text:
\section{Introduction}

Electron spins in semiconductor quantum dots are a promising platform for quantum computation \cite{Loss:1998p120,Russ:2017p393001,Zhang:2018p32}. Quantum dots formed in Si/SiGe heterostructures have many advantages, including high electron mobility, low natural abundance of spinful isotopes in Si, and compatibility with industrial Si-based fabrication techniques \cite{Zwanenburg:2013p961}. Such devices were initially realized in doped heterostructures \cite{Klein:2004p4047}, but the transition to undoped, fully gated structures \cite{Lu:2011p043101,Borselli:2011p063109,Wang:2013p046801,Wu:2014p11938} has led to improved charge stability. Undoped Si/SiGe heterostructures have now hosted many qubit architectures, with recent demonstrations of single dot qubits such as the Loss-DiVincenzo qubit \cite{Kawakami:2016p11738,Yoneda:2018p102,Zajac:2018p439,Watson:2018p633,Mi:2018p599,Xue:2019p021011}; double dot qubits such as the singlet-triplet qubit \cite{Maune:2012p344,Wu:2014p11938,Reed:2016p110402}, quantum dot hybrid qubit \cite{Kim:2014p70,Thorgrimsson:2017p32}, and valley qubit \cite{Schoenfield:2017p64,Mi:2018p161404}; and triple dot qubits such as the exchange-only qubit \cite{Eng:2015p4}.

Two-qubit gates in semiconductor quantum dots have been demonstrated through use of the exchange coupling in Loss-DiVincenzo qubits \cite{Nowack:2011p1269,Brunner:2011p146801,Veldhorst:2015p410,Zajac:2018p439,Watson:2018p633,Xue:2019p021011,Hendrickx:2019preprint} and through use of the capacitive coupling in singlet triplet qubits \cite{Shulman:2012p202,Nichol:2017p1} and charge qubits \cite{Li:2015p7681}. For double dot qubits, the capacitive interaction arises when the individual qubit states, $|0\rangle$ and $|1\rangle$, have different admixtures of the eigenstates of electron position, $|L\rangle$ and $|R\rangle$. This difference can be described as an effective dipole moment for each qubit, leading to a dipole-dipole interaction between the qubits. The maximum such interaction energy between two double dot qubits is equal to the shift in detuning experienced by one double dot qubit due to the complete transfer of an electron between dots in the neighboring qubit. This interaction energy can be obtained by measuring the shift in the polarization line of one double dot due to a change in polarization of the other double dot \cite{VanWeperen:2011p030506,Yu:2016p324003,Ward:2016p16032,Zajac:2016p054013}. The resulting energy shift is the coupling term, $g$, in the Hamiltonian for two double dot qubits that interact capacitively. We refer to this energy from here on as the capacitive coupling.

In this work, we report measurements of the capacitive coupling in a quadruple quantum dot device in undoped Si/SiGe. We tune the device to a regime of strong intra-double dot tunnel coupling ($t > 1$ GHz in both double dots), to match the conditions of typical double dot qubit experiments, and measure the capacitive coupling to be $20.9 \pm 0.3$ GHz. In this regime, we demonstrate a fitting procedure with which we obtain, from a 2D slice through the quadruple dot charge stability diagram, all the parameters in the 4D Hamiltonian for capacitively coupled charge qubits. We investigate the tunability of the capacitive coupling \emph{in situ}, using barrier gate voltages to change the inter-double dot (inter-DD) and intra-double dot (intra-DD) capacitances in the quadruple dot array, and find the capacitive coupling changes over a range of 15-32 GHz, in a way that trends positively with inter-DD capacitance and negatively with intra-DD capacitances. We interpret the range of inter-dot capacitances observed here in terms of changes in inter-dot spacing, and estimate that the changes we make to the barrier gate voltages shift the positions of the quantum dots by tens of nm. We provide a simple model based on the electrostatics of a system of charge nodes joined by capacitors to illustrate how the capacitive coupling should depend on inter-DD and intra-DD capacitances, and we find that the expected trends from the model agree well with the trends in the measured data.

\begin{figure*}[t]
\includegraphics[width=1.0\textwidth]{figure-fab_meas-v1.pdf}
\caption{
(a) False-colored SEM micrograph of a device lithographically identical to the device measured here. Plunger (P) and barrier (B) gates used in the tuning of the 4-dot array are labeled. The charge sensor currents $I_{L}$ and $I_{R}$ are also labeled. (b) Higher magnification image of the accumulation layer pattern showing the dimensions of the plunger gate array. (c) Schematic of the model of the four-dot array as a network of charge nodes and capacitors. $C_{i}$ is the sum of capacitances to dot $i$, and $C_{ij}$ is the capacitance between dots $i$ and $j$. Capacitances to reservoirs and gates are not shown. (d)-(f) Charge stability diagrams for each nearest-neighbor pair of dots in the array. The indicated energy scales correspond to the dot charging energies $E_{Ci}$ and the electrostatic coupling energies $E_{Cij}$. $E_{Ci}$ range from 2.4 to 4.4 meV, and $E_{Cij}$ range from 120 to 680 $\mu$eV, depending on the tuning. The data shown in (e) are a weighted sum of transconductance signals from the two charge sensor amplifiers: $\beta_{L} dI_{L} / dV_{P1} + \beta_{R} dI_{R} / dV_{P4}$, where $\beta_{L(R)}^{-1}$ is the range of the signal from the left (right) amplifier. Here, $\beta_{L} = 1.9 \times 10^{4}$ and $\beta_{R} = 78$. The difference in signal range is due to the difference in amplification schemes for the two charge sensors, as described in the main text.
}
\label{fig:fab_meas}
\end{figure*}

\section{Results and Discussion}

\subsection{Fabrication and measurement}

The device we study is composed of six quantum dots, four arrayed linearly in the main channel and two in separate channels used to sense the electron occupation of the array. A false-colored SEM micrograph of a lithographically identical device is shown in Fig.~\ref{fig:fab_meas}(a). The device is an accumulation-mode overlapping gate device with three layers, one each for screening, accumulation, and tunnel barrier control (see Suppl. Mat. for further details \cite{SM}). Quantum dot chemical potentials and inter-dot barrier potentials are primarily controlled by the plunger (P) and barrier (B) gates, respectively. The plunger gates are 80 nm wide with 130 nm pitch, as shown in a higher magnification image of the accumulation layer pattern in Fig.~\ref{fig:fab_meas}(b).

Measurements are performed in a dilution refrigerator with a base temperature below $20$ mK. The device is tuned to form a quantum dot under each plunger gate in the main channel, resulting in a linear array of four quantum dots. Two quantum dots are also formed in the auxiliary channels as charge sensors,  with the left (right) charge sensor mostly sensitive to double dot 1-2 (3-4). The left charge sensor is connected to a cryogenic amplifier similar to that in Ref. \cite{Tracy:2016p063101}; the right charge sensor current is amplified only at room temperature. Measurements of the charge occupation of the four-dot array are performed by modulating a plunger gate above each double dot and measuring the charge sensor currents with lock-in amplifiers at those modulation frequencies. The quantum dots are set to desired electron occupations by finding the last electron transitions in the dots and then counting up on the charge stability diagram. The tunnel couplings between dots are controlled with barrier gate voltages. $V_{B2}$ and $V_{B4}$ are generally tuned to be much more positive than $V_{B3}$, so that the tunnel couplings within each double dot are large while the tunnel coupling between the double dots is negligible. Thus, the significant coupling between the double dots is capacitive.

\begin{figure}[t]
\includegraphics[width=0.48\textwidth]{figure-g_meas-v1.pdf}
\caption{
Measurement of the capacitive coupling energy between two double dots from the shift of the polarization line. The arrows indicate the magnitude of the polarization line shift, and the dashed lines indicate where the lines would be for $g=0$. For this dataset, $g= 28.4 \pm 0.4$ GHz.  $V_{P1}$ ($V_{P4}$) is used to sweep $\epsilon_{L}$ ($\epsilon_{R}$). The data shown is a weighted sum of transconductance signals from the two charge sensor amplifiers: $\beta_{L} dI_{L} / dV_{P1} + \beta_{R} dI_{R} / dV_{P4}$, with $\beta_{L} = 1.6 \times 10^{4}$ and $\beta_{R} = 68$.
}
\label{fig:g_meas}
\end{figure}

Fig.~\ref{fig:g_meas} shows a measurement of the capacitive coupling between the double dots. This measurement is done by measuring a 2D slice through the 4D quadruple dot charge stability diagram. By simultaneously sweeping the detuning of both double dots, we observe the shift in the polarization line of each double dot due to the change in polarization of the other double dot. The magnitude of the shift is extracted by fitting line cuts of each polarization line, finding the center point in each line cut, and fitting the curve describing the shift of the center points in detuning space. The functional form used to fit this curve is a hyperbolic tangent (tanh), based on the expected form for the polarization of a double dot as a function of its detuning \cite{Dicarlo:2004p1440}. The amplitude of this tanh function in units of detuning energy, indicated by the arrows in Fig.~\ref{fig:g_meas}, is equal to the capacitive coupling, $g$, which for the measurement in Fig.~\ref{fig:g_meas} is found to be $28.4 \pm 0.4$ GHz.

At each tuning of the barrier gate voltages, the detuning lever arms for both double dots are measured by sweeping the temperature and measuring the broadening of the polarization lines \cite{Simmons:2009p3234}, which also enables an extraction of the electron temperature $T_{e}=155$ mK. We also measure the individual capacitive elements of the quadruple dot system, shown schematically in Fig.~\ref{fig:fab_meas}(c), including $C_{i}$, the total capacitance to dot $i$, and $C_{ij}$, the capacitance between dots $i$ and $j$. These capacitances are obtained from the corresponding self-charging energies $E_{Ci}$ and electrostatic coupling energies $E_{Cij}$, which can be read from the charge stability diagrams by the dimensions labeled in Fig.~\ref{fig:fab_meas}(d)-(f) \cite{SM}.

The double dots are both tuned to be near the (3,2)-(2,3) polarization line, which is the charge qubit regime with the first valley shell filled in all dots. Using this electron configuration enables the detection of transitions of the inner two dots (2 and 3), which is necessary to measure the electrostatic energies indicated in Fig.~\ref{fig:fab_meas}(d)-(f). Since these dots are not directly coupled to reservoirs, their transitions require cotunneling through the outer dots (1 and 4), the rate of which becomes suppressed when the outer dots are empty and their chemical potentials lie well above the chemical potentials of the inner dots \cite{Nazarov:2009}.

\subsection{Capacitive coupling at strong inter-dot tunnel couplings}

The capacitive coupling measurement shown in Fig.~\ref{fig:g_meas} is taken with low intra-DD tunnel couplings. From lack of tunnel broadening of the polarization lines, we determine $t_{12},t_{34} < k_{B}T_{e}$ for that measurement, where $k_{B}T_{e} \sim 3$ GHz. Suitable values of the tunnel couplings and the capacitive coupling are important for enabling high-fidelity single- and two-qubit gates. To enable good single-qubit control, the intra-DD tunnel couplings should typically be on the order of $\sim$1-10 GHz between dots in charge \cite{Petersson:2010p246804,Shi:2013p075416,Kim:2015p243}, singlet-triplet \cite{Maune:2012p344,Wu:2014p11938}, quantum dot hybrid \cite{Kim:2014p70,Cao:2016p086801,Thorgrimsson:2017p32}, and valley \cite{Schoenfield:2017p64,Mi:2018p161404} qubits. Furthermore, to couple the qubits purely capacitively, the tunnel rate between dots 2 and 3 should be low so that the exchange coupling between dots 2 and 3 is negligible and the probability of state leakage across B3 during control and readout of the qubits is low.

