In this work, we studied a destructive impact of the space electron irradiation on the promising thin film materials for optoelectronic applications, namely on pure zinc oxide (ZnO) and indium-doped (ZnO:In) thin films deposited through pulsed electrochemical deposition and Successive Ionic Layer Adsorption and Reaction technique on soda-lime glass substrates, on glass sheets covered with transparent conductive film SnO2:F (FTO), and also on flexible polyimide and polyethylene terephthalate substrates. Morphology of ZnO and ZnO:In films, both before and after their electron irradiation, and also influence of the e-irradiation treatment on the substrates were observed by scanning electron microscopy (SEM). Chemical compositions of the films were investigated by X-ray fluorescence (XRF) microanalysis. To research crystal structure we used X-ray diffraction (XRD) method. As studies have shown, the influence of electron beam irradiation in vacuum, which doses exceed the conditions of long-term space applications are manifested in the form of little ZnO and ZnO:In etching and in the slight electron-induced degradation of the film structure, which is partially offset by concomitant annealing. At the same time, such high doses of electron irradiation adversely affect all kinds of substrates we used.