Current perpendicular to plane magnetoresistive sensor with
reduced read A magnetoresistive sensor having a greatly reduced
read gap. The sensor has a pinned layer structure formed above
the free layer. A layer of antiferromagnetic material (AFM
layer) is formed over the pinned layer structure and has a front
edge disposed toward, but recessed from the air bearing surface.
An electrically conductive, magnetic lead is formed over the
pinned layer and AFM layer such that the lead fills a space
between the AFM layer and the air bearing surface. In this way,
the read gap is distance between the outermost portion of the
pinned layer structure and free layer. The thickness of the AFM
layer and capping layer are not included in the read gap. Gill;
Hardayal Singh (Palo Alto, CA), Jayasekara; Wipul Pemsiri (Los
Gatos, CA) | Hitachi Global Storage Technologies Netherlands
B.V. September 27, 2007|