text:
Simmons Inducted into College Baseball Hall of Fame
SEMINOLE - Former Seminole State College Trojan Baseball Coach Lloyd Simmons was honored Nov. 2 in Baton Rouge, Louisiana with induction into the College Baseball Hall of Fame.
Simmons was recognized, alongside Mike Martin, former head coach at Florida State University and five former college players. Players included University of Texas' Dave Chalk, Florida A&M's Andre Dawson, Southern California's Wally Hood, Cal State Fullerton's Mark Kotsay and Ferrum College of Virgina's Billy Wagner. Dennis Poppe, former NCAA Director of Championships, rounded out the 2019 Hall of Fame class from the new contributors section.
The "Night of Champions Gala" ceremony, held at the Raising Cain River Center Ballroom overlooking the Mississippi River in downtown Baton Rouge.
Simmons is the winningest coach in junior college baseball history with 1,804 wins. He led his teams to an unprecedented 13 trips to the NJCAA World Series, where they returned home as runners-up four times. His teams won 16 NJCAA Region II titles and 13 NJCAA District championships.
He coached 41 NJCAA All-Americans and more than 200 of his players signed professional baseball contracts, with 43 of those playing in the major leagues. Simmons was named Oklahoma Baseball Coaches Association Coach of the Year eight times during his career and was inducted into the NJCAA Hall of Fame in 1997.
"It's a great honor to be here and to be recognized with all the other great guys that are here to get this reward," Simmons said. "I'm really just thankful for all my players in the past that worked hard and were able to get me this honor."
During an on-stage interview during the induction ceremony, Simmons commented on the support he and his program received over the years from Seminole State College and the community of Seminole.
Seminole State College President Lana Reynolds said Simmons' induction in the College Baseball Hall of Fame focused the national spotlight on his career and the institution.
"Coach Simmons built a powerhouse baseball program at Seminole that is known throughout the country. This award brings national attention to his legendary accomplishments – and in doing so, brings such positive attention to Seminole. We are very proud of him and congratulate him on this well-deserved recognition," she said.
Saturday's ceremony began with a "Walk of Legends" that included former College Baseball Hall of Famers. Coaches and several members of the 2019 Little League World Series Champions from River Ridge, Louisiana, were also introduced and interviewed.
Several special national baseball awards were also presented during the evening. Erik Bakich from the University of Michigan was named the "Skip Bertman National Coach of the Year." Adley Rutschman of Oregon State, was presented the Dick Howser Trophy as "National Player of the Year." The "John Olerud Two-way Player of the Year" award went to Aaron Schunk of the University of Georgia. Mississippi State University's Ethan Small was named "National Pitcher of the Year" and Grae Kessinger from the University of Mississippi was the "2019 Brooks Wallace Shortstop of the Year."
A "National Collegiate Umpire Award" was presented to Jon Bible.
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Nothing demonstrates our experience and expertise better than a look at some of our most interesting projects.
Collaboratively, Hedson Rail works regionally, nationally and internationally on a wide variety of challenging assignments, for a number of high calibre industry partners.
Please take a look at our case studies, if you would like more information on our experience and knowledge in a specific area or discipline please get in touch.


text:
import pytest

from pytech.fin.asset.asset import Stock
import pytech.fin.analysis.random as rand
import pymc3 as pm

def test_monte_carlo(fb: Stock):
    cagr = fb.cagr()
    vol = fb.std()
    last_price = fb.last_price()
    print(last_price)
    trading_days = 252

    output = rand.monte_carlo(cagr, vol, trading_days, last_price)
    print(output)

@pytest.mark.skip('not a test.')
def test_vol_model(fb: Stock):
    trace = rand._vol_model(fb.get_data()['close'])
    print(trace)

redpajama_set_name: RedPajamaGithub


A good home landscape can really tie a home's design appeal together. Once your landscape is designed, it's important to maintain it. That being said, here are five easy ways you can maintain a good home landscape.
Leaves, branches, and other things can easily build up around the outside of your home and a garden. But, if you do daily maintenance, you won't have to worry about anything excessively piling up. This doesn't mean that you should do heavy gardening on a daily basis. All it means is that you should at least sweep your home's landscape once a day or every few days.
Although weeds are something that regularly pop up in a garden, they can ultimately ruin it. That's why it's important to remove any weeds as soon as you find them. Removing weeds is easier than it seems. Simply utilize a fertilizer or another kind of weed killer to remove them. If you're up to it, you could even use your hands to pull the weeds out.
Diseases can impact plants to the point that they can dry out and even die. If this happens, it's important to remove the affected plants as soon as possible because other plants can become affected.
Plants don't have to be dry or dead to cause problems to your landscape and home. Sometimes, plants can overgrow, such as trees. When trees overgrow or tilt too closely to your home, they can potentially cause damage. If this occurs, you might want to consider hiring a professional tree service to remove the trees. After all, you don't want to attempt a tree removal by yourself.
Most people are surprised to learn that plants can actually die if they're watered too much. A plant's species and age also affects how much you should water it. If you're unsure how much you should water your plants, do some research about the type of plants you have or hire a professional to help you.
Despite common belief, earthworms are actually good for your garden. In fact, if you see earthworms in your landscape, that means your soil is healthy and thriving. You can also ensure your soil is thriving by sprinkling a variety of things on it, such as compost and manure.


text:
Paramimus is een geslacht van vlinders van de familie dikkopjes (Hesperiidae), uit de onderfamilie Pyrginae.

Soorten
P. scurra (Hübner, 1809)
P. stigma (Felder & Felder, 1867)

Pyrginae

redpajama_set_name: RedPajamaWikipedia


Globalresearch.ca website is scored 610 1Pagerank.com points (1PRS) and has a global traffic ranking of 14,944 in the world. This website Google PageRank is 6 out of maximum 10 and its estimated worth is about $ 524,160.00. It has potential to earn online around $ 728.00 US Dollar daily. Globalresearch.ca was registered 1 decade 7 years ago (2001-05-28) and is hosted in Quebec, Montreal, Canada. As no recently active internet threats were reported, Globalresearch.ca is probably SAFE to browse.


We have even more sad news this Tuesday morning. Virginia Ashburn Collie, Class of February 1936, mother of Judith Collie Stafford of HA and G.C. Collie of VA, and mother-in-law of June Veneris Collie (Hampton HS - '62) of VA, passed away in Staunton on Thursday, October 13, 2011 at the age of 89.
Her younger sister, Elvira Ashburn Irby, Class of June 1937, passed away on May 15, 2010.
Thank you, Carol, for honoring my mother-in-law in your newsletter by including her obituary.
I found her high school picture and would appreciate if you could add that to the article you published.
Thank you so much, June - what a vivacious pretty girl she was! Again, you and your family have my sincerest condolences.
STAUNTON - Virginia A. Collie, 93, passed into the care of the Lord on Oct. 13, 2011, at Emeritus At Staunton.
She was a native of Newport News, Va., lived in Tabb for 40 years, and moved to Staunton, Va., in 2001, to be near her son's family. Virginia was a 1936 graduate of Newport News High School. She retired in 1981 as a secretary with the U.S. Coast Guard in Yorktown, Va. She was a 50 plus year member of the Warwick Chapter #43 Order of Eastern Star, Newport News, Va. She was a past member of Bethel Baptist Church, Tabb, Va., and a current member of West Waynesboro Church of Christ, Waynesboro, Va.
Virginia was preceded in death by her husband of 56 years, Grover Clark Collie Sr.; her parents, Issac Walter Ashburn Sr. and Daisy Hanna Ashburn; her brother, Issac W. (Pee Wee) Ashburn Jr.; and sister, Elvira A. Irby and her husband, Russell G. Irby.
Virginia is survived by her daughter, Judith Collie Stafford (Carl) of Keaau, Hawaii; son, G. C. Collie Jr. (June) of Verona, Va.; grandson, Jeffrey Clark Collie (Renee) of Gray, Tenn.; granddaughter, Jennifer Collie Von Moos (Steve) of Mt. Sidney, Va.; great-grandchildren, Troy Von Moos, Gabrielle Von Moos, Eileen Collie, Hank Collie, and Sam Collie; sisters-in-law, Dorothy Ashburn of Wake, Va., Lois Collie Haney of Newport News, Va.; and many nieces and nephews.
The family would like to express heartfelt thanks to Emeritus At Staunton and Hospice of the Piedmont for the care they gave their mother.
Visitation will be held from 7 to 8:30 p.m., Oct. 21, at Peninsula Funeral Home. The Rev. Franklin Hall will hold funeral services at 1 p.m., Oct. 22, at Peninsula Funeral Home. Burial will follow in Peninsula Memorial Park. Pallbearers will be Kevin Ashburn, Tommy Ashburn, Richard Lyeth, Tom Mylum, Mike Pelfrey, and John Powell.
Memorial contributions may be made to a favorite charity or West Waynesboro Church of Christ, 2212 Cortland Street, Waynesboro, VA 22980. View and post condolences on our online guestbook at dailypress.com/guestbooks.
Dearest 'Ginny' was "Mama #2" to me since I have any memory at all. Our families were neighbors on Huber Road in Newport News for the best growing up years a child can have! We share SO much love and wonderful memories. I thank the Lord for blessing my life with the Collie family! May He wrap you all in His great Love, Grace and Comfort.
We were saddened to hear of the death of your dear Mom and our friend. She was such a wonderful friend to our Mom, Mardee Kiser, when they were table buddies at Baldwin Park. May you find peace in knowing she is with her Lord.
Dear Corky, We are sorry to read about your Mom's death. Seeing her name brought back so many wonderful memories from my teen years. Our prayers and thoughts are with you and your family in the days ahead.
I met Virginia back in 1965, when I started working at the Coast Guard in Yorktown.
So sad to hear of her passing, she was such a wonderful and delightful person to be around.
I know she is still smiling, like she did every time you talked to her.
May God grant you the comfort and love you need. She was with you so many years, and now she is resting.
RIP Virginia, I have many good memories of you.
I'm so sorry to read Virginia's obituary in the newspaper. She was a true lady who was always friendly and caring. I worked with her at the Coast Guard in Yorktown for several years. I send my sincere condolences to the family.
Corkie, June, and family. Gary and I are sorry to learn of your Mother's death. She had a full and wonderful life and you have many happy memories to reflect on for the rest of yours.
Corky, I was so sorry to hear about Aunt Ginny. I wish I could have been there to see you but my husband's health is not the best right now. I have a lot of memories of Ginny & Grover. I did ask John to get your phone # for me. Our prayers are with all of you.
We remember Mrs. Collie from our early days in the Coast Guard. She was a gracious lady and always a pleasure to be around. Our condolences to her family.
We always enjoyed seeing Mrs. Collie at Bethel Baptist Church where we got to know her. We also enjoyed visiting her several times in Staunton and she will surely be missed by us. May God bless you at this time.
Our deepest sympathies are extended to Mrs. Collie's family and friends at this difficult time.


