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2013. News. Science. Nanodot-based memory sets new world speed
record A team of researchers from Taiwan and the University of
California, Berkeley, has harnessed nanodots to create a new
electronic memory technology that can write and erase data
10-100 times faster than today's mainstream charge-storage
memory products. The new system uses a layer of non-conducting
material embedded with discrete (non-overlapping) silicon
nanodots, each approximately 3 nanometers across. Each nanodot
functions as a single memory bit. To control the memory
operation, this layer is then covered with a thin metallic
layer, which functions as a "metal gate." The metal gate
controls the "on" and "off" states of the transistor. The
results are published in the American Institute of Physics'
(AIP) journal Applied Physics Letters. "The metal-gate structure
is a mainstream technology on the path toward nanoscale
complementary metal-oxide-semiconductor (CMOS) memory technology