Taking these considerations into account, we look at an example configuration with strong intra-DD tunnel coupling and weak inter-DD tunnel coupling and measure the capacitive coupling of the system. We set $V_{B3}$ to achieve a low inter-DD tunneling rate $t_{23}\lesssim 1$ kHz, measured by varying the lock-in frequency and tracking the visibility of the polarization line between dots 2 and 3. We raise $V_{B2}$ and $V_{B4}$ until $t_{12},t_{34} > k_{B}T_{e}$, determined by observing tunnel broadening of the intra-DD polarization lines. In this regime, we measure $g = 20.9 \pm 0.3$ GHz. This is reduced compared to the measurement with weaker intra-DD tunnel coupling shown in Fig.~\ref{fig:g_meas}, where $g = 28.4 \pm 0.4$ GHz, but is still expected to be strong enough to perform high fidelity two-qubit gates for quantum dot hybrid qubits \cite{Frees:2018preprint}.

Fig.~\ref{fig:g_meas_theory}(a) shows a 2D slice of the quadruple dot stability diagram at this configuration. As explained above, the shift of the polarization lines in energy corresponds to the magnitude of the capacitive coupling. Additionally, at this tuning where intra-DD tunnel couplings are high, each shifted polarization line acquires an increased curvature due to the tunnel broadening of the opposite polarization line. By adopting a more sophisticated model that incorporates the effects of tunnel coupling, electron temperature, and capacitive coupling, we can fit this curvature to extract more information about the Hamiltonian of the quadruple dot system. Using this analysis, the 2D dataset shown in Fig.~\ref{fig:g_meas_theory}(a) yields all the parameters in the Hamiltonian for two coupled charge qubits in the absence of noise, given a known detuning lever arm. The procedure is as follows. We write the 4D Hamiltonian,
\begin{multline}
H = \frac{\epsilon_{L}}{2} \sigma_{z} \otimes I + t_{L} \sigma_{x} \otimes I + \frac{\epsilon_{R}}{2} I \otimes \sigma_{z} + t_{R} I \otimes \sigma_{x} \\
+ \frac{g}{4} (I - \sigma_{z}) \otimes (I - \sigma_{z}),
\end{multline}
where $\epsilon_{L(R)}$ is the detuning in the left (right) double dot, $t_{L(R)} = t_{12(34)}$, $g$ is the capacitive coupling, $I$ is the identity operator, and $\sigma_{i}$ are the usual Pauli operators. From $H$, we obtain the eigenstates $| \psi_{i} \rangle$ as functions of $\epsilon_{L}$, $\epsilon_{R}$, $t_{L}$, $t_{R}$, and $g$. Then, extending the method in Ref.~\cite{Dicarlo:2004p1440} to a two-qubit system, we calculate the expectation value of the charge polarization of each double dot, averaged over a Maxwell-Boltzmann distribution:
\begin{multline}
P_{L(R)}(\epsilon_{L}, \epsilon_{R}; t_{L}, t_{R}, g) = \\
 \frac{1}{Z} \sum_{i=1}^{4} \langle \psi_{i} | \sigma_{z}^{L(R)} | \psi_{i} \rangle e^{-E_{i} / k_{B} T_{e}},
\end{multline}
where $\sigma_{z}^{L} = \sigma_{z} \otimes I$, $\sigma_{z}^{R} = I \otimes \sigma_{z}$, and Z is the partition function. This expression yields two functions, one for the charge polarization of each double dot as a function of $\epsilon_{L}$ and $\epsilon_{R}$ and parametrized by $t_{L}$, $t_{R}$, and $g$. Fitting each of these functions to the shifted polarization line data in Fig.~\ref{fig:g_meas_theory}(a) yields the theoretical stability diagram shown in Fig.~\ref{fig:g_meas_theory}(b) \cite{SM}. From the fit we extract the parameters $t_{L} = 5.8 \pm 0.4$ GHz, $t_{R} = 7.0 \pm 0.5$ GHz, and $g = 20.9 \pm 0.3$ GHz, allowing us to write out the complete 4D Hamiltonian for coupled charge qubits at every point in Fig.~\ref{fig:g_meas_theory}(a).

\begin{figure}[t]
\includegraphics[width=0.48\textwidth]{figure-g_meas_theory-v1.pdf}
\caption{
(a) A 2D slice through the quadruple dot stability diagram, taken using $V_{P1}$ ($V_{P4}$) to sweep $\epsilon_{L}$ ($\epsilon_{R}$), with $t_{23} \lesssim 1$ kHz and $t_{12},t_{34} > k_{B}T_{e}$. The data shown is a weighted sum of transconductance signals from the two charge sensor amplifiers, with $\beta_{L} = 4.0 \times 10^{4}$ and $\beta_{R} = 1.4 \times 10^{2}$. (b) A theoretical fit to the data based on the 4D Hamiltonian for two coupled charge qubits. Hamiltonian parameters extracted from the fit are listed at bottom.
}
\label{fig:g_meas_theory}
\end{figure}

\subsection{Controlling the capacitive coupling with barrier gate voltages}

Comparison of the measurements in Fig.~\ref{fig:g_meas} and Fig.~\ref{fig:g_meas_theory}(a) shows how a change of barrier gate voltages that increases the intra-DD tunnel couplings results in a significant decrease in the capacitive coupling ($\sim25\%$). We further investigate the tunability of the capacitive coupling in response to the barrier gate voltages $V_{B2}$, $V_{B3}$, and $V_{B4}$, by measuring the coupling energy as well as all the parameters of the capacitance network shown in Fig.~\ref{fig:fab_meas}(c) as a function of these voltages.

Fig.~\ref{fig:g_C_tuning} shows the results of the measurements, where we observe a range of capacitive couplings from 15-32 GHz in response to changes in inter-dot barrier gate voltages. Each of these barrier gate voltages tunes the capacitance between the dots straddling that barrier. In this way, we investigate the relationships among capacitive coupling, inter-DD capacitance, and intra-DD capacitances. In Fig.~\ref{fig:g_C_tuning}(a) and (c), the middle barrier voltage, $V_{B3}$, is varied with $V_{B2}$ and $V_{B4}$ held fixed. Panel (c) shows how increasing $V_{B3}$ increases the capacitive coupling, $g$. Panel (a) shows the effect of $V_{B3}$ on all the inter-dot capacitances in the system. Increasing $V_{B3}$ increases the inter-DD capacitance ($C_{23}$) and also decreases both intra-DD capacitances ($C_{12}$ and $C_{34}$). These changes in capacitance are a result of the dots' position shifting in the array. Making $V_{B3}$ more positive decreases the potential between dots 2 and 3, resulting in these dots shifting closer together (increasing $C_{23}$) and farther from their outer neighbors, 1 and 4 (decreasing $C_{12}$ and $C_{34}$). The effects of these changes in gate voltage on the coupling $g$ follow the intuition for a dipole-dipole interaction, where a decrease in the spacing between the dipoles causes an increase in the interaction energy.

In Fig.~\ref{fig:g_C_tuning}(b) and (d), $V_{B3}$ is held fixed and $V_{B2}$ and $V_{B4}$ are varied. Panel (d) shows how increasing $V_{B2}$ and $V_{B4}$ decreases $g$. Panel (b) shows the effect of these barrier voltages on the inter-dot capacitances. Here, the change in inter-DD capacitance is small, while the intra-DD capacitances change significantly in response to $V_{B2}$ and $V_{B4}$. Making these voltages more positive decreases the potential in the middle of each double dot, shrinking the spacing between dots in each pair (increasing $C_{12}$ and $C_{34}$). The effects of these changes in gate voltage on the coupling $g$ again follow the intuition for a dipole-dipole interaction, where here a decrease in intra-DD spacing corresponds to a decrease in the size of the dipoles, which decreases the interaction energy.

To estimate the shift in quantum dot positions associated with the changes in capacitance observed in Fig.~\ref{fig:g_C_tuning}(a) and (b), we model a pair of neighboring dots as two conducting discs beneath a conducting plane, which incorporates the screening effects from the overlapping gate metal \cite{SM}. We assume a dot diameter equal to the plunger gate width of 80 nm. The capacitance in this model follows an approximate $1/d^{3}$ dependence, where $d$ is the center-to-center distance between the dots. Varying $d$ from 85 to 175 nm, to cover the range over which this spacing could vary in an array of 80 nm dots with 130 nm gate pitch, we calculate inter-dot capacitances ranging from 1-10 aF, in good agreement with the measured capacitances in Fig.~\ref{fig:g_C_tuning}(a) and (b), which range from 2-13 aF. These numbers also suggest that the variations in inter-dot capacitance observed in Fig.~\ref{fig:g_C_tuning} are the result of significant shifts in dot position, on the order of tens of nm, with a dot pitch on the low $C_{ij}$ end ($\sim1$ aF) of $\sim170$ nm and a dot pitch on the high $C_{ij}$ end ($\sim10$ aF) of $\sim90$ nm.

To further understand the contributions that the inter- and intra-DD capacitances make to the capacitance coupling, we model the quadruple dot system as a network of four charge nodes joined by capacitors. The capacitive coupling creates a detuning shift in one double dot due to the change in polarization of the other double dot. We extend the analysis from Ref. \cite{vanderWiel:2003p1} from two to four quantum dots and calculate this detuning shift to obtain an analytical expression for capacitive coupling as a function of the capacitive elements shown in Fig.~\ref{fig:fab_meas}(c) (details in Suppl. Mat. \cite{SM}):
\begin{equation}
g = \frac{e^{2}}{|\mathbf{C}|} C_{23}(C_{1}-C_{12})(C_{4}-C_{34})
\end{equation}
where $e$ is the electron charge and $|\mathbf{C}|$ is the determinant of the capacitance matrix. We can simplify the expression by approximating all $C_{i}=C$. Then, assuming inter-dot capacitances are small compared to total dot capacitances, we can series expand in the ratios $c_{ij}=C_{ij}/C$, finding, to second order:
\begin{equation}
g / E_{C} = c_{23} - c_{23}c_{12} - c_{23}c_{34},
\label{eq:gfunction}
\end{equation}
where $E_{C}=e^{2}/C$ is the single-dot charging energy. The approximate expression in Eq.~\ref{eq:gfunction} provides intuition for the relative contributions that the inter-DD and intra-DD capacitances make to the capacitive coupling and how the capacitive coupling should trend with each. The leading contribution of the inter-DD capacitance ($c_{23}$) is first order, while the leading contributions of the intra-DD capacitances ($c_{12}$ and $c_{34}$) are second order. The capacitive coupling depends positively on inter-DD capacitance but negatively on intra-DD capacitances. This agrees with the correlations we observe between inter-dot capacitances and capacitive coupling, as shown in Fig.~\ref{fig:g_C_tuning}, where changes in inter-DD (intra-DD) capacitance correlate positively (negatively) with changes in capacitive coupling.