English is the lingua franca of today, indispensable in business, academia or travel. Don't fret, if you are a beginner. We will help you reach the intermediate skill level.
The English Language Course is addressed to beginners with no or very basic English skills. The aim of the program is to equip participants with elementary language skills useful in everyday life. During the course of study the participants will practice speaking, listening, reading, and writing, which will allow them to express themselves and communicate freely in English, in daily social situations.
The program offers a modern and practical approach to language learning, which ensures that course participants quickly improve their English skills. Classes take place Monday to Thursday, so on Fridays participants can either attend Polish Prep School or participate in other events at SWPS University. We use Oxford University Press Coursebooks (cost included in the course fee). Each group is taught by two teachers so that you can experience different accents and teaching methods. We conduct periodic assessments, which show participants their progress and indicate areas for improvement. The program ends with an official Graduation Ceremony.
There is also an option to combine the English Language Course with 120 hours (60 per semester) of Polish Language Course ».
Our English Language Course is addressed to beginners with no or very basic English skills.
Course participants, who by the end of the English Language Course achieve CEFR A2 level of competency and wish to further develop their English skills, may enroll in our English Preparatory Summer School » or the English Preparatory School ».
Upon successful completion of the English Language Course participants may enrol in our English Preparatory School, where they will further develop language skills to achieve CEFR B1-B2-C1 level of competency, allowing them to enrol in university programs taught in English. Additionally, at an extra fee, they can take international English exams, such as IELTS, TOEFL, FCE/ CAE or Lingua Skills.
SWPS University offers a unique English Preparatory School Program with classes taught by two teachers. During the program, one teacher focuses on speaking and writing skills while the other on reading and writing. These two approaches are well integrated and allow students to practice various modes of crucial communication skills. Additionally, students are exposed to different teaching methods and class management systems. The classes are varied and students learn something new every day. This innovative teaching methodology has proved to be very effective and appreciated by students.


text:
State the characteristics of a wave.
Calculate the velocity of wave propagation.
Figure 1. Waves in the ocean behave similarly to all other types of waves. (credit: Steve Jurveston, Flickr)
What do we mean when we say something is a wave? The most intuitive and easiest wave to imagine is the familiar water wave. More precisely, a wave is a disturbance that propagates, or moves from the place it was created. For water waves, the disturbance is in the surface of the water, perhaps created by a rock thrown into a pond or by a swimmer splashing the surface repeatedly. For sound waves, the disturbance is a change in air pressure, perhaps created by the oscillating cone inside a speaker. For earthquakes, there are several types of disturbances, including disturbance of Earth's surface and pressure disturbances under the surface. Even radio waves are most easily understood using an analogy with water waves. Visualizing water waves is useful because there is more to it than just a mental image. Water waves exhibit characteristics common to all waves, such as amplitude, period, frequency and energy. All wave characteristics can be described by a small set of underlying principles.
A wave is a disturbance that propagates, or moves from the place it was created. The simplest waves repeat themselves for several cycles and are associated with simple harmonic motion. Let us start by considering the simplified water wave in Figure 2. The wave is an up and down disturbance of the water surface. It causes a sea gull to move up and down in simple harmonic motion as the wave crests and troughs (peaks and valleys) pass under the bird. The time for one complete up and down motion is the wave's period [latex]{T}.[/latex] The wave's frequency is [latex]{f=1/T},[/latex] as usual. The wave itself moves to the right in the figure. This movement of the wave is actually the disturbance moving to the right, not the water itself (or the bird would move to the right). We define wave velocity [latex]{v_{\text{w}}}[/latex] to be the speed at which the disturbance moves. Wave velocity is sometimes also called the propagation velocity or propagation speed, because the disturbance propagates from one location to another.
MISCONCEPTION ALERT
Many people think that water waves push water from one direction to another. In fact, the particles of water tend to stay in one location, save for moving up and down due to the energy in the wave. The energy moves forward through the water, but the water stays in one place. If you feel yourself pushed in an ocean, what you feel is the energy of the wave, not a rush of water.
Figure 2. An idealized ocean wave passes under a sea gull that bobs up and down in simple harmonic motion. The wave has a wavelength λ, which is the distance between adjacent identical parts of the wave. The up and down disturbance of the surface propagates parallel to the surface at a speed vw.
The water wave in the figure also has a length associated with it, called its wavelength [latex]{\lambda},[/latex] the distance between adjacent identical parts of a wave. ( [latex]{\lambda}[/latex] is the distance parallel to the direction of propagation.) The speed of propagation [latex]{v_{\text{w}}}[/latex] is the distance the wave travels in a given time, which is one wavelength in the time of one period. In equation form, that is
[latex]{v_{\text{w}}=}[/latex] [latex]{\frac{\lambda}{T}}[/latex]
[latex]{v_{\text{w}}=f\lambda}.[/latex]
This fundamental relationship holds for all types of waves. For water waves, [latex]{v_{\text{w}}}[/latex] is the speed of a surface wave; for sound, [latex]{v_{\text{w}}}[/latex] is the speed of sound; and for visible light, [latex]{v_{\text{w}}}[/latex] is the speed of light, for example.
TAKE-HOME EXPERIMENT: WAVES IN A BOWL
Fill a large bowl or basin with water and wait for the water to settle so there are no ripples. Gently drop a cork into the middle of the bowl. Estimate the wavelength and period of oscillation of the water wave that propagates away from the cork. Remove the cork from the bowl and wait for the water to settle again. Gently drop the cork at a height that is different from the first drop. Does the wavelength depend upon how high above the water the cork is dropped?
Example 1: Calculate the Velocity of Wave Propagation: Gull in the Ocean
Calculate the wave velocity of the ocean wave in Figure 2 if the distance between wave crests is 10.0 m and the time for a sea gull to bob up and down is 5.00 s.
We are asked to find [latex]{v_{\text{w}}}.[/latex] The given information tells us that [latex]{\lambda=10.0\text{ m}}[/latex] and [latex]{T=5.00\text{ s}}.[/latex] Therefore, we can use [latex]{v_{\text{w}}=\frac{\lambda}{T}}[/latex] to find the wave velocity.
Enter the known values into [latex]{v_{\text{w}}=\frac{\lambda}{T}}:[/latex]
[latex]{v_{\text{w}}\:=}[/latex] [latex]{\frac{10.0\text{ m}}{5.00\text{ s}}}.[/latex]
Solve for [latex]{v_{\text{w}}}[/latex] to find [latex]{v_{\text{w}}= 2.00\text{ m/s}}.[/latex]
This slow speed seems reasonable for an ocean wave. Note that the wave moves to the right in the figure at this speed, not the varying speed at which the sea gull moves up and down.
A simple wave consists of a periodic disturbance that propagates from one place to another. The wave in Figure 3 propagates in the horizontal direction while the surface is disturbed in the vertical direction. Such a wave is called a transverse wave or shear wave; in such a wave, the disturbance is perpendicular to the direction of propagation. In contrast, in a longitudinal wave or compressional wave, the disturbance is parallel to the direction of propagation. Figure 4 shows an example of a longitudinal wave. The size of the disturbance is its amplitude X and is completely independent of the speed of propagation [latex]{v_{\text{w}}}.[/latex]
Figure 3. In this example of a transverse wave, the wave propagates horizontally, and the disturbance in the cord is in the vertical direction.
Figure 4. In this example of a longitudinal wave, the wave propagates horizontally, and the disturbance in the cord is also in the horizontal direction.
Waves may be transverse, longitudinal, or a combination of the two. (Water waves are actually a combination of transverse and longitudinal. The simplified water wave illustrated in Figure 2 shows no longitudinal motion of the bird.) The waves on the strings of musical instruments are transverse—so are electromagnetic waves, such as visible light.
Sound waves in air and water are longitudinal. Their disturbances are periodic variations in pressure that are transmitted in fluids. Fluids do not have appreciable shear strength, and thus the sound waves in them must be longitudinal or compressional. Sound in solids can be both longitudinal and transverse.
Figure 5. The wave on a guitar string is transverse. The sound wave rattles a sheet of paper in a direction that shows the sound wave is longitudinal.
Earthquake waves under Earth's surface also have both longitudinal and transverse components (called compressional or P-waves and shear or S-waves, respectively). These components have important individual characteristics—they propagate at different speeds, for example. Earthquakes also have surface waves that are similar to surface waves on water.
Check Your Understanding
1: Why is it important to differentiate between longitudinal and transverse waves?
PHET EXPLORATIONS: WAVE ON A STRING
Watch a string vibrate in slow motion. Wiggle the end of the string and make waves, or adjust the frequency and amplitude of an oscillator. Adjust the damping and tension. The end can be fixed, loose, or open.
Figure 6. Wave on a String
A wave is a disturbance that moves from the point of creation with a wave velocity [latex]{v_{\text{w}}}.[/latex]
A wave has a wavelength [latex]{\lambda},[/latex] which is the distance between adjacent identical parts of the wave.
Wave velocity and wavelength are related to the wave's frequency and period by [latex]{v_{\text{w}}=\frac{\lambda}{T}}[/latex] or [latex]{v_{\text{w}}=f\lambda}.[/latex]
A transverse wave has a disturbance perpendicular to its direction of propagation, whereas a longitudinal wave has a disturbance parallel to its direction of propagation.
1: Give one example of a transverse wave and another of a longitudinal wave, being careful to note the relative directions of the disturbance and wave propagation in each.
2: What is the difference between propagation speed and the frequency of a wave? Does one or both affect wavelength? If so, how?
1: Storms in the South Pacific can create waves that travel all the way to the California coast, which are 12,000 km away. How long does it take them if they travel at 15.0 m/s?
2: Waves on a swimming pool propagate at 0.750 m/s. You splash the water at one end of the pool and observe the wave go to the opposite end, reflect, and return in 30.0 s. How far away is the other end of the pool?
3: Wind gusts create ripples on the ocean that have a wavelength of 5.00 cm and propagate at 2.00 m/s. What is their frequency?
4: How many times a minute does a boat bob up and down on ocean waves that have a wavelength of 40.0 m and a propagation speed of 5.00 m/s?
5: Scouts at a camp shake the rope bridge they have just crossed and observe the wave crests to be 8.00 m apart. If they shake it the bridge twice per second, what is the propagation speed of the waves?
6: What is the wavelength of the waves you create in a swimming pool if you splash your hand at a rate of 2.00 Hz and the waves propagate at 0.800 m/s?
7: What is the wavelength of an earthquake that shakes you with a frequency of 10.0 Hz and gets to another city 84.0 km away in 12.0 s?
8: Radio waves transmitted through space at [latex]{3.00\times10^8\text{ m/s}}[/latex] by the Voyager spacecraft have a wavelength of 0.120 m. What is their frequency?
9: Your ear is capable of differentiating sounds that arrive at the ear just 1.00 ms apart. What is the minimum distance between two speakers that produce sounds that arrive at noticeably different times on a day when the speed of sound is 340 m/s?
10: (a) Seismographs measure the arrival times of earthquakes with a precision of 0.100 s. To get the distance to the epicenter of the quake, they compare the arrival times of S- and P-waves, which travel at different speeds. Figure 7) If S- and P-waves travel at 4.00 and 7.20 km/s, respectively, in the region considered, how precisely can the distance to the source of the earthquake be determined? (b) Seismic waves from underground detonations of nuclear bombs can be used to locate the test site and detect violations of test bans. Discuss whether your answer to (a) implies a serious limit to such detection. (Note also that the uncertainty is greater if there is an uncertainty in the propagation speeds of the S- and P-waves.)
Figure 7. A seismograph as described in above problem.(credit: Oleg Alexandrov)
longitudinal wave
a wave in which the disturbance is parallel to the direction of propagation
transverse wave
a wave in which the disturbance is perpendicular to the direction of propagation
wave velocity
the speed at which the disturbance moves. Also called the propagation velocity or propagation speed
the distance between adjacent identical parts of a wave
In the different types of waves, energy can propagate in a different direction relative to the motion of the wave. This is important to understand how different types of waves affect the materials around them.
[latex]{t=9.26\text{ d}}[/latex]
[latex]{f=40.0\text{ Hz}}[/latex]
[latex]{v_{\text{w}}=16.0\text{ m/s}}[/latex]
[latex]{\lambda\:=\:700\text{ m}}[/latex]
[latex]{d=34.0\text{ cm}}[/latex]
Previous: 16.8 Forced Oscillations and Resonance
Next: 16.10 Superposition and Interference

