Indium-Selenide thin-films have been prepared by the thermal-evaporation technique at a pressure of 4.5×10−6 torr and a temperature of 673–873 K. For both the as-deposited and annealed films, (i) the electrical conductivity increased with increasing temperature and (ii) the variation of activation energy follows the island structure theory. The temperature co-efficient of resistance (T.C.R.) and Hall-effect measurements indicate that the sample is a n-type carrier. The optical spectra for both types of films were obtained in the wavelength range 0.3<λ<2.5 μm, and by comparing the magnitude of transmittance spectra, it is found that the annealed films are more transparent than the as-deposited ones in the UV and visible range. The integrated transmittance and reflectance values were obtained: the high values of T lum and T sol for the annealed films suggest that indium selenide may be used in selective-surface devices.