text:
Adam McDonald
Middle C
"Alma could tell there was something he wanted to say. He didn't speak it, clearly, nor did he sign it.
"He played it."
The cameras clicked and clacked in quick succession. Lucas rubbed his eyes after the flashes of light. Unfortunately, his hand movements gave way to an even greater barrage of photos. "He's signing! Get the camera over here!" said a presumably camera-less reporter. "He's signing!"
"They can't possibly think that my son was signing just now can they?" Alma asked.
Standing next to her was Martha Weisgard, the representative from the Resolute Mute Children's Organization. "Presumably," she began. "I think one of your husband's aides briefed them before they came in about his stagnated acquisition."
"Well he should have just said 'Lucas can't sign' slowly and succinctly so they could understand it."
One of the reporters, a short young boy—a recent college grad, or an intern, Alma figured—approached them. "Mam, is the mayor going to be here soon? I've gotten some really great solo shots of the boy, but we really want a picture of him and his son with Ms. Weisgard here."
Alma gave him the fake laugh she had developed for public events, "Oh I just never know with him. I'm sure he'll be here soon."
The boy muttered a thank you and found a wall to sit against.
"Well I was hoping to thank your husband in person," Martha said, smiling at Alma. A real smile? Could be. "I really appreciate what he is doing here," Martha continued. "We don't get a lot of government support, or really any at all. To have a part of the city budget—even a small one is a huge help."
Alma smiled back. "I think he is trying to help Lucas really… I hope this isn't to blunt, but since the therapist is getting nowhere with helping him want to learn to sign—"
"We are your next attempt."
Martha paused for a moment and tapped her pen against the clipboard in her arm. "I'm not really one of our coaches, but I can assure you that we'd be happy to have Lucas try our program. Can I ask… was there something that happened to his voice or…?"
"He was born this way. The very afternoon we took him home from the hospital I started looking up sign language on the internet. No matter how much I tried Lucas wouldn't pick it up though. Kurt though… he hasn't really…" Alma rubbed her forehead. She looked to Lucas who stood in the center of the room. He stood by himself. A single boy against an army of cameras. He was wearing a nice button up shirt that she had bought him that morning and a clip-on tie. Out of his pocket he pulled out a small toy soldier and set it down on the ground. Lucas considered it and adjusted it so the toy was just so.
On the other side of the room a door opened. Kurt walked in bearing his stupid fake smile. Lucas jumped up and down and looked back and forth between Kurt and Alma. Alma patted the curls of her hair and took in a deep breath.
From the far reaches of the house echoed the off-key melody of what sounded like a dying hippopotamus. Alma and Lucas had just returned from another session with Lucas' therapist. Lucas looked at Alma and exhaled a hefty amount of air from his nose as they entered the front door. She let go of his hand and put her fingers to her mouth while performing a smile, signing laughter. "Like this Lucas, laughter."
Lucas just stared at her attentively.
"Though I don't particularly see what is so funny—Kurt! Kurt is that you?"
The rumpus came to an abrupt halt. "In the living room!"
Alma led Lucas by the hand to their living room where her husband had replaced their couch and armchair with a medium sized piano. The couch and armchair still took residence in the living room however; they had just been shoved to the center. It was a mess.
"I bought a piano."
"You bought… what why? Kurt…" She looked to Lucas. "Go play in your room—Kurt, we don't have room for a piano. You can't even play. What are we going to do with a piano?"
"I got a great deal on it."
"I can play, see." Kurt played—producing the sound of what could only be compared to a constipated monkey. "Not bad," he said proudly.
Alma combed her hair with her hands, closing her eyes. Once her fingers reached the curls of her hair, she stopped so as not to ruin it. "Kurt," she said looking at him, though he did not look back. "We don't have room for this, and we both know that you are gonna play this for a week then never touch it again."
He turned to her quickly, slamming his elbow on the lower keys. The boom of the piano matched his fury. "We don't know that. You think that. This is something I bought for me, with my own money… I thought it would be a nice family thing to have, I play for us on Christmas Eve like my dad did."
"Kurt it's May…"
"Then I have tons of time to practice… Why don't you want me to have this?"
"Why didn't you tell me you wanted one?"
His fist collided with the top of the piano, which seemed to hurt his hand more than the instrument. His nostrils fumed with fiery steam as he thought about what to say. Kurt looked to the ground and then back at Alma. "Fine! I'll bring it back. But I don't even think they will take it back so I'll just have to take it to the dump where nobody can use it." He turned to the piano. "I had some interns help me haul this in so I'll have to move it myself since you obviously won't—Lucas, hey bud, uh."
Lucas was sitting on the cushioned piano bench staring at the keys. He poked one with his index finger.
"Buddy," Kurt continued, "Mom won't let us have this so we gotta move this out of here right now okay?"
"Nice, Kurt."
Lucas made eye contact with his father, then looked at Alma. She couldn't see whatever he was hiding behind those eyes. But Alma could tell there was something he wanted to say. He didn't speak it, clearly, nor did he sign it.
It was remarkable. Keeping his full gaze split between his parents he placed his hands on the keys and constructed a simple tune. The tune played acceptance and joy; the image of a little girl tugging at her mother's skirts and pointing at a giant lollipop in the store window warped its way out of the keys as Lucas pressed them. Light and desire danced in the air, unnamed notes swirled around the ceiling fan.
Kurt turned to Alma and shrugged but kept a haughty smile. Alma ignored him. Any distain Alma would have held toward Kurt was overshadowed by Lucas' development.
Alma placed a hand on Lucas' shoulder. She smiled at him. A single tear fell from her eye as she watched the pictures being played from the piano.
That weekend he sat there practicing. That was pretty much all he did. Lucas slept on the couch and ate on the piano. He only left to use the bathroom.
Kurt had bought him a beginner's piano manual. Lucas wasn't very interested in the songs though. He was more interested in how the notes sounded with one another. Which sequences of keys played what.
In her hands Alma carried a plate with a peanut butter and jelly sandwich, a juice box, and a banana on it. She placed it on a free space atop the piano and began to head back to the kitchen when she heard a very high ding.
Lucas was looking at her, smiling. His fingers hesitated for a moment but then constructed a series of notes to create a symphonic man in a top hat. The man bounced between low octaves and high octaves; he removed his hat and bowed graciously.
"Well, you are very welcome Lucas." Alma resisted the urge to sign her words as she spoke them. "Hey Lucas?"
The man stood back up and fitted the hat back upon his head.
"How does it work? Exactly? Could you show me?"
Alma sat down next to Lucas. He stared at the keys for a while, working something out in his head. Twice he put his fingers down to play but then removed them.
With her own hand, she tried to play a key. It was very high pitched, and she recoiled her fingers in embarrassment from the sound. Lucas grabbed her hand and placed her thumb on a key in the center of the keyboard. It was labeled "C" with a sticker. That key and the four keys to the right of it, as well as two keys to the left of it were labeled alphabetically. She pressed the key and it played a firm note. Not too high, not too low.
Alma took her hand away again. "I think I'll leave it to you."
Lucas put his hands to the keys once more and tried a tune. A melodic puppy running around in circles on the rug behind him. She yipped and yapped and played and grew tired. She plopped herself down on the rug and a larger dog came and picked her up by the scruff of her neck. She was taken away and placed to rest and nuzzle into the chest of the larger dog.
Then Lucas leaned his head on Alma's shoulder.
"Mrs. Paulson?"
"Speaking." Alma balanced the phone between her shoulder and ear while she poured cupcake batter into an army of muffin pans.
"Good afternoon! I tried to call your husband but he's a hard man to get in contact with. Unless of course I'm a campaign donor." The man on the phone gave a chuckle. "Kidding."
"Sorry, I'm with the Delano Public School District, Pete Hugh from your son's school. How are you doing this afternoon?"
Alma set down her bowl of batter and moved the phone away from her mouth. With her free hand she patted the curls of her hair. "Kurt!" she shouted, covering the phone with her hand.
"In a minute honey."
"My husband is here if you want him," she said. "I'm supposed to be helping him make cupcakes, but he seems to think me helping means that I'd just do the whole thing myself."
"Mam, actually uh, I can talk to you instead. It's concerning Lucas."
"Oh good, what? Does another teacher have a plan for how to 'help him get in touch with himself'?"
"No actually. But I do have a few ideas myself—"
"I don't want to hear it."
"Would it be possible for you to come in and meet with his teacher? Or your husband surely."
A shrill beep came from the oven. "Hold on." She grabbed the oven mitt from the center island of the kitchen and retrieved cupcakes. Alma opened the oven and pulled out the first muffin pan from the top rack. "Just tell me your pitch over the phone. Okay? We are a bit… I'm a bit busy right now."
Kurt entered the room dressed in his full suit attire. He stared at her feet, waiting for her to get off the phone. Kurt played with his red tie and brushed his tongue over his front teeth. Alma listened to the man on the phone but tried to cut up Kurt's expensive tie using her mind. The rest of her mental effort was spent trying not to fall apart as the man told her that Lucas had gotten into a fight at school. "Really?" she said to the man on the phone. "Well… fuck."
"Okay, okay. Thank you." She hung up. "Your son's a cliché," Alma said to Kurt.
"I feel like a fucking 50's housewife over here in my damn apron, making fucking cupcakes for a damn fundraiser, and I get a call from the damn school that Lucas got in a fight."
"Alma, what?"
"Our. Fucking. Son. Got in a fight at school. Three months since he started with that piano and he hasn't gotten any better. And what, let me guess, you're all dressed up in your suit because you got a call and you need to go into work, an urgent city matter… 'the town needs their mayor', and you're about to tell me that you need me to finish the cupcakes by myself which is bullshit to begin with because I'm already baking the goddamn cupcakes by myself."
"You know what, yes. I do need to go to work. That's what happens. The town does need their mayor."
A door slammed. Alma hadn't even heard it open. "That's probably our misunderstood son come home with a black eye from his fight. You gonna leave me to deal with that on my own too?"
"Yea—" he began to say but was interrupted by a giant musically generated polar bear that charged into the kitchen from the living room. The bear was a low octave and head-butted the still-open oven door. It spat on the cupcakes and growled in Alma's face. She could hear its rancid breath. In one swoop the bear rhythmically bit both of their arms and pulled them into the living room.
