||Introduction to semiconductors, doping,
generation/recombination, TE carrier concentrations. Carrier
dynamics and transport: drift. ||Chapter 1; Chapter 2; Section
3.1 ||Excess populations and minimum carrier lifetime,
photoconductivity. Non-uniform concentrations and diffusion.
Fick's first and second laws. ||Chapter 3; Section 4.1 ||The
five basic equations. Device structures in TE: carriers and
electrostatic potential; the 60 mV rule. Poisson's equation
(PE). ||Sections 4.2 and 4.3; Chapter 6 ||P-n junctions in
thermal equilibrium and under reverse bias, the depletion
approximation (DA), comparison to PE solution. ||Sections 7.1
and 7.2 ||Review reverse biased junctions. Consider forward bias
and the special case of minority carrier injection into
quasineutral regions. ||Forward biased p-n junctions: carrier
injection, i-v characteristics (ideal and real; forward and
reverse). Engineering carrier injection. ||Bipolar junction
transistors: two coupled diodes, terminal characteristics,
regions of operation