\begin{figure}
\includegraphics[width=0.48\textwidth]{figure-g_C_tuning-v1.pdf}
\caption{
(a) Inter-dot capacitances as a function of the middle barrier gate voltage, $V_{B3}$, with $(V_{B2},V_{B4}) = (120,70)$ mV. (b) Inter-dot capacitances as a function of the average of the two outer barrier gate voltages, $V_{B2}$ and $V_{B4}$, with $V_{B3} =$~0 mV. The gate voltage values for all points are, from left to right: $(V_{B2},V_{B4}) = (120,70)$, (140,90), and (155,90) mV. (c) Capacitive coupling as a function of $V_{B3}$. Inset: false-colored SEM micrograph highlighting the gate whose voltage is varied. (d) Capacitive coupling as a function of $V_{B2}$ and $V_{B4}$. Inset: false-colored SEM micrograph highlighting the gates whose voltages are varied. For all plots, linear fits to the data are shown as a guide for the eye.
}
\label{fig:g_C_tuning}
\end{figure}

\subsection{Discussion}

The results in Fig.~\ref{fig:g_C_tuning} demonstrate a large degree of control over the capacitive coupling using the inter-dot barrier voltages to change the inter-dot capacitances in the array. When this device is tuned to a realistic regime for performing two-qubit experiments, where intra-DD tunneling coupling is high ($t_{12},t_{34} > 1$ GHz) and the inter-DD tunnel coupling is very low ($t_{23} \lesssim 1$ kHz), we find a capacitive coupling of $\sim 20$ GHz, which corresponds to a fast 2-qubit entangling time of $\sim 20$ ps when both qubits have equal admixtures of $|L\rangle$ and $|R\rangle$ states. Based on the trends observed in Fig.~\ref{fig:g_C_tuning}(c), if an even higher capacitive coupling rate were desired, we expect the coupling could be increased further in this device by raising $V_{B3}$ to increase $C_{23}$ while raising $V_{B2}$ and $V_{B4}$ to maintain strong intra-DD tunnel couplings. This would raise the inter-DD leakage rate across B3, but for many semiconductor qubits, this rate could be brought into the MHz range without surpassing the operation rate of the qubits themselves. The ability to raise $C_{23}$ while keeping $t_{23}$ low could also be enhanced further by making the barrier potential between dots 2 and 3 higher and narrower, which could be achieved by a straightforward lithographic change of decreasing the gap between plunger gates P2 and P3. We note also that a proportional decrease of all distances in the dot array leads to increased values of $g$, which is consistent with the larger values of $g$ ($\sim50$ GHz) that have been measured in a dot array with a smaller (100 nm) pitch \cite{Zajac:2016p054013}.

\section{Conclusion}

We measure the capacitive coupling and all inter-DD and intra-DD capacitances in a linear array of four quantum dots in the few-electron regime at a range of tunings. We tune to a regime of strong intra-DD tunnel coupling and measure the capacitive coupling to be $g = 20.9 \pm 0.3$ GHz, which is strong enough to be able to implement high-fidelity two-qubit operations. We demonstrate a fitting procedure to extract all the parameters of the 4D Hamiltonian for two capacitively coupled charge qubits from a 2D slice through the quadruple dot stability diagram. We tune the capacitive elements in the quadruple dot array with inter-dot barrier gate voltages and see the capacitive coupling change over a range of 15-32 GHz. We provide a simple model based on a system of charge nodes joined by capacitors to illustrate how capacitive coupling should depend on the inter-DD and intra-DD capacitances of the system and find the model agrees well with the trends in the measured data.

\section*{Acknowledgements}

Research was sponsored in part by the Army Research Office (ARO) under Grant Number W911NF-17-1-0274 and by the Vannevar Bush Faculty Fellowship program under ONR grant number N00014-15-1-0029. We acknowledge the use of facilities supported by NSF through the UW-Madison MRSEC (DMR-1720415). The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the Army Research Office (ARO), or the U.S. Government. The U.S. Government is authorized to reproduce and distribute reprints for Government purposes notwithstanding any copyright notation herein.

\beginsupplement

\section*{Supplementary Information}

\section{Device fabrication and packaging}
The device is fabricated using undoped Si/SiGe heterostructures grown by chemical vapor deposition. A 3~$\mu$m thick linearly graded Si$_{0.7}$Ge$_{0.3}$ relaxed buffer substrate is grown on top of a Si wafer. The buffer is chemically and mechanically polished before the growth of a 170-375 nm thick Si$_{0.7}$Ge$_{0.3}$ layer, a 9 nm thick Si quantum well, a 30 nm thick Si$_{0.7}$Ge$_{0.3}$ spacer, and a 1 nm thick Si cap \cite{Deelman:2016p224}. The layers are measured using x-ray diffraction and x-ray reflectivity to confirm the composition and thickness respectively \cite{Richardson:2017p02B113}.

A mesa for each quantum dot device is etched using a CHF$_{3}$ plasma. Ohmic contacts are implanted with $^{31}$P$^{+}$ dopants and activated with an anneal. A dielectric stack of Al$_{2}$O$_{3}$ is deposited with atomic layer deposition in two steps to form a terraced structure with a 5 nm gate oxide in the region of quantum dot formation and a 20 nm field oxide over the bulk of the ohmic reservoirs. After deposition, the oxide is annealed in forming gas at 450$^{\circ}$C for 15 min. Bond pads, interconnects, and ohmic metal are made with Pd deposited in an e-beam evaporator. The bond pads for each device are made with metallic shorting lines to protect against electrostatic discharge (ESD) during subsequent e-beam lithography and wire bonding. The quantum dot gates are fabricated with e-beam lithography, using PMMA 495 A4 resist and depositing Al in an e-beam evaporator. After liftoff of each Al layer, the sample is cleaned in a 250W downstream O$_{2}$ plasma asher for 10 min, both to remove resist residue and to enhance the native AlO$_{x}$ of the gates. After fabrication, the device is wire bonded to a (grounded) printed circuit board (PCB), and the on-chip shorting wires are cut with a diamond scribe attached to a micromanipulator. The PCB is then loaded into a dilution refrigerator at controlled humidity using ESD-safe tools wherever possible. Once at base temperature, the sample is illuminated with an infrared laser diode for $\sim$10 sec, which is observed to lower threshold voltages on the gates by several hundred mV.

\section{Detuning lever arms}
\label{sec:leverarms}

As described in the main text, the detuning lever arms are obtained from measurements of thermal broadening of the polarization lines. The detuning lever arms for both double dots are fit together using the measurement of the capacitive shift of the polarization lines. These capacitive shifts are equal for both double dots, in units of energy. In units of voltage, the magnitudes of the shifts differ due to the difference in lever arms for each double dot. Therefore, when fitting the thermal broadening data for detuning lever arms, we impose the additional constraint that the ratio of the lever arms should equal the observed ratio of the polarization line shifts in units of voltage. The uncertainty of the lever arms is calculated from the variance of the fit.

This procedure is repeated to measure the lever arms at every tuning of the barrier gate voltages. Since the detuning is the difference of the chemical potentials between two dots (e.g., $\epsilon_{12} = \mu_{1} - \mu_{2}$), the detuning lever arm for a particular gate is the difference between the lever arm for that gate and each dot, e.g., $\alpha_{P1}^{(\epsilon)} = \alpha_{P1}^{(1)} - \alpha_{P1}^{(2)}$. The detuning lever arm should therefore decrease when the two dots are pulled closer together and the action of a single gate on the two dots differs less. This effect is shown in Fig.~\ref{fig:lever_arms}, where detuning lever arms are plotted as a function of intra-DD capacitance for each double dot. The lever arms decrease by up to $36\%$ as intra-DD capacitance is increased, which confirms the importance of measuring the detuning lever arm after every change in intra-DD coupling so as to obtain accurate measurements of the double dot energetics at each tuning.

\begin{figure}
\includegraphics[width=0.48\textwidth]{figure-lever_arms-v1.pdf}
\caption{
Detuning lever arms for (a) P1 and (b) P4 as a function of the intra-DD capacitance of the (a) left and (b) right double dot.
}
\label{fig:lever_arms}
\end{figure}

\section{Fitting for two-qubit Hamiltonian parameters}

\begin{figure}
\includegraphics[width=0.48\textwidth]{figure-g_t_fit-v1.pdf}
\caption{
The location of the (a) left and (b) right double dot polarization line as it shifts due to the capacitive coupling. The dashed red and dotted yellow lines are the fits to the location data. (c) The full dataset from Fig. 3(a) in the main text with the fits to the polarization line locations overlaid.
}
\label{fig:g_t_fit}
\end{figure}

We fit the functions $P_{L(R)}$ (Eq. 2 of the main text) to the data using the following procedure. $P_{L(R)} \in [-1,1]$ are treated as functions of $\epsilon_{L}$ and $\epsilon_{R}$ and parametrized by $t_{L}$, $t_{R}$, and $g$ ($T_{e} = 155$ mK from the measurement described in section \ref{sec:leverarms}). $P_{L(R)} = 0$ corresponds to equal occupancy of both dots in the left (right) double dot, so we fit the roots of $P_{L(R)}$ to the locations of the left (right) polarization line in the data in Fig. 3(a) in the main text. The polarization line locations are obtained by fitting the derivative of a tanh function \cite{Dicarlo:2004p1440} to linecuts through the left (right) polarization lines and extracting the center points in $\epsilon_{L(R)}$. The resulting fit traces for each polarization line are shown in Fig.~\ref{fig:g_t_fit}(a) and (b) and overlaid on the 2D dataset in panel (c). The curves here are qualitatively similar to the tanh function that describes the charge polarization of a double dot as a function of its detuning \cite{Dicarlo:2004p1440} but in fact have a more complicated analytical form that depends on all the parameters of the coupled two-qubit system. Here only the curvature of the polarization lines is used in the fit, and the widths of the lines, which are also determined by $t_{L}$, $t_{R}$, and $T_{e}$, are not used. Including the widths as extra constraints would decrease the uncertainty of the fitted $t_{L}$ and $t_{R}$, but would add a significant computational overhead, so only the curvature fits in Fig.~\ref{fig:g_t_fit}(a) and (b) are used to extract the Hamiltonian parameters $t_{L}$, $t_{R}$ and $g$.

The theoretical stability diagram shown in Fig. 3(b) of the main text incorporates the fitted polarization line curves with widths that are determined by the combined broadening from $t_{L}$, $t_{R}$, and $T_{e}$. The theoretical stability diagram has a background of zero, in contrast to the measured data, which has a background set by the transconductance of the charge sensors. We do not fit the background, since all the relevant information in the dataset is contained in the locations and dimensions of features in $\epsilon_{L}$ and $\epsilon_{R}$, and not in the absolute scale of the color (z) axis.