Lucas was channeling the bear with the piano. He stared at them passionately, never letting his fingers leave the ivory keys. His skill was introductory at best, but his music was crystal clear. There was anger and frustration and a polar bear that kept bashing its head against the wall.
"Lucas, honey," Alma began. "I'm sorry that your father upset you,"
"Hey!" said Kurt.
The polar bear took a shit on the couch.
"Both of us, then. We don't like scaring you like this, but sometimes your father and I don't get along too well."
"Hey Bucko, you got a real shiner there on your cheek," said Kurt. "Do you wanna…" Kurt looked uneasy. He took a moment, presumably to consider his words. "You wanna talk about it?"
Lucas stopped his movement along the keys for a beat, then returned to the music. The audial polar bear who had been napping on the couch split in two, transforming into a bull and a man with a red blanket. The bull took a seat, but the man kept trying to cover the bull's eyes with his blanket as he tap-danced. The bull tried moving but the man did it again. So the song bull skewered the man with his horn.
"Well I'm sorry about that all, kids can be real jerks." Kurt paused to think. He made that stupid face where he sucked in his bottom lip. "Moms and dads can be real jerks too; I promise after the campaign things will go back to normal. You won't see me and your mother yelling at each other anymore, okay?"
The bull barfed up a song of half-digested cheese and pumpkin innards. Then Lucas slammed his fists against the keys and stood up with a jolt. He pushed his way past Kurt and, Alma noticed, made a point not to look Alma in the eyes as he stormed off to his bedroom.
The cupcakes were decorated, boxed, and ready to be handed out. Alma had worn her nicest white polka-dotted light blue dress that she wore at every one of these functions. She curled her hair the way Kurt liked, or at least the way he used to like. Kurt hadn't made a single comment on it all day.
Which was an honest to god real insult. Alma figured she probably spent more time on her hair than on the damn cupcakes. She always took her time with her hair for these important events. She wore her hair this way on their wedding day.
He used to admire her hair and compliment her on it whenever she wore it in curls. His reasoning was that, "If I compliment you every time you wear it like that, I'm positively reinforcing that behavior, it's all psychology. I think. Point being is I'll get to see you looking damn nice in that hair-do more often, and you won't even realize it!"
"Except now you told me, so I know."
"Yeah I guess so."
Today he made no mention of it. Not that he was even bothering to talk to her. She expected it, him spending most of his time kissing up to all the old white businessmen who were in attendance. They all said the same thing to her: "Oh a free cupcake, huh? I don't mind if I do." They would do the little tickling motion with their fingers as they would pick up a cupcake. Before they would leave, they'd assure her that he'd win reelection. There would be no city without her husband. How great of a mayor he'd been, there is no doubt that the voters would see that. Blah blah blah blah blah.
Still she smiled and thanked them. Lucas would have smiled at them too, but he was spending most of his time hiding underneath the table.
Out of the ocean of fat suits emerged Kurt, covered in handshakes and dollar bills. He waved to her and smiled but she could tell it was that fake smile he'd sell to these donors. He approached her cupcake kiosk and said, "Hey there honey. Where's our guy?"
"Under the table."
"Oh." He wrapped his fingers around his belt loops and knelt down to look underneath the cheap tablecloth. "Hey there champ, you ready?"
"Kurt, he doesn't have to if he doesn't want to."
"Nonsense! He loves to play; he just has the jitters is all I'm sure. Come on Luey."
Kurt held Lucas in his arms.
"Lucas you don't have to do anything you don't want to."
"Hey and don't worry either," Kurt said. "All they will see is a cute kid playing the piano, there is no pressure."
Kurt hauled him up to the stage of the gym/auditorium. On the stage was a piano that belonged to the school. He sat Lucas down on the stool and then took hold of a microphone that was set up for him. "If I could just get everybody's attention!" Kurt said. The pitch of the microphone chimed slightly. "How are we all doing today?"
The businessmen slowed down their useless blabber and turned their heads toward the stage.
"I'd like to thank you all for coming here tonight, it means a lot to me and my family to see your support. Speaking of family, it gives me great pleasure to introduce to you my son Lucas. Give them a wave Lucas!" Lucas didn't give them a wave. "He's gonna play a little song he's been working on as a thank you for your continued support, from my family to yours." Kurt moved the microphone to the side. "Knock em' dead Luey."
Lucas scanned the crowd, only stopping when he found Alma's face, she noticed. Still right where he left her at the cupcake kiosk. Then he looked to Kurt who was giving him two enthusiastic thumbs up.
When his fingers merged with the keys it became apparent to Alma just how much Lucas was practicing. Though still quite rudimentary, his skill had improved by a significant margin. His music conjured a giant stone which was struck with a clang by a giant mallet. The crowd gasped and erupted into a flood "oohs." The stone on the stage then became two rocks and those rocks each became a high note ballerina with beautiful curly hair and a low octave soldier respectively. The harmonic soldier pretended to shoot at the sky and cower beneath his arms, while the ballerina danced, balancing all her weight on one foot.
As the ballerina twirled, she swung her leg through the air. Her leg swooped over the soldier, who only then took the time to notice her. When the soldier stood up, he got whapped in the gut by the ballerina's leg, an accident for which the ballerina sang a beautiful apology. As a reparation she taught the soldier to dance, and they danced together. Their dance was sweet, and it was filled with love. But it was also filled with sadness. The soldier kept thinking that they were about to be shot at and would try to cover the ballerina from an onslaught of rhythmic enemy fire. But nothing would be there.
They would continue to dance but no longer would they gaze into each other's eyes.
Alma looked at Kurt, who watched Lucas play with great pride. She considered how he looked at Lucas, and how she looked at Lucas. And all Lucas was looking at was the dance on the stage.
The soldier got dizzy from all the twirling and sat down so he could watch the ballerina dance. But when the ballerina danced, all the soldier did was fall asleep. And so… she stopped her dance.
Alma brushed her hands through her hair. She began to straighten it from the perfect curls that she had worked for hours that morning to create. She grabbed one of her cupcakes and took a huge bite out of it. She ate it while she listened as the ballerina tried desperately to wake the soldier up. The song was frantic and mad—there was energy to be felt and fires to fuel. But it was slow and tragic. A weeping note would drop out of each key as Lucas' fingers danced. Her hands tugged and pulled at her curls until they had come completely undone—all the while she was thinking to herself that she had heard this song before.
Written by Adam McDonald
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Justia Patents Gate Insulator Includes Material (including Air Or Vacuum) Other Than Sio 2US Patent Application for Transistor structures and methods for making the same Patent Application (Application #20030218221)
Transistor structures and methods for making the same
Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO or SnO2. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO or SnO2, the substantially insulating ZnO or SnO2 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.
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PRIORITY CLAIM
[0001] This application claims benefit of U.S. Provisional Application No. 60/382,696, filed May 21, 2002.
[0002] The present disclosure relates to transistor structures such as, for example, transparent transistors.
[0003] The microelectronics industry and research community is undertaking efforts to fabricate electronic devices (e.g., diodes and transistors) that are transparent to the portion of the electromagnetic spectrum that is visible to the human eye. Circuits made of such devices would offer unique opportunities for innovation or improvement of consumer-, automotive-, and military-electronics systems.
[0004] For example, active-matrix liquid crystal displays (AMLCD) are employed extensively in laptop computers and other information display products. The operation of an AMLCD display requires that each picture or display element (pixel) have a corresponding thin-film transistor (TFT) associated with it for selecting or addressing the pixel to be on or off. Currently, AMLCD displays employ transistor materials that may be deposited onto glass substrates but are not transparent (usually amorphous, polycrystalline, or continuous-grain silicon are the materials used to fabricate TFTs on glass). Thus, the portion of the display glass occupied by the addressing electronics is not available for transmission of light through the display. Therefore, the availability of transparent transistors for AMLCD addressing would improve display performance by allowing more light to be transmitted through the display.
[0005] Certain embodiments will be described in more detail with reference to the following drawings:
[0006] FIG. 1 is a sectional view of a first embodiment of a presently disclosed transistor structure;
[0007] FIG. 2 is a sectional view of a second embodiment of a presently disclosed transistor structure;
[0008] FIG. 3 is a sectional view of a third embodiment of a presently disclosed transistor structure;
[0009] FIG. 4 is a graph showing drain-source current (IDS) versus drain-source voltage (VDS), as a function of gate-source voltage (VGS), for the transistor structure depicted in FIG. 1 (the gate-source voltage varies from +40V (top curve) to +2 V in 2 V steps);
[0010] FIG. 5 is a graph showing the IDS vs. VGS characteristics for the transistor structure depicted in FIG. 1 at three different drain-source voltages;
[0011] FIG. 6 is a graph showing inverter transfer characteristics for the transistor structure depicted in FIG. 1 using a transparent thin-film resistor load (R=70 M&OHgr;) and a power supply voltage, VDD=40 V; and
[0012] FIG. 7 is a graph showing the optical transmission characteristics through the source or drain portion of the transistor structure depicted in FIG. 1.
DETAILED DESCRIPTION OF SEVERAL EMBODIMENTS
[0013] For ease of understanding, the following terms used herein are described below in more detail:
[0014] "Enhancement-mode transistor" means a transistor in which there is negligible current flow (i.e., there is no conducting channel) between a source and a drain at zero gate voltage. In other words, the transistor device is "normally off." In contrast, a depletion-mode transistor is "normally on" meaning that a current flows between a source and a drain at zero gate voltage.
[0015] "Gate" generally refers to the insulated gate terminal of a three terminal FET when used in the context of a transistor circuit configuration.
[0016] "Substantially insulating" can include insulating materials (e.g., materials having a resistivity of greater than about 1010 &OHgr;-cm) and semi-insulating materials (e.g., materials having a resistivity of about 103 &OHgr;-cm to about 1010 &OHgr;-cm).
[0017] "Substantially transparent" generally denotes a material or construct that does not absorb a substantial amount of light in the visible portion (and/or infrared portion in certain variants) of the electromagnetic spectrum.
