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link:http://dx.doi.org/+10.1063/1.122477 We fabricated field-
effect transistors based on individual single- and multi-wall
carbon nanotubes and analyzed their performance. Transport
through the nanotubes is dominated by holes and, at room
temperature, it appears to be diffusive rather than ballistic.
By varying the gate voltage, we successfully modulated the
conductance of a single-wall device by more than 5 orders of
magnitude. Multi-wall nanotubes show typically no gate effect,
but structural deformations—in our case a collapsed tube—can
make them operate as field-effect transistors. © 1998 American
Institute of Physics.