\section{Obtaining capacitances}

We measure the quantum dot charging energies $E_{Ci}$ and the electrostatic coupling energies $E_{Cij}$ by taking charge stability diagrams and measuring the offsets of the transition lines indicated in Fig. 1(d)-(f) in the main text. Specifically, we obtain $E_{Ci}$ from the distance in voltage space between the $N_{i}=2\rightarrow3$ and $N_{i}=3\rightarrow4$ transition lines and obtain $E_{Cij}$ from the distance in voltage space between the $N_{i}=2\rightarrow3$ transition line with $N_{j}=2$ and the $N_{i}=2\rightarrow3$ transition line with $N_{j}=3$, using appropriate lever arms. ($E_{Cij}=E_{Cji}$, so the two distances corresponding to this energy are averaged.) To fit lines to the transitions, we define a window around each transition of interest, use a peak-finding algorithm to generate a scatter plot within that window, and fit a line to the peak locations. We use the slopes of these lines to convert detuning lever arms to the lever arms between gates and their underlying dot chemical potentials. We use the offsets between the lines to obtain the electrostatic energies $E_{Ci}$ and $E_{Cij}$. The uncertainties of these energies are propagated from the uncertainties of the detuning lever arms and the variance of the linear fits to the transition lines.

\begin{figure}
\includegraphics[width=0.48\textwidth]{figure-C_network-v1.pdf}
\caption{
Diagram of the network of charge nodes joined by capacitors that we use to model the quadruple quantum dot array
}
\label{fig:C_network}
\end{figure}

We obtain the capacitances $C_{i}$ and $C_{ij}$ from the measured electrostatic energies using the following procedure. The full model of the network of charge nodes we use is shown in Fig.~\ref{fig:C_network}, with voltage sources from gates $V_{gi}$ and ohmic reservoirs $V_{oi}$ included. We calculate the electrostatic energy of the system \cite{vanderWiel:2003p1},
\begin{equation}
U=\vec{Q} \cdot \mathbf{C}^{-1} \vec{Q},
\label{eq:U}
\end{equation}
using the definitions
\begin{equation}
\begin{split}
&\vec{Q} =
\begin{pmatrix}
N_{1}e + C_{o1}V_{o1} + C_{g1}V_{g1} \\
N_{2}e + C_{g2}V_{g2} \\
N_{3}e + C_{g3}V_{g3} \\
N_{4}e + C_{o2}V_{o2} + C_{g4}V_{g4}
\end{pmatrix}
, \\
&\mathbf{C} =
\begin{pmatrix}
C_{1} & -C_{12} & 0 & 0 \\
-C_{12} & C_{2} & -C_{23} & 0 \\
0 & -C_{23} & C_{3} & -C_{34} \\
0 & 0 & -C_{34} & C_{4}
\end{pmatrix}
,
\end{split}
\label{eq:matrices}
\end{equation}
where $N_{i}$ is the number of electrons on node $i$. The resulting expression for $U$ contains terms proportional to $N_{i}^{2}$ and $N_{i}N_{j}$, whose coefficients equal $E_{Ci}$ and $E_{Cij}$, respectively. This yields the formulas for the energies:
\begin{equation}
E_{C1} = \frac{e^{2}}{|\mathbf{C}|} (C_{2}C_{3}C_{4} - C_{4}C_{23}^{2} - C_{2}C_{34}^{2}),
\end{equation}
\begin{equation}
E_{C2} = \frac{e^{2}}{|\mathbf{C}|} (C_{1}C_{3}C_{4} - C_{1}C_{34}^{2}),
\end{equation}
\begin{equation}
E_{C3} = \frac{e^{2}}{|\mathbf{C}|} (C_{1}C_{2}C_{4} - C_{4}C_{12}^{2}),
\end{equation}
\begin{equation}
E_{C4} = \frac{e^{2}}{|\mathbf{C}|} (C_{1}C_{2}C_{3} - C_{3}C_{12}^{2} - C_{1}C_{23}^{2}),
\end{equation}
\begin{equation}
E_{C12} = \frac{e^{2}}{|\mathbf{C}|} (C_{3}C_{4}C_{12} - C_{12}C_{34}^{2}),
\end{equation}
\begin{equation}
E_{C23} = \frac{e^{2}}{|\mathbf{C}|} (C_{1}C_{4}C_{23}),
\end{equation}
\begin{equation}
E_{C34} = \frac{e^{2}}{|\mathbf{C}|} (C_{1}C_{2}C_{34} - C_{34}C_{12}^{2}),
\end{equation}
where
\begin{multline}
|\mathbf{C}| = C_{1}C_{2}C_{3}C_{4} - C_{3}C_{4}C_{12}^{2} - C_{1}C_{2}C_{34}^{2} \\
- C_{1}C_{4}C_{23}^{2} + C_{12}^{2}C_{34}^{2}
.
\end{multline}
These formulas can be rearranged to give the capacitances in terms of the measured energies:
\begin{equation}
C_{1} = e^{2} \frac {E_{C2}} {E_{C1}E_{C2} - E_{C12}^{2}},
\end{equation}
\begin{equation}
C_{2} = e^{2} \frac {E_{C1}E_{C2}^{2}E_{C3} - E_{C12}^{2}E_{C23}^2}{E_{C2}(E_{C12}^{2} - E_{C1}E_{C2})(E_{C23}^{2} - E_{C2}E_{C3})},
\end{equation}
\begin{equation}
C_{3} = e^{2} \frac {E_{C2}E_{C3}^{2}E_{C4} - E_{C23}^{2}E_{C34}^2}{E_{C3}(E_{C23}^{2} - E_{C2}E_{C3})(E_{C34}^{2} - E_{C3}E_{C4})},
\end{equation}
\begin{equation}
C_{4} = e^{2} \frac {E_{C3}} {E_{C3}E_{C4} - E_{C34}^{2}},
\end{equation}
\begin{equation}
C_{12} = e^{2} \frac {E_{C12}} {E_{C1}E_{C2} - E_{C12}^{2}},
\end{equation}
\begin{equation}
C_{23} = e^{2} \frac {E_{C23}} {E_{C2}E_{C3} - E_{C23}^{2}},
\end{equation}
\begin{equation}
C_{34} = e^{2} \frac {E_{C34}} {E_{C3}E_{C4} - E_{C34}^{2}}
.
\end{equation}

The uncertainties of the capacitances are then propagated from the uncertainties of the electrostatic energies.

\section{Modeling the inter-dot capacitance}

\begin{figure}[t]
\includegraphics[width=0.48\textwidth]{figure-C_sim-v1.pdf}
\caption{
Calculations of the capacitance of quantum dots beneath a conducting plane. (a) Calculation of inter-dot capacitance, $C_{ij}$, as a function of the center-to-center distance, $d$, between the dots. The dashed line is a power law fit, with exponent -3.07. The vertical dotted line indicates the lithographic pitch of the plunger gates, 130 nm. (b) Calculations of total dot capacitance, $C_{i}$, as a function of $d$. Blue circles are calculated with screening effects from the metal gates. Red squares are calculated without screening. The horizontal dashed line corresponds to the expected self-capacitance of a disc of diameter $D=80$ nm, given by $4\epsilon D$. The light blue shaded region corresponds to the range of $C_{i}$ measured for the barrier gate voltages shown in Fig. 4 of the main text.
}
\label{fig:C_sim}
\end{figure}

To estimate the variation in dot spacing associated with the variation in inter-dot capacitances observed in Fig. 4 in the main text, we model a double dot as a pair of conducting discs embedded in a semiconductor beneath a conducting plane, which incorporates the screening effects from the overlapping gate metal. The discs in the model have a diameter $D$ equal to the plunger gate width of 80 nm and a height of 1 nm. The distance of the dots below the conducting plane is 35 nm, which corresponds to the combined thickness of the SiGe spacer and the gate oxide in the device. COMSOL is used to model the system and to calculate the capacitance matrix. Fig.~\ref{fig:C_sim} shows the results of these calculations. In panel (a), the inter-dot capacitance, $C_{ij}$, is calculated as a function of the center-to-center distance, $d$, between the dots. The range over which $d$ is varied in these calculations is determined by the diameter of the dots in the model (80 nm) and the lithographic device pitch (130 nm) and is the range over which the distance between a pair of dots can vary inside the full array without overlapping each other or overlapping the neighboring dots. Over this range in $d$, $C_{ij}$ ranges from 1-10 aF, in good agreement with the range of inter-dot capacitances we observe in the device (2-13 aF). In panel (b), the self-capacitance of an individual dot, $C_{i}$, is calculated as a function of $d$. The blue circles are calculated with the screening effects from the gate metal included, and the red squares are calculated without screening effects. The $C_{i}$ values calculated without screening agree reasonably with the expected self-capacitance of a disc, given by $4\epsilon D$, marked on the plot by a horizontal dashed line. The $C_{i}$ values calculated with screening are systematically higher, and are in better agreement with the range of measured values for the points in Fig. 4 of the main text, indicated by the light blue shaded region. This agreement of both $C_{ij}$ and $C_{i}$ between the calculations and the measurements indicates that the dimension used here to model the dots ($D=80$ nm) is a reasonable approximation to the actual dot dimensions.

\section{Expressing capacitive coupling in terms of dot capacitances}
The capacitive coupling creates a detuning shift in one double dot due to a change in polarization of the other double dot:
\begin{multline}
g = \Delta \epsilon_{12} = \epsilon_{12}(N_{1},N_{2},N_{3}+1,N_{4}) \\
- \epsilon_{12}(N_{1},N_{2},N_{3},N_{4}+1),
\end{multline}
with an equivalent expression for $\Delta \epsilon_{34}$. The detuning is defined as the difference of quantum dot chemical potentials, which can be calculated from the electrostatic energy of the full capacitance network:
\begin{multline}
g = \Delta \epsilon_{12} = (U(0,1,1,0) - U(1,0,1,0)) \\
 - (U(0,1,0,1) - U(1,0,0,1))
 .
\end{multline}
Here we assume a total electron number of one per double dot, but the result is the same for higher fixed electron numbers. Expanding Eqs.~\ref{eq:U} and \ref{eq:matrices}, the terms proportional to source voltages and their capacitances cancel out, resulting in an expression that depends only on the seven capacitances that we find:
\begin{widetext}
\begin{equation}
g = \frac{e^{2}}{|\mathbf{C}|} C_{23}(C_{1}-C_{12})(C_{4}-C_{34})
= e^{2} \frac{C_{1}C_{4}C_{23}-C_{1}C_{23}C_{34}-C_{4}C_{12}C_{23}+C_{12}C_{23}C_{34}}{C_{1}C_{2}C_{3}C_{4}-C_{1}C_{2}C_{34}^{2}-C_{1}C_{4}C_{23}^{2}-C_{3}C_{4}C_{12}^{2}+C_{12}^{2}C_{34}^{2}}
.
\label{eq:coupling}
\end{equation}
\end{widetext}
This expression can be written as a series expansion in the reduced capacitances $c_{ij}=C_{ij}/C$ to obtain Eq. 4 in the main text. Eq. 4 also makes use of the approximation that all $C_{i}=C$. Across the tunings that we study here, the uniformity of the $C_{i}$'s varies, but they differ from the mean by at most $20\%$. The reduced capacitances are strictly $<1$. For $C \equiv \langle C_{i} \rangle$, $c_{12}$ and $c_{34}$ range from 0.1-0.2, and $c_{23}$ ranges from 0.03-0.08, putting any third or higher order terms in the expansion below $1\%$.

redpajama_set_name: RedPajamaArXiv


A steering group was set-up to increase awareness of the Fair Trade campaign across Renfrewshire and work towards Fairtrade Zone status, which was achieved in February 2009.
The group aims to meet every two to three months to discuss how best to advance fair trade in Renfrewshire and to support the members of the group effectively to achieve this aim.
There are local fair trade groups in Lochwinnoch, Bridge of Weir, Houston, Kilbarchan and Bishopton as well as committed fair trade businesses such as Rainbow Turtle and Just Trading Scotland in Paisley.
All are welcome to be a part of the group to help advance fair trade in Renfrewshire.
Previous minutes, agendas and information can be found on this page.