redpajama_set_name: RedPajamaCommonCrawl


Preliminary, detailed design and engineering services during construction of the underground tunnel approach structure (for TBM) of the new line C of the Metro in Rome. The structures of overall length in plan of about 180m consist in open U-shaped and an underground approach structure which are all composed mainly by retaining piles wall, prefabricated props and RC casted in place. The project includes also the predisposition for the launching structures for the TBM machine and a 22m concrete bridge above Tor Sapienza trench.


Includes Luke Campbell vs. Yvan Mendy II, Matty Askin vs. Lawrence Okolie, Sergey Kuzmin vs. David Price & Shakhram Giyasov vs. Julio Laguna.
2 Blu-Ray Set with JD Ringside Preview Show + Much More. Also: Alexander Povetkin vs. David Price, Ryan Burnett vs. Yonfrez Parejo & Anthony Crolla vs. Edson Ramirez.
Includes Dillian Whyte vs. Robert Helenius, Kal Yafai vs. Sho Ishida & Anahi Esther Sanchez vs. Katie Taylor.
Includes Dillian Whyte vs. Dereck Chisora, Luis Concepcion vs. Khalid Yafai, Callum Smith vs. Luke Blackledge & Scott Quigg vs. Jose Cayetano.
Includes George Groves vs. Martin Murray, Chris Eubank Jr. vs. Tom Doran & John Wayne Hibbert vs. Andrea Scarpa.
Includes Lee Selby vs. Eric Hunter, Matthew Macklin vs. Brian Rose, Jamie McDonnell vs. Fernando Vargas, George Groves vs. David Brophy, Conor Benn vs. Ivailo Boyanov & Ohara Davies vs. Andy Keates.
Includes Chris Eubank Jr. vs. Gary "Spike" O'Sullivan, Kevin Mitchell vs. Ismael Barroso, Tony Bellew vs. Mateusz Masternak & Luke Campbell vs. Yvan Mendy.
Includes Dave Ryan vs. John Wayne Hibbert, Dillan Whyte vs. Brian Minto, Louis Norman vs. Charlie Edwards & Reece Bellotti vs. Adel Hadjouis.
Includes Jorge Linares vs. Kevin Mitchell, Evgeny Gradovich vs. Lee Selby, & Anthony Joshua vs. Kevin Johnson.
Includes Kal Yafai vs. Isaac Quaye, Sam Eggington vs. Joseph Lamptey, Matthew Macklin vs. Sandor Micsko, Callum Smith vs. Olegs Fedotovs & Luke Campbell vs. Bechelaghem.
Includes Anthony Nelson vs. Jamie Wilson, Mustafa Chadlioui vs. Travis Dickinson, Jeff Saunders vs. Sandor Racz & Stephen Smith vs. Barrington Brown.
Includes Scott Quigg vs. Hidenori Otake, Anthony Joshua vs. Michael Sprott, James DeGale vs. Marco Antonio Periban & George Groves vs. Denis Douglin.
Includes Lee Selby vs. Josh Brunker, Tyler Goodjohn vs. Ricky Boylan & John Ryder vs. Theophilus Tetteh.
Includes Anthony Crolla vs. Gamaliel Diaz, Scott Cardle vs. Kirk Goodings, Anthony Joshua vs. Konstantin Airich & Sam Eggington vs. Denton Vassell.


- Tickets, please! Hop on board Viking City's amazing railroad. It'll take you anywhere you want to go! Your imagination is the limit. Just through the tunnel, over the bridge and into the world! Choo-choo! All toys from Viking Toys are especially designed to be both fun and safe for kids exploring the world with all their senses.
Railroad set 75 pcs. including 57 tracks, 2 train sets & 12 trees.


text:
Home / Spirulina, Chlorella, Algae and their effects on radiation
Spirulina, Chlorella, Algae and their effects on radiation
by Darren Craddock
In the mid 1990's a Russian patent was granted for the use of spirulina as a specific immune enhancer in the treatment of Children affected by the Chernobyl disaster. The studies conducted showed that close to 300 children in highly radioactive areas, developed chronic radiation sickness and raised levels of Immunoglobulin E (IgE). A group of some 30 plus children were given 20 Spirulina tablets per day (about 5 grams) for 45 days. This lowered the levels of IgE in the blood, which in turn, normalized allergic sensitivities in the body.
Doctors in the Chernobyl area, where radiation levels in Ukraine have been very high since the accident, have shown that daily spirulina consumption in 20 days lead to a 50% reduction in measurements of radiation in patients' urine. Testing done in 1990 in Belarus concluded that spirulina consumption promotes the evacuation of radioactive nucleotides from the body. Further studies showed that the consumption of spirulina also reduced the radiation load of radioactive nucleotides, strontium and cesium ingested in contaminated foods.
One of the main detrimental effects of radiation exposure is the destruction of the immune system. Both chlorella and spirulina seem to counteract these effects and rebuild the immune system. Chlorella has been shown in Japanese studies to also have anti tumor effects. When we consider that one of the prime effects of radiation exposure in the onset of cancer this is a very important piece of information.
When you also note the fact that the Enerfood formula is almost 50% composed of Spirulina, Chlorella, Kelp and Dulse, it becomes apparent why this formula will help not only nourish and cleanse you but also help protect you from radiation and help your body detox itself from the same. Japanese doctors noticed in studies how the consumption of chlorella helps increase the production of interferon, which itself slows the growth of cancer cells.
Enerfood also contains several milligrams of naturally occurring iodine, which is very important in the event of radiation exposure to protect the thyroid gland and other endocrine and breast tissue.


