please explain me -- width of depletion layer varies i need to
know how does width of depletion layer varies with various
factors and i have mentioned all my queries below 1.first of all
i want to know how does width of depletion layer increases with
decrease in doping content??as per my knowledge when p and n
regions r combined to form a junction electrons from n region
and holes from p region move to p and n regions respectively
leaving behind immobile charges and from this we can conclude
that as the doping content increases width should decrease but
opposite of this actually happens.why and how??? 2.when we
increase the potential drop in case of reverse bias, width of
depletion layer increases but in case of thyristor when it is in
forward blocking state and we increase the voltage the width of
j2 junction which is reversed biased decreases thats what given
in md singh and khanchandani. how does all this happen..please
someone explain this ...