[0018] "Vertical" means substantially perpendicular to the surface of a substrate.
[0019] The preceding term descriptions are provided solely to aid the reader, and should not be construed to have a scope less than that understood by a person of ordinary skill in the art or as limiting the scope of the appended claims.
[0020] Disclosed herein are enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. Devices that include the transistors and methods for making the transistors are also disclosed.
[0021] One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO or SnO2. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. The transistor also includes a source that can inject electrons into the channel layer for accumulation at the channel layer/gate insulator layer interface and a drain that can extract electrons from the channel layer.
[0022] A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO or substantially insulating SnO2, the substantially insulating ZnO or substantially insulating SnO2 being produced by annealing. A gate insulator layer is located adjacent to the channel layer and comprises a substantially transparent material. The transistor also includes a source, a drain, and a gate electrode.
[0023] A method for making the transistors includes providing a gate insulating layer, depositing ZnO or SnO2 onto at least a portion of a surface of the gate insulating layer, and annealing the ZnO or SnO2 for about 1 to about 5 minutes at a temperature of about 300 to about 1000° C. in an oxidative atmosphere.
[0024] The transistors may be included in optoelectronic display devices as switches coupled to at least one display element. Another disclosed device is a substantially transparent, dynamic random-access memory cell, comprising a substantially transparent capacitor coupled to the transistor. A further application of the transistors is in substantially transparent inverters wherein the transistor is coupled to a load device.
[0025] In general, the transistor structure includes a substrate, a gate electrode, a gate insulator layer, a channel layer, a source and a drain. The channel layer may be positioned adjacent to the gate insulator layer so that a surface of the channel layer is contiguous with a surface of the gate insulator layer. The contact region of the channel layer surface and the gate insulator layer surface is referred to herein as the channel layer/gate insulator layer interface. In exemplary constructs, the channel layer insulating material is different than the gate insulator layer material and the channel layer/gate insulator layer interface defines a discrete material boundary.
[0026] A feature of an embodiment of the transistor structure is that the channel layer/gate insulator layer interface may define a conducting channel for the flow of electrons from the source to the drain. In other words, the transistor may be classified as a "surface-channel" or "interface-channel" device. The applied gate voltage facilitates electron accumulation in the channel layer/gate insulator layer interface region. In addition, the applied voltage enhances electron injection from the source to the channel layer/gate insulator layer interface and electron extraction therefrom by the drain.
[0027] Another characteristic of the transistor structure is that selected embodiments of the construct or combination of the channel layer and the gate insulator layer may exhibit an optical transmission of at least about 90%, more particularly at least about 95%, across the visible portion (and/or infrared portion in certain variants) of the electromagnetic spectrum. Each of the additional components of the structure (i.e., substrate, gate electrode, source/drain terminals) may be optionally opaque or substantially transparent depending upon the desired end use of the transistor. In certain embodiments, the transistor structure as a whole (and/or individual components of the transistor) may exhibit an optical transmission of at least about 50%, more particularly at least about 70%, and most particularly at least about 90%, across the visible portion (and/or infrared portion in certain variants) of the electromagnetic spectrum.
[0028] A further feature of the FET disclosed herein is that it may easily be fabricated as a thin film transistor (TFT). For example, relatively low processing temperatures (e.g., not exceeding about 800° C.) may be used and there is no need for ion implanting to set the channel threshold voltage and define the source and drain contacts in certain variants of the FET structure. Such TFTs typically are very useful in association with optoelectronic device as explained below in more detail.
[0029] The channel layer typically is made from a substantially insulating material that is also substantially transparent. A negligible amount of electrons is inherently available in the bulk portion of the channel layer since the channel layer is made from a substantially insulating material. In addition, the substantially insulating channel layer may provide inherent electrical isolation for multiple devices sharing a continuous channel layer film (with patterned gate, source, and drain electrodes defining each device). Such inherent device isolation means that patterning of the channel layer film is not necessary since conductivity at the channel layer/gate insulator layer is exhibited only beneath the patterned gate electrodes.
[0030] Illustrative materials for the channel layer include ZnO and SnO2. Insulating ZnO and SnO2 may be made by an annealing process, particularly rapid thermal annealing (RTA). Such insulating ZnO and SnO2 typically exhibit a bandgap of less than about 5 eV.
[0031] For example, a layer of ZnO may be deposited (e.g., by sputtering or chemical vapor deposition) and subsequently undergo annealing for about 1 to about 5 minutes at a temperature of about 300 to about 1000° C., particularly about 700 to about 800° C., in a substantially oxidative atmosphere. Although not bound by any theory, it is believed that such a process should result in the incorporation of more oxygen into the ZnO layer, thus reducing the oxygen vacancy concentration. Oxygen vacancies in ZnO can render it n-type and conductive. High temperature (i.e., at least about 700° C.) annealing in inert atmospheres such as argon may also produce insulating ZnO. Although not bound by any theory, such higher temperature anneals may improve the ZnO crystallinity, thus improving the electron transport properties. Such insulating ZnO typically is not doped.
[0032] Similarly, a layer of SnO2 may be deposited (e.g., by sputtering or chemical vapor deposition) and subsequently undergo annealing for about 1 to about 5 minutes at a temperature of about 300 to about 1000° C., particularly about 700 to about 900° C., in a substantially oxidative atmosphere. Although not bound by any theory, it is believed that such a process should result in the incorporation of more oxygen into the SnO2 layer, thus reducing the oxygen vacancy concentration. Oxygen vacancies in SnO2 can render it n-type and conductive. High temperature (i.e., greater than about 700° C.) annealing in inert atmospheres such as argon may also produce insulating SnO2. Although not bound by any theory, such higher temperature anneals may improve the SnO2 crystallinity, thus improving the electron transport properties. The resistivity of the SnO2 may also be enhanced by substitutional doping with an acceptor dopant such as, for example, Al, In, Ga, Bi, B, La, Sc, Y, Lu, Er, Ho, and mixtures thereof.
[0033] The thickness of the channel layer may vary, and according to particular examples it can range from about 10 to about 500 nm. The channel length also may vary, and according to particular examples it can range from about 1,000 to about 100,000 nm.
[0034] The gate insulator layer may be made from any material exhibiting insulating properties required for gate insulators, particularly a substantially transparent material. Gate insulator materials typically exhibit a bandgap of greater than about 5 eV. Illustrative materials include substantially transparent materials such as aluminum-titanium oxide (Al2O3/TiO2), Al2O3, MgO, SiO2, silicon nitride, and silicon oxynitride. One distinctive example of a substantially transparent material is aluminum-titanium oxide grown by atomic layer deposition. The thickness of the gate insulator layer may vary, and according to particular examples it can range from about 10 to about 300 nm. The gate insulator layer may be introduced into the structure by techniques such as chemical vapor deposition, sputtering, atomic layer deposition, or evaporation.
[0035] Source/drain terminals refer to the terminals of a FET, between which conduction occurs under the influence of an electric field. Designers often designate a particular source/drain terminal to be a "source" or a "drain" on the basis of the voltage to be applied to that terminal when the FET is operated in a circuit. The source and drain may be made from any suitable conductive material such as an n-type material. The source and drain materials are optionally opaque materials or substantially transparent materials. Illustrative materials include transparent, n-type conductors such as indium-tin oxide (ITO), ZnO, SnO2, or In2O3 or opaque metals such as Al, Cu, Au, Pt, W, Ni, or Ti. Especially useful materials for the source and drain are those that can inject (and extract) electrons into the channel layer insulating material. Examples of such electron injection materials include indium-tin oxide, LaB6, and ZnO:Al.
[0036] The source and drain may be introduced into the structure by techniques such as chemical vapor deposition, sputtering, evaporation, and/or doping of the channel layer material via diffusion or ion implantation. The source and drain terminals may be fabricated such that they are geometrically symmetrical or non-symmetrical.
[0037] The gate electrode may be made from any suitable conductive material. The gate electrode material is optionally an opaque material or a substantially transparent material. Illustrative gate electrode materials include transparent, n-type conductors such as indium-tin oxide (ITO), ZnO, SnO2, or In2O3, or opaque metals such as Al, Cu, Au, Pt, W, Ni, or Ti. The thickness of the gate electrode may vary, and according to particular examples it can range from about 50 to about 1000 nm. The gate electrode may be introduced into the structure by chemical vapor deposition, sputtering, evaporation and/or doping.
[0038] "Substrate", as used herein, refers to the physical object that is the basic workpiece that is transformed by various process operations into the desired microelectronic configuration. A substrate may also be referred to as a wafer. Wafers may be made of semiconducting, non-semiconducting, or combinations of semiconducting and non-semiconducting materials. The substrate may be made from any suitable material. The substrate material is optionally an opaque material or a substantially transparent material. Illustrative substrate materials include glass and silicon. The thickness of the substrate may vary, and according to particular examples it can range from about 100 &mgr;m to about 1 cm.
[0039] Electrical contact to the gate electrode, source, drain and substrate may be provided in any manner. For example, metal lines, traces, wires, interconnects, conductors, signal paths and signaling mediums may be used for providing the desired electrical connections. The related terms listed above, are generally interchangeable, and appear in order from specific to general. Metal lines, generally aluminum (Al), copper (Cu) or an alloy of Al and Cu, are conductors that provide signal paths for coupling or interconnecting, electrical circuitry. Conductors other than metal may also be utilized.
