In this study, the fabrication and characterization of the thin layer of SnSe self-assembled were investigated by control of the preparation parameters. SnSe binary nanoparticles semiconductor were prepared using chemical solution deposition technique. The deposition time and temperature and the solution concentration that govern the evolution of the configuration films and optical band gap in chemical deposition processes was explored. We benefited from Rutherford Backscattering Spectrometry with 2 MeV 4He ions to determine the depth profile of the elements in tin selenide. UV–visible spectroscopy was used for energy band gap determination. Also, the nanostructured and the morphologies of the thin films were analyzed by scanning electron microscopy. We were able to achieve a broad optical band gap ranging from 5.82 to 3.06 eV of SnSe thin films appropriate for solar cell and photovoltaic applications.
