subsidiary of Chinese leading battery maker CATL has planned a new lithium salt project that could house as much as 110,000 tons in Longyan City, Fujian Province.
BYD Surpasses CATL in Loading Capacity of Lithium Iron Phosphate Batteries
The China Automotive Battery Innovation Alliance released power battery data for July on August 11. During the month, China produced a total of 47.2 GWh of power batteries, up 172.2% year-on-year and 14.4% quarter-on-quarter.