This work presents the deposition of Nb2O5 on p and n type silicon substrate. Nb2O5 thin film was deposited using precipitation method for solution preparation, and employing spin coating technique for film deposition, where optimum preparation condition were achieved in our previous published article. The electrical characteristic shows a good rectification ratio of about 46.7 for the Nb2O5/p-Si junction and 4.9 for Nb2O5/n-Si. The estimated ideality factors of n- and p-type Si found to be 5.17 and 3.84 respectively. The maximum detectivity was obtained using P-Si substrate and found to be about 6.2 × 1012 cm Hz1/2 W−1.
