This article is - freely available Gamma Radiation Dosimetry
Using Tellurium Dioxide Thin Film Structures Electronic &
Computer Engineering Dept., University of Limerick, Limerick,
Ireland * Author to whom correspondence should be addressed.
Received: 3 July 2002 / Accepted: 19 July 2002 / Published: 23
August 2002 Abstract: Thin films of Tellurium dioxide (TeO2)
were investigated for γ-radiation dosimetry purposes. Samples
were fabricated using thin film vapour deposition technique.
Thin films of TeO2 were exposed to a 60Co γ-radiation source at
a dose rate of 6 Gy/min at room temperature. Absorption spectra
for TeO2 films were recorded and the values of the optical band
gap and energies of the localized states for as-deposited and
γ-irradiated samples were calculated. It was found that the
optical band gap values were decreased as the radiation dose was
increased. Samples with electrical contacts having a planar
structure showed a linear increase in current values with the
increase in radiation dose up to a