[0040] An illustrative n-channel operation of the transistor involves applying a positive voltage to the gate electrode, grounding the source, and applying a positive voltage to the drain. For example, a voltage of about 5 to about 40 V may be applied to the gate electrode and the drain during operation. The threshold voltage may range from about 1 to about 20 V. Electrons flow from the source, along the conducting channel created at the channel layer/gate insulator layer interface, and out of the transistor through the drain. The effective mobility of the electrons at the interface may vary depending upon the specific structure, but could range, for example, from about 0.05 to about 20 cm2V−1s−1. Simply removing the positive voltage applied to the gate electrode turns the transistor off since the transistor is an enhancement-mode transistor.
[0041] The transistor structures disclosed herein may be used for fabricating chips, integrated circuits, monolithic devices, semiconductor devices, and microelectronic devices. One example of a microelectronic device is an optoelectronic device. An illustrative optoelectronic device is an active-matrix liquid-crystal display (AMLCD).
[0042] One exemplar device is an optoelectronic display device that includes elements having electrodes and an electro-optical material disposed between the electrodes. A connection electrode of the transparent transistor may be connected to an electrode of the display element, while the switching element and the display element overlap one another at least partly. An optoelectronic display element is here understood to be a display element whose optical properties change under the influence of an electrical quantity such as current or voltage such as, for example, an element usually referred to as liquid crystal display (LCD). The presently detailed transparent transistor is sufficiently fast for switching the display element at such a high frequency that the use of the transparent transistor as a switching element in a liquid crystal display is possible. The display element acts in electrical terms as a capacitor that is charged or discharged by the accompanying transparent transistor. The optoelectronic display device may include many display elements each with its own transparent transistor, for example, arranged in a matrix. The transparent transistors may be arrayed for LCD devices as described, for example, in Kim, "Thin-Film-Transistor Device Design", Information Display 2/02, p. 26 (2002).
[0043] Other examples of microelectronic devices that could employ the transistor structure shown herein include inverters, analog amplifiers and single-transistor dynamic random-access memory (DRAM) cells, and like devices.
[0044] For instance, a transparent enhancement-mode transistor whose source is connected to one terminal of a transparent capacitor, while the other terminal of the capacitor is grounded, constitutes a transparent single-transistor dynamic random-access memory (DRAM) cell. In such a DRAM cell, information is stored as charge on a capacitor, with the enhancement-mode transistor serving as an access transistor that controls the capacitor charge state. Usually in such a DRAM cell, a logic 0 is represented by negligible capacitor charge and a concomitantly small capacitor voltage. In contrast, a logic 1 is obtained by charging the capacitor, thus increasing the capacitor voltage until it approaches the power supply voltage.
[0045] The entire DRAM cell described herein, or a portion thereof, is transparent. Fabricating transparent capacitors and connecting them to a transparent transistor to realize a DRAM cell can be accomplished using various techniques. Specifically, a transparent capacitor may be constructed by sandwiching a transparent insulator layer, using materials such as Al2O3 or SiO2, between two transparent conductors, using materials such as indium-tin oxide, ZnO, or SnO2.
[0046] Illustrative examples of specific transistor structures are shown in FIGS. 1-3. The specific examples described below are for illustrative purposes and should not be considered as limiting the scope of the appended claims. In FIGS. 1-3 like reference numerals refer to like elements unless otherwise indicated.
[0047] A TFT structure 1 is illustrated that was fabricated on a one-inch by one-inch thick composite substrate. The platform includes a glass substrate 2, a 200 nm thick, indium-tin oxide (ITO) gate electrode 3 coated on the substrate 2, and a 200 nm thick, aluminum-titanium oxide gate insulator layer 4.
[0048] A ZnO channel and an ITO source/drain electrode film was deposited via ion beam sputtering in 10−4 Torr of Ar/O2 (80%/20%); the substrate was unheated during deposition. The ZnO channel layer 5 (100 nm thick), an ITO source electrode 6 (300 nm thick) and, an ITO drain electrode 7 (300 nm thick) were defined using a shadow mask. The resulting structure defines a channel layer/gate insulator layer interface 8. A 300° C. rapid thermal anneal (RTA) in Ar immediately prior to both the ZnO and ITO depositions served to remove adsorbed contaminants from the exposed surface, yielding a noticeable improvement in film quality (particularly for ITO films). After deposition of the ZnO layer, a RTA (typically in O2 or Ar, at 600 to 800° C.) was employed to increase the ZnO channel resistivity and to improve the electrical quality of the channel layer/gate insulating layer interface 8. Following deposition of the ITO source/drain electrodes, a 300° C. RTA in O2 was used to improve the transparency of the ITO layer. In the transistor structure 1 the source/drain electrodes 6 and 7 are disposed on the top surface of the channel layer 5 (from a vertical perspective) and the gate electrode 3 and channel layer 5 are disposed, respectively, on opposing surfaces of the gate insulator layer 4. Consequently, structure 1 allows for high temperature processing of the ZnO channel layer 5 prior to deposition and processing of the ITO source/drain electrodes 6 and 7. Certain electrical and physical characteristics of the TFT structure 1 were evaluated as described below and illustrated in FIGS. 4-7.
[0049] With reference to FIG. 4, n-channel, enhancement-mode behavior is obtained as demonstrated by the fact that a positive gate voltage in excess of ˜15 V (the threshold) is required to obtain appreciable drain-source current. These IDS-VDS curves exhibit prototypical FET characteristics; of particular significance is the flatness of these curves at large drain voltages (i.e. they exhibit 'hard' saturation). The drain and gate voltages employed are rather large compared to conventional FETs; gate and drain voltages can be reduced to the range expected for typical FET operation (i.e. ˜5-10 V), by simply reducing the gate insulator thickness. In the TFT structure 1 the insulator thickness is ˜200 nm, as optimized for electroluminescent display applications; if an otherwise identical insulator is rescaled to a thickness of 20 nm, the gate and drain voltages will be reduced by a factor of approximately 10.
[0050] The IDS of structure 1 is currently rather small (i.e., IDS (max) is about 6 &mgr;A in FIG. 4). A larger IDS may be desirable for most applications. The magnitude of IDS is determined by two factors. One is the effective mobility of the channel electrons, &mgr;eff (about 0.05-0.2 cm2V−1s−1 for the TFT structure 1). Process/device optimization should result in an improvement in &mgr;eff by a factor of about 2 to 100 which will lead to a corresponding increase in IDS. The second factor is the aspect ratio. The aspect ratio of the TFT structure 1 (the physical width of the gate, Z, divided by the length of the gate, L) is about 2 (with Z=2L=6000 &mgr;m). A larger aspect ratio will lead to a larger IDS.
[0051] FIG. 5 illustrates the IDS-VGS characteristics of the TFT structure 1 at three different drain voltages. This figure shows that there is a factor of 105-106 difference between the 'on' and 'off' currents when the transistor is used as a switch.
[0052] FIG. 6 shows the transfer characteristics of the TFT structure 1 when it is employed as an inverter. A ZnO transparent thin-film resistor (R=70 M&OHgr;) is used as the inverter passive load with a power supply voltage VDD=40 V. A logic swing of about 15 V between 15 and 30 V is clearly evident from this curve. This constitutes a demonstration of the use of the presently described transparent TFT as a transparent inverter. In its simplest implementation, a logic inverter is comprised of two constituents: a transistor coupled to a load device. The load device may be a resistor, as employed in this example. Alternatively, a depletion- or enhancement-mode transistor may also be used as load devices, typically offering superior performance. The fundamental property of a logic inverter is that it performs a logical not operation, in which a logic 0 (1) input produces a logic 1 (0) output. Successful achievement of a transparent logic inverter, as described herein, is significant since the inverter is the most basic building block for achieving transparent digital electronics. Optimization of the transparent thin film transistor via reducing the insulator thickness, reducing physical dimensions, and increasing the current drive capability (increased aspect ratio and effective mobility) will lead to a significant reduction in the required power supply voltage for inverter operation.
[0053] Transparent transistors may also be employed in amplifier applications. For example, the inverter structures described above can also function as simple analog inverting amplifiers. With the appropriate DC bias at the input, a small input signal (superimposed upon the DC bias) is amplified by the inverter transfer characteristic. In addition to such simple amplifier configurations, these transistors could be directly applied in arbitrary amplifier configurations, with the limitation that the maximum operating frequency will be relatively low due to the low mobility of these devices.
[0054] FIG. 7 shows the optical transmission of the TFT structure 1 through the source 6 or drain 7 (optical transmission through the channel, not shown here, is higher than through the source or drain). The average transmission in the visible portion of the electromagnetic spectrum (450-700 nm) is about 90% (about 95% through the channel). Visually, the transparent TFT structure is essentially invisible; a slight tinting of the glass substrate is apparent upon close inspection.
[0055] In another transparent TFT structure 10 version shown in FIG. 2, a source electrode 11 (100 nm thick) and a drain electrode 12 (100 nm thick) were made by selectively doping the ends of a ZnO channel layer 13 (100 nm thick) with In (or any other suitable n-type dopant). This was accomplished by ion beam sputter depositing a thin (about 5 nm) ITO layer using the source/drain shadow mask before depositing the ZnO channel film. A subsequent high-temperature (˜600-800° C.) annealing step was performed to diffusion-dope the ZnO, thus forming n-type doped source/drain regions 11 and 12. The diffusion-doping RTA may also function as the oxidizing RTA for the ZnO. ITO contacts may be placed over the source and drain regions to provide better electrical contact. The substrate 2, gate electrode 3, gate insulator layer 4, and channel layer/gate insulator layer interface 8 are the same as in FIG. 1.
[0056] In a third variation of a TFT structure 20, an ITO source electrode 21 (300 nm thick) and ITO drain electrode 22 (300 nm thick) are deposited prior to formation of a ZnO channel layer 23 (100 nm thick). The ZnO channel layer 23 is subsequently deposited conformally over the ITO source/drain electrodes 21 and 22. After deposition of the ZnO, a 700° C. Ar anneal was performed, followed by a 300° C. oxygen anneal. The substrate 2, gate electrode 3, gate insulator layer 4, and channel layer/gate insulator layer interface 8 are the same as in FIG. 1.