Pedro Reyes, Manufacturing Myschief,Noam Chomsky. Credit: HErickson/MIT.
What is the Noam Chomsky puppet?
This rod puppet, in the likeness of MIT Institute Professor & Professor of Linguistics emeritus Noam Chomsky, is the protagonist in Manufacturing Mischief: A Puppet Play by Pedro Reyes. It is inspired by Japanese Bunraku puppets, which are characterized by subtle movements. In this tradition of puppetry, relationships between characters are created by the puppets' eye contact rather than by mouth movements. Reyes says he likes this style of puppet because its design lends itself to delivering more serious content, not just laughs.
The puppet is a vehicle for discussing Chomsky's philosophical ideas within the play, especially his critique of artificial intelligence research, the unintended impacts of technology and other dilemmas of late capitalism.
Pedro Reyes, Inaugural Dasha Zhukova Distinguished Visiting Artist at MIT Center for Art, Science & Technology, created the work. He commissioned master Japanese puppet makers to fabricate the Chomsky puppet, and the other characters in the play, including Ayn Rand, Elon Musk and Karl Marx. Reyes has collaborated with the same craftsmen to make a number of puppets for his works, Baby Marx (2011) and The Permanent Revolution (2014).
Playwright Paul Hufker wrote the script for Manufacturing Mischief, and used Chomsky's writings as source material for the puppet's dialogue. Puppeteers Christine Schisano (Puppet Master), Christina Stone, Victor Ayala, Mery Cheung and Julia Darden animate the Chomsky puppet and the other characters.
How was the puppet made?
Puppet construction at the Foundation Modern Puppet Center in Japan requires extensive training in the Bunraku tradition and methods gained from years of study.
Manufacturing Mischief: A Puppet Play by Pedro Reyes premieres at MIT on April 26 & 27, 2018 at 6:00pm. Visit the Manufacturing Mischief event page for details.
The Chomsky character is central to the plot of Manufacturing Mischief. (The play's title borrows from Manufacturing Consent, a book Chomsky co-authored with Edward S. Herman.) The Chomsky character finds an antagonist in Ayn Rand, who has never been taken seriously in academia, although she continues to be read widely and is a source of ideologies associated with Trumpism.
Tomás Saraceno,Aerocene. Credit: Katherine Higgins.
Bryan Czibesz and students observing 3D printer in action. Credit: Jay Pastorello.


text:
Bernard Chaet papers, circa 1944-2012
Chaet, Bernard, 1924-2012
Summary: The papers of painter and teacher, Bernard Chaet (1924-2012), measure 8.1 linear feet and date from circa 1944-2012. Included is biographical material, correspondence, writings, photographs, works of art and printed material.
Biographical material includes resumes and awards. Correspondence is with students, friends and other artists and art related professional and letters from various galleries and schools that represented Chaet or employed him. Also included are a significant number of condolence letters and cards to Chaet's wife, Ninon, upon Chaet's death. Writings include manuscripts for Chaet's books, "The Art of Drawing," and "An Artist's Notebook: Techniques and Materials," and assorted lecture notes.
Photographs are of Chaet in studio and the classroom and with family, friends, and students and a DVD of images of Chaet's work. Artwork includes sketchbooks and loose sketches by Chaet. Printed material consists of press clippings, catalogs, and gallery announcements.
Bernard Chaet (1924-2012) was a painter and teacher in Boston, Massachusetts and New Haven, Connecticut. Chaet was born March 7, 1924 in Boston, and attended the School of the Museum of Fine Arts, Boston, studying with Karl Zerbe and graduating in 1949 with a B.S. from Tufts University which had an affiliated program with the MFA. On Zerbe's recommendation, he began teaching painting at Yale University in 1951, retiring in 1990. He exhibited often in Boston at the Boris Mirski Gallery and the Alpha Gallery. Chaet is the author of "Artists at Work" (1961), the "Art of Drawing" (1971 and 1977), and "An Artists's Notebook: Techniques and Materials" (1979).
Donated 1995 by Bernard Chaet and 2014 and 2020 by Leah Vogel, Bernard Chaet's daughter. One drawing of Chaet donated 1998 by Chaet's wife, Ninon Chaet.
Location of Originals
Some original correspondence, clippings, and exhibition material: discarded by Chaet after photocopying.
Some correspondence, clippings, and exhibition material are photocopies.
This collection is open for research. Access to original papers requires an appointment and is limited to the Archives' Washington, D.C. Research Center. Researchers interested in accessing born-digital records in this collection must use access copies. Contact References Services for more information.
Bernard Chaet papers, circa 1944-2012. Archives of American Art, Smithsonian Institution.
Art -- Technique
Artists' studios -- Photographs
Drawing -- Study and teaching

redpajama_set_name: RedPajamaCommonCrawl


When I was 14-years-old and considering becoming a professional actress my dad saw an advertisement in the back of the Burnley Express to audition for The Rossendale Players to play Anne in The Diary of Anne Frank.
I don't recall now whether or not I'd heard of Anne before, but I do remember that my dad drove me to Waterfoot soon after where myself and around 30 other girls sat in a big circle in a freezing cold church hall and took it in turns to read segments of Anne's diary.
Non-actors won't know this, but actors spend most of their time rehearsing in freezing cold church halls - that's one of the many reasons why so many of us look like characters from Withnail and I.
I remember seeing a girl at the other side of the room smiling at me, so it was delightful when I turned up for the first rehearsal to discover we would be playing sisters.
On this journey I have been on, looking for people to interview and connecting with old friends, I have discovered that said actress, Joanna Bond, became a professional actress and is very successful, performing in every genre, from music videos, ads, radio (regularly on Radio 4 and World Service), numerous theatre productions, including Lady Macbeth in Macbeth, and on TV in The A Word, Hollyoaks, Coronation Street, Emmerdale and Trust with Robson Green.
The director, Len Taylor, and I lost touch over the years, but I managed to track down his phone number.
I was very nervous to call him.
He has one of those call blocking services, whereby one has to first say your name, then if they want to speak to you they answer.
Luckily, he heard my name and picked up.
We had a trip down memory lane, and I got to ask him about his journey through theatre in the north.
It was a special moment for me, because Len changed my life the day he asked me to play Anne.
How did your love of theatre begin?
I was lucky enough to be encouraged at primary school in Orrell to act in dramas having been "discovered" by a trainee teacher in the first instance.
I also took part in several Nativity plays both at school and at the local church Sunday school.
As a consequence I went to several local am dram and operatic plays and concerts.
I also used to put on my own concerts in my garden at home on a makeshift stage using a cord with blankets on as curtains.
I used to involve my friends in my scripted (and unscripted) shows and we charged a penny or a jam jar (which was recycled for a penny) to enter.
The love of theatre also was sustained in grammar school where I appeared in several plays. It was supplemented by theatre visits to see classic plays.
When I was 13 I was also lucky enough to have a school friend who had a famous (or infamous) comedian as an uncle. He was called Frank Randle.
He got free tickets to see him at Wigan Hippodrome Theatre and I was hooked on Variety theatre from then on.
I went regularly to see the turns in Wigan and in Blackpool seeing many famous stars of that era in the fifties.
My first main play I was in at grammar school was as Hopcroft Minor in The Happiest Days of Your Life.
I was thrilled to hear that make-up was going to be used, so I could become a "proper" actor!
The art mistress who was in charge told me at dress rehearsal to run round the theatre block before the play. When I returned a bit flushed she said that was fine!
We met on The Diary of Anne Frank. What made you choose that play?
We had a play selection committee and it was always one I had wanted to do.
That year was the 50th anniversary of Anne's death and The Anne Frank Society gave us permission to perform the play.
They came and created a display at the back of the hall and the Rossendale Players had a collection.
We were inundated with responses and had over 50 girls turn up. Eventually we had to change plans and do the auditions over two days.
You were also a biology teacher as well as a director. Did you learn anything from biology that helped you to direct?
Not from biology directly, but teaching is not without it's drama.
When I got into Webber Douglas Academy, there were three people from the class I was in at Accrington and Rossendale college in the class of twelve. The school auditions thousands of people from all over the world for the twelve places. Have you had any similar experiences of meeting the talent from the area in far flung places?
I have moved around the North of England with my job in teaching and joined many different amateur theatre and operatic groups. It always amazes me how much talent there is in local communities wherever I have been. Many like yourself go on to train and become professional actors and singers.
I don't have heroes as such but there are many people I admire greatly and had the good fortune to see in person on stage. Amongst them are Alastair Sim, Ron Moody, Alan Howarth, John Thaw, Tom Courtney, Peter Postlethwaite, Maxine Peake, Lenny Henry, Victoria Wood, Alun Armstrong and Roy Hudd to name but a few. My favourite dramatist is Alan Bennett.
What have you not achieved yet that you'd like to?
At 76 I have achieved most things in life, but unfortunately having given up acting. I still love directing plays I would like to carry on doing so at Ilkley Playhouse.
Do you have any advice for any young directors reading this?
Be an assistant director. Get a good mentor. Listen. They are there to learn, not be a dogsbody, so I always say, "The next few rehearsals are down to you", then we have a debrief at the end.
We have a 19th Century theatre in Burnley that has been saved from demolition. The only other theatre by that architect is on Shaftesbury Avenue in London. Do you have any thoughts on that?
I never went to Burnley Empire but I understand it was on the Moss circuit which contained many famous artistes who toured the country.
It is a sin to demolish buildings like these and I hope that it can be regenerated as a community arts centre capable of attracting musical acts and plays.
Burnley has a large populated catchment area and I am sure such a venture would be well supported.


text:
Food Bank Leads the Way in War on Hunger in the Hudson Valley
By Greg Hudson
As of December 2014, unemployment in the Hudson Valley has dropped to below five percent for the first time since May 2008. It's a sign of the progress the region has made in recovery from the country's worst economic downturn since the Great Depression.
As new industry and jobs flood the area, signs of economic recovery such as new businesses and new construction are everywhere. Not always so visible is a war being waged against a problem that has escaped the public conscience for most of the year: hunger.
A 2010 Hunger in America study on hunger in the Hudson Valley reported that approximately 244,400 people, including over 80,000 children, received food from food banks operating in the Hudson Valley and the Capital Region at the height of the recession from late 2010 to early 2012. Local food pantries and other agencies in the region report that the demand hasn't decreased even with the increased employment rate.
"Our volume of clients hasn't gone down at all," Edith Schmidt of the Fishkill Food Pantry said. "If anything, it's gone up."
The explanation may be simpler than the numbers would suggest.
Hunger Remains as Jobs Return
While employment is on the rise and jobs are more readily available, the changing labor environment in America means that many — if not most — new jobs provide little to no benefits to employees, who have to cover the cost of securities like health and dental insurance out-of-pocket.
The end result is often a personal budget deficit, and one of the first things to get cut from a family budget is food, according to Carrie Jones Ross, food sourcing director at the Food Bank of the Hudson Valley in Cornwall, New York.
As a food sourcing director, Jones Ross cultivates relationships with donors in the Hudson Valley area, organizing the donation of non-perishables, beverages, produce and personal hygiene products.
"After food, the next thing that gets cut from a family budget is hygiene products," she said.
Hunger on the Hudson by little rebellion on Exposure
The Front Lines
The Food Bank of the Hudson Valley serves 385 member agencies who provide food to needy families, and Jones Ross and her associates sell food and fresh produce to those agencies at 16 cents a pound.
In the winter time, Jones Ross says the food bank relies on produce from other parts of the country, but purchases produce or receives donations from local organic farms during the summer time. Her efforts have increased Food Bank inventory of produce from a two-million-pound annual average to six million pounds in 2014.
"My program is the Food Bank Farm Stand," Jones Ross said. "I coordinate donations from Hudson Valley farms and set up farm stands in Kingston and Newburgh with locally sourced produce and give it away for free."
Jones Ross said that her farm stand clientele is varied, from single moms and minority families who are underemployed to senior citizens, the mentally ill, and veterans.
Year-Round Battle
Donation to the Food Bank and regional pantries is high during the holiday season, as philanthropic groups and major supermarket chains lead food drives to collect fresh food and funds for Food Bank use.
During the summer, however, raising funds and keeping the war on hunger in public consciousness is more of a challenge, according to event coordinator Jessica Fetonti.
"We host events throughout the year," she said. "Our 'Walk to Fight Hunger' in October is a great way to get people to come out and raise awareness that there is a hunger issue in the Hudson Valley."
Fetonti said most Food Bank funds are raised during the holiday season and that the struggle each year is to make the funds last in the face of steadily increasing demand.
"We just try to ensure that the funds are there to provide the food when it's needed," Fetonti said.
regional Food bank outreach | Create infographics