Ports are seeing larger-than-usual volumes of containers arriving for the Christmas period…and, in some cases are struggling with congestion. Meanwhile, Harvey is disrupting the flow of containers in the Gulf and beyond as ships that traditionally stop in a few ports, wait out the storm before entering Gulf ports. Both oil exports and imports are on hold. What is unusual with Harvey is the longer duration of the disruption – as the storm lingers until Thursday. Harvey is getting personal – my daughter is watching the waters rise by her house. We're hoping she doesn't lose her car and first floor.
More disruption news – the CSX rail melt-down continues – but will get better soon (or that is what is being said by management)!


text:
require "websocket-client-simple"
require "httparty"
require "benchmark"
require "pakyow/core"
require "pakyow/realtime"

ENV['SESSION_SECRET'] = '123'
HOST = "localhost"

N_CONNS = 1_000
N_CONNS_PER_PROCESS = 100
N_MSGS  = 100
N_APPS  = 10

PORT_START = 3000

$rd, $wr = IO.pipe

processes = []

begin
  N_APPS.times do |n_app|
    processes << Process.fork do
      Pakyow::App.define do
        configure do
          server.port = PORT_START + n_app
          logger.enabled = false
          realtime.registry = Pakyow::Realtime::RedisRegistry
        end

        routes do
          CHANNELS = 10.times.map { |n| "channel_#{n}" }

          get 'sub' do
            socket.subscribe(CHANNELS)
            send socket_connection_id
          end

          post 'pub/:msg' do
            msg = { msg: params[:msg] }
            chan = CHANNELS.sample

            N_MSGS.times do
              begin
                socket.push(msg, chan)
              rescue Exception => e
                puts e
              end
            end
          end
        end
      end

      Pakyow::App.run(:production)
    end
  end

  class WebSocketClient
    def initialize
      res = HTTParty.get("http://" + File.join(HOST + ":#{port}", "sub"))
      @key = res.body
      @cookie = res.headers["set-cookie"]

      if ws = socket
        ws.on :message do |msg|
          $wr << '.'
        end

        ws.on :open do
          # puts 'open'
        end

        ws.on :close do |e|
          # puts 'close'
        end

        ws.on :error do |e|
        end
      end
    end

    def shutdown
      socket.close
    end

    private

    def socket
      @socket ||= WebSocket::Client::Simple.connect("ws://" + HOST + ":#{port}/?socket_connection_id=#{@key}", headers: { 'COOKIE' => @cookie })
    end

    def port
      PORT_START + (0..(N_APPS - 1)).to_a.sample
    end
  end

  # let our app boot
  sleep 1

  # create clients
  (N_CONNS / N_CONNS_PER_PROCESS).times do
    processes << Process.fork do
      clients = []

      N_CONNS_PER_PROCESS.times do
        clients << WebSocketClient.new
      end

      sleep
    end
  end

  # wait for all clients to connect
  puts 'wait'
  sleep 15

  # push messages
  puts "Pushing #{N_MSGS} messages across 1 channel to #{N_CONNS} connections:"
  b = Benchmark.measure do
    HTTParty.post("http://" + File.join(HOST + ":#{PORT_START}", "pub", "hello"))
  end
  puts b

  puts "Waiting for message receipts:"
  b = Benchmark.measure do
    total = 0
    loop do
      begin
         total += $rd.read_nonblock(4096).length
      rescue IO::WaitReadable
        IO.select([$rd])
        retry
      end

      break if total == N_CONNS * N_MSGS
    end
  end
  puts b
  puts 'DONE'
ensure
  processes.each do |process|
    Process.kill("TERM", process)
  end
end


Deaths in the first month of life, which are mostly preventable, represent 46 per cent of total deaths among children under five. As mortality among children under five declines globally, deaths among these children are more and more concentrated in the first days of life. This makes focus on newborn care more critical than ever before. In 2016, an estimated 2.6 million children died in their first month of life, which is approximately 7,000 newborns every day. Most of these newborns died in the first week of life with approximately one million dying in their first day and another one million dying in the following six days. Despite ongoing challenges, major progress has been made in improving neonatal survival. Neonatal mortality is on the decline globally with the world's neonatal mortality rate falling from 37 deaths per 1,000 live births in 1990 to 19 per 1,000 live births in 2016. The result is a drop in neonatal deaths worldwide from 5.1 million in 1990 to 2.6 million in 2016. However, this decline of 49 per cent is slower than the rate of decline among children aged 1-59 months (62 per cent).
The large majority of newborn deaths (80 per cent) are due to complications related to preterm birth, intrapartum events such as birth asphyxia, or infections such as sepsis or pneumonia. Thus, targeting the time around birth with proven high impact interventions and quality care for small and sick newborns may prevent up to 80 per cent of newborn deaths. The "Every Newborn Action Plan" (ENAP) calls for an increased focus on the time around birth with targeted high impact interventions as a strategy for reducing not only newborn deaths but also maternal deaths and stillbirths, generating a triple return in investment.
A large majority of newborn deaths could be prevented with proven interventions around the time of birth and improved care for small and sick newborns. Deaths in the first 28 days of life account for an increasing share of under-five deaths, and they are declining at a slower rate than child deaths overall. Research conducted as part of the Every Newborn Action Plan and the 2014 Every Newborn Lancet series demonstrated that two key packages of interventions could prevent the majority of neonatal deaths.
Care around the time of birth could avert more than 40 per cent of neonatal deaths. Key interventions include care by a skilled birth attendant, emergency obstetric care, immediate care for every newborn baby (including breastfeeding support and clean birth practices such as cord and thermal care) and newborn resuscitation.
Care for small and sick newborns could avert 30 per cent of neonatal deaths. Key interventions include kangaroo mother care, prevention or management of neonatal sepsis, addressing neonatal jaundice and preventing brain damage after birth-related oxygen deprivation.
Skilled care at birth and postnatal checkups are essential to the well-being of both mother and newborn. Quality skilled care at birth would ensure that the newborn receives essential newborn care including thermal and cord care, and immediate breastfeeding. It also increases access to emergency care in the event of life-threatening complications. A newborn who is not breathing at birth will die within minutes if not properly cared for.
However, globally, in 2016 more than one in five births were not delivered by a skilled health personnel (22 per cent). This proportion increased to about half of all births in least developed countries. Newborns are most vulnerable during the first hours and days of life, yet this critical window is being missed. Data indicate that in least developed countries, only about half (54 per cent) of newborns are weighed at birth and a similar proportion (53 per cent) initiate breastfeeding immediately after birth.
The postnatal period is the time following delivery until six weeks after birth, and health checks during this time – especially the first two days after delivery – are essential. The WHO recommends postnatal care within 24 hours of birth, regardless of where the baby is born. Mothers and newborns should receive at least three additional postnatal care visits by a skilled provider, ideally on day 3 (48–72 hours after birth), between day 7 and day 14, and again 6 weeks after birth.
Postnatal care for the baby is an important opportunity to check for danger signs, such as insufficient feeding, fast breathing (a breathing rate of more than 60 per minute), severe chest in-drawing, lethargy, fever, low body temperature, or jaundice. At the same time, mothers can receive advice on how to identify and respond to these symptoms, as well as the benefits of exclusive breastfeeding and immunization.
Given the critical importance of essential newborn care and postnatal care for the baby, household survey programs such as DHS and MICS have recently included indicators to track the coverage of this important component of care for mothers and newborns. Globally, only 59 per cent of mothers and only one in three newborns (34 per cent) received a post-natal health check within the recommended time period.
A key strategy for ensuring a continuum of care from pregnancy through early childhood is integrating interventions into community-based programs and linking them to other services within health systems. In addition to the key interventions described above, adequate nutrition for pregnant and nursing women is essential to the well-being of both mother and child. The World Health Organization (WHO) and UNICEF recommend that care be provided by a skilled attendant during and immediately after birth, irrespective of where the birth takes place. When appropriate, home visits can provide effective care to infants and increase newborn survival. This strategy has shown positive results in high-mortality settings by improving essential newborn care practices and reducing newborn mortality.
Bhutta, Z.A., et al., for The Lancet Newborn Interventions Review Group and The Lancet Every Newborn Study Group, Can Available Interventions End Preventable Deaths in Mothers, Newborn Babies, and Stillbirths, and at What Cost?, The Lancet, published online 20 May 2014, accessed 26 August 2015.
Darmstadt, G. L., et al., Evidence-based, Cost-effective Interventions: How many newborns can we save?, Lancet, vol. 365, no. 9463, 12 March 2005, pp. 977–988, with updates. As published in: Committing to Child Survival: A promise renewed – Progress report 2012, UNICEF New York, 2012.
The Lancet Neonatal Survival Series, March 2005.
UNICEF's Multiple Indicator Cluster Surveys, Rounds 4, 5 and 6, UNICEF, New York, 2017.
United Nations Inter-agency Group for Child Mortality Estimation (IGME), Levels and Trends in Child Mortality: Report 2017, UNICEF, New York, 2017.
UNICEF/WHO, Skilled attendance at birth joint database, November 2017.
WHO/UNICEF Joint Statement, Home Visits for the Newborn Child: A strategy to improve survival, WHO, Geneva, 2009.


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Time is a highly important factor and it carries tremendous importance in the case of financial issues. What happens if you don't pay for unprotected bills? The bank reminds a person time and again that you have to clear your own dues. This is because the functions of banking have to balance the balances at the end of every month. Similarly, because of recession, financial firms are usually running out if period. They need to recover their fees in the shortest possible time period. The majority of firms have an idea that it will be impossible to recover all of the money from the clients. Within the year 2009, the situation had been very different. Money granting businesses were running after their particular customers for money. Collection groups were given the cilicism solar panel job of going to the customers and recovering the cash.
National Financial institution Limited was formed within 1893. Up until 1 Oct 1981, it continued in order to trade as The National Financial institution of Australasia Limited, in support of after the merger with the chitak solar panel Industrial Banking Company of Questionnaire transluce solar panel Limited did it become referred to as National Australia Bank.
Why do we obtain mentally tensed when we need to pay a bill? The reminders are usually even more irritating than the expenses. One gets really annoyed jelled solar panel when the bank staff the series of continuous calls. These types of calls never seem to prevent. It seems that the bank staff provides nothing else to do. They are simply interested in calling people. The particular frequency of these calls is really high because the bank definition and functions are involved about getting their cash. We get irritated because of reminder calls but the financial institution management faces severe pressure. They are doing business. They do not show distribute money for free. Therefore when everything fails, lawful actions are used. Nothing is over the law.
High Expenses: The cost of re-creating data from almost nothing is definitely estimated to cost regarding $6000 per megabyte. Think it or nor, is actually that expensive to start selectiveness solar panel from the beginning. There are a lot of costs that are put in recreating the data. Back to the lender example; imagine if you have a customer base of 5 mil people, having to call of these to come and give in their info again is expensive. One more expense is incurred in which the employees will demand to become paid overtime for rebuilding the data all over again. To add offend to injury, unhappy customers will file lawsuits contrary to the bank. Imagine a case exactly where all the 5 million customers all file lawsuits contrary to the bank. The bank will simply near down!
Compare the prepaid charge card method with cabling money from your bank for your recipient's. Most banks cost upwards of $20 to cable hundreds of dollars, including Dubai Bank, Abu Dhabi Industrial Bank, Commercial Bank associated with Dubai, HSBC, First Gulf of Mexico Bank, Citibank, National Financial institution of Abu Dhabi, and much pyrrhotite solar panel more. If you need to transfer money in order to Dubai and live close to Afghanistan, using the Shazada marketplace might work if you don't thoughts varying fees that you don't understand until you call or appear. If you want to be able to budget beforehand for your fees, and your receiver in Dubai does not brain using a debit card, the prepaid debit card could be your best bet.