[0057] Having illustrated and described the principles of the disclosed devices and methods with reference to several embodiments, it should be apparent that these devices and methods may be modified in arrangement and detail without departing from such principles.
[0058] What is claimed is:
1. A field effect transistor, comprising:
a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO or SnO2;
a gate insulator layer comprising a substantially transparent material and being located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface;
a source that can inject electrons into the channel layer for accumulation at the channel layer/gate insulator layer interface; and
a drain that can extract electrons from the channel layer;
wherein the field effect transistor is configured for enhancement-mode operation.
2. The transistor according to claim 1, wherein the channel layer/gate insulator layer interface defines an electron conducting channel between the source and the drain.
3. The transistor according to claim 1, wherein the field effect transistor comprises a thin film transistor.
4. The transistor according to claim 1, wherein the channel layer material is a different material from the gate insulator layer material.
5. The transistor according to claim 1, wherein the transistor is a surface-channel transistor.
6. The transistor according to claim 1, further comprising a gate electrode and a substrate, and wherein the source, drain, gate electrode, and substrate are each made from a substantially transparent material.
7. The transistor according to claim 1, further comprising a gate electrode and a substrate, and wherein at least one of the source, drain, gate electrode, or substrate is made from an opaque material.
8. The transistor according to claim 1, wherein the gate insulator layer comprises Al2O3/TiO2.
9. The transistor according to claim 6, wherein the gate insulator layer comprises Al2O3/TiO2 or Al2O3; the source, drain, and gate electrode each comprise indium-tin oxide; and the substrate comprises glass.
10. The transistor according to claim 1, wherein the channel layer/gate insulator layer interface defines a discrete material boundary.
11. The transistor according to claim 1, wherein the field effect transistor exhibits an optical transmission through the field effect transistor of at least about 50% in the visible portion of the electromagnetic spectrum.
12. The transistor according to claim 11, wherein the optical transmission is at least about 90% in the visible portion of the electromagnetic spectrum.
13. The transistor according to claim 1, wherein the channel layer is not ion implanted.
14. The transistor according to claim 1, wherein the channel layer comprises undoped ZnO.
15. The transistor according to claim 1, wherein at least one of the source and the drain comprises a material selected from indium-tin oxide, LaB6, or ZnO:Al.
16. The transistor according to claim 1, wherein the channel layer material exhibits a bandgap of less than about 5 eV.
17. The transistor according to claim 1, wherein the ZnO or SnO2 has a reduced oxygen vacancy concentration.
18. A field effect transistor, comprising:
a channel layer comprising a substantially transparent material selected from substantially insulating ZnO or substantially insulating SnO2, the substantially insulating ZnO or substantially insulating SnO2 being produced by annealing;
a gate insulator layer located adjacent to the channel layer;
a source;
a drain; and
a gate electrode;
19. The transistor according to claim 18, wherein the gate insulator layer comprises a substantially transparent material.
20. The transistor according to claim 19, wherein the gate insulator layer comprises Al2O3/TiO2.
21. The transistor according to claim 18, further comprising a substrate, wherein the source, drain, gate electrode, and substrate are each made from a substantially transparent material.
22. The transistor according to claim 18, further comprising a substrate, and wherein at least one of the source, drain, gate electrode, or substrate is made from an opaque material.
23. The transistor according to claim 18, wherein the field effect transistor comprises a thin film transistor.
24. The transistor according to claim 18, wherein the channel layer comprises insulating ZnO fabricated by annealing a ZnO film for about 1 to about 5 minutes at a temperature of about 300 to about 1000° C. in a substantially oxidative or inert atmosphere.
25. The transistor according to claim 24, wherein the gate insulator layer comprises Al2O3/TiO2 or Al2O3; the source, drain, and gate electrode each comprise indium-tin oxide; and the substrate comprises glass.
26. The transistor according to claim 18, wherein the channel layer is interposed between the gate insulator layer and the source and drain.
27. The transistor according to claim 18, wherein the channel layer and the gate electrode are disposed, respectively, on opposing surfaces of the gate insulator layer.
28. The transistor according to claim 18, wherein the channel layer is not ion implanted.
29. The transistor according to claim 18, wherein the channel layer comprises undoped ZnO.
30. The transistor according to claim 18, wherein at least one of the source and the drain comprises a material selected from indium-tin oxide, LaB6, or ZnO:Al.
31. The transistor according to claim 18, wherein the channel layer material exhibits a bandgap of less than about 5 eV.
32. The transistor according to claim 18, wherein the channel layer is not interposed between the gate insulator layer and the source and drain.
33. The transistor according to claim 18, further comprising a substrate, and wherein the gate electrode is disposed adjacent to the substrate.
34. The transistor according to claim 18, wherein the annealed ZnO or SnO2 has a lower oxygen vacancy concentration relative to ZnO or SnO2 that has not been annealed.
35. A thin film transistor comprising:
a discrete channel layer comprising an inorganic, substantially insulating material; and
a gate insulator layer located adjacent to the channel layer,
wherein the combined channel layer and gate insulator layer construct exhibits an optical transmission through the construct of at least about 90% in the visible portion of the electromagnetic spectrum, and is configured for enhancement-mode operation.
36. The transistor according to claim 35, wherein the combined channel layer and gate insulator layer construct exhibits an optical transmission through the construct of at least about 95% in the visible portion of the electromagnetic spectrum.
37. The transistor according to claim 36, wherein the channel layer comprises insulating ZnO.
38. A method for operating a field effect transistor, comprising:
providing a field effect transistor that includes (i) a channel layer comprising a substantially insulating, substantially transparent material selected from ZnO or SnO2; (ii) a gate insulator layer located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface (iii) a source; (iv) a drain; and (v) a gate electrode; and
applying a positive voltage to the gate electrode to effect a flow of electrons at the channel layer/gate insulator layer interface, wherein in the absence of an applied positive voltage substantially no current flow occurs.
39. The method according to claim 38, wherein the gate insulating layer comprises a substantially transparent material.
40. The method according to claim 38, wherein the electrons flowing at the channel layer/gate insulator layer interface have an effective mobility of about 0.05 cm2V−1s−1 to about 20 cm2V−1s−1.
41. The method according to claim 38, wherein a voltage of about 5 to about 40 V is applied to the gate electrode and the drain.
42. A method for making an enhancement mode, field effect transistor comprising:
depositing ZnO or SnO2 onto at least a portion of a surface of a gate insulating layer; and
annealing the ZnO or SnO2 for about 1 to about 5 minutes at a temperature of about 300 to about 1000° C. in an oxidative or inert atmosphere.
43. The method according to claim 42, wherein ZnO is deposited.
44. The method according to claim 42, wherein SnO2 is deposited and the method further comprises introducing an acceptor dopant into the SnO2.
45. The method according to claim 42, wherein the gate insulator layer comprises a substantially transparent material.
46. The method according to claim 42, wherein the annealing temperature is about 700 to about 800° C.
47. The method according to claim 42, further comprising depositing on the ZnO or SnO2 layer at least one material for forming a source and a drain.
48. The method according to claim 42, further comprising depositing on the gate insulating layer at least one material for forming a source and a drain prior to depositing the ZnO or SnO2.
49. The method according to claim 48, wherein the material for forming a source and a drain is ion beam sputtered deposited onto the gate insulating layer, and the annealing of the ZnO diffusion dopes the ZnO with the source and drain material.
50. The method according to claim 47, further comprising annealing the source and drain material.
treating the ZnO or SnO2 such that the treated ZnO or SnO2 has a higher resistivity and a lower oxygen vacancy concentration relative to the untreated ZnO or SnO2.
52. An optoelectronic display device comprising at least one display element coupled to a switch comprising an enhancement-mode, field effect transistor according to claim 1.
53. The optoelectronic display device of claim 52, wherein the device comprises an active-matrix liquid-crystal display.
54. An optoelectronic display device comprising at least one display element coupled to a switch comprising an enhancement-mode, field effect transistor according to claim 18.
56. A substantially transparent, dynamic random-access memory cell, comprising a substantially transparent capacitor coupled to an enhancement-mode, field effect transistor according to claim 1.
57. A substantially transparent, dynamic random-access memory cell, comprising a substantially transparent capacitor coupled to an enhancement-mode, field effect transistor according to claim 18.
58. A substantially transparent logic inverter, comprising a load device coupled to an enhancement-mode, field effect transistor according to claim 1.
59. A substantially transparent logic inverter, comprising a load device coupled to an enhancement-mode, field effect transistor according to claim 18.
60. An amplifier comprising an enhancement-mode, field effect transistor according to claim 1.
61. An amplifier comprising an enhancement-mode, field effect transistor according to claim 18.
62. A microelectronic construct, comprising:
a continuous channel layer film comprising a substantially insulating material selected from ZnO or SnO2; and
a plurality of patterned gate insulator layers, sources, and drains arranged so that each gate insulator layer, source and drain forms, along with the continuous channel layer film, a discrete electrical device, wherein the gate insulator layer is located adjacent to the continuous channel layer film so as to define a channel layer/gate insulator layer interface.
63. The microelectronic construct according to claim 62, wherein the continuous channel layer film is not patterned.
64. The microelectronic construct according to claim 62, wherein the continuous channel layer film comprises a substantially transparent material, and the gate insulator layer comprises a substantially transparent material.
Filed: Nov 27, 2002
Patent Grant number: 7189992
Applicant:
Inventors: John F. Wager (Corvallis, OR), Randy L. Hoffman (Corvallis, OR)
Application Number: 10307162
Current U.S. Class: Gate Insulator Includes Material (including Air Or Vacuum) Other Than Sio 2 (257/410)
International Classification: H01L029/76;