text:
Q: What is the point/utility of addEvents? When would it be useful? I saw that it adds events to an Observable. However, you would only add it if you would fire it at some point. So, if you add the firing of the event at some line in your code, it was useless to put it into addEvents in the first place and when you don't place the fireEvent in your code then it was pointless to include it in addEvents. What am I missing?

A: If you are adding custom events with your component then you must add the events with addEvent before you can fire the events with fireEvent. Adding and firing events is useful in binding custom components together without explicitly referencing them.

redpajama_set_name: RedPajamaStackExchange


Character » Skids appears in 524 issues.
Skids is a mutant who has the power to form force fields and was romantically involved with the mutant Rusty Collins before his death.
Like many mutants, Sally Blevins' mutant powers manifested at a time of great stress. Her father had beaten her mother severely for letting Sally wear pearls and had turned his rage on Sally. It was at this time that she developed her ability to form a force field around herself, which protected her from her father and allowed her to scare him off. Unfortunately, it also prevented her from saving her mother. Whenever Sally tried to pick her up, she just slipped from her arms; her mother died right in front of her. As a young runaway, Sally ended up living in the sewers with the Morlocks and calling herself Skids. Her good looks caused her to be treated as an outcast by the other Morlocks. Masque repeatedly tried to change her face, but her powers prevented his powers from taking hold. Sally met Rusty Collins when he was in the middle of a fight between Freedom Force and X-Factor. The pair was attacked by angry bystanders, and Skids used her powers to protect them; they also learned that Skids could not be hurt by Rusty's flames. Freedom Force followed them to the tunnels, where Rusty Collins was severely injured by Blob. X-Factor saved the teens and began training them to better use their powers. Skids' rescue from the tunnels could not have come at a better time, since the horrible event known as the Mutant Massacre occurred shortly after.
Skids was created by Louise Jones Simonson and Jackson Guice and first appeared in X-Factor Vol.1 issue 7 (1986).
The surviving Morlocks came to live with X-Factor; Skids and Rusty spent a lot of time together and soon fell in love. When she refused to rejoin the Morlocks, Masque swore his revenge on the pretty young girl. During a training session with Rusty and Jean Grey, Skids' pearls were broken. Seeing this as a learning example, Jean tried to get Sally to pick them up. After being repeatedly unsuccessful, she grew frustrated and ran away to rejoin the Morlocks.
Rusty followed her and saved her from an attack by Masque; the two escaped once again after sharing their first kiss. When they returned to the X-Factor mansion, Rusty Collins learned the fate of the first woman he kissed: she was horribly disfigured when his mutant power flared up. Rusty Collins was upset and thought that Masque would be able to help her; Masque's price was the disfigurement of Rusty's face. Arriving too late to stop Masque, Skids grew so angry that she began to choke Masque, her powers turning off for the first time. He agreed to heal Rusty Collins, so Skids let him go and was now able to control her force fields. The young couple continued their training and relationship. Skids' control over her powers continued to grow and she used them to stop Infectia from harming Iceman. Shortly afterwards, the teens (Skids, Rictor and Boom Boom) were sent to a boarding school; the younger children, Artie and Leech, were sent to a private school. Rusty returned to the Navy, but he was sent to prison after he returned.
While at the school Skids received a message from Wiz Kid that Artie and Leech, along with other mutant children, had been kidnapped by demons. Unable to reach X-Factor the teens donned new costumes and named themselves the X-Terminators. On the way to rescue the kids they broke Rusty Collins out of prison. During the battle they met and aligned themselves with New Mutants and together they were able to defeat the demons and save the children. In the aftermath of Inferno the New Mutants came to stay on X-Factors ship and Skids, Rusty, Boom Boom and Rictor joined the group becoming the new New Mutants. The new group was not together long before they were separated. The group was sent to Asgard to help Danielle Moonstar while Skids stayed with Rusty to help him escape Freedom Force yet again. The couple was attacked on Liberty Island and Skids used her force field to protect them in the hope of lasting until morning when the tourists would arrive. In order to prevent their exposure Freedom Force removed the slab of concrete Skids and Rusty were on and took them to a federal prison. Charged with resisting arrest Skids was imprisoned to prevent her from talking about Freedom Force's plans. When the Vulture attempted to break out several weeks later Rusty tried to stop him when he realized the Vulture was intending to free Nitro. Skids learned a new way to use her powers when she used them to shield her fall so that she could protect Rusty from the guards bullets. The couple escaped from the prison in order to stop Nitro and tell the media about Freedom Force. They arrived to late to stop Vulture from freeing him but when Nitro was about to blow up the people around them Sally contained his blast in her shields. While this prevented the villain from reforming his body for some time, Skids passed out from her injuries and Rusty's plan to alert the media failed. Mystique informed the media that he and Skids had been trying to free Nitro and were lying about their innocence.
offered the group salvation aboard Magneto's space station Avalon. Rusty and Skids were taken to the station along with Cannonball who went in order to spy on Magneto. Using his powers Magneto was able to reverse Skids and Rusty's brainwashing and they decided to stay there. They joined the Acolytes although they rarely took part in any missions. After Magneto's battle with Professor X Exodus took over in his name. Under Exodus' reign, Sally and Rusty began to regret their decision and started looking for a way off the station. Unfortunately, during that time, Holocaust was found floating in space and brought aboard the ship. Holocaust killed most of the Acolytes including Rusty Collins, during the battle between Exodus and Holocaust the station was severely damaged. Cyclops and Jean Grey were teleported aboard by a surviving acolyte to save the rest of the group. Sally was unable to get to an escape pod, so Jean Grey went to save her; using their powers the two women safely returned to Earth. After she recuperated from her injuries, Sally left to figure out her life and mourn her lost love.
Seeking a normal life, Skids attended college in Colorado and took no part in mutant issues. She did remain in contact with her former teammates and allowed them to stay at her home only to be pulled back into the life she wanted to avoid. An attack on X-Force by Reignfire and Locus forced Sally to reveal her mutant abilities to her fellow college students. When her force field and Locus' teleportation ability interacted, it caused both women to be sent to Latveria. They awoke on a mountain powerless, with Locus still wanting to attack Skids. Pandemonia put both women to sleep and magically forced them to do her bidding. They attacked X-Force but were defeated when Danielle Moonstar and Jennifer Kale broke Pandemonia's spell and sent her to another dimension. Skids dropped out of sight for some time after this, only to reappear as a member of Sunspot's X-Corporation.
The results of M-Day left Skids one of the few mutants to retain their powers. She stayed at the camp and shared a tent with Magma and Outlaw. When Apocalypse came to the camp and offered salvation for those who would drink his blood, Sally gladly accepted. She was stopped by Karma and yet still sided with Apocalypse when he was attacked by the X-Men. Recently, Skids was seen to have rejoined the Morlocks and is living in the sewers again. She also become a terrorist again for reasons thus far unknown. She doesn't seem entirely happy with Masque's leadership. Sally disagreed with Masque's attack on a group of humans, and felt that he was bending the prophet's words to fit his vision. Warpath, Storm, Hepzibah, and Caliban entered the sewers in search of the Morlocks after seeing Masque's message. Caliban found Sally, who had been left under a pile of rubble. As the group prepared to leave, they were confronted by a Sentinel who thought that they had mutilated the humans. The attack was stopped when Sally revealed that she is an agent of SHIELD.
Skids possesses the mutant superhuman ability to create force fields around herself and others, totaling an area of approximately 30 cubic feet, with her being in the center. At first, she could only cover herself with the field, so it is assumed that with more training, she could expand her field of influence to a much greater area. The field itself protects Skids from harm by covering her with a completely frictionless surface. The field covers all of her body, so she never has any actual physical contact with anything touching any part of her body, as long as it is activated. When using her power, nobody can touch or hold her, bullets and other projectiles will not harm her, and she apparently glides over any surface she travels over, since she is not truly touching it.
Known Relatives : Matilda, mother (deceased), Bill, father.
She appears as one of the Morlocks who escaped from Mr Sinister´s Breeding Pens. She and the good few Morlocks are isolated in the tunnels under Manhattan once again. A year after Apocalypse´s fall, Magneto offers them the opportunity to live on the surface and abandon their tunnels, but their leader, Marrow, refuses the offer and starts a battle with the X-Men. Skids manages to defend the group for a while, but she is beaten by Silver Samurai. The Morlocks are defeated and put under government vigilance.
Skids' name appears in William Stryker's files on Lady Deathstrike's computer.
Skids made an appearance in the episode No Mutant is an Island. In the episode Cyclops quits the X-Men and returns to his orphanage home and encounters his friend Sarah. She tells him that Zebediah Kilgrave, The Purple Man, has decided to adopt all the mutant children, but his intentions are to make them into his personal strikeforce to attack humans. Skids is featured as one of the orphan mutants alongside Rusty Collins, Boom Boom and Wiz Kid.
X-Factor #7 - Fall Out!


Home / How do we work?
We are conscious of the great effort needed to learn a new language, so we always try to keep our students motivated and to make them feel at home. But Spanish is forbidden!
Our method consists of combining professionalism and a "casual" spirit. Our teachers are all natives and/or bilingual and they have the qualification required for teaching English.
All of them help their pupils to immerse themselves in the different language skills (speaking, listening, reading, writing) using educational and dynamic materials, mainly focusing on conversation activities, all of which creates a pleasant and fun environment.
In fact, the way we teach English in Nep goes beyond the academic work. We create bonds with our students, who are encouraged with activities and events on special dates (Halloween, Christmas, Saint Valentine's Day, Carnival…).
Nep English School organises its courses attending two criteria: age and English level. The latter is determined by an oral and written level test, to ensure the homogeneity in every group.