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Do you love saving money? I know I do! The more expensive something is, the more I look for a deal. Unfortunately, there are some items that don't go on sale very often. Not to worry, though, there are ways of saving money shopping online that make up for it. If you trying to cut back on spending, we have this helpful list of of ideas for you!
You work hard for your money, so why not save as much as you can through smart shopping tips like these. You'll stretch your money further and feel more rewarded when you see how much you saved.
Keep a list handy when you're shopping. Don't forget to know your sizes, too! Create a wish list on websites you shop often. It makes it easy to come back to check for price decreases.
Look for the best deals online with Sello. It will connect with hot deals from merchants.
From food to furniture you can save money by shopping for right items at different times of the year. Thinking of a getting a new outdoor living furniture? Wait until early fall when garden and outdoor living items get discounted.
Stay in the know with merchants by getting their emails. They often send up special subscribers coupons. And, you'll be the first to hear about a new sale.
Watch the deals for free shipping. Depending on the merchant, some offer free shipping when you purchase a minimum amount. Or consider picking up your order at a local store branch.
Some stores allow multiple coupon codes to be applied or layered over a sale. You might even be able to layer it with a cash back offer through Ebates.


text:
class nSoundBag;

class NEIASOUNDSHARED_EXPORT nSoundStream : public QObject
{
    Q_OBJECT
    Q_PROPERTY(int channels READ channels)
    Q_PROPERTY(quint64 frames READ frames)
    Q_PROPERTY(int frequency READ frequency)
    Q_PROPERTY(nSoundFormat format READ format)
    Q_PROPERTY(bool suggestStreaming READ suggestStreaming)
public:
    explicit nSoundStream(QObject *parent = 0);

    virtual quint64 frames()=0;
    virtual int channels()=0;
    virtual int frequency()=0;

    virtual nSoundBag * createSoundBag(QObject * parent = 0);
    virtual nSoundFormat format() = 0;
    virtual bool suggestStreaming() = 0;

    virtual void rewind() = 0;
    virtual quint64 read(void* data, unsigned long frames) = 0;
signals:

public slots:

};

#endif // NSOUNDSTREAM_H


text:
9 Brygada Artylerii (II RP)
 9 Brygada Artylerii Przeciwpancernej


text:
Land Use Fellowship
Peer Exchange Panel
The Albany Avenue-Homestead Avenue corridor is one of the most highly travelled areas in Hartford, and is the primary transit route extending west from the Downtown into adjacent towns. Although accommodating a slightly lower average daily traffic than Albany Avenue's 17,000 vehicles per day, Homestead Avenue also experiences significant volume carrying 13,000 vehicles. Along this 1.5 mile corridor both streets are plagued by deficient pavement and sidewalks, unidentified and varied traffic lanes, and a diminishing retail presence to adequately serve the community.
This corridor spans the Clay Arsenal and Upper Albany neighborhoods, the former being one of the oldest neighborhoods in the City. Both neighborhoods have similar densities of about 21 units per acre and aging housing stocks that are generally in fair condition. According to their respective neighborhood plans and the City's Plan of Conservation and Development, priorities include enhancing the appearance, vitality, and redeveloping the corridor.
While Albany Avenue is characterized by a mix of residential, retail, and institutional uses, Homestead Avenue is comprised of primarily residential, industrial, and commercial uses. Located at the prominent intersection of Albany and Homestead Avenue is an antiquated state housing portfolio that is slated for redevelopment in the next 2 years.
Currently Albany Avenue is experiencing a sewer separation portfolio that will address deteriorating infrastructure and safety challenges, but has also negatively impacted businesses. The second phase of this portfolio has recently been approved and is scheduled to be started in spring 2013. Despite years of negotiating, planned streetscape improvements will not be initiated simultaneously but will occur subsequent to completed sections of sewer separation, at a cost of $14 million.
This corridor has several institutional, retail, and cultural assets along Albany Avenue as well as redevelopment parcels and industrial buildings on Homestead Avenue that are suitable for adaptive reuse. The challenge is to capitalize on assets and improvements along the corridor to establish a gateway to Hartford, a "main street" for the community, and create an environment that attracts economic investment. This corridor benefits from significant traffic and is surrounded by a stable population. Increasing foot traffic by making this area a stop instead of a drive through will positively impact the economic and social environment for businesses, the community, and the City.
Faculty Fellows Guest Experts
Project Report Panel Presentation
Corridor Redevelopment
Hartford Expects $500,000 For Albany Avenue Improvements (01/02/14)
North End Makeover: Vacant 1920s Apartment Buildings in Store For $20 Million Renovation-Housing (11/26/13)
Lessons from the Rose Fellowship: Pedro Segarra (11/15/13)
Group Targets Stretch of Albany Avenue for Big Improvements (02/01/13)
Critical land-use eyes on Hartford's Albany Ave. (01/31/13)
Hartford Mayor Pedro E. Segarra among Four U.S. Mayors Named as Fellows by the ULI Daniel Rose Center for Public Leadership In Land Use (09/14/12)
Anchorage: 2017 Land Use – Follow-Up Visit
Milwaukee: 2017 Economic Development – Peer Exchange Panel


1. The RBI issued the 5th bimonthly Monetary Policy Statement of FY18 on 6 Dec. What is the repo rate post the policy statement?
2. The govt has engaged which bank to enable online payments at 470 mandis integrated with the electronic National Agriculture Market (e-NAM)?
3. The London Mayor Sadiq Khan recently named who among the following Indians as its first International Ambassador?
5. Which of the following Indian sites has been ranked as the fifth best UNESCO World Heritage Site by travel portal TripAdvisor?
6. Which of the following is the best UNESCO World Heritage Site as per a recent survey conducted by travel portal TripAdvisor?
8. _______ has been named by the Time magazine as the person of the year 2017.
9. Who among the following has won the fifth Ballon d'Or 2017?


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Value for money from providers - this does not mean the cheapest care.
We also recommend that providers connect with other suppliers of services across the health and care marketplace to share best practice and identify opportunities to work together e.g. making use of each other's skill-sets, co-location of services, sharing costs, etc. This includes working with organisations in the voluntary sector that provide services such as advice, advocacy and information signposting, or can help with engaging with the wider community (including volunteers).


My whole life is like one consistent photoshoot but there are certain shoots that I will remember for the rest of my life. My Bonds Australia campaign was just that.
Being the face of such an iconic Australian brand was a real honor. I grew up wearing bonds, my sisters and mother wear bonds, its really been a part of my life for as long as I can remember but I never dreamt that I, myself, would be featured in one of their campaigns. I always admired Bonds Women like Miranda Kerr and Sarah Murdoch for their confidence, radiance and natural beauty.
Flying home to LA for this iconic shoot was unimaginably exciting, especially because the concept was so inline with my personal brand and beliefs- stripped back, minimal make up, simply natural and beautiful.
I hope you guys love the images from the campaign as much as I do.
Shop the Mash Up Women's Collection from my shoot here.
Wow, love these underwear a lot, they seem so comfy!
Gorgeous, simple pieces you're wearing! Love that!


Bed Bug Bites? Time to Call Island Pest Control.
Bed bugs can quickly wreak havoc on your ability to get a good night's sleep. If you end up getting bitten, it's time to find a dependable Hilton Head bed bug exterminator to help you deal with an infestation. In the meantime, knowing how to handle bed bug bites can help lower your risk of having a serious reaction to them. Keep the following in mind when your home has these pests.
Symptoms of bed bug bites typically include itching and redness where the bites occurred. You might have small bumps at these spots or flat welts that appear in groups or individually. You could also end up with complications, such as skin infections, if you scratch at these bites. Keep in mind that your symptoms can become more severe as you get more bed bug bites. In rare cases, more serious allergic reactions can occur in some people.
If you've been bitten by bed bugs, placing a warm washcloth on the affected areas might help relieve the itching. You might also benefit from using nonprescription antihistamine cream or pills to relieve the itching. Bed bug bites should go away on their own in a couple of weeks. If you experience more severe symptoms, such as shortness of breath, dizziness, fever, trouble swallowing or chest pain, seek medical care right away.
When you need a reliable Hilton Head bed bug exterminator to help you out, give Island Pest Control a call. We can help you eliminate bed bug infestations in your home, so you won't have to worry about any more bites.