redpajama_set_name: RedPajamaCommonCrawl


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Stepping into Bobby Fitzpatrick is like walking into your musty grandma's living area but soon after the shock of the shag pile carpet and dodgy wallpaper, you commence to have 1970s interior design envy. Aside from the decor, it is worth getting previous the kitsch for the delicious bottomless brunch. It is on the pricey side of what I would usually spend outdoors of central London but the unlimited cocktails (£18 for two hours) are so boozy that you will certainly stroll out of there happy. The only meals selection is pancakes (additional on prime of the cocktails) but there are savoury or sweet ones to select from. My mushroom and blue cheese dish was as well rich to finish, but my friend's salmon and hollandaise pancakes have been delicious. A Mexican inspired pancake selection topped with avocado and corn was also surprisingly light. If you fancy bottomless brunch with a 1970s twist, trek to West Hampstead to dine with Bobby (whoever he is).Classic l-shaped kitchen in Cornwall with shaker cabinets, white cabinets, stainless steel appliances, light hardwood flooring and an island. An illuminated bathroom mirror can be a stylish way to improve the lighting and space within your little en-suite and minimize fees also.You will also want to take methods to minimise the inevitable mess. Cover stairs and hallway floors with old dust sheets to protect them while products are becoming taken by way of the house. Ask for any cutting of tiles and plasterboard to be accomplished outdoors to minimise dust, and seal off doors to any bedrooms making use of masking tape to preserve them pristine.Electrical considerations are an essential element of bathroom organizing. Aside from obvious features such as lighting, it may possibly also be essential to give power for an exhaust fan, heated towel rail, or whirlpool bathtub. Water and electricity are a hazardous combination, so bathroom outlets and electrical energy should be grounded. Use GFCI outlets in bathrooms.Taureans totally really like entertaining guests, so the excellent interior will have lots of space for socialising. You're greatest suited to traditional design ideas rather than funky modern day stuff. You will thrive in a house atmosphere that has a rustic really feel with lots of authentic trimmings and a single or two pieces of fine art hanging on the walls.The vibrant and airy space characteristics a tub, washstands, and fittings by Waterworks. The bulkhead sconces are by Davey Lighting by way of Design and style Within Reach. Little bathrooms can still pack in a lot of storage! If you enjoyed this information and you would certainly such as to get additional information pertaining to you can find out more kindly visit the site. This small recessed set of shelves is tucked away but still manages to tidy away a lot of clutter. Excellent if you aren't blessed with space, or for excellent for a cloakroom.The Multitasker from MissFits Nutrition is the initial perfectly portioned, lean-pea protein shake designed just for ladies. Presented in a nifty single sachet, it will aid you feel stronger and recover more quickly right after a workout. With four you can Find Out more flavours to select from, Chocolate, Vanilla, Berry and Coffee, there is a treat for every taste bud - with no added sugars. The superfood sachets are also packed with cacao powder, vanilla beans, fruit and coffee beans. Appropriate for You Can Find Out More vegans, the shakes are gluten and GMO free of charge. Prices commence at £16 for 12.The kitchen is frequently lauded as the 'heart of the home', but in reality, the British kitchen has shrunk by over a third since the 1960s. Cut the bottom panel. The bottom panel will be 24" deep. The width will adjust based on the dimensions of your kitchen. The width need to equal the total width you want for the cabinet, minus the added with of the two side panels. Add bath salts in the bath even though the water is operating, to dissolve the salts in the water.Make certain that your faucets and showerheads would complement with your bathroom fixtures. If you have utilized a sink and tub that are streamlined, then use faucets and shower heads that would go along with it to get a modern appear like a goose neck faucet. If your fixtures are embellished, then you can get porcelain-brass combos for a conventional appear. Also, look into how successful are your chosen faucets and showerheads.It really is also a very good thought to pay a visit to a regional bathroom showroom for tips, as its designers will have plenty of expertise in maximising space while at the very same time minimising pricey blunders. To download a kitchen design brochure just click CONTINUE to go to the Wholesale Kitchens' web site. 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"The Twitter Account Is Mine" Says President Mnangagwa. He Posts His Opinions And Sentiments On It
Posted Feb 1, 2019	in	Social Media · 1 min read
Reports that the Presidential communications department is dysfunctional are probably true because so much contradictory is being said. Last week Presidential spokesman, Goerge Charamba said we shouldn't believe things said on the President's Twitter account.
But now the president himself is saying that we should believe what he says on Twitter because it's his account that he communicates his opinions and sentiments. The Mail and Telegraph reported that the President said:
The Twitter account is mine and every information on that handle is a reflection of my sentiments and opinion.
As if George Charamba's statement was not enough, Deputy Minister of Information, Energy Mutodi recently said that the President's tweets are not official. All this is now confusing us. The problem with this is that the day the President's Twitter account tweets something very inflammatory and divisive, probably no one will claim any responsibility and accountability to those tweets.


5 ways that Dads can help support Mom in the Delivery room.
Expectant moms are filled with excitement throughout their pregnancy. Most first-time moms don't quite know what to ask during labor and delivery. They rely heavily on their birth coach or the new dad-to-be to get them through the experience. Here are a few ways that dads can support mom in the delivery room.
Labor and delivery can be a long tedious process for many pregnant women. Having a plan to keep mom's mind off the labor and delivery process can be most helpful. Bringing playing cards, crossword puzzles, books and music can help occupy mom in between contractions. Whatever her hobbies are, be sure to include similar activities for the hospital bag.
Many childbirth preparation classes talk about having a birth plan, but few couples actually write one out. It's important to discuss pain management before the woman is in the throes of painful contractions. Discuss several alternatives with her doctor once you arrive at the hospital. It's always wise to keep your options open when it comes time to making a decision if your birth plan does not go according to your wishes. Advocate for your significant other if you feel her pain could be managed more proactively.
As labor progresses, the expectant mom-to-be can become panic stricken. Show your support by having a calm disposition and encourage her by telling her that she's doing a great job. While many women don't like to be touched late in the labor, rubbing her back or helping her find a more comfortable position is usually greatly appreciated. Putting a cool compress on her forehead or bringing ice chips can help increase her stamina as she's looking for the finish line.
During labor, the expectant mama will probably not focus on taking pictures for the baby book. However, once your bundle of joy is here, he or she will be grateful that you took the time to document the birthing process. Keep in mind that some shots are best saved to share just with the family, but many can be placed in the baby's book to share with friends.
Once the baby has arrived and is tucked away safely in the nursery and your partner is resting peacefully, present her with a congratulatory gift like chocolates, flowers or another fun treat you know she'll enjoy, to congratulate her on the birth of your new baby. Be sure to include a handwritten note expressing the sentiments of the day.
Being present in the moment is one of the best ways that a new dad can help mom through labor and delivery. Having thick skin and remaining calm during the last stage of labor will help ease anxiety and panic that mom may feel.


Pete Buttigieg (D), Mayor of South Bend, Indiana, seen speaking at the National Action Network National (NAN) convention in brand-new York City, NY.
Democratic presidential hopeful Pete Buttigieg, continuing his war-of-words with fellow Hoosier Mike Pence, said the vice president could "clear This particular up" by taking a broad stance against discrimination.
Buttigieg, the mayor of South Bend, Indiana, worked closely with Pence while Pence was governor. Since formally announcing his exploratory committee in late January, Buttigieg has rocketed to the upper tier of the Democratic presidential race. If successful, he would likely be the first openly gay nominee of a major party.
The spat with the vice president began last weekend when Buttigieg critiqued Pence's record on LGBT equality during an event hosted by an activist group, in addition to escalated on Wednesday when the vice president accused Buttigieg of attacking his Christian faith during an interview on CNBC.
Pence has long faced criticism coming from LGBT activists for his opposition to gay marriage in addition to his support for legislation of which his critics said targeted gays in addition to lesbians. Pence has noted of which as governor, he worked to implement the Supreme Court decision of which made gay marriage the law of the land.