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WikiLeaks Reveals How the CIA Could Hack Your Router
Routers aren't great at security—and apparently no one knows that better than the CIA
Your Wi-Fi router, sitting in the corner of your home accumulating dust and unpatched security flaws, provides an attractive target for hackers. Including, according to a new WikiLeaks release, the CIA.
On Thursday, WikiLeaks published a detailed a set of descriptions and documentation for the CIA's router-hacking toolkit. It's the latest drip in the months-long trickle of secret CIA files it's called Vault7, and it hints at how the agency leverages vulnerabilities in common routers sold by companies including D-Link and Linksys. The techniques range from hacking network passwords to rewriting device firmware to remotely monitor the traffic that flows across a target's network. After reading up on them, you may find yourself itching to update your own long-neglected access point.
Inside Vault 7
WikiLeaks Just Dumped a Mega-Trove of CIA Hacking Secrets
How the CIA Can Hack Your Phone, PC, and TV (Says WikiLeaks)
How to Update All Your Gear (For Safety!)
Routers make an appealing entry point for hackers, the CIA included, in part because most of them offer no easily accessible interface or performance giveaways when they've been compromised. "There's no sign to tell you whether your router is hacked or not—you're just on the internet as normal," says Matthew Hickey, a security researcher and founder of the firm Hacker House, who's analyzed the documents. "The only thing is that everything you're doing on the internet is going through the CIA."
According to the leaked documentation, the CIA's router-hacking killchain seems to start with a tool called Claymore, which can scan a network to identify devices and then launch the CIA's router-hacking exploits. The leaked files cite two specific exploits, named Tomato and Surfside. Tomato appears to target vulnerabilities in at least two routers sold by D-Link and Linksys, and is designed to steal those devices' administrative passwords. The files also note that at least two other routers sold by Linksys could be targeted with Tomato after a few more "manweeks" of development.
The files don't explain Surfside in any detail, or exactly how the Tomato exploit works, though the documentation hints that it may abuse a protocol called UPNP that security researchers have long warned represents a security liability. It's not clear if the vulnerabilities that the exploits attack still exist in devices, or if the manufacturers have fixed them, given that WikiLeaks' Vault 7 files appear to date to early 2016 at the latest. (Neither D-Link nor Linksys responded immediately to a request for comment.) Even if they've made a patch available, though, the difficulty of updating router firmware means vulnerabilities often go unaddressed at the consumer level for years. Hickey also notes that the default admin password often resides printed on a sticker on the back on the router; for models on which Tomato or Surfside don't work, physical access could.
With those credentials, a CIA hacker can then install their own custom firmware, which it calls Flytrap, on a victim's router. That malicious firmware can monitor the target's browsing, strip the SSL encryption from web links they click, and even inject other exploits into their traffic, designed to offer access directly to the target's PC or phone. Yet another piece of software, called CherryTree, serves as a command-and-control system for those hacked routers, allowing operators to monitor and update the infected network devices from a browser-based interface called CherryWeb.
'Everything you're doing on the internet is going through the CIA.' —Matthew Hickey, Hacker House
Given the general insecurity of the average home router, it shouldn't come as a surprise that one of the world's most well-resourced spy agencies has exploited them for surveillance. But the details of those hacking tools should, if nothing else, serve as a reminder to patch your own home router, as frustrating a process as that may be.
Hacker House's Hickey says that if users stay vigilant in keeping their router updated, there's no direct evidence in the CIA leak that their router would be vulnerable to the agency's spying. But given that most users don't frequently update their routers, and consumer antivirus software doesn't track router malware either, WikiLeaks' release demonstrates just how much of a hacking bonanza the world's Wi-Fi access points may offer to capable hackers. "Almost every home has a wireless router, and we don't have many tools to check what's going on on those devices," Hickey says. "So it's quite a stealthy way to get malware into someone's home."
Andy Greenberg is a senior writer for WIRED, covering hacking, cybersecurity and surveillance. He's the author of the new book Tracers in the Dark: The Global Hunt for the Crime Lords of Cryptocurrency. His last book was *[Sandworm: A New Era of Cyberwar and the Hunt for the Kremlin's Most... Read more
TopicsroutersWi-Fivault 7CIAhacks
North Korea Hacked Him. So He Took Down Its Internet
Disappointed with the lack of US response to the Hermit Kingdom's attacks against US security researchers, one hacker took matters into his own hands.
Ice Cream Machine Hackers Sue McDonald's for $900 Million
Kytch alleges that the Golden Arches crushed its business—and left soft serve customers out in the cold.
Russia Is Leaking Data Like a Sieve
Ukraine claims to have doxed Russian troops and spies, while hacktivists are regularly leaking private information from Russian organizations.
The Bitcoin Bust That Took Down the Web's Biggest Child Abuse Site
They thought their payments were untraceable. They couldn't have been more wrong. The untold story of the case that shredded the myth of Bitcoin's anonymity.
Putin and Biden Must Choose: How Does Russia Want to Lose?
As Russia's failures mount in its war against Ukraine, can Biden prevent an isolated Putin from doing the unthinkable?
Garrett M. Graff
How to Encrypt any File, Folder, or Drive on Your System
Trust us, it's safer this way.


The new tax law has left an important estate tax issue up to the IRS to determine. That is what to do if the estate tax exemption reverts to its previous level and the deceased has gifted more than that amount.
The recently passed tax reform bill required Congress to make several compromises because of budget limitations in the amount the bill could add to the deficit and avoid a possible filibuster by Democratic senators.
Those limitations prevented a complete elimination of the estate tax, as had long been proposed by Republicans in government.
The estate tax exemption has now been doubled. However, this could not be made permanent and the exemption is scheduled to revert back to its previous level in 2026.
This creates a potential issue for some estates, as Wealth Management discusses in "Clawback Under New Tax Law."
The issue is what to do if someone in 2018 uses the doubled exemption to make gifts and thus uses up their lifetime exemption under the current law, but then passes away after the exemption limits have reverted to previous levels. The exemption limit to use for the estate is unknown. It is possible that gift amounts over the exemption limit in place at the time the person passes away, could be clawed back into the estate for estate tax purposes.
It is possible the agency will decide that there should be clawbacks. Therefore, for now people need to be wary and talk to advisors before gifting too much.


Pope Anterus (died 3 January 236) was the Bishop of Rome from 21 November 235 to his death in 236. He succeeded Pope Pontian, who had been deported from Rome to Sardinia, along with the antipope Hippolytus.Anterus was the son of Romulus, born in Petilia Policastro, Calabria. He is thought to have been of Greek origin, and his name may indicate that he was a freed slave. He created one bishop, for the city of Fondi.


Living in the country now, I can't tell you how many cats and dogs just get dumped. So far I have seen a lot more cats than dogs. My husband grew up on a farm and they had probably a handful of animals a year just get tossed. Having a winter cat shelter for feral cats roaming around is a great way to protect them from the elements. I wanted to share a few easy do-it-yourself ideas and then shelters you can buy and put out for these cats. So if you aren't a fan of DIY projects you can buy a shelter just the same and get it set up.
I find it quite sad how many cats roam without a home. I am thankful their cat instincts kick in and they can hunt for food, but it's still sad. Not knowing when they will get another meal. When I see a lost cat or a feral cat that you can tell has no home, I can't help but feed it. I just love animals and they deserve all the love we can give them.
Shortly after we moved here there was an orange cat that showed up at our country home. He was living in our barn, and finally, after a week he began eating the food we left out for him. He was so timid and scared and kind of bullied our other cats. You could tell he needed lots of love, but mostly a safe spot and food to bring him comfort. He finally ran away from here but stayed around for six months or so.
This is one of the cheapest do-it-yourself projects. Take a styrofoam cooler and cut a small circular hole on one of the sides. This will be where the cat can enter. Add in some straw and secure the lid and find a good place to set it out. You can also ask medical supply stores and such if they have any coolers, as most have items shipped to them in these and they end up in the trash.
Do you have an old cooler that you took to the beach that no longer works for you or you got an upgrade? You can easily make it a shelter with an entrance hole and some straw inside.
An affordable option as well is to grab some plastic bins and create a shelter. Take two bins that are close in size but leave a little gap. Fill the gap between the larger and small storage bin with straw, to create insulation. Followed by creating a hole they can get in and out easily. Next, put some straw on the floor and you have an affordable and easy winter cat shelter!
If you own an old dog home or come across one for cheap, buy it! Add some plywood to the entrance so it blocks the entrance. Put just a small circular hole big enough for a cat to go in and out. This helps protect them more from larger predators and keeps it warmer. Toss in some straw and you have a shelter waiting for them.
You can buy a heated shelter to keep your outdoor cats nice and cozy on those cold chilly nights. What is unique about this shelter is there are two exits so they have less of a chance of getting trapped by a predator.
This insulated tube house is nice and compact and can be placed on the side of a house and kind of blends in. Great for keeping stray cats nice and warm and protected.
When you decide on a location make sure it is free of dogs and other animals in range. Clean the front area from snow so that the cat won't get caught inside and if you feel like it you can offer food and water. Helping a feral cat have a warm and safe place to eat is a huge blessing to them.


not for much longer one of the best!
trying to be an intrepid band!
entering not afraid to advance!
then saw movement in the hall!
a man was watching she did believe!
as each viewed the floor plan!
admitted it was a mistake they came!
what the children had seen and heard!
but in weeks bad things were detected!
more intrigue than a fiction thriller!
where conspiracy will not go away!
we wait to see if it does unfold!


