A patterned 3D Si anode is fabricated by physical vapor deposition of n-type Si on a self-assembled TMV1cys-structured nickel current collector. The combination of the large surface area conferred by the virus-enabled 3D Ni/TMV1cys current collector with the high electric conductivity of n-type Si rods results in excellent cyclic stability and rate capability for the core-shell n-type Si/Ni/TMV1cys anodes. Electrochemical impedance spectroscopy reveals that the high electronic conductivity of n-type Si significantly reduces charge transfer resistance, thus even at high current densities the capacity of the n-type Si is increased to almost 630mAh/g compared to undoped Si.