text:
Crowley challenged by Astoria businessman
By Bill Parry
U.S. Rep. Joseph Crowley (D-Jackson Heights) is seeking his 10th term in Congress representing Queens and the Bronx against Republican challenger Frank Spotorno, a first time candidate and owner of the Park Avenue Elevator Cab Company in Astoria. Crowley is the leader of the Queens Democratic Party and vice chairman of the Democratic Caucus in the House of Representatives.
"I have been privileged to represent one of the most diverse districts in the country and I hope to earn that privilege once again to continue fighting on behalf of my constituents and on the matters most important to them," Crowley said. "The issues facing American families across the country are not unlike what people in my district are facing: the need for good paying jobs, affordable child care, comprehensive immigration reform and the opportunity to retire with peace of mind after a lifetime of work. And as a member of the elected leadership in the House Democratic Caucus, I will continue to put those needs at the forefront of our agenda as we work to make a real difference in people's lives."
Spotorno is the co-founder of the Bring Our Jobs Home organization that advocates for returning some of the millions of lost manufacturing and call center jobs back to the United States, and supports American companies that are doing the right thing and still making it in America.
"Millions of Americans no longer have a chance at the American Dream, because they can't find a good paying job with benefits," Spotorno said. "I'm running because the people of Queens and the Bronx need a congressman who will work to pass legislation in Washington that will encourage corporations to bring their jobs home, and help keep the existing jobs we still have here in the district.
Spotorno worked with the owners of the ISIS Cafe to change their name. It is now called the Rose Cafe. He has also worked to rebuild a bocce court in Astoria Park.
U.S. Rep. Carolyn Maloney (D-Astoria) has served in Congress since 1992 and built a reputation as one of the most prolific lawmakers on Capitol Hill, improving infrastructure, fighting for health care, and women' and childrens' rights.
"I have passed more than 70 measures including landmark legislation like the James Zadroga 9/11 Health and Compensation Act, which provides health coverage for 9/11 victims and first responders," Maloney said. "When I first ran for Congress, I did it because I wanted to improve the lives of my constituents. I am running for re-election because I want to continue to work for my constituents."
Maloney is facing Republican Robert Ardini, a former marketing executive who has operated a small publishing business for nearly a decade. Ardini's primary campaign issue is the national debt.
"The national debt is way out of control. If we don't stop the insanity now, we may find ourselves bankrupt like Greece," Ardini said. "All the money we're spending on interest on the debt we should be spending on roads and bridges, surveillance to combat terrorism, reducing taxes, and paying down that debt. And if we don't get a handle on it, it will just grow. We have to start balancing the budget. It's that simple.
Ardini's secondary campaign issues are congressional gridlock and term limits.
"My Democrat opponent has been a member of the House for 23 consecutive years," he said. "That can't be what our founders intended."
In southeast Queens, U.S. Rep. Gregory Meeks (D-Jamaica) has been challenged for his congressional seat by Michael O'Reilly, a Marine Corps veteran and airline pilot. The district includes the Rockaway peninsula as well as parts of Broad Channel, Hollis, Jamaica, Laurelton, Saint Albans, Springfield Gardens and South Ozone Park.
Meeks worked as an assistant district attorney and was a legislator in the state Assembly prior to his successful run for Congress in 1998, and he has been representing the 5th District since that time. He currently sits on the committees of financial services and foreign affairs in Congress, and said he intended to continue working to entice industry and jobs to areas like downtown Jamaica and the Rockaways, as well as help craft a transportation infrastructure bill.
"I'll continue to focus on some sensible gun control laws," Meeks said, pledging to try to close loopholes that allow criminals to bring guns in from out-of-state. He said he could not imagine Donald Trump winning the presidency, and said it would be important for Democrats in Congress to balance the power in Washington if he won.
"The Democratic role would be to save our republic," he said. "We want to make sure that we're a body that puts a check on the executive branch of government and make sure that democracy is preserved."
O'Reilly, in addition to his Marine Corps stint, is also a practicing attorney and in the past has been a pilot for Delta Airlines Express. On his website, O'Reilly asserts that he supports discontinuing Common Core, and advocates for setting Congressional term limits.
"If you are not happy with the way our politicians are handling the major problems that we all face every day in Queens, our neighborhood and in our country, then go out and vote this November – vote with your own heart and your own mind," he wrote on his website.


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Music to Rye Harbour RNLI's ears
On Saturday 16 June Rye Harbour RNLI's crew, fundraisers and Press Officers lent a hand at Oakfest 2018 Music Festival to help raise funds for vital kit for the volunteer crew.
RNLI/KT Bruce
Organisers Matt and John Parsons and family and supporters
Matt and John Parsons conceived the idea of a music festival to mark the 10th anniversary of the passing of Matt's best friend, Andy, from Osteosarcoma, a rare form of bone cancer. The first year they raised money for the Teenage Cancer trust. The festival was such an amazing success that people requested that it should be repeated in the following years so that donations could be made to charities in the area. In the first four years they raised over £12,000 for their selected charity. Last year it was the turn of the RNLI and once again this year again it was chosen. Many local businesses give their support and Frank and Lisa provide the venue.
John said, 'We hope that by supporting the community, the community will support our event. We cannot thank people enough for contributing so much and Tony and Sharon from RNLI Rye Harbour have been amazing.'
All the performers give up their time for free to support by playing really great music to entertain the crowds: without them there would be no festival. John and Matt and their families are truly inspirational and RNLI Rye Harbour is so grateful for their donations. It helps the station to Save Lives at Sea and to buy new vital kit.
Joseph Brown, a member of the volunteer crew said, 'It was such a good day for families and adults alike with great music and good food: all for a good cause close to so many people's hearts. The atmosphere was terrific.'
· Kt Bruce, Rye Harbour RNLI volunteer Lifeboat Press Officer (07789) 818878 Kt@ktbrucephotography.com
· Paul Dunt, Regional Media Officer (South East), 0207 6207426, 07785 296252 paul_dunt@rnli.org.uk
· For enquiries outside normal business hours, contact the RNLI duty press officer on 01202 336789
RNLI online: For more information on the RNLI please visit http://www.rnli.org/. News releases and other media resources, including RSS feeds, downloadable photos and video, are available at the RNLI News Centre.
The Royal National Lifeboat Institution is the charity that saves lives at sea. Our volunteers provide a 24-hour search and rescue service in the United Kingdom and Ireland from 237 lifeboat stations, including four along the River Thames and inland lifeboat stations at Loch Ness, Lough Derg, Enniskillen and Lough Ree. Additionally the RNLI has more than 1,000 lifeguards on over 180 beaches around the UK and operates a specialist flood rescue team, which can respond anywhere across the UK and Ireland when inland flooding puts lives at risk.
The RNLI relies on public donations and legacies to maintain its rescue service. As a charity it is separate from, but works alongside, government-controlled and funded coastguard services. Since the RNLI was founded in 1824 our lifeboat crews and lifeguards have saved at least 140,000 lives. Volunteers make up 95% of the charity, including 4,600 volunteer lifeboat crew members and 3,000 volunteer shore crew. Additionally, tens of thousands of other dedicated volunteers raise funds and awareness, give safety advice, and help in our museums, shops and offices.
Members of the public may contact the RNLI on 0300 300 9990 or by email.
Bellerophon resting after performing
It was a family day out with lots of fun for all
Press Officers from Rye Harbour joining in the fun
security and RNLI crew members working together
no matter how young you were it was full of fun
KT Bruce
Lifeboat Press Officer, Rye Harbour Lifeboat Station
Rye Harbour Lifeboat Station


[Spain] As volcanoes erupt and plans get covered in ashes, others continue with good news. ReviewPro, an advanced reputation management platform for the hotel sector has secured an additional €820,000 ($1.1m) in seed capital for further growth, having raised approx. €1m last year.
The new funding comes from well know personalities in Spain, among them Nicolas Iglesias, co-founder of Spain's top hosting provider Arsys, Marek Fodor, co-founder and ex-CTO of Atrapalo and Eric Shultink, CTO of Tuenti and one of the first Facebook employees, as well as other well known business angels.
We covered ReviewPro in January. Since then they have expanded into France, Italy, Portugal and Argentina and with the new capital are planning aggressive expansion into a further 30 countries, aiming to reach 2,400 hotels by the end of the year. They are now analyzing up to 22,000,000 reviews in a total of 7 languages. Growth is rapid.
There are countless platforms out there for reputation management in general, no doubt. However, ReviewPro isn't going for the mass market, but rather targeting the mature and lucrative hotel market where reputation management couldn't be more crucial. They've specifically focused in on hotel business intelligence, which allows them to offer features, measuring points and competitive analysis geared for hotelier's business interests. That's precisely what makes them attractive; it's much easier for hotel marketeers to find value in their technology, rather than relying on more generic offerings.


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Q: Compiling cUrl with OpenSSL on Windows, missing -lcrypto and -lssl When I try to compile cUrl without SSL support, there's no problem. I use command like this:
mingw32-make mingw32

I followed instructions in cUrl INSTALL file to make it support SSL, trying to compile it this way:
mingw32-make mingw32-ssl-zlib OPENSSL_PATH=D:/Programy/MinGW/OpenSSL ZLIB_PATH=D:/Programy/MinGW/zlib

But it doesn't work as I get this error:
 D:\Programy\MinGW\cUrl>mingw32-make mingw32-ssl-zlib OPENSSL_PATH=D:/Programy/Mi
nGW/OpenSSL ZLIB_PATH=D:/Programy/MinGW/zlib
mingw32-make -C lib -f Makefile.m32 CFG=mingw32-ssl-zlib
mingw32-make[1]: Entering directory 'D:/Programy/MinGW/cUrl/lib'
gcc -s -shared -o libcurl.dll \
  -Wl,--output-def,libcurl.def,--out-implib,libcurldll.a \
  file.o timeval.o base64.o hostip.o progress.o formdata.o cookie.o http.o sendf
.o ftp.o url.o dict.o if2ip.o speedcheck.o ldap.o version.o getenv.o escape.o mp
rintf.o telnet.o netrc.o getinfo.o transfer.o strequal.o easy.o security.o curl_
fnmatch.o fileinfo.o ftplistparser.o wildcard.o krb5.o memdebug.o http_chunks.o
strtok.o connect.o llist.o hash.o multi.o content_encoding.o share.o http_digest
.o md4.o md5.o http_negotiate.o inet_pton.o strtoofft.o strerror.o amigaos.o hos
tasyn.o hostip4.o hostip6.o hostsyn.o inet_ntop.o parsedate.o select.o tftp.o sp
lay.o strdup.o socks.o ssh.o rawstr.o curl_addrinfo.o socks_gssapi.o socks_sspi.
o curl_sspi.o slist.o nonblock.o curl_memrchr.o imap.o pop3.o smtp.o pingpong.o
rtsp.o curl_threads.o warnless.o hmac.o curl_rtmp.o openldap.o curl_gethostname.
o gopher.o idn_win32.o http_negotiate_sspi.o http_proxy.o non-ascii.o asyn-ares.
o asyn-thread.o curl_gssapi.o curl_ntlm.o curl_ntlm_wb.o curl_ntlm_core.o curl_n
tlm_msgs.o curl_sasl.o curl_multibyte.o hostcheck.o bundles.o conncache.o pipeli
ne.o dotdot.o x509asn1.o http2.o curl_sasl_sspi.o smb.o curl_sasl_gssapi.o curl_
endian.o curl_des.o vtls/openssl.o vtls/gtls.o vtls/vtls.o vtls/nss.o vtls/polar
ssl.o vtls/polarssl_threadlock.o vtls/axtls.o vtls/cyassl.o vtls/schannel.o vtls
/darwinssl.o vtls/gskit.o libcurl.res -L"D:/Programy/MinGW/OpenSSL/lib" -lcrypto
 -lssl -L"D:/Programy/MinGW/zlib" -lz -lwldap32 -lws2_32
D:/Programy/MinGW/mingw64/bin/../lib/gcc/x86_64-w64-mingw32/4.9.2/../../../../x8
6_64-w64-mingw32/bin/ld.exe: cannot find -lcrypto
D:/Programy/MinGW/mingw64/bin/../lib/gcc/x86_64-w64-mingw32/4.9.2/../../../../x8
6_64-w64-mingw32/bin/ld.exe: cannot find -lssl
collect2.exe: error: ld returned 1 exit status
Makefile.m32:300: recipe for target 'libcurl.dll' failed
mingw32-make[1]: *** [libcurl.dll] Error 1
mingw32-make[1]: Leaving directory 'D:/Programy/MinGW/cUrl/lib'
makefile:87: recipe for target 'mingw32-ssl-zlib' failed
mingw32-make: *** [mingw32-ssl-zlib] Error 2