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Select ratingGive Wade, Thomas 1/5Give Wade, Thomas 2/5Give Wade, Thomas 3/5Give Wade, Thomas 4/5Give Wade, Thomas 5/5
Wade, Thomas
by Carol E. Dalton, 1996
1720–Fall 1786
Thomas Wade, merchant, Revolutionary soldier, and legislator, was born possibly in Craven County. His father was probably the English immigrant John Wade. About 1743 Thomas Wade married Jane Boggan, a sister of Captain Patrick Boggan of Anson County. They had five children: Holden, Thomas, George (b. 1747), Mary, and Sarah. Throughout his life Wade was a communicant of the Anglican church.
In 1746 he received a land grant in Surry County, Va., but returned to North Carolina and settled in Granville County a year later. From 1761 to 1774 he owned land on Lynch's Creek and in Saint David's Parish (Chesterfield District), S.C., where he was the commissary general of purchases for the colony. Moving to Anson County in 1770, he became a tavern keeper at Anson County Courthouse and a large landowner in Mount Pleasant. For the next two years he served as a justice of the Anson County Inferior Court of Pleas and Quarter Sessions.
Wade was a staunch opponent of British imperial policies. While serving as chairman of the Anson County Meeting of Freeholders (1774), he was elected a member of the Anson Committee of Correspondence. The next year he signed a petition protesting the establishment of the North Carolina–South Carolina boundary line and was elected a delegate to the Provincial Congress held in Hillsborough. During 1775 Wade was a captain of the Anson committee to recruit men and to procure firearms for the rebel cause. As a member of the Provincial Congress (1775–76), he was appointed to reorganize the Anson County Inferior Court of Pleas and Quarter Sessions on which he again served from 1776 to 1778. In addition, he was chosen a commissioner for Anson County to supervise prisoners, especially former Loyalists, and to take care of "unhappy women and children."
The Provincial Congress of 1776 selected Wade as colonel of the Salisbury District of Minute Men. After pursuing Tories in the Pee Dee River area in 1778, he worked to obtain such needed supplies as salt, shoes, and cattle for the state Board of War. In 1780 Tories used his home as a rendezvous and took £50,000 worth of property and his crop. In the following year he participated in several encounters with the British. He won a battle at Raft Swamp in August 1781 against the Tory officers Neil and Ray, identified only as Loyalists from Bladen County. Later, while returning from fighting in the Neuse River area, Wade's troops were surprised by the Loyalist John Neil at Piney Bottom on Little Rockfish Creek. During the skirmish Wade's protégé, "a motherless boy," was killed although he had begged for mercy. Returning to Anson County, Wade raised a force of a hundred men and avenged the boy's death by executing many of the Loyalists and destroying their property. On 1 Sept. 1781 he lost a battle at Drowning Creek to Colonel David Fanning. Wade's final battle was at Lindley's Mill in present Alamance County, where he fought under General John Butler.
When the war ended, Thomas Wade was elected to represent Anson County as a senator in the General Assembly. While serving in New Bern, Hillsborough, and Halifax where the Assembly met in 1780, 1782, and 1783, he was chairman of the Committee on State Papers and on Petitions. In the 1783 session he sat on the committee that laid out the streets of Fayetteville. In addition to his senatorial duties, he was sheriff of Anson County in 1785. He was elected in 1786 to serve another term in the senate but died before taking his seat after becoming ill in Cheraw, S.C. He was buried in the family burial ground in Mount Pleasant. The next year, the General Assembly voted to change the name of New Town to Wadesborough in his honor.
Anson County Court, Minute Docket, Court of Pleas and Quarter Sessions, 1772–74 (microfilm, North Carolina State Archives, Raleigh).
W. K. Boggan, "Colonel Thomas Wade: Distinguished Citizen, Patriot, and Soldier," in The Colonial History of Anson County from Its Erection to the War of the Revolution (mimeographed, 1923).
Walter Clark, ed., State Records of North Carolina, vols. 11, 14–16, 19, 22 (1895–1907).
David Fanning, Colonel David Fanning's Narrative of His Exploits and Adventures as a Loyalist in North Carolina in the American Revolution (1908).
Brent Holcomb, comp., Anson County, North Carolina, Wills and Estates, 1749–1795 (1950).
May W. McBee, comp., Anson County, North Carolina, Abstract of Early Records (1950).
Robert L. Meriweather, The Expansion of South Carolina, 1729–1765 (1940).
New Bern North Carolina Gazette, 2 Sept. 1774.
North Carolina Daughters of the American Revolution, Markers Placed by the North Carolina Daughters of the American Revolution, 1900–1940 (1940).
William L. Saunders, ed., Colonial Records of North Carolina, vols. 4, 10 (1886, 1890).
Stevens, John Austin, B. F. DeCosta, Henry Phelps Johnston, Martha J. Lamb, Nathan Gillet Pond, and William Abbat. 1877. The Magazine of American history with notes and queries. New York: A. S. Barnes.https://www.worldcat.org/title/magazine-of-american-history-with-notes-and-queries/oclc/57262003 (accessed June 5, 2014).
Wade, Thomas. "Resolutions by inhabitants of Anson County concerning resistance to Parliamentary taxation and the Provincial Congress of North Carolina Wade, Thomas, 1720-1786; Et Al. August 18, 1774 Volume 09, Pages 1032-1034." Documenting the American South: Colonial and State Records of North Carolina. https://docsouth.unc.edu/csr/index.html/document/csr09-0298 (accessed June 5, 2014).
Wade, Thomas. "Letter from Thomas Wade to Richard Caswell Wade, Thomas, 1720-1786 September 05, 1777 Volume 11, Page 607." Documenting the American South: Colonial and State Records of North Carolina. http://www.docsouth.unc.edu/csr/index.html/document/csr11-0515 (accessed June 5, 2014).
Wade, Thomas. "Letter from Charles Medlock et al. to Richard Caswell Medlock, Charles; Wade, Thomas, 1720-1786; Auld, James; Harrington, Henry William, 1747-1809; Huske, William October 17, 1777 Volume 11, Page 655." Documenting the American South: Colonial and State Records of North Carolina. http://www.docsouth.unc.edu/csr/index.html/document/csr11-0567 (accessed June 5, 2014).
Wade, Thomas. "Letter from Thomas Wade to Richard Caswell Wade, Thomas, 1720-1786 October 29, 1777 Volume 11, Page 664." Documenting the American South: Colonial and State Records of North Carolina. http://www.docsouth.unc.edu/csr/index.html/document/csr11-0580 (accessed June 5, 2014).
Wade, Thomas. "Letter from Thomas Wade to Horatio Gates Wade, Thomas, 1720-1786 November 23, 1780 Volume 14, Pages 750-752." Documenting the American South: Colonial and State Records of North Carolina. http://www.docsouth.unc.edu/csr/index.html/document/csr14-0663 (accessed June 5, 2014).
Wade, Thomas. "Letter from Thomas Wade to Abner Nash Wade, Thomas, 1720-1786 June 28, 1780 Volume 14, Pages 865-866." Documenting the American South: Colonial and State Records of North Carolina. http://www.docsouth.unc.edu/csr/index.html/document/csr14-0829 (accessed June 5, 2014).
Wellenreuther, Hermann, Maria Gehrke, and Marion Stange. 2006. The revolution of the people: thoughts and documents on the revolutionary process in North America, 1774-1776. Göttingen: Universitätsverlag. https://www.worldcat.org/title/revolution-of-the-people-thoughts-and-documents-on-the-revolutionary-process-in-north-america-1774-1776/oclc/76809186 (accessed June 5, 2014).
Dalton, Carol E.
Alamance County
Anson County
1 January 1996 | Dalton, Carol E.


Nicole from Lanier's Lions and I are having a Thirty-One Party and You're invited.
Party Ends March 31. Click picture to see the great bags. These make great baby shower, birthday, and Mother's day gifts. The thermal totes are perfect for the end of the year Teacher gifts too. You can even have them embroidered with an initial, name or sports logo. With this month's special you can buy a gift and aget another bag for yourself. The Cindy tote is the perfect workbag- it holds my laptop and much more.


text:
Joe Broschak
Associate Professor of Management and Organizations
McClelland Fellow
Associate Professor (by Courtesy), School of Sociology
McClelland Hall 405HH
broschak@email.arizona.edu
Joe Broschak CV.pdf
Social capital and social embeddedness
Managerial mobility and gender differences in careers
Dynamics of inter-organizational relationships
Organizational structure and organizational change
Use of temporary and contract work arrangements
PhD, Management, University of Texas at Austin, 1999
MBA, Duke University, 1993
BS, Petroleum and Natural Gas Engineering, Pennsylvania State University, 1982
Video: Organizational Structure and Equality Research
Joe Broschak joined the Eller College of Management in 2007 after teaching as an assistant professor at the University of Illinois at Urbana-Champaign. He earned his PhD in Organization Science from the University of Texas at Austin in 1999. His areas of research include social capital, social embeddedness, dynamics of inter-organizational relationships, managerial mobility, organizational change, the evolution of labor and product markets, organizational demography, the determinants and consequences of using nonstandard workers and labor market intermediaries.
BNAD 512 Managing Human Capital in Changing Organizations
MGMT 330 Human Resource Management
MGMT 433 Managing Human Resources Strategically
MGMT 442 Designing and Managing Organizations
MGMT 555 Competing Through People
MGMT 580B Doctoral Seminar—Organizations in Their Environment
MGMT 696S Doctoral Seminar—Advanced Topics in Organization Theory
Publications and Working Papers
Feyereisen, Scott, Joseph P. Broschak, and Beth Goodrick. 2017. Understanding Professional Jurisdictional Changes in the Field of Anesthesiology. Medical Care Research and Review, Forthcoming.
Empson, Laura, Daniel Muzio, Joseph P. Broschak, and C. Robert Hinings. 2015. Oxford Handbook of Professional Service Firms. London: Oxford University Press.
Broschak, Joseph P. 2015. Client Relationships. In L. Empson, D. Muzio, J. P. Broschak, and C. R. Hinings (Eds.), Oxford Handbook of Professional Service Firms, London: Oxford University Press.
Empson, Laura, Daniel Muzio, Joseph P. Broschak, and C. Robert Hinings. 2015. Introduction. In L. Empson, D. Muzio, J. P. Broschak, and C. R. Hinings (Eds.), Oxford Handbook of Professional Service Firms, London: Oxford University Press.
Broschak, Joseph P. and Emily S. Block. 2014. With or Without You: When Does Managerial Exit Matter for the Dissolution of Dyadic Market Ties? Academy of Management Journal, 57(3): 743-765.
Cohen, Lisa E., and Joseph P. Broschak. 2013. Whose Jobs are These? The Impact of the Proportion of Female Managers on the Number of New Management Jobs Filled by Women versus Men. Administrative Science Quarterly, 58(4): 509-541.
Gupta, Amar, Elisa Mattarelli, Satwik Seshasai, and Joseph P. Broschak. 2009. Use of Collaborative Technologies and Knowledge Sharing in Co-located and Distributed teams: Towards the 24-Hour Knowledge Factory. Journal of Strategic Information Systems, 18(3): 147-161.
Davis-Blake, Alison, and Joseph P. Broschak. 2009. Outsourcing and the Changing Nature of Work. Annual Review of Sociology. 35: 321-340.
Haveman, Heather A., Joseph P. Broschak, and Lisa E. Cohen. 2009. Good Times, Bad Times: The Impact of Organizational Dynamics on the Careers of Male and Female Managers. Research in the Sociology of Work, 19: 119-149.
Broschak, Joseph P., Alison Davis-Blake, and Emily S. Block. 2008. Nonstandard, not Substandard: The Relationship Among Work Arrangements, Work Attitudes, and Job Performance. Work and Occupations, 35(1): 3-43.
Block, Emily S., Joseph P. Broschak, Sharon Koppman, and Idris Adjerid. Will We Ever Meet Again? The Relationship between Inter-Agency Managerial Mobility and the Circulation of Client Ties.
Hollister, Matissa, Lisa E. Cohen, and Joseph P. Broschak. Not Her Job: The Effects of Gender on Job Death.
Jiang, Han, Jun Xia, Joseph P. Broschak, and Wei Shen. Yours versus Ours: Different Implications of Executive Social Capital and Board Social Capital for Firm Performance.
McCormick, Marleen, Ruth V. Aguilera, and Joseph P. Broschak. Employee Mobility and Inter-Firm Ties: A Cross-national Study of Social Embeddedness in Advertising Agencies in Europe, Asia, and the Americas.
Paik, Eugene, and Joseph P. Broschak. Don't Go Changing to Try and Please Me: The Mobility of Artists and Producers When Record Labels Add Music Genres.
Paik, Eugene, Joseph P. Broschak, and Kenneth W. Koput. Network Structure and the Adoption of Technological Innovation: How Exclusivity in Record Labels' Relationships with Producing Partners Affects the Adoption of the MP3.
Rees, McKenzie, Emily S. Block, Lisa Ordonez, Joseph P. Broschak, and Stephen Gilliland. Simply a Window Dressing? The Symbolic Use of Ethical Violation Reporting Systems.
Coaches Careers in Women's Intercollegiate Athletics
Technological Change and Career Mobility in the Recorded Music Industry
Nonstandard Work Arrangements and Organizational Identity
Academy of Management, Organization Theory Division
Strategic Management Society
Outstanding Undergraduate Teacher, University of Arizona, Department of Management and Organizations, 2009, 2013.
Administrative Science Quarterly
Journal of Managerial Issues


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