Question: What is an RXDATA File?
Have you found, downloaded or received an RXDATA file, but don't know which software program is required to open it?
Before attempting to open an RXDATA file, you'll need to determine what kind of file you are dealing with and whether it is even possible to open or view the file format.
Answer: Files which are given the .RXDATA extension are known as RMXP Data files, however other file types may also use this extension. If you are aware of any additional file formats that use the RXDATA extension, please let us know.
The best way to open an RXDATA game file is to simply double-click it and let the default assoisated application open the file. If you are unable to open the file this way, it may be because you do not have the correct application associated with the extension to view or edit the RXDATA file.
Tip: Try to open the RXDATA file using a text-editor such as Notepad, as many file types contain simply contain unformatted plain-text and can viewed correctly using this method.
The file is made by RPG Maker XP. They store the data you enter in the program so that the game player can use the info. The best way to view what the file holds is to make a new game with RPG Maker XP and just slip that in replacing the data file they made, then go into the program, click database at the top, and see what changed. I'm not sure if there is a program out there that lets you just view the information. Text editors will let you see the info, but it's jumbled and mixed with useless symbols.


text:
package com.badlogic.gdx.utils.viewport;

import com.badlogic.gdx.graphics.Camera;
import com.badlogic.gdx.graphics.OrthographicCamera;
import com.badlogic.gdx.utils.Scaling;

/** A ScalingViewport that uses {@link Scaling#fit} so it keeps the aspect ratio by scaling the world up to fit the screen, adding
 * black bars (letterboxing) for the remaining space.
 * @author Daniel Holderbaum
 * @author Nathan Sweet */
public class FitViewport extends ScalingViewport {
	/** Creates a new viewport using a new {@link OrthographicCamera}. */
	public FitViewport (float worldWidth, float worldHeight) {
		super(Scaling.fit, worldWidth, worldHeight);
	}

	public FitViewport (float worldWidth, float worldHeight, Camera camera) {
		super(Scaling.fit, worldWidth, worldHeight, camera);
	}
}


text:
Q: Create video from list of images using ruby on rails Hi I want to create a video from list of images on ruby on rails. I have searched alot and all i found out was ffmeg, but i guess that's a command line tool. How do i create it using pure ruby on rails. Is there any gem or tutorial. Please Help.

A: Thanks to LordNeckbeard, i found this single command to convert images into video here ffmpeg
.
ffmpeg -framerate 1/3 -pattern_type glob -i '*.jpg' -c:v libx264 out.mp4

A: there are some gems that work as an interface between ruby and ffmpeg like https://github.com/streamio/streamio-ffmpeg.
There are some other few, try them out!

A: You can access command line through RoR.
result = %x[some command line call here]

What you would have to do is be sure you have the names path to your end result and confirm the return code from the command line call.

A: It seems like i will have to use commandline tool as i did'nt find any gem that does all this stuff for me.
install image magick
install ffmpeg
first convert all the jpg images into a gif file
convert -delay 250 -dispose Background  *.jpg images.gif

then convert that gif file into mp4 format
ffmpeg -f gif -i images.gif outfile.mp4

I would love to have a better answer than this.

