US 6707106 B1 A semiconductor device is provided with the high-
speed capabilities of silicon on insulator (SOI) and strained
silicon technologies, without requiring the formation of a
silicon germanium layer. A layer of compressive material is
formed on a SOI semiconductor substrate to induce strain in the
overlying silicon layer. The compressive materials include
silicon oxynitride, phosphorous, silicon nitride, and
boron/phosphorous doped silica glass. 1. A semiconductor device
comprising: a semiconductor substrate, a layer of compressive
material on the semiconductor substrate, and a layer of strained
silicon on the layer of compressive material. 2. The
semiconductor device of 3. The semiconductor device of 4. The
semiconductor device of 5. The semiconductor device of 6. The
semiconductor device of 7. The semiconductor device of 8. The
semiconductor device of 9. The semiconductor device of 10. The
semiconductor device of 11. The semiconductor device of 12. A
method of forming a semiconductor device with a