By union of graphitic carbon nitride polymer with reduced graphene oxide (rGO, ≤1 wt%) via π–π stacking interaction, the band structure of carbon nitride could be well modulated. As a result, a significant increase of photocurrent was observed (e.g., when biased at 0.4 V vs.Ag/AgCl, the anodic photocurrent became 300% higher after doping). Not merely interesting in itself, graphene was also used as a general dopant for semiconductors in band-structure engineering.