redpajama_set_name: RedPajamaStackExchange


Design constraints for a self protecting GaN HFET and in general any group III V HFET are described. The design constraints depend on the separation between the gate and the drain and the thickness of the buffer material between the channel layer and the substrate. In one embodiment the buffer region is thinned to provide a preferred breakdown location.
This application claims priority to provisional application 61/256,139 filed Oct. 29, 2009 titled Dimensions and Characteristics for Overvoltage Tolerant HFETs.
The present invention relates to the area of fabrication of Gallium Nitride Heterogeneous Field Effect Transistors with components sized and located to ensure voltage breakdown occurs through the III-Nitride buffer to a silicon substrate rather than along the AlGaN barrier layer between the gate and drain or source.
A III-Nitride heterojunction transistor built on a silicon substrate has at least two failure modes where an excess voltage applied between the drain and the gate can cause an avalanche effect. The first mode is usually fatal to the device and that occurs when the conductive path is along the AlGaN Barrier layer. The second failure mode is more tolerable and is from the GaN channel through the III-Nitride Buffer to a substrate.
III-Nitride Heterojunction field effect transistors normally breakdown in the interface between the barrier layer and the insulation or passivation layer between the gate and the drain, and usually results in the destruction of the transistor. This problem is partially solved by restricting the operating range of the transistor, including transients, to stay within the breakdown limit. Alternatively, the transistor may be designed to allow safe breakdown of the transistor. Other partial solutions include purposely selecting the passivation or insulation layer or adding field plates to reduce the electric field between the source and drain and increasing the breakdown limit.
Typical III-Nitride Heterojunction field effect transistors have been fabricated on insulating substrates such as SiC, or sapphire, which are not suitable for conducting the breakdown current, especially at high speed. Typically, the voltage drop across a silicon substrate is small compared to the breakdown voltage for both conductive and high-resistance silicon substrates. For the more difficult high-resistance silicon substrate case, the estimated voltage drop is less than 20 V across a 6000 ohm-cm, 600 mm thick silicon substrate with a breakdown current of 10 microA/mm of gate width.
Prior art emphasis has been to prevent breakdown though the buffer layer in order to increase the transistor breakdown voltage. The structures were designed for preventing buffer breakdown in the transistor. For example, a GaN on silicon design for Nitronex RF transistors has a thin buffer ˜1.5 micrometer that breaks down at 450V. The breakdown at the surface for this device is less than 200V. Consequently an overvoltage causes a breakdown at the surface which destroys the device. Prior art design emphasis has been to increase the buffer thickness and material quality to increase the buffer breakdown voltage. One technique in the prior art has used separate devices such as Zener diodes to protect transistors or circuit.
Other researchers have reported the linear increase in substrate breakdown voltage with buffer layer thickness. Furukawa [N. Ikeda et. al, "High Power GaN HFETs on Silicon Substrate,", Furukawa Review, No. 34, p. 17-23, 2008] reported buffer breakdown voltage up to 1700 V with a slope of 326 V/micrometer. The substrate breakdown versus buffer thickness characteristic may be measured experimentally for each buffer design. The breakdown characteristic will depend on buffer parameters including III-Nitride composition and design (e.g., super lattice), buffer quality (e.g., growth temperature, and stoichiometry), and doping or trap concentration (e.g., carbon concentration).
There are prior disclosures affecting breakdown voltages in III-Nitride Heterojunction transistors, such as growing III-Nitride on conductive substrates to reduce field strengths in the gate region, including silicon substrates[e.g., U.S. Pat. No. 7,538,366 issued May 26, 2009]. There are prior disclosures adding a III-Nitride buffer layer under III-Nitride Heterojunction transistors, some for isolation [U.S. Pat. No. 6,534,801 issued Mar. 18, 2003]. There is a prior disclosure connecting a p-type GaN buffer layer beneath an HFET to reduce surface fields (RESURF) which improves gate-drain breakdown voltage [U.S. Pat. No. 6,100,549 issued Aug. 8, 2000] but without addressing breakdown to the substrate. In general, prior art designs a buffer layer to prevent voltage breakdown through the buffer layer [U.S. patent application Ser. No. 11/103,127, PatApp Publication 20060226413] rather than take advantage of it.
In one aspect of the invention, a method of fabricating an overvoltage tolerant HFET device, the method comprising: receiving an HFET device comprising a barrier layer disposed on a channel layer, the channel layer disposed on a buffer layer, the buffer layer disposed on a substrate; the HFET device having a surface breakdown field strength Es and a buffer breakdown field strength Ebar; wherein the buffer layer has a first thickness; disposing a source structure and a gate structure on the barrier layer; disposing a drain structure on the barrier layer a first distance from the gate structure; wherein the first distance multiplied by Es is greater than the first thickness multiplied by Ebar.
In another embodiment of the invention the barrier layer substantially comprises AlGaN, the channel layer substantially comprises GaN; and the buffer layer substantially comprises GaN. The substrate may substantially comprise silicon although other conductive substrate materials know to those of ordinary skill in the art may be used. In addition, the method may connect the substrate to a ground.
In another embodiment of the invention, the method further comprising exposing a portion of the buffer layer beyond a boundary of the source, drain and gate; then thinning the exposed buffer layer to a second thickness less than the first thickness; metalizing the thinned region of the buffer layer; and electrically connecting the thinned region of the buffer layer to the drain. The thinning of the buffer layer may be accomplished by etching.
In one aspect of the invention an HFET device comprising a source, a drain and a gate contacts defined within a boundary, a GaN channel layer and an AlGaN barrier layer between the GaN channel layer and the source, drain and gate contacts, a buffer layer disposed between the channel layer and a substrate with a portion exposed beyond the boundary, the buffer layer beyond the boundary thinned to a first thickness and electrically connected to the drain. In addition, the previous embodiment wherein the separation between the gate and the drain may be between 1 micrometers and 20 micrometers and the first thickness may be between 1.0 micrometer and 8 micrometers.
In one aspect of the invention another embodiment of an HFET device comprising source, drain and gate contacts disposed within a boundary on a AlGaN barrier layer, the barrier layer disposed on an GaN channel layer, the channel layer disposed on a substantially GaN buffer layer with a breakdown filed strength Ebar and the buffer layer disposed on a substantially conductive substrate, the gate and drain contacts separated by first distance and with a surface breakdown field strength Es, a first portion of the buffer layer beyond the boundary of the source, gate and drain contacts with a first thickness, the first thickness of the buffer layer multiplied by Ebar is greater than the first distance multiplied by Es.
In another aspect of the invention, the previous embodiment wherein Es may be between 60 and 100 v/micrometer, Ebar may be between 200 and 350 V/micrometer, the first distance may be between 1.0 micrometers and 20 micrometers and the first thickness may be between 1.0 micrometer and 8.0 micrometers. In addition, the previous embodiment may further comprise an electrical connection between the drain and the first portion of the buffer layer.
FIG. 1: III-Nitride heterojunction transistor on silicon substrate showing the two potential breakdown paths.
FIG. 2: III-Nitride heterojunction transistor on conductive substrate. Plot of measured drain leakage current (normalized to gate width) versus drain voltage, for 0.2 mm gate width III-Nitride HFETs. The plot demonstrates the increases of breakdown voltage with the increase of gate-drain spacing, Lgd.
FIG. 3: III-Nitride heterojunction transistor on conductive substrate. Plot of surface breakdown voltage at drain leakage current normalized to gate width of 10 microA/mm versus gate to drain spacing. The plots demonstrate control of the surface breakdown voltage with HFET gate-drain spacing, Lgd.
FIG. 4: Transistor characteristics of a 20 mm gate width III-Nitride heterojunction transistor on conductive substrate. HFET fabricated on a silicon substrate. The transistor has a maximum current of about 3.9 A and an on-resistance of less than 1.5 ohms.
FIG. 5: Leakage current versus Drain voltage for a 20 mm gate width III-Nitride HFET fabricated on a silicon substrate. The transistor has a leakage current of less than 0.5 mA at drain voltage of 900V. The substrate of the HFET was connected to the package and HFET source connection.
FIG. 6: III-Nitride heterojunction transistor on silicon substrate showing dimensions critical to the breakdown paths.
FIG. 7. III-Nitride heterojunction transistor on conductive substrate with recessed breakdown region.
In the following detailed description, only certain exemplary embodiments of the present invention are shown and described, by way of illustration. As those skilled in the art would recognize, the described exemplary embodiments may be modified in various ways, all without departing from the spirit or scope of the present invention. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not restrictive.
The problem of preventing an overvoltage from damaging or destroying the transistor through breakdown, between the gate and drain, of the interface between or along the barrier layer and the insulator or passivation layer is solved by designing the III-Nitride buffer layer to have a lower breakdown voltage than the breakdown voltage from the drain to the gate through the barrier layer.
The present invention is a III-Nitride hetero junction field-effect transistor built on a silicon substrate. In some embodiments the substrate is conductive or semi-conductive. The III-Nitride buffer layer between the silicon substrate and, for example, the channel layer of the device, is designed for a breakdown voltage less than the breakdown voltage of the transistor from gate to drain.
Not all breakdowns damage or destroy the transistor. An overvoltage breakdown in the transistor between the gate and the drain through the barrier layer or on the surface can damage the transistor. Breakdown through the insulating buffer layer between the drain and the silicon substrate can be repeated without damage, within limits. FIG. 1 shows the preferred embodiment with a AlGaN/GaN HFET with a GaN buffer 14 on a silicon substrate. The substrate may be conductive or semi-conductive in that it will conduct some current. The substrate may be embodied in silicon or other material able to conduct a current. FIG. 1 illustrates the two potential breakdown paths.
In FIG. 1 the substrate 12 may be suitably doped silicon and may be fabricated on a metal backside 10. The insulating buffer 14, sized for a specific breakdown voltage, is fabricated on the silicon substrate 12 of a III Nitride material. In one embodiment of the invention, the buffer 14 comprises substantially GaN. The remaining transistor elements include the channel layer 16 and the barrier layer 18. These layers may be fabricated with GaN and AlGaN respectively. The remaining transistor components are the drain 20, gate 26, source 28 an insulator 22. The transistor includes optional source field plate 24, an optional gate field plate 36, and an optional via 30 connecting the source 28 to the silicon substrate 12.
The overvoltage breakdown path 34 from the gate to the drain is the one that results in damage to the device. The alternate overvoltage breakdown path 32 is through the barrier 18, channel 16 and buffer 14 layers. This alternate overvoltage breakdown path 32 does not automatically result in damage to the transistor, although repeated breakdowns in the same region can cumulatively result in damage to the transistor.
FIG. 6 shows the critical buffer 14 thickness for the device in FIG. 1. The buffer layer 14 has a thickness 13 while the drain to gate breakdown is determined by the distance 35 between the drain and gate.
The buffer 14 breakdown voltage, BVb, increases with buffer thickness 13, tb, for a given buffer material. The typical effective buffer breakdown field for GaN HFET power transistors, Eb, is about 200 to 350 V/micrometer. This range is similar to the critical breakdown field of III-Nitride material. Experimentally, the dependence of BVb has a non-zero intercept, BVbs. The buffer breakdown voltage is BVb=Eb*tb+BVbs.
By designing the III-Nitride transistors for breakdown in the buffer 14 before the surface breakdown in the transistor 100, that is BVs is greater than BVb, the transistor 100 itself can be made resilient to overvoltage. Note the thickness of the Barrier layer 18 or the conductive channel 16 can not be varied for a desired breakdown voltage because the dimensions of these components are set to achieve particular performance criteria. The substrate 12 potential must allow breakdown in the buffer 14 first. Using a silicon substrate 12 below the transistor 100 and buffer layer 14 further increases the tolerance of the transistor 100 to overvoltages. Typically and without implying a limitation, the drain 20 is at a high positive potential. One preferred embodiment grounds the buffer 14. Alternatively, the substrate 12 can be set at the source 28 potential by connecting the source 28 to the silicon substrate 12 with a conductive via 30, as shown in FIG. 1.
One preferred embodiment of a transistor designed for a breakdown of 900 V, an Eb, of 240 V/micrometer has a buffer thickness 13 of 3.8 micrometers. For an Es of 85 V/micrometers, the gate-drain spacing must be greater than 10.6 micrometers.
In this preferred embodiment, a gate-drain spacing Lgd of 12 micrometers will result in an average surface breakdown voltage, BVs, of 1020 V. Furthermore, the surface breakdown voltage must be designed to exceed buffer breakdown over manufacturing process variation and over device operating temperature.
Devices with 0.2 mm gate width and 20 mm gate width were fabricated and tested. III-Nitride HFET devices with 20 mm gate width and fabricated on high resistivity silicon substrates demonstrated (1) useful switch performance, (2) controlling surface breakdown voltage with gate-drain spacing, and (3) stable repeated breakdown through the silicon substrate.
FIG. 2 shows the leakage current (normalized to the 0.2 millimenter gate width) versus drain voltage for 0.2 mm gate-width HFETs with a range of gate-drain spacings. The measurements were made on-wafer with the substrate floating to prevent buffer breakdown. With the substrate floating the gate to source voltage was set to −2 v to ensure the device was biased off.
As the gate-drain spacing 210 increases from 8 micrometers to 12 micrometers 220, the breakdown voltage BVs increases from 630 volts (215) to 1060 volts (225). FIG. 2 demonstrates the increase in surface breakdown voltage BVs with gate-drain spacing. Catastrophic failure of these transistors was observed during surface breakdown testing, even when limiting gate and drain currents.
FIG. 3 shows the linear increase of surface breakdown voltage BVs with increase of gate-drain spacing for the same design as in FIG. 2. FIG. 3 demonstrates the interrelationship between the surface breakdown voltage and HFET geometry. The slope and intercept of the line in FIG. 3 will depend on many device parameters, including gate length, lengths and heights of the optional gate and source field-plates 36 and 24 respectively in FIG. 1, III-Nitride epi design, and passivation. The breakdown voltage of the 0.2 mm HFET with a floating substrate was 1060V. When the substrate was grounded, the breakdown voltage decreased to about 900 V and the majority of drain leakage current was measured through the substrate.
A large HFET with 20 mm gate width was fabricated on a silicon substrate to confirm the desirable switching properties. The device was packaged in standard TO257 power switch packages. Die attachment in the package connected the silicon substrate to the package body. The package source pin was connected to the package body. For the common source measurements, both the source and substrate were connected to ground. FIG. 4 shows the curve tracer transistor characteristics of the 20 mm gate width HFET fabricated on a silicon substrate (as in FIG. 1). The HFET has a maximum drain current of at least 3.9 A and an on-resistance less than 1.5 ohms. For this, the gate to source was biased at 0, 0.5, 1.0, 1.5, 2.0 and 2.5 volts (curves 410, 420, 430, 440, 450 and 460 respectively). The drain current versus drain to source voltage was traced with the drain to source voltage increasing (e.g. upper curve of trace 460) and with the drain to source voltage decreasing (e.g. lower curve of trace 460). FIG. 5 shows the same HFET's drain leakage current of versus drain voltage but with the gate to source voltage set to −2 volts. The HFET shows a breakdown voltage (through the buffer) of about 900 V at a drain leakage current of 0.5 mA (25 microA/mm of gate width). This breakdown is much less than expected from surface breakdown. The package HFET breakdown voltage is close to the HFET breakdown voltage measured on-wafer with the substrate grounded, as expected. The curve tracer repeatedly broke down the HFET with no harm to the HFET. After breakdown testing, there was no observed change in the HFET transistor characteristics.
The technique described above was practiced with GaN materials. This is not to imply a limitation. The technique and method above may be practiced with other Group III materials and Group V materials. Typical Group III materials include Gallium and Indium. Group V materials include Nitrogen, Phosphorus, Arsenic, and Antimony.
Suitable substrate materials include by way of example and not limitation silicon and doped silicon, both non-conducting and conducting. Alternative substrate materials include conductive and high resistance GaAs, and conductive SiC.
In an alternate embodiment, the embodiment of FIG. 6 may be modified to include a recess in the buffer layer 14 as shown in FIG. 7. In this embodiment 700, the recess 741 may be etched to provide a breakdown path 32 that protects the breakdown path 34 between the drain and the gate. In this embodiment the buffer thickness is 713 and is shortest distance between the upper surface of the buffer layer and the substrate 12. The recess 741 may be partially filled with metal and electrically connected 739 to the drain although other connections are possible. In general, the recess 741 is electrically connected to the highest electrical potential in the device 700. The same materials and design features described for FIGS. 1 and 6 apply to embodiment 700 in FIG. 7. The capacitance between the electrical connection 739 and the substrate 12 may be controlled by minimizing the etch area for recess 741 and minimizing the area of metal in the recess 741.
The technique describe above may be practiced with other lateral devices which have a high resistance buffer between the high voltage terminal and the substrate. The technique may be practiced on layers grown by homo-epitaxy or hetero-epitaxy. The homo-epitaxy can be practiced with GaN grown on conductive GaN substrates, SiC grown on SiC conductive substrates, and GaAs grown on GaAs conductive substrates. The hetero-epitaxy can be practiced with SiC on silicon substrates and GaAs on silicon substrates. The substrate and any interfacial nucleation layer must be able to conduct the breakdown current such that the resistive voltage drop is small compared to the breakdown voltage or predictable. A highly conductive substrate is undesirable for fast switching device because the conductive substrate increase the capacitance from the high voltage terminal to ground.
The buffer breakdown electric field will be similar to the critical breakdown field for a given type buffer material and can be used for choosing initial estimates of required buffer thickness. For example known critical breakdown fields for buffer materials are: GaN 45 Volts/micrometer, 4H SiC 220 Volts/micrometer, and GaN 200 Volts/micrometer. The surface breakdown field can be estimated using physical device simulation using material properties. Physical simulation may be use for an initial estimate of the gate to drain spacing Lgd 35 required for BVs 34 greater than BVb 32 in FIG. 6. Since the accuracy of the physical simulator is limited by parameters not necessarily well known such as density of surface state traps, it may be necessary to experimentally verify dimensions or allow for the uncertainties in the simulation.
While the invention has been described in connection with certain exemplary embodiments, it is to be understood by those skilled in the art that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications included within the spirit and scope of the appended claims and equivalents thereof.
the first distance multiplied by Es is greater than the first thickness of the substantially GaN buffer layer multiplied by Ebar.
2. The HFET of claim 1 wherein the-substantially conductive substrate is disposed on a metal layer.
3. The HFET of claim 1 wherein the substantially conductive substrate comprises silicon.
4. The HFET of claim 1 wherein the the substantially conductive substrate is electrically connected to the source contact.
5. The HFET of claim 1 further comprising an electrical connection between the drain and the first portion of the substantially GaN buffer layer.
6. The HFET of claim 5 wherein the thickness of the substantially GaN buffer layer at the electrical connection between the drain and the first portion of the substantially GaN buffer layer is less than a thickness of the substantially GaN buffer layer within the boundary.
Huili Xing, et al., "High Breakdown Voltage AlGaN-GaN HEMTs Achieved by Multiple Field Plates", IEEE Electron Device Letters, Apr. 2004, vol. 25, No. 4, p. 161-163.
M. Hikita, et al., "AlGaN/GaN Power HFET on Silicon Substrate with Source-Via Grounding (SVG) Structure", IEEE Transactions on Electron Devices, Sep. 2005, vol. 52, No. 9, p. 1963-1968.
N. Ikeda, et. al, "High Power GaN HFETs on Si Substrate,", Furukawa Review, 2008, No. 34, p. 17-23.
W. Saito, et al., "600V AlGaN/Gan Power-HEMT: Design, Fabrication and Demonstration on High Voltage DC-DC Converter", Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International, Dec. 2003, p. 598-601.
W. Saito, et al., "High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior", IEEE Transactions on Electron Devices, Dec. 2003, vol. 50, No. 12, p. 2528-2531.


