Pulsed electrodeposition methods were applied to the preparation of bismuth telluride films. Over the potential ranges from −170mV to −600mV, the formation of Bi2Te3 nuclei proceeded through a three-dimensional instantaneous nucleation mode. The nuclei densities for several values of potential were ranged between ∼106 nucleicm−2 and ∼108 nucleicm−2. For a pulsed galvanostatic electroplating, the best covering percentage and a stoichiometry close to the desired Bi2Te3 were obtained with the parameters t on, t off and J c, respectively, equal to 10ms, 1000ms and −100mAcm−2.