Mar 29th, 2011 Powdec announces breakthrough Gallium Nitride
transistor design Dramatically reduces power losses, increases
break-down voltage, eliminates current collapse. Fig 1-1:
Conventional HFET structure. Powdec K.K. announced that,
together with Sheffield University, they have succeeded in
developing breakthrough high voltage Gallium Nitride (GaN) power
transistors. This was realized by creating semiconductor hetero-
junction structures based on novel principles, which solve the
problems of conventional transistors and dramatically improve
the transistor performance. In the transistors, current collapse
is almost completely eliminated, power losses are reduced and
high break-down voltages of more than 1,100 Volts (V) are
realized. These new GaN transistors are suited to be used in a
broad range of equipment from inverters in consumer appliances
to server power supplies, electric vehicles and industrial
motors to lower power use. Fig 1-2: Powdec’s breakthrough HFET
structure. Gallium Nitride is a next ge