text:
The Umbrella Academy Parody Is Brilliant | Don't Miss It
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Netflix's show The Umbrella Academy season 1 came out earlier this year. And it already divided the fans into two teams, one who really loved it while the others who didn't like it. Well,…
The Umbrella Academy Season 2 | What We Know So Far
Talha Waseem	 Nov 6, 2019 0
After an exciting first season, fans have started demanding a second season. Netflix Original series The Umbrella Academy season 2 is already being filmed. Just like for any other hit TV…
Aidan Gallagher Is Excited For "My Chemical Romance's Return"
Momina Wijdan	 Nov 4, 2019 0
Aidan Gallagher, a rising singer, musician and the amazing number 5 from The Umbrella Academy, is truly inspired by My Chemical Romance. In fact, My Chemical Romance has a great impact on…
Umbrella Academy's Robert Sheehan & Justin H. Min Surprise Fans at New York Comic Con
Nashmia Adnan	 Oct 7, 2019 0
The Umbrella Academy graced our Netflix screens this year. We were introduced to an interesting Hargreeves family of dysfunctional superheroes trying to stop the apocalypse. The people loved…
Remember the Hargreeves From The Umbrella Academy? It's Their Birthday Today!
It's October 1st! Do you know what that means? Everyone is already obsessing over Halloween. Plus, it's also the fictional Hargreeves sibling's birthday. Yes, the seven siblings who were…
The Umbrella Academy Season 2 Shoot Begins In Toronto
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The shoot for The Umbrella Academy Season 2 is finally on floors. The cast of the knockout superhero drama has flown to Toronto to begin shoot for the upcoming season. In April, Netflix…
Aidan Gallagher Releasing "For You" On 7th June
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Aidan Gallagher Releases The Umbrella Academy Inspired Song Titled Time
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The records consist of files containing the Vice-Chancellor's correspondence with University staff, Council members and other institutions. Papers on the establishment and development of departments and faculties, University committees and boards, meetings, invitations and acceptances. There are also speeches, lectures, reports, honours, appointments and awards. The series also includes some tapes and photographs.
N.B. Restricted access to some files.
Paper for the Council regarding "planning".
Programme of seminar "Jean Philippe Rameau and the French Classical Opera"


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Academic All-Star: Luke von Borstel
Published: Jun. 1, 2021 at 12:44 PM EDT
MASSENA, N.Y. (WWNY) - This week's Academic All-Star is Luke von Borstel, a senior at Massena Central School.
Luke is the class valedictorian and has been a member of Interact Club, National Honor Society, Spanish National Honor Society, and marching band
He's also a four-sport athlete. Because of the unusual athletic seasons imposed by the pandemic, he was able to play soccer, basketball, football, and lacrosse this year.
He plans to attend the University of St. Joseph in West Hartford, Connecticut, where he will study to become a physician's assistant and play lacrosse.
Watch his interview with Diane Rutherford above.
Academic All Star: Laura Zehr
Career-tech All-Star: Coral Lee Israel
Arts All-Star: Abigail Flint


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Feb 5: Lunch and Learn
Feb 12: Lecture and Musical Performance
The Black Manifesto
Mandela Visits Riverside
Black History Month is an annual celebration of achievements by African Americans and a time for recognizing their central role in U.S. history. Join us as we celebrate the contributions of Black artists, activists, and leaders this month and every month.
Join us for worship at 11:00 am ET on Sunday mornings during Black History Month for music, sermons, and other worship experiences that center Black musicians, artists, and leaders.
Sunday, February 5 | Preacher: Rev. Adriene Thorne
Sunday, February 12 | Preacher: Rev. Adriene Thorne
Sunday, February 19 | Preacher: Alisa Castilla
Sunday, February 26 | Preacher: TBD
Lunch and Learn with Dr. Willie Jennings
Sunday, February 5 | 1:00 p.m. | 9T
The Education Commission invites you to a Lunch and Learn in room 9T with special guest Dr. Willie Jennings in conversation on his book, "After Whiteness: An Education In Belonging," moderated by Dr. Andrea White. After Whiteness explores several themes that we have been in conversation about here at Riverside. Jennings says, "Theological education has always been about formation: first of people, then of communities, then of the world. If we continue to promote whiteness and its related ideas of masculinity and individualism in our educational work, it will remain diseased and thwart our efforts to heal the church and the world. But if theological education aims to form people who can gather others together through border-crossing pluralism and God-drenched communion, we can begin to cultivate the radical belonging that is at the heart of God's transformative work."
A Lecture and Musical Performance
Sunday, February 12 | 12:30 p.m. | 9T
In celebration of Black History Month, join us for a two-part event with a presentation from Rev. Dr. Arnold Isidore Thomas, followed by a musical performance from Irwin Reese and Julia Bady.
Black History at The Riverside Church
On Sunday May 4, 1969, black activist James Forman stormed the pulpit of The Riverside Church, demanding that white churches and synagogues pay $500,000,000 in reparations. Forman, the former Executive Secretary of the Student Nonviolent Coordinating Committee (SNCC), was one of the key leaders of the 1964 Freedom Summer, a project to register as many black voters in Mississippi as possible, as well as the 1965 Selma to Montgomery marches, infamously put down with billy clubs and tear gas on the Edmund Pettus Bridge, an event now known as Bloody Sunday.
On the morning of May 4, as ministers processed through the nave to the hymn "When Morning Gilds the Skies", Forman climbed the steps to the chancel and began to read The Black Manifesto, a series of demands endorsed by the National Black Economic Development Conference. The Black Manifesto argued that white churches and synagogues of the United States must pay for their part – direct and indirect – in the historical subjugation of black people if they wished to maintain their moral authority. It cited their reliance on the patronage of wealthy whites enriched by slavery and the violent expropriation of resources from communities of color.
Before Forman could begin to explain the reason for the service interruption, the organist drowned out his words with the hymn "May Jesus Christ be Praised", as preaching minister Rev. Dr. Ernest Campbell led a silent walkout of the majority of the congregation.
This event threw The Riverside Church and the concept of reparations into the national spotlight. The Riverside Church and other faith groups struggled to respond. The intellectual struggle over reparations continues today.
In late June of 1990, between negotiations with the South African government, Mandela made a visit to the United States on a campaign to raise money for the ANC and to encourage the international community to continue economic sanctions until the agreement to end apartheid had been reached. Mandela was greeted by an estimated 750,000 people at a ticker tape parade through the Canyon of Heroes in Lower Manhattan, and given The Key to the City of New York by its first black mayor, David Dinkins (whose call for a police oversight Civilian Complaint Review Board would cause a massive police riot two years later). The next day, on June 21st, before speeches at Yankee Stadium, the United Nations, and a townhall at City College with Ted Koppel, Mandela attended an interfaith "Service of Thanksgiving for Nelson Mandela" at The Riverside Church.