I have downloaded cUrl v7.40.0 and Win64 OpenSSL v1.0.2a from Shining Light Productions.
From what I understand, this distribution of OpenSSL contains libeay32.dll, libssl32.dll and ssleay32.dll instead of libcrypto.dll and libssl.dll that I don't have and for for which the compiler is looking for. I also checked that I have all the three dlls in my C:\Windows\System32 folder. I'm using MinGW-w64 compiler, no MSYS, version 4.9.2.
What do I need to do in order to compile cUrl library with SSL support on Win64? Do I need to modify my compile command, some file, or have I downloaded wrong version of OpenSSL to begin with? Any help is truly appreciated.

A:
... Win64 OpenSSL v1.0.2a from Shining Light Productions. From what I understand, this distribution of OpenSSL contains libeay32.dll, libssl32.dll and ssleay32.dll instead of libcrypto.dll and libssl.dll that I don't have and for for which the compiler is looking for.

OpenSSL should be available in the MSYS Developer Tool Kit.
With the developer toolkit installed, just run:
mingw32-make mingw32-ssl-zlib

Mingw should find them since they are in well known locations without the need for OPENSSL_PATH=D:/Programy/MinGW/OpenSSL.
Just bike shedding: you should probably use no-zlib (or whatever the option is) since compression can leak information.

redpajama_set_name: RedPajamaStackExchange


With regular involvement, EnhanceFitness participants soon find themselves able to do the things they want to do, safely and independently. Participants say they feel better physically and see a boost in their activity levels. Also, they share it helps to elevate their mood and prevent depression.
EnhanceFitness is a Group Exercise class and is for members only. To participate in a class, simply find when your desired branch offers the class and come at that time.


The Angus Library and Archive is the leading collection of Baptist history and heritage worldwide. It contains more than 70,000 items relating to the life and history of Baptists in Britain and the wider scene.
The Angus Library and Archive unites the original collection of historical materials gathered by Principal Joseph Angus in the nineteenth century with the libraries and archive of the Baptist Union of Great Britain, Baptist Historical Society, Baptist Missionary Society and The Baptist Times. It offers printed books, pamphlets, journals, church and association records, church histories, manuscript letters and other artefacts from the early fifteenth century to the present day. It contains a comprehensive collection of Baptist periodicals from around the world.
The Angus Library and Archive has an extensive manuscript collection including collections from key Baptist people such as William Carey, C.H. Spurgeon, Joshua and Hannah Marshman and Willam Ward, E.A. Payne, and J. H Rushbrook. It also holds manuscripts for leading Baptist families such as Angus, Steele, Whitaker, and Reeves.
There is a collection of minutes and papers from a variety of Baptist organisations or organisations with which Baptists have been involved such as the European Baptist Federation, Baptist World Alliance, Baptist Historical Society, Deaconess Movement and the World Council of Churches. Special collections, including those of the Baptist Missionary Society, offer material relating to Baptist witness in Eastern Europe, the Caribbean, West Africa, India, China and South East Asia. Early connections between Baptists in Britain and the United States of America are well covered.


It began with a public spat with the US writer Lionel Shriver, and peaked when Sudanese-born Ms Abdel-Magied "Desecrated", as some saw it, Australia's venerated Anzac Day holiday. "LEST. WE. FORGET.," Ms Abdel-Magied wrote, in part referring to Australia's controversial detention of asylum seekers on remote Pacific islands. For her part, Ms Abdel-Magied believes Australia "Doesn't know how to have a nuanced conversation about race, or religion, for that matter". Although the ABC noted in a statement following the Anzac Day furore that Ms Abdel-Magied had deleted the offending post and apologised, Julianne Schultz, editor of Australia's Griffith Review magazine, says she was "Deeply disappointed that neither the ABC nor DFAT defended or protected her when she was under daily attack, despite her institutional attachment to them making her more of a target". "Abdel-Magied has a public position and chooses to have a public profile. It's no surprise that what she puts out in the public domain draws comment from others."


text:
PURVEYOR OF COOL, SUBVERSIVE POP, LES TECHNO RETURNS WITH DYSTOPIAN 'EDGE OF THE WORLD' SINGLE
Les Techno.
Purveyor of cool, subversive Pop, with one foot planted in a dystopian David Lynch future, and the other securely in heady post-punk and gothy 80's retro vibrations. Les Techno's self-produced string of recent singles have all exuded a surrealist attitude and a strange, moody, spacious, danceable signature sound.
His latest single "Edge of the World" is his best to date. A driving, dancy beat, a dubby bassline, an insistent alarm of analog synth and other bits and pieces of guitar in a psychedelic, clubby mixture with Les Techno's sardonic lyrics about "the party … at the edge of the world."
"Watching the Amazon burn, this song appeared out of nowhere, as an alarm in my head: we are all at the party at the edge of the world. We party and the world hurls into climate oblivion. "Swept over at the end of the road, where you lose control… you're at the party at the edge of the world….."
Follow Les Techno on Facebook, Instagram or Twitter.
About Les Techno:
Like a character out of a dystopian movie script, Les Techno projects an effortless mystique and a slight strangeness. Cooled out emotions and swaths of satire drip from his signature croon and artful lyrics. The rawness of the post-punk movement like the Psychedelic Furs and the Talking Heads combined with the electronica-infused pop popularized by artists like New Order all factor into Les Techno's sound, which would be equally at home on the radio or as vinyl spun at a post-apocalyptic goth club.
Headstuff.org applauds Les Techno's musical style, noting that "the scrappy riffing and Les's softly reverberated, crooning vocals sound like something straight out of a classic movie's montage sequence. His voice carries that confident but quivering quality, traceable to Bowie through Byrne, only a hint huskier. Hook after hook, with tongue-in-cheek lyrics, Les Techno has charm, wit and charisma in the bag." Alternative Nation dubbed him "a mad genius" with "seemingly boundary-less approach to crafting powerful, out of the box anthems."
Les Techno comes from New York City, a rocker that has played guitar and sang in the punk rock hangouts, including in the bands Sim-Stim and Love Posse. Trained as a guitarist, occasionally with the late jazz-man Larry Coryell, Les learned to work with analog synthesizers and analog tape
using razor blades and a grease pencil. While working on his "studio tan," Les created tracks and mixes across a wide variety of genres: classic hip-hop with Run-DMC (Profile) and Mobb Deep (Loud/RCA), reggae dance-hall with Georgie Blacks ("Kickup Unwine", RCA), techno dance with
Stimulator ("Are you a Freak?"/ PowWow), and dance remixes for Red Hot Chili Peppers ("Higher Ground"). He also worked with the late legendary funkmaster Bernie Worrell ("Downtown", Virgin/EMI).
Les Techno's familiarity with producing these different sonic styles is readily heard in Les' music. Cinematic, challenging, and filled with all variation of carefully crafted ear candy, Les Techno's music is the sound of a man truly making the music he wants to make. This project is a new mixture of rock guitar sounds, electronics, hip hop beats, and live bass. And his satirical lyrics delivered with a Morrison flavor.
independent Music Promotions' (www.independentmusicpromotions.com) revolutionary music PR campaigns are the most effective in the industry. Submit your music to us today.
How to Dine Alone with Dignity
Fabiola Gallerani, Ph.D. in The Narrative
I Know We Won't Be Forever, But I'll Take A Little While
Molly Burford in P.S. I Love You
Stories from the 1% in India: Women Who Stay Single for Life
Bella DePaulo in Fourth Wave


text:
Camping World Long Term Debt 2015-2022 | CWH
Camping World long term debt from 2015 to 2022. Long term debt can be defined as the sum of all long term debt fields.
Compare CWH With Other Stocks
Camping World Annual Long Term Debt
(Millions of US $)
Camping World Quarterly Long Term Debt
2022-09-30 $1,485
2017-12-31 $907
Consumer Discretionary Leisure & Recreation Services $2.031B $6.914B
Camping World Holdings, Inc. is a provider of services, protection plans, products and resources for recreational vehicle enthusiasts. The company's brand consists of Camping World and Good Sam. It offers new and used RVs for sale, vehicle service and maintenance through retail locations and membership clubs. Camping World Holdings, Inc. is based in Lincolnshire, United States.
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